WO2021142715A1 - 显示面板及其制作方法、以及有机发光二极管显示装置 - Google Patents
显示面板及其制作方法、以及有机发光二极管显示装置 Download PDFInfo
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- WO2021142715A1 WO2021142715A1 PCT/CN2020/072488 CN2020072488W WO2021142715A1 WO 2021142715 A1 WO2021142715 A1 WO 2021142715A1 CN 2020072488 W CN2020072488 W CN 2020072488W WO 2021142715 A1 WO2021142715 A1 WO 2021142715A1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
Definitions
- At least one embodiment of the present disclosure relates to a display panel, a manufacturing method thereof, and an organic light emitting diode display device.
- An organic light emitting diode (OLED) display may be a display including a color filter film, a display using a microcavity resonance effect, or the like.
- the display adopting the microcavity resonance effect includes a semi-transparent and semi-reflective electrode and a reflective electrode.
- the high color gamut requirement of the display can be met by adjusting the optical thickness of the dielectric layer between the semi-transparent and semi-reflective electrode and the reflective electrode.
- the embodiments of the present disclosure provide a display panel and a manufacturing method thereof, and an organic light emitting diode display device.
- At least one embodiment of the present disclosure provides a display panel including: a first light emitting unit and a second light emitting unit arranged in an array.
- the first light-emitting unit includes a first light-emitting layer
- the display panel includes a continuous film layer
- a first part of the continuous film layer is located in the second light-emitting unit to serve as a second light-emitting layer of the second light-emitting unit ,
- the second part of the continuous film layer overlaps the first light-emitting layer.
- the display panel further includes: a third light emitting unit, and the third light emitting unit includes a third light emitting layer.
- the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit are arranged in an array, and the third portion of the continuous film layer overlaps the third light-emitting layer.
- the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer are light-emitting layers emitting light of different colors.
- the first light-emitting unit includes a first electrode and a second electrode located on both sides of the first light-emitting layer and the continuous film layer; the second light-emitting unit includes two electrodes located on the continuous film layer.
- the third light-emitting unit includes a fifth electrode and a sixth electrode on both sides of the third light-emitting layer and the continuous film layer, the first electrode, the second electrode
- the three electrodes and the fifth electrode are a common electrode layer so that the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit share the common electrode layer.
- the four electrodes and the sixth electrode are separated from each other, and one of the two electrodes included in each light-emitting unit is a reflective electrode, and the other is a semi-transmissive and semi-reverse electrode.
- the common electrode layer is a cathode and a transflective electrode; the second electrode, the fourth electrode, and the sixth electrode are anodes that are separate from each other, and the anode is a reflective electrode. electrode.
- the third light-emitting layer and the first light-emitting layer are located on the same side of the continuous film layer.
- the first light-emitting layer and the third light-emitting layer are located on the side of the continuous film layer away from the common electrode layer, and the electron mobility of the material of the continuous film layer is not less than 1 *10 -7 cm 2 /Vs.
- the second portion and the third portion of the continuous film layer are in contact with the surfaces of the first light-emitting layer and the third light-emitting layer, and the continuous film layer
- the second part and the third part are configured to transmit electrons to the first light-emitting layer and the third light-emitting layer, respectively.
- the display panel includes: a connection layer located on a side of the continuous film layer away from the common electrode layer.
- the first part of the connection layer is located between the second light-emitting layer and the fourth electrode, and is in contact with the surface of the second light-emitting layer to transport holes to the second light-emitting layer;
- the second part of the connection layer Part is located between the first light-emitting layer and the common electrode layer, and is in contact with the surface of the first light-emitting layer to transport electrons to the first light-emitting layer;
- the third part of the connecting layer is located in the first light-emitting layer The three light-emitting layers are in contact with the common electrode layer and the surface of the third light-emitting layer to transport electrons to the third light-emitting layer.
- the difference between the lowest unoccupied orbital energy level of the molecules of the light-emitting host material of the first light-emitting layer and the lowest unoccupied orbital energy level of the molecules of the connection layer is less than 0.5 eV; the third The difference between the lowest unoccupied orbital energy level of the molecules of the light-emitting host material of the light-emitting layer and the lowest unoccupied orbital energy level of the molecules of the material of the connecting layer is less than 0.5 eV.
- the film layer located between the first electrode and the second electrode is formed as a first cavity adjustment structure, and the first cavity adjustment structure is configured to adjust the cavity length to emit red light;
- the film layer between the third electrode and the fourth electrode forms a second cavity adjustment structure, and the second cavity adjustment structure is configured to adjust the cavity length to emit blue light;
- the film layer between the electrodes is formed as a third cavity adjustment structure configured to adjust the cavity length to emit green light.
- the display panel includes: a first electron blocking layer located between the first light-emitting layer and the second electrode; a second electron blocking layer located between the third light-emitting layer and the sixth electrode between.
- the difference between the cavity length of the first cavity adjustment structure and the cavity length of the second cavity adjustment structure is the sum of the optical thicknesses of the first light-emitting layer and the first electron blocking layer, and the third cavity adjustment
- the difference between the cavity length of the structure and the cavity length of the second cavity adjustment structure is the sum of the optical thicknesses of the third light-emitting layer and the second electron blocking layer.
- the display panel includes: an electron injection layer located between the continuous film layer and the common electrode layer; a hole injection layer located far from the first light-emitting layer and the third light-emitting layer One side of the common electrode.
- the first cavity adjustment structure includes the hole injection layer, the first electron blocking layer, the first light-emitting layer, the connection layer, the continuous film layer, and the electron injection layer;
- the second cavity adjustment structure includes the hole injection layer, the connection layer, the continuous film layer, and the electron injection layer;
- the third cavity adjustment structure includes the hole injection layer and the second electron blocking layer Layer, the third light-emitting layer, the connection layer, the continuous film layer, and the electron injection layer.
- the display panel includes: a transport layer including at least one of an electron transport layer, a first hole transport layer, and a second hole transport layer; the electron transport layer is located on the continuous film layer And the common electrode layer; the first hole transport layer is located on the side of the first light-emitting layer, the third light-emitting layer, and the second light-emitting layer away from the common electrode, and the connection The first part of the layer is in contact with the first hole transport layer; the second hole transport layer is located on the side of the first hole transport layer away from the continuous film layer.
- the first cavity adjustment structure further includes the transmission layer, and the transmission layer is a common film layer of the first cavity adjustment structure, the second cavity adjustment structure, and the third cavity adjustment structure.
- the display panel includes: a hole blocking layer located between the electron injection layer and the continuous film layer and in contact with the continuous film layer.
- the first cavity adjustment structure, the second cavity adjustment structure, and the third cavity adjustment structure all include the hole blocking layer.
- the first light-emitting layer is a red light-emitting layer
- the second light-emitting layer is a blue light-emitting layer
- the third light-emitting layer is a green light-emitting layer.
- the proportion of the light-emitting guest material in the green light-emitting layer is less than 10%.
- At least one embodiment of the present disclosure provides an organic light emitting diode display device including the above-mentioned display panel.
- At least one embodiment of the present disclosure provides a manufacturing method for manufacturing the above-mentioned display panel, including: using a fine metal mask as a mask to form a patterned first light-emitting material layer to form the first light-emitting unit in the first light-emitting unit.
- a light-emitting layer; and an opening mask is used to form a second light-emitting material layer to form the second light-emitting layer.
- the second light-emitting material layer is the continuous film layer, and the first part of the continuous film layer is the second light-emitting layer in the second light-emitting unit.
- FIG. 1 is a schematic diagram of a partial structure of a display panel provided according to an embodiment of the present disclosure
- FIG. 2 is a schematic diagram of a partial structure of a display panel according to another embodiment of the present disclosure.
- FIG. 3 is a schematic diagram of a partial structure of a display panel provided according to another embodiment of the present disclosure.
