WO2020206773A1 - Organic light emitting diode device and manufacturing method therefor - Google Patents

Organic light emitting diode device and manufacturing method therefor Download PDF

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Publication number
WO2020206773A1
WO2020206773A1 PCT/CN2019/085532 CN2019085532W WO2020206773A1 WO 2020206773 A1 WO2020206773 A1 WO 2020206773A1 CN 2019085532 W CN2019085532 W CN 2019085532W WO 2020206773 A1 WO2020206773 A1 WO 2020206773A1
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layer
light emitting
manufacturing
glass substrate
cover plate
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PCT/CN2019/085532
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French (fr)
Chinese (zh)
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魏锋
李金川
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020206773A1 publication Critical patent/WO2020206773A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the field of display, in particular to an organic light emitting diode device and a manufacturing method thereof.
  • Organic light emitting diode devices (Organic Light Emitting Diode, OLED) are also called organic electroluminescent displays and organic light emitting semiconductors. Because of its self-luminous, infinitely high contrast ratio, wide viewing angle, low power consumption, extremely fast response, and flexible display, it has been regarded as a new generation of display technology since its discovery.
  • QD-OLED takes into account the bright and vivid quantum dots, the independent light-emitting and ultra-thin design of OLEDs.
  • the industry is currently in the research and development stage. In the future, it will have the opportunity to emerge in the display terminal market.
  • QD-OLED is more like a combination of quantum dots and OLED. It uses blue OLED as the light source, and a layer of quantum dot QD film is placed on the upper layer. The corresponding blue pixels will directly transmit blue light, while the red and green pixels are actually red and green pixels. Green quantum dots, after receiving blue light, will excite red and green light. So as to achieve full color.
  • the QD-OLED screen device is composed of a glass substrate and a glass cover.
  • the glass substrate is formed with a thin film transistor layer and an OLED blue light emitting layer.
  • the glass cover is formed with a color filter, a quantum red light emitting layer, and a quantum green light emitting layer.
  • the glass substrate and the glass cover plate need to be precisely aligned and packaged to ensure that the effective pixels of the quantum light-emitting layer meet the needs of backlighting. Due to the box distance between the glass substrate and the glass cover plate, adjacent pixels are required during QD-OLED screen operation. Prone to light leakage problems.
  • the purpose of the present invention is to provide an organic light-emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and installing an optical isolation layer to block light. problem.
  • an embodiment of the present invention provides an organic light emitting diode device, which includes a glass substrate, a glass cover plate arranged opposite to the glass substrate, and a sealant layer.
  • a glass substrate On the upper surface of the glass substrate, an array substrate layer, an electroluminescent layer, and a first thin film encapsulation layer are sequentially stacked; a glass cover plate is arranged opposite to the glass substrate, and a colored glass cover is sequentially stacked on the lower surface of the glass cover plate.
  • the sealant layer is located between the glass substrate and the glass cover plate and is distributed around the glass substrate and the glass cover plate for Connect and seal the glass substrate and the glass cover;
  • the color filter includes a black photoresist layer, a red and green color filter layer, and a first planarization layer; wherein, the light isolation layer and the The black photoresist layers are arranged opposite to each other, and are used to block the light emitted by the electroluminescent layer to prevent light leakage.
  • the organic light-emitting diode device further includes a filling layer located inside the sealant layer for filling and connecting the glass substrate and the glass cover plate.
  • the quantum light-emitting layer includes a black matrix layer, a red and green quantum dot film layer, and a second planarization layer in order from bottom to top; the light isolation layer is arranged opposite to the black matrix layer; the electroluminescence
  • the layers include a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer and a cathode layer in order from bottom to top.
  • a desiccant layer is further included between the sealant layer and the filling layer.
  • the color filter and the quantum light emitting layer further include a second light adjustment layer and a second thin film encapsulation layer.
  • the step of manufacturing a glass substrate includes providing a glass substrate, and sequentially fabricating an array substrate layer, an electroluminescence layer, and a first thin film packaging layer on the upper surface of the glass substrate;
  • the step of manufacturing a glass cover plate is to provide a glass cover plate, on the lower surface of the glass cover plate, a color filter, a quantum light-emitting layer, an optical modulation layer and an optical isolation layer are sequentially manufactured; the thickness of the color filter is less than 3.5um; the thickness of the quantum light-emitting layer is less than 10um;
  • a filling layer is used to fill between the glass substrate and the glass cover plate, and the first film packaging layer and the filling layer are arranged opposite to each other, so that the glass substrate and the glass cover plate Connected through the filling layer; a sealant layer is used for sealing and connecting around the glass substrate and the glass cover, wherein the sealant layer is located outside the filling layer.
  • the step of manufacturing the glass substrate structure specifically includes:
  • the step of preparing the array substrate layer is to provide a glass substrate on which the array substrate layer is formed layer by layer through sputtering film formation, organic chemical film formation, exposure, development and etching processes;
  • the step of preparing an electroluminescent layer is to use a mask evaporation process to sequentially form a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and an electron injection layer on the array substrate layer from bottom to top.
  • the cathode layer is used as an electroluminescent layer; the thickness of the electroluminescent layer is in the range of 400-600nm; the cathode layer is a top emission cathode, and the material is any one of ITO, IZO, Mg or Ag;
  • the step of making a first thin-film encapsulation layer is to use chemical vapor deposition to make a first thin-film encapsulation layer, the first thin-film encapsulation layer is a SiO ⁇ SiOC ⁇ SiON single layer or a combination of multiple layers, and the first thin-film encapsulation layer is The thickness range is 500-800nm.
  • the manufacturing of the color filter in the step of manufacturing the glass cover specifically includes: sequentially manufacturing a black photoresist layer, a red and green color filter layer, and a first planarization layer on the lower surface of the glass cover.
  • the black photoresist layer, the red and green color filter layer and the first planarization layer constitute the color filter, and the thickness of the color filter is less than 3.5um.
  • the step of making a glass cover plate further includes the step of making a second light adjustment layer and a second thin film encapsulation layer, which is to make the second light between the color filter and the quantum light emitting layer.
  • An adjustment layer and the second film encapsulation layer are to make the second light between the color filter and the quantum light emitting layer.
