WO2020228195A1 - Display panel and manufacturing method - Google Patents

Display panel and manufacturing method Download PDF

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Publication number
WO2020228195A1
WO2020228195A1 PCT/CN2019/104610 CN2019104610W WO2020228195A1 WO 2020228195 A1 WO2020228195 A1 WO 2020228195A1 CN 2019104610 W CN2019104610 W CN 2019104610W WO 2020228195 A1 WO2020228195 A1 WO 2020228195A1
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Prior art keywords
layer
display panel
area
light
film transistor
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PCT/CN2019/104610
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French (fr)
Chinese (zh)
Inventor
姜亮
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020228195A1 publication Critical patent/WO2020228195A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the application relates to the display field, and in particular to a display panel and a manufacturing method.
  • OLED Organic Light-Emitting Diode
  • the area of the cathode layer of the OLED will also increase.
  • Top-emitting OLED displays require that the cathode layer's transmittance is not too thick. Such a large area of the cathode layer will inevitably lead to a decrease in in-plane voltage, resulting in a decrease in the brightness of the screen and poor brightness uniformity.
  • the present application provides a display panel and a manufacturing method to solve the technical problem that the auxiliary electrode and the cathode layer of the existing OLED display panel cannot be effectively connected.
  • the present application provides a manufacturing method of a display panel, which includes:
  • the thin film transistor layer includes a thin film transistor unit and an auxiliary electrode
  • the first via hole exposes a part of the auxiliary electrode
  • the first common electrode is electrically connected to the auxiliary electrode through the first via hole.
  • the display panel includes a display area
  • the display area includes the first area located at the edge of the display area;
  • the auxiliary electrode is located in the first region.
  • the auxiliary electrode includes a first electrode and a second electrode
  • the first electrode and one of the light-shielding layer, the active layer or the gate in the thin film transistor layer are provided in the same layer;
  • the second electrode and the source and drain electrodes in the thin film transistor layer are arranged in the same layer.
  • the first device includes a vacuum chamber, a fixing member located in the vacuum chamber, a light source, and a first mask.
  • the step of using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel includes:
  • the light source is used to pattern the panel to be processed, so that at least one first via hole is formed in the first area of the display panel.
  • the first mask includes a light-transmitting area and a light-shielding area
  • the light-transmitting area and the light-shielding area are arranged at intervals;
  • the light-transmitting area corresponds to the first via hole.
  • the light source is one of a surface laser source or a linear laser source.
  • the first organic layer includes a pixel definition layer and a light emitting layer
  • the first common electrode layer is a cathode layer of the display panel.
  • the first via hole penetrates the light-emitting layer and the pixel definition layer.
  • This application also proposes a display panel, wherein the display panel is manufactured by a manufacturing method of the display panel, and the manufacturing method of the display panel includes:
  • the thin film transistor layer includes a thin film transistor unit and an auxiliary electrode
  • the first via hole exposes a part of the auxiliary electrode
  • the first common electrode is electrically connected to the auxiliary electrode through the first via hole.
  • the display panel includes a display area
  • the display area includes the first area located at the edge of the display area;
  • the auxiliary electrode is located in the first region.
  • the auxiliary electrode includes a first electrode and a second electrode
  • the first electrode and one of the light-shielding layer, the active layer or the gate in the thin film transistor layer are provided in the same layer;
  • the second electrode and the source and drain electrodes in the thin film transistor layer are arranged in the same layer.
  • the first device includes a vacuum chamber, a fixing member located in the vacuum chamber, a light source, and a first mask.
  • the step of using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel includes:
  • the light source is used to pattern the panel to be processed, so that at least one first via hole is formed in the first area of the display panel.
  • the first mask includes a light-transmitting area and a light-shielding area
  • the light-transmitting area and the light-shielding area are arranged at intervals;
  • the light-transmitting area corresponds to the first via hole.
  • the light source is one of a surface laser source or a linear laser source.
  • the first organic layer includes a pixel definition layer and a light emitting layer
  • the first common electrode layer is a cathode layer of the display panel.
  • the first via hole penetrates the light-emitting layer and the pixel definition layer.
  • This application uses a laser source and a specific mask to remove the organic layer on the auxiliary electrode, electrically connects the cathode layer in the display panel with the auxiliary electrode, increases the potential of the cathode layer, and reduces the voltage drop in the display panel .
  • a photomask is used to remove the organic layer on the auxiliary electrode, realize the effective conduction between the auxiliary electrode and the cathode layer, and improve the process efficiency.
  • Figure 1 is a plan structure diagram of a display panel of this application.
  • FIG. 2 is a step diagram of the manufacturing method of the display panel of this application.
  • 3A to 3D are process steps diagrams of the manufacturing method of the display panel of this application.
  • Figure 4 is a structural diagram of the first device of this application.
  • Figure 5 is a structural diagram of the first mask of the application.
  • FIG. 1 is a plan structure diagram of the display panel 100 of the present application.
  • the display panel 100 includes a display area 400 and a non-display area 500 located at the periphery of the display area 400.
