WO2020252995A1 - 显示面板及其制备方法 - Google Patents

显示面板及其制备方法 Download PDF

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Publication number
WO2020252995A1
WO2020252995A1 PCT/CN2019/111327 CN2019111327W WO2020252995A1 WO 2020252995 A1 WO2020252995 A1 WO 2020252995A1 CN 2019111327 W CN2019111327 W CN 2019111327W WO 2020252995 A1 WO2020252995 A1 WO 2020252995A1
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WO
WIPO (PCT)
Prior art keywords
layer
display panel
light
thin film
film transistor
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PCT/CN2019/111327
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English (en)
French (fr)
Inventor
孙佳佳
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/629,318 priority Critical patent/US20210408456A1/en
Publication of WO2020252995A1 publication Critical patent/WO2020252995A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • This application relates to the packaging technology of the display panel, and in particular to a display panel and a manufacturing method thereof.
  • Light Emitting Diode Organic Light Emitting Diode
  • the OLED panel can be made into a flexible display screen that can be bent on a flexible substrate, which is a huge advantage of the OLED display panel.
  • the current OLED display panel mainly includes a substrate, a thin film transistor layer, a light-emitting layer, and a thin-film packaging structure.
  • the process time for the evaporation of the light-emitting layer to form a film is very long, which is not conducive to the mass production of the display panel.
  • the current OLED display panel mainly includes a substrate, a thin film transistor layer, a light-emitting layer, and a thin-film packaging structure.
  • the process time for the evaporation of the light-emitting layer to form a film is very long, which is not conducive to the mass production of the display panel.
  • the present application provides a display panel and a manufacturing method thereof, and a display device.
  • the display panel includes: a substrate; a thin film transistor layer disposed on the substrate; and a light emitting layer disposed on the thin film Transistor layer; wherein, the light-emitting layer includes a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode, a cover layer, and an inorganic layer, which are sequentially stacked;
  • the preparation time of the inorganic layer in the light-emitting layer is short, which is beneficial to the mass production of the display panel.
  • the present application provides a display panel, which includes: a substrate; a thin film transistor layer disposed on the substrate; a light emitting layer disposed on the thin film transistor layer; wherein the light emitting layer includes stacked layers The hole injection layer, the hole transport layer, the electroluminescence layer, the electron transport layer, the electron injection layer, the cathode, the covering layer and the inorganic layer; the material of the inorganic layer is silicon oxide, silicon nitride or silicon oxynitride; The refractive index of the inorganic layer is lower than the refractive index of the cover layer; and the display panel further includes an encapsulation film layer; the encapsulation film layer covers the light-emitting layer, and the encapsulation film layer covers the light-emitting layer, The thin film transistor layer and the substrate.
  • the present application also provides a display panel.
  • the display panel includes: a substrate; a thin film transistor layer disposed on the substrate; a light emitting layer disposed on the thin film transistor layer; wherein the light emitting layer includes A hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode, a cover layer and an inorganic layer are stacked in sequence.
  • the material of the inorganic layer is any one of silicon oxide, silicon nitride, and silicon oxynitride.
  • the display panel further includes an encapsulation film layer; the encapsulation film layer covers the light-emitting layer, and the encapsulation film layer covers the light-emitting layer, the thin film transistor layer, and the Substrate.
  • the material of the encapsulation film layer is an organic insulating material
  • the organic insulating material is any one of an array organic insulating film, an acrylic resin, and a siloxane resin.
  • the material of the encapsulation film layer is an organic insulating material
  • the organic insulating material is at least two of an array organic insulating film, an acrylic resin, and a siloxane resin.
  • the present application also provides a method for manufacturing a display panel.
  • the method includes: providing a substrate; preparing a thin film transistor layer on the substrate; preparing a light emitting layer on the thin film transistor layer; wherein the light emitting layer includes successively A hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode, a cover layer, and an inorganic layer are stacked.
  • the method further includes: preparing an encapsulation film layer on the light-emitting layer, the encapsulation film layer covering the A light-emitting layer, and the packaging film layer covers the light-emitting layer, the thin film transistor layer and the substrate.
