WO2020199206A1 - 透明或半透明材料微观缺陷检测***及方法 - Google Patents

透明或半透明材料微观缺陷检测***及方法 Download PDF

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WO2020199206A1
WO2020199206A1 PCT/CN2019/081552 CN2019081552W WO2020199206A1 WO 2020199206 A1 WO2020199206 A1 WO 2020199206A1 CN 2019081552 W CN2019081552 W CN 2019081552W WO 2020199206 A1 WO2020199206 A1 WO 2020199206A1
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transparent
defect
frequency
scanning
scattered light
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PCT/CN2019/081552
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English (en)
French (fr)
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王星泽
闫静
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合刃科技（深圳）有限公司
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Priority to PCT/CN2019/081552 priority Critical patent/WO2020199206A1/zh
Priority to CN201980005534.4A priority patent/CN111316090A/zh
Publication of WO2020199206A1 publication Critical patent/WO2020199206A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8901—Optical details; Scanning details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/8914—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the material examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
    • G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
    • G01N21/896—Optical defects in or on transparent materials, e.g. distortion, surface flaws in conveyed flat sheet or rod
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8867—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing
    • G01N2021/887—Grading and classifying of flaws using sequentially two or more inspection runs, e.g. coarse and fine, or detecting then analysing the measurements made in two or more directions, angles, positions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8874—Taking dimensions of defect into account
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Definitions

  • the invention relates to the technical field of industrial inspection, in particular to a system and method for detecting microscopic defects of transparent or translucent materials.
  • the detection methods for scratches in the industrial inspection field are: 1. Use low-angle monochromatic light to illuminate the object; 2. Collect images by CCD/CMOS; 3. Use image processing software to process the images and defects Perform testing. Due to the limitations of the current lighting hardware, the traditional method can only detect scratches in a certain direction, but in practical applications, the direction of the scratches is uncertain, so it is easy to miss and misdetect.
  • the present invention specifically proposes A system for detecting microscopic defects of transparent or translucent materials.
  • a microscopic defect detection system for transparent or translucent materials including:
  • Coherent light source used to emit a coherent beam to scan transparent or semi-transparent samples
  • the photoelectric sensor is used to collect the scattered light intensity imaging of the sample, the photoelectric sensor, the coherent light source and the sample have a relative collection position in space, and the relative collection position includes at least a scattering angle and a State the distance of the seized material;
  • the frequency threshold range is a reference value range based on light scattering from an impure medium, which is calculated in advance according to the Lorenz-Mie theory and corresponds to the relative collection position.
  • the system further includes a stage for carrying the inspection material
  • the stage also includes an orthogonal X-direction and Y-direction movement mechanism for driving the inspection material to move in the X direction and the Y direction for scanning;
  • the position of the coherent light source, the photoelectric sensor, and the sample is relatively fixed during the scanning process.
  • the controller is used to move the coherent light source and/or the photoelectric sensor to scan the sample
  • the controller is also used to monitor the relative collection position of the photoelectric sensor with respect to the coherent light source and the sample, and obtain the frequency threshold range corresponding to the relative collection position.
  • the number of the photoelectric sensors is N, and N is greater than or equal to 2.
  • the N photoelectric sensors, the coherent light source, and the sample have N relative collection positions in space.
  • the controller is also used to monitor the N cutoff frequencies corresponding to the scattered light intensity imaging collected by the N relative acquisition positions corresponding to the scanning position, and if there is a cutoff frequency that does not belong to the corresponding frequency threshold range, the scanning position is recorded Is the defect location.
  • the coherent light source is a laser light source
  • the inspection material is scanned in a line scan manner.
  • the present invention also proposes a problem.
  • a method for detecting microscopic defects of transparent or translucent materials is based on the aforementioned controller.
  • a method for detecting microscopic defects of transparent or translucent materials including:
  • the relative collection position includes at least a scattering angle and a distance to the sample; the cutoff frequency corresponds to the scanning position and the relative collection position corresponding to the scanning position;
  • the frequency threshold range is a reference value range based on light scattering from an impure medium, which is calculated in advance according to the Lorenz-Mie theory and corresponds to the relative collection position.
  • the scan is a line scan
  • the scan direction includes orthogonal X direction and Y direction.
  • N there are N relative collection positions, and N is greater than or equal to 2;
  • the monitoring of the scanning position when the cutoff frequency does not belong to the frequency threshold range as the defect position includes:
  • the method further includes:
  • the transparent or semi-transparent material is scanned by coherent light, and the scan is When scanning the position, collect the scattered light intensity distribution at a certain scattering angle and distance, and compare the scattered light intensity distribution with the reference value calculated according to the Lorenz-Mie theory, and the scattered light intensity distribution does not meet the reference value
  • the scanning position is recorded as the defect position, so that after the scanning is completed, the size and type of the defect in the sample can be determined by integrating the collection of the defect position in the sample.
