WO2021056472A1 - Multi-quantum-well structure, photoelectric device epitaxial wafer and photoelectric device - Google Patents

Multi-quantum-well structure, photoelectric device epitaxial wafer and photoelectric device Download PDF

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WO2021056472A1
WO2021056472A1 PCT/CN2019/108734 CN2019108734W WO2021056472A1 WO 2021056472 A1 WO2021056472 A1 WO 2021056472A1 CN 2019108734 W CN2019108734 W CN 2019108734W WO 2021056472 A1 WO2021056472 A1 WO 2021056472A1
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quantum
quantum well
layer
well structure
barrier layer
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PCT/CN2019/108734
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French (fr)
Chinese (zh)
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孙海定
余华斌
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中国科学技术大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • the present disclosure relates to the field of semiconductor technology, in particular to a multi-quantum well structure, an optoelectronic device epitaxial wafer, and an optoelectronic device.
  • AlGaN Aluminum gallium nitride-based DUV_LED and laser have the characteristics of wide forbidden band width, direct band gap, and continuous adjustment of the emission wavelength in the range of 200nm to 360nm, and can be large on cheap silicon or sapphire substrates by heteroepitaxial
  • AlGaN semiconductor materials have become the mainstream materials for preparing DUV_LEDs and lasers.
  • the use of AlGaN can realize an ultraviolet detector (Ultraviolet Detector).
  • DUV_LEDs, lasers, and detectors are usually mainly composed of an electron injection layer, a multiple quantum well active region, an electron blocking layer, and a hole injection layer.
  • a large number of electrons accumulate at the interface between the last quantum barrier layer and the electron blocking layer in the multi-quantum well structure, causing many electrons to be unable to participate in the light emission, which makes the DUV_LED's internal quantum efficiency, external quantum efficiency and luminous efficiency very good Low, laser energy is low, and detector detection efficiency is low.
  • the present disclosure provides a multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device to solve the above technical problems.
  • the present disclosure provides a multiple quantum well structure, which is composed of alternately grown first quantum barrier layers and first quantum well layers, wherein, in the multiple quantum well structure, the last layer along its growth direction is the second A quantum well layer.
  • a second quantum barrier layer is grown on the last layer of the first quantum well layer, and the second quantum barrier layer and the first quantum barrier layer have a different composition or a different composition content.
  • the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly decreases to the first preset value along the growth direction.
  • the first preset value is the Al composition content of the first quantum well layer.
  • the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly increases along the growth direction to a second preset value.
  • the first quantum barrier layer is Al a Ga 1-a N quantum barrier
  • the second quantum barrier layer is B m Al n Ga 1-mn N quantum barrier or In m Al n Ga 1-mn
  • One of the N quantum barriers 0 ⁇ a ⁇ 1, 0 ⁇ m ⁇ 1, 0 ⁇ n ⁇ 1.
  • the last layer of the first quantum well layer is one of B x Al y Ga 1-xy N quantum wells or In x Al y Ga 1-xy N quantum wells, and the last layer is the first quantum well layer.
  • the other first quantum well layers other than the quantum well layer are Al b Ga 1-b N quantum wells, 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ b ⁇ 1.
  • the present disclosure also provides an optoelectronic device epitaxial wafer, which includes the above-mentioned multiple quantum well structure.
  • the optoelectronic device epitaxial wafer further includes an electron blocking layer, the electron blocking layer is epitaxially grown on the multiple quantum well structure, and the second preset value in the multiple quantum well structure is the electron blocking layer The Al content of the layer.
  • the present disclosure also provides a photoelectric device, including the above-mentioned photoelectric device epitaxial wafer.
  • the multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device provided by the present disclosure have the following beneficial effects:
  • the effective electron barrier height of the electron barrier layer is increased, the barrier ability of the electron barrier layer against electrons is enhanced, and electrons are effectively prevented from overflowing from the active area.
  • And greatly increase the electron concentration in the last quantum well thereby improving the internal quantum efficiency, external quantum efficiency and light output power of the optoelectronic device, thereby realizing the preparation of high-power optoelectronic devices, and reducing costs and materials;
  • the internal quantum efficiency, external quantum efficiency and light output power of the formed optoelectronic device can also be improved, thereby realizing high-power optoelectronics Device preparation.
  • FIG. 1 schematically shows a structure diagram of a multiple quantum well structure provided by an embodiment of the present disclosure
  • FIG. 2 schematically shows a structure diagram of a multiple quantum well structure provided by another embodiment of the present disclosure
  • FIG. 3A schematically shows a schematic diagram of a change in the content of Al composition in the second quantum barrier layer in the multiple quantum well structure shown in FIG. 2;
  • FIG. 3B schematically shows another schematic diagram of the Al composition content in the second quantum barrier layer in the multiple quantum well structure shown in FIG. 2;
  • FIG. 4 schematically shows a structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure
  • Fig. 5A schematically shows a distribution diagram of Al composition in an epitaxial wafer of an existing optoelectronic device
  • FIG. 5B schematically shows a distribution diagram of Al composition in an epitaxial wafer of an optoelectronic device provided by an embodiment of the present disclosure
  • FIG. 6A schematically shows a comparison diagram of the luminous power of an existing optoelectronic device and the optoelectronic device provided by an embodiment of the present disclosure
  • FIG. 6B schematically shows a comparison diagram of the external quantum efficiency of an existing optoelectronic device and the optoelectronic device provided by an embodiment of the present disclosure.
