WO2020194737A1 - Method for producing electronic device, and electronic device - Google Patents

Method for producing electronic device, and electronic device Download PDF

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Publication number
WO2020194737A1
WO2020194737A1 PCT/JP2019/013854 JP2019013854W WO2020194737A1 WO 2020194737 A1 WO2020194737 A1 WO 2020194737A1 JP 2019013854 W JP2019013854 W JP 2019013854W WO 2020194737 A1 WO2020194737 A1 WO 2020194737A1
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WO
WIPO (PCT)
Prior art keywords
layer
electronic device
manufacturing
peeling
resin layer
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PCT/JP2019/013854
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French (fr)
Japanese (ja)
Inventor
幸也 西岡
克彦 岸本
Original Assignee
シャープ株式会社
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Application filed by シャープ株式会社 filed Critical シャープ株式会社
Priority to PCT/JP2019/013854 priority Critical patent/WO2020194737A1/en
Publication of WO2020194737A1 publication Critical patent/WO2020194737A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to a method for manufacturing an electronic device and an electronic device.
  • a laminate including a resin layer, a thin transistor layer, a light emitting element layer and the like is formed on a glass substrate, and the back surface of the glass substrate to the lower surface of the resin layer are formed. Is irradiated with a laser beam to peel off the resin layer from the glass substrate. Then, a heat radiating layer containing graphite carbon, copper foil, or the like is bonded to the surface of the resin layer opposite to the surface facing the thin transistor layer via an adhesive layer for heat dissipation of the electronic device.
  • the release layer can be formed as a heat dissipation layer by peeling the resin layer and the release layer from the mother substrate.
  • the heat radiating layer can be formed without the adhesive layer, and the heat radiating property of the electronic device can be improved.
  • FIG. It is a flowchart which shows the manufacturing method of an OLED panel. It is sectional drawing which shows the structure of an OLED panel. It is a top view which shows the manufacturing method of the electronic device of Embodiment 1.
  • FIG. It is a flowchart which shows the manufacturing method of the electronic device of the modification of Embodiment 1. It is a top view which shows the manufacturing method of the electronic device of the modification of Embodiment 1. It is sectional drawing which shows the manufacturing method of the electronic device of the modification of Embodiment 1. It is a top view which shows the manufacturing method of the electronic device of Embodiment 2. It is a top view which shows the manufacturing method of the electronic device of the modification of Embodiment 2.
  • FIG. 3 As a method for manufacturing an electronic device according to an embodiment of the present invention, the manufacturing method shown in FIG. 3 will be taken as an example and will be described with reference to FIGS. 1 to 3.
  • “same layer” means that it is formed by the same process (deposition process)
  • “lower layer” means that it is formed by a process prior to the layer to be compared.
  • “upper layer” means that it is formed in a process after the layer to be compared.
  • FIG. 1 is a flowchart showing a manufacturing method of the electronic device of the first embodiment.
  • FIG. 2 is a cross-sectional view showing a configuration example of a display unit of an electronic device.
  • FIG. 3 is a plan view showing a method of manufacturing an electronic device.
  • an organic EL (Electro Luminescence) display device 2 as an electronic device will be described.
  • a plurality of display areas 41 (that is, an organic EL display device 2) are formed on one translucent substrate (mother substrate) 13. ..
  • a release layer AL is formed on a substrate 13 (step S1, first film forming step).
  • the resin layer 12 is formed so as to cover at least a part of the release layer AL (step S2, second film forming step).
  • the barrier layer 3 is formed so as to cover the entire surface of the resin layer 12 (step S3, third film forming step).
  • a thin transistor layer (also referred to as a TFT layer) 4 above the barrier layer 3 is formed (step S4, fourth film forming step).
  • a top emission type light emitting element layer (including a light emitting layer) 5 is formed (step S5).
  • the sealing layer 6 that covers the light emitting element layer is formed (step S6).
  • the laminated body 7 is cut out and the top film 14 is attached (step S7).
  • the release layer AL or the resin layer 12 is irradiated with light LV through the substrate 13.
