WO2021163914A1 - Photosensitive detection circuit, optical signal detection method, device and system, and display device - Google Patents

Photosensitive detection circuit, optical signal detection method, device and system, and display device Download PDF

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Publication number
WO2021163914A1
WO2021163914A1 PCT/CN2020/075821 CN2020075821W WO2021163914A1 WO 2021163914 A1 WO2021163914 A1 WO 2021163914A1 CN 2020075821 W CN2020075821 W CN 2020075821W WO 2021163914 A1 WO2021163914 A1 WO 2021163914A1
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Prior art keywords
detection
circuit
sub
photosensitive
signal
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PCT/CN2020/075821
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French (fr)
Chinese (zh)
Inventor
丁小梁
王海生
刘英明
李昌峰
王雷
李亚鹏
王佳斌
曹学友
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2020/075821 priority Critical patent/WO2021163914A1/en
Priority to CN202080000143.6A priority patent/CN113544695B/en
Publication of WO2021163914A1 publication Critical patent/WO2021163914A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means

Definitions

  • the present disclosure relates to a photosensitive detection circuit, a light signal detection method, device and system, and a display device.
  • display devices can convert light of different intensities into photocurrents of different sizes, thereby achieving specific functions (such as fingerprint recognition, touch detection, etc.). For example, there is a difference between the fingerprint valleys, the light source irradiates the hand to produce different intensities of reflected light, and the display device receives different intensities of reflected light to generate different photocurrents, and then the fingerprint pattern can be determined.
  • a photosensitive detection circuit includes a photosensitive sub-circuit, an output sub-circuit and a detection sub-circuit.
  • the photosensitive sub-circuit is coupled to the reference voltage signal terminal and the detection node, and is configured to sense light intensity, generate an electrical signal, and transmit the electrical signal to the detection node.
  • the output sub-circuit is coupled with the scanning voltage signal terminal, the detection node and the output signal terminal.
  • the output sub-circuit is configured to be closed under the control of the non-operating level of the scanning voltage signal transmitted by the scanning signal terminal to expose the photosensitive sub-circuit; and open under the control of the operating level of the scanning voltage signal, To transmit the electrical signal to the output signal terminal.
  • the detection sub-circuit is coupled to the detection node, the first voltage signal terminal and the detection signal terminal, and is configured to transmit the detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
  • the photosensitive sub-circuit includes a photodiode, the first pole of the photodiode is coupled to the reference voltage signal terminal, and the second pole of the photodiode is coupled to the detection node.
  • the output sub-circuit includes a switching transistor, the control electrode of the switching transistor is coupled to the scanning voltage signal terminal, the first electrode of the switching transistor is coupled to the detection node, and the second electrode of the switching transistor is coupled to the output signal terminal.
  • the detection sub-circuit includes a detection transistor, the control electrode of the detection transistor is coupled to the detection node, the first electrode of the detection transistor is coupled to the first voltage signal terminal, and the second electrode of the detection transistor is coupled to the detection signal terminal. catch.
  • an optical signal detection method is provided.
  • the optical signal detection method is applied to a photosensitive detection circuit, which includes a photosensitive sub-circuit and an output sub-circuit.
  • One detection includes multiple detection periods, and each of the multiple detection periods includes an exposure sub-period and a reset sub-period.
  • the level of the scanning voltage signal is controlled to be at a non-operating level, so that the output sub-circuit is closed, and the photosensitive sub-circuit senses the light intensity to generate an electrical signal; in the reset sub-period, the level of the control scanning voltage signal is switched to The working level enables the output sub-circuit to open, the electrical signal is transmitted to the output signal terminal, and the photosensitive sub-circuit is reset.
  • the sum of the exposure sub-periods of multiple detection periods is the total exposure time required for one detection.
  • the photosensitive detection circuit further includes a detection sub-circuit.
  • the optical signal detection method also includes: receiving a detection signal from the detection signal terminal, the detection signal is a signal that the detection sub-circuit transmits to the detection signal terminal in real time in response to the voltage of the detection node; and judging whether the voltage of the detection node reaches a preset value according to the detection signal Voltage; if it is, control the scanning voltage signal to switch from a non-operating level to a working level.
  • the preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship.
  • the minimum value of the voltage of the detection node is obtained through a calibration test.
  • the number of detection periods included in the one detection is 2-20.
  • an optical signal detection device in another aspect, includes a processor and a memory, and computer program instructions are stored in the memory.
  • the computer program instructions stored in the memory are executed by the processor, the optical signal detection method according to any one of the above embodiments is implemented. One or more steps.
  • an optical signal detection system in another aspect, includes a photosensitive detection circuit and an optical signal detection device.
  • the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit, the photosensitive sub-circuit is coupled to the reference voltage signal terminal, the output sub-circuit is coupled to the scanning voltage signal terminal, the photosensitive sub-circuit and the output signal terminal catch.
  • the optical signal detection device is coupled to the scanning voltage signal terminal, and the optical signal detection device is configured to execute multiple detection periods in one detection, and control the scanning voltage in the exposure sub-period of each detection period
  • the level of the scanning voltage signal transmitted by the signal terminal is the non-operating level, and in the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level.
  • the photosensitive detection circuit further includes a detection sub-circuit, and the detection sub-circuit, the photosensitive sub-circuit and the output sub-circuit are coupled to the detection node.
  • the detection sub-circuit is also coupled to the first voltage signal terminal and the detection signal terminal, and the detection sub-circuit is configured to transmit the detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
  • the optical signal detection device is also coupled to the detection signal terminal. The optical signal detection device is also configured to determine whether the voltage of the detection node reaches the preset voltage according to the detection signal; if it is, the level of the control scanning voltage signal is changed from the non-operating voltage Switch to working level.
  • the preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship.
  • the minimum value of the voltage of the detection node is obtained through a calibration test.
  • the number of detection periods included in the one detection is 2-20.
  • a display device in another aspect, includes a display panel and the optical signal detection device according to any one of the above embodiments.
  • the display panel includes a base substrate and a photosensitive detection circuit arranged on the base substrate.
  • the optical signal detection device is coupled to the photosensitive detection circuit.
  • the photosensitive detection circuit is the photosensitive detection circuit described in any of the above embodiments.
  • the number of photosensitive detection circuits is multiple, and the multiple photosensitive detection circuits are arranged into multiple rows of photosensitive detection circuits.
  • the display panel further includes a plurality of detection signal lines arranged on the base substrate, and at least one detection sub-circuit of at least one line of the photosensitive detection circuit in the plurality of rows of photosensitive detection circuits communicates with one of the plurality of detection signal lines through the detection signal terminal. ⁇ Line coupling.
  • Figure 1 is a structural diagram of a detection circuit according to the related art
  • FIG. 2 is a timing diagram of a driving method of a detection circuit according to the related art
  • Fig. 3 is a structural diagram of a photosensitive detection circuit according to some embodiments of the present disclosure.
  • Figure 4 is another structural diagram of a photosensitive detection circuit according to some embodiments of the present disclosure.
  • FIG. 5 is a timing diagram of a driving method of a photosensitive detection circuit according to some embodiments of the present disclosure
  • Fig. 6 is a flowchart of an optical signal detection method according to some embodiments of the present disclosure.
  • Figure 7 is a block diagram of an optical signal detection device according to some embodiments of the present disclosure.
  • Figure 8 is a structural diagram of a photosensitive detection system according to some embodiments of the present disclosure.
  • FIG. 9 is a structural diagram of a display device according to some embodiments of the present disclosure.
  • FIG. 10 is a timing diagram of a driving method of a display device according to some embodiments of the present disclosure.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, “plurality” means two or more.
  • the expressions “coupled” and “connected” and their extensions may be used.
  • the term “connected” may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other.
  • the term “coupled” may be used when describing some embodiments to indicate that two or more components have direct physical or electrical contact.
  • the term “coupled” or “communicatively coupled” may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other.
  • the embodiments disclosed herein are not necessarily limited to the content of this document.
  • display 00 comprises a plurality of signal lines GL driving means (driving signal lines GL 1 and the drive signal line GL 2), a plurality of read signal line RL (such as a read signal line RL 1 And the read signal line RL 2 ), and a plurality of detection circuits 01 arranged in an array.
  • Each detection circuit 01 is composed of a photosensitive element PIN 0 and a thin film transistor T 0 .
  • the first pole of the photosensitive element PIN 0 is coupled to the reference voltage signal terminal Vbias
  • the second pole of the photosensitive element PIN 0 is coupled to the first pole of the thin film transistor T 0.
  • each thin film transistor T 0 in each row detection circuit 01 is coupled to a driving signal line GL
  • the second electrode of each thin film transistor T 0 in each column detection circuit 01 is connected to a read signal line RL. Coupling.
  • one detection includes an exposure stage S 1 and a reading stage S 2 .
  • the photosensitive element PIN 0 can convert the light signal it receives into a corresponding electric signal, and transmit the electric signal to the photosensitive element PIN 0
  • the thin film transistor T 0 is turned off under the control of the non-operating level of the scanning voltage signal transmitted by the driving signal line GL. Therefore, in the exposure stage S 1 , the second electrode of the photosensitive element PIN 0 and the thin film transistor T 0 Photoelectric charges can be continuously accumulated between the first poles.
  • the thin film transistor T 0 is turned on under the control of the operating level of the scanning voltage signal transmitted by the driving signal line GL, so that the second electrode of the photosensitive element PIN 0 is different from the first electrode of the thin film transistor T 0
  • the electrical signal (that is, the accumulated photocharge) is transmitted to the read signal line RL through the thin film transistor T 0 , and is output by the read signal line RL, that is, the read signal line RL outputs a photocurrent.
  • the operating levels of the scanning voltage signals are sequentially transmitted through a plurality of driving signal lines GL (such as driving signal lines GL 1 and driving signal lines GL 2 ), so that the detection circuits 01 of each row are sequentially transmitted photocurrent output which accumulated exposure phase S 1, according to differences of the current detection circuit 01 outputs, to achieve detection of the valleys of the fingerprint pattern of ridges.
  • driving signal lines GL such as driving signal lines GL 1 and driving signal lines GL 2
  • the intensity of the external ambient light is likely to change, so that the amount of light received by the photosensitive element PIN 0 in each detection circuit 01 within a unit time is also likely to change.
  • the photosensitive detection circuit 10 includes a photosensitive sub-circuit 101, a detection node P, an output sub-circuit 102 and a detection sub-circuit 103.
  • the detection node P does not represent a certain actual component, but can represent the junction of related circuit connections in the circuit diagram, that is, the detection node P is a junction of related electrical connections in the circuit diagram, etc. Effective node.
  • the photosensitive sub-circuit 101 is coupled to the reference voltage signal terminal Vbias and the detection node P.
  • the photosensitive sub-circuit 101 is configured to sense the intensity of light, generate an electrical signal, and transmit the electrical signal to the detection node P. For example, during the period when the reference voltage signal terminal Vbias transmits a voltage signal to the photosensitive sub-circuit 101, the stronger the received light intensity of the photosensitive sub-circuit 101, the more photocharges transmitted from the photosensitive sub-circuit 101 to the detection node P, and the greater the potential of the detection node P The lower.
  • the output sub-circuit 102 is coupled to the scanning voltage signal terminal Gate, the detection node P, and the output signal terminal Output.
  • the output sub-circuit 102 is configured to be turned off under the control of the non-operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate to expose the photosensitive sub-circuit 101. At this time, because the output sub-circuit 102 is turned off, the detection node P can continuously accumulate photocharges, and the more the photocharges at the detection node P accumulate, the lower the potential of the detection node P will be.
  • the output sub-circuit 102 is also configured to be turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate to detect the electrical signal at the node P (that is, during the process of exposing the photosensitive sub-circuit 101) , The photocharge accumulated at the detection node P) is transmitted to the output signal terminal Output, and at the same time, the photosensitive sub-circuit 101 is reset. It should be noted that after multiple photosensitive detection circuits are applied to the display device, the electrical signal is output through the output signal terminal Output of each photosensitive detection circuit, and the display device can realize a specific function according to the difference between the electrical signals (such as fingerprint recognition, touch detection, etc.).
  • the detection sub-circuit 103 is coupled to the detection node P, the first voltage signal terminal Vdd, and the detection signal terminal Test, and is configured to transmit a detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P. For example, during the transmission of the voltage signal at the first voltage signal terminal Vdd, if the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so that the voltage at point P can be determined based on the detection signal. It should be noted here that there is a relative relationship between the voltage at point P and the received light intensity of the photosensitive sub-circuit, and this relative relationship can be obtained through a calibration test in advance.
  • the voltage at point P and the received light intensity of the photosensitive sub-circuit have a linear function relationship. According to the linear function relationship, a minimum value of point P can be obtained. When the voltage at point P reaches this minimum value, it can be considered that the photosensitive sub-circuit 101 has just reached the saturation state at this time.
  • the detection sub-circuit 103 is coupled to the detection node P, the first voltage signal terminal Vdd, and the detection signal terminal Test, so that The detection sub-circuit 103 can transmit the detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P.
  • the voltage at point P can be determined according to the detection signal transmitted by the detection sub-circuit 103 in real time, so as to determine whether the photosensitive sub-circuit 101 is In a saturated state.
  • the output sub-circuit 102 can be opened in time when the photosensitive sub-circuit 101 is saturated or before saturation to reset the photosensitive sub-circuit 101, and the problem of the detection accuracy reduction caused by the over-exposure of the photosensitive sub-circuit 101 can be improved.
  • the above-mentioned photosensitive detection circuit 10 can be used to implement various detection functions, such as touch detection and fingerprint detection.
  • various detection functions such as touch detection and fingerprint detection.
  • the electrical signal output by the output signal terminal Output of the photosensitive detection circuit usually needs to be converted from analog to digital converter (Analog to Digital Converter, ADC) to obtain the corresponding
  • ADC Analog to Digital Converter
  • the digital signal is transmitted to the image processor to realize the pattern detection, for example, the fingerprint image of the surface of the finger is obtained, and the fingerprint image can be used for fingerprint identification.
  • the photosensitive detection circuit provided by the embodiment of the present disclosure can promptly turn on the output sub-circuit 102 to reset the photosensitive sub-circuit 101 when the photosensitive sub-circuit 101 is saturated or before it is saturated, so that the output generated by each exposure can be controlled.
  • the amount of semaphore is helpful to set the dynamic range of the ADC to be smaller to further improve the detection accuracy.
  • the photosensitive sub-circuit 101 includes a photodiode PIN.