  • the display area 400 includes a first area 200 located at the edge of the display area 400 and a second area 300 surrounded by the first area 200.
  • An auxiliary electrode 30 is provided in the first region 200.
  • the second region 300 is provided with a substrate 101, a thin film transistor layer 10 on the substrate 101, and a light emitting device layer 20 on the thin film transistor layer 10.
  • the thin film transistor layer 10 includes a thin film transistor unit 11 and an auxiliary electrode 30.
  • the thin film transistor unit 11 includes an etching barrier type, a back channel etching type, or a top gate thin film transistor type structure, which is not specifically limited. This application takes the top-gate thin film transistor type as an example for description.
  • the thin film transistor unit 11 includes a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, a gate 106, an inter-insulating layer 107, a source and drain 108, a passivation layer 109, and a flat layer 110.
  • FIG. 2 is a step diagram of a manufacturing method of the display panel 100 of this application.
  • FIGS. 3A to 3D are process steps diagrams of the manufacturing method of the display panel 100 of this application.
  • the manufacturing method of the display panel 100 includes:
  • step S10 includes:
  • the first electrode 301 may also be provided in the same layer as one of the active layer 104 or the gate 106 in the thin film transistor layer 10.
  • the second electrode 302 and the source and drain 108 in the thin film transistor layer 10 are formed in the same photomask process.
  • Step S20 includes:
  • the first organic layer 21 includes the pixel definition layer 204 and the light-emitting layer 202.
  • this step is mainly to use the first device 600 to remove the first organic layer 21 on the auxiliary electrode 30 so that a part of the first via 304 is exposed.
  • FIG. 4 is a structural diagram of the first device 600 of this application.
  • the first device 600 includes a vacuum chamber 501, a fixing member located in the vacuum chamber 501, a light source 502 and a first mask 503.
  • step S30 specifically includes:
  • FIG. 5 is a structural diagram of the first mask 503 of this application.
  • the first mask 503 includes a light-transmitting area 506 and a light-shielding area 507.
  • the light-transmitting area 506 and the light-shielding area 507 are arranged at intervals.
  • the transparent region 506 corresponds to the first via 304.
  • the light source 502 is one of a surface laser source or a linear laser source.
  • the light source 502 is a surface laser source.
  • the light source 502 irradiates the shading area 507, it is blocked and cannot irradiate the panel 504 to be processed.
  • the light source 502 irradiates the light-transmitting area 506, it irradiates the panel 504 to be processed through the light-transmitting hole in the light-transmitting area 506, so that the The organic material is heated and sublimated, exposing the corresponding part of the second electrode 302.
  • the line laser source can move under the panel 504 to be processed at a uniform speed, so that the first organic layer 21 can be uniformly heated by the light source 502.
  • the first device 600 further includes a cooling member 505.
  • the cooling member 505 prevents irreversible damage to the internal film structure of the panel 504 to be processed due to overheating.
  • the panel after step S30 is taken out from the vacuum chamber 501, and the first common electrode 203 is prepared.
  • the first common electrode 203 is the cathode layer of the light emitting device layer 20.
  • the first common electrode 203 is electrically connected to the auxiliary electrode 30 through the first via 304.
  • the application also proposes a display panel, which is manufactured by the above-mentioned manufacturing method.
  • This application provides a display panel and a manufacturing method.
  • the manufacturing method includes providing a substrate, forming a thin film transistor layer on the substrate, the thin film transistor layer including a thin film transistor unit and an auxiliary electrode; A first organic layer is formed on the transistor layer; the first organic layer is patterned by a first device so that at least one first via is formed in the first area of the display panel; in the first organic layer A first common electrode is formed thereon.
  • This application uses a laser source and a specific mask to remove the organic layer on the auxiliary electrode, electrically connects the cathode layer in the display panel with the auxiliary electrode, increases the potential of the cathode layer, and reduces the voltage drop in the display panel .
  • a photomask is used to remove the organic layer on the auxiliary electrode, realize the effective conduction between the auxiliary electrode and the cathode layer, and improve the process efficiency.

Abstract

Provided in the present application are a display panel and a manufacturing method. The manufacturing method comprises providing a substrate, and forming a thin-film transistor layer on the substrate, wherein the thin-film transistor layer comprises a thin-film transistor unit and an auxiliary electrode; forming a first organic layer on the thin-film transistor layer; carrying out patterning on the first organic layer by means of a first apparatus, so that at least one via hole is formed in a first area of the display panel; and forming a first common electrode on the first organic layer.

Description

显示面板及制作方法Display panel and manufacturing method 技术领域Technical field
本申请涉及显示领域，特别涉及一种显示面板及制作方法。The application relates to the display field, and in particular to a display panel and a manufacturing method.
背景技术Background technique
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。In flat panel display technology, Organic Light-Emitting Diode (OLED) displays have many advantages, such as light and thin, active light emission, fast response speed, large viewing angle, wide color gamut, high brightness and low power consumption. The third-generation display technology after the liquid crystal display.