  • the preparing a light-emitting layer on the thin film transistor layer specifically includes: preparing a hole injection layer on the thin film transistor layer; Preparing a hole transport layer on the hole transport layer; preparing an electron transport layer on the hole transport layer; preparing an electron injection layer on the electron transport layer; preparing a cathode film layer on the electron injection layer; and on the cathode film
  • the inorganic layer is evaporated on the layer.
  • the process for preparing the inorganic layer includes: evaporation, plasma enhanced chemical vapor deposition, plasma enhanced atomic layer deposition, atomic layer deposition or pulsed laser deposition.
  • the beneficial effect of the present application is that in the display panel provided by the present application, the preparation time of the inorganic layer in the light-emitting layer is short, which is beneficial to the mass production of the display panel.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • Fig. 2 is a schematic structural diagram of a light-emitting layer provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of another structure of a display panel provided by an embodiment of the application.
  • FIG. 4 is a schematic diagram of a manufacturing method of a display panel provided by an embodiment of the application.
  • FIG. 5 is a schematic diagram of the process of S30 in the method for manufacturing a display panel provided by an embodiment of the application.
  • the present application provides a display panel and a manufacturing method thereof.
  • the display panel includes: a substrate; a thin film transistor layer disposed on the substrate; a light emitting layer disposed on the thin film transistor layer; wherein the light emitting layer includes A hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode, a covering layer, and an inorganic layer are stacked in sequence, wherein the evaporation time of the inorganic layer in the light-emitting layer is short , Which is conducive to the mass production of display panels.
  • FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the application.
  • the display panel includes: a substrate 1; a thin film transistor layer 2 disposed on the substrate 1; and a light emitting layer 3 disposed on the thin film transistor 2 layer.
  • the substrate 1 is optionally a flexible substrate, and the flexible substrate cooperates with the thin film transistor layer 2 and the light emitting layer 3 to form a flexible display panel.
  • the material of the flexible substrate is not limited in this application. It can optionally be an organic polymer.
  • the organic polymer may be polyimide (PI), polyamide Adhesive, PA), Polycarbonate (PC), Polyethersulfone (PES), Polyethylene glycol Terephthalate (PET), Polyethylene naphthalate ( Polyethylene Naphthalate two formic acid glycol ester (PEN), polymethyl methacrylate (Poly Methyl Methacrylate, PMMA), cyclic olefin copolymer (COC).
  • the light-emitting layer 3 includes a hole injection layer 31 (Hole Inject Layer, HIL), hole transport layer 32 (Hole Transport Layer, HTL), electroluminescent layer 33 (Emitting Material Layer, EML), electron transport layer 34 (Electron Transport Layer, EHL), electron injection layer 35 (Electron Inject Layer, EIL), cathode 38 (Cathode), cover Layer 36 (Caping Layer, CPL) and inorganic layer 37.
  • HIL hole injection layer 31
  • HTL hole transport layer 32
  • electroluminescent layer 33 Electroluminescent layer 33 (Emitting Material Layer, EML), electron transport layer 34 (Electron Transport Layer, EHL), electron injection layer 35 (Electron Inject Layer, EIL), cathode 38 (Cathode), cover Layer 36 (Caping Layer, CPL) and inorganic layer 37.
  • the hole injection layer 31 serves as a buffer layer in the display panel, which can smooth the hole injection barrier between the thin film transistor layer 2 and the hole transport layer 32 in the display panel, effectively solving the interface of the light emitting layer 3 The problem of work function mismatch.
  • the electron injection layer 35 serves as a buffer layer in the display panel, which can smooth the electron injection barrier between the cathode and the electron transport layer 34 in the display panel, and effectively solve the problem of the interface work function mismatch of the light-emitting layer 3 .
  • the electroluminescent layer 33 emits light under the action of the anode 38, the hole injection layer 31, the hole transport layer 32, the electron transport layer 34, the electron injection layer 35 and the cathode 38 in the thin film transistor layer 2.
  • the material of the inorganic layer 37 is one or more combinations of silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiON).
  • the refractive index of the inorganic layer 37 is lower than the refractive index of the cover layer 36.
  • the material of the inorganic layer 37 can also be one or more combinations of materials such as metal oxide, metal nitride, metal sulfide, oxide semiconductor, or nitride semiconductor.
  • the light-emitting layer of the prior art display panel is a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer, and an electron injection layer which are sequentially stacked.