  • the first pole (such as the anode) of the photodiode PIN can be coupled to the aforementioned reference voltage signal terminal Vbias, and the second pole (such as the cathode) of the photodiode ) Can be coupled to the detection node P described above.
  • the photodiode PIN can be in a reverse bias state.
  • the photodiode PIN can convert the received light signal into a corresponding And transmit the electrical signal to the detection node P.
  • photosensitive sub-circuit 101 may also include thin film transistors and other types of photosensitive elements, and the embodiment of the present disclosure does not limit the types of photosensitive elements.
  • the output sub-circuit 102 includes a switching transistor T 1 , the control electrode of the switching transistor T 1 is coupled to the scanning voltage signal terminal Gate, and the first electrode of the switching transistor T 1 is coupled to the detection node P , a second electrode of the switching transistor T 1 and the signal output coupled to the output.
  • the switching transistor T under control of the non-operating level of a scanning signal voltage of the scanning signal transmitted Gate terminal is closed to the photosensitive sub-circuit 101 is exposed. At this time, since the switching transistor T 1 off, so that the detection at the node P can continue to accumulate photocharge, P and photocharge accumulated at the sense node, the more the potential of the node P low detection.
  • the switching transistor T 1 under the control of the working level of the scanning signal terminal voltage of the scanning signal transmitted Gate opened to detect the electrical signal at node P (i.e., in the process of exposing the photosensitive sub-circuit 101, the The photoelectric charge accumulated at the detection node P) is transmitted to the output signal terminal Output, and the photosensitive sub-circuit 101 is reset.
  • the detection sub-circuit 103 includes a detection transistor T 2 , the control electrode of the detection transistor T 2 is coupled to the detection node P, and the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd Then, the second electrode of the detection transistor T 2 is coupled to the detection signal terminal Test.
  • the control electrode of the transistor T 2 is detected (i.e.
  • the current detecting transistor T between a first electrode and a second detection transistor T 2 electrode 2 will also ensue changes, e.g., when detecting transistor T 2 is a P-type transistor, the first transistor T is detected and the detection electrode of the transistor T 2 is greater the current between the second electrode 2, then the lower the voltage at point P; when detecting when the transistor T 2 is an N-type transistor, a current detecting transistor T between a first electrode and a second detection transistor T 2 is smaller electrode 2, the lower the voltage of the point P. Therefore, during the transmission of the voltage signal at the first voltage signal terminal Vdd, if the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so that the voltage at point P can be determined based on the detection signal.
  • the transistors used in the embodiments of the present disclosure may be thin film transistors, field effect transistors, or other switching devices with the same characteristics.
  • thin film transistors are used as examples for description.
  • the source and drain of the thin film transistor used here can be symmetrical in structure, so the source and drain can be structurally indistinguishable.
  • the gate of the thin film transistor is the control electrode, and in order to distinguish the two poles of the thin film transistor other than the gate, for example, one pole can be directly described as the first pole and the other pole is the second pole.
  • the transistors are all described by taking the P-type transistor as an example. It should be noted that the embodiments of the present disclosure include but are not limited to this.
  • one or more transistors in the circuit provided by the embodiments of the present disclosure can also be N-type transistors, and it is only necessary to connect the poles of the selected type of transistor with reference to the poles of the corresponding transistors in the embodiment of the present disclosure. , And make the corresponding voltage terminal provide the corresponding high voltage or low voltage.
  • Some embodiments of the present disclosure also provide a light signal detection method, which is applied to the photosensitive detection circuit 10 in any of the above-mentioned embodiments. See FIG. 1, FIG. 3, and FIG. 4.
  • the photosensitive detection circuit 10 includes at least a photosensitive sub-circuit. 101 and output sub-circuit 102.
  • one detection L includes a plurality of detection periods, and each of the plurality of detection periods includes an exposure sub-period L 1 and a reset sub-period L 2 .
  • the exposure sub-period L 1 includes:
  • the reset sub-period L 2 includes:
  • S22 Control the level of the scanning voltage signal to switch to the working level, so that the output sub-circuit 102 is turned on, the electrical signal is transmitted to the output signal terminal, and the photosensitive sub-circuit is reset.
  • one of the working level and the non-working level of the scanning voltage signal is a high level, and the other is a low level.
  • the output sub-circuit 102 includes a switching transistor T 1 and the switching transistor T 1 is a P-type transistor, the operating level of the scanning voltage signal is low, and the scanning voltage signal is inactive.
  • the level is high; for another example, in the case where the output sub-circuit 102 includes an N-type transistor (not shown), the working level of the scanning voltage signal is high, and the non-working level of the scanning voltage signal is low Level.
  • the sum of the exposure sub-periods of the multiple detection periods is the total exposure time required for one detection. Therefore, the signal value obtained by superimposing the signal amount generated in each exposure sub-period is the signal value corresponding to one detection.
  • the total exposure time required for one detection is usually determined according to the specific detection function. For example, when the fingerprint detection function is implemented, the total exposure time required for one detection is usually about 100 milliseconds, that is, The amount of signal generated by the exposure time of about 100 milliseconds can be used to realize fingerprint recognition.
  • the optical signal detection method provided by the embodiment of the present disclosure divides one detection into multiple detection periods, and each detection period includes the above-mentioned exposure sub-period L 1 and reset sub-period L 2 , so that each exposure sub-period L 1 Only a small amount of time is exposed, and the photosensitive sub-circuit 101 is reset through the reset sub-period L 2 after each exposure, so the resolution of the ADC can be set to be smaller, and it is only necessary to make each exposure sub-period L 1
  • the amount of signal generated does not exceed the dynamic range of the ADC to meet the detection requirements. For example, assuming that an ADC with 16-bit resolution is required for one detection before, the optical signal detection method according to the embodiment of the present disclosure divides one detection into two.
  • the detection time period is divided into a plurality of detection, while each of the detection period comprises a reset period of the sub, so that the photosensitive sub-circuit 101 in the sub-exposure period L 1 is not easily saturated, and further improved by the photosensitive The detection accuracy of the sub-circuit 101 is reduced due to overexposure.
  • the photosensitive sub-circuit 101 may include a photodiode PIN, a first pole (such as an anode) of the photodiode PIN may be coupled to the reference voltage signal terminal Vbias, and a second pole of the photodiode ( For example, the cathode) can be coupled to the detection node P.
  • Said output sub-circuit 102 may include a switch transistor T 1, the switching transistor T 1 to the control electrode voltage of the scanning signal Gate terminal coupled to a first electrode of the switching transistor T 1 and the sense node is coupled to P, a second switching transistor T 1 The pole is coupled to the output signal terminal Output.
  • the bias voltage signal is transmitted to the first pole of the photodiode PIN through the above-mentioned reference voltage signal terminal Vbias, so that the photodiode PIN is in a reverse bias state.
  • the photodiode PIN can receive The optical signal is converted into a corresponding electrical signal, and the electrical signal is transmitted to the detection node P.
  • the switching transistor T 1 under the control of the non-operating level of the scanning voltage signal a scan signal transmitted Gate closed end, for exposure of the PIN photodiode, this time, since the switching transistor T 1 off, so that at the sense node P The photocharges can be accumulated continuously, and the more photocharges at the detection node P are accumulated, the lower the potential of the detection node P will be.
  • the switching transistor T 1 is turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate, so as to detect the electrical signal at the node P (that is, when the photosensitive sub-circuit 101 During the exposure process, the photoelectric charge accumulated at the detection node P) is transferred to the output signal terminal Output, and the photodiode PIN is reset.
  • the electrical signals transmitted to the output signal terminal Output in each reset sub-period are superimposed to obtain a detection signal corresponding to the above-mentioned one detection.
  • the inventors of the present disclosure have discovered through research that the more the number of detection periods is set, the more beneficial it is to avoid overexposure of the photosensitive sub-circuit, and the more beneficial it is to set the dynamic range of the ADC to be smaller to improve the output accuracy.
  • the number of detection periods included in the above-mentioned one detection is set to 2-20.
  • the number of detection periods included in the above-mentioned one detection can be 2, 5, 6, 12, 16, 18, or 20, which is beneficial to avoid overexposure of the photosensitive sub-circuit, and the ADC
  • the dynamic range is set to be smaller, while also avoiding excessive noise. It should be noted that with the increase of external ambient light, the number of detection periods included in the above-mentioned one detection can also be further increased, which is not limited in the present disclosure.
  • the photosensitive detection circuit further includes a detection node P and a detection sub-circuit 103
  • the optical signal detection method further includes:
  • the detection signal determine whether the voltage of the detection node P reaches the preset voltage; if so, control the scanning voltage signal to switch from a non-operating level to a working level.
  • the detection sub-circuit 103 can transmit the detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P, by receiving the detection signal transmitted by the detection sub-circuit 103 in real time from the detection signal terminal Test, and according to the The detection signal determines the voltage of point P.
  • the scanning voltage signal is controlled to switch from the non-operating level to the operating level, which can be realized when the photosensitive sub-circuit 101 is just saturated
  • the output sub-circuit 102 is turned on in time to reset the photosensitive sub-circuit 101, thereby improving the problem of the detection accuracy reduction caused by the over-exposure of the photosensitive sub-circuit 101.
  • the detection sub-circuit 103 may include a detection transistor, the control electrode of the detection transistor T 2 is coupled to the detection node P, the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd, and the detection transistor T 2 The second pole of is coupled to the detection signal terminal Test.
  • the first voltage signal terminal Vdd transmits a voltage signal to the second electrode of the detection transistor.
  • the scanning voltage signal is controlled to switch from a non-operating level to a working level to turn on the output sub-circuit and transmit the electrical signal at the detection node P to the output signal terminal Output, That is to realize the reset of the photosensitive sub-circuit.
  • the above-mentioned preset voltage is the minimum value of the voltage of the detection node P when the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship.
  • the minimum value of the voltage of the detection node P is obtained through the calibration test.
  • the calibration test refers to measuring the corresponding relationship between the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit with a standard measuring instrument in advance, so that the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship At this time, the minimum value of the voltage of the node P is detected, and the minimum value of the voltage of the detection node P is recorded.
  • the light signal detection device 20 includes a processor 202 and a memory 201.
  • the memory 201 stores computer program instructions. When the computer program instructions are executed by the processor 202, one or more steps in the optical signal detection method as in any of the foregoing embodiments are implemented.
  • the optical signal detection system 30 includes a photosensitive detection circuit 10 and an optical signal detection device 20.
  • the photosensitive detection circuit 10 includes a photosensitive sub-circuit 101 and an output sub-circuit 102.
  • the photosensitive sub-circuit 101 is coupled to the reference voltage signal terminal Vbias, and the output sub-circuit 102 is connected to the scanning voltage signal terminal Gate, the photosensitive sub-circuit 101 and the output signal terminal Output Coupling.
  • the optical signal detection device is at least coupled to the scanning voltage signal terminal Gate, and the optical signal detection device 20 is configured to perform multiple detection periods in one detection, and control the scanning voltage signal terminal Gate to transmit during the exposure sub-period of each detection period.
  • the level of the scanning voltage signal is a non-operating level, and in the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to be the operating level.
  • the optical signal detection system can use the optical signal detection device 20 to perform multiple detection periods in one detection. Because of the exposure sub-period of each detection period, the scanning voltage signal terminal Gate transmits the scanning The level of the voltage signal is a non-operating level. In the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level, so that each exposure sub-period is only exposed for a small amount of time, and after each exposure The photosensitive sub-circuit 101 is reset through the reset sub-period, so the resolution of the ADC can be set smaller.
  • the optical signal detection method of the embodiment of the present disclosure is used to divide one detection into two detection periods, only an 8-bit resolution is required.
  • the ADC can meet the detection requirements.
  • the 8-bit resolution ADC has a smaller dynamic range, it also helps to improve the output accuracy of the signal.
  • the optical signal detection device 20 is used to divide one detection into multiple detection periods, and each detection period includes a reset sub-period, the photosensitive sub-circuit 101 is not easily saturated in each exposure sub-period. Furthermore, the problem of reduced detection accuracy caused by overexposure of the photosensitive sub-circuit 101 is also improved.
  • the photosensitive detection circuit further includes a detection sub-circuit 103 and a detection node P.
  • the detection sub-circuit 103, the photosensitive sub-circuit 101 and the output sub-circuit 102 are coupled to the detection node P, and the detection sub-circuit 103 is also coupled to the first voltage signal terminal Vdd and the detection signal terminal Test.
  • the detection sub-circuit 103 is configured to transmit a detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P.
  • the optical signal detection device 20 is also coupled to the detection signal terminal Test.
  • the optical signal detection device 20 is also configured to determine whether the voltage of the detection node reaches the preset voltage according to the detection signal; if so, control the level of the scanning voltage signal to switch from a non-operating level to a working level.
  • the photosensitive sub-circuit 101 may include a photodiode PIN, a first pole (such as an anode) of the photodiode PIN may be coupled to the reference voltage signal terminal Vbias, and a second pole of the photodiode ( For example, the cathode) can be coupled to the detection node P.
  • Said output sub-circuit 102 may include a switch transistor T 1, the switching transistor T 1 to the control electrode voltage of the scanning signal Gate terminal coupled to a first electrode of the switching transistor T 1 and the sense node is coupled to P, a second switching transistor T 1 The pole is coupled to the output signal terminal Output.
  • the detection sub-circuit 103 may include a detection transistor, the control electrode of the detection transistor T 2 is coupled to the detection node P, the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd, and the second electrode of the detection transistor T 2 Coupled with the test signal terminal Test.
  • the optical signal detection device 20 is also coupled to the reference voltage signal terminal Vbias, the first voltage signal terminal Vdd, and the output signal terminal Output.
  • the optical signal detection device 20 is also configured to transmit a bias voltage signal to the first pole of the photodiode PIN through the reference voltage signal terminal Vbias during the exposure sub-period, so that the photodiode PIN is in a reverse bias state. At this time, The photodiode PIN can convert the received optical signal into a corresponding electrical signal, and transmit the electrical signal to the detection node P.
  • a voltage signal is transmitted to the second electrode of the detection transistor through the first voltage signal terminal Vdd.
  • the detection signal transmitted in real time will also change accordingly.
  • the detection signal determines the voltage at point P.
  • the scanning voltage signal is controlled to switch from a non-operating level to a working level to turn on the output sub-circuit and transmit the electrical signal at the detection node P to the output signal terminal Output, That is to realize the reset of the photosensitive sub-circuit.
