WO2021214111A1 - Segmented planar sputtering target and methods for using the same - Google Patents

Segmented planar sputtering target and methods for using the same Download PDF

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Publication number
WO2021214111A1
WO2021214111A1 PCT/EP2021/060332 EP2021060332W WO2021214111A1 WO 2021214111 A1 WO2021214111 A1 WO 2021214111A1 EP 2021060332 W EP2021060332 W EP 2021060332W WO 2021214111 A1 WO2021214111 A1 WO 2021214111A1
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Prior art keywords
sputter target
planar
alloying agent
alloy
target segment
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PCT/EP2021/060332
Other languages
French (fr)
Inventor
Rickard Tim GUNNARSSON
John Viktor ELOFSSON
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Mimsi Materials Ab
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Publication of WO2021214111A1 publication Critical patent/WO2021214111A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3647—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer in combination with other metals, silver being more than 50%
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
    • C03C17/366—Low-emissivity or solar control coatings
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3681—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating being used in glazing, e.g. windows or windscreens
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/91—Coatings containing at least one layer having a composition gradient through its thickness
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • C03C2217/944—Layers comprising zinc oxide

Definitions

  • the present disclosure relates to a segmented sputtering target and to methods of using the same for deposition of coatings on a substrate.
  • the sputtering targets, systems and methods of the disclosure find particular use in the deposition of coatings on glazings, such as window or vehicle glass.
  • glazings that are used in architectural applications include clear and tinted float glass, tempered glass, laminated glass as well as a variety of coated glasses, all of which can be glazed singly or as double, or even triple, glazing units.
  • the most efficient type of coating comprises multiple thin layer of which at least one is a functional metal layer, which typically is made of silver (Ag) owing to its high electrical conductivity resulting in high IR reflectivity characteristics.
  • the optical and electrical properties of the glazing are directly related to the material used as a functional metal layer, thickness of the functional metal layer and the quality of the functional metal layer in terms of, e.g., crystallinity, grain size and interfacial roughness.
  • Formation of the Ag functional metal layer occurs through multiple growth stages, such as nucleation, coalescence and hole filling. Process parameters during deposition can be tailored to affect the different growth stages to affect, e.g., the quality of the functional metal layer in order achieve improved electrical and optical properties.
  • PCT/EP2019/078654 teaches the use of functional metal Ag alloy layer(s) instead of unalloyed Ag functional metal layer(s) to improve upon on the electrical and optical properties of the glazing.
  • the use of Ag alloys is a way to alter the layer formation of unalloyed Ag functional metal layers. By only affecting specific growth stages with a specific Ag alloy the electrical and optical properties of a functional metal layer can be improved.
  • a particular challenge is to enable the formation of a functional metal layer where specific parts of the functional metal layer are formed with at least one Ag alloy in a way that is cost effective on an industrial scale.
  • a planar sputter target comprising at least a first sputter target segment.
  • the first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta W, Pt and Au.
  • a first alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the first sputter target segment, the rest being Ag.
  • planar sputter target is herein meant a planar body of material sized and adapted for use as source material for vapor deposition processes such as magnetron sputtering.
  • the target material consists essentially of, or consists of, Ag or Ag and an alloying agent.
  • the Ag alloy material may contain substantially only elemental Ag or Ag and the alloying agent, but it also may contain insubstantial or incidental amounts of impurities ordinarily associated with Ag and the alloying agent, and may also contain incidental insubstantial or substantial amounts of materials that do not materially affect the basic and novel characteristics of the Ag or Ag alloy.
  • the Ag alloy target material may contain less than 0.1 wt.%, preferably less than 0.05 wt.%, most preferably less than 0.01 wt.% of other components, such as incidental impurites.
  • the alloying agent content is herein calculated as a ratio of the alloying agent to the sum of the amounts of the Ag and the alloying agent. This means that possible incidental impurities are not included in the alloying agent content.
  • the first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.%, of the first Ag alloy, the rest being Ag.
  • the planar sputter target may further comprise a second sputter target segment comprising a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al,
  • a second alloying agent content may be 0.02- 0.50 at.%, preferably 0.06-0.30 at.% of the second Ag alloy, the rest being Ag.
  • the second alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.% of the second Ag alloy, the rest being Ag.
  • the planar sputter target may further comprise a second sputter target segment, wherein the second sputter target segment consists essentially of Ag.
  • the first sputter target segment and the second sputter target segment may be juxtaposed.
  • the planar sputter target may present an active sputter surface, wherein said active sputter surface comprises at least one exposed surface of the first sputter target segment and at least one exposed surface of the second sputter target segment.
  • the active sputter surface may be elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the sputter target segments may be juxtaposed along a line which extends along the major direction.
  • a planar sputter target for coating a window glass or vehicle glass.
  • a system comprising a sputter coating device, a planar sputter target, said planar sputter target being operably arranged in the sputter coating device, and a movement device, configured to cause a substrate and said planar sputter target to move relative to each other along a movement direction.
  • the planar sputter target may be arranged such that a point on the substrate is first deposited from the first sputter target segment and said point is subsequently deposited from the second sputter target segment. According to a fourth aspect there is provided a use of a system for coating a window glass or vehicle glass.
  • a method of sputtering at least part of a coating on a substrate comprises providing a planar sputter target comprising, at least a first sputter target target segment.
  • the first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr,
  • a first alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the first sputter target segment, the rest being Ag. Sputtering the target while causing the substrate to move relative to the target, so as to form a coating layer on the substrate.
  • the first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.%, of the first Ag alloy, the rest being Ag.
  • a second sputter target segment may comprise a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta W, Pt and Au.
  • a second alloying agent content may be 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the second Ag alloy, the rest being Ag.
  • the second alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.% of the second Ag alloy, the rest being Ag.
  • the method may further include providing a second
  • the method may further include providing the first sputter target segment and the second sputter target segment juxtaposed.
  • the target and the substrate may be moved relative to each other in a movement direction, such that a point on the substrate may be first deposited substantially from the first sputter target segment and said point may be subsequently deposited substantially from the second sputter target segment.
  • a movement direction may be substantially linear and wherein a distance between the planar sputter target and the substrate, taken along a direction normal to a substrate surface, may be substantially constant.
  • the sputter target may present an active sputter surface, which is elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the movement direction may be substantially parallel with the minor direction.
  • the first and second sputter target segments may be juxtaposed along a line which extends along the major direction.
  • the method may be applied for coating a window glass or vehicle glass.
  • a dual planar sputter target arrangement comprising a first planar sputter target and a second planar sputter target, wherein the the first planar sputter target comprises at least a first sputter target segment and a second sputter target segment, wherein the first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr,
  • a first alloying agent content is 0.02-3.00 at.%, preferably 0.10-1.50 at.% of the first Ag alloy, the rest being Ag, wherein the second sputter target segment consists essentially of Ag, and wherein the second planar sputter target consists essentially of Ag.
  • the first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.
  • the sputter target segments may present a respective active sputter surface, which is elongated with a major direction and a minor direction, and wherein the first sputter target segment and the second sputter target segment are juxtaposed along the major direction.
  • the second planar sputter target may present an active sputter surface, which is elongated with a major direction and a minor direction, wherein the second planar sputter target is separated from the first planar sputter target and arranged with its major direction parallel with the major direction of the first and second sputter target segments.
  • a seventh aspect there is provided use of a dual planar sputter target arrangement as described above for coating a window glass or vehicle glass.
  • a system comprising a sputter coating device, a dual planar sputter target arrangement, said dual planar sputter target arrangement being operably arranged in the sputter coating device, and a movement device, configured to cause a substrate and said dual planar sputter target arrangement to move relative to each other along a movement direction.
