WO2021035803A1 - Dynamic dangerous block screening method for nand flash - Google Patents

Dynamic dangerous block screening method for nand flash Download PDF

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WO2021035803A1
WO2021035803A1 PCT/CN2019/105122 CN2019105122W WO2021035803A1 WO 2021035803 A1 WO2021035803 A1 WO 2021035803A1 CN 2019105122 W CN2019105122 W CN 2019105122W WO 2021035803 A1 WO2021035803 A1 WO 2021035803A1
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block
dangerous
error bit
threshold
page
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PCT/CN2019/105122
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French (fr)
Chinese (zh)
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张明
魏智汎
王展南
曾瑞华
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江苏华存电子科技有限公司
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Publication of WO2021035803A1 publication Critical patent/WO2021035803A1/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0619—Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/064—Management of blocks
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair

Definitions

  • the invention relates to the technical field of data storage, in particular to a method for dynamic NandFlash dangerous block screening.
  • NandFlash can maintain charge even without power.
  • the storage method is based on floating gate technology. There is a floating gate between the gate (control gate) and the drain for storing data.
  • Data is stored in NandFlash in the form of electric charge.
  • the gate and main board are insulated by oxide film, so the charge can be stored for a long time, but if the oxide film is defective or damaged, the data will be received damage.
  • NandFlash memory Due to the influence of the manufacturing process or the electrical characteristics of the hardware, the data bits stored in the NandFlash memory will be reversed. In the current products using NandFlash, Nand is decoded through the decoding module. When the amount of inverted data is large and exceeds the error correction capability of the hardware error correction module, data loss may occur.
  • the purpose of the present invention is to provide a dynamic NandFlash dangerous block screening method.
  • Nand the existence of dangerous blocks can be identified by reading and writing. Based on the screening results, users of NandFlash memory can adopt different solutions. Avoid the impact of using dangerous blocks to solve the problems raised in the background art.
  • a method for dynamic NandFlash dangerous block screening including the following steps:
  • Step 1 ECC Fail occurs when the default voltage is used during the use of NandFlash
  • Step 2 Use the reading voltmeter provided by the manufacturer, and look at the error page.
  • the Error Bit when reading under each reading condition of the voltmeter, if the Error Bit is greater than the threshold under each reading condition of the voltmeter T, then mark this block as a dangerous block;
  • Step 3 As long as there is a page in the block, the Error Bit of all read voltmeters is greater than the threshold T, it means that the block is a dangerous block, mark it, and filter the next block;
  • Step 4 If all pages in the block can reduce the Error Bit below the threshold T without going through all the reading voltmeters, it is considered a normal block.
  • ECC Fail in the first step means that data loss has occurred.
  • the Error Bit in the second step is an error bit.
  • the Error Bit threshold T in the step 2 is set according to the ECC error correction capability, and the Error Bit threshold T is 85% of the decoding limit.
  • the present invention fully considers the influence of factors such as environmental temperature, wear times, Endurance, Error Bit threshold, etc., and can screen out dangerous blocks that cause poor characteristics in NandFlash during use.
  • the user reads out the data of the filtered dangerous block, puts it in the normal block, and avoids the dangerous block no longer in use, avoiding a series of unstable problems caused by the use of the dangerous block next time, which improves the product’s performance. stability.
  • Figure 1 is a schematic diagram of the process of the present invention.
  • the present invention provides a technical solution: a method for dynamically screening dangerous NandFlash blocks, including the following steps:
  • Step 1 ECC Fail occurs when the default voltage is used during the use of NandFlash
  • Step 2 Use the reading voltmeter provided by the manufacturer, and look at the error page.
  • the Error Bit when reading under each reading condition of the voltmeter, if the Error Bit is greater than the threshold under each reading condition of the voltmeter T, then mark this block as a dangerous block;
  • Step 3 As long as there is a page in the block, the Error Bit of all read voltmeters is greater than the threshold T, it means that the block is a dangerous block, mark it, and filter the next block;
  • Step 4 If all pages in the block can reduce the Error Bit below the threshold T without going through all the reading voltmeters, it is considered a normal block.
  • the dangerous block mark can be activated.
  • the following embodiment uses several U disks for testing.
  • the first USB flash drive is used for testing.
  • the USB flash drive has a capacity of 2gb, and the error bit threshold of the USB flash drive is 140.
  • a page in one of the blocks appears ECCFail, and then the voltage drops the Error Bit of the Page to 120, that is, the block is judged to be a normal block, it is displayed in green, and the test continues, and then the page in another block also appears ECC Fail, and then the voltage drops the Error Bit of Page to 95, that is, the block is judged to be a normal block .
  • ECC Fail appears in the page in the other block, and then the voltage drops the Error Bit of Page to 80, that is, the block is judged to be a normal block, and the test continues. No ECC Fail appears before the end, and the test is completed. .
  • the ECC Fail occurred three times during the test, and then the Error Bit was all reduced to below the threshold 140 by voltage, and all the blocks were judged to be normal.
  • a second USB flash drive was used for testing.
  • the USB flash drive has a capacity of 2gb, and the error bit threshold of the USB flash drive is 140.
  • ECCFail occurs in a page in one of the blocks under the default voltage, and then the voltage drops the Error Bit of the Page to 85, that is, the block is judged to be a normal block, it is displayed in green, and the test is continued, and then the page in another block also appears ECC Fail, and then the voltage drops the Error Bit of Page to 170, that is, it is judged that the block is a dangerous block.
  • the present invention fully considers the influence of factors such as environmental temperature, wear times, Endurance, Error Bit threshold, etc., can filter out dangerous blocks that cause poor characteristics in NandFlash during use, and the user reads out the data of the filtered dangerous blocks and releases them. To the normal block, and avoid the dangerous block no longer used, to avoid a series of unstable problems caused by the next use of the dangerous block, and improve the stability of the product.

