WO2021215472A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2021215472A1
WO2021215472A1 PCT/JP2021/016173 JP2021016173W WO2021215472A1 WO 2021215472 A1 WO2021215472 A1 WO 2021215472A1 JP 2021016173 W JP2021016173 W JP 2021016173W WO 2021215472 A1 WO2021215472 A1 WO 2021215472A1
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WO
WIPO (PCT)
Prior art keywords
plating layer
lead
semiconductor device
wire
main surface
Prior art date
Application number
PCT/JP2021/016173
Other languages
French (fr)
Japanese (ja)
Inventor
大地 丹羽
光俊 齊藤
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to DE212021000165.3U priority Critical patent/DE212021000165U1/en
Publication of WO2021215472A1 publication Critical patent/WO2021215472A1/en

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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
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    • H01L2924/183—Connection portion, e.g. seal
    • H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part

Definitions

  • This disclosure relates to semiconductor devices.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • This semiconductor device includes a semiconductor element, a lead frame, a plurality of wires, and a sealing resin.
  • the lead frame is made of, for example, copper.
  • the lead frame has a die pad portion and a plurality of lead portions.
  • the die pad portion supports the semiconductor element.
  • Each of the plurality of lead portions is electrically connected to the semiconductor element via a wire.
  • the sealing resin covers the semiconductor element.
  • the wire connecting the semiconductor element and the lead frame is made of, for example, gold (Au), copper (Cu), and aluminum (Al). Since the wire made of Au is expensive, there is room for consideration in terms of cost in a semiconductor device having a large number of wires. Since the wire made of Cu is hard, there is room for consideration in that the processing is performed so as not to damage the semiconductor element at the time of bonding. Since the wire made of Al is soft and low in cost, it has an advantage over the wire made of Au or Cu.
  • the lead frame is made of Cu
  • a wire made of Al is directly bonded to the lead frame of Cu
  • a metal compound is generated between the wire and the lead frame.
  • the intermetallic compound may grow due to heat generated by the operation of the semiconductor device, resulting in a decrease in reliability.
  • An object of the present disclosure is to provide a semiconductor device that uses a wire made of aluminum and can suppress a decrease in reliability.
  • the semiconductor device includes a first lead having a first main surface and a first back surface facing the direction opposite to the first main surface, and the first main surface with respect to the first lead.
  • a wire for electrically connecting the electrode and the second main surface, a semiconductor element, and a sealing resin for sealing the wire are provided, the wire contains Al, and the second lead contains Cu. It has a second base material having an upper surface facing the same direction as the first main surface, and a second plating layer covering the upper surface of the second base material and having the second main surface as a surface.
  • the second plating layer includes a Ni plating layer laminated on the upper surface of the second base material, a Pd plating layer laminated on the Ni plating layer, and an Au plating layer laminated on the Pd plating layer.
  • the second lead connecting the wires includes a second base material made of Cu and a second plating layer on the surface of the second base material.
  • the second plating layer includes a Ni plating layer, a Pd plating layer, and an Au plating layer.
  • FIG. 7-7 is a cross-sectional view taken along the line 7-7 of FIG.
  • FIG. 8-8 is a cross-sectional view taken along the line 8-8 of FIG.
  • the semiconductor device A1 has, for example, a rectangular parallelepiped shape.
  • the thickness direction of the semiconductor device A1 is the Z direction
  • the direction orthogonal to the Z direction is the X direction (second direction)
  • the Z direction and the direction orthogonal to the X direction are the Y direction (first direction).
  • the plan view means viewing the object from the Z direction.
  • the semiconductor device A1 includes a first lead 10, a second lead 20, a semiconductor element 50, a bonding material 60, a wire 70, a sealing resin 80, and a terminal plating layer 90.
  • the sealing resin 80 is shown by a chain double-dashed line, and the members in the sealing resin 80 are shown by a solid line.
  • the terminal plating layer 90 (plating layers 91 to 93) is omitted.
  • the first lead 10 and the second lead 20 are arranged in the Y direction.
  • the second lead 20 includes a control lead 30 and a drive lead 40 arranged in the X direction.
  • the first lead 10 has a main surface 101, a back surface 102, and a back surface recess 103.
  • the main surface 101 and the back surface 102 face in opposite directions in the Z direction.
  • the back surface recess 103 is a portion of the first lead 10 that is recessed in the Z direction from the back surface 102.
  • the first lead 10 has a terminal portion 11, a connecting portion 12, and a die bonding portion 13.
  • the terminal portion 11 is provided at a position avoiding the back surface recess 103 in a plan view.
  • the terminal portion 11 has a rectangular shape in a plan view.
  • the terminal portion 11 has a terminal end surface 111 and a terminal back surface 112.
  • the terminal end face 111 faces the X direction and is exposed from the sealing resin 80.
  • the terminal back surface 112 is a part of the back surface 102.
  • the terminal back surface 112 is exposed from the sealing resin 80.
  • the connecting portion 12 is a portion included in the back surface recess 103 in a plan view.
  • the connecting portion 12 has a connecting end face 121.
  • the connecting end face 121 faces in the Y direction and is exposed from the sealing resin 80.
  • the die bonding portion 13 is a portion surrounded by the back surface recess 103 in a plan view. In the present embodiment, the die bonding portion 13 has a rectangular shape in a plan view.
  • the die bonding portion 13 has a die bonding back surface 132.
  • the die bonding back surface 132 is a part of the back surface 102 of the first lead 10. The die bonding back surface 132 is exposed from the sealing resin 80.
  • a plating layer 15 is formed on a portion of the first lead 10 other than the terminal end face 111 and the connecting end face 121, which are surfaces exposed from the sealing resin 80.
  • the first lead 10 includes a base material 14 and a plating layer 15.
  • the base material 14 is substantially made of Cu (copper).
  • substantially made of Cu means that it is formed of Cu or an alloy containing Cu as a main component.
  • the base material 14 contains about 95% or more of Cu.
  • the base metal 14 contains about 98% or more Cu. More preferably, the base metal 14 contains about 99% or more of Cu.
  • the base material 14 may contain impurities of less than about 5%.
  • the base metal 14 is formed by using, for example, a metal plate formed by rolling.
  • the base material 14 is obtained by plating an etching frame obtained by etching a metal plate and then cutting the metal plate. Therefore, the base material 14 is exposed on the terminal end face 111 and the connecting end face 121.
  • the plating layer 15 of the present embodiment is composed of three plating layers 151, 152, and 153.
  • the plating layer 151 is substantially made of Ni (nickel). Substantially composed of Ni is intended to be formed of Ni or an alloy containing Ni as a main component.
  • the plating layer 151 contains about 95% or more of Ni. Preferably, the plating layer 151 contains about 98% or more Ni. More preferably, the plating layer 151 contains about 99% or more of Ni.
  • the plating layer 151 may contain impurities of less than about 5%.
  • the plating layer 152 is substantially made of Pd (palladium). By substantially consisting of Pd, it is intended that it is formed of Pd or an alloy containing Pd as a main component.
  • the plating layer 152 contains about 95% or more of Pb. Preferably, the plating layer 152 contains about 98% or more of Pb. More preferably, the plating layer 152 contains about 99% or more of Pb. The plating layer 152 may contain impurities of less than about 5%.
  • the plating layer 153 is substantially made of Au (gold). Substantially composed of Au is intended to be formed of Au or an alloy containing Au as a main component.
  • the plating layer 153 contains about 95% or more Au. Preferably, the plating layer 153 contains about 98% or more Au. More preferably, the plating layer 153 contains about 99% or more Au.
  • the plating layer 153 may contain impurities of less than about 5%.
  • the plating layers 151, 152, and 153 may be referred to as a Ni plating layer 151, a Pd plating layer 152, and an Au plating layer 153.
  • the Ni plating layer 151, the Pd plating layer 152, and the Au plating layer 153 are laminated in this order from the surface of the base metal 14. That is, the Ni plating layer 151 is laminated on the surface of the base material 14, the Pd plating layer 152 is laminated on the surface of the Ni plating layer 151, and the Au plating layer 153 is laminated on the surface of the Pd plating layer 152.
  • the Ni plating layer 151, the Pd plating layer 152, and the Au plating layer 153 are formed by, for example, an electrolytic plating method.
  • the control lead 30 has a main surface 301, a back surface 302, and a back surface recess 303.
  • the main surface 301 and the back surface 302 face in opposite directions in the Z direction.
  • the back surface recess 303 is a portion of the control lead 30 recessed in the Z direction from the back surface 302.
  • the control lead 30 has a terminal portion 31 and a connecting portion 32.
  • the terminal portion 31 is provided at a position avoiding the back surface recess 303 in a plan view.
  • the terminal portion 31 has a rectangular shape in a plan view.
  • the terminal portion 31 has a terminal end surface 311 and a terminal back surface 312.
  • the terminal end surface 311 faces the X direction and is exposed from the sealing resin 80.
  • the terminal back surface 312 is a part of the back surface 302. The terminal back surface 312 is exposed from the sealing resin 80.
  • the connecting portion 32 is a portion included in the back surface recess 303 in a plan view.
  • the connecting portion 32 has a connecting end face 321.
  • the connecting end face 321 faces the Y direction and is exposed from the sealing resin 80.
  • a plating layer 35 is formed on a portion of the control lead 30 excluding the terminal end surface 311 and the connecting end surface 321 which are the surfaces exposed from the sealing resin 80.
  • the control lead 30 includes a base material 34 and a plating layer 35.
  • the base material 34 is substantially made of Cu (copper).
  • substantially made of Cu means that it is formed of Cu or an alloy containing Cu as a main component.
  • the base material 34 contains about 95% or more of Cu.
  • the base metal 34 contains about 98% or more Cu. More preferably, the base metal 34 contains about 99% or more of Cu.
  • the base metal 34 may contain less than about 5% impurities.
  • the base metal 34 is formed by using, for example, a metal plate formed by rolling.
  • the base material 34 is obtained by plating an etching frame obtained by etching a metal plate and then cutting the metal plate. Therefore, the base material 34 is exposed on the terminal end face 311 and the connecting end face 321.
  • the plating layer 35 of the present embodiment is composed of three plating layers 351,352,353.
  • the plating layer 351 is substantially made of Ni (nickel). Substantially composed of Ni is intended to be formed of Ni or an alloy containing Ni as a main component.
  • the plating layer 351 contains about 95% or more of Ni. Preferably, the plating layer 351 contains about 98% or more Ni. More preferably, the plating layer 351 contains about 99% or more of Ni.
  • the plating layer 351 may contain impurities of less than about 5%.
  • the plating layer 352 is substantially made of Pd (palladium). By substantially consisting of Pd, it is intended that it is formed of Pd or an alloy containing Pd as a main component.
  • the plating layer 352 contains about 95% or more of Pb. Preferably, the plating layer 352 contains about 98% or more of Pb. More preferably, the plating layer 352 contains about 99% or more of Pb. The plating layer 352 may contain impurities of less than about 5%.
  • the plating layer 353 is substantially made of Au (gold). Substantially composed of Au is intended to be formed of Au or an alloy containing Au as a main component.
  • the plating layer 353 contains about 95% or more Au. Preferably, the plating layer 353 contains about 98% or more Au. More preferably, the plating layer 353 contains about 99% or more Au.
  • the plating layer 353 may contain impurities of less than about 5%.
  • the plating layers 351 and 352 and 353 may be referred to as Ni plating layer 351 and Pd plating layer 352 and Au plating layer 353.
  • the Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 are laminated in this order from the surface of the base metal 34. That is, the Ni plating layer 351 is laminated on the surface of the base material 34, the Pd plating layer 352 is laminated on the surface of the Ni plating layer 351 and the Au plating layer 353 is laminated on the surface of the Pd plating layer 352.
  • the Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 are formed by, for example, an electrolytic plating method.
  • the drive lead 40 has a main surface 401, a back surface 402, and a back surface recess 403.
  • the main surface 401 and the back surface 402 face in opposite directions in the Z direction.
  • the back surface recess 403 is a portion of the drive lead 40 recessed in the Z direction from the back surface 402.
  • the main surface 401 of the drive lead 40 and the main surface 301 of the control lead 30 form the main surface (second main surface) of the second lead 20.
  • the back surface 402 of the drive lead 40 and the back surface 302 of the control lead 30 form the back surface (second back surface) of the second lead 20.
  • the drive lead 40 has a terminal portion 41, a connecting portion 42, and a wire bonding portion 43.
  • the terminal portion 41 is provided at a position avoiding the back surface recess 403 in a plan view.
  • the terminal portion 41 has a rectangular shape in a plan view.
  • the terminal portion 41 has a terminal end surface 411 and a terminal back surface 412.
  • the terminal end surface 411 faces the X direction and is exposed from the sealing resin 80.
  • the terminal back surface 412 is a part of the back surface 402. The terminal back surface 412 is exposed from the sealing resin 80.
  • the connecting portion 42 is a portion included in the back surface recess 403 in a plan view.
  • the connecting portion 42 has a connecting end face 421.
  • the connecting end face 421 faces in the Y direction and is exposed from the sealing resin 80.
  • the wire bonding portion 43 is a portion surrounded by a recess on the back surface in a plan view.
  • the wire bonding portion 43 has a rectangular shape in a plan view.
  • the wire bonding portion 43 has a wire bonding back surface 432.
  • the wire bonding back surface 432 is a part of the back surface 402.
  • the wire bonding back surface 432 is exposed from the sealing resin 80.
  • a plating layer 45 is formed on a portion of the drive lead 40 excluding the terminal end surface 411 and the connecting end surface 421, which are surfaces exposed from the sealing resin 80.
  • the drive lead 40 includes a base material 44 and a plating layer 45.
  • the base material 44 is substantially made of Cu (copper).
  • substantially made of Cu means that it is formed of Cu or an alloy containing Cu as a main component.
  • the base material 44 contains about 95% or more of Cu.
  • the base metal 44 contains about 98% or more Cu. More preferably, the base metal 44 contains about 99% or more of Cu.
  • the base metal 44 may contain less than about 5% impurities.
  • the base metal 44 is formed by using, for example, a metal plate formed by rolling.
  • the base metal 44 is obtained by plating an etching frame obtained by etching a metal plate and then cutting the metal plate. Therefore, the base material 44 is exposed on the terminal end face 411 and the connecting end face 421.
  • the plating layer 45 of the present embodiment is composed of three plating layers 451, 452, 453.
  • the plating layer 451 is substantially made of Ni (nickel). Substantially composed of Ni is intended to be formed of Ni or an alloy containing Ni as a main component.
  • the plating layer 451 contains about 95% or more of Ni. Preferably, the plating layer 451 contains about 98% or more Ni. More preferably, the plating layer 451 contains about 99% or more of Ni.
  • the plating layer 451 may contain less than about 5% impurities.
  • the plating layer 452 is substantially made of Pd (palladium). By substantially consisting of Pd, it is intended that it is formed of Pd or an alloy containing Pd as a main component.
