WO2021093822A1 - 一种射频功率放大器、芯片及通信终端 - Google Patents
一种射频功率放大器、芯片及通信终端 Download PDFInfo
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- WO2021093822A1 WO2021093822A1 PCT/CN2020/128471 CN2020128471W WO2021093822A1 WO 2021093822 A1 WO2021093822 A1 WO 2021093822A1 CN 2020128471 W CN2020128471 W CN 2020128471W WO 2021093822 A1 WO2021093822 A1 WO 2021093822A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/04—Measuring peak values or amplitude or envelope of ac or of pulses
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0233—Continuous control by using a signal derived from the output signal, e.g. bootstrapping the voltage supply
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
- H03F1/0272—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the output signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G9/00—Combinations of two or more types of control, e.g. gain control and tone control
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/102—A non-specified detector of a signal envelope being used in an amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/555—A voltage generating circuit being realised for biasing different circuit elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Definitions
- the invention relates to a radio frequency power amplifier, and also to an integrated circuit chip including the radio frequency power amplifier and a corresponding communication terminal, belonging to the technical field of radio frequency integrated circuits.
- the RF power amplifier is an indispensable key component in wireless communication applications. It is used to power amplify the modulated RF signal output by the transceiver to meet the power requirements of the RF signal required for wireless communication. Due to the performance requirements of wireless communication, the RF power amplifier needs to be power controlled. Moreover, due to process deviations, the gain and output power of the RF power amplifier will also change.
- the first is a power control method based on closed-loop control.
- the power control method mainly controls the final output power of the radio frequency power amplifier by controlling the input power of the radio frequency power amplifier.
- the power control method uses the same bias voltage to generate the output power that meets the demand, when the output power required by the RF power amplifier is small, the current of the RF power amplifier will have a margin, resulting in unnecessary waste. .
- the other is a power control method based on open loop control.
- the power control method mainly realizes the control of the final output power of the radio frequency power amplifier by controlling the voltage. Since the power control method cannot know the output power of the control voltage controlled radio frequency power amplifier, the control voltage cannot accurately control the bias voltage of the radio frequency power amplifier circuit, and thus cannot accurately control the output power of the radio frequency power amplifier.
- the primary technical problem to be solved by the present invention is to provide a radio frequency power amplifier.
- Another technical problem to be solved by the present invention is to provide an integrated circuit chip including the above radio frequency power amplifier and a corresponding communication terminal.
- a radio frequency power amplifier including a power amplifier circuit, an output matching circuit, a power detection circuit, and a bias comparison circuit; the power amplifier circuit and the output matching circuit are connected to form a In the main signal path of the radio frequency power amplifier, the input end of the power detection circuit is connected to a certain node on the main signal path, and the output end of the power detection circuit is connected to the input end of the bias comparison circuit, The output terminal of the bias comparison circuit is connected to the bias terminal and/or the collector terminal of the power amplifier circuit;
- the output power on the main signal path is detected by the power detection circuit, and an equivalent voltage proportional to the output power is obtained.
- the equivalent voltage is input to the bias comparison circuit, according to the power Adjusting the value of the equivalent voltage for different bias states required by different bias terminals of the amplifying circuit to obtain one or more branch equivalent voltages;
- the equivalent voltage of each branch is compared with the control voltage previously input to the bias comparison circuit, and the bias voltage and/or collector voltage are continuously provided for the power amplifier circuit until the control voltage is equal to the control voltage.
- the output power level of the radio frequency power amplifier is corresponding to control the output power of the radio frequency power amplifier under different power levels to be stable.
- the power detection circuit includes a coupler and an envelope detector
- the input end of the coupler is connected to the output end of the power amplifier circuit through the output matching circuit
- the through output of the coupler is The output terminal of the coupler is connected to the output load
- the coupled output terminal of the coupler is connected to the input terminal of the envelope detector
- the output terminal of the envelope detector is connected to the input terminal of the bias comparison circuit.
- a capacitor is used to replace the coupler.