  • the control switch transistor T 1 is turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate, so as to detect the electrical signal at the node P (that is, in the sensing sub-circuit During the exposure process of 101, the photocharge accumulated at the detection node P) is transferred to the output signal terminal Output, so as to reset the photodiode PIN.
  • the electrical signals transmitted to the output signal terminal Output in each reset sub-period are superimposed to obtain a detection signal corresponding to the above-mentioned one detection.
  • the display device 40 includes a display panel 41 and an optical signal detection device 20 as in any of the above-mentioned embodiments.
  • the display panel 41 includes a base substrate 411 and a photosensitive detection circuit 10 disposed on the base substrate 411.
  • the optical signal detection device 20 is coupled to the photosensitive detection circuit 10.
  • the display device 40 provided in this embodiment can perform multiple detection periods in one detection through the photosensitive detection circuit 10 and the optical signal detection device 20. Since the exposure sub-period of each detection period, the scanning voltage signal terminal Gate transmits The level of the scanning voltage signal is a non-operating level. In the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level, so that each exposure sub-period is only exposed for a small amount of time, and each exposure After that, the photosensitive sub-circuit 101 is reset through the reset sub-period, so the resolution of the ADC can be set smaller. It is only necessary to make the signal generated by each exposure sub-period not exceed the dynamic range of the ADC to meet the detection requirements.
  • the photosensitive detection circuit in the display device 40 is the photosensitive detection circuit 10 in any of the embodiments described above.
  • the number of photosensitive detection circuits 10 is multiple, and the plurality of photosensitive detection circuits 10 are arranged into multiple rows of photosensitive detection circuits 10. It should be noted that only part of the photosensitive detection circuit 10 is shown in FIG. 9. In practical applications, the number of photosensitive detection circuits 10 can be reasonably set according to the size of the display device 40 and usage requirements.
  • the display panel 41 further includes a plurality of detection signal lines TL (such as the detection signal line TL 1 and the detection signal line TL 2 ) arranged on the base substrate 411.
  • a detection sub-circuit is coupled to one of the detection signal lines through the detection signal terminal Test.
  • each detection signal line can output the voltage of the detection node P of at least one photosensitive detection circuit in a row of photosensitive detection circuits.
  • the display panel 41 also includes a plurality of driving signal lines GL (such as a driving signal line GL 1 and a driving signal line GL 2 ) and a plurality of reading signal lines RL (such as a reading signal line RL 1 and a reading signal line RL 2 ) .
  • the control electrode of each thin film transistor T 0 in each row detection circuit 01 is coupled to a driving signal line GL
  • the second electrode of each thin film transistor T 0 in each column detection circuit 01 is coupled to a read signal line RL .
  • the optical signal detection device 20 is configured such that, for each row of photosensitive detection circuits 10, one detection includes multiple detection periods, and each detection period includes exposure sub-periods. Period L 1 and reset sub-period L 2 .
  • each line of the photodetector circuit 10 sequentially outputs an exposure time sub-intervals of each detection period L 1 of generated
  • the electrical signal wherein the electrical signal output by each photosensitive detection circuit 10 in each row of photosensitive detection circuits 10 can be transmitted to the optical signal detection device 20 by the read signal line RL to which it is coupled.
  • the optical signal detecting means 20 may be a plurality of exposure of the sub-period L of the electrical signal generated comprises a detection superimposed to obtain the total electric signal according to each of the photosensitive further The difference between the total electrical signals output by the detection circuit 10 realizes the pattern detection of the fingerprint valley ridges.
  • the photosensitive detection circuit and the optical signal detection device in the display device are not limited to being used to realize fingerprint detection, and can also be used to realize other photoelectric (signal) detection functions, such as touch detection, X-ray detection, etc.
  • the embodiment of the present disclosure does not limit this.
  • the display device provided by the embodiment of the present disclosure can be any product with display function such as liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, TV, monitor, notebook computer, digital photo frame, navigator, etc. Or components, the present disclosure does not limit this.

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Abstract

A photosensitive detection circuit comprises a light-sensing sub-circuit, an output sub-circuit, and a detection sub-circuit. The light-sensing sub-circuit is coupled with a reference voltage signal terminal and a detection node, and is configured to sense the intensity of light, to generate an electrical signal, and to transmit the electrical signal to the detection node. The output sub-circuit is coupled with a scanning voltage signal terminal, the detection node, and an output signal terminal. The output sub-circuit is configured to turn off when controlled by a non-operating level of a scanning voltage signal transmitted by a scanning signal terminal, such that the light-sensing sub-circuit undergoes exposure processing, and is configured to turn on when controlled by an operating level of the scanning voltage signal, so as to transmit the electrical signal to the output signal terminal. The detection sub-circuit is coupled with the detection node, a first voltage signal terminal and a detection signal terminal, and is configured to transmit, in response to a voltage of the detection node, a detection signal to the detection signal terminal in real time.

Description

光敏检测电路、光信号检测方法、装置及***、显示装置Photosensitive detection circuit, light signal detection method, device and system, display device 技术领域Technical field
本公开涉及一种光敏检测电路、光信号检测方法、装置及***、显示装置。The present disclosure relates to a photosensitive detection circuit, a light signal detection method, device and system, and a display device.
背景技术Background technique
随着电子技术的不断发展,显示装置可以将不同强度的光线转化为不同大小的光电流,从而实现特定的功能(如指纹识别、触控检测等)。例如,指纹谷脊间存在差异,光源照射到手上会产生不同强度的反射光线,显示装置接收到不同强度的反射光线后会产生不同的光电流,进而可以确定出指纹图案。With the continuous development of electronic technology, display devices can convert light of different intensities into photocurrents of different sizes, thereby achieving specific functions (such as fingerprint recognition, touch detection, etc.). For example, there is a difference between the fingerprint valleys, the light source irradiates the hand to produce different intensities of reflected light, and the display device receives different intensities of reflected light to generate different photocurrents, and then the fingerprint pattern can be determined.
公开内容Public content
一方面,提供一种光敏检测电路。所述光敏检测电路包括感光子电路、输出子电路和检测子电路。其中,感光子电路与参考电压信号端及检测节点耦接,被配置为感应光线强度,产生电信号,并将电信号传输至检测节点。输出子电路与扫描电压信号端、检测节点及输出信号端耦接。输出子电路被配置为,在扫描信号端所传输的扫描电压信号的非工作电平的控制下关闭,以对感光子电路进行曝光;及,在扫描电压信号的工作电平的控制下打开,以将电信号传输至输出信号端。检测子电路与检测节点、第一电压信号端及检测信号端耦接,被配置为响应于检测节点的电压,向检测信号端实时传输检测信号。In one aspect, a photosensitive detection circuit is provided. The photosensitive detection circuit includes a photosensitive sub-circuit, an output sub-circuit and a detection sub-circuit. Wherein, the photosensitive sub-circuit is coupled to the reference voltage signal terminal and the detection node, and is configured to sense light intensity, generate an electrical signal, and transmit the electrical signal to the detection node. The output sub-circuit is coupled with the scanning voltage signal terminal, the detection node and the output signal terminal. The output sub-circuit is configured to be closed under the control of the non-operating level of the scanning voltage signal transmitted by the scanning signal terminal to expose the photosensitive sub-circuit; and open under the control of the operating level of the scanning voltage signal, To transmit the electrical signal to the output signal terminal. The detection sub-circuit is coupled to the detection node, the first voltage signal terminal and the detection signal terminal, and is configured to transmit the detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
在一些实施例中,感光子电路包括光敏二极管,光敏二极管的第一极与参考电压信号端耦接,光敏二极管的第二极与检测节点耦接。In some embodiments, the photosensitive sub-circuit includes a photodiode, the first pole of the photodiode is coupled to the reference voltage signal terminal, and the second pole of the photodiode is coupled to the detection node.
在一些实施例中,输出子电路包括开关晶体管,开关晶体管的控制极与扫描电压信号端耦接,开关晶体管的第一极与检测节点耦接,开关晶体管的第二极与输出信号端耦接。In some embodiments, the output sub-circuit includes a switching transistor, the control electrode of the switching transistor is coupled to the scanning voltage signal terminal, the first electrode of the switching transistor is coupled to the detection node, and the second electrode of the switching transistor is coupled to the output signal terminal. .
在一些实施例中,检测子电路包括检测晶体管,检测晶体管的控制极与检测节点耦接,检测晶体管的第一极与第一电压信号端耦接,检测晶体管的第二极与检测信号端耦接。In some embodiments, the detection sub-circuit includes a detection transistor, the control electrode of the detection transistor is coupled to the detection node, the first electrode of the detection transistor is coupled to the first voltage signal terminal, and the second electrode of the detection transistor is coupled to the detection signal terminal. catch.
另一方面,提供一种光信号检测方法。光信号检测方法应用于光敏检测电路,光敏检测电路包括感光子电路和输出子电路。一次检测包括多个检测时段,多个检测时段中的每个检测时段包括曝光子时段和重置子时段。其中,曝光子时段,控制扫描电压信号的电平为非工作电平,使输出子电路关闭, 感光子电路感应光线强度,产生电信号;重置子时段,控制扫描电压信号的电平切换为工作电平,使输出子电路打开,电信号传输至输出信号端,并对感光子电路重置。多个检测时段的曝光子时段之和为进行一次检测所需要的总曝光时长。On the other hand, an optical signal detection method is provided. The optical signal detection method is applied to a photosensitive detection circuit, which includes a photosensitive sub-circuit and an output sub-circuit. One detection includes multiple detection periods, and each of the multiple detection periods includes an exposure sub-period and a reset sub-period. Among them, in the exposure sub-period, the level of the scanning voltage signal is controlled to be at a non-operating level, so that the output sub-circuit is closed, and the photosensitive sub-circuit senses the light intensity to generate an electrical signal; in the reset sub-period, the level of the control scanning voltage signal is switched to The working level enables the output sub-circuit to open, the electrical signal is transmitted to the output signal terminal, and the photosensitive sub-circuit is reset. The sum of the exposure sub-periods of multiple detection periods is the total exposure time required for one detection.
在一些实施例中,光敏检测电路还包括检测子电路。光信号检测方法还包括:从检测信号端处接收检测信号,检测信号为检测子电路响应于检测节点的电压向检测信号端实时传输的信号;根据检测信号,判断检测节点的电压是否达到预设电压;若是,则控制扫描电压信号由非工作电平切换为工作电平。In some embodiments, the photosensitive detection circuit further includes a detection sub-circuit. The optical signal detection method also includes: receiving a detection signal from the detection signal terminal, the detection signal is a signal that the detection sub-circuit transmits to the detection signal terminal in real time in response to the voltage of the detection node; and judging whether the voltage of the detection node reaches a preset value according to the detection signal Voltage; if it is, control the scanning voltage signal to switch from a non-operating level to a working level.
在一些实施例中,预设电压为,检测节点的电压与感光子电路的受光强度满足一次函数关系时,检测节点的电压的最小值。所述检测节点的电压的最小值通过标定测试得到。In some embodiments, the preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship. The minimum value of the voltage of the detection node is obtained through a calibration test.
在一些实施例中,所述一次检测所包括的检测时段的个数为2个~20个。In some embodiments, the number of detection periods included in the one detection is 2-20.
又一方面,提供一种光信号检测装置。所述光信号检测装置,包括处理器和存储器,存储器上存储有计算机程序指令,当存储器存储的计算机程序指令被处理器执行时,实现如上述任一项实施例所述的光信号检测方法中的一个或多个步骤。In another aspect, an optical signal detection device is provided. The optical signal detection device includes a processor and a memory, and computer program instructions are stored in the memory. When the computer program instructions stored in the memory are executed by the processor, the optical signal detection method according to any one of the above embodiments is implemented. One or more steps.
又一方面,提供一种光信号检测***。所述光信号检测***包括光敏检测电路和光信号检测装置。其中,所述光敏检测电路包括感光子电路和输出子电路,所述感光子电路与参考电压信号端耦接,所述输出子电路与扫描电压信号端、所述感光子电路及输出信号端耦接。述光信号检测装置与所述扫描电压信号端耦接,所述光信号检测装置被配置为,在一次检测中执行多个检测时段,在每个检测时段的曝光子时段,控制所述扫描电压信号端传输的扫描电压信号的电平为非工作电平,在每个检测时段的重置子时段,控制所述扫描电压信号的电平为工作电平。In another aspect, an optical signal detection system is provided. The optical signal detection system includes a photosensitive detection circuit and an optical signal detection device. Wherein, the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit, the photosensitive sub-circuit is coupled to the reference voltage signal terminal, the output sub-circuit is coupled to the scanning voltage signal terminal, the photosensitive sub-circuit and the output signal terminal catch. The optical signal detection device is coupled to the scanning voltage signal terminal, and the optical signal detection device is configured to execute multiple detection periods in one detection, and control the scanning voltage in the exposure sub-period of each detection period The level of the scanning voltage signal transmitted by the signal terminal is the non-operating level, and in the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level.
在一些实施例中,光敏检测电路还包括检测子电路,检测子电路、感光子电路和输出子电路与检测节点耦接。检测子电路还与第一电压信号端及检测信号端耦接,检测子电路被配置为响应于检测节点的电压,向检测信号端实时传输检测信号。光信号检测装置还与检测信号端耦接,光信号检测装置还被配置为,根据检测信号,判断检测节点的电压是否达到预设电压;若是,则控制扫描电压信号的电平由非工作电平切换为工作电平。In some embodiments, the photosensitive detection circuit further includes a detection sub-circuit, and the detection sub-circuit, the photosensitive sub-circuit and the output sub-circuit are coupled to the detection node. The detection sub-circuit is also coupled to the first voltage signal terminal and the detection signal terminal, and the detection sub-circuit is configured to transmit the detection signal to the detection signal terminal in real time in response to the voltage of the detection node. The optical signal detection device is also coupled to the detection signal terminal. The optical signal detection device is also configured to determine whether the voltage of the detection node reaches the preset voltage according to the detection signal; if it is, the level of the control scanning voltage signal is changed from the non-operating voltage Switch to working level.
在一些实施例中,预设电压为,检测节点的电压与感光子电路的受光强度满足一次函数关系时,检测节点的电压的最小值。所述检测节点的电压的 最小值通过标定测试得到。In some embodiments, the preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship. The minimum value of the voltage of the detection node is obtained through a calibration test.
在一些实施例中,所述一次检测所包括的检测时段的个数为2个~20个。In some embodiments, the number of detection periods included in the one detection is 2-20.