  • the step of packaging into a box further includes the step of making a desiccant layer, which is to provide a desiccant as a desiccant layer between the sealant layer and the filling layer, and the desiccant layer is The glue layer is arranged relatively.
  • the advantage of the present invention is to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and setting the optical isolation layer to block light. problem.
  • FIG. 1 is a schematic diagram of the structure of an organic light emitting diode device in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of the electroluminescent layer in FIG. 1;
  • FIG. 3 is a schematic diagram of the structure of an organic light emitting diode device in another embodiment of the present invention.
  • FIG. 4 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the invention.
  • FIG. 5 is a manufacturing flow chart of the steps of manufacturing the glass substrate in FIG. 4;
  • FIG. 6 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the present invention, in which the steps of manufacturing a second light adjustment layer and a second thin film encapsulation layer are added to the manufacturing process shown in FIG. 4;
  • FIG. 7 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the present invention, in which a step of manufacturing a desiccant layer is added to the manufacturing process shown in FIG. 6.
  • the "above” or “below” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • an embodiment of the present invention provides an organic light emitting diode device 1, including a glass substrate 10, a glass cover 20 disposed opposite to the glass substrate 10, and a sealant layer 30.
  • the sealant layer 30 is located between the glass substrate 10 and the glass cover plate 20 and distributed around, and is used to connect and seal the glass substrate 10 and the glass cover plate 20.
  • an array substrate layer 11, an electroluminescent layer 12, and a first thin film encapsulation layer 13 are sequentially stacked; on the lower surface of the glass cover plate 20, a color filter 21, The quantum light emitting layer 22, the optical modulation layer 23, and the light isolation layer 24.
  • the organic light-emitting diode device 1 further includes a filling layer 25 located inside the sealant layer 30 for filling and connecting the glass substrate 10 and the glass cover 20, especially To fill the gap between the glass substrate 10 and the glass cover 20.
  • the color filter 21 includes a black photoresist layer 211, a red and green color filter layer 212, and a first planarization layer 213; wherein, the light isolation layer 24 is disposed opposite to the black photoresist layer 211 for The light emitted by the electroluminescent layer 12 is blocked to prevent light leakage.
  • the sealant layer 30 is preferably a UV glue layer.
  • the quantum light-emitting layer 22 includes a black matrix layer 221, a red and green quantum dot film layer 222, and a second planarization layer 223; the optical isolation layer 24 is arranged opposite to the black matrix layer.
  • the array substrate layer 11 includes a thin film transistor layer, a pixel definition layer, and an anode layer in order from bottom to top. This structure is a prior art, and will not be described here.
  • the electroluminescent layer 12 includes a hole injection layer 121, a hole transport layer 122, an organic light emitting layer 123, an electron transport layer 124, an electron injection layer 125, and a cathode layer 126 from bottom to top. .
  • a desiccant layer 31 is further included between the sealant layer 30 and the filling layer 25.
  • the color filter 21 and the quantum light emitting layer 22 further include a second light adjustment layer 26 and a second thin film encapsulation layer 27.
  • the present invention provides a manufacturing method of an organic light emitting diode.
  • the manufacturing method includes steps S1-S3.
  • the step S1 of manufacturing the glass substrate 10 is to provide a glass substrate 10, and sequentially fabricate the array substrate layer 11, the electroluminescent layer 12 and the first thin film encapsulation layer 13 on the upper surface of the glass substrate 10 from bottom to top.
  • Step S2 of manufacturing the glass cover plate 20 specifically, providing a glass cover plate 20, on which the color filter 21, the quantum light emitting layer 22, the optical modulation layer 23 and the light isolation layer 24 are sequentially manufactured on the glass cover plate 20 from bottom to top;
  • the thickness of the color filter 21 is less than 3.5 um; the thickness of the quantum light-emitting layer 22 is less than 10 um.
  • the packaging into a box step S3, specifically, using a filling layer 25 to fill and connect the glass substrate 10 and the glass cover plate 20, and use a sealant layer 30 around the glass substrate 10 and the glass cover plate 20 opposite to each other. Seal and connect.
  • the first film encapsulation layer 13 and the filling layer 25 are arranged opposite to each other, and the sealant layer 30 is located outside the filling layer 25.
  • the step S1 of manufacturing the glass substrate specifically includes:
  • Step S11 of preparing the array substrate layer specifically, providing a glass substrate 10, and forming the array substrate layer 11 layer by layer on the upper surface of the glass substrate 10 through sputtering film formation, organic chemical film formation, exposure, development and etching processes.
  • the array substrate layer 11 includes a thin film transistor layer, a pixel definition layer, and an anode layer in order from bottom to top;
  • Step S12 of preparing an electroluminescent layer specifically, a hole injection layer 121, a hole transport layer 122, and an organic light emitting layer are sequentially formed on the array substrate layer 11 using an Open MASK process from bottom to top 123.
  • the electron transport layer 124, the electron injection layer 125 and the cathode layer 126 serve as the electroluminescent layer 12; the thickness of the electroluminescent layer 12 ranges from 400 to 600nm; the cathode layer 126 is a top emission cathode, and the material is used Any one of ITO, IZO, Mg or Ag; among them, inkjet printing and mask evaporation can also be used to make the electroluminescent layer 12, and the electroluminescent layer 12 is made of B ⁇ BB ⁇ BBB Single layer or tandem multilayer structure;
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the step of manufacturing the color filter 21 specifically includes: sequentially manufacturing a black photoresist layer, a red and green color filter layer, and a first planarization layer on the glass cover 20 from bottom to top,
  • the black photoresist layer, the red and green color filter layer and the first planarization layer constitute a color filter 21.
  • the step of fabricating the quantum light emitting layer 22 specifically includes: sequentially fabricating a black matrix layer 221, a red and green quantum dot film layer 222, and a second planarization layer 223 on the lower surface of the color filter 21
  • the black matrix layer, the red and green quantum dot film layer, and the second planarization layer constitute the quantum light emitting layer 22.
  • the step S2 of making the glass cover plate 20 further includes the step S21 of making the second light adjustment layer 26 and the second thin film encapsulation layer 27, specifically, the color filter
  • the second light adjustment layer 26 and the second thin film encapsulation layer 27 are formed between 21 and the quantum light emitting layer 22.
  • the packaging and forming step S3 also includes the step S31 of making a desiccant layer.