  • Fig. 1 schematically shows a structural diagram of a multiple quantum well structure provided by an embodiment of the present disclosure. Referring to FIG. 1, the multiple quantum well structure of the present disclosure will be described in detail.
  • the multiple quantum well structure is composed of alternately grown first quantum barrier layers and first quantum well layers.
  • the last layer along its growth direction is the first quantum well layer.
  • the electron barrier layer is directly grown on the last first quantum well layer in the embodiment of the present disclosure, which can avoid a large number of electrons accumulating the quantum barrier layer and the electron barrier layer. The problem that the interface of the layer cannot participate in the luminescence.
  • the first quantum well layer grown on the last layer is one of B x Al y Ga 1-xy N quantum wells or In x Al y Ga 1-xy N quantum wells, except for The other first quantum well layer is Al b Ga 1-b N quantum well, 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ b ⁇ 1.
  • FIG. 2 schematically shows a structural diagram of a multiple quantum well structure provided by another embodiment of the present disclosure. Referring to FIG. 2, in conjunction with FIGS. 3A and 3B, another multiple quantum well structure of the present disclosure will be described in detail.
  • the multiple quantum well structure is composed of alternately grown first quantum barrier layers and first quantum well layers.
  • the last layer along its growth direction is the first quantum well layer.
  • the last A second quantum barrier layer is also grown on the first quantum well layer, the composition of the second quantum barrier layer is different from that of the first quantum barrier layer, or the composition of the second quantum barrier layer is the same as that of the first quantum barrier layer But the component content is different.
  • the composition of the second quantum barrier layer is different from that of the first quantum barrier layer.
  • the first quantum barrier layer is Al a Ga 1-a N quantum barrier
  • the second quantum barrier layer is B m Al n Ga 1-mn N One of quantum barriers or In m Al n Ga 1-mn N quantum barriers, 0 ⁇ a ⁇ 1, 0 ⁇ m ⁇ 1, 0 ⁇ n ⁇ 1.
  • the second quantum barrier layer and the first quantum barrier layer have the same composition but different composition content. Specifically, they are divided into the following two cases:
  • the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly decreases to the first preset value along the growth direction.
  • the first preset value is the Al composition content of the first quantum well layer.
  • a represents the Al composition content in the first quantum barrier layer
  • b represents the Al composition content in the first quantum barrier layer
  • the first preset value is equal to b. It can be understood that, in the multiple quantum well structure, the Al composition content b in the first quantum well layer is less than the Al composition content a in the first quantum barrier layer.
  • the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly increases to the second preset value along the growth direction.
  • a in FIG. 3B represents the Al composition content of the first quantum barrier layer
  • k represents the Al composition content of the electron blocking layer grown on the second quantum barrier layer
  • the second preset value is equal to k , A ⁇ k.
  • the embodiment of the present disclosure also shows an epitaxial wafer of an optoelectronic device, including the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2.
  • the optoelectronic device epitaxial wafer may sequentially include the substrate 1, the electron injection layer 2, the multiple quantum well layer 3, the electron blocking layer 4, and the space from bottom to top.
  • the hole injection layer 5 and the multiple quantum well layer 3 are multiple quantum well structures provided by the embodiments of the disclosure.
  • the substrate is a sapphire substrate, a silicon substrate, a metal substrate, silicon carbide, gallium nitride, aluminum nitride, etc., and there is no restriction on the material of the substrate here.
  • the electron injection layer 2 is epitaxially grown on the substrate 1, the multiple quantum well layer 3 is epitaxially grown on the electron injection layer 2, the electron blocking layer 4 is grown on the multiple quantum well layer 3, and the hole injection layer 5 is grown on the electron blocking layer 4. on.
  • the structures of the substrate, the multiple quantum well layer, the electron blocking layer, and the hole injection layer of the existing light-emitting diode epitaxial wafer are all suitable for the substrate 1, the electron injection layer 2, the electron blocking layer 4, and the cavity in the embodiments of the present disclosure.
  • the light emitting diode epitaxial wafer in the embodiments of the present disclosure in addition to the multiple quantum well structure adopting the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2, other structures other than the multiple quantum well structure are the same as existing light emitting diodes.
  • the other structure of the epitaxial wafer is the same.
  • FIG. 5A schematically shows a distribution diagram of Al composition in an epitaxial wafer of an existing optoelectronic device
  • FIG. 5B schematically shows a distribution diagram of Al composition in an epitaxial wafer of a photovoltaic device provided by an embodiment of the present disclosure.
  • i, a, b, k, j respectively represent the content of Al component in the electron injection layer 2, the electron barrier layer, the quantum well layer, the electron blocking layer 4, and the hole injection layer 5, where 1>k>j>i> a>b, the number of quantum well layers and quantum barrier layers is between 1 and 10.
  • the optoelectronic device epitaxial wafer in the embodiments of the present disclosure removes the last quantum barrier layer in the multiple quantum well structure, and greatly improves the electron barrier layer.
  • the effective barrier height of electrons enhances the ability of the epitaxial wafer to block electrons, effectively inhibits the overflow of electrons from the active area, thereby improving the internal quantum efficiency, external quantum efficiency and light output rate of the formed optoelectronic device.
  • the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2 is also applicable to other optoelectronic device epitaxial wafers, such as light-emitting laser epitaxial wafers, light-emitting detector epitaxial wafers, and the like. Similar to the light emitting diode epitaxial wafer, in other optoelectronic device epitaxial wafers, except that the multiple quantum well structure adopts the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2, the other structures of the optoelectronic device epitaxial wafer are existing The structure will not be repeated in the embodiments of the present disclosure.
