WO2021218967A1 - Device structure and manufacturing method therefor, and filter and electronic device - Google Patents

Device structure and manufacturing method therefor, and filter and electronic device Download PDF

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Publication number
WO2021218967A1
WO2021218967A1 PCT/CN2021/090264 CN2021090264W WO2021218967A1 WO 2021218967 A1 WO2021218967 A1 WO 2021218967A1 CN 2021090264 W CN2021090264 W CN 2021090264W WO 2021218967 A1 WO2021218967 A1 WO 2021218967A1
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WIPO (PCT)
Prior art keywords
substrate
sealing layer
conductive
annular groove
layer
Prior art date
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PCT/CN2021/090264
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French (fr)
Chinese (zh)
Inventor
张全德
庞慰
陈士强
Original Assignee
诺思(天津)微***有限责任公司
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Publication of WO2021218967A1 publication Critical patent/WO2021218967A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
    • B81B7/0048—Packages or encapsulation for reducing stress inside of the package structure between the MEMS die and the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors

Definitions

  • the embodiments of the present disclosure relate to the semiconductor field, and in particular to a device structure and a device packaging method, a filter with the device structure, and an electronic device with the filter or the device structure.
  • MEMS Micro-Electro-Mechanical System
  • FBAR Film Bulk Acoustic Resonator
  • the existing acoustic device packaging structure uses a sealing ring to assemble the cover layer (package base) and the substrate (device base) together to form an internal cavity or packaging space, and the internal cavity provides assistance to the performance improvement and reliability of the device.
  • the existing sealing ring will form a cavity in the material interface of the sealing ring or inside the sealing ring when the process fluctuates, resulting in sealing failure.
  • the packaging structure 100 of the existing acoustic device is shown in FIG. 1.
  • the substrate 1, the cover layer 4, the first sealing ring material 2 and the second sealing ring material 3 surround an internal cavity 6, and the acoustic device 5 is fabricated on the main surface of the substrate 1 or the cover layer 4 and is located in the internal cavity 6. .
  • a cavity 7 at the interface between the first sealing ring material 2 and the second sealing ring material 3 will appear.
  • the first sealing ring material or the second sealing ring material may also have cavities, defects, etc., and these cavities/defects will develop and become larger during long-term use. The existence of the above-mentioned voids/defects significantly reduces the quality of the seal ring, which may cause seal failure.
  • Figure 2 is a scanning electron micrograph of the cross-section of the package structure with poor sealing effect. It can be seen that a large number of voids (indicated by the arrow) appear at the interface of the two materials of the sealing ring, and a through channel is formed. Therefore, the sealing fails and cannot isolate environmental water vapor The role of.
  • a device structure including:
  • the first substrate and the second substrate are arranged opposite to each other and spaced apart;
  • the packaging layer is disposed between the opposed first substrate and the second substrate to define a packaging space between the first substrate and the second substrate, and the packaging space has a packaging height;
  • the MEMS device is arranged on the first substrate and/or the second substrate and is located in the packaging space,
  • the packaging layer includes an inner sealing layer and an outer sealing layer.
  • An annular groove between the first substrate and the second substrate is provided on the outer side of the inner sealing layer.
  • the annular groove is open to the outside, and the outer sealing layer is A metal layer covering the entire outer side of the inner sealing layer, and the distance between the opening side of the annular groove in the thickness direction is not less than the package height;
  • the outer sealing layer includes only the inner groove part located in the annular groove, or the outer sealing layer includes the inner groove part located in the annular groove and covering only the side surface of the first substrate and/or the second substrate A part of the side part, the first substrate or the second substrate is provided with a conductive part electrically connected to the inner part of the groove.
  • the embodiment of the present disclosure also relates to a method of manufacturing a device structure, including the steps:
  • a first substrate and a second substrate are provided, the opposite sides of the two substrates are provided with packaging materials, at least one substrate is provided with a conductive part, and the first substrate and/or the second substrate are provided with MEMS devices;
  • the first substrate is opposed to the second substrate, and the corresponding packaging material forms an inner sealing layer.
  • the inner sealing layer defines a packaging space with the first substrate and the second substrate.
  • the MEMS device is located in the packaging space.
  • the outer side of the inner sealing layer is provided with an annular groove between the two bases, the annular groove is open to the outside, and the conductive portion has a conductive path leading to the annular groove;
  • the conductive part is energized, and an outer sealing layer is formed by an electroplating process.
  • the outer sealing layer includes only the inner groove portion located in the annular groove, or the outer sealing layer includes the inner groove portion located in the annular groove And the side surface part covering only a part of the side surface of the first substrate and/or the second substrate.
  • the embodiment of the present disclosure also relates to a filter including at least one of the above-mentioned device structures.
  • the embodiment of the present disclosure also relates to an electronic device including the above-mentioned filter or device structure.
  • FIG. 1 is a schematic cross-sectional view of a packaging structure of a known acoustic device, and the right side in FIG. 1 is an enlarged schematic view of the circled part in the left part in FIG. 1;
  • Figure 2 is an enlarged schematic diagram of the sealed part of the poorly sealed product
  • FIG. 3 is a schematic cross-sectional view of a packaging structure of a MEMS device according to an exemplary embodiment of the present disclosure
  • FIG. 4 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure
  • FIG. 5 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure
  • FIG. 6 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 7 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 8 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 9 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 10 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 11 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 12 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • FIG. 13 is a flowchart exemplarily showing the packaging of a MEMS device according to an exemplary embodiment of the present disclosure
  • FIGS. 14-23 are process diagrams exemplarily showing a process of packaging a MEMS device according to an exemplary embodiment of the present disclosure.
  • the packaging structure of the MEMS device according to the present disclosure will be exemplarily described below with reference to FIGS. 3-12.
  • Device substrate optional materials are monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
  • the device substrate may be provided with acoustic devices and conductive through holes 11 (not shown in some drawings).
  • the first sealing ring material or the first sealing ring includes at least one layer of material.
  • the material is not limited to conductive metals (such as gold, copper, aluminum, etc.), but can also include other non-conductive materials (resin, plastic, etc.).
  • the second sealing ring material or the second sealing ring includes at least one layer of material.
  • the material is not limited to conductive metals (such as gold, copper, aluminum, etc.), but can also include other non-conductive materials (resin, plastic, etc.).
  • the combination or coverage of the first sealing ring material and the second sealing ring material should be good, and the two materials can be the same or different.
  • the first sealing ring material and the second sealing ring material together form an inner sealing ring or an inner sealing layer.
  • Cover layer or packaging substrate optional materials are monocrystalline silicon, gallium arsenide, sapphire, quartz, etc., on which acoustic devices (not shown) can be fabricated, and the packaging substrate can be provided with conductive vias (not shown) ).
  • Acoustic devices which can be SAW (surface acoustic wave) or BAW (bulk wave) acoustic devices, which can be resonators, filters, duplexers, multiplexers, etc., acoustic devices can include bulk wave resonance Or surface acoustic wave resonator.
  • SAW surface acoustic wave
  • BAW bulk wave
  • acoustic devices can include bulk wave resonance Or surface acoustic wave resonator.
  • the internal cavity is surrounded by the substrate 1, the cover layer 4, the first sealing ring material 2 and the second sealing ring material 3, which forms a packaging space.
  • the outer sealing ring or outer sealing layer can be realized by electroplating process, which can be single layer or multiple layers, and the outer sealing ring covers the outside of the entire inner sealing ring. It is required to be dense and tightly integrated with the surrounding materials without gaps.
  • the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • the outer edge of the device substrate 1 or the package substrate 4 is formed when multiple devices are manufactured at the same time, and when a single device is diced and separated.
  • h1 The distance from the device substrate 1 to the package substrate 4, that is, the height of the internal cavity 6, and also the thickness of the material of the first sealing ring and the second sealing ring (the first sealing ring and the second sealing ring are superimposed in the thickness direction) ).
  • annular groove G Annular groove, the outer side of the inner sealing ring is located between the device substrate 1 and the package substrate 4.
  • the annular groove G is open to the outside.
  • h2 The distance at which the annular groove G opens on the outside.
  • Electroplating seed layer the material can be copper, aluminum, gold, silver, etc. or their alloys.
  • Electroplating seed layer the material can be copper, aluminum, gold, silver, etc. or their alloys.
  • the optional materials are metal materials, such as molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • Conductive pad the material of which can be selected from commonly used bonding material systems, such as copper, aluminum, gold, silver, etc., and composite materials or alloy materials of these metals.
  • the substrate the material of which can be FR-4, LTCC, HTCC, etc., which can include more than two conductive layers, and a dielectric layer between the two conductive layers.
  • Conductive lead the material can be copper, aluminum, gold, silver, etc. or their alloys.
  • Primer is an insulating material, which can be plastic or epoxy.
  • Packaging materials ceramics, plastics, epoxy resins, etc. can be selected, or a combination thereof.
  • the material can be copper, aluminum, gold, silver, etc. or their alloys.
  • FIG. 3 is a schematic cross-sectional view of the packaging structure of a MEMS device according to an exemplary embodiment of the present disclosure.
  • the difference from FIG. 1 is that a layer of outer sealing ring 8 is plated around the sealing ring shown in FIG.
  • the ring 8 can be one layer or multiple layers.
  • the thickness d of the outer sealing ring 8 can be varied within a relatively large range, that is, inside or outside the outer edge 9 of the substrate 1 or the cover layer 4.
  • the electrode of the electroplated outer sealing ring 8 needs to be electrically connected to a certain conductive part of the device, which is not shown in FIG. 3.
  • the distance h2 in the thickness direction of the opening side of the annular groove G is equal to the package height h1.
  • the outer sealing ring only includes the inner part of the annular groove G and does not fill the entire annular groove.
  • the part of the outer seal ring located in the annular groove can fill the entire annular groove G without contact with the side surface of the base or without wall climbing.
  • the outer sealing ring only includes the part in the groove located in the annular groove G includes the case where the outer sealing ring is only located in the annular groove (including partial filling and complete filling), and also includes the outer sealing layer
  • the outer sealing ring may also include an inner groove part located in the annular groove G and a side surface part covering only (and wall climbing phenomenon) a part of the side surface of the device substrate and/or the package substrate, as mentioned later Figure 12 shows.
  • the conductive through holes provided on the device substrate or the package substrate are used as conductive portions and are electrically connected to the groove inner part of the outer seal ring.
  • FIG. 4 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure.
  • the difference between Fig. 4 and Fig. 3 is that the package substrate 4 is etched, so that the distance h2 in the thickness direction between the package substrate 4 and the device substrate 1 outside the original seal ring (that is, the distance between the annular groove opening on the outside) ) Increases, as shown in Figure 4, h2 is greater than h1.
  • h1 in FIG. 3 is small, due to the dicing process, the gap between the device substrate 1 and the package substrate 4 may be blocked by residues, and the electroplated metal cannot be filled normally.
  • increasing the distance h2 of the outer opening of the annular groove, combined with the residue removal process with an etching solution mentioned later, is beneficial to prevent or reduce the gap between the device substrate 1 and the package substrate 4 Blocked by residue.
  • FIG. 5 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure.
  • the embodiment shown in FIG. 5 is different from FIG. 4 in that the device substrate 1 is also etched, so that outside the original sealing ring, the distance h2 of the outer opening of the annular groove is increased, that is, h2 is greater than h1.
  • the distance h2 of the outer opening of the annular groove is further increased, combined with the process of removing residue with an etching solution mentioned later, which is beneficial to prevent or reduce the gap between the device substrate 1 and the package substrate 4 The gap is blocked by debris.
  • FIG. 6 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • the difference between FIG. 6 and FIG. 5 is that, in FIG. 6, the etched parts of the device substrate 1 and the package substrate 4 are bevels, which improves the coverage and bonding area of the electroplating layer, which is beneficial to improve the outer sealing ring 8 and The bonding quality between the device substrate 1 and the package substrate 4.
  • FIG. 7 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • the difference between FIG. 7 and FIG. 6 is that the etched parts of the device substrate 1 and the package substrate 4 are multi-slope steps, which can also improve the coverage and bonding area of the electroplating layer, which is beneficial to improve the outer sealing ring 8 and The bonding quality between the device substrate 1 and the package substrate 4.
  • the present disclosure does not limit the shapes of the etched parts of the device substrate 1 and the package substrate 4, as long as h2 is greater than h1, which is beneficial to maximize the plating metal coverage and bonding ability.
  • FIG. 8 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • the embodiment shown in FIG. 8 is different from that in FIG. 7 in that the second sealing ring material 3 on the packaging substrate 4 is an insulating material.
  • an electroplating seed layer 10 needs to be formed on the etching step of the packaging substrate 4. If the seed layer 10 is not electroplated, when the outer sealing ring 8 is electroplated, a cavity may appear between the package substrate 4 and the outer sealing ring 8 to cause sealing failure.