  • a desiccant is disposed between the sealant layer 30 and the filling layer 25 as the desiccant layer 31.
  • the desiccant layer 31 is disposed opposite to the sealant layer 30.
  • the desiccant is preferably Getter desiccant.
  • the advantage of the present invention is to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and setting the optical isolation layer to block light. problem.

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Abstract

An organic light emitting diode device and a manufacturing method therefor. The organic light emitting diode device comprises a glass substrate (10), a glass cover plate (20), and sealant layers (30), and the upper surface of the glass substrate (10) sequentially comprises an array substrate layer (11), an electroluminescent layer (12), and a first thin film encapsulation layer (13); the lower surface of the glass cover plate (20) sequentially comprises a color filter (21), a quantum light emitting layer (22), an optical modulation layer (23), and an optical isolation layer (24); the optical isolation layer (24) is arranged opposite to a black light blocking layer (211) of the color filter (21) and is configured to block light emitted by the electroluminescent layer (12) from leakage. The manufacturing method for the organic light emitting diode device comprises the steps of manufacturing the glass substrate (10), manufacturing the glass cover plate (20), and performing encapsulation as a cell. By reducing the cell distance between the glass substrate (10) and the glass cover plate (20) and providing the optical isolation layer (24) for light blocking, problems such as device light leakage caused by cell thickness are solved.

Description

有机发光二极管器件及其制作方法Organic light emitting diode device and manufacturing method thereof 技术领域Technical field
本发明涉及显示领域，尤其涉及一种有机发光二极管器件及其制作方法。The invention relates to the field of display, in particular to an organic light emitting diode device and a manufacturing method thereof.
背景技术Background technique
有机发光二极管器件(Organic Light Emitting Diode，OLED)又称有机电致发光显示器、有机发光半导体。因其具有自发光、无穷高对比度、宽视角、低功耗、响应速度极快、可实现柔性显示等特性，自从发现之后就被视为新一代显示技术。Organic light emitting diode devices (Organic Light Emitting Diode, OLED) are also called organic electroluminescent displays and organic light emitting semiconductors. Because of its self-luminous, infinitely high contrast ratio, wide viewing angle, low power consumption, extremely fast response, and flexible display, it has been regarded as a new generation of display technology since its discovery.
QD-OLED兼顾量子点的明亮鲜艳，OLED的自主发光与超薄设计等特性，行业内目前均处于研发阶段，未来在显示终端市场的应用，有机会崭露头角。QD-OLED更像是量子点与OLED的结合体，利用蓝色OLED作为光源，上层放置一层量子点QD薄膜，相应的蓝色像素会直接透过蓝光，而红色和绿色像素其实是红色和绿色量子点，在接受到蓝光之后，会激发出红光和绿光。从而实现全彩色。QD-OLED takes into account the bright and vivid quantum dots, the independent light-emitting and ultra-thin design of OLEDs. The industry is currently in the research and development stage. In the future, it will have the opportunity to emerge in the display terminal market. QD-OLED is more like a combination of quantum dots and OLED. It uses blue OLED as the light source, and a layer of quantum dot QD film is placed on the upper layer. The corresponding blue pixels will directly transmit blue light, while the red and green pixels are actually red and green pixels. Green quantum dots, after receiving blue light, will excite red and green light. So as to achieve full color.
QD-OLED屏幕器件由玻璃基板与玻璃盖板组成，玻璃基板上形成有薄膜晶体管层、OLED蓝光发光层，玻璃盖板上形成有彩色滤光片、量子红光发光层、量子绿光发光层等器件层；玻璃基板与玻璃盖板需精准对位贴合封装，保证量子发光层有效像素满足背光需求，由于玻璃基板和玻璃盖板存在盒距，QD-OLED屏幕工作过程中，相邻像素容易出现漏光问题。The QD-OLED screen device is composed of a glass substrate and a glass cover. The glass substrate is formed with a thin film transistor layer and an OLED blue light emitting layer. The glass cover is formed with a color filter, a quantum red light emitting layer, and a quantum green light emitting layer The glass substrate and the glass cover plate need to be precisely aligned and packaged to ensure that the effective pixels of the quantum light-emitting layer meet the needs of backlighting. Due to the box distance between the glass substrate and the glass cover plate, adjacent pixels are required during QD-OLED screen operation. Prone to light leakage problems.
技术问题technical problem
本发明的目的在于，提供一种有机发光二极管器件及其制作方法，可通过减小玻璃基板和玻璃盖板之间的盒距及设置光隔离层挡光，解决因为盒厚引起的器件漏光等问题。The purpose of the present invention is to provide an organic light-emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and installing an optical isolation layer to block light. problem.
技术解决方案Technical solutions
为了解决上述问题，本发明一实施例中提供一种有机发光二极管器件，包括玻璃基板、与所述玻璃基板相对设置的玻璃盖板以及密封胶层。在所述玻璃基板的上表面依次堆叠有阵列基板层、电致发光层和第一薄膜封装层；玻璃盖板与所述玻璃基板相对设置，在所述玻璃盖板的下表面依次堆叠有彩色滤光片、量子发光层、光学调制层和光隔离层；密封胶层位于所述玻璃基板和所述玻璃盖板之间并分布于位于所述玻璃基板和所述玻璃盖板的周围，用于连接并密封所述玻璃基板和所述玻璃盖板；其中，所述彩色滤光片包括黑色光阻层、红绿彩色滤光层和第一平坦化层；其中，所述光隔离层与所述黑色光阻层相对设置，用于阻挡所述电致发光层发出的光线防止漏光。In order to solve the above problems, an embodiment of the present invention provides an organic light emitting diode device, which includes a glass substrate, a glass cover plate arranged opposite to the glass substrate, and a sealant layer. On the upper surface of the glass substrate, an array substrate layer, an electroluminescent layer, and a first thin film encapsulation layer are sequentially stacked; a glass cover plate is arranged opposite to the glass substrate, and a colored glass cover is sequentially stacked on the lower surface of the glass cover plate. Filter, quantum light emitting layer, optical modulation layer and light isolation layer; the sealant layer is located between the glass substrate and the glass cover plate and is distributed around the glass substrate and the glass cover plate for Connect and seal the glass substrate and the glass cover; wherein, the color filter includes a black photoresist layer, a red and green color filter layer, and a first planarization layer; wherein, the light isolation layer and the The black photoresist layers are arranged opposite to each other, and are used to block the light emitted by the electroluminescent layer to prevent light leakage.
