WO2021020215A1 - 現像装置及び現像方法 - Google Patents
現像装置及び現像方法 Download PDFInfo
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- WO2021020215A1 WO2021020215A1 PCT/JP2020/028120 JP2020028120W WO2021020215A1 WO 2021020215 A1 WO2021020215 A1 WO 2021020215A1 JP 2020028120 W JP2020028120 W JP 2020028120W WO 2021020215 A1 WO2021020215 A1 WO 2021020215A1
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- substrate
- wafer
- developer
- airflow
- cleaning liquid
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Definitions
- This disclosure relates to a developing device and a developing method.
- the semiconductor device manufacturing process includes a photolithography process.
- a photolithography step a resist film is formed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) which is a substrate, a resist film is exposed according to a desired pattern, and a resist film is developed by supplying a developing solution.
- the resist pattern is formed.
- Patent Document 1 includes, as the above-mentioned developing apparatus, a nozzle for supplying a developing solution to a wafer and a nozzle for supplying an inert gas for temperature adjustment to a central portion of the wafer on which the developing solution is filled. The device is shown.
- the uniformity of the dimensions of the resist pattern formed on each part in the surface of the substrate can be improved. Providing technology.
- the developing apparatus of the present disclosure includes a substrate holding portion that holds a substrate on which an exposed resist film is formed on the surface.
- a cup that surrounds the substrate held by the substrate holding portion, An airflow forming portion that forms an airflow from the outside of the cup to the inside of the cup,
- a developer supply unit that supplies a developer to the surface of the substrate for development,
- a cleaning liquid supply unit that supplies the cleaning liquid to the surface of the developed substrate, and It is provided separately from the developer supply unit and the cleaning liquid supply unit, is located at the first position, covers a part of the substrate to which the developer is supplied, and is formed on the surface of the substrate.
- the uniformity of the dimensions of the resist pattern formed on each part in the surface of the substrate is increased. Can be done.
- a developing device 1 which is an embodiment of the developing device of the present disclosure will be described.
- a wafer W which is a circular substrate on which an exposed resist film is formed on the surface, is conveyed to the developing apparatus 1, and a developing process by supplying a developing solution and a cleaning process by supplying a cleaning solution are performed on the wafer W. It is done in order.
- the resist film described above will be described in detail.
- a light source for example, i-rays (light having a wavelength of 365 nm) emitted from a mercury lamp are exposed along a desired pattern.
- the resist designed to be exposed by the i-line may be configured so that the exposed region is melted and the unexposed region is cured by supplying the developing solution.
- the width of the convex portion of the resist pattern to be formed Becomes thinner. That is, the development is in progress.
- the developing apparatus 1 in order to prevent the mist generated by the liquid treatment from scattering, the inside of the cup described later for accommodating the wafer W is exhausted. Since the exhaust flow formed in the cup in this way becomes stronger at the peripheral edge portion than at the central portion of the wafer W, the temperature at the peripheral edge portion of the wafer W becomes relatively low. Under such circumstances, the developing apparatus 1 is configured to suppress temperature variations in the plane of the wafer W during development and to increase the uniformity of CD (Critical Dimension), which is the dimension of the resist pattern. There is.
- the developing apparatus 1 includes a spin chuck 11 which is a substrate holding portion that attracts and horizontally holds the central portion of the back surface of the wafer W, and the spin chuck 11 is connected to the rotating mechanism 13 via a rotating shaft 12.
- the spin chuck 11 is configured to be rotatable around a vertical axis while holding the wafer W.
- the diameter of the wafer W is, for example, 300 mm.
- the developing device 1 includes a cup 20 that surrounds the side circumference of the wafer W mounted on the spin chuck 11.
- the cup 20 is composed of an outer cup 21 and an inner cup 22 provided inside the outer cup 21.
- the outer cup 21 is formed in a square tube shape.
- the inner cup 22 is formed so that the upper side of the cylinder is inclined upward and inward, and the upper opening is narrower than the lower opening.
- the outer cup 21 is raised by the elevating mechanism 23
- the inner cup 22 moves up and down in conjunction with the outer cup 21.