  • Figure 1 is a schematic diagram of a transparent or translucent material micro defect detection system in an embodiment
  • Figure 2 is a distribution diagram of the spatial scattered light intensity of the same refractive index and different defect sizes
  • Figure 3 shows the amplitude-frequency curve and phase-frequency curve of the scattered light intensity distribution with a refractive index of 0.56 and a defect size of 6.6um after FFT transformation in an embodiment
  • Figure 4 shows the amplitude-frequency curve and phase-frequency curve of the scattered light intensity distribution with a refractive index of 0.56 and a defect size of 13.2um after FFT transformation in an embodiment
  • Fig. 5 is a schematic diagram of defect detection principle in an embodiment
  • Fig. 6 is a flow chart of a method for detecting microscopic defects of transparent or translucent materials in an embodiment.
  • the present invention A system for detecting microscopic defects of transparent or semi-transparent materials is proposed, which includes a coherent light source 10, a photoelectric sensor 20, and a controller 30.
  • the coherent light source 10 is used to emit a coherent beam to scan a transparent or semi-transparent sample, and may be a laser, a laser diode, a laser array, or the like.
  • the photoelectric sensor 20 is used to collect the scattered light intensity imaging of the sample, and it may be a camera or other photosensitive elements that can convert light signals into electrical signals.
  • the controller 30 may be a computer system based on the Von Neumann system that relies on the execution of a computer program, may be a single-chip microcomputer integrated on other components, or may be an independent personal computer, notebook computer, or server device.
  • the transparent or translucent material micro defect detection system of the present invention is based on the generalized Lorenz-Mie theory.
  • light scattering is divided into two types: pure medium light scattering and impure medium light scattering.
  • Light scattering from impure media refers to the scattering phenomenon of light when light is transmitted in materials containing defects (such as bubbles, impurities, cracks, ripples, scratches, bumps, etc.) when it encounters these defects. This kind of scattering phenomenon is not inherent to the substance itself, and the intensity of its scattered light is related to the nature of the defect. The frequency of the scattered light and the incident light are the same, and the intensity of the scattered light is also related to the wavelength of the incident light, specifically:
  • Isca is the intensity of scattered light
  • ⁇ is the wavelength of incident light
  • a is a positive integer.
  • ⁇ 0 is the laser beam waist size of the laser beam.
  • r is the distance from point P to the scatterer
  • ⁇ is the scattering angle of point P
  • q is the particle size parameter
  • m is the relative complex refractive index
  • ⁇ 0 is the laser beam waist size of the laser beam
  • I 0 is the incident light intensity.
  • the light intensity of point P can be expressed as:
  • a n , b n , ⁇ n , ⁇ n are the Mie scattering coefficients.
  • m and q are unknown in actual detection, they can pass To control the photoelectric sensor to obtain different spatial light intensity combinations at different spatial receiving positions, that is, select multiple P points on the scatterer sphere to collect scattered light intensity information, and establish the relationship between spatial light intensity and defect information, and then use theoretical simulation
  • the method combined with reality establishes a database model corresponding to the relative collection position of the scattered light collected by the photoelectric sensor (the aforementioned P point position) and the spatial distribution of the scattered light intensity, and then the scattered light collected by the photoelectric sensor at a certain relative collection position P
  • the light intensity is compared with the reference scattered light intensity corresponding to the relative collection position P stored in the database model. According to the difference, it can be judged whether the scattered light intensity collected at the relative collection position P is the scattered light caused by the defect. Determine whether there are defects and the size of the defects.
  • the coherent light source 10 and the sample When applied to the embodiment of the present invention, that is, the photoelectric sensor 20, the coherent light source 10 and the sample have a relative collection position in space, and the relative collection position includes at least the scattering angle and the distance to the sample.
  • the controller 30 is used to obtain the scattered light intensity imaging corresponding to the scanning position; perform Fourier transform on the scattered light intensity imaging to obtain the corresponding amplitude spectrum and phase spectrum, and obtain the corresponding amplitude spectrum and phase spectrum. Cutoff frequency; The cutoff frequency corresponds to the scanning position and the relative acquisition position corresponding to the scanning position.
  • the controller 30 is also used to monitor the scan position when the cutoff frequency does not belong to the frequency threshold range as the defect position, and determine the defect according to the defect position; and the frequency threshold range is calculated in advance according to the Lorenz-Mie theory, The reference value range based on the light scattering of the impure medium corresponding to the relative collection position.
  • FIG. 2 which shows the distribution of spatially scattered light intensity under defects with a material refractive index of 0.56 and a defect radius of 6.6um and 13.2um.
  • the value of the distance between the wave crests in the spatial range becomes smaller, more precisely, the value of the angle between the two wave crests becomes smaller and smaller.
  • the distribution of the spatial scattered light intensity within a certain range is passed through FFT (Fourier transform), for the same refractive index (same defect material) and different q values (different defect sizes), as the q value increases, that is, as the defect size increases, the phase frequency and amplitude frequency
  • the cutoff frequency of the curve also increases accordingly.