  • the lithium fluoride layer is generally formed on the surface of the cover layer in the form of vapor deposition, but in the manufacturing process of the display panel, the vapor deposition time of the lithium fluoride is relatively long, and the vapor deposition time occupies a large amount of time for preparing the light-emitting layer .
  • the embodiment of the present application proposes that the uppermost part of the light-emitting layer 3 is the inorganic layer 37, and in the case of the same thickness, the preparation time of the inorganic layer 37 in this embodiment is about the preparation time of the lithium fluoride layer in the prior art. 1/6 to 1/7, the display panel provided in this case has a short manufacturing process time, which improves the efficiency of the manufacturing process and facilitates mass production of display panels.
  • FIG. 3 is a schematic diagram of another structure of the display panel provided by the embodiments of the present application.
  • the display panel further includes an encapsulation film layer 4;
  • the packaging film layer 4 covers the light-emitting layer 3, and the packaging film layer 4 covers the light-emitting layer 3, the thin film transistor layer 2 and the sides of the substrate 1, and makes the substrate 1 wrap around Inside the packaging film layer 4.
  • the encapsulation film layer 4 serves as a protective layer, which can block the penetration and intrusion of water and oxygen, and improve the stability of the display panel provided in the embodiments of the present application in the air.
  • the material of the packaging film layer 4 may be an organic insulating material, and the organic insulating material is an array organic insulating film (Polymer One or more of Film on Array (PFA), Polymethyl Methacrylate (PMMA), and silicone resin.
  • the organic insulating material is an array organic insulating film (Polymer One or more of Film on Array (PFA), Polymethyl Methacrylate (PMMA), and silicone resin.
  • the embodiments of the present application also provide a method for manufacturing the display panel. Please refer to FIG. 4, which is a schematic diagram of the manufacturing method of the display panel provided by the embodiments of the present application.
  • the method includes:
  • a light-emitting layer on the thin film transistor layer wherein the light-emitting layer includes a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode, and a cover layer which are sequentially stacked.
  • the light-emitting layer includes a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode, and a cover layer which are sequentially stacked.
  • Layer and inorganic layer is sequentially stacked.
  • FIG. 5 is a schematic flowchart of S30 in the display panel manufacturing method provided by the embodiment of the application, and specifically includes:
  • the inorganic layer can be prepared by evaporation (Evaporation), plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor, PECVD), and plasma enhanced atomic layer (Plasma Enhanced Chemical Vapor, PECVD).
  • Evaporation plasma enhanced chemical vapor deposition
  • PECVD plasma enhanced atomic layer
  • ALD, PEALD atomic layer deposition
  • ALD Atomic Layer Deposition
  • PLD Pulsed Laser Deposition
  • step S30 it further includes:
  • An embodiment of the present application also provides a display device, which includes a driving circuit and any one of the above-mentioned display panels.
  • the display panel includes a substrate; a thin film transistor layer is provided on the substrate; a light emitting layer is provided on the thin film transistor layer; wherein, the light emitting layer includes a hole injection layer and a hole transport layer which are sequentially stacked , Electroluminescent layer, electron transport layer, electron injection layer, cathode, cover layer and inorganic layer.
  • the light-emitting layer of the display panel in the display device provided by the present application includes a hole injection layer, a hole transport layer, an electroluminescence layer, an electron transport layer, an electron injection layer, a cathode,
  • the preparation time of the inorganic layer in the light-emitting layer is short, which is beneficial to the mass production of the display panel.
  • the display panel and the manufacturing method thereof can be applied to thin film transistors (Thin Film Transistors) of Organic Light-Emitting Diodes (OLEDs).
  • Transistor, TFT Transistor, TFT technology development, or quantum dot light-emitting diode (Quantum Dot Light Emitting Diodes (QLED) TFT technology is under development, or micro diode TFT technology is under development.
  • QLED Quantum Dot Light Emitting Diodes
  • the display panel and the manufacturing method thereof can be applied to thin film transistors (Thin Film Transistors) of Organic Light-Emitting Diodes (OLEDs).
  • Transistor, TFT Transistor, TFT technology development, or quantum dot light-emitting diode (Quantum Dot Light Emitting Diodes (QLED) TFT technology is under development, or micro diode TFT technology is under development.