  • the dual planar sputter target arrangement may be arranged such that a point on the substrate is first deposited from the first sputter target segment, said point is subsequently deposited from the second sputter target segment, and said point is subsequently deposited from the second planar sputter target.
  • a ninth aspect there is provided a use of a system for coating a window glass or a vehicle glass.
  • a method of sputtering at least part of a coating on a substrate comprising providing a transparent substrate, providing a first planar sputter target comprising, at least a first sputter target target segment and a second sputter target segment, providing a second planar sputter target, such that the first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn,
  • a first alloying agent content is 0.02- 3.00 at.%, preferably 0.10-1 .50 at.% of the Ag alloy, the rest being Ag, and, such that the second sputter target segment consists essentially of Ag, and such that the second planar sputter target consists essentially of Ag, and sputtering the first planar sputter target and the second planar sputter target while causing the transparent substrate to move relative to the planar sputter targets, so as to form a coating layer on the substrate.
  • the first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.
  • the targets and the substrate may be moved relative to each other in a movement direction, such that a point on the substrate is first deposited substantially from the first sputter target segment, said point is subsequently deposited substantially from the second sputter target segment, and said point is finally deposited substantially from the second planar sputter target.
  • the method may further comprise arranging the first sputter target segment and the second sputter target segment to be juxtaposed in a direction parallel with the movement direction.
  • the movement direction may be substantially linear and wherein a distance between the first planar sputter target and the transparent substrate , and a distance between the second planar sputter target and the transparent substrate, taken along a direction normal to a substrate surface, is substantially constant.
  • the first planar sputter target and the second planar sputter target may present active sputter surfaces, which are elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and the movement direction may be substantially parallel with the minor direction.
  • a method of coating a window glass or vehicle glass comprising the method as described above.
  • a glazing in the form of a window glass or vehicle glass comprising a transparent substrate, and a coating, comprising a functional metal layer, comprising, in order outward from the transparent substrate: a first composition layer zone, a gradient composition layer zone, covering and in direct contact with the first composition layer zone, and a second composition layer zone, covering and in direct contact with the gradient composition layer zone, wherein the first composition layer zone and the second composition layer zone each consist of a majority of Ag or Ag alloy.
  • the first composition layer zone may comprise a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and a first alloying agent content may be 0.02-3.00 at.%, preferably 0.10-1 .50 at.% of the first Ag alloy, the rest being Ag.
  • a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au
  • a first alloying agent content may
  • the first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.
  • the second composition layer zone may comprise a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and a second alloying agent content may be 0.02-3.00 at.%, preferably 0.10-1 .50 at.% of the second Ag alloy, the rest being Ag.
  • a second alloying agent content may be 0.02-3.00 at.%, preferably 0.10-1 .50 at.% of the second Ag alloy, the rest being Ag.
  • the second alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.
  • the first alloying agent content of the first composition layer zone may deviate less than 45 %, preferably less than 30 %, more preferably less than 15 % from an average value of the first alloying agent content of the first composition layer zone
  • the second alloying agent content of the second composition layer zone may deviate less than 45 %, preferably less than 30 %, more preferably less than 15 % from an average value of the second alloying agent content of the second composition layer zone
  • the average value of the first alloying agent content of the first composition layer zone and the average value of the second alloying agent content of the second composition layer zone may be different from each other.
  • the average value of the first alloying agent content of the first composition layer zone may be higher than the average value of the second alloying agent content of the second composition layer zone.
  • the second composition layer zone may consist essentially of Ag.
  • Figs. 1a-1b schematically illustrate a non-limiting example of a planar sputter target used to sputter a layer on a substrate.
  • Figs. 2a-2b schematically illustrate a non-limiting example of two planar sputter targets used to sputter a layer on a substrate.
  • Fig. 3 schematically illustrates a non-limiting example of a coating sputtered on a substrate.
  • Fig. 4 schematically illustrates the alloying content of different target arrangements.
  • a non-limiting example of a structure of a planar sputter target 1 containing two sputter target segments is schematically illustrated.
  • the planar sputter target 1 comprises a first sputter target segment 10 and a second sputter target segment 11.
  • Fig. 1a illustrates the sputter target 1 and substrate 12, 13 in a planar view from above.
  • Fig. 1b illustrates the sputter target 1 and the substrate 12, 13 in a cross-sectional view.
  • the first sputter target segment 10 may be a homogeneous body of target material.
  • the target material is a Ag alloy.
  • the Ag alloy is Ag alloyed with an alloying agent selected from a group consisting of Li, C, Na, Mg, Al,
  • the second sputter target segment 11 may be a homogeneous body of target material.
  • the target material may be Ag, or a second Ag alloy.
  • the second Ag alloy may be Ag alloyed with an alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe,
  • an alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe,
  • the alloying agent content of the second Ag alloy may be lower, the same or higher than the Ag alloy.
  • the first target segment 10 and the second target segment 11 may be juxtaposed.
  • the first target segment 10 and the second target segment 11 may, but need not, be in contact with each other.
  • the first target segment 10 and the second target segment 11 may be separated with a distance from each other or by at least one additional target segment situated in between the first target segment 10 and the second target segment 11.
  • the target segments are in contact with each other.
  • the first target segment 10 and the second target segment 11 may be bonded to a backing plate using a bonding element, such as, e.g., In, Ag epoxy or an elastomer, to hold them into position.
  • a bonding element such as, e.g., In, Ag epoxy or an elastomer
  • the backing plate consists essentially of Cu.
  • the first target segment 10 and the second target segment 11 may expose at least one surface each to allow material from each target segment to be sputtered.
  • the exposed surface of the first target segment 10 and the exposed surface of the second target segment 11 may be elongated and have a major and a minor direction.
  • the major direction may be perpendicular to the minor direction.
  • the first target segment 10 and the second target segment 11 may be juxtaposed along the major direction. The juxtaposition may, but need not, be along a line that extends in the major direction.
  • additional target segments may, but need not, be present.
  • An additional target segment may be situated in between the first target segment 10 and the second target segment 11 , or such that the first target segment 10 is situated in between the additional target segment and the second target segment 11 , or such that the second target segment 11 is situated in between the first target segment 10 and the additional target segment.
  • planar sputter target may range from smaller dimensions, such as, e.g., 488 mm x 88 mm x 15 mm, to larger sizes suitable for, e.g., jumbo coaters, such as 152 inches x 11 inches x 1.3 inches.
  • the described planar sputter target 1 is, however, not limited to any specific dimensions.
  • the coating layer may be deposited by a system comprising a sputter coating device, wherein the planar sputter target may be mounted to deposit a layer on a substrate.
  • the substrate may be translated in a direction T in relation to the planar sputter target 1.
  • the substrate translation may be achieved using a translation mechanism, such as, e.g., a conveyer belt, rollers or a substrate carrier.
  • the layer of the coating 13 in Figs 1a-1b is formed by Physical Vapor Deposition (PVD), such as magnetron sputtering.
  • PVD Physical Vapor Deposition
  • the substrate is translated relative to the planar sputter target 1.
  • the translation may occur by translating the substrate while the position of the planar sputter target is fixed.
  • the substrate is held fixed and the planar sputter target is translated.
  • the substrate is translated while the position of the planar sputter target is fixed.
  • the substrate may be translating parallell, or close to parallell, to the minor direction of the planar sputter target.
  • a fixed point on the translating substrate may be initially exposed to material sputtered substantially from the first target segment 10.
  • the fixed point on the substrate is translated closer to the second target segment 11 , the fixed point may be exposed to material sputtered from both the first target segment 10 and the second target segment 11 , and finally, substantially from the second target segment 11.
