WO2020230742A1 - Semiconductor light-emitting device for plant growth, lighting method, and design method - Google Patents

Semiconductor light-emitting device for plant growth, lighting method, and design method Download PDF

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WO2020230742A1
WO2020230742A1 PCT/JP2020/018736 JP2020018736W WO2020230742A1 WO 2020230742 A1 WO2020230742 A1 WO 2020230742A1 JP 2020018736 W JP2020018736 W JP 2020018736W WO 2020230742 A1 WO2020230742 A1 WO 2020230742A1
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light emitting
semiconductor light
emitting device
wavelength
emission
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PCT/JP2020/018736
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French (fr)
Japanese (ja)
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義英 中澤
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シチズン電子株式会社
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Priority to JP2021519416A priority Critical patent/JP7145328B2/en
Publication of WO2020230742A1 publication Critical patent/WO2020230742A1/en

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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G7/00—Botany in general
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/38—Combination of two or more photoluminescent elements of different materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

Definitions

  • the present invention relates to a semiconductor light emitting device for efficiently growing plants.
  • JP-A-2016-122722 Japanese Unexamined Patent Publication No. 2011-200204
  • the present invention provides a new semiconductor light emitting device for plant growth that can efficiently grow plants and the appearance of colors for grasping the degree of growth of plants.
  • the present inventors have conducted research in order to solve the above problems, and in the spectrum of light emitted from the semiconductor light emitting device, the green region is provided with a certain amount of light emission intensity, and the change in the light emission intensity is made gentle. We have found that the problem can be solved and completed the present invention.
  • One embodiment of the present invention is a semiconductor light emitting device for growing a plant, which comprises at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
  • the light emitted from the semiconductor light emitting device is a semiconductor light emitting device for plant growth, which satisfies ⁇ 0.050 ⁇ Duv ⁇ ⁇ 0.030 and its spectrum satisfies the following (i).
  • (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. Satisfy 3 or less
  • another embodiment of the present invention is a semiconductor light emitting device for growing a plant, which includes at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
  • a semiconductor light emitting device for plant growth wherein the spectrum of light emitted from the semiconductor light emitting device satisfies the following (ii). (Ii) the vertical axis (Y), the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), horizontal axis (X) in the graph the wavelength (nm), and the I BG, wavelength 555nm
  • the slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 in the above satisfies 0 ⁇ a ⁇ 0.004.
  • the spectrum of the light emitted from the semiconductor light emitting device further satisfies the following (iii) and / or (iv). Further, it is preferable to satisfy the following (v).
  • the red phosphor preferably contains a nitride phosphor, and preferably contains a red phosphor having a half width of 75 nm or more.
  • the green phosphor preferably contains a green phosphor having a peak wavelength of 510 nm or more and 540 nm or less and a half width of 100 nm or more and 120 nm or less.
  • Another embodiment of the present invention is a lighting method including at least a lighting step of irradiating a plant with light emitted from a semiconductor light emitting device including a blue semiconductor light emitting device and a phosphor.
  • the lighting step when the light emitted from the semiconductor light emitting device illuminates the plant, the light measured at the position of the plant satisfies ⁇ 0.050 ⁇ Duv ⁇ ⁇ 0.030, and the spectrum thereof is as follows.
  • a lighting method that satisfies (i) and (ii).
  • (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0.
  • the vertical axis (Y) satisfying 3 or less is the relative emission intensity (%) with the emission peak intensity of the spectrum as 100%, and the horizontal axis (X) is the wavelength (nm)
  • the IBG And the slope a of the straight line connecting the emission intensity I 555 at the wavelength of 555 nm satisfies 0 ⁇ a ⁇ 0.004.
  • the distance between the semiconductor light emitting device and the plant is 10 cm to 60 cm and the semiconductor light emitting device has an SMD configuration, and the distance between the semiconductor light emitting device and the plant is 60 cm to 2 m. It is preferable that the semiconductor light emitting device has a COB configuration.
  • another embodiment of the present invention designs a spectrum of light emitted from a plant growing semiconductor light emitting device including at least a blue semiconductor light emitting device and a wavelength conversion layer containing a green phosphor and a red phosphor. It ’s a method, The step of preparing the wavelength conversion layer so that the light emitted from the semiconductor light emitting device satisfies ⁇ 0.050 ⁇ Duv ⁇ ⁇ 0.030 and the spectrum satisfies the following (i) and (ii). , Including, is a design method.
  • (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0.
  • the vertical axis (Y) satisfying 3 or less is the relative emission intensity (%) with the emission peak intensity of the spectrum as 100%, and the horizontal axis (X) is the wavelength (nm)
  • the IBG And the slope a of the straight line connecting the emission intensity I 555 at the wavelength of 555 nm satisfies 0 ⁇ a ⁇ 0.004.
  • the present invention it is possible to provide a new semiconductor light emitting device for plant growth that can achieve both efficient growth of plants and color appearance for grasping the degree of growth of plants. Further, since the red phosphor is used instead of the red semiconductor light emitting element, the spectrum balance can be maintained even if it is used for a long time. Moreover, since only one type of semiconductor light emitting element is used, the drive circuit can be simplified.
  • One embodiment of the present invention is a semiconductor light emitting device for growing a plant, which comprises at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
  • the light emitted from the semiconductor light emitting device is a semiconductor light emitting device for plant growth, which satisfies ⁇ 0.050 ⁇ Duv ⁇ ⁇ 0.030 and its spectrum satisfies the following (i).
  • (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. 3 or less is satisfied.
  • Another embodiment of the present invention is a semiconductor light emitting device for growing a plant, which includes at least a blue semiconductor light emitting element, a green phosphor, and a red phosphor.
  • a semiconductor light emitting device for plant growth wherein the spectrum of light emitted from the semiconductor light emitting device satisfies the following (ii). (Ii) the vertical axis (Y), the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), horizontal axis (X) in the graph the wavelength (nm), and the I BG, wavelength 555nm
  • the slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 in the above satisfies 0 ⁇ a ⁇ 0.004.
  • the blue semiconductor light emitting device is a semiconductor light emitting device having a normal emission peak wavelength range of 430 nm or more and 490 nm or less.
  • the lower limit of the emission peak wavelength of the blue semiconductor light emitting device may be 435 nm and may be 440 nm.
  • the upper limit of the emission peak wavelength may be 480 nm or less, 475 nm or less, or 470 nm or less.
  • the semiconductor light emitting device may have only one blue semiconductor light emitting element, or may have a plurality of blue semiconductor light emitting elements. When there are a plurality of blue semiconductor light emitting elements, the blue semiconductor light emitting elements may be arranged linearly or planarly, and the arrangement may have regularity or may be at random.
  • the green phosphor is a phosphor having a normal emission peak wavelength range of 490 nm or more and 570 nm or less.
  • the emission peak wavelength may be 495 nm or more, 500 nm or more, and 510 nm or more. Further, it may be 560 nm or less, 550 nm or less, and 540 nm or less.
  • the half-value width of the green phosphor is not particularly limited, but the half-value width may be 60 nm or more, 70 nm or more, 80 nm or more, 90 nm or more, or 100 nm or more. Further, it may be 130 nm or less, 120 nm or less, 115 nm or less, and 110 nm or less.
  • the red phosphor is a phosphor having a normal emission peak wavelength range of 590 nm or more and 700 nm or less.
  • the emission peak wavelength may be 600 nm or more, and may be 610 nm or more. Further, it may be 680 nm or less, and may be 660 nm or less.
  • the half-value width of the red phosphor is not particularly limited, but the half-value width may be 1 nm or more, 2 nm or more, 15 nm or less, and 10 nm or less. In another example, the full width at half maximum may be 70 nm or more, 75 nm or more, 80 nm or more, 90 nm or more, 120 nm or less, 115 nm or less. , 110 nm or less, and may be 100 nm or less.
  • green phosphor, aluminate was Ce 3+ and activator, yttrium aluminum oxide and activator of Ce 3+, Eu 2+ activated alkaline-earth silicate crystals, Eu 2+ -activated
  • green phosphors based on alkaline earth silicate nitride These green phosphors can usually be excited using a blue semiconductor light emitting device.
  • Ce 3+ activated aluminate phosphor examples include a green phosphor represented by the following general formula (2).
  • the Ce 3+ activated aluminate phosphor represented by the general formula (2) is called a G-YAG phosphor.
  • Ce 3+ activated yttrium aluminum oxide-based phosphor examples include a green phosphor represented by the following general formula (3).
  • the Ce 3+ activated yttrium aluminum oxide-based phosphor represented by the general formula (3) is called a LuAG phosphor.
  • green phosphors represented by the following general formula (4) and the following general formula (5) can be mentioned.
  • M 1 a M 2 b M 3 c Od (4) (In the general formula (4), M 1 represents a divalent metal element, M 2 represents a trivalent metal element, M 3 represents a tetravalent metal element, and a, b, c and d are 2.7. ⁇ a ⁇ 3.3, 1.8 ⁇ b ⁇ 2.2, 2.7 ⁇ c ⁇ 3.3, 11.0 ⁇ d ⁇ 13.0.)
  • the phosphor represented by the general formula (4) is called a CSMS phosphor.
  • M 1 is a divalent metal element, but it is preferably at least one selected from the group consisting of Mg, Ca, Zn, Sr, Cd, and Ba, and Mg is preferable. , Ca, or Zn, and Ca is particularly preferable. In this case, Ca may be a single system or a composite system with Mg. Further, M 1 may contain other divalent metal elements.
  • M 2 is a trivalent metal element, it is preferably at least one selected from the group consisting of Al, Sc, Ga, Y, In, La, Gd, and Lu, and is preferably Al, Sc, Y, Or Lu is more preferable, and Sc is particularly preferable.
  • Sc may be a single system or a complex system with Y or Lu.
  • M 2 is an essential to include Ce, M 2 may contain other trivalent metal elements.
  • M 3 is a tetravalent metal element, but preferably contains at least Si.
  • the tetravalent metal element M 3 other than Si it is preferable that it is at least one selected from the group consisting of Ti, Ge, Zr, Sn, and Hf, and Ti, Zr, Sn, and Hf. It is more preferable that it is at least one selected from the group consisting of, and it is particularly preferable that it is Sn.
  • M 3 is Si.
  • M 3 may contain other tetravalent metal elements.
  • the lower limit of the percentage of total M 2 of Ce contained in M 2 is 0.01 or more, more preferably 0.02 or more.
  • the upper limit of the percentage of total M 2 of Ce contained in M 2 is preferably 0.10 or less, more preferably 0.06 or less.
  • the lower limit of the ratio of Mg contained in the M 1 element to the entire M 1 is preferably 0.01 or more, and more preferably 0.03 or more.
  • the upper limit is preferably 0.30 or less, and more preferably 0.10 or less.
  • M 1 a M 2 b M 3 c Od (5)
  • M 1 represents an activator element containing at least Ce
  • M 2 represents a divalent metal element
  • M 3 represents a trivalent metal element
  • a, b, c and d are 0.0001 ⁇ a ⁇ 0.2, 0.8 ⁇ b ⁇ 1.2, 1.6 ⁇ c ⁇ 2.4, and 3.2 ⁇ d ⁇ 4.8 are satisfied.
  • the phosphor represented by the general formula (5) is called a CSO phosphor.
  • M 1 is an activator element contained in the crystal matrix and contains at least Ce. Further, at least one 2 to 4 selected from the group consisting of Cr, Mn, Fe, Co, Ni, Cu, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb. It can contain valent elements.
  • M 2 is a divalent metal element, it is preferably at least one selected from the group consisting of Mg, Ca, Zn, Sr, Cd, and Ba, and is preferably Mg, Ca, or Sr. Is more preferable, and it is particularly preferable that 50 mol% or more of the element of M 2 is Ca.
  • M 3 is a trivalent metal element, it is preferably at least one selected from the group consisting of Al, Sc, Ga, Y, In, La, Gd, Yb, and Lu, preferably Al, Sc, Yb, or more preferably in the range of Lu, Sc, or Sc and Al, or more preferably more that is Sc and Lu, and particularly preferably 50 mol% or more of the elements of M 3 is Sc.
  • M 2 and M 3 represent divalent and trivalent metal elements, respectively, but a small part of M 2 and / or M 3 is used as a metal element having a valence of either monovalent, tetravalent, or pentavalent.
  • trace amounts of anions such as halogen elements (F, Cl, Br, I), nitrogen, sulfur, selenium and the like may be contained in the compound.
  • a specific example of a phosphor based on Eu 2+ activated alkaline earth silicate crystals is a green phosphor represented by the following general formula (6).
  • the alkaline earth silicate phosphor represented by the general formula (6) is called a BSS phosphor.
  • a specific example of a phosphor based on Eu 2+ activated alkaline earth silicate nitride is a green phosphor represented by the following general formula (7).
  • the phosphor represented by the general formula (7) is called a BSON phosphor.
  • the divalent metal elements (Ba, Ca, Sr, Mg, Zn, Eu) that can be selected in the general formula (7), it is preferable to use a combination of Ba, Sr, and Eu, and further, the ratio of Sr to Ba is More preferably, it is 10 to 30%.
  • Yttrium aluminum garnet-based phosphor (this is called a YAG phosphor) represented by (.5) and Ca 1.5x La 3-X Si 6 N 11 : Ce (where x is It may contain a yellow phosphor such as a lanthanum silicon nitride phosphor represented by 0 ⁇ x ⁇ 1) (this is referred to as an LSN phosphor).
  • SiAlON phosphor) and Ca 8 MgSi 4 O 16 Cl 2 : Eu this is called a chlorosilicate fluorescent substance.
  • Sr 3 Si 13 Al 3 O 2 N 21 Eu 2+ phosphor and (Ca, Sr) Ga 2 S 4 : Eu 2+ phosphor may be contained.
  • green phosphor only one kind of green phosphor may be used, or two or more kinds may be used in combination.
