WO2020237651A1 - Mems capacitive sensor, preparation method thereof, and electronic device - Google Patents

Abstract

An MEMS capacitive sensor and a preparation method thereof. The sensor comprises a first electrode structure (200), and the first electrode structure (200) comprises a first conductive region (230a) located in a central region, and an insulation region (240) around the first conductive region. The first conductive region (230a) and the insulation region (240) are an integral structure, and at least one of the regions is formed by means of doping. The MEMS capacitive sensor performs electrical conduction by means of the first conductive region disposed in the central region of the first electrode structure, and provides insulation by means of the insulation region around the first conductive region, so as to reduce the parasitic capacitance of the MEMS capacitive sensor without requiring multiple layers of insulation films, thereby resolving the issue of complex residual-stress control, and avoiding the problem of peeling and bending of the multiple layers of films.

Description

MEMS电容传感器及其制备方法、电子设备MEMS capacitive sensor and its preparation method and electronic equipment 技术领域Technical field

本发明涉及MEMS技术领域，特别是涉及一种MEMS电容传感器及其制备方法、电子设备。The present invention relates to the field of MEMS technology, in particular to a MEMS capacitive sensor, a preparation method thereof, and electronic equipment.

背景技术Background technique

传统的MEMS(Micro-Electro-Mechanical System，微机电***)电容传感器中，常通过设置绝缘薄膜与导电材料堆栈或形成绝缘层-导电层-绝缘层的三明治结构，来达到绝缘的目的以降低寄生电容。这种实现方式容易出现残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题。In traditional MEMS (Micro-Electro-Mechanical System) capacitance sensors, insulating films and conductive materials are stacked or formed into a sandwich structure of insulating layer-conductive layer-insulating layer to achieve the purpose of insulation to reduce parasitic capacitance. This implementation is prone to problems such as complex residual stress control, multilayer film peeling and film bending.

发明内容Summary of the invention

根据本申请的各种实施例，提供一种MEMS电容传感器及其制备方法、电子设备。According to various embodiments of the present application, a MEMS capacitive sensor, a manufacturing method thereof, and electronic equipment are provided.

一种MEMS电容传感器，包括：A MEMS capacitive sensor, including:

第一电极结构，包括位于中间区域的第一导电区域以及所述第一导电区域周围的绝缘区域，所述第一导电区域和所述绝缘区域为一整体结构，且其中至少一个通过掺杂方式形成。The first electrode structure includes a first conductive region in the middle region and an insulating region around the first conductive region. The first conductive region and the insulating region are an integral structure, and at least one of them is doped form.

一种电子设备，包括电子设备本体，还包括设置于所述电子设备本体上的如上任一所述的MEMS电容传感器。An electronic device includes an electronic device body, and further includes the MEMS capacitive sensor as described above provided on the electronic device body.

一种MEMS电容传感器的制备方法，包括：A method for preparing a MEMS capacitive sensor includes:

形成第一电极结构；所述第一电极结构包括位于中间区域的第一导电区域以及所述第一导电区域周围的绝缘区域，所述第一导电区域和所述绝缘区域为一整体结构，且其中至少一个通过掺杂方式形成。A first electrode structure is formed; the first electrode structure includes a first conductive area located in the middle area and an insulating area around the first conductive area, the first conductive area and the insulating area are an integral structure, and At least one of them is formed by doping.

上述MEMS电容式传感器，通过在第一电极结构中设置其中间区域的第一导电区域导电，第一导电区域周围的绝缘区域绝缘，降低了该MEMS电容式传 感器的寄生电容，且相对于传统的MEMS电容式传感器，无需设置多层绝缘薄膜，不会造成残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题。In the above-mentioned MEMS capacitive sensor, the first conductive area in the middle area is provided in the first electrode structure to conduct electricity, and the insulating area around the first conductive area is insulated, which reduces the parasitic capacitance of the MEMS capacitive sensor and compares to the traditional The MEMS capacitive sensor does not need to set up a multilayer insulating film, and will not cause problems such as complex residual stress control, multilayer film peeling and film bending.

在一种实施例中，通过在中间区域掺杂硼，使第一导电区域为P型导电类型区或在中间区域掺杂磷，使第一导电区域为N型导电类型区，该MEMS电容器仅有中间区域的第一导电类型区导电，并和与其相对设置的第二电极结构形成电容结构，测量时，仅第一导电区域产生的形变能转化为电容，使MEMS电容器更加灵敏，测量结果更加准确。In one embodiment, by doping boron in the middle region to make the first conductive region a P-type conductivity type region or doping phosphorus in the middle region to make the first conductive region a N-type conductivity region, the MEMS capacitor only The first conductivity type area with the middle area conducts electricity and forms a capacitance structure with the second electrode structure opposite to it. When measuring, only the deformation generated by the first conductive area is converted into capacitance, making the MEMS capacitor more sensitive and measuring results accurate.

在另一实施例中，第一电极结构还包括第二导电区域，绝缘区域位于第一导电区域和第二导电区域之间，第一电极结构整体包含第一导电类型掺杂元素使其为P型导电类型或N型导电类型，通过掺杂与第一导电类型掺杂元素电极性相反且浓度相同的第二导电类型掺杂元素形成具有第一预设宽度的绝缘区域以对第一导电区域和第二导电区域进行电隔离，可选地，支撑结构形成的背洞至少将绝缘区域部分裸露，即绝缘区域设置在第一电极结构形变较小的区域，即绝缘区域的设置即降低了第一电极结构与基板相对部分产生的寄生电容，又降低了第一电极结构形变较小区域产生的电容，仅保留了第一电极结构形变较大区域产生的电容，增强了该MEMS电容传感器的灵敏度。并且还可以在第一电极结构与基板之间的牺牲层上开设通孔，使它们在通孔内直接接触，并在接触面设置第三绝缘区域以对基板和第一电极结构之间进行电隔离，进一步降低该MEMS电容传感器的寄生电容。In another embodiment, the first electrode structure further includes a second conductive region, the insulating region is located between the first conductive region and the second conductive region, and the entire first electrode structure contains the first conductive type doping element to make it P Type conductivity type or N-type conductivity type, by doping with a second conductivity type doping element with the opposite polarity and the same concentration as the first conductivity type doping element to form an insulating region with a first preset width for the first conductive region It is electrically isolated from the second conductive area. Optionally, the back hole formed by the support structure exposes at least part of the insulating area, that is, the insulating area is arranged in an area where the deformation of the first electrode structure is smaller, that is, the arrangement of the insulating area reduces the first electrode structure. The parasitic capacitance generated by the opposite part of the electrode structure and the substrate reduces the capacitance generated in the area where the deformation of the first electrode structure is small, and only retains the capacitance generated in the area where the deformation of the first electrode structure is large, which enhances the sensitivity of the MEMS capacitive sensor . And it is also possible to open a through hole on the sacrificial layer between the first electrode structure and the substrate, so that they directly contact in the through hole, and provide a third insulating region on the contact surface to conduct electricity between the substrate and the first electrode structure. Isolation further reduces the parasitic capacitance of the MEMS capacitive sensor.

上述MEMS电容传感器的制备方法，相对于传统的MEMS电容式传感器制备方法，无需设置多层绝缘薄膜，不会造成残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题。而且相对于传统的在第一电极结构中设置间隙并在间隙中填充绝缘材料来进行电隔离的制备方法，不会出现间隙处接合不良和中心轴偏离的问题。Compared with the traditional MEMS capacitive sensor preparation method, the above-mentioned preparation method of the MEMS capacitive sensor does not need to provide a multilayer insulating film, and does not cause problems of complicated residual stress control, multilayer film peeling and film bending. Moreover, compared with the traditional preparation method of providing a gap in the first electrode structure and filling the gap with an insulating material for electrical isolation, the problems of poor bonding at the gap and deviation of the central axis will not occur.

在其中一个实施例中，提供绝缘层作为第一电极结构，并在其中间区域通过掺杂方式使中间区域导电形成第一导电区域，该MEMS电容传感器的制备方法制作流程简单，仅需要通过离子注入等掺杂方式在绝缘层的中间区域掺 杂元素使中间区域的第一导电区域导电即可。In one of the embodiments, an insulating layer is provided as the first electrode structure, and the middle area is doped in the middle area to make the middle area conductive to form the first conductive area. The manufacturing method of the MEMS capacitive sensor is simple and only requires ionization. Doping methods such as implantation can dope elements in the middle region of the insulating layer to make the first conductive region of the middle region conductive.

在另一实施例中，提供第一导电类型导电层作为第一电极结构，第一导电类型导电层中掺杂有第一导电类型掺杂元素，通过掺杂与第一导电类型掺杂元素电极性相反且浓度相同的第二导电类型掺杂元素以中和绝缘区域的电子或空穴使具有第一预设宽度的绝缘区域绝缘，以对第一导电区域和第二导电区域进行电隔离，可选地，采用离子注入的方式进行掺杂，可以严格控制绝缘区域的位置以及宽度，以更好地对第一导电区域和第二导电区域进行电隔离。In another embodiment, a conductive layer of the first conductivity type is provided as the first electrode structure, and the conductive layer of the first conductivity type is doped with the first conductivity type doping element, and the electrode is combined with the first conductivity type doping element through doping. The doping element of the second conductivity type with the opposite sex and the same concentration neutralizes the electrons or holes in the insulating region and insulates the insulating region with the first preset width, so as to electrically isolate the first conductive region from the second conductive region, Optionally, ion implantation is used for doping, and the position and width of the insulating region can be strictly controlled to better electrically isolate the first conductive region and the second conductive region.

本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其他特征、目的和优点将从说明书、附图以及权利要求书变得明显。The details of one or more embodiments of the application are set forth in the following drawings and description. Other features, purposes and advantages of this application will become apparent from the description, drawings and claims.

附图说明Description of the drawings

为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。In order to more clearly describe the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are some embodiments of the present application. For those of ordinary skill in the art, the drawings of other embodiments can be obtained based on these drawings without creative work.