  • the deposited layer may be a layer comprising, with increasing distance from the substrate, substantially only material from the first target segment 10, a compostion gradient layer with material from the first target segment 10 and material from the second target segment 11 , and substantially only material from the second target segment 11.
  • the deposited layer may, but need not, form a continuous layer onto the substrate or a layer already deposited on the substrate.
  • additional layers may be deposited onto the substrate.
  • layers are dielectric layers based on oxides or nitrides, or functional metal layers.
  • Additional layers may be deposited onto the functional metal layer coating 13. Examples of such layers are dielectric layers based on oxides or nitrides, or functional metal layers.
  • the PVD system in which the deposition of layers take place may have a base pressure of about 10 2 Pa or below.
  • a typical pressure in the PVD system when using a sputtering gas, such as Ar, is typically in the range of 0.1 to 2 Pa.
  • the substrate is not intentionally heated during deposition of the layer.
  • Figs. 2a-2b schematically illustrate a top view and a cross-sectional view, respectively of a sputtering arrangement for depositing a coating 13 on a substrate 12.
  • the arrangement comprises a first sputter target 1 , which is formed of a pair of elongated sputter target segments 10, 11.
  • Each of the sputter target segments 10, 11 has a major direction and a minor direction, where the minor direction is perpendicular to the major direction and parallel with a direction of movement of the substrate, as indicated by the arrow in Fig. 2a.
  • the first sputter target 1 may be formed in accordance with the sputter target described with reference to Figs. 1 a-1 b.
  • At least one second sputter target 2 may be provided immediately downstream of the first sputter target 1 , as seen along the direction of movement as indicated in Fig. 2a.
  • the second sputter target 2 may thus be separated from the first sputter target 1.
  • the separation between the first planar sputter target 1 and the second planar sputter target 2 may preferably be of the order of about 1- 1000 mm, more preferably 5-500 mm, and most preferably 10-100 mm.
  • the described arrangement is, however, not limited to any specific separation between the first planar sputter target 1 and the second planar sputter target 2.
  • the second sputter target 2 may be a homogeneous sputter target, which may comprise the same material as the second sputter target segment 11 described with reference to Figs. 1a-1b.
  • the second sputter target 2 may be operated jointly with the first sputter target 1.
  • the sputter arrangement illustrated in Figs. 2a-2b may be operated similarly to the one illustrated and described with reference to Figs. 1 a-1 b, with the addition that the second sputter target 2 may be operated as well, such that additional material, in particular having the same composition as that of the second sputter target segment 11 , may be deposited from the second sputter target 2 immediately following deposition from the first sputter target 1.
  • a coating 13 may be formed on the transparent substrate 12.
  • the thickness of the coating 13 may prefereably be 4-20 nm, more preferably 5-15 nm, most preferably 6-12 nm.
  • the described coating is, however, not limited to any specific thickness.
  • the coating 13 may be a functional metal layer comprising three layer sections, including, in the direction outward from the transparent substrate 12, a first homogeneous composition layer zone 14, a gradient composition layer zone 15, covering and in direct contact with the first homogeneous composition layer zone 14, and a second homogeneous composition layer zone 16, covering and in direct contact with the gradient composition layer zone 15.
  • the first homogeneous composition layer zone 14 and the second homogeneous composition layer zone 16 may each consist of a majority of Ag or Ag alloy.
  • the alloying agent content of the first homogeneous composition layer zone 14 may be higher than the alloying agent content of the second homogeneous composition layer zone 16, or the alloying agent content of the first homogeneous composition layer zone 14 may be lower than the alloying agent content of the second homogeneous composition layer zone 16.
  • the gradient composition layer zone 15 may have an alloying agent content that is substantially the same as the first homogeneous composition layer zone 14 where the first homogeneous composition layer zone 14 and the gradient composition layer zone 15 are in direct contact with each other.
  • the gradient composition layer zone 15 may have an alloying agent content that is substantially the same as the second homogeneous composition layer zone 16 where the second homogeneous composition layer zone 16 and the gradient composition layer zone 15 are in direct contact with each other.
  • the alloying agent content within the gradient composition layer zone 15 may be transient.
  • FIG. 4 A non-limiting example of the distribution of the alloying agent content for the coating subsequent to operation of the planar sputter target according to Fig. 1 and the dual planar sputter target arrangement according to Fig. 2 is schematically illustrated in Fig. 4, wherein the functional metal Ag alloy layer thickness measured in the direction outward from the transparent substrate in nanometers is represented on the horizontal axis, and wherein the alloying agent content in at.% is represented on the vertical axis.
  • the solid line denoted “L1” in fig. 4 represents the alloying agent content of a coating layer deposited from a homogeneous alloy target, where the alloying agent is evenly distributed in the entire coating layer.
  • FIG. 4 represents the alloying agent content of coating layer deposited from a single planar sputter target arrangement according to Fig. 1 consisting of a first sputter target segment 10 and a second sputter target segment 11 , wherein the first sputter target segment 10 consists of a Ag alloy with an alloying agent content of 0.4 at.%, and wherein the second sputter target segment 11 consists of Ag.
  • the dotted line denoted “L3” in fig. 4 represents an alternative to the case just described, wherein the second sputter target segment 11 instead consists of a second Ag alloy with a second alloying agent content of 0.4 at.%.
  • the first alloying agent content is depicted by the dashed line and the second alloying agent content is depicted by the dotted line.
  • the dash-dotted line denoted “L4” in fig. 4 represents the alloying agent content of a coating deposited from a dual sputter target arrangement according to Fig. 2 consisting of a first planar sputter target 1 and a second planar sputter target 2, wherein the first sputter target segment 10 consists of a first Ag alloy with a first alloying agent content of 0.4 at.%, and wherein the second sputter target segment 11 consists of Ag, and wherein the second planar sputter target 2 consists of Ag.
  • the distribution of the alloying agent differs depending on the target arrangement being used. This means that specific growth stages of the functional metal coating layer formation can be targeted with a specific Ag alloy.

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Abstract

The present document discloses a planar sputter target comprising at least a first target segment comprising a Ag alloy. The Ag alloy consists essentially of Ag and an alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, wherein an alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.%, of the Ag alloy.

Description

SEGMENTED PLANAR SPUTTERING TARGET AND METHODS FOR
USING THE SAME
Technical Field
The present disclosure relates to a segmented sputtering target and to methods of using the same for deposition of coatings on a substrate. The sputtering targets, systems and methods of the disclosure find particular use in the deposition of coatings on glazings, such as window or vehicle glass.
Background Glazings with a high visible transmittance and high infrared (IR) reflectance are desirable in many applications, allowing light in the visible portion of the electromagnetic spectrum to pass through the glazing while reflecting IR radiation to reduce heat transfer through the glazing.
Common types of glazings that are used in architectural applications include clear and tinted float glass, tempered glass, laminated glass as well as a variety of coated glasses, all of which can be glazed singly or as double, or even triple, glazing units.
It is known to provide coatings on window glass or vehicle glass in order to reduce heat loss through the glazing, while still allowing visible light to pass through. The most efficient type of coating comprises multiple thin layer of which at least one is a functional metal layer, which typically is made of silver (Ag) owing to its high electrical conductivity resulting in high IR reflectivity characteristics.
The optical and electrical properties of the glazing are directly related to the material used as a functional metal layer, thickness of the functional metal layer and the quality of the functional metal layer in terms of, e.g., crystallinity, grain size and interfacial roughness.
Formation of the Ag functional metal layer occurs through multiple growth stages, such as nucleation, coalescence and hole filling. Process parameters during deposition can be tailored to affect the different growth stages to affect, e.g., the quality of the functional metal layer in order achieve improved electrical and optical properties.