随着显示面板尺寸的增加，OLED的阴极层面积也会增加。顶发光的OLED显示屏对于阴极层的透过率要求导致阴极不能太厚，这样大面积的阴极层必定导致面内电压的降低，从而导致画面的发光亮度降低，以及比较差的亮度均一性。As the size of the display panel increases, the area of the cathode layer of the OLED will also increase. Top-emitting OLED displays require that the cathode layer's transmittance is not too thick. Such a large area of the cathode layer will inevitably lead to a decrease in in-plane voltage, resulting in a decrease in the brightness of the screen and poor brightness uniformity.
现有面板一般会在面板内增加辅助电极，以拉高阴极层的电位，缓解显示面板的压降。但是对于如何实现辅助电极与阴极层的有效导通还存在一些问题。Existing panels generally add auxiliary electrodes in the panel to increase the potential of the cathode layer and relieve the voltage drop of the display panel. However, there are still some problems in how to realize the effective conduction between the auxiliary electrode and the cathode layer.
因此，目前亟需一种显示面板的制作方法以解决上述问题。Therefore, there is an urgent need for a manufacturing method of a display panel to solve the above-mentioned problems.
技术问题technical problem
本申请提供一种显示面板及制作方法，以解决现有OLED显示面板辅助电极与阴极层无法有效导通的技术问题。The present application provides a display panel and a manufacturing method to solve the technical problem that the auxiliary electrode and the cathode layer of the existing OLED display panel cannot be effectively connected.
技术解决方案Technical solutions
本申请提供一种显示面板的制作方法，其包括：The present application provides a manufacturing method of a display panel, which includes:
提供一衬底，在所述衬底上形成薄膜晶体管层，Providing a substrate, forming a thin film transistor layer on the substrate,
所述薄膜晶体管层包括薄膜晶体管单元及辅助电极；The thin film transistor layer includes a thin film transistor unit and an auxiliary electrode;
在所述薄膜晶体管层上形成第一有机层；Forming a first organic layer on the thin film transistor layer;
利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔，Using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel,
所述第一过孔使部分所述辅助电极裸露；The first via hole exposes a part of the auxiliary electrode;
在所述第一有机层上形成第一公共电极，Forming a first common electrode on the first organic layer,
所述第一公共电极通过所述第一过孔与所述辅助电极电连接。The first common electrode is electrically connected to the auxiliary electrode through the first via hole.
在本申请的制作方法中，In the production method of this application,
所述显示面板包括显示区域；The display panel includes a display area;
所述显示区域包括位于所述显示区域边缘的所述第一区；The display area includes the first area located at the edge of the display area;
所述辅助电极位于所述第一区内。The auxiliary electrode is located in the first region.
在本申请的制作方法中，In the production method of this application,
所述辅助电极包括第一电极和第二电极；The auxiliary electrode includes a first electrode and a second electrode;
所述第一电极与所述薄膜晶体管层中的遮光层、有源层或栅极中的一者同层设置；The first electrode and one of the light-shielding layer, the active layer or the gate in the thin film transistor layer are provided in the same layer;
所述第二电极与所述薄膜晶体管层中的源漏极同层设置。The second electrode and the source and drain electrodes in the thin film transistor layer are arranged in the same layer.
在本申请的制作方法中，In the production method of this application,
所述第一装置包括真空腔、位于所述真空腔内的固定构件、光源以及第一掩膜版。The first device includes a vacuum chamber, a fixing member located in the vacuum chamber, a light source, and a first mask.
在本申请的制作方法中，In the production method of this application,
利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔的步骤包括：The step of using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel includes:
使用固定构件将待加工面板固定在所述真空腔内；Using a fixing member to fix the panel to be processed in the vacuum chamber;
使所述待加工面板与所述第一掩膜版对位；Aligning the panel to be processed with the first mask;
利用所述光源对所述待加工面板进行图案化处理，使所述显示面板的第一区内形成至少一所述第一过孔。The light source is used to pattern the panel to be processed, so that at least one first via hole is formed in the first area of the display panel.
在本申请的制作方法中，In the production method of this application,
所述第一掩膜板包括透光区和遮光区；The first mask includes a light-transmitting area and a light-shielding area;
所述透光区与所述遮光区间隔排列；The light-transmitting area and the light-shielding area are arranged at intervals;
所述透光区与所述第一过孔对应。The light-transmitting area corresponds to the first via hole.
在本申请的制作方法中，In the production method of this application,
所述光源为面激光源或线性激光源中的一种。The light source is one of a surface laser source or a linear laser source.
在本申请的制作方法中，In the production method of this application,
所述第一有机层包括像素定义层和发光层；The first organic layer includes a pixel definition layer and a light emitting layer;
所述第一公共电极层为所述显示面板的阴极层。The first common electrode layer is a cathode layer of the display panel.
在本申请的制作方法中，In the production method of this application,
所述第一过孔贯穿所述发光层及所述像素定义层。The first via hole penetrates the light-emitting layer and the pixel definition layer.