  • Figures 3 and 4 show the amplitude-frequency curve and phase-frequency curve of the scattered light intensity distribution after FFT transformation.
  • the cut-off frequency of the scattered light in the fixed space also increases monotonously, so in the actual inspection process, the cut-off frequency of the scattered light in the fixed space can be used to judge Defect size. In actual inspection, it is only necessary to compare the actual received scattered light cut-off frequency with the theoretically calculated simulation value to determine the existence and size of the defect.
  • the system further includes a stage 40 for carrying the inspection material.
  • the stage also includes orthogonal X-direction and Y-direction movement mechanisms for driving the inspection material to move in the X-direction and Y-direction for scanning.
  • the coherent light source, the photoelectric sensor, and the sample are relatively fixed in position during the scanning process.
  • the scanning process is a linear coherent light beam emitted by a coherent light source, and the stage 40 moves the animal in the X or Y direction along the X-axis or Y-axis, so that the coherent beam is oriented toward transparent or semi-transparent building materials.
  • the cut-off frequency of the amplitude-frequency curve information and phase-frequency curve information generated by the scattered light intensity of the measured object through FFT transformation, and the cut-off frequency is a database corresponding to the relative collection position pre-calculated by the theoretical value and the spatial distribution of the scattered light intensity
  • the frequency threshold range stored in the model is compared with the frequency threshold range corresponding to the relative acquisition position in real time. If the cut-off frequency is not within the frequency threshold range, the scanning position is recorded as the defect position.
  • the stage 40 drives the inspection material to move along the X axis, when it reaches the x1 position, it is detected that the cutoff frequency is not in the corresponding frequency threshold range, and when it reaches the x2 position, the cutoff frequency is detected
  • the recovery is in the corresponding frequency threshold range, which can be recorded on the X axis, and there is a defect in the position between x1 and x2.
  • the stage 40 drives the inspection material to move along the Y axis, when it reaches the y1 position, it is detected that the cutoff frequency is not in the corresponding frequency threshold range, and when the y2 position is reached, the cutoff frequency is detected to be restored to the corresponding frequency threshold.
  • the range it can be recorded on the Y axis, and the position in the interval between y1 and y2 is defective. Then, it can be determined that there are defects in the rectangular positions determined by the four vertices x1, x2, y1, and y2 of the sample.
  • the controller 30 is used to move the coherent light source 10 and/or the photoelectric sensor 20 to scan the sample.
  • the controller 30 is also used to monitor the relative collection position of the photoelectric sensor 20 with respect to the coherent light source 10 and the sample, and obtain the frequency threshold range corresponding to the relative collection position.
  • a fixed stage can be used to scan the sample without moving the sample through the stage, but the scanning line can be moved by moving the coherent light source 10 to realize the scanning of the sample.
  • the defect recognition algorithm is the same. It only needs to obtain the relative position of the real-time coherent light source 10 and the photoelectric sensor 20 to determine the relative acquisition position of the photoelectric sensor 20 to collect the scattering imaging at the time, which can be read from the aforementioned database. Take the corresponding frequency threshold range and compare it with the cut-off frequency of real-time monitoring to identify the defects of the inspected material.
  • the number of photoelectric sensors may be N, and N is greater than or equal to 2.
  • the N photoelectric sensors, the coherent light source, and the inspection material have N relative collection positions in space, and in the scanning process, for a scanning position, there are corresponding N relative collection positions.
  • the controller is also used to monitor the N cutoff frequencies corresponding to the scattered light intensity imaging collected by the N relative acquisition positions corresponding to the scanning position, and if there is a cutoff frequency that does not belong to the corresponding frequency threshold range, the scanning position is recorded as a defect position.
  • multiple photoelectric sensors can be set, and when scanning to a scanning position, it can be collected at multiple relative collection positions, as long as there is a cut-off frequency of the scattered light intensity distribution collected at a relative collection position and is not pre-stored in the database Within the frequency threshold range corresponding to the relative collection position, it is determined that the sample has a defect at the scanning position. In this way, a single photoelectric sensor collection may be affected by ambient light or other noises, which may cause missed detection. Multiple photoelectric sensors can be used to detect at multiple scattering angles, thereby preventing missed detection.
  • the controller 30 can verify the defects in the inspected material by other means, such as manual re-inspection, or re-inspection in other ways, so as to confirm the accuracy of the defect detection.
  • the frequency threshold range corresponding to the relative acquisition position of the wrongly detected defect in the database can be updated according to the re-inspection situation, so that the theoretical reference value can be updated
  • the reference value can reduce false detections and improve the accuracy of detection during the next detection.
  • the present invention A method for detecting microscopic defects of transparent or semi-transparent materials is also proposed.
  • the execution of the method relies on a computer program and is based on the aforementioned controller 30. Specifically, the method includes:
  • Step S102 Scan the sample through the coherent beam.