  • the plating layer 452 contains about 95% or more of Pb. Preferably, the plating layer 452 contains about 98% or more of Pb. More preferably, the plating layer 452 contains about 99% or more of Pb. The plating layer 452 may contain less than about 5% impurities.
  • the plating layer 453 is substantially made of Au (gold). Substantially composed of Au is intended to be formed of Au or an alloy containing Au as a main component.
  • the plating layer 453 contains about 95% or more Au. Preferably, the plating layer 453 contains about 98% or more Au. More preferably, the plating layer 453 contains about 99% or more Au.
  • the plating layer 453 may contain impurities of less than about 5%.
  • the plating layers 451 and 452 and 453 may be referred to as a Ni plating layer 451 and a Pd plating layer 452 and an Au plating layer 453.
  • the Ni plating layer 451 and the Pd plating layer 452 and the Au plating layer 453 are laminated in this order from the surface of the base metal 44. That is, the Ni plating layer 451 is laminated on the surface of the base material 44, the Pd plating layer 452 is laminated on the surface of the Ni plating layer 451 and the Au plating layer 453 is laminated on the surface of the Pd plating layer 452.
  • the Ni plating layer 451 and the Pd plating layer 452 and the Au plating layer 453 are formed by, for example, an electrolytic plating method.
  • the semiconductor element 50 is mounted on the main surface 101 of the first lead 10.
  • the semiconductor element 50 is a member that exerts an electrical function of the semiconductor device A1.
  • the semiconductor element 50 is, for example, a transistor, and in this embodiment, a MOSFET (metal-oxide-semiconductor field-effect transistor) is used.
  • the MOSFET may be made of Si (silicon), SiC (silicon carbide), GaN (gallium nitride), or the like.
  • the semiconductor element 50 may be a transistor such as an IGBT (Insulated Gate Bipolar Transistor) or another bipolar transistor instead of the MOSFET.
  • the semiconductor element 50 has a rectangular flat plate shape.
  • the semiconductor element 50 has an element main surface 501 and an element back surface 502.
  • the element main surface 501 and the element back surface 502 face in opposite directions in the Z direction.
  • the semiconductor element 50 has a main surface electrode 51 on the element main surface 501. Further, the semiconductor element 50 has a back surface electrode 54 on the back surface 502 of the device.
  • the main surface electrode 51 has a control electrode 52 and a drive electrode 53.
  • the control electrode 52 constitutes a gate electrode
  • the drive electrode 53 constitutes a source electrode
  • the back surface electrode 54 constitutes a drain electrode.
  • the back surface electrode 54 is bonded to the main surface 101 of the first lead 10 by the bonding material 60.
  • the bonding material 60 has conductivity and electrically connects the back surface electrode 54 and the first lead 10.
  • the bonding material 60 is made of, for example, Ag (silver) paste.
  • the Ag paste is composed of a synthetic resin whose main material is a resin material containing Ag (for example, epoxy resin).
  • the Ag paste contains about 75-90% Ag.
  • the Ag paste contains 80-90% Ag. More preferably, the Ag paste contains 80-85% Ag.
  • the back surface electrode 54 is a drain electrode of the semiconductor element 50. Therefore, the first lead 10 is a drain terminal of the semiconductor device A1.
  • the wire 70 has a control wire 71 and a drive wire 72.
  • the control wire 71 is connected to the control electrode 52 of the semiconductor element 50 and the terminal portion 31 of the control lead 30. That is, the terminal portion 31 also functions as a wire bonding portion for connecting the control wire 71.
  • the control wire 71 is bonded to the control electrode 52 and the control lead 30 by, for example, ultrasonic bonding.
  • the drive wire 72 is connected to the drive electrode 53 of the semiconductor element 50 and the wire bonding portion 43 of the drive lead 40.
  • the drive wire 72 is bonded to the drive electrode 53 and the drive lead 40 by, for example, ultrasonic bonding.
  • the semiconductor device A1 has two drive wires 72.
  • the number of drive wires 72 is set according to the amount of current flowing through the semiconductor device A1.
  • the sealing resin 80 seals a part of the first lead 10 and the second lead 20 (control lead 30, drive lead 40), the semiconductor element 50, and the wire 70 (control wire 71, drive wire 72). ing.
  • the sealing resin 80 is made of a resin material having electrical insulation.
  • the resin material is, for example, an epoxy resin.
  • the sealing resin 80 is colored, for example, black.
  • the sealing resin 80 has a resin main surface 801 and a resin back surface 802, and a resin side surface 803, 804, 805, 806.
  • the resin main surface 801 and the resin back surface 802 face in opposite directions in the Z direction.
  • the resin main surface 801 faces the same direction as the main surface 101 of the first lead 10, the main surface 301 of the control lead 30, and the main surface 401 of the drive lead 40.
  • the resin side surfaces 803 and 804 face in opposite directions in the X direction.
  • the resin side surfaces 805 and 806 face in opposite directions in the Y direction.
  • the back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40 are exposed from the resin back surface 802 of the sealing resin 80.
  • the back surfaces 102, 302, and 402 are flush with the resin back surface 802.
  • the terminal end surface 111 of the first lead 10 and the terminal end surface 311 of the control lead 30 are exposed from the resin side surface 803.
  • the terminal end faces 111 and 311 are flush with the resin side surface 803.
  • the terminal end surface 111 of the first lead 10 and the terminal end surface 411 of the drive lead 40 are exposed from the resin side surface 804.
  • the terminal end faces 111 and 411 are flush with the resin side surface 804.
  • the connecting end surface 321 of the control lead 30 and the connecting end surface 421 of the drive lead 40 are exposed from the resin side surface 805.
  • Each connecting end face 321 and 421 is flush with the resin side surface 805.
  • the connecting end surface 121 of the first lead 10 is exposed from the resin side surface 806.
  • the connecting end surface 121 is flush with the resin side surface 806.
  • the semiconductor device A1 has a terminal plating layer 90 that covers the back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40.
  • the terminal plating layer 90 includes a plating layer 91 that covers the back surface 102 of the first lead 10, and plating layers 92 and 93 that cover the back surface 302 of the control lead 30 and the back surface 402 of the drive lead 40.
  • the back surface 102 of the first lead 10 includes the terminal back surface 112 and the die bonding back surface 132.
  • a plating layer 91 as a third plating layer is formed on the terminal back surface 112 and the die bonding back surface 132.
  • the plating layer 91 is a metal coating exposed from the resin back surface 802 of the sealing resin 80.
  • the plating layer 91 projects in the Z direction from the resin back surface 802.
  • the plating layer 91 is substantially made of, for example, Sn (tin). By substantially consisting of Sn, it is intended that it is formed of Sn or an alloy containing Sn as a main component.
  • the plating layer 91 contains about 95% or more of Sn.
  • the plating layer 91 contains about 98% or more Sn. More preferably, the plating layer 91 contains about 99% or more of Sn.
  • the plating layer 91 may contain impurities of less than about 5%.
  • the back surface 302 of the control lead 30 includes the terminal back surface 312 of the terminal portion 31.
  • a plating layer 92 as a fourth plating layer is formed on the terminal back surface 312.
  • the plating layer 92 is a metal coating exposed from the resin back surface 802 of the sealing resin 80.
  • the plating layer 92 projects in the Z direction from the resin back surface 802.
  • the plating layer 92 is, for example, substantially made of Sn. By substantially consisting of Sn, it is intended that it is formed of Sn or an alloy containing Sn as a main component.
  • the plating layer 92 contains about 95% or more of Sn.
  • the plating layer 92 contains about 98% or more Sn. More preferably, the plating layer 92 contains about 99% or more of Sn.
  • the plating layer 92 may contain impurities of less than about 5%.
  • the back surface 402 of the drive lead 40 includes a terminal back surface 412 and a wire bonding back surface 432.
  • a plating layer 93 as a fourth plating layer is formed on the terminal back surface 412 and the wire bonding back surface 432.
  • the plating layer 93 is a metal coating exposed from the resin back surface 802 of the sealing resin 80.
  • the plating layer 93 projects in the Z direction from the resin back surface 802.
  • the plating layer 93 is made of, for example, substantially Sn. By substantially consisting of Sn, it is intended that it is formed of Sn or an alloy containing Sn as a main component.
  • the plating layer 93 contains about 95% or more of Sn.
  • the plating layer 93 contains about 98% or more Sn. More preferably, the plating layer 93 contains about 99% or more of Sn.
  • the plating layer 93 may contain impurities of less than about 5%.
  • FIG. 12 shows a lead frame F1 forming the first lead 10 and the second lead 20.
  • the lead frame F1 is a plate-shaped material.
  • the lead frame F1 includes a base material 14 of the first lead 10 and a base material 34 and a base material 44 of the control lead 30 and the drive lead 40 constituting the second lead 20.
  • the hatched portion is a portion serving as a die bonding portion 13 of the first lead 10, a terminal portion 31 of the control lead 30, a terminal portion 41 of the drive lead 40, and a wire bonding portion 43.
  • the two-dot chain line shown in FIG. 12 is the cutting line L1 when the semiconductor device A1 is separated into individual pieces.
  • the first lead 10 and the second lead 20 (control lead 30, drive lead 40) are connected to a rectangular frame-shaped frame portion F11 larger than the cutting line L1. More specifically, the terminal portion 11 and the connecting portion 12 of the first lead 10 extend to the rectangular frame-shaped frame portion F11 and are connected to the frame portion F11.
  • the terminal portion 31 and the connecting portion 32 of the control lead 30 extend to the frame portion F11 and are connected to the frame portion F11.
  • the terminal portion 41 and the connecting portion 42 of the drive lead 40 extend to the frame portion F11 and are connected to the frame portion F11.
  • the lead frame F1 is plated by, for example, an electrolytic plating method to form the plating layers 15, 35, 45 shown in FIGS. 9 to 11.
  • the semiconductor element 50 shown in FIG. 1 and the like is mounted on the first lead 10.
  • the wire 70 is connected.
  • the control wire 71 is connected to the control electrode 52 and the control lead 30 of the semiconductor element 50, and the drive wire 72 is connected to the drive electrode 53 and the drive lead 40 of the semiconductor element 50.
  • the semiconductor element 50 and the like are sealed with the sealing resin 80.
  • the plating layers 91 to 93 shown in FIG. 2 and the like are formed by, for example, an electrolytic plating method.
  • the lead frame F1 and the sealing resin 80 are cut along the cutting line L1 shown in FIG.
  • the terminal portion 11 and the connecting portion 12 of the first lead 10 are separated from the frame portion F11.
  • the terminal portion 31 and the connecting portion 32 of the control lead 30 are separated from the frame portion F11.
  • the terminal portion 41 and the connecting portion 42 of the drive lead 40 are separated from the frame portion F11.
  • individual pieces to be the semiconductor device A1 are formed.
  • the semiconductor device A1 includes a first lead 10, a second lead 20, and a semiconductor element 50 mounted on the first lead 10.
  • the second lead 20 includes a control lead 30 and a drive lead 40.
  • the main surface electrode 51 of the semiconductor element 50 includes a control electrode 52 and a drive electrode 53.
  • the control electrode 52 is connected to the control lead 30 by a control wire 71.
  • the drive electrode 53 is connected to the drive lead 40 by a drive wire 72.
  • Each of the control wire 71 and the drive wire 72 (wire 70) is substantially made of Al.
  • the term "substantially composed of Al" means that it is formed of Al or an alloy containing Al as a main component.
  • Each of the control wire 71 and the drive wire 72 contains about 95% or more of Al.
  • each of the control wire 71 and the drive wire 72 contains about 98% or more of Al. More preferably, each of the control wire 71 and the drive wire 72 contains about 99% or more of Al.
  • Each of the control wire 71 and the drive wire 72 may contain less than about 5% impurities. Therefore, the cost increase of the semiconductor device A1 can be suppressed as compared with the case of using the wire made of Au. Further, the influence on the semiconductor element 50 can be reduced as compared with the case where the wire made of Cu is used.
  • the surface of the control lead 30 is covered with a plating layer 35.
  • the plating layer 35 includes a Ni plating layer 351, a Pd plating layer 352, and an Au plating layer 353.
  • the control lead 30 is composed of only Cu
  • the intermetallic compound generated between the control wire 71 substantially made of Al and the control lead 30 is grown by heat, and the control wire 71 is transferred from the control lead 30. It will be separated, etc. Therefore, the plating layer 35 including the Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 prevents the formation of intermetallic compounds and suppresses the control wire 71 from separating from the control lead 30.
  • the surface of the drive lead 40 is covered with the plating layer 45.
  • the plating layer 45 includes a Ni plating layer 451, a Pd plating layer 452, and an Au plating layer 453.
  • the drive lead 40 is composed of only Cu
  • the intermetallic compound generated between the drive wire 72 substantially made of Al and the drive lead 40 is grown by heat, and the drive wire 72 is moved from the drive lead 40. It will be separated, etc. Therefore, the plating layer 45 including the Ni plating layer 451, the Pd plating layer 452, and the Au plating layer 453 prevents the formation of intermetallic compounds and prevents the drive wire 72 from separating from the drive lead 40.
  • the surface of the first lead 10 is covered with the plating layer 15.
  • the plating layer 15 includes a Ni plating layer 151, a Pd plating layer 152, and an Au plating layer 153.
  • the semiconductor element 50 is bonded to the main surface 101 of the first lead 10 by the bonding material 60.
  • the bonding material 60 has conductivity and is substantially made of Ag paste.
  • the Ag paste has low bondability with, for example, the Ni plating layer 151. Therefore, by laminating the Pd plating layer 152 and the Au plating layer 153 on the Ni plating layer 151, the bondability with the bonding material 60 substantially made of Ag paste can be ensured, and the mounting strength of the semiconductor element 50 can be secured. ..
  • the back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40 are exposed from the resin back surface 802 of the sealing resin 80.
  • a plating layer 91 is formed on the back surface 102 of the first lead 10.
  • a plating layer 92 is formed on the back surface 302 of the control lead 30.
  • a plating layer 93 is formed on the back surface 402 of the drive lead 40.
  • the plating layers 91, 92, and 93 are substantially made of Sn. Solder adheres to these plating layers 91, 92, and 93 when the semiconductor device A1 is mounted on a circuit board. Therefore, the mounting strength of the semiconductor device A1 on the circuit board can be increased.
  • the semiconductor device A1 includes a first lead 10, a second lead 20, and a semiconductor element 50 mounted on the first lead 10.
  • the second lead 20 includes a control lead 30 and a drive lead 40.
  • the main surface electrode 51 of the semiconductor element 50 includes a control electrode 52 and a drive electrode 53.
  • the control electrode 52 is connected to the control lead 30 by a control wire 71.
  • the drive electrode 53 is connected to the drive lead 40 by a drive wire 72.
  • the control wire 71 and the drive wire 72 (wire 70) are substantially made of Al. Therefore, the cost increase of the semiconductor device A1 can be suppressed as compared with the case of using the wire made of Au. Further, the influence on the semiconductor element 50 can be reduced as compared with the case where the wire made of Cu is used.