PCT/EP2019/078654 teaches the use of functional metal Ag alloy layer(s) instead of unalloyed Ag functional metal layer(s) to improve upon on the electrical and optical properties of the glazing.
The use of Ag alloys is a way to alter the layer formation of unalloyed Ag functional metal layers. By only affecting specific growth stages with a specific Ag alloy the electrical and optical properties of a functional metal layer can be improved.
To achieve the above using multiple material sources would add substantial complexity to the process control and would not be cost effective on an industrial scale.
A particular challenge is to enable the formation of a functional metal layer where specific parts of the functional metal layer are formed with at least one Ag alloy in a way that is cost effective on an industrial scale.
Summary
It is an object of the present disclosure to provide an improved planar sputter target, and in particular a planar sputter target which alleviates or eliminates at least some of the challenges mentioned by way of introduction.
A further object is to provide a use of a planar sputter target. Additional objects are to provide a system comprising a planar sputter target, a use of a system comprising a planar sputter target for coating a window glass or vehicle glass, and a method of forming a coating layer on a substrate.
The invention is defined by the appended independent claims. Embodiments are set forth in the dependent claims, in the following description and in the drawings.
According to a first aspect there is provided a planar sputter target, comprising at least a first sputter target segment. The first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta W, Pt and Au. A first alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the first sputter target segment, the rest being Ag.
By “planar sputter target” is herein meant a planar body of material sized and adapted for use as source material for vapor deposition processes such as magnetron sputtering.
By “consists essentially of” is herein meant that the target material consists essentially of, or consists of, Ag or Ag and an alloying agent. The Ag alloy material may contain substantially only elemental Ag or Ag and the alloying agent, but it also may contain insubstantial or incidental amounts of impurities ordinarily associated with Ag and the alloying agent, and may also contain incidental insubstantial or substantial amounts of materials that do not materially affect the basic and novel characteristics of the Ag or Ag alloy.
As a non-limiting example, the Ag alloy target material may contain less than 0.1 wt.%, preferably less than 0.05 wt.%, most preferably less than 0.01 wt.% of other components, such as incidental impurites.
The alloying agent content is herein calculated as a ratio of the alloying agent to the sum of the amounts of the Ag and the alloying agent. This means that possible incidental impurities are not included in the alloying agent content.
The first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.%, of the first Ag alloy, the rest being Ag.
The planar sputter target may further comprise a second sputter target segment comprising a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al,
Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta W, Pt and Au. A second alloying agent content may be 0.02- 0.50 at.%, preferably 0.06-0.30 at.% of the second Ag alloy, the rest being Ag.
The second alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.% of the second Ag alloy, the rest being Ag.
The planar sputter target may further comprise a second sputter target segment, wherein the second sputter target segment consists essentially of Ag.
The first sputter target segment and the second sputter target segment may be juxtaposed.
The planar sputter target may present an active sputter surface, wherein said active sputter surface comprises at least one exposed surface of the first sputter target segment and at least one exposed surface of the second sputter target segment.
The active sputter surface may be elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the sputter target segments may be juxtaposed along a line which extends along the major direction.
According to a second aspect there is provided a use of a planar sputter target for coating a window glass or vehicle glass.
According to a third aspect there is provided a system comprising a sputter coating device, a planar sputter target, said planar sputter target being operably arranged in the sputter coating device, and a movement device, configured to cause a substrate and said planar sputter target to move relative to each other along a movement direction.
The planar sputter target may be arranged such that a point on the substrate is first deposited from the first sputter target segment and said point is subsequently deposited from the second sputter target segment. According to a fourth aspect there is provided a use of a system for coating a window glass or vehicle glass.
According to a fifth aspect there is provided a method of sputtering at least part of a coating on a substrate, the method comprises providing a planar sputter target comprising, at least a first sputter target target segment. The first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr,
Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta W, Pt and Au. A first alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the first sputter target segment, the rest being Ag. Sputtering the target while causing the substrate to move relative to the target, so as to form a coating layer on the substrate.
The first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.%, of the first Ag alloy, the rest being Ag.
A second sputter target segment may comprise a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta W, Pt and Au. A second alloying agent content may be 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the second Ag alloy, the rest being Ag.
The second alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.% of the second Ag alloy, the rest being Ag. The method may further include providing a second sputter target segment consisting essentially of Ag.
The method may further include providing the first sputter target segment and the second sputter target segment juxtaposed.
The target and the substrate may be moved relative to each other in a movement direction, such that a point on the substrate may be first deposited substantially from the first sputter target segment and said point may be subsequently deposited substantially from the second sputter target segment.
A movement direction may be substantially linear and wherein a distance between the planar sputter target and the substrate, taken along a direction normal to a substrate surface, may be substantially constant.
The sputter target may present an active sputter surface, which is elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the movement direction may be substantially parallel with the minor direction.
The first and second sputter target segments may be juxtaposed along a line which extends along the major direction.
The method may be applied for coating a window glass or vehicle glass.
According to a sixth aspect, there is provided a dual planar sputter target arrangement, comprising a first planar sputter target and a second planar sputter target, wherein the the first planar sputter target comprises at least a first sputter target segment and a second sputter target segment, wherein the first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr,
Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and, wherein a first alloying agent content is 0.02-3.00 at.%, preferably 0.10-1.50 at.% of the first Ag alloy, the rest being Ag, wherein the second sputter target segment consists essentially of Ag, and wherein the second planar sputter target consists essentially of Ag. The first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56- 0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70-0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84- 0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98-1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1 .08-1 .10 at.%, 1.10-1.12 at.%, 1.12- 1.14 at.%, 1.14-1.16 at.%, 1 .16-1 .18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26-1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40- 1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54-1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68- 1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82-1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96- 1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10-2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24- 2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38-2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52- 2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66-2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80- 2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94-2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the first Ag alloy, the rest being Ag.
The sputter target segments may present a respective active sputter surface, which is elongated with a major direction and a minor direction, and wherein the first sputter target segment and the second sputter target segment are juxtaposed along the major direction.
The second planar sputter target may present an active sputter surface, which is elongated with a major direction and a minor direction, wherein the second planar sputter target is separated from the first planar sputter target and arranged with its major direction parallel with the major direction of the first and second sputter target segments.
According to a seventh aspect, there is provided use of a dual planar sputter target arrangement as described above for coating a window glass or vehicle glass.
According to an eighth aspect there is provided a system comprising a sputter coating device, a dual planar sputter target arrangement, said dual planar sputter target arrangement being operably arranged in the sputter coating device, and a movement device, configured to cause a substrate and said dual planar sputter target arrangement to move relative to each other along a movement direction.
The dual planar sputter target arrangement may be arranged such that a point on the substrate is first deposited from the first sputter target segment, said point is subsequently deposited from the second sputter target segment, and said point is subsequently deposited from the second planar sputter target.
According to a ninth aspect there is provided a use of a system for coating a window glass or a vehicle glass.
According to a tenth aspect, there is provided a method of sputtering at least part of a coating on a substrate, the method comprising providing a transparent substrate, providing a first planar sputter target comprising, at least a first sputter target target segment and a second sputter target segment, providing a second planar sputter target, such that the first sputter target segment comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn,
Sb, Hf, Ta, W, Pt and Au, and, such that a first alloying agent content is 0.02- 3.00 at.%, preferably 0.10-1 .50 at.% of the Ag alloy, the rest being Ag, and, such that the second sputter target segment consists essentially of Ag, and such that the second planar sputter target consists essentially of Ag, and sputtering the first planar sputter target and the second planar sputter target while causing the transparent substrate to move relative to the planar sputter targets, so as to form a coating layer on the substrate.