进一步的，其中所述有机发光二极管器件还包括有填充层，位于所述密封胶层的内侧，用来填充并连接所述玻璃基板和所述玻璃盖板。Further, the organic light-emitting diode device further includes a filling layer located inside the sealant layer for filling and connecting the glass substrate and the glass cover plate.
进一步的，其中所述量子发光层从下至上依次包括黑色矩阵层、红绿量子点膜层和第二平坦化层；所述光隔离层与所述黑色矩阵层相对设置；所述电致发光层从下至上依次包括空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和阴极层。Further, the quantum light-emitting layer includes a black matrix layer, a red and green quantum dot film layer, and a second planarization layer in order from bottom to top; the light isolation layer is arranged opposite to the black matrix layer; the electroluminescence The layers include a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer and a cathode layer in order from bottom to top.
进一步的，其中所述密封胶层和所述填充层之间还包括干燥剂层。Further, a desiccant layer is further included between the sealant layer and the filling layer.
进一步的，其中所述彩色滤光片和所述量子发光层之间还包括第二光调节层及第二薄膜封装层。Further, wherein the color filter and the quantum light emitting layer further include a second light adjustment layer and a second thin film encapsulation layer.
本发明又一实施例中提供一种有机发光二极管的制作方法，包括步骤：In another embodiment of the present invention, there is provided a manufacturing method of an organic light emitting diode, which includes the steps:
制作玻璃基板步骤，其为提供一玻璃基板，在所述玻璃基板的上表面依次制作阵列基板层、电致发光层和第一薄膜封装层；The step of manufacturing a glass substrate includes providing a glass substrate, and sequentially fabricating an array substrate layer, an electroluminescence layer, and a first thin film packaging layer on the upper surface of the glass substrate;
制作玻璃盖板步骤，其为提供一玻璃盖板，在所述玻璃盖板的下表面依次制作彩色滤光片、量子发光层、光学调制层和光隔离层；所述彩色滤光片的厚度小于3.5um；所述量子发光层的厚度小于10um；The step of manufacturing a glass cover plate is to provide a glass cover plate, on the lower surface of the glass cover plate, a color filter, a quantum light-emitting layer, an optical modulation layer and an optical isolation layer are sequentially manufactured; the thickness of the color filter is less than 3.5um; the thickness of the quantum light-emitting layer is less than 10um;
封装成盒步骤，利用填充层填充于所述玻璃基板和所述玻璃盖板之间，并且所述第一薄膜封装层和所述填充层相对设置，使所述玻璃基板和所述玻璃盖板通过所述填充层连接；在所述玻璃基板和玻璃盖板的周围使用密封胶层进行密封和连接，其中所述密封胶层位于所述填充层的外侧。In the step of packaging into a box, a filling layer is used to fill between the glass substrate and the glass cover plate, and the first film packaging layer and the filling layer are arranged opposite to each other, so that the glass substrate and the glass cover plate Connected through the filling layer; a sealant layer is used for sealing and connecting around the glass substrate and the glass cover, wherein the sealant layer is located outside the filling layer.
进一步的，其中所述制作玻璃基板结构步骤具体包括：Further, the step of manufacturing the glass substrate structure specifically includes:
制作阵列基板层步骤，其为提供一玻璃基板，在所述玻璃基板上通过溅射成膜、有机化学成膜、曝光、显影和刻蚀工艺逐层形成阵列基板层；The step of preparing the array substrate layer is to provide a glass substrate on which the array substrate layer is formed layer by layer through sputtering film formation, organic chemical film formation, exposure, development and etching processes;
制作电致发光层步骤，其为在所述阵列基板层上采用掩膜板蒸镀工艺从下至上依次制作空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和阴极层作为电致发光层；所述电致发光层的厚度范围为400-600nm；所述阴极层为顶发射方式阴极，材料采用ITO、IZO、Mg或Ag中的任一种；The step of preparing an electroluminescent layer is to use a mask evaporation process to sequentially form a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and an electron injection layer on the array substrate layer from bottom to top. The cathode layer is used as an electroluminescent layer; the thickness of the electroluminescent layer is in the range of 400-600nm; the cathode layer is a top emission cathode, and the material is any one of ITO, IZO, Mg or Ag;
制作第一薄膜封装层步骤，其为采用化学气相沉积制作第一薄膜封装层，所述第一薄膜封装层为SiO\SiOC\SiON单层或多层膜组合，所述第一薄膜封装层的厚度范围为500-800nm。The step of making a first thin-film encapsulation layer is to use chemical vapor deposition to make a first thin-film encapsulation layer, the first thin-film encapsulation layer is a SiO\SiOC\SiON single layer or a combination of multiple layers, and the first thin-film encapsulation layer is The thickness range is 500-800nm.
进一步的，其中所述制作玻璃盖板步骤中的所述制作彩色滤光片具体包括：在所述玻璃盖板的下表面依次制作黑色光阻层、红绿彩色滤光层和第一平坦化层，所述黑色光阻层、所述红绿彩色滤光层和所述第一平坦化层构成所述彩色滤光片，所述彩色滤光片的厚度小于3.5um。Further, the manufacturing of the color filter in the step of manufacturing the glass cover specifically includes: sequentially manufacturing a black photoresist layer, a red and green color filter layer, and a first planarization layer on the lower surface of the glass cover. The black photoresist layer, the red and green color filter layer and the first planarization layer constitute the color filter, and the thickness of the color filter is less than 3.5um.
进一步的，其中所述制作玻璃盖板步骤还包括制作第二光调节层及第二薄膜封装层步骤，其为在所述彩色滤光片与所述量子发光层之间制作所述第二光调节层及所述第二薄膜封装层。Further, the step of making a glass cover plate further includes the step of making a second light adjustment layer and a second thin film encapsulation layer, which is to make the second light between the color filter and the quantum light emitting layer. An adjustment layer and the second film encapsulation layer.
进一步的，其中所述封装成盒步骤还包括制作干燥剂层步骤，其为在所述密封胶层和所述填充层之间设置干燥剂作为干燥剂层，所述干燥剂层与所述密封胶层相对设置。Further, the step of packaging into a box further includes the step of making a desiccant layer, which is to provide a desiccant as a desiccant layer between the sealant layer and the filling layer, and the desiccant layer is The glue layer is arranged relatively.
