WO2021163914A1 - Photosensitive detection circuit, optical signal detection method, device and system, and display device - Google Patents
Photosensitive detection circuit, optical signal detection method, device and system, and display device Download PDFInfo
- Publication number
- WO2021163914A1 WO2021163914A1 PCT/CN2020/075821 CN2020075821W WO2021163914A1 WO 2021163914 A1 WO2021163914 A1 WO 2021163914A1 CN 2020075821 W CN2020075821 W CN 2020075821W WO 2021163914 A1 WO2021163914 A1 WO 2021163914A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- detection
- circuit
- sub
- photosensitive
- signal
- Prior art date
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 514
- 230000003287 optical effect Effects 0.000 title claims description 62
- 230000004044 response Effects 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 238000012886 linear function Methods 0.000 claims description 8
- 238000004590 computer program Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 230000006870 function Effects 0.000 description 10
- 229920006395 saturated elastomer Polymers 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011895 specific detection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
Definitions
- the present disclosure relates to a photosensitive detection circuit, a light signal detection method, device and system, and a display device.
- display devices can convert light of different intensities into photocurrents of different sizes, thereby achieving specific functions (such as fingerprint recognition, touch detection, etc.). For example, there is a difference between the fingerprint valleys, the light source irradiates the hand to produce different intensities of reflected light, and the display device receives different intensities of reflected light to generate different photocurrents, and then the fingerprint pattern can be determined.
- a photosensitive detection circuit includes a photosensitive sub-circuit, an output sub-circuit and a detection sub-circuit.
- the photosensitive sub-circuit is coupled to the reference voltage signal terminal and the detection node, and is configured to sense light intensity, generate an electrical signal, and transmit the electrical signal to the detection node.
- the output sub-circuit is coupled with the scanning voltage signal terminal, the detection node and the output signal terminal.
- the output sub-circuit is configured to be closed under the control of the non-operating level of the scanning voltage signal transmitted by the scanning signal terminal to expose the photosensitive sub-circuit; and open under the control of the operating level of the scanning voltage signal, To transmit the electrical signal to the output signal terminal.
- the detection sub-circuit is coupled to the detection node, the first voltage signal terminal and the detection signal terminal, and is configured to transmit the detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
- the photosensitive sub-circuit includes a photodiode, the first pole of the photodiode is coupled to the reference voltage signal terminal, and the second pole of the photodiode is coupled to the detection node.
- the output sub-circuit includes a switching transistor, the control electrode of the switching transistor is coupled to the scanning voltage signal terminal, the first electrode of the switching transistor is coupled to the detection node, and the second electrode of the switching transistor is coupled to the output signal terminal.
- the detection sub-circuit includes a detection transistor, the control electrode of the detection transistor is coupled to the detection node, the first electrode of the detection transistor is coupled to the first voltage signal terminal, and the second electrode of the detection transistor is coupled to the detection signal terminal. catch.
- an optical signal detection method is provided.
- the optical signal detection method is applied to a photosensitive detection circuit, which includes a photosensitive sub-circuit and an output sub-circuit.
- One detection includes multiple detection periods, and each of the multiple detection periods includes an exposure sub-period and a reset sub-period.
- the level of the scanning voltage signal is controlled to be at a non-operating level, so that the output sub-circuit is closed, and the photosensitive sub-circuit senses the light intensity to generate an electrical signal; in the reset sub-period, the level of the control scanning voltage signal is switched to The working level enables the output sub-circuit to open, the electrical signal is transmitted to the output signal terminal, and the photosensitive sub-circuit is reset.
- the sum of the exposure sub-periods of multiple detection periods is the total exposure time required for one detection.
- the photosensitive detection circuit further includes a detection sub-circuit.
- the optical signal detection method also includes: receiving a detection signal from the detection signal terminal, the detection signal is a signal that the detection sub-circuit transmits to the detection signal terminal in real time in response to the voltage of the detection node; and judging whether the voltage of the detection node reaches a preset value according to the detection signal Voltage; if it is, control the scanning voltage signal to switch from a non-operating level to a working level.
- the preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship.
- the minimum value of the voltage of the detection node is obtained through a calibration test.
- the number of detection periods included in the one detection is 2-20.
- an optical signal detection device in another aspect, includes a processor and a memory, and computer program instructions are stored in the memory.
- the computer program instructions stored in the memory are executed by the processor, the optical signal detection method according to any one of the above embodiments is implemented. One or more steps.
- an optical signal detection system in another aspect, includes a photosensitive detection circuit and an optical signal detection device.
- the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit, the photosensitive sub-circuit is coupled to the reference voltage signal terminal, the output sub-circuit is coupled to the scanning voltage signal terminal, the photosensitive sub-circuit and the output signal terminal catch.
- the optical signal detection device is coupled to the scanning voltage signal terminal, and the optical signal detection device is configured to execute multiple detection periods in one detection, and control the scanning voltage in the exposure sub-period of each detection period
- the level of the scanning voltage signal transmitted by the signal terminal is the non-operating level, and in the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level.
- the photosensitive detection circuit further includes a detection sub-circuit, and the detection sub-circuit, the photosensitive sub-circuit and the output sub-circuit are coupled to the detection node.
- the detection sub-circuit is also coupled to the first voltage signal terminal and the detection signal terminal, and the detection sub-circuit is configured to transmit the detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
- the optical signal detection device is also coupled to the detection signal terminal. The optical signal detection device is also configured to determine whether the voltage of the detection node reaches the preset voltage according to the detection signal; if it is, the level of the control scanning voltage signal is changed from the non-operating voltage Switch to working level.
- the preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship.
- the minimum value of the voltage of the detection node is obtained through a calibration test.
- the number of detection periods included in the one detection is 2-20.
- a display device in another aspect, includes a display panel and the optical signal detection device according to any one of the above embodiments.
- the display panel includes a base substrate and a photosensitive detection circuit arranged on the base substrate.
- the optical signal detection device is coupled to the photosensitive detection circuit.
- the photosensitive detection circuit is the photosensitive detection circuit described in any of the above embodiments.
- the number of photosensitive detection circuits is multiple, and the multiple photosensitive detection circuits are arranged into multiple rows of photosensitive detection circuits.
- the display panel further includes a plurality of detection signal lines arranged on the base substrate, and at least one detection sub-circuit of at least one line of the photosensitive detection circuit in the plurality of rows of photosensitive detection circuits communicates with one of the plurality of detection signal lines through the detection signal terminal. ⁇ Line coupling.