  • the embodiments of the present disclosure also show an optoelectronic device, including the optoelectronic device epitaxial wafer in the above embodiments.
  • the optoelectronic device is, for example, one of a light-emitting diode, a light-emitting laser, and a light-emitting detector.
  • the optoelectronic device epitaxial wafers in the above embodiments can be applied to optoelectronic devices, for example, electrodes are prepared on the light emitting diode epitaxial wafers to package and form light emitting diode chips.
  • FIG. 6A schematically shows a comparison diagram of the luminous efficiency of the existing optoelectronic device and the optoelectronic device provided by the embodiment of the present disclosure
  • FIG. 6B schematically shows the external quantum of the existing optoelectronic device and the optoelectronic device provided by the embodiment of the present disclosure.
  • Comparison diagram of efficiency the light-emitting diode (Light Emitting Diode, LED) without the last quantum barrier layer (LQB) in Figure 6A and Figure 6B refers to the LED formed after removing the LQB of the traditional LED structure, which is based on Figure 1.
  • the LED is formed with a multiple quantum well structure.
  • the optoelectronic device in the embodiments of the present disclosure removes the last quantum barrier layer in the multiple quantum well structure, which greatly improves the luminous power and external quantum efficiency of the optoelectronic device. .
  • the multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device of the present disclosure have been described in detail.
  • the composition of the quantum well, or the composition gradient or change of the last layer of the quantum barrier layer in the traditional multiple quantum well structure can effectively inhibit the overflow of electrons from the active region, and can reduce any of the above multiple quantum well structures.

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Abstract

A multi-quantum-well structure, a photoelectric device epitaxial wafer and a photoelectric device, wherein the multi-quantum-well structure is composed of first quantum barrier layers and first quantum well layers that grow alternately; and in the multi-quantum-well structure, the last layer along the growth direction is a first quantum well layer. Configuring the last layer of the multi-quantum-well structure to be a quantum well layer effectively suppresses electrons from overflowing from an active region, and applying the multi-quantum-well structure to the photoelectric device epitaxial wafer and the photoelectric device improves the internal quantum efficiency, the external quantum efficiency and the light output power of the photoelectric device, and realizes the preparation of a high-power photoelectric device.

Description

一种多量子阱结构、光电器件外延片及光电器件Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device 技术领域Technical field
本公开涉及半导体技术领域，具体地，涉及一种多量子阱结构、光电器件外延片及光电器件。The present disclosure relates to the field of semiconductor technology, in particular to a multi-quantum well structure, an optoelectronic device epitaxial wafer, and an optoelectronic device.
背景技术Background technique
随着人们对紫外光需求的日益增长，深紫外发光二极管(Deep Ultraviolet Light Emitting Diode，DUV_LED)和紫外激光器(Ultraviolet laser)发展迅速。铝镓氮(AlGaN)基DUV_LED、laser具有禁带宽度宽、直接带隙、发光波长在200nm到360nm范围内连续可调等特点，并且可以通过异质外延在廉价的硅或者蓝宝石衬底上大规模生产，AlGaN半导体材料已成为制备DUV_LED和laser的主流材料。同样，利用AlGaN可以实现紫外探测器(Ultraviolet detector)。With the increasing demand for ultraviolet light, deep ultraviolet light emitting diodes (Deep Ultraviolet Light Emitting Diode, DUV_LED) and ultraviolet lasers (Ultraviolet laser) have developed rapidly. Aluminum gallium nitride (AlGaN)-based DUV_LED and laser have the characteristics of wide forbidden band width, direct band gap, and continuous adjustment of the emission wavelength in the range of 200nm to 360nm, and can be large on cheap silicon or sapphire substrates by heteroepitaxial In large-scale production, AlGaN semiconductor materials have become the mainstream materials for preparing DUV_LEDs and lasers. Similarly, the use of AlGaN can realize an ultraviolet detector (Ultraviolet Detector).
传统DUV_LED、laser、detector通常主要由电子注入层、多量子阱有源区、电子阻挡层以及空穴注入层构成。器件工作过程中，大量电子积聚在多量子阱结构中最后一个量子垒层和电子阻挡层的界面处，导致很多电子无法参与发光，从而使得DUV_LED的内量子效率、外量子效率和发光效率都很低，laser能量较低，detector探测效率低。Traditional DUV_LEDs, lasers, and detectors are usually mainly composed of an electron injection layer, a multiple quantum well active region, an electron blocking layer, and a hole injection layer. During the working process of the device, a large number of electrons accumulate at the interface between the last quantum barrier layer and the electron blocking layer in the multi-quantum well structure, causing many electrons to be unable to participate in the light emission, which makes the DUV_LED's internal quantum efficiency, external quantum efficiency and luminous efficiency very good Low, laser energy is low, and detector detection efficiency is low.
发明内容Summary of the invention
(一)要解决的技术问题(1) Technical problems to be solved
本公开提供了一种多量子阱结构、光电器件外延片及光电器件，解决以上技术问题。The present disclosure provides a multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device to solve the above technical problems.
(二)技术方案(2) Technical solution
本公开提供了一种多量子阱结构，由交替生长的第一量子垒层和第一量子阱层组成，其中，所述多量子阱结构中，沿其生长方向的最后一 层为所述第一量子阱层。The present disclosure provides a multiple quantum well structure, which is composed of alternately grown first quantum barrier layers and first quantum well layers, wherein, in the multiple quantum well structure, the last layer along its growth direction is the second A quantum well layer.