  • the resin layer 12 and the peeling layer AL are peeled from the substrate 13 by inserting a blade such as a knife at the interface between the substrate 13 and the resin layer 12 and the peeling layer AL (step S8, peeling step).
  • the lower surface film 10 of FIG. 2 is attached to the lower surface of the resin layer 12 (step S9).
  • the laminate including the bottom film 10, the resin layer 12, the barrier layer 3, the thin transistor layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of individual pieces (step S10, division step). ..
  • the functional film 39 is attached to the obtained pieces (step S11).
  • an electronic circuit board (for example, an IC chip) is mounted on the non-display area of the individual piece to form an electronic device (step S12).
  • the substrate 13 for example, a glass substrate is used.
  • the substrate 13 may be an unused glass substrate, and the used glass substrate that has undergone the first film forming step to the peeling step described later may be reused.
  • the peeling layer AL is substantially completely peeled off, so that the cost of manufacturing the electronic device can be reduced by reusing it.
  • the release layer AL has a thickness of about 1 ⁇ m.
  • the release layer AL is preferably formed on the substrate 13 by a sputtering method or a PVD method.
  • the release layer AL formed by the sputtering method or the PVD method becomes a dense and uniform release layer AL.
  • the release layer AL contains graphite carbon.
  • graphite carbon By using graphite carbon as the release layer AL, the release layer AL bonded to the resin layer 12 can be used as the heat dissipation layer.
  • graphite carbon When graphite carbon is contained as the release layer AL, it is preferable to use graphite carbon formed in a direction in which the layer direction of the graphite carbon is parallel to the direction in which the resin layer 12 and the substrate 13 are laminated. Since the layer direction of graphite carbon is formed in a direction parallel to the direction in which the tree resin layer 12 and the substrate 13 are laminated, in the peeling step, the substrate 13 and the peeling layer AL are formed at the interface between the substrate 13 and the peeling layer AL. Even when the bond is not cut well, it can be peeled between the graphite carbon layers (between the graphite carbon layers) constituting the release layer AL.
  • an adhesive layer that contains graphite carbon as the release layer AL and is used to attach the heat radiation layer to the resin layer 12 by peeling from the substrate 13 in a state where the release layer AL is attached to the resin layer 12.
  • Graphite carbon can be formed as a heat dissipation layer without the need for it. Since the adhesive layer has a lower thermal conductivity than the release layer AL, the heat dissipation of the electronic device can be improved by forming the heat dissipation layer without using the adhesive layer. Further, since graphite carbon has a low thermal conductivity in the interlayer direction, the influence of heat due to the light LV given to the resin layer 12 during light irradiation such as in the peeling step (step S8) can be reduced. Incidentally, graphite carbon has a structure in which carbon surface to SP 2 bonded carbon atoms (graphene) are laminated.
  • Examples of the material of the resin layer 12 include polyimide and polyamide. Examples of the material of the top film 14 in step S7 include polyethylene terephthalate (PET).
  • PET polyethylene terephthalate
  • the barrier layer 3 is a layer that prevents foreign substances such as moisture and oxygen from reaching the thin transistor layer 4 and the light emitting device layer 5, and is, for example, a silicon oxide film, a silicon nitride film, or a silicon nitride film formed by a CVD method. It can be composed of a silicon oxynitride film or a laminated film thereof.
  • the thin transistor layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE above the inorganic insulating film 16, and a layer above the gate electrode GE.
  • the thin layer transistor Tr is configured to include the flattening film 21 of the upper layer, the semiconductor film 15, the inorganic insulating film 16, and the gate electrode GE.
  • the semiconductor film 15 is composed of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor.
  • LTPS low temperature polysilicon
  • FIG. 2 the thin layer transistor Tr having the semiconductor film 15 as a channel is shown in the top gate structure, but may have a bottom gate structure (for example, when the channel of the thin layer transistor is an oxide semiconductor).
  • the gate electrode GE, the capacitance electrode CE, and the source wiring SH are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu). It is composed of a single-layer film or a laminated film of a metal containing at least one.
  • the inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
  • SiOx silicon oxide
  • SiNx silicon nitride
  • the flattening film (interlayer insulating film) 21 can be made of a coatable organic material such as polyimide or acrylic.