有益效果Beneficial effect
本发明的优点在于，提供一种有机发光二极管器件及其制作方法，可通过减小玻璃基板和玻璃盖板之间的盒距及设置光隔离层挡光，解决因为盒厚引起的器件漏光等问题。The advantage of the present invention is to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and setting the optical isolation layer to block light. problem.
附图说明Description of the drawings
图1为本发明一实施例中有机发光二极管器件的结构示意图；FIG. 1 is a schematic diagram of the structure of an organic light emitting diode device in an embodiment of the present invention;
图2为图1中所述电致发光层的结构示意图；FIG. 2 is a schematic diagram of the structure of the electroluminescent layer in FIG. 1;
图3为本发明另一实施例中有机发光二极管器件的结构示意图；3 is a schematic diagram of the structure of an organic light emitting diode device in another embodiment of the present invention;
图4为本发明一实施例中有机发光二极管器件的制作流程图；4 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the invention;
图5为图4中制作玻璃基板步骤的制作流程图；FIG. 5 is a manufacturing flow chart of the steps of manufacturing the glass substrate in FIG. 4;
图6为本发明一实施例中有机发光二极管器件的制作流程图，其中在图4所示的制作流程中增加制作第二光调节层及第二薄膜封装层的步骤；6 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the present invention, in which the steps of manufacturing a second light adjustment layer and a second thin film encapsulation layer are added to the manufacturing process shown in FIG. 4;
图7为本发明一实施例中有机发光二极管器件的制作流程图，其中在图6所示的制作流程中增加制作干燥剂层的步骤。FIG. 7 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the present invention, in which a step of manufacturing a desiccant layer is added to the manufacturing process shown in FIG. 6.
图中部件标识如下：The components in the figure are identified as follows:
1有机发光二极管器件；1 Organic light emitting diode device;
10玻璃基板、20玻璃盖板、30密封胶层；10 glass substrate, 20 glass cover plate, 30 sealant layer;
11阵列基板层、12电致发光层、13第一薄膜封装层；11 array substrate layer, 12 electroluminescence layer, 13 first thin film encapsulation layer;
21彩色滤光片、22量子发光层、23光学调制层、24光隔离层、21 color filter, 22 quantum light emitting layer, 23 optical modulation layer, 24 optical isolation layer,
25填充层、26第二光调节层、27第二薄膜封装层、31干燥剂层；25 filling layer, 26 second light adjustment layer, 27 second film encapsulation layer, 31 desiccant layer;
121空穴注入层、122空穴传输层、123有机发光层、121 hole injection layer, 122 hole transport layer, 123 organic light emitting layer,
124电子传输层、125电子注入层、126阴极层；124 electron transport layer, 125 electron injection layer, 126 cathode layer;
211黑色光阻层、212红绿彩色滤光层、213第一平坦化层；211 black photoresist layer, 212 red and green color filter layer, 213 first planarization layer;
221黑色矩阵层、222红绿量子点膜层、223第二平坦化层。221 black matrix layer, 222 red and green quantum dot film layer, 223 second planarization layer.
本发明的实施方式Embodiments of the invention
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。In the present invention, unless otherwise clearly defined and defined, the "above" or "below" of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them. Moreover, "above", "above" and "above" the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is higher in level than the second feature. The "below", "below" and "below" the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
在本发明中，相同或相对应的部件用相同的附图标记表示而与图号无关，在说明书全文中，当“第一”、“第二”等措辞可用于描述各种部件时，这些部件不必限于以上措辞。以上措辞仅用于将一个部件与另一部件区分开。In the present invention, the same or corresponding parts are denoted by the same reference numerals regardless of the figure number. Throughout the specification, when the terms "first" and "second" can be used to describe various parts, these The components need not be limited to the above wording. The above terms are only used to distinguish one component from another.
请参阅图1所示，本发明一实施例提供一种有机发光二极管器件1，包括玻璃基板10、与所述玻璃基板10相对设置的玻璃盖板20以及密封胶层30，所述密封胶层30位于所述玻璃基板10和玻璃盖板20之间并分布于四周，用于连接并密封所述玻璃基板10和玻璃盖板20。在所述玻璃基板10的上表面依次堆叠有阵列基板层11、电致发光层12和第一薄膜封装层13；在所述玻璃盖板20的下表面依次堆叠有包括彩色滤光片21、量子发光层22、光学调制层23和光隔离层24。所述有机发光二极管器件1还包括有填充层25，所述填充层25位于所述密封胶层30的内侧，用来填充并连接所述玻璃基板10和所述玻璃盖板20，尤其是用来填充所述玻璃基板10和所述玻璃盖板20之间的缝隙。所述彩色滤光片21包括黑色光阻层211、红绿彩色滤光层212和第一平坦化层213；其中，所述光隔离层24与所述黑色光阻层211相对设置，用于阻挡所述电致发光层12发出的光线防止漏光。其中所述密封胶层30优选UV胶层。Please refer to FIG. 1, an embodiment of the present invention provides an organic light emitting diode device 1, including a glass substrate 10, a glass cover 20 disposed opposite to the glass substrate 10, and a sealant layer 30. The sealant layer 30 is located between the glass substrate 10 and the glass cover plate 20 and distributed around, and is used to connect and seal the glass substrate 10 and the glass cover plate 20. On the upper surface of the glass substrate 10, an array substrate layer 11, an electroluminescent layer 12, and a first thin film encapsulation layer 13 are sequentially stacked; on the lower surface of the glass cover plate 20, a color filter 21, The quantum light emitting layer 22, the optical modulation layer 23, and the light isolation layer 24. The organic light-emitting diode device 1 further includes a filling layer 25 located inside the sealant layer 30 for filling and connecting the glass substrate 10 and the glass cover 20, especially To fill the gap between the glass substrate 10 and the glass cover 20. The color filter 21 includes a black photoresist layer 211, a red and green color filter layer 212, and a first planarization layer 213; wherein, the light isolation layer 24 is disposed opposite to the black photoresist layer 211 for The light emitted by the electroluminescent layer 12 is blocked to prevent light leakage. The sealant layer 30 is preferably a UV glue layer.