图1为没有降低寄生电容之前的MEMS电容传感器的剖视图。Fig. 1 is a cross-sectional view of the MEMS capacitive sensor without reducing the parasitic capacitance.

图2为传统的降低寄生电容的MEMS电容传感器的剖视图。Figure 2 is a cross-sectional view of a conventional MEMS capacitive sensor with reduced parasitic capacitance.

图3为第一实施例中的MEMS电容传感器的剖视图。Fig. 3 is a cross-sectional view of the MEMS capacitive sensor in the first embodiment.

图4为第二实施例中的MEMS电容传感器的剖视图。Fig. 4 is a cross-sectional view of the MEMS capacitive sensor in the second embodiment.

图5为一实施例中的第一电极结构的俯视图。FIG. 5 is a top view of the first electrode structure in an embodiment.

图6为一实施例中的TFT的结构示意图。FIG. 6 is a schematic diagram of the structure of a TFT in an embodiment.

图7为第三实施例中的MEMS电容传感器的剖视图。Fig. 7 is a cross-sectional view of the MEMS capacitive sensor in the third embodiment.

图8为第四实施例中的MEMS电容传感器的剖视图。Fig. 8 is a cross-sectional view of the MEMS capacitive sensor in the fourth embodiment.

图9为第五实施例中的MEMS电容传感器的剖视图。Fig. 9 is a cross-sectional view of the MEMS capacitive sensor in the fifth embodiment.

图10为一实施例中的制备MEMS电容传感器的方法的流程图。Fig. 10 is a flow chart of a method for preparing a MEMS capacitive sensor in an embodiment.

图11为一实施例中的步骤S200的具体步骤的流程图。FIG. 11 is a flowchart of specific steps of step S200 in an embodiment.

图12为图11实施例中的步骤S230a形成的绝缘层的剖视图。FIG. 12 is a cross-sectional view of the insulating layer formed in step S230a in the embodiment of FIG. 11.

图13为图11实施例中的步骤S232a形成的第一电极结构的剖视图。FIG. 13 is a cross-sectional view of the first electrode structure formed in step S232a in the embodiment of FIG. 11.

图14为另一实施例中的步骤S200的具体步骤的流程图。FIG. 14 is a flowchart of specific steps of step S200 in another embodiment.

图15为图14实施例中的步骤S230b形成的第一导电类型导电层的剖视图。15 is a cross-sectional view of the first conductive type conductive layer formed in step S230b in the embodiment of FIG. 14.

图16为图14实施例中的步骤S232b形成的第一电极结构的剖视图。16 is a cross-sectional view of the first electrode structure formed in step S232b in the embodiment of FIG. 14.

图17为一实施例中的步骤S100的具体步骤的流程图。Fig. 17 is a flowchart of specific steps of step S100 in an embodiment.

图18为图17实施例中的步骤S110提供的基板的剖视图。18 is a cross-sectional view of the substrate provided in step S110 in the embodiment of FIG. 17.

图19为图17实施例中的步骤S120形成的支撑结构的剖视图。19 is a cross-sectional view of the supporting structure formed in step S120 in the embodiment of FIG. 17.

图20为图10实施例中还包括的具体步骤的流程图。Fig. 20 is a flowchart of specific steps further included in the embodiment of Fig. 10.

图21为图20实施例中的步骤S130形成的基板的剖视图。FIG. 21 is a cross-sectional view of the substrate formed in step S130 in the embodiment of FIG. 20.

图22为图20实施例中的步骤S140形成的支撑结构的剖视图。22 is a cross-sectional view of the supporting structure formed in step S140 in the embodiment of FIG. 20.

具体实施方式Detailed ways

为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。In order to make the purpose, technical solutions, and advantages of this application clearer, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the application, and are not used to limit the application.

在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”以及“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，需要说明的是，当元件被称为“形成在另一元件上”时，它可以直接连接到另一元件上或者可能同时存在居中元件。当一个元件被认为是“连接”另一个元件，它可以直接连接到另一元件或者同时存在居中元件。相反，当元件被称作“直接在”另一元件“上”时，不存在中间元件。In the description of this application, it should be understood that the terms "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", " The orientation or positional relationship indicated by “bottom”, “inner”, and “outer” are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the application and simplifying the description, rather than indicating or implying the device or The element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present application. In addition, it should be noted that when an element is referred to as being "formed on another element", it may be directly connected to another element or a centering element may exist at the same time. When an element is considered to be "connected" to another element, it can be directly connected to the other element or an intermediate element can exist at the same time. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

电容传感器是指将被测量(如尺寸、压力等)的变化转换成电容量变化 的一种仪器。图1为传统的MEMS电容传感器的剖视图。该MEMS电容传感器包括第一电极结构200和第二电极结构300。其中，第一电极结构200可以形成薄膜或隔膜元件，第二电极结构300可以形成对电极或背板元件，从而与第一电极结构200形成电容结构。第一电极结构200下层的支撑结构100对第一电极结构200起到支撑的作用，在支撑结构100中开设有用于裸露第一电极结构200的背洞400。第一电极结构200产生形变的区域AA区和背洞400是相对的。在压力的作用下，比如在空气声压变化或机械振动的变化产生的压力下，第一电极结构200在AA区产生形变，上下两个电极结构之间距离发生变化，从而产生变化的电容。机械振动可以是由于声音或者机械外力所引起的骨头比如耳骨或者其他固体的振动。比如，当该电容传感器用于检测声音时，声音会引起空气声压的变化，第一电极结构200下方气压变化直接推动其发生振动以产生形变。此时，由于第一电极结构200和第二电极结构300之间的间距发生变化，从而产生变化的电容，实现对声波或振动等能让第一电极结构200产生形变的物理量的探测。Capacitive sensor refers to an instrument that converts changes in the measured (such as size, pressure, etc.) into changes in capacitance. Figure 1 is a cross-sectional view of a conventional MEMS capacitive sensor. The MEMS capacitive sensor includes a first electrode structure 200 and a second electrode structure 300. Among them, the first electrode structure 200 may form a thin film or a diaphragm element, and the second electrode structure 300 may form a counter electrode or a back plate element, thereby forming a capacitor structure with the first electrode structure 200. The supporting structure 100 under the first electrode structure 200 supports the first electrode structure 200, and a back hole 400 for exposing the first electrode structure 200 is opened in the supporting structure 100. The region AA where the deformation of the first electrode structure 200 occurs is opposite to the back hole 400. Under the action of pressure, such as pressure caused by changes in air sound pressure or mechanical vibration, the first electrode structure 200 deforms in the AA area, and the distance between the upper and lower electrode structures changes, thereby generating a changed capacitance. Mechanical vibration can be the vibration of bones such as ear bones or other solids caused by sound or mechanical external forces. For example, when the capacitive sensor is used to detect sound, the sound will cause a change in air sound pressure, and the change in air pressure under the first electrode structure 200 directly drives it to vibrate to produce deformation. At this time, as the distance between the first electrode structure 200 and the second electrode structure 300 changes, a changed capacitance is generated, and the detection of physical quantities such as sound waves or vibrations that can cause the first electrode structure 200 to deform.

图1中的虚线为第一电极结构200产生形变的程度，可以看到，第一电极结构200在与支撑结构100相对的BB区不会产生形变，只会在与背洞400相对的AA区产生形变，而且形变程度由边缘向中心越来越大。其中，与背洞400相对的中间区域AC区为第一电极结构200形变较大的区域，边缘的AB区为第一电极结构200形变较小的区域。本案中的寄生电容指的是第一电极结构200和第二电极结构300之间不想要的电容以及第一电极结构200和支撑结构100之间的电容，即BB区的固有电容。当电容传感器在测量变化的物理量时，寄生电容常会影响检测结果的准确性。在AB区之间的第一电极结构200的形变程度较小，形变时产生的变化电容也很小，故称为非灵敏区。传统的MEMS电容传感器测得的电容为BB区的固有电容、AC区的电容以及AB区产生的电容之和。The dotted line in FIG. 1 is the degree of deformation of the first electrode structure 200. It can be seen that the first electrode structure 200 will not deform in the BB area opposite to the support structure 100, but only in the AA area opposite to the back hole 400. Deformation occurs, and the degree of deformation increases from the edge to the center. Wherein, the AC area in the middle area opposite to the back hole 400 is the area where the deformation of the first electrode structure 200 is relatively large, and the area AB at the edge is the area where the deformation of the first electrode structure 200 is relatively small. The parasitic capacitance in this case refers to the unwanted capacitance between the first electrode structure 200 and the second electrode structure 300 and the capacitance between the first electrode structure 200 and the support structure 100, that is, the inherent capacitance of the BB area. When the capacitance sensor is measuring a changing physical quantity, the parasitic capacitance often affects the accuracy of the detection result. The deformation degree of the first electrode structure 200 between the AB regions is relatively small, and the change capacitance generated during the deformation is also small, so it is called the insensitive region. The capacitance measured by the traditional MEMS capacitance sensor is the sum of the inherent capacitance in the BB zone, the capacitance in the AC zone and the capacitance in the AB zone.

如图2中所示为传统的为降低第一电极结构200和第二电极结构300之间的寄生电容设计的MEMS电容传感器的剖面图。该MEMS电容传感器包括第 一电极结构200和第二电极结构300。第一电极结构200包括第一导电层210和第一绝缘层220，且第一导电层210被包覆于第一绝缘层220内，即，在第一电极结构200的中间区域形成有绝缘层-导电层-绝缘层的三明治结构，来达到绝缘的目的以降低寄生电容。这种实现方式需要通过多层膜层堆栈来将第一导电层210包覆于第一绝缘层220内，容易出现残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题。As shown in FIG. 2, a cross-sectional view of a conventional MEMS capacitive sensor designed to reduce the parasitic capacitance between the first electrode structure 200 and the second electrode structure 300. The MEMS capacitive sensor includes a first electrode structure 200 and a second electrode structure 300. The first electrode structure 200 includes a first conductive layer 210 and a first insulating layer 220, and the first conductive layer 210 is covered in the first insulating layer 220, that is, an insulating layer is formed in the middle area of the first electrode structure 200 -Conductive layer-insulation layer sandwich structure to achieve the purpose of insulation and reduce parasitic capacitance. This implementation requires a multilayer film layer stack to cover the first conductive layer 210 in the first insulating layer 220, which is prone to problems such as complex residual stress control, multilayer film peeling and film bending.