又一方面,提供一种显示装置。所述显示装置包括显示面板和如上述任一项实施例所述的光信号检测装置。所述显示面板包括衬底基板,及设置于衬底基板上的光敏检测电路。所述光信号检测装置与所述光敏检测电路耦接。In another aspect, a display device is provided. The display device includes a display panel and the optical signal detection device according to any one of the above embodiments. The display panel includes a base substrate and a photosensitive detection circuit arranged on the base substrate. The optical signal detection device is coupled to the photosensitive detection circuit.
在一些实施例中,光敏检测电路为如上述任一项实施例所述的光敏检测电路。光敏检测电路的数量为多个,多个光敏检测电路排列成多行光敏检测电路。显示面板还包括设置于衬底基板上的多条检测信号线,多行光敏检测电路中的至少一行光敏检测电路的至少一个检测子电路通过检测信号端与多条检测信号线中的一条检测信号线耦接。In some embodiments, the photosensitive detection circuit is the photosensitive detection circuit described in any of the above embodiments. The number of photosensitive detection circuits is multiple, and the multiple photosensitive detection circuits are arranged into multiple rows of photosensitive detection circuits. The display panel further includes a plurality of detection signal lines arranged on the base substrate, and at least one detection sub-circuit of at least one line of the photosensitive detection circuit in the plurality of rows of photosensitive detection circuits communicates with one of the plurality of detection signal lines through the detection signal terminal.线连接。 Line coupling.
附图说明Description of the drawings
为了更清楚地说明本公开中的技术方案,下面将对本公开一些实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本公开的一些实施例的附图,对于本领域普通技术人员来讲,还可以根据这些附图获得其他的附图。此外,以下描述中的附图可以视作示意图,并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程、信号的实际时序等的限制。In order to explain the technical solutions of the present disclosure more clearly, the following will briefly introduce the drawings that need to be used in some embodiments of the present disclosure. Obviously, the drawings in the following description are merely appendices to some embodiments of the present disclosure. Figures, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual size of the product, the actual process of the method, and the actual timing of the signal involved in the embodiments of the present disclosure.
图1为根据相关技术中的检测电路的结构图;Figure 1 is a structural diagram of a detection circuit according to the related art;
图2为根据相关技术中的检测电路的驱动方法的时序图;FIG. 2 is a timing diagram of a driving method of a detection circuit according to the related art;
图3为根据本公开一些实施例的光敏检测电路的一种结构图;Fig. 3 is a structural diagram of a photosensitive detection circuit according to some embodiments of the present disclosure;
图4为根据本公开一些实施例的光敏检测电路的另一种结构图;Figure 4 is another structural diagram of a photosensitive detection circuit according to some embodiments of the present disclosure;
图5为根据本公开一些实施例的光敏检测电路的驱动方法的时序图;FIG. 5 is a timing diagram of a driving method of a photosensitive detection circuit according to some embodiments of the present disclosure;
图6为根据本公开一些实施例的光信号检测方法的流程图;Fig. 6 is a flowchart of an optical signal detection method according to some embodiments of the present disclosure;
图7为根据本公开一些实施例的光信号检测装置的框图;Figure 7 is a block diagram of an optical signal detection device according to some embodiments of the present disclosure;
图8为根据本公开一些实施例的光敏检测***的结构图;Figure 8 is a structural diagram of a photosensitive detection system according to some embodiments of the present disclosure;
图9为根据本公开一些实施例的显示装置的结构图;FIG. 9 is a structural diagram of a display device according to some embodiments of the present disclosure;
图10为根据本公开一些实施例的显示装置的驱动方法的时序图。FIG. 10 is a timing diagram of a driving method of a display device according to some embodiments of the present disclosure.
具体实施方式Detailed ways
下面将结合附图,对本公开一些实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开所提供的实施例,本领域普通技术人员所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions in some embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided in the present disclosure, all other embodiments obtained by those of ordinary skill in the art fall within the protection scope of the present disclosure.
除非上下文另有要求,否则,在整个说明书和权利要求书中,术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思,即为“包含,但不限于”。在说明书的描述中,术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外,所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and other forms such as the third-person singular form "comprises" and the present participle form "comprising" are used throughout the specification and claims. Interpreted as open and inclusive means "including, but not limited to." In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "examples", "specific examples" "example)" or "some examples" are intended to indicate that a specific feature, structure, material, or characteristic related to the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials, or characteristics described may be included in any one or more embodiments or examples in any suitable manner.
以下,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中,除非另有说明,“多个”的含义是两个或两个以上。Hereinafter, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.
在描述一些实施例时,可能使用了“耦接”和“连接”及其衍伸的表达。例如,描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如,描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。然而,术语“耦接”或“通信耦合(communicatively coupled)”也可能指两个或两个以上部件彼此间并无直接接触,但仍彼此协作或相互作用。这里所公开的实施例并不必然限制于本文内容。In describing some embodiments, the expressions "coupled" and "connected" and their extensions may be used. For example, the term "connected" may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other. For another example, the term "coupled" may be used when describing some embodiments to indicate that two or more components have direct physical or electrical contact. However, the term "coupled" or "communicatively coupled" may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.
相关技术中,如图1所示,显示装置00包括多条驱动信号线GL(如驱动信号线GL 1和驱动信号线GL 2)、多条读取信号线RL(如读取信号线RL 1和读取信号线RL 2)、以及阵列式排布的多个检测电路01。每个检测电路01由一个感光元件PIN 0和一个薄膜晶体管T 0组成。在每个检测电路01中,感光元件PIN 0的第一极与参考电压信号端Vbias耦接,感光元件PIN 0的第二极与薄膜晶体管T 0的第一极耦接。此外,各行检测电路01中的每个薄膜晶体管T 0的控制极与一条驱动信号线GL耦接,各列检测电路01中的每个薄膜晶体管T 0的第二极与一条读取信号线RL耦接。 In the related art, shown in Figure 1, display 00 comprises a plurality of signal lines GL driving means (driving signal lines GL 1 and the drive signal line GL 2), a plurality of read signal line RL (such as a read signal line RL 1 And the read signal line RL 2 ), and a plurality of detection circuits 01 arranged in an array. Each detection circuit 01 is composed of a photosensitive element PIN 0 and a thin film transistor T 0 . In each detection circuit 01, the first pole of the photosensitive element PIN 0 is coupled to the reference voltage signal terminal Vbias, and the second pole of the photosensitive element PIN 0 is coupled to the first pole of the thin film transistor T 0. In addition, the control electrode of each thin film transistor T 0 in each row detection circuit 01 is coupled to a driving signal line GL, and the second electrode of each thin film transistor T 0 in each column detection circuit 01 is connected to a read signal line RL. Coupling.
对于每个检测电路01,参见图2,一次检测包括曝光阶段S 1和读取阶段S 2。其中,在曝光阶段S 1,感光元件PIN 0在参考电压信号端Vbias所传输的电压的作用下,可以将其接收到的光信号转换为相应的电信号,并将该电信号传输至该感光元件PIN 0的第二极。此时,薄膜晶体管T 0在驱动信号线GL 所传输的扫描电压信号的非工作电平的控制下关闭,因此,在曝光阶段S 1,感光元件PIN 0的第二极与薄膜晶体管T 0的第一极之间可以不断地积累光电荷。在读取阶段S 2,薄膜晶体管T 0在驱动信号线GL所传输的扫描电压信号的工作电平的控制下打开,使感光元件PIN 0的第二极与薄膜晶体管T 0的第一极之间的电信号(也即所积累的光电荷)经薄膜晶体管T 0传输至读取信号线RL,由读取信号线RL输出,也即由读取信号线RL输出光电流。基于此,在进行指纹检测时,参见图2,通过多条驱动信号线GL(如驱动信号线GL 1和驱动信号线GL 2)依次传输扫描电压信号的工作电平,使各行检测电路01依次输出在其曝光阶段S 1积累的光电流,可以根据各检测电路01输出的电流差异,实现对指纹谷脊的图案检测。 For each detection circuit 01, referring to FIG. 2, one detection includes an exposure stage S 1 and a reading stage S 2 . Among them, in the exposure stage S 1 , under the action of the voltage transmitted by the reference voltage signal terminal Vbias, the photosensitive element PIN 0 can convert the light signal it receives into a corresponding electric signal, and transmit the electric signal to the photosensitive element PIN 0 The second pole of element PIN 0. At this time, the thin film transistor T 0 is turned off under the control of the non-operating level of the scanning voltage signal transmitted by the driving signal line GL. Therefore, in the exposure stage S 1 , the second electrode of the photosensitive element PIN 0 and the thin film transistor T 0 Photoelectric charges can be continuously accumulated between the first poles. In the reading phase S 2 , the thin film transistor T 0 is turned on under the control of the operating level of the scanning voltage signal transmitted by the driving signal line GL, so that the second electrode of the photosensitive element PIN 0 is different from the first electrode of the thin film transistor T 0 The electrical signal (that is, the accumulated photocharge) is transmitted to the read signal line RL through the thin film transistor T 0 , and is output by the read signal line RL, that is, the read signal line RL outputs a photocurrent. Based on this, when fingerprint detection is performed, referring to FIG. 2, the operating levels of the scanning voltage signals are sequentially transmitted through a plurality of driving signal lines GL (such as driving signal lines GL 1 and driving signal lines GL 2 ), so that the detection circuits 01 of each row are sequentially transmitted photocurrent output which accumulated exposure phase S 1, according to differences of the current detection circuit 01 outputs, to achieve detection of the valleys of the fingerprint pattern of ridges.
然而,上述检测过程中,由于外界环境光的强弱容易发生变化,导致各检测电路01中的感光元件PIN 0在单位时间内接收到的光量也很容易发生变化。这使得上述曝光阶段S 1中,如果外界环境光比较强,则感光元件PIN 0很容易出现过曝的情况,也即感光元件PIN 0饱和后,仍处于曝光状态,之后随着曝光时间的增加,感光元件PIN 0的第二极与薄膜晶体管T 0的第一极之间积累的光电荷将停止增加或增加的速度变慢,进而会导致各检测电路输出的电信号之间的差异减小,使得显示装置00的检测精度降低。 However, in the above-mentioned detection process, the intensity of the external ambient light is likely to change, so that the amount of light received by the photosensitive element PIN 0 in each detection circuit 01 within a unit time is also likely to change. This makes the exposure phase S 1, if strong ambient light, the photosensitive element is prone PIN 0 through exposure of the case, i.e. the photosensitive element after saturation PIN 0, is still in an exposure state, and then with increasing exposure time , The photocharge accumulated between the second pole of the photosensitive element PIN 0 and the first pole of the thin film transistor T 0 will stop increasing or increase at a slower rate, which will cause the difference between the electrical signals output by the detection circuits to decrease. , So that the detection accuracy of the display device 00 is reduced.
基于此,本公开一些实施例提供一种光敏检测电路。如图3所示,该光敏检测电路10包括感光子电路101、检测节点P、输出子电路102和检测子电路103。其中,需要说明的是,检测节点P并非表示一定实际存在的部件,而是可以表示电路图中相关电路连接的汇合点,也就是说,该检测节点P是由电路图中相关电连接的汇合点等效而成的节点。Based on this, some embodiments of the present disclosure provide a photosensitive detection circuit. As shown in FIG. 3, the photosensitive detection circuit 10 includes a photosensitive sub-circuit 101, a detection node P, an output sub-circuit 102 and a detection sub-circuit 103. Among them, it should be noted that the detection node P does not represent a certain actual component, but can represent the junction of related circuit connections in the circuit diagram, that is, the detection node P is a junction of related electrical connections in the circuit diagram, etc. Effective node.
感光子电路101与参考电压信号端Vbias及检测节点P耦接,感光子电路101被配置为感应光线强度,产生电信号,并将电信号传输至检测节点P。例如,在参考电压信号端Vbias向感光子电路101传输电压信号期间,感光子电路101的受光强度越强,由感光子电路101传输至检测节点P的光电荷越多,检测节点P的电位就越低。The photosensitive sub-circuit 101 is coupled to the reference voltage signal terminal Vbias and the detection node P. The photosensitive sub-circuit 101 is configured to sense the intensity of light, generate an electrical signal, and transmit the electrical signal to the detection node P. For example, during the period when the reference voltage signal terminal Vbias transmits a voltage signal to the photosensitive sub-circuit 101, the stronger the received light intensity of the photosensitive sub-circuit 101, the more photocharges transmitted from the photosensitive sub-circuit 101 to the detection node P, and the greater the potential of the detection node P The lower.
输出子电路102与扫描电压信号端Gate、检测节点P及输出信号端Output耦接。输出子电路102被配置为,在扫描信号端Gate所传输的扫描电压信号的非工作电平的控制下关闭,以对感光子电路101进行曝光。此时,由于输出子电路102关闭,使得检测节点P处可以不断地积累光电荷,而检测节点P处的光电荷积累的越多,检测节点P的电位就越低。The output sub-circuit 102 is coupled to the scanning voltage signal terminal Gate, the detection node P, and the output signal terminal Output. The output sub-circuit 102 is configured to be turned off under the control of the non-operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate to expose the photosensitive sub-circuit 101. At this time, because the output sub-circuit 102 is turned off, the detection node P can continuously accumulate photocharges, and the more the photocharges at the detection node P accumulate, the lower the potential of the detection node P will be.
输出子电路102还被配置为在扫描信号端Gate所传输的扫描电压信号的 工作电平的控制下打开,以将检测节点P处的电信号(也即在对感光子电路101进行曝光的过程中,检测节点P处积累的光电荷)传输至输出信号端Output,同时实现了对感光子电路101进行重置。需要说明的是,在将多个光敏检测电路应用于显示装置后,通过各光敏检测电路的输出信号端Output输出电信号,可以根据各电信号之间的差异,使得显示装置实现特定的功能(如指纹识别、触控检测等)。The output sub-circuit 102 is also configured to be turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate to detect the electrical signal at the node P (that is, during the process of exposing the photosensitive sub-circuit 101) , The photocharge accumulated at the detection node P) is transmitted to the output signal terminal Output, and at the same time, the photosensitive sub-circuit 101 is reset. It should be noted that after multiple photosensitive detection circuits are applied to the display device, the electrical signal is output through the output signal terminal Output of each photosensitive detection circuit, and the display device can realize a specific function according to the difference between the electrical signals ( Such as fingerprint recognition, touch detection, etc.).