  • the surface of the control lead 30 is covered with the plating layer 35.
  • the plating layer 35 includes a Ni plating layer 351, a Pd plating layer 352, and an Au plating layer 353.
  • the control lead 30 is composed of only Cu
  • the intermetallic compound generated between the control wire 71 substantially made of Al and the control lead 30 is grown by heat, and the control wire 71 is transferred from the control lead 30. It will be separated, etc. Therefore, the plating layer 35 including the Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 prevents the formation of intermetallic compounds and suppresses the control wire 71 from separating from the control lead 30.
  • the surface of the drive lead 40 is covered with the plating layer 45.
  • the plating layer 45 includes a Ni plating layer 451, a Pd plating layer 452, and an Au plating layer 453.
  • the drive lead 40 is composed of only Cu
  • the intermetallic compound generated between the drive wire 72 substantially made of Al and the drive lead 40 is grown by heat, and the drive wire 72 is moved from the drive lead 40. It will be separated, etc. Therefore, the plating layer 45 including the Ni plating layer 451, the Pd plating layer 452, and the Au plating layer 453 prevents the formation of intermetallic compounds and prevents the drive wire 72 from separating from the drive lead 40.
  • the surface of the first lead 10 is covered with the plating layer 15.
  • the plating layer 15 includes a Ni plating layer 151, a Pd plating layer 152, and an Au plating layer 153.
  • the semiconductor element 50 is bonded to the main surface 101 of the first lead 10 by the bonding material 60.
  • the bonding material 60 has conductivity and is substantially made of Ag paste.
  • the Ag paste has low bondability with, for example, the Ni plating layer 151. Therefore, by laminating the Pd plating layer 152 and the Au plating layer 153 on the Ni plating layer 151, the bondability with the bonding material 60 substantially made of Ag paste can be ensured, and the mounting strength of the semiconductor element 50 can be secured. ..
  • the back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40 are exposed from the resin back surface 802 of the sealing resin 80.
  • a plating layer 91 is formed on the back surface 102 of the first lead 10.
  • a plating layer 92 is formed on the back surface 302 of the control lead 30.
  • a plating layer 93 is formed on the back surface 402 of the drive lead 40.
  • the plating layers 91, 92, and 93 are substantially made of Sn. Solder adheres to these plating layers 91, 92, and 93 when the semiconductor device A1 is mounted on a circuit board. Therefore, the mounting strength of the semiconductor device A1 on the circuit board can be increased.
  • the semiconductor device A1 of the above embodiment can be changed as follows, for example.
  • the above embodiment and each of the following modifications can be combined with each other as long as there is no technical contradiction.
  • the parts common to the above-described embodiment are designated by the same reference numerals as those in the above-described embodiment, and the description thereof will be omitted.
  • the number of drive wires 72 may be one or three or more depending on the amount of current required for the semiconductor device A1. -The wire diameter of the control wire 71 and the wire diameter of the drive wire 72 may be different from each other.
  • the semiconductor device A2 has a semiconductor element 50a.
  • the semiconductor element 50a of this modification is a diode.
  • the semiconductor element 50a has a main surface electrode 51 and a back surface electrode 54.
  • the main surface electrode 51 is, for example, an anode electrode
  • the back surface electrode 54 is, for example, a cathode electrode.
  • the main surface electrode 51 may be used as the cathode electrode
  • the back surface electrode 54 may be used as the anode electrode.
  • the semiconductor device A2 includes one second lead 20.
  • the main surface electrode 51 of the semiconductor element 50 is connected to the second lead 20 by a plurality of wires 70. Also in this semiconductor device A2, the same effect as that of the above-described embodiment can be obtained.
  • the semiconductor element may be an LSI.
  • the number of the second leads 20 can be changed due to fear of the plurality of electrodes provided in the LSI.
  • A1, A2 Semiconductor device 10 1st lead 101 Main surface 102 Back surface 103 Back surface recess 11 Terminal part 111 Terminal end surface (1st exposed surface) 112 Terminal back surface 12 Connecting part 121 Connecting end surface (first exposed surface) 13 Die bonding part 132 Die bonding back surface 14 Base material (first base material) 15 Plating layer (1st plating layer) 151 plating layer (Ni plating layer) 152 Plating layer (Pd plating layer) 153 Plating layer (Au plating layer) 20 2nd lead 30 Control lead 301 Main surface (2nd main surface) 302 back side (second back side) 303 Backside recess 31 Terminal part 311 Terminal end face (second exposed surface) 312 Terminal back surface 32 Connecting part 321 Connecting end surface (second exposed surface) 34 Base material (second base material) 35 Plating layer (second plating layer) 351 plating layer (Ni plating layer) 352 plating layer (Pd plating layer) 353 Plating layer (Au plating layer) 40

Abstract

A semiconductor device includes a first lead, a second lead, a semiconductor element, a bonding material, a wire, and a sealing resin. The first lead has a first main surface and a first reverse surface. The second lead has a second main surface and a second reverse surface. The semiconductor element is mounted on the first main surface and has a main surface electrode. The bonding material bonds the semiconductor element to the first lead. The wire electrically connects the main surface electrode and the second main surface. The wire contains Al. The second lead contains Cu, and has a second base material and a second plating layer covering the upper surface of the second base material. The second plating layer contains an Ni plating layer laminated on the upper surface of the second base material, a Pd plating layer laminated on the Ni plating layer, and an Au plating layer laminated on the Pd plating layer.

Description

半導体装置Semiconductor device
　本開示は、半導体装置に関するものである。 This disclosure relates to semiconductor devices.
　トランジスタに代表される半導体素子を備えた半導体装置は、様々な構成が提案されている。特許文献１には、従来の半導体装置の一例が開示されている。この半導体装置は、半導体素子、リードフレーム、複数のワイヤおよび封止樹脂を備える。リードフレームは、たとえば銅からなる。リードフレームは、ダイパッド部および複数のリード部を有する。ダイパッド部は、半導体素子を支持する。複数のリード部はそれぞれ、ワイヤを介して半導体素子と電気的に接続されている。封止樹脂は、半導体素子を覆う。 Various configurations have been proposed for semiconductor devices equipped with semiconductor elements represented by transistors. Patent Document 1 discloses an example of a conventional semiconductor device. This semiconductor device includes a semiconductor element, a lead frame, a plurality of wires, and a sealing resin. The lead frame is made of, for example, copper. The lead frame has a die pad portion and a plurality of lead portions. The die pad portion supports the semiconductor element. Each of the plurality of lead portions is electrically connected to the semiconductor element via a wire. The sealing resin covers the semiconductor element.
特開２０１６－１８８４６号公報Japanese Unexamined Patent Publication No. 2016-18846
　半導体素子とリードフレームとを接続するワイヤは、例えば、金（Ａｕ）、銅（Ｃｕ）、アルミニウム（Ａｌ）からなる。Ａｕからなるワイヤは、高価であるため、ワイヤの本数が多い半導体装置では、コストの点に考慮の余地がある。Ｃｕからなるワイヤは、硬いため、ボンディングの際に半導体素子に対してダメージを与えないように処理を行う点で考慮の余地がある。Ａｌからなるワイヤは、軟らかく、低コストであるため、ＡｕやＣｕからなるワイヤと比べ利点がある。 The wire connecting the semiconductor element and the lead frame is made of, for example, gold (Au), copper (Cu), and aluminum (Al). Since the wire made of Au is expensive, there is room for consideration in terms of cost in a semiconductor device having a large number of wires. Since the wire made of Cu is hard, there is room for consideration in that the processing is performed so as not to damage the semiconductor element at the time of bonding. Since the wire made of Al is soft and low in cost, it has an advantage over the wire made of Au or Cu.
　しかしながら、リードフレームがＣｕからなるため、ＡｌからなるワイヤをＣｕのリードフレームに直接接合した場合、ワイヤとリードフレームとの間に金属化合物を生成する。そして、半導体装置の動作等による熱によって金属間化合物の成長が進み、信頼性が低下するおそれがある。 However, since the lead frame is made of Cu, when a wire made of Al is directly bonded to the lead frame of Cu, a metal compound is generated between the wire and the lead frame. Then, the intermetallic compound may grow due to heat generated by the operation of the semiconductor device, resulting in a decrease in reliability.
　本開示の目的は、アルミニウムからなるワイヤを用いるとともに信頼性の低下を抑制可能とした半導体装置を提供することにある。 An object of the present disclosure is to provide a semiconductor device that uses a wire made of aluminum and can suppress a decrease in reliability.
　本開示の一態様である半導体装置は、第１主面と、前記第１主面と反対方向を向く第１裏面とを有する第１リードと、前記第１リードに対して前記第１主面と平行な第１方向に前記第１リードから離れて配置され、前記第１主面と同じ方向を向く第２主面と、前記第２主面と反対方向を向く第２裏面とを有する第２リードと、前記第１主面に実装され、前記第１主面と同じ方向を向く主面電極を有する半導体素子と、前記半導体素子を前記第１リードに接合する接合材と、前記主面電極と前記第２主面とを電気的に接続するワイヤと、前記半導体素子及び前記ワイヤを封止する封止樹脂と、を備え、前記ワイヤはＡｌを含み、前記第２リードは、Ｃｕを含み、前記第１主面と同じ方向を向く上面を有する第２母材と、前記第２母材の上面を覆い、前記第２主面を表面とする第２めっき層と、を有し、前記第２めっき層は、前記第２母材の前記上面に積層されたＮｉめっき層と、前記Ｎｉめっき層に積層されたＰｄめっき層と、前記Ｐｄめっき層に積層されたＡｕめっき層とを含む。 The semiconductor device according to one aspect of the present disclosure includes a first lead having a first main surface and a first back surface facing the direction opposite to the first main surface, and the first main surface with respect to the first lead. A second surface that is arranged away from the first lead in a first direction parallel to and has a second main surface facing the same direction as the first main surface and a second back surface facing the opposite direction to the second main surface. A semiconductor element having two leads, a semiconductor element mounted on the first main surface and having a main surface electrode facing the same direction as the first main surface, a bonding material for joining the semiconductor element to the first main surface, and the main surface. A wire for electrically connecting the electrode and the second main surface, a semiconductor element, and a sealing resin for sealing the wire are provided, the wire contains Al, and the second lead contains Cu. It has a second base material having an upper surface facing the same direction as the first main surface, and a second plating layer covering the upper surface of the second base material and having the second main surface as a surface. The second plating layer includes a Ni plating layer laminated on the upper surface of the second base material, a Pd plating layer laminated on the Ni plating layer, and an Au plating layer laminated on the Pd plating layer. include.
　この構成によれば、Ａｌよりなるワイヤを用いることで、半導体素子に対する影響を低減でき、信頼性の低下を抑制できる。また、ワイヤを接続する第２リードは、Ｃｕよりなる第２母材と、第２母材の表面の第２めっき層とを含む。第２めっき層は、Ｎｉめっき層とＰｄめっき層とＡｕめっき層とを含む。これにより、ワイヤが第２リードから離れることを抑制でき、信頼性の低下を抑制できる。 According to this configuration, by using a wire made of Al, the influence on the semiconductor element can be reduced and the decrease in reliability can be suppressed. Further, the second lead connecting the wires includes a second base material made of Cu and a second plating layer on the surface of the second base material. The second plating layer includes a Ni plating layer, a Pd plating layer, and an Au plating layer. As a result, it is possible to prevent the wire from separating from the second lead, and it is possible to suppress a decrease in reliability.
　本開示の一態様によれば、アルミニウムからなるワイヤを用いるとともに信頼性の低下を抑制可能とした半導体装置を提供できる。 According to one aspect of the present disclosure, it is possible to provide a semiconductor device that uses a wire made of aluminum and can suppress a decrease in reliability.
一実施形態の半導体装置を上面側から視た概略斜視図。A schematic perspective view of the semiconductor device of one embodiment as viewed from the top surface side. 一実施形態の半導体装置を下面側から視た概略斜視図。A schematic perspective view of the semiconductor device of one embodiment as viewed from the lower surface side. 一実施形態の半導体装置の概略上面図。The schematic top view of the semiconductor device of one embodiment. 一実施形態の半導体装置の概略下面図。The schematic bottom view of the semiconductor device of one embodiment. 一実施形態の半導体装置の概略正面図。The schematic front view of the semiconductor device of one Embodiment. 一実施形態の半導体装置の概略側面図。The schematic side view of the semiconductor device of one Embodiment. 図３の７－７線断面図。FIG. 7-7 is a cross-sectional view taken along the line 7-7 of FIG. 図３の８－８線断面図。FIG. 8-8 is a cross-sectional view taken along the line 8-8 of FIG. 第２リード（制御リード）の拡大断面図。An enlarged cross-sectional view of the second lead (control lead). 第２リード（駆動リード）の拡大断面図。An enlarged cross-sectional view of the second lead (drive lead). 第１リードの一部拡大断面図。Partially enlarged cross-sectional view of the first lead. 半導体装置を製造するためのリードフレームの説明図。Explanatory drawing of a lead frame for manufacturing a semiconductor device. 変更例の半導体装置の概略上面図。Schematic top view of the semiconductor device of the modified example.
　以下、各形態を説明する。
　なお、添付図面は、理解を容易にするために構成要素を拡大して示している場合がある。構成要素の寸法比率は実際のものと、または別の図面中のものと異なる場合がある。また、断面図では、理解を容易にするために、一部の構成要素のハッチングを省略している場合がある。 Hereinafter, each form will be described.
In the attached drawings, the components may be enlarged for easy understanding. The dimensional ratios of the components may differ from the actual ones or those in another drawing. Further, in the cross-sectional view, hatching of some components may be omitted for easy understanding.
　本明細書において、「部材Ａが部材Ｂと接続された状態」とは、部材Ａと部材Ｂとが物理的に直接的に接続される場合、ならびに、部材Ａおよび部材Ｂが、電気的な接続状態に影響を及ぼさない他の部材を介して間接的に接続される場合を含む。 In the present specification, the "state in which the member A is connected to the member B" means that the member A and the member B are physically directly connected, and that the member A and the member B are electrically connected. This includes the case of being indirectly connected via another member that does not affect the connection state.
　図１～図１２を参照して、一実施形態の半導体装置を説明する。なお、
　図１，図２に示すように、半導体装置Ａ１は、例えば直方体状である。本実施形態において、半導体装置Ａ１の厚さ方向をＺ方向とし、Ｚ方向と直交する方向をＸ方向（第２方向）、Ｚ方向及びＸ方向と直交する方向をＹ方向（第１方向）とする。また、本実施形態において、平面視は、対象物をＺ方向から視ることをいう。 The semiconductor device of one embodiment will be described with reference to FIGS. 1 to 12. note that,
As shown in FIGS. 1 and 2, the semiconductor device A1 has, for example, a rectangular parallelepiped shape. In the present embodiment, the thickness direction of the semiconductor device A1 is the Z direction, the direction orthogonal to the Z direction is the X direction (second direction), and the Z direction and the direction orthogonal to the X direction are the Y direction (first direction). do. Further, in the present embodiment, the plan view means viewing the object from the Z direction.