- the envelope detector includes a first resistor, a second resistor, a third resistor, a first diode, a fourth resistor, and a first capacitor; the first resistor is connected to the second resistor Between the power supply and the ground, the third resistor is connected between the anode of the first diode and the common node of the first resistor and the second resistor, and the cathode of the first diode It is connected to the ground through the parallel network of the fourth resistor and the first capacitor.
- the bias comparison circuit includes N low-dropout linear regulators, where N is a positive integer; the input end of each low-dropout linear regulator is respectively connected to the control voltage and the power detector In the circuit, the output terminal of each of the low-dropout linear regulators is connected to the bias terminal and/or the collector terminal of the power amplifier circuit.
- each of the low dropout linear regulators includes a fifth resistor, a sixth resistor, an operational amplifier, a PMOS transistor, and a seventh resistor, and the fifth resistor and the sixth resistor are connected to the third resistor.
- the non-inverting input terminal of the operational amplifier is connected to the common node between the fifth resistor and the sixth resistor, and the inverting input terminal of the operational amplifier is connected to an external baseband circuit, so
- the output terminal of the operational amplifier is connected to the gate of the PMOS transistor, the source of the PMOS transistor is connected to a power source, and the drain of the PMOS transistor is connected to the ground through the seventh resistor.
- the power amplifying circuit includes one or more stages of amplifying circuits and a bias circuit corresponding to each stage of amplifying circuit, and each stage of amplifying circuit is connected to the corresponding bias circuit.
- a certain node on the main signal path includes any one-stage amplifying circuit, a first node and a second node of the power amplifying circuit.
- an integrated circuit chip is provided, and the integrated circuit chip includes the above-mentioned radio frequency power amplifier.
- a communication terminal is provided, and the communication terminal includes the above-mentioned radio frequency power amplifier.
- the radio frequency power amplifier provided by the embodiment of the present invention detects the output power on the main signal path through the power detection circuit, and obtains an equivalent voltage proportional to the output power and inputs it to the bias comparison circuit, and adjusts the equivalent voltage through the bias comparison circuit The value is compared with the control voltage to provide the bias voltage and/or collector voltage for the power amplifier circuit, thus forming a closed loop, so that the RF power amplifier can maintain stable gain and output power at different power levels status.
- FIG. 1 is a circuit block diagram of a radio frequency power amplifier provided by an embodiment of the present invention
- Figure 2 is a circuit block diagram of a radio frequency power amplifier using a power detection circuit composed of an envelope detector and a coupler;
- FIG. 3 is a schematic circuit diagram of the envelope detector in the radio frequency power amplifier provided by the embodiment of the present invention.
- FIG. 5 is a schematic circuit diagram of a bias comparison circuit in the radio frequency power amplifier provided by an embodiment of the present invention.
- Figure 6 is a schematic diagram 1 of the radio frequency power amplifier using a two-stage amplifying circuit
- Fig. 7 is a schematic diagram 2 of the radio frequency power amplifier adopting a two-stage amplifying circuit
- FIG. 8 is a diagram of the relationship between the collector voltage of the power amplifier circuit and the output power in the radio frequency power amplifier provided by an embodiment of the present invention.
- Fig. 9 is a structural block diagram of a communication terminal according to an embodiment of the present invention.
- the radio frequency power amplifier provided by the embodiment of the present invention includes a power amplifier circuit 5, an output matching circuit 2, a power detection circuit 3, and a bias comparison circuit 4; a power amplifier circuit 5, an output matching circuit 2 and an output load 9.
- the input end of the power detection circuit 3 is connected to a node on the main signal path (as shown in Figure 1
- the first node 7 between the power amplifier circuit 5 and the output matching circuit 2 and the second node 8) between the output matching circuit 2 and the output load 9 shown are connected, and the output terminal of the power detection circuit 3 is connected to the bias comparison circuit
- the input terminal of 4 is connected, and the output terminal of the bias comparison circuit 4 is connected with the bias terminal and/or the collector terminal of the power amplifier circuit 5.