本申请还提出了一种显示面板，其中，所述显示面板通过一种显示面板的制作方法制成，所述显示面板的制作方法包括：This application also proposes a display panel, wherein the display panel is manufactured by a manufacturing method of the display panel, and the manufacturing method of the display panel includes:
提供一衬底，在所述衬底上形成薄膜晶体管层，Providing a substrate, forming a thin film transistor layer on the substrate,
所述薄膜晶体管层包括薄膜晶体管单元及辅助电极；The thin film transistor layer includes a thin film transistor unit and an auxiliary electrode;
在所述薄膜晶体管层上形成第一有机层；Forming a first organic layer on the thin film transistor layer;
利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔，Using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel,
所述第一过孔使部分所述辅助电极裸露；The first via hole exposes a part of the auxiliary electrode;
在所述第一有机层上形成第一公共电极，Forming a first common electrode on the first organic layer,
所述第一公共电极通过所述第一过孔与所述辅助电极电连接。The first common electrode is electrically connected to the auxiliary electrode through the first via hole.
在本申请的显示面板中，所述显示面板包括显示区域；In the display panel of the present application, the display panel includes a display area;
所述显示区域包括位于所述显示区域边缘的所述第一区；The display area includes the first area located at the edge of the display area;
所述辅助电极位于所述第一区内。The auxiliary electrode is located in the first region.
在本申请的显示面板中，In the display panel of this application,
所述辅助电极包括第一电极和第二电极；The auxiliary electrode includes a first electrode and a second electrode;
所述第一电极与所述薄膜晶体管层中的遮光层、有源层或栅极中的一者同层设置；The first electrode and one of the light-shielding layer, the active layer or the gate in the thin film transistor layer are provided in the same layer;
所述第二电极与所述薄膜晶体管层中的源漏极同层设置。The second electrode and the source and drain electrodes in the thin film transistor layer are arranged in the same layer.
在本申请的显示面板中，所述第一装置包括真空腔、位于所述真空腔内的固定构件、光源以及第一掩膜版。In the display panel of the present application, the first device includes a vacuum chamber, a fixing member located in the vacuum chamber, a light source, and a first mask.
在本申请的显示面板中，In the display panel of this application,
利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔的步骤包括：The step of using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel includes:
使用固定构件将待加工面板固定在所述真空腔内；Using a fixing member to fix the panel to be processed in the vacuum chamber;
使所述待加工面板与所述第一掩膜版对位；Aligning the panel to be processed with the first mask;
利用所述光源对所述待加工面板进行图案化处理，使所述显示面板的第一区内形成至少一所述第一过孔。The light source is used to pattern the panel to be processed, so that at least one first via hole is formed in the first area of the display panel.
在本申请的显示面板中，In the display panel of this application,
所述第一掩膜板包括透光区和遮光区；The first mask includes a light-transmitting area and a light-shielding area;
所述透光区与所述遮光区间隔排列；The light-transmitting area and the light-shielding area are arranged at intervals;
所述透光区与所述第一过孔对应。The light-transmitting area corresponds to the first via hole.
在本申请的显示面板中，In the display panel of this application,
所述光源为面激光源或线性激光源中的一种。The light source is one of a surface laser source or a linear laser source.
在本申请的显示面板中，In the display panel of this application,
所述第一有机层包括像素定义层和发光层；The first organic layer includes a pixel definition layer and a light emitting layer;
所述第一公共电极层为所述显示面板的阴极层。The first common electrode layer is a cathode layer of the display panel.
在本申请的显示面板中，In the display panel of this application,
所述第一过孔贯穿所述发光层及所述像素定义层。The first via hole penetrates the light-emitting layer and the pixel definition layer.
有益效果Beneficial effect
本申请利用激光源及特定的掩膜版在去除所述辅助电极上的有机层，使显示面板中的阴极层与辅助电极电连接，提高了阴极层的电位，降低了显示面板中的压降。使用一道光罩去除了辅助电极上的有机层，实现了辅助电极与阴极层的有效导通，提高制程效率。This application uses a laser source and a specific mask to remove the organic layer on the auxiliary electrode, electrically connects the cathode layer in the display panel with the auxiliary electrode, increases the potential of the cathode layer, and reduces the voltage drop in the display panel . A photomask is used to remove the organic layer on the auxiliary electrode, realize the effective conduction between the auxiliary electrode and the cathode layer, and improve the process efficiency.
附图说明Description of the drawings
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to explain the embodiments or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are merely inventions For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.
图1为本申请显示面板的平面结构图；Figure 1 is a plan structure diagram of a display panel of this application;
图2为本申请显示面板制作方法的步骤图；FIG. 2 is a step diagram of the manufacturing method of the display panel of this application;
图3A~3D为本申请显示面板制作方法的工艺步骤图；3A to 3D are process steps diagrams of the manufacturing method of the display panel of this application;
图4为本申请第一装置的结构图；Figure 4 is a structural diagram of the first device of this application;
图5为本申请第一掩膜版的结构图。Figure 5 is a structural diagram of the first mask of the application.