  • the first sealing ring material 2 on the device substrate 1 is a metal material, but an electroplating seed layer 2'is also formed on the substrate etching step as an extension of the first sealing ring material 2.
  • FIG. 8 makes full use of the ductility of insulating materials such as resins, and reduces the demanding requirements for sealing ring materials and processes.
  • the plating seed layer 2' may not be provided. In addition, when the plating seed layer 2'is provided, the plating seed layer 2'may not be in contact with the first ring sealing material 2.
  • the electroplating seed layer 10 may not be provided. In this case, when the electroplating time is long, the filled electroplating metal can fill the annular groove.
  • FIG. 9 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • the embodiment shown in FIG. 9 is different from that in FIG. 8 in that the second sealing ring material 3 on the packaging substrate 4 is an insulating material, which is not stacked with the first sealing ring material 2 on the device substrate 1, but Placed horizontally, and their heights are different, the height difference between the two is h3, and the size of h3 may also be 0, but it should not be very large, generally in the range of 0-10 ⁇ m, so as to avoid the need for a long time for electroplating metal filling.
  • the function of the second sealing ring material 3 is to initially seal the internal cavity 6, and the gap between the plating seed layer 10 on the package substrate 4 and the second sealing ring material 3 can be completely filled by electroplating.
  • the embodiment shown in FIG. 9 is also to maximize the ductility of insulating materials such as resin, and reduce the demanding requirements for sealing ring materials and processes.
  • FIG. 10 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • 10 is based on, for example, the structure shown in FIG. 8, showing the substrate 14 electrically connected to the device base 1.
  • Conductive leads 15 are provided in the substrate 14, and the conductive pad 12 on the lower side of the device base 1 is soldered.
  • the ball 13 is electrically connected to the conductive lead 15.
  • the primer 16 is filled between the device base 1 and the substrate 14.
  • Figure 10 shows the electroplated electrical connection lines, that is, from the conductive lead 15, to the solder ball 13, to the conductive pad 12, to the conductive via 11, to the wire 18, to the first sealing ring material made of conductive material 2.
  • the conductive through hole 11 electrically connected to the first sealing ring material 2 is arranged inside the annular groove or in the inner cavity 6.
  • the conductive via 11 also includes remaining conductive vias that are electrically connected to the device but not to the sealing ring.
  • FIG. 11 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • the difference between the embodiment shown in FIG. 11 and the structure shown in FIG. 10 is that, in FIG. 11, the conductive via 11 electrically connected to the first sealing ring material 2 is provided within the width of the annular groove.
  • FIG. 12 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure.
  • the difference between the embodiment shown in FIG. 12 and the structure shown in FIG. 10 is that, in FIG. 12, the conductive through hole 11 electrically connected to the first sealing ring material 2 is provided on the outer edge of the annular groove, that is, the conductive through hole 11 is located at the outer edge of the annular groove.
  • Figure 12 shows the exposed half-hole state.
  • the number of conductive through holes that are electrically connected to the sealing ring is not limited to one, but may also be multiple, and may be a combination of the above-mentioned multiple conductive through holes.
  • Figures 3-12 only show the case where the two sealing rings on the inner side are placed side by side and stacked in the thickness direction, but the present disclosure is not limited to this.
  • the inner sealing ring is provided
  • the structure of may also be a combination of vertical stacking and horizontal juxtaposition, and these are all within the protection scope of the present disclosure.
  • the groove wall of the annular groove when there are steps on the groove wall of the annular groove, it can be a sloped step, a vertical step, or a combination of a step and a slope. These are all within the scope of protection of the present disclosure.
  • the acoustic component is assembled on the substrate 14 in a flip-chip manner, but the present disclosure is not limited to this, and the acoustic component may also adopt a wire bonding method. ) Or assembled on the substrate 14 through bonding wires, all of which fall within the protection scope of the present disclosure.
  • the sealing ring when the first sealing ring and the second sealing ring of the two bases are opposed to each other (see Figures 3-8, etc.), (1) If the two sealing rings are both non- Conductive material, the wall of the annular groove on the side of the substrate where at least one sealing ring is located needs to be provided with an electroplating seed layer, and the electroplating lead (including conductive vias, etc.) needs to be electrically connected to one of the electroplating seed layers; (2) If One sealing ring is made of non-conductive material, and the other sealing ring is made of conductive material.
  • the wall of the annular groove on one side of the non-conductive sealing ring may or may not be provided with an electroplating seed layer (in the case of installation, in a further embodiment, The electroplating seed layer is also connected to the non-conductive sealing ring), and the wall of the annular groove on the side of the conductive sealing ring does not necessarily need to be provided with a corresponding plating seed layer.
  • the electroplating lead can be electrically connected to the conductive sealing layer and/or can be It is electrically connected to the set electroplating seed layer.
  • the electrical connection can also be connected to the conductive sealing layer via the electroplating seed layer; (3) In the case where both sealing layers are conductive sealing layers, both can be Without the electroplating seed layer, the electroplating lead can be electrically connected to only one conductive sealing layer, and when the electroplating seed layer is provided, it can be electrically connected to the corresponding electroplating seed layer.
  • the plating seed layer may not be provided, and in the case where there is a distance between the outer sealing ring and a substrate such as a packaging substrate, a plating seed layer may be provided on the corresponding wall of the annular groove (such as the upper wall in the figure) (in an optional embodiment, it may not be provided), Furthermore, in the case of installation, the electroplating seed layer is connected to the inner sealing ring via the gap, and the other wall of the annular groove (for example, the lower wall in the figure) is optionally provided with an electroplating seed layer.
  • the plating lead when the plating seed layer is not provided, the plating lead is connected to the conductive sealing ring (the conductive sealing ring defines the inner side wall of the annular groove); when the plating seed layer is provided, the plating lead is connected to Either the seed layer of electroplating and the conductive sealing ring are sufficient.
  • FIG. 13 is a flowchart exemplarily showing the packaging of a MEMS device according to an exemplary embodiment of the present disclosure
  • FIGS. 14-23 are process diagrams exemplarily showing the process of packaging a MEMS device according to an exemplary embodiment of the present disclosure .
  • FIG. 13 shows the processing steps.
  • the basic steps are similar to conventional device fabrication, except for step 907 device assembly and residue removal and step 909 electroplating, where residue removal is an optional process.
  • the filling of primer in step 908 is also an optional process, and the sequence of the electroplating process with step 909 is changed.
  • the conductive through holes used to electrically connect the acoustic device and the outer sealing ring may be provided in the device substrate or the packaging substrate, and different lead-out methods should be included in the present disclosure.
  • step 901 substrate fabrication ie, device base fabrication. As shown in FIG. 14, the acoustic device 5 and the first sealing ring material 2 have been fabricated on the device substrate 1, and the blind hole 11 has also been fabricated On the device substrate 1.
  • FIG. 15 is an embodiment of step 902 of manufacturing the cap layer (ie, manufacturing of the package substrate). As shown in FIG. 15, the second sealing ring material 3 and the electroplating seed layer 10 have been manufactured on the package substrate 4.
  • Figure 16 is an embodiment of step 903 wafer bonding (ie, two substrates are bonded oppositely).
  • the package substrate 4 is aligned upside down on the device substrate 1, and the first sealing ring material is aligned with the second sealing ring material.
  • Form a sealing ring or sealing layer As shown in Fig. 16, an internal cavity or packaging space 6 is formed.
  • FIG. 17 is an embodiment of wafer thinning and pad fabrication in step 904.
  • the thinning is achieved by CMP (Chemical Mechanical Polishing Process), and the blind holes are exposed through CMP to form conductive vias 11 and electrically connected with conductive pads 12.
  • CMP Chemical Mechanical Polishing Process
  • Figure 18 is an embodiment of step 905 dicing, in which bare devices are separated.
  • FIG. 19 is an embodiment in which step 907 is device assembly and residue removal.
  • step 907 a plurality of bare devices in FIG. 18 are assembled on the substrate 14 using solder balls 13.
  • the electroplating seed layer for the outer seal ring is connected together by the through hole 11, the conductive pad 12 of the device base 1, the solder ball 13, and the conductive lead 15 in the substrate 14, so that it passes on the conductive lead 15 of the substrate 14
  • the directional electroplating operation of the outer sealing ring can be realized after power-on.
  • FIG. 20 is an example of filling primer in step 908.
  • the surface of the substrate 14 and the solder balls 13 are protected by the primer filling 16 to avoid being corroded by electroplating or electroplating solution. Since this process step is optional, if there is no such process step or the process step and the electroplating 909 step are sequentially exchanged, the surface pads of the substrate 14, the solder balls 13, and the conductive pads 12 on the lower surface of the device substrate 1 may be changed. Conduct electroplating.
  • Figure 21 is an embodiment of electroplating in step 909.
  • the outer sealing ring 8 is electroplated. By controlling the plating time, the filling amount of the outer sealing ring 8 can be controlled, which may extend beyond the dicing edge of the substrate. Figure 21 shows that it is not extended. Case.
  • FIG. 22 is an example of plastic packaging in step 910, in which the entire device is protected by the packaging material 17.
  • FIG. 23 is an example of separating a single device in step 911.
  • step 911 a single device is separated from the entire substrate to form the structure shown in FIG. 23.
  • one or more layers of metal can be electroplated and filled on the outer periphery of the seal ring of the existing structure, which can strengthen the existing seal ring, and can obtain the advantages of metal replacement of plastic packaging materials. Advantages in heat dissipation and power capacity improvement.
  • each numerical range in addition to expressly indicating that it does not include an endpoint value, can be an endpoint value or the median value of each numerical range, and these are all within the protection scope of the present disclosure. .
  • the structural device using the above-mentioned packaging structure can be used for filters, and can also be used for electronic devices containing various electronic devices, such as filters, duplexers, multiplexers, and the like.
  • the electronic equipment here may also include, but are not limited to, intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.
  • a device structure including:
  • the first substrate and the second substrate are arranged opposite to each other and spaced apart;
  • the packaging layer is disposed between the opposed first substrate and the second substrate to define a packaging space between the first substrate and the second substrate, and the packaging space has a packaging height;
  • the MEMS device is arranged on the first substrate and/or the second substrate and is located in the packaging space,
  • the packaging layer includes an inner sealing layer and an outer sealing layer.
  • An annular groove between the first substrate and the second substrate is provided on the outer side of the inner sealing layer.
  • the annular groove is open to the outside, and the outer sealing layer is A metal layer covering the entire outer side of the inner sealing layer, and the distance between the opening side of the annular groove in the thickness direction is not less than the package height;
  • the outer sealing layer only includes the inner groove part located in the annular groove, or the outer sealing layer includes the inner groove part located in the annular groove and covering only the side surface of the first substrate and/or the second substrate A part of the side part, the first substrate or the second substrate is provided with a conductive part electrically connected to the inner part of the groove, and the inner part of the groove covers the entire outer side of the inner sealing layer.
  • the distance of the opening side of the annular groove in the thickness direction is greater than the package height.
  • the annular groove is a flared annular groove from the outer side of the inner sealing layer toward the outer boundary of the first base and the second base, and at least one side of the annular groove in the thickness direction is set as a slope or a step Incline.
  • the MEMS device includes a bulk acoustic wave resonator.
  • the distance of the opening side of the annular groove in the thickness direction is in the range of 2-200 ⁇ m, and the package height is in the range of 1-50 ⁇ m.
  • the conductive portion includes a conductive through hole provided in the corresponding substrate; or
  • the conductive part includes a conductive lead exposed on the side surface of the substrate where it is located, and the outer sealing layer includes an outer part covering the conductive lead.
  • the conductive through holes are arranged on the outside of the inner sealing layer to be electrically connected to the groove inner part of the outer sealing layer;
  • the conductive through hole is provided on the inner side of the inner sealing layer, the inner sealing layer has a conductive part that defines the inner boundary of the annular groove and is electrically connected to the inner part of the groove, and the conductive through hole is sealed with the inner part.
  • the conductive parts of the layer are electrically connected; or
  • the position of the conductive through hole overlaps the inner sealing layer in the thickness direction of the device structure, and the inner sealing layer has a conductive part that defines the inner boundary of the annular groove and is electrically connected to the inner part of the groove,
  • the conductive via is electrically connected to the conductive portion of the inner sealing layer.
  • the conductive part is electrically connected to the corresponding electroplating seed layer;
  • the inner sealing layer includes a conductive sealing portion defining an inner side wall of the annular groove, and the conductive portion is electrically connected to the conductive sealing portion; and/or
  • the inner sealing layer includes a conductive sealing portion that defines the inner side wall of the annular groove, the conductive portion is electrically connected to an electroplating seed layer, and the electroplating seed layer electrically connected to the conductive portion is connected to a corresponding conductive sealing portion, or Not connected.