　図１～図６に示すように、半導体装置Ａ１は、第１リード１０、第２リード２０、半導体素子５０、接合材６０、ワイヤ７０、封止樹脂８０、端子めっき層９０を備えている。なお、図３～図６では、便宜上、封止樹脂８０を二点鎖線にて示し、封止樹脂８０内の部材を実線で示している。また、図４では、端子めっき層９０（めっき層９１～９３）を省略している。 As shown in FIGS. 1 to 6, the semiconductor device A1 includes a first lead 10, a second lead 20, a semiconductor element 50, a bonding material 60, a wire 70, a sealing resin 80, and a terminal plating layer 90. In FIGS. 3 to 6, for convenience, the sealing resin 80 is shown by a chain double-dashed line, and the members in the sealing resin 80 are shown by a solid line. Further, in FIG. 4, the terminal plating layer 90 (plating layers 91 to 93) is omitted.
　第１リード１０と第２リード２０は、Ｙ方向に並べられている。第２リード２０は、Ｘ方向に並べられた制御リード３０と駆動リード４０とを含む。
　［第１リード］
　第１リード１０は、主面１０１、裏面１０２、裏面凹部１０３を有する。主面１０１と裏面１０２は、Ｚ方向において互いに反対方向を向く。裏面凹部１０３は、第１リード１０の一部が裏面１０２からＺ方向に凹んだ部分である。 The first lead 10 and the second lead 20 are arranged in the Y direction. The second lead 20 includes a control lead 30 and a drive lead 40 arranged in the X direction.
[1st lead]
The first lead 10 has a main surface 101, a back surface 102, and a back surface recess 103. The main surface 101 and the back surface 102 face in opposite directions in the Z direction. The back surface recess 103 is a portion of the first lead 10 that is recessed in the Z direction from the back surface 102.
　第１リード１０は、端子部１１、連結部１２、ダイボンディング部１３を有する。
　端子部１１は、平面視において、裏面凹部１０３を避けた位置に設けられている。端子部１１は、平面視矩形状である。端子部１１は、端子端面１１１、端子裏面１１２を有する。端子端面１１１は、Ｘ方向を向き、封止樹脂８０から露出している。端子裏面１１２は、裏面１０２の一部である。端子裏面１１２は、封止樹脂８０から露出している。 The first lead 10 has a terminal portion 11, a connecting portion 12, and a die bonding portion 13.
The terminal portion 11 is provided at a position avoiding the back surface recess 103 in a plan view. The terminal portion 11 has a rectangular shape in a plan view. The terminal portion 11 has a terminal end surface 111 and a terminal back surface 112. The terminal end face 111 faces the X direction and is exposed from the sealing resin 80. The terminal back surface 112 is a part of the back surface 102. The terminal back surface 112 is exposed from the sealing resin 80.
　連結部１２は、平面視において裏面凹部１０３に含まれる部位である。連結部１２は、連結端面１２１を有する。連結端面１２１は、Ｙ方向を向き、封止樹脂８０から露出している。 The connecting portion 12 is a portion included in the back surface recess 103 in a plan view. The connecting portion 12 has a connecting end face 121. The connecting end face 121 faces in the Y direction and is exposed from the sealing resin 80.
　ダイボンディング部１３は、平面視において裏面凹部１０３に囲まれた部位である。本実施形態において、ダイボンディング部１３は、平面視矩形状である。ダイボンディング部１３は、ダイボンディング裏面１３２を有する。ダイボンディング裏面１３２は、第１リード１０の裏面１０２の一部である。ダイボンディング裏面１３２は、封止樹脂８０から露出している。 The die bonding portion 13 is a portion surrounded by the back surface recess 103 in a plan view. In the present embodiment, the die bonding portion 13 has a rectangular shape in a plan view. The die bonding portion 13 has a die bonding back surface 132. The die bonding back surface 132 is a part of the back surface 102 of the first lead 10. The die bonding back surface 132 is exposed from the sealing resin 80.
　第１リード１０のうち、封止樹脂８０から露出する面である端子端面１１１及び連結端面１２１を除く部分に、めっき層１５が形成されている。本実施形態において、第１リード１０は、母材１４とめっき層１５とを備えている。母材１４は、実質的にＣｕ（銅）よりなる。なお、本実施形態において、実質的にＣｕよりなるとは、Ｃｕ、又はＣｕを主成分とする合金により形成されていることを意図している。母材１４は約９５％以上のＣｕを含む。好ましくは、母材１４は約９８％以上のＣｕを含む。より好ましくは、母材１４は約９９％以上のＣｕを含む。母材１４は約５％未満の不純物を含んでいてもよい。母材１４は、例えば圧延によって形成された金属板を用いて形成される。母材１４は、金属板をエッチング加工したエッチングフレームをめっき加工し、その後切断加工して得られる。したがって、端子端面１１１及び連結端面１２１において、母材１４が露出している。 A plating layer 15 is formed on a portion of the first lead 10 other than the terminal end face 111 and the connecting end face 121, which are surfaces exposed from the sealing resin 80. In the present embodiment, the first lead 10 includes a base material 14 and a plating layer 15. The base material 14 is substantially made of Cu (copper). In the present embodiment, substantially made of Cu means that it is formed of Cu or an alloy containing Cu as a main component. The base material 14 contains about 95% or more of Cu. Preferably, the base metal 14 contains about 98% or more Cu. More preferably, the base metal 14 contains about 99% or more of Cu. The base material 14 may contain impurities of less than about 5%. The base metal 14 is formed by using, for example, a metal plate formed by rolling. The base material 14 is obtained by plating an etching frame obtained by etching a metal plate and then cutting the metal plate. Therefore, the base material 14 is exposed on the terminal end face 111 and the connecting end face 121.
　図１１に示すように、本実施形態のめっき層１５は、３つのめっき層１５１，１５２，１５３から構成されている。めっき層１５１は、実質的にＮｉ（ニッケル）よりなる。実質的にＮｉよりなるとは、Ｎｉ、又はＮｉを主成分とする合金により形成されていることを意図している。めっき層１５１は約９５％以上のＮｉを含む。好ましくは、めっき層１５１は約９８％以上のＮｉを含む。より好ましくは、めっき層１５１は約９９％以上のＮｉを含む。めっき層１５１は約５％未満の不純物を含んでいてもよい。めっき層１５２は、実質的にＰｄ（パラジウム）よりなる。実質的にＰｄよりなるとは、Ｐｄ、又はＰｄを主成分とする合金により形成されていることを意図している。めっき層１５２は約９５％以上のＰｂを含む。好ましくは、めっき層１５２は約９８％以上のＰｂを含む。より好ましくは、めっき層１５２は約９９％以上のＰｂを含む。めっき層１５２は約５％未満の不純物を含んでいてもよい。めっき層１５３は、実質的にＡｕ（金）よりなる。実質的にＡｕよりなるとは、Ａｕ、又はＡｕを主成分とする合金により形成されていることを意図している。めっき層１５３は約９５％以上のＡｕを含む。好ましくは、めっき層１５３は約９８％以上のＡｕを含む。より好ましくは、めっき層１５３は約９９％以上のＡｕを含む。めっき層１５３は約５％未満の不純物を含んでいてもよい。以下、めっき層１５１，１５２，１５３をＮｉめっき層１５１，Ｐｄめっき層１５２、Ａｕめっき層１５３ということがある。 As shown in FIG. 11, the plating layer 15 of the present embodiment is composed of three plating layers 151, 152, and 153. The plating layer 151 is substantially made of Ni (nickel). Substantially composed of Ni is intended to be formed of Ni or an alloy containing Ni as a main component. The plating layer 151 contains about 95% or more of Ni. Preferably, the plating layer 151 contains about 98% or more Ni. More preferably, the plating layer 151 contains about 99% or more of Ni. The plating layer 151 may contain impurities of less than about 5%. The plating layer 152 is substantially made of Pd (palladium). By substantially consisting of Pd, it is intended that it is formed of Pd or an alloy containing Pd as a main component. The plating layer 152 contains about 95% or more of Pb. Preferably, the plating layer 152 contains about 98% or more of Pb. More preferably, the plating layer 152 contains about 99% or more of Pb. The plating layer 152 may contain impurities of less than about 5%. The plating layer 153 is substantially made of Au (gold). Substantially composed of Au is intended to be formed of Au or an alloy containing Au as a main component. The plating layer 153 contains about 95% or more Au. Preferably, the plating layer 153 contains about 98% or more Au. More preferably, the plating layer 153 contains about 99% or more Au. The plating layer 153 may contain impurities of less than about 5%. Hereinafter, the plating layers 151, 152, and 153 may be referred to as a Ni plating layer 151, a Pd plating layer 152, and an Au plating layer 153.
　Ｎｉめっき層１５１とＰｄめっき層１５２とＡｕめっき層１５３は、母材１４の表面から、この順番で積層されている。つまり、母材１４の表面にＮｉめっき層１５１が積層され、Ｎｉめっき層１５１の表面にＰｄめっき層１５２が積層され、Ｐｄめっき層１５２の表面にＡｕめっき層１５３が積層されている。Ｎｉめっき層１５１とＰｄめっき層１５２とＡｕめっき層１５３は、例えば電解めっき法により形成される。 The Ni plating layer 151, the Pd plating layer 152, and the Au plating layer 153 are laminated in this order from the surface of the base metal 14. That is, the Ni plating layer 151 is laminated on the surface of the base material 14, the Pd plating layer 152 is laminated on the surface of the Ni plating layer 151, and the Au plating layer 153 is laminated on the surface of the Pd plating layer 152. The Ni plating layer 151, the Pd plating layer 152, and the Au plating layer 153 are formed by, for example, an electrolytic plating method.
　［第２リード（制御リード）］
　制御リード３０は、主面３０１、裏面３０２、裏面凹部３０３を有する。
　主面３０１及び裏面３０２は、Ｚ方向において互いに反対方向を向く。裏面凹部３０３は、制御リード３０の一部が裏面３０２からＺ方向に凹んだ部分である。 [Second lead (control lead)]
The control lead 30 has a main surface 301, a back surface 302, and a back surface recess 303.
The main surface 301 and the back surface 302 face in opposite directions in the Z direction. The back surface recess 303 is a portion of the control lead 30 recessed in the Z direction from the back surface 302.
　制御リード３０は、端子部３１及び連結部３２を有する。
　端子部３１は、平面視において、裏面凹部３０３を避けた位置に設けられている。端子部３１は、平面視矩形状である。端子部３１は、端子端面３１１及び端子裏面３１２を有する。端子端面３１１は、Ｘ方向を向き、封止樹脂８０から露出している。端子裏面３１２は、裏面３０２の一部である。端子裏面３１２は、封止樹脂８０から露出している。 The control lead 30 has a terminal portion 31 and a connecting portion 32.
The terminal portion 31 is provided at a position avoiding the back surface recess 303 in a plan view. The terminal portion 31 has a rectangular shape in a plan view. The terminal portion 31 has a terminal end surface 311 and a terminal back surface 312. The terminal end surface 311 faces the X direction and is exposed from the sealing resin 80. The terminal back surface 312 is a part of the back surface 302. The terminal back surface 312 is exposed from the sealing resin 80.
　連結部３２は、平面視において裏面凹部３０３に含まれる部位である。連結部３２は、連結端面３２１を有する。連結端面３２１は、Ｙ方向を向き、封止樹脂８０から露出している。 The connecting portion 32 is a portion included in the back surface recess 303 in a plan view. The connecting portion 32 has a connecting end face 321. The connecting end face 321 faces the Y direction and is exposed from the sealing resin 80.
　制御リード３０のうち、封止樹脂８０から露出する面である端子端面３１１及び連結端面３２１を除く部分に、めっき層３５が形成されている。本実施形態において、制御リード３０は、母材３４とめっき層３５とを備えている。母材３４は、実質的にＣｕ（銅）よりなる。なお、本実施形態において、実質的にＣｕよりなるとは、Ｃｕ、又はＣｕを主成分とする合金により形成されていることを意図している。母材３４は約９５％以上のＣｕを含む。好ましくは、母材３４は約９８％以上のＣｕを含む。より好ましくは、母材３４は約９９％以上のＣｕを含む。母材３４は約５％未満の不純物を含んでいてもよい。母材３４は、例えば圧延によって形成された金属板を用いて形成される。母材３４は、金属板をエッチング加工したエッチングフレームをめっき加工し、その後切断加工して得られる。したがって、端子端面３１１及び連結端面３２１において、母材３４が露出している。 A plating layer 35 is formed on a portion of the control lead 30 excluding the terminal end surface 311 and the connecting end surface 321 which are the surfaces exposed from the sealing resin 80. In the present embodiment, the control lead 30 includes a base material 34 and a plating layer 35. The base material 34 is substantially made of Cu (copper). In the present embodiment, substantially made of Cu means that it is formed of Cu or an alloy containing Cu as a main component. The base material 34 contains about 95% or more of Cu. Preferably, the base metal 34 contains about 98% or more Cu. More preferably, the base metal 34 contains about 99% or more of Cu. The base metal 34 may contain less than about 5% impurities. The base metal 34 is formed by using, for example, a metal plate formed by rolling. The base material 34 is obtained by plating an etching frame obtained by etching a metal plate and then cutting the metal plate. Therefore, the base material 34 is exposed on the terminal end face 311 and the connecting end face 321.
　図９に示すように、本実施形態のめっき層３５は、３つのめっき層３５１，３５２，３５３から構成されている。めっき層３５１は、実質的にＮｉ（ニッケル）よりなる。実質的にＮｉよりなるとは、Ｎｉ、又はＮｉを主成分とする合金により形成されていることを意図している。めっき層３５１は約９５％以上のＮｉを含む。好ましくは、めっき層３５１は約９８％以上のＮｉを含む。より好ましくは、めっき層３５１は約９９％以上のＮｉを含む。めっき層３５１は約５％未満の不純物を含んでいてもよい。めっき層３５２は、実質的にＰｄ（パラジウム）よりなる。実質的にＰｄよりなるとは、Ｐｄ、又はＰｄを主成分とする合金により形成されていることを意図している。めっき層３５２は約９５％以上のＰｂを含む。好ましくは、めっき層３５２は約９８％以上のＰｂを含む。より好ましくは、めっき層３５２は約９９％以上のＰｂを含む。めっき層３５２は約５％未満の不純物を含んでいてもよい。めっき層３５３は、実質的にＡｕ（金）よりなる。実質的にＡｕよりなるとは、Ａｕ、又はＡｕを主成分とする合金により形成されていることを意図している。めっき層３５３は約９５％以上のＡｕを含む。好ましくは、めっき層３５３は約９８％以上のＡｕを含む。より好ましくは、めっき層３５３は約９９％以上のＡｕを含む。めっき層３５３は約５％未満の不純物を含んでいてもよい。以下、めっき層３５１，３５２，３５３をＮｉめっき層３５１，Ｐｄめっき層３５２、Ａｕめっき層３５３ということがある。 As shown in FIG. 9, the plating layer 35 of the present embodiment is composed of three plating layers 351,352,353. The plating layer 351 is substantially made of Ni (nickel). Substantially composed of Ni is intended to be formed of Ni or an alloy containing Ni as a main component. The plating layer 351 contains about 95% or more of Ni. Preferably, the plating layer 351 contains about 98% or more Ni. More preferably, the plating layer 351 contains about 99% or more of Ni. The plating layer 351 may contain impurities of less than about 5%. The plating layer 352 is substantially made of Pd (palladium). By substantially consisting of Pd, it is intended that it is formed of Pd or an alloy containing Pd as a main component. The plating layer 352 contains about 95% or more of Pb. Preferably, the plating layer 352 contains about 98% or more of Pb. More preferably, the plating layer 352 contains about 99% or more of Pb. The plating layer 352 may contain impurities of less than about 5%. The plating layer 353 is substantially made of Au (gold). Substantially composed of Au is intended to be formed of Au or an alloy containing Au as a main component. The plating layer 353 contains about 95% or more Au. Preferably, the plating layer 353 contains about 98% or more Au. More preferably, the plating layer 353 contains about 99% or more Au. The plating layer 353 may contain impurities of less than about 5%. Hereinafter, the plating layers 351 and 352 and 353 may be referred to as Ni plating layer 351 and Pd plating layer 352 and Au plating layer 353.