  • Step S104 When scanning to a scanning position: collect the scattered light intensity imaging of the sample at a relative collection position; perform Fourier transform on the scattered light intensity imaging to obtain the corresponding amplitude spectrum and phase spectrum, and obtain the Cutoff frequency of the amplitude spectrum and phase spectrum.
  • the relative collection position includes at least a scattering angle and a distance to the sample; the cutoff frequency corresponds to the scanning position and the relative collection position corresponding to the scanning position.
  • Step S106 Monitor the scan position when the cut-off frequency does not belong to the frequency threshold range as the defect position, and determine the defect based on the defect position; the frequency threshold range is calculated in advance according to the Lorenz-Mie theory, and is consistent with The reference value range based on the light scattering of the impure medium corresponding to the relative collection position.
  • the scan is a line scan
  • the scan direction includes orthogonal X direction and Y direction.
  • N relative collection positions there are N relative collection positions, and N is greater than or equal to 2.
  • Monitoring the scanning position when the cutoff frequency does not belong to the frequency threshold range as the defect position includes:
  • the method further includes: verifying the defect, and updating the frequency threshold range according to the verification result.
  • the transparent or translucent material micro-defect detection system and the transparent or translucent material micro-defect detection method based on the controller in the system, for transparent or translucent materials, scan them by coherent light, and then scan them.
  • scan the position collect the scattered light intensity distribution at a certain scattering angle and distance, and compare the scattered light intensity distribution with the reference value calculated according to the Lorenz-Mie theory, and the scattered light intensity distribution does not meet the reference value
  • the scanning position is recorded as the defect position, so that after the scanning is completed, the size and type of the defect in the sample can be determined by integrating the collection of the defect position in the sample.
  • the above-mentioned system and method will not be affected by the light transmittance of transparent or translucent samples due to the scattered light collected.