The first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56- 0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70-0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84- 0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98-1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1 .08-1 .10 at.%, 1.10-1.12 at.%, 1.12- 1.14 at.%, 1.14-1.16 at.%, 1 .16-1 .18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26-1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40- 1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54-1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68- 1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82-1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96- 1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10-2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24- 2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38-2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52- 2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66-2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80- 2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94-2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the first Ag alloy, the rest being Ag.
The targets and the substrate may be moved relative to each other in a movement direction, such that a point on the substrate is first deposited substantially from the first sputter target segment, said point is subsequently deposited substantially from the second sputter target segment, and said point is finally deposited substantially from the second planar sputter target.
The method may further comprise arranging the first sputter target segment and the second sputter target segment to be juxtaposed in a direction parallel with the movement direction.
The movement direction may be substantially linear and wherein a distance between the first planar sputter target and the transparent substrate , and a distance between the second planar sputter target and the transparent substrate, taken along a direction normal to a substrate surface, is substantially constant.
The first planar sputter target and the second planar sputter target may present active sputter surfaces, which are elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and the movement direction may be substantially parallel with the minor direction.
According to an eleventh aspect, there is provided a method of coating a window glass or vehicle glass, comprising the method as described above. According to a twelvth aspect, there is provided a glazing in the form of a window glass or vehicle glass, comprising a transparent substrate, and a coating, comprising a functional metal layer, comprising, in order outward from the transparent substrate: a first composition layer zone, a gradient composition layer zone, covering and in direct contact with the first composition layer zone, and a second composition layer zone, covering and in direct contact with the gradient composition layer zone, wherein the first composition layer zone and the second composition layer zone each consist of a majority of Ag or Ag alloy.
The first composition layer zone may comprise a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and a first alloying agent content may be 0.02-3.00 at.%, preferably 0.10-1 .50 at.% of the first Ag alloy, the rest being Ag.
The first alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56- 0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70-0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84- 0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98-1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1 .08-1 .10 at.%, 1.10-1.12 at.%, 1.12- 1.14 at.%, 1.14-1.16 at.%, 1 .16-1 .18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26-1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40- 1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54-1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68- 1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82-1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96- 1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10-2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24- 2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38-2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52- 2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66-2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80- 2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94-2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the first Ag alloy, the rest being Ag.
The second composition layer zone may comprise a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and a second alloying agent content may be 0.02-3.00 at.%, preferably 0.10-1 .50 at.% of the second Ag alloy, the rest being Ag.
The second alloying agent content may be selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28- 0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56- 0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70-0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at. %, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84- 0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98-1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1 .08-1 .10 at.%, 1.10-1.12 at.%, 1.12- 1.14 at.%, 1.14-1.16 at.%, 1 .16-1 .18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26-1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40- 1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54-1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68- 1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82-1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96- 1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10-2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24- 2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38-2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52- 2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66-2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80- 2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94-2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the second Ag alloy, the rest being Ag.
The first alloying agent content of the first composition layer zone may deviate less than 45 %, preferably less than 30 %, more preferably less than 15 % from an average value of the first alloying agent content of the first composition layer zone, the second alloying agent content of the second composition layer zone may deviate less than 45 %, preferably less than 30 %, more preferably less than 15 % from an average value of the second alloying agent content of the second composition layer zone, and the average value of the first alloying agent content of the first composition layer zone and the average value of the second alloying agent content of the second composition layer zone may be different from each other.
The average value of the first alloying agent content of the first composition layer zone may be higher than the average value of the second alloying agent content of the second composition layer zone.
The second composition layer zone may consist essentially of Ag.
Brief Description of the Drawings
Figs. 1a-1b schematically illustrate a non-limiting example of a planar sputter target used to sputter a layer on a substrate.
Figs. 2a-2b schematically illustrate a non-limiting example of two planar sputter targets used to sputter a layer on a substrate.
Fig. 3 schematically illustrates a non-limiting example of a coating sputtered on a substrate.
Fig. 4 schematically illustrates the alloying content of different target arrangements.
Detailed Description
The concept disclosed herein will now be explained in more detail. Initially, the structure of a planar target is described, thereafter a system for using such a planar target is described. Finally, the method of using such a planar target to sputter a at least part of a coating on a substrate is described.
In Figs 1 a-1 b, a non-limiting example of a structure of a planar sputter target 1 containing two sputter target segments is schematically illustrated. The planar sputter target 1 comprises a first sputter target segment 10 and a second sputter target segment 11.
Fig. 1a illustrates the sputter target 1 and substrate 12, 13 in a planar view from above.
Fig. 1b illustrates the sputter target 1 and the substrate 12, 13 in a cross-sectional view. The first sputter target segment 10 may be a homogeneous body of target material. The target material is a Ag alloy. The Ag alloy is Ag alloyed with an alloying agent selected from a group consisting of Li, C, Na, Mg, Al,
Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au.
The second sputter target segment 11 may be a homogeneous body of target material. The target material may be Ag, or a second Ag alloy.
The second Ag alloy may be Ag alloyed with an alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe,
Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au. The alloying agent content of the second Ag alloy may be lower, the same or higher than the Ag alloy.
The first target segment 10 and the second target segment 11 may be juxtaposed.
The first target segment 10 and the second target segment 11 may, but need not, be in contact with each other. The first target segment 10 and the second target segment 11 may be separated with a distance from each other or by at least one additional target segment situated in between the first target segment 10 and the second target segment 11. Preferably, the target segments are in contact with each other.
The first target segment 10 and the second target segment 11 may be bonded to a backing plate using a bonding element, such as, e.g., In, Ag epoxy or an elastomer, to hold them into position. Preferably, the backing plate consists essentially of Cu.
The first target segment 10 and the second target segment 11 may expose at least one surface each to allow material from each target segment to be sputtered.
The exposed surface of the first target segment 10 and the exposed surface of the second target segment 11 may be elongated and have a major and a minor direction. The major direction may be perpendicular to the minor direction. The first target segment 10 and the second target segment 11 may be juxtaposed along the major direction. The juxtaposition may, but need not, be along a line that extends in the major direction.
In addition to the first target segment 10 and the second target segment 11 , additional target segments may, but need not, be present. An additional target segment may be situated in between the first target segment 10 and the second target segment 11 , or such that the first target segment 10 is situated in between the additional target segment and the second target segment 11 , or such that the second target segment 11 is situated in between the first target segment 10 and the additional target segment.
The dimensions of the planar sputter target may range from smaller dimensions, such as, e.g., 488 mm x 88 mm x 15 mm, to larger sizes suitable for, e.g., jumbo coaters, such as 152 inches x 11 inches x 1.3 inches. The described planar sputter target 1 is, however, not limited to any specific dimensions.
System and method for production of the coating
The coating layer may be deposited by a system comprising a sputter coating device, wherein the planar sputter target may be mounted to deposit a layer on a substrate. The substrate may be translated in a direction T in relation to the planar sputter target 1. The substrate translation may be achieved using a translation mechanism, such as, e.g., a conveyer belt, rollers or a substrate carrier.
The layer of the coating 13 in Figs 1a-1b is formed by Physical Vapor Deposition (PVD), such as magnetron sputtering.
To form a layer, or part of a layer, onto the substrate 12, the substrate is translated relative to the planar sputter target 1. The translation may occur by translating the substrate while the position of the planar sputter target is fixed. Alternatively the the substrate is held fixed and the planar sputter target is translated. Preferably, the substrate is translated while the position of the planar sputter target is fixed.
The substrate may be translating parallell, or close to parallell, to the minor direction of the planar sputter target. In the non-limiting example provided in Figs1a-1b, a fixed point on the translating substrate may be initially exposed to material sputtered substantially from the first target segment 10. As the fixed point on the substrate is translated closer to the second target segment 11 , the fixed point may be exposed to material sputtered from both the first target segment 10 and the second target segment 11 , and finally, substantially from the second target segment 11.
