WO2021128463A1 - Display panel and preparation method therefor - Google Patents
Display panel and preparation method therefor Download PDFInfo
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- WO2021128463A1 WO2021128463A1 PCT/CN2020/070575 CN2020070575W WO2021128463A1 WO 2021128463 A1 WO2021128463 A1 WO 2021128463A1 CN 2020070575 W CN2020070575 W CN 2020070575W WO 2021128463 A1 WO2021128463 A1 WO 2021128463A1
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- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 175
- 230000005284 excitation Effects 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000010410 layer Substances 0.000 claims description 275
- 238000004519 manufacturing process Methods 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 23
- 239000002096 quantum dot Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 239000002356 single layer Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
Definitions
- This application relates to the field of display technology, in particular to a display panel and a manufacturing method thereof.
- Miniature light-emitting diodes a new technology regarded by many manufacturers as the next generation of display, have the advantages of much lower power consumption than liquid crystal displays, better brightness than organic light-emitting displays, and self-luminescence. Its main feature is to reduce the existing LED (Light Emitting Diode, light emitting diode) from millimeter to micron level size (generally less than 50 microns in size), and then carry out the new technology of array arrangement.
- LED Light Emitting Diode, light emitting diode
- the embodiment of the present application provides a display panel and a manufacturing method thereof, so as to solve the technical problem of low efficiency in the transfer process of the existing miniature light emitting diode.
- An embodiment of the present application provides a display panel, which includes:
- a plurality of first chips are arranged on the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;
- a plurality of second chips, the plurality of second chips are disposed on the array substrate;
- a plurality of color conversion layers, the plurality of color conversion layers are arranged on the excitation chip in a one-to-one correspondence; the color light excited by the plurality of color conversion layers, the color light emitted by the plurality of first chips, and The color lights emitted by the plurality of second chips are different from each other;
- the second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light;
- the material of the color conversion layer includes one of quantum dots, phosphors and perovskite.
- the color conversion layer has a single-layer structure.
- the color conversion layer includes a first light-transmitting sub-layer, a second light-transmitting sub-layer, and a color conversion sub-layer that are sequentially disposed on the excitation chip;
- the light-transmitting sub-layer has a first refractive index
- the second light-transmitting sub-layer has a second refractive index
- the color conversion sub-layer has a third refractive index
- the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- the first refractive index is less than or equal to the third refractive index.
- the thickness of the color conversion sublayer is between 190 nanometers and 240 nanometers.
- An embodiment of the present application provides another display panel, which includes:
- a plurality of first chips are arranged on the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;
- a plurality of second chips, the plurality of second chips are disposed on the array substrate;
- a plurality of color conversion layers, the plurality of color conversion layers are arranged on the excitation chip in a one-to-one correspondence; the color light excited by the plurality of color conversion layers, the color light emitted by the plurality of first chips, and The color lights emitted by the plurality of second chips are different from each other.
- the second chip emits red light or green light
- the color conversion layer is excited to emit green light or red light
- the material of the color conversion layer includes one of quantum dots, phosphors, and perovskite.
- the color conversion layer has a single-layer structure.
- the color conversion layer includes a first light-transmitting sub-layer, a second light-transmitting sub-layer, and a color conversion sub-layer that are sequentially disposed on the excitation chip;
- the light-transmitting sub-layer has a first refractive index
- the second light-transmitting sub-layer has a second refractive index
- the color conversion sub-layer has a third refractive index
- the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- the first refractive index is less than or equal to the third refractive index.
- the thickness of the color conversion sublayer is between 190 nanometers and 240 nanometers.
- This application also relates to a method for manufacturing a display panel, which includes the following steps:
- a color conversion layer is formed on the excitation chip, and the color light excited by the color conversion layer, the color light emitted by the plurality of first chips, and the color light emitted by the plurality of second chips are different from each other.
- the forming a color conversion layer on the excitation chip includes the following steps:
- the depth of the opening is greater than the thickness of the color conversion layer.
- the second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light.
- the material of the color conversion layer includes one of quantum dots, phosphors, and perovskites.
- the color conversion layer has a single-layer structure.
- the forming a color conversion layer on the excitation chip includes the following steps:
- the first light-transmitting sub-layer has a first refractive index
- the second light-transmitting sub-layer has a second refractive index
- the color converter The layer has a third refractive index
- the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- the first refractive index is less than or equal to the third refractive index.
- the thickness of the color conversion sub-layer is between 190 nanometers and 240 nanometers.
- the display panel and the manufacturing method thereof of the present application provide a first chip and a second chip on an array substrate, and a color conversion layer on part of the first chip (excitation chip), so that the structure of the excitation chip combined with the color conversion layer emits the first chip and the second chip.
- excitation chip a color conversion layer on part of the first chip
- This method does not require Three chip transfers are performed to improve the preparation effect.
- FIG. 1 is a schematic diagram of the structure of a display panel according to the first embodiment of the application
- FIG. 2 is a schematic structural diagram of a display panel according to a second embodiment of the application.
- FIG. 3 is a flowchart of a manufacturing method of the display panel according to the first embodiment of the application
- step S2 is a schematic structural diagram of step S2 of the manufacturing method of the display panel according to the first embodiment of the application;
- step S3 is a schematic structural diagram of step S3 of the manufacturing method of the display panel according to the first embodiment of the application;
- step S3 is a flowchart of step S3 of the manufacturing method of the display panel according to the second embodiment of the application.
- 5B is a schematic structural diagram of step S32 of the manufacturing method of the display panel according to the first embodiment of the application;
- 5C is a schematic structural diagram of step S33 of the manufacturing method of the display panel according to the first embodiment of the application;
- 5D is a schematic structural diagram of step S34 of the manufacturing method of the display panel according to the first embodiment of the application;
- FIG. 6 is a flowchart of step S3' of the manufacturing method of the display panel according to the second embodiment of the application.
- FIG. 6A is a schematic structural diagram of step S33' of the manufacturing method of the display panel according to the second embodiment of the application.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, “multiple” means two or more than two, unless otherwise specifically defined.
- connection should be understood in a broad sense, unless otherwise clearly specified and limited.
- it can be a fixed connection or a detachable connection.
- Connected or integrally connected it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship.
- connection should be understood according to specific circumstances.
- the "above” or “below” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
- “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than that of the second feature.
- the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
- FIG. 1 is a schematic structural diagram of a display panel according to a first embodiment of the application.
- An embodiment of the present application provides a display panel 100 that includes an array substrate 11, a plurality of first chips 12, a plurality of second chips 13 and a plurality of color conversion layers 14.
- the array substrate 11 is used to drive the first chip 12 and the second chip 13 to emit light.
- a plurality of first chips 12 are provided on the array substrate 11.
- the plurality of first chips 12 emit blue light.
- Part of the first chip 12 is an excitation chip 12a.
- the excitation chip 12a is a chip for illuminating the color conversion layer 14 with light, and exciting the color conversion layer 14 to emit light.
- a plurality of second chips 13 are provided on the array substrate 11.
- the number of the first chips 12 is more than the number of the second chips 13 because part of the first chips 12 are used as excitation chips 12a to ensure the balance of the full-color display.
- the number of the first chips 12 is twice that of the second chips 13.
- a plurality of color conversion layers 14 are arranged on the excitation chip 12a in a one-to-one correspondence.
- the color light emitted by the plurality of color conversion layers 14, the color light emitted by the plurality of first chips 12 and the color light emitted by the plurality of second chips 13 are different from each other.
- the first chip 12 and the second chip 13 are arranged on the array substrate 11, and the color conversion layer 14 is arranged on part of the first chip 12 (the excitation chip 12a), so that the excitation chip 12a is combined
- the structure of the color conversion layer 14 emits light of the third color.
- This method only needs to transfer the first chip 12 and the second chip 13 twice, and then form the color conversion layer 14 on the excitation chip 12a, so that the excitation chip 12a emits light and the color conversion layer 14 emits another color light. Three chip transfers are performed to improve the preparation effect.
- the second chip 13 emits red light or green light.
- the color conversion layer 14 is excited to emit green light or red light. That is, when the second chip 13 emits red light, the color conversion layer 14 is excited to emit green light. When the second chip 13 emits green light, the color conversion layer 14 is excited to emit red light.
- the red chip manufacturing process is different from that of the green and blue chips and needs to be grown on different substrates, the process of transferring the chips to the array substrate is very difficult.
- the red chip of the micro LED has problems such as poor luminous efficiency and fragility. Therefore, in the display panel 100 of the first embodiment, the second chip 13 emits green light, and the color conversion layer 14 is excited to emit red light. That is, the second chip 13 is a green chip.
- the first chip 12 combined with the red color conversion layer 14 is used to replace the red chip.
- the manufacturing efficiency of the display panel 100 is improved, and on the other hand, the luminous efficiency of red light is improved.
- the material of the color conversion layer 14 includes one of quantum dots, phosphors, and perovskite.
- the color conversion layer 14 is a quantum dot layer.
- the color conversion layer 14 has a single-layer structure.
- FIG. 2 is a schematic structural diagram of a display panel according to a second embodiment of the application.
- the embodiment of the present application provides two types of display panels 200, which include an array substrate 21, a plurality of first chips 22, a plurality of second chips 23, and a plurality of color conversion layers 24.
- Part of the first chip 22 is an excitation chip 22a.
- the color conversion layer 24 includes a first light-transmitting sub-layer 241 and a second light-transmitting sub-layer 241 and a second light-transmitting sub-layer sequentially disposed on the excitation chip 22a.
- the first light-transmitting sub-layer 241 has a first refractive index
- the second light-transmitting sub-layer 242 has a second refractive index
- the color conversion sub-layer 243 has a third refractive index.
- the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- the second refractive index is set to be greater than the third refractive index.
- the incident angle of the light is greater than the critical angle of total internal reflection, total internal reflection of the light occurs at the interface between the second light-transmitting sub-layer 242 and the color conversion sub-layer 243.