  • the false detection rate and the missed detection rate are low.

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Abstract

一种透明或半透明材料微观缺陷检测***及方法，检测***包括：相干光源（10），用于出射相干光束扫描透明或半透明的检材；光电传感器（20），用于采集所述检材的散射光强成像；控制器（30），用于获取与扫描位置对应的所述散射光强成像；对散射光强成像进行傅里叶变换，得到相应的幅度谱和相位谱，获取所述幅度谱和相位谱的截止频率；所述截止频率与所述扫描位置及其对应的相对采集位置对应；监测所述截止频率不属于频率阈值范围时的扫描位置，将该扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。

Description

透明或半透明材料微观缺陷检测***及方法 技术领域
本发明涉及工业检测技术领域，特别涉及一种透明或半透明材料微观缺陷检测***及方法。
背景技术
通常情况下，产品的生产制造工艺中，气泡、杂质、裂纹、波纹、划伤、碰伤等常见的微缺陷往往难以避免。对于产品来说，这些表面缺陷会严重影响产品的使用性能和寿命；对于消费者来说，划伤是最容易被发现且最不能够容忍的缺陷之一。目前在工业检测领域中对于划伤的检测方法是：1、采用低角度的单色光对物体进行照明；2、由CCD/CMOS采集图像；3、由图像处理软件对图像进行处理并对缺陷进行检测。传统的方法由于目前照明硬件的限制，***只能够检测出某一个方向的划伤，但实际应用中，划伤的方向是不确定的，所以容易漏检和误检。
传统技术中还有采用基于主动结构光投影的三维重构的检测方法。但对于特定的透明或半透明表面进行外观检测时，由于采用光学成像技术对透明或半透明表面进行外观检测时，常常由于表面反射太强而产生局部亮度饱和区域，使得该区域无法进行缺陷分割识别，或因透射性太强而使图像无法获得表面缺陷信息，因此常用的光学三维扫描和二维成像方法都很难对透明或半透明表面进行微观缺陷检测。
发明内容
基于此，为解决传统技术中，常用的光学三维扫描和二维成像方法都很难对透明或半透明表面进行微观缺陷检测，漏检率和误检率较高的问题，本发明特提出了一种透明或半透明材料微观缺陷检测***。
一种透明或半透明材料微观缺陷检测***，包括：
相干光源，用于出射相干光束扫描透明或半透明的检材；
光电传感器，用于采集所述检材的散射光强成像，所述光电传感器与所述相干光源以及所述检材在空间上具有相对采集位置，所述相对采集位置至少包括散射角和到所述检材的距离；
控制器，用于获取与扫描位置对应的所述散射光强成像；对所述散射光强成像进行傅里叶变换，得到相应的幅频曲线信息和相频曲线信息，获取所述幅频曲线信息和相频曲线信息的截止频率；所述截止频率与所述扫描位置，以及所述扫描位置对应的相对采集位置对应；
监测所述截止频率不属于频率阈值范围时的扫描位置，将该扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；
所述频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。
在其中一个实施例中，所述***还包括载物台，用于承载所述检材；
所述载物台还包括正交的X方向和Y方向的运动机构，用于带动检材在X方向和Y方向移动以进行扫描；
所述相干光源和所述光电传感器与所述检材在扫描过程中位置相对固定。
在其中一个实施例中，所述控制器用于移动所述相干光源和/或所述光电传感器以对所述检材进行扫描；
所述控制器还用于监测所述光电传感器相对于所述相干光源和所述检材的相对采集位置，获取所述相对采集位置对应的频率阈值范围。
在其中一个实施例中，所述光电传感器的数量为N个，且N大于或等于2；N个所述光电传感器与所述相干光源以及所述检材在空间上具有N个相对采集位置。
在其中一个实施例中，扫描过程中，对于一扫描位置，对应有N个相对采集位置；
所述控制器还用于监测与扫描位置对应的N个相对采集位置采集的散射光强成像对应的N个截止频率，若存在一截止频率不属于相应的频率阈值范围，则记录所述扫描位置为缺陷位置。
在其中一个实施例中，所述相干光源为激光光源，以线扫描的方式扫描所 述检材。
此外，为解决传统技术中，常用的光学三维扫描和二维成像方法都很难对透明或半透明表面进行微观缺陷检测，漏检率和误检率较高的问题，本发明还提出了一种透明或半透明材料微观缺陷检测方法，该方法基于前述的控制器。
一种透明或半透明材料微观缺陷检测方法，包括：
通过相干光束对检材进行扫描；
扫描至一扫描位置时：在相对采集位置采集所述检材的散射光强成像；对所述散射光强成像进行傅里叶变换，得到相应的幅频曲线信息和相频曲线信息，获取所述幅频曲线信息和相频曲线信息的截止频率；
所述相对采集位置至少包括散射角和到所述检材的距离；所述截止频率与所述扫描位置，以及所述扫描位置对应的相对采集位置对应；
监测所述截止频率不属于频率阈值范围时的扫描位置，将该扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；
所述频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。
在其中一个实施例中，所述扫描为线扫描，且扫描方向包括正交的X方向和Y方向。
在其中一个实施例中，所述相对采集位置为N个，且N大于或等于2；
所述监测所述截止频率不属于频率阈值范围时的扫描位置作为缺陷位置包括：