　Ｎｉめっき層３５１とＰｄめっき層３５２とＡｕめっき層３５３は、母材３４の表面から、この順番で積層されている。つまり、母材３４の表面にＮｉめっき層３５１が積層され、Ｎｉめっき層３５１の表面にＰｄめっき層３５２が積層され、Ｐｄめっき層３５２の表面にＡｕめっき層３５３が積層されている。Ｎｉめっき層３５１とＰｄめっき層３５２とＡｕめっき層３５３は、例えば電解めっき法により形成される。 The Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 are laminated in this order from the surface of the base metal 34. That is, the Ni plating layer 351 is laminated on the surface of the base material 34, the Pd plating layer 352 is laminated on the surface of the Ni plating layer 351 and the Au plating layer 353 is laminated on the surface of the Pd plating layer 352. The Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 are formed by, for example, an electrolytic plating method.
　［第２リード（駆動リード）］
　駆動リード４０は、主面４０１、裏面４０２、裏面凹部４０３を有する。主面４０１及び裏面４０２は、Ｚ方向において互いに反対方向を向く。裏面凹部４０３は、駆動リード４０の一部が裏面４０２からＺ方向に凹んだ部分である。駆動リード４０の主面４０１と制御リード３０の主面３０１は、第２リード２０の主面（第２主面）を構成する。駆動リード４０の裏面４０２と制御リード３０の裏面３０２は、第２リード２０の裏面（第２裏面）を構成する。 [Second lead (drive lead)]
The drive lead 40 has a main surface 401, a back surface 402, and a back surface recess 403. The main surface 401 and the back surface 402 face in opposite directions in the Z direction. The back surface recess 403 is a portion of the drive lead 40 recessed in the Z direction from the back surface 402. The main surface 401 of the drive lead 40 and the main surface 301 of the control lead 30 form the main surface (second main surface) of the second lead 20. The back surface 402 of the drive lead 40 and the back surface 302 of the control lead 30 form the back surface (second back surface) of the second lead 20.
　駆動リード４０は、端子部４１、連結部４２、ワイヤボンディング部４３を有する。
　端子部４１は、平面視において、裏面凹部４０３を避けた位置に設けられている。端子部４１は、平面視矩形状である。端子部４１は、端子端面４１１及び端子裏面４１２を有する。端子端面４１１は、Ｘ方向を向き、封止樹脂８０から露出している。端子裏面４１２は、裏面４０２の一部である。端子裏面４１２は、封止樹脂８０から露出している。 The drive lead 40 has a terminal portion 41, a connecting portion 42, and a wire bonding portion 43.
The terminal portion 41 is provided at a position avoiding the back surface recess 403 in a plan view. The terminal portion 41 has a rectangular shape in a plan view. The terminal portion 41 has a terminal end surface 411 and a terminal back surface 412. The terminal end surface 411 faces the X direction and is exposed from the sealing resin 80. The terminal back surface 412 is a part of the back surface 402. The terminal back surface 412 is exposed from the sealing resin 80.
　連結部４２は、平面視において裏面凹部４０３に含まれる部位である。連結部４２は、連結端面４２１を有する。連結端面４２１は、Ｙ方向を向き、封止樹脂８０から露出している。 The connecting portion 42 is a portion included in the back surface recess 403 in a plan view. The connecting portion 42 has a connecting end face 421. The connecting end face 421 faces in the Y direction and is exposed from the sealing resin 80.
　ワイヤボンディング部４３は、平面視において裏面凹部に囲まれた部位である。本実施形態において、ワイヤボンディング部４３は、平面視矩形状である。ワイヤボンディング部４３は、ワイヤボンディング裏面４３２を有する。ワイヤボンディング裏面４３２は、裏面４０２の一部である。ワイヤボンディング裏面４３２は、封止樹脂８０から露出している。 The wire bonding portion 43 is a portion surrounded by a recess on the back surface in a plan view. In the present embodiment, the wire bonding portion 43 has a rectangular shape in a plan view. The wire bonding portion 43 has a wire bonding back surface 432. The wire bonding back surface 432 is a part of the back surface 402. The wire bonding back surface 432 is exposed from the sealing resin 80.
　駆動リード４０のうち、封止樹脂８０から露出する面である端子端面４１１及び連結端面４２１を除く部分に、めっき層４５が形成されている。本実施形態において、駆動リード４０は、母材４４とめっき層４５とを備えている。母材４４は、実質的にＣｕ（銅）よりなる。なお、本実施形態において、実質的にＣｕよりなるとは、Ｃｕ、又はＣｕを主成分とする合金により形成されていることを意図している。母材４４は約９５％以上のＣｕを含む。好ましくは、母材４４は約９８％以上のＣｕを含む。より好ましくは、母材４４は約９９％以上のＣｕを含む。母材４４は約５％未満の不純物を含んでいてもよい。母材４４は、例えば圧延によって形成された金属板を用いて形成される。母材４４は、金属板をエッチング加工したエッチングフレームをめっき加工し、その後切断加工して得られる。したがって、端子端面４１１及び連結端面４２１において、母材４４が露出している。 A plating layer 45 is formed on a portion of the drive lead 40 excluding the terminal end surface 411 and the connecting end surface 421, which are surfaces exposed from the sealing resin 80. In the present embodiment, the drive lead 40 includes a base material 44 and a plating layer 45. The base material 44 is substantially made of Cu (copper). In the present embodiment, substantially made of Cu means that it is formed of Cu or an alloy containing Cu as a main component. The base material 44 contains about 95% or more of Cu. Preferably, the base metal 44 contains about 98% or more Cu. More preferably, the base metal 44 contains about 99% or more of Cu. The base metal 44 may contain less than about 5% impurities. The base metal 44 is formed by using, for example, a metal plate formed by rolling. The base metal 44 is obtained by plating an etching frame obtained by etching a metal plate and then cutting the metal plate. Therefore, the base material 44 is exposed on the terminal end face 411 and the connecting end face 421.
　図１０に示すように、本実施形態のめっき層４５は、３つのめっき層４５１，４５２，４５３から構成されている。めっき層４５１は、実質的にＮｉ（ニッケル）よりなる。実質的にＮｉよりなるとは、Ｎｉ、又はＮｉを主成分とする合金により形成されていることを意図している。めっき層４５１は約９５％以上のＮｉを含む。好ましくは、めっき層４５１は約９８％以上のＮｉを含む。より好ましくは、めっき層４５１は約９９％以上のＮｉを含む。めっき層４５１は約５％未満の不純物を含んでいてもよい。めっき層４５２は、実質的にＰｄ（パラジウム）よりなる。実質的にＰｄよりなるとは、Ｐｄ、又はＰｄを主成分とする合金により形成されていることを意図している。めっき層４５２は約９５％以上のＰｂを含む。好ましくは、めっき層４５２は約９８％以上のＰｂを含む。より好ましくは、めっき層４５２は約９９％以上のＰｂを含む。めっき層４５２は約５％未満の不純物を含んでいてもよい。めっき層４５３は、実質的にＡｕ（金）よりなる。実質的にＡｕよりなるとは、Ａｕ、又はＡｕを主成分とする合金により形成されていることを意図している。めっき層４５３は約９５％以上のＡｕを含む。好ましくは、めっき層４５３は約９８％以上のＡｕを含む。より好ましくは、めっき層４５３は約９９％以上のＡｕを含む。めっき層４５３は約５％未満の不純物を含んでいてもよい。以下、めっき層４５１，４５２，４５３をＮｉめっき層４５１，Ｐｄめっき層４５２、Ａｕめっき層４５３ということがある。 As shown in FIG. 10, the plating layer 45 of the present embodiment is composed of three plating layers 451, 452, 453. The plating layer 451 is substantially made of Ni (nickel). Substantially composed of Ni is intended to be formed of Ni or an alloy containing Ni as a main component. The plating layer 451 contains about 95% or more of Ni. Preferably, the plating layer 451 contains about 98% or more Ni. More preferably, the plating layer 451 contains about 99% or more of Ni. The plating layer 451 may contain less than about 5% impurities. The plating layer 452 is substantially made of Pd (palladium). By substantially consisting of Pd, it is intended that it is formed of Pd or an alloy containing Pd as a main component. The plating layer 452 contains about 95% or more of Pb. Preferably, the plating layer 452 contains about 98% or more of Pb. More preferably, the plating layer 452 contains about 99% or more of Pb. The plating layer 452 may contain less than about 5% impurities. The plating layer 453 is substantially made of Au (gold). Substantially composed of Au is intended to be formed of Au or an alloy containing Au as a main component. The plating layer 453 contains about 95% or more Au. Preferably, the plating layer 453 contains about 98% or more Au. More preferably, the plating layer 453 contains about 99% or more Au. The plating layer 453 may contain impurities of less than about 5%. Hereinafter, the plating layers 451 and 452 and 453 may be referred to as a Ni plating layer 451 and a Pd plating layer 452 and an Au plating layer 453.
　Ｎｉめっき層４５１とＰｄめっき層４５２とＡｕめっき層４５３は、母材４４の表面から、この順番で積層されている。つまり、母材４４の表面にＮｉめっき層４５１が積層され、Ｎｉめっき層４５１の表面にＰｄめっき層４５２が積層され、Ｐｄめっき層４５２の表面にＡｕめっき層４５３が積層されている。Ｎｉめっき層４５１とＰｄめっき層４５２，とＡｕめっき層４５３は、例えば電解めっき法により形成される。 The Ni plating layer 451 and the Pd plating layer 452 and the Au plating layer 453 are laminated in this order from the surface of the base metal 44. That is, the Ni plating layer 451 is laminated on the surface of the base material 44, the Pd plating layer 452 is laminated on the surface of the Ni plating layer 451 and the Au plating layer 453 is laminated on the surface of the Pd plating layer 452. The Ni plating layer 451 and the Pd plating layer 452 and the Au plating layer 453 are formed by, for example, an electrolytic plating method.
　［半導体素子］
　半導体素子５０は、第１リード１０の主面１０１に搭載されている。半導体素子５０は、半導体装置Ａ１の電気的機能を発揮する部材である。半導体素子５０は、たとえばトランジスタであり、本実施形態ではＭＯＳＦＥＴ（metal-oxide-semiconductor field-effect transistor）が用いられている。ＭＯＳＦＥＴとしては、Ｓｉ（シリコン）やＳｉＣ（炭化シリコン）よりなるもの、ＧａＮ（窒化ガリウム）よりなるもの等であってもよい。なお、半導体素子５０は、ＭＯＳＦＥＴに代えて、ＩＧＢＴ（Insulated Gate Bipolar Transistor）や他のバイポーラトランジスタ等のトランジスタであってもよい。 [Semiconductor element]
The semiconductor element 50 is mounted on the main surface 101 of the first lead 10. The semiconductor element 50 is a member that exerts an electrical function of the semiconductor device A1. The semiconductor element 50 is, for example, a transistor, and in this embodiment, a MOSFET (metal-oxide-semiconductor field-effect transistor) is used. The MOSFET may be made of Si (silicon), SiC (silicon carbide), GaN (gallium nitride), or the like. The semiconductor element 50 may be a transistor such as an IGBT (Insulated Gate Bipolar Transistor) or another bipolar transistor instead of the MOSFET.
　半導体素子５０は、矩形平板状である。半導体素子５０は、素子主面５０１、素子裏面５０２を有する。素子主面５０１と素子裏面５０２は、Ｚ方向において互いに反対方向を向く。 The semiconductor element 50 has a rectangular flat plate shape. The semiconductor element 50 has an element main surface 501 and an element back surface 502. The element main surface 501 and the element back surface 502 face in opposite directions in the Z direction.
　半導体素子５０は、素子主面５０１に主面電極５１を有する。また、半導体素子５０は、素子裏面５０２に裏面電極５４を有する。主面電極５１は、制御電極５２と駆動電極５３とを有する。本実施形態において、制御電極５２は、ゲート電極を構成し、駆動電極５３はソース電極を構成し、裏面電極５４はドレイン電極を構成する。 The semiconductor element 50 has a main surface electrode 51 on the element main surface 501. Further, the semiconductor element 50 has a back surface electrode 54 on the back surface 502 of the device. The main surface electrode 51 has a control electrode 52 and a drive electrode 53. In the present embodiment, the control electrode 52 constitutes a gate electrode, the drive electrode 53 constitutes a source electrode, and the back surface electrode 54 constitutes a drain electrode.
　裏面電極５４は、接合材６０により第１リード１０の主面１０１に接合されている。接合材６０は、導電性を有し、裏面電極５４と第１リード１０とを電気的に接続する。接合材６０は、例えばＡｇ（銀）ペーストよりなる。Ａｇペーストは、Ａｇを含む樹脂材料（例えばエポキシ樹脂）を主材とした合成樹脂から構成されている。Ａｇペーストは約７５～９０％のＡｇを含む。好ましくは、Ａｇペーストは８０～９０％のＡｇを含む。より好ましくは、Ａｇペーストは８０～８５％のＡｇを含む。本実施形態において、裏面電極５４は、半導体素子５０のドレイン電極である。したがって、第１リード１０は、半導体装置Ａ１のドレイン端子である。 The back surface electrode 54 is bonded to the main surface 101 of the first lead 10 by the bonding material 60. The bonding material 60 has conductivity and electrically connects the back surface electrode 54 and the first lead 10. The bonding material 60 is made of, for example, Ag (silver) paste. The Ag paste is composed of a synthetic resin whose main material is a resin material containing Ag (for example, epoxy resin). The Ag paste contains about 75-90% Ag. Preferably, the Ag paste contains 80-90% Ag. More preferably, the Ag paste contains 80-85% Ag. In the present embodiment, the back surface electrode 54 is a drain electrode of the semiconductor element 50. Therefore, the first lead 10 is a drain terminal of the semiconductor device A1.