可选地，所述最后一层第一量子阱层上生长有第二量子垒层，所述第二量子垒层与所述第一量子垒层的组分不同或组分含量不同。Optionally, a second quantum barrier layer is grown on the last layer of the first quantum well layer, and the second quantum barrier layer and the first quantum barrier layer have a different composition or a different composition content.
可选地，所述第一量子垒层的Al组分含量沿着生长方向固定不变，所述第二量子垒层的Al组分含量沿着其生长方向均匀递减至第一预设值。Optionally, the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly decreases to the first preset value along the growth direction.
可选地，所述第一预设值为所述第一量子阱层的Al组分含量。Optionally, the first preset value is the Al composition content of the first quantum well layer.
可选地，所述第一量子垒层的Al组分含量沿着生长方向固定不变，所述第二量子垒层的Al组分含量沿着其生长方向均匀递增至第二预设值。Optionally, the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly increases along the growth direction to a second preset value.
可选地，所述第一量子垒层为Al aGa 1-aN量子垒，所述第二量子垒层为B mAl nGa 1-m-nN量子垒或In mAl nGa 1-m-nN量子垒中的一种0＜a＜1，0＜m＜1，0≤n＜1。 Optionally, the first quantum barrier layer is Al a Ga 1-a N quantum barrier, and the second quantum barrier layer is B m Al n Ga 1-mn N quantum barrier or In m Al n Ga 1-mn One of the N quantum barriers, 0<a<1, 0<m<1, 0≦n<1.
可选地，所述最后一层第一量子阱层为B xAl yGa 1-x-yN量子阱或In xAl yGa 1-x-yN量子阱中的一种，所述最后一层第一量子阱层之外的其它第一量子阱层为Al bGa 1-bN量子阱，0＜x＜1，0≤y＜1，0＜b＜1。 Optionally, the last layer of the first quantum well layer is one of B x Al y Ga 1-xy N quantum wells or In x Al y Ga 1-xy N quantum wells, and the last layer is the first quantum well layer. The other first quantum well layers other than the quantum well layer are Al b Ga 1-b N quantum wells, 0<x<1, 0≦y<1, 0<b<1.
本公开还提供了一种光电器件外延片，包括上述多量子阱结构。The present disclosure also provides an optoelectronic device epitaxial wafer, which includes the above-mentioned multiple quantum well structure.
可选地，所述光电器件外延片还包括电子阻挡层，所述电子阻挡层外延生长在所述多量子阱结构上，所述多量子阱结构中的第二预设值为所述电子阻挡层的Al组分含量。Optionally, the optoelectronic device epitaxial wafer further includes an electron blocking layer, the electron blocking layer is epitaxially grown on the multiple quantum well structure, and the second preset value in the multiple quantum well structure is the electron blocking layer The Al content of the layer.
本公开还提供了一种光电器件，包括上述光电器件外延片。The present disclosure also provides a photoelectric device, including the above-mentioned photoelectric device epitaxial wafer.
(三)有益效果(3) Beneficial effects
本公开提供的多量子阱结构、光电器件外延片及光电器件，具有以下有益效果：The multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device provided by the present disclosure have the following beneficial effects:
(1)通过将多量子阱结构的最后一层设置为量子阱层，提高了电子阻挡层的电子有效势垒高度，增强了电子阻挡层对电子的阻挡能力，有效抑制电子从有源区溢出，并且极大地增加了最后一个量子阱内的电子浓度，从而提升光电器件的内量子效率、外量子效率和光输出功率，从而实现大功率光电器件的制备，并且缩减了成本和材料；(1) By setting the last layer of the multi-quantum well structure as a quantum well layer, the effective electron barrier height of the electron barrier layer is increased, the barrier ability of the electron barrier layer against electrons is enhanced, and electrons are effectively prevented from overflowing from the active area. , And greatly increase the electron concentration in the last quantum well, thereby improving the internal quantum efficiency, external quantum efficiency and light output power of the optoelectronic device, thereby realizing the preparation of high-power optoelectronic devices, and reducing costs and materials;
(2)通过改变最后一层量子阱层的组分，进一步提升了形成的光电器件的内量子效率、外量子效率和光输出功率，从而实现大功率光电器件的制备；(2) By changing the composition of the last quantum well layer, the internal quantum efficiency, external quantum efficiency and light output power of the formed optoelectronic device are further improved, so as to realize the preparation of high-power optoelectronic devices;
(3)通过将传统多量子阱结构中最后一层量子垒层进行组分渐变或改变组分，也可以提升形成的光电器件的内量子效率、外量子效率和光输出功率，从而实现大功率光电器件的制备。(3) By grading or changing the composition of the last quantum barrier layer in the traditional multiple quantum well structure, the internal quantum efficiency, external quantum efficiency and light output power of the formed optoelectronic device can also be improved, thereby realizing high-power optoelectronics Device preparation.