为了解决传统的MEMS电容传感器中用于降低寄生电容的多层堆栈容易造成残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题，本案提出了一种新的MEMS电容传感器。In order to solve the problems of complicated residual stress control, multilayer film peeling and film bending caused by the multi-layer stack used to reduce the parasitic capacitance in the traditional MEMS capacitive sensor, a new MEMS capacitive sensor is proposed in this case.

在一实施例中，如图3所示，该MEMS电容传感器包括第一电极结构200。In an embodiment, as shown in FIG. 3, the MEMS capacitive sensor includes a first electrode structure 200.

第一电极结构200包括位于中间区域的第一导电区域230a以及第一导电区域230a周围的绝缘区域240,第一导电区域230a和绝缘区域240为一整体结构，其与传统的MEMS电容传感器中的绝缘区域是通过在第一电极结构中设置间隙并在间隙中填充绝缘物质的形成方式有本质上的区别，并且第一导电区域230a和绝缘区域240中至少一个是通过掺杂方式形成。在本实施例中，由于第一导电区域230a位于第一电极结构200的中间区域，故第一导电区域230a至少部分位于AC区；由于绝缘区域240位于第一导电区域230a的周围，而绝缘区域240不会影响第一导电区域230a测得的电容，从而降低了寄生电容。并且相对于传统的MEMS电容式传感器，上述MEMS电容传感器无需设置多层绝缘薄膜，不会造成残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题。The first electrode structure 200 includes a first conductive area 230a located in the middle area and an insulating area 240 around the first conductive area 230a. The first conductive area 230a and the insulating area 240 are an integral structure, which is similar to the conventional MEMS capacitive sensor. The insulating region is formed by providing a gap in the first electrode structure and filling the gap with an insulating material in a manner that is essentially different, and at least one of the first conductive region 230a and the insulating region 240 is formed by doping. In this embodiment, since the first conductive area 230a is located in the middle area of the first electrode structure 200, the first conductive area 230a is at least partially located in the AC area; since the insulating area 240 is located around the first conductive area 230a, the insulating area 240 will not affect the capacitance measured in the first conductive region 230a, thereby reducing parasitic capacitance. And compared with the traditional MEMS capacitive sensor, the above-mentioned MEMS capacitive sensor does not need to be provided with a multilayer insulating film, and will not cause problems of complicated residual stress control, multilayer film peeling and film bending.

在第一实施例中，参见图3，第一导电区域230a通过掺杂方式形成。半导体的导电过程存在电子和空穴两种载流子，导电类型是由半导体材料中多数载流子的类别确定的。多数载流子是带正电的空穴的称为P型导电类型，多数载流子是带负电的电子的称为N型导电类型。由于电子和空穴的运动方向不一样，P型导电类型区和N型导电类型区的电极性不一样。在一实施例中，第一导电区域230a为P型导电类型区。在另一实施例中，第一导电区域 230a为N型导电类型区。In the first embodiment, referring to FIG. 3, the first conductive region 230a is formed by doping. There are two types of carriers, electrons and holes, in the conduction process of semiconductors. The type of conduction is determined by the category of majority carriers in the semiconductor material. The majority carriers are positively charged holes called P-type conductivity type, and the majority carriers are negatively charged electrons called N-type conductivity type. Since the moving directions of electrons and holes are different, the electrical conductivity of the P-type conductivity type region and the N-type conductivity type region are different. In an embodiment, the first conductive region 230a is a P-type conductivity type region. In another embodiment, the first conductive region 230a is an N-type conductivity type region.

硅晶体等半导体材料本身并不导电，通过在硅晶体等半导体材料中进行元素掺杂能改变该材料的导电性能。比如，通过在硅晶体中掺杂杂质磷元素或锑元素等能使其成为N型导电类型，在硅晶体中掺杂杂质硼元素或铟元素等能使其成为P型导电类型。本实施例中，通过在第一电极结构200的第一导电区域230a掺杂杂质元素使第一导电区域230a导电并为P型导电类型或N型导电类型，其周围的绝缘区域240由于未掺杂故仍然不导电，第一导电区域230a测得的电容不受绝缘区域240的影响，从而降低了寄生电容。Semiconductor materials such as silicon crystals are not inherently conductive. Doping elements in semiconductor materials such as silicon crystals can change the conductivity of the materials. For example, the silicon crystal can be made into an N-type conductivity type by doping an impurity phosphorus element or an antimony element, and the silicon crystal can be made a P-type conductivity type by doping an impurity element such as boron or indium. In the present embodiment, the first conductive region 230a of the first electrode structure 200 is doped with impurity elements to make the first conductive region 230a conductive and of the P-type conductivity type or the N-type conductivity type. The surrounding insulating region 240 is not doped Miscellaneous faults are still non-conductive, and the capacitance measured in the first conductive region 230a is not affected by the insulating region 240, thereby reducing the parasitic capacitance.

例如，可以采用离子注入的方式在第一电极结构200的中间区域掺杂杂质元素以使原本绝缘的第一导电区域230a导电。离子注入掺杂工艺是将加速到一定高能量的离子束注入固体材料表面层内，以改变表面层物理和化学性质的工艺，离子注入掺杂工艺易于控制掺杂元素在指定区域，从而得到更像理想的MEMS电容传感器，在本实施例中，指定区域为第一导电区域230a。For example, an impurity element may be doped in the middle region of the first electrode structure 200 by ion implantation to make the originally insulated first conductive region 230a conductive. The ion implantation doping process is a process of injecting an ion beam accelerated to a certain high energy into the surface layer of a solid material to change the physical and chemical properties of the surface layer. The ion implantation doping process is easy to control the doping elements in the specified area, so as to obtain more Like an ideal MEMS capacitive sensor, in this embodiment, the designated area is the first conductive area 230a.

在第二实施例中，如图4所示，第一电极结构200还包括第二导电区域230b。绝缘区域240位于第一导电区域230a和第二导电区域230b之间，绝缘区域240具有第一预设宽度。在本实施例中，第一导电区域230a、第二导电区域230b以及绝缘区域240均包括第一导电类型掺杂元素，使第一电极结构200整体呈现第一导电类型，再通过离子注入等掺杂方式在绝缘区域240掺杂与第一导电类型掺杂元素的电极性相反的第二导电类型掺杂元素使绝缘区域240中的电子和空穴发生中和，从而绝缘以对第一导电区域230a和第二导电区域230b进行电隔离。In the second embodiment, as shown in FIG. 4, the first electrode structure 200 further includes a second conductive region 230b. The insulating region 240 is located between the first conductive region 230a and the second conductive region 230b, and the insulating region 240 has a first predetermined width. In this embodiment, the first conductive region 230a, the second conductive region 230b, and the insulating region 240 all include doping elements of the first conductivity type, so that the first electrode structure 200 as a whole exhibits the first conductivity type, and then doped by ion implantation or the like. Doping the insulating region 240 with a second conductivity type doping element having the opposite polarity to the first conductivity type doping element neutralizes the electrons and holes in the insulating region 240, thereby insulating the first conductive region. 230a and the second conductive region 230b are electrically isolated.

在一实施例中，第一导电类型为P型导电类型，通过在第一导电区域230a和第二导电区域230b之间的第一预设宽度内注入硼，从而使该第一预设宽度内的电子和空穴发生中和，以形成绝缘区域240。第一导电区域230a和第二导电区域230b的导电性能不变，仍然为P型导电类型区。In one embodiment, the first conductivity type is P-type conductivity, and boron is injected into the first predetermined width between the first conductive region 230a and the second conductive region 230b, so that the first predetermined width The electrons and holes are neutralized to form an insulating region 240. The conductivity of the first conductive region 230a and the second conductive region 230b remains unchanged, and remains a P-type conductivity type region.

在另一实施例中，在第一导电类型为N型导电类型时，通过在第一导电区域230a和第二导电区域230b之间的第一预设宽度内注入磷，从而使该第 一预设宽度内的电子和空穴发生中和，以形成绝缘区域240。第一导电区域230a和第二导电区域230b的导电性能不变，仍为N型导电类型区。In another embodiment, when the first conductivity type is the N-type conductivity type, phosphorus is injected into the first predetermined width between the first conductive region 230a and the second conductive region 230b, so that the first pre It is assumed that the electrons and holes within the width are neutralized to form an insulating region 240. The conductivity of the first conductive region 230a and the second conductive region 230b remains unchanged, and remains an N-type conductivity type region.

绝缘区域240的电隔离性能与第一预设宽度、第一导电类型掺杂元素浓度以及掺杂的第二导电类型掺杂元素的浓度均有关系。在本实施例中，第一导电类型掺杂元素和第二导电类型掺杂元素的浓度相同，电隔离效果更好。在本实施例中，绝缘区域240的第一预设宽度为2微米～20微米。可以根据需要对绝缘区域240的杂质掺杂浓度进行设置，本案并不作具体的限定。由于MEMS电容传感器本身的体积就较小，而绝缘区域240的宽度较小使其并不会占据很大的空间，有利于MEMS电容传感器的小型化，且MEMS电容传感器中的有效利用空间较大。而若是第一预设宽度过小，则形成的绝缘区域240不能很好地对位于中间区域的第一导电区域230a与位于边缘区域的第二导电区域230b起到电隔离的作用。因此，2微米～20微米是较为理想的绝缘区域240的宽度。在其中一个实施例中，绝缘区域240的第一预设宽度为10微米。The electrical isolation performance of the insulating region 240 is related to the first predetermined width, the concentration of the first conductivity type doping element, and the doped concentration of the second conductivity type doping element. In this embodiment, the concentration of the first conductivity type doping element and the second conductivity type doping element are the same, and the electrical isolation effect is better. In this embodiment, the first predetermined width of the insulating region 240 is 2 μm to 20 μm. The impurity doping concentration of the insulating region 240 can be set as required, and this case is not specifically limited. Since the volume of the MEMS capacitive sensor itself is small, and the width of the insulating region 240 is small, it does not occupy a large space, which is conducive to the miniaturization of the MEMS capacitive sensor, and the effective use of the MEMS capacitive sensor is larger. . If the first predetermined width is too small, the formed insulating region 240 cannot effectively isolate the first conductive region 230a located in the middle region and the second conductive region 230b located in the edge region. Therefore, 2 μm to 20 μm is the ideal width of the insulating region 240. In one of the embodiments, the first predetermined width of the insulating region 240 is 10 microns.