  • the light emitting element layer 5 (for example, the organic light emitting diode layer) has an anode 22 which is a layer above the flattening film 21, an anode edge cover 23 which covers the edge of the anode 22, and an EL (electroluminescence) which is a layer above the anode edge cover 23. )
  • a light emitting element (for example, OLED: organic light emitting diode) including a layer 24 and a cathode 25 above the EL layer 24 and including an island-shaped anode 22, an EL layer 24, and a cathode 25 for each subpixel.
  • the anode edge cover 23 (also referred to as a bank) can be made of a coatable organic material such as polyimide or acrylic.
  • the EL layer 24 is composed of, for example, laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side.
  • the light emitting layer is formed in an island shape for each subpixel by a vapor deposition method or an inkjet method, but one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are solid. It may be a common layer of, or it may be non-formed.
  • the anode 22 is composed of, for example, a laminate of ITO (Indium Tin Oxide) and an alloy containing Ag, and has light reflectivity.
  • the cathode 25 can be made of a translucent conductive material such as MgAg alloy (ultra-thin film) or ITO (Indium Tin Oxide).
  • the driving current between the anode 22 and the cathode 25 causes holes and electrons to recombine in the EL layer 24, and the excitons generated thereby fall to the ground state, so that light is emitted. It is released. Since the anode 22 is light-reflecting and the cathode 25 is translucent, the display light DL emitted from the EL layer 24 faces upward and becomes top emission.
  • the light emitting element layer 5 is not limited to the case of forming an OLED element, and may be formed of an inorganic light emitting diode or a quantum dot light emitting diode.
  • the sealing layer 6 is translucent, and has an inorganic sealing film 26 covering the cathode 25, an organic sealing film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 covering the organic sealing film 27. And include.
  • the sealing layer 6 covering the light emitting element layer 5 prevents foreign substances such as water and oxygen from penetrating into the light emitting element layer 5.
  • Each of the inorganic sealing films 26 and 28 can be composed of, for example, a silicon oxide film, a silicon nitride film, a silicon nitride film, or a laminated film thereof formed by a CVD method.
  • the organic sealing film 27 is a translucent organic film thicker than the inorganic sealing films 26 and 28, and can be made of a coatable organic material such as acrylic.
  • the lower surface film 10 is for realizing protection of the back surface of the display device by attaching it to the lower surface of the resin layer 12 after peeling off the support substrate, and examples of the material thereof include PET. Since the lower surface film 10 contains fine powder of an inorganic compound (AlN, diamond, etc.) having excellent thermal conductivity, the lower surface film 10 does not reduce the heat dissipation from the release layer AL, and the display device 2 It is possible to add a function that can dissipate heat to the outside of the.
  • the functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
  • step S1 first film formation step of FIG. 1
  • a release layer AL is formed on the substrate 13.
  • the display region 41 which will be described later, is formed so as to be laminated on the release layer AL.
  • step S2 (second film formation step) of FIG. 1
  • the resin layer 12 is formed so as to cover at least a part of the release layer AL.
  • the resin layer 12 is a portion that comes into contact with the substrate 13 and exists around a portion that contacts the release layer AL and a portion that contacts the release layer AL. And.
  • step S3 third film forming step of FIG. 1
  • the barrier layer 3 is formed so as to cover the upper surface and the end surface of the resin layer 12. As a result, it is possible to prevent water from penetrating into the resin layer 12, and it is possible to solve the problem that the release layer AL and the resin layer 12 are (unintentionally) separated by the step S8. ..
  • an electronic circuit layer is formed on the upper layer of the barrier layer 3.
  • the electronic circuit layer may be a thin transistor layer 4 or a touch panel layer (not shown).
  • the electronic circuit layer is a touch panel layer, it is not necessary to form the light emitting element layer 5 and the sealing layer 6 on the upper layer.
  • step S8 peeling step of FIG. 1
  • the resin layer 12 and the peeling layer AL are peeled from the substrate 13 at the molecular level by irradiating light LV from the lower surface of the substrate 13.
  • the release of the release layer AL from the substrate 13 is considered to be due to the difference in the bonding force of the graphite carbon.