- the light energy enters the color conversion sub-layer 243 to a certain depth, and the light waves propagating in the color conversion sub-layer 243 are evanescent waves.
- the evanescent wave will excite the color conversion sub-layer 243, which causes the color conversion sub-layer 243 to radiate fluorescence.
- the color conversion sub-layer 243 is formed of a red material and emits red light.
- the incident angle of the light is less than or equal to the critical angle of total internal reflection, the light directly enters the color conversion sub-layer 243.
- the material of the color conversion sub-layer 243 is one of quantum dots, phosphors, or perovskite.
- the material of the color conversion sub-layer 243 is quantum dots.
- the depth range of the evanescent wave in the quantum dot film (color conversion sub-layer 243) is about 200 nanometers. Therefore, the thickness of the quantum dot film layer (color conversion sub-layer 243) can be set to be between 190 nanometers and 240 nanometers.
- the thickness of the color conversion sub-layer 243 is 200 nanometers.
- the second refractive index is set to be greater than the third refractive index in the second embodiment, which reduces the required thickness of the quantum dot film layer.
- the remaining light after light conversion with the color conversion sub-layer 243 will return to the second light-transmitting sub-layer 242 according to the law of reflection, and since the second refractive index is set to be greater than the first light-transmitting sub-layer 242 A refractive index, so the reflected light undergoes total internal reflection at the interface between the second light-transmitting sub-layer 242 and the first light-transmitting sub-layer 241, and the light is directed to the color conversion sub-layer 243 again, and the color conversion sub-layer 243 is twice Secondary excitation improves the utilization rate of light.
- the first refractive index is less than or equal to the third refractive index.
- FIG. 3 is a flowchart of the method for manufacturing the display panel according to the first embodiment of the application
- FIG. 4A is a schematic diagram of the structure of step S2 of the method for manufacturing the display panel according to the first embodiment of the application
- 4B is a schematic structural diagram of step S3 of the method for manufacturing a display panel according to the first embodiment of the application.
- Step S1 Provide an array substrate 11;
- Step S2 sequentially transfer a plurality of first chips 12 and a plurality of second chips 13 onto the array substrate 11, the plurality of first chips 12 emit blue light, and some of the first chips 12 are excitation chips 12a;
- Step S3 forming a color conversion layer 14 on the excitation chip 12a, the color light excited by the color conversion layer 14, the color light emitted by the plurality of first chips 12, and the color light emitted by the plurality of second chips 13 The color of light varies.
- the manufacturing method of the display panel of the first embodiment only needs to transfer the first chip 12 and the second chip 13 twice, and then form the color conversion layer 14 on the excitation chip 12a, so that the excitation chip 12a emits light and stimulates the color conversion layer 14 to emit light. Another kind of color light, this method does not require three chip transfers, which improves the preparation effect.
- step S1 an array substrate 11 is provided.
- the array substrate 11 includes a circuit structure electrically connected to the first chip 12 and the second chip 13 for driving the first chip 12 and the second chip 13 to emit light. Then go to step S2.
- step S2 please refer to FIG. 4A.
- the plurality of first chips 12 and the plurality of second chips 13 are sequentially transferred onto the array substrate 11.
- the plurality of first chips 12 emit blue light, and some of the first chips 12 are excitation chips 12a.
- the excitation chip 12a is a chip for illuminating the color conversion layer 14 with light, and exciting the color conversion layer 14 to emit light.
- the number of the first chips 12 is more than the number of the second chips 13, because part of the first chips 12 are used as excitation chips 12a to ensure the balance of the full-color display.
- the number of the first chips 12 is twice that of the second chips 13. Then go to step S3.
- step S3 please refer to FIG. 4B.
- a color conversion layer 14 is formed on the excitation chip 12a. Wherein, the color light emitted by the color conversion layer 14, the color light emitted by the plurality of first chips 12, and the color light emitted by the plurality of second chips 13 are different, so as to realize the full color of the display panel. display.
- Step S3 includes the following steps:
- a photoresist layer 15 is formed on the array substrate 11.
- the photoresist layer 15 covers the plurality of first chips 12, the plurality of second chips 13 and the array substrate 11.
- the photoresist layer 15 can be a positive photoresist or a negative photoresist.
- the photoresist layer 15 is a negative photoresist.
- the photoresist layer 15 may be formed on the array substrate 11 by coating. Then go to step S32.
- step S32 please refer to FIG. 5B.
- the photoresist layer 15 is exposed and developed.
- An opening 151 corresponding to the excitation chip is formed in the photoresist layer 15 to expose the excitation chip 12a.
- the photoresist layer 15 is exposed by a mask, the light-shielding part of the mask is set corresponding to the excitation chip 12a to block the photoresist layer 15 on the excitation chip 12a, and the light-transmitting part of the mask corresponds to the photoresist layer in other positions 15; Then the photoresist layer 15 is developed to form an opening 151 that exposes the excitation chip 12a.
- step S32 an undercut structure is provided on the peripheral side of the opening 151 to facilitate the formation of the non-continuous color conversion layer 14 in the subsequent steps.
- the depth of the opening 151 is greater than the thickness of the color conversion layer 14 in the subsequent steps, which facilitates the formation of the non-continuous color conversion layer 14. Then go to step S33.
- step S33 please refer to FIG. 5C.
- a color conversion layer 14 is formed in the opening 151, and the color conversion layer 14 is cured.
- the color conversion layer 14 has a single-layer structure.
- the color conversion material layer is formed by coating the entire surface of the array substrate 11.
- the color conversion material layer is located at the position of the opening 151, due to the depth of the opening 151 and the undercut structure, the color conversion material layer and other color conversion material layers in the opening 151 are disconnected, thereby forming a one-time formation
- the color conversion layer 14 improves the production efficiency.
- the color conversion layer 14 is cured by exposure or heating.
- the second chip 13 emits red light or green light, and the color conversion layer 14 is excited to emit green light or red light. That is, when the second chip 13 emits red light, the color conversion layer 14 is excited to emit green light. When the second chip 13 emits green light, the color conversion layer 14 is excited to emit red light.
- the red chip manufacturing process is different from that of the green and blue chips and needs to be grown on different substrates, the process of transferring the chips to the array substrate is very difficult.
- the red chip of the micro LED has problems such as poor luminous efficiency and fragility. Therefore, in the manufacturing method of the first embodiment, the second chip 13 emits green light, and the color conversion layer 14 is excited to emit red light. That is, the second chip 13 is a green chip.
- the first chip 12 combined with the red color conversion layer 14 is used to replace the red chip, which improves the manufacturing efficiency of the display panel on the one hand, and improves the luminous efficiency of red light on the other hand.
- the material of the color conversion layer 14 includes one of quantum dots, phosphors, and perovskite.
- the color conversion layer 14 is a quantum dot layer. Then go to step S34.
- step S34 please refer to FIG. 5D.
- the photoresist layer 15 is peeled off. Specifically, the photoresist layer 15 is stripped off using a photoresist stripping solution to obtain a display panel.
- step S3' includes the following steps:
- Step S31' forming a photoresist layer 25 on the array substrate 21, the photoresist layer 25 covering the plurality of first chips 22, the plurality of second chips 23 and the array substrate 21;
- Step S32' Expose and develop the photoresist layer 25, and form an opening 251 in the photoresist layer 25 corresponding to the excitation chip 22a to expose the excitation chip 22a;
- Step S33' sequentially form a first light-transmitting sub-layer 241, a second light-transmitting sub-layer 242, and a color conversion sub-layer 243 in the opening 251 to form the color conversion layer 24, and cure the color conversion Layer 24;
- Step S34' peel off the photoresist layer 25.
- steps S31', S32', and S34' correspond to steps S31, S32, and S34 of the preparation method of the first embodiment one-to-one.
- steps S31, S32, and S34 of the preparation method of the first embodiment please refer to the steps S31, S32, and S34 of the preparation method of the first embodiment. The content will not be repeated here.
- step S33' please refer to FIG. 6A.
- a first light-transmitting sub-layer 241, a second light-transmitting sub-layer 242, and a color conversion sub-layer 243 are sequentially formed in the opening 251 to form the color conversion layer 24, and the color conversion layer 24 is cured.
- the first light-transmitting sub-layer 241 and the second light-transmitting sub-layer 242 may also be formed by coating.
- the first light-transmitting sub-layer 241 has a first refractive index
- the second light-transmitting sub-layer 242 has a second refractive index
- the color conversion sub-layer 243 has a third refractive index.
- the second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- the second refractive index is set to be greater than the third refractive index.
- the incident angle of the light is greater than the critical angle of total internal reflection, total internal reflection of the light occurs at the interface between the second light-transmitting sub-layer 242 and the color conversion sub-layer 243.
- the light energy enters the color conversion sub-layer 243 to a certain depth, and the light waves propagating in the color conversion sub-layer 243 are evanescent waves.
- the evanescent wave will excite the color conversion sub-layer 243, which causes the color conversion sub-layer 243 to radiate fluorescence.
- the color conversion sub-layer 243 is formed of a red material and emits red light.
- the incident angle of the light is less than or equal to the critical angle of total internal reflection, the light directly enters the color conversion sub-layer 243.
- the material of the color conversion sub-layer 243 is one of quantum dots, phosphors, or perovskite.
- the material of the color conversion sub-layer 243 is quantum dots.
- the depth range of the evanescent wave in the quantum dot film (color conversion sub-layer 243) is about 200 nanometers. Therefore, the thickness of the quantum dot film layer (color conversion sub-layer 243) can be set to be between 190 nanometers and 240 nanometers.
- the thickness of the color conversion sub-layer 243 is 200 nanometers.
- the second refractive index is set to be greater than the third refractive index in the second embodiment, which reduces the required thickness of the quantum dot film layer.