本发明的实施方式Embodiments of the invention
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。The description of the following embodiments refers to the attached drawings to illustrate specific embodiments that can be implemented in this application. The directional terms mentioned in this application, such as [Up], [Down], [Front], [Back], [Left], [Right], [Inner], [Outer], [Side], etc., are for reference only The direction of the additional schema. Therefore, the directional terms used are used to illustrate and understand the application, rather than to limit the application. In the figure, units with similar structures are indicated by the same reference numerals.
请参阅图1，图1为本申请显示面板100的平面结构图。Please refer to FIG. 1, which is a plan structure diagram of the display panel 100 of the present application.
所述显示面板100包括显示区域400和位于所述显示区域400***的非显示区域500。所述显示区域400包括位于所述显示区域400边缘的第一区200和被所述第一区200包围的第二区300。The display panel 100 includes a display area 400 and a non-display area 500 located at the periphery of the display area 400. The display area 400 includes a first area 200 located at the edge of the display area 400 and a second area 300 surrounded by the first area 200.
所述第一区200内设置有辅助电极30。An auxiliary electrode 30 is provided in the first region 200.
所述第二区300内设置有衬底101、位于所述衬底101上的薄膜晶体管层10、及位于所述薄膜晶体管层10上的发光器件层20。The second region 300 is provided with a substrate 101, a thin film transistor layer 10 on the substrate 101, and a light emitting device layer 20 on the thin film transistor layer 10.
所述薄膜晶体管层10包括薄膜晶体管单元11及辅助电极30。The thin film transistor layer 10 includes a thin film transistor unit 11 and an auxiliary electrode 30.
所述薄膜晶体管单元11包括蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型等结构，具体没有限制。本申请以顶栅薄膜晶体管型为例进行说明。The thin film transistor unit 11 includes an etching barrier type, a back channel etching type, or a top gate thin film transistor type structure, which is not specifically limited. This application takes the top-gate thin film transistor type as an example for description.
所述薄膜晶体管单元11包括：遮光层102、缓冲层103、有源层104、栅绝缘层105、栅极106、间绝缘层107、源漏极108、钝化层109及平坦层110。The thin film transistor unit 11 includes a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, a gate 106, an inter-insulating layer 107, a source and drain 108, a passivation layer 109, and a flat layer 110.
请参阅图2，图2为本申请显示面板100制作方法的步骤图。Please refer to FIG. 2, which is a step diagram of a manufacturing method of the display panel 100 of this application.
请参阅图3A~3D，图3A~3D为本申请显示面板100制作方法的工艺步骤图。Please refer to FIGS. 3A to 3D. FIGS. 3A to 3D are process steps diagrams of the manufacturing method of the display panel 100 of this application.
所述显示面板100的制作方法包括：The manufacturing method of the display panel 100 includes:
S10、提供一衬底101，在所述衬底101上形成薄膜晶体管层10；S10, providing a substrate 101, and forming a thin film transistor layer 10 on the substrate 101;
请参阅图3A，步骤S10包括：Please refer to Figure 3A, step S10 includes:
S101、提供一衬底101；S101. Provide a substrate 101;
S102、在所述衬底101上形成第一金属层，经图案化处理使所述第一金属层形成所述薄膜晶体管单元11的遮光层102及所述辅助电极30的第一电极301；S102, forming a first metal layer on the substrate 101, and patterning the first metal layer to form the light shielding layer 102 of the thin film transistor unit 11 and the first electrode 301 of the auxiliary electrode 30;
S103、在所述遮光层102及所述第一电极301上形成缓冲层103；S103, forming a buffer layer 103 on the light shielding layer 102 and the first electrode 301;
S104、在所述缓冲层103上形成所述薄膜晶体管单元11中的有源层104、栅绝缘层105、栅极106、间绝缘层107；S104, forming the active layer 104, the gate insulating layer 105, the gate 106, and the inter-insulating layer 107 in the thin film transistor unit 11 on the buffer layer 103;
S105、使用第一蚀刻工艺，在所述间绝缘层107上形成第二过孔111和第三过孔303；S105, using a first etching process to form a second via 111 and a third via 303 on the inter-insulating layer 107;
S106、在所述间绝缘层107形成第三金属层，经图案化处理使所述第三金属层形成所述薄膜晶体管单元11的源漏极108以及所述辅助电极30的第二电极302。S106, forming a third metal layer on the inter-insulating layer 107, and patterning the third metal layer to form the source and drain 108 of the thin film transistor unit 11 and the second electrode 302 of the auxiliary electrode 30.
在本步骤中，所述第一电极301还可以与所述薄膜晶体管层10中的有源层104或栅极106中的一者同层设置。In this step, the first electrode 301 may also be provided in the same layer as one of the active layer 104 or the gate 106 in the thin film transistor layer 10.
所述第二电极302与所述薄膜晶体管层10中的源漏极108在同一道光罩工艺中形成。The second electrode 302 and the source and drain 108 in the thin film transistor layer 10 are formed in the same photomask process.
S107、在所述源漏极108及所述第二电极302上形成钝化层109和平坦层110。S107, forming a passivation layer 109 and a flat layer 110 on the source and drain 108 and the second electrode 302.