The deposited layer may be a layer comprising, with increasing distance from the substrate, substantially only material from the first target segment 10, a compostion gradient layer with material from the first target segment 10 and material from the second target segment 11 , and substantially only material from the second target segment 11.
The deposited layer may, but need not, form a continuous layer onto the substrate or a layer already deposited on the substrate.
Prior to deposition of the functional metal layer coating 13, additional layers may be deposited onto the substrate. Examples of such layers are dielectric layers based on oxides or nitrides, or functional metal layers.
Additional layers may be deposited onto the functional metal layer coating 13. Examples of such layers are dielectric layers based on oxides or nitrides, or functional metal layers.
As an example, for deposition of the functional metal layer, the PVD system in which the deposition of layers take place may have a base pressure of about 102 Pa or below. A typical pressure in the PVD system when using a sputtering gas, such as Ar, is typically in the range of 0.1 to 2 Pa.
Typically, the substrate is not intentionally heated during deposition of the layer.
Figs. 2a-2b schematically illustrate a top view and a cross-sectional view, respectively of a sputtering arrangement for depositing a coating 13 on a substrate 12. The arrangement comprises a first sputter target 1 , which is formed of a pair of elongated sputter target segments 10, 11. Each of the sputter target segments 10, 11 has a major direction and a minor direction, where the minor direction is perpendicular to the major direction and parallel with a direction of movement of the substrate, as indicated by the arrow in Fig. 2a.
The first sputter target 1 may be formed in accordance with the sputter target described with reference to Figs. 1 a-1 b.
At least one second sputter target 2 may be provided immediately downstream of the first sputter target 1 , as seen along the direction of movement as indicated in Fig. 2a.
The second sputter target 2 may thus be separated from the first sputter target 1. The separation between the first planar sputter target 1 and the second planar sputter target 2 may preferably be of the order of about 1- 1000 mm, more preferably 5-500 mm, and most preferably 10-100 mm. The described arrangement is, however, not limited to any specific separation between the first planar sputter target 1 and the second planar sputter target 2.
The second sputter target 2 may be a homogeneous sputter target, which may comprise the same material as the second sputter target segment 11 described with reference to Figs. 1a-1b. The second sputter target 2 may be operated jointly with the first sputter target 1.
The sputter arrangement illustrated in Figs. 2a-2b may be operated similarly to the one illustrated and described with reference to Figs. 1 a-1 b, with the addition that the second sputter target 2 may be operated as well, such that additional material, in particular having the same composition as that of the second sputter target segment 11 , may be deposited from the second sputter target 2 immediately following deposition from the first sputter target 1.
Referring to Fig. 3, subsequent to operation of the planar sputter target (1) according to Fig. 1 or the dual planar sputter target arrangement according to Fig. 2, a coating 13 may be formed on the transparent substrate 12. The thickness of the coating 13 may prefereably be 4-20 nm, more preferably 5-15 nm, most preferably 6-12 nm. The described coating is, however, not limited to any specific thickness. The coating 13 may be a functional metal layer comprising three layer sections, including, in the direction outward from the transparent substrate 12, a first homogeneous composition layer zone 14, a gradient composition layer zone 15, covering and in direct contact with the first homogeneous composition layer zone 14, and a second homogeneous composition layer zone 16, covering and in direct contact with the gradient composition layer zone 15. The first homogeneous composition layer zone 14 and the second homogeneous composition layer zone 16 may each consist of a majority of Ag or Ag alloy. The alloying agent content of the first homogeneous composition layer zone 14 may be higher than the alloying agent content of the second homogeneous composition layer zone 16, or the alloying agent content of the first homogeneous composition layer zone 14 may be lower than the alloying agent content of the second homogeneous composition layer zone 16. The gradient composition layer zone 15 may have an alloying agent content that is substantially the same as the first homogeneous composition layer zone 14 where the first homogeneous composition layer zone 14 and the gradient composition layer zone 15 are in direct contact with each other. The gradient composition layer zone 15 may have an alloying agent content that is substantially the same as the second homogeneous composition layer zone 16 where the second homogeneous composition layer zone 16 and the gradient composition layer zone 15 are in direct contact with each other. The alloying agent content within the gradient composition layer zone 15 may be transient.
A non-limiting example of the distribution of the alloying agent content for the coating subsequent to operation of the planar sputter target according to Fig. 1 and the dual planar sputter target arrangement according to Fig. 2 is schematically illustrated in Fig. 4, wherein the functional metal Ag alloy layer thickness measured in the direction outward from the transparent substrate in nanometers is represented on the horizontal axis, and wherein the alloying agent content in at.% is represented on the vertical axis. The solid line denoted “L1” in fig. 4 represents the alloying agent content of a coating layer deposited from a homogeneous alloy target, where the alloying agent is evenly distributed in the entire coating layer. The dashed line denoted “L2” in fig. 4 represents the alloying agent content of coating layer deposited from a single planar sputter target arrangement according to Fig. 1 consisting of a first sputter target segment 10 and a second sputter target segment 11 , wherein the first sputter target segment 10 consists of a Ag alloy with an alloying agent content of 0.4 at.%, and wherein the second sputter target segment 11 consists of Ag. The dotted line denoted “L3” in fig. 4 represents an alternative to the case just described, wherein the second sputter target segment 11 instead consists of a second Ag alloy with a second alloying agent content of 0.4 at.%. In this case, the first alloying agent content is depicted by the dashed line and the second alloying agent content is depicted by the dotted line. The dash-dotted line denoted “L4” in fig. 4 represents the alloying agent content of a coating deposited from a dual sputter target arrangement according to Fig. 2 consisting of a first planar sputter target 1 and a second planar sputter target 2, wherein the first sputter target segment 10 consists of a first Ag alloy with a first alloying agent content of 0.4 at.%, and wherein the second sputter target segment 11 consists of Ag, and wherein the second planar sputter target 2 consists of Ag. As can be seen in Fig. 4 the distribution of the alloying agent differs depending on the target arrangement being used. This means that specific growth stages of the functional metal coating layer formation can be targeted with a specific Ag alloy.

Claims

1 . A planar sputter target (1 ), comprising: at least a first sputter target segment (10), wherein the first sputter target segment (10) comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and, wherein a first alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the first sputter target segment, the rest being Ag.
2. The planar sputter target (1 ) as claimed in claim 1 , wherein the first alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12- 0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40- 0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.%, of the first Ag alloy, the rest being Ag.
3. The planar sputter target as claimed in any of claims 1 or 2, further comprising a second sputter target segment (11 ) comprising a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, wherein a second alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the second Ag alloy, the rest being Ag.
4. The planar sputter target (1 ) as claimed in claim 3, wherein the second alloying agent content is selected from a group consisting of 0.02- 0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at. %, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30- 0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.% of the second Ag alloy, the rest being Ag.
5. The planar sputter target as claimed in any of claims 1 or 2, further comprising a second sputter target segment (11 ), wherein the second sputter target segment (11 ) consists essentially of Ag.
6. The planar sputter target as claimed in any one of claims 3 to 5, wherein the first sputter target segment (10) and the second sputter target segment (11 ) are juxtaposed.
7. The planar sputter target as claimed in any one of claims 3 to 6, wherein the planar sputter target presents an active sputter surface, wherein said active sputter surface comprises at least one exposed surface of the first sputter target segment (10) and at least one exposed surface of the second sputter target segment (11 ).
8. The planar sputter target as claimed in claim 7, wherein the active sputter surface is elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the sputter target segments are juxtaposed along a line which extends along the major direction.