- Figure 1 is a structural diagram of a detection circuit according to the related art
- FIG. 2 is a timing diagram of a driving method of a detection circuit according to the related art
- Fig. 3 is a structural diagram of a photosensitive detection circuit according to some embodiments of the present disclosure.
- Figure 4 is another structural diagram of a photosensitive detection circuit according to some embodiments of the present disclosure.
- FIG. 5 is a timing diagram of a driving method of a photosensitive detection circuit according to some embodiments of the present disclosure
- Fig. 6 is a flowchart of an optical signal detection method according to some embodiments of the present disclosure.
- Figure 7 is a block diagram of an optical signal detection device according to some embodiments of the present disclosure.
- Figure 8 is a structural diagram of a photosensitive detection system according to some embodiments of the present disclosure.
- FIG. 9 is a structural diagram of a display device according to some embodiments of the present disclosure.
- FIG. 10 is a timing diagram of a driving method of a display device according to some embodiments of the present disclosure.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, “plurality” means two or more.
- the expressions “coupled” and “connected” and their extensions may be used.
- the term “connected” may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other.
- the term “coupled” may be used when describing some embodiments to indicate that two or more components have direct physical or electrical contact.
- the term “coupled” or “communicatively coupled” may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other.
- the embodiments disclosed herein are not necessarily limited to the content of this document.
- display 00 comprises a plurality of signal lines GL driving means (driving signal lines GL 1 and the drive signal line GL 2), a plurality of read signal line RL (such as a read signal line RL 1 And the read signal line RL 2 ), and a plurality of detection circuits 01 arranged in an array.
- Each detection circuit 01 is composed of a photosensitive element PIN 0 and a thin film transistor T 0 .
- the first pole of the photosensitive element PIN 0 is coupled to the reference voltage signal terminal Vbias
- the second pole of the photosensitive element PIN 0 is coupled to the first pole of the thin film transistor T 0.
- each thin film transistor T 0 in each row detection circuit 01 is coupled to a driving signal line GL
- the second electrode of each thin film transistor T 0 in each column detection circuit 01 is connected to a read signal line RL. Coupling.
- one detection includes an exposure stage S 1 and a reading stage S 2 .
- the photosensitive element PIN 0 can convert the light signal it receives into a corresponding electric signal, and transmit the electric signal to the photosensitive element PIN 0
- the thin film transistor T 0 is turned off under the control of the non-operating level of the scanning voltage signal transmitted by the driving signal line GL. Therefore, in the exposure stage S 1 , the second electrode of the photosensitive element PIN 0 and the thin film transistor T 0 Photoelectric charges can be continuously accumulated between the first poles.
- the thin film transistor T 0 is turned on under the control of the operating level of the scanning voltage signal transmitted by the driving signal line GL, so that the second electrode of the photosensitive element PIN 0 is different from the first electrode of the thin film transistor T 0
- the electrical signal (that is, the accumulated photocharge) is transmitted to the read signal line RL through the thin film transistor T 0 , and is output by the read signal line RL, that is, the read signal line RL outputs a photocurrent.
- the operating levels of the scanning voltage signals are sequentially transmitted through a plurality of driving signal lines GL (such as driving signal lines GL 1 and driving signal lines GL 2 ), so that the detection circuits 01 of each row are sequentially transmitted photocurrent output which accumulated exposure phase S 1, according to differences of the current detection circuit 01 outputs, to achieve detection of the valleys of the fingerprint pattern of ridges.
- driving signal lines GL such as driving signal lines GL 1 and driving signal lines GL 2
- the intensity of the external ambient light is likely to change, so that the amount of light received by the photosensitive element PIN 0 in each detection circuit 01 within a unit time is also likely to change.
- the photosensitive detection circuit 10 includes a photosensitive sub-circuit 101, a detection node P, an output sub-circuit 102 and a detection sub-circuit 103.
- the detection node P does not represent a certain actual component, but can represent the junction of related circuit connections in the circuit diagram, that is, the detection node P is a junction of related electrical connections in the circuit diagram, etc. Effective node.
- the photosensitive sub-circuit 101 is coupled to the reference voltage signal terminal Vbias and the detection node P.
- the photosensitive sub-circuit 101 is configured to sense the intensity of light, generate an electrical signal, and transmit the electrical signal to the detection node P. For example, during the period when the reference voltage signal terminal Vbias transmits a voltage signal to the photosensitive sub-circuit 101, the stronger the received light intensity of the photosensitive sub-circuit 101, the more photocharges transmitted from the photosensitive sub-circuit 101 to the detection node P, and the greater the potential of the detection node P The lower.
- the output sub-circuit 102 is coupled to the scanning voltage signal terminal Gate, the detection node P, and the output signal terminal Output.
- the output sub-circuit 102 is configured to be turned off under the control of the non-operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate to expose the photosensitive sub-circuit 101. At this time, because the output sub-circuit 102 is turned off, the detection node P can continuously accumulate photocharges, and the more the photocharges at the detection node P accumulate, the lower the potential of the detection node P will be.
- the output sub-circuit 102 is also configured to be turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate to detect the electrical signal at the node P (that is, during the process of exposing the photosensitive sub-circuit 101) , The photocharge accumulated at the detection node P) is transmitted to the output signal terminal Output, and at the same time, the photosensitive sub-circuit 101 is reset. It should be noted that after multiple photosensitive detection circuits are applied to the display device, the electrical signal is output through the output signal terminal Output of each photosensitive detection circuit, and the display device can realize a specific function according to the difference between the electrical signals (such as fingerprint recognition, touch detection, etc.).
- the detection sub-circuit 103 is coupled to the detection node P, the first voltage signal terminal Vdd, and the detection signal terminal Test, and is configured to transmit a detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P. For example, during the transmission of the voltage signal at the first voltage signal terminal Vdd, if the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so that the voltage at point P can be determined based on the detection signal. It should be noted here that there is a relative relationship between the voltage at point P and the received light intensity of the photosensitive sub-circuit, and this relative relationship can be obtained through a calibration test in advance.
- the voltage at point P and the received light intensity of the photosensitive sub-circuit have a linear function relationship. According to the linear function relationship, a minimum value of point P can be obtained. When the voltage at point P reaches this minimum value, it can be considered that the photosensitive sub-circuit 101 has just reached the saturation state at this time.