  • QLED Quantum Dot Light Emitting Diodes
  • the display panel provided in the embodiment of this application can also be applied to a display device, where the display device may be a liquid crystal (Liquid Crystal Display, abbreviated as LCD) display, can also be an electronic ink screen (e-ink) display.
  • LCD Liquid Crystal Display
  • e-ink electronic ink screen
  • AMOLED Active organic light-emitting diode
  • AMOLED can be fabricated on flexible substrates (Flexible Substrate) , Make the display bendable (Bendable and Foldable). Flexible displays bring more applicability and functionality to displays.
  • the biggest difference between a flexible display and a general flat-panel display in the module structure is that it cannot use a cover glass like a general flat-panel display because the glass has low bendability and is fragile during bending.
  • the cover window materials used in flexible displays today are all plastic materials (CPI).
  • CPI plastic materials
  • display products require the surface to be scratch-resistant and impact-resistant, and plastic materials are inherently not as hard as glass. Therefore, generally commercial plastic covers are coated with a harder scratch-resistant material (HC, Hard Coating), and claimed that such a cover structure can pass the pencil hardness test to more than 8H.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
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Abstract

本申请提供一种显示面板及其制备方法、显示装置，所述显示面板包括：一基板；一薄膜晶体管层，设置于所述基板上；一发光层，设置于所述薄膜晶体管层上；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。

Description

显示面板及其制备方法 技术领域
本申请涉及显示面板的封装技术，尤其涉及一种显示面板及其制备方法。
 背景技术
OLED(Organic Light Emitting Diode，简称有机发光二极管)器件因其较传统LCD相比具有重量轻巧，广视角，响应时间快，耐低温，发光效率高等优点，因此在显示行业一直被视其为下一代新型显示技术，特别是OLED面板可以在柔性基板上做成能弯曲的柔性显示屏，这更是OLED显示面板的巨大优势。
当前OLED显示面板主要包括基板、薄膜晶体管层、发光层和薄膜封装结构，然而，其发光层的蒸镀成膜的制程时间很长，不利于显示面板的量产。
 技术问题
当前OLED显示面板主要包括基板、薄膜晶体管层、发光层和薄膜封装结构，然而，其发光层的蒸镀成膜的制程时间很长，不利于显示面板的量产。
 技术解决方案
为达成上述目的，本申请提供一种显示面板及其制备方法、显示装置，所述显示面板包括：一基板；一薄膜晶体管层，设置于所述基板上；一发光层，设置于所述薄膜晶体管层上；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层；其中，所述发光层中的无机层的制备时间短，利于显示面板的量产。
本申请提供的技术方案如下：