附图说明Description of the drawings
图1示意性示出了本公开一实施例提供的多量子阱结构的结构示意图；FIG. 1 schematically shows a structure diagram of a multiple quantum well structure provided by an embodiment of the present disclosure;
图2示意性示出了本公开另一实施例提供的多量子阱结构的结构示意图；FIG. 2 schematically shows a structure diagram of a multiple quantum well structure provided by another embodiment of the present disclosure;
图3A示意性示出了图2所示多量子阱结构中第二量子垒层中Al组分含量的一变化示意图；3A schematically shows a schematic diagram of a change in the content of Al composition in the second quantum barrier layer in the multiple quantum well structure shown in FIG. 2;
图3B示意性示出了图2所示多量子阱结构中第二量子垒层中Al组分含量的另一变化示意图；FIG. 3B schematically shows another schematic diagram of the Al composition content in the second quantum barrier layer in the multiple quantum well structure shown in FIG. 2;
图4示意性示出了本公开一实施例提供的发光二极管外延片的结构示意图；FIG. 4 schematically shows a structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure;
图5A示意性示出了现有光电器件外延片中Al组分分布图；Fig. 5A schematically shows a distribution diagram of Al composition in an epitaxial wafer of an existing optoelectronic device;
图5B示意性示出了本公开实施例提供的光电器件外延片中Al组分分布图；FIG. 5B schematically shows a distribution diagram of Al composition in an epitaxial wafer of an optoelectronic device provided by an embodiment of the present disclosure;
图6A示意性示出了现有光电器件与本公开实施例提供的光电器件的发光功率的比较示意图；FIG. 6A schematically shows a comparison diagram of the luminous power of an existing optoelectronic device and the optoelectronic device provided by an embodiment of the present disclosure;
图6B示意性示出了现有光电器件与本公开实施例提供的光电器件的外量子效率的比较示意图。FIG. 6B schematically shows a comparison diagram of the external quantum efficiency of an existing optoelectronic device and the optoelectronic device provided by an embodiment of the present disclosure.
附图标记说明：Description of reference signs:
1-衬底；1- Substrate;
2-电子注入层；2- Electron injection layer;
3-多量子阱层；3-Multiple quantum well layer;
4-电子阻挡层；4-electron blocking layer;
5-空穴注入层。5- Hole injection layer.
具体实施方式detailed description
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开进一步详细说明。In order to make the objectives, technical solutions, and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
图1示意性示出了本公开一实施例提供的多量子阱结构的结构示意图。参阅图1，对本公开多量子阱结构进行详细说明。Fig. 1 schematically shows a structural diagram of a multiple quantum well structure provided by an embodiment of the present disclosure. Referring to FIG. 1, the multiple quantum well structure of the present disclosure will be described in detail.
多量子阱结构由交替生长的第一量子垒层和第一量子阱层组成，该多量子阱结构中，沿着其生长方向的最后一层为第一量子阱层。与传统方法中多量子阱结构的最后一层为量子垒层相比，本公开实施例中直接在最后一个第一量子阱层上生长电子阻挡层，可以避免电子大量堆积量子垒层和电子阻挡层的界面处无法参与发光的问题。The multiple quantum well structure is composed of alternately grown first quantum barrier layers and first quantum well layers. In the multiple quantum well structure, the last layer along its growth direction is the first quantum well layer. Compared with the quantum barrier layer as the last layer of the multiple quantum well structure in the traditional method, the electron barrier layer is directly grown on the last first quantum well layer in the embodiment of the present disclosure, which can avoid a large number of electrons accumulating the quantum barrier layer and the electron barrier layer. The problem that the interface of the layer cannot participate in the luminescence.
进一步地，本公开实施例中，最后一层生长的第一量子阱层为B xAl yGa 1-x-yN量子阱或In xAl yGa 1-x-yN量子阱中的一种，除此之外的其它第一量子阱层为Al bGa 1-bN量子阱，0＜x＜1，0≤y＜1，0＜b＜1。通过改变多量子阱结构中最后一层多量子阱层的成分，可以进一步提升发光效率。 Further, in the embodiment of the present disclosure, the first quantum well layer grown on the last layer is one of B x Al y Ga 1-xy N quantum wells or In x Al y Ga 1-xy N quantum wells, except for The other first quantum well layer is Al b Ga 1-b N quantum well, 0<x<1, 0≦y<1, 0<b<1. By changing the composition of the last multi-quantum well layer in the multi-quantum well structure, the luminous efficiency can be further improved.
图2示意性示出了本公开另一实施例提供的多量子阱结构的结构示意图。参阅图2，结合图3A和3B，对本公开另一种多量子阱结构进行详细说明。FIG. 2 schematically shows a structural diagram of a multiple quantum well structure provided by another embodiment of the present disclosure. Referring to FIG. 2, in conjunction with FIGS. 3A and 3B, another multiple quantum well structure of the present disclosure will be described in detail.
多量子阱结构由交替生长的第一量子垒层和第一量子阱层组成，该多量子阱结构中，沿着其生长方向的最后一层为第一量子阱层，进一步地，该最后一层第一量子阱层上还生长有第二量子垒层，该第二量子垒层与第一量子垒层的组分不同，或者该第二量子垒层与第一量子垒层的组分相同但组分含量不同。The multiple quantum well structure is composed of alternately grown first quantum barrier layers and first quantum well layers. In the multiple quantum well structure, the last layer along its growth direction is the first quantum well layer. Further, the last A second quantum barrier layer is also grown on the first quantum well layer, the composition of the second quantum barrier layer is different from that of the first quantum barrier layer, or the composition of the second quantum barrier layer is the same as that of the first quantum barrier layer But the component content is different.