- the detection sub-circuit 103 is coupled to the detection node P, the first voltage signal terminal Vdd, and the detection signal terminal Test, so that The detection sub-circuit 103 can transmit the detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P.
- the voltage at point P can be determined according to the detection signal transmitted by the detection sub-circuit 103 in real time, so as to determine whether the photosensitive sub-circuit 101 is In a saturated state.
- the output sub-circuit 102 can be opened in time when the photosensitive sub-circuit 101 is saturated or before saturation to reset the photosensitive sub-circuit 101, and the problem of the detection accuracy reduction caused by the over-exposure of the photosensitive sub-circuit 101 can be improved.
- the above-mentioned photosensitive detection circuit 10 can be used to implement various detection functions, such as touch detection and fingerprint detection.
- various detection functions such as touch detection and fingerprint detection.
- the electrical signal output by the output signal terminal Output of the photosensitive detection circuit usually needs to be converted from analog to digital converter (Analog to Digital Converter, ADC) to obtain the corresponding
- ADC Analog to Digital Converter
- the digital signal is transmitted to the image processor to realize the pattern detection, for example, the fingerprint image of the surface of the finger is obtained, and the fingerprint image can be used for fingerprint identification.
- the photosensitive detection circuit provided by the embodiment of the present disclosure can promptly turn on the output sub-circuit 102 to reset the photosensitive sub-circuit 101 when the photosensitive sub-circuit 101 is saturated or before it is saturated, so that the output generated by each exposure can be controlled.
- the amount of semaphore is helpful to set the dynamic range of the ADC to be smaller to further improve the detection accuracy.
- the photosensitive sub-circuit 101 includes a photodiode PIN.
- the first pole (such as the anode) of the photodiode PIN can be coupled to the aforementioned reference voltage signal terminal Vbias, and the second pole (such as the cathode) of the photodiode ) Can be coupled to the detection node P described above.
- the photodiode PIN can be in a reverse bias state.
- the photodiode PIN can convert the received light signal into a corresponding And transmit the electrical signal to the detection node P.
- photosensitive sub-circuit 101 may also include thin film transistors and other types of photosensitive elements, and the embodiment of the present disclosure does not limit the types of photosensitive elements.
- the output sub-circuit 102 includes a switching transistor T 1 , the control electrode of the switching transistor T 1 is coupled to the scanning voltage signal terminal Gate, and the first electrode of the switching transistor T 1 is coupled to the detection node P , a second electrode of the switching transistor T 1 and the signal output coupled to the output.
- the switching transistor T under control of the non-operating level of a scanning signal voltage of the scanning signal transmitted Gate terminal is closed to the photosensitive sub-circuit 101 is exposed. At this time, since the switching transistor T 1 off, so that the detection at the node P can continue to accumulate photocharge, P and photocharge accumulated at the sense node, the more the potential of the node P low detection.
- the switching transistor T 1 under the control of the working level of the scanning signal terminal voltage of the scanning signal transmitted Gate opened to detect the electrical signal at node P (i.e., in the process of exposing the photosensitive sub-circuit 101, the The photoelectric charge accumulated at the detection node P) is transmitted to the output signal terminal Output, and the photosensitive sub-circuit 101 is reset.
- the detection sub-circuit 103 includes a detection transistor T 2 , the control electrode of the detection transistor T 2 is coupled to the detection node P, and the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd Then, the second electrode of the detection transistor T 2 is coupled to the detection signal terminal Test.
- the control electrode of the transistor T 2 is detected (i.e.
- the current detecting transistor T between a first electrode and a second detection transistor T 2 electrode 2 will also ensue changes, e.g., when detecting transistor T 2 is a P-type transistor, the first transistor T is detected and the detection electrode of the transistor T 2 is greater the current between the second electrode 2, then the lower the voltage at point P; when detecting when the transistor T 2 is an N-type transistor, a current detecting transistor T between a first electrode and a second detection transistor T 2 is smaller electrode 2, the lower the voltage of the point P. Therefore, during the transmission of the voltage signal at the first voltage signal terminal Vdd, if the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so that the voltage at point P can be determined based on the detection signal.
- the transistors used in the embodiments of the present disclosure may be thin film transistors, field effect transistors, or other switching devices with the same characteristics.
- thin film transistors are used as examples for description.
- the source and drain of the thin film transistor used here can be symmetrical in structure, so the source and drain can be structurally indistinguishable.
- the gate of the thin film transistor is the control electrode, and in order to distinguish the two poles of the thin film transistor other than the gate, for example, one pole can be directly described as the first pole and the other pole is the second pole.
- the transistors are all described by taking the P-type transistor as an example. It should be noted that the embodiments of the present disclosure include but are not limited to this.
- one or more transistors in the circuit provided by the embodiments of the present disclosure can also be N-type transistors, and it is only necessary to connect the poles of the selected type of transistor with reference to the poles of the corresponding transistors in the embodiment of the present disclosure. , And make the corresponding voltage terminal provide the corresponding high voltage or low voltage.
- Some embodiments of the present disclosure also provide a light signal detection method, which is applied to the photosensitive detection circuit 10 in any of the above-mentioned embodiments. See FIG. 1, FIG. 3, and FIG. 4.
- the photosensitive detection circuit 10 includes at least a photosensitive sub-circuit. 101 and output sub-circuit 102.
- one detection L includes a plurality of detection periods, and each of the plurality of detection periods includes an exposure sub-period L 1 and a reset sub-period L 2 .
- the exposure sub-period L 1 includes:
- the reset sub-period L 2 includes:
- S22 Control the level of the scanning voltage signal to switch to the working level, so that the output sub-circuit 102 is turned on, the electrical signal is transmitted to the output signal terminal, and the photosensitive sub-circuit is reset.
- one of the working level and the non-working level of the scanning voltage signal is a high level, and the other is a low level.
- the output sub-circuit 102 includes a switching transistor T 1 and the switching transistor T 1 is a P-type transistor, the operating level of the scanning voltage signal is low, and the scanning voltage signal is inactive.
- the level is high; for another example, in the case where the output sub-circuit 102 includes an N-type transistor (not shown), the working level of the scanning voltage signal is high, and the non-working level of the scanning voltage signal is low Level.
- the sum of the exposure sub-periods of the multiple detection periods is the total exposure time required for one detection. Therefore, the signal value obtained by superimposing the signal amount generated in each exposure sub-period is the signal value corresponding to one detection.