S20、在所述薄膜晶体管层10上形成第一有机层21；S20, forming a first organic layer 21 on the thin film transistor layer 10;
请参阅图3B，步骤S20包括：Please refer to FIG. 3B. Step S20 includes:
S201、在所述平坦层110上形成阳极层201；S201, forming an anode layer 201 on the flat layer 110;
S202、在所述阳极层201上形成像素定义层204；S202, forming a pixel definition layer 204 on the anode layer 201;
S203、在所述像素定义层204上形成发光层202。S203, forming a light-emitting layer 202 on the pixel defining layer 204.
在本申请的显示面板100中，所述第一有机层21包括所述像素定义层204和所述发光层202。In the display panel 100 of the present application, the first organic layer 21 includes the pixel definition layer 204 and the light-emitting layer 202.
S30、利用第一装置600对所述第一有机层21进行图案化处理，使所述显示面板100的第一区200内形成至少一第一过孔304，所述第一过孔304使部分所述辅助电极30裸露；S30. Use the first device 600 to pattern the first organic layer 21, so that at least one first via 304 is formed in the first region 200 of the display panel 100, and the first via 304 is partially The auxiliary electrode 30 is exposed;
请参阅图3C，本步骤主要为利用所述第一装置600去除所述辅助电极30上的所述第一有机层21，使部分所述第一过孔304裸露。Referring to FIG. 3C, this step is mainly to use the first device 600 to remove the first organic layer 21 on the auxiliary electrode 30 so that a part of the first via 304 is exposed.
请参阅图4，图4为本申请第一装置600的结构图。Please refer to FIG. 4, which is a structural diagram of the first device 600 of this application.
所述第一装置600包括真空腔501、位于所述真空腔501内的固定构件、光源502以及第一掩膜版503。The first device 600 includes a vacuum chamber 501, a fixing member located in the vacuum chamber 501, a light source 502 and a first mask 503.
下面将步骤30中命名为待加工面板504进行说明。The following description will name the panel 504 to be processed in step 30.
请参阅图4，步骤S30具体包括：Please refer to Fig. 4, step S30 specifically includes:
S301、使用固定构件将待加工面板504固定在所述真空腔501内；S301: Use a fixing member to fix the panel to be processed 504 in the vacuum chamber 501;
S302、使所述待加工面板504与所述第一掩膜版503对位；S302. Align the panel to be processed 504 with the first mask 503;
S303、利用所述光源502对所述待加工面板504进行图案化处理，使所述显示面板100的第一区400内形成至少一所述第一过孔304。S303. Use the light source 502 to pattern the panel 504 to be processed, so that at least one first via 304 is formed in the first area 400 of the display panel 100.
请参阅图5，图5为本申请第一掩膜版503的结构图。Please refer to FIG. 5, which is a structural diagram of the first mask 503 of this application.
所述第一掩膜板503包括透光区506和遮光区507。The first mask 503 includes a light-transmitting area 506 and a light-shielding area 507.
所述透光区506与所述遮光区507间隔排列。The light-transmitting area 506 and the light-shielding area 507 are arranged at intervals.
所述透光区506与所述第一过孔304对应。The transparent region 506 corresponds to the first via 304.
在一种实施例中，所述光源502为面激光源或线性激光源中的一种。In an embodiment, the light source 502 is one of a surface laser source or a linear laser source.
请参阅图4，所述光源502为面激光源。Please refer to FIG. 4, the light source 502 is a surface laser source.
光源502照射到所述遮光区507时被遮挡无法照射到待加工面板504上。When the light source 502 irradiates the shading area 507, it is blocked and cannot irradiate the panel 504 to be processed.
光源502照射到所述透光区506时，通过所述透光区506内的透光孔照射到所述待加工面板504上，使所述透光孔内对应的第一有机层21中的有机材料加热而升华，露出对应的部分所述第二电极302。When the light source 502 irradiates the light-transmitting area 506, it irradiates the panel 504 to be processed through the light-transmitting hole in the light-transmitting area 506, so that the The organic material is heated and sublimated, exposing the corresponding part of the second electrode 302.
当所述光源502为线激光源时，所述线激光源可以匀速的在所述待加工面板504下方移动，使得所述第一有机层21能够被光源502均匀的加热。When the light source 502 is a line laser source, the line laser source can move under the panel 504 to be processed at a uniform speed, so that the first organic layer 21 can be uniformly heated by the light source 502.
所述第一装置600还包括冷却构件505。所述冷却构件505以防止所述待加工面板504因过热而导致内部的膜层结构不可逆的损坏。The first device 600 further includes a cooling member 505. The cooling member 505 prevents irreversible damage to the internal film structure of the panel 504 to be processed due to overheating.
S40、在所述第一有机层21上形成第一公共电极203；S40, forming a first common electrode 203 on the first organic layer 21;
请参阅图3D，将完成步骤S30的面板从所述真空腔501内取出，进行所述第一公共电极203的制备。Referring to FIG. 3D, the panel after step S30 is taken out from the vacuum chamber 501, and the first common electrode 203 is prepared.