- the high color gamut requirement of organic light-emitting diode displays can be achieved through the microcavity resonance effect, that is, by adjusting the optical thickness of the dielectric layer between the reflective electrode and the transflective electrode, the photons emitted from the light-emitting layer can be reflected
- the electrode and the transflective electrode interfere with each other, causing constructive or destructive interference.
- the light that produces constructive interference will be enhanced and transmitted from the transflective electrode to achieve the emission of specific wavelengths of light, thereby satisfying high Color gamut requirements.
- the inventor of the present application found that the organic light-emitting diode display includes red sub-pixels, green sub-pixels, and blue sub-pixels.
- a fine metal mask FMM
- the alignment accuracy is relatively high, the manufacturing cost is relatively high, and various defects are prone to occur.
- Embodiments of the present disclosure provide a display panel and a manufacturing method thereof, and an organic light emitting diode display device.
- the display panel includes a first light emitting unit and a second light emitting unit arranged in an array.
- the first light-emitting unit includes a first light-emitting layer
- the display panel includes a continuous film layer. The first part of the continuous film layer is located in the second light-emitting unit as the second light-emitting layer of the second light-emitting unit.
- One light-emitting layer overlaps.
- the continuous film layer overlaps the first light-emitting layer, and the second light-emitting layer of the second light-emitting unit is a part of the continuous film layer, which can save the production of a fine metal mask for the second light-emitting layer.
- FIG. 1 is a schematic diagram of a partial structure of a display panel provided according to an embodiment of the present disclosure.
- the display panel includes first light emitting units 100 and second light emitting units 200 arranged in an array.
- the first light-emitting unit 100 includes a first light-emitting layer 110
- the display panel includes a continuous film layer 400.
- the first portion 410 of the continuous film layer 400 is located in the second light-emitting unit 200 as the second light-emitting layer 210 of the second light-emitting unit 200.
- the second portion 420 of the film layer 400 overlaps the first light-emitting layer 110.
- the second light-emitting layer of the second light-emitting unit is a part of a continuous film layer
- the continuous film layer is a film layer that overlaps the first light-emitting layer, which can save the cost of making the second light-emitting layer.
- the fine metal mask can not only save costs, but also save the precise alignment process and avoid other defects, thereby increasing productivity.
- the above-mentioned continuous film layer 400 is a whole film layer, and the thickness and material of each part of the film layer 400 may be the same.
- the first part of the continuous film layer 400 located in the second light-emitting unit 200 is a part of the film layer for light emission, that is, the second light-emitting layer 210, and the portion of the continuous film layer 400 that overlaps the first light-emitting layer 110 does not emit light That is, the portion of the continuous film layer 400 outside the second light-emitting unit 200 is not used for light emission.
- the above continuous film layer can also be called the second light-emitting layer, but only the part of the second light-emitting layer located in the second light-emitting unit is used for light emission, and the part of the second light-emitting layer located outside the second light-emitting unit is not used for light emission .
- the embodiments of the present disclosure are described by taking the second light-emitting layer as a part of the continuous film layer. In the embodiments of the present disclosure, by fabricating the entire continuous film layer including the second light-emitting layer, a step of using a fine metal mask can be saved, cost is saved, and productivity is improved.
- first light-emitting layer 110 overlaps the second portion 420 of the continuous film layer 400.
- a fine metal mask can be used to form a plurality of first light-emitting layers separated from each other, and the continuous film layer where the second light-emitting layer is located is a whole continuous film layer made of an aperture mask, not multiple The film layers are separated from each other, so the continuous film layer including the second light-emitting layer will overlap with a plurality of first light-emitting layers separated from each other, and the continuous film layer will also overlap with the interval between adjacent first light-emitting layers .
- the number of the above-mentioned first light-emitting unit and the second light-emitting unit are both multiple, and they can be arranged in an array in a plane perpendicular to the Y direction shown in FIG. 1.
- the first light emitting unit 100 and the second light emitting unit 200 are configured to emit light of different colors.
- the first light-emitting unit 100 may be a red light-emitting unit or a green light-emitting unit
- the second light-emitting unit 200 may be a blue light-emitting unit.
- the blue light-emitting layer in the blue light-emitting unit is prepared into a continuous film layer, such as a whole layer. The film layer helps to increase the life span of the blue light-emitting unit.
- the first light emitting unit 100 may be a yellow light emitting unit
- the second light emitting unit 200 may be a blue light emitting unit.
- the first light emitting unit 100 may be a red light emitting unit, a green light emitting unit or a blue light emitting unit
- the second light emitting unit 200 may be one of the other two of a red light emitting unit, a green light emitting unit and a blue light emitting unit.
- the display panel further includes a third light emitting unit 300, and the first light emitting unit 100, the second light emitting unit 200 and the third light emitting unit 300 are arranged in an array.
- the number of the first light-emitting unit 100, the second light-emitting unit 200, and the third light-emitting unit 300 are multiple, and they may be arranged in an array in a plane perpendicular to the Y direction shown in FIG. 1.
- FIG. 1 schematically shows that the first light emitting unit 100, the third light emitting unit 300, and the second light emitting unit 200 are arranged along the X direction.
- the third light-emitting unit 300 includes a third light-emitting layer 310, the third portion 430 of the continuous film layer 400 overlaps the third light-emitting layer 310, and the third portion 430 of the continuous film layer 400 is not used for Glow.
- the embodiment of the present disclosure schematically shows that the first light-emitting layer 110 may not overlap with the third light-emitting layer 310.
- a pixel defining layer (not shown in the figure) with an opening may be provided between the adjacent first light emitting unit 100 and the third light emitting unit 300, and the first light emitting layer 110 and the third light emitting layer 310 are both located in the pixel defining layer.
- the pixel defining layer is used to separate the first light-emitting layer 110 and the third light-emitting layer 310.
- the above-mentioned continuous film layer 400 covers both the opening defined by the pixel defining layer and the pixel defining layer between adjacent openings, so that the continuous film layer 400 overlaps the first light-emitting layer 110 and the third light-emitting layer 310.
- the aforementioned "adjacent first light-emitting unit 100 and third light-emitting unit 300" means that there is no other light-emitting unit between the first light-emitting unit 100 and the third light-emitting unit 300.
- the first light-emitting layer and the third light-emitting layer may also partially overlap, that is, the edge of the first light-emitting layer may overlap the edge of the third light-emitting layer.
- the overlapping portion of the first light-emitting layer and the third light-emitting layer may be located on the pixel defining layer, but the above-mentioned overlapping portion does not affect the light emission of each light-emitting layer.
- the first light-emitting layer 110, the second light-emitting layer 210, and the third light-emitting layer 310 are light-emitting layers emitting light of different colors.
- the first light-emitting layer 110 is a red light-emitting layer
- the second light-emitting layer 210 is a blue light-emitting layer
- the third light-emitting layer 310 is a green light-emitting layer as an example.
- Forming the blue light-emitting layer as a part of a continuous film layer, for example, a part of an entire film layer, can increase the service life of the blue light-emitting layer.
- the first light-emitting layer may also be a green light-emitting layer
- the third light-emitting layer may be a red light-emitting layer; as long as one of the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer It only needs to be a red light-emitting layer, the other one is a blue light-emitting layer, and the other one is a green light-emitting layer.
- the first light-emitting unit 100 includes a first electrode 120 and a second electrode 130 located on both sides of the first light-emitting layer 110 and the continuous film layer 400, and the first electrode 120 and the second electrode 130 are configured as A voltage is applied to the first light-emitting layer 110 to make the first light-emitting layer 110 emit light.
- the second light emitting unit 200 includes a third electrode 220 and a fourth electrode 230 located on both sides of the second light emitting layer 210, and the third electrode 220 and the fourth electrode 230 are configured to apply a voltage to the second light emitting layer 210 to cause the second light emitting layer 210 to emit light.
- the layer 210 emits light.