  • red phosphor examples include a fluorescent substance using Eu 2+ as an activator and having a crystal composed of an alkaline earth silicate, ⁇ -sialon or an alkaline earth silicate as a base. This type of red phosphor can usually be excited using a blue semiconductor light emitting device.
  • alkaline earth silica nitride crystals include a phosphor represented by CaAlSiN 3 : Eu (this is called a CASN phosphor), (Ca, Sr, Ba, Mg) AlSiN 3 : Eu.
  • Mn 4+ activated fluoride complex phosphors can also be mentioned.
  • the Mn 4+ activated fluoride complex phosphor is a phosphor having Mn 4+ as an activator and a fluoride complex salt of an alkali metal, an amine or an alkaline earth metal as a parent crystal.
  • the fluoride complex forming the parent crystal has a coordination center of a trivalent metal (B, Al, Ga, In, Y, Sc, lanthanoid) and a tetravalent metal (Si, Ge, Sn, Ti, Zr, Re, Hf) and pentavalent metals (V, P, Nb, Ta) are available, and the number of fluorine atoms coordinated around them is 5 to 7.
  • Mn 4+ -activated fluoride complex phosphor the alkali metal hexafluoro complex salt as host crystals A 2 + x M y Mn z F n (A is Na and / or K; M is Si and Al -1 ⁇ x ⁇ 1 and 0.9 ⁇ y + z ⁇ 1.1 and 0.001 ⁇ z ⁇ 0.4 and 5 ⁇ n ⁇ 7).
  • K potassium or Na (sodium) from one or more selected
  • M is Si (silicon) or Ti (titanium) or Ge (germanium), for example, K 2 SiF 6: Mn (This is called a KSF phosphor), K 2 Si 1-x Na x Al x F 6 : Mn (this is KSNAF fluorescence) in which a part (preferably 10 mol% or less) of this constituent element is replaced with Al and Na. (Called the body) and the like.
  • a phosphor represented by the following general formula (8) and a phosphor represented by the following general formula (9) can also be mentioned.
  • (La 1-x-y Eu x Ln y) 2 O 2 S (8) (In the general formula (8), x and y represent numbers satisfying 0.02 ⁇ x ⁇ 0.50 and 0 ⁇ y ⁇ 0.50, respectively, and Ln is of Y, Gd, Lu, Sc, Sm and Er. Represents at least one trivalent rare earth element.)
  • the lanthanum acid sulfide phosphor represented by the general formula (8) is called a LOS phosphor.
  • k, x, and y represent numbers satisfying 2.8 ⁇ k ⁇ 5, 0.1 ⁇ x ⁇ 0.7, and 0.005 ⁇ y ⁇ 0.015, respectively.
  • A is calcium (Ca), strontium (Sr), barium (Ba), zinc (Zn), or a mixture thereof.
  • the germanate phosphor represented by the general formula (9) is called an MGOF phosphor.
  • SrSi 7 Al 3 O 2 N 13 Eu 2+ phosphor and CaS: Eu 2+ phosphor may be contained.
  • red fluorescent material only one type of red fluorescent material may be used, or two or more types may be used in combination.
  • the semiconductor light emitting device of the present embodiment may include other phosphors in addition to the above green phosphor and red phosphor.
  • examples of other phosphors include a blue phosphor, a yellow fluorescent substance, an orange fluorescent substance, and the like.
  • the spectrum of light emitted by the semiconductor light emitting device of the present embodiment can satisfy ⁇ 0.050 ⁇ Duv ⁇ ⁇ 0.030.
  • Duv is below -0.050, the plant may appear red or dark.
  • ⁇ 0.030 the light intensity in the wavelength range that does not contribute to photosynthesis becomes high, and it may be difficult to grow plants efficiently.
  • the semiconductor light emitting device of the present embodiment can satisfy the above requirements (i) and / or (ii).
  • the bottom peak (minimum emission value: IBG ) of the emission spectrum exists between the blue region and the green region, and the emission intensity of the bottom peak is the peak intensity (maximum emission value) in the red region.
  • IBG minimum emission value
  • the emission intensity of the bottom peak is the peak intensity (maximum emission value) in the red region.
  • the requirement (ii) means that the change in the spectrum from the bottom peak wavelength between the blue region and the green region to the wavelength of 555 nm is gentle. That is, the vertical axis (Y), the graph of the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), transverse axis (X) and the wavelength (nm), and the I BG, at a wavelength of 555nm
  • the slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 satisfies 0 ⁇ a ⁇ 0.004.
  • the upper limit of the slope a may be 0.0038 or less, 0.0036 or less, 0.0034 or less, 0.0032 or less, 0.003 or less. Good. Since there is no sudden change in the spectrum of the green region, especially the region up to 555 nm where the luminosity factor is maximized, the Duv value tends to be in a specific range, and the plant looks red and dark. , Can be prevented.
  • the semiconductor light emitting device of the present embodiment further preferably satisfies the following (iii).
  • (Iii) Wavelength 400nm or 500nm in the following areas have an emission maximum value I B, 0.8 ⁇ I B / I above requirements satisfying R ⁇ 1.3
  • (iii) is, of the light emitted from the semiconductor light emitting device in the spectrum, the emission peak intensity of the blue region (emission maximum value I B) and the emission peak intensity of the red region (emission maximum values: I R) indicate that are substantially the same.
  • the light absorption balance between the photoreceptors chlorophyll a and chlorophyll b of the chloroplast that performs photosynthesis is good, and photosynthesis can be efficiently performed.
  • the I B / I R is 0.8 to 1.2, also 1.0, i.e., emission maxima I R is preferably made as emission maxima in the entire spectrum.
  • the semiconductor light emitting device of the present embodiment further preferably satisfies the following (iv).
  • (iv) the spectrum emitted from the semiconductor light emitting device means having an emission maximum value I R in 650nm or longer wavelength region .
  • the wavelength of light that contributes to photosynthesis is considered to be 400 nm to 700 nm, but the present inventors have confirmed that light in a long wavelength region exceeding 700 nm also contributes to photosynthesis. Therefore, for a spectrum having an emission intensity in the above region 700 nm, preferably has an emission maximum value I R in 650nm or longer wavelength region.
  • the semiconductor light emitting device of the present embodiment further preferably satisfies the following (v).
  • (V) In the range from the wavelength ⁇ I BG nm of the emission minimum value I BG to the wavelength 555 nm, the emission intensity I 555 at the wavelength 555 nm is the maximum value of the emission intensity.
  • the above requirement (v) is that the spectrum emitted from the semiconductor light emitting device is In the range from the wavelength ⁇ I BG nm of the emission minimum value I BG to the wavelength 555 nm, the intensity does not decrease as the wavelength becomes longer, which means that there is no top peak in the region.
  • a semiconductor light emitting device that emits a spectrum that satisfies the above Duv conditions and the conditions (i) to (v)
  • LuAG LuAG
  • a wideband green phosphor it is easy to form a spectrum having a certain degree of emission intensity in the medium wavelength region of 500 nm to 600 nm, and by having a wide range of emission intensity in the medium wavelength region, color appearance can be reproduced. Great contribution to sex.
  • the broadband red phosphor when a SCASN phosphor or a CASN phosphor, which is a nitride phosphor, is used as the broadband red phosphor, it is easy to form a spectrum having a large emission intensity in a long wavelength region (red region) of 600 nm or more, and for photosynthesis.
  • the amount of energy required in the red region is larger than that in the case where the red semiconductor light emitting element is used as the light emitting source in the red region, which is preferable for growing plants.
  • the configuration of the semiconductor light emitting device described above is not particularly limited, and usually, a sealing resin in which a semiconductor light emitting element is mounted on a substrate and various phosphors are mixed (a form of a wavelength conversion layer described below). It has a structure in which a semiconductor light emitting element is sealed with.
  • the sealing resin is a form of the wavelength conversion layer described below.
  • the substrate is typically a ceramic substrate or an aluminum substrate, and may be a laminated substrate in which an aluminum substrate and a glass epoxy substrate are laminated, and is not particularly limited.
  • the shape of the substrate is also not particularly limited, and is typically a rectangle such as a square or a rectangle, and has a light emitting region (wavelength conversion region or sealing region) such as a rectangle, a circle, or an ellipse on such a substrate. ..
  • the form of the semiconductor light emitting device may be a bullet-shaped LED, an SMD (surface mount device), or a COB (chip on board).
  • SMD surface mount device
  • COB chip on board
  • the SMD configuration is more preferable for plant irradiation in an environment where the distance from the plant is short because of its light distribution characteristics.
  • the distance between the semiconductor light emitting device and the plant is short, if the COB configuration has a high output, the light intensity of the portion near the center of the light emitting region becomes strong, and the irradiation light may become non-uniform with respect to the plant. is there. Therefore, when the distance between the semiconductor light emitting device and the plant is about 10 cm to 60 cm, it is preferable to illuminate the semiconductor light emitting device as an SMD configuration having a small light emitting surface.
  • the COB configuration since the COB configuration has a high output, it is preferable to illuminate the semiconductor light emitting device as the COB configuration when the distance between the semiconductor light emitting device and the plant is about 60 cm to 2 m.
  • a long COB configuration in which semiconductor light emitting elements are arranged side by side on a rectangular substrate that is long in the longitudinal direction.
  • five or more, 10 or more, 15 or more, 20 or more semiconductor light emitting elements may be arranged in the longitudinal direction regularly or at random, and may be appropriately set according to a desired illumination range. it can.
  • a reflective film such as silver on the mounting surface of the semiconductor light emitting device because the light synchrotron radiation coefficient of the semiconductor light emitting device is improved.
  • the semiconductor light emitting device of the present embodiment is preferably used as a semiconductor light emitting device for plant irradiation, may be used in a closed plant factory in which external light is shut out, or in a green house in which sunlight and a semiconductor light emitting device are used in combination. You may use it.
  • the semiconductor light emitting device of the present embodiment is effective for the growth of photosynthetic plants in general, and includes, for example, vegetables, fruits, leaves, lawns, and seedlings. It can also be applied to the cultivation of new seedlings (grain seedlings) to respond to environmental changes such as warming.
  • another embodiment of the present invention designs a spectrum of light emitted from a semiconductor light emitting device for plant growth, which includes at least a blue semiconductor light emitting device and a wavelength conversion layer containing a green phosphor and a red phosphor. It ’s a method, Preferably, the above (iii) to (v) so that the light emitted from the semiconductor light emitting device satisfies ⁇ 0.050 ⁇ Duv ⁇ ⁇ 0.030 and the spectrum thereof satisfies the above (i) and (ii). ) Is a design method including a step of preparing the wavelength conversion layer so as to further satisfy at least one of the above.
  • the wavelength conversion layer can be prepared, for example, by mixing a matrix for dispersing the phosphor and the phosphor.
  • the matrix may be a resin matrix, a glass matrix, or a ceramic matrix.
  • a phosphor containing a green phosphor and a red phosphor is provided so as to satisfy the above (i) and (ii), preferably further satisfying at least one of the above (iii) to (v).
  • the green phosphor is 75% by weight or more and 90% by weight or less
  • the red phosphor is 10% by weight or more and 25% by weight or less with respect to the total amount of phosphors in the wavelength conversion layer.
  • a trader can appropriately adjust the type and content of the phosphor in the wavelength conversion layer based on the characteristics and characteristics of the phosphor used.
  • the semiconductor light emitting device 7 was manufactured by using a blue light emitting diode (peak wavelength 451 nm) and a red phosphor (SCASN, peak wavelength 629 nm, half width 84 nm).
  • a semiconductor light emitting device 8 having a CCT 4000K was prepared with Ra80.
  • the spectra of the emitted light of the semiconductor light emitting devices 1, 2, 7 and 8 are shown in FIG. 1, and the characteristic parameters relating to the spectra of the emitted light are shown in Table 1.
  • Table 2 shows the color rendering index evaluation numbers of the emitted light of each semiconductor light emitting device.
  • the color rendering index R3, R4, R11, R14 which mainly affects the appearance of green parts such as leaves, stems, and young fruits of plants; mainly fruits such as tomato and paprika.
  • the semiconductor light emitting devices 1 to 6 and 8 are the semiconductor light emitting device 7. It was a high color rendering index. From these, it can be said that the semiconductor light emitting devices 1 to 6 and 8 emit light having a spectrum having higher color fidelity required for grasping the degree of plant growth as compared with the semiconductor light emitting device 7.
  • a photograph of a developing cherry tomato irradiated with light emitted from the semiconductor light emitting device 1 and a developing cherry tomato irradiated with light emitted from the semiconductor light emitting device 7 is shown in FIG.
  • ⁇ Growth evaluation I> In a solar-combined plant factory for cultivating leaf lettuce by supplying a culture solution, leaf lettuce was irradiated using a high-pressure sodium lamp (HPS) and semiconductor light emitting devices 1 and 7, and their growth was evaluated.
  • the cultivation environment is room temperature 22 ° C., humidity 50-70%, culture solution pH 5.5-6.0, culture solution conductivity EC1.5-2.0 mS / cm, PPFD (photosynthetic effective photon bundle density) 230 ⁇ mol / It was cultivated for 35 days at sec ⁇ m 2 and light timing ON / OFF 12 hours. The results are shown in FIG. From FIG.
  • the leaf lettuce irradiated with the light emitted from the semiconductor light emitting devices 1 and 7 irradiates the light emitted from the HPS light source widely used for indoor plant cultivation. It showed high growth compared to the leaf lettuce. In the color appearance evaluation, it can be understood that there is no significant difference in plant development between the semiconductor light emitting devices 1 and 7, which have a large difference in color reproducibility.
  • the leaf lettuce was irradiated and the growth was evaluated in the same manner as in the method of the growth evaluation I described above.
  • the leaf lettuce irradiated with the light emitted from the semiconductor light emitting device 2 has a leaf weight of about 27% and a leaf size of about 27% as compared with the leaf lettuce irradiated with the light emitted from the semiconductor light emitting device 8. It showed 33% higher growth. It can be understood that there is a large difference in plant development between the semiconductor light emitting devices 2 and 8 in which the color reproducibility was not significantly different in the color appearance evaluation.