进一步的，其中所述量子发光层22包括黑色矩阵层221、红绿量子点膜层222和第二平坦化层223；所述光隔离层24与所述黑色矩阵层相对设置。Further, the quantum light-emitting layer 22 includes a black matrix layer 221, a red and green quantum dot film layer 222, and a second planarization layer 223; the optical isolation layer 24 is arranged opposite to the black matrix layer.
进一步的，其中所述阵列基板层11从下至上依次包括薄膜晶体管层、像素定义层和阳极层。此结构为现有技术，在此不做赘述。Further, the array substrate layer 11 includes a thin film transistor layer, a pixel definition layer, and an anode layer in order from bottom to top. This structure is a prior art, and will not be described here.
请参阅图2所示，其中所述电致发光层12从下至上依次包括空穴注入层121、空穴传输层122、有机发光层123、电子传输层124、电子注入层125和阴极层126。Please refer to FIG. 2, where the electroluminescent layer 12 includes a hole injection layer 121, a hole transport layer 122, an organic light emitting layer 123, an electron transport layer 124, an electron injection layer 125, and a cathode layer 126 from bottom to top. .
进一步的，其中在所述密封胶层30和填充层25之间还包括干燥剂层31。Furthermore, a desiccant layer 31 is further included between the sealant layer 30 and the filling layer 25.
请参阅图3所示，其中所述彩色滤光片21和所述量子发光层22之间还包括第二光调节层26及第二薄膜封装层27。Please refer to FIG. 3, where the color filter 21 and the quantum light emitting layer 22 further include a second light adjustment layer 26 and a second thin film encapsulation layer 27.
请参阅图4所示，本发明提供一种有机发光二极管的制作方法，在一实施例中，所述制作方法包括步骤S1-S3。Referring to FIG. 4, the present invention provides a manufacturing method of an organic light emitting diode. In one embodiment, the manufacturing method includes steps S1-S3.
制作玻璃基板10步骤S1，具体是，提供一玻璃基板10，并在所述玻璃基板10的上表面从下至上依次制作阵列基板层11、电致发光层12和第一薄膜封装层13。The step S1 of manufacturing the glass substrate 10 is to provide a glass substrate 10, and sequentially fabricate the array substrate layer 11, the electroluminescent layer 12 and the first thin film encapsulation layer 13 on the upper surface of the glass substrate 10 from bottom to top.
制作玻璃盖板20步骤S2，具体是，提供一玻璃盖板20，在所述玻璃盖板20从下至上依次制作彩色滤光片21、量子发光层22、光学调制层23和光隔离层24；所述彩色滤光片21的厚度小于3.5um；所述量子发光层22的厚度小于10um。Step S2 of manufacturing the glass cover plate 20, specifically, providing a glass cover plate 20, on which the color filter 21, the quantum light emitting layer 22, the optical modulation layer 23 and the light isolation layer 24 are sequentially manufactured on the glass cover plate 20 from bottom to top; The thickness of the color filter 21 is less than 3.5 um; the thickness of the quantum light-emitting layer 22 is less than 10 um.
封装成盒步骤S3，具体是，利用填充层25填充并连接所述玻璃基板10和所述玻璃盖板20，并在所述玻璃基板10和玻璃盖板20相对的周围使用密封胶层30进行密封和连接。其中所述第一薄膜封装层13和填充层25相对设置，所述密封胶层30位于所述填充层25的外侧。The packaging into a box step S3, specifically, using a filling layer 25 to fill and connect the glass substrate 10 and the glass cover plate 20, and use a sealant layer 30 around the glass substrate 10 and the glass cover plate 20 opposite to each other. Seal and connect. The first film encapsulation layer 13 and the filling layer 25 are arranged opposite to each other, and the sealant layer 30 is located outside the filling layer 25.
请参阅图5所示，制作玻璃基板步骤S1具体包括：Please refer to FIG. 5, the step S1 of manufacturing the glass substrate specifically includes:
制作阵列基板层步骤S11，具体是，提供一玻璃基板10，在所述玻璃基板10的上表面通过溅射成膜、有机化学成膜、曝光、显影和刻蚀工艺逐层形成阵列基板层11，所述阵列基板层11从下至上依次包括薄膜晶体管层、像素定义层和阳极层；Step S11 of preparing the array substrate layer, specifically, providing a glass substrate 10, and forming the array substrate layer 11 layer by layer on the upper surface of the glass substrate 10 through sputtering film formation, organic chemical film formation, exposure, development and etching processes. , The array substrate layer 11 includes a thin film transistor layer, a pixel definition layer, and an anode layer in order from bottom to top;
制作电致发光层步骤S12，具体是，在所述阵列基板层11上采用掩膜板蒸镀工艺（Open MASK）从下至上依次制作空穴注入层121、空穴传输层122、有机发光层123、电子传输层124、电子注入层125和阴极层126作为电致发光层12；所述电致发光层12的厚度范围为400-600nm；所述阴极层126为顶发射方式阴极，材料采用ITO、IZO、Mg或Ag中的任一种；其中也可以采用喷墨打印和掩膜板蒸镀方式进行所述电致发光层12制作，所述电致发光层12采用B\BB\BBB单层或串联多层结构；Step S12 of preparing an electroluminescent layer, specifically, a hole injection layer 121, a hole transport layer 122, and an organic light emitting layer are sequentially formed on the array substrate layer 11 using an Open MASK process from bottom to top 123. The electron transport layer 124, the electron injection layer 125 and the cathode layer 126 serve as the electroluminescent layer 12; the thickness of the electroluminescent layer 12 ranges from 400 to 600nm; the cathode layer 126 is a top emission cathode, and the material is used Any one of ITO, IZO, Mg or Ag; among them, inkjet printing and mask evaporation can also be used to make the electroluminescent layer 12, and the electroluminescent layer 12 is made of B\BB\BBB Single layer or tandem multilayer structure;
制作第一薄膜封装层13步骤S13，具体是，采用化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)制作第一薄膜封装层13，所述第一薄膜封装层13为SiO\SiOC\SiON单层或多层膜组合，所述第一薄膜封装层13的厚度范围为500-800nm，保证所述电致发光层12不被水氧侵入。Step S13 of fabricating the first thin film encapsulation layer 13, specifically, using Plasma Enhanced Chemical Vapor Deposition (PECVD) to fabricate the first thin film encapsulation layer 13, and the first thin film encapsulation layer 13 is a single layer of SiO\SiOC\SiON Or a combination of multi-layer films, the thickness of the first thin-film encapsulation layer 13 ranges from 500 nm to 800 nm, which ensures that the electroluminescent layer 12 is not invaded by water and oxygen.
