WO2021026888A1 - 石墨烯表面等离子体改性处理装置及处理方法 - Google Patents

石墨烯表面等离子体改性处理装置及处理方法 Download PDF

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WO2021026888A1
WO2021026888A1 PCT/CN2019/100790 CN2019100790W WO2021026888A1 WO 2021026888 A1 WO2021026888 A1 WO 2021026888A1 CN 2019100790 W CN2019100790 W CN 2019100790W WO 2021026888 A1 WO2021026888 A1 WO 2021026888A1
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vacuum chamber
graphene
glass container
treatment device
plasma modification
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PCT/CN2019/100790
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English (en)
French (fr)
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张波
金旭栋
朱理瀚
虞文武
马雯雯
聂俊
刘凯凯
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常州机电职业技术学院
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid

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  • the invention belongs to the technical field of graphene surface modification, and particularly relates to a graphene surface plasma modification treatment device and a treatment method.
  • Plasma technology is often used for surface modification of materials.
  • Graphene is also widely used in various fields. Effectively dispersing surfactant-free graphene in an aqueous solution has always been a dream desire of materials scientists.
  • due to the hydrophobicity of the surface of graphene it is difficult Evenly dispersed in water, it is easy to agglomerate, which limits the application and development of graphene.
  • graphene solutions are mainly obtained by ultrasonic, heating or airflow. However, these methods also have low yield and serious lamella agglomeration.
  • Long-term ultrasound causes a large number of structural defects in graphene, the need to introduce more surfactants or surface activators, etc., which greatly restricts these preparation methods.
  • the present invention proposes a graphene surface plasma modification treatment device and treatment method.
  • a graphene surface plasma modification treatment device which includes a vacuum chamber, a glass container, a radio frequency power supply system, a counter electrode and a rotating mechanism, and the vacuum chamber has a horizontal structure
  • the vacuum chamber is provided with gas-filling holes and exhaust holes
  • the counter electrode is connected to the radio frequency power supply system
  • the counter electrode has an arc-shaped structure
  • the inner arc part is a discharge layer
  • the middle part is an insulating layer
  • the outer circle The arc part is a shielding layer.
  • a cylindrical glass container is placed in the middle of the counter electrode.
  • the counter electrode is fixed on the inner wall of the vacuum chamber by a polytetrafluoroethylene block and is coaxial with the center of the glass container.
  • the glass container is connected to the rotating mechanism. Connected, one end of the glass container is provided with a through hole.
  • a shielded observation window is opened on the vacuum chamber, and the vacuum chamber includes a vacuum chamber body and a vacuum chamber head, and the vacuum chamber body and the vacuum chamber head are detachably connected.
  • the vacuum chamber has a horizontal rectangular structure with a length of 1500 mm, a width of 1200 mm, and a height of 1000 mm.
  • the glass container includes a container body and a container head, and the container body and the container head are detachably connected.
  • the glass container has a length of 1000 mm, an inner diameter of 600 mm, and a thickness of 5 mm.
  • the inflation hole is connected with a ventilation control system
  • the suction hole is connected with a ventilation control system
  • the rotating mechanism includes a rotating shaft and an active motor, the output end of the active motor is connected to the rotating shaft, and the rotating shaft is connected to the glass container.
  • the maximum power of the radio frequency power supply system is 1000 W and the frequency is 13.56 MHz.
  • the discharge layer is made of 304 stainless steel
  • the insulating layer is made of polytetrafluoroethylene
  • the shielding layer is made of 304 stainless steel.
  • the thickness of the discharge layer is 3 mm
  • the thickness of the insulating layer is 50 mm
  • the thickness of the shielding layer is 3 mm.