- the power on the main signal path is detected by the power detection circuit 3, and an equivalent voltage proportional to the power of the main signal path is obtained.
- the equivalent voltage is input to the bias comparison circuit 4, according to the different bias terminals of the power amplifier circuit 5 Different offset states are needed to adjust the value of the equivalent voltage to obtain one or more branch equivalent voltages; the equivalent voltage of each branch is compared with the control voltage 1 pre-input to the bias comparison circuit 4 of the external baseband circuit , Continue to generate the bias voltage 6 and/or the collector voltage for the power amplifier circuit 5 and the control voltage, the branch equivalent voltage voltage difference is reversed, until the generated bias voltage and/or the collector voltage make the corresponding The branch equivalent voltage of is equal to the control voltage, so that the control voltage corresponds to the output power level of the radio frequency power amplifier, so as to control the output power of the radio frequency power amplifier under different power levels to stabilize.
- control voltage pre-input to the bias comparison circuit 4 by the external baseband circuit corresponds to the output power level of the radio frequency power amplifier, that is, one output power level corresponds to one control voltage.
- a plurality of control voltages corresponding to the output power level of the radio frequency power amplifier are preset in the baseband circuit.
- the value of the control voltage provided by the baseband circuit for the radio frequency power amplifier is determined according to the actual output power required by the communication terminal (such as a mobile phone) to interact with the base station. That is, by setting different control voltages, the RF power amplifier can obtain different output powers. For example, suppose that the mobile phone communicates with the base station.
- the mobile phone If the mobile phone is closer to the base station, the output power required for information exchange between the mobile phone and the base station will be relatively small, and the base station will feed back the output power required for information exchange with the mobile phone.
- the mobile phone For the mobile phone, the mobile phone will provide its RF power amplifier with a control voltage corresponding to the required output power level through the baseband circuit.
- the power detection circuit 3 includes a coupler 31 and an envelope detector 30.
- the input end of the coupler 31 is connected to the output end of the power amplifier circuit 5 through the output matching circuit 2, the through output end 8 of the coupler 31 is connected to the output load 9, and the coupling output end 32 of the coupler 31 is connected to the envelope detector 30
- the input terminal is connected, and the output terminal of the envelope detector 30 is connected to the input terminal of the bias comparison circuit 4.
- the coupler 31 is used to detect the output power at a certain position on the main signal path of the radio frequency power amplifier composed of the power amplifier circuit 5, the output matching circuit 2 and the output load 9 and generate coupling power.
- the coupling power has a certain proportional relationship with the output power of the radio frequency power amplifier. For example, the output power of a certain position on the main signal path of the radio frequency power amplifier detected by the coupler 31 and the coupling power generated is one hundredth of the output power of the radio frequency power amplifier.
- the coupling coefficient of the coupler 31 is generally greater than 20 dB, so that the output power of the power amplifier circuit 5 can be reduced while detecting the output power of a certain position on the main signal path.
- a capacitor can be used instead of a coupler to detect the output power of a certain position on the main signal path of the radio frequency power amplifier.
- the envelope detector 30 is used for receiving the coupling power output from the coupling output end 32 of the coupler 31 and obtaining an equivalent voltage 33 proportional to the coupling power.
- the envelope detector 30 includes a first resistor 307, a second resistor 308, a third resistor 310, a first diode 302, a fourth resistor 304, and a first capacitor 305;
- the two resistors 308 are connected between the power supply and the ground to provide a bias voltage for the first diode 302 through a voltage divider.
- the third resistor 310 is connected to the anode 301 of the first diode 302 and the first resistor 307 and the second resistor 307.
- the common node 309 of the resistor 308 is used to provide an appropriate bias current for the first diode 302.
- the cathode 303 of the first diode 302 is connected to the ground through the parallel network of the fourth resistor 304 and the first capacitor 305.