　［ワイヤ］
　ワイヤ７０は、制御ワイヤ７１と駆動ワイヤ７２とを有する。制御ワイヤ７１は、半導体素子５０の制御電極５２と、制御リード３０の端子部３１とに接続されている。つまり、端子部３１は、制御ワイヤ７１を接続するワイヤボンディング部としても機能する。制御ワイヤ７１は、例えば超音波接合により、制御電極５２と制御リード３０とに接合されている。 [Wire]
The wire 70 has a control wire 71 and a drive wire 72. The control wire 71 is connected to the control electrode 52 of the semiconductor element 50 and the terminal portion 31 of the control lead 30. That is, the terminal portion 31 also functions as a wire bonding portion for connecting the control wire 71. The control wire 71 is bonded to the control electrode 52 and the control lead 30 by, for example, ultrasonic bonding.
　駆動ワイヤ７２は、半導体素子５０の駆動電極５３と、駆動リード４０のワイヤボンディング部４３とに接続されている。駆動ワイヤ７２は、例えば超音波接合により、駆動電極５３と駆動リード４０とに接合されている。本実施形態において、半導体装置Ａ１は、２本の駆動ワイヤ７２を有する。駆動ワイヤ７２の本数は、半導体装置Ａ１において流す電流量に応じて設定される。 The drive wire 72 is connected to the drive electrode 53 of the semiconductor element 50 and the wire bonding portion 43 of the drive lead 40. The drive wire 72 is bonded to the drive electrode 53 and the drive lead 40 by, for example, ultrasonic bonding. In this embodiment, the semiconductor device A1 has two drive wires 72. The number of drive wires 72 is set according to the amount of current flowing through the semiconductor device A1.
　［封止樹脂］
　封止樹脂８０は、第１リード１０及び第２リード２０（制御リード３０、駆動リード４０）の一部と、半導体素子５０と、ワイヤ７０（制御ワイヤ７１、駆動ワイヤ７２）とを封止している。封止樹脂８０は、電気絶縁性を有する樹脂材料よりなる。樹脂材料は、例えばエポキシ樹脂よりなる。封止樹脂８０は、例えば黒色に着色されている。 [Encapsulating resin]
The sealing resin 80 seals a part of the first lead 10 and the second lead 20 (control lead 30, drive lead 40), the semiconductor element 50, and the wire 70 (control wire 71, drive wire 72). ing. The sealing resin 80 is made of a resin material having electrical insulation. The resin material is, for example, an epoxy resin. The sealing resin 80 is colored, for example, black.
　封止樹脂８０は、樹脂主面８０１、樹脂裏面８０２、樹脂側面８０３，８０４，８０５，８０６を有する。樹脂主面８０１と樹脂裏面８０２は、Ｚ方向において互いに反対方向を向く。樹脂主面８０１は、第１リード１０の主面１０１、制御リード３０の主面３０１、駆動リード４０の主面４０１と同じ方向を向く。樹脂側面８０３，８０４は、Ｘ方向において互いに反対方向を向く。樹脂側面８０５，８０６は、Ｙ方向において互いに反対方向を向く。 The sealing resin 80 has a resin main surface 801 and a resin back surface 802, and a resin side surface 803, 804, 805, 806. The resin main surface 801 and the resin back surface 802 face in opposite directions in the Z direction. The resin main surface 801 faces the same direction as the main surface 101 of the first lead 10, the main surface 301 of the control lead 30, and the main surface 401 of the drive lead 40. The resin side surfaces 803 and 804 face in opposite directions in the X direction. The resin side surfaces 805 and 806 face in opposite directions in the Y direction.
　樹脂裏面８０２において、第１リード１０の裏面１０２、制御リード３０の裏面３０２、駆動リード４０の裏面４０２は、封止樹脂８０の樹脂裏面８０２から露出する。各裏面１０２，３０２，４０２は、樹脂裏面８０２と面一である。図２に示すように、樹脂側面８０３において、第１リード１０の端子端面１１１と制御リード３０の端子端面３１１は、樹脂側面８０３から露出する。各端子端面１１１，３１１は、樹脂側面８０３と面一である。図１に示すように、樹脂側面８０４において、第１リード１０の端子端面１１１と駆動リード４０の端子端面４１１は、樹脂側面８０４から露出する。各端子端面１１１，４１１は、樹脂側面８０４と面一である。図１に示すように、樹脂側面８０５において、制御リード３０の連結端面３２１と駆動リード４０の連結端面４２１は、樹脂側面８０５から露出する。各連結端面３２１，４２１は、樹脂側面８０５と面一である。図２に示すように、樹脂側面８０６において、第１リード１０の連結端面１２１は、樹脂側面８０６から露出する。連結端面１２１は、樹脂側面８０６と面一である。 In the resin back surface 802, the back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40 are exposed from the resin back surface 802 of the sealing resin 80. The back surfaces 102, 302, and 402 are flush with the resin back surface 802. As shown in FIG. 2, in the resin side surface 803, the terminal end surface 111 of the first lead 10 and the terminal end surface 311 of the control lead 30 are exposed from the resin side surface 803. The terminal end faces 111 and 311 are flush with the resin side surface 803. As shown in FIG. 1, in the resin side surface 804, the terminal end surface 111 of the first lead 10 and the terminal end surface 411 of the drive lead 40 are exposed from the resin side surface 804. The terminal end faces 111 and 411 are flush with the resin side surface 804. As shown in FIG. 1, in the resin side surface 805, the connecting end surface 321 of the control lead 30 and the connecting end surface 421 of the drive lead 40 are exposed from the resin side surface 805. Each connecting end face 321 and 421 is flush with the resin side surface 805. As shown in FIG. 2, in the resin side surface 806, the connecting end surface 121 of the first lead 10 is exposed from the resin side surface 806. The connecting end surface 121 is flush with the resin side surface 806.
　［端子めっき層］
　図２に示すように、半導体装置Ａ１は、第１リード１０の裏面１０２、制御リード３０の裏面３０２、及び駆動リード４０の裏面４０２を覆う端子めっき層９０を有する。端子めっき層９０は、第１リード１０の裏面１０２を覆うめっき層９１と、制御リード３０の裏面３０２と駆動リード４０の裏面４０２を覆うめっき層９２，９３とを含む。 [Terminal plating layer]
As shown in FIG. 2, the semiconductor device A1 has a terminal plating layer 90 that covers the back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40. The terminal plating layer 90 includes a plating layer 91 that covers the back surface 102 of the first lead 10, and plating layers 92 and 93 that cover the back surface 302 of the control lead 30 and the back surface 402 of the drive lead 40.
　詳述すると、第１リード１０の裏面１０２は、端子裏面１１２とダイボンディング裏面１３２とを含む。端子裏面１１２とダイボンディング裏面１３２とには、第３めっき層としてのめっき層９１が形成されている。めっき層９１は、封止樹脂８０の樹脂裏面８０２から露出した金属製の被膜である。めっき層９１は、樹脂裏面８０２からＺ方向に突出している。めっき層９１は、例えば、実質的にＳｎ（錫）よりなる。実質的にＳｎよりなるとは、Ｓｎ、又はＳｎを主成分とする合金により形成されていることを意図している。めっき層９１は約９５％以上のＳｎを含む。好ましくは、めっき層９１は約９８％以上のＳｎを含む。より好ましくは、めっき層９１は約９９％以上のＳｎを含む。めっき層９１は約５％未満の不純物を含んでいてもよい。 More specifically, the back surface 102 of the first lead 10 includes the terminal back surface 112 and the die bonding back surface 132. A plating layer 91 as a third plating layer is formed on the terminal back surface 112 and the die bonding back surface 132. The plating layer 91 is a metal coating exposed from the resin back surface 802 of the sealing resin 80. The plating layer 91 projects in the Z direction from the resin back surface 802. The plating layer 91 is substantially made of, for example, Sn (tin). By substantially consisting of Sn, it is intended that it is formed of Sn or an alloy containing Sn as a main component. The plating layer 91 contains about 95% or more of Sn. Preferably, the plating layer 91 contains about 98% or more Sn. More preferably, the plating layer 91 contains about 99% or more of Sn. The plating layer 91 may contain impurities of less than about 5%.
　制御リード３０の裏面３０２は、端子部３１の端子裏面３１２を含む。端子裏面３１２には、第４めっき層としてのめっき層９２が形成されている。めっき層９２は、封止樹脂８０の樹脂裏面８０２から露出した金属製の被膜である。めっき層９２は、樹脂裏面８０２からＺ方向に突出している。めっき層９２は、例えば、実質的にＳｎよりなる。実質的にＳｎよりなるとは、Ｓｎ、又はＳｎを主成分とする合金により形成されていることを意図している。めっき層９２は約９５％以上のＳｎを含む。好ましくは、めっき層９２は約９８％以上のＳｎを含む。より好ましくは、めっき層９２は約９９％以上のＳｎを含む。めっき層９２は約５％未満の不純物を含んでいてもよい。 The back surface 302 of the control lead 30 includes the terminal back surface 312 of the terminal portion 31. A plating layer 92 as a fourth plating layer is formed on the terminal back surface 312. The plating layer 92 is a metal coating exposed from the resin back surface 802 of the sealing resin 80. The plating layer 92 projects in the Z direction from the resin back surface 802. The plating layer 92 is, for example, substantially made of Sn. By substantially consisting of Sn, it is intended that it is formed of Sn or an alloy containing Sn as a main component. The plating layer 92 contains about 95% or more of Sn. Preferably, the plating layer 92 contains about 98% or more Sn. More preferably, the plating layer 92 contains about 99% or more of Sn. The plating layer 92 may contain impurities of less than about 5%.
　駆動リード４０の裏面４０２は、端子裏面４１２とワイヤボンディング裏面４３２とを含む。端子裏面４１２とワイヤボンディング裏面４３２には、第４めっき層としてのめっき層９３が形成されている。めっき層９３は、封止樹脂８０の樹脂裏面８０２から露出した金属製の被膜である。めっき層９３は、樹脂裏面８０２からＺ方向に突出している。めっき層９３は、例えば、実質的にＳｎよりなる。実質的にＳｎよりなるとは、Ｓｎ、又はＳｎを主成分とする合金により形成されていることを意図している。めっき層９３は約９５％以上のＳｎを含む。好ましくは、めっき層９３は約９８％以上のＳｎを含む。より好ましくは、めっき層９３は約９９％以上のＳｎを含む。めっき層９３は約５％未満の不純物を含んでいてもよい。 The back surface 402 of the drive lead 40 includes a terminal back surface 412 and a wire bonding back surface 432. A plating layer 93 as a fourth plating layer is formed on the terminal back surface 412 and the wire bonding back surface 432. The plating layer 93 is a metal coating exposed from the resin back surface 802 of the sealing resin 80. The plating layer 93 projects in the Z direction from the resin back surface 802. The plating layer 93 is made of, for example, substantially Sn. By substantially consisting of Sn, it is intended that it is formed of Sn or an alloy containing Sn as a main component. The plating layer 93 contains about 95% or more of Sn. Preferably, the plating layer 93 contains about 98% or more Sn. More preferably, the plating layer 93 contains about 99% or more of Sn. The plating layer 93 may contain impurities of less than about 5%.
　［製造方法］
　つぎに、半導体装置Ａ１の製造方法の概要を説明する。
　図１２は、第１リード１０と第２リード２０とを形成するリードフレームＦ１を示す。 [Production method]
Next, an outline of the manufacturing method of the semiconductor device A1 will be described.
FIG. 12 shows a lead frame F1 forming the first lead 10 and the second lead 20.
　リードフレームＦ１は、板状の材料である。リードフレームＦ１は、第１リード１０の母材１４と、第２リード２０を構成する制御リード３０及び駆動リード４０の母材３４及び母材４４を含む。図１２において、ハッチングを付した部分は、第１リード１０のダイボンディング部１３と、制御リード３０の端子部３１と、駆動リード４０の端子部４１及びワイヤボンディング部４３となる部分である。 The lead frame F1 is a plate-shaped material. The lead frame F1 includes a base material 14 of the first lead 10 and a base material 34 and a base material 44 of the control lead 30 and the drive lead 40 constituting the second lead 20. In FIG. 12, the hatched portion is a portion serving as a die bonding portion 13 of the first lead 10, a terminal portion 31 of the control lead 30, a terminal portion 41 of the drive lead 40, and a wire bonding portion 43.
　図１２に示す２点鎖線は、半導体装置Ａ１を個片化する際の切断線Ｌ１である。第１リード１０と第２リード２０（制御リード３０，駆動リード４０）は、切断線Ｌ１より大きな矩形枠状のフレーム部Ｆ１１に接続されている。詳述すると、第１リード１０の端子部１１と連結部１２は、矩形枠状のフレーム部Ｆ１１まで延び、フレーム部Ｆ１１に接続されている。制御リード３０の端子部３１と連結部３２は、フレーム部Ｆ１１まで延び、フレーム部Ｆ１１に接続されている。駆動リード４０の端子部４１と連結部４２は、フレーム部Ｆ１１まで延び、フレーム部Ｆ１１に接続されている。 The two-dot chain line shown in FIG. 12 is the cutting line L1 when the semiconductor device A1 is separated into individual pieces. The first lead 10 and the second lead 20 (control lead 30, drive lead 40) are connected to a rectangular frame-shaped frame portion F11 larger than the cutting line L1. More specifically, the terminal portion 11 and the connecting portion 12 of the first lead 10 extend to the rectangular frame-shaped frame portion F11 and are connected to the frame portion F11. The terminal portion 31 and the connecting portion 32 of the control lead 30 extend to the frame portion F11 and are connected to the frame portion F11. The terminal portion 41 and the connecting portion 42 of the drive lead 40 extend to the frame portion F11 and are connected to the frame portion F11.
　このリードフレームＦ１に対して例えば電解めっき法によるめっき処理を行い、図９から図１１に示すめっき層１５，３５，４５を形成する。そして、図１等に示す半導体素子５０を第１リード１０に搭載する。次に、ワイヤ７０を接続する。制御ワイヤ７１を半導体素子５０の制御電極５２と制御リード３０とに接続し、駆動ワイヤ７２を半導体素子５０の駆動電極５３と駆動リード４０とに接続する。そして、封止樹脂８０にて半導体素子５０等を封止する。次いで、図２等に示すめっき層９１～９３を、例えば電解めっき法により形成する。 The lead frame F1 is plated by, for example, an electrolytic plating method to form the plating layers 15, 35, 45 shown in FIGS. 9 to 11. Then, the semiconductor element 50 shown in FIG. 1 and the like is mounted on the first lead 10. Next, the wire 70 is connected. The control wire 71 is connected to the control electrode 52 and the control lead 30 of the semiconductor element 50, and the drive wire 72 is connected to the drive electrode 53 and the drive lead 40 of the semiconductor element 50. Then, the semiconductor element 50 and the like are sealed with the sealing resin 80. Next, the plating layers 91 to 93 shown in FIG. 2 and the like are formed by, for example, an electrolytic plating method.