- the third light-emitting unit 300 includes a fifth electrode 320 and a sixth electrode 330 located on both sides of the third light-emitting layer 310 and the continuous film layer 400, and the fifth electrode 320 and the sixth electrode 330 are configured to apply a voltage to the third light-emitting layer 310 So that the third light-emitting layer 310 emits light.
- the first light-emitting layer 110 emits red light
- the second light-emitting layer 210 emits blue light
- the third light-emitting layer 310 emits green light.
- the embodiment of the present disclosure uses the first electrode 120, the third electrode 220, and the fifth electrode 320 as a common electrode layer 123 to make the first light-emitting unit 100, the second light-emitting unit 200, and the third light-emitting
- the unit 300 shares the common electrode layer 123 as an example. That is, the common electrode layer 123 is a continuous film layer, and the part of the common electrode layer 123 located in the first light-emitting unit 100 is the first electrode 120, and the part of the common electrode layer 123 located in the second light-emitting unit 200 is the third electrode 220.
- the portion of the electrode layer 123 located in the third light-emitting unit 300 is the fifth electrode 320.
- the first electrode 120, the third electrode 220, and the fifth electrode 320 When a voltage is applied to the common electrode layer 123, the first electrode 120, the third electrode 220, and the fifth electrode 320 receive the same voltage, and the common electrode layer 123 is shared by each light-emitting unit.
- the embodiments of the present disclosure are not limited to this.
- the second electrode, the fourth electrode, and the sixth electrode may be a common electrode layer shared by each light-emitting unit, and the first electrode 120, the third electrode 220, and the fifth electrode 320 may be separated from each other. electrode.
- one of the two electrodes included in each light-emitting unit is a reflective electrode and the other is a transflective electrode, and the relative positional relationship of the reflective electrode, the light-emitting layer, and the transflective electrode in each light-emitting unit is the same.
- the first electrode 120 is a transflective electrode
- the second electrode 130 is a reflective electrode
- the third electrode 220 is a transflective electrode
- the fourth electrode 230 is a reflective electrode
- the fifth electrode 320 is a transflective electrode
- the sixth electrode 330 is a reflective electrode. That is, along the direction indicated by the arrow in the Y direction, the order of the film layers in each light-emitting unit is a reflective electrode, a light-emitting layer, and a transflective electrode.
- the embodiments of the present disclosure are not limited to this.
- the order of the film layers in each light-emitting unit may also be a transflective electrode, a light-emitting layer, and a reflective electrode in sequence.
- the second electrode 130, the fourth electrode 230, and the sixth electrode 330 are independent electrodes, and each electrode is applied with a different voltage to adjust the gray scale.
- the second electrode 130 overlaps the red light emitting layer 110 and the continuous film layer 400, it is only used to enable the light emitted by the red light emitting layer 110 to be emitted from the display panel.
- the sixth electrode 330 overlaps the green light emitting layer 310 and the continuous film layer 400, it is only used to enable the light emitted by the green light emitting layer 310 to be emitted from the display panel.
- the fourth electrode 230 only overlaps the blue light emitting layer 210 and is only used to make the blue light emitting layer 210 emit light.
- the film layer between the first electrode 120 and the second electrode 130 included in the first light-emitting unit 100 is formed as a first cavity structure 140, and the first cavity structure 140 is configured to adjust it.
- the cavity is long to emit red light.
- the first cavity adjustment structure 140 can constitute a microcavity effect structure.
- the light emitted by the first light-emitting layer 110 located between the two electrodes will be reflected between the first electrode 120 and the second electrode 130.
- the light directly emitted by the layer 110 interferes in the first cavity structure 140.
- light of a specific wavelength such as red light
- light of other wavelengths can be weakened, so as to emit light of a specific wavelength, such as red light.
- the refractive index of the i-th organic layer is n i
- the geometric thickness of the i-th organic layer is r i
- the wavelength of light of a specific wavelength is ⁇
- the cavity length D and the wavelength ⁇ satisfy the relationship k is a natural number.
- k can be 1, which represents the first interference period.
- the above-mentioned cavity length refers to the sum of the geometric thickness of each film layer and the optical thickness after the refractive index product. Since the refractive index of each film layer does not change, the cavity length can be adjusted by adjusting the geometric thickness of at least one film layer.
- the specific wavelength light is red light
- the value of ⁇ is 620 nm.
- the second light emitting unit 200 includes a second cavity structure 240 located between the third electrode 220 and the fourth electrode 230, and the second cavity structure 240 is configured to adjust its cavity length to emit blue light.
- the second cavity adjustment structure 240 can constitute a microcavity effect structure. By adjusting the geometric thickness of at least one film layer between the third electrode 220 and the fourth electrode 230, blue light emission can be achieved, and the blue light wavelength can be 460nm, The wavelength and the cavity length of the second cavity adjustment structure satisfy the above-mentioned relationship.
- the third light emitting unit 300 includes a third cavity adjustment structure 340 located between the fifth electrode 320 and the sixth electrode 330, and the third cavity adjustment structure 340 is configured to adjust the cavity length to emit green light.
- the third cavity adjustment structure 340 can constitute a microcavity effect structure.
- a top-emitting device with high efficiency and high color purity can be obtained.
- the green light emitting layer 310 and the red light emitting layer 110 are located on the same side of the blue light emitting layer 210.
- the embodiments of the present disclosure are not limited thereto, and the green light emitting layer and the red light emitting layer may also be located on both sides of the blue light emitting layer.
- the continuous film layer 400 where the blue light emitting layer 210 is located is located between the green light emitting layer 310 and the fifth electrode 320, and the continuous film layer 400 is located between the red light emitting layer 110 and the first electrode 120 as an example.
- the continuous film layer 400 where the blue light emitting layer 210 is located is located between the light emitting layers of other colors and the common electrode layer 123, but it is not limited thereto.
- the continuous film layer where the blue light emitting layer is located may also be located between the red light emitting layer and the second electrode, and the continuous film layer described above is located between the green light emitting layer and the sixth electrode.
- the display panel further includes an electron transport layer 510 located between the continuous film layer 400 and the common electrode layer 123.
- an electron transport layer 510 located between the continuous film layer 400 and the common electrode layer 123.
- a continuous electron transport layer 510 may be provided between the common cathode and the light-emitting layers of each color, that is, the electron transport layer 510 is a whole film layer, and Each light-emitting unit shares the electron transport layer 510.
- the material of the common electrode layer 123 may be a metal material such as magnesium (Mg), silver (Ag), aluminum (Al), or an alloy of magnesium aluminum (Mg:Al), or the like.
- the ratio of magnesium to aluminum may range from (3:7) to (1:9).
- the transmittance of the common electrode layer 123 to light with a wavelength of 530 nm may range from 50% to 60%.
- a light coupling layer (CPL) 910 is further provided on the side of the common electrode layer 123 away from each light-emitting layer to increase light output.
- the thickness of the light outcoupling layer 910 may be 50 to 80 nm.
- the material of the light outcoupling layer 901 may be an organic small molecule material.
- the refractive index of the light outcoupling layer 910 for light with a wavelength of 460 nm is greater than 1.8.
- the side of the light outcoupling layer 910 away from the common electrode layer 123 is provided with a thin film encapsulation layer 920 to protect each light emitting unit.
- the reflective electrode in each light-emitting unit may be a composite structure including a metal with high reflectivity and a transparent oxide layer with high work function, such as "silver/indium tin oxide (Ag/ITO)" or “silver/indium”. Zinc oxide (Ag/IZO)" and so on.
- the thickness of the metal included in the reflective electrode may be in the range of 80-100 nm, and the thickness of the metal oxide may be in the range of 5-10 nm.
- the average reflectance of the reflective electrode to light in the wavelength band located in the visible light region may be 85%-95%.
- the material of the electron transport layer 510 may include thiophenes, imidazoles, or azine derivatives, or the material of the electron transport layer 510 may include thiophenes, imidazoles, or azine derivatives, etc. and lithium quinolate.