检测子电路103与检测节点P、第一电压信号端Vdd及检测信号端Test耦接,被配置为响应于检测节点P的电压,向检测信号端Test实时传输检测信号。例如,在第一电压信号端Vdd传输电压信号期间,若检测节点P的电压发生变化,实时传输的检测信号也将随之改变,从而可以根据该检测信号确定出P点的电压。此处需要说明的是,P点的电压与感光子电路的受光强度之间存在相对关系,该相对关系可以提前通过标定测试得到。例如,在感光子电路101不饱和的状态下,P点的电压与感光子电路的受光强度呈一次函数关系,根据该一次函数关系可以得到一个P点的最小值,当根据检测信号确定出的P点的电压达到这个最小值,则可以认为此时感光子电路101刚好达到饱和状态。The detection sub-circuit 103 is coupled to the detection node P, the first voltage signal terminal Vdd, and the detection signal terminal Test, and is configured to transmit a detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P. For example, during the transmission of the voltage signal at the first voltage signal terminal Vdd, if the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so that the voltage at point P can be determined based on the detection signal. It should be noted here that there is a relative relationship between the voltage at point P and the received light intensity of the photosensitive sub-circuit, and this relative relationship can be obtained through a calibration test in advance. For example, in a state where the photosensitive sub-circuit 101 is not saturated, the voltage at point P and the received light intensity of the photosensitive sub-circuit have a linear function relationship. According to the linear function relationship, a minimum value of point P can be obtained. When the voltage at point P reaches this minimum value, it can be considered that the photosensitive sub-circuit 101 has just reached the saturation state at this time.
综上所述,本公开一些实施例中所提供的光敏检测电路,通过增加检测子电路103,将检测子电路103与检测节点P、第一电压信号端Vdd及检测信号端Test耦接,使得检测子电路103可以响应于检测节点P的电压,向检测信号端Test实时传输检测信号,这样可以根据检测子电路103实时传输的检测信号,确定P点的电压,从而确定出感光子电路101是否处于饱和状态。这样,可以在感光子电路101刚好饱和时或饱和前,及时打开输出子电路102以实现对感光子电路101进行重置,改善了因感光子电路101过曝而导致的检测精度降低的问题。In summary, in the photosensitive detection circuit provided in some embodiments of the present disclosure, by adding a detection sub-circuit 103, the detection sub-circuit 103 is coupled to the detection node P, the first voltage signal terminal Vdd, and the detection signal terminal Test, so that The detection sub-circuit 103 can transmit the detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P. In this way, the voltage at point P can be determined according to the detection signal transmitted by the detection sub-circuit 103 in real time, so as to determine whether the photosensitive sub-circuit 101 is In a saturated state. In this way, the output sub-circuit 102 can be opened in time when the photosensitive sub-circuit 101 is saturated or before saturation to reset the photosensitive sub-circuit 101, and the problem of the detection accuracy reduction caused by the over-exposure of the photosensitive sub-circuit 101 can be improved.
上述光敏检测电路10可以用于实现多种检测功能,例如触控检测,和指纹检测。在实现各种检测功能的过程中,示例性地,光敏检测电路的输出信号端Output输出的电信号通常还需要经由模数转换器(Analog to Digital Converter,ADC)进行模数转换,以得到相应的数字信号,然后将数字信号传送到图像处理器从而实现图案检测,例如得到手指表面的指纹图像,该指纹图像可以被用于指纹识别。The above-mentioned photosensitive detection circuit 10 can be used to implement various detection functions, such as touch detection and fingerprint detection. In the process of realizing various detection functions, for example, the electrical signal output by the output signal terminal Output of the photosensitive detection circuit usually needs to be converted from analog to digital converter (Analog to Digital Converter, ADC) to obtain the corresponding Then, the digital signal is transmitted to the image processor to realize the pattern detection, for example, the fingerprint image of the surface of the finger is obtained, and the fingerprint image can be used for fingerprint identification.
ADC的分辨率是指,对于允许范围内的模拟信号,它能输出离散数字信号值的个数。这些信号值通常用二进制数来存储,因此,分辨率常用比特作为单位,且这些离散值的个数是2的幂指数。例如,一个具有16位分辨率的 ADC可以将模拟信号编码成65536个不同的离散值(2^16=25536),所以动态范围越大,输出精度越低。The resolution of ADC refers to the number of discrete digital signal values it can output for analog signals within the allowable range. These signal values are usually stored in binary numbers. Therefore, the resolution is commonly used as a unit of bits, and the number of these discrete values is a power of two exponent. For example, an ADC with 16-bit resolution can encode an analog signal into 65536 different discrete values (2^16=25536), so the larger the dynamic range, the lower the output accuracy.
而本公开实施例所提供的光敏检测电路,由于可以在感光子电路101刚好饱和时或者饱和前,及时打开输出子电路102以对感光子电路101进行重置,因此可以控制每次曝光产生的信号量,从而有利于将ADC的动态范围设置的更小,以进一步提高检测精度。However, the photosensitive detection circuit provided by the embodiment of the present disclosure can promptly turn on the output sub-circuit 102 to reset the photosensitive sub-circuit 101 when the photosensitive sub-circuit 101 is saturated or before it is saturated, so that the output generated by each exposure can be controlled. The amount of semaphore is helpful to set the dynamic range of the ADC to be smaller to further improve the detection accuracy.
示例性地,如图4所示,感光子电路101包括光敏二极管PIN,光敏二极管PIN的第一极(比如阳极)可以与上述参考电压信号端Vbias耦接,光敏二极管的第二极(比如阴极)可以与上述检测节点P耦接。通过上述参考电压信号端Vbias向光敏二极管PIN的第一极传输偏置电压信号,可以使光敏二极管PIN处于反向偏置状态,此时,光敏二极管PIN可以将接收到的光信号转换为相应的电信号,并将该电信号传输至检测节点P。Exemplarily, as shown in FIG. 4, the photosensitive sub-circuit 101 includes a photodiode PIN. The first pole (such as the anode) of the photodiode PIN can be coupled to the aforementioned reference voltage signal terminal Vbias, and the second pole (such as the cathode) of the photodiode ) Can be coupled to the detection node P described above. By transmitting the bias voltage signal to the first pole of the photodiode PIN through the reference voltage signal terminal Vbias, the photodiode PIN can be in a reverse bias state. At this time, the photodiode PIN can convert the received light signal into a corresponding And transmit the electrical signal to the detection node P.
需要说明的是,上述感光子电路101还可以包括薄膜晶体管以及其它类型的感光元件,本公开实施例对于感光元件的类型不做限制。It should be noted that the above-mentioned photosensitive sub-circuit 101 may also include thin film transistors and other types of photosensitive elements, and the embodiment of the present disclosure does not limit the types of photosensitive elements.
示例性地,如图4所示,输出子电路102包括开关晶体管T 1,开关晶体管T 1的控制极与扫描电压信号端Gate耦接,开关晶体管T 1的第一极与检测节点P耦接,开关晶体管T 1的第二极与输出信号端Output耦接。本示例中,开关晶体管T 1在扫描信号端Gate所传输的扫描电压信号的非工作电平的控制下关闭,以对感光子电路101进行曝光。此时,由于开关晶体管T 1关闭,使得检测节点P处可以不断地积累光电荷,而检测节点P处的光电荷积累的越多,检测节点P的电位就越低。并且,开关晶体管T 1在扫描信号端Gate所传输的扫描电压信号的工作电平的控制下打开,以将检测节点P处的电信号(也即在对感光子电路101进行曝光的过程中,检测节点P处积累的光电荷)传输至输出信号端Output,对感光子电路101进行重置。 Exemplarily, as shown in FIG. 4, the output sub-circuit 102 includes a switching transistor T 1 , the control electrode of the switching transistor T 1 is coupled to the scanning voltage signal terminal Gate, and the first electrode of the switching transistor T 1 is coupled to the detection node P , a second electrode of the switching transistor T 1 and the signal output coupled to the output. In this example, the switching transistor T under control of the non-operating level of a scanning signal voltage of the scanning signal transmitted Gate terminal is closed to the photosensitive sub-circuit 101 is exposed. At this time, since the switching transistor T 1 off, so that the detection at the node P can continue to accumulate photocharge, P and photocharge accumulated at the sense node, the more the potential of the node P low detection. And the switching transistor T 1 under the control of the working level of the scanning signal terminal voltage of the scanning signal transmitted Gate opened to detect the electrical signal at node P (i.e., in the process of exposing the photosensitive sub-circuit 101, the The photoelectric charge accumulated at the detection node P) is transmitted to the output signal terminal Output, and the photosensitive sub-circuit 101 is reset.
示例性地,如图4所示,检测子电路103包括检测晶体管T 2,检测晶体管T 2的控制极与检测节点P耦接,检测晶体管T 2的第一极与第一电压信号端Vdd耦接,检测晶体管T 2的第二极与检测信号端Test耦接。本示例中,检测晶体管T 2的控制极(也即检测检点P)的电压发生变化时,检测晶体管T 2的第一极与检测晶体管T 2的第二极之间的电流也将随之发生变化,例如,当检测晶体管T 2为P型晶体管时,检测晶体管T 2的第一极与检测晶体管T 2的第二极之间的电流越大,则表示P点的电压越低;当检测晶体管T 2为N型晶体管时,检测晶体管T 2的第一极与检测晶体管T 2的第二极之间的电流越小,则表示P点的电压越低。因此在第一电压信号端Vdd传输电压信号期间,若检 测节点P的电压发生变化,实时传输的检测信号也将随之改变,从而可以根据该检测信号确定出P点的电压。 Exemplarily, as shown in FIG. 4, the detection sub-circuit 103 includes a detection transistor T 2 , the control electrode of the detection transistor T 2 is coupled to the detection node P, and the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd Then, the second electrode of the detection transistor T 2 is coupled to the detection signal terminal Test. In this example, the control electrode of the transistor T 2 is detected (i.e. detection behave P) of the voltage changes, the current detecting transistor T between a first electrode and a second detection transistor T 2 electrode 2 will also ensue changes, e.g., when detecting transistor T 2 is a P-type transistor, the first transistor T is detected and the detection electrode of the transistor T 2 is greater the current between the second electrode 2, then the lower the voltage at point P; when detecting when the transistor T 2 is an N-type transistor, a current detecting transistor T between a first electrode and a second detection transistor T 2 is smaller electrode 2, the lower the voltage of the point P. Therefore, during the transmission of the voltage signal at the first voltage signal terminal Vdd, if the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so that the voltage at point P can be determined based on the detection signal.
需要说明的是,本公开各实施例中采用的晶体管均可以为薄膜晶体管或场效应晶体管或其它特性相同的开关器件,上述各实施例中均以薄膜晶体管为例进行说明。这里采用的薄膜晶体管的源极、漏极在结构上可以是对称的,所以其源极、漏极在结构上可以是没有区别的。在本公开的上述各实施例中,薄膜晶体管的栅极为控制极,并且为了区分薄膜晶体管的除栅极之外的两极,例如可直接描述其中一极为第一极,另一极为第二极。It should be noted that the transistors used in the embodiments of the present disclosure may be thin film transistors, field effect transistors, or other switching devices with the same characteristics. In the foregoing embodiments, thin film transistors are used as examples for description. The source and drain of the thin film transistor used here can be symmetrical in structure, so the source and drain can be structurally indistinguishable. In the foregoing embodiments of the present disclosure, the gate of the thin film transistor is the control electrode, and in order to distinguish the two poles of the thin film transistor other than the gate, for example, one pole can be directly described as the first pole and the other pole is the second pole.
另外,在本公开的实施例提供的电路中,晶体管均以P型晶体管为例进行说明。需要说明的是,本公开的实施例包括但不限于此。例如,本公开的实施例提供的电路中的一个或多个晶体管也可以采用N型晶体管,只需将选定类型的晶体管的各极参照本公开的实施例中的相应晶体管的各极相应连接,并且使相应的电压端提供对应的高电压或低电压即可。In addition, in the circuits provided by the embodiments of the present disclosure, the transistors are all described by taking the P-type transistor as an example. It should be noted that the embodiments of the present disclosure include but are not limited to this. For example, one or more transistors in the circuit provided by the embodiments of the present disclosure can also be N-type transistors, and it is only necessary to connect the poles of the selected type of transistor with reference to the poles of the corresponding transistors in the embodiment of the present disclosure. , And make the corresponding voltage terminal provide the corresponding high voltage or low voltage.
本公开一些实施例还提供一种光信号检测方法,应用于如上所述的任一实施例中的光敏检测电路10,参见图1、图3和图4该光敏检测电路10至少包括感光子电路101和输出子电路102。Some embodiments of the present disclosure also provide a light signal detection method, which is applied to the photosensitive detection circuit 10 in any of the above-mentioned embodiments. See FIG. 1, FIG. 3, and FIG. 4. The photosensitive detection circuit 10 includes at least a photosensitive sub-circuit. 101 and output sub-circuit 102.
对于每个光敏检测电路,如图5所示,一次检测L包括多个检测时段,多个检测时段中的每个检测时段包括曝光子时段L 1和重置子时段L 2For each photosensitive detection circuit, as shown in FIG. 5, one detection L includes a plurality of detection periods, and each of the plurality of detection periods includes an exposure sub-period L 1 and a reset sub-period L 2 .
如图6所示,曝光子时段L 1包括: As shown in Fig. 6, the exposure sub-period L 1 includes:
S21、控制扫描电压信号的电平为非工作电平,使输出子电路102关闭,感光子电路101感应光线强度,产生电信号。S21. Control the level of the scanning voltage signal to a non-operating level, so that the output sub-circuit 102 is turned off, and the photosensitive sub-circuit 101 senses the intensity of light to generate an electrical signal.
重置子时段L 2包括: The reset sub-period L 2 includes:
S22、控制扫描电压信号的电平切换为工作电平,使输出子电路102打开,电信号传输至输出信号端,感光子电路重置。S22: Control the level of the scanning voltage signal to switch to the working level, so that the output sub-circuit 102 is turned on, the electrical signal is transmitted to the output signal terminal, and the photosensitive sub-circuit is reset.
其中,扫描电压信号的工作电平和非工作电平中的一个为高电平,另一个为低电平。例如,如图4所示,在输出子电路102包括开关晶体管T 1、并且开关晶体管T 1为P型晶体管的情况下,扫描电压信号的工作电平为低电平,扫描电压信号的非工作电平为高电平;又例如,在输出子电路102包括N型晶体管(未图示)的情况下,扫描电压信号的工作电平为高电平,扫描电压信号的非工作电平为低电平。 Among them, one of the working level and the non-working level of the scanning voltage signal is a high level, and the other is a low level. For example, as shown in FIG. 4, when the output sub-circuit 102 includes a switching transistor T 1 and the switching transistor T 1 is a P-type transistor, the operating level of the scanning voltage signal is low, and the scanning voltage signal is inactive. The level is high; for another example, in the case where the output sub-circuit 102 includes an N-type transistor (not shown), the working level of the scanning voltage signal is high, and the non-working level of the scanning voltage signal is low Level.