本申请提供一种显示面板，其包括：一基板；一薄膜晶体管层，设置于所述基板上；一发光层，设置于所述薄膜晶体管层上；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层；所述无机层的材质为氧化硅、氮化硅或氮氧化硅；所述无机层的折射率低于所述覆盖层的折射率；以及所述显示面板还包括封装膜层；所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板。
本申请还提供一种显示面板，所述显示面板包括：一基板；一薄膜晶体管层，设置于所述基板上；一发光层，设置于所述薄膜晶体管层上；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。
在本申请提供的显示面板中，所述无机层的材质为氧化硅、氮化硅和氮氧化硅中的任意一种。
在本申请提供的显示面板中，所述显示面板还包括封装膜层；所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板。
在本申请提供的显示面板中，所述封装膜层的材料为有机绝缘材料，所述有机绝缘材料为阵列有机绝缘膜、亚克力树脂及硅氧烷树脂中的任意一种。
在本申请提供的显示面板中，所述封装膜层的材料为有机绝缘材料，所述有机绝缘材料为阵列有机绝缘膜、亚克力树脂及硅氧烷树脂中的至少两种。
本申请还提供一种显示面板的制备方法，所述方法包括：提供一基板；在所述基板上制备薄膜晶体管层；在所述薄膜晶体管层上制备发光层；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。
在本申请提供的一种显示面板的制备方法中，所述在所述薄膜晶体管层上制备发光层之后，还包括：在所述发光层上制备封装膜层，所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板。
在本申请提供的一种显示面板的制备方法中，所述在所述薄膜晶体管层上制备发光层，具体包括：在所述薄膜晶体管层上制备空穴注入层；在所述空穴注入层上制备空穴传输层；在所述空穴传输层上制备电子传输层；在所述电子传输层上制备电子注入层；在所述电子注入层上制备阴极膜层；以及在所述阴极膜层上蒸镀无机层。
在本申请提供的一种显示面板的制备方法中，所述制备无机层的工艺包括：蒸镀、等离子增强化学气相沉积、等离子增强原子层沉积、原子层沉积或脉冲激光沉积。
 有益效果
本申请的有益效果为：在本申请提供的显示面板中，所述发光层中的无机层的制备时间短，利于显示面板的量产。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的显示面板的结构示意图。
图2本申请实施例所提供的发光层的结构示意图。
图3为本申请实施例提供的显示面板的另一种结构示意图。
图4为本申请实施例所提供的显示面板的制备方法示意图。
图5为本申请实施例提供的显示面板制备方法中S30的流程示意图。
本申请的实施方式
本申请提供一种显示面板及其制备方法，所述显示面板包括：基板；薄膜晶体管层，设置于所述基板上；发光层，设置于所述薄膜晶体管层上；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层，其中，所述发光层中的无机层的蒸镀时间短，利于显示面板的量产。
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
需要说明的是，本发明附图中各层的厚度和形状不反映真实比例，目的只是示意说明本申请实施例内容。
请参见图1，该图1为本申请实施例所提供的显示面板的结构示意图。在该图1中，所述显示面板包括：基板1；薄膜晶体管层2，设置于所述基板1上；发光层3，设置于所述薄膜晶体管2层上。
在一些实施例中，基板1可选地为柔性基板，柔性基板与薄膜晶体管层2、发光层3相配合形成柔性显示面板。柔性基板的材料本申请不限制，可选地为有机聚合物，作为示例，有机聚合物可以是聚酰亚胺(Polyimide，PI)、聚酰胶(Polyamide Adhesive，PA)、聚碳酸酯(Polycarbonate，PC)、聚苯醚砜(Polyethersulfone，PES)、聚对苯二甲酸乙二醇酯(Polyethylene glycol Terephthalate，PET)、聚萘二甲酸乙二醇酯(Polyethylene Naphthalate two formic acid glycol ester，PEN)、聚甲基丙烯酸甲酯(Poly Methyl Methacrylate，PMMA)、环烯烃共聚物(COC)中的一种。
具体的，请参见图2，该图2本申请实施例所提供的发光层的结构示意图。在该图2中，该发光层3包括依次层叠设置的空穴注入层31(Hole Inject Layer，HIL)、空穴传输层32(Hole Transport Layer，HTL)、电致发光层33(Emitting Material Layer，EML)、电子传输层34(Electron Transport Layer,EHL)、电子注入层35(Electron Inject Layer，EIL)、阴极38(Cathode)、覆盖层36(Caping Layer，CPL)以及无机层37。