  • the inner sealing layer includes a first sealing layer disposed on the first substrate and extending from the first substrate toward the second substrate, and a second sealing layer disposed on the second substrate and extending from the second substrate toward the first substrate.
  • the layer and the second sealing layer are opposed to each other.
  • At least one of the first sealing layer and the second sealing layer is a non-conductive sealing layer
  • the groove wall of the annular groove defined by the base corresponding to the non-conductive sealing layer is provided with an electroplating seed layer, and the electroplating seed layer is connected to the non-conductive sealing layer or partially covered by the non-conductive sealing layer.
  • the inner sealing layer includes an inner sealing layer and an outer sealing layer that are juxtaposed and arranged in a transverse direction.
  • Both the inner sealing layer and the outer sealing layer are non-conductive sealing layers
  • the groove wall of the annular groove defined by the first substrate is provided with a first electroplating seed layer, and/or the groove wall of the annular groove defined by the second substrate is provided with a second electroplating seed layer;
  • the electroplating seed layer is connected to the outer sealing layer or partially covered by the outer sealing layer.
  • the inner sealing layer is a non-conductive sealing layer
  • the outer sealing layer is a conductive sealing layer, and there is a gap between the outer sealing layer and the substrate on one side;
  • the groove wall defined by the corresponding base on the side of the annular groove where the gap is located is provided with an electroplating seed layer, which passes through the gap and is connected to the inner sealing layer or is partially covered by the inner sealing layer.
  • the height of the gap in the thickness direction of the device structure is not greater than 10 ⁇ m.
  • the inner sealing layer includes a conductive sealing portion defining an inner side wall of the annular groove, and the conductive sealing portion is electrically connected with the conductive portion.
  • a package substrate, a substrate lead is arranged in the package substrate, and the conductive part of the device structure is electrically connected to a corresponding substrate lead.
  • the first base or the second base and the packaging substrate are electrically connected with solder balls;
  • the device structure further includes an insulating layer filling a gap between the first base or the second base and the packaging substrate.
  • a manufacturing method of a device structure including the steps:
  • a first substrate and a second substrate are provided, the opposite sides of the two substrates are provided with packaging materials, at least one substrate is provided with a conductive part, and the first substrate and/or the second substrate are provided with MEMS devices;
  • the first substrate is opposed to the second substrate, and the corresponding packaging material forms an inner sealing layer.
  • the inner sealing layer defines a packaging space with the first substrate and the second substrate.
  • the MEMS device is located in the packaging space.
  • the outer side of the inner sealing layer is provided with an annular groove between the two bases, the annular groove is open to the outside, and the conductive portion has a conductive path leading to the annular groove;
  • the conductive part is energized, and an outer sealing layer is formed by an electroplating process.
  • the outer sealing layer includes only the inner groove portion located in the annular groove, or the outer sealing layer includes the inner groove portion located in the annular groove And the side surface part covering only a part of the side surface of the first substrate and/or the second substrate.
  • an electroplating seed layer is provided on the portion of the first substrate and/or the second substrate that defines the annular groove.
  • the method further includes the steps:
  • the package substrate is provided with substrate leads;
  • the step of energizing the conductive part includes energizing the corresponding substrate lead.
  • the method further includes the step of removing the residue in the annular groove.
  • a filter comprising: at least one device structure according to any one of 1-18.
  • An electronic device comprising the filter according to 23 or the device structure according to any one of 1-18.

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Abstract

A device structure, comprising: a first substrate (1) and a second substrate (4); an encapsulation layer provided between the opposing first and second substrates (1, 4) to define an encapsulation space therebetween; and an MEMS device provided on the first substrate (1) and/or the second substrate (4) and located in the encapsulation space, wherein the encapsulation layer comprises inner sealing layers (2, 3) and an outer sealing layer (8), an annular groove (G) is formed outside of the inner sealing layers (2, 3) and located between the first substrate (1) and the second substrate (4), the annular groove (G) opens outwards, and the outer sealing layer (8) is a metal layer and covers the whole outer sides of the inner sealing layers (2, 3); and the first substrate (1) or the second substrate (4) is provided with a conductive part electrically connected to an in-groove part of the annular groove (G). The device structure reinforces the existing seal ring structure and improves the heat dissipation capacity and power capacity. Also provided is a device structure manufacturing method, a filter and an electronic device.

Description

器件结构及其制造方法、滤波器、电子设备Device structure and manufacturing method thereof, filter, and electronic equipment 技术领域Technical field
本公开的实施例涉及半导体领域，尤其涉及一种器件结构及一种器件封装方法，一种具有该器件结构的滤波器，以及一种具有该滤波器或器件结构的电子设备。The embodiments of the present disclosure relate to the semiconductor field, and in particular to a device structure and a device packaging method, a filter with the device structure, and an electronic device with the filter or the device structure.
背景技术Background technique
现有的声学器件多为微机电***(MEMS,Micro-Electro-Mechanical System)器件，例如包括薄膜体声波谐振器(FBAR，Film Bulk Acoustic Resonator)。现有的声学器件封装结构利用密封圈将盖层(封装基底)和衬底(器件基底)装配一起，形成内部空腔或封装空间，内部空腔对器件的性能提升和可靠性工作提供帮助。但现有密封圈在工艺波动时会在密封圈材料界面或密封圈内部形成空洞，从而导致密封失效。Most of the existing acoustic devices are Micro-Electro-Mechanical System (MEMS) devices, such as film bulk acoustic resonators (FBAR, Film Bulk Acoustic Resonator). The existing acoustic device packaging structure uses a sealing ring to assemble the cover layer (package base) and the substrate (device base) together to form an internal cavity or packaging space, and the internal cavity provides assistance to the performance improvement and reliability of the device. However, the existing sealing ring will form a cavity in the material interface of the sealing ring or inside the sealing ring when the process fluctuates, resulting in sealing failure.
现有的声学器件的封装结构100如图1所示。衬底1、盖层4、第一密封圈材料2和第二密封圈材料3包围生成内部空腔6，声学器件5制作在衬底1或盖层4的主表面并位于内部空腔6中。当第一密封圈材料2和第二密封圈材料3之间的黏附性及结合性不佳时，将出现位于第一密封圈材料2和第二密封圈材料3的界面上的空洞7。此外，第一密封圈材料或第二密封圈材料内部也可能有空洞、缺陷等，这些空洞/缺陷在长期使用时会发展变大。上述空洞/缺陷的存在显著降低了密封圈的质量，从而可能造成密封失效。The packaging structure 100 of the existing acoustic device is shown in FIG. 1. The substrate 1, the cover layer 4, the first sealing ring material 2 and the second sealing ring material 3 surround an internal cavity 6, and the acoustic device 5 is fabricated on the main surface of the substrate 1 or the cover layer 4 and is located in the internal cavity 6. . When the adhesion and bonding between the first sealing ring material 2 and the second sealing ring material 3 are not good, a cavity 7 at the interface between the first sealing ring material 2 and the second sealing ring material 3 will appear. In addition, the first sealing ring material or the second sealing ring material may also have cavities, defects, etc., and these cavities/defects will develop and become larger during long-term use. The existence of the above-mentioned voids/defects significantly reduces the quality of the seal ring, which may cause seal failure.
图2是实际密封效果不良的封装结构截面的扫描电镜照片，可以看出密封圈两种材料界面出现了大量空洞(箭头所示)，并形成贯穿通道，因此密封失效，起不到隔离环境水汽的作用。Figure 2 is a scanning electron micrograph of the cross-section of the package structure with poor sealing effect. It can be seen that a large number of voids (indicated by the arrow) appear at the interface of the two materials of the sealing ring, and a through channel is formed. Therefore, the sealing fails and cannot isolate environmental water vapor The role of.
另外，由于现有结构中盖层和衬底之间除内部空腔以外的所有空间在封装时被塑封材料所填充或覆盖，因此其散热能力较差。In addition, since all the space between the cover layer and the substrate except the internal cavity in the existing structure is filled or covered by the plastic encapsulation material during packaging, the heat dissipation capability is poor.
发明内容Summary of the invention
为了解决或者缓解现有技术中的技术问题的至少一个方面，例如提高对于MEMS器件的封装效果，提出本公开。In order to solve or alleviate at least one aspect of the technical problems in the prior art, such as improving the packaging effect for MEMS devices, the present disclosure is proposed.
根据本公开的实施例的一个方面，提出了一种器件结构，包括：According to an aspect of the embodiments of the present disclosure, a device structure is proposed, including:
第一基底和第二基底，彼此对置的间隔开布置；The first substrate and the second substrate are arranged opposite to each other and spaced apart;
封装层，设置在对置的第一基底与第二基底之间，以限定在第一基底与第二基底之间的封装空间，封装空间具有封装高度；The packaging layer is disposed between the opposed first substrate and the second substrate to define a packaging space between the first substrate and the second substrate, and the packaging space has a packaging height;
MEMS器件，设置于第一基底和/或第二基底，且位于封装空间之内，The MEMS device is arranged on the first substrate and/or the second substrate and is located in the packaging space,
其中：in:
所述封装层包括内密封层和外密封层，所述内密封层的外侧设置有在第一基底和第二基底之间的环形槽，所述环形槽对外侧开口，所述外密封层为金属层，其覆盖所述内密封层的整个外侧，所述环形槽的开口侧在厚度方向上的距离不小于封装高度；且The packaging layer includes an inner sealing layer and an outer sealing layer. An annular groove between the first substrate and the second substrate is provided on the outer side of the inner sealing layer. The annular groove is open to the outside, and the outer sealing layer is A metal layer covering the entire outer side of the inner sealing layer, and the distance between the opening side of the annular groove in the thickness direction is not less than the package height; and
所述外密封层仅包括位于所述环形槽内的槽内部分，或者所述外密封层包括位于所述环形槽内的槽内部分以及仅仅覆盖第一基底和/或第二基底的侧面的一部分的侧面部分，所述第一基底或第二基底设置有与所述槽内部分电连接的导电部。The outer sealing layer includes only the inner groove part located in the annular groove, or the outer sealing layer includes the inner groove part located in the annular groove and covering only the side surface of the first substrate and/or the second substrate A part of the side part, the first substrate or the second substrate is provided with a conductive part electrically connected to the inner part of the groove.
本公开的实施例还涉及一种器件结构的制造方法，包括步骤：The embodiment of the present disclosure also relates to a method of manufacturing a device structure, including the steps:
提供第一基底和第二基底，两个基底的相对侧设置有封装材料，至少一个基底设置有导电部，第一基底和/或第二基底设置有MEMS器件；A first substrate and a second substrate are provided, the opposite sides of the two substrates are provided with packaging materials, at least one substrate is provided with a conductive part, and the first substrate and/or the second substrate are provided with MEMS devices;
将第一基底与第二基底对置，对应的封装材料形成内密封层，所述内密封层与第一基底以及第二基底限定封装空间，所述MEMS器件位于所述封装空间内，所述内密封层的外侧设置有在两个基底之间的环形槽，所述环形槽对外侧开口，所述导电部具有通到所述环形槽的导电路径；和The first substrate is opposed to the second substrate, and the corresponding packaging material forms an inner sealing layer. The inner sealing layer defines a packaging space with the first substrate and the second substrate. The MEMS device is located in the packaging space. The outer side of the inner sealing layer is provided with an annular groove between the two bases, the annular groove is open to the outside, and the conductive portion has a conductive path leading to the annular groove; and
将所述导电部通电，利用电镀工艺形成外密封层，所述外密封层仅包括位于所述环形槽内的槽内部分，或者所述外密封层包括位于所述环形槽内的槽内部分以及仅仅覆盖第一基底和/或第二基底的侧面的一部分的侧面部分。The conductive part is energized, and an outer sealing layer is formed by an electroplating process. The outer sealing layer includes only the inner groove portion located in the annular groove, or the outer sealing layer includes the inner groove portion located in the annular groove And the side surface part covering only a part of the side surface of the first substrate and/or the second substrate.
本公开的实施例也涉及一种滤波器，包括至少一个上述器件结构。The embodiment of the present disclosure also relates to a filter including at least one of the above-mentioned device structures.
本公开的实施例还涉及一种电子设备，包括上述的滤波器或者器件结构。The embodiment of the present disclosure also relates to an electronic device including the above-mentioned filter or device structure.