- the ratio of lithium quinolate may range from 30% to 70%.
- the thickness of the electron transport layer 510 may be 20-40 nm.
- the red light emitting layer 110 and the green light emitting layer 310 are located on the side of the continuous film layer 400 away from the common electrode layer 123.
- the continuous film layer 400 is located between the electron transport layer 510 and the red light emitting layer 110 and the green light emitting layer 310, the portion of the continuous film layer 400 located in the first light emitting unit 100 and the third light emitting unit 300 is configured as red.
- the light emitting layer 110 and the green light emitting layer 310 transmit electrons, that is, the part of the continuous film layer 400 except the second light emitting unit 200 is used to transmit electrons. Therefore, the material of the continuous film layer 400, that is, the material of the blue light emitting layer 210 requires It has strong electron transmission characteristics.
- the material of the blue light-emitting layer 210 is not less than 1*10 -7 cm 2 /Vs, that is, the range of movement of electrons per volt per second is not less than 1*10 -7 cm 2 .
- the light-emitting host material of the blue light-emitting layer 210 may include anthracene-based derivatives, fluorene-based derivatives, or pyrene-based derivatives to have strong electron transport characteristics.
- the light-emitting guest material of the blue light-emitting layer 210 may include pyrene derivatives, and the doping concentration of the light-emitting guest material may range from 0.5% to 5%.
- the thickness of the blue light emitting layer 210 may be in the range of 15-25 nm.
- the second portion 420 and the third portion 430 of the continuous film layer 400 may be in contact with the surfaces of the red light emitting layer 110 and the green light emitting layer 310, and the second portion of the continuous film layer 400
- the second part 420 and the third part 430 are respectively configured as the red light emitting layer 110 and the green light emitting layer 310 to transmit electrons. That is, the blue light-emitting layer in this embodiment is formed as a part of the entire film layer (ie, the continuous film layer 400), and the blue light-emitting layer 210 located in the second light-emitting unit 200 is used to emit light and is located in the first light-emitting unit 100. And the other part of the continuous film layer in the third light-emitting unit 300 is used to transport electrons to the red light-emitting layer 110 and the green light-emitting layer 310.
- this embodiment is described by taking the electron transport layer 510 in contact with the blue light emitting layer 210 as an example, and the molecules of the light emitting host material of the blue light emitting layer 210 have the lowest unoccupied orbital level (LUMO) and electrons.
- the difference between the lowest unoccupied orbital energy levels of the molecules of the material of the transport layer 510 is less than 0.3 eV.
- the difference between the lowest unoccupied orbital energy level of the molecules of the light-emitting host material of the blue light-emitting layer 210 and the lowest unoccupied orbital energy level of any material of the electron transport layer 510 Less than 0.3eV.
- the display panel further includes a continuous electron injection layer 520 located between the electron transport layer 510 and the common electrode layer 123, that is, the electron injection layer 520 is an entire film layer, and each light-emitting unit shares the electrons. Injection layer 520.
- the material of the electron injection layer 520 may include lithium fluoride (LiF), lithium quinolate (LiQ), ytterbium (Yb), calcium (Ca), and the like.
- the thickness of the electron injection layer 520 may be 0.5-2 nm.
- the display panel further includes an entire hole injection layer 730 located between the light-emitting layer and the reflective electrode of each light-emitting unit, that is, the light-emitting layer located on each light-emitting unit is away from the common electrode layer 123.
- the hole injection layer 730 on the side may be a film layer shared by each light-emitting unit.
- the hole injection layer 730 is configured to reduce the hole injection barrier and improve hole injection efficiency.
- the material of the hole injection layer 730 may include 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (HATCN), phthalene Copper (CuPc) and so on.
- the hole injection layer 730 may be a single-layer film made of the above-mentioned materials. But not limited to this.
- the hole injection layer 730 may also be prepared by p-type doping.
- the material of the hole injection layer 730 may include N,N'-bis(1-naphthyl)-N, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinone doped with N'-diphenyl-1,1'-diphenyl-4,4'-diamine -Dimethane (NPB:F4TCNQ) or 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] doped with molybdenum trioxide (APC:MoO 3 ), etc.
- the concentration of the hole injection layer 730 for p-type doping may be 0.5%-10%.
- the thickness of the hole injection layer 730 may be 5-20 nm.
- the display panel further includes an entire first hole transport layer 710 located between the blue light emitting layer 210 and the fourth electrode 230, that is, each light emitting unit shares the first hole transport layer 710.
- the hole injection layer 730 is located on the side of the first hole transport layer 710 away from the common electrode layer 123.
- the material of the first hole transport layer 710 may include a carbazole-based material.
- the highest occupied orbital (HOMO) energy level of the molecules of the first hole transport layer 710 ranges from -5.5 eV to -5.9 eV.
- the thickness of the first hole transport layer 710 may be 0-10 nm. When the thickness of the first hole transport layer 710 is 0, it means that the film layer is not provided.
- a second hole transport layer 720 may be provided between the first hole transport layer 710 and the hole injection layer 730.
- the embodiments of the present disclosure are not limited to this, and the second hole transport layer may not be provided between the first hole transport layer and the hole injection layer, that is, the first hole transport layer may be in contact with the hole injection layer.
- the material of the second hole transport layer 720 may include a carbazole-based material having a higher hole mobility.
- the thickness of the second hole transport layer 720 may be 100 ⁇ 140 nm.
- the highest occupied orbital (HOMO) energy level of the molecules of the second hole transport layer 720 ranges from -5.2 eV to -5.6 eV.
- the difference between the highest occupied molecular orbital energy level of the molecules of the material of the first hole transport layer 710 and the highest occupied molecular orbital energy level of the molecules of the material of the second hole transport layer is less than 0.3 eV to reduce the hole transport potential Therefore, the life span of each light-emitting unit can be increased, and the value of the voltage applied to each light-emitting unit can be reduced, thereby reducing power consumption.
- the first light emitting unit 100 further includes a first electron blocking layer 150 located between the red light emitting layer 110 and the first hole transport layer 710, for blocking the first hole transport layer 710 and The electrons between the red light emitting layers 110 enter the red light emitting layer 110.
- a first electron blocking layer 150 located between the red light emitting layer 110 and the first hole transport layer 710, for blocking the first hole transport layer 710 and The electrons between the red light emitting layers 110 enter the red light emitting layer 110.
- the thickness of the first electron blocking layer 150 may be 40-60 nm.
- the difference between the highest occupied molecular orbital energy level of the material of the hole injection layer 730 and the highest occupied molecular orbital energy of the material of the first electron blocking layer 150 is less than 0.3 eV to reduce the hole injection barrier.
- the third light emitting unit 300 further includes a second electron blocking layer 350 located between the green light emitting layer 310 and the first hole transport layer 710, for blocking the first hole transport layer 710 from The electrons between the green light emitting layer 310 enter the green light emitting layer 310.
- a second electron blocking layer 350 located between the green light emitting layer 310 and the first hole transport layer 710, for blocking the first hole transport layer 710 from The electrons between the green light emitting layer 310 enter the green light emitting layer 310.
- the thickness of the second electron blocking layer 350 may be 15-30 nm.
- the difference between the highest occupied molecular orbital energy level of the material of the hole injection layer 730 and the highest occupied molecular orbital energy of the material of the second electron blocking layer 350 is less than 0.3 eV to reduce the hole injection barrier.
- the first hole transport layer 710 may be in contact with the first electron blocking layer 150 and the second electron blocking layer 350 to reduce holes from the second hole transport layer 720 to the first electron blocking layer 150 and the second electron blocking layer. 350 injection barrier.