上述多个检测时段的曝光子时段之和为进行一次检测所需要的总曝光时长,因此将每个曝光子时段产生的信号量进行叠加得到的信号值,即为一次检测对应的信号值。需要说明的是,一次检测所需要的总曝光时长通常根据 具体的检测功能来确定,例如,在实现指纹检测功能的情况下,一次检测所需要的总曝光时长通常为100毫秒左右,也即,100毫秒左右的曝光时长所产生的信号量可以用于实现指纹的识别。The sum of the exposure sub-periods of the multiple detection periods is the total exposure time required for one detection. Therefore, the signal value obtained by superimposing the signal amount generated in each exposure sub-period is the signal value corresponding to one detection. It should be noted that the total exposure time required for one detection is usually determined according to the specific detection function. For example, when the fingerprint detection function is implemented, the total exposure time required for one detection is usually about 100 milliseconds, that is, The amount of signal generated by the exposure time of about 100 milliseconds can be used to realize fingerprint recognition.
本公开实施例所提供的光信号检测方法,通过将一次检测分为多个检测时段,每个检测时段均包括上述曝光子时段L 1和重置子时段L 2,使得每个曝光子时段L 1只是少量时间曝光,而且每次曝光后都通过重置子时段L 2对感光子电路101进行了重置,所以ADC的分辨率可以设置的更小,只需要使每个曝光子时段L 1产生的信号量不超出ADC的动态范围即可满足检测要求,例如,假设之前针对一次检测需要采用具有16位分辨率的ADC,在采用本公开实施例的光信号检测方法将一次检测分为两个检测时段的情况下,仅需要采用具有8位分辨率的ADC即可满足检测要求。而且相较于16位分辨率的ADC,由于8位分辨率的ADC的动态范围更小,还有利于提高信号的输出精度。另一方面,由于将一次检测分为多个检测时段,而每个检测时段都包括重置子时段,使得感光子电路101在各曝光子时段L 1不容易达到饱和,进而还改善了因感光子电路101过曝而导致的检测精度降低的问题。 The optical signal detection method provided by the embodiment of the present disclosure divides one detection into multiple detection periods, and each detection period includes the above-mentioned exposure sub-period L 1 and reset sub-period L 2 , so that each exposure sub-period L 1 Only a small amount of time is exposed, and the photosensitive sub-circuit 101 is reset through the reset sub-period L 2 after each exposure, so the resolution of the ADC can be set to be smaller, and it is only necessary to make each exposure sub-period L 1 The amount of signal generated does not exceed the dynamic range of the ADC to meet the detection requirements. For example, assuming that an ADC with 16-bit resolution is required for one detection before, the optical signal detection method according to the embodiment of the present disclosure divides one detection into two. In the case of three detection periods, only an ADC with 8-bit resolution is required to meet the detection requirements. And compared to the 16-bit resolution ADC, because the 8-bit resolution ADC has a smaller dynamic range, it also helps to improve the output accuracy of the signal. On the other hand, since the detection time period is divided into a plurality of detection, while each of the detection period comprises a reset period of the sub, so that the photosensitive sub-circuit 101 in the sub-exposure period L 1 is not easily saturated, and further improved by the photosensitive The detection accuracy of the sub-circuit 101 is reduced due to overexposure.
示例性地,如图4所示,上述感光子电路101可以包括光敏二极管PIN,光敏二极管PIN的第一极(比如阳极)可以与上述参考电压信号端Vbias耦接,光敏二极管的第二极(比如阴极)可以与检测节点P耦接。上述输出子电路102可以包括开关晶体管T 1,开关晶体管T 1的控制极与扫描电压信号端Gate耦接,开关晶体管T 1的第一极与检测节点P耦接,开关晶体管T 1的第二极与输出信号端Output耦接。 Exemplarily, as shown in FIG. 4, the photosensitive sub-circuit 101 may include a photodiode PIN, a first pole (such as an anode) of the photodiode PIN may be coupled to the reference voltage signal terminal Vbias, and a second pole of the photodiode ( For example, the cathode) can be coupled to the detection node P. Said output sub-circuit 102 may include a switch transistor T 1, the switching transistor T 1 to the control electrode voltage of the scanning signal Gate terminal coupled to a first electrode of the switching transistor T 1 and the sense node is coupled to P, a second switching transistor T 1 The pole is coupled to the output signal terminal Output.
在曝光子时段L 1,通过上述参考电压信号端Vbias向光敏二极管PIN的第一极传输偏置电压信号,使光敏二极管PIN处于反向偏置状态,此时,光敏二极管PIN可以将接收到的光信号转换为相应的电信号,并将该电信号传输至检测节点P。同时,开关晶体管T 1在扫描信号端Gate所传输的扫描电压信号的非工作电平的控制下关闭,以对光敏二极管PIN进行曝光,此时,由于开关晶体管T 1关闭,使得检测节点P处可以不断地积累光电荷,而检测节点P处的光电荷积累的越多,检测节点P的电位就越低。 In the exposure sub-period L 1 , the bias voltage signal is transmitted to the first pole of the photodiode PIN through the above-mentioned reference voltage signal terminal Vbias, so that the photodiode PIN is in a reverse bias state. At this time, the photodiode PIN can receive The optical signal is converted into a corresponding electrical signal, and the electrical signal is transmitted to the detection node P. At the same time, the switching transistor T 1 under the control of the non-operating level of the scanning voltage signal a scan signal transmitted Gate closed end, for exposure of the PIN photodiode, this time, since the switching transistor T 1 off, so that at the sense node P The photocharges can be accumulated continuously, and the more photocharges at the detection node P are accumulated, the lower the potential of the detection node P will be.
在重置子时段L 2,开关晶体管T 1在扫描信号端Gate所传输的扫描电压信号的工作电平的控制下打开,以将检测节点P处的电信号(也即在对感光子电路101进行曝光的过程中,检测节点P处积累的光电荷)传输至输出信号端Output,实现对光敏二极管PIN进行重置。其中,将各重置子时段传输至输出信号端Output的电信号进行叠加,得到对应于上述一次检测的检测信 号。 In the reset sub-period L 2 , the switching transistor T 1 is turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate, so as to detect the electrical signal at the node P (that is, when the photosensitive sub-circuit 101 During the exposure process, the photoelectric charge accumulated at the detection node P) is transferred to the output signal terminal Output, and the photodiode PIN is reset. Wherein, the electrical signals transmitted to the output signal terminal Output in each reset sub-period are superimposed to obtain a detection signal corresponding to the above-mentioned one detection.
本公开发明人经研究发现,检测时段的个数设置的越多,越有利于避免感光子电路出现过曝现象,同时也越有利于将ADC的动态范围设置的更小,以提高输出精度,但是检测时段的个数过多,噪声也就会越大,因此在一些示例中,将上述一次检测所包括的检测时段的个数设置为2个~20个。例如,上述一次检测所包括的检测时段的个数可以为2个、5个、6个、12个、16个、18个或20个,这样即有利避免感光子电路出现过曝现象,将ADC的动态范围设置的更小,同时也能避免噪声过大。需要说明的是,随着外界环境光的增强,上述一次检测所包括的检测时段的个数也可以进一步增多,本公开对此不做限制。The inventors of the present disclosure have discovered through research that the more the number of detection periods is set, the more beneficial it is to avoid overexposure of the photosensitive sub-circuit, and the more beneficial it is to set the dynamic range of the ADC to be smaller to improve the output accuracy. However, if the number of detection periods is too large, the noise will be greater. Therefore, in some examples, the number of detection periods included in the above-mentioned one detection is set to 2-20. For example, the number of detection periods included in the above-mentioned one detection can be 2, 5, 6, 12, 16, 18, or 20, which is beneficial to avoid overexposure of the photosensitive sub-circuit, and the ADC The dynamic range is set to be smaller, while also avoiding excessive noise. It should be noted that with the increase of external ambient light, the number of detection periods included in the above-mentioned one detection can also be further increased, which is not limited in the present disclosure.
在一些实施例中,如图3和图6所示,光敏检测电路还包括检测节点P和检测子电路103,光信号检测方法还包括:In some embodiments, as shown in FIGS. 3 and 6, the photosensitive detection circuit further includes a detection node P and a detection sub-circuit 103, and the optical signal detection method further includes:
S23、从检测信号端Test处接收检测信号,检测信号为检测子电路103响应于检测节点P的电压向检测信号端Test实时传输的信号。S23. Receive a detection signal from the detection signal terminal Test, where the detection signal is a signal that the detection sub-circuit 103 transmits to the detection signal terminal Test in real time in response to the voltage of the detection node P.
S24、根据检测信号,判断检测节点P的电压是否达到预设电压;若是,则控制扫描电压信号由非工作电平切换为工作电平。S24. According to the detection signal, determine whether the voltage of the detection node P reaches the preset voltage; if so, control the scanning voltage signal to switch from a non-operating level to a working level.
本实施例中,检测子电路103可以在响应于检测节点P的电压,向检测信号端Test实时传输检测信号,通过从检测信号端Test处接收检测子电路103实时传输的检测信号,并根据该检测信号确定P点的电压,在判断出检测节点P的电压达到预设电压的情况下,控制扫描电压信号由非工作电平切换为工作电平,可以实现在感光子电路101刚好饱和的情况下,及时打开输出子电路102对感光子电路101进行重置,从而改善了因感光子电路101过曝而导致的检测精度降低的问题。In this embodiment, the detection sub-circuit 103 can transmit the detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P, by receiving the detection signal transmitted by the detection sub-circuit 103 in real time from the detection signal terminal Test, and according to the The detection signal determines the voltage of point P. When it is determined that the voltage of the detection node P reaches the preset voltage, the scanning voltage signal is controlled to switch from the non-operating level to the operating level, which can be realized when the photosensitive sub-circuit 101 is just saturated Next, the output sub-circuit 102 is turned on in time to reset the photosensitive sub-circuit 101, thereby improving the problem of the detection accuracy reduction caused by the over-exposure of the photosensitive sub-circuit 101.
示例性地,上述检测子电路103可以包括检测晶体管,检测晶体管T 2的控制极与检测节点P耦接,检测晶体管T 2的第一极与第一电压信号端Vdd耦接,检测晶体管T 2的第二极与检测信号端Test耦接。本示例中,在曝光子时段L 1,第一电压信号端Vdd向检测晶体管的第二极传输电压信号,当检测节点P的电压发生变化时,实时传输的检测信号也将随之改变,从而可以根据该检测信号确定出P点的电压。然后,在检测节点P的电压达到预设电压时,控制扫描电压信号由非工作电平切换为工作电平,以打开输出子电路,将检测节点P处的电信号传输至输出信号端Output,也即实现感光子电路的重置。 Exemplarily, the detection sub-circuit 103 may include a detection transistor, the control electrode of the detection transistor T 2 is coupled to the detection node P, the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd, and the detection transistor T 2 The second pole of is coupled to the detection signal terminal Test. In this example, in the exposure sub-period L 1 , the first voltage signal terminal Vdd transmits a voltage signal to the second electrode of the detection transistor. When the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly, so The voltage at point P can be determined based on the detection signal. Then, when the voltage of the detection node P reaches the preset voltage, the scanning voltage signal is controlled to switch from a non-operating level to a working level to turn on the output sub-circuit and transmit the electrical signal at the detection node P to the output signal terminal Output, That is to realize the reset of the photosensitive sub-circuit.
在一些实施例中,上述预设电压为,检测节点P的电压与感光子电路的受光强度满足一次函数关系时,检测节点P的电压的最小值。其中,检测节 点P的电压的最小值通过标定测试得到。标定测试指的是,提前利用标准的计量仪器对检测节点P的电压与感光子电路的受光强度之间的对应关系进行测量,从而检测节点P的电压与感光子电路的受光强度满足一次函数关系时,检测节点P的电压的最小值,并记录该检测节点P的电压的最小值。In some embodiments, the above-mentioned preset voltage is the minimum value of the voltage of the detection node P when the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship. Among them, the minimum value of the voltage of the detection node P is obtained through the calibration test. The calibration test refers to measuring the corresponding relationship between the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit with a standard measuring instrument in advance, so that the voltage of the detection node P and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship At this time, the minimum value of the voltage of the node P is detected, and the minimum value of the voltage of the detection node P is recorded.
本公开一些实施例还提供了一种光信号检测装置20,如图7所示,该光信号检测装置20包括处理器202和存储器201,存储器201上存储有计算机程序指令,当存储器201存储的计算机程序指令被处理器202执行时,实现如上述任一实施例中的光信号检测方法中的一个或多个步骤。Some embodiments of the present disclosure also provide a light signal detection device 20. As shown in FIG. 7, the light signal detection device 20 includes a processor 202 and a memory 201. The memory 201 stores computer program instructions. When the computer program instructions are executed by the processor 202, one or more steps in the optical signal detection method as in any of the foregoing embodiments are implemented.
本公开一些实施例还提供一种光信号检测***。如图8所示,该光信号检测***30包括光敏检测电路10和光信号检测装置20。Some embodiments of the present disclosure also provide an optical signal detection system. As shown in FIG. 8, the optical signal detection system 30 includes a photosensitive detection circuit 10 and an optical signal detection device 20.
其中,光敏检测电路10包括感光子电路101和输出子电路102,感光子电路101与参考电压信号端Vbias耦接,输出子电路102与扫描电压信号端Gate、感光子电路101及输出信号端Output耦接。The photosensitive detection circuit 10 includes a photosensitive sub-circuit 101 and an output sub-circuit 102. The photosensitive sub-circuit 101 is coupled to the reference voltage signal terminal Vbias, and the output sub-circuit 102 is connected to the scanning voltage signal terminal Gate, the photosensitive sub-circuit 101 and the output signal terminal Output Coupling.
光信号检测装置至少与扫描电压信号端Gate耦接,光信号检测装置20被配置为,在一次检测中执行多个检测时段,在每个检测时段的曝光子时段,控制扫描电压信号端Gate传输的扫描电压信号的电平为非工作电平,在每个检测时段的重置子时段,控制扫描电压信号的电平为工作电平。The optical signal detection device is at least coupled to the scanning voltage signal terminal Gate, and the optical signal detection device 20 is configured to perform multiple detection periods in one detection, and control the scanning voltage signal terminal Gate to transmit during the exposure sub-period of each detection period. The level of the scanning voltage signal is a non-operating level, and in the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to be the operating level.