　その後、リードフレームＦ１及び封止樹脂８０を、図１２に示す切断線Ｌ１に沿って切断する。このとき、第１リード１０の端子部１１と連結部１２は、フレーム部Ｆ１１から切り離される。制御リード３０の端子部３１と連結部３２は、フレーム部Ｆ１１から切り離される。駆動リード４０の端子部４１と連結部４２は、フレーム部Ｆ１１から切り離される。これにより、半導体装置Ａ１となる個片が形成される。 After that, the lead frame F1 and the sealing resin 80 are cut along the cutting line L1 shown in FIG. At this time, the terminal portion 11 and the connecting portion 12 of the first lead 10 are separated from the frame portion F11. The terminal portion 31 and the connecting portion 32 of the control lead 30 are separated from the frame portion F11. The terminal portion 41 and the connecting portion 42 of the drive lead 40 are separated from the frame portion F11. As a result, individual pieces to be the semiconductor device A1 are formed.
　（作用）
　次に、本実施形態の半導体装置Ａ１の作用を説明する。
　半導体装置Ａ１は、第１リード１０と、第２リード２０と、第１リード１０に搭載された半導体素子５０と、を有する。第２リード２０は、制御リード３０と駆動リード４０とを含む。半導体素子５０の主面電極５１は、制御電極５２と駆動電極５３とを含む。制御電極５２は、制御ワイヤ７１により制御リード３０と接続されている。駆動電極５３は、駆動ワイヤ７２により駆動リード４０と接続されている。制御ワイヤ７１及び駆動ワイヤ７２（ワイヤ７０）の各々は、実質的にＡｌよりなる。なお、本実施形態において、実質的にＡｌよりなるとは、Ａｌ、又はＡｌを主成分とする合金により形成されていることを意図している。制御ワイヤ７１及び駆動ワイヤ７２の各々は約９５％以上のＡｌを含む。好ましくは、制御ワイヤ７１及び駆動ワイヤ７２の各々は約９８％以上のＡｌを含む。より好ましくは、制御ワイヤ７１及び駆動ワイヤ７２の各々は約９９％以上のＡｌを含む。制御ワイヤ７１及び駆動ワイヤ７２の各々は約５％未満の不純物を含んでいてもよい。したがって、Ａｕよりなるワイヤを用いる場合と比べ、半導体装置Ａ１のコスト上昇を抑制できる。また、Ｃｕよりなるワイヤを用いる場合と比べ、半導体素子５０に対する影響を低減できる。 (Action)
Next, the operation of the semiconductor device A1 of the present embodiment will be described.
The semiconductor device A1 includes a first lead 10, a second lead 20, and a semiconductor element 50 mounted on the first lead 10. The second lead 20 includes a control lead 30 and a drive lead 40. The main surface electrode 51 of the semiconductor element 50 includes a control electrode 52 and a drive electrode 53. The control electrode 52 is connected to the control lead 30 by a control wire 71. The drive electrode 53 is connected to the drive lead 40 by a drive wire 72. Each of the control wire 71 and the drive wire 72 (wire 70) is substantially made of Al. In the present embodiment, the term "substantially composed of Al" means that it is formed of Al or an alloy containing Al as a main component. Each of the control wire 71 and the drive wire 72 contains about 95% or more of Al. Preferably, each of the control wire 71 and the drive wire 72 contains about 98% or more of Al. More preferably, each of the control wire 71 and the drive wire 72 contains about 99% or more of Al. Each of the control wire 71 and the drive wire 72 may contain less than about 5% impurities. Therefore, the cost increase of the semiconductor device A1 can be suppressed as compared with the case of using the wire made of Au. Further, the influence on the semiconductor element 50 can be reduced as compared with the case where the wire made of Cu is used.
　制御リード３０の表面はめっき層３５により覆われている。めっき層３５は、Ｎｉめっき層３５１とＰｄめっき層３５２とＡｕめっき層３５３とを含む。制御リード３０をＣｕのみから構成した場合、実質的にＡｌよりなる制御ワイヤ７１と制御リード３０との間において生成される金属間化合物は、熱によって成長が進み、制御ワイヤ７１が制御リード３０から離れてしまう、等が生じる。したがって、Ｎｉめっき層３５１とＰｄめっき層３５２とＡｕめっき層３５３とを含むめっき層３５は、金属間化合物の生成を防止し、制御ワイヤ７１が制御リード３０から離れることを抑制する。 The surface of the control lead 30 is covered with a plating layer 35. The plating layer 35 includes a Ni plating layer 351, a Pd plating layer 352, and an Au plating layer 353. When the control lead 30 is composed of only Cu, the intermetallic compound generated between the control wire 71 substantially made of Al and the control lead 30 is grown by heat, and the control wire 71 is transferred from the control lead 30. It will be separated, etc. Therefore, the plating layer 35 including the Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 prevents the formation of intermetallic compounds and suppresses the control wire 71 from separating from the control lead 30.
　駆動リード４０の表面はめっき層４５により覆われている。めっき層４５は、Ｎｉめっき層４５１とＰｄめっき層４５２とＡｕめっき層４５３とを含む。駆動リード４０をＣｕのみから構成した場合、実質的にＡｌよりなる駆動ワイヤ７２と駆動リード４０との間において生成される金属間化合物は、熱によって成長が進み、駆動ワイヤ７２が駆動リード４０から離れてしまう、等が生じる。したがって、Ｎｉめっき層４５１とＰｄめっき層４５２とＡｕめっき層４５３とを含むめっき層４５は、金属間化合物の生成を防止し、駆動ワイヤ７２が駆動リード４０から離れることを抑制する。 The surface of the drive lead 40 is covered with the plating layer 45. The plating layer 45 includes a Ni plating layer 451, a Pd plating layer 452, and an Au plating layer 453. When the drive lead 40 is composed of only Cu, the intermetallic compound generated between the drive wire 72 substantially made of Al and the drive lead 40 is grown by heat, and the drive wire 72 is moved from the drive lead 40. It will be separated, etc. Therefore, the plating layer 45 including the Ni plating layer 451, the Pd plating layer 452, and the Au plating layer 453 prevents the formation of intermetallic compounds and prevents the drive wire 72 from separating from the drive lead 40.
　第１リード１０の表面はめっき層１５により覆われている。めっき層１５は、Ｎｉめっき層１５１とＰｄめっき層１５２とＡｕめっき層１５３とを含む。半導体素子５０は、接合材６０により第１リード１０の主面１０１に接合されている。接合材６０は、導電性を有し、実質的にＡｇペーストよりなる。Ａｇペーストは、例えばＮｉめっき層１５１との接合性が低い。したがって、Ｎｉめっき層１５１にＰｄめっき層１５２とＡｕめっき層１５３とを積層することで、実質的にＡｇペーストよりなる接合材６０との接合性を確保し、半導体素子５０の実装強度を確保できる。 The surface of the first lead 10 is covered with the plating layer 15. The plating layer 15 includes a Ni plating layer 151, a Pd plating layer 152, and an Au plating layer 153. The semiconductor element 50 is bonded to the main surface 101 of the first lead 10 by the bonding material 60. The bonding material 60 has conductivity and is substantially made of Ag paste. The Ag paste has low bondability with, for example, the Ni plating layer 151. Therefore, by laminating the Pd plating layer 152 and the Au plating layer 153 on the Ni plating layer 151, the bondability with the bonding material 60 substantially made of Ag paste can be ensured, and the mounting strength of the semiconductor element 50 can be secured. ..
　第１リード１０の裏面１０２と、制御リード３０の裏面３０２と、駆動リード４０の裏面４０２とが封止樹脂８０の樹脂裏面８０２から露出している。そして、第１リード１０の裏面１０２にはめっき層９１が形成されている。制御リード３０の裏面３０２にはめっき層９２が形成されている。駆動リード４０の裏面４０２には、めっき層９３が形成されている。めっき層９１，９２，９３は、実質的にＳｎよりなる。これらのめっき層９１，９２，９３は、半導体装置Ａ１を回路基板に実装する際、はんだが付着する。したがって、半導体装置Ａ１の回路基板への実装強度を高めることができる。 The back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40 are exposed from the resin back surface 802 of the sealing resin 80. A plating layer 91 is formed on the back surface 102 of the first lead 10. A plating layer 92 is formed on the back surface 302 of the control lead 30. A plating layer 93 is formed on the back surface 402 of the drive lead 40. The plating layers 91, 92, and 93 are substantially made of Sn. Solder adheres to these plating layers 91, 92, and 93 when the semiconductor device A1 is mounted on a circuit board. Therefore, the mounting strength of the semiconductor device A1 on the circuit board can be increased.
　（効果）
　以上記述したように、本実施の形態によれば、以下の効果を奏する。
　（１）半導体装置Ａ１は、第１リード１０と、第２リード２０と、第１リード１０に搭載された半導体素子５０と、を有する。第２リード２０は、制御リード３０と駆動リード４０とを含む。半導体素子５０の主面電極５１は、制御電極５２と駆動電極５３とを含む。制御電極５２は、制御ワイヤ７１により制御リード３０と接続されている。駆動電極５３は、駆動ワイヤ７２により駆動リード４０と接続されている。制御ワイヤ７１及び駆動ワイヤ７２（ワイヤ７０）は、実質的にＡｌよりなる。したがって、Ａｕよりなるワイヤを用いる場合と比べ、半導体装置Ａ１のコスト上昇を抑制できる。また、Ｃｕよりなるワイヤを用いる場合と比べ、半導体素子５０に対する影響を低減できる。 (effect)
As described above, according to the present embodiment, the following effects are obtained.
(1) The semiconductor device A1 includes a first lead 10, a second lead 20, and a semiconductor element 50 mounted on the first lead 10. The second lead 20 includes a control lead 30 and a drive lead 40. The main surface electrode 51 of the semiconductor element 50 includes a control electrode 52 and a drive electrode 53. The control electrode 52 is connected to the control lead 30 by a control wire 71. The drive electrode 53 is connected to the drive lead 40 by a drive wire 72. The control wire 71 and the drive wire 72 (wire 70) are substantially made of Al. Therefore, the cost increase of the semiconductor device A1 can be suppressed as compared with the case of using the wire made of Au. Further, the influence on the semiconductor element 50 can be reduced as compared with the case where the wire made of Cu is used.
　（２）制御リード３０の表面はめっき層３５により覆われている。めっき層３５は、Ｎｉめっき層３５１とＰｄめっき層３５２とＡｕめっき層３５３とを含む。制御リード３０をＣｕのみから構成した場合、実質的にＡｌよりなる制御ワイヤ７１と制御リード３０との間において生成される金属間化合物は、熱によって成長が進み、制御ワイヤ７１が制御リード３０から離れてしまう、等が生じる。したがって、Ｎｉめっき層３５１とＰｄめっき層３５２とＡｕめっき層３５３とを含むめっき層３５は、金属間化合物の生成を防止し、制御ワイヤ７１が制御リード３０から離れることを抑制する。 (2) The surface of the control lead 30 is covered with the plating layer 35. The plating layer 35 includes a Ni plating layer 351, a Pd plating layer 352, and an Au plating layer 353. When the control lead 30 is composed of only Cu, the intermetallic compound generated between the control wire 71 substantially made of Al and the control lead 30 is grown by heat, and the control wire 71 is transferred from the control lead 30. It will be separated, etc. Therefore, the plating layer 35 including the Ni plating layer 351 and the Pd plating layer 352 and the Au plating layer 353 prevents the formation of intermetallic compounds and suppresses the control wire 71 from separating from the control lead 30.
　（３）駆動リード４０の表面はめっき層４５により覆われている。めっき層４５は、Ｎｉめっき層４５１とＰｄめっき層４５２とＡｕめっき層４５３とを含む。駆動リード４０をＣｕのみから構成した場合、実質的にＡｌよりなる駆動ワイヤ７２と駆動リード４０との間において生成される金属間化合物は、熱によって成長が進み、駆動ワイヤ７２が駆動リード４０から離れてしまう、等が生じる。したがって、Ｎｉめっき層４５１とＰｄめっき層４５２とＡｕめっき層４５３とを含むめっき層４５は、金属間化合物の生成を防止し、駆動ワイヤ７２が駆動リード４０から離れることを抑制する。 (3) The surface of the drive lead 40 is covered with the plating layer 45. The plating layer 45 includes a Ni plating layer 451, a Pd plating layer 452, and an Au plating layer 453. When the drive lead 40 is composed of only Cu, the intermetallic compound generated between the drive wire 72 substantially made of Al and the drive lead 40 is grown by heat, and the drive wire 72 is moved from the drive lead 40. It will be separated, etc. Therefore, the plating layer 45 including the Ni plating layer 451, the Pd plating layer 452, and the Au plating layer 453 prevents the formation of intermetallic compounds and prevents the drive wire 72 from separating from the drive lead 40.
　（４）第１リード１０の表面はめっき層１５により覆われている。めっき層１５は、Ｎｉめっき層１５１とＰｄめっき層１５２とＡｕめっき層１５３とを含む。半導体素子５０は、接合材６０により第１リード１０の主面１０１に接合されている。接合材６０は、導電性を有し、実質的にＡｇペーストよりなる。Ａｇペーストは、例えばＮｉめっき層１５１との接合性が低い。したがって、Ｎｉめっき層１５１にＰｄめっき層１５２とＡｕめっき層１５３とを積層することで、実質的にＡｇペーストよりなる接合材６０との接合性を確保し、半導体素子５０の実装強度を確保できる。 (4) The surface of the first lead 10 is covered with the plating layer 15. The plating layer 15 includes a Ni plating layer 151, a Pd plating layer 152, and an Au plating layer 153. The semiconductor element 50 is bonded to the main surface 101 of the first lead 10 by the bonding material 60. The bonding material 60 has conductivity and is substantially made of Ag paste. The Ag paste has low bondability with, for example, the Ni plating layer 151. Therefore, by laminating the Pd plating layer 152 and the Au plating layer 153 on the Ni plating layer 151, the bondability with the bonding material 60 substantially made of Ag paste can be ensured, and the mounting strength of the semiconductor element 50 can be secured. ..
　（５）第１リード１０の裏面１０２と、制御リード３０の裏面３０２と、駆動リード４０の裏面４０２とが封止樹脂８０の樹脂裏面８０２から露出している。そして、第１リード１０の裏面１０２にはめっき層９１が形成されている。制御リード３０の裏面３０２にはめっき層９２が形成されている。駆動リード４０の裏面４０２には、めっき層９３が形成されている。めっき層９１，９２，９３は、実質的にＳｎよりなる。これらのめっき層９１，９２，９３は、半導体装置Ａ１を回路基板に実装する際、はんだが付着する。したがって、半導体装置Ａ１の回路基板への実装強度を高めることができる。 (5) The back surface 102 of the first lead 10, the back surface 302 of the control lead 30, and the back surface 402 of the drive lead 40 are exposed from the resin back surface 802 of the sealing resin 80. A plating layer 91 is formed on the back surface 102 of the first lead 10. A plating layer 92 is formed on the back surface 302 of the control lead 30. A plating layer 93 is formed on the back surface 402 of the drive lead 40. The plating layers 91, 92, and 93 are substantially made of Sn. Solder adheres to these plating layers 91, 92, and 93 when the semiconductor device A1 is mounted on a circuit board. Therefore, the mounting strength of the semiconductor device A1 on the circuit board can be increased.