- each film layer included in the second cavity structure 240 of the second light-emitting unit 200 is an entire film layer, while the first cavity structure 140 and the third light-emitting unit 100 of the first light-emitting unit 100
- the third cavity adjustment structure 340 of the unit 300 includes each film layer included in the second cavity adjustment structure 240, and each film layer included in the second cavity adjustment structure 240 may be a common layer of each light-emitting unit.
- the second cavity adjustment structure 240 may include a hole injection layer 730, a second hole transport layer 720, a first hole transport layer 710, a second light emitting layer 210, an electron transport layer 510, and an electron injection layer 520.
- the optical thickness of each film layer included in the second cavity adjustment structure 240 should be determined first.
- the thickness of the first hole transport layer 710 and the second hole transport layer 720 can be adjusted to adjust the cavity length of the second cavity structure 240.
- the sum of the optical thicknesses of the electron injection layer 520, the electron transport layer 510, the blue light emitting layer 210, the first hole transport layer 710, the second hole transport layer 720, and the hole injection layer 730 in the second light emitting unit 200 Is the cavity length of the second cavity adjustment structure 240.
- the first cavity adjustment structure 140 also includes the red light emitting layer 110 and the first electron blocking layer 150.
- the cavity length of the first cavity adjustment structure 140 and the second The cavity length difference of the cavity adjustment structure 240 is the sum of the optical thicknesses of the red light emitting layer 110 and the first electron blocking layer 150. Therefore, after the cavity length of the second cavity adjustment structure 240 is determined, the geometric thickness of at least one of the red light emitting layer 110 and the first electron blocking layer 150 is adjusted to adjust the cavity length satisfied by the first cavity adjustment structure 140 .
- the third cavity adjustment structure 340 includes the green light emitting layer 310 and the second electron blocking layer 350 in addition to the film layers in the second cavity adjustment structure 240.
- the cavity length of the third cavity adjustment structure 340 is The difference between the cavity length and the cavity length of the second cavity adjustment structure 240 is the sum of the optical thicknesses of the green light emitting layer 310 and the second electron blocking layer 350. Therefore, after the cavity length of the second cavity adjustment structure 240 is determined, the geometric thickness of at least one of the green light emitting layer 310 and the second electron blocking layer 350 is adjusted to adjust the cavity length satisfied by the third cavity adjustment structure 340 .
- the red light emitting layer 110, the first electron blocking layer 150, the green light emitting layer 310, and the second electron blocking layer 350 may be formed first, and then the continuous film layer 400 may be formed.
- the formed continuous film layer 400 is conformal formed on the red light emitting layer 110 and the green light emitting layer 310 with different thicknesses.
- the thickness of the continuous film layer 400 in each light-emitting unit is the same, because the red light-emitting layer 110 and the red light-emitting layer 110 included between the continuous film layer 400 and the first hole transport layer 710 in the first light-emitting unit
- the thickness of the first electron blocking layer 150 is different from the thickness of the green light emitting layer 310 and the second electron blocking layer 350 included between the continuous film layer 400 and the first hole transport layer 710 in the third light emitting unit, and There is no other film layer between the blue light emitting layer 210 and the first hole transport layer 710 in the second light emitting unit 200, so that the distances between the continuous film layer 400 included in different light emitting units and the respective reflective electrodes are different.
- the other entire layers of the continuous film layer 400 on the side away from the fourth electrode 230 are also formed conformally.
- the red light emitting layer 110 may include a red light emitting host material and a red light emitting guest material.
- the red light emitting host material may include aromatic polyamine materials or aromatic compounds and other materials, such as NPB ("N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1 '-Diphenyl-4,4'-diamine), aluminum quinolinol, etc.
- the red light emitting host material may include a single host, or a double host formed by blending a hole-type host and an electron-type host.
- the red light emitting guest material may include various iridium (Ir) or platinum (Pt) complexes, and the doping ratio of the guest material may be in the range of 2% to 5%.
- the thickness of the red light emitting layer 110 may be 25-40 nm.
- the green light emitting layer 310 may include a green light emitting host material and a green light emitting guest material.
- the green light emitting host material may include a single host, or may include a double host formed by a blend of a hole-type host and an electron-type host.
- the green light-emitting guest material may include various iridium (Ir) or platinum (Pt)-based complexes, and the doping ratio of the guest material may be in the range of 2% to 5%.
- the ratio of the light-emitting guest material in the green light-emitting layer 310 is less than 10%.
- Table 1 shows a schematic diagram of the relationship between the ratio of the light-emitting guest material in the green light-emitting layer and the voltage, luminous efficiency, and lifetime required by the third light-emitting unit.
- Table 1 shows a schematic diagram of the relationship between the ratio of the light-emitting guest material in the green light-emitting layer and the voltage, luminous efficiency, and lifetime required by the third light-emitting unit.
- Table 1 shows a schematic diagram of the relationship between the ratio of the light-emitting guest material in the green light-emitting layer and the voltage, luminous efficiency, and lifetime required by the third light-emitting unit.
- the proportion of the light-emitting guest material doped in the light-emitting host material the more the carriers in the light-emitting layer tend to be balanced, and the longer the lifetime of the green light-emitting unit.
- the proportion of its doped guest material should be less than 10%.
- FIG. 2 is a schematic diagram of a partial structure of a display panel provided according to another embodiment of the present disclosure. As shown in FIG. 2, the difference between this embodiment and the embodiment shown in FIG. 1 is that the display panel further includes a connection layer 600 located on the side of the continuous film layer 400 away from the common electrode layer 123, and the first part of the connection layer 600 Located between the blue light emitting layer 210 and the fourth electrode 230, the blue light emitting layer 210 blocks electrons.
- the first part of the connection layer 600 may be in contact with the surface of the blue light emitting layer 210.
- connection layer 600 is located between the continuous film layer 400 and the first hole transport layer 710, and both sides of the connection layer 600 are connected to the continuous film layer 400 and the first hole transport layer 710, respectively.
- Surface contact Since the connection layer 600 is located between the blue light emitting layer 210 and the first hole transport layer 710, for the blue light emitting layer 210, the connection layer 600 can have both hole transport and electron blocking effects.
- the material of the connection layer 600 may include anthracene derivatives or fluorene derivatives.
- the light-emitting host material of the blue light-emitting layer 210 may be the same as or different from the material of the connection layer 600.
- the difference between the highest occupied molecular orbital level (HOMO) of the material of the connection layer 600 and the highest occupied molecular orbital level of the material of the first hole transport layer 710 is not more than 0.3 eV .
- Table 2 shows the relationship between the difference in the highest occupied molecular orbital level (HOMO) of molecules between the connection layer and the first hole transport layer and the voltage, luminous efficiency, and lifetime required by the second light-emitting unit.
- the energy level difference between the highest occupied molecular orbital between the connecting layer and the first hole transport layer is small (for example, not greater than 0.3 eV)
- the potential barrier at the interface between the two can be reduced to reduce the accumulation of carriers, thereby Improve the life of the blue light emitting unit. Therefore, in order to ensure the lifetime of the blue light emitting unit, the difference between the highest occupied molecular orbital energy levels of the connection layer and the first hole transport layer is set to be not more than 0.3 eV.
- the second part of the connection layer 600 is located between the red light emitting layer 110 and the common electrode layer 123 to transmit electrons to the red light emitting layer 110.
- the second part of the connection layer 600 may be in contact with the surface of the red light emitting layer 110.
- connection layer 600 Since the connection layer 600 is located between the electron transport layer 510 and the red light emitting layer 110, the connection layer 600 needs to play a better role in transporting electrons to the red light emitting layer 110.
- connection layer 600 can not only transport electrons to the red light emitting layer 110, but also block holes.
- connection layer 600 may be located between the red light emitting layer 110 and the continuous film layer 400, and both sides of the connection layer 600 are in contact with the red light emitting layer 110 and the continuous film layer 400, respectively.
- connection layer 600 is located between the green light emitting layer 310 and the common electrode layer 123 to transmit electrons to the green light emitting layer 310.