- the total exposure time required for one detection is usually determined according to the specific detection function. For example, when the fingerprint detection function is implemented, the total exposure time required for one detection is usually about 100 milliseconds, that is, The amount of signal generated by the exposure time of about 100 milliseconds can be used to realize fingerprint recognition.
- the optical signal detection method provided by the embodiment of the present disclosure divides one detection into multiple detection periods, and each detection period includes the above-mentioned exposure sub-period L 1 and reset sub-period L 2 , so that each exposure sub-period L 1 Only a small amount of time is exposed, and the photosensitive sub-circuit 101 is reset through the reset sub-period L 2 after each exposure, so the resolution of the ADC can be set to be smaller, and it is only necessary to make each exposure sub-period L 1
- the amount of signal generated does not exceed the dynamic range of the ADC to meet the detection requirements. For example, assuming that an ADC with 16-bit resolution is required for one detection before, the optical signal detection method according to the embodiment of the present disclosure divides one detection into two.
- the detection time period is divided into a plurality of detection, while each of the detection period comprises a reset period of the sub, so that the photosensitive sub-circuit 101 in the sub-exposure period L 1 is not easily saturated, and further improved by the photosensitive The detection accuracy of the sub-circuit 101 is reduced due to overexposure.
- the photosensitive sub-circuit 101 may include a photodiode PIN, a first pole (such as an anode) of the photodiode PIN may be coupled to the reference voltage signal terminal Vbias, and a second pole of the photodiode ( For example, the cathode) can be coupled to the detection node P.
- Said output sub-circuit 102 may include a switch transistor T 1, the switching transistor T 1 to the control electrode voltage of the scanning signal Gate terminal coupled to a first electrode of the switching transistor T 1 and the sense node is coupled to P, a second switching transistor T 1 The pole is coupled to the output signal terminal Output.
- the bias voltage signal is transmitted to the first pole of the photodiode PIN through the above-mentioned reference voltage signal terminal Vbias, so that the photodiode PIN is in a reverse bias state.
- the photodiode PIN can receive The optical signal is converted into a corresponding electrical signal, and the electrical signal is transmitted to the detection node P.
- the switching transistor T 1 under the control of the non-operating level of the scanning voltage signal a scan signal transmitted Gate closed end, for exposure of the PIN photodiode, this time, since the switching transistor T 1 off, so that at the sense node P The photocharges can be accumulated continuously, and the more photocharges at the detection node P are accumulated, the lower the potential of the detection node P will be.
- the switching transistor T 1 is turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate, so as to detect the electrical signal at the node P (that is, when the photosensitive sub-circuit 101 During the exposure process, the photoelectric charge accumulated at the detection node P) is transferred to the output signal terminal Output, and the photodiode PIN is reset.
- the electrical signals transmitted to the output signal terminal Output in each reset sub-period are superimposed to obtain a detection signal corresponding to the above-mentioned one detection.
- the inventors of the present disclosure have discovered through research that the more the number of detection periods is set, the more beneficial it is to avoid overexposure of the photosensitive sub-circuit, and the more beneficial it is to set the dynamic range of the ADC to be smaller to improve the output accuracy.
- the number of detection periods included in the above-mentioned one detection is set to 2-20.
- the number of detection periods included in the above-mentioned one detection can be 2, 5, 6, 12, 16, 18, or 20, which is beneficial to avoid overexposure of the photosensitive sub-circuit, and the ADC
- the dynamic range is set to be smaller, while also avoiding excessive noise. It should be noted that with the increase of external ambient light, the number of detection periods included in the above-mentioned one detection can also be further increased, which is not limited in the present disclosure.
- the photosensitive detection circuit further includes a detection node P and a detection sub-circuit 103
- the optical signal detection method further includes:
- the detection signal determine whether the voltage of the detection node P reaches the preset voltage; if so, control the scanning voltage signal to switch from a non-operating level to a working level.
- the detection sub-circuit 103 can transmit the detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P, by receiving the detection signal transmitted by the detection sub-circuit 103 in real time from the detection signal terminal Test, and according to the The detection signal determines the voltage of point P.
- the scanning voltage signal is controlled to switch from the non-operating level to the operating level, which can be realized when the photosensitive sub-circuit 101 is just saturated
- the output sub-circuit 102 is turned on in time to reset the photosensitive sub-circuit 101, thereby improving the problem of the detection accuracy reduction caused by the over-exposure of the photosensitive sub-circuit 101.
- the detection sub-circuit 103 may include a detection transistor, the control electrode of the detection transistor T 2 is coupled to the detection node P, the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd, and the detection transistor T 2 The second pole of is coupled to the detection signal terminal Test.
- the first voltage signal terminal Vdd transmits a voltage signal to the second electrode of the detection transistor.
- the scanning voltage signal is controlled to switch from a non-operating level to a working level to turn on the output sub-circuit and transmit the electrical signal at the detection node P to the output signal terminal Output, That is to realize the reset of the photosensitive sub-circuit.
- the above-mentioned preset voltage is the minimum value of the voltage of the detection node P when the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship.
- the minimum value of the voltage of the detection node P is obtained through the calibration test.
- the calibration test refers to measuring the corresponding relationship between the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit with a standard measuring instrument in advance, so that the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship At this time, the minimum value of the voltage of the node P is detected, and the minimum value of the voltage of the detection node P is recorded.
- the light signal detection device 20 includes a processor 202 and a memory 201.
- the memory 201 stores computer program instructions. When the computer program instructions are executed by the processor 202, one or more steps in the optical signal detection method as in any of the foregoing embodiments are implemented.
- the optical signal detection system 30 includes a photosensitive detection circuit 10 and an optical signal detection device 20.
- the photosensitive detection circuit 10 includes a photosensitive sub-circuit 101 and an output sub-circuit 102.
- the photosensitive sub-circuit 101 is coupled to the reference voltage signal terminal Vbias, and the output sub-circuit 102 is connected to the scanning voltage signal terminal Gate, the photosensitive sub-circuit 101 and the output signal terminal Output Coupling.
- the optical signal detection device is at least coupled to the scanning voltage signal terminal Gate, and the optical signal detection device 20 is configured to perform multiple detection periods in one detection, and control the scanning voltage signal terminal Gate to transmit during the exposure sub-period of each detection period.
- the level of the scanning voltage signal is a non-operating level, and in the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to be the operating level.