在本实施例中，所述制作彩色滤光片21的步骤具体包括：在所述玻璃盖板20上从下至上依次制作黑色光阻层、红绿彩色滤光层和第一平坦化层，所述黑色光阻层、红绿彩色滤光层和第一平坦化层构成彩色滤光片21。In this embodiment, the step of manufacturing the color filter 21 specifically includes: sequentially manufacturing a black photoresist layer, a red and green color filter layer, and a first planarization layer on the glass cover 20 from bottom to top, The black photoresist layer, the red and green color filter layer and the first planarization layer constitute a color filter 21.
在本实施例中，所述制作量子发光层22的步骤具体包括：在所述彩色滤光片21的下表面依次制作黑色矩阵层221、红绿量子点膜层222和第二平坦化层223，所述黑色矩阵层、所述红绿量子点膜层、所述第二平坦化层构成量子发光层22。In this embodiment, the step of fabricating the quantum light emitting layer 22 specifically includes: sequentially fabricating a black matrix layer 221, a red and green quantum dot film layer 222, and a second planarization layer 223 on the lower surface of the color filter 21 The black matrix layer, the red and green quantum dot film layer, and the second planarization layer constitute the quantum light emitting layer 22.
请参阅图6所示，在本实施例中，制作玻璃盖板20的步骤S2还包括制作第二光调节层26及第二薄膜封装层27步骤S21，具体是，在所述彩色滤光片21与所述量子发光层22之间制作所述第二光调节层26及所述第二薄膜封装层27。Please refer to FIG. 6, in this embodiment, the step S2 of making the glass cover plate 20 further includes the step S21 of making the second light adjustment layer 26 and the second thin film encapsulation layer 27, specifically, the color filter The second light adjustment layer 26 and the second thin film encapsulation layer 27 are formed between 21 and the quantum light emitting layer 22.
请参阅图7所示，封装成盒步骤S3还包括制作干燥剂层步骤S31，具体是，在所述密封胶层30和所述填充层25之间设置干燥剂作为干燥剂层31，所述干燥剂层31与所述密封胶层30相对设置。所述干燥剂优选Getter干燥剂。Please refer to FIG. 7, the packaging and forming step S3 also includes the step S31 of making a desiccant layer. Specifically, a desiccant is disposed between the sealant layer 30 and the filling layer 25 as the desiccant layer 31. The desiccant layer 31 is disposed opposite to the sealant layer 30. The desiccant is preferably Getter desiccant.
本发明的优点在于，提供一种有机发光二极管器件及其制作方法，可通过减小玻璃基板和玻璃盖板之间的盒距及设置光隔离层挡光，解决因为盒厚引起的器件漏光等问题。The advantage of the present invention is to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and setting the optical isolation layer to block light. problem.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be considered This is the protection scope of the present invention.

Claims (10)

  1. 一种有机发光二极管器件，其中，包括An organic light emitting diode device, which includes
    玻璃基板，在所述玻璃基板的上表面依次堆叠有阵列基板层、电致发光层和第一薄膜封装层；A glass substrate, on which an array substrate layer, an electroluminescence layer and a first thin film encapsulation layer are sequentially stacked on the upper surface of the glass substrate;
    玻璃盖板，与所述玻璃基板相对设置，在所述玻璃盖板的下表面依次堆叠有彩色滤光片、量子发光层、光学调制层和光隔离层；以及A glass cover plate is arranged opposite to the glass substrate, and a color filter, a quantum light emitting layer, an optical modulation layer and an optical isolation layer are sequentially stacked on the lower surface of the glass cover plate; and
    密封胶层，位于所述玻璃基板和所述玻璃盖板之间并位于所述玻璃基板和所述玻璃盖板的周围，用于连接并密封所述玻璃基板和所述玻璃盖板；A sealant layer, located between the glass substrate and the glass cover plate and around the glass substrate and the glass cover plate, for connecting and sealing the glass substrate and the glass cover plate;
    其中，所述彩色滤光片包括黑色光阻层、红绿彩色滤光层和第一平坦化层；Wherein, the color filter includes a black photoresist layer, a red and green color filter layer, and a first planarization layer;
    其中，所述光隔离层与所述黑色光阻层相对设置，用于阻挡所述电致发光层发出的光线防止漏光。Wherein, the light isolation layer is disposed opposite to the black photoresist layer, and is used to block the light emitted by the electroluminescent layer to prevent light leakage.
  2. 根据权利要求1所述的有机发光二极管器件，其中，还包括有填充层，位于所述密封胶层的内侧，用来填充并连接所述玻璃基板和所述玻璃盖板。4. The organic light emitting diode device of claim 1, further comprising a filling layer located inside the sealant layer for filling and connecting the glass substrate and the glass cover plate.
  3. 根据权利要求1所述的有机发光二极管器件，其中，所述量子发光层从下至上依次包括黑色矩阵层、红绿量子点膜层和第二平坦化层；所述光隔离层与所述黑色矩阵层相对设置；The organic light emitting diode device according to claim 1, wherein the quantum light emitting layer includes a black matrix layer, a red and green quantum dot film layer, and a second planarization layer from bottom to top; the optical isolation layer and the black Relative setting of matrix layer;
    所述电致发光层从下至上依次包括空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和阴极层。The electroluminescent layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and a cathode layer in order from bottom to top.
  4. 根据权利要求2所述的有机发光二极管器件，其中，所述密封胶层和所述填充层之间还包括干燥剂层。The organic light emitting diode device of claim 2, wherein a desiccant layer is further included between the sealant layer and the filling layer.
  5. 根据权利要求1所述的有机发光二极管器件，其中，所述彩色滤光片和所述量子发光层之间还包括第二光调节层及第二薄膜封装层。The organic light emitting diode device of claim 1, wherein the color filter and the quantum light emitting layer further comprise a second light adjustment layer and a second thin film encapsulation layer.