所述第一公共电极203为所述发光器件层20的阴极层。所述第一公共电极203通过所述第一过孔304与所述辅助电极30电连接。The first common electrode 203 is the cathode layer of the light emitting device layer 20. The first common electrode 203 is electrically connected to the auxiliary electrode 30 through the first via 304.
本申请还提出了一种显示面板，所述显示面板采用上述制作方法制成。The application also proposes a display panel, which is manufactured by the above-mentioned manufacturing method.
本申请提出了一种显示面板及制作方法，所述制作方法包括提供一衬底，在所述衬底上形成薄膜晶体管层，所述薄膜晶体管层包括薄膜晶体管单元及辅助电极；在所述薄膜晶体管层上形成第一有机层；利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔；在所述第一有机层上形成第一公共电极。本申请利用激光源及特定的掩膜版在去除所述辅助电极上的有机层，使显示面板中的阴极层与辅助电极电连接，提高了阴极层的电位，降低了显示面板中的压降。使用一道光罩去除了辅助电极上的有机层，实现了辅助电极与阴极层的有效导通，提高制程效率。This application provides a display panel and a manufacturing method. The manufacturing method includes providing a substrate, forming a thin film transistor layer on the substrate, the thin film transistor layer including a thin film transistor unit and an auxiliary electrode; A first organic layer is formed on the transistor layer; the first organic layer is patterned by a first device so that at least one first via is formed in the first area of the display panel; in the first organic layer A first common electrode is formed thereon. This application uses a laser source and a specific mask to remove the organic layer on the auxiliary electrode, electrically connects the cathode layer in the display panel with the auxiliary electrode, increases the potential of the cathode layer, and reduces the voltage drop in the display panel . A photomask is used to remove the organic layer on the auxiliary electrode, realize the effective conduction between the auxiliary electrode and the cathode layer, and improve the process efficiency.
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。In summary, although the application has been disclosed as above in preferred embodiments, the above-mentioned preferred embodiments are not intended to limit the application, and those of ordinary skill in the art can make various decisions without departing from the spirit and scope of the application. Such changes and modifications, so the protection scope of this application is subject to the scope defined by the claims.

Claims (18)

  1. 一种显示面板的制作方法，其包括：A manufacturing method of a display panel, which includes:
    提供一衬底，在所述衬底上形成薄膜晶体管层，Providing a substrate, forming a thin film transistor layer on the substrate,
    所述薄膜晶体管层包括薄膜晶体管单元及辅助电极；The thin film transistor layer includes a thin film transistor unit and an auxiliary electrode;
    在所述薄膜晶体管层上形成第一有机层；Forming a first organic layer on the thin film transistor layer;
    利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔，Using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel,
    所述第一过孔使部分所述辅助电极裸露；The first via hole exposes a part of the auxiliary electrode;
    在所述第一有机层上形成第一公共电极，Forming a first common electrode on the first organic layer,
    所述第一公共电极通过所述第一过孔与所述辅助电极电连接。The first common electrode is electrically connected to the auxiliary electrode through the first via hole.
  2. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述显示面板包括显示区域；The display panel includes a display area;
    所述显示区域包括位于所述显示区域边缘的所述第一区；The display area includes the first area located at the edge of the display area;
    所述辅助电极位于所述第一区内。The auxiliary electrode is located in the first region.
  3. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述辅助电极包括第一电极和第二电极；The auxiliary electrode includes a first electrode and a second electrode;
    所述第一电极与所述薄膜晶体管层中的遮光层、有源层或栅极中的一者同层设置；The first electrode and one of the light-shielding layer, the active layer or the gate in the thin film transistor layer are provided in the same layer;
    所述第二电极与所述薄膜晶体管层中的源漏极同层设置。The second electrode and the source and drain electrodes in the thin film transistor layer are arranged in the same layer.
  4. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述第一装置包括真空腔、位于所述真空腔内的固定构件、光源以及第一掩膜版。The first device includes a vacuum chamber, a fixing member located in the vacuum chamber, a light source, and a first mask.
  5. 根据权利要求4所述的制作方法，其中，The manufacturing method according to claim 4, wherein:
    利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔的步骤包括：The step of using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel includes:
    使用固定构件将待加工面板固定在所述真空腔内；Using a fixing member to fix the panel to be processed in the vacuum chamber;
    使所述待加工面板与所述第一掩膜版对位；Aligning the panel to be processed with the first mask;
    利用所述光源对所述待加工面板进行图案化处理，使所述显示面板的第一区内形成至少一所述第一过孔。The light source is used to pattern the panel to be processed, so that at least one first via hole is formed in the first area of the display panel.
  6. 根据权利要求4所述的制作方法，其中，The manufacturing method according to claim 4, wherein:
    所述第一掩膜板包括透光区和遮光区；The first mask includes a light-transmitting area and a light-shielding area;
    所述透光区与所述遮光区间隔排列；The light-transmitting area and the light-shielding area are arranged at intervals;
    所述透光区与所述第一过孔对应。The light-transmitting area corresponds to the first via hole.