在本实施例中，从图4的剖视图来看，第一电极结构200中至少包括两个绝缘区域240，将第一电极结构200至少分成三个部分，即分成位于中间区域的第一导电区域230a和分别位于边缘区域的两个第二导电区域230b。从俯视图图5来看，剖视图图4中的两个绝缘区域240也可以是一个整体的结构，比如圆环状、多边形的环状等结构。位于第一电极结构200边缘区域的第二导电区域230b也可以是一个整体的结构。第一电极结构200中的绝缘区域240将位于中间区域的第一导电区域230a和位于边缘区域的第二导电区域230b进行了电隔离，使第一导电区域230a测得的电容不受第二导电区域230b和绝缘区域240的影响。In this embodiment, from the cross-sectional view of FIG. 4, the first electrode structure 200 includes at least two insulating regions 240, and the first electrode structure 200 is divided into at least three parts, that is, into the first conductive region located in the middle region. 230a and two second conductive regions 230b respectively located in the edge region. From the top view of FIG. 5, the two insulating regions 240 in the cross-sectional view of FIG. 4 may also be an integral structure, such as a circular ring shape, a polygonal ring shape, and the like. The second conductive area 230b located at the edge area of the first electrode structure 200 may also be an integral structure. The insulating region 240 in the first electrode structure 200 electrically isolates the first conductive region 230a located in the middle region and the second conductive region 230b located in the edge region, so that the capacitance measured by the first conductive region 230a is not subject to the second conductivity. The influence of the area 230b and the insulating area 240.

下面以如图6中所示的应用到场效应管(FET，Field Effect Transistor)中进行举例说明绝缘区域240的电隔离作用。半导体的电流可以是电子流或电洞流，即上述所说的电子和空穴的移动所形成的电流。利用电子流来工作的称为N通道场效应管(n-channel FET)，利用电洞流来工作的 称为P通道场效应管(p-channel FET)。N通道FET的源极(Source)提供电子，经过N型通道，到达漏极(Drain)，电流方向是由漏极(Drain)流向源极(Source)。对于P通道FET的源极(Source)则提供电洞，经过P型通道，到达漏极(Drain)。上述MEMS电容传感器第一导电区域230a和第二导电区域230b的电极性相同，均为P型导电类型区或N型导电类型区，但绝缘区域240的设置对它们进行了电隔离。The electrical isolation effect of the insulating region 240 is illustrated below by applying an example in a field effect transistor (FET, Field Effect Transistor) as shown in FIG. 6. The current in a semiconductor can be electron flow or hole flow, that is, the current formed by the movement of electrons and holes mentioned above. Those that use electron flow to work are called n-channel FETs, and those that use hole flow to work are called p-channel FETs. The source (Source) of the N-channel FET provides electrons through the N-type channel to the drain (Drain), and the direction of current flows from the drain (Drain) to the source (Source). For the P-channel FET's source (Source), a hole is provided, which passes through the P-channel to the drain (Drain). The electrical conductivity of the first conductive region 230a and the second conductive region 230b of the MEMS capacitive sensor are the same, and they are both P-type conductivity type regions or N-type conductivity type regions, but the insulation region 240 electrically isolates them.

在其他实施例中，图4中的第二导电区域230b中还包括第二绝缘区域(图中未示)，以将第二导电区域230b划分为多个被第二绝缘区域所间隔的第二导电子区域。通过在第二导电区域230b中设置第二绝缘区域，能保证对第二导电区域230b与第一导电区域230a进行更好的电隔离。In other embodiments, the second conductive region 230b in FIG. 4 further includes a second insulating region (not shown) to divide the second conductive region 230b into a plurality of second insulating regions separated by the second insulating region. Conductive sub-area. By providing the second insulating region in the second conductive region 230b, it can ensure that the second conductive region 230b is better electrically isolated from the first conductive region 230a.

在本实施例中，参见图4，上述MEMS电容传感器还包括第二电极结构300。第二电极结构300至少部分与第一导电区域230a相对设置以形成电容结构。由于绝缘区域240将第一电极结构200上的第一导电区域230a和第二导电区域230b进行了电隔离，而绝缘区域230a本身并不导电，故该MEMS电容传感器测量的电容为第一导电区域230a与第二电极结构300之间的电容。其中，第一导电区域230a和第二电极结构300之间可以设置连接柱等固定结构进行连接，或者在第一电极结构200和第二电极结构300的边缘区域设置固定结构进行支撑。第一导电区域230a和第二电极结构300之间存在间隙，比如空气间隙。在其他实施例中，也可以在第一导电区域230a和第二电极结构300之间***云母片，云母片的击穿电压较大，***云母片后能减小第一导电区域230a和第二电极结构300之间的起始间距，并且能降低该MEMS电容传感器被击穿的概率。In this embodiment, referring to FIG. 4, the aforementioned MEMS capacitive sensor further includes a second electrode structure 300. The second electrode structure 300 is at least partially disposed opposite to the first conductive region 230a to form a capacitor structure. Since the insulating area 240 electrically isolates the first conductive area 230a and the second conductive area 230b on the first electrode structure 200, and the insulating area 230a itself is not conductive, the capacitance measured by the MEMS capacitive sensor is the first conductive area The capacitance between 230a and the second electrode structure 300. Wherein, a fixed structure such as a connecting pillar may be provided between the first conductive area 230a and the second electrode structure 300 for connection, or a fixed structure may be provided at the edge area of the first electrode structure 200 and the second electrode structure 300 for support. There is a gap, such as an air gap, between the first conductive region 230a and the second electrode structure 300. In other embodiments, a mica sheet may also be inserted between the first conductive area 230a and the second electrode structure 300. The breakdown voltage of the mica sheet is relatively large. After the mica sheet is inserted, the first conductive area 230a and the second conductive area 230a can be reduced. The initial spacing between the electrode structures 300 can reduce the probability of breakdown of the MEMS capacitive sensor.

在本实施例中，参见图4，上述MEMS电容传感器还包括支撑结构100。支撑结构100包括基板110以及形成于基板110上的牺牲层120。基板110和牺牲层120上开设有用于裸露第一导电区域230a的背洞400。由于第一导电区域230a裸露在背洞400中，因此当第一电极结构200受到力的作用时，第一导电区域230a能发生变形，即第一导电区域230a和第二电极结构300 之间的间距能发生改变，从而检测到变化的电容。第一电极结构200部分位于牺牲层120上，即牺牲层120位于第一电极结构200和基板110之间，能避免在对基板110进行刻蚀工艺形成背洞400时对第一电极结构200造成损坏而造成该MEMS电容传感器的测量精度降低。In this embodiment, referring to FIG. 4, the above-mentioned MEMS capacitive sensor further includes a supporting structure 100. The support structure 100 includes a substrate 110 and a sacrificial layer 120 formed on the substrate 110. The substrate 110 and the sacrificial layer 120 are provided with a back hole 400 for exposing the first conductive region 230a. Since the first conductive area 230a is exposed in the back hole 400, when the first electrode structure 200 receives a force, the first conductive area 230a can deform, that is, the gap between the first conductive area 230a and the second electrode structure 300 The pitch can be changed to detect the changed capacitance. The first electrode structure 200 is partially located on the sacrificial layer 120, that is, the sacrificial layer 120 is located between the first electrode structure 200 and the substrate 110, which can prevent the first electrode structure 200 from being caused by the etching process on the substrate 110 to form the back hole 400. The damage causes the measurement accuracy of the MEMS capacitive sensor to decrease.

绝缘区域240可以完全位于BB区即不被背洞400所裸露,也可以完全位于AB区即完全被背洞400所裸露，还可以位于AB区和BB区交界处即部分被背洞400所裸露。The insulating area 240 can be completely located in the BB area that is not exposed by the back hole 400, or completely located in the AB area that is completely exposed by the back hole 400, or located at the junction of the AB area and the BB area, that is, partially exposed by the back hole 400 .

在一实施例中，绝缘区域240至少部分被背洞400所裸露，以保证产生寄生电容的BB区与第一导电区域230a完全被电隔离，能最大程度地降低BB区产生的寄生电容。In one embodiment, the insulating region 240 is at least partially exposed by the back hole 400 to ensure that the BB region that generates parasitic capacitance is completely electrically isolated from the first conductive region 230a, which can minimize the parasitic capacitance generated in the BB region.