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

A dynamic dangerous block screening method for an NAND Flash. All readable voltages are used for a page in a block that is subjected to ECC Fail under a default voltage, and whether there is a voltage capable of reducing an Error Bit of the page to below a threshold value is checked. If Error Bits read by using all the readable voltages are all greater than the threshold value T, this block is marked as a dangerous block, and if an Error Bit read by using one readable voltage is not greater than the threshold value T, this block is considered to be normal. A dangerous block that causes poor internal characteristics of an NAND Flash during the usage process can be screened. A user reads data from the screened dangerous block, places the data in a normal block, and avoids further using this dangerous block, thereby avoiding causing a series of problems of instability because the dangerous block is used next time, and improving the stability of a product.

Description

一种动态NandFlash危险块筛选的方法A Dynamic NandFlash Dangerous Block Screening Method 技术领域Technical field
本发明涉及数据存储技术领域，具体为一种动态NandFlash危险块筛选的方法。The invention relates to the technical field of data storage, in particular to a method for dynamic NandFlash dangerous block screening.
背景技术Background technique
NandFlash可以在无电源的情况下仍然保持电荷，存储方式基于浮栅(Floating Gate)的技术，在栅极(控制栅)与漏极之间存在浮置栅，用于存储数据。NandFlash can maintain charge even without power. The storage method is based on floating gate technology. There is a floating gate between the gate (control gate) and the drain for storing data.
数据在NandFlash中的存储是以电荷形式存储的，栅极及主板利用氧化膜进行绝缘处理，所以可以使电荷存储很长时间，但是如果氧化膜存在缺陷或者遭到破坏，那么数据就会收到破坏。Data is stored in NandFlash in the form of electric charge. The gate and main board are insulated by oxide film, so the charge can be stored for a long time, but if the oxide film is defective or damaged, the data will be received damage.
由于制作工艺或者硬件电气特性的影响，存储在NandFlash存储器中的数据位会发生反转。当前使用NandFlash的产品中，都会通过解码模块对Nand进行解码，当发生反转的数据量较大并超出硬件纠错模块的纠错能力时，可能就会产生数据丢失。Due to the influence of the manufacturing process or the electrical characteristics of the hardware, the data bits stored in the NandFlash memory will be reversed. In the current products using NandFlash, Nand is decoded through the decoding module. When the amount of inverted data is large and exceeds the error correction capability of the hardware error correction module, data loss may occur.
所以在读取数据时容易发生ECC Fail，所以我们要提前监测出比较危险的块(Dangerous Block)，防止在某次读取数据时直接丢失数据，因此，亟待一种改进的技术来解决现有技术中所存在的这一问题。Therefore, ECC Fail is prone to occur when reading data, so we need to detect dangerous blocks in advance to prevent direct data loss when reading data. Therefore, an improved technology is urgently needed to solve the existing problem. This problem exists in technology.
发明内容Summary of the invention
本发明的目的在于提供一种动态NandFlash危险块筛选的方法，在Nand的使用过程中通过读写辨别出危险块的存在，基于该筛选的结果，NandFlash存储器的使用者可以采取不同的应对方案，规避使用危险块带来的影响，以解决上述背景技术中提出的问题。The purpose of the present invention is to provide a dynamic NandFlash dangerous block screening method. During the use of Nand, the existence of dangerous blocks can be identified by reading and writing. Based on the screening results, users of NandFlash memory can adopt different solutions. Avoid the impact of using dangerous blocks to solve the problems raised in the background art.
为实现上述目的，本发明提供如下技术方案：一种动态NandFlash危险块筛选的方法，包括以下步骤：In order to achieve the above object, the present invention provides the following technical solution: a method for dynamic NandFlash dangerous block screening, including the following steps:
步骤一：在NandFlash使用过程中使用默认电压出现ECC Fail；Step 1: ECC Fail occurs when the default voltage is used during the use of NandFlash;
步骤二：使用厂商提供的读取电压表，并看出错的页在每个读取电压表的条件下读取时的Error Bit，如果在每个读取电压表的条件下Error Bit都大于阈值T，那么就把这个块标为危险块；Step 2: Use the reading voltmeter provided by the manufacturer, and look at the error page. The Error Bit when reading under each reading condition of the voltmeter, if the Error Bit is greater than the threshold under each reading condition of the voltmeter T, then mark this block as a dangerous block;