第二量子垒层与第一量子垒层的组分不同，具体地，第一量子垒层 为Al aGa 1-aN量子垒，第二量子垒层为B mAl nGa 1-m-nN量子垒或In mAl nGa 1-m-nN量子垒中的一种，0＜a＜1，0＜m＜1，0≤n＜1。 The composition of the second quantum barrier layer is different from that of the first quantum barrier layer. Specifically, the first quantum barrier layer is Al a Ga 1-a N quantum barrier, and the second quantum barrier layer is B m Al n Ga 1-mn N One of quantum barriers or In m Al n Ga 1-mn N quantum barriers, 0<a<1, 0<m<1, 0≦n<1.
第二量子垒层与第一量子垒层的组分相同但组分含量不同，具体地，分为以下两种情况：The second quantum barrier layer and the first quantum barrier layer have the same composition but different composition content. Specifically, they are divided into the following two cases:
第一量子垒层的Al组分含量沿着生长方向固定不变，第二量子垒层的Al组分含量沿着其生长方向均匀递减至第一预设值。第一预设值为第一量子阱层的Al组分含量。如图3A所示，图3A中a表示第一量子垒层中的Al组分含量，b表示第一量子垒层中的Al组分含量，第一预设值等于b。可以理解的是，多量子阱结构中，第一量子阱层中Al组分含量b＜第一量子垒层中Al组分含量a。The Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly decreases to the first preset value along the growth direction. The first preset value is the Al composition content of the first quantum well layer. As shown in FIG. 3A, in FIG. 3A, a represents the Al composition content in the first quantum barrier layer, b represents the Al composition content in the first quantum barrier layer, and the first preset value is equal to b. It can be understood that, in the multiple quantum well structure, the Al composition content b in the first quantum well layer is less than the Al composition content a in the first quantum barrier layer.
第一量子垒层的Al组分含量沿着生长方向固定不变，第二量子垒层的Al组分含量沿着其生长方向均匀递增至第二预设值。如图3B所示，图3B中a表示第一量子垒层中的Al组分含量，k表示在第二量子垒层上生长的电子阻挡层的Al组分含量，第二预设值等于k，a＜k。The Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer uniformly increases to the second preset value along the growth direction. As shown in FIG. 3B, a in FIG. 3B represents the Al composition content of the first quantum barrier layer, k represents the Al composition content of the electron blocking layer grown on the second quantum barrier layer, and the second preset value is equal to k , A<k.
本公开实施例还示出了一种光电器件外延片，包括图1或图2所示实施例中的多量子阱结构。The embodiment of the present disclosure also shows an epitaxial wafer of an optoelectronic device, including the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2.
仅以光电器件外延片为图4所示发光二极管外延片为例，光电器件外延片自下往上可依次包括衬底1、电子注入层2、多量子阱层3、电子阻挡层4和空穴注入层5，多量子阱层3为本公开实施例提供的多量子阱结构。其中，衬底为蓝宝石衬底、硅衬底、金属衬底、碳化硅、氮化镓、氮化铝等，这里不对衬底的材料做任何限制。电子注入层2外延生长在衬底1上，多量子阱层3外延生长在电子注入层2上，电子阻挡层4生长在多量子阱层3上，空穴注入层5生长在电子阻挡层4上。并且，现有发光二极管外延片的衬底、多量子阱层、电子阻挡层和空穴注入层的结构均适用于本公开实施例中衬底1、电子注入层2、电子阻挡层4和空穴注入层5的结构。Taking the photoelectric device epitaxial wafer as the light-emitting diode epitaxial wafer shown in FIG. 4 as an example, the optoelectronic device epitaxial wafer may sequentially include the substrate 1, the electron injection layer 2, the multiple quantum well layer 3, the electron blocking layer 4, and the space from bottom to top. The hole injection layer 5 and the multiple quantum well layer 3 are multiple quantum well structures provided by the embodiments of the disclosure. Among them, the substrate is a sapphire substrate, a silicon substrate, a metal substrate, silicon carbide, gallium nitride, aluminum nitride, etc., and there is no restriction on the material of the substrate here. The electron injection layer 2 is epitaxially grown on the substrate 1, the multiple quantum well layer 3 is epitaxially grown on the electron injection layer 2, the electron blocking layer 4 is grown on the multiple quantum well layer 3, and the hole injection layer 5 is grown on the electron blocking layer 4. on. In addition, the structures of the substrate, the multiple quantum well layer, the electron blocking layer, and the hole injection layer of the existing light-emitting diode epitaxial wafer are all suitable for the substrate 1, the electron injection layer 2, the electron blocking layer 4, and the cavity in the embodiments of the present disclosure. The structure of the hole injection layer 5.
本公开实施例中的发光二极管外延片中，除了多量子阱结构采用图1或图2所示实施例中的多量子阱结构之外，多量子阱结构之外的其它结构与现有发光二极管外延片的其它结构相同。In the light emitting diode epitaxial wafer in the embodiments of the present disclosure, in addition to the multiple quantum well structure adopting the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2, other structures other than the multiple quantum well structure are the same as existing light emitting diodes. The other structure of the epitaxial wafer is the same.
图5A示意性示出了现有光电器件外延片中Al组分分布图，图5B示意性示出了本公开实施例提供的光电器件外延片中Al组分分布图。i、a、b、k、j分别表示电子注入层2、电子垒层、量子阱层、电子阻挡层4、空穴注入层5中Al组分的含量，其中1＞k＞j＞i＞a＞b，量子阱层和量子垒层的数目在1到10之间。FIG. 5A schematically shows a distribution diagram of Al composition in an epitaxial wafer of an existing optoelectronic device, and FIG. 5B schematically shows a distribution diagram of Al composition in an epitaxial wafer of a photovoltaic device provided by an embodiment of the present disclosure. i, a, b, k, j respectively represent the content of Al component in the electron injection layer 2, the electron barrier layer, the quantum well layer, the electron blocking layer 4, and the hole injection layer 5, where 1>k>j>i> a>b, the number of quantum well layers and quantum barrier layers is between 1 and 10.