当第二导电区域230b完全位于支撑结构100上且其宽度小于或等于支撑结构100时，其与AA区没有重合，不会产生形变；当第二导电区域230b仅有部分位于支撑结构100即其宽度大于支撑结构100时，其与AA区有重合，会产生形变。可选地，将第二导电区域230b设置在寄生电容产生的区域BB区，绝缘区域240设置于第一电极结构200的非灵敏区即AB区。由于在AB区之间的第一电极结构200的形变程度较小，形变时产生的变化电容也很小。将绝缘区域240设置在非灵敏区AB区，不仅能对第一导电区域230a和第二导电区域230b起到电隔离的作用以降低BB区产生的寄生电容，仅有如图5中所示从第一导电区域230引出电极结构的时候才会产生寄生电容。而且对于电容结构而言，第一电极结构200的面积越大越容易产生形变，但随着产品小型化的发展，所以需要用较小的面积同样能够达到灵敏度高的要求，本实施例中将第二导电区域230b设置在寄生电容产生的区域BB区，绝缘区域240设置于第一电极结构200的非灵敏区即AB区，也即第一导电区域230a形成于形变最大的区域AC区，且仅有第一导电区域230a测得的电容为最终MEMS传感器测得的电容，灵敏度较高，并且即便绝缘区域240牺牲了第一电极结构200的部分面积，也因为绝缘区域240设置在非灵敏区AB区，从而不会降低整个MEMS电容传感器的灵敏度。在第三实施例中，如图7中所示，绝 缘区域240的宽度也可以小于AB区的宽度，第二导电区域230b的宽度大于支撑结构100的宽度。When the second conductive area 230b is completely located on the support structure 100 and its width is less than or equal to the support structure 100, it does not overlap with the AA area and will not deform; when the second conductive area 230b is only partially located on the support structure 100, it is When the width is larger than the support structure 100, it overlaps with the AA zone, which will cause deformation. Optionally, the second conductive area 230b is disposed in the BB area where the parasitic capacitance is generated, and the insulating area 240 is disposed in the non-sensitive area of the first electrode structure 200, that is, the AB area. Since the deformation degree of the first electrode structure 200 between the AB regions is small, the change capacitance generated during the deformation is also small. Arranging the insulating area 240 in the non-sensitive area AB area not only can electrically isolate the first conductive area 230a and the second conductive area 230b to reduce the parasitic capacitance generated in the BB area, but only from the first conductive area as shown in FIG. 5 Parasitic capacitance is generated when a conductive region 230 leads to the electrode structure. Moreover, for the capacitor structure, the larger the area of the first electrode structure 200, the easier it is to deform. However, with the development of product miniaturization, it is necessary to use a smaller area to achieve high sensitivity. In this embodiment, the first electrode structure 200 The two conductive regions 230b are arranged in the region BB where the parasitic capacitance is generated, and the insulating region 240 is arranged in the non-sensitive region of the first electrode structure 200, namely the AB region, that is, the first conductive region 230a is formed in the AC region where the deformation is greatest, and only The capacitance measured by the first conductive area 230a is the final capacitance measured by the MEMS sensor, and the sensitivity is high. Even if the insulating area 240 sacrifices part of the area of the first electrode structure 200, it is because the insulating area 240 is set in the non-sensitive area AB This will not reduce the sensitivity of the entire MEMS capacitive sensor. In the third embodiment, as shown in FIG. 7, the width of the insulating region 240 may also be smaller than the width of the AB region, and the width of the second conductive region 230b is larger than the width of the support structure 100.

在第四实施例中，如图8所示，牺牲层120上开设有通孔122，使第一电极结构200和基板110在通孔122内直接接触。通孔122的形状可以是方孔、圆孔、多边形孔等，本案并不对通孔122的形状做具体的限制。在本实施例中，基板110的电极性和第一导电类型掺杂元素的电极性可以相同，也可以相反。在第一电极结构200和基板110的接触面设有具有第二预设宽度的第三绝缘区域124，例如，通过在第一电极结构200和基板110的接触面掺杂与第一导电掺杂元素电极性相反的元素以形成第三绝缘区域124，又例如，通过在第一电极结构200和基板110的接触面掺杂与基板110的电极性相反的元素以形成第三绝缘区域124，即第三绝缘区域124包括具有相反电性的第一导电类型掺杂元素和第二导电类型掺杂元素。第二预设宽度的大小可以和第一预设宽度的大小相同，也可以不同。第三绝缘区域124的设置对基板110和第一电极结构200之间也进行了电隔离，从而进一步降低了BB区产生的寄生电容及降低牺牲层120的蚀刻时间控制影响并准确定义出第一电极结构200的形变区AA区的边界。In the fourth embodiment, as shown in FIG. 8, the sacrificial layer 120 is provided with a through hole 122, so that the first electrode structure 200 and the substrate 110 directly contact the through hole 122. The shape of the through hole 122 may be a square hole, a round hole, a polygonal hole, etc., and the shape of the through hole 122 is not specifically limited in this case. In this embodiment, the electrical polarity of the substrate 110 and the electrical polarity of the doping element of the first conductivity type may be the same or opposite. A third insulating region 124 with a second preset width is provided on the contact surface of the first electrode structure 200 and the substrate 110, for example, by doping and first conductive doping on the contact surface of the first electrode structure 200 and the substrate 110 The element with the opposite electrical polarity is used to form the third insulating region 124. For example, the contact surface between the first electrode structure 200 and the substrate 110 is doped with an element with the opposite electrical polarity to the substrate 110 to form the third insulating region 124, namely The third insulating region 124 includes a first conductivity type doping element and a second conductivity type doping element having opposite electrical properties. The size of the second preset width may be the same as or different from the size of the first preset width. The arrangement of the third insulating region 124 also electrically isolates the substrate 110 and the first electrode structure 200, thereby further reducing the parasitic capacitance generated in the BB region and reducing the influence of etching time control of the sacrificial layer 120, and accurately defining the first A boundary of the deformation area AA of the electrode structure 200.

本申请一实施例还提供一种电子设备，包括电子设备本体和设置于电子设备本体上的上述MEMS电容传感器。该电子设备可以为手机、数码相机、笔记本电脑、个人数字助理、MP3播放器、助听器、电视、电话、会议***、有线耳机、无线耳机、录音笔、录音设备、线控器等等。An embodiment of the present application also provides an electronic device, including an electronic device body and the above-mentioned MEMS capacitive sensor provided on the electronic device body. The electronic equipment can be mobile phones, digital cameras, notebook computers, personal digital assistants, MP3 players, hearing aids, televisions, telephones, conference systems, wired headsets, wireless headsets, voice recorders, recording equipment, line controllers, and so on.

本申请一实施例还提供一种MEMS电容传感器的制备方法。参见图10，该方法包括以下步骤：An embodiment of the present application also provides a method for manufacturing a MEMS capacitive sensor. Referring to Figure 10, the method includes the following steps:

步骤S200，形成第一电极结构。Step S200, forming a first electrode structure.

如图3所示，第一电极结构200包括位于中间区域的第一导电区域230a以及第一导电区域230a周围的绝缘区域240，第一导电区域230a和绝缘区域240为一整体结构，且其中至少一个通过掺杂方式形成。As shown in FIG. 3, the first electrode structure 200 includes a first conductive region 230a in the middle region and an insulating region 240 around the first conductive region 230a. The first conductive region 230a and the insulating region 240 are an integral structure, and at least One is formed by doping.

在一实施例中，步骤S200的具体流程参见图11，包括以下步骤：In an embodiment, the specific process of step S200 is shown in FIG. 11, and includes the following steps:

步骤S230a，提供绝缘层。Step S230a, providing an insulating layer.

如图12所示，绝缘层整体不导电，如使用半导体材料。其中，锗和硅是最常用的元素半导体，比如单晶硅、多晶硅、氮化硅、富硅氮化硅、硅锗化合物(SiGe)等。As shown in Figure 12, the insulating layer as a whole is not conductive, such as using a semiconductor material. Among them, germanium and silicon are the most commonly used elemental semiconductors, such as monocrystalline silicon, polycrystalline silicon, silicon nitride, silicon-rich silicon nitride, and silicon germanium compounds (SiGe).

步骤S232a，在绝缘层的中间区域进行掺杂以形成第一导电区域。Step S232a, doping is performed in the middle region of the insulating layer to form a first conductive region.

在半导体材料中掺杂杂质元素能改变其导电性能。比如，在硅晶体材料中掺杂硼使其成为P型导电类型或者在硅晶体材料中掺杂磷使其成为N型导电类型。如图13所示，在绝缘层的中间区域进行元素掺杂后，其中间区域导电并形成第一导电区域230a。其中，第一导电区域230a可以为P型导电类型区，也可以为N型导电类型区。第一导电区域230a周围不导电的区域为绝缘区域240。在绝缘层的绝缘区域240进行元素掺杂后，该层即形成上述的第一电极结构200，第一电极结构200包括中间区域的第一导电区域230a和第一导电区域230a周围的绝缘区域240。Doping impurity elements in semiconductor materials can change their conductivity. For example, doping boron into a silicon crystal material to make it a P-type conductivity type or doping a silicon crystal material to make it a N-type conductivity type with phosphorus. As shown in FIG. 13, after elemental doping is performed in the middle region of the insulating layer, the middle region is conductive and forms a first conductive region 230a. Wherein, the first conductive area 230a may be a P-type conductivity type area or an N-type conductivity type area. The non-conductive area around the first conductive area 230 a is the insulating area 240. After elemental doping is performed in the insulating region 240 of the insulating layer, the layer forms the aforementioned first electrode structure 200. The first electrode structure 200 includes a first conductive region 230a in the middle region and an insulating region 240 around the first conductive region 230a. .

在另一实施例中，第一电极结构200还包括第二导电区域230b，绝缘区域240位于第一导电区域230a和第二导电区域230b之间。步骤S200的具体流程参见图14，包括以下步骤：In another embodiment, the first electrode structure 200 further includes a second conductive region 230b, and the insulating region 240 is located between the first conductive region 230a and the second conductive region 230b. Refer to Figure 14 for the specific process of step S200, which includes the following steps:

步骤S230b，提供第一导电类型导电层。Step S230b, providing a conductive layer of the first conductivity type.

如图15所示，提供的第一导电类型导电层整体为第一导电类型。As shown in FIG. 15, the provided first conductivity type conductive layer is of the first conductivity type as a whole.