- the cup 20 is located at a descending position shown by a solid line in FIG. 1 when the developer nozzle 41 moves on the wafer W in order to prevent interference with the developer nozzle 41 described later.
- the wafer moves to the ascending position shown by the dotted line in FIG. 1 to prevent the liquid from scattering to the surroundings due to the rotation of the wafer W during cleaning.
- a horizontal disk 14 surrounding the rotating shaft 12 is provided on the lower side of the spin chuck 11.
- Reference numeral 15 in the drawing is a lifting pin penetrating the disk 14, which is lifted and lowered by the lifting mechanism 16 and transfers the wafer W between the wafer W transport mechanism (not shown) and the spin chuck 11.
- a liquid receiving portion 24 is provided so as to form a concave portion over the entire outer circumference of the disk 14, and a drain port 25 is opened in the liquid receiving portion 24.
- a ring body 17 is provided on the peripheral edge of the disk 14 so that the upper end approaches the back surface of the wafer W and the dropped liquid is guided to the liquid receiving portion 24 in a vertical cross-sectional view mountain shape. ..
- the liquid receiving portion 24 is provided with an exhaust pipe 26 for exhausting the inside of the cup 20, and the downstream side of the exhaust pipe 26 is connected to the exhaust portion 28 via a damper 27.
- the exhaust section 28 is composed of, for example, an exhaust path of a factory where the developing device 1 is provided, and the displacement from the exhaust pipe 26 is changed by changing the opening degree of the damper 27 which is the displacement switching section. Will be done.
- the damper 27 is placed in either a high exhaust state in which the displacement per unit time in the cup 20 is large or a low exhaust state in which the displacement per unit time in the cup 20 is small. The opening degree is changed.
- the developing device 1 includes a developing solution nozzle 41 which is a developing solution supply unit that supplies the developing solution to the wafer W.
- the developer nozzle 41 is provided with a long slit-shaped discharge port 42 that opens downward and extends orthogonally to the moving direction of the developer nozzle 41, which will be described later.
- the developer nozzle 41 is connected to the developer supply mechanism 44 via the supply pipe 43.
- the supply mechanism 44 includes, for example, a valve, a mass flow controller, and a developer supply source.
- the developer nozzle 41 is connected to the moving mechanism 46 via the nozzle arm 45, and the moving mechanism 46 can move the developer nozzle 41 up and down and horizontally.
- 47 in the figure is a guide for the moving mechanism 46 to move horizontally
- 48 in the figure is a standby portion for waiting the developer nozzle 41 on the outside of the cup 20.
- the ring plate 61 is an airflow regulating member that regulates the airflow on the surface of the wafer W, adjusts the in-plane temperature distribution of the wafer W by regulating the airflow, and as described above, the uniformity of the resist pattern CD. To increase.
- the ring plate 61 is configured as a horizontal circular plate and is provided on the wafer W held by the spin chuck 11.
- a circular through hole 62 is opened in the central portion of the ring plate 61. Then, in a plan view, the center of the through hole 62 and the center of the wafer W overlap, and the end of the ring plate 61 and the end of the wafer W overlap.
- the lower surface of the ring plate 61 forms a horizontal plane facing the surface of the wafer W.
- the inner peripheral side surface of the ring plate 61 forming the through hole 62 and the outer peripheral side surface of the ring plate 61 are formed as vertical surfaces. Therefore, in the ring plate 61, the lower inner peripheral edge portion and the outer peripheral edge portion are each angular. Further, the hole edge portion of the through hole 62 of the ring plate 61 projects upward to form an annular protrusion 63.
- the size of the through hole 62 may be appropriately set so that the annular protrusion 63 is not provided.
- the ring plate 61 is connected to an elevating mechanism 65 provided on the outside of the plan view cup 20 via a connecting portion 64.
- the elevating mechanism 65 is shown above the cup 20 in FIG.
- the elevating mechanism 65 which is a moving mechanism, causes the ring plate 61 to be perpendicular to the lower position (the position shown by the solid line in FIG. 1) and the upper position above the lower position (the position shown by the dotted line in FIG. 1). Ascend and descend to.