9. Use of a planar sputter target as claimed in any one of the preceding claims, for coating a window glass or vehicle glass.
10. A system comprising: a sputter coating device, a planar sputter target, as claimed in any one of the preceding claims, said planar sputter target being operably arranged in the sputter coating device, and a movement device, configured to cause a substrate and said planar sputter target to move relative to each other along a movement direction.
11. The system as claimed in claim 10, wherein the planar sputter target is arranged such that a point on the substrate is first deposited from the first sputter target segment (10) and said point is subsequently deposited from the second sputter target segment (11 ).
12. Use of a system as claimed in claim 10 or 11 , for coating a window glass or vehicle glass.
13. A method of sputtering at least part of a coating on a substrate, the method comprising: providing a planar sputter target (1) comprising, at least a first sputter target target segment (10), such that the first sputter target segment (10) comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and, such that a first alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the first sputter target segment, the rest being Ag, and, sputtering the target while causing the substrate to move relative to the target, so as to form a coating layer on the substrate.
14. The method according to claim 13, wherein the first alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14- 0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42- 0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.%, of the first Ag alloy, the rest being Ag.
15. The method as claimed in claim 13 or 14, further providing a second sputter target segment (11) comprising a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, wherein a second alloying agent content is 0.02-0.50 at.%, preferably 0.06-0.30 at.% of the second Ag alloy, the rest being Ag.
16. The method as claimed in claim 15, wherein the second alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14- 0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42- 0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.% and 0.48-0.50 at.% of the second Ag alloy, the rest being Ag.
17. The method as claimed in claim 13 or 14, further providing a second sputter target segment (11 ) consisting essentially of Ag.
18. The method as claimed in any one of claims 13 to 17, further providing the first sputter target segment (10) and the second sputter target segment (11 ) to be juxtaposed.
19. The method as claimed in any one of claims 13 to 18, wherein the target and the substrate are moved relative to each other in a movement direction, such that a point on the substrate is first deposited substantially from the first sputter target segment (10) and said point is subsequently deposited substantially from the second sputter target segment (11 ).
20. The method as claimed in claim 19, wherein the movement direction is substantially linear and wherein a distance between the planar sputter target (1) and the substrate, taken along a direction normal to a substrate surface, is substantially constant.
21. The method as claimed in claim 19 or 20, wherein the sputter target presents an active sputter surface, which is elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the movement direction is substantially parallel with the minor direction.
22. The method as claimed in claim 21 , wherein the first and second sputter target segments are juxtaposed along a line which extends along the major direction.
23. A method of coating a window glass or vehicle glass, comprising the method as claimed in any one of claims 13-22.
24. A dual planar sputter target arrangement, comprising: a first planar sputter target (1) and a second planar sputter target (2), wherein the the first planar sputter target (1 ) comprises at least a first sputter target segment (10) and a second sputter target segment (11), wherein the first sputter target segment (10) comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and, wherein a first alloying agent content is 0.02-3.00 at.%, preferably 0.10-1.50 at.% of the first Ag alloy, the rest being Ag, wherein the second sputter target segment (11 ) consists essentially of Ag, and wherein the second planar sputter target (2) consists essentially of Ag.
25. The dual planar sputter target arrangement as claimed in claim 24, wherein the first alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at. %, 0.12-0.14 at.%, 0.14-0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20- 0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42-0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48- 0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56-0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70-0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76- 0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84-0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98-1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04- 1.06 at.%, 1.06-1.08 at.%, 1 .08-1 .10 at.%, 1 .10-1 .12 at.%, 1 .12-1 .14 at.%, 1.14-1.16 at.%, 1.16-1.18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26-1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32- 1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40-1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54-1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60- 1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68-1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82-1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88- 1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96-1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10-2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16- 2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24-2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38-2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44- 2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52-2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66-2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72- 2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80-2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94-2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the first Ag alloy, the rest being Ag.
26. The dual planar sputter target arrangement as claimed in claim 24 or 25, wherein the sputter target segments present a respective active sputter surface, which is elongated with a major direction and a minor direction, and wherein the first sputter target segment (10) and the second sputter target segment (11 ) are juxtaposed along the major direction.
27. The dual planar sputter target arrangement as claimed in claim 26, wherein the second planar sputter target (2) presents an active sputter surface, which is elongated with a major direction and a minor direction, wherein the second planar sputter target (2) is separated from the first planar sputter target (1) and arranged with its major direction parallel with the major direction of the first and second sputter target segments (10, 11).
28. Use of a dual planar sputter target arrangement as claimed in any one of claims 24 to 27, for coating a window glass or vehicle glass.
29. A system comprising: a sputter coating device, a dual planar sputter target arrangement, as claimed in any one of claims 24 to 28, said dual planar sputter target arrangement being operably arranged in the sputter coating device, and a movement device, configured to cause a substrate and said dual planar sputter target arrangement to move relative to each other along a movement direction.
30. The system as claimed in claim 29, wherein the dual planar sputter target arrangement is arranged such that a point on the substrate is first deposited from the first sputter target segment (10), said point is subsequently deposited from the second sputter target segment (11), and said point is subsequently deposited from the second planar sputter target (2).
31. Use of a system as claimed in claim 29 or 30, for coating a window glass or vehicle glass.
32. A method of sputtering at least part of a coating on a substrate, the method comprising: providing a transparent substrate (12), providing a first planar sputter target (1) comprising, at least a first sputter target target segment (10) and a second sputter target segment (11), providing a second planar sputter target (2), such that the first sputter target segment (10) comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and such that the first alloying agent content is 0.02-3.00 at.%, preferably 0.10-1.50 at.% of the Ag alloy, the rest being Ag, and such that the second sputter target segment (11 ) consists essentially of Ag, and such that the second planar sputter target (2) consists essentially of Ag, and sputtering the first planar sputter target (1 ) and the second planar sputter target (2) while causing the transparent substrate (12) to move relative to the planar sputter targets, so as to form a coating layer (13) on the substrate.
33. The method according to claim 32, wherein the first alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14- 0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42- 0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%,
0.52-0.54 at.%, 0.54-0.56 at.%, 0.56-0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70- 0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84-0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98- 1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1.08-1.10 at.%, 1.10-1.12 at.%, 1 .12-1 .14 at.%, 1 .14-1 .16 at.%, 1.16-1.18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26- 1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40-1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54- 1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68-1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82- 1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96-1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10- 2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24-2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38- 2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52-2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66- 2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80-2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94- 2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the first Ag alloy, the rest being Ag.
34. The method as claimed in any one of claims 32 to 33, wherein the targets and the substrate are moved relative to each other in a movement direction, such that a point on the substrate is first deposited substantially from the first sputter target segment (10), said point is subsequently deposited substantially from the second sputter target segment (11 ), and said point is finally deposited substantially from the second planar sputter target (2).
35. The method as claimed in claim 34, further comprising arranging the first sputter target segment (10) and the second sputter target segment
(11 ) to be juxtaposed in a direction parallel with the movement direction.
36. The method as claimed in claim 34 or 35, wherein the movement direction is substantially linear and wherein a distance between the first planar sputter target (1) and the transparent substrate (12), and a distance between the second planar sputter target (2) and the transparent substrate (12), taken along a direction normal to a substrate surface, is substantially constant.
37. The method as claimed in claim 35 or 36, wherein the first planar sputter target (1 ) and the second planar sputter target (2) present active sputter surfaces, which are elongated, presenting a major direction and a minor direction, which is perpendicular to the major direction, and wherein the movement direction is substantially parallel with the minor direction.