  • the semiconductor light emitting device 8 has a too large output in the green region, so that the conversion efficiency of the red phosphor is reduced and the light output in the red region is small, so that photosynthetic loss occurs, and the dry weight and frond area are reduced. Is considered to have decreased together. Further, although light in a wavelength region longer than 700 nm is usually not considered in the calculation of the photosynthetic photon flux density, the semiconductor light emitting device 2 having more light output in the wavelength region longer than 700 nm is equivalent to the semiconductor light emitting device 7. I got the growth result of.

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Abstract

Provided is a novel semiconductor light-emitting device for plant growth which is capable of both achieving efficient plant growth and presenting a color by which to ascertain a degree of plant growth.　The semiconductor light-emitting device for plant growth at least includes a blue semiconductor light-emitting element, a green phosphor, and a red phosphor, and is configured such that light emitted from the semiconductor light-emitting device satisfies -0.050 ≤ Duv ≤ -0.030 and the spectrum thereof has a predetermined shape.

Description

植物育成用半導体発光装置、並びに照明方法及び設計方法Semiconductor light emitting device for plant growth, lighting method and design method
　本発明は、植物を効率よく育成するための半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device for efficiently growing plants.
　屋内で野菜や花卉などの植物等を育てる植物工場では、効率良く植物を育成するために、白色蛍光灯、ナトリウム電球、ＬＥＤ等を用いて植物等に対して光を照射する。そして、植物の光合成は、植物に含まれる葉緑体により行われ、主に波長域４００ｎｍ～７００ｎｍの光が使用される。 At a plant factory that grows plants such as vegetables and flowers indoors, in order to grow plants efficiently, white fluorescent lamps, sodium bulbs, LEDs, etc. are used to irradiate the plants with light. Then, photosynthesis of plants is carried out by chloroplasts contained in plants, and light having a wavelength range of 400 nm to 700 nm is mainly used.
　上記光合成に使用される波長域の光のうち、特に長波長側の赤色領域でエネルギー変換効率が高いとされており、青色領域と赤色領域の光を適切なものとすることで、光合成に好適な光を発する光源が提案されている（特許文献１参照）。 Of the light in the wavelength range used for photosynthesis, it is said that the energy conversion efficiency is particularly high in the red region on the long wavelength side, and it is suitable for photosynthesis by making the light in the blue region and the red region appropriate. A light source that emits a large amount of light has been proposed (see Patent Document 1).
　一方で、植物の生長を優先するため赤色用発光ダイオードを多く用いる植物育成用の照明装置では、赤色発光ダイオードからの赤色光が植物に照射されるため、人間の目には植物が黒ずんで見えるという問題があった。このような問題に対し、白色用発光ダイオードと赤色用発光ダイオードを有し、赤色用発光ダイオードから発する光の放射エネルギーが、白色用発光ダイオードから発する光の放射エネルギーの１／２以下となるように制御することが提案されている（特許文献２参照）。 On the other hand, in a lighting device for plant growth that uses a lot of red light emitting diodes to give priority to plant growth, the red light from the red light emitting diode irradiates the plant, so that the plant looks dark to the human eye. There was a problem. To solve such a problem, a white light emitting diode and a red light emitting diode are provided, and the radiant energy of the light emitted from the red light emitting diode is reduced to 1/2 or less of the radiant energy of the light emitted from the white light emitting diode. It has been proposed to control the light (see Patent Document 2).
特開２０１６－１２２７２２号公報JP-A-2016-122722 特開２０１１－２００２０４号公報Japanese Unexamined Patent Publication No. 2011-200204
　しかしながら上記特許文献２の技術では、白色用発光ダイオードの光の放射エネルギーが大きいため、光合成に寄与しない領域の光が多く含まれ、植物の効率的な育成には改善の余地があった。また、赤色ＬＥＤは白色ＬＥＤと比較して劣化が早いため、長時間の使用により、照明装置から照射される光から、光合成に寄与する赤色光を失ってしまうことがあった。
　本発明は、植物を効率的に育成できることと、植物の成長度合いを把握するための色の見えと、を両立できる新たな植物育成用半導体発光装置を提供するものである。 However, in the technique of Patent Document 2, since the radiant energy of the light of the white light emitting diode is large, a large amount of light in a region that does not contribute to photosynthesis is contained, and there is room for improvement in the efficient growth of plants. Further, since the red LED deteriorates faster than the white LED, the red light that contributes to photosynthesis may be lost from the light emitted from the lighting device after being used for a long time.
The present invention provides a new semiconductor light emitting device for plant growth that can efficiently grow plants and the appearance of colors for grasping the degree of growth of plants.
　本発明者らは、上記課題を解決すべく研究を重ね、半導体発光装置から出射する光のスペクトルにおいて、緑色領域にある程度発光強度を持たせ、且つその発光強度変化をなだらかにすることで、上記課題を解決できることを見出し、本発明を完成させた。 The present inventors have conducted research in order to solve the above problems, and in the spectrum of light emitted from the semiconductor light emitting device, the green region is provided with a certain amount of light emission intensity, and the change in the light emission intensity is made gentle. We have found that the problem can be solved and completed the present invention.
　本発明の一形態は、少なくとも、青色半導体発光素子と、緑色蛍光体と、赤色蛍光体と、を含む植物育成用半導体発光装置であって、
　前記半導体発光装置から出射する光は、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）を満たす、植物育成用半導体発光装置、である。
（ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす One embodiment of the present invention is a semiconductor light emitting device for growing a plant, which comprises at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
The light emitted from the semiconductor light emitting device is a semiconductor light emitting device for plant growth, which satisfies −0.050 ≦ Duv ≦ −0.030 and its spectrum satisfies the following (i).
(I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. Satisfy 3 or less
　また、本発明の別形態は、少なくとも、青色半導体発光素子と、緑色蛍光体と、赤色蛍光体と、を含む植物育成用半導体発光装置であって、
　前記半導体発光装置から出射する光のスペクトルが以下の（ｉｉ）を満たす、植物育成用半導体発光装置、である。
（ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす Further, another embodiment of the present invention is a semiconductor light emitting device for growing a plant, which includes at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
A semiconductor light emitting device for plant growth, wherein the spectrum of light emitted from the semiconductor light emitting device satisfies the following (ii).
(Ii) the vertical axis (Y), the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), horizontal axis (X) in the graph the wavelength (nm), and the I BG, wavelength 555nm The slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 in the above satisfies 0 <a≤0.004.
　また、前記半導体発光装置から出射する光のスペクトルは、更に、以下の（ｉｉｉ）及び／又は（ｉｖ）を満たすことが好ましい。更に以下の（ｖ）を満たすことが好ましい。
（ｉｉｉ）波長４００ｎｍ以上５００ｎｍ以下の領域に発光極大値ＩＢを有し、０．８≦ＩＢ／ＩＲ≦１．３を満たす
（ｉｖ）波長６５０ｎｍ以上の領域に発光極大値ＩＲを有する
（ｖ）発光極小値ＩＢＧの波長λＩＢＧｎｍから波長５５５ｎｍの範囲において、波長５５５ｎｍにおける発光強度Ｉ５５５が発光強度の最大値である Further, it is preferable that the spectrum of the light emitted from the semiconductor light emitting device further satisfies the following (iii) and / or (iv). Further, it is preferable to satisfy the following (v).
Has an emission maximum value I B in (iii) Wavelength 400nm or 500nm following areas, a 0.8 ≦ I B / I R ≦ 1.3 satisfy (iv) emission maximum in the wavelength 650nm or more domain values I R in a (v) the range of wavelengths 555nm wavelength λI BG nm emitting minima I BG, the emission intensity I 555 at a wavelength of 555nm is the maximum value of the luminous intensity
　また、前記赤色蛍光体は、窒化物蛍光体を含むことが好ましく、半値幅が７５ｎｍ以上である赤色蛍光体を含むことが好ましい。更に、前記緑色蛍光体は、ピーク波長が５１０ｎｍ以上５４０ｎｍ以下であり、且つ半値幅が１００ｎｍ以上１２０ｎｍ以下である緑色蛍光体を含むことが好ましい。 Further, the red phosphor preferably contains a nitride phosphor, and preferably contains a red phosphor having a half width of 75 nm or more. Further, the green phosphor preferably contains a green phosphor having a peak wavelength of 510 nm or more and 540 nm or less and a half width of 100 nm or more and 120 nm or less.
　また、本発明の別の形態は、少なくとも青色半導体発光素子と蛍光体と含む半導体発光装置から出射する光により植物を照射する照明工程、を含む照明方法であって、
　前記照明工程において、前記半導体発光装置から出射する光が植物を照明した際に、前記植物の位置で測定した光が－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）及び（ｉｉ）を満たす、照明方法。
（ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす
（ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす Another embodiment of the present invention is a lighting method including at least a lighting step of irradiating a plant with light emitted from a semiconductor light emitting device including a blue semiconductor light emitting device and a phosphor.
In the lighting step, when the light emitted from the semiconductor light emitting device illuminates the plant, the light measured at the position of the plant satisfies −0.050 ≦ Duv ≦ −0.030, and the spectrum thereof is as follows. A lighting method that satisfies (i) and (ii).
(I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. In a graph in which the vertical axis (Y) satisfying 3 or less is the relative emission intensity (%) with the emission peak intensity of the spectrum as 100%, and the horizontal axis (X) is the wavelength (nm), the IBG And the slope a of the straight line connecting the emission intensity I 555 at the wavelength of 555 nm satisfies 0 <a≤0.004.
　また、前記半導体発光装置と植物との距離が１０ｃｍ～６０ｃｍであって、前記半導体発光装置がＳＭＤ構成であることが好ましく、前記半導体発光装置と植物との距離が６０ｃｍ～２ｍであって、前記半導体発光装置がＣＯＢ構成であることが好ましい。 Further, it is preferable that the distance between the semiconductor light emitting device and the plant is 10 cm to 60 cm and the semiconductor light emitting device has an SMD configuration, and the distance between the semiconductor light emitting device and the plant is 60 cm to 2 m. It is preferable that the semiconductor light emitting device has a COB configuration.
　更に、本発明の別の形態は、少なくとも、青色半導体発光素子と、緑色蛍光体及び赤色蛍光体を含む波長変換層と、を備えた植物育成用半導体発光装置から出射する光のスペクトルを設計する方法であって、
　前記半導体発光装置から出射する光が、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）及び（ｉｉ）を満たすように、前記波長変換層を調製するステップ、を含む、設計方法である。
（ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす
（ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす Further, another embodiment of the present invention designs a spectrum of light emitted from a plant growing semiconductor light emitting device including at least a blue semiconductor light emitting device and a wavelength conversion layer containing a green phosphor and a red phosphor. It ’s a method,
The step of preparing the wavelength conversion layer so that the light emitted from the semiconductor light emitting device satisfies −0.050 ≦ Duv ≦ −0.030 and the spectrum satisfies the following (i) and (ii). , Including, is a design method.
(I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. In a graph in which the vertical axis (Y) satisfying 3 or less is the relative emission intensity (%) with the emission peak intensity of the spectrum as 100%, and the horizontal axis (X) is the wavelength (nm), the IBG And the slope a of the straight line connecting the emission intensity I 555 at the wavelength of 555 nm satisfies 0 <a≤0.004.
　本発明により、植物を効率的に育成できることと、植物の成長度合いを把握するための色の見えと、を両立できる新たな植物育成用半導体発光装置を提供できる。
　また、赤色半導体発光素子を使用せず、赤色蛍光体を使用することから、長時間使用しても、スペクトルバランスを維持することができる。また、１種類の半導体発光素子のみを使用するため、駆動回路をシンプルにできる。 INDUSTRIAL APPLICABILITY According to the present invention, it is possible to provide a new semiconductor light emitting device for plant growth that can achieve both efficient growth of plants and color appearance for grasping the degree of growth of plants.
Further, since the red phosphor is used instead of the red semiconductor light emitting element, the spectrum balance can be maintained even if it is used for a long time. Moreover, since only one type of semiconductor light emitting element is used, the drive circuit can be simplified.
半導体発光装置１の出射光のスペクトルを示すグラフである。It is a graph which shows the spectrum of the emitted light of the semiconductor light emitting device 1. 半導体発光装置２の出射光のスペクトルを示すグラフである。It is a graph which shows the spectrum of the emitted light of the semiconductor light emitting device 2. 半導体発光装置７の出射光のスペクトルを示すグラフである。It is a graph which shows the spectrum of the emitted light of the semiconductor light emitting device 7. 半導体発光装置８の出射光のスペクトルを示すグラフである。It is a graph which shows the spectrum of the emitted light of the semiconductor light emitting device 8. （ａ）半導体発光装置１から出射する光で照射した発育途中のミニトマトと、（ｂ）半導体発光装置７から出射する光で照射した発育途中のミニトマトの写真である（図面代用写真）。It is a photograph of (a) a developing cherry tomato irradiated with light emitted from a semiconductor light emitting device 1 and (b) a developing cherry tomato irradiated with light emitted from a semiconductor light emitting device 7 (drawing substitute photograph). 高圧ナトリウムランプ（ＨＰＳ）、半導体発光装置１及び７を用いてリーフレタスを照射し、その発育を評価した結果を示すグラフである。図中（ａ）は葉の重量の推移を示し、図中（ｂ）は葉の大きさを示す。It is a graph which shows the result of having irradiated leaf lettuce using a high pressure sodium lamp (HPS), a semiconductor light emitting device 1 and 7, and evaluated the growth. (A) in the figure shows the transition of the weight of the leaf, and (b) in the figure shows the size of the leaf.