对于一扫描位置，若在与所述扫描位置对应的N个相对采集位置采集的散射光强成像对应的N个截止频率中，存在一截止频率不属于相应的频率阈值范围，则记录所述扫描位置为缺陷位置。
在其中一个实施例中，所述根据所述缺陷位置确定缺陷之后还包括：
对所述缺陷进行校验，根据校验结果更新所述频率阈值范围
实施本发明实施例，将具有如下有益效果：
采用上述透明或半透明材料微观缺陷检测***，以及基于该***中的控制器的透明或半透明材料微观缺陷检测方法，对于透明或半透明材料，通过相干光对其进行扫描，在扫描到一扫描位置时，在一定的散射角和距离上采集散射光强分布，并将散射光强分布与根据洛伦茨-米氏理论计算得出参考值进行比较，将散射光强分布不符合参考值的扫描位置记录为缺陷位置，从而在扫描完成后，即可通过整合检材中缺陷位置的集合确定检材中缺陷的大小和类型。上述***和方法由于是采集的散射光，不会受到透明或半透明的检材的透光性的影响。同时，由于本发明将实时采集的散射光强分布与理论计算出的参考值进行比较，因此误检率和漏检率较低。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
其中：
图1为一个实施例中一种透明或半透明材料微观缺陷检测***的示意图；
图2为相同折射率不同缺陷大小空间散射光强分布图；
图3为一个实施例中折射率为0.56，缺陷大小为6.6um的散射光强分布经过FFT变换后的幅频曲线和相频曲线；
图4为一个实施例中折射率为0.56，缺陷大小为13.2um的散射光强分布经过FFT变换后的幅频曲线和相频曲线；
图5为一个实施例中缺陷检测原理示意图；
图6为一个实施例中一种透明或半透明材料微观缺陷检测方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造 性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
为解决传统技术中，常用的光学三维扫描和二维成像方法都很难对透明或半透明表面进行微观缺陷检测，漏检率和误检率较高的问题，如图1所示，本发明提出了一种透明或半透明材料微观缺陷检测***，包括：相干光源10、光电传感器20和控制器30。
其中，相干光源10，用于出射相干光束扫描透明或半透明的检材，可以是激光器、激光二极管、激光器阵列等。
光电传感器20，用于采集所述检材的散射光强成像，可以是相机也可以是其他可将光信号转换成电信号的感光元件。控制器30可以是依赖于计算机程序执行的基于冯诺依曼体系的计算机***，可以是集成在其他部件上的单片机，也可以是独立的个人电脑，笔记本电脑，服务器设备。
本发明的透明或半透明材料微观缺陷检测***基于广义的洛伦茨-米氏理论。
光在通过除真空以外的任意介质都会有部分光偏离原来的传播方向而向四周弥散，即光散射现象。一般将光散射分为两种类型：纯净介质光散射和非纯净介质光散射。
(1)纯净介质光散射：是指光在不含有的任何缺陷的纯净物质中传播依然会有光散射现象。这种现象是任何物质本身固有的，和传播体是否含有缺陷没有任何关系。
(2)非纯净介质光散射：是指光在含有缺陷(如气泡、杂质、裂纹、波纹、划伤、碰伤等)的物质中传播，当光遇到这些缺陷时产生的散射现象。这种散射现象不是物质本身固有的，它的散射光强弱是跟缺陷的性质有关的。其散射光和入射光的频率是相同的，其散射光强的大小也跟入射光的波长大小是有关系的，具体为：
Figure PCTCN2019081552-appb-000001
其中，I sca为散射光强度，λ为入射光波长，a为正整数。
而基于广义的洛伦茨-米氏理论，激光光束(一种相干光)的性质与散射 体相对位置的关系，可表示它们位置关系的参数定义为g n，激光入射到散射体时，当散射体的位置在光束的中心处，这时g n的表达为：
Figure PCTCN2019081552-appb-000002
其中，ω 0为激光光束的激光束腰大小。
那么，当入射的激光光束经过散射体散射后在空间一点P的光强大小为：
Figure PCTCN2019081552-appb-000003
其中，
Figure PCTCN2019081552-appb-000004
为P点以散射体为参考系的空间坐标，r为P点到散射体的距离，θ为P点的散射角，
Figure PCTCN2019081552-appb-000005
为P点的方位角，q为粒径参数，m相对复折射率，ω 0为激光光束的激光束腰大小，I 0为入射光光强。为简化计算，可令
Figure PCTCN2019081552-appb-000006
为0，也就是说，可限定P点在方位角为
Figure PCTCN2019081552-appb-000007
距离为r的圆周上。
此时，P点的光强可表示为：
Figure PCTCN2019081552-appb-000008
其中，a n,b n,τ n,π n为米氏散射系数。
由于在实际检测中m、q是未知的，但是可以通过
Figure PCTCN2019081552-appb-000009
来控制光电传感器在不同空间接收位置得到不同的空间光强组合，即散射体球面上选取多个P点采集散射光强信息，并建立起空间光强与缺陷信息的关联，即可采用理论仿真与实际相结合的方法建立光电传感器采集散射光的相对采集位置(前述P点位置)与散射光强空间分布相对应的数据库模型，然后将在某一相对采集位置P点由光电传感器采集的散射光强与数据库模型中存储的与该相对采集位置P点对应的参考散射光强进行比较，根据差异即可判断该相对采集位置P点采集的散射光强是否为由缺陷引起的散射光，从而确定检材是否存在缺陷以及缺陷的大小。