- connection layer 600 may be in contact with the surface of the green light emitting layer 310.
- connection layer 600 Since the connection layer 600 is located between the electron transport layer 510 and the green light emitting layer 310, the connection layer 600 needs to play a better role in transporting electrons to the green light emitting layer 310.
- connection layer 600 may not only transport electrons to the green light emitting layer 310, but also block holes.
- connection layer 600 may be located between the green light emitting layer 310 and the continuous film layer 400, and both sides of the connection layer 600 are in contact with the green light emitting layer 310 and the continuous film layer 400, respectively.
- connection layer provided by the embodiments of the present disclosure is to improve the characteristics of the blue light emitting unit, but the characteristics of the red light emitting unit and the green light emitting unit must also be taken into consideration. Therefore, while the material of the connection layer functions to block electrons and transport holes for the blue light-emitting layer, it also needs to function for the red light-emitting layer and the green light-emitting layer to transport electrons.
- the thickness of the connection layer 600 is not more than 4 nm.
- Table 3 shows a schematic diagram of the relationship between the thickness of the connecting layer and the voltage, luminous efficiency, and lifetime required by the red light emitting unit and the green light emitting unit.
- Table 3 taking the thickness of the connecting layer as a reference of 4nm, when the current density remains unchanged, as the thickness of the connecting layer decreases, the lifetimes of both the red light emitting unit and the green light emitting unit increase, and It has little effect on the required voltage and efficiency of each light-emitting unit.
- the thickness of the connection layer is not greater than 4 nm, the carrier transmission between the connection layer and the light-emitting layer is more efficient, which can reduce the impact on the life of the red light-emitting unit and the green light-emitting unit.
- the difference between the lowest unoccupied orbital energy level of the molecules of the luminescent host material of the red light emitting layer 110 and the lowest unoccupied orbital energy level of the molecules of the connection layer 600 is less than 0.5 eV, so that The electrons are more efficiently transferred to the red light emitting layer to improve the efficiency of the red light emitting unit and reduce its power consumption.
- the energy level of the material of the connection layer needs to be matched with the energy level of the material of the red light emitting layer to ensure that the efficiency of the red light emitting unit is not affected.
- the difference between the lowest unoccupied orbital energy level of the molecules of the luminescent host material of the red light emitting layer and the lowest unoccupied orbital energy level of the molecules of the connecting layer is less than 0.5 eV, It can be ensured that the efficiency of the red light emitting unit is not affected.
- the difference between the lowest unoccupied orbital energy level of the molecules of the luminescent host material of the red light emitting layer and the lowest unoccupied orbital energy level of the molecules of the material of the connection layer may be no more than 0.3 eV.
- the lowest unoccupied orbital energy level of the molecules of the light emitting host material of the red light emitting layer 110 is the lowest unoccupied orbital energy level of the molecules of the single host material .
- the lowest unoccupied orbital energy level of the molecules of the light emitting host material of the red light emitting layer 110 is the lowest unoccupied molecule of the electronic host material in the dual host Orbital energy level.
- the difference between the lowest unoccupied orbital energy level of the molecules of the luminescent host material of the green light emitting layer 310 and the lowest unoccupied orbital energy level of the molecules of the connection layer 600 is less than 0.5 eV, so that The electrons are more efficiently transferred to the green light emitting layer to improve the efficiency of the green light emitting unit and reduce its power consumption.
- the energy level of the material of the connection layer needs to be matched with the energy level of the material of the green light emitting layer to ensure that the efficiency of the green light emitting unit is not affected.
- the difference between the lowest unoccupied orbital energy level of the molecules of the luminescent host material of the green light-emitting layer and the lowest unoccupied orbital energy level of the molecules of the connecting layer is less than 0.5 eV, It can be ensured that the efficiency of the green light emitting unit is not affected.
- the difference between the lowest unoccupied orbital energy level of the molecules of the light-emitting host material of the green light emitting layer and the lowest unoccupied orbital energy level of the molecules of the material of the connection layer may not be more than 0.3 eV.
- the lowest unoccupied orbital energy level of the molecules of the light emitting host material of the green light emitting layer 310 is the lowest unoccupied orbital energy level of the molecules of the single host material.
- the lowest unoccupied orbital energy level of the molecules of the light emitting host material of the green light emitting layer 310 is the lowest unoccupied molecule of the electronic host material in the double host. Orbital energy level.
- each film layer included in the second cavity structure 240 of the second light-emitting unit 200 is an entire film layer, and the first cavity structure 140 and the third light-emitting unit 100 of the first light-emitting unit 100
- the third cavity adjustment structure 340 of the unit 300 includes each film layer included in the second cavity adjustment structure 240, and each film layer included in the second cavity adjustment structure 240 may be a common layer of each light-emitting unit.
- the second cavity adjustment structure 240 may include a hole injection layer 730, a second hole transport layer 720, a first hole transport layer 710, a connection layer 600, a second light emitting layer 210, an electron transport layer 510, and an electron injection layer 520.
- the optical thickness of each film layer included in the second cavity adjustment structure 240 should be determined first.
- the thickness of the first hole transport layer 710 and the second hole transport layer 720 can be adjusted to adjust the cavity length of the second cavity structure 240.
- the sum of the optical thicknesses of the electron injection layer 520, the electron transport layer 510, the blue light emitting layer 210, the first hole transport layer 710, the second hole transport layer 720, and the hole injection layer 730 in the second light emitting unit 200 Is the cavity length of the second cavity adjustment structure 240.
- the first cavity adjustment structure 140 also includes the red light emitting layer 110 and the first electron blocking layer 150.
- the cavity length of the first cavity adjustment structure 140 and the second The cavity length difference of the cavity adjustment structure 240 is the sum of the optical thicknesses of the red light emitting layer 110 and the first electron blocking layer 150. Therefore, after the cavity length of the second cavity adjustment structure 240 is determined, the geometric thickness of at least one of the red light emitting layer 110 and the first electron blocking layer 150 is adjusted to adjust the cavity length satisfied by the first cavity adjustment structure 140 .
- the third cavity adjustment structure 340 includes the green light emitting layer 310 and the second electron blocking layer 350 in addition to the film layers in the second cavity adjustment structure 240.
- the cavity length of the third cavity adjustment structure 340 is The difference between the cavity length and the cavity length of the second cavity adjustment structure 240 is the sum of the optical thicknesses of the green light emitting layer 310 and the second electron blocking layer 350. Therefore, after the cavity length of the second cavity adjustment structure 240 is determined, the geometric thickness of at least one of the green light emitting layer 310 and the second electron blocking layer 350 is adjusted to adjust the cavity length satisfied by the third cavity adjustment structure 340 .
- FIG. 3 is a schematic diagram of a partial structure of a display panel provided according to another embodiment of the present disclosure.
- the difference between this embodiment and the embodiment shown in FIG. 1 is that the display panel further includes a hole blocking layer 800, which is located between the electron transport layer 510 and the continuous film layer 400 and interacts with electrons.
- the transmission layer 510 is in contact.
- This embodiment takes the connection layer 600 in the embodiment shown in FIG. 2 as an example, and the connection layer 600 has the same material, position, and function as the connection layer in the embodiment shown in FIG. Go into details.
- the embodiment of the present disclosure is not limited to this, and this implementation may not include the connection layer in the embodiment shown in FIG. 2.
- the difference between the highest occupied molecular orbital energy level of the molecules of the hole blocking layer 800 and the highest occupied molecular orbital energy level of the molecules of the light-emitting host material of the blue light emitting layer 210 is not less than 0.3 eV.
- the difference between the lowest unoccupied orbital energy level of the molecule of the hole blocking layer 800 and the lowest unoccupied orbital energy level of the material of the blue light emitting layer 210 is less than 0.3 eV to improve electron injection.
- the efficiency of the red light emitting layer 110 and the green light emitting layer 310 the efficiency of the red light emitting unit and the green light emitting unit are further improved, and the power consumption of the two color light emitting units is reduced.