　以下、本発明をより詳細に説明する。
　本発明の一形態は、少なくとも、青色半導体発光素子と、緑色蛍光体と、赤色蛍光体と、を含む植物育成用半導体発光装置であって、
　前記半導体発光装置から出射する光は、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）を満たす、植物育成用半導体発光装置、である。
（ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす
　また、本発明の別形態は、少なくとも、青色半導体発光素子と、緑色蛍光体と、赤色蛍光体と、を含む植物育成用半導体発光装置であって、
　前記半導体発光装置から出射する光のスペクトルが以下の（ｉｉ）を満たす、植物育成用半導体発光装置、である。
（ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす Hereinafter, the present invention will be described in more detail.
One embodiment of the present invention is a semiconductor light emitting device for growing a plant, which comprises at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
The light emitted from the semiconductor light emitting device is a semiconductor light emitting device for plant growth, which satisfies −0.050 ≦ Duv ≦ −0.030 and its spectrum satisfies the following (i).
(I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. 3 or less is satisfied. Another embodiment of the present invention is a semiconductor light emitting device for growing a plant, which includes at least a blue semiconductor light emitting element, a green phosphor, and a red phosphor.
A semiconductor light emitting device for plant growth, wherein the spectrum of light emitted from the semiconductor light emitting device satisfies the following (ii).
(Ii) the vertical axis (Y), the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), horizontal axis (X) in the graph the wavelength (nm), and the I BG, wavelength 555nm The slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 in the above satisfies 0 <a ≦ 0.004.
　青色半導体発光素子は、通常発光ピーク波長域が４３０ｎｍ以上４９０ｎｍ以下である半導体発光素子である。青色半導体発光素子は、発光ピーク波長の下限が４３５ｎｍであってよく、４４０ｎｍであってよい。発光ピーク波長の上限は４８０ｎｍ以下であってよく、４７５ｎｍ以下であってよく、４７０ｎｍ以下であってよい。半導体発光装置は青色半導体発光素子を１つだけ有してもよく、複数有してもよい。複数有する場合、青色半導体発光素子が線状に配列されていてもよく、面状に配列されていてもよく、配列は規則性を有していても、アトランダムであってもよい。 The blue semiconductor light emitting device is a semiconductor light emitting device having a normal emission peak wavelength range of 430 nm or more and 490 nm or less. The lower limit of the emission peak wavelength of the blue semiconductor light emitting device may be 435 nm and may be 440 nm. The upper limit of the emission peak wavelength may be 480 nm or less, 475 nm or less, or 470 nm or less. The semiconductor light emitting device may have only one blue semiconductor light emitting element, or may have a plurality of blue semiconductor light emitting elements. When there are a plurality of blue semiconductor light emitting elements, the blue semiconductor light emitting elements may be arranged linearly or planarly, and the arrangement may have regularity or may be at random.
　緑色蛍光体は、通常発光ピーク波長域が４９０ｎｍ以上５７０ｎｍ以下である蛍光体である。発光ピーク波長は４９５ｎｍ以上であってよく、５００ｎｍ以上であってよく、５１０ｎｍ以上であってよい。また５６０ｎｍ以下であってよく、５５０ｎｍ以下であってよく、５４０ｎｍ以下であってよい。
　緑色蛍光体の半値幅は特段限定されないが、半値幅が６０ｎｍ以上であってよく、７０ｎｍ以上であってよく、８０ｎｍ以上であってよく、９０ｎｍ以上であってよく、１００ｎｍ以上であってよい。また１３０ｎｍ以下であってよく、１２０ｎｍ以下であってよく、１１５ｎｍ以下であってよく、１１０ｎｍ以下であってよい。 The green phosphor is a phosphor having a normal emission peak wavelength range of 490 nm or more and 570 nm or less. The emission peak wavelength may be 495 nm or more, 500 nm or more, and 510 nm or more. Further, it may be 560 nm or less, 550 nm or less, and 540 nm or less.
The half-value width of the green phosphor is not particularly limited, but the half-value width may be 60 nm or more, 70 nm or more, 80 nm or more, 90 nm or more, or 100 nm or more. Further, it may be 130 nm or less, 120 nm or less, 115 nm or less, and 110 nm or less.
　赤色蛍光体は、通常発光ピーク波長域が５９０ｎｍ以上７００ｎｍ以下である蛍光体である。発光ピーク波長は６００ｎｍ以上であってよく、６１０ｎｍ以上であってよい。また６８０ｎｍ以下であってよく、６６０ｎｍ以下であってよい。
　赤色蛍光体の半値幅は特段限定されないが、半値幅が１ｎｍ以上であってよく、２ｎｍ以上であってよく、また１５ｎｍ以下であってよく、１０ｎｍ以下であってよい。別の例では、半値幅が７０ｎｍ以上であってよく、７５ｎｍ以上であってよく、８０ｎｍ以上であってよく、９０ｎｍ以上であってよく、また１２０ｎｍ以下であってよく、１１５ｎｍ以下であってよく、１１０ｎｍ以下であってよく、１００ｎｍ以下であってよい。 The red phosphor is a phosphor having a normal emission peak wavelength range of 590 nm or more and 700 nm or less. The emission peak wavelength may be 600 nm or more, and may be 610 nm or more. Further, it may be 680 nm or less, and may be 660 nm or less.
The half-value width of the red phosphor is not particularly limited, but the half-value width may be 1 nm or more, 2 nm or more, 15 nm or less, and 10 nm or less. In another example, the full width at half maximum may be 70 nm or more, 75 nm or more, 80 nm or more, 90 nm or more, 120 nm or less, 115 nm or less. , 110 nm or less, and may be 100 nm or less.
　緑色蛍光体の具体例としては、Ｃｅ３＋を付活剤としたアルミン酸塩、Ｃｅ３＋を付活剤としたイットリウムアルミニウム酸化物、Ｅｕ２＋付活アルカリ土類ケイ酸塩結晶、Ｅｕ２＋付活アルカリ土類ケイ酸窒化物を母体とする緑色蛍光体がある。これらの緑色蛍光体は、通常、青色半導体発光素子を用いて励起可能である。 Specific examples of the green phosphor, aluminate was Ce 3+ and activator, yttrium aluminum oxide and activator of Ce 3+, Eu 2+ activated alkaline-earth silicate crystals, Eu 2+ -activated There are green phosphors based on alkaline earth silicate nitride. These green phosphors can usually be excited using a blue semiconductor light emitting device.
　Ｃｅ３＋付活アルミン酸塩蛍光体の具体例には、下記一般式（２）で表される緑色蛍光体が挙げられる。
　Ｙａ（Ｃｅ，Ｔｂ，Ｌｕ）ｂ（Ｇａ，Ｓｃ）ｃＡｌｄＯｅ    （２）
　（一般式（２）において、ａ、ｂ、ｃ、ｄ、ｅが、ａ＋ｂ＝３、０≦ｂ≦０．２、４．５≦ｃ＋ｄ≦５．５、０．１≦ｃ≦２．６、および１０．８≦ｅ≦１３．４を満たす。）
　なお、一般式（２）で表されるＣｅ３＋付活アルミン酸塩蛍光体をＧ－ＹＡＧ蛍光体と呼ぶ。 Specific examples of the Ce 3+ activated aluminate phosphor include a green phosphor represented by the following general formula (2).
Y a (Ce, Tb, Lu ) b (Ga, Sc) c Al d O e (2)
(In the general formula (2), a, b, c, d, e are a + b = 3, 0 ≦ b ≦ 0.2, 4.5 ≦ c + d ≦ 5.5, 0.1 ≦ c ≦ 2.6. , And 10.8 ≦ e ≦ 13.4.)
The Ce 3+ activated aluminate phosphor represented by the general formula (2) is called a G-YAG phosphor.
　Ｃｅ３＋付活イットリウムアルミニウム酸化物系蛍光体の具体例には、下記一般式（３）で表される緑色蛍光体が挙げられる。
　Ｌｕａ（Ｃｅ，Ｔｂ，Ｙ）ｂ（Ｇａ，Ｓｃ）ｃＡｌｄＯｅ    （３）
　（一般式（３）において、ａ、ｂ、ｃ、ｄ、ｅが、ａ＋ｂ＝３、０≦ｂ≦０．２、４．５≦ｃ＋ｄ≦５．５、０≦ｃ≦２．６、および１０．８≦ｅ≦１３．４を満たす。）
　なお、一般式（３）で表されるＣｅ３＋付活イットリウムアルミニウム酸化物系蛍光体をＬｕＡＧ蛍光体と呼ぶ。 Specific examples of the Ce 3+ activated yttrium aluminum oxide-based phosphor include a green phosphor represented by the following general formula (3).
Lu a (Ce, Tb, Y) b (Ga, Sc) c Al d Oe (3)
(In the general formula (3), a, b, c, d, e are a + b = 3, 0 ≦ b ≦ 0.2, 4.5 ≦ c + d ≦ 5.5, 0 ≦ c ≦ 2.6, and 10.8 ≦ e ≦ 13.4 is satisfied.)
The Ce 3+ activated yttrium aluminum oxide-based phosphor represented by the general formula (3) is called a LuAG phosphor.
　その他、下記一般式（４）および下記一般式（５）で表される緑色蛍光体が挙げられる。
　Ｍ１ ａＭ２ ｂＭ３ ｃＯｄ    （４）
　（一般式（４）において、Ｍ１は２価の金属元素、Ｍ２は３価の金属元素、Ｍ３は４価の金属元素をそれぞれ示し、ａ、ｂ、ｃおよびｄが、２．７≦ａ≦３．３、１．８≦ｂ≦２．２、２．７≦ｃ≦３．３、１１．０≦ｄ≦１３．０を満たす。）
　なお、一般式（４）で表される蛍光体をＣＳＭＳ蛍光体と呼ぶ。 In addition, green phosphors represented by the following general formula (4) and the following general formula (5) can be mentioned.
M 1 a M 2 b M 3 c Od (4)
(In the general formula (4), M 1 represents a divalent metal element, M 2 represents a trivalent metal element, M 3 represents a tetravalent metal element, and a, b, c and d are 2.7. ≤a≤3.3, 1.8≤b≤2.2, 2.7≤c≤3.3, 11.0≤d≤13.0.)
The phosphor represented by the general formula (4) is called a CSMS phosphor.
　なお、上記式（４）において、Ｍ１は２価の金属元素であるが、Ｍｇ、Ｃａ、Ｚｎ、Ｓｒ、Ｃｄ、及びＢａからなる群から選択された少なくとも１種であるのが好ましく、Ｍｇ、Ｃａ、又はＺｎであるのが更に好ましく、Ｃａが特に好ましい。この場合、Ｃａは単独系でもよく、Ｍｇとの複合系でもよい。また、Ｍ１は他の２価の金属元素を含んでいてもよい。
　Ｍ２は３価の金属元素であるが、Ａｌ、Ｓｃ、Ｇａ、Ｙ、Ｉｎ、Ｌａ、Ｇｄ、及びＬｕからなる群から選択された少なくとも１種であるのが好ましく、Ａｌ、Ｓｃ、Ｙ、又はＬｕであるのが更に好ましく、Ｓｃが特に好ましい。この場合、Ｓｃは単独系でもよく、ＹまたはＬｕとの複合系でもよい。また、Ｍ２はＣｅを含むことを必須とし、Ｍ２は他の３価の金属元素を含んでいてもよい。
　Ｍ３は４価の金属元素であるが、少なくともＳｉを含むことが好ましい。Ｓｉ以外の４価の金属元素Ｍ３の具体例としては、Ｔｉ、Ｇｅ、Ｚｒ、Ｓｎ、及びＨｆからなる群から選択された少なくとも１種であるのが好ましく、Ｔｉ、Ｚｒ、Ｓｎ、及びＨｆからなる群から選択された少なくとも１種であるのがより好ましく、Ｓｎであることが特に好ましい。特に、Ｍ３がＳｉであることが好ましい。また、Ｍ３は他の４価の金属元素を含んでいてもよい。 In the above formula (4), M 1 is a divalent metal element, but it is preferably at least one selected from the group consisting of Mg, Ca, Zn, Sr, Cd, and Ba, and Mg is preferable. , Ca, or Zn, and Ca is particularly preferable. In this case, Ca may be a single system or a composite system with Mg. Further, M 1 may contain other divalent metal elements.
Although M 2 is a trivalent metal element, it is preferably at least one selected from the group consisting of Al, Sc, Ga, Y, In, La, Gd, and Lu, and is preferably Al, Sc, Y, Or Lu is more preferable, and Sc is particularly preferable. In this case, Sc may be a single system or a complex system with Y or Lu. Further, M 2 is an essential to include Ce, M 2 may contain other trivalent metal elements.
M 3 is a tetravalent metal element, but preferably contains at least Si. As a specific example of the tetravalent metal element M 3 other than Si, it is preferable that it is at least one selected from the group consisting of Ti, Ge, Zr, Sn, and Hf, and Ti, Zr, Sn, and Hf. It is more preferable that it is at least one selected from the group consisting of, and it is particularly preferable that it is Sn. In particular, it is preferable that M 3 is Si. Further, M 3 may contain other tetravalent metal elements.
　Ｍ２に含まれるＣｅのＭ２全体に占める割合の下限は０．０１以上であることが好ましく、０．０２以上であることがより好ましい。また、Ｍ２に含まれるＣｅのＭ２全体に占める割合の上限は、０．１０以下であることが好ましく、０．０６以下であることがより好ましい。更に、Ｍ１元素に含まれるＭｇのＭ１全体に占める割合の下限は０．０１以上であることが好ましく、０．０３以上であることがより好ましい。一方、上限は０．３０以下であることが好ましく、０．１０以下であることがより好ましい。 Preferably the lower limit of the percentage of total M 2 of Ce contained in M 2 is 0.01 or more, more preferably 0.02 or more. The upper limit of the percentage of total M 2 of Ce contained in M 2 is preferably 0.10 or less, more preferably 0.06 or less. Further, the lower limit of the ratio of Mg contained in the M 1 element to the entire M 1 is preferably 0.01 or more, and more preferably 0.03 or more. On the other hand, the upper limit is preferably 0.30 or less, and more preferably 0.10 or less.