- the fourth resistor 304 serves as the load of the first diode 302, provides a DC state for the first diode 302, and at the same time provides the first diode 302 with a power-to-voltage conversion gain;
- the first capacitor 305 serves as a first diode
- the filter capacitor of the tube 302 is used to obtain the DC part of the output voltage of the first diode 302;
- the coupling power output by the coupler 31 can be converted into an equivalent voltage with a preset swing through the fourth resistor 304 and the first capacitor 305 ,
- the equivalent voltage is proportional to the coupling power.
- the coupling power output by the coupler 31 is input to the anode 301 of the first diode 302 through the capacitor 306.
- the envelope detector 30 converts the coupling power output by the coupler 31 into an equivalent voltage with a preset swing
- the common node 303 between the fourth resistor 304 and the first capacitor 305 is used as the output of the envelope detector 30
- the terminal is input to the bias comparison circuit 4.
- the bias comparison circuit 4 As shown in Figure 4, when the input power at the anode 301 of the first diode 302 (the coupling power output by the coupler 31) changes from -15 dBm to 10 dBm, the DC at the cathode 303 of the first diode 302
- the voltage (the equivalent voltage of the preset swing corresponding to the coupled power) changes from 0.3V to 1.35V.
- the bias comparison circuit 4 includes N low-dropout linear regulators, where N is a positive integer, and the value of N is determined by the bias actually required by the power amplifier circuit 5. The number of voltages and collector voltages is determined.
- Each low dropout linear regulator includes a fifth resistor 402, a sixth resistor 403, an operational amplifier 406, a PMOS transistor 408, and a seventh resistor 411, respectively.
- connection relationship and working principle of each part of each low-dropout linear regulator are as follows:
- the fifth resistor 402 and the sixth resistor 403 are connected between the third node 401 and the ground, and are used to pass
- the voltage dividing function of the fifth resistor 402 and the sixth resistor 403 replicates the equivalent voltage output by the power detection circuit 3 in a specific proportion to obtain a branch equivalent voltage;
- the non-inverting input terminal of the operational amplifier 406 and the fifth resistor 402 are
- the common node 404 between the sixth resistor 403 is connected to receive the branch equivalent voltage obtained by the voltage division of the fifth resistor 402 and the sixth resistor 403 through the common node 404;
- the inverting input terminal of the operational amplifier 406 is connected to an external
- the baseband circuit is used to receive the control voltage corresponding to the output power level actually required by the RF power amplifier;
- the output terminal of the operational amplifier 406 is connected to the gate of the PMOS transistor 408, the source 409 of the PMOS transistor 4
- the working principle of the bias comparison circuit 4 is that the equivalent voltage 33 output by the power detection circuit 3 which is proportional to the detected output power is input to the operational amplifier 406 of each low-dropout linear regulator, and each low-dropout linear regulator According to the working state of the power amplifier circuit 5, the voltage stabilizer copies the equivalent voltage output by the power detection circuit 3 to a specific ratio through the voltage dividing action of the fifth resistor 402 and the sixth resistor 403 to obtain a branch equivalent voltage; After the amplifier 406 compares the branch equivalent voltage with the control voltage 1 previously input to the inverting input terminal of the operational amplifier 406, the drain 410 of the PMOS transistor 408 generates a voltage through the seventh resistor 411 to provide the power amplifier circuit 5 with a bias voltage and /Or collector voltage. Among them, the value of the seventh resistor 411 can be different values according to needs.
- each low-dropout linear regulator can refer to the working state of the power amplifying circuit 5.
- the working state of a certain stage of the amplifying circuit of the amplifying circuit 5; that is, each low-dropout linear regulator is divided by the fifth resistor 402 and the sixth resistor 403 according to the working state of a certain stage of the power amplifying circuit 5 Function Copy the equivalent voltage output by the power detection circuit 3 to a specific ratio to obtain a branch equivalent voltage; that is, each low-dropout linear regulator can provide a bias for the corresponding amplifying circuit in the power amplifier circuit 5.
- multiple low-dropout linear regulators can provide the bias voltage and/or the collector voltage for the corresponding multi-stage amplifying circuit in the power amplifying circuit 5.