附图说明Description of the drawings
以下描述与附图可以更好地帮助理解本公开所公布的各种实施例中 的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：The following description and the accompanying drawings can better help understand these and other features and advantages of the various embodiments disclosed in the present disclosure. The same reference numerals in the figures always indicate the same components, in which:
图1为已知声学器件的封装结构的截面示意图，图1中的右侧为图1中的左侧部分中的圆圈部分的放大示意图；FIG. 1 is a schematic cross-sectional view of a packaging structure of a known acoustic device, and the right side in FIG. 1 is an enlarged schematic view of the circled part in the left part in FIG. 1;
图2为密封不良产品的密封部分的放大示意图；Figure 2 is an enlarged schematic diagram of the sealed part of the poorly sealed product;
图3为根据本公开的一个示例性实施例MEMS器件的封装结构的截面示意图；3 is a schematic cross-sectional view of a packaging structure of a MEMS device according to an exemplary embodiment of the present disclosure;
图4为根据本公开的另一个示例性实施例MEMS器件的封装结构的截面示意图；4 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure;
图5为根据本公开的又一个示例性实施例MEMS器件的封装结构的截面示意图；5 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure;
图6为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图；6 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图7为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图；7 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图8为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图；8 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图9为根据本公开的还一个示例性实施例MEMS器件的封装结构的截面示意图；9 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图10为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图；10 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图11为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图；11 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图12为根据本公开的还一个示例性实施例MEMS器件的封装结构的截面示意图；12 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure;
图13为示例性示出根据本公开的一个示例性实施例的封装MEMS器件的流程图；FIG. 13 is a flowchart exemplarily showing the packaging of a MEMS device according to an exemplary embodiment of the present disclosure;
图14-23为示例性示出根据本公开的一个示例性实施例的封装MEMS 器件的工艺过程图。14-23 are process diagrams exemplarily showing a process of packaging a MEMS device according to an exemplary embodiment of the present disclosure.
具体实施方式Detailed ways
下面通过实施例，并结合附图，对本公开的技术方案作进一步具体的说明。下述参照附图对本公开实施方式的说明旨在对本公开的总体公开构思进行解释，而不应当理解为对本公开的一种限制。In the following, the technical solutions of the present disclosure will be further described in detail through the embodiments and in conjunction with the drawings. The following description of the embodiments of the present disclosure with reference to the accompanying drawings is intended to explain the general disclosure concept of the present disclosure, and should not be construed as a limitation to the present disclosure.
下面参照附图3-12示例性说明根据本公开的MEMS器件的封装结构。The packaging structure of the MEMS device according to the present disclosure will be exemplarily described below with reference to FIGS. 3-12.
在图3-12中，附图标记示例性说明如下：In Figures 3-12, the reference signs are illustratively described as follows:
1：器件基底，可选材料为单晶硅、砷化镓、蓝宝石、石英等，器件基底可以设置有声学器件，设置有导电通孔11(部分附图中未示出)。1: Device substrate, optional materials are monocrystalline silicon, gallium arsenide, sapphire, quartz, etc. The device substrate may be provided with acoustic devices and conductive through holes 11 (not shown in some drawings).
2：第一密封圈材料或第一密封圈，包含至少一层材料，材料不仅限于导电金属(如金，铜，铝等)，还可包含其他非导电材料(树脂，塑料等)。2: The first sealing ring material or the first sealing ring includes at least one layer of material. The material is not limited to conductive metals (such as gold, copper, aluminum, etc.), but can also include other non-conductive materials (resin, plastic, etc.).
3：第二密封圈材料或第二密封圈，包含至少一层材料，材料不仅限于导电金属(如金，铜，铝等)，还可包含其他非导电材料(树脂，塑料等)。第一密封圈材料和第二密封圈材料的结合性或覆盖性要良好，两种材料可以相同也可以不同。第一密封圈材料和第二密封圈材料共同形成内密封圈或内密封层。3: The second sealing ring material or the second sealing ring includes at least one layer of material. The material is not limited to conductive metals (such as gold, copper, aluminum, etc.), but can also include other non-conductive materials (resin, plastic, etc.). The combination or coverage of the first sealing ring material and the second sealing ring material should be good, and the two materials can be the same or different. The first sealing ring material and the second sealing ring material together form an inner sealing ring or an inner sealing layer.
4：盖层或者封装基底，可选材料为单晶硅、砷化镓、蓝宝石、石英等，其上可制作有声学器件(未画出)，封装基底可以设置有导电通孔(未示出)。4: Cover layer or packaging substrate, optional materials are monocrystalline silicon, gallium arsenide, sapphire, quartz, etc., on which acoustic devices (not shown) can be fabricated, and the packaging substrate can be provided with conductive vias (not shown) ).
5：声学器件，可选为SAW(声表面波)型或BAW(体波)型等声学器件，可为谐振器，滤波器，双工器，多工器等，声学器件可以包括体波谐振器或者声表面波谐振器。5: Acoustic devices, which can be SAW (surface acoustic wave) or BAW (bulk wave) acoustic devices, which can be resonators, filters, duplexers, multiplexers, etc., acoustic devices can include bulk wave resonance Or surface acoustic wave resonator.
6：内部空腔，由衬底1，盖层4，第一密封圈材料2和第二密封圈材料3包围而成，其形成封装空间。6: The internal cavity is surrounded by the substrate 1, the cover layer 4, the first sealing ring material 2 and the second sealing ring material 3, which forms a packaging space.
8：外密封圈或外密封层，可由电镀工艺实现，可为单层或多层，外密封圈覆盖住整个内密封圈的外侧。要求致密且与周围材料结合紧密无缝隙，其材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。8: The outer sealing ring or outer sealing layer can be realized by electroplating process, which can be single layer or multiple layers, and the outer sealing ring covers the outside of the entire inner sealing ring. It is required to be dense and tightly integrated with the surrounding materials without gaps. The material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
9：器件基底1或封装基底4的外边缘，在多颗器件同时制作时，划片分离单颗器件时形成。9: The outer edge of the device substrate 1 or the package substrate 4 is formed when multiple devices are manufactured at the same time, and when a single device is diced and separated.
h1:器件基底1到封装基底4的距离，即内部空腔6的高度，也是第一密封圈和第二密封圈材料的厚度和(第一密封圈和第二密封圈在厚度方向上叠置)。h1: The distance from the device substrate 1 to the package substrate 4, that is, the height of the internal cavity 6, and also the thickness of the material of the first sealing ring and the second sealing ring (the first sealing ring and the second sealing ring are superimposed in the thickness direction) ).
G：环形槽，在内密封圈的外侧位于器件基底1和封装基底4之间。环形槽G对外侧开口。G: Annular groove, the outer side of the inner sealing ring is located between the device substrate 1 and the package substrate 4. The annular groove G is open to the outside.
h2：环形槽G在外侧开口的距离。h2: The distance at which the annular groove G opens on the outside.
2’：电镀种子层，其材料可选铜，铝，金，银等或其合金。2': Electroplating seed layer, the material can be copper, aluminum, gold, silver, etc. or their alloys.
10：电镀种子层，其材料可选铜，铝，金，银等或其合金。10: Electroplating seed layer, the material can be copper, aluminum, gold, silver, etc. or their alloys.
11：导电通孔，可选材料为金属材料，如钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。11: Conductive through holes. The optional materials are metal materials, such as molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
12：导电焊盘，其材料可选当前常用的键合材料体系，如铜，铝,金,银等以及这些金属的复合材料或合金材料等。12: Conductive pad, the material of which can be selected from commonly used bonding material systems, such as copper, aluminum, gold, silver, etc., and composite materials or alloy materials of these metals.
13：焊球。13: Solder ball.
14：基板，其材料可选FR-4，LTCC，HTCC等，其可包含两层以上的导电层，以及两层导电层之间的介电层等。14: The substrate, the material of which can be FR-4, LTCC, HTCC, etc., which can include more than two conductive layers, and a dielectric layer between the two conductive layers.
15：导电引线，材料可选铜，铝，金，银等或其合金。15: Conductive lead, the material can be copper, aluminum, gold, silver, etc. or their alloys.
16：底胶，为绝缘材料，可以为塑料或环氧树脂等。16: Primer is an insulating material, which can be plastic or epoxy.
17：封装材料，可选陶瓷，塑料，环氧树脂等，或其组合。17: Packaging materials, ceramics, plastics, epoxy resins, etc. can be selected, or a combination thereof.
18：导线，材料可选铜，铝，金，银等或其合金。18: Wire, the material can be copper, aluminum, gold, silver, etc. or their alloys.
图3为根据本公开的一个示例性实施例的MEMS器件的封装结构的截面示意图，与图1不同之处在于在图1所示的密封圈***还电镀有一层外密封圈8，该外密封圈8可为一层或多层。根据电镀时间的控制，外密封圈8的厚度d可在较大范围内变化，即可在衬底1或者盖层4的外边9的内侧或外侧。电镀的外密封圈8的电极需要与器件的某一导电部电连接，图3未示出。3 is a schematic cross-sectional view of the packaging structure of a MEMS device according to an exemplary embodiment of the present disclosure. The difference from FIG. 1 is that a layer of outer sealing ring 8 is plated around the sealing ring shown in FIG. The ring 8 can be one layer or multiple layers. According to the control of the plating time, the thickness d of the outer sealing ring 8 can be varied within a relatively large range, that is, inside or outside the outer edge 9 of the substrate 1 or the cover layer 4. The electrode of the electroplated outer sealing ring 8 needs to be electrically connected to a certain conductive part of the device, which is not shown in FIG. 3.
在图3中，环形槽G的开口侧在厚度方向上的距离h2等于封装高度 h1。In FIG. 3, the distance h2 in the thickness direction of the opening side of the annular groove G is equal to the package height h1.
如图3所示，外密封圈仅包括位于环形槽G内的槽内部分且并未填充满整个环形槽。不过，本公开不限于此，例如外密封圈的位于环形槽内的部分可以填充整个环形槽G，而没有与基底的侧面有接触或者不存在爬壁现象。在本公开中，“外密封圈仅包括位于环形槽G内的槽内部分”包含了外密封圈仅仅位于环形槽内(包括了部分填充和完全填平)的情形，也包含了外密封层存在从环形槽凸出的部分且该部分没有与基底的侧面有接触或者不存在爬壁现象的情形。在本公开中，外密封圈还可以包括位于环形槽G内的槽内部分以及仅仅覆盖(及存在爬壁现象)器件基底和/或封装基底的侧面的一部分的侧面部分，如后面提及的附图12所示。As shown in Fig. 3, the outer sealing ring only includes the inner part of the annular groove G and does not fill the entire annular groove. However, the present disclosure is not limited to this. For example, the part of the outer seal ring located in the annular groove can fill the entire annular groove G without contact with the side surface of the base or without wall climbing. In the present disclosure, "the outer sealing ring only includes the part in the groove located in the annular groove G" includes the case where the outer sealing ring is only located in the annular groove (including partial filling and complete filling), and also includes the outer sealing layer There are cases where a part protruding from the annular groove is not in contact with the side surface of the base or there is no wall climbing phenomenon. In the present disclosure, the outer sealing ring may also include an inner groove part located in the annular groove G and a side surface part covering only (and wall climbing phenomenon) a part of the side surface of the device substrate and/or the package substrate, as mentioned later Figure 12 shows.
在图3中，虽然没有示出，器件基底或封装基底设置的导电通孔作为导电部，与外密封圈的所述槽内部分电连接。In FIG. 3, although not shown, the conductive through holes provided on the device substrate or the package substrate are used as conductive portions and are electrically connected to the groove inner part of the outer seal ring.
图4为根据本公开的另一个示例性实施例MEMS器件的封装结构的截面示意图。图4与图3不同之处在于在其封装基底4做了刻蚀，这样在原有密封圈外部封装基底4与器件基底1之间在厚度方向上的距离h2(即环形槽在外侧开口的距离)加大，如图4所示，h2大于h1。当图3中h1较小时，由于划片工艺可能导致器件基底1与封装基底4之间的间隙被残渣堵塞，造成电镀金属无法正常填充。图4所示的实施例中，将环形槽的外侧开口的距离h2加大，结合后面提到的用刻蚀液去除残渣工艺，有利于防止或减少器件基底1与封装基底4之间的间隙被残渣堵塞。4 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure. The difference between Fig. 4 and Fig. 3 is that the package substrate 4 is etched, so that the distance h2 in the thickness direction between the package substrate 4 and the device substrate 1 outside the original seal ring (that is, the distance between the annular groove opening on the outside) ) Increases, as shown in Figure 4, h2 is greater than h1. When h1 in FIG. 3 is small, due to the dicing process, the gap between the device substrate 1 and the package substrate 4 may be blocked by residues, and the electroplated metal cannot be filled normally. In the embodiment shown in FIG. 4, increasing the distance h2 of the outer opening of the annular groove, combined with the residue removal process with an etching solution mentioned later, is beneficial to prevent or reduce the gap between the device substrate 1 and the package substrate 4 Blocked by residue.