- the remaining light after light conversion with the color conversion sub-layer 243 will return to the second light-transmitting sub-layer 242 according to the law of reflection, and since the second refractive index is set to be greater than the first light-transmitting sub-layer 242 A refractive index, so the reflected light undergoes total internal reflection at the interface between the second light-transmitting sub-layer 242 and the first light-transmitting sub-layer 241, and the light is directed to the color conversion sub-layer 243 again, and the color conversion sub-layer 243 is twice Secondary excitation improves the utilization rate of light.
- the first refractive index is less than or equal to the third refractive index.
- step S3' steps of the preparation method of the second embodiment except step S3' are similar or the same as the corresponding steps of the preparation method of the first embodiment.
- steps S3' are similar or the same as the corresponding steps of the preparation method of the first embodiment.
- the display panel and the manufacturing method thereof of the present application provide a first chip and a second chip on an array substrate, and a color conversion layer on part of the first chip (excitation chip), so that the structure of the excitation chip combined with the color conversion layer emits the first chip and the second chip.
- excitation chip a color conversion layer on part of the first chip
- This method does not require Three chip transfers are performed to improve the preparation effect.
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Abstract
The present application provides a display panel and a preparation method therefor. The display panel comprises an array substrate, first chips, second chips, and color conversion layers, wherein the first chips are provided on the array substrate and emit blue light, and a part of the first chips are excitation chips; the second chips are provided on the array substrate; the color conversion layers are provided on the excitation chips a one-to-one correspondence manner; and the excited color light of the color conversion layers, the color light emitted by the first chips, and the color light emitted by the second chips are different from each other.
Description
本申请涉及一种显示技术领域,特别涉及一种显示面板及其制备方法。This application relates to the field of display technology, in particular to a display panel and a manufacturing method thereof.
微型发光二极管这一被众多厂商视为下一代显示的新技术,具有耗电量远小于液晶显示器、亮度优于有机发光显示器、且自发光等优点。其主要的特点是将现有的LED(Light Emitting Diode,发光二极管)从毫米微缩至微米等级大小(一般为尺寸小于50微米),再进行阵列排布的新技术。Miniature light-emitting diodes, a new technology regarded by many manufacturers as the next generation of display, have the advantages of much lower power consumption than liquid crystal displays, better brightness than organic light-emitting displays, and self-luminescence. Its main feature is to reduce the existing LED (Light Emitting Diode, light emitting diode) from millimeter to micron level size (generally less than 50 microns in size), and then carry out the new technology of array arrangement.
因其为自发光技术,所以作为全彩化显示时需将不同颜色的芯片按照像素的设计分别转移至背板上,但是连续进行三种芯片的转移较为耗费时间,且在转移上容易受到很大的困难。Because it is a self-luminous technology, it is necessary to transfer the chips of different colors to the backplane according to the pixel design when it is used as a full-color display. Great difficulty.
本申请实施例提供一种显示面板及其制备方法,以解决现有的微型发光二极管在转移制程中效率较低的技术问题。The embodiment of the present application provides a display panel and a manufacturing method thereof, so as to solve the technical problem of low efficiency in the transfer process of the existing miniature light emitting diode.
本申请实施例提供一种显示面板,其包括:An embodiment of the present application provides a display panel, which includes:
阵列基板;Array substrate
多个第一芯片,所述多个第一芯片设置在所述阵列基板上,所述多个第一芯片发蓝光,部分所述第一芯片为激发芯片;A plurality of first chips, the plurality of first chips are arranged on the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;
多个第二芯片,所述多个第二芯片设置在所述阵列基板上;以及A plurality of second chips, the plurality of second chips are disposed on the array substrate; and
多个色彩转换层,所述多个色彩转换层一一对应地设置在所述激发芯片上;所述多个色彩转换层被激发的颜色光、所述多个第一芯片发出的颜色光和所述多个第二芯片发出的颜色光各不相同;A plurality of color conversion layers, the plurality of color conversion layers are arranged on the excitation chip in a one-to-one correspondence; the color light excited by the plurality of color conversion layers, the color light emitted by the plurality of first chips, and The color lights emitted by the plurality of second chips are different from each other;
所述第二芯片发红光或绿光,所述色彩转换层被激发出绿光或红光;The second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light;
所述色彩转换层的材料包括量子点、荧光粉和钙钛矿中的一种。The material of the color conversion layer includes one of quantum dots, phosphors and perovskite.
在本申请实施例的所述显示面板中,所述色彩转换层为单层结构。In the display panel of the embodiment of the present application, the color conversion layer has a single-layer structure.
在本申请实施例的所述显示面板中,所述色彩转换层包括依次设置在所述激发芯片上的第一透光子层、第二透光子层和色彩转换子层;所述第一透光子层具有第一折射率,所述第二透光子层具有第二折射率,所述色彩转换子层具有第三折射率;In the display panel of the embodiment of the present application, the color conversion layer includes a first light-transmitting sub-layer, a second light-transmitting sub-layer, and a color conversion sub-layer that are sequentially disposed on the excitation chip; The light-transmitting sub-layer has a first refractive index, the second light-transmitting sub-layer has a second refractive index, and the color conversion sub-layer has a third refractive index;
所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
在本申请实施例的所述显示面板中,所述第一折射率小于或等于所述第三折射率。In the display panel of the embodiment of the present application, the first refractive index is less than or equal to the third refractive index.
在本申请实施例的所述显示面板中,所述色彩转换子层的厚度介于190纳米至240纳米之间。In the display panel of the embodiment of the present application, the thickness of the color conversion sublayer is between 190 nanometers and 240 nanometers.
本申请实施例提供还一种显示面板,其包括:An embodiment of the present application provides another display panel, which includes:
阵列基板;Array substrate
多个第一芯片,所述多个第一芯片设置在所述阵列基板上,所述多个第一芯片发蓝光,部分所述第一芯片为激发芯片;A plurality of first chips, the plurality of first chips are arranged on the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;
多个第二芯片,所述多个第二芯片设置在所述阵列基板上;以及A plurality of second chips, the plurality of second chips are disposed on the array substrate; and
多个色彩转换层,所述多个色彩转换层一一对应地设置在所述激发芯片上;所述多个色彩转换层被激发的颜色光、所述多个第一芯片发出的颜色光和所述多个第二芯片发出的颜色光各不相同。A plurality of color conversion layers, the plurality of color conversion layers are arranged on the excitation chip in a one-to-one correspondence; the color light excited by the plurality of color conversion layers, the color light emitted by the plurality of first chips, and The color lights emitted by the plurality of second chips are different from each other.
在本申请实施例的所述显示面板中,所述第二芯片发红光或绿光,所述色彩转换层被激发出绿光或红光。In the display panel of the embodiment of the present application, the second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light.
在本申请实施例的所述显示面板中,所述色彩转换层的材料包括量子点、荧光粉和钙钛矿中的一种。In the display panel of the embodiment of the present application, the material of the color conversion layer includes one of quantum dots, phosphors, and perovskite.
在本申请实施例的所述显示面板中,所述色彩转换层为单层结构。In the display panel of the embodiment of the present application, the color conversion layer has a single-layer structure.
在本申请实施例的所述显示面板中,所述色彩转换层包括依次设置在所述激发芯片上的第一透光子层、第二透光子层和色彩转换子层;所述第一透光子层具有第一折射率,所述第二透光子层具有第二折射率,所述色彩转换子层具有第三折射率;In the display panel of the embodiment of the present application, the color conversion layer includes a first light-transmitting sub-layer, a second light-transmitting sub-layer, and a color conversion sub-layer that are sequentially disposed on the excitation chip; The light-transmitting sub-layer has a first refractive index, the second light-transmitting sub-layer has a second refractive index, and the color conversion sub-layer has a third refractive index;
所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
在本申请实施例的所述显示面板中,所述第一折射率小于或等于所述第三折射率。In the display panel of the embodiment of the present application, the first refractive index is less than or equal to the third refractive index.
在本申请实施例的所述显示面板中,所述色彩转换子层的厚度介于190纳米至240纳米之间。In the display panel of the embodiment of the present application, the thickness of the color conversion sublayer is between 190 nanometers and 240 nanometers.
本申请还涉及一种显示面板的制备方法,其包括以下步骤:This application also relates to a method for manufacturing a display panel, which includes the following steps:
提供一阵列基板;Provide an array substrate;
将多个第一芯片和多个第二芯片依次转移到所述阵列基板上,所述多个第一芯片发蓝光,部分所述第一芯片为激发芯片;Sequentially transferring a plurality of first chips and a plurality of second chips onto the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;
在所述激发芯片上形成色彩转换层,所述色彩转换层被激发的颜色光、所述多个第一芯片发出的颜色光和所述多个第二芯片发出的颜色光各不相同。A color conversion layer is formed on the excitation chip, and the color light excited by the color conversion layer, the color light emitted by the plurality of first chips, and the color light emitted by the plurality of second chips are different from each other.
在本申请实施例的所述显示面板的制备方法中,所述在所述激发芯片上形成色彩转换层,包括以下步骤:In the manufacturing method of the display panel of the embodiment of the present application, the forming a color conversion layer on the excitation chip includes the following steps:
在所述阵列基板上形成一光阻层,所述光阻层覆盖所述多个第一芯片、所述多个第二芯片和所述阵列基板;Forming a photoresist layer on the array substrate, the photoresist layer covering the plurality of first chips, the plurality of second chips and the array substrate;
对所述光阻层进行曝光和显影处理,在所述光阻层中形成对应于所述激发芯片的开孔,以裸露出所述激发芯片;Exposing and developing the photoresist layer, and forming an opening corresponding to the excitation chip in the photoresist layer to expose the excitation chip;
在所述开孔内形成色彩转换层,并固化所述色彩转换层;Forming a color conversion layer in the openings, and curing the color conversion layer;
剥离所述光阻层。Peel off the photoresist layer.