38. A method of coating a window glass or vehicle glass, comprising the method as claimed in any one of claims 32 to 37.
39. A glazing in the form of a window glass or vehicle glass, comprising: a transparent substrate (12), and a coating (13), comprising a functional metal layer, comprising, in order outward from the transparent substrate (12): a first composition layer zone (14), a gradient composition layer zone (15), covering and in direct contact with the first composition layer zone (14), and a second composition layer zone (16), covering and in direct contact with the gradient composition layer zone (15), wherein the first composition layer zone (14) and the second composition layer zone (16) each consist of a majority of Ag or Ag alloy.
40. The glazing as claimed in claim 39, wherein the first composition layer zone (14) comprises a first Ag alloy consisting essentially of Ag with a first alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn,
Sb, Hf, Ta, W, Pt and Au, and wherein a first alloying agent content is 0.02-3.00 at.%, preferably 0.10-1 .50 at.% of the first Ag alloy, the rest being Ag.
41. The glazing as claimed in claim 40, wherein the first alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14- 0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at.%, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42- 0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56-0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70- 0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84-0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98- 1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1.08-1.10 at.%, 1.10-1.12 at.%, 1 .12-1 .14 at.%, 1 .14-1 .16 at.%, 1.16-1.18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26- 1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40-1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at. %, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54- 1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68-1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82- 1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96-1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10- 2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24-2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38- 2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52-2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66- 2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80-2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94- 2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the first Ag alloy, the rest being Ag.
42. The glazing as claimed in any of claims 39 to 41 , wherein the second composition layer zone (16) comprises a second Ag alloy consisting essentially of Ag with a second alloying agent selected from a group consisting of Li, C, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Rh, Pd, In, Sn, Sb, Hf, Ta, W, Pt and Au, and wherein a second alloying agent content is 0.02-3.00 at.%, preferably 0.10-1.50 at.% of the second Ag alloy, the rest being Ag.
43. The glazing as claimed in claim 42, wherein the second alloying agent content is selected from a group consisting of 0.02-0.04 at.%, 0.04-0.06 at.%, 0.06-0.08 at.%, 0.08-0.10 at.%, 0.10-0.12 at.%, 0.12-0.14 at.%, 0.14- 0.16 at.%, 0.16-0.18 at.%, 0.18-0.20 at.%, 0.20-0.22 at.%, 0.22-0.24 at.%, 0.24-0.26 at.%, 0.26-0.28 at.%, 0.28-0.30 at.%, 0.30-0.32 at.%, 0.32-0.34 at. %, 0.34-0.36 at.%, 0.36-0.38 at.%, 0.38-0.40 at.%, 0.40-0.42 at.%, 0.42- 0.44 at.%, 0.44-0.46 at.%, 0.46-0.48 at.%, 0.48-0.50 at.%, 0.50-0.52 at.%, 0.52-0.54 at.%, 0.54-0.56 at.%, 0.56-0.58 at.%, 0.58-0.60 at.%, 0.60-0.62 at.%, 0.62-0.64 at.%, 0.64-0.66 at.%, 0.66-0.68 at.%, 0.68-0.70 at.%, 0.70- 0.72 at.%, 0.72-0.74 at.%, 0.74-0.76 at.%, 0.76-0.78 at.%, 0.78-0.80 at.%, 0.80-0.82 at.%, 0.82-0.84 at.%, 0.84-0.86 at.%, 0.86-0.88 at.%, 0.88-0.90 at.%, 0.90-0.92 at.%, 0.92-0.94 at.%, 0.94-0.96 at.%, 0.96-0.98 at.%, 0.98- 1.00 at.%, 1.00-1.02 at.%, 1.02-1.04 at.%, 1.04-1.06 at.%, 1.06-1.08 at.%, 1.08-1.10 at.%, 1.10-1.12 at.%, 1 .12-1 .14 at.%, 1 .14-1 .16 at.%, 1.16-1.18 at.%, 1.18-1.20 at.%, 1.20-1.22 at.%, 1.22-1.24 at.%, 1.24-1.26 at.%, 1.26- 1.28 at.%, 1.28-1.30 at.%, 1.30-1.32 at.%, 1.32-1.34 at.%, 1.34-1.36 at.%, 1.36-1.38 at.%, 1.38-1.40 at.%, 1.40-1.42 at.%, 1.42-1.44 at.%, 1.44-1.46 at.%, 1.46-1.48 at.%, 1.48-1.50 at.%, 1.50-1.52 at.%, 1.52-1.54 at.%, 1.54- 1.56 at.%, 1.56-1.58 at.%, 1.58-1.60 at.%, 1.60-1.62 at.%, 1.62-1.64 at.%, 1.64-1.66 at.%, 1.66-1.68 at.%, 1.68-1.70 at.%, 1.70-1.72 at.%, 1.72-1.74 at.%, 1.74-1.76 at.%, 1.76-1.78 at.%, 1.78-1.80 at.%, 1.80-1.82 at.%, 1.82- 1.84 at.%, 1.84-1.86 at.%, 1.86-1.88 at.%, 1.88-1.90 at.%, 1.90-1.92 at.%, 1.92-1.94 at.%, 1.94-1.96 at.%, 1.96-1.98 at.%, 1.98-2.00 at.%, 2.00-2.02 at.%, 2.02-2.04 at.%, 2.04-2.06 at.%, 2.06-2.08 at.%, 2.08-2.10 at.%, 2.10- 2.12 at.%, 2.12-2.14 at.%, 2.14-2.16 at.%, 2.16-2.18 at.%, 2.18-2.20 at.%, 2.20-2.22 at.%, 2.22-2.24 at.%, 2.24-2.26 at.%, 2.26-2.28 at.%, 2.28-2.30 at.%, 2.30-2.32 at.%, 2.32-2.34 at.%, 2.34-2.36 at.%, 2.36-2.38 at.%, 2.38- 2.40 at.%, 2.40-2.42 at.%, 2.42-2.44 at.%, 2.44-2.46 at.%, 2.46-2.48 at.%, 2.48-2.50 at.%, 2.50-2.52 at.%, 2.52-2.54 at.%, 2.54-2.56 at.%, 2.56-2.58 at.%, 2.58-2.60 at.%, 2.60-2.62 at.%, 2.62-2.64 at.%, 2.64-2.66 at.%, 2.66- 2.68 at.%, 2.68-2.70 at.%, 2.70-2.72 at.%, 2.72-2.74 at.%, 2.74-2.76 at.%, 2.76-2.78 at.%, 2.78-2.80 at.%, 2.80-2.82 at.%, 2.82-2.84 at.%, 2.84-2.86 at.%, 2.86-2.88 at.%, 2.88-2.90 at.%, 2.90-2.92 at.%, 2.92-2.94 at.%, 2.94- 2.96 at.%, 2.96-2.98 at.%, and 2.98-3.00 at.%, of the second Ag alloy, the rest being Ag.
44. The glazing as claimed in any of claims 39 to 43, wherein the first alloying agent content of the first composition layer zone deviates less than 45 %, preferably less than 30 %, more preferably less than 15 % from an average value of the first alloying agent content of the first composition layer zone, wherein the second alloying agent content of the second composition layer zone deviates less than 45 %, preferably less than 30 %, more preferably less than 15 % from an average value of the second alloying agent content of the second composition layer zone, and wherein the average value of the first alloying agent content of the first composition layer zone and the average value of the second alloying agent content of the second composition layer zone are different from each other.
45. The glazing as claimed in any of claims 39 to 44, wherein the average value of the first alloying agent content of the first composition layer zone is higher than the average value of the second alloying agent content of the second composition layer zone.
46. The glazing as claimed in any of claims 39 to 41 , wherein the second composition layer zone (16) consists essentially of Ag.
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