- Table 4 shows the comparison of the voltage, efficiency, and lifetime of each light-emitting unit when a hole blocking layer is provided in the display panel and when the hole blocking layer is not provided.
- Table 4 based on the voltage, efficiency, and lifetime required by each light-emitting unit when the display panel is not provided with a hole-blocking layer, the display panel is provided with a hole-blocking layer when the current density remains unchanged. Later, the efficiency of each light-emitting unit can be improved, and the power consumption of each light-emitting unit can be reduced, but the service life of the red light-emitting unit and the green light-emitting unit will be affected. Therefore, in actual products, it is possible to determine whether to provide a hole blocking layer according to the power consumption, efficiency, and lifetime requirements of each light-emitting unit.
- the continuous film layer where the blue light-emitting layer in the display panel provided by the embodiment of the present disclosure is located can be a film layer that overlaps at least one of the green light-emitting layer and the red light-emitting layer, thereby saving a step of using a fine metal mask.
- the process saves material costs and can increase the production capacity of products.
- the equipment used for mass production of display panels and the mass production process of the display panels are compatible with the equipment and processes for making general display panels (using fine metal masks to make blue light emitting layers), thereby Can save process cost.
- each film layer included in the second cavity structure 240 of the second light-emitting unit 200 is an entire film layer, while the first cavity structure 140 and the third light-emitting unit 100 of the first light-emitting unit 100
- the third cavity adjustment structure 340 of the unit 300 includes each film layer included in the second cavity adjustment structure 240, and each film layer included in the second cavity adjustment structure 240 may be a common layer of each light-emitting unit.
- the second cavity adjustment structure 240 may include a hole injection layer 730, a second hole transport layer 720, a first hole transport layer 710, a connection layer 600, a second light-emitting layer 210, a hole blocking layer 800, and an electron transport layer.
- the optical thickness of each film layer included in the second cavity adjustment structure 240 should be determined first.
- the thickness of the first hole transport layer 710 and the second hole transport layer 720 can be adjusted to adjust the cavity length of the second cavity structure 240.
- the sum of the optical thicknesses of the electron injection layer 520, the electron transport layer 510, the blue light emitting layer 210, the first hole transport layer 710, the second hole transport layer 720, and the hole injection layer 730 in the second light emitting unit 200 Is the cavity length of the second cavity adjustment structure 240.
- the first cavity adjustment structure 140 also includes the red light emitting layer 110 and the first electron blocking layer 150.
- the cavity length of the first cavity adjustment structure 140 and the second The cavity length difference of the cavity adjustment structure 240 is the sum of the optical thicknesses of the red light emitting layer 110 and the first electron blocking layer 150. Therefore, after the cavity length of the second cavity adjustment structure 240 is determined, the geometric thickness of at least one of the red light emitting layer 110 and the first electron blocking layer 150 is adjusted to adjust the cavity length satisfied by the first cavity adjustment structure 140 .
- the third cavity adjustment structure 340 includes the green light emitting layer 310 and the second electron blocking layer 350 in addition to the film layers in the second cavity adjustment structure 240.
- the cavity length of the third cavity adjustment structure 340 is The difference between the cavity length and the cavity length of the second cavity adjustment structure 240 is the sum of the optical thicknesses of the green light emitting layer 310 and the second electron blocking layer 350. Therefore, after the cavity length of the second cavity adjustment structure 240 is determined, the geometric thickness of at least one of the green light emitting layer 310 and the second electron blocking layer 350 is adjusted to adjust the cavity length satisfied by the third cavity adjustment structure 340 .
- the connection layer 600 may not be included, and the second cavity-adjusting structure 240 may include a hole injection layer 730, a second hole transport layer 720, and a first hole.
- the second cavity adjustment structure may also only include at least one of the above-mentioned second hole transport layer 720, the first hole transport layer 710, and the electron transport layer 510.
- Another embodiment of the present disclosure provides an organic light emitting diode display device, including the display panel provided in any of the above embodiments.
- the second light-emitting layer of the second light-emitting unit is a part of the continuous film layer, which can save the fine metal mask for making the second light-emitting layer, which can save cost and To accurately align the process and avoid other defects, improve productivity.
- the thickness of the film layer (such as the thickness of the connection layer) in each light-emitting unit in the organic light-emitting diode display device, the lifespan of the red light-emitting unit and the green light-emitting unit can be increased, and the work can be reduced. Consumption.
- the difference between the highest occupied molecular orbital energy levels of the molecules between some film layers in the organic light emitting diode display device is adjusted, for example, the highest occupied molecules of the molecules in the connection layer and the first hole transport layer are adjusted. Adjusting the difference in orbital energy levels can improve the efficiency and lifetime of the blue light emitting unit; for example, adjusting the difference in the highest occupied molecular orbital energy levels of the molecules in the hole injection layer, the first electron blocking layer and the second electron blocking layer , Can improve the life of the red light emitting unit and the green light emitting unit.
- the difference between the lowest unoccupied orbital energy levels of the molecules between some film layers in the organic light emitting diode display device is adjusted, for example, the lowest unoccupied molecules of the blue light emitting layer and the hole blocking layer are adjusted.
- the efficiency of the light-emitting unit and the green light-emitting unit, and the reduction of power consumption; for example, the light-emitting host material of the red light-emitting layer and the light-emitting host material of the green light-emitting layer and the material of the connecting layer are less than the lowest unoccupied orbital energy level.
- the poor adjustment can make the concentration of electrons transferred to the red light emitting layer and the green light emitting layer higher, so as to improve the efficiency of the red light emitting unit and the green light emitting unit, and reduce the power consumption of both.
- the life span of the green light emitting unit can be increased.
- Another embodiment of the present disclosure provides a manufacturing method of a display panel.
- the manufacturing method provided by the embodiment of the present disclosure is a manufacturing method of the display panel provided in any of the embodiments shown in FIGS. 1-3, and the manufacturing method provided in this embodiment
- the shape, position, and material of each film layer produced by the manufacturing method are the same as the shape, position, and material of each film layer in the display panel provided by the embodiment shown in FIGS.
- the manufacturing method of the display panel includes the following steps.
- S1 Use a fine metal mask as a mask to form a patterned first light-emitting material layer to form the first light-emitting layer in the first light-emitting unit.
- the display panel shown in FIG. 1 before forming the first luminescent material layer, it further includes sequentially forming a second electrode 130, a hole injection layer 730, a second hole transport layer 720, and a first hole transport layer. Layer 710 and the first electron blocking layer 150.
- the fourth electrode 230 and the sixth electrode 330 may be formed at the same time as the second electrode 130 is formed.
- the material and thickness of the second electrode 130, the fourth electrode 230, and the sixth electrode 330 may all be the same, that is, the second electrode 130, the fourth electrode 230, and the sixth electrode 330 may be formed by a one-step patterning process.
- the second electron blocking layer 350 may also be formed at the same time as the first electron blocking layer 150 is formed.
- a half-tone mask process may be used to form the first electron blocking layer 150 and the second electron blocking layer 350 having different thicknesses.
- the first luminescent material layer may be vapor-deposited on the side of the first electron blocking layer 150 away from the first hole transport layer 710 using a fine metal mask as a mask. Since the fine metal mask includes a plurality of small-sized openings, the vapor-deposited first light-emitting material layer is formed into a plurality of first light-emitting layers 110 separated from each other.
- S2 forming a second luminescent material layer using an open mask to form a second luminescent layer, wherein the second luminescent material layer is a continuous film layer, and the first part of the continuous film layer is the second luminescent layer in the second light-emitting unit.
- the second light-emitting material layer may further include forming a third light-emitting layer 310 on the side of the second electron blocking layer 350 away from the first hole transport layer 710.
- a fine metal mask can be used as a mask to vaporize and form the third light-emitting layer 310 of the third light-emitting unit 300.