  • graphite carbon it is considered that the bonds between carbons between layers are bonded by van der Waals force, and the bonds between carbons within the layer (inside the layer) are bonded by covalent bonds. There is. Further, when polyimide is used as the resin layer 12, the graphite carbon and the polyimide are bonded by a SAM bond (a bond having a stronger bonding force than the bonding force between layers in graphite carbon).
  • graphite carbon when used as the release layer AL, it is peeled off without remaining on the substrate 13 due to the difference in the bonding force of the graphite carbon, or is peeled off from the substrate 13 between the layers of the graphite carbon. As a result, the graphite carbon remains in close contact with the resin layer 12, so that it can be used as a heat dissipation layer.
  • the release layer AL When the release layer AL is irradiated with light LV, the bonding force between the substrate 13 and the release layer AL is reduced, and the release layer AL and the resin layer 12 are easily peeled from the substrate 13.
  • the resin layer 12 when the resin layer 12 is irradiated with light LV, the resin layer 12 is burned by the heat of the light LV, the bonding force between the substrate 13 and the resin layer 12 is reduced, and the resin layer 12 is easily peeled from the substrate 13. Become.
  • the resin layer 12 is not directly irradiated with light LV, and the resin layer 12 is not heated. Therefore, at the location where the resin layer 12 and the release layer AL come into contact with each other, it is possible to suppress the generation of carbides in the resin layer 12 due to light LV and the generation of traces of the resin layer 12 due to light LV. Then, by reducing the generation of traces or the generation of carbides due to irradiation with light LV, it is possible to suppress the clean environment (manufacturing process) from being contaminated by carbides.
  • the resin layer 12 is burned by irradiating the light LV from the lower surface of the substrate 13, and carbides of the resin layer 12 are generated on the lower surface of the resin layer 12. Since carbides are generated on the lower surface of the resin layer 12, when the resin layer 12 and the substrate 13 are peeled off, it becomes easy to insert a blade such as a knife at the interface between the resin layer 12 and the substrate 13. As a result, it becomes easy to create a trigger for peeling the substrate 13 from the resin layer 12.
  • the portion where the resin layer 12 and the substrate 13 come into contact with each other may be provided on the entire circumference of the portion where the resin layer 12 and the release layer AL come into contact with each other, or may be provided at least partially.
  • the release layer AL is provided in the present embodiment, unlike the above-mentioned conventional example, it is possible to prevent the occurrence of a defect in the above-mentioned delamination process and improve the yield in the manufacture of the electronic device. Can be done. Further, the release layer AL remains in the resin layer 12 and acts as a heat radiating layer, so that the steps required to form the heat radiating layer can be reduced. Further, when the release layer AL is used as the heat dissipation layer, the adhesive layer having lower thermal conductivity than the release layer AL is not formed, so that the heat dissipation in the electronic device can be improved.
  • the optical LV is preferably laser light.
  • the device for irradiating the laser beam may be, for example, an excimer laser irradiation device using XeCl gas or the like, a solid-state laser irradiation device using YAG (Yttrium Aluminum Garnet) or the like.
  • YAG Yttrium Aluminum Garnet
  • the excimer laser light is suitable for a line-shaped light source because the beam shape has high uniformity in the longitudinal direction.
  • the lower surface film 10 is attached to the resin layer 12 and the release layer AL.
  • the surface of the resin layer 12 and the release layer AL to which the lower surface film 10 is attached may have a difference in thickness between the resin layer 12 and the release layer AL in the stacking direction.
  • the difference in thickness between the resin layer 12 and the release layer AL in the lamination direction is smaller than the thickness in the lamination direction of the lower surface film 10, the difference in thickness in the lamination direction by attaching the lower surface film 10 Is gone.
  • step S10 dividing step of FIG. 1
  • the laminated body 7 including the barrier layer 3, the resin layer 12, and the substrate 13 is cut in the thickness direction of the laminated body 7 so as to pass through the end portion of the resin layer 12.
  • the end faces of the barrier layer 3 and the resin layer 12 are flush with each other.
  • the substrate 13 may be cut into strips, and the substrate 13 may be cut to a desired size (step S25). Then, after cutting, the substrate 13 is peeled off (step S26).