　（変更例）
　上記実施形態の半導体装置Ａ１は例えば以下のように変更できる。上記実施形態と以下の各変更例は、技術的な矛盾が生じない限り、互いに組み合せることができる。なお、以下の変更例において、上記実施形態と共通する部分については、上記実施形態と同一の符号を付してその説明を省略する。 (Change example)
The semiconductor device A1 of the above embodiment can be changed as follows, for example. The above embodiment and each of the following modifications can be combined with each other as long as there is no technical contradiction. In the following modification examples, the parts common to the above-described embodiment are designated by the same reference numerals as those in the above-described embodiment, and the description thereof will be omitted.
　・駆動ワイヤ７２の本数は、半導体装置Ａ１に必要な電流量に応じて、１本又は３本以上とすることもできる。
　・制御ワイヤ７１の線径と駆動ワイヤ７２の線径とを互いに異なるようにしてもよい。 The number of drive wires 72 may be one or three or more depending on the amount of current required for the semiconductor device A1.
-The wire diameter of the control wire 71 and the wire diameter of the drive wire 72 may be different from each other.
　・図１３に示すように、半導体装置Ａ２は、半導体素子５０ａを有する。この変更例の半導体素子５０ａは、ダイオードである。半導体素子５０ａは、主面電極５１と裏面電極５４とを有する。主面電極５１は例えばアノード電極であり、裏面電極５４は例えばカソード電極である。なお、主面電極５１をカソード電極、裏面電極５４をアノード電極とすることもできる。この半導体装置Ａ２は、１つの第２リード２０を備える。半導体素子５０の主面電極５１は、複数本のワイヤ７０により第２リード２０に接続される。この半導体装置Ａ２においても、上記実施形態と同様の効果を得ることができる。 As shown in FIG. 13, the semiconductor device A2 has a semiconductor element 50a. The semiconductor element 50a of this modification is a diode. The semiconductor element 50a has a main surface electrode 51 and a back surface electrode 54. The main surface electrode 51 is, for example, an anode electrode, and the back surface electrode 54 is, for example, a cathode electrode. The main surface electrode 51 may be used as the cathode electrode, and the back surface electrode 54 may be used as the anode electrode. The semiconductor device A2 includes one second lead 20. The main surface electrode 51 of the semiconductor element 50 is connected to the second lead 20 by a plurality of wires 70. Also in this semiconductor device A2, the same effect as that of the above-described embodiment can be obtained.
　・半導体素子をＬＳＩとしてもよい。ＬＳＩとした場合、ＬＳＩが備える複数の電極に怖じて第２リード２０の数を変更した構成とすることができる。 -The semiconductor element may be an LSI. In the case of an LSI, the number of the second leads 20 can be changed due to fear of the plurality of electrodes provided in the LSI.
　Ａ１，Ａ２　半導体装置
　１０　第１リード
　１０１　主面
　１０２　裏面
　１０３　裏面凹部
　１１　端子部
　１１１　端子端面（第１露出面）
　１１２　端子裏面
　１２　連結部
　１２１　連結端面（第１露出面）
　１３　ダイボンディング部
　１３２　ダイボンディング裏面
　１４　母材（第１母材）
　１５　めっき層（第１めっき層）
　１５１　めっき層（Ｎｉめっき層）
　１５２　めっき層（Ｐｄめっき層）
　１５３　めっき層（Ａｕめっき層）
　２０　第２リード
　３０　制御リード
　３０１　主面（第２主面）
　３０２　裏面（第２裏面）
　３０３　裏面凹部
　３１　端子部
　３１１　端子端面（第２露出面）
　３１２　端子裏面
　３２　連結部
　３２１　連結端面（第２露出面）
　３４　母材（第２母材）
　３５　めっき層（第２めっき層）
　３５１　めっき層（Ｎｉめっき層）
　３５２　めっき層（Ｐｄめっき層）
　３５３　めっき層（Ａｕめっき層）
　４０　駆動リード
　４０１　主面（第２主面）
　４０２　裏面（第２裏面）
　４０３　裏面凹部
　４１　端子部
　４１１　端子端面（第２露出面）
　４１２　端子裏面
　４２　連結部
　４２１　連結端面（第２露出面）
　４３　ワイヤボンディング部
　４３２　ワイヤボンディング裏面
　４４　母材（第２母材）
　４５　めっき層（第２めっき層）
　４５１　めっき層（Ｎｉめっき層）
　４５２　めっき層（Ｐｄめっき層）
　４５３　めっき層（Ａｕめっき層）
　５０，５０ａ　半導体素子
　５１　主面電極
　５２　制御電極
　５３　駆動電極
　５４　裏面電極
　５０１　素子主面
　５０２　素子裏面
　６０　接合材
　７０　ワイヤ
　７１　制御ワイヤ
　７２　駆動ワイヤ
　８０　封止樹脂
　８０１　樹脂主面
　８０２　樹脂裏面
　８０３～８０６　樹脂側面
　９０　端子めっき層
　９１～９３　めっき層
　Ｆ１　リードフレーム
　Ｌ１　切断線 A1, A2 Semiconductor device 10 1st lead 101 Main surface 102 Back surface 103 Back surface recess 11 Terminal part 111 Terminal end surface (1st exposed surface)
112 Terminal back surface 12 Connecting part 121 Connecting end surface (first exposed surface)
13 Die bonding part 132 Die bonding back surface 14 Base material (first base material)
15 Plating layer (1st plating layer)
151 plating layer (Ni plating layer)
152 Plating layer (Pd plating layer)
153 Plating layer (Au plating layer)
20 2nd lead 30 Control lead 301 Main surface (2nd main surface)
302 back side (second back side)
303 Backside recess 31 Terminal part 311 Terminal end face (second exposed surface)
312 Terminal back surface 32 Connecting part 321 Connecting end surface (second exposed surface)
34 Base material (second base material)
35 Plating layer (second plating layer)
351 plating layer (Ni plating layer)
352 plating layer (Pd plating layer)
353 Plating layer (Au plating layer)
40 Drive lead 401 Main surface (second main surface)
402 Back side (second back side)
403 Back surface recess 41 Terminal part 411 Terminal end face (second exposed surface)
412 Terminal back surface 42 Connecting part 421 Connecting end surface (second exposed surface)
43 Wire bonding part 432 Wire bonding back surface 44 Base material (second base material)
45 Plating layer (second plating layer)
451 plating layer (Ni plating layer)
452 Plating layer (Pd plating layer)
453 Plating layer (Au plating layer)
50, 50a Semiconductor element 51 Main surface electrode 52 Control electrode 53 Drive electrode 54 Back surface electrode 501 Element main surface 502 Element back surface 60 Bonding material 70 Wire 71 Control wire 72 Drive wire 80 Encapsulating resin 801 Resin main surface 802 Resin back surface 803 to 806 Resin side 90 terminal plating layer 91-93 plating layer F1 lead frame L1 cutting wire

Claims (15)

  1. 　第１主面と、前記第１主面と反対方向を向く第１裏面とを有する第１リードと、
    　前記第１リードに対して前記第１主面と平行な第１方向に前記第１リードから離れて配置され、前記第１主面と同じ方向を向く第２主面と、前記第２主面と反対方向を向く第２裏面とを有する第２リードと、
    　前記第１主面に実装され、前記第１主面と同じ方向を向く主面電極を有する半導体素子と、
    　前記半導体素子を前記第１リードに接合する接合材と、
    　前記主面電極と前記第２主面とを電気的に接続するワイヤと、
    　前記半導体素子及び前記ワイヤを封止する封止樹脂と、
    　を備え、
    　前記ワイヤはＡｌを含み、
    　前記第２リードは、Ｃｕを含み、前記第１主面と同じ方向を向く上面を有する第２母材と、前記第２母材の上面を覆い、前記第２主面を表面とする第２めっき層と、を有し、
    　前記第２めっき層は、前記第２母材の前記上面に積層されたＮｉめっき層と、前記Ｎｉめっき層に積層されたＰｄめっき層と、前記Ｐｄめっき層に積層されたＡｕめっき層とを含む、
    　半導体装置。     A first lead having a first main surface and a first back surface facing in the direction opposite to the first main surface, and
    A second main surface, which is arranged away from the first lead in the first direction parallel to the first main surface with respect to the first lead and faces the same direction as the first main surface, and the second main surface. A second lead having a second back surface facing in the opposite direction to the
    A semiconductor device mounted on the first main surface and having a main surface electrode facing the same direction as the first main surface,
    A bonding material for joining the semiconductor element to the first lead,
    A wire that electrically connects the main surface electrode and the second main surface,
    A sealing resin that seals the semiconductor element and the wire,
    With
    The wire contains Al and contains
    The second lead contains Cu and has a second base material having an upper surface facing the same direction as the first main surface, and a second base material that covers the upper surface of the second base material and has the second main surface as a surface. With a plating layer,
    The second plating layer includes a Ni plating layer laminated on the upper surface of the second base material, a Pd plating layer laminated on the Ni plating layer, and an Au plating layer laminated on the Pd plating layer. include,
    Semiconductor device.
  2. 　前記第１リードは、Ｃｕを含み、前記第１主面と同じ方向を向く上面を有する第１母材と、前記第１母材の上面を覆い、前記第１主面を表面とする第１めっき層と、を有し、
    　前記第１めっき層は、前記第１母材の前記上面に積層されたＮｉめっき層と、前記Ｎｉめっき層に積層されたＰｄめっき層と、前記Ｐｄめっき層に積層されたＡｕめっき層とを含む、
    　請求項１に記載の半導体装置。     The first lead contains Cu and has a first base material having an upper surface facing the same direction as the first main surface, and a first base material that covers the upper surface of the first base material and has the first main surface as a surface. With a plating layer,
    The first plating layer includes a Ni plating layer laminated on the upper surface of the first base material, a Pd plating layer laminated on the Ni plating layer, and an Au plating layer laminated on the Pd plating layer. include,
    The semiconductor device according to claim 1.
  3. 　前記半導体素子は、前記主面電極と反対側を向く裏面電極を有し、
    　前記裏面電極は、前記接合材により前記第１リードに接続されている、
    　請求項１又は請求項２に記載の半導体装置。     The semiconductor element has a back electrode that faces the opposite side of the main electrode.
    The back electrode is connected to the first lead by the bonding material.
    The semiconductor device according to claim 1 or 2.
  4. 　前記接合材は、導電性を有するＡｇペーストよりなる、請求項１から請求項３のいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 3, wherein the bonding material is made of a conductive Ag paste.
  5. 　前記封止樹脂は、前記第１主面と同じ方向を向く上面と、前記上面と反対方向を向く下面と、前記上面と前記下面との間の側面とを有している、請求項１から請求項４のいずれか一項に記載の半導体装置。 The sealing resin has an upper surface facing the same direction as the first main surface, a lower surface facing the opposite direction to the upper surface, and a side surface between the upper surface and the lower surface, according to claim 1. The semiconductor device according to any one of claims 4.
  6. 　前記第２リードは、前記封止樹脂の前記側面から露出する第２露出面を有し、
    　前記第２露出面は、前記母材が露出している、
    　請求項５に記載の半導体装置。     The second lead has a second exposed surface exposed from the side surface of the sealing resin.
    The base material is exposed on the second exposed surface.
    The semiconductor device according to claim 5.
  7. 　前記第１リードは、前記封止樹脂の前記側面から露出する第１露出面を有し、
    　前記第１露出面は、前記母材が露出している、
    　請求項５又は請求項６に記載の半導体装置。     The first lead has a first exposed surface exposed from the side surface of the sealing resin.
    The base material is exposed on the first exposed surface.
    The semiconductor device according to claim 5 or 6.
  8. 　前記第２リードの前記第２裏面は、前記封止樹脂の前記下面と面一である、請求項５から請求項７のいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 5 to 7, wherein the second back surface of the second lead is flush with the lower surface of the sealing resin.
  9. 　前記第１リードの前記第１裏面は、前記封止樹脂の前記下面と面一である、請求項５から請求項８のいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 5 to 8, wherein the first back surface of the first lead is flush with the lower surface of the sealing resin.
  10. 　前記第１リードの前記第１裏面を覆う第３めっき層と、
    　前記第２リードの前記第２裏面を覆う第４めっき層と、
    　を有する、請求項１から請求項９のいずれか一項に記載の半導体装置。     A third plating layer covering the first back surface of the first lead,
    A fourth plating layer covering the second back surface of the second lead,
    The semiconductor device according to any one of claims 1 to 9.
  11. 　前記第３めっき層と前記第４めっき層は、Ｓｎを含む、請求項１０に記載の半導体装置。 The semiconductor device according to claim 10, wherein the third plating layer and the fourth plating layer include Sn.
  12. 　前記ワイヤは、超音波接合によって前記第２リードと前記主面電極とに接合されている、請求項１から請求項１１のうちのいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 11, wherein the wire is bonded to the second lead and the main surface electrode by ultrasonic bonding.
  13. 　前記ワイヤの線径は、４０μｍ以上１００μｍ以下である、請求項１から請求項１２のいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 12, wherein the wire diameter of the wire is 40 μm or more and 100 μm or less.
  14. 　前記半導体素子はトランジスタであり、前記主面電極は、制御電極と駆動電極とを含み、
    　前記第２リードは、前記第１主面と平行かつ前記第１方向と直交する第２方向に沿って互いに離れて配列された制御リード及び駆動リードとを含み、
    　前記ワイヤは、前記制御電極と前記制御リードとを接続する制御ワイヤと、前記駆動電極と前記駆動リードとを接続する駆動ワイヤとを含む、
    　請求項１から請求項１３のいずれか一項に記載の半導体装置。     The semiconductor element is a transistor, and the main surface electrode includes a control electrode and a drive electrode.
    The second lead includes a control lead and a drive lead arranged parallel to the first main surface and separated from each other along a second direction orthogonal to the first direction.
    The wire includes a control wire that connects the control electrode and the control lead, and a drive wire that connects the drive electrode and the drive lead.
    The semiconductor device according to any one of claims 1 to 13.
  15. 　前記半導体素子は、Ｓｉチップ、又はＳｉＣチップである、請求項１から請求項１４のうちのいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 14, wherein the semiconductor element is a Si chip or a SiC chip.
PCT/JP2021/016173 2020-04-21 2021-04-21 Semiconductor device WO2021215472A1 (en)

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US20220301992A1 (en) * 2021-03-18 2022-09-22 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
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