　Ｍ１ ａＭ２ ｂＭ３ ｃＯｄ    （５）
　（一般式（５）において、Ｍ１は少なくともＣｅを含む付活剤元素、Ｍ２は２価の金属元素、Ｍ３は３価の金属元素をそれぞれ示し、ａ、ｂ、ｃおよびｄが、０．０００１≦ａ≦０．２、０．８≦ｂ≦１．２、１．６≦ｃ≦２．４、および３．２≦ｄ≦４．８を満たす。）
　なお、一般式（５）で表される蛍光体をＣＳＯ蛍光体と呼ぶ。 M 1 a M 2 b M 3 c Od (5)
(In the general formula (5), M 1 represents an activator element containing at least Ce, M 2 represents a divalent metal element, M 3 represents a trivalent metal element, and a, b, c and d are 0.0001 ≦ a ≦ 0.2, 0.8 ≦ b ≦ 1.2, 1.6 ≦ c ≦ 2.4, and 3.2 ≦ d ≦ 4.8 are satisfied.)
The phosphor represented by the general formula (5) is called a CSO phosphor.
　なお、上記式（５）において、Ｍ１は、結晶母体中に含有される付活剤元素であり、少なくともＣｅを含む。また、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、及びＹｂからなる群から選択された少なくとも１種の２～４価の元素を含有させることができる。
　Ｍ２は２価の金属元素であるが、Ｍｇ、Ｃａ、Ｚｎ、Ｓｒ、Ｃｄ、及びＢａからなる群から選択された少なくとも１種であるのが好ましく、Ｍｇ、Ｃａ、又は、Ｓｒであるのが更に好ましく、Ｍ２の元素の５０モル％以上がＣａであることが特に好ましい。
　Ｍ３は３価の金属元素であるが、Ａｌ、Ｓｃ、Ｇａ、Ｙ、Ｉｎ、Ｌａ、Ｇｄ、Ｙｂ、及びＬｕからなる群から選択された少なくとも１種であるのが好ましく、Ａｌ、Ｓｃ、Ｙｂ、又はＬｕであるのが更に好ましく、Ｓｃ、又はＳｃとＡｌ、又はＳｃとＬｕであるのがより一層好ましく、Ｍ３の元素の５０モル％以上がＳｃであることが特に好ましい。
　Ｍ２及びＭ３は、それぞれ２価及び３価の金属元素を表すが、Ｍ２及び／又はＭ３のごく一部を１価、４価、５価のいずれかの価数の金属元素としてもよく、さらに、微量の陰イオン、たとえば、ハロゲン元素（Ｆ、Ｃｌ、Ｂｒ、Ｉ）、窒素、硫黄、セレンなどが、化合物の中に含まれていてもよい。 In the above formula (5), M 1 is an activator element contained in the crystal matrix and contains at least Ce. Further, at least one 2 to 4 selected from the group consisting of Cr, Mn, Fe, Co, Ni, Cu, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb. It can contain valent elements.
Although M 2 is a divalent metal element, it is preferably at least one selected from the group consisting of Mg, Ca, Zn, Sr, Cd, and Ba, and is preferably Mg, Ca, or Sr. Is more preferable, and it is particularly preferable that 50 mol% or more of the element of M 2 is Ca.
Although M 3 is a trivalent metal element, it is preferably at least one selected from the group consisting of Al, Sc, Ga, Y, In, La, Gd, Yb, and Lu, preferably Al, Sc, Yb, or more preferably in the range of Lu, Sc, or Sc and Al, or more preferably more that is Sc and Lu, and particularly preferably 50 mol% or more of the elements of M 3 is Sc.
M 2 and M 3 represent divalent and trivalent metal elements, respectively, but a small part of M 2 and / or M 3 is used as a metal element having a valence of either monovalent, tetravalent, or pentavalent. In addition, trace amounts of anions such as halogen elements (F, Cl, Br, I), nitrogen, sulfur, selenium and the like may be contained in the compound.
　さらに、Ｅｕ２＋付活アルカリ土類ケイ酸塩結晶を母体とする蛍光体の具体例には、下記一般式（６）で表される緑色蛍光体が挙げられる。
　（ＢａａＣａｂＳｒｃＭｇｄＥｕｘ）ＳｉＯ４    （６）
　（一般式（６）においてａ、ｂ、ｃ、ｄおよびｘが、ａ＋ｂ＋ｃ＋ｄ＋ｘ＝２、１．０≦ａ≦２．０、０≦ｂ＜０．２、０．２≦ｃ≦１，０、０≦ｄ＜０．２および０＜ｘ≦０．５を満たす。）
　なお、一般式（６）で表されるアルカリ土類ケイ酸塩蛍光体をＢＳＳ蛍光体と呼ぶ。 Further, a specific example of a phosphor based on Eu 2+ activated alkaline earth silicate crystals is a green phosphor represented by the following general formula (6).
(Ba a Ca b Sr c Mg d Eu x ) SiO 4 (6)
(In the general formula (6), a, b, c, d and x are a + b + c + d + x = 2, 1.0 ≦ a ≦ 2.0, 0 ≦ b <0.2, 0.2 ≦ c ≦ 1,0, 0 ≦ d <0.2 and 0 <x ≦ 0.5 are satisfied.)
The alkaline earth silicate phosphor represented by the general formula (6) is called a BSS phosphor.
　さらに、Ｅｕ２＋付活アルカリ土類ケイ酸窒化物を母体とする蛍光体の具体例には、下記一般式（７）で表される緑色蛍光体が挙げられる。
　（Ｂａ，Ｃａ，Ｓｒ，Ｍｇ，Ｚｎ，Ｅｕ）３Ｓｉ６Ｏ１２Ｎ２    （７）
　なお、一般式（７）で表される蛍光体をＢＳＯＮ蛍光体と呼ぶ。
　一般式（７）において選択できる２価金属元素（Ｂａ，Ｃａ，Ｓｒ，Ｍｇ，Ｚｎ，Ｅｕ）のうち、ＢａとＳｒとＥｕの組合せとすることが好ましく、さらには、Ｂａに対するＳｒの比率は１０～３０％とすることがより好ましい。 Further, a specific example of a phosphor based on Eu 2+ activated alkaline earth silicate nitride is a green phosphor represented by the following general formula (7).
(Ba, Ca, Sr, Mg, Zn, Eu) 3 Si 6 O 12 N 2 (7)
The phosphor represented by the general formula (7) is called a BSON phosphor.
Of the divalent metal elements (Ba, Ca, Sr, Mg, Zn, Eu) that can be selected in the general formula (7), it is preferable to use a combination of Ba, Sr, and Eu, and further, the ratio of Sr to Ba is More preferably, it is 10 to 30%.
　また、その他、（Ｙ１－ｕＧｄｕ）３（Ａｌ１－ｖＧａｖ）５Ｏ１２：Ｃｅ，Ｅｕ（但し、ｕ及びｖはそれぞれ０≦ｕ≦０．３、及び０≦ｖ≦０．５を満たす。）で表されるイットリウム・アルミニウム・ガーネット系蛍光体（これをＹＡＧ蛍光体と呼ぶ。）や、Ｃａ１．５ｘＬａ３－ＸＳｉ６Ｎ１１：Ｃｅ（但し、ｘは、０≦ｘ≦１）で表されるランタン窒化ケイ素蛍光体（これをＬＳＮ蛍光体と呼ぶ。）などの黄色蛍光体を含んでもよい。また、Ｅｕ２＋付活サイアロン結晶を母体とするＳｉ６－ｚＡｌｚＯｚＮ８－ｚ：Ｅｕ（ただし０＜ｚ＜４．２）で表される狭帯域緑色蛍光体（これをβ－ＳｉＡｌＯＮ蛍光体と呼ぶ）やＣａ８ＭｇＳｉ４Ｏ１６Ｃｌ２：Ｅｕ（これをクロロシリケート蛍光体と呼ぶ。なお、クロロシリケート蛍光体と結晶構造が同一で、元素の一部が置換された蛍光体も、クロロシリケート蛍光体に含まれる）を含んでもよい。更に、Ｓｒ３Ｓｉ１３Ａｌ３Ｏ２Ｎ２１：Ｅｕ２+蛍光体や、（Ｃａ，Ｓｒ）Ｇａ２Ｓ４：Ｅｕ２＋蛍光体を含んでもよい。 In addition, (Y 1-u Gd u ) 3 (Al 1-v Ga v ) 5 O 12 : Ce, Eu (however, u and v are 0 ≦ u ≦ 0.3 and 0 ≦ v ≦ 0, respectively. Yttrium aluminum garnet-based phosphor (this is called a YAG phosphor) represented by (.5) and Ca 1.5x La 3-X Si 6 N 11 : Ce (where x is It may contain a yellow phosphor such as a lanthanum silicon nitride phosphor represented by 0 ≦ x ≦ 1) (this is referred to as an LSN phosphor). Further, a narrow-band green phosphor represented by Si 6-z Al z O z N 8-z : Eu (where 0 <z <4.2) based on Eu 2+ activated sialone crystal (this is β-). SiAlON phosphor) and Ca 8 MgSi 4 O 16 Cl 2 : Eu (this is called a chlorosilicate fluorescent substance. A fluorescent substance having the same crystal structure as the chlorosilicate phosphor and having some of the elements substituted. Also included in the chlorosilicate phosphor). Further, Sr 3 Si 13 Al 3 O 2 N 21 : Eu 2+ phosphor and (Ca, Sr) Ga 2 S 4 : Eu 2+ phosphor may be contained.
　緑色蛍光体は、１種類の緑色蛍光体のみを用いてよく、２種以上を組み合わせて用いてもよい。 As the green phosphor, only one kind of green phosphor may be used, or two or more kinds may be used in combination.
　赤色蛍光体の具体例としては、Ｅｕ２＋を付活剤とし、アルカリ土類ケイ窒化物、αサイアロンまたはアルカリ土類ケイ酸塩からなる結晶を母体とする蛍光体が挙げられる。この種の赤色蛍光体は、通常、青色半導体発光素子を用いて励起可能である。 Specific examples of the red phosphor include a fluorescent substance using Eu 2+ as an activator and having a crystal composed of an alkaline earth silicate, α-sialon or an alkaline earth silicate as a base. This type of red phosphor can usually be excited using a blue semiconductor light emitting device.
　アルカリ土類ケイ窒化物結晶を母体とするものの具体例には、ＣａＡｌＳｉＮ３：Ｅｕで表される蛍光体（これをＣＡＳＮ蛍光体と呼ぶ）、（Ｃａ，Ｓｒ，Ｂａ，Ｍｇ）ＡｌＳｉＮ３：Ｅｕおよび／または（Ｃａ，Ｓｒ，Ｂａ）ＡｌＳｉＮ３：Ｅｕで表される蛍光体（これをＳＣＡＳＮ蛍光体と呼ぶ）、（ＣａＡｌＳｉＮ３）１－ｘ（Ｓｉ２Ｎ２Ｏ）ｘ：Ｅｕ（ただし、ｘは０＜ｘ＜０．５）で表される蛍光体（これをＣＡＳＯＮ蛍光体と呼ぶ）、（Ｓｒ，Ｃａ，Ｂａ）２ＡｌｘＳｉ５－ｘＯｘＮ８－ｘ：Ｅｕ（ただし０≦ｘ≦２）で表される蛍光体、Ｅｕｙ（Ｓｒ，Ｃａ，Ｂａ）１－ｙ：Ａｌ１＋ｘＳｉ４－ｘＯｘＮ７－ｘ（ただし０≦ｘ＜４、０≦ｙ＜０．２）で表される蛍光体が挙げられる。 Specific examples of those based on alkaline earth silica nitride crystals include a phosphor represented by CaAlSiN 3 : Eu (this is called a CASN phosphor), (Ca, Sr, Ba, Mg) AlSiN 3 : Eu. And / or (Ca, Sr, Ba) AlSiN 3 : Fluorescent material represented by Eu (this is called a SCASN fluorescent material), (CaAlSiN 3 ) 1-x (Si 2 N 2 O) x : Eu (however, however x is a phosphor represented by 0 <x <0.5 (this is called a CASON phosphor), (Sr, Ca, Ba) 2 Al x Si 5-x O x N 8-x : Eu (however) phosphor represented by 0 ≦ x ≦ 2), Eu y (Sr, Ca, Ba) 1-y: Al 1 + x Si 4-x O x N 7-x ( except 0 ≦ x <4,0 ≦ y < Examples thereof include a fluorescent substance represented by 0.2).
　その他、Ｍｎ４＋付活フッ化物錯体蛍光体も挙げられる。Ｍｎ４＋付活フッ化物錯体蛍光体は、Ｍｎ４＋を付活剤とし、アルカリ金属、アミンまたはアルカリ土類金属のフッ化物錯体塩を母体結晶とする蛍光体である。母体結晶を形成するフッ化物錯体には、配位中心が３価金属（Ｂ、Ａｌ、Ｇａ、Ｉｎ、Ｙ、Ｓｃ、ランタノイド）のもの、４価金属（Ｓｉ、Ｇｅ、Ｓｎ、Ｔｉ、Ｚｒ、Ｒｅ、Ｈｆ）のもの、５価金属（Ｖ、Ｐ、Ｎｂ、Ｔａ）のものがあり、その周りに配位するフッ素原子の数は５～７である。 In addition, Mn 4+ activated fluoride complex phosphors can also be mentioned. The Mn 4+ activated fluoride complex phosphor is a phosphor having Mn 4+ as an activator and a fluoride complex salt of an alkali metal, an amine or an alkaline earth metal as a parent crystal. The fluoride complex forming the parent crystal has a coordination center of a trivalent metal (B, Al, Ga, In, Y, Sc, lanthanoid) and a tetravalent metal (Si, Ge, Sn, Ti, Zr, Re, Hf) and pentavalent metals (V, P, Nb, Ta) are available, and the number of fluorine atoms coordinated around them is 5 to 7.