  • the resin layer 12 can come into contact with air and contain moisture. As a result, the adhesion between the resin layer 12 and the substrate 13 is lowered. As a result, even when an unreasonable tensile stress is generated in the resin layer 12 in the region where the substrate 13 cannot be irradiated with the laser, it is possible to prevent the resin layer 12 from being broken or other defects. Further, since the release layer AL (heat dissipation layer) is bonded to the resin layer 12, it is not necessary to form the heat dissipation layer. Further, since the heat radiating layer is formed without interposing the adhesive layer, the heat radiating property in the electronic device can be improved.
  • AL heat dissipation layer
  • FIG. 7 shows a case where the release layer AL is not formed in the display region 41.
  • the release layer AL may be formed in the display area 41.
  • the release layer AL heat dissipation layer
  • the heat radiating layer is formed without interposing the adhesive layer, the heat radiating property of the electronic device can be improved.
  • a terminal portion (not shown) is formed which is connected to the wiring provided in the electronic circuit layer and inputs a signal from the outside. Further, in the terminal portion, the wiring and the wiring for transmitting the electric signal are connected to a plurality of terminals provided in the terminal portion.
  • the release layer AL may be provided in the terminal region 43.
  • the release layer AL heat dissipation layer
  • the heat radiating layer is formed without interposing the adhesive layer, the heat radiating property of the electronic device can be improved.
  • the touch panel TP includes a touch panel unit TP1 and a terminal area 43.
  • the touch panel unit TP1 is a portion placed on the display surface of the organic EL display device 2 and actually has a touch panel function (in other words, a portion that accepts a user's operation). Further, in the touch panel TP, since the terminal region 43 in which the wiring connecting to each electrode is formed is outside the display region, it is not necessary to provide the release layer AL in the terminal region 43.
  • FIG. 10 is a plan view showing a method of manufacturing the display device of the third embodiment
  • FIG. 11 is a cross-sectional view showing the method of manufacturing the display device of the third embodiment.
  • the substrate and the release layer were peeled off (step 26).
  • the substrate and the release layer are peeled off (step S8), they may be separated (step S10).
  • the release layer AL is formed on the large-sized substrate 13, and the island-shaped first portion 12a (is formed on the release layer AL.
  • a resin layer 12 including a first display region 41a) and an island-shaped second portion 12b (corresponding to a second display region 41b) is formed.
  • a common barrier layer 3 is formed so as to cover the first part 12a and the second part 12b, and then a thin transistor layer including a region 4a overlapping the first part 12a and a region 4b overlapping the second part 12b is formed.
  • a light emitting element layer including a region 5a overlapping the first part 12a and a region 5b overlapping the second part 12b is formed, and a sealing layer 6 covering the light emitting element layer is formed.
  • a top film is formed on the first laminated body 7A including the first portion 12a and the barrier layer 3 on the divided substrate 13a and the second laminated body 7B including the second portion 12b and the barrier layer 3 on the divided substrate 13b.
  • the first laminated body 7A is cut in the thickness direction so as to pass through the end portion of the first portion 12a, and the second laminated body 7B is cut into the second laminated body 7B.
  • a cutting step of cutting in the thickness direction is performed so as to pass through the ends of the two parts 12b.
  • the release layer AL located below each of the first laminated body 7A and the second laminated body 7B is irradiated with light LV, and the first part 12a and the second laminated body 7B are separated.
  • the layer AL is peeled from the split substrate 13a, and the second part 12b and the peeled layer AL are peeled from the split substrate 13b.
  • the first laminated body 7A attached to the divided substrate 13a (glass substrate) and the second laminated body 7B attached to the divided substrate 13b (glass substrate) are separately transported and stored. Can be done.
  • the first laminated body 7A and the second laminated body 7B are much easier to transport and store than the laminated body in a state of being peeled off from the glass substrate (flexible state).