- the optical signal detection system can use the optical signal detection device 20 to perform multiple detection periods in one detection. Because of the exposure sub-period of each detection period, the scanning voltage signal terminal Gate transmits the scanning The level of the voltage signal is a non-operating level. In the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level, so that each exposure sub-period is only exposed for a small amount of time, and after each exposure The photosensitive sub-circuit 101 is reset through the reset sub-period, so the resolution of the ADC can be set smaller.
- the optical signal detection method of the embodiment of the present disclosure is used to divide one detection into two detection periods, only an 8-bit resolution is required.
- the ADC can meet the detection requirements.
- the 8-bit resolution ADC has a smaller dynamic range, it also helps to improve the output accuracy of the signal.
- the optical signal detection device 20 is used to divide one detection into multiple detection periods, and each detection period includes a reset sub-period, the photosensitive sub-circuit 101 is not easily saturated in each exposure sub-period. Furthermore, the problem of reduced detection accuracy caused by overexposure of the photosensitive sub-circuit 101 is also improved.
- the photosensitive detection circuit further includes a detection sub-circuit 103 and a detection node P.
- the detection sub-circuit 103, the photosensitive sub-circuit 101 and the output sub-circuit 102 are coupled to the detection node P, and the detection sub-circuit 103 is also coupled to the first voltage signal terminal Vdd and the detection signal terminal Test.
- the detection sub-circuit 103 is configured to transmit a detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P.
- the optical signal detection device 20 is also coupled to the detection signal terminal Test.
- the optical signal detection device 20 is also configured to determine whether the voltage of the detection node reaches the preset voltage according to the detection signal; if so, control the level of the scanning voltage signal to switch from a non-operating level to a working level.
- the photosensitive sub-circuit 101 may include a photodiode PIN, a first pole (such as an anode) of the photodiode PIN may be coupled to the reference voltage signal terminal Vbias, and a second pole of the photodiode ( For example, the cathode) can be coupled to the detection node P.
- Said output sub-circuit 102 may include a switch transistor T 1, the switching transistor T 1 to the control electrode voltage of the scanning signal Gate terminal coupled to a first electrode of the switching transistor T 1 and the sense node is coupled to P, a second switching transistor T 1 The pole is coupled to the output signal terminal Output.
- the detection sub-circuit 103 may include a detection transistor, the control electrode of the detection transistor T 2 is coupled to the detection node P, the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd, and the second electrode of the detection transistor T 2 Coupled with the test signal terminal Test.
- the optical signal detection device 20 is also coupled to the reference voltage signal terminal Vbias, the first voltage signal terminal Vdd, and the output signal terminal Output.
- the optical signal detection device 20 is also configured to transmit a bias voltage signal to the first pole of the photodiode PIN through the reference voltage signal terminal Vbias during the exposure sub-period, so that the photodiode PIN is in a reverse bias state. At this time, The photodiode PIN can convert the received optical signal into a corresponding electrical signal, and transmit the electrical signal to the detection node P.
- a voltage signal is transmitted to the second electrode of the detection transistor through the first voltage signal terminal Vdd.
- the detection signal transmitted in real time will also change accordingly.
- the detection signal determines the voltage at point P.
- the scanning voltage signal is controlled to switch from a non-operating level to a working level to turn on the output sub-circuit and transmit the electrical signal at the detection node P to the output signal terminal Output, That is to realize the reset of the photosensitive sub-circuit.
- the control switch transistor T 1 is turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate, so as to detect the electrical signal at the node P (that is, in the sensing sub-circuit During the exposure process of 101, the photocharge accumulated at the detection node P) is transferred to the output signal terminal Output, so as to reset the photodiode PIN.
- the electrical signals transmitted to the output signal terminal Output in each reset sub-period are superimposed to obtain a detection signal corresponding to the above-mentioned one detection.
- the display device 40 includes a display panel 41 and an optical signal detection device 20 as in any of the above-mentioned embodiments.
- the display panel 41 includes a base substrate 411 and a photosensitive detection circuit 10 disposed on the base substrate 411.
- the optical signal detection device 20 is coupled to the photosensitive detection circuit 10.
- the display device 40 provided in this embodiment can perform multiple detection periods in one detection through the photosensitive detection circuit 10 and the optical signal detection device 20. Since the exposure sub-period of each detection period, the scanning voltage signal terminal Gate transmits The level of the scanning voltage signal is a non-operating level. In the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level, so that each exposure sub-period is only exposed for a small amount of time, and each exposure After that, the photosensitive sub-circuit 101 is reset through the reset sub-period, so the resolution of the ADC can be set smaller. It is only necessary to make the signal generated by each exposure sub-period not exceed the dynamic range of the ADC to meet the detection requirements.
- the photosensitive detection circuit in the display device 40 is the photosensitive detection circuit 10 in any of the embodiments described above.
- the number of photosensitive detection circuits 10 is multiple, and the plurality of photosensitive detection circuits 10 are arranged into multiple rows of photosensitive detection circuits 10. It should be noted that only part of the photosensitive detection circuit 10 is shown in FIG. 9. In practical applications, the number of photosensitive detection circuits 10 can be reasonably set according to the size of the display device 40 and usage requirements.
- the display panel 41 further includes a plurality of detection signal lines TL (such as the detection signal line TL 1 and the detection signal line TL 2 ) arranged on the base substrate 411.
- a detection sub-circuit is coupled to one of the detection signal lines through the detection signal terminal Test.
- each detection signal line can output the voltage of the detection node P of at least one photosensitive detection circuit in a row of photosensitive detection circuits.
- the display panel 41 also includes a plurality of driving signal lines GL (such as a driving signal line GL 1 and a driving signal line GL 2 ) and a plurality of reading signal lines RL (such as a reading signal line RL 1 and a reading signal line RL 2 ) .
- the control electrode of each thin film transistor T 0 in each row detection circuit 01 is coupled to a driving signal line GL
- the second electrode of each thin film transistor T 0 in each column detection circuit 01 is coupled to a read signal line RL .
- the optical signal detection device 20 is configured such that, for each row of photosensitive detection circuits 10, one detection includes multiple detection periods, and each detection period includes exposure sub-periods. Period L 1 and reset sub-period L 2 .
- each line of the photodetector circuit 10 sequentially outputs an exposure time sub-intervals of each detection period L 1 of generated
- the electrical signal wherein the electrical signal output by each photosensitive detection circuit 10 in each row of photosensitive detection circuits 10 can be transmitted to the optical signal detection device 20 by the read signal line RL to which it is coupled.