图5为根据本公开的又一个示例性实施例MEMS器件的封装结构的截面示意图。图5所示的实施例与图4不同之处在于在其器件基底1也做了刻蚀，这样在原有密封圈外部，环形槽在外侧开口的距离h2加大，即h2大于h1。图5所示的实施例中，将环形槽的外侧开口的距离h2进一步加大，结合后面提到的用刻蚀液去除残渣工艺，有利于防止或减少器件基底1与封装基底4之间的间隙被残渣堵塞。FIG. 5 is a schematic cross-sectional view of a packaging structure of a MEMS device according to another exemplary embodiment of the present disclosure. The embodiment shown in FIG. 5 is different from FIG. 4 in that the device substrate 1 is also etched, so that outside the original sealing ring, the distance h2 of the outer opening of the annular groove is increased, that is, h2 is greater than h1. In the embodiment shown in FIG. 5, the distance h2 of the outer opening of the annular groove is further increased, combined with the process of removing residue with an etching solution mentioned later, which is beneficial to prevent or reduce the gap between the device substrate 1 and the package substrate 4 The gap is blocked by debris.
图6为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图。图6与图5不同之处在于，在图6中，在器件基底1和封装基底4的刻蚀部分为斜面，这样提高了电镀层的覆盖性以及结合面积，有利于提高外密封圈8与器件基底1和封装基底4之间的结合质量。FIG. 6 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. The difference between FIG. 6 and FIG. 5 is that, in FIG. 6, the etched parts of the device substrate 1 and the package substrate 4 are bevels, which improves the coverage and bonding area of the electroplating layer, which is beneficial to improve the outer sealing ring 8 and The bonding quality between the device substrate 1 and the package substrate 4.
图7为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图。图7与图6不同之处在于在其器件基底1和封装基底4的刻蚀部分为多斜面台阶形，这样也可以提高了电镀层的覆盖性以及结合面积，有利于提高外密封圈8与器件基底1和封装基底4之间的结合质量。FIG. 7 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. The difference between FIG. 7 and FIG. 6 is that the etched parts of the device substrate 1 and the package substrate 4 are multi-slope steps, which can also improve the coverage and bonding area of the electroplating layer, which is beneficial to improve the outer sealing ring 8 and The bonding quality between the device substrate 1 and the package substrate 4.
需要指出的是，也可以与图6或7不同，仅仅是在一侧的基底上刻蚀出斜面或者台阶面。It should be pointed out that it can also be different from FIG. 6 or 7 in that only a slope or a stepped surface is etched on the substrate on one side.
本公开对于器件基底1和封装基底4的刻蚀部分形状不作限定，只要能满足h2大于h1即可，这有利于电镀金属覆盖和结合能力的最大化。The present disclosure does not limit the shapes of the etched parts of the device substrate 1 and the package substrate 4, as long as h2 is greater than h1, which is beneficial to maximize the plating metal coverage and bonding ability.
图8为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图。图8所示的实施例与图7中不同之处在于在封装基底4上的第二密封圈材料3为绝缘材料，此时需要在封装基底4的刻蚀台阶上制作一电镀种子层10。如果没有电镀种子层10，则电镀外密封圈8时，可能在封装基底4与外密封圈8之间出现空洞造成密封失效。FIG. 8 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. The embodiment shown in FIG. 8 is different from that in FIG. 7 in that the second sealing ring material 3 on the packaging substrate 4 is an insulating material. At this time, an electroplating seed layer 10 needs to be formed on the etching step of the packaging substrate 4. If the seed layer 10 is not electroplated, when the outer sealing ring 8 is electroplated, a cavity may appear between the package substrate 4 and the outer sealing ring 8 to cause sealing failure.
如图8所示，器件基底1上的第一密封圈材料2为金属材料，但在基底刻蚀台阶上也制作一电镀种子层2’作为第一密封圈材料2的延伸。As shown in FIG. 8, the first sealing ring material 2 on the device substrate 1 is a metal material, but an electroplating seed layer 2'is also formed on the substrate etching step as an extension of the first sealing ring material 2.
图8所示的实施例充分利用了绝缘材料如树脂等的延展性，降低了对密封圈材料和工艺的苛刻需求。The embodiment shown in FIG. 8 makes full use of the ductility of insulating materials such as resins, and reduces the demanding requirements for sealing ring materials and processes.
需要指出的是，也可以不设置电镀种子层2’，此外，在设置电镀种子层2’的情况下，电镀种子层2’也可以与第一圈密封材料2不相接。It should be pointed out that the plating seed layer 2'may not be provided. In addition, when the plating seed layer 2'is provided, the plating seed layer 2'may not be in contact with the first ring sealing material 2.
在更进一步的实施例中，也可以不设置电镀种子层10，此时，在电镀时间较长的情况下，填充的电镀金属可以将环形槽填充。In a further embodiment, the electroplating seed layer 10 may not be provided. In this case, when the electroplating time is long, the filled electroplating metal can fill the annular groove.
图9为根据本公开的还一个示例性实施例MEMS器件的封装结构的截面示意图。图9所示实施例与图8中不同之处在于在封装基底4上的第二密封圈材料3为绝缘材料，其与器件基底1上的第一密封圈材料2不是叠层放置，而是水平放置，且其高度不同，两者高度差为h3，h3的大小也可能为0，但不应很大，一般在0-10μm的范围内，以免需要较长时间电镀金属填充。FIG. 9 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. The embodiment shown in FIG. 9 is different from that in FIG. 8 in that the second sealing ring material 3 on the packaging substrate 4 is an insulating material, which is not stacked with the first sealing ring material 2 on the device substrate 1, but Placed horizontally, and their heights are different, the height difference between the two is h3, and the size of h3 may also be 0, but it should not be very large, generally in the range of 0-10μm, so as to avoid the need for a long time for electroplating metal filling.
第二密封圈材料3的作用是为了初步密封内部空腔6，而利用电镀可将封装基底4上的电镀种子层10和第二密封圈材料3之间的空隙完全填 充。图9所示实施例也是为了最大化利用绝缘材料如树脂等的延展性，降低了对密封圈材料和工艺的苛刻需求。The function of the second sealing ring material 3 is to initially seal the internal cavity 6, and the gap between the plating seed layer 10 on the package substrate 4 and the second sealing ring material 3 can be completely filled by electroplating. The embodiment shown in FIG. 9 is also to maximize the ductility of insulating materials such as resin, and reduce the demanding requirements for sealing ring materials and processes.
图10为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图。图10是在例如图8所示的结构的基础上，示出了与器件基底1电连接的基板14，基板14内设置有导电引线15，器件基底1的下侧的导电焊盘12通过焊球13与导电引线15电连接。在图10所示的实施例中，底胶16填充在器件基底1与基板14之间。图10中示出了电镀的电连接线路，即从导电引线15，到焊球13，到导电焊盘12，到导电通孔11，到导线18，到导电材料制成的第一密封圈材料2。在图10中，电连接到第一密封圈材料2的导电通孔11设置在环形槽的内侧或者位于内部空腔6内。导电通孔11还包括与器件起到电连接作用而不与密封圈电连接的其余导电通孔。FIG. 10 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. 10 is based on, for example, the structure shown in FIG. 8, showing the substrate 14 electrically connected to the device base 1. Conductive leads 15 are provided in the substrate 14, and the conductive pad 12 on the lower side of the device base 1 is soldered. The ball 13 is electrically connected to the conductive lead 15. In the embodiment shown in FIG. 10, the primer 16 is filled between the device base 1 and the substrate 14. Figure 10 shows the electroplated electrical connection lines, that is, from the conductive lead 15, to the solder ball 13, to the conductive pad 12, to the conductive via 11, to the wire 18, to the first sealing ring material made of conductive material 2. In FIG. 10, the conductive through hole 11 electrically connected to the first sealing ring material 2 is arranged inside the annular groove or in the inner cavity 6. The conductive via 11 also includes remaining conductive vias that are electrically connected to the device but not to the sealing ring.
图11为根据本公开的再一个示例性实施例MEMS器件的封装结构的截面示意图。图11所示实施例与图10所示的结构的区别在于，在图11中，电连接到第一密封圈材料2的导电通孔11设置在环形槽的宽度范围内。FIG. 11 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. The difference between the embodiment shown in FIG. 11 and the structure shown in FIG. 10 is that, in FIG. 11, the conductive via 11 electrically connected to the first sealing ring material 2 is provided within the width of the annular groove.
图12为根据本公开的还一个示例性实施例MEMS器件的封装结构的截面示意图。图12所示实施例与图10所示的结构的区别在于，在图12中，电连接到第一密封圈材料2的导电通孔11设置在环形槽的外缘，即导电通孔11在图12中为露出的半孔状态。与密封圈电连接的导电通孔的数目并不限于1个，也可以有多个，且可以是上述多种导电通孔情况的组合。FIG. 12 is a schematic cross-sectional view of a packaging structure of a MEMS device according to still another exemplary embodiment of the present disclosure. The difference between the embodiment shown in FIG. 12 and the structure shown in FIG. 10 is that, in FIG. 12, the conductive through hole 11 electrically connected to the first sealing ring material 2 is provided on the outer edge of the annular groove, that is, the conductive through hole 11 is located at the outer edge of the annular groove. Figure 12 shows the exposed half-hole state. The number of conductive through holes that are electrically connected to the sealing ring is not limited to one, but may also be multiple, and may be a combination of the above-mentioned multiple conductive through holes.
图3-12仅仅示出了在内侧的两种密封圈水平并列放置的情况以及在厚度方向上叠置的情形，但是本公开不限于此，如本领域技术人员能够理解的，设置内侧密封圈的结构也可以是纵向叠置与水平并置的结合，这些均在本公开的保护范围之内。Figures 3-12 only show the case where the two sealing rings on the inner side are placed side by side and stacked in the thickness direction, but the present disclosure is not limited to this. As can be understood by those skilled in the art, the inner sealing ring is provided The structure of may also be a combination of vertical stacking and horizontal juxtaposition, and these are all within the protection scope of the present disclosure.
此外，在本公开中，对于环形槽的槽壁，其存在台阶的情况下，可以是斜面台阶，也可以是垂直台阶，还可以是台阶与斜面的组合，这些均在本公开的保护范围之内。In addition, in the present disclosure, when there are steps on the groove wall of the annular groove, it can be a sloped step, a vertical step, or a combination of a step and a slope. These are all within the scope of protection of the present disclosure. Inside.
在图10-12所示的实施例中，声学组件采用倒装(flip-chip)的方 式装配在基板14之上，但是本公开不限于此，声学组件也可以采用打线的方式(wire bonding)或者通过键合线装配在基板14上，这些均在本公开的保护范围之内。In the embodiment shown in FIGS. 10-12, the acoustic component is assembled on the substrate 14 in a flip-chip manner, but the present disclosure is not limited to this, and the acoustic component may also adopt a wire bonding method. ) Or assembled on the substrate 14 through bonding wires, all of which fall within the protection scope of the present disclosure.
在本公开中，对于密封圈，在两个基底的第一密封圈与第二密封圈彼此对置的情况下(参见图3-8等)，(1)若该两个密封圈均为非导电材料，则至少一个密封圈所在的基底那一侧的环形槽的壁需要设置电镀种子层，电镀引线(例如包括导电通孔等)则需要跟其中一个电镀种子层电连接；(2)若一个密封圈为非导电材料，另一个密封圈为导电材料，该非导电密封圈一侧的环形槽的壁可以设置也可以不设置电镀种子层(在设置的情况下，进一步的实施例中，该电镀种子层还与该非导电密封圈相接)，而导电密封圈一侧的环形槽的壁则未必需要设置对应的电镀种子层，电镀引线可以与该导电密封层电连接和/或可以与设置的电镀种子层电连接，该电连接在设置有电镀种子层时还可以经由电镀种子层连接到导电密封层；(3)在两个密封层均为导电密封层的情况下，可以都不设置电镀种子层，电镀引线可以仅与一个导电密封层电连接，在设置了电镀种子层的情况下，可以与对应的电镀种子层电连接。In the present disclosure, for the sealing ring, when the first sealing ring and the second sealing ring of the two bases are opposed to each other (see Figures 3-8, etc.), (1) If the two sealing rings are both non- Conductive material, the wall of the annular groove on the side of the substrate where at least one sealing ring is located needs to be provided with an electroplating seed layer, and the electroplating lead (including conductive vias, etc.) needs to be electrically connected to one of the electroplating seed layers; (2) If One sealing ring is made of non-conductive material, and the other sealing ring is made of conductive material. The wall of the annular groove on one side of the non-conductive sealing ring may or may not be provided with an electroplating seed layer (in the case of installation, in a further embodiment, The electroplating seed layer is also connected to the non-conductive sealing ring), and the wall of the annular groove on the side of the conductive sealing ring does not necessarily need to be provided with a corresponding plating seed layer. The electroplating lead can be electrically connected to the conductive sealing layer and/or can be It is electrically connected to the set electroplating seed layer. When the electroplating seed layer is provided, the electrical connection can also be connected to the conductive sealing layer via the electroplating seed layer; (3) In the case where both sealing layers are conductive sealing layers, both can be Without the electroplating seed layer, the electroplating lead can be electrically connected to only one conductive sealing layer, and when the electroplating seed layer is provided, it can be electrically connected to the corresponding electroplating seed layer.