在本申请实施例的所述显示面板的制备方法中,所述开孔的深度大于所述色彩转换层的厚度。In the manufacturing method of the display panel of the embodiment of the present application, the depth of the opening is greater than the thickness of the color conversion layer.
在本申请实施例的所述显示面板的制备方法中,所述第二芯片发红光或绿光,所述色彩转换层被激发出绿光或红光。In the manufacturing method of the display panel of the embodiment of the present application, the second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light.
在本申请实施例的所述显示面板的制备方法中,所述色彩转换层的材料包括量子点、荧光粉和钙钛矿中的一种。In the manufacturing method of the display panel of the embodiment of the present application, the material of the color conversion layer includes one of quantum dots, phosphors, and perovskites.
在本申请实施例的所述显示面板的制备方法中,所述色彩转换层为单层结构。In the manufacturing method of the display panel of the embodiment of the present application, the color conversion layer has a single-layer structure.
在本申请另一实施例的所述显示面板的制备方法中,所述在所述激发芯片上形成色彩转换层,包括以下步骤:In the method for manufacturing the display panel according to another embodiment of the present application, the forming a color conversion layer on the excitation chip includes the following steps:
在所述阵列基板上形成一光阻层,所述光阻层覆盖所述多个第一芯片、所述多个第二芯片和所述阵列基板;Forming a photoresist layer on the array substrate, the photoresist layer covering the plurality of first chips, the plurality of second chips and the array substrate;
对所述光阻层进行曝光和显影处理,在所述光阻层中形成对应于所述激发芯片的开孔,以裸露出所述激发芯片;Exposing and developing the photoresist layer, and forming an opening corresponding to the excitation chip in the photoresist layer to expose the excitation chip;
在所述开孔内依次形成第一透光子层、第二透光子层和色彩转换子层,以形成所述色彩转换层,并固化所述色彩转换层;Sequentially forming a first light-transmitting sub-layer, a second light-transmitting sub-layer, and a color conversion sub-layer in the openings to form the color conversion layer, and cure the color conversion layer;
剥离所述光阻层。Peel off the photoresist layer.
在本申请另一实施例的所述显示面板的制备方法中,所述第一透光子层具有第一折射率,所述第二透光子层具有第二折射率,所述色彩转换子层具有第三折射率;In the manufacturing method of the display panel according to another embodiment of the present application, the first light-transmitting sub-layer has a first refractive index, the second light-transmitting sub-layer has a second refractive index, and the color converter The layer has a third refractive index;
所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
在本申请另一实施例的所述显示面板的制备方法中,所述第一折射率小于或等于所述第三折射率。In the manufacturing method of the display panel according to another embodiment of the present application, the first refractive index is less than or equal to the third refractive index.
在本申请另一实施例的所述显示面板的制备方法中,所述色彩转换子层的厚度介于190纳米至240纳米之间。In the manufacturing method of the display panel according to another embodiment of the present application, the thickness of the color conversion sub-layer is between 190 nanometers and 240 nanometers.
本申请的显示面板及其制备方法通过在阵列基板上设置第一芯片和第二芯片,并在部分第一芯片(激发芯片)上设置色彩转换层,使得激发芯片组合色彩转换层的结构发出第三种颜色的光;该方法只需进行第一芯片和第二芯片两次转移,随后在激发芯片上形成色彩转换层,使得激发芯片发光激发色彩转换层发出另一种颜色光,该方法无需进行三次芯片的转移,提高了制备效果。The display panel and the manufacturing method thereof of the present application provide a first chip and a second chip on an array substrate, and a color conversion layer on part of the first chip (excitation chip), so that the structure of the excitation chip combined with the color conversion layer emits the first chip and the second chip. Three colors of light; this method only needs to transfer the first chip and the second chip twice, and then form a color conversion layer on the excitation chip, so that the excitation chip emits light and the color conversion layer emits another color light. This method does not require Three chip transfers are performed to improve the preparation effect.
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获取其他的附图。In order to explain the embodiments of the present application or the technical solutions in the prior art more clearly, the following briefly introduces the drawings that need to be used in the embodiments. The drawings in the following description are only part of the embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work.
图1为本申请第一实施例的显示面板的结构示意图;FIG. 1 is a schematic diagram of the structure of a display panel according to the first embodiment of the application;
图2为本申请第二实施例的显示面板的结构示意图;2 is a schematic structural diagram of a display panel according to a second embodiment of the application;
图3为本申请第一实施例的显示面板的制备方法的流程图;FIG. 3 is a flowchart of a manufacturing method of the display panel according to the first embodiment of the application;
图4A为本申请第一实施例的显示面板的制备方法的步骤S2的结构示意图;4A is a schematic structural diagram of step S2 of the manufacturing method of the display panel according to the first embodiment of the application;
图4B为本申请第一实施例的显示面板的制备方法的步骤S3的结构示意图;4B is a schematic structural diagram of step S3 of the manufacturing method of the display panel according to the first embodiment of the application;
图5为本申请第二实施例的显示面板的制备方法的步骤S3的流程图;5 is a flowchart of step S3 of the manufacturing method of the display panel according to the second embodiment of the application;
图5A为本申请第一实施例的显示面板的制备方法的步骤S31的结构示意图;FIG. 5A is a schematic structural diagram of step S31 of the manufacturing method of the display panel according to the first embodiment of the application; FIG.
图5B为本申请第一实施例的显示面板的制备方法的步骤S32的结构示意图;5B is a schematic structural diagram of step S32 of the manufacturing method of the display panel according to the first embodiment of the application;
图5C为本申请第一实施例的显示面板的制备方法的步骤S33的结构示意图;5C is a schematic structural diagram of step S33 of the manufacturing method of the display panel according to the first embodiment of the application;
图5D为本申请第一实施例的显示面板的制备方法的步骤S34的结构示意图;5D is a schematic structural diagram of step S34 of the manufacturing method of the display panel according to the first embodiment of the application;
图6为本申请第二实施例的显示面板的制备方法的步骤S3′的流程图;FIG. 6 is a flowchart of step S3' of the manufacturing method of the display panel according to the second embodiment of the application;
图6A为本申请第二实施例的显示面板的制备方法的步骤S33′的结构示意图。FIG. 6A is a schematic structural diagram of step S33' of the manufacturing method of the display panel according to the second embodiment of the application.
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work shall fall within the protection scope of this application.
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。In the description of this application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" and other directions or The positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it cannot be understood as a restriction on this application. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, "multiple" means two or more than two, unless otherwise specifically defined.
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接或可以相互通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。In the description of this application, it should be noted that the terms "installation", "connection", and "connection" should be understood in a broad sense, unless otherwise clearly specified and limited. For example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, or electrically connected or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relationship. For those of ordinary skill in the art, the specific meanings of the above-mentioned terms in this application can be understood according to specific circumstances.
在本申请中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。In this application, unless expressly stipulated and defined otherwise, the "above" or "below" of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them. Moreover, "above", "above" and "above" the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than that of the second feature. The "below", "below" and "below" the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本申请。此外,本申请可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本申请提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。The following disclosure provides many different embodiments or examples for realizing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are only examples, and are not intended to limit the application. In addition, the present application may repeat reference numerals and/or reference letters in different examples. Such repetition is for the purpose of simplification and clarity, and does not indicate the relationship between the various embodiments and/or settings discussed. In addition, this application provides examples of various specific processes and materials, but those of ordinary skill in the art may be aware of the application of other processes and/or the use of other materials.
请参照图1,图1为本申请第一实施例的显示面板的结构示意图。Please refer to FIG. 1, which is a schematic structural diagram of a display panel according to a first embodiment of the application.
本申请实施例提供一种显示面板100,其包括阵列基板11、多个第一芯片12、多个第二芯片13和多个色彩转换层14。阵列基板11用于驱动第一芯片12和第二芯片13发光。An embodiment of the present application provides a display panel 100 that includes an array substrate 11, a plurality of first chips 12, a plurality of second chips 13 and a plurality of color conversion layers 14. The array substrate 11 is used to drive the first chip 12 and the second chip 13 to emit light.
多个第一芯片12设置在阵列基板11上。多个第一芯片12发蓝光。部分第一芯片12为激发芯片12a。激发芯片12a为用于发光照射色彩转换层14,并激发色彩转换层14发光的芯片。多个第二芯片13设置在阵列基板11上。另外,第一芯片12的数量多于第二芯片13的数量,因为部分第一芯片12要用于作为激发芯片12a,以确保全彩显示的均衡性。可选的,第一芯片12的数量为第二芯片13的两倍。A plurality of first chips 12 are provided on the array substrate 11. The plurality of first chips 12 emit blue light. Part of the first chip 12 is an excitation chip 12a. The excitation chip 12a is a chip for illuminating the color conversion layer 14 with light, and exciting the color conversion layer 14 to emit light. A plurality of second chips 13 are provided on the array substrate 11. In addition, the number of the first chips 12 is more than the number of the second chips 13 because part of the first chips 12 are used as excitation chips 12a to ensure the balance of the full-color display. Optionally, the number of the first chips 12 is twice that of the second chips 13.
多个色彩转换层14一一对应地设置在激发芯片12a上。多个色彩转换层14被激发的颜色光、多个第一芯片12发出的颜色光和多个第二芯片13发出的颜色光各不相同。A plurality of color conversion layers 14 are arranged on the excitation chip 12a in a one-to-one correspondence. The color light emitted by the plurality of color conversion layers 14, the color light emitted by the plurality of first chips 12 and the color light emitted by the plurality of second chips 13 are different from each other.