- the optical signal detecting means 20 may be a plurality of exposure of the sub-period L of the electrical signal generated comprises a detection superimposed to obtain the total electric signal according to each of the photosensitive further The difference between the total electrical signals output by the detection circuit 10 realizes the pattern detection of the fingerprint valley ridges.
- the photosensitive detection circuit and the optical signal detection device in the display device are not limited to being used to realize fingerprint detection, and can also be used to realize other photoelectric (signal) detection functions, such as touch detection, X-ray detection, etc.
- the embodiment of the present disclosure does not limit this.
- the display device provided by the embodiment of the present disclosure can be any product with display function such as liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, TV, monitor, notebook computer, digital photo frame, navigator, etc. Or components, the present disclosure does not limit this.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Human Computer Interaction (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
Claims (15)
- 一种光敏检测电路,包括感光子电路、输出子电路和检测子电路;其中,A photosensitive detection circuit includes a photosensitive sub-circuit, an output sub-circuit and a detection sub-circuit; wherein,所述感光子电路与参考电压信号端及检测节点耦接,被配置为感应光线强度,产生电信号,并将所述电信号传输至所述检测节点;The photosensitive sub-circuit is coupled to a reference voltage signal terminal and a detection node, and is configured to sense light intensity, generate an electrical signal, and transmit the electrical signal to the detection node;所述输出子电路与扫描电压信号端、所述检测节点及输出信号端耦接;所述输出子电路被配置为,在所述扫描信号端所传输的扫描电压信号的非工作电平的控制下关闭,以对所述感光子电路进行曝光;及,在所述扫描电压信号的工作电平的控制下打开,以将所述电信号传输至所述输出信号端;The output sub-circuit is coupled to the scanning voltage signal terminal, the detection node and the output signal terminal; the output sub-circuit is configured to control the non-operating level of the scanning voltage signal transmitted at the scanning signal terminal Turn off to expose the photosensitive sub-circuit; and turn on under the control of the operating level of the scanning voltage signal to transmit the electrical signal to the output signal terminal;所述检测子电路与所述检测节点、第一电压信号端及检测信号端耦接,被配置为响应于所述检测节点的电压,向所述检测信号端实时传输检测信号。The detection sub-circuit is coupled to the detection node, the first voltage signal terminal, and the detection signal terminal, and is configured to transmit a detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
- 根据权利要求1所述的光敏检测电路,其中,所述感光子电路包括:The photosensitive detection circuit according to claim 1, wherein the photosensitive sub-circuit comprises:光敏二极管,所述光敏二极管的第一极与所述参考电压信号端耦接,所述光敏二极管的第二极与所述检测节点耦接。A photodiode, the first pole of the photodiode is coupled to the reference voltage signal terminal, and the second pole of the photodiode is coupled to the detection node.
- 根据权利要求1或2所述的光敏检测电路,其中,所述输出子电路包括:The photosensitive detection circuit according to claim 1 or 2, wherein the output sub-circuit comprises:开关晶体管,所述开关晶体管的控制极与所述扫描电压信号端耦接,所述开关晶体管的第一极与所述检测节点耦接,所述开关晶体管的第二极与所述输出信号端耦接。A switching transistor, the control electrode of the switching transistor is coupled to the scanning voltage signal terminal, the first electrode of the switching transistor is coupled to the detection node, and the second electrode of the switching transistor is connected to the output signal terminal Coupling.
- 根据权利要求1~3中任一项所述的光敏检测电路,其中,所述检测子电路包括:The photosensitive detection circuit according to any one of claims 1 to 3, wherein the detection sub-circuit comprises:检测晶体管,所述检测晶体管的控制极与所述检测节点耦接,所述检测晶体管的第一极与所述第一电压信号端耦接,所述检测晶体管的第二极与所述检测信号端耦接。A detection transistor, a control electrode of the detection transistor is coupled to the detection node, a first electrode of the detection transistor is coupled to the first voltage signal terminal, and a second electrode of the detection transistor is connected to the detection signal端 Coupled.
- 一种光信号检测方法,应用于光敏检测电路,所述光敏检测电路包括感光子电路和输出子电路;A light signal detection method, applied to a photosensitive detection circuit, the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit;一次检测包括多个检测时段,所述多个检测时段中的每个所述检测时段包括:One detection includes multiple detection periods, and each of the multiple detection periods includes:曝光子时段,控制扫描电压信号的电平为非工作电平,使所述输出子电路关闭,所述感光子电路感应光线强度,产生电信号;During the exposure sub-period, controlling the level of the scanning voltage signal to a non-operating level, so that the output sub-circuit is turned off, and the photosensitive sub-circuit senses the intensity of light to generate an electrical signal;重置子时段,控制所述扫描电压信号的电平切换为工作电平,使所述输出子电路打开,所述电信号传输至输出信号端,并对所述感光子电路重置;A reset sub-period, controlling the level of the scanning voltage signal to switch to a working level, turning on the output sub-circuit, transmitting the electrical signal to the output signal terminal, and resetting the photosensitive sub-circuit;所述多个检测时段的曝光子时段之和为进行一次检测所需要的总曝光时长。The sum of the exposure sub-periods of the multiple detection periods is the total exposure time required for one detection.
- 根据权利要求5所述的光信号检测方法,其中,所述光敏检测电路还包括检测子电路;The optical signal detection method according to claim 5, wherein the photosensitive detection circuit further comprises a detection sub-circuit;所述光信号检测方法还包括:The optical signal detection method further includes:从检测信号端处接收检测信号,所述检测信号为所述检测子电路响应于检测节点的电压向所述检测信号端实时传输的信号;Receiving a detection signal from the detection signal terminal, where the detection signal is a signal that the detection sub-circuit transmits to the detection signal terminal in real time in response to the voltage of the detection node;根据所述检测信号,判断所述检测节点的电压是否达到预设电压;若是,则控制所述扫描电压信号由非工作电平切换为工作电平。According to the detection signal, it is determined whether the voltage of the detection node reaches a preset voltage; if so, the scanning voltage signal is controlled to switch from a non-operating level to an operating level.
- 根据权利要求6所述的光信号检测方法,其中,The optical signal detection method according to claim 6, wherein:所述预设电压为,所述检测节点的电压与所述感光子电路的受光强度满足一次函数关系时,所述检测节点的电压的最小值;The preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship;所述检测节点的电压的最小值通过标定测试得到。The minimum value of the voltage of the detection node is obtained through a calibration test.