- each low-dropout linear regulator Since each low-dropout linear regulator forms a closed-loop control with the power amplifier circuit 5, the output matching circuit 2, and the power detection circuit 3, each low-dropout linear regulator will continue to receive the output of the power detection circuit 3
- the low dropout linear regulator will dynamically adjust the equivalent voltage received each time to obtain the branch equivalent voltage. After comparing the branch equivalent voltage with the control voltage, it is the corresponding value in the power amplifier circuit 5.
- a certain stage of amplifying circuit provides bias voltage and/or collector voltage until the equivalent voltage of the corresponding branch of each low dropout linear regulator is equal to the control voltage, so that the control voltage is equal to the output power level of the RF power amplifier Correspondingly, to control the output power stability of the RF power amplifier at different power levels.
- the output matching circuit 2 is used to achieve impedance matching with an external antenna, so that the power amplifier circuit 5 can input radio frequency signals to the antenna, and transmit the radio frequency signals to the base station through the antenna.
- the output matching circuit 2 includes a series inductor and a parallel capacitor, that is, the inductor is connected before the first node 7 and the second node 8, and the capacitor is connected between the second node 8 and the ground.
- the following takes the power amplifier circuit 5 using a two-stage amplifier circuit and a bias circuit corresponding to the two-stage amplifier circuit as an example, and detects the output power of the second node 8 to provide a collector for a certain stage of the power amplifier circuit 5 Voltage, or separately providing bias voltage and collector voltage for each stage of amplifying circuit are typical.
- the working principle of the radio frequency power amplifier provided by the embodiment of the present invention and the structure of each stage of amplifying circuit and the corresponding bias circuit will be described.
- the first stage amplifying circuit of the power amplifying circuit 5 includes a first triode 502, the collector of the first triode 502 is connected to one end of the first inductor 509, and the first inductor 509 serves as the first stage.
- the other end of the first inductor 509 is connected to the ground through the second capacitor 510, and the second capacitor 510 serves as a bypass capacitor of the first-stage amplifying circuit, so that the common terminal 511 of the first inductor 509 and the second capacitor 510 can be regarded as an AC Ground.
- One end of the eighth resistor 505 and the collector of the second triode 504 are connected to the node 508, the other end of the eighth resistor 505 is connected to the base of the second triode 504, and the other end of the eighth resistor 505 also passes through The second diode 506 and the third diode 507 are connected to the ground.
- the emitter of the second triode 504 is connected to the base of the first triode 502 through a ninth resistor 503 to provide a bias current for the first triode 502.
- the eighth resistor 505, the second triode 504, the second diode 506, the third diode 507 and the ninth resistor 503 form a bias circuit corresponding to the first-stage amplifying circuit.
- the collector of the first transistor 502 is connected to the base of the third transistor 513 through the third capacitor 512.
- the first-stage amplifying circuit receives the radio frequency signal through the capacitor 501, and inputs the radio frequency signal to the third capacitor 512.
- the second stage amplifying circuit receives the radio frequency signal through the capacitor 501, and inputs the radio frequency signal to the third capacitor 512.
- the second stage amplifying circuit receives the radio frequency signal through the capacitor 501, and inputs the radio frequency signal to the third capacitor 512.
- the second stage amplifying circuit receives the radio frequency signal through the capacitor 501, and inputs the radio frequency signal to the third capacitor 512.
- the second stage amplifying circuit receives the radio frequency signal through the capacitor 501, and inputs the radio frequency signal to the third capacitor 512.
- the second stage amplifying circuit receives the radio frequency signal through the capacitor 501, and inputs the radio frequency signal to the third capacitor 512.
- the second stage amplifying circuit receives the radio frequency signal through the
- One end of the tenth resistor 516 and the collector of the fourth triode 515 are connected to the node 519, and the other end of the tenth resistor 516 is connected to the base of the fourth triode 515, and through the fourth diode 517, the Five diodes 518 are connected to ground.
- the emitter of the fourth transistor 51 is connected to the base of the third transistor 513 through the eleventh resistor 514 to provide a bias current for the third transistor 513.