  • the present invention also provides a plasma modification treatment method for the graphene surface, which includes the following steps:
  • Step 1 Put the graphene to be processed into the glass container, close the container head and the vacuum chamber head, start the pumping control system, and keep the background vacuum of the vacuum chamber 0.01-1Pa;
  • Step 2 Turn on the ventilation control system, fill the vacuum chamber with mixed gas, maintain the vacuum and inflation state of the vacuum chamber, keep the working vacuum in the vacuum chamber stable at 10-20Pa, turn on the radio frequency power supply system to make the glow discharge area Tethered in a glass container;
  • Step 3 Turn on the active motor, rotate the glass container through the rotating shaft drive, and drive the graphene placed inside the glass container to continuously roll in the glow discharge area.
  • the processing time is 2-5min, and the discharge RF power is 80-120W;
  • Step 4 After the processing is completed, turn off the radio frequency power supply system, the ventilation control system, and the exhaust control system, vent air to atmospheric pressure, and take out the processed graphene.
  • the mixed gas is oxygen and helium, and the volume ratio of oxygen and helium is 10:1 to 5:1.
  • the present invention Compared with the prior art, the present invention has the following beneficial effects: the present invention solves the problem of low yield, serious lamellar agglomeration, and a large number of structural defects of graphene caused by long-term ultrasound. , The problem of the need to introduce more surfactants or surface activators, and the problem that the existing plasma treatment method can only act on the surface layer of graphene accumulation.
  • the invention is used to improve the hydrophilicity of the graphene surface, and is beneficial to realize the modification treatment of the graphene surface.
  • the device has a reasonable structure, good stability, and simple operation.
  • the treatment method is a pure physical modification and the treatment method is environmentally friendly. There is no need to introduce surfactants or surface activators, the processing results are reproducible and the production efficiency is high.
  • Figure 1 is a schematic diagram of the structure of a graphene surface plasma modification treatment device according to the present invention
  • FIG. 2 is a schematic diagram of a cross-sectional structure of a graphene surface plasma modification treatment device according to the present invention
  • Figure 3 is a schematic diagram of the counter electrode structure of the present invention
  • a graphene surface plasma modification treatment device includes a vacuum chamber 1, a glass container 2, a radio frequency power system 9, a counter electrode 10, and a rotating mechanism.
  • the vacuum chamber 1 is In a horizontal structure, the vacuum chamber 1 is provided with an inflatable hole 5 and an exhaust hole 6, the counter electrode 10 is connected to the radio frequency power supply system 9, the counter electrode 10 has an arc-shaped structure, and the inner arc part is a discharge layer 13.
  • the middle part is the insulating layer 14, the outer arc part is the shielding layer 15, the cylindrical glass container 2 is placed in the middle of the counter electrode 10, and the counter electrode 10 is fixed on the inner wall of the vacuum chamber 1 through a polytetrafluoroethylene block 12
  • the glass container 2 is connected to the rotating mechanism, and a through hole 11 is provided at one end of the glass container 2.
  • the vacuum chamber 1 of this embodiment realizes the glow discharge of the radio frequency power system 9 through the arc-shaped counter electrode 10 under the set vacuum condition, so that the plasma glow discharge area is confined in the glass container 2 to improve the effectiveness of graphene processing
  • the glass container 2 is driven to rotate through the rotating mechanism, thereby driving the graphene filled inside to continuously roll, and the graphene is uniformly surface treated.
  • the through hole 11 is used to realize the communication between the vacuum chamber 1 and the glass container 2.
  • the vacuum degree of the vacuum chamber 1 is ensured through the inflation hole 5 and the suction hole 6.
  • the vacuum chamber 1 of this embodiment is provided with a shielded observation window.
  • the vacuum chamber 1 includes a vacuum chamber body and a vacuum chamber head 4, and the vacuum chamber body and the vacuum chamber head 4 are detachably connected.
  • the vacuum chamber 1 has a horizontal rectangular structure with a length of 1500mm, a width of 1200mm, and a height of 1000mm.
  • the shielded observation window can be used to observe the transmission and glow discharge conditions in the vacuum chamber 1.
  • the shielded observation window can be set in On the vacuum chamber head 4, the structure in which the vacuum chamber body and the vacuum chamber head 4 are detachably connected is convenient for the installation inside the vacuum chamber 1 and the opening and closing of the vacuum chamber; the glass container 2 includes the container body and the container head 3, so The container body and the container head 3 are detachably connected.