具体的，该空穴注入层31作为该显示面板中的缓冲层，可以平滑该显示面板中薄膜晶体管层2和空穴传输层32之间的空穴注入势垒，有效解决该发光层3界面功函数失配的问题。同理，该电子注入层35作为该显示面板中的缓冲层，可以平滑该显示面板中阴极和电子传输层34之间的电子注入势垒，有效解决该发光层3界面功函数失配的问题。且该电致发光层33在该薄膜晶体管层2中的阳极38、空穴注入层31、空穴传输层32、电子传输层34以及电子注入层35和阴极38的作用下发光显示。
在一些实施例中，所述无机层37的材质为氧化硅(SiOx)、氮化硅(SiNx)或者氮氧化硅(SiON)的一种或多种组合。所述无机层37的折射率低于所述覆盖层36的折射率。除此之外，该无机层37的材质还可以为金属氧化物、金属氮化物、金属硫化物、氧化物半导体或氮化物半导体等材料的一种或多种组合。
需要指出的是，在现有技术的显示面板中，现有技术显示面板的发光层中为依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及氟化锂层(LiF)。该氟化锂层一般采用蒸镀的形式形成于该覆盖层表面，但是在显示面板的制程中，该氟化锂的蒸镀时间较长，且该蒸镀时间占据制备该发光层的大量时间。因此，本申请实施例提出发光层3中最上面为无机层37，且在相同厚度的情况下，本实施例中的无机层37对应的制备时间约为现有技术中氟化锂层制备时间的1/6～1/7，故本案提供的显示面板制程时间短，提高了制程的效率，利于显示面板的量产。
在一些实施例中，请参见图3，该图3为本申请实施例提供的显示面板的另一种结构示意图。在该图3中，所述显示面板还包括封装膜层4；
所述封装膜层4覆盖所述发光层3，所述封装膜层4包覆所述发光层3、所述薄膜晶体管层2与所述基板1的侧边，并使所述基板1包裹于所述封装膜层4内。顾名思义，该封装膜层4作为保护层，能阻挡水氧的渗透、侵入，提高本申请实施例提供的显示面板在空气中的稳定性
在一些实施例中，该封装膜层4的材料可以为有机绝缘材料，所述有机绝缘材料为阵列有机绝缘膜(Polymer Film on Array，简称PFA)、亚克力树脂(Polymethyl Methacrylate，简称PMMA)、硅氧烷树脂中的一种或者多种。
在一些实施例中，本申请实施例还提供一种显示面板的制备方法，请参见图4，该图4为本申请实施例所提供的显示面板的制备方法示意图，该方法包括：
S10.提供基板；
S20.在所述基板上制备薄膜晶体管层；
S30.在所述薄膜晶体管层上制备发光层，其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。
进一步的，请参见图5，该图5为本申请实施例提供的显示面板制备方法中S30的流程示意图，具体包括：
S301.在所述薄膜晶体管层上制备空穴注入层；
S302.在所述空穴注入层上制备空穴传输层；
S303.在所述空穴注入层上制备电致发光层；
S304.在所述电致发光层上制备电子传输层；
S305.在所述电子传输层上制备电子注入层；
S306.在所述电子注入层上制备阴极膜层；
S307.在所述阴极膜层上制备覆盖层；
S308.在所述覆盖层上制备无机层。
需要说明的是，该步骤S308中，制备无机层可以采用蒸镀(Evaporation)的方式、等离子增强化学气相沉积(Plasma Enhanced Chemical Vapor，PECVD)、等离子增强原子层(Plasma Enhanced ALD，PEALD)、原子层沉积(Atomic Layer Deposition，ALD)、脉冲激光沉积(Pulsed Laser Deposition，PLD)或者其他的制备方法。
进一步的，在步骤S30之后，还包括：
S40.在所述发光层上制备封装膜层，所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板的侧边，并使所述基板包裹于所述封装膜层内。
本申请实施例还提供了一种显示装置，该显示装置包括驱动电路和上述任一项显示面板。其中，显示面板包括基板；薄膜晶体管层，设置于所述基板上；发光层，设置于所述薄膜晶体管层上；其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。
区别于现有技术，本申请提供的显示装置中的显示面板，其发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层，其所述发光层中的无机层的制备时间短，利于显示面板的量产。
在本实施例中，所述显示面板及其制备方法，可以应用于有机发光二极管(Organic Light-Emitting Diode，OLED)的薄膜晶体管(Thin Film Transistor，TFT)技术开发中，或量子点发光二极管(Quantum Dot Light Emitting Diodes，QLED)的TFT技术开发中，或微型二极管的TFT技术开发中。
在本实施例中，所述显示面板及其制备方法，可以应用于有机发光二极管(Organic Light-Emitting Diode，OLED)的薄膜晶体管(Thin Film Transistor，TFT)技术开发中，或量子点发光二极管(Quantum Dot Light Emitting Diodes，QLED)的TFT技术开发中，或微型二极管的TFT技术开发中。