- the collector of the third transistor 513 is output to the output load through the output matching circuit 2.
- the power detection circuit 3 detects the output power of the second node 8 and obtains an equivalent voltage 526 proportional to the output power.
- the equivalent voltage 526 is input to the bias comparison circuit 4, and the bias comparison circuit 4 obtains the equivalent voltage
- the offset voltage 529 is obtained by comparing 526 with the control voltage 1 input to the offset comparison circuit 4 in advance.
- the bias voltage 529 is connected to the common node 522 between the second inductor 520 and the fourth capacitor 521 to provide a collector voltage for the second stage amplifying circuit.
- the output power of the power amplifier circuit is controlled by the collector voltage.
- the output power of the second node 8 is detected by the power detection circuit 3, and an equivalent voltage 526 proportional to the output power is obtained, and the equivalent voltage 526 is input to the four bias comparison circuits 4 respectively.
- the low-dropout linear regulator two of the low-dropout linear regulators adjust the value of the equivalent voltage according to the working state of the first-stage amplifying circuit of the power amplifier circuit 5 to obtain the equivalent voltages of the two branches.
- the differential linear regulator compares the corresponding branch equivalent voltage with the control voltage, and continuously generates the corresponding bias voltage 534 and collector voltage 533 for the first-stage amplifying circuit through node 508 and node 511 until the generated The bias voltage and the collector voltage make the corresponding branch equivalent voltage equal to the control voltage; the other two low-dropout linear regulators adjust the equivalent voltage value according to the working state of the second-stage amplifier circuit of the power amplifier circuit 5, and also The two branch equivalent voltages are obtained.
- the two low dropout linear regulators respectively compare the corresponding branch equivalent voltages with the control voltages, and continuously generate corresponding biases for the second-stage amplifying circuit through nodes 519 and 522.
- the voltage 532 and the collector voltage 531 are set until the generated bias voltage and collector voltage make the corresponding branch equivalent voltage equal to the control voltage.
- the radio frequency power amplifier provided by the embodiment of the present invention detects the output power on the main signal path through the power detection circuit, and obtains an equivalent voltage proportional to the output power and inputs it to the bias comparison circuit, and adjusts the equivalent voltage through the bias comparison circuit The value is compared with the control voltage to provide a bias voltage and/or collector voltage for the power amplifier circuit to form a closed loop to achieve the purpose of stably controlling the output power of the power amplifier circuit.
- detecting the output power on the main signal path adjusting the working status of each level of the amplifier circuit, thereby suppressing the change in the working state of the RF power amplifier caused by process changes, and reducing the impact of the change in input power on the working state of the RF power amplifier. Influence, make the RF power amplifier work in gain and output power can maintain a stable state under different power levels.
- the radio frequency power amplifier provided by the embodiment of the present invention can also be used in an integrated circuit chip.
- the specific structure of the radio frequency power amplifier in the integrated circuit chip will not be detailed here.
- the above-mentioned radio frequency power amplifier can also be used in the communication terminal as shown in FIG. 9 as an important part of the communication component.
- the communication terminal mentioned here refers to the computer equipment that can be used in a mobile environment and supports multiple communication standards such as GSM, EDGE, WiFi, 4G/5G, etc., including mobile phones, notebook computers, tablet computers, car computers, etc.
- the technical solutions provided by the embodiments of the present invention are also applicable to other communication component applications, such as communication base stations.
- Fig. 9 is a structural block diagram of a communication terminal according to an embodiment of the present invention.
- the communication terminal 800 may include one or more of the following components: a processing component 802, a memory 804, a power supply component 806, an input/output (I/O) interface 812, a sensor component 814, and a communication component 816.
- a processing component 802 a memory 804
- a power supply component 806 an input/output (I/O) interface 812
- sensor component 814 a sensor component 814
- a communication component 816 may include one or more of the following components: a processing component 802, a memory 804, a power supply component 806, an input/output (I/O) interface 812, a sensor component 814, and a communication component 816.