  • the glass container 2 has a length of 1000 mm, an inner diameter of 600 mm, and a thickness of 5 mm.
  • the container body and the container head 3 are detachably connected to facilitate the taking and placing of graphene;
  • the gas filling hole 5 is connected to the ventilation control system, and the air extraction hole 6 is connected with the air extraction control system, and the vacuum degree of the vacuum chamber 1 is ensured through the ventilation control system and the air extraction control system;
  • the rotating mechanism includes a rotating shaft 7 and an active motor 8, the output end of the active motor 8 and the rotating shaft 7
  • the rotating shaft 7 is connected to the glass container 2, and the rotation speed is adjustable to control the rotation of the cylinder and the continuous rolling of graphene;
  • the maximum power of the radio frequency power system 9 is 1000W, the frequency is 13.56MHz, and it can be adjusted according to needs.
  • the discharge layer 13 is made of 304 stainless steel
  • the insulating layer 14 is made of polytetrafluoroethylene
  • the shielding layer 15 is made of 304 stainless steel
  • the thickness of the discharge layer 13 is 3mm
  • the thickness of the insulating layer 14 is 50 mm
  • the thickness of the shielding layer 15 is 3 mm
  • the number of through holes 11 is multiple
  • the multiple through holes 11 are uniformly distributed along the center of the glass container 2.
  • the present invention also provides a plasma modification treatment method for the graphene surface, which includes the following steps:
  • Step 1 Put the graphene to be processed into the glass container 2, close the container head 3 and the vacuum chamber head 4, start the air extraction control system, and keep the background vacuum of the vacuum chamber 1 0.01-1Pa;
  • Step 2 Turn on the ventilation control system, fill the vacuum chamber 1 with mixed gas, maintain the vacuum and inflation state of the vacuum chamber 1, and keep the working vacuum in the vacuum chamber 1 stable at 10-20 Pa, and turn on the radio frequency power system 9 , So that the glow discharge area is bound in the glass container 2;