本第一实施例的显示面板100通过在阵列基板11上设置第一芯片12和第二芯片13,并在部分第一芯片12(激发芯片12a)上设置色彩转换层14,使得激发芯片12a组合色彩转换层14的结构发出第三种颜色的光。该方法只需进行第一芯片12和第二芯片13两次转移,随后在激发芯片12a上形成色彩转换层14,使得激发芯片12a发光激发色彩转换层14发出另一种颜色光,该方法无需进行三次芯片的转移,提高了制备效果。In the display panel 100 of the first embodiment, the first chip 12 and the second chip 13 are arranged on the array substrate 11, and the color conversion layer 14 is arranged on part of the first chip 12 (the excitation chip 12a), so that the excitation chip 12a is combined The structure of the color conversion layer 14 emits light of the third color. This method only needs to transfer the first chip 12 and the second chip 13 twice, and then form the color conversion layer 14 on the excitation chip 12a, so that the excitation chip 12a emits light and the color conversion layer 14 emits another color light. Three chip transfers are performed to improve the preparation effect.
在本第一实施例的显示面板100中,第二芯片13发红光或绿光。色彩转换层14被激发出绿光或红光。也就是说,当第二芯片13发红光时,色彩转换层14被激发出绿光。当第二芯片13发绿光时,色彩转换层14被激发出红光。In the display panel 100 of the first embodiment, the second chip 13 emits red light or green light. The color conversion layer 14 is excited to emit green light or red light. That is, when the second chip 13 emits red light, the color conversion layer 14 is excited to emit green light. When the second chip 13 emits green light, the color conversion layer 14 is excited to emit red light.
在现有技术中,由于红色芯片制作过程不同于与绿、蓝色芯片,需要在不同衬底上生长,则将芯片转移至阵列基板的这一制程受到了很大困难。并且目前,微型LED的红色芯片具有发光效率差、易碎等问题。因此在本第一实施例的显示面板100中,第二芯片13发绿光,色彩转换层14被激发出红光。即第二芯片13为绿色芯片。且采用第一芯片12组合红色的色彩转换层14的结构替代红色芯片,一方面提高了显示面板100的制备效率,另一方面提高了红光的发光效率。In the prior art, since the red chip manufacturing process is different from that of the green and blue chips and needs to be grown on different substrates, the process of transferring the chips to the array substrate is very difficult. At present, the red chip of the micro LED has problems such as poor luminous efficiency and fragility. Therefore, in the display panel 100 of the first embodiment, the second chip 13 emits green light, and the color conversion layer 14 is excited to emit red light. That is, the second chip 13 is a green chip. In addition, the first chip 12 combined with the red color conversion layer 14 is used to replace the red chip. On the one hand, the manufacturing efficiency of the display panel 100 is improved, and on the other hand, the luminous efficiency of red light is improved.
在本第一实施例的显示面板100中,色彩转换层14的材料包括量子点、荧光粉和钙钛矿中的一种。可选的,色彩转换层14为量子点层。In the display panel 100 of the first embodiment, the material of the color conversion layer 14 includes one of quantum dots, phosphors, and perovskite. Optionally, the color conversion layer 14 is a quantum dot layer.
在本第一实施例的显示面板100中,色彩转换层14为单层结构。In the display panel 100 of the first embodiment, the color conversion layer 14 has a single-layer structure.
请参照图2,图2为本申请第二实施例的显示面板的结构示意图。Please refer to FIG. 2, which is a schematic structural diagram of a display panel according to a second embodiment of the application.
本申请实施例提供二种显示面板200,其包括阵列基板21、多个第一芯片22、多个第二芯片23和多个色彩转换层24。部分第一芯片22为激发芯片22a。The embodiment of the present application provides two types of display panels 200, which include an array substrate 21, a plurality of first chips 22, a plurality of second chips 23, and a plurality of color conversion layers 24. Part of the first chip 22 is an excitation chip 22a.
在本第二实施例的显示面板200与第一实施例的显示面板100的不同之处在于:色彩转换层24包括依次设置在激发芯片22a上的第一透光子层241、第二透光子层242和色彩转换子层243。第一透光子层241具有第一折射率,第二透光子层242具有第二折射率,色彩转换子层243具有第三折射率。The difference between the display panel 200 of the second embodiment and the display panel 100 of the first embodiment is that the color conversion layer 24 includes a first light-transmitting sub-layer 241 and a second light-transmitting sub-layer 241 and a second light-transmitting sub-layer sequentially disposed on the excitation chip 22a. A sub-layer 242 and a color conversion sub-layer 243. The first light-transmitting sub-layer 241 has a first refractive index, the second light-transmitting sub-layer 242 has a second refractive index, and the color conversion sub-layer 243 has a third refractive index.
第二折射率大于第一折射率,第二折射率大于第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
其中,将第二折射率设置为大于第三折射率,当光线的入射角大于全内反射临界角时,光线在第二透光子层242和色彩转换子层243的界面发生全内反射。但事实上,光线辐射至色彩转换子层243且在反射之前,其光能量会进入色彩转换子层243一定的深度,而进入色彩转换子层243内传播的光波为倏逝波。此时倏逝波会激发色彩转换子层243,促使色彩转换子层243辐射荧光。比如色彩转换子层243为红色材料形成,则发出红色光。The second refractive index is set to be greater than the third refractive index. When the incident angle of the light is greater than the critical angle of total internal reflection, total internal reflection of the light occurs at the interface between the second light-transmitting sub-layer 242 and the color conversion sub-layer 243. But in fact, before the light radiates to the color conversion sub-layer 243 and is reflected, its light energy enters the color conversion sub-layer 243 to a certain depth, and the light waves propagating in the color conversion sub-layer 243 are evanescent waves. At this time, the evanescent wave will excite the color conversion sub-layer 243, which causes the color conversion sub-layer 243 to radiate fluorescence. For example, the color conversion sub-layer 243 is formed of a red material and emits red light.
当然,当光线的入射角小于或等于全内反射临界角时,光线则直接进入色彩转换子层243。Of course, when the incident angle of the light is less than or equal to the critical angle of total internal reflection, the light directly enters the color conversion sub-layer 243.
可选的,色彩转换子层243的材料为量子点、荧光粉或钙钛矿中的一种。在本实施例的色彩转换子层243中,色彩转换子层243的材料为量子点。而倏逝波在量子点膜层(色彩转换子层243)的深入范围大约在200纳米。因此量子点膜层(色彩转换子层243)的厚度可设置为介于190纳米至240纳米之间。优选的,色彩转换子层243的厚度为200纳米。Optionally, the material of the color conversion sub-layer 243 is one of quantum dots, phosphors, or perovskite. In the color conversion sub-layer 243 of this embodiment, the material of the color conversion sub-layer 243 is quantum dots. The depth range of the evanescent wave in the quantum dot film (color conversion sub-layer 243) is about 200 nanometers. Therefore, the thickness of the quantum dot film layer (color conversion sub-layer 243) can be set to be between 190 nanometers and 240 nanometers. Preferably, the thickness of the color conversion sub-layer 243 is 200 nanometers.
因此相较于现有技术的用于显示领域的量子点膜层,本第二实施例将第二折射率设置为大于第三折射率,降低了量子点膜层所需的厚度。Therefore, compared with the quantum dot film layer used in the display field in the prior art, the second refractive index is set to be greater than the third refractive index in the second embodiment, which reduces the required thickness of the quantum dot film layer.
另外,在本第二实施例中,当与色彩转换子层243光转换作用后剩余的光会按照反射定律回到第二透光子层242中,而由于将第二折射率设置为大于第一折射率,因此反射回的光线在第二透光子层242和第一透光子层241的界面发生全内反射,将光线再次导向色彩转换子层243,对色彩转换子层243进行二次激发,提高了光的利用率。In addition, in the second embodiment, the remaining light after light conversion with the color conversion sub-layer 243 will return to the second light-transmitting sub-layer 242 according to the law of reflection, and since the second refractive index is set to be greater than the first light-transmitting sub-layer 242 A refractive index, so the reflected light undergoes total internal reflection at the interface between the second light-transmitting sub-layer 242 and the first light-transmitting sub-layer 241, and the light is directed to the color conversion sub-layer 243 again, and the color conversion sub-layer 243 is twice Secondary excitation improves the utilization rate of light.
进一步的,第一折射率小于或等于第三折射率。这样的设置,避免了极小部分从第二透光子层242和色彩转换子层243的界面反射的光线透过第一透光子层241。也就是说,确保了从第二透光子层242和色彩转换子层243的界面反射的光线在第二透光子层242和第一透光子层241的界面发生全内反射,并形成类似平板波导的导光效果,进一步提高了对光线的利用率。Further, the first refractive index is less than or equal to the third refractive index. This arrangement prevents a very small portion of the light reflected from the interface between the second light-transmitting sub-layer 242 and the color conversion sub-layer 243 from passing through the first light-transmitting sub-layer 241. That is to say, it is ensured that the light reflected from the interface of the second light-transmitting sub-layer 242 and the color conversion sub-layer 243 undergoes total internal reflection at the interface of the second light-transmitting sub-layer 242 and the first light-transmitting sub-layer 241, and forms The light guiding effect similar to the slab waveguide further improves the utilization rate of light.
请参照图3、图4A-4B,图3为本申请第一实施例的显示面板的制备方法的流程图;图4A为本申请第一实施例的显示面板的制备方法的步骤S2的结构示意图;图4B为本申请第一实施例的显示面板的制备方法的步骤S3的结构示意图。Please refer to FIGS. 3 and 4A-4B. FIG. 3 is a flowchart of the method for manufacturing the display panel according to the first embodiment of the application; FIG. 4A is a schematic diagram of the structure of step S2 of the method for manufacturing the display panel according to the first embodiment of the application. 4B is a schematic structural diagram of step S3 of the method for manufacturing a display panel according to the first embodiment of the application.