- the ring plate 61 is a member provided separately from the developer nozzle 41 and the cleaning liquid nozzle 51.
- the ring plate 61 is configured to be movable independently of the developer nozzle 41 and the cleaning liquid nozzle 51 as in this example, or is provided with respect to the cup 20 as in the example described later. It means that it is fixed. That is, the ring plate 61 is not a member such as the nozzle arms 45 and 54 that moves with the movement of the developer nozzle 41 and the cleaning liquid nozzle 51.
- the height H1 from the surface of the wafer W to the lower surface of the ring plate 61 at the lower position (first position) is, for example, 2 mm.
- a part of the air supplied from the filter unit 31 toward the upper surface of the ring plate 61 flows outward on the upper surface of the ring plate 61, and the exhaust gas is exhausted. It is fed into the cup 20 being carried out and removed.
- the other part of the air supplied to the upper surface of the ring plate 61 flows inward through the upper surface of the ring plate 61, passes over the annular protrusion 63 and flows toward the through hole 62, and penetrates directly from the filter unit 31. It merges with the air supplied into the hole 62.
- the air supplied to the central portion of the wafer W becomes relatively large, and as a result, the airflow toward the central portion of the wafer W becomes relatively strong. Then, by being exposed to such an air flow, the temperature of the developing solution in the central portion of the wafer W is lowered. The air supplied to the central portion of the wafer W in this way is exhausted from the inside of the cup 20, so that the air passes through the gap between the ring plate 61 and the wafer W and heads toward the peripheral end of the wafer W.
- the air supplied from the filter unit 31 becomes an air flow that collects in the center of the wafer W, and the relatively height that flows from the center of the wafer W to the periphery of the wafer W becomes relatively high.
- the flow is regulated so that the airflow is low.
- the height H2 from the surface of the wafer W to the lower surface of the ring plate 61 at the upper position (second position) is, for example, 200 mm.
- This upper position is set as a position that does not interfere with the developer nozzle 41, the cleaning liquid nozzle 51, and the nozzle arms 45 and 54 that move on the wafer W, respectively.
- the distance between the ring plate 61 and the wafer W is relatively long, so that the air supplied to the upper surface of the ring plate 61 wraps around the lower surface of the ring plate 61 and forms a downdraft. It is supplied to the entire surface of W.
- the developing apparatus 1 includes a control unit 100 configured by, for example, a computer.
- the control unit 100 includes a program, and the control unit 100 sends a control signal to each unit of the developing device 1.
- the developer is supplied from the developer supply mechanism 44
- the cleaning liquid is supplied from the cleaning liquid supply mechanism 53
- the rotation speed of the wafer W by the rotating mechanism 13
- the raising and lowering of the ring plate 61 by the raising and lowering mechanism 65
- the lifting of the lifting pin 15 is controlled by.
- the movement of the developer nozzle 41 by the moving mechanism 46, the movement of the cleaning liquid nozzle 51 by the moving mechanism 55, the change of the opening degree of the damper 27, and the like are controlled by the control signal.
- FIG. 3 shows the outline of the change in the rotation speed of the wafer W, the timing when the developer D is supplied from the developer nozzle 41, the timing when the developer R is supplied from the developer nozzle 51, and the ring plate 61.
- the position and the change in the displacement in the cup 20 due to the exhaust pipe 26 are shown.
- the processing sequence shown in FIG. 3 may be referred to as the first processing sequence.
- FIGS. 4 to 6 the airflow formed around the wafer W and the ring plate 61 is indicated by an arrow.
- the wafer W is conveyed to the developing apparatus 1 in a state where clean air is supplied downward from the filter unit 31, the inside of the cup 20 is exhausted with low exhaust gas, and the ring plate 61 is arranged at the upper position, and the spin chuck is used. It is held at 11.
- the developer nozzle 41 moves from the standby unit 48 onto one end of the wafer W in a stationary state without rotating, the developer nozzle 41 starts discharging the developer D, and the developer nozzle 41 discharges the developer. While being discharged, it moves horizontally toward the other end of the wafer W. As a result, a paddle (liquid pool) of the developing solution D is formed on the surface of the wafer W (time t1 in the chart, FIG. 4).