- 根据权利要求5~7中任一项所述的光信号检测方法,其中,所述一次检测所包括的所述检测时段的个数为2个~20个。The optical signal detection method according to any one of claims 5 to 7, wherein the number of the detection periods included in the one detection is 2-20.
- 一种光信号检测装置,包括处理器和存储器,所述存储器上存储有计算机程序指令,当所述存储器存储的计算机程序指令被所述处理器执行时,实现如权利要求5~8中任一项所述的光信号检测方法中的一个或多个步骤。An optical signal detection device, comprising a processor and a memory, and computer program instructions are stored on the memory. When the computer program instructions stored in the memory are executed by the processor, the implementation is as follows: One or more steps in the optical signal detection method described in the item.
- 一种光信号检测***,包括:An optical signal detection system, including:光敏检测电路,所述光敏检测电路包括感光子电路和输出子电路,所述感光子电路与参考电压信号端耦接;所述输出子电路与扫描电压信号端、所述感光子电路及输出信号端耦接;和,A photosensitive detection circuit, the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit, the photosensitive sub-circuit is coupled to a reference voltage signal terminal; the output sub-circuit and the scanning voltage signal terminal, the photosensitive sub-circuit and the output signal End coupling; and,光信号检测装置,所述光信号检测装置与所述扫描电压信号端耦接;所述光信号检测装置被配置为,在一次检测中执行多个检测时段,在每个检测时段的曝光子时段,控制所述扫描电压信号端传输的扫描电压信号的电平为非工作电平,在每个检测时段的重置子时段,控制所述扫描电压信号的电平为工作电平。The optical signal detection device is coupled to the scanning voltage signal terminal; the optical signal detection device is configured to perform multiple detection periods in one detection, and the exposure sub-period of each detection period , Controlling the level of the scanning voltage signal transmitted by the scanning voltage signal terminal to the non-operating level, and controlling the level of the scanning voltage signal to the operating level during the reset sub-period of each detection period.
- 根据权利要求10所述的光信号检测***,其中,所述光敏检测电路还包括检测子电路,所述检测子电路、所述感光子电路和所述输出子电路与检测节点耦接,所述检测子电路还与第一电压信号端及检测信号端耦接;The optical signal detection system according to claim 10, wherein the photosensitive detection circuit further comprises a detection sub-circuit, the detection sub-circuit, the photosensitive sub-circuit, and the output sub-circuit are coupled to a detection node, the The detection sub-circuit is also coupled to the first voltage signal terminal and the detection signal terminal;所述检测子电路被配置为响应于所述检测节点的电压,向所述检测信号端实时传输检测信号;The detection sub-circuit is configured to transmit a detection signal to the detection signal terminal in real time in response to the voltage of the detection node;所述光信号检测装置还与所述检测信号端耦接;所述光信号检测装置还被配置为,根据所述检测信号,判断所述检测节点的电压是否达到预设电压;若是,则控制所述扫描电压信号的电平由非工作电平切换为工作电平。The optical signal detection device is also coupled to the detection signal terminal; the optical signal detection device is further configured to determine whether the voltage of the detection node reaches a preset voltage according to the detection signal; if so, control The level of the scanning voltage signal is switched from a non-operating level to a working level.
- 根据权利要求11所述的光信号检测***,其中,The optical signal detection system according to claim 11, wherein:所述预设电压为,所述检测节点的电压与所述感光子电路的受光强度满足一次函数关系时,所述检测节点的电压的最小值;The preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship;所述检测节点的电压的最小值通过标定测试得到。The minimum value of the voltage of the detection node is obtained through a calibration test.
- 根据权利要求10~12中任一项所述的光信号检测***,其中,所述一次检测所包括的所述检测时段的个数为2个~20个。The optical signal detection system according to any one of claims 10 to 12, wherein the number of the detection periods included in the one detection is 2 to 20.
- 一种显示装置,包括:A display device includes:显示面板,所述显示面板包括衬底基板,及设置于所述衬底基板上的光敏检测电路;A display panel, the display panel including a base substrate, and a photosensitive detection circuit arranged on the base substrate;如权利要求9所述的光信号检测装置,所述光信号检测装置与所述光敏检测电路耦接。9. The optical signal detection device according to claim 9, wherein the optical signal detection device is coupled to the photosensitive detection circuit.
- 根据权利要求14所述的显示装置,其中,所述光敏检测电路为如权利要求1~4中任一项所述的光敏检测电路;所述光敏检测电路的数量为多个,多个所述光敏检测电路排列成多行光敏检测电路;The display device according to claim 14, wherein the photosensitive detection circuit is the photosensitive detection circuit according to any one of claims 1 to 4; The photosensitive detection circuits are arranged into multiple rows of photosensitive detection circuits;所述显示面板还包括设置于所述衬底基板上的多条检测信号线,所述多行光敏检测电路中的至少一行光敏检测电路的至少一个检测子电路通过检测信号端与所述多条检测信号线中的一条检测信号线耦接。The display panel further includes a plurality of detection signal lines arranged on the base substrate, and at least one detection sub-circuit of at least one row of the photosensitive detection circuit in the plurality of rows of photosensitive detection circuits communicates with the plurality of detection signal terminals through the detection signal terminal. One of the detection signal lines is coupled.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/075821 WO2021163914A1 (en) | 2020-02-19 | 2020-02-19 | Photosensitive detection circuit, optical signal detection method, device and system, and display device |
CN202080000143.6A CN113544695B (en) | 2020-02-19 | 2020-02-19 | Photosensitive detection circuit, optical signal detection method, device and system and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/075821 WO2021163914A1 (en) | 2020-02-19 | 2020-02-19 | Photosensitive detection circuit, optical signal detection method, device and system, and display device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021163914A1 true WO2021163914A1 (en) | 2021-08-26 |
Family
ID=77390363
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2020/075821 WO2021163914A1 (en) | 2020-02-19 | 2020-02-19 | Photosensitive detection circuit, optical signal detection method, device and system, and display device |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN113544695B (en) |
WO (1) | WO2021163914A1 (en) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110057866A1 (en) * | 2006-05-01 | 2011-03-10 | Konicek Jeffrey C | Active Matrix Emissive Display and Optical Scanner System |
CN108052898A (en) * | 2017-12-12 | 2018-05-18 | 京东方科技集团股份有限公司 | Fingerprint Identification sensor, display device and fingerprint identification method |
CN108615032A (en) * | 2018-06-25 | 2018-10-02 | Oppo广东移动通信有限公司 | A kind of module, terminal device and fingerprint identification method for supporting full frame fingerprint recognition |