在本公开中，若是横向方向上并置非导电材料的内侧密封圈以及导电材料的外侧密封圈，则在外侧密封圈连接和密封两个基底表面的情况下，可以不设置电镀种子层，而在外侧密封圈与一个基底例如封装基底存在距离的情况下，可以在在环形槽的对应壁(例如图中上壁)设置电镀种子层(在可选的实施例中，也可以不设置)，更进一步的，在设置的情况下，该电镀种子层经由该缝隙连接到内密封圈，环形槽的另一壁(例如图中下壁)则可选的设置电镀种子层。In the present disclosure, if the inner sealing ring of non-conductive material and the outer sealing ring of conductive material are juxtaposed in the lateral direction, when the outer sealing ring connects and seals the two substrate surfaces, the plating seed layer may not be provided, and In the case where there is a distance between the outer sealing ring and a substrate such as a packaging substrate, a plating seed layer may be provided on the corresponding wall of the annular groove (such as the upper wall in the figure) (in an optional embodiment, it may not be provided), Furthermore, in the case of installation, the electroplating seed layer is connected to the inner sealing ring via the gap, and the other wall of the annular groove (for example, the lower wall in the figure) is optionally provided with an electroplating seed layer.
在本公开中，没有设置电镀种子层的情况下，电镀引线连接到导电的密封圈(该导电的密封圈限定环形槽的内侧壁)；在设置有电镀种子层的情况下，电镀引线连接到电镀种子层和导电的密封圈之一即可。In the present disclosure, when the plating seed layer is not provided, the plating lead is connected to the conductive sealing ring (the conductive sealing ring defines the inner side wall of the annular groove); when the plating seed layer is provided, the plating lead is connected to Either the seed layer of electroplating and the conductive sealing ring are sufficient.
下面参照附图13-23示例性说明封装MEMS器件的方法。图13为示例性示出根据本公开的一个示例性实施例的封装MEMS器件的流程图；图14-23为示例性示出根据本公开的一个示例性实施例的封装MEMS器件的工艺过程图。The method of packaging a MEMS device will be exemplarily described below with reference to FIGS. 13-23. FIG. 13 is a flowchart exemplarily showing the packaging of a MEMS device according to an exemplary embodiment of the present disclosure; FIGS. 14-23 are process diagrams exemplarily showing the process of packaging a MEMS device according to an exemplary embodiment of the present disclosure .
图13示出了加工步骤，基本工步与常规器件制作类似，除了步骤907器件装配与残渣去除和步骤909电镀，其中残渣去除是可选工艺。步骤908填充底胶也为可选工艺，且其与步骤909电镀的工艺顺序是更换的。FIG. 13 shows the processing steps. The basic steps are similar to conventional device fabrication, except for step 907 device assembly and residue removal and step 909 electroplating, where residue removal is an optional process. The filling of primer in step 908 is also an optional process, and the sequence of the electroplating process with step 909 is changed.
下面以图8所示的结构为例，来具体描述本公开的加工步骤。该实施例中，用于与声学器件和外密封圈电连接的导电通孔可以设置在器件基底中，也可以设置在封装基底中，不同的引出方式都应该包含在本公开中。The following takes the structure shown in FIG. 8 as an example to specifically describe the processing steps of the present disclosure. In this embodiment, the conductive through holes used to electrically connect the acoustic device and the outer sealing ring may be provided in the device substrate or the packaging substrate, and different lead-out methods should be included in the present disclosure.
图14为步骤901衬底制作(即器件基底制作)的实施例，如图14所示，声学器件5及第一密封圈材料2等均已制作在器件基底1上，且盲孔11也制作在器件基底1上。14 is an embodiment of step 901 substrate fabrication (ie, device base fabrication). As shown in FIG. 14, the acoustic device 5 and the first sealing ring material 2 have been fabricated on the device substrate 1, and the blind hole 11 has also been fabricated On the device substrate 1.
图15为步骤902盖层制作(即封装基底制作)的实施例，如图15所示，第二密封圈材料3及电镀种子层10已制作在封装基底4上。FIG. 15 is an embodiment of step 902 of manufacturing the cap layer (ie, manufacturing of the package substrate). As shown in FIG. 15, the second sealing ring material 3 and the electroplating seed layer 10 have been manufactured on the package substrate 4.
图16为步骤903晶片键合(即两个基底对置键合)的实施例，将封装基底4对准倒扣在器件基底1上，第一密封圈材料与第二密封圈材料对准而形成密封圈或密封层。如图16所示，内部空腔或封装空间6形成。Figure 16 is an embodiment of step 903 wafer bonding (ie, two substrates are bonded oppositely). The package substrate 4 is aligned upside down on the device substrate 1, and the first sealing ring material is aligned with the second sealing ring material. Form a sealing ring or sealing layer. As shown in Fig. 16, an internal cavity or packaging space 6 is formed.
图17为步骤904晶片减薄及焊盘制作的实施例，该减薄通过CMP(化学机械抛光工艺)实现，盲孔通过CMP暴露出来形成导电通孔11并与导电焊盘12电连接。FIG. 17 is an embodiment of wafer thinning and pad fabrication in step 904. The thinning is achieved by CMP (Chemical Mechanical Polishing Process), and the blind holes are exposed through CMP to form conductive vias 11 and electrically connected with conductive pads 12.
图18为步骤905划片的实施例，在该步骤中，将裸器件分离出来。Figure 18 is an embodiment of step 905 dicing, in which bare devices are separated.
图19为步骤907为器件装配与残渣去除的实施例，在步骤907中，多颗图18中的裸器件利用焊球13装配到基板14上。此时用于外密封圈的电镀种子层利用通孔11、器件基底1的导电焊盘12、焊球13以及基板14中的导电引线15连接到一起，这样通过在基板14的导电引线15上加电，即可实现外密封圈的定向电镀作业。FIG. 19 is an embodiment in which step 907 is device assembly and residue removal. In step 907, a plurality of bare devices in FIG. 18 are assembled on the substrate 14 using solder balls 13. At this time, the electroplating seed layer for the outer seal ring is connected together by the through hole 11, the conductive pad 12 of the device base 1, the solder ball 13, and the conductive lead 15 in the substrate 14, so that it passes on the conductive lead 15 of the substrate 14 The directional electroplating operation of the outer sealing ring can be realized after power-on.
图20为步骤908填充底胶的实施例，基板14的表面以及焊球13等均被填充底胶16所保护而免于被电镀或被电镀液侵蚀。由于该工步是可选的，因此如果没有该工步或该工步与电镀909步骤顺序调换，则可能对基板14的表面焊盘、焊球13以及器件基底1下表面的导电焊盘12进行电镀。FIG. 20 is an example of filling primer in step 908. The surface of the substrate 14 and the solder balls 13 are protected by the primer filling 16 to avoid being corroded by electroplating or electroplating solution. Since this process step is optional, if there is no such process step or the process step and the electroplating 909 step are sequentially exchanged, the surface pads of the substrate 14, the solder balls 13, and the conductive pads 12 on the lower surface of the device substrate 1 may be changed. Conduct electroplating.
图21为步骤909电镀的实施例，外密封圈8电镀完成，通过控制电 镀时间，外密封圈8的填充量可以控制，其可能延伸出基底的划片边沿，图21所示为未延伸出去的情况。Figure 21 is an embodiment of electroplating in step 909. The outer sealing ring 8 is electroplated. By controlling the plating time, the filling amount of the outer sealing ring 8 can be controlled, which may extend beyond the dicing edge of the substrate. Figure 21 shows that it is not extended. Case.
图22为步骤910塑封的实施例，在该步骤中，整个器件被封装材料17所保护。FIG. 22 is an example of plastic packaging in step 910, in which the entire device is protected by the packaging material 17.
图23为步骤911单颗器件分离的实施例，在步骤911中，单个器件从整个基板上分离而为图23所示的结构。FIG. 23 is an example of separating a single device in step 911. In step 911, a single device is separated from the entire substrate to form the structure shown in FIG. 23.
在本公开中，直接对密封圈进行精确电镀加固，且还可以在器件装配后再进行电镀作业，可操作性强，工艺简单，成本低廉。In the present disclosure, precise electroplating reinforcement is directly performed on the sealing ring, and electroplating operations can also be performed after the device is assembled, with strong operability, simple process and low cost.
利用本公开的电镀密封圈的结构，可以在现有结构密封圈的***再电镀填充一层或多层金属，起到对现有密封圈的加固作用，并能获得金属替换塑封材料带来的散热能力和功率容量提升方面的优点。Using the structure of the electroplated seal ring of the present disclosure, one or more layers of metal can be electroplated and filled on the outer periphery of the seal ring of the existing structure, which can strengthen the existing seal ring, and can obtain the advantages of metal replacement of plastic packaging materials. Advantages in heat dissipation and power capacity improvement.
需要指出的是，在本公开中，各个数值范围，除了明确指出不包含端点值之外，除了可以为端点值，还可以为各个数值范围的中值，这些均在本公开的保护范围之内。It should be pointed out that in the present disclosure, each numerical range, in addition to expressly indicating that it does not include an endpoint value, can be an endpoint value or the median value of each numerical range, and these are all within the protection scope of the present disclosure. .
使用了上述的封装结构的结构器件可以用于滤波器，也可以用于含有各种电子器件，如滤波器、双工器、多工器等的电子设备。这里的电子设备，还可包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。The structural device using the above-mentioned packaging structure can be used for filters, and can also be used for electronic devices containing various electronic devices, such as filters, duplexers, multiplexers, and the like. The electronic equipment here may also include, but are not limited to, intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.
基于以上，本公开提出了如下技术方案：Based on the above, the present disclosure proposes the following technical solutions:
1、一种器件结构，包括：1. A device structure, including:
第一基底和第二基底，彼此对置的间隔开布置；The first substrate and the second substrate are arranged opposite to each other and spaced apart;
封装层，设置在对置的第一基底与第二基底之间，以限定在第一基底与第二基底之间的封装空间，封装空间具有封装高度；The packaging layer is disposed between the opposed first substrate and the second substrate to define a packaging space between the first substrate and the second substrate, and the packaging space has a packaging height;
MEMS器件，设置于第一基底和/或第二基底，且位于封装空间之内，The MEMS device is arranged on the first substrate and/or the second substrate and is located in the packaging space,
其中：in:
所述封装层包括内密封层和外密封层，所述内密封层的外侧设置有在第一基底和第二基底之间的环形槽，所述环形槽对外侧开口，所述外密封层为金属层，其覆盖所述内密封层的整个外侧，所述环形槽的开口侧在厚度方向上的距离不小于封装高度；且The packaging layer includes an inner sealing layer and an outer sealing layer. An annular groove between the first substrate and the second substrate is provided on the outer side of the inner sealing layer. The annular groove is open to the outside, and the outer sealing layer is A metal layer covering the entire outer side of the inner sealing layer, and the distance between the opening side of the annular groove in the thickness direction is not less than the package height; and
所述外密封层仅包括位于所述环形槽内的槽内部分，或者所述外密封 层包括位于所述环形槽内的槽内部分以及仅仅覆盖第一基底和/或第二基底的侧面的一部分的侧面部分，所述第一基底或第二基底设置有与所述槽内部分电连接的导电部，所述槽内部分覆盖所述内密封层的整个外侧。The outer sealing layer only includes the inner groove part located in the annular groove, or the outer sealing layer includes the inner groove part located in the annular groove and covering only the side surface of the first substrate and/or the second substrate A part of the side part, the first substrate or the second substrate is provided with a conductive part electrically connected to the inner part of the groove, and the inner part of the groove covers the entire outer side of the inner sealing layer.
2、根据1所述的器件结构，其中：2. The device structure according to 1, wherein:
所述环形槽的开口侧在厚度方向上的距离大于所述封装高度。The distance of the opening side of the annular groove in the thickness direction is greater than the package height.
3、根据2所述的器件结构，其中：3. The device structure according to 2, wherein:
所述环形槽为从所述内密封层的外侧朝向第一基底和第二基底的外侧边界的扩口形环形槽，所述环形槽的在所述厚度方向上的至少一侧设置为斜面或台阶斜面。The annular groove is a flared annular groove from the outer side of the inner sealing layer toward the outer boundary of the first base and the second base, and at least one side of the annular groove in the thickness direction is set as a slope or a step Incline.
4、根据1所述的器件结构，其中：4. The device structure according to 1, wherein:
所述MEMS器件包括体声波谐振器。The MEMS device includes a bulk acoustic wave resonator.
5、根据1所述的器件结构，其中：5. The device structure according to 1, wherein:
所述环形槽的开口侧在厚度方向上的距离在2-200μm的范围内，且封装高度在1-50μm的范围内。The distance of the opening side of the annular groove in the thickness direction is in the range of 2-200 μm, and the package height is in the range of 1-50 μm.