步骤S232b，在第一导电类型导电层掺杂与其电极性相反的第二导电掺杂类型元素以形成绝缘区域，绝缘区域具有第一预设宽度。In step S232b, the first conductive type conductive layer is doped with a second conductive doping type element opposite to its electrical polarity to form an insulating region, the insulating region having a first predetermined width.

如图16所示，绝缘区域240将第一导电类型导电层划分为位于中间区域的第一导电区域230a和位于边缘区域的第二导电区域230b，第一导电区域230a和第二导电区域230b的导电类型相同，均为第一导电类型。而由于第一导电类型导电层和第二导电类型掺杂元素的电极性相反，故在绝缘区域240掺杂第二导电类型掺杂元素后，绝缘区域240中电子和空穴中和，从而绝缘。在第一导电类型导电层的绝缘区域240进行元素掺杂后，形成上述的第一电极结构200。第一电极结构200包括绝缘区域240和被电隔离的第一导电区 域230a以及第二导电区域230b。As shown in FIG. 16, the insulating area 240 divides the first conductive type conductive layer into a first conductive area 230a located in the middle area and a second conductive area 230b located in the edge area. The first conductive area 230a and the second conductive area 230b are The conductivity types are the same, and they are all of the first conductivity type. Since the electrical conductivity of the first conductivity type conductive layer and the second conductivity type doping element are opposite, after the second conductivity type doping element is doped in the insulating region 240, the electrons and holes in the insulating region 240 are neutralized, thereby insulating . After elemental doping is performed on the insulating region 240 of the first conductive type conductive layer, the above-mentioned first electrode structure 200 is formed. The first electrode structure 200 includes an insulating region 240 and a first conductive region 230a and a second conductive region 230b that are electrically isolated.

在本实施例中，第一导电类型导电层掺杂有第一导电类型掺杂元素，通过在绝缘区域240掺杂与第一导电类型掺杂元素的电极性相反且浓度相同的第二导电类型掺杂元素，使绝缘区域240的电隔离效果更好。In this embodiment, the first conductivity type conductive layer is doped with a first conductivity type doping element, and the insulating region 240 is doped with a second conductivity type that is opposite in polarity to the first conductivity type doping element and has the same concentration. The doping element makes the electrical isolation effect of the insulating region 240 better.

在本实施例中，第一导电类型导电层为P型导电类型层或N型导电类型层。当第一导电类型导电层为P型导电类型层时，第二导电类型掺杂元素为磷，当第一导电类型导电层为N型导电类型层时，第二导电类型掺杂元素为硼，即在第一导电类型导电层的绝缘区域240掺杂了电极性相反的杂质元素，该杂质元素使绝缘区域240中的电子和空穴中和从而绝缘，制作工艺简单。传统的在第一电极结构200中填充绝缘材料来进行电隔离的方式需要在第一电极结构200中先设置间隙，然后再在间隙内填充绝缘材料，因此容易出现绝缘材料和第一电极结构200中原有材料接合不良和中心轴偏离的问题，而本实施例中通过在原有的绝缘区域240中进行元素掺杂的方式来电隔离，并不需要预先在第一电极结构200中设置间隙，因此并不会产生接合不良和中心轴偏离的问题。In this embodiment, the first conductivity type conductive layer is a P type conductivity type layer or an N type conductivity type layer. When the first conductivity type conductive layer is a P type conductivity type layer, the second conductivity type doping element is phosphorus, and when the first conductivity type conductive layer is an N type conductivity type layer, the second conductivity type doping element is boron, That is, the insulating region 240 of the conductive layer of the first conductivity type is doped with impurity elements with opposite electrical polarity. The impurity elements neutralize the electrons and holes in the insulating region 240 to insulate them, and the manufacturing process is simple. The traditional method of filling insulating material in the first electrode structure 200 for electrical isolation requires first providing a gap in the first electrode structure 200, and then filling the gap with insulating material, so the insulating material and the first electrode structure 200 are prone to appear In this embodiment, the original material is poorly joined and the central axis is deviated. However, in this embodiment, the element is doped in the original insulating region 240 for electrical isolation, and there is no need to set a gap in the first electrode structure 200 in advance. There is no problem of poor joints and center axis deviation.

在一实施例中，采用离子注入的方式进行掺杂。离子注入工艺可以通过控制注入时的电学条件，比如电流、电压等可以精确控制注入的元素的浓度和结深，能更好的实现对杂质元素分布形状的控制，使第一电极结构200中的第一导电区域230a或绝缘区域240的分布情况和掺杂的元素浓度更加符合需求，而且离子注入工艺中掺杂的元素浓度不受原来材料固溶度的限制。In one embodiment, ion implantation is used for doping. The ion implantation process can accurately control the concentration and junction depth of the implanted elements by controlling the electrical conditions during implantation, such as current, voltage, etc., which can better control the distribution shape of impurity elements, and make the first electrode structure 200 The distribution of the first conductive region 230a or the insulating region 240 and the concentration of doped elements are more in line with requirements, and the concentration of doped elements in the ion implantation process is not limited by the solid solubility of the original material.

上述一实施例中提供的绝缘层和另一实施例中提供的第一导电类型导电层均为单层结构，并不需要像传统的MEMS电容传感器那样制作绝缘层来包覆导电层，不会出现多层薄膜堆栈造成的多层薄膜残余应力控制复杂、多层薄膜剥离和薄膜弯曲的问题。The insulating layer provided in the above-mentioned one embodiment and the first conductive type conductive layer provided in another embodiment are both single-layer structures, and there is no need to make an insulating layer to cover the conductive layer like a traditional MEMS capacitive sensor. The problems of complex residual stress control, multilayer film peeling and film bending caused by multilayer film stacks appear.

在一实施例中，参见图10，上述MEMS电容传感器的制备方法还包括：In an embodiment, referring to FIG. 10, the method for manufacturing the above-mentioned MEMS capacitive sensor further includes:

步骤S300，形成第二电极结构。Step S300, forming a second electrode structure.

参见图3或图4，第二电极结构300至少部分与第一导电区域230a相对 设置以形成电容结构。当第一电极结构200发生形变后，位于其中的第一导电区域230a的位置发生变化，使第一导电区域230a和第二电极结构300之间的间距改变，从而产生变化的电容。通过测量变化的电容的大小，可以得知使第一电极结构200发生形变的物理量的大小，比如空气声波、机械振动等。其中，空气声波或机械振动等压力可以来自第一电极结构200和第二电极结构300之间的间隙，使第一电极结构200向支撑结构100所在的一侧发生形变；压力也可以来自支撑结构100所在的一侧，使第一电极结构200向第二电极结构300所在的一侧发生形变。当第一电极结构200向支撑结构100所在的一侧发生形变时，第一导电区域230a和第二电极结构300之间的间距变大；当第一电极结构200向第二电极结构300所在的一侧发生形变时，第一导电区域230a和第二电极结构300之间的间距变小。Referring to FIG. 3 or FIG. 4, the second electrode structure 300 is at least partially disposed opposite to the first conductive region 230a to form a capacitor structure. When the first electrode structure 200 is deformed, the position of the first conductive area 230a located therein changes, which changes the distance between the first conductive area 230a and the second electrode structure 300, thereby generating a changed capacitance. By measuring the magnitude of the changing capacitance, the magnitude of the physical quantity that causes the first electrode structure 200 to deform, such as air acoustic waves, mechanical vibration, etc., can be known. Wherein, pressure such as air acoustic waves or mechanical vibration can come from the gap between the first electrode structure 200 and the second electrode structure 300, causing the first electrode structure 200 to deform toward the side where the support structure 100 is located; the pressure can also come from the support structure The side where 100 is located causes the first electrode structure 200 to deform toward the side where the second electrode structure 300 is located. When the first electrode structure 200 is deformed toward the side where the support structure 100 is located, the distance between the first conductive region 230a and the second electrode structure 300 becomes larger; when the first electrode structure 200 faces the second electrode structure 300 When one side is deformed, the distance between the first conductive region 230a and the second electrode structure 300 becomes smaller.

在其他实施例中，还可以在第一电极结构200远离第二电极结构300的一侧设置第三电极结构以形成双背板的结构，即形成差动变极距式电容传感器。In other embodiments, a third electrode structure may also be provided on the side of the first electrode structure 200 away from the second electrode structure 300 to form a double backplane structure, that is, to form a differential variable pitch capacitive sensor.

在一实施例中，参见图10，上述MEMS电容传感器的制备方法还包括：In an embodiment, referring to FIG. 10, the method for manufacturing the above-mentioned MEMS capacitive sensor further includes:

步骤S100，提供支撑结构。Step S100, providing a supporting structure.

第一电极结构200部分位于支撑结构100上。当第一电极结构200受到压力的作用时，支撑结构100对第一电极结构200起到支撑的作用，使第一电极结构200发生形变，参见图3或图4。支撑结构100包括基板110和形成于基板110上的牺牲层120。第一电极结构200部分位于牺牲层120上。The first electrode structure 200 is partially located on the support structure 100. When the first electrode structure 200 is subjected to pressure, the support structure 100 supports the first electrode structure 200 and deforms the first electrode structure 200, see FIG. 3 or FIG. 4. The support structure 100 includes a substrate 110 and a sacrificial layer 120 formed on the substrate 110. The first electrode structure 200 is partially located on the sacrificial layer 120.

在一实施例中，步骤S100的具体流程参见图17，包括以下步骤：In an embodiment, the specific process of step S100 is shown in FIG. 17, and includes the following steps:

步骤S110，提供基板。In step S110, a substrate is provided.

如图18所示，提供基板110。在步骤S110中还可以包括对基板110的清洗、烘干等。基板110可以是硅基板。硅具有强度高、耐磨性好等特点，能很好的支撑位于支撑结构100上的第一电极结构200，并且不易磨损，使制成的MEMS电容传感器的寿命更长。As shown in FIG. 18, a substrate 110 is provided. In step S110, cleaning and drying of the substrate 110 may also be included. The substrate 110 may be a silicon substrate. Silicon has the characteristics of high strength, good wear resistance, etc., can well support the first electrode structure 200 on the support structure 100, and is not easy to wear, so that the manufactured MEMS capacitive sensor has a longer life.