　具体的には、Ｍｎ４＋付活フッ化物錯体蛍光体は、アルカリ金属のヘキサフルオロ錯体塩を母体結晶とするＡ２＋ｘＭｙＭｎｚＦｎ（ＡはＮａおよび／またはＫ；ＭはＳｉおよびＡｌ；－１≦ｘ≦１かつ０．９≦ｙ＋ｚ≦１．１かつ０．００１≦ｚ≦０．４かつ５≦ｎ≦７）などが挙げられる。この中でも、ＡがＫ（カリウム）またはＮａ（ナトリウム）から選ばれる１種以上で、ＭがＳｉ（ケイ素）またはＴｉ（チタン）またはＧｅ（ゲルマニウム）であるもの、例えば、Ｋ２ＳｉＦ６：Ｍｎ（これをＫＳＦ蛍光体と呼ぶ）、この構成元素の一部（好ましくは１０モル％以下）をＡｌとＮａで置換したＫ２Ｓｉ１－ｘＮａｘＡｌｘＦ６：Ｍｎ（これをＫＳＮＡＦ蛍光体と呼ぶ）などが挙げられる。 Specifically, Mn 4+ -activated fluoride complex phosphor, the alkali metal hexafluoro complex salt as host crystals A 2 + x M y Mn z F n (A is Na and / or K; M is Si and Al -1 ≦ x ≦ 1 and 0.9 ≦ y + z ≦ 1.1 and 0.001 ≦ z ≦ 0.4 and 5 ≦ n ≦ 7). Among these, those in A is K (potassium) or Na (sodium) from one or more selected, M is Si (silicon) or Ti (titanium) or Ge (germanium), for example, K 2 SiF 6: Mn (This is called a KSF phosphor), K 2 Si 1-x Na x Al x F 6 : Mn (this is KSNAF fluorescence) in which a part (preferably 10 mol% or less) of this constituent element is replaced with Al and Na. (Called the body) and the like.
　その他、下記一般式（８）で表される蛍光体、および下記一般式（９）で表される蛍光体も挙げられる。
　（Ｌａ１－ｘ－ｙＥｕｘＬｎｙ）２Ｏ２Ｓ    （８）
　（一般式（８）において、ｘ及びｙはそれぞれ０．０２≦ｘ≦０．５０及び０≦ｙ≦０．５０を満たす数を表し、ＬｎはＹ、Ｇｄ、Ｌｕ、Ｓｃ、Ｓｍ及びＥｒの少なくとも１種の３価希土類元素を表す。）
　なお、一般式（８）で表される酸硫化ランタン蛍光体をＬＯＳ蛍光体と呼ぶ。
　（ｋ－ｘ）ＭｇＯ・ｘＡＦ２・ＧｅＯ２：ｙＭｎ４＋    （９）
　（一般式（９）において、ｋ、ｘ、ｙは、各々、２．８≦ｋ≦５、０．１≦ｘ≦０．７、０．００５≦ｙ≦０．０１５を満たす数を表し、Ａはカルシウム（Ｃａ）、ストロンチウム（Ｓｒ）、バリウム（Ｂａ）、亜鉛（Ｚｎ）、またはこれらの混合物である。）
　なお、一般式（９）で表されるジャーマネート蛍光体をＭＧＯＦ蛍光体と呼ぶ。 In addition, a phosphor represented by the following general formula (8) and a phosphor represented by the following general formula (9) can also be mentioned.
(La 1-x-y Eu x Ln y) 2 O 2 S (8)
(In the general formula (8), x and y represent numbers satisfying 0.02 ≦ x ≦ 0.50 and 0 ≦ y ≦ 0.50, respectively, and Ln is of Y, Gd, Lu, Sc, Sm and Er. Represents at least one trivalent rare earth element.)
The lanthanum acid sulfide phosphor represented by the general formula (8) is called a LOS phosphor.
(Kx) MgO · xAF 2 · GeO 2 : yMn 4+ (9)
(In the general formula (9), k, x, and y represent numbers satisfying 2.8 ≦ k ≦ 5, 0.1 ≦ x ≦ 0.7, and 0.005 ≦ y ≦ 0.015, respectively. A is calcium (Ca), strontium (Sr), barium (Ba), zinc (Zn), or a mixture thereof.)
The germanate phosphor represented by the general formula (9) is called an MGOF phosphor.
　また、その他、ＳｒＳｉ７Ａｌ３Ｏ２Ｎ１３：Ｅｕ２＋蛍光体や、ＣａＳ：Ｅｕ２＋蛍光体を含んでもよい。 In addition, SrSi 7 Al 3 O 2 N 13 : Eu 2+ phosphor and CaS: Eu 2+ phosphor may be contained.
　赤色蛍光体は、１種類の赤色蛍光体のみを用いてよく、２種以上を組み合わせて用いてもよい。 As the red fluorescent material, only one type of red fluorescent material may be used, or two or more types may be used in combination.
　本実施形態の半導体発光装置では、上記緑色蛍光体及び赤色蛍光体に加え、その他の蛍光体を含んでもよい。その他の蛍光体としては、青色蛍光体、黄色蛍光体、橙色蛍光体、などが挙げられる。 The semiconductor light emitting device of the present embodiment may include other phosphors in addition to the above green phosphor and red phosphor. Examples of other phosphors include a blue phosphor, a yellow fluorescent substance, an orange fluorescent substance, and the like.
　本実施形態の半導体発光装置が出射する光のスペクトルは、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし得る。Ｄｕｖが－０．０５０を下回ると、植物が赤色に見えたり、黒ずんで見えたりする場合がある。一方で、－０．０３０を上回ると、光合成に寄与しない波長域の光強度が高くなり、植物を効率良く育成することが困難となる場合がある。 The spectrum of light emitted by the semiconductor light emitting device of the present embodiment can satisfy −0.050 ≦ Duv ≦ −0.030. When Duv is below -0.050, the plant may appear red or dark. On the other hand, if it exceeds −0.030, the light intensity in the wavelength range that does not contribute to photosynthesis becomes high, and it may be difficult to grow plants efficiently.
　本実施形態の半導体発光装置は上記要件（ｉ）及び／又は（ｉｉ）を充足し得る。
　上記要件（ｉ）は、青色領域と緑色領域との間に、発光スペクトルのボトムピーク（発光極小値：ＩＢＧ）が存在し、ボトムピークの発光強度が、赤色領域のピーク強度（発光極大値：ＩＲ）に対して、１０％以上３０％以下であることを意味する。１２．５％以上であってよく、１５％以上であってよい。また、２７．５％以下であってよく、２５％以下であってよい。（ｉ）を満たすことで、緑色領域にある程度のスペクトル強度を有するため、植物が赤色に見えること及び黒ずんで見えることがなく、植物の生育を確認することができる。 The semiconductor light emitting device of the present embodiment can satisfy the above requirements (i) and / or (ii).
In the above requirement (i), the bottom peak (minimum emission value: IBG ) of the emission spectrum exists between the blue region and the green region, and the emission intensity of the bottom peak is the peak intensity (maximum emission value) in the red region. : It means that it is 10% or more and 30% or less with respect to IR ). It may be 12.5% or more, and may be 15% or more. Further, it may be 27.5% or less, and may be 25% or less. By satisfying (i), since the green region has a certain degree of spectral intensity, the growth of the plant can be confirmed without the plant appearing red or dark.
　上記要件（ｉｉ）は、上記青色領域と緑色領域との間のボトムピーク波長から、５５５ｎｍの波長までのスペクトルの変化がなだらかであることを意味する。すなわち、縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす。傾きａの上限値は、０．００３８以下であってよく、０．００３６以下であってよく、０．００３４以下であってよく、０．００３２以下であってよく、０．００３以下であってよい。
　このように緑色領域、特に視感度が最大となる５５５ｎｍまでの領域のスペクトルに急な変化がないことで、Ｄｕｖの値が特定の範囲となりやすく、また植物が赤色に見えること及び黒ずんで見えること、を防止することができる。 The requirement (ii) means that the change in the spectrum from the bottom peak wavelength between the blue region and the green region to the wavelength of 555 nm is gentle. That is, the vertical axis (Y), the graph of the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), transverse axis (X) and the wavelength (nm), and the I BG, at a wavelength of 555nm The slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 satisfies 0 <a ≦ 0.004. The upper limit of the slope a may be 0.0038 or less, 0.0036 or less, 0.0034 or less, 0.0032 or less, 0.003 or less. Good.
Since there is no sudden change in the spectrum of the green region, especially the region up to 555 nm where the luminosity factor is maximized, the Duv value tends to be in a specific range, and the plant looks red and dark. , Can be prevented.
　本実施形態の半導体発光装置は、更に、以下の（ｉｉｉ）を満たすことが好ましい。
（ｉｉｉ）波長４００ｎｍ以上５００ｎｍ以下の領域に発光極大値ＩＢを有し、０．８≦ＩＢ／ＩＲ≦１．３を満たす
　上記要件（ｉｉｉ）は、半導体発光装置から出射する光のスペクトルにおいて、青色領域の発光ピーク強度（発光極大値ＩＢ）と赤色領域の発光ピーク強度（発光極大値：ＩＲ）が略同一であることを示す。このようなスペクトルであると、光合成を行う葉緑体の光受容体クロロフィルａとクロロフィルｂとの光の吸収バランスがよく、光合成を効率よく行うことができる。
　なお、上記ＩＢ／ＩＲは０．８以上１．２以下であることが好ましく、また１．０以下、即ち発光極大値ＩＲがスペクトル全域における発光最大値となることが好ましい。 The semiconductor light emitting device of the present embodiment further preferably satisfies the following (iii).
(Iii) Wavelength 400nm or 500nm in the following areas have an emission maximum value I B, 0.8 ≦ I B / I above requirements satisfying R ≦ 1.3 (iii) is, of the light emitted from the semiconductor light emitting device in the spectrum, the emission peak intensity of the blue region (emission maximum value I B) and the emission peak intensity of the red region (emission maximum values: I R) indicate that are substantially the same. With such a spectrum, the light absorption balance between the photoreceptors chlorophyll a and chlorophyll b of the chloroplast that performs photosynthesis is good, and photosynthesis can be efficiently performed.
The above it is preferred that the I B / I R is 0.8 to 1.2, also 1.0, i.e., emission maxima I R is preferably made as emission maxima in the entire spectrum.
　本実施形態の半導体発光装置は、更に、以下の（ｉｖ）を満たすことが好ましい。
（ｉｖ）波長６５０ｎｍ以上の領域に発光極大値ＩＲを有する
　上記要件（ｉｖ）は、半導体発光装置から出射するスペクトルが、６５０ｎｍ以上の長波長領域に発光極大値ＩＲを有することを意味する。光合成に寄与する光の波長は４００ｎｍ～７００ｎｍと考えられているが、７００ｎｍを超える長波長領域の光についても、光合成に寄与することを本発明者らは確認した。そのため、７００ｎｍ以上の領域においても発光強度を有するスペクトルとするため、６５０ｎｍ以上の長波長領域に発光極大値ＩＲを有することが好ましい。 The semiconductor light emitting device of the present embodiment further preferably satisfies the following (iv).
(Iv) the requirement that has an emission maximum value I R of the wavelength 650nm or more regions (iv) the spectrum emitted from the semiconductor light emitting device, means having an emission maximum value I R in 650nm or longer wavelength region .. The wavelength of light that contributes to photosynthesis is considered to be 400 nm to 700 nm, but the present inventors have confirmed that light in a long wavelength region exceeding 700 nm also contributes to photosynthesis. Therefore, for a spectrum having an emission intensity in the above region 700 nm, preferably has an emission maximum value I R in 650nm or longer wavelength region.
　本実施形態の半導体発光装置は、更に、以下の（ｖ）を満たすことが好ましい。
（ｖ）発光極小値ＩＢＧの波長λＩＢＧｎｍから波長５５５ｎｍの範囲において、波長５５５ｎｍにおける発光強度Ｉ５５５が発光強度の最大値である
　上記要件（ｖ）は、半導体発光装置から出射するスペクトルが、発光極小値ＩＢＧの波長λＩＢＧｎｍから波長５５５ｎｍの範囲において、長波長になるに従って強度が低下することなく、当該領域中にトップピークを有さないことを意味する。上記領域にトップピークがある場合、励起光のエネルギーの多くが緑色蛍光体に吸収発光されてしまうことで、青色光及び赤色光のエネルギー、強度が相対的に低くなってしまい、光合成に必要な光のエネルギーが相対的に減少して、光合成の効率が向上しない傾向にある。 The semiconductor light emitting device of the present embodiment further preferably satisfies the following (v).
(V) In the range from the wavelength λI BG nm of the emission minimum value I BG to the wavelength 555 nm, the emission intensity I 555 at the wavelength 555 nm is the maximum value of the emission intensity. The above requirement (v) is that the spectrum emitted from the semiconductor light emitting device is In the range from the wavelength λI BG nm of the emission minimum value I BG to the wavelength 555 nm, the intensity does not decrease as the wavelength becomes longer, which means that there is no top peak in the region. When there is a top peak in the above region, most of the energy of the excitation light is absorbed and emitted by the green phosphor, so that the energy and intensity of the blue light and the red light become relatively low, which is necessary for photosynthesis. The energy of light is relatively reduced, and the efficiency of photosynthesis tends not to improve.