步骤三：只要块中有一个页经过所有的读取电压表的Error Bit都大于阈值T，就说明该块为危险块，进行标注，并进行下一个块的筛选；Step 3: As long as there is a page in the block, the Error Bit of all read voltmeters is greater than the threshold T, it means that the block is a dangerous block, mark it, and filter the next block;
步骤四：若块中所有页不需要经过所有的读取电压表就可以把Error Bit降低到阈值T以下则认为是正常的块。Step 4: If all pages in the block can reduce the Error Bit below the threshold T without going through all the reading voltmeters, it is considered a normal block.
优选的，所述步骤一中ECC Fail为发生数据丢失。Preferably, ECC Fail in the first step means that data loss has occurred.
优选的，所述步骤二中Error Bit为错误位。Preferably, the Error Bit in the second step is an error bit.
优选的，所述步骤二中Error Bit阈值T根据ECC纠错能力设置，所述Error Bit阈值T为解码极限的85％。Preferably, the Error Bit threshold T in the step 2 is set according to the ECC error correction capability, and the Error Bit threshold T is 85% of the decoding limit.
与现有技术相比，本发明的有益效果是：Compared with the prior art, the beneficial effects of the present invention are:
本发明充分考虑了环境温度、磨损次数、Endurance、Error Bit阈值等因素影响，可以筛选出在使用过程中导致NandFlash内特性不佳的危险块。用户把经过筛选的危险块的数据读出，放到正常块中，并把这个危险块避过不再使用，避免因为下次使用了危险块导致一系列不稳定的问题出现，提升了产品的稳定性。The present invention fully considers the influence of factors such as environmental temperature, wear times, Endurance, Error Bit threshold, etc., and can screen out dangerous blocks that cause poor characteristics in NandFlash during use. The user reads out the data of the filtered dangerous block, puts it in the normal block, and avoids the dangerous block no longer in use, avoiding a series of unstable problems caused by the use of the dangerous block next time, which improves the product’s performance. stability.
附图说明Description of the drawings
图1为本发明流程示意图。Figure 1 is a schematic diagram of the process of the present invention.
具体实施方式detailed description
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
请参阅图1，本发明提供一种技术方案：一种动态NandFlash危险块筛选的方法，包括以下步骤：Referring to Fig. 1, the present invention provides a technical solution: a method for dynamically screening dangerous NandFlash blocks, including the following steps:
步骤一：在NandFlash使用过程中使用默认电压出现ECC Fail；Step 1: ECC Fail occurs when the default voltage is used during the use of NandFlash;
步骤二：使用厂商提供的读取电压表，并看出错的页在每个读取电压表的条件下读取时的Error Bit，如果在每个读取电压表的条件 下Error Bit都大于阈值T，那么就把这个块标为危险块；Step 2: Use the reading voltmeter provided by the manufacturer, and look at the error page. The Error Bit when reading under each reading condition of the voltmeter, if the Error Bit is greater than the threshold under each reading condition of the voltmeter T, then mark this block as a dangerous block;
步骤三：只要块中有一个页经过所有的读取电压表的Error Bit都大于阈值T，就说明该块为危险块，进行标注，并进行下一个块的筛选；Step 3: As long as there is a page in the block, the Error Bit of all read voltmeters is greater than the threshold T, it means that the block is a dangerous block, mark it, and filter the next block;
步骤四：若块中所有页不需要经过所有的读取电压表就可以把Error Bit降低到阈值T以下则认为是正常的块。Step 4: If all pages in the block can reduce the Error Bit below the threshold T without going through all the reading voltmeters, it is considered a normal block.
在任何使用Nand的存储设备使用过程中，都会在默认电压下发生数据丢失。在默认电压下出现ECC Fail的条件下，可以启动危险块标记。将在默认电压下出现ECC Fail的块(Block)中的页(Page)使用所有的可读取电压，并看是否有电压能将Page的Error Bit降到阈值以下。若使用所有可读取电压(Retry Table)读出的Error Bit都大于阈值T，则将这个块(Block)标记为危险块。若有一个读取电压读出的Error Bit不大于阈值T，则认为这个块(Block)是正常的。During the use of any storage device using Nand, data loss will occur under the default voltage. Under the condition that ECC Fail occurs under the default voltage, the dangerous block mark can be activated. Use all the readable voltages for the pages in the block (Block) where ECC Fail occurs under the default voltage, and see if there is a voltage that can lower the Error Bit of the Page below the threshold. If the Error Bit read using all readable voltages (Retry Table) is greater than the threshold T, then this block (Block) is marked as a dangerous block. If there is an Error Bit that is not greater than the threshold T, the block is considered normal.
以下实施例用若干个U盘进行测试。The following embodiment uses several U disks for testing.
实施例一：Example one:
采用第一个U盘进行测试，该U盘容量为2gb，该U盘的Error Bit的阈值为140，在默认电压下其中一个块中的页出现了ECCFail，随后电压将Page的Error Bit降到120，即判断该块为正常的块，显示为绿色，继续测试，然后另一个块中的页也出现了ECC Fail，随后 电压将Page的Error Bit降到95，即判断该块为正常的块，继续测试，第三次另一个块中的页出现了ECC Fail，随后电压将Page的Error Bit降到80，即判断该块为正常的块，继续测试，结束前未出现ECC Fail，完成测试。The first USB flash drive is used for testing. The USB flash drive has a capacity of 2gb, and the error bit threshold of the USB flash drive is 140. Under the default voltage, a page in one of the blocks appears ECCFail, and then the voltage drops the Error Bit of the Page to 120, that is, the block is judged to be a normal block, it is displayed in green, and the test continues, and then the page in another block also appears ECC Fail, and then the voltage drops the Error Bit of Page to 95, that is, the block is judged to be a normal block , Continue the test, the third time ECC Fail appears in the page in the other block, and then the voltage drops the Error Bit of Page to 80, that is, the block is judged to be a normal block, and the test continues. No ECC Fail appears before the end, and the test is completed. .
本实施例在测试过程中出现了三次ECC Fail，随后通过电压将Error Bit均降到阈值140以下，均判断为正常的块。In this embodiment, the ECC Fail occurred three times during the test, and then the Error Bit was all reduced to below the threshold 140 by voltage, and all the blocks were judged to be normal.
实施例二：Embodiment two:
采用第二个U盘进行测试，该U盘容量为2gb，该U盘的Error Bit的阈值为140，在默认电压下其中一个块中的页出现了ECCFail，随后电压将Page的Error Bit降到85，即判断该块为正常的块，显示为绿色，继续测试，然后另一个块中的页也出现了ECC Fail，随后电压将Page的Error Bit降到170，即判断该块为危险块，显示为红色并进行标记，继续测试，在默认电压下其中一个块中的页出现了ECC Fail，随后电压将Page的Error Bit降到130，即判断该块为正常的块，显示为绿色，继续测试，在默认电压下其中一个块中的页出现了ECC Fail，电压将Page的Error Bit降到110，即判断该块为正常的块，显示为绿色，继续测试，在默认电压下其中一个块中的页出现了ECC Fail，电压将Page的Error Bit降到150，即判断该块为危险块，显示为红色并进行标记，继续测试，结束前未出现ECC Fail。A second USB flash drive was used for testing. The USB flash drive has a capacity of 2gb, and the error bit threshold of the USB flash drive is 140. ECCFail occurs in a page in one of the blocks under the default voltage, and then the voltage drops the Error Bit of the Page to 85, that is, the block is judged to be a normal block, it is displayed in green, and the test is continued, and then the page in another block also appears ECC Fail, and then the voltage drops the Error Bit of Page to 170, that is, it is judged that the block is a dangerous block. Displayed in red and marked, continue the test, the page in one of the blocks under the default voltage appears ECC Fail, and then the voltage drops the Error Bit of Page to 130, that is, the block is judged to be a normal block, displayed in green, and continue Test, the page in one of the blocks under the default voltage appears ECC Fail, the voltage drops the Error Bit of Page to 110, that is, the block is judged to be a normal block, and it is displayed in green, and the test continues. One of the blocks is under the default voltage. ECC Fail appears on the page in, and the voltage drops the Error Bit of Page to 150, that is, the block is judged to be a dangerous block, displayed in red and marked, and the test continues. ECC Fail did not appear before the end.
本实施例在测试过程中出现了五次ECC Fail，其中有三次通过电 压将Error Bit均降到阈值140以下，这三次均判断为正常的块，其中有两次通过电压未将Error Bit均降到阈值140以下，这两次均判断为危险块，并进行了标记。In this embodiment, there were five ECC Fails during the test, and three of them passed the voltage to lower the Error Bit below the threshold 140. These three times were all judged to be normal blocks, and two of the passed voltages did not lower the Error Bit. When the threshold is below 140, both times are judged to be dangerous blocks and marked.
本发明充分考虑了环境温度、磨损次数、Endurance、Error Bit阈值等因素影响，可以筛选出在使用过程中导致NandFlash内特性不佳的危险块，用户把经过筛选的危险块的数据读出，放到正常块中，并把这个危险块避过不再使用，避免因为下次使用了危险块导致一系列不稳定的问题出现，提升了产品的稳定性。The present invention fully considers the influence of factors such as environmental temperature, wear times, Endurance, Error Bit threshold, etc., can filter out dangerous blocks that cause poor characteristics in NandFlash during use, and the user reads out the data of the filtered dangerous blocks and releases them. To the normal block, and avoid the dangerous block no longer used, to avoid a series of unstable problems caused by the next use of the dangerous block, and improve the stability of the product.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, and substitutions can be made to these embodiments without departing from the principle and spirit of the present invention. And variations, the scope of the present invention is defined by the appended claims and their equivalents.