  • Step 3 Turn on the active motor 8 and drive the glass container 2 through the rotating shaft 7 to drive the graphene placed inside the glass container 2 to continuously roll in the glow discharge area.
  • the processing time is 2-5min, and the discharge RF power is 80-120W ;
  • Step 4 After the processing is completed, turn off the radio frequency power supply system 9, the ventilation control system and the exhaust control system, vent air to atmospheric pressure, and take out the processed graphene.
  • the mixed gas is oxygen and helium, and the volume ratio of oxygen and helium is 10:1 to 5:1.

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Abstract

提供一种石墨烯表面等离子体改性处理装置及处理方法，属于石墨烯表面改性技术领域，解决了现有通过超声波、加热或气流等处理石墨烯的方法产率低、片层团聚严重、长时间超声造成石墨烯大量结构缺陷、需要引入较多表面活性剂或者表面活化物的问题，以及现有等离子体处理方法只能作用于石墨烯堆积的表面层的问题。它包括真空室、玻璃容器、射频电源***、对电极和旋转机构，所述真空室为卧式结构，所述对电极为圆弧形结构，所述对电极中间放置圆筒形玻璃容器，所述玻璃容器与旋转机构相连，以及相应的处理方法。主要用于石墨烯表面改性处理。

Description

[根据细则37.2由ISA制定的发明名称]　石墨烯表面等离子体改性处理装置及处理方法 技术领域
本发明属于石墨烯表面改性技术领域，特别是涉及一种石墨烯表面等离子体改性处理装置及处理方法。
背景技术
等离子体技术常用于材料表面改性，石墨烯也广泛应用于各领域，在水溶液中有效分散无表面活性剂的石墨烯一直是材料科学家梦寐以求的愿望，然而由于石墨烯表面的疏水性，很难均匀分地散到水中，容易团聚，因此也限制了石墨烯的应用发展，目前主要借助超声波、加热或气流的作用得到石墨烯溶液，但这些方法制备也存在产率不高、片层团聚严重、长时间超声造成石墨烯大量结构缺陷、需要引入较多表面活性剂或者表面活化物等缺点，使得这些制备方法受到很大的制约。目前也存在石墨烯表面等离子体改性的相关研究，但一般对于石墨烯采取平铺堆积方式，等离子体只能作用于石墨烯堆积的表面层，里面的石墨烯无法实现改性处理，市场上急需一种能实现产业化生产的装置及处理方法。用于提高石墨烯表面亲水性的等离子体改性装置及处理方法，有利于实现石墨烯表面的改性处理和应用。
发明内容
本发明为了解决现有技术中的问题，提出一种石墨烯表面等离子体改性处理装置及处理方法。
为实现上述目的，本发明采用以下技术方案：一种石墨烯表面等离子体改性处理装置，它包括真空室、玻璃容器、射频电源***、对电极和旋转机构，所述真空室为卧式结构，所述真空室上开设有充气孔和抽气孔，所述对电极与射频电源***相连，所述对电极为圆弧形结构，内侧圆弧部分为放电层，中间部分为绝缘层，外侧圆弧部分为屏蔽层，所述对电极中间放置圆筒形玻璃容器，所述对电极通过聚四氟乙烯块固定在真空室内壁上，并与玻璃容器中心同轴，所述玻璃容器与旋转机构相连，所述玻璃容器一端设置有通孔。
更进一步的，所述真空室上开设有屏蔽式观察窗，所述真空室包括真空室本体和真空室封头，所述真空室本体和真空室封头为可拆卸连接。所述真空室为卧式矩形结构，长度为1500mm，宽度为1200mm，高度为1000mm。
更进一步的，所述玻璃容器包括容器本体和容器封头，所述容器本体和容器封头为可拆卸连接。所述玻璃容器长度为1000mm，内径为600mm，厚度为5mm。
更进一步的，所述充气孔与通气控制***相连，所述抽气孔与抽气控制***相连。
更进一步的，所述旋转机构包括旋转轴和主动电机，所述主动电机的输出端与旋转轴相连，所述旋转轴与玻璃容器相连。
更进一步的，所述射频电源***的最大功率为1000W，频率为13.56MHz。