- the exhaust in the cup 20 forms a stronger (higher speed) exhaust flow than the central portion of the wafer W.
- the developer D at the peripheral edge of the wafer W has a relatively low temperature.
- the ring plate 61 at the upper position moves to the lower position, and the air flowing into the through hole 62 of the ring plate 61 is relatively strong as described above. Form an air flow.
- the temperature of the developing solution in the central portion of the wafer W decreases, and as a result, the temperature of the developing solution D becomes uniform between the central portion and the peripheral portion of the wafer W, and the temperature of the developing solution D becomes uniform and in-plane of the wafer W.
- Development proceeds so that the reaction speeds are uniform as a whole (time t2, FIG. 5).
- the ring plate 61 returns to the upper position, and then the developer nozzle 51 moves from the standby area 57 onto the center of the wafer W, the developer R is discharged to the center, and the wafer W rotates.
- the developer D is removed from the surface of the wafer W.
- the air supplied from the filter unit 31 wraps around from the upper side to the lower side of the ring plate 61 to form a downdraft toward the wafer W, and is supplied to the entire surface of the wafer W.
- This downdraft suppresses the mistized developer D and cleaning solution R from being pushed into the cup 20 and scattered outside the cup 20 (time t3, FIG. 6).
- the exhaust in the cup 20 is maintained in a high exhaust state from the time when the ring plate 61 is arranged at the lower position.
- the ring plate 61 is arranged at a lower position close to the wafer W in a state where a pool of developer is formed on the entire surface of the wafer W, and the central portion of the wafer W is a relatively strong air flow.
- the temperature in the central part is lowered by being exposed to.
- the temperature of the developer in the central portion of the wafer W is aligned with the temperature of the developer in the peripheral portion of the wafer W whose temperature is lowered by the exhaust in the cup 20, and between the central portion and the peripheral portion of the wafer W.
- the reaction between the resist and the developer proceeds in the same manner.
- a resist pattern can be formed so that the uniformity of the CD is high in each in-plane portion of the wafer W. Further, the temperature of the developing solution on the entire surface of the wafer W is further lowered by being exposed to the air flow from the central portion to the peripheral portion of the wafer W formed by the ring plate 61 arranged at the lower position. Therefore, the development proceeds rapidly. Therefore, it is possible to shorten the time from the formation of the developer pool to the start of the cleaning process, so that a high throughput can be obtained for the developing device 1.
- the developer 1 is provided with the developer nozzle 49 shown in FIG. 8 instead of the developer nozzle 41.
- the developer nozzle 49 is provided with a small-diameter discharge port in order to locally supply the developer to the wafer W.
- the ring plate 61 is placed in a lower position before supplying the developer D to the wafer W. Then, as shown in FIG. 8, the developer D is discharged from the developer nozzle 49 to the center of the wafer W, the wafer W is rotated, and the developer D is spread to the peripheral edge of the wafer W by centrifugal force.
- the developer D is supplied to the entire surface of the wafer W to form a paddle, the discharge of the developer D and the rotation of the wafer W are stopped, and the developer nozzle 49 is retracted to the standby unit 48. Then, the development proceeds while the ring plate 61 is positioned at the lower position.
- the second processing sequence is the same as that of the first processing sequence, except that the wafer W rotates when the ring plate 61 moves downward and the developer is supplied.
- the display of the timing for switching the exhaust gas is omitted, but the exhaust gas is switched at the same timing as the first processing sequence, for example.
- the second processing sequence described above is performed, the same effect as when the first processing sequence is performed can be obtained.
- the period during which the developer is discharged from the developer nozzle to the wafer W is the developer supply period, the supply of the developer from the developer nozzle to the wafer W is stopped, and the supply of the cleaning solution to the wafer W is started.
- the period until the process is completed is the paddle development period, and the period after the time when the supply of the cleaning solution is started is the cleaning period.
- the ring plate 61 is arranged at the lower position not only during the paddle development period but also during the developer supply period, the temperature at the center of the wafer W is more reliably lowered immediately after the start of development. To promote development.
- the developer nozzle 49 is used instead of the developer nozzle 41 in this second processing sequence
- the developer is on one end side of the wafer W.