本公开实施例中提供的光信号检测***,可以通过光信号检测装置20,在一次检测中执行多个检测时段,由于在每个检测时段的曝光子时段,控制扫描电压信号端Gate传输的扫描电压信号的电平为非工作电平,在每个检测时段的重置子时段,控制扫描电压信号的电平为工作电平,使得每个曝光子时段只是少量时间曝光,而且每次曝光后都通过重置子时段对感光子电路101进行了重置,所以ADC的分辨率可以设置的更小,只需要使每个曝光子时段产生的信号量不超出ADC的动态范围即可满足检测要求,例如,假设之前针对一次检测需要采用具有16位分辨率的ADC,在采用本公开实施例的光信号检测方法将一次检测分为两个检测时段的情况下,仅需要采用具有8位分辨率的ADC即可满足检测要求。而且相较于16位分辨率的ADC,由于8位分辨率的ADC的动态范围更小,还有利于提高信号的输出精度。另一方面,由于利用该光信号检测装置20将一次检测分为多个检测时段,而每个检测时段都均包括重置子时段,使得感光子电路101在各曝光子时段不容易达到饱和,进而还改善了因感光子电路101过曝而导致的检测精度降低的问题。The optical signal detection system provided in the embodiments of the present disclosure can use the optical signal detection device 20 to perform multiple detection periods in one detection. Because of the exposure sub-period of each detection period, the scanning voltage signal terminal Gate transmits the scanning The level of the voltage signal is a non-operating level. In the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level, so that each exposure sub-period is only exposed for a small amount of time, and after each exposure The photosensitive sub-circuit 101 is reset through the reset sub-period, so the resolution of the ADC can be set smaller. It is only necessary to make the signal generated by each exposure sub-period not exceed the dynamic range of the ADC to meet the detection requirements For example, assuming that an ADC with 16-bit resolution is required for one detection before, when the optical signal detection method of the embodiment of the present disclosure is used to divide one detection into two detection periods, only an 8-bit resolution is required. The ADC can meet the detection requirements. And compared to the 16-bit resolution ADC, because the 8-bit resolution ADC has a smaller dynamic range, it also helps to improve the output accuracy of the signal. On the other hand, because the optical signal detection device 20 is used to divide one detection into multiple detection periods, and each detection period includes a reset sub-period, the photosensitive sub-circuit 101 is not easily saturated in each exposure sub-period. Furthermore, the problem of reduced detection accuracy caused by overexposure of the photosensitive sub-circuit 101 is also improved.
在一些实施例中,如图8所示,光敏检测电路还包括检测子电路103和检测节点P,检测子电路103、感光子电路101和输出子电路102与检测节点 P耦接,检测子电路103还与第一电压信号端Vdd及检测信号端Test耦接。检测子电路103被配置为响应于检测节点P的电压,向检测信号端Test实时传输检测信号。In some embodiments, as shown in FIG. 8, the photosensitive detection circuit further includes a detection sub-circuit 103 and a detection node P. The detection sub-circuit 103, the photosensitive sub-circuit 101 and the output sub-circuit 102 are coupled to the detection node P, and the detection sub-circuit 103 is also coupled to the first voltage signal terminal Vdd and the detection signal terminal Test. The detection sub-circuit 103 is configured to transmit a detection signal to the detection signal terminal Test in real time in response to the voltage of the detection node P.
如图8所示,光信号检测装置20还与检测信号端Test耦接。光信号检测装置20还被配置为,根据检测信号,判断检测节点的电压是否达到预设电压;若是,则控制扫描电压信号的电平由非工作电平切换为工作电平。As shown in FIG. 8, the optical signal detection device 20 is also coupled to the detection signal terminal Test. The optical signal detection device 20 is also configured to determine whether the voltage of the detection node reaches the preset voltage according to the detection signal; if so, control the level of the scanning voltage signal to switch from a non-operating level to a working level.
示例性地,如图8所示,上述感光子电路101可以包括光敏二极管PIN,光敏二极管PIN的第一极(比如阳极)可以与上述参考电压信号端Vbias耦接,光敏二极管的第二极(比如阴极)可以与检测节点P耦接。上述输出子电路102可以包括开关晶体管T 1,开关晶体管T 1的控制极与扫描电压信号端Gate耦接,开关晶体管T 1的第一极与检测节点P耦接,开关晶体管T 1的第二极与输出信号端Output耦接。上述检测子电路103可以包括检测晶体管,检测晶体管T 2的控制极与检测节点P耦接,检测晶体管T 2的第一极与第一电压信号端Vdd耦接,检测晶体管T 2的第二极与检测信号端Test耦接。 Exemplarily, as shown in FIG. 8, the photosensitive sub-circuit 101 may include a photodiode PIN, a first pole (such as an anode) of the photodiode PIN may be coupled to the reference voltage signal terminal Vbias, and a second pole of the photodiode ( For example, the cathode) can be coupled to the detection node P. Said output sub-circuit 102 may include a switch transistor T 1, the switching transistor T 1 to the control electrode voltage of the scanning signal Gate terminal coupled to a first electrode of the switching transistor T 1 and the sense node is coupled to P, a second switching transistor T 1 The pole is coupled to the output signal terminal Output. The detection sub-circuit 103 may include a detection transistor, the control electrode of the detection transistor T 2 is coupled to the detection node P, the first electrode of the detection transistor T 2 is coupled to the first voltage signal terminal Vdd, and the second electrode of the detection transistor T 2 Coupled with the test signal terminal Test.
光信号检测装置20还与参考电压信号端Vbias、第一电压信号端Vdd、以及输出信号端Output耦接。The optical signal detection device 20 is also coupled to the reference voltage signal terminal Vbias, the first voltage signal terminal Vdd, and the output signal terminal Output.
光信号检测装置20还被配置为,在曝光子时段,通过上述参考电压信号端Vbias向光敏二极管PIN的第一极传输偏置电压信号,使光敏二极管PIN处于反向偏置状态,此时,光敏二极管PIN可以将接收到的光信号转换为相应的电信号,并将该电信号传输至检测节点P。同时,控制开关晶体管T 1在扫描信号端Gate所传输的扫描电压信号的非工作电平的控制下关闭,以对光敏二极管PIN进行曝光,此时,由于开关晶体管T 1关闭,使得检测节点P处可以不断地积累光电荷,而检测节点P处的光电荷积累的越多,检测节点P的电位就越低。 The optical signal detection device 20 is also configured to transmit a bias voltage signal to the first pole of the photodiode PIN through the reference voltage signal terminal Vbias during the exposure sub-period, so that the photodiode PIN is in a reverse bias state. At this time, The photodiode PIN can convert the received optical signal into a corresponding electrical signal, and transmit the electrical signal to the detection node P. At the same time, controls the switching transistor T 1 is closed under the control of the non-operating level of the scanning voltage signal a scan end signal Gate transmitted to the PIN photodiode is exposed to, at this time, since the switching transistor T 1 off, so that the detection node P The photocharges can be continuously accumulated at the detection node P, and the more the photocharges at the detection node P are accumulated, the lower the potential of the detection node P will be.
并且,在曝光子时段,通过第一电压信号端Vdd向检测晶体管的第二极传输电压信号,当检测节点P的电压发生变化时,实时传输的检测信号也将随之改变,从而可以根据该检测信号确定出P点的电压。然后,在检测节点P的电压达到预设电压时,控制扫描电压信号由非工作电平切换为工作电平,以打开输出子电路,将检测节点P处的电信号传输至输出信号端Output,也即实现感光子电路的重置。In addition, during the exposure sub-period, a voltage signal is transmitted to the second electrode of the detection transistor through the first voltage signal terminal Vdd. When the voltage of the detection node P changes, the detection signal transmitted in real time will also change accordingly. The detection signal determines the voltage at point P. Then, when the voltage of the detection node P reaches the preset voltage, the scanning voltage signal is controlled to switch from a non-operating level to a working level to turn on the output sub-circuit and transmit the electrical signal at the detection node P to the output signal terminal Output, That is to realize the reset of the photosensitive sub-circuit.
以及,在重置子时段,控制开关晶体管T 1在扫描信号端Gate所传输的扫描电压信号的工作电平的控制下打开,以将检测节点P处的电信号(也即在对感光子电路101进行曝光的过程中,检测节点P处积累的光电荷)传输至 输出信号端Output,实现对光敏二极管PIN进行重置。其中,将各重置子时段传输至输出信号端Output的电信号进行叠加,得到对应于上述一次检测的检测信号。 And, in the reset sub-period, the control switch transistor T 1 is turned on under the control of the operating level of the scanning voltage signal transmitted by the scanning signal terminal Gate, so as to detect the electrical signal at the node P (that is, in the sensing sub-circuit During the exposure process of 101, the photocharge accumulated at the detection node P) is transferred to the output signal terminal Output, so as to reset the photodiode PIN. Wherein, the electrical signals transmitted to the output signal terminal Output in each reset sub-period are superimposed to obtain a detection signal corresponding to the above-mentioned one detection.
本公开一些实施例还提供了一种显示装置。如图9所示,该显示装置40包括显示面板41以及如上述任一实施例中的光信号检测装置20。其中,显示面板41包括衬底基板411,及设置于衬底基板411上的光敏检测电路10。光信号检测装置20与光敏检测电路10耦接。Some embodiments of the present disclosure also provide a display device. As shown in FIG. 9, the display device 40 includes a display panel 41 and an optical signal detection device 20 as in any of the above-mentioned embodiments. Among them, the display panel 41 includes a base substrate 411 and a photosensitive detection circuit 10 disposed on the base substrate 411. The optical signal detection device 20 is coupled to the photosensitive detection circuit 10.
本实施例提供的显示装置40,可以通过光敏检测电路10和光信号检测装置20,在一次检测中执行多个检测时段,由于在每个检测时段的曝光子时段,控制扫描电压信号端Gate传输的扫描电压信号的电平为非工作电平,在每个检测时段的重置子时段,控制扫描电压信号的电平为工作电平,使得每个曝光子时段只是少量时间曝光,而且每次曝光后都通过重置子时段对感光子电路101进行了重置,所以ADC的分辨率可以设置的更小,只需要使每个曝光子时段产生的信号量不超出ADC的动态范围即可满足检测要求,例如,假设之前针对一次检测需要采用具有16位分辨率的ADC,在采用本公开实施例的光信号检测方法将一次检测分为两个检测时段的情况下,仅需要采用具有8位分辨率的ADC即可满足检测要求。而且相较于16位分辨率的ADC,由于8位分辨率的ADC的动态范围更小,还有利于提高信号的输出精度。另一方面,由于利用该光信号检测装置20将一次检测分为多个检测时段,而每个检测时段都均包括重置子时段,使得感光子电路101在各曝光子时段不容易达到饱和,进而还改善了因感光子电路101过曝而导致的检测精度降低的问题,改善了显示装置40的光检测功能。The display device 40 provided in this embodiment can perform multiple detection periods in one detection through the photosensitive detection circuit 10 and the optical signal detection device 20. Since the exposure sub-period of each detection period, the scanning voltage signal terminal Gate transmits The level of the scanning voltage signal is a non-operating level. In the reset sub-period of each detection period, the level of the scanning voltage signal is controlled to the operating level, so that each exposure sub-period is only exposed for a small amount of time, and each exposure After that, the photosensitive sub-circuit 101 is reset through the reset sub-period, so the resolution of the ADC can be set smaller. It is only necessary to make the signal generated by each exposure sub-period not exceed the dynamic range of the ADC to meet the detection requirements. Requirements, for example, assuming that an ADC with 16-bit resolution is required for one detection before, when the optical signal detection method of the embodiment of the present disclosure is used to divide one detection into two detection periods, only an 8-bit resolution is required. ADC with high rate can meet the detection requirements. And compared to the 16-bit resolution ADC, because the 8-bit resolution ADC has a smaller dynamic range, it also helps to improve the output accuracy of the signal. On the other hand, because the optical signal detection device 20 is used to divide one detection into multiple detection periods, and each detection period includes a reset sub-period, the photosensitive sub-circuit 101 is not easily saturated in each exposure sub-period. Furthermore, the problem of reduced detection accuracy caused by overexposure of the photosensitive sub-circuit 101 is also improved, and the light detection function of the display device 40 is improved.
在一些实施例中,显示装置40中的光敏检测电路为如上所述的任一实施例中的光敏检测电路10。参见图9,光敏检测电路10的数量为多个,多个光敏检测10电路排列成多行光敏检测电路10。需要说明的是,图9中仅示出了部分光敏检测电路10,在实际应用中,可根据显示装置40的大小及使用需求合理的设置光敏检测电路10的数量。In some embodiments, the photosensitive detection circuit in the display device 40 is the photosensitive detection circuit 10 in any of the embodiments described above. Referring to FIG. 9, the number of photosensitive detection circuits 10 is multiple, and the plurality of photosensitive detection circuits 10 are arranged into multiple rows of photosensitive detection circuits 10. It should be noted that only part of the photosensitive detection circuit 10 is shown in FIG. 9. In practical applications, the number of photosensitive detection circuits 10 can be reasonably set according to the size of the display device 40 and usage requirements.
显示面板41还包括设置于衬底基板411上的多条检测信号线TL(如检测信号线TL 1和检测信号线TL 2),多行光敏检测电路10中的至少一行光敏检测电路10的至少一个检测子电路通过检测信号端Test与多条检测信号线中的一条检测信号线耦接。本实施例中,每条检测信号线可以输出一行光敏检测电路中的至少一个光敏检测电路的检测节点P的电压。 The display panel 41 further includes a plurality of detection signal lines TL (such as the detection signal line TL 1 and the detection signal line TL 2 ) arranged on the base substrate 411. A detection sub-circuit is coupled to one of the detection signal lines through the detection signal terminal Test. In this embodiment, each detection signal line can output the voltage of the detection node P of at least one photosensitive detection circuit in a row of photosensitive detection circuits.