　上記Ｄｕｖの条件、並びに（ｉ）乃至（ｖ）の条件を充足するスペクトルを出射する半導体発光装置とするためには、広帯域の緑色蛍光体と広帯域の赤色蛍光体とを含むことが好ましく、広帯域の緑色蛍光体としてＬｕＡＧを用いることがより好ましい。広帯域の緑色蛍光体を用いることで、５００ｎｍ～６００ｎｍの中波長領域である程度の発光強度を有するスペクトルを形成しやすく、また中波長領域に広くある程度の発光強度を有することで、色の見えの再現性への寄与が大きい。
　また、広帯域の赤色蛍光体として窒化物蛍光体であるＳＣＡＳＮ蛍光体またはＣＡＳＮ蛍光体を用いると、６００ｎｍ以上の長波長領域（赤色領域）に大きな発光強度を有するスペクトルを形成しやすく、また光合成に必要な赤色領域のエネルギー量が、赤色半導体発光素子を赤色領域の発光源として用いた場合と比較して大きくなり、植物の育成により好ましい。 In order to obtain a semiconductor light emitting device that emits a spectrum that satisfies the above Duv conditions and the conditions (i) to (v), it is preferable to include a broadband green phosphor and a broadband red phosphor, and a broadband It is more preferable to use LuAG as the green phosphor of. By using a wideband green phosphor, it is easy to form a spectrum having a certain degree of emission intensity in the medium wavelength region of 500 nm to 600 nm, and by having a wide range of emission intensity in the medium wavelength region, color appearance can be reproduced. Great contribution to sex.
Further, when a SCASN phosphor or a CASN phosphor, which is a nitride phosphor, is used as the broadband red phosphor, it is easy to form a spectrum having a large emission intensity in a long wavelength region (red region) of 600 nm or more, and for photosynthesis. The amount of energy required in the red region is larger than that in the case where the red semiconductor light emitting element is used as the light emitting source in the red region, which is preferable for growing plants.
　上記説明した半導体発光装置の構成は特段限定されず、通常、基板上に半導体発光素子を実装し、各種蛍光体を混合した封止樹脂（以下に説明する、波長変換層の一形態である）で半導体発光素子を封止した構成を有する。なお、封止樹脂は、以下に説明する波長変換層の一形態である。
　基板は、典型的にはセラミック基板やアルミ基板が用いられ、アルミ基板とガラスエポキシ基板とを積層した積層基板であってもよく、特段限定されない。
　基板の形状も特段限定されず、典型的には正方形や長方形などの矩形であり、このような基板上に矩形、円形、楕円形などの発光領域（波長変換領域、または封止領域）を有する。 The configuration of the semiconductor light emitting device described above is not particularly limited, and usually, a sealing resin in which a semiconductor light emitting element is mounted on a substrate and various phosphors are mixed (a form of a wavelength conversion layer described below). It has a structure in which a semiconductor light emitting element is sealed with. The sealing resin is a form of the wavelength conversion layer described below.
The substrate is typically a ceramic substrate or an aluminum substrate, and may be a laminated substrate in which an aluminum substrate and a glass epoxy substrate are laminated, and is not particularly limited.
The shape of the substrate is also not particularly limited, and is typically a rectangle such as a square or a rectangle, and has a light emitting region (wavelength conversion region or sealing region) such as a rectangle, a circle, or an ellipse on such a substrate. ..
　半導体発光装置の形態は、砲弾型のＬＥＤであってよく、ＳＭＤ（表面実装デバイス）であってよく、ＣＯＢ（チップオンボード）であってよい。
　植物工場やグリーンハウスに植物照射用として設置する際に、多くの光を照射するためにＳＭＤを複数個並べて配置する場合には、駆動回路が煩雑になる傾向にある。そのため、単一回路で複数の半導体発光装置を駆動可能であり、また同様の出力とする場合により軽量となるＣＯＢ構成とすることが好ましい。 The form of the semiconductor light emitting device may be a bullet-shaped LED, an SMD (surface mount device), or a COB (chip on board).
When a plurality of SMDs are arranged side by side in order to irradiate a large amount of light when installed in a plant factory or a green house for plant irradiation, the drive circuit tends to be complicated. Therefore, it is preferable to have a COB configuration in which a plurality of semiconductor light emitting devices can be driven by a single circuit and the output is the same and the weight is lighter.
　一方で、ＳＭＤ構成はその配光特性から、植物との距離が近い環境においては植物照射用としてより好ましい。半導体発光装置と植物との距離が近い場合には、高出力であるＣＯＢ構成とすると、発光領域の中心に近い部分の光強度が強くなり、植物に対して照射光が不均一になる場合がある。そのため、半導体発光装置と植物との距離が、凡そ１０ｃｍ～６０ｃｍ程度の場合には、半導体発光装置を発光面の小さいＳＭＤ構成として照明することが好ましい。
　他方、上記のとおり、ＣＯＢ構成は高出力であることから、半導体発光装置と植物との距離が６０ｃｍ～２ｍ程度の場合には、半導体発光装置をＣＯＢ構成として照明することが好ましい。 On the other hand, the SMD configuration is more preferable for plant irradiation in an environment where the distance from the plant is short because of its light distribution characteristics. When the distance between the semiconductor light emitting device and the plant is short, if the COB configuration has a high output, the light intensity of the portion near the center of the light emitting region becomes strong, and the irradiation light may become non-uniform with respect to the plant. is there. Therefore, when the distance between the semiconductor light emitting device and the plant is about 10 cm to 60 cm, it is preferable to illuminate the semiconductor light emitting device as an SMD configuration having a small light emitting surface.
On the other hand, as described above, since the COB configuration has a high output, it is preferable to illuminate the semiconductor light emitting device as the COB configuration when the distance between the semiconductor light emitting device and the plant is about 60 cm to 2 m.
　また、広範囲の植物に対して光を照射するために、長手方向に長尺である矩形の基板に、半導体発光素子を並べて配置した長尺ＣＯＢ構成とすることも好ましい。一例としては、長手方向に半導体発光素子を５個以上、１０個以上、１５個以上、２０個以上、規則的に、又はアトランダムに配置してよく、所望の照明範囲により適宜設定することができる。
　更には、ＳＭＤ構成であっても、ＣＯＢ構成であっても、半導体発光素子の実装面上に銀などの反射膜を備えることが、半導体発光装置の光放射光率を向上させるため、好ましい。 Further, in order to irradiate a wide range of plants with light, it is also preferable to have a long COB configuration in which semiconductor light emitting elements are arranged side by side on a rectangular substrate that is long in the longitudinal direction. As an example, five or more, 10 or more, 15 or more, 20 or more semiconductor light emitting elements may be arranged in the longitudinal direction regularly or at random, and may be appropriately set according to a desired illumination range. it can.
Further, regardless of whether it has an SMD configuration or a COB configuration, it is preferable to provide a reflective film such as silver on the mounting surface of the semiconductor light emitting device because the light synchrotron radiation coefficient of the semiconductor light emitting device is improved.
　本実施形態の半導体発光装置は、植物照射用の半導体発光装置として好ましく用いられ、外光をシャットアウトした閉鎖型植物工場で使用してもよく、太陽光と半導体発光装置を併用するグリーンハウスで使用してもよい。
　本実施形態の半導体発光装置は、光合成植物全般の発育に有効であり、例えば野菜、果物、葉物、芝生、育苗を含む。また、温暖化などの環境変化に対応するための新種苗の育成（穀物の育苗）への適用も可能である。 The semiconductor light emitting device of the present embodiment is preferably used as a semiconductor light emitting device for plant irradiation, may be used in a closed plant factory in which external light is shut out, or in a green house in which sunlight and a semiconductor light emitting device are used in combination. You may use it.
The semiconductor light emitting device of the present embodiment is effective for the growth of photosynthetic plants in general, and includes, for example, vegetables, fruits, leaves, lawns, and seedlings. It can also be applied to the cultivation of new seedlings (grain seedlings) to respond to environmental changes such as warming.
　また、本発明の別の形態は、少なくとも、青色半導体発光素子と、緑色蛍光体及び赤色蛍光体を含む波長変換層と、を備えた植物育成用半導体発光装置から出射する光のスペクトルを設計する方法であって、
　前記半導体発光装置から出射する光が、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが上記（ｉ）及び（ｉｉ）を満たすように、好ましくは上記（ｉｉｉ）乃至（ｖ）のうち少なくとも１つを更に満たすように、前記波長変換層を調製するステップ、を含む、設計方法である。 In addition, another embodiment of the present invention designs a spectrum of light emitted from a semiconductor light emitting device for plant growth, which includes at least a blue semiconductor light emitting device and a wavelength conversion layer containing a green phosphor and a red phosphor. It ’s a method,
Preferably, the above (iii) to (v) so that the light emitted from the semiconductor light emitting device satisfies −0.050 ≦ Duv ≦ −0.030 and the spectrum thereof satisfies the above (i) and (ii). ) Is a design method including a step of preparing the wavelength conversion layer so as to further satisfy at least one of the above.
　波長変換層の調製は、例えば蛍光体を分散するマトリクスと蛍光体とを混合することで行うことができる。マトリクスは樹脂マトリクスであってよく、ガラスマトリクスであってよく、セラミックマトリクスであってよい。この際に、上記（ｉ）及び（ｉｉ）を満たすように、好ましくは上記（ｉｉｉ）乃至（ｖ）のうち少なくとも１つを更に満たすように、緑色蛍光体及び赤色蛍光体を含む蛍光体を選択し、波長変換層中の蛍光体の種類及び含有量を適宜調整する。一例としては、波長変換層中の蛍光体全量に対し、緑色蛍光体を７５重量％以上９０重量％以下とし、赤色蛍光体を１０重量％以上２５重量％以下とすることがあげられるが、当業者であれば、用いる蛍光体の特徴、特性に基づいて、波長変換層中の蛍光体の種類及び含有量を適宜調整できる。 The wavelength conversion layer can be prepared, for example, by mixing a matrix for dispersing the phosphor and the phosphor. The matrix may be a resin matrix, a glass matrix, or a ceramic matrix. At this time, a phosphor containing a green phosphor and a red phosphor is provided so as to satisfy the above (i) and (ii), preferably further satisfying at least one of the above (iii) to (v). Select and appropriately adjust the type and content of the phosphor in the wavelength conversion layer. As an example, the green phosphor is 75% by weight or more and 90% by weight or less, and the red phosphor is 10% by weight or more and 25% by weight or less with respect to the total amount of phosphors in the wavelength conversion layer. A trader can appropriately adjust the type and content of the phosphor in the wavelength conversion layer based on the characteristics and characteristics of the phosphor used.
　以下、本発明者らが行った実験結果を示す。
＜半導体発光装置１～６及び７～８の製造＞
　青色発光ダイオード（ピーク波長４５７ｎｍ）、緑色蛍光体（ＬｕＡＧ、ピーク波長５１５～５２０ｎｍ、半値幅１１０ｎｍ）、赤色蛍光体（半導体発光装置１、４、５はＳＣＡＳＮ、ピーク波長６２０～６４０ｎｍ、半値幅８４ｎｍ、半導体発光装置２、３、６はＣＡＳＮ、ピーク波長６５０～６５５ｎｍ、半値幅９０～９５ｎｍ）を用いて、半導体発光装置１乃至半導体発光装置６を製造した。 The results of the experiments conducted by the present inventors are shown below.
<Manufacturing of semiconductor light emitting devices 1 to 6 and 7 to 8>
Blue light emitting diode (peak wavelength 457 nm), green phosphor (LuAG, peak wavelength 515 to 520 nm, half price width 110 nm), red phosphor (semiconductor light emitting devices 1, 4 and 5 are SCASN, peak wavelength 620 to 640 nm, half price width 84 nm) , Semiconductor light emitting devices 2, 3 and 6 have CASN, peak wavelength 650 to 655 nm, half price width 90 to 95 nm), and semiconductor light emitting devices 1 to semiconductor light emitting devices 6 have been manufactured.
　半導体発光装置７として、青色発光ダイオード（ピーク波長４５１ｎｍ）と赤色蛍光体（ＳＣＡＳＮ、ピーク波長６２９ｎｍ、半値幅８４ｎｍ）とを用いて、半導体発光装置７を製造した。
　半導体発光装置８として、Ｒａ８０でＣＣＴ４０００Ｋの半導体発光装置８を準備した。
　半導体発光装置１、２、７及び８の出射光のスペクトルを図１に示し、出射光のスペクトルに関する特性パラメータを表１に示す。また、表２に、各半導体発光装置の出射光の演色性評価数を示す。 As the semiconductor light emitting device 7, the semiconductor light emitting device 7 was manufactured by using a blue light emitting diode (peak wavelength 451 nm) and a red phosphor (SCASN, peak wavelength 629 nm, half width 84 nm).
As the semiconductor light emitting device 8, a semiconductor light emitting device 8 having a CCT 4000K was prepared with Ra80.
The spectra of the emitted light of the semiconductor light emitting devices 1, 2, 7 and 8 are shown in FIG. 1, and the characteristic parameters relating to the spectra of the emitted light are shown in Table 1. Table 2 shows the color rendering index evaluation numbers of the emitted light of each semiconductor light emitting device.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
＜色の見え評価＞
　半導体発光装置１及び７を用いて、発育途中のミニトマト（赤色の果実及び緑色の果実を含む）を照射した際の、色の見えを評価した。
　半導体発光装置１は、ミニトマトの赤色の果実及び緑色の果実をクリアに認識することができた。一方で、緑色領域のスペクトルが無い半導体発光装置７では、緑色の果実は赤く、更に赤い果実は黒ずんで見えた。 <Evaluation of color appearance>
The appearance of color when irradiating developing cherry tomatoes (including red fruits and green fruits) with semiconductor light emitting devices 1 and 7 was evaluated.
The semiconductor light emitting device 1 was able to clearly recognize the red fruits and the green fruits of the cherry tomatoes. On the other hand, in the semiconductor light emitting device 7 having no spectrum in the green region, the green fruits appeared red and the red fruits appeared dark.
　また、表２の演色性評価数から、植物の葉や茎、若い果実など主に緑色の箇所の見えに影響する演色性評価数Ｒ３、Ｒ４、Ｒ１１、Ｒ１４；トマト、パプリカ等の果実など主に赤色の箇所の見えに影響する演色性評価数Ｒ９；花房になど主に黄色の箇所の見えに影響する演色性評価数Ｒ１０、に関し、半導体発光装置１～６及び８は、半導体発光装置７に対して高い演色性評価数であった。
　これらより、半導体発光装置１～６及び８は、半導体発光装置７に比べて、植物の成長度合いの把握に必要な色の忠実度がより高いスペクトルの光を出射するといえる。なお、半導体発光装置１から出射する光で照射した発育途中のミニトマトと、半導体発光装置７から出射する光で照射した発育途中のミニトマトの写真を図２に示す。 In addition, from the color rendering index in Table 2, the color rendering index R3, R4, R11, R14, which mainly affects the appearance of green parts such as leaves, stems, and young fruits of plants; mainly fruits such as tomato and paprika. Regarding the color rendering index R9 that affects the appearance of the red part, and the color rendering index R10 that mainly affects the appearance of the yellow part such as in the flower cluster, the semiconductor light emitting devices 1 to 6 and 8 are the semiconductor light emitting device 7. It was a high color rendering index.