- the timing of supply to the other end of the wafer W and the timing of supply to the other end side of the wafer W will be different.
- the ring plate 61 is already placed at the lower position when the developer is supplied, so that the wafer W is exposed to a relatively strong air flow and cooled, and the development proceeds rapidly. There is.
- the developer The nozzle 49 is used to form a paddle so that the developer spreads from the center of the wafer W.
- FIG. 1 A timing chart showing a third processing sequence in the developing apparatus 1 is shown in FIG.
- This third processing sequence is performed using the developer nozzle 49 in substantially the same manner as the second processing sequence.
- the difference from the second processing sequence is that the discharge of the developer from the developer nozzle 49 is stopped and the ring plate 61 at the lower position is moved to the upper position. That is, in the third processing sequence, the ring plate 61 is arranged at the lower position only during the developer supply period.
- the time for the ring plate 61 to be positioned at the lower position may be relatively short as in this third processing sequence.
- the developer may be supplied using the developer nozzle 49.
- the wafer W can be rotated to form a paddle of the developer over the entire wafer W.
- the wafer W is rotated when the developer nozzle 49 is used, the wafer W is not rotated and the wettability of the developer on the surface of the wafer W is utilized to rotate the wafer W from the center to the periphery.
- the developer may be spread over the portion to form a paddle.
- a developer nozzle in addition to the developer nozzles 41 and 71, for example, a developer nozzle provided with a slightly wide discharge port so as to extend along the radial direction of the wafer W may be used.
- a paddle of the developer can be formed on the entire surface of the wafer W.
- the developer nozzle if necessary, it is sufficient that the developer can be supplied to the entire surface of the wafer W by using the rotation of the wafer W, and the developer nozzles 41 and 71 described above are used. Is not limited.
- the developer supply period may be set to high exhaust and the paddle development period may be set to low exhaust, or the developer supply period may be maintained in a high exhaust state from the start of the developer supply period to the end of the cleaning period.
- the developer nozzle 41 it is preferable to reduce the exhaust gas at least during the developer supply period in order to prevent the influence of the exhaust gas.
- the exhaust gas it is preferable to set the exhaust gas to a high level in order to prevent the mist from scattering as described above.
- the switching between low exhaust and high exhaust is not limited to the end of the developer supply period or the end of the paddle development period, and the in-plane temperature distribution of the wafer W is appropriate. As such, it may be performed at a timing deviated from these end points.
- the exhaust is switched when the ring plate 61 is located at the lower position, the airflow on the surface of the wafer W changes significantly, and the paddle of the developing solution may shake. Therefore, it is preferable to switch the exhaust gas when the ring plate 61 is moving between the lower position and the upper position or is located at the upper position. Therefore, it is preferable to switch the exhaust at the timing described in the first processing sequence.
- the timing of raising and lowering the ring plate 61 is not limited to the above-mentioned example.
- the paddle development period in the first processing sequence, an example in which the paddle development period is fixed at the lower position is shown, but when the paddle development period is started, the paddle may be gradually lowered from the upper position to the lower position. Similarly, during the developer supply period, it may be lowered from the upper position to the lower position in this way. Further, the movement from the upper position to the lower position and the movement from the lower position to the upper position may be performed step by step. That is, the ring plate 61 may rest at an intermediate position between the upper position and the lower position while the ring plate 61 is moving from one of the upper position and the lower position toward the other.
- the inner peripheral edge portion and the outer peripheral edge portion are angular, respectively. Since the inner peripheral edge of the ring plate 61 is angular in this way, the airflow passing through the through hole 62 of the ring plate 61 located at the lower position is prevented from spreading in the lateral direction at the center of the wafer W. Is supplied to. Since the spread is prevented and the airflow is concentrated and supplied to the central portion of the wafer W, the airflow becomes stronger, and as a result, the temperature of the developer in the central portion of the wafer W is lowered.
- the ring plate 61 can be appropriately deformed and used so that the CD of the pattern is more uniform in the plane of the wafer W.