应用到本发明实施例中，也就是说，光电传感器20与相干光源10以及检材在空间上具有相对采集位置，相对采集位置至少包括散射角和到所述检材的距离。控制器30则用于获取与扫描位置对应的所述散射光强成像；对所述散 射光强成像进行傅里叶变换，得到相应的幅度谱和相位谱，获取所述幅度谱和相位谱的截止频率；所述截止频率与所述扫描位置，以及所述扫描位置对应的相对采集位置对应。
控制器30还用于监测所述截止频率不属于频率阈值范围时的扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；且频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。
参考图2所示，图2展示了材料折射率为0.56，缺陷半径分别为6.6um和13.2um缺陷下空间散射光强分布图。随着散射体大小的增加或变小，空间范围内波峰间的间距值变小，更确切地说两个波峰间的角度值越来越小，将一定范围内空间散射光强的分布经过FFT(傅里叶变换)，对于相同折射率(缺陷材质相同)不同的q值(缺陷大小不同)，随着q值的增大，也就是随着缺陷尺寸的增大，其相频和幅频曲线的截止频率也是随之增大的。
再参考图3和图4所示，图3和图4展示了散射光强分布经过FFT变换后的幅频曲线和相频曲线。由于随着散射体的尺寸变大，即缺陷尺寸变大，固定空间范围内其散射光的截止频率也是单调增加，所以在实际检测过程中可以通过固定空间范围内其散射光的截止频率来判断缺陷大小。在实际检测中只需要将实际接收到的散射光截止频率与理论计算仿真值进行对比就可以判断出缺陷的有无和尺寸。
具体的，在本实施例中，本***还包括载物台40，用于承载检材。如图1所示，载物台还包括正交的X方向和Y方向的运动机构，用于带动检材在X方向和Y方向移动以进行扫描。相干光源和所述光电传感器与所述检材在扫描过程中位置相对固定。
在本实施例中，扫描的过程为，相干光源发出的线型的相干光束，载物台40在X轴或Y轴带动物体在X或Y方向运动，使得相干光束对透明或半透明的建材进行线型扫描，然后通过光电传感器对物体的散射光强成像，对图像进行处理得到物体散射光强分布图，对散射光强分布图进行FFT变换，得到幅频曲线和相频曲线，实时监测被测物体散射光强经FFT变换产生的幅频曲 线信息和相频曲线信息的截止频率，并将该截止频率与前述通过理论值预先计算的相对采集位置与散射光强空间分布相对应的数据库模型中存储的，与该相对采集位置对应的频率阈值范围进行实时比较，若截止频率不在频率阈值范围中，则记录该扫描位置作为缺陷位置。
例如，参考图5所示，当载物台40沿X轴带动检材移动时，当抵达x1位置时，检测到截止频率开始不在相应的频率阈值范围中，直到x2位置时，检测到截止频率恢复在相应的频率阈值范围中，可记录在X轴上，处于x1至x2区间的位置存在缺陷。同样，当载物台40沿Y轴带动检材移动时，当抵达y1位置时，检测到截止频率开始不在相应的频率阈值范围中，直到y2位置时，检测到截止频率恢复在相应的频率阈值范围中，可记录在Y轴上，处于y1至y2区间的位置存在缺陷。那么，即可确定，在检材的四个顶点x1，x2，y1，y2确定的矩形位置存在缺陷。
在另一个实施例中，控制器30用于移动相干光源10和/或光电传感器20以对检材进行扫描。控制器30还用于监测光电传感器20相对于相干光源10和检材的相对采集位置，获取相对采集位置对应的频率阈值范围。
也就是说，可以采用固定的载物台，不通过载物台移动检材而进行扫描，而可通过移动相干光源10来移动扫描线，从而实现对检材的扫描。但对于控制器而言，缺陷识别算法是一致的，只需要获取实时相干光源10与光电传感器20的相对位置即可确定当时光电传感器20采集散射成像的相对采集位置，从而由前述的数据库中读取相应的频率阈值范围，再将其与实时监测的截断频率进行，即可识别检材的缺陷。
在一个实施例中，光电传感器的数量可以为N个，且N大于或等于2。N个光电传感器与所述相干光源以及所述检材在空间上具有N个相对采集位置，而在扫描过程中，对于一扫描位置，即对应有N个相对采集位置。
控制器还用于监测与扫描位置对应的N个相对采集位置采集的散射光强成像对应的N个截止频率，若存在一截止频率不属于相应的频率阈值范围，则记录所述扫描位置为缺陷位置。
也就是说，可设置多个光电传感器，当扫描至一扫描位置时，可在多个相 对采集位置上进行采集，只要存在一个相对采集位置上采集的散射光强分布的截止频率不在数据库中预存的该相对采集位置对应的频率阈值范围内，则判定检材在该扫描位置存在缺陷。这样就避免单一光电传感器采集可能受环境光或其他噪声的影响而导致的漏检的情况，采用多个光电传感器即可在多个散射角度进行检测，从而防止漏检的情况。
控制器30在检材中的缺陷之后，可通过其他方式对检材中的缺陷进行校验，例如，人工复检，或其他方式复检，从而确认缺陷检测的准确性，若出现不准确的情况，则意味着数据库中存储的理论参考值不准确，在这种情况下，可根据复检的情况更新数据库中误检的缺陷处对应的相对采集位置对应的频率阈值范围，从而可更新理论参考值，在进行下一次检测时，则可减少误检，提高检测的准确性。
为解决传统技术中，常用的光学三维扫描和二维成像方法都很难对透明或半透明表面进行微观缺陷检测，漏检率和误检率较高的问题，如图6所示，本发明还提出了一种透明或半透明材料微观缺陷检测方法，该方法的执行依赖于计算机程序，基于前述的控制器30。具体的，该方法包括：
步骤S102：通过相干光束对检材进行扫描。
步骤S104：扫描至一扫描位置时：在相对采集位置采集所述检材的散射光强成像；对所述散射光强成像进行傅里叶变换，得到相应的幅度谱和相位谱，获取所述幅度谱和相位谱的截止频率。
所述相对采集位置至少包括散射角和到所述检材的距离；所述截止频率与所述扫描位置，以及所述扫描位置对应的相对采集位置对应。