- forming the second luminescent material layer may include forming the second luminescent material layer using an open mask to form a continuous film layer 400.
- the opening mask here refers to only one opening, and the film layer formed by vapor deposition using the opening mask is a whole continuous film layer, rather than a plurality of separated film layers.
- the blue light-emitting layer is directly formed by using an opening mask instead of a fine metal mask, thereby saving a step of using a fine metal mask, which can save cost, and can save precise alignment process and avoid other Bad, increase production capacity.
- an electron transport layer 510, an electron injection layer 520, and a common electrode layer 123 may be sequentially formed on the side of the blue light emitting layer 210 away from the first hole transport layer 710.
- the light outcoupling layer 910 and the thin film encapsulation layer 920 may be sequentially formed on the side of the blue light emitting layer 210 away from the first hole transport layer 710.
- the connecting layer 600 may also be formed on the side of the red light emitting layer 110 and the green light emitting layer 310 away from the first hole transport layer 710.
- the blue light emitting layer 210 is formed on the side of the connecting layer 600 away from the first hole transport layer 710.
- a hole blocking layer 800 may be formed on the side of the blue light emitting layer 210 away from the first hole transport layer 710.
- the above-mentioned electron transport layer 510 may be formed on the side of the hole blocking layer 800 away from the blue light emitting layer 210.
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Abstract
Description
Claims (19)
- 一种显示面板,包括:阵列排布的第一发光单元和第二发光单元,所述第一发光单元包括第一发光层,其中,所述显示面板包括连续膜层,所述连续膜层的第一部分位于所述第二发光单元内以作为所述第二发光单元的第二发光层,所述连续膜层的第二部分与所述第一发光层交叠。
- 根据权利要求1所述的显示面板,还包括:第三发光单元,所述第三发光单元包括第三发光层,其中,所述第一发光单元、所述第二发光单元与所述第三发光单元阵列排布,且所述连续膜层的第三部分与所述第三发光层交叠。
- 根据权利要求2所述的显示面板,其中,所述第一发光层、所述第二发光层以及所述第三发光层分别为发射不同颜色光的发光层。
- 根据权利要求2或3所述的显示面板,其中,所述第三发光层和所述第一发光层位于所述连续膜层的同侧。
- 根据权利要求2-4任一项所述的显示面板,其中,所述第一发光单元包括位于所述第一发光层和所述连续膜层两侧的第一电极和第二电极;所述第二发光单元包括位于所述连续膜层两侧的第三电极和第四电极;所述第三发光单元包括位于所述第三发光层和所述连续膜层两侧的第五电极和第六电极,所述第一电极、所述第三电极以及所述第五电极为一公共电极层以使所述第一发光单元、所述第二发光单元以及所述第三发光单元共用该公共电极层,所述第二电极、所述第四电极和所述第六电极彼此分隔设置,且各所述发光单元包括的两个所述电极之一为反射电极,另一个为半透半反电极。
- 根据权利要求5所述的显示面板,其中,所述公共电极层为阴极,且为半透半反电极;所述第二电极、所述第四电极和所述第六电极为彼此分立的阳极,且所述阳极为反射电极。
- 根据权利要求6所述的显示面板,其中,所述第一发光层和所述第三发光层位于所述连续膜层远离所述公共电极层的一侧,且所述连续膜层的材料的电子迁移率不低于1*10 -7cm 2/Vs。
- 根据权利要求7所述的显示面板,其中,所述连续膜层的所述第二部 分和所述第三部分分别与所述第一发光层和所述第三发光层的表面接触,且所述连续膜层的所述第二部分和所述第三部分分别被配置为所述第一发光层和所述第三发光层传输电子。
- 根据权利要求7所述的显示面板,包括:连接层,位于所述连续膜层远离所述公共电极层的一侧,其中,所述连接层的第一部分位于所述第二发光层与第四电极之间,且与所述第二发光层的表面接触以为所述第二发光层传输空穴;所述连接层的第二部分位于所述第一发光层与所述公共电极层之间,且与所述第一发光层的表面接触以为所述第一发光层传输电子;所述连接层的第三部分位于所述第三发光层与所述公共电极层之间,且与所述第三发光层的表面接触以为所述第三发光层传输电子。
- 根据权利要求9所述的显示面板,其中,所述第一发光层的发光主体材料的分子最低未被占据轨道能级与所述连接层的材料的分子最低未被占据轨道能级之差小于0.5eV;所述第三发光层的发光主体材料的分子最低未被占据轨道能级与所述连接层的材料的分子最低未被占据轨道能级之差小于0.5eV。
- 根据权利要求9或10所述的显示面板,其中,位于所述第一电极和所述第二电极之间的膜层形成为第一调腔结构,所述第一调腔结构被配置为调节腔长以发射红光;位于所述第三电极与所述第四电极之间的膜层形成第二调腔结构,所述第二调腔结构被配置为调节腔长以发射蓝光;位于所述第五电极与所述第六电极之间的膜层形成为第三调腔结构,所述第三调腔结构被配置为调节腔长以发射绿光。
- 根据权利要求11所述的显示面板,包括:第一电子阻挡层,位于所述第一发光层与所述第二电极之间;第二电子阻挡层,位于所述第三发光层与所述第六电极之间,其中,所述第一调腔结构的腔长与所述第二调腔结构的腔长之差为所述第一发光层与所述第一电子阻挡层的光学厚度之和,所述第三调腔结构的腔长与所述第二调腔结构的腔长之差为所述第三发光层与所述第二电子阻挡层的光学厚度之和。
- 根据权利要求12所述的显示面板,包括:电子注入层,位于所述连续膜层与所述公共电极层之间;空穴注入层,位于所述第一发光层和所述第三发光层远离所述公共电极的一侧,其中,所述第一调腔结构包括所述空穴注入层、所述第一电子阻挡层、所述第一发光层、所述连接层、所述连续膜层以及所述电子注入层;所述第二调腔结构包括所述空穴注入层、所述连接层、所述连续膜层以及所述电子注入层;所述第三调腔结构包括所述空穴注入层、所述第二电子阻挡层、所述第三发光层、所述连接层、所述连续膜层以及所述电子注入层。
- 根据权利要求13所述的显示面板,包括:传输层,所述传输层包括电子传输层、第一空穴传输层以及第二空穴传输层的至少之一;所述电子传输层位于所述连续膜层与所述公共电极层之间;所述第一空穴传输层位于所述第一发光层、所述第三发光层和所述第二发光层远离所述公共电极的一侧,所述连接层的所述第一部分与所述第一空穴传输层接触;所述第二空穴传输层位于所述第一空穴传输层远离所述连续膜层的一侧;其中,所述第一调腔结构还包括所述传输层,且所述传输层为所述第一调腔结构、所述第二调腔结构和所述第三调腔结构的共用膜层。
- 根据权利要求13或14所述的显示面板,包括:空穴阻挡层,位于所述电子注入层与所述连续膜层之间,且与所述连续膜层接触,其中,所述第一调腔结构、所述第二调腔结构以及所述第三调腔结构均包括所述空穴阻挡层。
- 根据权利要求2-15任一项所述的显示面板,其中,所述第一发光层为红光发光层,所述第二发光层为蓝光发光层,所述第三发光层为绿光发光层。
- 根据权利要求16所述的显示面板,其中,所述绿光发光层中的发光客体材料的比例低于10%。
- 一种有机发光二极管显示装置,包括权利要求1-17任一项所述的显示面板。
- 一种根据权利要求1-17任一项所述的显示面板的制作方法,包括:采用精细金属掩模板为掩模形成图案化的第一发光材料层以形成所述第一发光单元中的所述第一发光层;以及采用开口掩模板形成第二发光材料层以形成所述第二发光层,其中,所述第二发光材料层为所述连续膜层,且所述连续膜层的所述第一部分为所述第二发光单元中的所述第二发光层。
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