- the lower surface of the inner peripheral edge portion of the ring plate 61 shown in FIG. 10 is continuous with the inner peripheral surface of the through hole 62, and descends from the inner peripheral surface toward the peripheral edge side of the ring plate to approach the wafer W. It is configured as an inclined surface 66 of 1. By flowing along the first inclined surface 66, the airflow passing through the through hole 62 is suppressed from being excessively concentrated in the central portion of the wafer W, so that the developing solution in the central portion of the wafer W is suppressed. The temperature drop is mitigated.
- the lower surface of the outer peripheral edge portion of the ring plate 61 shown in FIG. 11 is formed so as to be continuous with the horizontal plane inside the outer peripheral edge portion, and rises toward the peripheral end of the ring plate 61 to form a wafer. It is configured as a second inclined surface 67 away from W. Due to the second inclined surface 67, the distance between the peripheral portion of the wafer W and the ring plate 61 is increased, so that the velocity of the air flow at the peripheral portion of the wafer W is suppressed, and the temperature of the developing solution at the peripheral portion of the wafer W is suppressed.
- the first inclined surface 66 and the second inclined surface 67 may be formed so as to be a curved line in a vertical cross-sectional view of the ring plate 61, or may be formed so as to be a straight line.
- FIG. In each figure of FIG. 12, it is shown as forming a curve.
- the airflow regulating member is not limited to being configured as a ring plate.
- a shower plate 72 that covers the wafer W and has a plurality of through holes 71 limited to the central portion may be provided in the developing device 1 instead of the ring plate 61 as an airflow regulating member.
- FIG. 14 shows a plan view of the shower plate 72.
- the peripheral portion of the lower surface of the shower plate 72 may be provided with the above-mentioned second inclined surface 67.
- the ring plate 61 may be configured to move between the upper region of the wafer W and the outer region laterally displaced from the upper region.
- the ring plate 61 is connected to a rotation mechanism 73 for rotating the ring plate 61 in order to perform such movement.
- the ring plates 61 are arranged in the upper region at the timing described as being arranged in the lower position in each of the above-described processing sequences, and in the outer region at the timing described as being arranged in the upper position, respectively, to perform processing. be able to.
- the ring plate 61 is not limited to moving up and down.
- the progress of the development of the resist film exposed by the i-line is affected by the temperature, but the progress of the development of the resist film exposed by the light of a wavelength other than the i-line is also affected by the temperature. receive. Therefore, when developing a resist film that is not exposed by i-rays, if development is performed without using the ring plate 61, the wafer W may be affected by factors such as the temperature distribution of the environment in which the developing apparatus is placed. It is conceivable that the development may proceed more in the peripheral portion than in the central portion. In such a case, the ring plate 61 can be used to improve the in-plane resist pattern CD uniformity. That is, the developing apparatus 1 is preferably used when developing a resist film exposed by i-rays, but its use is not limited to developing the resist film.
- the developing apparatus 8 will be described with reference to FIGS. 16 and 17.
- the difference between the developing device 8 and the developing device 1 is that a disk 81 is provided instead of the ring plate 61 as an airflow regulating member.
- the diameter of the disk 81 is smaller than the diameter of the wafer W, and the center of the plan view disk 81 and the center of the wafer W are aligned with each other. Therefore, the disk 81 is formed so as to limitly cover the central portion of the wafer W.
- a wafer W having a resist film exposed on its surface, for example, exposed by a KrF (Krypton difluoride) excimer laser, is conveyed to the developing apparatus 8.
- the resist film is exposed to light having a wavelength of 248 nm.
- the resist exposed by the KrF excimer laser does not cure the unexposed region due to the supply of the developing solution, unlike the resist exposed by the i-line described above, for example. Due to such a property, the width of the convex portion of the resist pattern becomes larger when the temperature of the wafer W is lower during development. That is, the development is difficult to proceed.
- the airflow regulating member is not limited to a plate, and for example, a block-shaped member having a relatively large thickness may be used.
- the gas supplied to the wafer W is not limited to air, and may be an inert gas such as nitrogen. It is sufficient that this gas is supplied to the outside of the cup 20 and an air flow from the outside of the cup 20 toward the wafer W in the cup 20 can be formed, and the gas is not limited to being supplied from above the wafer W by the filter unit 31. However, in order to suppress the scattering of mist, it is preferable to supply the wafer W from above to ensure that a downdraft can be formed.