6、根据1所述的器件结构，其中：6. The device structure according to 1, wherein:
所述导电部包括设置在对应基底内的导电通孔；或者The conductive portion includes a conductive through hole provided in the corresponding substrate; or
所述导电部包括外露于其所在基底的侧面的导电引线，所述外密封层包括覆盖所述导电引线的外侧部分。The conductive part includes a conductive lead exposed on the side surface of the substrate where it is located, and the outer sealing layer includes an outer part covering the conductive lead.
7、根据6所述的器件结构，其中：7. The device structure according to 6, wherein:
所述导电通孔设置在内密封层的外侧而与所述外密封层的槽内部分电连接；或者The conductive through holes are arranged on the outside of the inner sealing layer to be electrically connected to the groove inner part of the outer sealing layer; or
所述导电通孔设置在内密封层的内侧，所述内密封层具有限定所述环形槽的内侧边界而与所述槽内部分电连接的导电部分，所述导电通孔与所述内密封层的所述导电部分电连接；或者The conductive through hole is provided on the inner side of the inner sealing layer, the inner sealing layer has a conductive part that defines the inner boundary of the annular groove and is electrically connected to the inner part of the groove, and the conductive through hole is sealed with the inner part. The conductive parts of the layer are electrically connected; or
所述导电通孔的设置位置在器件结构的厚度方向上与内密封层存在重叠，且所述内密封层具有限定所述环形槽的内侧边界而与所述槽内部分电连接的导电部分，所述导电通孔与所述内密封层的所述导电部分电连接。The position of the conductive through hole overlaps the inner sealing layer in the thickness direction of the device structure, and the inner sealing layer has a conductive part that defines the inner boundary of the annular groove and is electrically connected to the inner part of the groove, The conductive via is electrically connected to the conductive portion of the inner sealing layer.
8、根据1所述的器件结构，其中：所述环形槽的由第一基底限定的槽壁设置有第一电镀种子层，和/或所述环形槽的由第二基底限定的槽壁设置有第二电镀种子层。8. The device structure according to 1, wherein: the groove wall of the annular groove defined by the first substrate is provided with a first plating seed layer, and/or the groove wall of the annular groove defined by the second substrate is provided There is a second plating seed layer.
9、根据8所述的器件结构，其中：9. The device structure according to 8, wherein:
所述导电部电连接到对应的电镀种子层；和/或The conductive part is electrically connected to the corresponding electroplating seed layer; and/or
所述内密封层包括限定所述环形槽的内侧壁的导电密封部，所述导电部与所述导电密封部电连接；和/或The inner sealing layer includes a conductive sealing portion defining an inner side wall of the annular groove, and the conductive portion is electrically connected to the conductive sealing portion; and/or
所述内密封层包括限定所述环形槽的内侧壁的导电密封部，所述导电部与一个电镀种子层电连接，与所述导电部电连接的电镀种子层与对应的导电密封部连接或者不连接。The inner sealing layer includes a conductive sealing portion that defines the inner side wall of the annular groove, the conductive portion is electrically connected to an electroplating seed layer, and the electroplating seed layer electrically connected to the conductive portion is connected to a corresponding conductive sealing portion, or Not connected.
10、根据8所述的器件结构，其中：10. The device structure according to 8, wherein:
所述内密封层包括设置在第一基底从第一基底朝向第二基底延伸的第一密封层，以及设置在第二基底从第二基底朝向第一基底延伸的第二密封层，第一密封层和第二密封层彼此对置。The inner sealing layer includes a first sealing layer disposed on the first substrate and extending from the first substrate toward the second substrate, and a second sealing layer disposed on the second substrate and extending from the second substrate toward the first substrate. The layer and the second sealing layer are opposed to each other.
11、根据10所述的器件结构，其中：11. The device structure according to 10, wherein:
第一密封层和第二密封层中的至少一个为非导电密封层；且At least one of the first sealing layer and the second sealing layer is a non-conductive sealing layer; and
所述非导电密封层所对应的基底限定的环形槽的槽壁设置有电镀种子层，所述电镀种子层连接到非导电密封层或者被非导电密封层覆盖一部分。The groove wall of the annular groove defined by the base corresponding to the non-conductive sealing layer is provided with an electroplating seed layer, and the electroplating seed layer is connected to the non-conductive sealing layer or partially covered by the non-conductive sealing layer.
12、根据8所述的器件结构，其中：12. The device structure according to 8, wherein:
所述内密封层包括在横向方向上并置相接设置的内侧密封层和外侧密封层。The inner sealing layer includes an inner sealing layer and an outer sealing layer that are juxtaposed and arranged in a transverse direction.
13、根据12所述的器件结构，其中：13. The device structure according to 12, wherein:
内侧密封层和外侧密封层均为非导电密封层；Both the inner sealing layer and the outer sealing layer are non-conductive sealing layers;
所述环形槽的由第一基底限定的槽壁设置有第一电镀种子层，和/或所述环形槽的由第二基底限定的槽壁设置有第二电镀种子层；The groove wall of the annular groove defined by the first substrate is provided with a first electroplating seed layer, and/or the groove wall of the annular groove defined by the second substrate is provided with a second electroplating seed layer;
所述电镀种子层连接到外侧密封层或者被外侧密封层覆盖一部分。The electroplating seed layer is connected to the outer sealing layer or partially covered by the outer sealing layer.
14、根据12所述的器件结构，其中：14. The device structure according to 12, wherein:
内侧密封层为非导电密封层，外侧密封层为导电密封层，且外侧密封层与一侧的基底之间存在间隙；The inner sealing layer is a non-conductive sealing layer, the outer sealing layer is a conductive sealing layer, and there is a gap between the outer sealing layer and the substrate on one side;
所述环形槽的所述间隙所在的一侧由对应基底限定的槽壁设置有电镀种子层，其穿过间隙连接到内侧密封层或者被内侧密封层覆盖一部分。The groove wall defined by the corresponding base on the side of the annular groove where the gap is located is provided with an electroplating seed layer, which passes through the gap and is connected to the inner sealing layer or is partially covered by the inner sealing layer.
15、根据14所述的器件结构，其中：15. The device structure according to 14, wherein:
所述间隙在器件结构的厚度方向上的高度不大于10μm。The height of the gap in the thickness direction of the device structure is not greater than 10 μm.
16、根据1所述的器件结构，其中：16. The device structure according to 1, wherein:
所述内密封层包括限定所述环形槽的内侧壁的导电密封部，所述导电密封部与所述导电部电连接。The inner sealing layer includes a conductive sealing portion defining an inner side wall of the annular groove, and the conductive sealing portion is electrically connected with the conductive portion.
17、根据1-16中任一项所述的器件结构，还包括：17. The device structure according to any one of 1-16, further comprising:
封装基板，所述封装基板内设置有基板引线，所述器件结构的导电部与对应的基板引线电连接。A package substrate, a substrate lead is arranged in the package substrate, and the conductive part of the device structure is electrically connected to a corresponding substrate lead.
18、根据17所述的器件结构，其中：18. The device structure according to 17, wherein:
所述第一基底或第二基底与所述封装基板之间以焊球电连接；The first base or the second base and the packaging substrate are electrically connected with solder balls;
所述器件结构还包括填充所述第一基底或第二基底与所述封装基板之间的空隙的绝缘层。The device structure further includes an insulating layer filling a gap between the first base or the second base and the packaging substrate.
19、一种器件结构的制造方法，包括步骤：19. A manufacturing method of a device structure, including the steps:
提供第一基底和第二基底，两个基底的相对侧设置有封装材料，至少一个基底设置有导电部，第一基底和/或第二基底设置有MEMS器件；A first substrate and a second substrate are provided, the opposite sides of the two substrates are provided with packaging materials, at least one substrate is provided with a conductive part, and the first substrate and/or the second substrate are provided with MEMS devices;
将第一基底与第二基底对置，对应的封装材料形成内密封层，所述内密封层与第一基底以及第二基底限定封装空间，所述MEMS器件位于所述封装空间内，所述内密封层的外侧设置有在两个基底之间的环形槽，所述环形槽对外侧开口，所述导电部具有通到所述环形槽的导电路径；和The first substrate is opposed to the second substrate, and the corresponding packaging material forms an inner sealing layer. The inner sealing layer defines a packaging space with the first substrate and the second substrate. The MEMS device is located in the packaging space. The outer side of the inner sealing layer is provided with an annular groove between the two bases, the annular groove is open to the outside, and the conductive portion has a conductive path leading to the annular groove; and
将所述导电部通电，利用电镀工艺形成外密封层，所述外密封层仅包括位于所述环形槽内的槽内部分，或者所述外密封层包括位于所述环形槽内的槽内部分以及仅仅覆盖第一基底和/或第二基底的侧面的一部分的侧面部分。The conductive part is energized, and an outer sealing layer is formed by an electroplating process. The outer sealing layer includes only the inner groove portion located in the annular groove, or the outer sealing layer includes the inner groove portion located in the annular groove And the side surface part covering only a part of the side surface of the first substrate and/or the second substrate.
20、根据19所述的方法，其中：20. The method according to 19, wherein:
在提供第一基底和第二基底的步骤中，在第一基底和/或第二基底的用于限定环形槽的基底部分上设置电镀种子层。In the step of providing the first substrate and the second substrate, an electroplating seed layer is provided on the portion of the first substrate and/or the second substrate that defines the annular groove.
21、根据19所述的方法，其中：21. The method according to 19, wherein:
在将所述导电部通电，利用电镀工艺形成外密封层的步骤之前，所述方法还包括步骤：Before the step of energizing the conductive part to form an outer sealing layer by an electroplating process, the method further includes the steps:
提供封装基板，所述封装基板内设置有基板引线；Provide a package substrate, the package substrate is provided with substrate leads;
将设置在所述第一基底或第二基底的导电部与对应的基板引线电连接，Electrically connecting the conductive part provided on the first base or the second base to the corresponding lead of the substrate,
其中：将所述导电部通电的步骤包括向所述对应的基板引线通电。Wherein: the step of energizing the conductive part includes energizing the corresponding substrate lead.
22、根据19所述的方法，其中：22. The method according to 19, wherein:
在“将所述导电部通电，利用电镀工艺形成外密封层”之前，所述方法还包括步骤：去除环形槽内的残渣。Before "energizing the conductive part and forming the outer sealing layer by an electroplating process", the method further includes the step of removing the residue in the annular groove.
23、一种滤波器，包括：至少一个根据1-18中任一项所述的器件结构。23. A filter comprising: at least one device structure according to any one of 1-18.
24、一种电子设备，包括根据23所述的滤波器或者根据1-18中任一项所述的器件结构。24. An electronic device comprising the filter according to 23 or the device structure according to any one of 1-18.
尽管已经示出和描述了本公开的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本公开的原理和精神的情况下可以对这些实施例进行变化，本公开的范围由所附权利要求及其等同物限定。Although the embodiments of the present disclosure have been shown and described, for those of ordinary skill in the art, it will be understood that changes can be made to these embodiments without departing from the principle and spirit of the present disclosure, and the scope of the present disclosure is determined by The appended claims and their equivalents are defined.

Claims (24)

  1. 一种器件结构，包括：A device structure including:
    第一基底和第二基底，彼此对置的间隔开布置；The first substrate and the second substrate are arranged opposite to each other and spaced apart;
    封装层，设置在对置的第一基底与第二基底之间，以限定在第一基底与第二基底之间的封装空间，封装空间具有封装高度；The packaging layer is disposed between the opposed first substrate and the second substrate to define a packaging space between the first substrate and the second substrate, and the packaging space has a packaging height;
    MEMS器件，设置于第一基底和/或第二基底，且位于封装空间之内，The MEMS device is arranged on the first substrate and/or the second substrate and is located in the packaging space,
    其中：in:
    所述封装层包括内密封层和外密封层，所述内密封层的外侧设置有在第一基底和第二基底之间的环形槽，所述环形槽对外侧开口，所述外密封层为金属层，其覆盖所述内密封层的整个外侧，所述环形槽的开口侧在厚度方向上的距离不小于封装高度；且The packaging layer includes an inner sealing layer and an outer sealing layer. An annular groove between the first substrate and the second substrate is provided on the outer side of the inner sealing layer. The annular groove is open to the outside, and the outer sealing layer is A metal layer covering the entire outer side of the inner sealing layer, and the distance between the opening side of the annular groove in the thickness direction is not less than the package height; and
    所述外密封层仅包括位于所述环形槽内的槽内部分，或者所述外密封层包括位于所述环形槽内的槽内部分以及仅仅覆盖第一基底和/或第二基底的侧面的一部分的侧面部分，所述第一基底或第二基底设置有与所述槽内部分电连接的导电部，所述槽内部分覆盖所述内密封层的整个外侧。The outer sealing layer includes only the inner groove part located in the annular groove, or the outer sealing layer includes the inner groove part located in the annular groove and covering only the side surface of the first substrate and/or the second substrate A part of the side part, the first substrate or the second substrate is provided with a conductive part electrically connected to the inner part of the groove, and the inner part of the groove covers the entire outer side of the inner sealing layer.