  7. 根据权利要求4所述的制作方法，其中，The manufacturing method according to claim 4, wherein:
    所述光源为面激光源或线性激光源中的一种。The light source is one of a surface laser source or a linear laser source.
  8. 根据权利要求1所述的制作方法，其中，The manufacturing method according to claim 1, wherein:
    所述第一有机层包括像素定义层和发光层；The first organic layer includes a pixel definition layer and a light emitting layer;
    所述第一公共电极层为所述显示面板的阴极层。The first common electrode layer is a cathode layer of the display panel.
  9. 根据权利要求8所述的制作方法，其中，The manufacturing method according to claim 8, wherein:
    所述第一过孔贯穿所述发光层及所述像素定义层。The first via hole penetrates the light-emitting layer and the pixel definition layer.
  10. 一种显示面板，其中，所述显示面板通过一种显示面板的制作方法制成，所述显示面板的制作方法包括：A display panel, wherein the display panel is manufactured by a manufacturing method of the display panel, and the manufacturing method of the display panel includes:
    提供一衬底，在所述衬底上形成薄膜晶体管层，Providing a substrate, forming a thin film transistor layer on the substrate,
    所述薄膜晶体管层包括薄膜晶体管单元及辅助电极；The thin film transistor layer includes a thin film transistor unit and an auxiliary electrode;
    在所述薄膜晶体管层上形成第一有机层；Forming a first organic layer on the thin film transistor layer;
    利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔，Using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel,
    所述第一过孔使部分所述辅助电极裸露；The first via hole exposes a part of the auxiliary electrode;
    在所述第一有机层上形成第一公共电极，Forming a first common electrode on the first organic layer,
    所述第一公共电极通过所述第一过孔与所述辅助电极电连接。The first common electrode is electrically connected to the auxiliary electrode through the first via hole.
  11. 根据权利要求10所述的显示面板，其中，The display panel according to claim 10, wherein:
    所述显示面板包括显示区域；The display panel includes a display area;
    所述显示区域包括位于所述显示区域边缘的所述第一区；The display area includes the first area located at the edge of the display area;
    所述辅助电极位于所述第一区内。The auxiliary electrode is located in the first region.
  12. 根据权利要求10所述的显示面板，其中，The display panel according to claim 10, wherein:
    所述辅助电极包括第一电极和第二电极；The auxiliary electrode includes a first electrode and a second electrode;
    所述第一电极与所述薄膜晶体管层中的遮光层、有源层或栅极中的一者同层设置；The first electrode and one of the light-shielding layer, the active layer or the gate in the thin film transistor layer are provided in the same layer;
    所述第二电极与所述薄膜晶体管层中的源漏极同层设置。The second electrode and the source and drain electrodes in the thin film transistor layer are arranged in the same layer.
  13. 根据权利要求10所述的显示面板，其中，The display panel according to claim 10, wherein:
    所述第一装置包括真空腔、位于所述真空腔内的固定构件、光源以及第一掩膜版。The first device includes a vacuum chamber, a fixing member located in the vacuum chamber, a light source, and a first mask.
  14. 根据权利要求13所述的显示面板，其中，The display panel according to claim 13, wherein:
    利用第一装置对所述第一有机层进行图案化处理，使所述显示面板的第一区内形成至少一第一过孔的步骤包括：The step of using a first device to pattern the first organic layer to form at least one first via hole in the first area of the display panel includes:
    使用固定构件将待加工面板固定在所述真空腔内；Using a fixing member to fix the panel to be processed in the vacuum chamber;
    使所述待加工面板与所述第一掩膜版对位；Aligning the panel to be processed with the first mask;
    利用所述光源对所述待加工面板进行图案化处理，使所述显示面板的第一区内形成至少一所述第一过孔。The light source is used to pattern the panel to be processed, so that at least one first via hole is formed in the first area of the display panel.
  15. 根据权利要求13所述的显示面板，其中，The display panel according to claim 13, wherein:
    所述第一掩膜板包括透光区和遮光区；The first mask includes a light-transmitting area and a light-shielding area;
    所述透光区与所述遮光区间隔排列；The light-transmitting area and the light-shielding area are arranged at intervals;
    所述透光区与所述第一过孔对应。The light-transmitting area corresponds to the first via hole.
  16. 根据权利要求13所述的显示面板，其中，The display panel according to claim 13, wherein:
    所述光源为面激光源或线性激光源中的一种。The light source is one of a surface laser source or a linear laser source.
  17. 根据权利要求10所述的显示面板，其中，The display panel according to claim 10, wherein:
    所述第一有机层包括像素定义层和发光层；The first organic layer includes a pixel definition layer and a light emitting layer;
    所述第一公共电极层为所述显示面板的阴极层。The first common electrode layer is a cathode layer of the display panel.
  18. 根据权利要求17所述的显示面板，其中，The display panel of claim 17, wherein:
    所述第一过孔贯穿所述发光层及所述像素定义层。The first via hole penetrates the light-emitting layer and the pixel definition layer.
PCT/CN2019/104610 2019-05-14 2019-09-06 Display panel and manufacturing method WO2020228195A1 (en)

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