本申请第一实施例的显示面板的制备方法,其包括以下步骤:The manufacturing method of the display panel of the first embodiment of the present application includes the following steps:
步骤S1:提供一阵列基板11;Step S1: Provide an array substrate 11;
步骤S2:将多个第一芯片12和多个第二芯片13依次转移到所述阵列基板11上,所述多个第一芯片12发蓝光,部分所述第一芯片12为激发芯片12a;Step S2: sequentially transfer a plurality of first chips 12 and a plurality of second chips 13 onto the array substrate 11, the plurality of first chips 12 emit blue light, and some of the first chips 12 are excitation chips 12a;
步骤S3:在所述激发芯片12a上形成色彩转换层14,所述色彩转换层14被激发的颜色光、所述多个第一芯片12发出的颜色光和所述多个第二芯片13发出的颜色光各不相同。Step S3: forming a color conversion layer 14 on the excitation chip 12a, the color light excited by the color conversion layer 14, the color light emitted by the plurality of first chips 12, and the color light emitted by the plurality of second chips 13 The color of light varies.
本第一实施例的显示面板的制备方法只需进行第一芯片12和第二芯片13两次转移,随后在激发芯片12a上形成色彩转换层14,使得激发芯片12a发光激发色彩转换层14发出另一种颜色光,该方法无需进行三次芯片的转移,提高了制备效果。The manufacturing method of the display panel of the first embodiment only needs to transfer the first chip 12 and the second chip 13 twice, and then form the color conversion layer 14 on the excitation chip 12a, so that the excitation chip 12a emits light and stimulates the color conversion layer 14 to emit light. Another kind of color light, this method does not require three chip transfers, which improves the preparation effect.
下面对本第一实施例的显示面板的制备方法进行阐述。The manufacturing method of the display panel of the first embodiment will be described below.
在步骤S1中,提供一阵列基板11。阵列基板11包括电路结构,该电路结构电性连接于第一芯片12和第二芯片13,用于驱动第一芯片12和第二芯片13发光。随后转入步骤S2。In step S1, an array substrate 11 is provided. The array substrate 11 includes a circuit structure electrically connected to the first chip 12 and the second chip 13 for driving the first chip 12 and the second chip 13 to emit light. Then go to step S2.
在步骤S2中,请参照图4A。将多个第一芯片12和多个第二芯片13依次转移到所述阵列基板11上。In step S2, please refer to FIG. 4A. The plurality of first chips 12 and the plurality of second chips 13 are sequentially transferred onto the array substrate 11.
具体的,所述多个第一芯片12发蓝光,部分所述第一芯片12为激发芯片12a。激发芯片12a为用于发光照射色彩转换层14,并激发色彩转换层14发光的芯片。在本第一实施例中,第一芯片12的数量多于第二芯片13的数量,因为部分第一芯片12要用于作为激发芯片12a,以确保全彩显示的均衡性。可选的,第一芯片12的数量为第二芯片13的两倍。随后转入步骤S3。Specifically, the plurality of first chips 12 emit blue light, and some of the first chips 12 are excitation chips 12a. The excitation chip 12a is a chip for illuminating the color conversion layer 14 with light, and exciting the color conversion layer 14 to emit light. In the first embodiment, the number of the first chips 12 is more than the number of the second chips 13, because part of the first chips 12 are used as excitation chips 12a to ensure the balance of the full-color display. Optionally, the number of the first chips 12 is twice that of the second chips 13. Then go to step S3.
在步骤S3中,请参照图4B。在所述激发芯片12a上形成色彩转换层14。其中,所述色彩转换层14被激发的颜色光、所述多个第一芯片12发出的颜色光和所述多个第二芯片13发出的颜色光各不相同,以实现显示面板的全彩显示。In step S3, please refer to FIG. 4B. A color conversion layer 14 is formed on the excitation chip 12a. Wherein, the color light emitted by the color conversion layer 14, the color light emitted by the plurality of first chips 12, and the color light emitted by the plurality of second chips 13 are different, so as to realize the full color of the display panel. display.
其中,请参照图5。步骤S3包括以下步骤:Among them, please refer to Figure 5. Step S3 includes the following steps:
S31:在所述阵列基板11上形成一光阻层15,所述光阻层15覆盖所述多个第一芯片12、所述多个第二芯片13和所述阵列基板11;S31: forming a photoresist layer 15 on the array substrate 11, the photoresist layer 15 covering the plurality of first chips 12, the plurality of second chips 13, and the array substrate 11;
S32:对所述光阻层15进行曝光和显影处理,在所述光阻层15中形成对应于所述激发芯片的开孔151,以裸露出所述激发芯片12a;S32: Expose and develop the photoresist layer 15 to form an opening 151 corresponding to the excitation chip in the photoresist layer 15 to expose the excitation chip 12a;
S33:在所述开孔151内形成色彩转换层14,并固化所述色彩转换层14;S33: forming a color conversion layer 14 in the opening 151, and curing the color conversion layer 14;
S34:剥离所述光阻层15。S34: Peel off the photoresist layer 15.
具体的,在步骤S31中,请参照图5A。在所述阵列基板11上形成一光阻层15。所述光阻层15覆盖所述多个第一芯片12、所述多个第二芯片13和所述阵列基板11。其中光阻层15可以为正性光阻或负性光阻。在本第一实施例的制备方法中,光阻层15为负性光阻。Specifically, in step S31, please refer to FIG. 5A. A photoresist layer 15 is formed on the array substrate 11. The photoresist layer 15 covers the plurality of first chips 12, the plurality of second chips 13 and the array substrate 11. The photoresist layer 15 can be a positive photoresist or a negative photoresist. In the manufacturing method of the first embodiment, the photoresist layer 15 is a negative photoresist.
可选的,可以采用涂覆的方式在阵列基板11上形成光阻层15。随后转入步骤S32。Optionally, the photoresist layer 15 may be formed on the array substrate 11 by coating. Then go to step S32.
在步骤S32中,请参照图5B。对所述光阻层15进行曝光和显影处理。在所述光阻层15中形成对应于所述激发芯片的开孔151,以裸露出所述激发芯片12a。其中,采用掩模板对光阻层15进行曝光处理,掩模板的遮光部分对应激发芯片12a设置,以遮挡激发芯片12a上的光阻层15,掩模板的透光部分对应其他位置的光阻层15;随后便对光阻层15进行显影处理,以形成裸露出所述激发芯片12a的开孔151。In step S32, please refer to FIG. 5B. The photoresist layer 15 is exposed and developed. An opening 151 corresponding to the excitation chip is formed in the photoresist layer 15 to expose the excitation chip 12a. Wherein, the photoresist layer 15 is exposed by a mask, the light-shielding part of the mask is set corresponding to the excitation chip 12a to block the photoresist layer 15 on the excitation chip 12a, and the light-transmitting part of the mask corresponds to the photoresist layer in other positions 15; Then the photoresist layer 15 is developed to form an opening 151 that exposes the excitation chip 12a.
在步骤S32中,开孔151的周侧设置有底切结构,以便于后续步骤形成非连续的色彩转换层14。另外,开孔151的深度大于后续步骤中色彩转换层14的厚度,便于形成非连续的色彩转换层14。随后转入步骤S33。In step S32, an undercut structure is provided on the peripheral side of the opening 151 to facilitate the formation of the non-continuous color conversion layer 14 in the subsequent steps. In addition, the depth of the opening 151 is greater than the thickness of the color conversion layer 14 in the subsequent steps, which facilitates the formation of the non-continuous color conversion layer 14. Then go to step S33.
在步骤S33中,请参照图5C。在所述开孔151内形成色彩转换层14,并固化所述色彩转换层14。色彩转换层14为单层结构。In step S33, please refer to FIG. 5C. A color conversion layer 14 is formed in the opening 151, and the color conversion layer 14 is cured. The color conversion layer 14 has a single-layer structure.
其中,采用对阵列基板11整面涂覆的方式形成色彩转换材料层。当色彩转换材料层位于开孔151的位置时,由于开孔151的深度和底切结构的作用,使得位于开孔151内的色彩转换材料层和其他色彩转换材料层断开,从而一次性形成色彩转换层14,提高了制备效率。随后,采用曝光或加热的方式对色彩转换层14进行固化处理。Wherein, the color conversion material layer is formed by coating the entire surface of the array substrate 11. When the color conversion material layer is located at the position of the opening 151, due to the depth of the opening 151 and the undercut structure, the color conversion material layer and other color conversion material layers in the opening 151 are disconnected, thereby forming a one-time formation The color conversion layer 14 improves the production efficiency. Subsequently, the color conversion layer 14 is cured by exposure or heating.
可选的,第二芯片13发红光或绿光,色彩转换层14被激发出绿光或红光。也就是说,当第二芯片13发红光时,色彩转换层14被激发出绿光。当第二芯片13发绿光时,色彩转换层14被激发出红光。Optionally, the second chip 13 emits red light or green light, and the color conversion layer 14 is excited to emit green light or red light. That is, when the second chip 13 emits red light, the color conversion layer 14 is excited to emit green light. When the second chip 13 emits green light, the color conversion layer 14 is excited to emit red light.
在现有技术中,由于红色芯片制作过程不同于与绿、蓝色芯片,需要在不同衬底上生长,则将芯片转移至阵列基板的这一制程受到了很大困难。并且目前,微型LED的红色芯片具有发光效率差、易碎等问题。因此在本第一实施例的制备方法中,第二芯片13发绿光,色彩转换层14被激发出红光。即第二芯片13为绿色芯片。且采用第一芯片12组合红色的色彩转换层14的结构替代红色芯片,一方面提高了显示面板的制备效率,另一方面提高了红光的发光效率。In the prior art, since the red chip manufacturing process is different from that of the green and blue chips and needs to be grown on different substrates, the process of transferring the chips to the array substrate is very difficult. At present, the red chip of the micro LED has problems such as poor luminous efficiency and fragility. Therefore, in the manufacturing method of the first embodiment, the second chip 13 emits green light, and the color conversion layer 14 is excited to emit red light. That is, the second chip 13 is a green chip. In addition, the first chip 12 combined with the red color conversion layer 14 is used to replace the red chip, which improves the manufacturing efficiency of the display panel on the one hand, and improves the luminous efficiency of red light on the other hand.