更进一步的，所述放电层为304不锈钢材质，所述绝缘层为聚四氟乙烯材质，所述屏蔽层为304不锈钢材质。
更进一步的，所述放电层厚度为3mm，所述绝缘层厚度为50mm，所述屏蔽层厚度为3mm。
本发明还提供了一种石墨烯表面等离子体改性处理方法，它包括以下步骤：
步骤一：将待处理的石墨烯装入玻璃容器内，关闭容器封头和真空室封头，启动抽气控制***，保持真空室的本底真空度0.01－1Pa；
步骤二：打开通气控制***，向真空室内充入混合气体，维持真空室的抽气和充气状态，使真空室内的工作真空度保持稳定在10～20Pa，开启射频电源***，使辉光放电区束缚在玻璃容器内；
步骤三：开启主动电机，通过旋转轴传动使玻璃容器旋转，带动玻璃容器内部放置的石墨烯在辉光放电区连续翻滚，处理时间为2-5min，放电射频功率为80－120W；
步骤四：处理完成后，关闭射频电源***、通气控制***和抽气控制***，通入空气至大气压，取出处理后的石墨烯。
更进一步的，所述步骤二中混合气体为氧气和氦气，氧气和氦气的体积比为10:1－5:1。
与现有技术相比，本发明的有益效果是：本发明解决了现有通过超声波、加热或气流等处理石墨烯的方法产率低、片层团聚严重、长时间超声造成石墨烯大量结构缺陷、需要引入较多表面活性剂或者表面活化物的问题，以及现有等离子体处理方法只能作用于石墨烯堆积的表面层的问题。本发明用于提高石墨烯表面的亲水性，有利于实现石墨烯表面的改性处理，该装置结构合理、稳定性好、操作简单，该处理方法为纯物理方法改性，处理方法环保，无需引入表面活性剂或者表面活化物，处理结果重复性好、生产效率高。
附图说明
图1为本发明所述的一种石墨烯表面等离子体改性处理装置结构示意图
图2为本发明所述的一种石墨烯表面等离子体改性处理装置剖视结构示意图
图3为本发明所述的对电极结构示意图
1-真空室，2-玻璃容器，3-容器封头，4-真空室封头，5-充气孔，6-抽气孔，7-旋转轴， 8-主动电机，9-射频电源***，10-对电极，11-通孔，12-聚四氟乙烯块，13-放电层，14-绝缘层，15-屏蔽层
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地阐述。
参见图1-3说明本实施方式，一种石墨烯表面等离子体改性处理装置，它包括真空室1、玻璃容器2、射频电源***9、对电极10和旋转机构，所述真空室1为卧式结构，所述真空室1上开设有充气孔5和抽气孔6，所述对电极10与射频电源***9相连，所述对电极10为圆弧形结构，内侧圆弧部分为放电层13，中间部分为绝缘层14，外侧圆弧部分为屏蔽层15，所述对电极10中间放置圆筒形玻璃容器2，所述对电极10通过聚四氟乙烯块12固定在真空室1内壁上，并与玻璃容器2中心同轴，所述玻璃容器2与旋转机构相连，所述玻璃容器2一端设置有通孔11。
本实施例真空室1在设定真空度条件下，通过圆弧形对电极10实现射频电源***9辉光放电，使等离子体辉光放电区域束缚在玻璃容器2内，提高石墨烯处理的有效性，通过旋转机构驱动玻璃容器2旋转，从而带动内部填装的石墨烯进行连续翻滚，对石墨烯进行均匀的表面处理，通孔11用于实现真空室1与玻璃容器2之间的连通，通过充气孔5和抽气孔6保证真空室1的真空度。
本实施例所述真空室1上开设有屏蔽式观察窗，所述真空室1包括真空室本体和真空室封头4，所述真空室本体和真空室封头4为可拆卸连接。所述真空室1为卧式矩形结构，长度为1500mm，宽度为1200mm，高度为1000mm，屏蔽式观察窗可以用于观察真空室1内传动和辉光放电的情况，屏蔽式观察窗可设置在真空室封头4上，真空室本体和真空室封头4可拆卸连接的结构便于真空室1内部的安装及真空室的开闭；所述玻璃容器2包括容器本体和容器封头3，所述容器本体和容器封头3为可拆卸连接。所述玻璃容器2长度为1000mm，内径为600mm，厚度为5mm，容器本体和容器封头3为可拆卸连接便于石墨烯的取放；所述充气孔5与通气控制***相连，所述抽气孔6与抽气控制***相连，通过通气控制***和抽气控制***保证真空室1的真空度；所述旋转机构包括旋转轴7和主动电机8，所述主动电机8的输出端与旋转轴7相连，所述旋转轴7与玻璃容器2相连，旋转速度可调，以控制实现圆筒旋转和石墨烯连续翻滚；所述射频电源***9的最大功率为1000W，频率为13.56MHz，根据需要可实现不同功率下的辉光放电；所述放电层13为304不锈钢材质，所述绝缘层14为聚四氟乙烯材质，所述屏蔽层15为304不锈钢 材质，所述放电层13厚度为3mm，所述绝缘层14厚度为50mm，所述屏蔽层15厚度为3mm，通孔11数量为多个，多个通孔11沿玻璃容器2圆心方向均布。
本发明还提供了一种石墨烯表面等离子体改性处理方法，它包括以下步骤：
步骤一：将待处理的石墨烯装入玻璃容器2内，关闭容器封头3和真空室封头4，启动抽气控制***，保持真空室1的本底真空度0.01－1Pa；