步骤S106：监测所述截止频率不属于频率阈值范围时的扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；所述频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。
在一个实施例中，该扫描为线扫描，且扫描方向包括正交的X方向和Y方向。
在一个实施例中，相对采集位置为N个，且N大于或等于2。监测所述截止频率不属于频率阈值范围时的扫描位置作为缺陷位置包括：
对于一扫描位置，若在与所述扫描位置对应的N个相对采集位置采集的散射光强成像对应的N个截止频率中，存在一截止频率不属于相应的频率阈值范围，则记录所述扫描位置为缺陷位置。
在一个实施例中，根据所述缺陷位置确定缺陷之后还包括：对所述缺陷进行校验，根据校验结果更新所述频率阈值范围。
本发明实施例，将具有如下有益效果：
采用上述透明或半透明材料微观缺陷检测***，以及基于该***中的控制器的透明或半透明材料微观缺陷检测方法，对于透明或半透明材料，通过相干光对其进行扫描，在扫描到一扫描位置时，在一定的散射角和距离上采集散射光强分布，并将散射光强分布与根据洛伦茨-米氏理论计算得出参考值进行比较，将散射光强分布不符合参考值的扫描位置记录为缺陷位置，从而在扫描完成后，即可通过整合检材中缺陷位置的集合确定检材中缺陷的大小和类型。上述***和方法由于采集的散射光，不会受到透明或半透明的检材的透光性的影响。同时，由于其将实时采集的散射光强分布与理论计算出的参考值进行比较，因此误检率和漏检率较低。
以上所揭示的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的范围。

Claims (10)

  1. 一种透明或半透明材料微观缺陷检测***，其特征在于，包括：
    相干光源，用于出射相干光束扫描透明或半透明的检材；
    光电传感器，用于采集所述检材的散射光强成像，所述光电传感器与所述相干光源以及所述检材在空间上具有相对采集位置，所述相对采集位置至少包括散射角和到所述检材的距离；
    控制器，用于获取与扫描位置对应的所述散射光强成像；对所述散射光强成像进行傅里叶变换，得到相应的幅频曲线信息和相频曲线信息，获取所述幅频曲线信息和相频曲线信息的截止频率；所述截止频率与所述扫描位置，以及所述扫描位置对应的相对采集位置对应；
    监测所述截止频率不属于频率阈值范围时的扫描位置，将该扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；
    所述频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。
  2. 根据权利要求1所述的透明或半透明材料微观缺陷检测***，其特征在于，所述***还包括载物台，用于承载所述检材；
    所述载物台还包括正交的X方向和Y方向的运动机构，用于带动检材在X方向和Y方向移动以进行扫描；
    所述相干光源和所述光电传感器与所述检材在扫描过程中位置相对固定。
  3. 根据权利要求1所述的透明或半透明材料微观缺陷检测***，其特征在于，所述控制器用于移动所述相干光源和/或所述光电传感器以对所述检材进行扫描；
    所述控制器还用于监测所述光电传感器相对于所述相干光源和所述检材的相对采集位置，获取所述相对采集位置对应的频率阈值范围。
  4. 根据权利要求1所述的透明或半透明材料微观缺陷检测***，其特征在于，所述光电传感器的数量为N个，且N大于或等于2；N个所述光电传感器与所述相干光源以及所述检材在空间上具有N个相对采集位置。
  5. 根据权利要求4所述的透明或半透明材料微观缺陷检测***，其特征 在于，扫描过程中，对于一扫描位置，对应有N个相对采集位置；
    所述控制器还用于监测与扫描位置对应的N个相对采集位置采集的散射光强成像对应的N个截止频率，若存在一截止频率不属于相应的频率阈值范围，则记录所述扫描位置为缺陷位置。
  6. 根据权利要求1所述的透明或半透明材料微观缺陷检测***，其特征在于，所述相干光源为激光光源，以线扫描的方式扫描所述检材。
  7. 一种透明或半透明材料微观缺陷检测方法，基于权利要求1至6所述的任一项的控制器，其特征在于，包括：
    通过相干光束对检材进行扫描；
    扫描至一扫描位置时：在相对采集位置采集所述检材的散射光强成像；对所述散射光强成像进行傅里叶变换，得到相应的幅频曲线信息和相频曲线信息，获取所述幅频曲线信息和相频曲线信息的截止频率；
    所述相对采集位置至少包括散射角和到所述检材的距离；所述截止频率与所述扫描位置，以及所述扫描位置对应的相对采集位置对应；
    监测所述截止频率不属于频率阈值范围时的扫描位置，将该扫描位置作为缺陷位置，根据所述缺陷位置确定缺陷；
    所述频率阈值范围为预先根据洛伦茨-米氏理论计算出的，与所述相对采集位置对应的基于非纯净介质光散射的参考值范围。
  8. 根据权利要求7所述的透明或半透明材料微观缺陷检测方法，其特征在于，所述扫描为线扫描，且扫描方向包括正交的X方向和Y方向。
  9. 根据权利要求7所述的透明或半透明材料微观缺陷检测方法，其特征在于，所述相对采集位置为N个，且N大于或等于2；
    所述监测所述截止频率不属于频率阈值范围时的扫描位置作为缺陷位置包括：
    对于一扫描位置，若在与所述扫描位置对应的N个相对采集位置采集的散射光强成像对应的N个截止频率中，存在一截止频率不属于相应的频率阈值范围，则记录所述扫描位置为缺陷位置。
  10. 根据权利要求7所述的透明或半透明材料微观缺陷检测方法，其特征在于，所述根据所述缺陷位置确定缺陷之后还包括：
    对所述缺陷进行校验，根据校验结果更新所述频率阈值范围。
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