对比图5A和图5B可以看出，与传统光电器件外延片相比，本公开实施例中的光电器件外延片去除多量子阱结构中的最后一个量子垒层，大幅度提高了电子阻挡层的电子有效势垒高度，增强了外延片对电子的阻挡能力，有效抑制电子从有源区溢出，从而提升形成的光电器件的内量子效率、外量子效率和光输出率。Comparing FIG. 5A and FIG. 5B, it can be seen that, compared with the conventional optoelectronic device epitaxial wafer, the optoelectronic device epitaxial wafer in the embodiments of the present disclosure removes the last quantum barrier layer in the multiple quantum well structure, and greatly improves the electron barrier layer. The effective barrier height of electrons enhances the ability of the epitaxial wafer to block electrons, effectively inhibits the overflow of electrons from the active area, thereby improving the internal quantum efficiency, external quantum efficiency and light output rate of the formed optoelectronic device.
可以理解的是，图1或图2所示实施例中的多量子阱结构也适用于其它光电器件外延片中，例如用于发光激光器外延片、发光探测器外延片等。与发光二极管外延片相似的是，其它光电器件外延片中，除了多量子阱结构采用图1或图2所示实施例中的多量子阱结构之外，光电器件外延片的其它结构为现有结构，本公开实施例中不再赘述。It is understandable that the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2 is also applicable to other optoelectronic device epitaxial wafers, such as light-emitting laser epitaxial wafers, light-emitting detector epitaxial wafers, and the like. Similar to the light emitting diode epitaxial wafer, in other optoelectronic device epitaxial wafers, except that the multiple quantum well structure adopts the multiple quantum well structure in the embodiment shown in FIG. 1 or FIG. 2, the other structures of the optoelectronic device epitaxial wafer are existing The structure will not be repeated in the embodiments of the present disclosure.
本公开实施例还示出了一种光电器件，包括上述实施例中的光电器件外延片。The embodiments of the present disclosure also show an optoelectronic device, including the optoelectronic device epitaxial wafer in the above embodiments.
光电器件例如为发光二极管、发光激光器、发光探测器中的一种。可以将上述实施例中的光电器件外延片应用在光电器件中，例如在发光二极管外延片上制备电极，以封装形成发光二极管芯片等。The optoelectronic device is, for example, one of a light-emitting diode, a light-emitting laser, and a light-emitting detector. The optoelectronic device epitaxial wafers in the above embodiments can be applied to optoelectronic devices, for example, electrodes are prepared on the light emitting diode epitaxial wafers to package and form light emitting diode chips.
图6A示意性示出了现有光电器件与本公开实施例提供的光电器件的发光效率的比较示意图，图6B示意性示出了现有光电器件与本公开实施例提供的光电器件的外量子效率的比较示意图。其中，图6A和图6B中没有最后一层量子垒层(Last Quantum Barrier，LQB)的发光二极管(Light Emitting Diode，LED)，是指去除传统LED结构的LQB后形成的LED，即基于图1所示实施例中多量子阱结构形成的LED。FIG. 6A schematically shows a comparison diagram of the luminous efficiency of the existing optoelectronic device and the optoelectronic device provided by the embodiment of the present disclosure, and FIG. 6B schematically shows the external quantum of the existing optoelectronic device and the optoelectronic device provided by the embodiment of the present disclosure. Comparison diagram of efficiency. Among them, the light-emitting diode (Light Emitting Diode, LED) without the last quantum barrier layer (LQB) in Figure 6A and Figure 6B refers to the LED formed after removing the LQB of the traditional LED structure, which is based on Figure 1. In the illustrated embodiment, the LED is formed with a multiple quantum well structure.
对比图6A和图6B可以看出，与传统光电器件相比，本公开实施例中的光电器件去除多量子阱结构中的最后一个量子垒层，大大提升了光电器件的发光功率和外量子效率。Comparing FIGS. 6A and 6B, it can be seen that, compared with traditional optoelectronic devices, the optoelectronic device in the embodiments of the present disclosure removes the last quantum barrier layer in the multiple quantum well structure, which greatly improves the luminous power and external quantum efficiency of the optoelectronic device. .
至此，已对本公开多量子阱结构、光电器件外延片、光电器件进行了详细说明，通过将多量子阱结构的最后一层设置为量子阱层，或者将最后一层设置为量子阱层且改变量子阱的成分，或者将传统多量子阱结构中最后一层量子垒层进行组分渐变或改变组分，都可以有效抑制了电子从有源区溢出，并将上述任一种多量子阱结构应用于光电器件外延片及光电器件中，提高了外延片中载流子的光复合效率、内量子效率等，从而实现大功率光电器件的制备。So far, the multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device of the present disclosure have been described in detail. By setting the last layer of the multiple quantum well structure as a quantum well layer, or setting the last layer as a quantum well layer and changing The composition of the quantum well, or the composition gradient or change of the last layer of the quantum barrier layer in the traditional multiple quantum well structure, can effectively inhibit the overflow of electrons from the active region, and can reduce any of the above multiple quantum well structures. It is applied to epitaxial wafers of optoelectronic devices and optoelectronic devices to improve the optical recombination efficiency and internal quantum efficiency of carriers in the epitaxial wafers, thereby realizing the preparation of high-power optoelectronic devices.