  • the barrier layer 3 covers the upper surfaces and end faces of the first portion 12a and the second portion 12b of the resin layer, foreign matter such as moisture is contained in the resin layers 12a and 12b. It is possible to prevent permeation, and it is said that the substrate 13a and the substrate 13b and the first part 12a or the second part 12b of the resin layer are (unintentionally) separated by the step S8 (peeling step). The problem can be solved. For example, it is possible to prevent an accident in which the first portion 12a of the resin layer is peeled off from the substrate 13a during the transportation work of the first laminated body 7A, and the first laminated body 7A falls and is damaged.
  • the resin layer 12 is separated and formed into two parts, the first part 12a and the second part 12b, but the present invention is not limited to this, and the resin layer 12 may be divided into three or more parts. Further, in steps S4 to S6, a device corresponding to a plurality of panels is formed on the first part 12a, and a device corresponding to the plurality of panels is formed on the second part 12b, and in step S10, the first stacking is performed. A plurality of electronic devices (flexible panels) may be obtained from each of the body 7A and the second laminated body 7B. Further, the first display area 41a and the second display area 41b may be further divided into a plurality of display areas.
  • a flexible backlight unit 50 is arranged on the back surface of the resin layer 12, the resin layer 12 is made of transparent polyimide, a pixel electrode PE is formed on the thin transistor layer 4, and the pixel electrode PE is formed.
  • a liquid crystal layer 35 that functions as a shutter is arranged between the flexible facing substrate 37 (color filter substrate).
  • the electro-optical element included in the electronic device according to the present embodiment is not particularly limited.
  • the display device according to the present embodiment include an organic EL display provided with an OLED (Organic Light Emitting Diode) as an electro-optical element, an inorganic EL display provided with an inorganic light emitting diode as an electro-optical element, and electro-optical.
  • the element include a QLED display provided with a QLED (Quantum dot Light Emitting Diode).
  • the present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment.
  • a method for manufacturing an electronic device comprising a peeling step of peeling the peeling layer and the resin layer.
  • Mode 2 The method for manufacturing an electronic device according to mode 1, wherein in the second film forming step, a resin layer is laminated so as to cover the entire surface of the peeling layer.
  • a dividing step of dividing the laminate including the resin layer and the barrier layer in the thickness direction of the laminate so as to pass through the end portion of the resin layer is included.
  • Mode 4 The method for manufacturing an electronic device according to mode 3, wherein in the dividing step, the release layer and the mother substrate are divided in addition to the laminated body.
  • Mode 5 The method for manufacturing an electronic device according to mode 3 or 4, wherein in the first film forming step, the release layer is formed so as to be superimposed on the installation position of the alignment marker in the dividing step.
  • any one of the modes 3 to 5 which is connected to the wiring provided in the electronic circuit layer and forms the peeling layer so as to be superimposed on the terminal region where a signal is input from the outside. The method of manufacturing the electronic device described.
  • a resin layer including the island-shaped first part and the island-shaped second part is formed, and in the third film forming step, the first part and the second part are covered in common.
  • a barrier layer is formed, and in the fourth film forming step, the electronic circuit layer including a region overlapping the first part and a region overlapping the second part is formed, and the fourth forming step and the peeling step are performed.
  • the barrier layer, the peeling layer, and the mother substrate so as to pass through a portion outside the first part and the second part in a plan view and in contact with the barrier layer and the peeling layer.
  • the first laminated body including the first part and the barrier layer is cut in the thickness direction of the first laminated body so as to pass through the end portion of the first part.
  • Mode 9 The item according to any one of Modes 1 to 8, wherein after the peeling step, the resin layer and the mother substrate from which the peeling layer is peeled are sequentially subjected to the first film forming step to the peeling step. How to make an electronic device.
  • Mode 10 The method for manufacturing an electronic device according to any one of modes 1 to 9, wherein the release layer contains graphite carbon.
  • Mode 11 The method for manufacturing an electronic device according to any one of modes 1 to 10, wherein the laser beam irradiating the release layer is an excimer laser.
  • Mode 12 The method for manufacturing an electronic device according to any one of modes 1 to 10, wherein the laser beam irradiating the release layer is a solid-state laser.
  • Module 13 The method for manufacturing an electronic device according to any one of aspects 1 to 12, wherein the electronic circuit layer is a thin transistor layer.