步骤二：打开通气控制***，向真空室1内充入混合气体，维持真空室1的抽气和充气状态，使真空室1内的工作真空度保持稳定在10～20Pa，开启射频电源***9，使辉光放电区束缚在玻璃容器2内；
步骤三：开启主动电机8，通过旋转轴7传动使玻璃容器2旋转，带动玻璃容器2内部放置的石墨烯在辉光放电区连续翻滚，处理时间为2-5min，放电射频功率为80－120W；
步骤四：处理完成后，关闭射频电源***9、通气控制***和抽气控制***，通入空气至大气压，取出处理后的石墨烯。
本实施例所述步骤二中混合气体为氧气和氦气，氧气和氦气的体积比为10:1－5:1。
以上对本发明所提供的一种石墨烯表面等离子体改性处理装置及处理方法，进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (10)

  1. 一种石墨烯表面等离子体改性处理装置，其特征在于：它包括真空室(1)、玻璃容器(2)、射频电源***(9)、对电极(10)和旋转机构，所述真空室(1)为卧式结构，所述真空室(1)上开设有充气孔(5)和抽气孔(6)，所述对电极(10)与射频电源***(9)相连，所述对电极(10)为圆弧形结构，内侧圆弧部分为放电层(13)，中间部分为绝缘层(14)，外侧圆弧部分为屏蔽层(15)，所述对电极(10)中间放置圆筒形玻璃容器(2)，所述对电极(10)通过聚四氟乙烯块(12)固定在真空室(1)内壁上，并与玻璃容器(2)中心同轴，所述玻璃容器(2)与旋转机构相连，所述玻璃容器(2)一端设置有通孔(11)。
  2. 根据权利要求1所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述真空室(1)上开设有屏蔽式观察窗，所述真空室(1)包括真空室本体和真空室封头(4)，所述真空室本体和真空室封头(4)为可拆卸连接。所述真空室(1)为卧式矩形结构，长度为1500mm，宽度为1200mm，高度为1000mm。
  3. 根据权利要求1所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述玻璃容器(2)包括容器本体和容器封头(3)，所述容器本体和容器封头(3)为可拆卸连接。所述玻璃容器(2)长度为1000mm，内径为600mm，厚度为5mm。
  4. 根据权利要求1所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述充气孔(5)与通气控制***相连，所述抽气孔(6)与抽气控制***相连。
  5. 根据权利要求1所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述旋转机构包括旋转轴(7)和主动电机(8)，所述主动电机(8)的输出端与旋转轴(7)相连，所述旋转轴(7)与玻璃容器(2)相连。
  6. 根据权利要求1所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述射频电源***(9)的最大功率为1000W，频率为13.56MHz。
  7. 根据权利要求1所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述放电层(13)为304不锈钢材质，所述绝缘层(14)为聚四氟乙烯材质，所述屏蔽层(15)为304不锈钢材质。
  8. 根据权利要求7所述的一种石墨烯表面等离子体改性处理装置，其特征在于：所述放电层(13)厚度为3mm，所述绝缘层(14)厚度为50mm，所述屏蔽层(15)厚度为3mm。
  9. 一种如权利要求1所述的石墨烯表面等离子体改性处理装置的处理方法，其特征在于：它包括以下步骤：
    步骤一：将待处理的石墨烯装入玻璃容器(2)内，关闭容器封头(3)和真空室封头(4)，启动抽气控制***，保持真空室(1)的本底真空度0.01－1Pa；
    步骤二：打开通气控制***，向真空室(1)内充入混合气体，维持真空室(1)的抽气和充气状态，使真空室(1)内的工作真空度保持稳定在10～20Pa，开启射频电源***(9)，使辉光放电区束缚在玻璃容器(2)内；
    步骤三：开启主动电机(8)，通过旋转轴(7)传动使玻璃容器(2)旋转，带动玻璃容器(2)内部放置的石墨烯在辉光放电区连续翻滚，处理时间为2-5min，放电射频功率为80－120W；
    步骤四：处理完成后，关闭射频电源***(9)、通气控制***和抽气控制***，通入空气至大气压，取出处理后的石墨烯。
  10. 根据权利要求9所述的一种石墨烯表面等离子体改性处理方法，其特征在于：所述步骤二中混合气体为氧气和氦气，氧气和氦气的体积比为10:1－5:1。
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