- the ring plate 61 is raised and lowered with respect to the wafer W, but the cup 20, the spin chuck 11 and the rotation mechanism 13 are connected to the raising and lowering mechanism to raise and lower the wafer W with respect to the ring plate 61.
- the supply of the developing solution is stopped after the paddle is formed in each processing sequence, the supply of the developing solution may be continued until immediately before the cleaning solution is supplied, and the ring plate 61 may be moved up and down during this supply.
- the evaluation test 1 the wafer W having a diameter of 300 mm was processed using the developing apparatus 1 described above. During this process, the ring plate 61 was placed above the wafer W while the wafer W and the developer were in contact with each other. Then, after the treatment, the CD of the resist pattern was measured at each position along the radius of the wafer W. More specifically, the CD is the width of the convex portion constituting the resist pattern.
- a comparative test 1 a test substantially similar to that of the evaluation test 1 was performed, and a CD was obtained.
- the graph of FIG. 18 shows the results of the evaluation test 1 and the comparative test 1.
- the horizontal axis of the graph shows the distance from the center of the wafer W (unit: mm), and the vertical axis shows the standardized CD. ..
- the difference in the evaluation test 1 is smaller. That is, the evaluation test 1 has a higher uniformity of CD in the plane of the wafer W than the comparative test 1, and therefore, the effect of this technique is shown from this test result.
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Abstract
Description
前記基板保持部に保持された前記基板を囲むカップと、
前記カップの外側から当該カップ内へ向かう気流を形成する気流形成部と、
前記基板の表面に現像液を供給して現像する現像液供給部と、
現像された前記基板の表面に洗浄液を供給する洗浄液供給部と、
前記現像液供給部及び前記洗浄液供給部とは別個に設けられ、第1の位置に位置して前記現像液が供給された基板の一部を限定的に覆い、当該基板の表面に形成される気流を規制するための気流規制部材と、
前記洗浄液が前記基板に供給されたときに前記気流規制部材を前記第1の位置とは異なる第2の位置に位置させる移動機構、または前記第1の位置は前記カップの外側の位置であり、前記洗浄液が基板に供給されているときにおいても前記気流規制部材が当該第1の位置に位置することと、
を含む。
20 カップ
27 ダンパー
31 フィルタユニット
41 現像液ノズル
51 洗浄液ノズル
61 リングプレート
Claims (16)
- 露光済みのレジスト膜が表面に形成された基板を保持する基板保持部と、
前記基板保持部に保持された前記基板を囲むカップと、
前記カップの外側から当該カップ内へ向かう気流を形成する気流形成部と、
前記基板の表面に現像液を供給して現像する現像液供給部と、
現像された前記基板の表面に洗浄液を供給する洗浄液供給部と、
前記現像液供給部及び前記洗浄液供給部とは別個に設けられ、第1の位置に位置して前記現像液が供給された基板の一部を限定的に覆い、当該基板の表面に形成される気流を規制するための気流規制部材と、
前記洗浄液が前記基板に供給されたときに前記気流規制部材を前記第1の位置とは当該基板に対して相対的に異なる第2の位置に位置させる移動機構、または前記第1の位置は前記カップの外側の位置であり、前記洗浄液が基板に供給されているときにおいても前記気流規制部材が当該第1の位置に位置することと、