该显示面板41还包括多条驱动信号线GL(如驱动信号线GL 1和驱动信 号线GL 2)和多条读取信号线RL(如读取信号线RL 1和读取信号线RL 2)。各行检测电路01中的每个薄膜晶体管T 0的控制极与一条驱动信号线GL耦接,各列检测电路01中的每个薄膜晶体管T 0的第二极与一条读取信号线RL耦接。在实现检测功能,例如指纹检测过程中,参见图9和图10,光信号检测装置20被配置为,对于每行光敏检测电路10,一次检测包括多个检测时段,每个检测时段包括曝光子时段L 1和重置子时段L 2。通过多条驱动信号线GL(如驱动信号线GL 1和驱动信号线GL 2)依次传输扫描电压信号的工作电平,使各行光敏检测电路10依次输出各检测时段的曝光子时段L 1产生的电信号,其中,各行光敏检测电路10中的每个光敏检测电路10输出的电信号可以由其所耦接的读取信号线RL传输至光信号检测装置20。然后,在各光敏检测电路10完成一次检测后,光信号检测装置20可以该一次检测中包括的多个曝光子时段L 1产生的电信号进行叠加,得到总的电信号,进而可以根据各光敏检测电路10输出的总的电信号之间的差异,实现对指纹谷脊的图案检测。 The display panel 41 also includes a plurality of driving signal lines GL (such as a driving signal line GL 1 and a driving signal line GL 2 ) and a plurality of reading signal lines RL (such as a reading signal line RL 1 and a reading signal line RL 2 ) . The control electrode of each thin film transistor T 0 in each row detection circuit 01 is coupled to a driving signal line GL, and the second electrode of each thin film transistor T 0 in each column detection circuit 01 is coupled to a read signal line RL . In the process of realizing the detection function, such as fingerprint detection, referring to Figures 9 and 10, the optical signal detection device 20 is configured such that, for each row of photosensitive detection circuits 10, one detection includes multiple detection periods, and each detection period includes exposure sub-periods. Period L 1 and reset sub-period L 2 . By a plurality of drive signal lines GL (driving signal lines GL 1 and the drive signal line GL 2) are sequentially working level of the transmission scanning voltage signal, each line of the photodetector circuit 10 sequentially outputs an exposure time sub-intervals of each detection period L 1 of generated The electrical signal, wherein the electrical signal output by each photosensitive detection circuit 10 in each row of photosensitive detection circuits 10 can be transmitted to the optical signal detection device 20 by the read signal line RL to which it is coupled. Then, after each complete a photodetector detecting circuit 10, the optical signal detecting means 20 may be a plurality of exposure of the sub-period L of the electrical signal generated comprises a detection superimposed to obtain the total electric signal according to each of the photosensitive further The difference between the total electrical signals output by the detection circuit 10 realizes the pattern detection of the fingerprint valley ridges.
需要说明的是,该显示装置中的光敏检测电路及光信号检测装置不局限于用于实现指纹检测,其也可以用于实现其它光电(信号)检测功能,例如触控检测、X射线检测等,本公开实施例对此不作限制。It should be noted that the photosensitive detection circuit and the optical signal detection device in the display device are not limited to being used to realize fingerprint detection, and can also be used to realize other photoelectric (signal) detection functions, such as touch detection, X-ray detection, etc. The embodiment of the present disclosure does not limit this.
需要说明的是,本公开实施例所提供的显示装置可以为液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件,本公开对此并不设限。It should be noted that the display device provided by the embodiment of the present disclosure can be any product with display function such as liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, TV, monitor, notebook computer, digital photo frame, navigator, etc. Or components, the present disclosure does not limit this.
以上所述,仅为本公开的具体实施方式,但本公开的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本公开揭露的技术范围内,想到变化或替换,都应涵盖在本公开的保护范围之内。因此,本公开的保护范围应以所述权利要求的保护范围为准。The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited to this. Any person skilled in the art who thinks of changes or substitutions within the technical scope disclosed in the present disclosure shall cover Within the protection scope of this disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims (15)

  1. 一种光敏检测电路,包括感光子电路、输出子电路和检测子电路;其中,A photosensitive detection circuit includes a photosensitive sub-circuit, an output sub-circuit and a detection sub-circuit; wherein,
    所述感光子电路与参考电压信号端及检测节点耦接,被配置为感应光线强度,产生电信号,并将所述电信号传输至所述检测节点;The photosensitive sub-circuit is coupled to a reference voltage signal terminal and a detection node, and is configured to sense light intensity, generate an electrical signal, and transmit the electrical signal to the detection node;
    所述输出子电路与扫描电压信号端、所述检测节点及输出信号端耦接;所述输出子电路被配置为,在所述扫描信号端所传输的扫描电压信号的非工作电平的控制下关闭,以对所述感光子电路进行曝光;及,在所述扫描电压信号的工作电平的控制下打开,以将所述电信号传输至所述输出信号端;The output sub-circuit is coupled to the scanning voltage signal terminal, the detection node and the output signal terminal; the output sub-circuit is configured to control the non-operating level of the scanning voltage signal transmitted at the scanning signal terminal Turn off to expose the photosensitive sub-circuit; and turn on under the control of the operating level of the scanning voltage signal to transmit the electrical signal to the output signal terminal;
    所述检测子电路与所述检测节点、第一电压信号端及检测信号端耦接,被配置为响应于所述检测节点的电压,向所述检测信号端实时传输检测信号。The detection sub-circuit is coupled to the detection node, the first voltage signal terminal, and the detection signal terminal, and is configured to transmit a detection signal to the detection signal terminal in real time in response to the voltage of the detection node.
  2. 根据权利要求1所述的光敏检测电路,其中,所述感光子电路包括:The photosensitive detection circuit according to claim 1, wherein the photosensitive sub-circuit comprises:
    光敏二极管,所述光敏二极管的第一极与所述参考电压信号端耦接,所述光敏二极管的第二极与所述检测节点耦接。A photodiode, the first pole of the photodiode is coupled to the reference voltage signal terminal, and the second pole of the photodiode is coupled to the detection node.
  3. 根据权利要求1或2所述的光敏检测电路,其中,所述输出子电路包括:The photosensitive detection circuit according to claim 1 or 2, wherein the output sub-circuit comprises:
    开关晶体管,所述开关晶体管的控制极与所述扫描电压信号端耦接,所述开关晶体管的第一极与所述检测节点耦接,所述开关晶体管的第二极与所述输出信号端耦接。A switching transistor, the control electrode of the switching transistor is coupled to the scanning voltage signal terminal, the first electrode of the switching transistor is coupled to the detection node, and the second electrode of the switching transistor is connected to the output signal terminal Coupling.
  4. 根据权利要求1~3中任一项所述的光敏检测电路,其中,所述检测子电路包括:The photosensitive detection circuit according to any one of claims 1 to 3, wherein the detection sub-circuit comprises:
    检测晶体管,所述检测晶体管的控制极与所述检测节点耦接,所述检测晶体管的第一极与所述第一电压信号端耦接,所述检测晶体管的第二极与所述检测信号端耦接。A detection transistor, a control electrode of the detection transistor is coupled to the detection node, a first electrode of the detection transistor is coupled to the first voltage signal terminal, and a second electrode of the detection transistor is connected to the detection signal端 Coupled.
  5. 一种光信号检测方法,应用于光敏检测电路,所述光敏检测电路包括感光子电路和输出子电路;A light signal detection method, applied to a photosensitive detection circuit, the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit;
    一次检测包括多个检测时段,所述多个检测时段中的每个所述检测时段包括:One detection includes multiple detection periods, and each of the multiple detection periods includes:
    曝光子时段,控制扫描电压信号的电平为非工作电平,使所述输出子电路关闭,所述感光子电路感应光线强度,产生电信号;During the exposure sub-period, controlling the level of the scanning voltage signal to a non-operating level, so that the output sub-circuit is turned off, and the photosensitive sub-circuit senses the intensity of light to generate an electrical signal;
    重置子时段,控制所述扫描电压信号的电平切换为工作电平,使所述输出子电路打开,所述电信号传输至输出信号端,并对所述感光子电路重置;A reset sub-period, controlling the level of the scanning voltage signal to switch to a working level, turning on the output sub-circuit, transmitting the electrical signal to the output signal terminal, and resetting the photosensitive sub-circuit;
    所述多个检测时段的曝光子时段之和为进行一次检测所需要的总曝光时长。The sum of the exposure sub-periods of the multiple detection periods is the total exposure time required for one detection.
  6. 根据权利要求5所述的光信号检测方法,其中,所述光敏检测电路还包括检测子电路;The optical signal detection method according to claim 5, wherein the photosensitive detection circuit further comprises a detection sub-circuit;
    所述光信号检测方法还包括:The optical signal detection method further includes:
    从检测信号端处接收检测信号,所述检测信号为所述检测子电路响应于检测节点的电压向所述检测信号端实时传输的信号;Receiving a detection signal from the detection signal terminal, where the detection signal is a signal that the detection sub-circuit transmits to the detection signal terminal in real time in response to the voltage of the detection node;
    根据所述检测信号,判断所述检测节点的电压是否达到预设电压;若是,则控制所述扫描电压信号由非工作电平切换为工作电平。According to the detection signal, it is determined whether the voltage of the detection node reaches a preset voltage; if so, the scanning voltage signal is controlled to switch from a non-operating level to an operating level.
  7. 根据权利要求6所述的光信号检测方法,其中,The optical signal detection method according to claim 6, wherein:
    所述预设电压为,所述检测节点的电压与所述感光子电路的受光强度满足一次函数关系时,所述检测节点的电压的最小值;The preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship;
    所述检测节点的电压的最小值通过标定测试得到。The minimum value of the voltage of the detection node is obtained through a calibration test.
  8. 根据权利要求5~7中任一项所述的光信号检测方法,其中,所述一次检测所包括的所述检测时段的个数为2个~20个。The optical signal detection method according to any one of claims 5 to 7, wherein the number of the detection periods included in the one detection is 2-20.
  9. 一种光信号检测装置,包括处理器和存储器,所述存储器上存储有计算机程序指令,当所述存储器存储的计算机程序指令被所述处理器执行时,实现如权利要求5~8中任一项所述的光信号检测方法中的一个或多个步骤。An optical signal detection device, comprising a processor and a memory, and computer program instructions are stored on the memory. When the computer program instructions stored in the memory are executed by the processor, the implementation is as follows: One or more steps in the optical signal detection method described in the item.
  10. 一种光信号检测***,包括:An optical signal detection system, including:
    光敏检测电路,所述光敏检测电路包括感光子电路和输出子电路,所述感光子电路与参考电压信号端耦接;所述输出子电路与扫描电压信号端、所述感光子电路及输出信号端耦接;和,A photosensitive detection circuit, the photosensitive detection circuit includes a photosensitive sub-circuit and an output sub-circuit, the photosensitive sub-circuit is coupled to a reference voltage signal terminal; the output sub-circuit and the scanning voltage signal terminal, the photosensitive sub-circuit and the output signal End coupling; and,
    光信号检测装置,所述光信号检测装置与所述扫描电压信号端耦接;所述光信号检测装置被配置为,在一次检测中执行多个检测时段,在每个检测时段的曝光子时段,控制所述扫描电压信号端传输的扫描电压信号的电平为非工作电平,在每个检测时段的重置子时段,控制所述扫描电压信号的电平为工作电平。The optical signal detection device is coupled to the scanning voltage signal terminal; the optical signal detection device is configured to perform multiple detection periods in one detection, and the exposure sub-period of each detection period , Controlling the level of the scanning voltage signal transmitted by the scanning voltage signal terminal to the non-operating level, and controlling the level of the scanning voltage signal to the operating level during the reset sub-period of each detection period.
  11. 根据权利要求10所述的光信号检测***,其中,所述光敏检测电路还包括检测子电路,所述检测子电路、所述感光子电路和所述输出子电路与检测节点耦接,所述检测子电路还与第一电压信号端及检测信号端耦接;The optical signal detection system according to claim 10, wherein the photosensitive detection circuit further comprises a detection sub-circuit, the detection sub-circuit, the photosensitive sub-circuit, and the output sub-circuit are coupled to a detection node, the The detection sub-circuit is also coupled to the first voltage signal terminal and the detection signal terminal;
    所述检测子电路被配置为响应于所述检测节点的电压,向所述检测信号端实时传输检测信号;The detection sub-circuit is configured to transmit a detection signal to the detection signal terminal in real time in response to the voltage of the detection node;
    所述光信号检测装置还与所述检测信号端耦接;所述光信号检测装置还被配置为,根据所述检测信号,判断所述检测节点的电压是否达到预设电压;若是,则控制所述扫描电压信号的电平由非工作电平切换为工作电平。The optical signal detection device is also coupled to the detection signal terminal; the optical signal detection device is further configured to determine whether the voltage of the detection node reaches a preset voltage according to the detection signal; if so, control The level of the scanning voltage signal is switched from a non-operating level to a working level.
  12. 根据权利要求11所述的光信号检测***,其中,The optical signal detection system according to claim 11, wherein:
    所述预设电压为,所述检测节点的电压与所述感光子电路的受光强度满足一次函数关系时,所述检测节点的电压的最小值;The preset voltage is the minimum value of the voltage of the detection node when the voltage of the detection node and the received light intensity of the photosensitive sub-circuit satisfy a linear function relationship;
    所述检测节点的电压的最小值通过标定测试得到。The minimum value of the voltage of the detection node is obtained through a calibration test.
  13. 根据权利要求10~12中任一项所述的光信号检测***,其中,所述一次检测所包括的所述检测时段的个数为2个~20个。The optical signal detection system according to any one of claims 10 to 12, wherein the number of the detection periods included in the one detection is 2 to 20.
  14. 一种显示装置,包括:A display device includes:
    显示面板,所述显示面板包括衬底基板,及设置于所述衬底基板上的光敏检测电路;A display panel, the display panel including a base substrate, and a photosensitive detection circuit arranged on the base substrate;
    如权利要求9所述的光信号检测装置,所述光信号检测装置与所述光敏检测电路耦接。9. The optical signal detection device according to claim 9, wherein the optical signal detection device is coupled to the photosensitive detection circuit.
  15. 根据权利要求14所述的显示装置,其中,所述光敏检测电路为如权利要求1~4中任一项所述的光敏检测电路;所述光敏检测电路的数量为多个,多个所述光敏检测电路排列成多行光敏检测电路;The display device according to claim 14, wherein the photosensitive detection circuit is the photosensitive detection circuit according to any one of claims 1 to 4; The photosensitive detection circuits are arranged into multiple rows of photosensitive detection circuits;
    所述显示面板还包括设置于所述衬底基板上的多条检测信号线,所述多行光敏检测电路中的至少一行光敏检测电路的至少一个检测子电路通过检测信号端与所述多条检测信号线中的一条检测信号线耦接。The display panel further includes a plurality of detection signal lines arranged on the base substrate, and at least one detection sub-circuit of at least one row of the photosensitive detection circuit in the plurality of rows of photosensitive detection circuits communicates with the plurality of detection signal terminals through the detection signal terminal. One of the detection signal lines is coupled.
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