  2. 根据权利要求1所述的器件结构，其中：The device structure of claim 1, wherein:
    所述环形槽的开口侧在厚度方向上的距离大于所述封装高度。The distance of the opening side of the annular groove in the thickness direction is greater than the package height.
  3. 根据权利要求2所述的器件结构，其中：The device structure of claim 2, wherein:
    所述环形槽为从所述内密封层的外侧朝向第一基底和第二基底的外侧边界的扩口形环形槽，所述环形槽的在所述厚度方向上的至少一侧设置为斜面或台阶斜面。The annular groove is a flared annular groove from the outer side of the inner sealing layer toward the outer boundary of the first base and the second base, and at least one side of the annular groove in the thickness direction is set as a slope or a step Incline.
  4. 根据权利要求1所述的器件结构，其中：The device structure of claim 1, wherein:
    所述MEMS器件包括体声波谐振器。The MEMS device includes a bulk acoustic wave resonator.
  5. 根据权利要求1所述的器件结构，其中：The device structure of claim 1, wherein:
    所述环形槽的开口侧在厚度方向上的距离在2-200μm的范围内，且封装高度在1-50μm的范围内。The distance of the opening side of the annular groove in the thickness direction is in the range of 2-200 μm, and the package height is in the range of 1-50 μm.
  6. 根据权利要求1所述的器件结构，其中：The device structure of claim 1, wherein:
    所述导电部包括设置在对应基底内的导电通孔；或者The conductive portion includes a conductive through hole provided in the corresponding substrate; or
    所述导电部包括外露于其所在基底的侧面的导电引线，所述外密封层包括覆盖所述导电引线的外侧部分。The conductive part includes a conductive lead exposed on the side surface of the substrate where it is located, and the outer sealing layer includes an outer part covering the conductive lead.
  7. 根据权利要求6所述的器件结构，其中：The device structure of claim 6, wherein:
    所述导电通孔设置在内密封层的外侧而与所述外密封层的槽内部分电连接；或者The conductive through holes are arranged on the outside of the inner sealing layer to be electrically connected to the groove inner part of the outer sealing layer; or
    所述导电通孔设置在内密封层的内侧，所述内密封层具有限定所述环形槽的内侧边界而与所述槽内部分电连接的导电部分，所述导电通孔与所述内密封层的所述导电部分电连接；或者The conductive through hole is provided on the inner side of the inner sealing layer, the inner sealing layer has a conductive part that defines the inner boundary of the annular groove and is electrically connected to the inner part of the groove, and the conductive through hole is sealed with the inner part. The conductive parts of the layer are electrically connected; or
    所述导电通孔的设置位置在器件结构的厚度方向上与内密封层存在重叠，且所述内密封层具有限定所述环形槽的内侧边界而与所述槽内部分电连接的导电部分，所述导电通孔与所述内密封层的所述导电部分电连接。The position of the conductive through hole overlaps the inner sealing layer in the thickness direction of the device structure, and the inner sealing layer has a conductive part that defines the inner boundary of the annular groove and is electrically connected to the inner part of the groove, The conductive via is electrically connected to the conductive portion of the inner sealing layer.
  8. 根据权利要求1所述的器件结构，其中：所述环形槽的由第一基底限定的槽壁设置有第一电镀种子层，和/或所述环形槽的由第二基底限定的槽壁设置有第二电镀种子层。The device structure according to claim 1, wherein: the groove wall of the annular groove defined by the first substrate is provided with a first plating seed layer, and/or the groove wall of the annular groove defined by the second substrate is provided There is a second plating seed layer.
  9. 根据权利要求8所述的器件结构，其中：The device structure according to claim 8, wherein:
    所述导电部电连接到对应的电镀种子层；和/或The conductive part is electrically connected to the corresponding electroplating seed layer; and/or
    所述内密封层包括限定所述环形槽的内侧壁的导电密封部，所述导电部与所述导电密封部电连接；和/或The inner sealing layer includes a conductive sealing portion defining an inner side wall of the annular groove, and the conductive portion is electrically connected to the conductive sealing portion; and/or
    所述内密封层包括限定所述环形槽的内侧壁的导电密封部，所述导电部与一个电镀种子层电连接，与所述导电部电连接的电镀种子层与对应的导电密封部连接或者不连接。The inner sealing layer includes a conductive sealing portion that defines the inner side wall of the annular groove, the conductive portion is electrically connected to an electroplating seed layer, and the electroplating seed layer electrically connected to the conductive portion is connected to a corresponding conductive sealing portion, or Not connected.
  10. 根据权利要求8所述的器件结构，其中：The device structure according to claim 8, wherein:
    所述内密封层包括设置在第一基底从第一基底朝向第二基底延伸的第一密封层，以及设置在第二基底从第二基底朝向第一基底延伸的第二密封层，第一密封层和第二密封层彼此对置。The inner sealing layer includes a first sealing layer disposed on the first substrate and extending from the first substrate toward the second substrate, and a second sealing layer disposed on the second substrate and extending from the second substrate toward the first substrate. The layer and the second sealing layer are opposed to each other.
  11. 根据权利要求10所述的器件结构，其中：The device structure of claim 10, wherein:
    第一密封层和第二密封层中的至少一个为非导电密封层；且At least one of the first sealing layer and the second sealing layer is a non-conductive sealing layer; and
    所述非导电密封层所对应的基底限定的环形槽的槽壁设置有电镀种子层，所述电镀种子层连接到非导电密封层或者被非导电密封层覆盖一部分。The groove wall of the annular groove defined by the base corresponding to the non-conductive sealing layer is provided with an electroplating seed layer, and the electroplating seed layer is connected to the non-conductive sealing layer or partially covered by the non-conductive sealing layer.
  12. 根据权利要求8所述的器件结构，其中：The device structure according to claim 8, wherein:
    所述内密封层包括在横向方向上并置相接设置的内侧密封层和外侧密封层。The inner sealing layer includes an inner sealing layer and an outer sealing layer that are juxtaposed and arranged in a transverse direction.
  13. 根据权利要求12所述的器件结构，其中：The device structure of claim 12, wherein:
    内侧密封层和外侧密封层均为非导电密封层；Both the inner sealing layer and the outer sealing layer are non-conductive sealing layers;
    所述环形槽的由第一基底限定的槽壁设置有第一电镀种子层，和/或所述环形槽的由第二基底限定的槽壁设置有第二电镀种子层；The groove wall of the annular groove defined by the first substrate is provided with a first electroplating seed layer, and/or the groove wall of the annular groove defined by the second substrate is provided with a second electroplating seed layer;
    所述电镀种子层连接到外侧密封层或者被外侧密封层覆盖一部分。The electroplating seed layer is connected to the outer sealing layer or partially covered by the outer sealing layer.
  14. 根据权利要求12所述的器件结构，其中：The device structure of claim 12, wherein:
    内侧密封层为非导电密封层，外侧密封层为导电密封层，且外侧密封层与一侧的基底之间存在间隙；The inner sealing layer is a non-conductive sealing layer, the outer sealing layer is a conductive sealing layer, and there is a gap between the outer sealing layer and the substrate on one side;
    所述环形槽的所述间隙所在的一侧由对应基底限定的槽壁设置有电镀种子层，其穿过间隙连接到内侧密封层或者被内侧密封层覆盖一部分。The groove wall defined by the corresponding base on the side of the annular groove where the gap is located is provided with an electroplating seed layer, which passes through the gap and is connected to the inner sealing layer or is partially covered by the inner sealing layer.
  15. 根据权利要求14所述的器件结构，其中：The device structure of claim 14, wherein:
    所述间隙在器件结构的厚度方向上的高度不大于10μm。The height of the gap in the thickness direction of the device structure is not greater than 10 μm.
  16. 根据权利要求1所述的器件结构，其中：The device structure of claim 1, wherein:
    所述内密封层包括限定所述环形槽的内侧壁的导电密封部，所述导电密封部与所述导电部电连接。The inner sealing layer includes a conductive sealing portion defining an inner side wall of the annular groove, and the conductive sealing portion is electrically connected with the conductive portion.
  17. 根据权利要求1-16中任一项所述的器件结构，还包括：The device structure according to any one of claims 1-16, further comprising:
    封装基板，所述封装基板内设置有基板引线，所述器件结构的导电部与对应的基板引线电连接。A package substrate, a substrate lead is arranged in the package substrate, and the conductive part of the device structure is electrically connected to a corresponding substrate lead.
  18. 根据权利要求17所述的器件结构，其中：The device structure of claim 17, wherein:
    所述第一基底或第二基底与所述封装基板之间以焊球电连接；The first base or the second base and the packaging substrate are electrically connected with solder balls;
    所述器件结构还包括填充所述第一基底或第二基底与所述封装基板之间的空隙的绝缘层。The device structure further includes an insulating layer filling a gap between the first base or the second base and the packaging substrate.
  19. 一种器件结构的制造方法，包括步骤：A method for manufacturing a device structure includes the steps:
    提供第一基底和第二基底，两个基底的相对侧设置有封装材料，至少一个基底设置有导电部，第一基底和/或第二基底设置有MEMS器件；A first substrate and a second substrate are provided, the opposite sides of the two substrates are provided with packaging materials, at least one substrate is provided with a conductive part, and the first substrate and/or the second substrate are provided with MEMS devices;
    将第一基底与第二基底对置，对应的封装材料形成内密封层，所述内密封层与第一基底以及第二基底限定封装空间，所述MEMS器件位于所述封装空间内，所述内密封层的外侧设置有在两个基底之间的环形槽，所述环形槽对外侧开口，所述导电部具有通到所述环形槽的导电路径；和The first substrate is opposed to the second substrate, and the corresponding packaging material forms an inner sealing layer. The inner sealing layer defines a packaging space with the first substrate and the second substrate. The MEMS device is located in the packaging space. The outer side of the inner sealing layer is provided with an annular groove between the two bases, the annular groove is open to the outside, and the conductive portion has a conductive path leading to the annular groove; and
    将所述导电部通电，利用电镀工艺形成外密封层，所述外密封层仅包括位于所述环形槽内的槽内部分，或者所述外密封层包括位于所述环形槽 内的槽内部分以及仅仅覆盖第一基底和/或第二基底的侧面的一部分的侧面部分。The conductive part is energized, and an outer sealing layer is formed by an electroplating process, the outer sealing layer includes only the inner groove part located in the annular groove, or the outer sealing layer includes the inner groove part located in the annular groove And the side surface part covering only a part of the side surface of the first substrate and/or the second substrate.
  20. 根据权利要求19所述的方法，其中：The method of claim 19, wherein:
    在提供第一基底和第二基底的步骤中，在第一基底和/或第二基底的用于限定环形槽的基底部分上设置电镀种子层。In the step of providing the first substrate and the second substrate, an electroplating seed layer is provided on the substrate portion of the first substrate and/or the second substrate for defining the annular groove.
  21. 根据权利要求19所述的方法，其中：The method of claim 19, wherein:
    在将所述导电部通电，利用电镀工艺形成外密封层的步骤之前，所述方法还包括步骤：Before the step of energizing the conductive part to form an outer sealing layer by an electroplating process, the method further includes the steps:
    提供封装基板，所述封装基板内设置有基板引线；Provide a package substrate, the package substrate is provided with substrate leads;
    将设置在所述第一基底或第二基底的导电部与对应的基板引线电连接，Electrically connecting the conductive part provided on the first base or the second base to the corresponding lead of the substrate,
    其中：将所述导电部通电的步骤包括向所述对应的基板引线通电。Wherein: the step of energizing the conductive part includes energizing the corresponding substrate lead.
  22. 根据权利要求19所述的方法，其中：The method of claim 19, wherein:
    在“将所述导电部通电，利用电镀工艺形成外密封层”之前，所述方法还包括步骤：去除环形槽内的残渣。Before "energizing the conductive part and forming the outer sealing layer by an electroplating process", the method further includes the step of removing the residue in the annular groove.
  23. 一种滤波器，包括：至少一个根据权利要求1-18中任一项所述的器件结构。A filter comprising: at least one device structure according to any one of claims 1-18.
  24. 一种电子设备，包括根据权利要求23所述的滤波器或者根据权利要求1-18中任一项所述的器件结构。An electronic device comprising the filter according to claim 23 or the device structure according to any one of claims 1-18.
PCT/CN2021/090264 2020-04-28 2021-04-27 Device structure and manufacturing method therefor, and filter and electronic device WO2021218967A1 (en)

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