を含む現像装置。 - 前記気流規制部材は、前記カップ内へ向かう気流を前記基板の中心部に導入する貫通孔を備える請求項1記載の現像装置。
- 前記気流規制部材は、前記基板の周に沿って形成された環状体である請求項2記載の現像装置。
- 前記環状体の下面は、前記貫通孔を形成する内周面に連続すると共に当該内周面から当該環状体の周縁側に向かうにつれて前記基板に近づく第1の傾斜面を備える請求項3記載の現像装置。
- 前記気流規制部材の周縁部の下面は、当該気流規制部材の周縁に向かうにつれて前記基板から離れる第2の傾斜面を含む請求項2記載の現像装置。
- 前記レジスト膜は、i線により露光されたレジスト膜である請求項1記載の現像装置。
- 前記気流規制部材は、前記基板の中心部を限定的に覆う請求項1記載の現像装置。
- 前記移動機構が設けられる請求項1記載の現像装置。
- 前記気流規制部材は、前記現像液供給部による前記基板への現像液の供給が終了してから前記洗浄液供給部による前記基板へ前記洗浄液の供給が開始されるまでの第1の期間において、前記第1の位置に位置する請求項8記載の現像装置。
- 前記気流規制部材は、前記現像液供給部による前記基板への現像液の供給が行われる第2の期間において、第2の位置に位置する請求項9記載の現像装置。
- 前記気流形成部は、前記カップ内の単位時間あたりの排気量を切り替える排気量切り替え部を含み、
第2の期間に比べて第1の期間における前記排気量が大きくなるように前記排気量切り替え部が動作する請求項10記載の現像装置。 - 前記気流規制部材は、前記現像液供給部による前記基板への現像液の供給が行われる第2の期間において、前記第1の位置に位置する請求項8記載の現像装置。
- 前記気流規制部材は、前記現像液供給部による前記基板への現像液の供給が開始される前に前記第1の位置に位置する請求項12記載の現像装置。
- 前記気流規制部材は、前記現像液供給部による前記基板へ現像液の供給が終了してから前記洗浄液供給部による前記基板へ前記洗浄液の供給が開始されるまでの第1の期間において、前記第2の位置に位置する請求項12記載の現像装置。
- 前記第2の位置は、前記第1の位置に対して上方の位置である請求項1記載の現像装置。
- 露光済みのレジスト膜が表面に形成された基板を基板保持部により保持する工程と、
カップにより前記基板保持部に保持された前記基板を囲む工程と、
気流形成部により前記カップの外側から当該カップ内へ向かう気流を形成する工程と、
現像液供給部により前記基板の表面に現像液を供給して現像する工程と、
洗浄液供給部により前記現像された基板の表面に洗浄液を供給する工程と、
前記現像液供給部及び前記洗浄液供給部とは別個に設けられると共に第1の位置に位置する気流規制部材により、前記現像液が供給された基板の一部を限定的に覆い、当該基板の表面に形成される気流を規制する工程と、
移動機構により、前記洗浄液が前記基板に供給されたときに前記気流規制部材を前記第1の位置とは当該基板に対して相対的に異なる第2の位置に位置させる工程、または前記第1の位置は前記カップの外側の位置であり、前記洗浄液が基板に供給されているときにおいても前記気流規制部材を当該第1の位置に位置させる工程と、
を含む現像方法。
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JPH09148231A (ja) * | 1995-11-16 | 1997-06-06 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
JP2001118790A (ja) * | 1999-08-12 | 2001-04-27 | Tokyo Electron Ltd | 現像装置、基板処理装置及び現像方法 |
JP2001160532A (ja) * | 1999-12-02 | 2001-06-12 | Tokyo Electron Ltd | 基板処理装置 |
JP2008210872A (ja) * | 2007-02-23 | 2008-09-11 | Sokudo:Kk | 基板現像方法と現像装置と基板処理装置 |
JP2016081964A (ja) * | 2014-10-10 | 2016-05-16 | 東京エレクトロン株式会社 | 現像装置、現像方法及び記憶媒体 |
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JPH09148231A (ja) * | 1995-11-16 | 1997-06-06 | Dainippon Screen Mfg Co Ltd | 回転式基板処理装置 |
JP2001118790A (ja) * | 1999-08-12 | 2001-04-27 | Tokyo Electron Ltd | 現像装置、基板処理装置及び現像方法 |
JP2001160532A (ja) * | 1999-12-02 | 2001-06-12 | Tokyo Electron Ltd | 基板処理装置 |
JP2008210872A (ja) * | 2007-02-23 | 2008-09-11 | Sokudo:Kk | 基板現像方法と現像装置と基板処理装置 |
JP2016081964A (ja) * | 2014-10-10 | 2016-05-16 | 東京エレクトロン株式会社 | 現像装置、現像方法及び記憶媒体 |
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