From these, it can be said that the semiconductor light emitting devices 1 to 6 and 8 emit light having a spectrum having higher color fidelity required for grasping the degree of plant growth as compared with the semiconductor light emitting device 7. A photograph of a developing cherry tomato irradiated with light emitted from the semiconductor light emitting device 1 and a developing cherry tomato irradiated with light emitted from the semiconductor light emitting device 7 is shown in FIG.
＜発育評価Ｉ＞
　培養液を供給してリーフレタスを栽培する太陽光併用型植物工場において、高圧ナトリウムランプ（ＨＰＳ）、半導体発光装置１及び７を用いてリーフレタスを照射し、その発育の評価を行った。栽培環境は、室温２２℃、湿度５０～７０％、培養液のｐＨ５．５～６．０、培養液の電導率　ＥＣ１．５～２．０ｍＳ／ｃｍ、ＰＰＦＤ（光合成有効光量子束密度）　２３０μｍｏｌ／ｓｅｃ・ｍ２、ライトタイミング　ＯＮ／ＯＦＦ１２時間で、３５日間栽培した。結果を図３に示す。
　図３より、葉の重量、葉の大きさともに、半導体発光装置１及び７から出射する光を照射したリーフレタスは、従来から屋内植物栽培に広く使用されているＨＰＳ光源から出射する光を照射したリーフレタスと比較して高い発育を示した。
　上記色の見え評価において、色再現性に大きな違いがあった半導体発光装置１と７との間に、植物の発育では大きな違いはないことが理解できる。 <Growth evaluation I>
In a solar-combined plant factory for cultivating leaf lettuce by supplying a culture solution, leaf lettuce was irradiated using a high-pressure sodium lamp (HPS) and semiconductor light emitting devices 1 and 7, and their growth was evaluated. The cultivation environment is room temperature 22 ° C., humidity 50-70%, culture solution pH 5.5-6.0, culture solution conductivity EC1.5-2.0 mS / cm, PPFD (photosynthetic effective photon bundle density) 230 μmol / It was cultivated for 35 days at sec · m 2 and light timing ON / OFF 12 hours. The results are shown in FIG.
From FIG. 3, both the leaf weight and the leaf size, the leaf lettuce irradiated with the light emitted from the semiconductor light emitting devices 1 and 7 irradiates the light emitted from the HPS light source widely used for indoor plant cultivation. It showed high growth compared to the leaf lettuce.
In the color appearance evaluation, it can be understood that there is no significant difference in plant development between the semiconductor light emitting devices 1 and 7, which have a large difference in color reproducibility.
＜発育評価ＩＩ＞
　半導体発光装置２及び８を用いて、上記発育評価Ｉの方法と同様に、リーフレタスを照射し、その発育の評価を行った。その結果、半導体発光装置２から出射する光を照射したリーフレタスは、半導体発光装置８から出射する光を照射したリーフレタスと比較して、葉の重量で約２７％、葉の大きさで約３３％高い発育を示した。
　上記色の見え評価において、色再現性に大きな違いがなかった半導体発光装置２と８との間に、植物の発育では大きな違いがあることが理解できる。
　これは、半導体発光装置８は、緑色領域の出力が大きすぎることで赤色蛍光体の変換効率が減少し赤色領域の光出力が小さくなっているため光合成ロスが発生し、乾燥重量、葉体面積が共に減少したと考えられる。
　また、通常７００ｎｍより長波長領域の光は光合成光量子束密度の算出には考慮されないが、７００ｎｍよりも長波長領域に、より光出力を多く有する半導体発光装置２においても、半導体発光装置７と同等の発育結果を得た。 <Growth Evaluation II>
Using the semiconductor light emitting devices 2 and 8, the leaf lettuce was irradiated and the growth was evaluated in the same manner as in the method of the growth evaluation I described above. As a result, the leaf lettuce irradiated with the light emitted from the semiconductor light emitting device 2 has a leaf weight of about 27% and a leaf size of about 27% as compared with the leaf lettuce irradiated with the light emitted from the semiconductor light emitting device 8. It showed 33% higher growth.
It can be understood that there is a large difference in plant development between the semiconductor light emitting devices 2 and 8 in which the color reproducibility was not significantly different in the color appearance evaluation.
This is because the semiconductor light emitting device 8 has a too large output in the green region, so that the conversion efficiency of the red phosphor is reduced and the light output in the red region is small, so that photosynthetic loss occurs, and the dry weight and frond area are reduced. Is considered to have decreased together.
Further, although light in a wavelength region longer than 700 nm is usually not considered in the calculation of the photosynthetic photon flux density, the semiconductor light emitting device 2 having more light output in the wavelength region longer than 700 nm is equivalent to the semiconductor light emitting device 7. I got the growth result of.

Claims (10)

  1. 　少なくとも、青色半導体発光素子と、緑色蛍光体と、赤色蛍光体と、を含む植物育成用半導体発光装置であって、
    　前記半導体発光装置から出射する光は、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）を満たす、植物育成用半導体発光装置。
    （ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす     A semiconductor light emitting device for plant growth, which comprises at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
    A semiconductor light emitting device for plant growth, wherein the light emitted from the semiconductor light emitting device satisfies −0.050 ≦ Duv ≦ −0.030 and its spectrum satisfies the following (i).
    (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. Satisfy 3 or less
  2. 　少なくとも、青色半導体発光素子と、緑色蛍光体と、赤色蛍光体と、を含む植物育成用半導体発光装置であって、
    　前記半導体発光装置から出射する光のスペクトルが以下の（ｉｉ）を満たす、植物育成用半導体発光装置。
    （ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす     A semiconductor light emitting device for plant growth, which comprises at least a blue semiconductor light emitting device, a green phosphor, and a red phosphor.
    A semiconductor light emitting device for plant growth, wherein the spectrum of light emitted from the semiconductor light emitting device satisfies the following (ii).
    (Ii) the vertical axis (Y), the emission peak intensity of the spectrum is 100% and the relative emission intensity (%), horizontal axis (X) in the graph the wavelength (nm), and the I BG, wavelength 555nm The slope a of the straight line connecting the emission intensity I 555 and the emission intensity I 555 in the above satisfies 0 <a ≦ 0.004.
  3. 　前記半導体発光装置から出射する光のスペクトルは、更に、以下の（ｉｉｉ）を満たす、請求項１又は２に記載の植物育成用半導体発光装置。
    （ｉｉｉ）波長４００ｎｍ以上５００ｎｍ以下の領域に発光極大値ＩＢを有し、０．８≦ＩＢ／ＩＲ≦１．３を満たす     The semiconductor light emitting device for plant growth according to claim 1 or 2, wherein the spectrum of light emitted from the semiconductor light emitting device further satisfies the following (iii).
    (Iii) has an emission maximum value I B to 500nm following areas than the wavelength 400 nm, satisfy 0.8 ≦ I B / I R ≦ 1.3
  4. 　前記半導体発光装置から出射する光のスペクトルは、更に、以下の（ｉｖ）を満たす、請求項１又は２に記載の植物育成用半導体発光装置。
    （ｉｖ）波長６５０ｎｍ以上の領域に発光極大値ＩＲを有する     The semiconductor light emitting device for plant growth according to claim 1 or 2, wherein the spectrum of light emitted from the semiconductor light emitting device further satisfies the following (iv).
    (Iv) the wavelength 650nm or more regions has an emission maximum value I R
  5. 　前記半導体発光装置から出射する光のスペクトルは、更に、以下の（ｖ）を満たす、請求項１又は２に記載の植物育成用半導体発光装置。
    （ｖ）発光極小値ＩＢＧの波長λＩＢＧｎｍから波長５５５ｎｍの範囲において、波長５５５ｎｍにおける発光強度Ｉ５５５が発光強度の最大値である     The semiconductor light emitting device for plant growth according to claim 1 or 2, wherein the spectrum of light emitted from the semiconductor light emitting device further satisfies the following (v).
    (V) In the range from the wavelength λI BG nm of the emission minimum value I BG to the wavelength 555 nm, the emission intensity I 555 at the wavelength 555 nm is the maximum value of the emission intensity.
  6. 　前記赤色蛍光体は、窒化物蛍光体を含む、請求項１から５のいずれか１項に記載の植物育成用半導体発光装置。 The semiconductor light emitting device for plant growth according to any one of claims 1 to 5, wherein the red phosphor contains a nitride phosphor.
  7. 　前記赤色蛍光体は、半値幅が７５ｎｍ以上である赤色蛍光体を含む、請求項１から６のいずれか１項に記載の植物育成用半導体発光装置。 The semiconductor light emitting device for plant growth according to any one of claims 1 to 6, wherein the red fluorescent substance contains a red fluorescent substance having a half width of 75 nm or more.
  8. 　前記緑色蛍光体は、ピーク波長が５１０ｎｍ以上５４０ｎｍ以下であり、且つ半値幅が１００ｎｍ以上１２０ｎｍ以下である緑色蛍光体を含む、請求項１から７のいずれか１項に記載の植物育成用半導体発光装置。 The semiconductor light emitting for plant growth according to any one of claims 1 to 7, wherein the green fluorescent substance contains a green fluorescent substance having a peak wavelength of 510 nm or more and 540 nm or less and a half width of 100 nm or more and 120 nm or less. apparatus.
  9. 　少なくとも青色半導体発光素子と蛍光体と含む半導体発光装置から出射する光により植物を照射する照明工程、を含む照明方法であって、
    　前記照明工程において、前記半導体発光装置から出射する光が植物を照明した際に、前記植物の位置で測定した光が－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）及び（ｉｉ）を満たす、照明方法。
    （ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす
    （ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす     A lighting method including at least a lighting step of illuminating a plant with light emitted from a semiconductor light emitting device including a blue semiconductor light emitting element and a phosphor.
    In the lighting step, when the light emitted from the semiconductor light emitting device illuminates the plant, the light measured at the position of the plant satisfies −0.050 ≦ Duv ≦ −0.030, and the spectrum thereof is as follows. A lighting method that satisfies (i) and (ii).
    (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. In a graph in which the vertical axis (Y) satisfying 3 or less is the relative emission intensity (%) with the emission peak intensity of the spectrum as 100%, and the horizontal axis (X) is the wavelength (nm), the IBG And the slope a of the straight line connecting the emission intensity I 555 at the wavelength of 555 nm satisfies 0 <a≤0.004.
  10. 　少なくとも、青色半導体発光素子と、緑色蛍光体及び赤色蛍光体を含む波長変換層と、を備えた植物育成用半導体発光装置から出射する光のスペクトルを設計する方法であって、
    　前記半導体発光装置から出射する光が、－０．０５０≦Ｄｕｖ≦－０．０３０を満たし、且つそのスペクトルが以下の（ｉ）及び（ｉｉ）を満たすように、前記波長変換層を調製するステップ、を含む、設計方法。
    （ｉ）波長６００ｎｍ以上の領域に発光極大値ＩＲを有し、波長４５０ｎｍ以上５００ｎｍ以下の領域に発光極小値ＩＢＧを有し、且つＩＢＧ／ＩＲの値が０．１以上０．３以下を満たす
    （ｉｉ）縦軸（Ｙ）を、スペクトルの発光ピーク強度を１００％とした相対発光強度（％）とし、横軸（Ｘ）を波長（ｎｍ）としたグラフにおいて、前記ＩＢＧと、波長５５５ｎｍにおける発光強度Ｉ５５５と、を結ぶ直線の傾きａが０＜ａ≦０．００４を満たす     It is a method of designing a spectrum of light emitted from a semiconductor light emitting device for plant growth, which includes at least a blue semiconductor light emitting device and a wavelength conversion layer containing a green phosphor and a red phosphor.
    The step of preparing the wavelength conversion layer so that the light emitted from the semiconductor light emitting device satisfies −0.050 ≦ Duv ≦ −0.030 and the spectrum satisfies the following (i) and (ii). , Including, design method.
    (I) has an emission maximum value I R of the wavelength 600nm or more regions, has an emission minimum value I BG to 500nm following areas than the wavelength 450 nm, and the value of I BG / I R is 0.1 or higher 0. In a graph in which the vertical axis (Y) satisfying 3 or less is the relative emission intensity (%) with the emission peak intensity of the spectrum as 100%, and the horizontal axis (X) is the wavelength (nm), the IBG And the slope a of the straight line connecting the emission intensity I 555 at the wavelength of 555 nm satisfies 0 <a≤0.004.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015163053A (en) * 2014-02-28 2015-09-10 シャープ株式会社 plant lighting system
JP2016111190A (en) * 2014-12-05 2016-06-20 日亜化学工業株式会社 Light emitting device
JP2016202072A (en) * 2015-04-22 2016-12-08 ツジコー株式会社 Luminescent device and tomato-seedlings cultivation apparatus
WO2017126681A1 (en) * 2016-01-21 2017-07-27 株式会社 東芝 Lighting device and cultivation equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015163053A (en) * 2014-02-28 2015-09-10 シャープ株式会社 plant lighting system
JP2016111190A (en) * 2014-12-05 2016-06-20 日亜化学工業株式会社 Light emitting device
JP2016202072A (en) * 2015-04-22 2016-12-08 ツジコー株式会社 Luminescent device and tomato-seedlings cultivation apparatus
WO2017126681A1 (en) * 2016-01-21 2017-07-27 株式会社 東芝 Lighting device and cultivation equipment

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