CN108922940A (en) * | 2018-07-17 | 2018-11-30 | 京东方科技集团股份有限公司 | Optical detection pixel unit, circuit, optical detecting method and display device |
CN110008840A (en) * | 2019-03-08 | 2019-07-12 | 昆山丘钛微电子科技有限公司 | Optical finger print mould group and fingerprint recognition display device |
CN110059664A (en) * | 2019-04-28 | 2019-07-26 | 信利(惠州)智能显示有限公司 | Fingerprint recognition circuit and fingerprint identification method |
US20190303640A1 (en) * | 2016-04-19 | 2019-10-03 | Samsung Electronics Co., Ltd. | Electronic device supporting fingerprint verification and method for operating the same |
CN110763336A (en) * | 2018-07-26 | 2020-02-07 | 京东方科技集团股份有限公司 | Photodetection circuit, electronic device, and driving method |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106782312B (en) * | 2017-03-08 | 2019-01-29 | 合肥鑫晟光电科技有限公司 | A kind of pixel circuit and its driving method, display device |
CN108874195A (en) * | 2017-05-12 | 2018-11-23 | 京东方科技集团股份有限公司 | Touch pixel-driving circuit and driving method, touch control display apparatus |
CN107204172B (en) * | 2017-06-02 | 2019-05-21 | 京东方科技集团股份有限公司 | Pixel circuit and its driving method, display panel |
CN107480650B (en) * | 2017-08-24 | 2020-03-27 | 京东方科技集团股份有限公司 | Fingerprint detection unit, fingerprint detection circuit, driving method of fingerprint detection circuit and display device |
CN209044568U (en) * | 2017-12-30 | 2019-06-28 | 深圳信炜科技有限公司 | Photosensitive driving circuit, photosensitive device and electronic equipment |
CN108229395B (en) * | 2018-01-03 | 2021-08-06 | 京东方科技集团股份有限公司 | Fingerprint identification detection circuit and touch panel |
CN108280432B (en) * | 2018-01-25 | 2021-01-26 | 京东方科技集团股份有限公司 | Fingerprint identification detection circuit, driving method thereof and display device |
-
2020
- 2020-02-19 WO PCT/CN2020/075821 patent/WO2021163914A1/en active Application Filing
- 2020-02-19 CN CN202080000143.6A patent/CN113544695B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110057866A1 (en) * | 2006-05-01 | 2011-03-10 | Konicek Jeffrey C | Active Matrix Emissive Display and Optical Scanner System |
US20190303640A1 (en) * | 2016-04-19 | 2019-10-03 | Samsung Electronics Co., Ltd. | Electronic device supporting fingerprint verification and method for operating the same |
CN108052898A (en) * | 2017-12-12 | 2018-05-18 | 京东方科技集团股份有限公司 | Fingerprint Identification sensor, display device and fingerprint identification method |
CN108615032A (en) * | 2018-06-25 | 2018-10-02 | Oppo广东移动通信有限公司 | A kind of module, terminal device and fingerprint identification method for supporting full frame fingerprint recognition |
CN108922940A (en) * | 2018-07-17 | 2018-11-30 | 京东方科技集团股份有限公司 | Optical detection pixel unit, circuit, optical detecting method and display device |
CN110763336A (en) * | 2018-07-26 | 2020-02-07 | 京东方科技集团股份有限公司 | Photodetection circuit, electronic device, and driving method |
CN110008840A (en) * | 2019-03-08 | 2019-07-12 | 昆山丘钛微电子科技有限公司 | Optical finger print mould group and fingerprint recognition display device |
CN110059664A (en) * | 2019-04-28 | 2019-07-26 | 信利(惠州)智能显示有限公司 | Fingerprint recognition circuit and fingerprint identification method |
Also Published As
Publication number | Publication date |
---|---|
CN113544695A (en) | 2021-10-22 |
CN113544695B (en) | 2024-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11927475B2 (en) | Detecting high intensity light in photo sensor | |
US20190058058A1 (en) | Detection circuit for photo sensor with stacked substrates | |
JP2020532098A (en) | Stacked photosensor assembly with pixel-level interconnects | |
US10622493B2 (en) | Light detecting device, light detecting method and display device | |
CN107314813B (en) | Light-intensity test unit, light-intensity test method and display device | |
JP2010271194A (en) | Photodetector | |
TWI764161B (en) | light detection device | |
WO2019041814A1 (en) | Light detection module, light detection circuit, and electronic device | |
WO2021163914A1 (en) | Photosensitive detection circuit, optical signal detection method, device and system, and display device | |
CN109671384B (en) | Terminal and photosensitive detection method for terminal | |
TWI238526B (en) | Photoelectric transfer amount detection method and photoelectric transfer device, image input method and image input device, and two-dimensional image sensor and driving method of same | |
WO2022061761A1 (en) | Image sensor and control method therefor, and imaging device carrying image sensor | |
CN109979367B (en) | Photoelectric detection circuit, driving method thereof, photosensitive device and display device | |
CN211239962U (en) | Active pixel sensing circuit, image sensor and light detection display panel | |
CN210327778U (en) | Image sensor and related chip and handheld device | |
KR100977834B1 (en) | ???? Image Sensor with Wide Dynamic Range | |
CN112532899B (en) | Photoelectric conversion circuit, driving method, photoelectric detection substrate, and photoelectric detection device | |
US20240184405A1 (en) | Photoelectric detection circuit, method of controlling photoelectric detection circuit, and pixel unit | |
US20020097446A1 (en) | Apparatus and method for dark calibration of a linear CMOS sensor | |
TWI843655B (en) | Image sensor and image output method thereof, and opoelectronic device | |
US11314961B2 (en) | Texture image acquisition method, texture image acquisition circuit and display panel | |
WO2023044909A1 (en) | Photoelectric detection circuit and control method therefor, and pixel unit | |
WO2021223105A1 (en) | Pixel, image sensor, and electronic device | |
WO2021131431A1 (en) | Light-receiving device, method for controlling light-receiving device, and electronic apparatus | |
TW498683B (en) | Dark calibration apparatus and method for linear complementary metal oxide semiconductor sensor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20920488 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20920488 Country of ref document: EP Kind code of ref document: A1 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20920488 Country of ref document: EP Kind code of ref document: A1 |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 30.03.2023) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20920488 Country of ref document: EP Kind code of ref document: A1 |