- I/O input/output
- the processing component 802 generally controls the overall operation of the communication terminal 800.
- the processing component 802 may include one or more processors 820 to execute instructions to complete all or part of the steps of the foregoing method.
- the processing component 802 may include one or more modules to facilitate the interaction between the processing component 802 and other components.
- the memory 804 is configured to store various types of data to support operations in the communication terminal 800. Examples of these data include instructions for any application or method operating on the communication terminal 800, and the like.
- the memory 804 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable and Programmable read only memory (EPROM), programmable read only memory (PROM), read only memory (ROM), magnetic memory, flash memory, magnetic or optical disk.
- SRAM static random access memory
- EEPROM electrically erasable programmable read-only memory
- EPROM erasable and Programmable read only memory
- PROM programmable read only memory
- ROM read only memory
- magnetic memory flash memory
- flash memory magnetic or optical disk.
- the power supply component 806 provides power for various components of the communication terminal 800.
- the power supply component 806 may include a power management system, one or more power supplies, and other components associated with generating, managing, and distributing power for the communication terminal 800.
- the I/O interface 812 provides an interface between the processing component 802 and a peripheral interface module.
- the above-mentioned peripheral interface module may be a keyboard, a scroll wheel, a button, and the like.
- the sensor component 814 includes one or more sensors for providing the communication terminal 800 with various status assessments.
- the sensor component 814 may include an acceleration sensor, a gyroscope sensor, a magnetic sensor, a pressure sensor, or a temperature sensor.
- the communication component 816 is configured to facilitate wired or wireless communication between the communication terminal 800 and other devices, and is preferably a 4G/5G access module.
- the communication terminal 800 can access wireless networks based on various communication standards, such as GSM, EDGE, WiFi, 4G/5G, or a combination thereof.
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
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- Transmitters (AREA)
Abstract
Description
Claims (10)
- 一种射频功率放大器,其特征在于包括功率放大电路、输出匹配电路、功率检测电路和偏置比较电路;所述功率放大电路和所述输出匹配电路连接,所述功率检测电路的输入端与所述主信号通路上的节点连接,所述功率检测电路的输出端与所述偏置比较电路的输入端连接,所述偏置比较电路的输出端与所述功率放大电路的偏置端和/或集电极端连接;通过所述功率检测电路检测所述主信号通路上的输出功率,并得到与所述输出功率成正比的等效电压,所述等效电压输入到所述偏置比较电路后,根据所述功率放大电路不同偏置端所需要的不同的偏置状态调整所述等效电压的数值,得到一个或多个分支等效电压;每个所述分支等效电压分别与预先输入到所述偏置比较电路的控制电压进行比较,持续为所述功率放大电路提供偏置电压和/或集电极电压,直到所述控制电压与所述射频功率放大器的输出功率等级相对应。