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above are only specific embodiments of the present invention and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

  1. 一种多量子阱结构，由交替生长的第一量子垒层和第一量子阱层组成，其中，所述多量子阱结构中，沿其生长方向的最后一层为所述第一量子阱层。A multiple quantum well structure is composed of alternately grown first quantum barrier layers and first quantum well layers, wherein in the multiple quantum well structure, the last layer along its growth direction is the first quantum well layer .
  2. 根据权利要求1所述的多量子阱结构，其中，所述最后一层第一量子阱层上生长有第二量子垒层，所述第二量子垒层与所述第一量子垒层的组分不同或组分含量不同。The multiple quantum well structure according to claim 1, wherein a second quantum barrier layer is grown on the last layer of the first quantum well layer, and a combination of the second quantum barrier layer and the first quantum barrier layer Different or different component content.
  3. 根据权利要求2所述的多量子阱结构，其中，所述第一量子垒层的Al组分含量沿着生长方向固定不变，所述第二量子垒层的Al组分含量沿着其生长方向均匀递减至第一预设值。The multiple quantum well structure according to claim 2, wherein the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer grows along the same The direction decreases uniformly to the first preset value.
  4. 根据权利要求3所述的多量子阱结构，其中，所述第一预设值为所述第一量子阱层的Al组分含量。The multiple quantum well structure according to claim 3, wherein the first predetermined value is the Al composition content of the first quantum well layer.
  5. 根据权利要求2所述的多量子阱结构，其中，所述第一量子垒层的Al组分含量沿着生长方向固定不变，所述第二量子垒层的Al组分含量沿着其生长方向均匀递增至第二预设值。The multiple quantum well structure according to claim 2, wherein the Al composition content of the first quantum barrier layer is fixed along the growth direction, and the Al composition content of the second quantum barrier layer grows along the same The direction is uniformly increased to the second preset value.
  6. 根据权利要求2所述的多量子阱结构，其中，所述第一量子垒层为Al aGa 1-aN量子垒，所述第二量子垒层为B mAl nGa 1-m-nN量子垒或In mAl nGa 1-m-nN量子垒中的一种，0＜a＜1，0＜m＜1，0≤n＜1。 The multiple quantum well structure of claim 2, wherein the first quantum barrier layer is Al a Ga 1-a N quantum barrier, and the second quantum barrier layer is B m Al n Ga 1-mn N quantum barrier. One of the barriers or In m Al n Ga 1-mn N quantum barriers, 0<a<1, 0<m<1, 0≦n<1.
  7. 根据权利要求1所述的多量子阱结构，其中，所述最后一层第一量子阱层为B xAl yGa 1-x-yN量子阱或In xAl yGa 1-x-yN量子阱中的一种，所述最后一层第一量子阱层之外的其它第一量子阱层为Al bGa 1-bN量子阱，0＜x＜1，0≤y＜1，0＜b＜1。 The multiple quantum well structure according to claim 1, wherein the last layer of the first quantum well layer is B x Al y Ga 1-xy N quantum well or In x Al y Ga 1-xy N quantum well One type, the other first quantum well layers except the first quantum well layer of the last layer are Al b Ga 1-b N quantum wells, 0<x<1, 0≤y<1, 0<b<1 .
  8. 一种光电器件外延片，包括如权利要求1至7任一项所述的多量子阱结构。An epitaxial wafer for an optoelectronic device, comprising the multiple quantum well structure according to any one of claims 1 to 7.
  9. 根据权利要求8所述的光电器件外延片，其中，所述光电器件外延片还包括电子阻挡层，所述电子阻挡层外延生长在所述多量子阱结构上，所述多量子结构中的第二预设值为所述电子阻挡层的Al组分含量。The optoelectronic device epitaxial wafer according to claim 8, wherein the optoelectronic device epitaxial wafer further comprises an electron blocking layer, and the electron blocking layer is epitaxially grown on the multi-quantum well structure, the first in the multi-quantum structure The second preset value is the Al component content of the electron blocking layer.
  10. 一种光电器件，包括如权利要求8至9任一项所述的光电器件外延片。An optoelectronic device, comprising the optoelectronic device epitaxial wafer according to any one of claims 8-9.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090283746A1 (en) * 2008-05-15 2009-11-19 Palo Alto Research Center Incorporated Light-emitting devices with modulation doped active layers
CN102545058A (en) * 2012-01-16 2012-07-04 苏州纳睿光电有限公司 Epitaxial structure of gallium nitride based laser device and manufacturing method of epitaxial structure
CN103489981A (en) * 2012-06-07 2014-01-01 隆达电子股份有限公司 Light emitting diode and method for manufacturing the same
CN207731944U (en) * 2018-01-05 2018-08-14 广东省半导体产业技术研究院 A kind of structure of aluminum gallium nitride base ultraviolet light source device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090283746A1 (en) * 2008-05-15 2009-11-19 Palo Alto Research Center Incorporated Light-emitting devices with modulation doped active layers
CN102545058A (en) * 2012-01-16 2012-07-04 苏州纳睿光电有限公司 Epitaxial structure of gallium nitride based laser device and manufacturing method of epitaxial structure
CN103489981A (en) * 2012-06-07 2014-01-01 隆达电子股份有限公司 Light emitting diode and method for manufacturing the same
CN207731944U (en) * 2018-01-05 2018-08-14 广东省半导体产业技术研究院 A kind of structure of aluminum gallium nitride base ultraviolet light source device

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