步骤S120，在基板上形成牺牲层。In step S120, a sacrificial layer is formed on the substrate.

如图19所示，牺牲层120位于基板110上，牺牲层120可以为介电氧化层，比如采用二氧化硅等。As shown in FIG. 19, the sacrificial layer 120 is located on the substrate 110, and the sacrificial layer 120 may be a dielectric oxide layer, such as silicon dioxide.

在一实施例中，如图20所示，上述MEMS电容传感器的方法还包括以下步骤：In an embodiment, as shown in FIG. 20, the above-mentioned method of the MEMS capacitive sensor further includes the following steps:

步骤S130，对基板进行刻蚀以形成对应于第一导电区域的背洞。Step S130, etching the substrate to form a back hole corresponding to the first conductive region.

如图21所示，对基板110进行刻蚀形成对应于第一导电区域230a的背洞400。可选地，使用深离子反应刻蚀(DRIE，Deep Reactive Ion Etching)的工艺对基板110进行刻蚀。As shown in FIG. 21, the substrate 110 is etched to form a back hole 400 corresponding to the first conductive region 230a. Optionally, the substrate 110 is etched using a deep ion reactive etching (DRIE, Deep Reactive Ion Etching) process.

步骤S140，去除与背洞相对的牺牲层，以裸露第一导电区域。Step S140, removing the sacrificial layer opposite to the back hole to expose the first conductive area.

如图22所示，去除与背洞400相对的牺牲层120，使第一导电区域230a裸露于背洞400中，从而使第一电极结构200受到压力的挤压而发生形变。压力可以来自于从背洞400中，使第一电极结构200向第二电极结构300的方向发生形变，第二电极结构300和位于第一电极结构200内的第一导电区域230a之间的间距变小。压力也可以来自于第一电极结构200远离背洞400的一侧，使第一电极结构200向背洞400一侧发生形变，第二电极结构300和位于第一电极结构200内的第一导电区域230a之间的间距变大。As shown in FIG. 22, the sacrificial layer 120 opposite to the back hole 400 is removed, so that the first conductive region 230a is exposed in the back hole 400, so that the first electrode structure 200 is squeezed by pressure and deformed. The pressure can come from the back hole 400, causing the first electrode structure 200 to deform in the direction of the second electrode structure 300. The distance between the second electrode structure 300 and the first conductive area 230a located in the first electrode structure 200 Become smaller. The pressure can also come from the side of the first electrode structure 200 away from the back hole 400, causing the first electrode structure 200 to deform toward the side of the back hole 400, and the second electrode structure 300 and the first conductive area located in the first electrode structure 200 The spacing between 230a becomes larger.

在一实施例中，上述步骤S140中去除与背洞400相对的牺牲层120时，可以使用湿法刻蚀的工艺，比如采用氢氟酸(HF)溶液对牺牲层120与背洞400相对的部分进行去除。HF溶液具有腐蚀二氧化硅特性，借由HF溶液可将第一电极结构200和基板110之间的牺牲层120的与背洞400相对的部分去除，使第一电极结构200和基板110分离。In one embodiment, when the sacrificial layer 120 opposite to the back hole 400 is removed in the above step S140, a wet etching process may be used, for example, a hydrofluoric acid (HF) solution is used to treat the sacrificial layer 120 opposite to the back hole 400. Part of the removal. The HF solution has the property of corroding silicon dioxide. The portion of the sacrificial layer 120 between the first electrode structure 200 and the substrate 110 opposite to the back hole 400 can be removed by the HF solution to separate the first electrode structure 200 from the substrate 110.

在其他实施例中，如图8所示，在牺牲层120上开设有通孔122以使第一电极结构200和基板110在通孔120内直接接触。上述MEMS电容传感器的制备方法还包括，在第一导电类型导电层和基板110的接触面形成具有第二预设宽度的第三绝缘区域124。在一实施例中，在第一导电类型导电层200与基板110的接触面掺杂与第一导电类型导电层的电极性相反的元素，以形成第三绝缘区域124，该实施例中的第三绝缘区域124形成于第一导电类型 导电层上，参见图8。在另一实施例中，在基板110与第一导电类型导电层的接触面掺杂与基板110的电极性相反的元素，以形成第三绝缘区域124，该实施例中的第三绝缘区域124形成于基板110上，参见图9。其中，基板110的电极性与第一导电类型导电层的电极性相同或者相反，第三绝缘区域124均可以对基板110和第一电极结构200之间进行电隔离。In other embodiments, as shown in FIG. 8, a through hole 122 is opened on the sacrificial layer 120 to make the first electrode structure 200 and the substrate 110 directly contact in the through hole 120. The manufacturing method of the aforementioned MEMS capacitive sensor further includes forming a third insulating region 124 with a second predetermined width on the contact surface of the first conductive type conductive layer and the substrate 110. In an embodiment, the contact surface of the first conductive type conductive layer 200 and the substrate 110 is doped with an element having the opposite polarity to that of the first conductive type conductive layer to form the third insulating region 124. In this embodiment, the first The three insulating regions 124 are formed on the conductive layer of the first conductivity type, see FIG. 8. In another embodiment, the contact surface of the substrate 110 and the conductive layer of the first conductivity type is doped with an element opposite to the polarity of the substrate 110 to form a third insulating region 124. The third insulating region 124 in this embodiment It is formed on the substrate 110, see FIG. 9. Wherein, the electrical polarity of the substrate 110 is the same as or opposite to that of the first conductive type conductive layer, and the third insulating region 124 can electrically isolate the substrate 110 and the first electrode structure 200.

可以理解，本案中所有的附图的尺寸不代表实际比例，且仅仅为示意图。It can be understood that the dimensions of all the drawings in this case do not represent actual ratios, and are merely schematic diagrams.

以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, All should be considered as the scope of this specification.

以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。The above-mentioned embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the invention patent. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of this application, several modifications and improvements can be made, and these all fall within the protection scope of this application. Therefore, the scope of protection of the patent of this application shall be subject to the appended claims.

Claims (30)

1. 一种MEMS电容传感器，其特征在于，包括：A MEMS capacitive sensor, characterized in that it comprises:

   第一电极结构，包括位于中间区域的第一导电区域以及所述第一导电区域周围的绝缘区域，所述第一导电区域和所述绝缘区域为一整体结构，且其中至少一个通过掺杂方式形成。The first electrode structure includes a first conductive region in the middle region and an insulating region around the first conductive region. The first conductive region and the insulating region are an integral structure, and at least one of them is doped form.
2. 根据权利要求1所述的MEMS电容传感器，其特征在于，所述第一导电区域通过掺杂方式形成，所述第一导电区域为P型导电类型区或N型导电类型区。The MEMS capacitive sensor according to claim 1, wherein the first conductive region is formed by doping, and the first conductive region is a P-type conductivity type region or an N-type conductivity type region.
3. 根据权利要求2所述的MEMS电容传感器，其特征在于，在所述第一导电区域为P型导电类型区时，其掺杂元素为硼；在所述第一导电区域为N型导电类型区时，其掺杂元素为磷。The MEMS capacitive sensor according to claim 2, wherein when the first conductive region is a P-type conductivity type region, the doping element is boron; when the first conductive region is an N-type conductivity type region When the doping element is phosphorus.
4. 根据权利要求1所述的MEMS电容传感器，其特征在于，所述第一电极结构还包括第二导电区域，所述绝缘区域位于所述第一导电区域和所述第二导电区域之间，所述绝缘区域通过掺杂方式形成，所述绝缘区域具有第一预设宽度。The MEMS capacitive sensor according to claim 1, wherein the first electrode structure further comprises a second conductive region, and the insulating region is located between the first conductive region and the second conductive region, so The insulating region is formed by doping, and the insulating region has a first predetermined width.
5. 根据权利要求4所述的MEMS电容传感器，其特征在于，所述第一导电区域、所述第二导电区域以及所述绝缘区域均包括第一导电类型掺杂元素，所述绝缘区域进一步包括与所述第一导电类型掺杂元素的电极性相反的第二导电类型掺杂元素。The MEMS capacitive sensor according to claim 4, wherein the first conductive region, the second conductive region, and the insulating region all include a first conductivity type doping element, and the insulating region further includes The doping element of the first conductivity type has the opposite electrical polarity of the doping element of the second conductivity type.
6. 根据权利要求5所述的MEMS电容传感器，其特征在于，所述绝缘区域的第一导电类型掺杂元素和所述第二导电类型掺杂元素的浓度相同。The MEMS capacitive sensor according to claim 5, wherein the concentration of the first conductivity type doping element and the second conductivity type doping element of the insulating region are the same.
7. 根据权利要求5所述的MEMS电容传感器，其特征在于，所述第一导电类型为P型导电类型。The MEMS capacitive sensor according to claim 5, wherein the first conductivity type is a P-type conductivity type.
8. 根据权利要求7所述的MEMS电容传感器，其特征在于，所述第二导电类型掺杂元素为磷。8. The MEMS capacitive sensor according to claim 7, wherein the doping element of the second conductivity type is phosphorus.
9. 根据权利要求5所述的MEMS电容传感器，其特征在于，所述第一导电类型为N型导电类型。The MEMS capacitive sensor according to claim 5, wherein the first conductivity type is an N-type conductivity type.
10. 根据权利要求9所述的MEMS电容传感器，其特征在于，所述第二导电类型掺杂元素为硼。The MEMS capacitive sensor according to claim 9, wherein the doping element of the second conductivity type is boron.
11. 根据权利要求4所述的MEMS电容传感器，其特征在于，所述第一第一预设宽度为2微米～20微米。The MEMS capacitive sensor according to claim 4, wherein the first first predetermined width is 2 micrometers to 20 micrometers.
12. 根据权利要求11所述的MEMS电容传感器，其特征在于，所述第一第一预设宽度为10微米。The MEMS capacitive sensor according to claim 11, wherein the first predetermined width is 10 microns.
13. 根据权利要求4所述的MEMS电容传感器，其特征在于，所述第二导电区域还包括第二绝缘区域，以将所述第二导电区域划分为多个被所述第二绝缘区域所间隔的第二导电子区域。The MEMS capacitive sensor according to claim 4, wherein the second conductive area further comprises a second insulating area, so as to divide the second conductive area into a plurality of spaces separated by the second insulating area. The second conductive sub-region.
14. 根据权利要求1所述的MEMS电容传感器，其特征在于，还包括第二电极结构，所述第二电极结构至少部分与所述第一导电区域相对设置以形成电容结构。The MEMS capacitive sensor according to claim 1, further comprising a second electrode structure, and the second electrode structure is at least partially disposed opposite to the first conductive area to form a capacitive structure.
15. 根据权利要求1所述的MEMS电容传感器，其特征在于，还包括支撑结构，所述支撑结构包括：The MEMS capacitive sensor according to claim 1, further comprising a supporting structure, the supporting structure comprising:

    基板，以及Substrate, and

    形成于所述基板上的牺牲层；所述第一电极结构部分位于所述牺牲层上；所述基板和所述牺牲层上开设有用于裸露所述第一导电区域的背洞。A sacrificial layer formed on the substrate; the first electrode structure is partially located on the sacrificial layer; the substrate and the sacrificial layer are provided with a back hole for exposing the first conductive area.
16. 根据权利要求15所述的MEMS电容传感器，其特征在于，所述绝缘区域至少部分被所述背洞所裸露。The MEMS capacitive sensor according to claim 15, wherein the insulating area is at least partially exposed by the back hole.
17. 根据权利要求15所述的MEMS电容传感器，其特征在于，所述第一电极结构还包括第二导电区域，所述绝缘区域位于所述第一导电区域和所述第二导电区域之间，所述绝缘区域通过掺杂方式形成，所述绝缘区域具有第一预设宽度；所述第一导电区域、所述第二导电区域以及所述绝缘区域均包括第一导电类型掺杂元素，所述绝缘区域进一步包括与所述第一导电类型掺杂元素的电极性相反的第二导电类型掺杂元素；The MEMS capacitive sensor according to claim 15, wherein the first electrode structure further comprises a second conductive region, and the insulating region is located between the first conductive region and the second conductive region, so The insulating region is formed by a doping method, and the insulating region has a first predetermined width; the first conductive region, the second conductive region, and the insulating region all include a first conductivity type doping element, the The insulating region further includes a second conductivity type doping element that has a polarity opposite to that of the first conductivity type doping element;

    所述牺牲层上开设有通孔以使所述第一电极结构和所述基板在所述通孔内直接接触，所述基板的电极性与所述第一导电类型掺杂元素的电极性相同 或相反；The sacrificial layer is provided with a through hole to make the first electrode structure and the substrate directly contact in the through hole, and the electrical polarity of the substrate is the same as that of the first conductivity type doping element Or vice versa

    所述第一电极结构与所述基板的接触面还设有第三绝缘区域，所述第三绝缘区域具有第二预设宽度，所述第三绝缘区域包括具有相反电极性的第一导电类型掺杂元素和第二导电类型掺杂元素。The contact surface of the first electrode structure and the substrate is further provided with a third insulating area, the third insulating area has a second predetermined width, and the third insulating area includes a first conductivity type with opposite electrical polarity The doping element and the second conductivity type doping element.
18. 一种电子设备，包括电子设备本体，其特征在于，还包括设置于所述电子设备本体上的如权利要求1～17任一所述的MEMS电容传感器。An electronic device, comprising an electronic device body, which is characterized in that it further comprises the MEMS capacitance sensor according to any one of claims 1 to 17 arranged on the electronic device body.
19. 一种MEMS电容传感器的制备方法，其特征在于，包括：A method for preparing a MEMS capacitive sensor, which is characterized in that it comprises:

    形成第一电极结构；所述第一电极结构包括位于中间区域的第一导电区域以及所述第一导电区域周围的绝缘区域，所述第一导电区域和所述绝缘区域为一整体结构，且其中至少一个通过掺杂方式形成。A first electrode structure is formed; the first electrode structure includes a first conductive area located in the middle area and an insulating area around the first conductive area, the first conductive area and the insulating area are an integral structure, and At least one of them is formed by doping.
20. 根据权利要求19所述的方法，其特征在于，所述形成第一电极结构的步骤包括：The method of claim 19, wherein the step of forming the first electrode structure comprises:

    提供绝缘层；以及Provide insulation; and

    在所述绝缘层的中间区域进行掺杂以形成所述第一导电区域。Doping is performed in the middle region of the insulating layer to form the first conductive region.
21. 根据权利要求19所述的方法，其特征在于，所述第一电极结构还包括第二导电区域，所述绝缘区域位于所述第一导电区域和所述第二导电区域之间，所述形成第一电极结构的步骤包括：The method according to claim 19, wherein the first electrode structure further comprises a second conductive region, the insulating region is located between the first conductive region and the second conductive region, and the forming The steps of the first electrode structure include:

    提供第一导电类型导电层；以及Providing a conductive layer of the first conductivity type; and

    在所述第一导电类型导电层掺杂与其电极性相反的第二导电类型掺杂元素以形成所述绝缘区域，所述绝缘区域具有第一预设宽度。The first conductivity type conductive layer is doped with a second conductivity type doping element opposite to its polarity to form the insulating region, and the insulating region has a first predetermined width.
22. 根据权利要求21所述的方法，其特征在于，所述第一导电类型导电层掺杂有第一导电类型掺杂元素，所述绝缘区域中第一导电类型掺杂元素和所述第二导电类型掺杂元素的浓度相同。22. The method of claim 21, wherein the first conductivity type conductive layer is doped with a first conductivity type doping element, and the first conductivity type doping element and the second conductivity type in the insulating region The concentration of type doping elements is the same.
23. 根据权利要求21所述的方法，其特征在于，所述第一导电类型导电层为P型导电类型层或N型导电类型层。The method according to claim 21, wherein the first conductivity type conductive layer is a P type conductivity type layer or an N type conductivity type layer.
24. 根据权利要求23所述的方法，其特征在于，所述第一导电类型导电层为P型导电类型层时，所述第二导电类型掺杂元素为磷。22. The method of claim 23, wherein when the first conductivity type conductive layer is a P type conductivity type layer, the second conductivity type doping element is phosphorus.
25. 根据权利要求23所述的方法，其特征在于，所述第一导电类型导电层为N型导电类型层时，所述第二导电类型掺杂元素为硼。22. The method of claim 23, wherein when the first conductivity type conductive layer is an N type conductivity type layer, the second conductivity type doping element is boron.
26. 根据权利要求19所述的方法，其特征在于，采用离子注入的方式进行掺杂。The method of claim 19, wherein the doping is performed by ion implantation.
27. 根据权利要求19所述的方法，其特征在于，还包括：The method according to claim 19, further comprising:

    形成第二电极结构；所述第二电极结构至少部分与所述第一导电区域相对设置以形成电容结构。A second electrode structure is formed; the second electrode structure is at least partially disposed opposite to the first conductive area to form a capacitor structure.
28. 根据权利要求19所述的方法，其特征在于，还包括：The method according to claim 19, further comprising:

    提供支撑结构，所述支撑结构包括基板和形成于所述基板上的牺牲层，所述第一电极结构部分位于所述牺牲层上；Providing a supporting structure, the supporting structure comprising a substrate and a sacrificial layer formed on the substrate, and the first electrode structure is partially located on the sacrificial layer;

    对所述基板进行刻蚀以形成对应于所述第一导电区域的背洞；以及Etching the substrate to form a back hole corresponding to the first conductive region; and

    去除与所述背洞相对的牺牲层，以裸露所述第一导电区域。The sacrificial layer opposite to the back hole is removed to expose the first conductive area.
29. 根据权利要求28所述的方法，其特征在于，采用湿法刻蚀工艺对所述牺牲层进行去除。The method of claim 28, wherein the sacrificial layer is removed by using a wet etching process.
30. 根据权利要求28所述的方法，其特征在于，所述第一电极结构还包括第二导电区域，所述绝缘区域位于所述第一导电区域和所述第二导电区域之间，所述形成第一电极结构的步骤包括：The method of claim 28, wherein the first electrode structure further comprises a second conductive region, and the insulating region is located between the first conductive region and the second conductive region, and the forming The steps of the first electrode structure include:

    提供第一导电类型导电层；以及Providing a conductive layer of the first conductivity type; and

    在所述第一导电类型导电层掺杂与其电极性相反的第二导电类型掺杂元素以形成所述绝缘区域，所述绝缘区域具有第一预设宽度；Doping the first conductivity type conductive layer with a second conductivity type doping element opposite to its polarity to form the insulating region, the insulating region having a first preset width;

    所述牺牲层上开设有通孔，以使所述第一导电类型导电层和所述基板在所述通孔内直接接触，所述基板的电极性与所述第一导电类型导电层的电极性相同或相反；The sacrificial layer is provided with a through hole, so that the first conductive type conductive layer and the substrate directly contact in the through hole, and the electrical polarity of the substrate is the same as the electrode of the first conductive type conductive layer Same or opposite sex;

    所述MEMS电容传感器的制备方法还包括，在所述第一导电类型导电层和所述基板的接触面形成具有第二预设宽度的第三绝缘区域，所述第三绝缘区域通过掺杂与所述第一导电类型导电层电极性相反的元素或者掺杂与所述基板的电极性相反的元素形成。The manufacturing method of the MEMS capacitive sensor further includes forming a third insulating region having a second preset width on the contact surface of the first conductivity type conductive layer and the substrate, and the third insulating region is doped with The conductive layer of the first conductivity type is formed by doping an element with opposite electrical polarity or doping with an element with opposite electrical polarity of the substrate.

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