  6. 一种权利要求1所述的有机发光二极管器件的制作方法，包括步骤：A method for manufacturing an organic light emitting diode device according to claim 1, comprising the steps:
    制作玻璃基板步骤，其为提供一玻璃基板，在所述玻璃基板的上表面依次制作阵列基板层、电致发光层和第一薄膜封装层；The step of manufacturing a glass substrate includes providing a glass substrate, and sequentially fabricating an array substrate layer, an electroluminescence layer, and a first thin film packaging layer on the upper surface of the glass substrate;
    制作玻璃盖板步骤，其为提供一玻璃盖板，在所述玻璃盖板的下表面依次制作彩色滤光片、量子发光层、光学调制层和光隔离层；所述彩色滤光片的厚度小于3.5um；所述量子发光层的厚度小于10um；The step of manufacturing a glass cover plate is to provide a glass cover plate, on the lower surface of the glass cover plate, a color filter, a quantum light-emitting layer, an optical modulation layer and an optical isolation layer are sequentially manufactured; the thickness of the color filter is less than 3.5um; the thickness of the quantum light-emitting layer is less than 10um;
    封装成盒步骤，利用填充层填充于所述玻璃基板和所述玻璃盖板之间，并且所述第一薄膜封装层和所述填充层相对设置，使所述玻璃基板和所述玻璃盖板通过所述填充层连接；在所述玻璃基板和玻璃盖板的周围使用密封胶层进行密封和连接，其中所述密封胶层位于所述填充层的外侧。In the step of packaging into a box, a filling layer is used to fill between the glass substrate and the glass cover plate, and the first film packaging layer and the filling layer are arranged opposite to each other, so that the glass substrate and the glass cover plate Connected through the filling layer; a sealant layer is used for sealing and connecting around the glass substrate and the glass cover, wherein the sealant layer is located outside the filling layer.
  7. 根据权利要求6所述的有机发光二极管器件的制作方法，其中，所述制作玻璃基板结构步骤具体包括：7. The method for manufacturing an organic light emitting diode device according to claim 6, wherein the step of manufacturing a glass substrate structure specifically comprises:
    制作阵列基板层步骤，其为提供一玻璃基板，在所述玻璃基板上通过溅射成膜、有机化学成膜、曝光、显影和刻蚀工艺逐层形成阵列基板层；The step of preparing the array substrate layer is to provide a glass substrate on which the array substrate layer is formed layer by layer through sputtering film formation, organic chemical film formation, exposure, development and etching processes;
    制作电致发光层步骤，其为在所述阵列基板层上采用掩膜板蒸镀工艺从下至上依次制作空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层和阴极层作为电致发光层；所述电致发光层的厚度范围为400-600nm；所述阴极层为顶发射方式阴极，材料采用ITO、IZO、Mg或Ag中的任一种；The step of preparing an electroluminescent layer is to use a mask evaporation process to sequentially form a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and an electron injection layer on the array substrate layer from bottom to top. The cathode layer is used as an electroluminescent layer; the thickness of the electroluminescent layer is in the range of 400-600nm; the cathode layer is a top emission cathode, and the material is any one of ITO, IZO, Mg or Ag;
    制作第一薄膜封装层步骤，其为采用化学气相沉积制作第一薄膜封装层，所述第一薄膜封装层为SiO\SiOC\SiON单层或多层膜组合，所述第一薄膜封装层的厚度范围为500-800nm。The step of making a first thin-film encapsulation layer is to use chemical vapor deposition to make a first thin-film encapsulation layer, the first thin-film encapsulation layer is a SiO\SiOC\SiON single layer or a combination of multiple layers, and the first thin-film encapsulation layer is The thickness range is 500-800nm.
  8. 根据权利要求6所述的有机发光二极管器件的制作方法，其中，制作所述彩色滤光片的具体步骤是：在所述玻璃盖板的下表面依次制作黑色光阻层、红绿彩色滤光层和第一平坦化层，所述黑色光阻层、所述红绿彩色滤光层和所述第一平坦化层构成所述彩色滤光片，所述彩色滤光片的厚度小于3.5um；7. The method for manufacturing an organic light emitting diode device according to claim 6, wherein the specific steps of manufacturing the color filter are: sequentially manufacturing a black photoresist layer, a red and green color filter on the lower surface of the glass cover plate Layer and a first planarization layer, the black photoresist layer, the red-green color filter layer and the first planarization layer constitute the color filter, and the thickness of the color filter is less than 3.5um ；
    其中制作所述量子发光层的具体步骤是：在所述彩色滤光片的下表面依次制作黑色矩阵层、红绿量子点膜层和第二平坦化层，所述黑色矩阵层、红绿量子点膜层、第二平坦化层构成所述量子发光层。The specific steps of manufacturing the quantum light-emitting layer are: sequentially fabricating a black matrix layer, a red-green quantum dot film layer, and a second planarization layer on the lower surface of the color filter, the black matrix layer, the red-green quantum dots The dot film layer and the second planarization layer constitute the quantum light emitting layer.
  9. 根据权利要求6所述的有机发光二极管器件的制作方法，其中，所述制作玻璃盖板步骤还包括The method of manufacturing an organic light emitting diode device according to claim 6, wherein the step of manufacturing a glass cover plate further comprises
    制作第二光调节层及第二薄膜封装层步骤，其为在所述彩色滤光片与所述量子发光层之间制作所述第二光调节层及所述第二薄膜封装层。The step of manufacturing a second light adjustment layer and a second thin film encapsulation layer is to prepare the second light adjustment layer and the second thin film encapsulation layer between the color filter and the quantum light emitting layer.
  10. 根据权利要求6所述的有机发光二极管器件的制作方法，其中，所述封装成盒步骤还包括The method of manufacturing an organic light emitting diode device according to claim 6, wherein the packaging into a box step further comprises
    制作干燥剂层步骤，其为在所述密封胶层和所述填充层之间设置干燥剂作为干燥剂层，所述干燥剂层与所述密封胶层相对设置。The step of preparing a desiccant layer includes disposing a desiccant as a desiccant layer between the sealant layer and the filling layer, and the desiccant layer is disposed opposite to the sealant layer.
PCT/CN2019/085532 2019-04-09 2019-05-05 Organic light emitting diode device and manufacturing method therefor WO2020206773A1 (en)

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