Claims (4)

  1. 一种动态NandFlash危险块筛选的方法，其特征在于：包括以下步骤：A dynamic NandFlash dangerous block screening method is characterized in that it comprises the following steps:
    步骤一：在NandFlash使用过程中使用默认电压出现ECC Fail；Step 1: ECC Fail occurs when the default voltage is used during the use of NandFlash;
    步骤二：使用厂商提供的读取电压表，并看出错的页在每个读取电压表的条件下读取时的Error Bit，如果在每个读取电压表的条件下Error Bit都大于阈值T，那么就把这个块标为危险块；Step 2: Use the reading voltmeter provided by the manufacturer, and look at the error page. The Error Bit when reading under each reading condition of the voltmeter, if the Error Bit is greater than the threshold under each reading condition of the voltmeter T, then mark this block as a dangerous block;
    步骤三：只要块中有一个页经过所有的读取电压表的Error Bit都大于阈值T，就说明该块为危险块，进行标注，并进行下一个块的筛选；Step 3: As long as there is a page in the block, the Error Bit of all read voltmeters is greater than the threshold T, it means that the block is a dangerous block, mark it, and filter the next block;
    步骤四：若块中所有页不需要经过所有的读取电压表就可以把Error Bit降低到阈值T以下则认为是正常的块。Step 4: If all pages in the block can reduce the Error Bit below the threshold T without going through all the reading voltmeters, it is considered a normal block.
  2. 根据权利要求1所述的一种动态NandFlash危险块筛选的方法，其特征在于：所述步骤一中ECC Fail为发生数据丢失。The method for dynamically screening dangerous NandFlash blocks according to claim 1, wherein the ECC Fail in the first step is that data loss has occurred.
  3. 根据权利要求1所述的一种动态NandFlash危险块筛选的方法，其特征在于：所述步骤二中Error Bit为错误位。The method for dynamically screening dangerous NandFlash blocks according to claim 1, wherein the Error Bit in the second step is an error bit.
  4. 根据权利要求1所述的一种动态NandFlash危险块筛选的方法，其特征在于：所述步骤二中Error Bit阈值T根据ECC纠错能力设置，所述Error Bit阈值T为解码极限的85％。The method for dynamically screening dangerous NandFlash blocks according to claim 1, wherein the Error Bit threshold T in the second step is set according to the ECC error correction capability, and the Error Bit threshold T is 85% of the decoding limit.
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