另外,色彩转换层14的材料包括量子点、荧光粉和钙钛矿中的一种。可选的,色彩转换层14为量子点层。随后转入步骤S34。In addition, the material of the color conversion layer 14 includes one of quantum dots, phosphors, and perovskite. Optionally, the color conversion layer 14 is a quantum dot layer. Then go to step S34.
在步骤S34中,请参照图5D。剥离所述光阻层15。具体的,采用光阻剥离液对光阻层15进行剥离处理,以获得显示面板。In step S34, please refer to FIG. 5D. The photoresist layer 15 is peeled off. Specifically, the photoresist layer 15 is stripped off using a photoresist stripping solution to obtain a display panel.
这样便完成了本第一实施例的显示面板的制备过程。This completes the manufacturing process of the display panel of the first embodiment.
请参照图6和图6A,本第二实施例的显示面板的制备方法与第一实施例的显示面板的制备方法的不同之处在于,步骤S3′包括以下步骤:6 and 6A, the manufacturing method of the display panel of the second embodiment is different from the manufacturing method of the display panel of the first embodiment in that step S3' includes the following steps:
步骤S31′:在所述阵列基板21上形成一光阻层25,所述光阻层25覆盖所述多个第一芯片22、所述多个第二芯片23和所述阵列基板21;Step S31': forming a photoresist layer 25 on the array substrate 21, the photoresist layer 25 covering the plurality of first chips 22, the plurality of second chips 23 and the array substrate 21;
步骤S32′:对所述光阻层25进行曝光和显影处理,在所述光阻层25中形成对应于所述激发芯片22a的开孔251,以裸露出所述激发芯片22a;Step S32': Expose and develop the photoresist layer 25, and form an opening 251 in the photoresist layer 25 corresponding to the excitation chip 22a to expose the excitation chip 22a;
步骤S33′:在所述开孔251内依次形成第一透光子层241、第二透光子层242和色彩转换子层243,以形成所述色彩转换层24,并固化所述色彩转换层24;Step S33': sequentially form a first light-transmitting sub-layer 241, a second light-transmitting sub-layer 242, and a color conversion sub-layer 243 in the opening 251 to form the color conversion layer 24, and cure the color conversion Layer 24;
步骤S34′:剥离所述光阻层25。Step S34': peel off the photoresist layer 25.
其中,步骤S31′、S32′和S34′一一对应的与第一实施例的制备方法的步骤S31、S32和S34相同,具体请参照第一实施例的制备方法的步骤S31、S32和S34的内容,此处不再赘述。Among them, steps S31', S32', and S34' correspond to steps S31, S32, and S34 of the preparation method of the first embodiment one-to-one. For details, please refer to the steps S31, S32, and S34 of the preparation method of the first embodiment. The content will not be repeated here.
在步骤S33′中,请参照图6A。在所述开孔251内依次形成第一透光子层241、第二透光子层242和色彩转换子层243,以形成所述色彩转换层24,并固化所述色彩转换层24。第一透光子层241、第二透光子层242也可以采用涂覆的方式形成。In step S33', please refer to FIG. 6A. A first light-transmitting sub-layer 241, a second light-transmitting sub-layer 242, and a color conversion sub-layer 243 are sequentially formed in the opening 251 to form the color conversion layer 24, and the color conversion layer 24 is cured. The first light-transmitting sub-layer 241 and the second light-transmitting sub-layer 242 may also be formed by coating.
在本第二实施例的制备方法中,第一透光子层241具有第一折射率,第二透光子层242具有第二折射率,色彩转换子层243具有第三折射率。In the manufacturing method of the second embodiment, the first light-transmitting sub-layer 241 has a first refractive index, the second light-transmitting sub-layer 242 has a second refractive index, and the color conversion sub-layer 243 has a third refractive index.
所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
其中,将第二折射率设置为大于第三折射率,当光线的入射角大于全内反射临界角时,光线在第二透光子层242和色彩转换子层243的界面发生全内反射。但事实上,光线辐射至色彩转换子层243且在反射之前,其光能量会进入色彩转换子层243一定的深度,而进入色彩转换子层243内传播的光波为倏逝波。此时倏逝波会激发色彩转换子层243,促使色彩转换子层243辐射荧光。比如色彩转换子层243为红色材料形成,则发出红色光。The second refractive index is set to be greater than the third refractive index. When the incident angle of the light is greater than the critical angle of total internal reflection, total internal reflection of the light occurs at the interface between the second light-transmitting sub-layer 242 and the color conversion sub-layer 243. But in fact, before the light radiates to the color conversion sub-layer 243 and is reflected, its light energy enters the color conversion sub-layer 243 to a certain depth, and the light waves propagating in the color conversion sub-layer 243 are evanescent waves. At this time, the evanescent wave will excite the color conversion sub-layer 243, which causes the color conversion sub-layer 243 to radiate fluorescence. For example, the color conversion sub-layer 243 is formed of a red material and emits red light.
当然,当光线的入射角小于或等于全内反射临界角时,光线则直接进入色彩转换子层243。Of course, when the incident angle of the light is less than or equal to the critical angle of total internal reflection, the light directly enters the color conversion sub-layer 243.
可选的,色彩转换子层243的材料为量子点、荧光粉或钙钛矿中的一种。在本实施例的色彩转换子层243中,色彩转换子层243的材料为量子点。而倏逝波在量子点膜层(色彩转换子层243)的深入范围大约在200纳米。因此量子点膜层(色彩转换子层243)的厚度可设置为介于190纳米至240纳米之间。优选的,色彩转换子层243的厚度为200纳米。Optionally, the material of the color conversion sub-layer 243 is one of quantum dots, phosphors, or perovskite. In the color conversion sub-layer 243 of this embodiment, the material of the color conversion sub-layer 243 is quantum dots. The depth range of the evanescent wave in the quantum dot film (color conversion sub-layer 243) is about 200 nanometers. Therefore, the thickness of the quantum dot film layer (color conversion sub-layer 243) can be set to be between 190 nanometers and 240 nanometers. Preferably, the thickness of the color conversion sub-layer 243 is 200 nanometers.
因此相较于现有技术的用于显示领域的量子点膜层,本第二实施例将第二折射率设置为大于第三折射率,降低了量子点膜层所需的厚度。Therefore, compared with the quantum dot film layer used in the display field in the prior art, the second refractive index is set to be greater than the third refractive index in the second embodiment, which reduces the required thickness of the quantum dot film layer.
另外,在本第二实施例中,当与色彩转换子层243光转换作用后剩余的光会按照反射定律回到第二透光子层242中,而由于将第二折射率设置为大于第一折射率,因此反射回的光线在第二透光子层242和第一透光子层241的界面发生全内反射,将光线再次导向色彩转换子层243,对色彩转换子层243进行二次激发,提高了光的利用率。In addition, in the second embodiment, the remaining light after light conversion with the color conversion sub-layer 243 will return to the second light-transmitting sub-layer 242 according to the law of reflection, and since the second refractive index is set to be greater than the first light-transmitting sub-layer 242 A refractive index, so the reflected light undergoes total internal reflection at the interface between the second light-transmitting sub-layer 242 and the first light-transmitting sub-layer 241, and the light is directed to the color conversion sub-layer 243 again, and the color conversion sub-layer 243 is twice Secondary excitation improves the utilization rate of light.
进一步的,第一折射率小于或等于第三折射率。这样的设置,避免了极小部分从第二透光子层242和色彩转换子层243的界面反射的光线透过第一透光子层241。也就是说,确保了从第二透光子层242和色彩转换子层243的界面反射的光线在第二透光子层242和第一透光子层241的界面发生全内反射,并形成类似平板波导的导光效果,进一步提高了对光线的利用率。Further, the first refractive index is less than or equal to the third refractive index. This arrangement prevents a very small portion of the light reflected from the interface between the second light-transmitting sub-layer 242 and the color conversion sub-layer 243 from passing through the first light-transmitting sub-layer 241. That is to say, it is ensured that the light reflected from the interface of the second light-transmitting sub-layer 242 and the color conversion sub-layer 243 undergoes total internal reflection at the interface of the second light-transmitting sub-layer 242 and the first light-transmitting sub-layer 241, and forms The light guiding effect similar to the slab waveguide further improves the utilization rate of light.
另外,本第二实施例的制备方法除步骤S3′外的其他步骤与第一实施例的制备方法的相应的步骤相似或相同,具体请参照第一实施例的制备方法,此处不再赘述。In addition, other steps of the preparation method of the second embodiment except step S3' are similar or the same as the corresponding steps of the preparation method of the first embodiment. For details, please refer to the preparation method of the first embodiment, which will not be repeated here. .
本申请的显示面板及其制备方法通过在阵列基板上设置第一芯片和第二芯片,并在部分第一芯片(激发芯片)上设置色彩转换层,使得激发芯片组合色彩转换层的结构发出第三种颜色的光;该方法只需进行第一芯片和第二芯片两次转移,随后在激发芯片上形成色彩转换层,使得激发芯片发光激发色彩转换层发出另一种颜色光,该方法无需进行三次芯片的转移,提高了制备效果。The display panel and the manufacturing method thereof of the present application provide a first chip and a second chip on an array substrate, and a color conversion layer on part of the first chip (excitation chip), so that the structure of the excitation chip combined with the color conversion layer emits the first chip and the second chip. Three colors of light; this method only needs to transfer the first chip and the second chip twice, and then form a color conversion layer on the excitation chip, so that the excitation chip emits light and the color conversion layer emits another color light. This method does not require Three chip transfers are performed to improve the preparation effect.