  • Mode 14 The method for manufacturing an electronic device according to mode 13, wherein the electronic circuit layer has a light emitting element layer formed above the thin transistor layer.
  • Mode 15 The method for manufacturing an electronic device according to mode 12, wherein a liquid crystal layer is formed on the electronic circuit layer above the thin transistor layer.
  • Module 16 The method for manufacturing an electronic device according to any one of aspects 1 to 12, wherein the electronic circuit layer is a touch panel layer.
  • Mode 17 The method for manufacturing an electronic device according to any one of modes 1 to 16, wherein the release layer is formed by a PVD method or a sputtering method.
  • Module 18 An electronic device in which a resin layer, a barrier layer, and an electronic circuit layer are sequentially laminated, and the resin layer comes into contact with graphite carbon on a surface of the resin layer opposite to the surface facing the barrier layer. Electronic devices.

Abstract

The present invention provides a method for producing an electronic device, wherein: an island-shaped release layer (AL) is formed on a substrate (13); a resin layer (12) is superposed thereon so as to cover the entire surface of the release layer (AL); a barrier layer (3) is formed so as to cover the resin layer (12); an electronic circuit layer is formed on top of the barrier layer (3); and the release layer (AL) and the resin layer (12) are separated from the substrate (13).

Description

電子デバイスの製造方法および電子デバイスManufacturing method of electronic device and electronic device
　本発明は、電子デバイスの製造方法および電子デバイスに関する。 The present invention relates to a method for manufacturing an electronic device and an electronic device.
　可撓性を有する電子デバイスを製造する場合では、例えば、ガラス基板上に、樹脂層、薄層トランジスタ層、および発光素子層等を含む積層体を形成し、ガラス基板の裏面から樹脂層の下面にレーザ光を照射してガラス基板から樹脂層を剥離する。そして、樹脂層における薄層トランジスタ層と対向する面の反対側の面には、電子デバイスの放熱のために、粘着層を介してグラファイトカーボンまたは銅箔等を含む放熱層が貼合される。 In the case of manufacturing a flexible electronic device, for example, a laminate including a resin layer, a thin transistor layer, a light emitting element layer and the like is formed on a glass substrate, and the back surface of the glass substrate to the lower surface of the resin layer are formed. Is irradiated with a laser beam to peel off the resin layer from the glass substrate. Then, a heat radiating layer containing graphite carbon, copper foil, or the like is bonded to the surface of the resin layer opposite to the surface facing the thin transistor layer via an adhesive layer for heat dissipation of the electronic device.
特開２００４－３４９５４３号公報（２００４年１２月９日公開）Japanese Unexamined Patent Publication No. 2004-349543 (published on December 9, 2004)
　レーザ光によるデラミネーションの工程によってガラス基板から樹脂層を剥離する前記従来の手法では、レーザ光の熱により不具合（例えば樹脂層が炭化した炭化物が樹脂層またはガラス基板へ付着すること等）が発生するという問題がある。また、放熱層は、当該放熱層より熱伝導性の低い粘着層を介して樹脂層へ貼合されるため、電子デバイスの放熱層を用いた放熱性について、改善の余地があった。 In the conventional method of peeling the resin layer from the glass substrate by the process of delamination by the laser beam, a defect (for example, carbonized carbonized resin layer adheres to the resin layer or the glass substrate) occurs due to the heat of the laser beam. There is a problem of doing. Further, since the heat radiating layer is bonded to the resin layer via an adhesive layer having a lower thermal conductivity than the heat radiating layer, there is room for improvement in heat radiating property using the heat radiating layer of the electronic device.
　母基板上に島状の剥離層を形成する第１成膜工程と、前記剥離層の少なくとも一部を覆うように、樹脂層を積層させる第２成膜工程と、前記樹脂層を覆うように、バリア層を形成する第３成膜工程と、前記バリア層の上層に電子回路層を形成する第４成膜工程と、前記剥離層に対してレーザ光を照射し、前記母基板から、前記剥離層および前記樹脂層を剥離する剥離工程と、を含む。 A first film forming step of forming an island-shaped peeling layer on a mother substrate, a second film forming step of laminating resin layers so as to cover at least a part of the peeling layer, and covering the resin layer. The third film forming step of forming the barrier layer, the fourth film forming step of forming the electronic circuit layer on the upper layer of the barrier layer, and the release layer being irradiated with laser light, from the mother substrate, the above. It includes a peeling step of peeling the peeling layer and the resin layer.