- 如权利要求1所述的射频功率放大器,其特征在于:所述功率检测电路包括耦合器和包络检波器,所述耦合器的输入端通过所述输出匹配电路与所述功率放大电路的输出端连接,所述耦合器的直通输出端与输出负载连接,所述耦合器的耦合输出端与所述包络检波器的输入端连接,所述包络检波器的输出端与偏置比较电路的输入端连接。
- 如权利要求2所述的射频功率放大器,其特征在于:采用电容替代所述耦合器。
- 如权利要求2所述的射频功率放大器,其特征在于:所述包络检波器包括第一电阻、第二电阻、第三电阻、第一二极管、第四电阻和第一电容;所述第一电阻与所述第二电阻连接在电源与地之间,所述第三电阻连接在所述第一二极管的正极与所述第一电阻和所述第二电阻的公共节点之间,所述第一二极管的负极通过所述第四电阻与所述第一电容的并联网络连接到地。
- 如权利要求1所述的射频功率放大器,其特征在于:所述偏置比较电路包括N个低压差线性稳压器,N为正整数;每个所述低压差线性稳压器的输入端分别连接所述控制电压和所述功率检测电路,每个所述低压差线性稳压器的输出端连接所述功率放大电路的偏置端和/或集电极端。
- 如权利要求1所述的射频功率放大器,其特征在于:每个所述低压差线性稳压器分别包括第五电阻、第六电阻、运算放大器、PMOS晶体管和第七电阻,所述第五电阻与所述第六电阻连接在第三节点与地之间,所述运算放大器的正相输入端和所述第五电阻与所述第六电阻之间的公共节点连接,所述运算放大器的反相输入端连接外部的基带电路,所述运算放大器的输出端连接所述PMOS晶体管的栅极,所述PMOS晶体管的源极连接到电源,所述PMOS晶体管的漏极通过所述第七电阻连接到地。
- 如权利要求1所述的射频功率放大器,其特征在于:所述功率放大电路包括一级或多级放大电路及与每一级放大电路对应的偏置电路,每一级放大电路与对应的所述偏置电路连接。
- 如权利要求7所述的射频功率放大器,其特征在于:所述主信号通路上的某一节点包括所述功率放大电路的任意一级放大电路、第一节点和第二节点。
- 一种集成电路芯片,其特征在于所述集成电路芯片中包括权利要求1~8中任意一项所述的射频功率放大器。
- 一种通信终端,其特征在于所述通信终端中包括权利要求1~8中任意一项所述的射频功率放大器。
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JP2022527830A JP2023507245A (ja) | 2019-11-15 | 2020-11-12 | Rf電力増幅器、チップ及び通信端末 |
KR1020227020399A KR20220101164A (ko) | 2019-11-15 | 2020-11-12 | 무선 주파수 전력 증폭기, 칩 및 통신 단말 |
EP20886218.5A EP4060896A4 (en) | 2019-11-15 | 2020-11-12 | RADIO FREQUENCY POWER AMPLIFIER, CHIP AND COMMUNICATION TERMINAL |
US17/663,429 US20220278659A1 (en) | 2019-11-15 | 2022-05-14 | Radio frequency power amplifier, chip, and communication terminal |
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CN201911121417.2 | 2019-11-15 | ||
CN201911121417.2A CN110855254B (zh) | 2019-11-15 | 2019-11-15 | 一种射频功率放大器、芯片及通信终端 |
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US17/663,429 Continuation US20220278659A1 (en) | 2019-11-15 | 2022-05-14 | Radio frequency power amplifier, chip, and communication terminal |
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EP (1) | EP4060896A4 (zh) |
JP (1) | JP2023507245A (zh) |
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CN110855254B (zh) * | 2019-11-15 | 2023-06-20 | 唯捷创芯(天津)电子技术股份有限公司 | 一种射频功率放大器、芯片及通信终端 |
CN111711423B (zh) * | 2020-06-03 | 2024-02-02 | 唯捷创芯(天津)电子技术股份有限公司 | 射频功率放大器、射频前端模块及通信终端 |
CN113835053A (zh) * | 2020-06-23 | 2021-12-24 | 通用电气精准医疗有限责任公司 | 射频功率放大器的功率控制装置和mri***的射频发射*** |
CN112702029B (zh) * | 2021-03-25 | 2021-05-28 | 成都知融科技股份有限公司 | 片上集成检波功能的cmos功率放大器芯片 |
CN114152803A (zh) * | 2021-10-12 | 2022-03-08 | 广州润芯信息技术有限公司 | 高阻微带线结构的功率检测电路 |
CN116526981B (zh) * | 2023-04-20 | 2024-02-20 | 唯捷创芯(天津)电子技术股份有限公司 | 一种可调平衡式功率放大器及射频前端模块、电子设备 |
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- 2020-11-12 EP EP20886218.5A patent/EP4060896A4/en active Pending
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EP4060896A4 (en) | 2023-01-11 |
CN110855254B (zh) | 2023-06-20 |
CN110855254A (zh) | 2020-02-28 |
KR20220101164A (ko) | 2022-07-19 |
US20220278659A1 (en) | 2022-09-01 |
JP2023507245A (ja) | 2023-02-22 |
EP4060896A1 (en) | 2022-09-21 |
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