以上对本申请实施例所提供的一种显示面板及其制备方法进行了详细介绍,本文中应用了具体个例对本申请的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想;本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。The above describes in detail a display panel provided by the embodiments of the present application and the preparation method thereof. Specific examples are used in this article to illustrate the principles and implementations of the present application. The descriptions of the above embodiments are only used to help understand the present application. The applied technical solutions and their core ideas; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or equivalently replace some of the technical features; and these modifications or replacements, The essence of the corresponding technical solutions does not deviate from the scope of the technical solutions of the embodiments of the present application.
Claims (20)
- 一种显示面板,其包括:A display panel, which includes:阵列基板;Array substrate多个第一芯片,所述多个第一芯片设置在所述阵列基板上,所述多个第一芯片发蓝光,部分所述第一芯片为激发芯片;A plurality of first chips, the plurality of first chips are arranged on the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;多个第二芯片,所述多个第二芯片设置在所述阵列基板上;以及A plurality of second chips, the plurality of second chips are disposed on the array substrate; and多个色彩转换层,所述多个色彩转换层一一对应地设置在所述激发芯片上;所述多个色彩转换层被激发的颜色光、所述多个第一芯片发出的颜色光和所述多个第二芯片发出的颜色光各不相同;A plurality of color conversion layers, the plurality of color conversion layers are arranged on the excitation chip in a one-to-one correspondence; the color light excited by the plurality of color conversion layers, the color light emitted by the plurality of first chips, and The color lights emitted by the plurality of second chips are different from each other;所述第二芯片发红光或绿光,所述色彩转换层被激发出绿光或红光;The second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light;所述色彩转换层的材料包括量子点、荧光粉和钙钛矿中的一种。The material of the color conversion layer includes one of quantum dots, phosphors and perovskite.
- 根据权利要求1所述的显示面板,其中,所述色彩转换层为单层结构。The display panel of claim 1, wherein the color conversion layer has a single-layer structure.
- 根据权利要求1所述的显示面板,其中,所述色彩转换层包括依次设置在所述激发芯片上的第一透光子层、第二透光子层和色彩转换子层;所述第一透光子层具有第一折射率,所述第二透光子层具有第二折射率,所述色彩转换子层具有第三折射率;The display panel according to claim 1, wherein the color conversion layer comprises a first light-transmitting sub-layer, a second light-transmitting sub-layer and a color conversion sub-layer that are sequentially disposed on the excitation chip; the first The light-transmitting sub-layer has a first refractive index, the second light-transmitting sub-layer has a second refractive index, and the color conversion sub-layer has a third refractive index;所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- 根据权利要求3所述的显示面板,其中,所述第一折射率小于或等于所述第三折射率。The display panel of claim 3, wherein the first refractive index is less than or equal to the third refractive index.
- 根据权利要求3所述的显示面板,其中,所述色彩转换子层的厚度介于190纳米至240纳米之间。3. The display panel of claim 3, wherein the color conversion sub-layer has a thickness between 190 nanometers and 240 nanometers.
- 一种显示面板,其包括:A display panel, which includes:阵列基板;Array substrate多个第一芯片,所述多个第一芯片设置在所述阵列基板上,所述多个第一芯片发蓝光,部分所述第一芯片为激发芯片;A plurality of first chips, the plurality of first chips are arranged on the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;多个第二芯片,所述多个第二芯片设置在所述阵列基板上;以及A plurality of second chips, the plurality of second chips are disposed on the array substrate; and多个色彩转换层,所述多个色彩转换层一一对应地设置在所述激发芯片上;所述多个色彩转换层被激发的颜色光、所述多个第一芯片发出的颜色光和所述多个第二芯片发出的颜色光各不相同。A plurality of color conversion layers, the plurality of color conversion layers are arranged on the excitation chip in a one-to-one correspondence; the color light excited by the plurality of color conversion layers, the color light emitted by the plurality of first chips, and The color lights emitted by the plurality of second chips are different from each other.
- 根据权利要求6所述的显示面板,其中,所述第二芯片发红光或绿光,所述色彩转换层被激发出绿光或红光。7. The display panel of claim 6, wherein the second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light.
- 根据权利要求6所述的显示面板,其中,所述色彩转换层的材料包括量子点、荧光粉和钙钛矿中的一种。7. The display panel of claim 6, wherein the material of the color conversion layer includes one of quantum dots, phosphors, and perovskite.
- 根据权利要求6所述的显示面板,其中,所述色彩转换层为单层结构。7. The display panel of claim 6, wherein the color conversion layer has a single-layer structure.
- 根据权利要求6所述的显示面板,其中,所述色彩转换层包括依次设置在所述激发芯片上的第一透光子层、第二透光子层和色彩转换子层;所述第一透光子层具有第一折射率,所述第二透光子层具有第二折射率,所述色彩转换子层具有第三折射率;7. The display panel of claim 6, wherein the color conversion layer comprises a first light-transmitting sublayer, a second light-transmitting sublayer, and a color conversion sublayer that are sequentially disposed on the excitation chip; the first The light-transmitting sub-layer has a first refractive index, the second light-transmitting sub-layer has a second refractive index, and the color conversion sub-layer has a third refractive index;所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- 根据权利要求10所述的显示面板,其中,所述第一折射率小于或等于所述第三折射率。10. The display panel of claim 10, wherein the first refractive index is less than or equal to the third refractive index.
- 根据权利要求10所述的显示面板,其中,所述色彩转换子层的厚度介于190纳米至240纳米之间。10. The display panel of claim 10, wherein the color conversion sub-layer has a thickness between 190 nanometers and 240 nanometers.
- 一种显示面板的制备方法,其包括以下步骤:A method for manufacturing a display panel includes the following steps:提供一阵列基板;Provide an array substrate;将多个第一芯片和多个第二芯片依次转移到所述阵列基板上,所述多个第一芯片发蓝光,部分所述第一芯片为激发芯片;Sequentially transferring a plurality of first chips and a plurality of second chips onto the array substrate, the plurality of first chips emit blue light, and some of the first chips are excitation chips;在所述激发芯片上形成色彩转换层,所述色彩转换层被激发的颜色光、所述多个第一芯片发出的颜色光和所述多个第二芯片发出的颜色光各不相同。A color conversion layer is formed on the excitation chip, and the color light excited by the color conversion layer, the color light emitted by the plurality of first chips, and the color light emitted by the plurality of second chips are different from each other.
- 根据权利要求13所述的显示面板的制备方法,其中,所述在所述激发芯片上形成色彩转换层,包括以下步骤:The method for manufacturing a display panel according to claim 13, wherein the forming a color conversion layer on the excitation chip comprises the following steps:在所述阵列基板上形成一光阻层,所述光阻层覆盖所述多个第一芯片、所述多个第二芯片和所述阵列基板;Forming a photoresist layer on the array substrate, the photoresist layer covering the plurality of first chips, the plurality of second chips and the array substrate;对所述光阻层进行曝光和显影处理,在所述光阻层中形成对应于所述激发芯片的开孔,以裸露出所述激发芯片;Exposing and developing the photoresist layer, and forming an opening corresponding to the excitation chip in the photoresist layer to expose the excitation chip;在所述开孔内形成色彩转换层,并固化所述色彩转换层;Forming a color conversion layer in the openings, and curing the color conversion layer;剥离所述光阻层。Peel off the photoresist layer.
- 根据权利要求14所述的显示面板的制备方法,其中,所述开孔的深度大于所述色彩转换层的厚度。14. The method for manufacturing the display panel according to claim 14, wherein the depth of the opening is greater than the thickness of the color conversion layer.
- 根据权利要求13所述的显示面板的制备方法,其中,所述第二芯片发红光或绿光,所述色彩转换层被激发出绿光或红光。The method for manufacturing the display panel according to claim 13, wherein the second chip emits red light or green light, and the color conversion layer is excited to emit green light or red light.
- 根据权利要求13所述的显示面板的制备方法,其中,所述色彩转换层的材料包括量子点、荧光粉和钙钛矿中的一种。The method for manufacturing the display panel according to claim 13, wherein the material of the color conversion layer includes one of quantum dots, phosphors, and perovskites.
- 根据权利要求13所述的显示面板的制备方法,其中,所述在所述激发芯片上形成色彩转换层,包括以下步骤:The method for manufacturing a display panel according to claim 13, wherein the forming a color conversion layer on the excitation chip comprises the following steps:在所述阵列基板上形成一光阻层,所述光阻层覆盖所述多个第一芯片、所述多个第二芯片和所述阵列基板;Forming a photoresist layer on the array substrate, the photoresist layer covering the plurality of first chips, the plurality of second chips and the array substrate;对所述光阻层进行曝光和显影处理,在所述光阻层中形成对应于所述激发芯片的开孔,以裸露出所述激发芯片;Exposing and developing the photoresist layer, and forming an opening corresponding to the excitation chip in the photoresist layer to expose the excitation chip;在所述开孔内依次形成第一透光子层、第二透光子层和色彩转换子层,以形成所述色彩转换层,并固化所述色彩转换层;Sequentially forming a first light-transmitting sub-layer, a second light-transmitting sub-layer, and a color conversion sub-layer in the openings to form the color conversion layer, and cure the color conversion layer;剥离所述光阻层。Peel off the photoresist layer.
- 根据权利要求18所述的显示面板的制备方法,其中,所述第一透光子层具有第一折射率,所述第二透光子层具有第二折射率,所述色彩转换子层具有第三折射率;18. The method of manufacturing a display panel according to claim 18, wherein the first light-transmitting sub-layer has a first refractive index, the second light-transmitting sub-layer has a second refractive index, and the color conversion sub-layer has Third refractive index所述第二折射率大于所述第一折射率,所述第二折射率大于所述第三折射率。The second refractive index is greater than the first refractive index, and the second refractive index is greater than the third refractive index.
- 根据权利要求19所述的显示面板的制备方法,其中,所述第一折射率小于或等于所述第三折射率。18. The method of manufacturing a display panel according to claim 19, wherein the first refractive index is less than or equal to the third refractive index.
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