除上述申请实施例所提供的显示面板外，本申请实施例提供的显示面板还能应用于显示装置上，其中显示装置可以是液晶(Liquid Crystal Display，简称LCD)显示器，也可以是电子墨水屏(e-ink)显示器。主动式有机发光二极体(AMOLED)显示器具有超高反应速度、广色域、高对比度等优势，已被认为是继液晶之后的下一世代显示器，且AMOLED可制作于柔性基板(Flexible Substrate)上，使得显示器具有可弯折(Bendable and Foldable)的特性。柔性显示器为显示器带来更多的应用性与功能性。
柔性显示器和一般平面显示器在模组段(Module)结构上最大的差异，就是不能像一般平面显示器那样使用玻璃盖板(Cover Glass)，因为玻璃的可弯折性低，弯折过程易碎。现今柔性显示器所使用的盖板(Cover Window)材料皆为塑胶类材质(CPI)。然而，显示器产品要求表面要能抗刮、抗冲击，而塑胶材质天生就不如玻璃来得硬，因此，一般商用塑胶盖板都会在塑胶表面涂布一层较硬的抗刮材质(HC，Hard Coating)，并声称这样的盖板结构可以通过铅笔硬度测试达8H以上。
然而，实际在使用此塑胶盖板于柔性显示器迭层结构后发现，铅笔硬度测试大幅降低为1H以下，8H硬度只在单独测试塑胶盖板的时候才会有如此水平。主要原因在于贴合柔性显示器各层所使用的光学透明胶(OCA)非常柔软，使得铅笔下压后坍陷的幅度比使用玻璃当盖板的情况来得严重许多。为了解决上述之现象，提高Hard Coating厚度应是有所助益。然而，提高Hard Coating厚度也会提升了弯曲刚度(Flexural Rigidity)，进而降低显示屏的弯折性(Foldability)，因此并非理想的解决方案。
除上述实施例外，本申请还可以有其他实施方式。凡采用等同替换或等效替换形成的技术方案，均落在本申请要求的保护范围。
综上所述，虽然本申请已将优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (11)

  1. 一种显示面板，其包括：
    一基板；
    一薄膜晶体管层，设置于所述基板上；
    一发光层，设置于所述薄膜晶体管层上；
    其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层；
    所述无机层的材质为氧化硅、氮化硅或氮氧化硅；
    所述无机层的折射率低于所述覆盖层的折射率；以及
    所述显示面板还包括封装膜层；
    所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板。
  2. 一种显示面板，其包括：
    一基板；
    一薄膜晶体管层，设置于所述基板上；以及
    一发光层，设置于所述薄膜晶体管层上；
    其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。
  3. 根据权利要求2所述的显示面板，其中所述无机层的材质为氧化硅、氮化硅和氮氧化硅中的任意一种。
  4. 根据权利要求2所述的显示面板，其中所述无机层的折射率低于所述覆盖层的折射率。
  5. 根据权利要求2所述的显示面板，其中所述显示面板还包括封装膜层；
    所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板。
  6. 根据权利要求5所述的显示面板，其中所述封装膜层的材料为有机绝缘材料，所述有机绝缘材料为阵列有机绝缘膜、亚克力树脂及硅氧烷树脂中的任意一种。
  7. 根据权利要求5所述的显示面板，其中所述封装膜层的材料为有机绝缘材料，所述有机绝缘材料为阵列有机绝缘膜、亚克力树脂及硅氧烷树脂中的至少两种。
  8. 一种显示面板的制备方法，其中所述方法包括：
    提供一基板；
    在所述基板上制备薄膜晶体管层；
    在所述薄膜晶体管层上制备发光层，其中，所述发光层包括依次层叠设置的空穴注入层、空穴传输层、电致发光层、电子传输层、电子注入层、阴极、覆盖层以及无机层。
  9. 根据权利要求8所述的制备方法，其中所述在所述薄膜晶体管层上制备发光层之后，还包括：
    在所述发光层上制备封装膜层，所述封装膜层覆盖所述发光层，所述封装膜层包覆所述发光层、所述薄膜晶体管层与所述基板。
  10. 根据权利要求8所述的制备方法，其中所述在所述薄膜晶体管层上制备发光层，具体包括：
    在所述薄膜晶体管层上制备空穴注入层；
    在所述空穴注入层上制备空穴传输层；
    在所述空穴传输层上制备电致发光层；
    在所述电致发光层上制备电子传输层；
    在所述电子传输层上制备电子注入层；
    在所述电子注入层上制备阴极膜层；
    在所述阴极膜层上制备覆盖层；以及
    在所述覆盖层上制备无机层。
  11. 根据权利要求10所述的制备方法，其中所述制备无机层的工艺包括：蒸镀、等离子增强化学气相沉积、等离子增强原子层沉积、原子层沉积或者脉冲激光沉积。
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