　母基板から樹脂層および剥離層を剥離させることにより剥離層を放熱層として形成できる。それにより、放熱層を粘着層なしに形成することができ、電子デバイスの放熱性を向上させることができる。 The release layer can be formed as a heat dissipation layer by peeling the resin layer and the release layer from the mother substrate. As a result, the heat radiating layer can be formed without the adhesive layer, and the heat radiating property of the electronic device can be improved.
ＯＬＥＤパネルの製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of an OLED panel. ＯＬＥＤパネルの構成を示す断面図である。It is sectional drawing which shows the structure of an OLED panel. 実施形態１の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of Embodiment 1. FIG. 実施形態１の変形例の電子デバイスの製造方法を示すフローチャートである。It is a flowchart which shows the manufacturing method of the electronic device of the modification of Embodiment 1. 実施形態１の変形例の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of the modification of Embodiment 1. 実施形態１の変形例の電子デバイスの製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the electronic device of the modification of Embodiment 1. 実施形態２の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of Embodiment 2. 実施形態２の変形例の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of the modification of Embodiment 2. 実施形態２の変形例の電子デバイスの表示部の別構成を示す断面図である。It is sectional drawing which shows another structure of the display part of the electronic device of the modification of Embodiment 2. 実施形態３の電子デバイスの製造方法を示す平面図である。It is a top view which shows the manufacturing method of the electronic device of Embodiment 3. 実施形態３の電子デバイスの製造方法を示す断面図である。It is sectional drawing which shows the manufacturing method of the electronic device of Embodiment 3. 電子デバイスの表示部の別構成を示す断面図である。It is sectional drawing which shows another structure of the display part of an electronic device.
　〔実施形態１〕
　本発明の一実施の形態に係る電子デバイスの製造方法として、図３に示す製造方法を例にとり、図１～３を参照し説明する。以下においては、「同層」とは同一のプロセス（成膜工程）にて形成されていることを意味し、「下層」とは、比較対象の層よりも先のプロセスで形成されていることを意味し、「上層」とは比較対象の層よりも後のプロセスで形成されていることを意味する。 [Embodiment 1]
As a method for manufacturing an electronic device according to an embodiment of the present invention, the manufacturing method shown in FIG. 3 will be taken as an example and will be described with reference to FIGS. 1 to 3. In the following, "same layer" means that it is formed by the same process (deposition process), and "lower layer" means that it is formed by a process prior to the layer to be compared. And "upper layer" means that it is formed in a process after the layer to be compared.
　図１は、実施形態１の電子デバイスの製造方法を示すフローチャートである。図２は電子デバイスの表示部の構成例を示す断面図である。図３は、電子デバイスの製造方法を示す平面図である。なお、以下の説明では、電子デバイスとしての有機ＥＬ（Electro Luminescence：エレクトロルミネッセンス）表示装置２を製造する場合について説明する。 FIG. 1 is a flowchart showing a manufacturing method of the electronic device of the first embodiment. FIG. 2 is a cross-sectional view showing a configuration example of a display unit of an electronic device. FIG. 3 is a plan view showing a method of manufacturing an electronic device. In the following description, a case of manufacturing an organic EL (Electro Luminescence) display device 2 as an electronic device will be described.
　実施形態１に係る電子デバイスは、図３に示すように、１枚の透光性を備えた基板（母基板）１３に複数の表示領域４１（つまり、有機ＥＬ表示装置２）が形成される。 In the electronic device according to the first embodiment, as shown in FIG. 3, a plurality of display areas 41 (that is, an organic EL display device 2) are formed on one translucent substrate (mother substrate) 13. ..
　実施形態１に係る電子デバイスの製造方法は、基板１３に剥離層ＡＬを形成する（ステップＳ１、第１成膜工程）。次いで、剥離層ＡＬの少なくとも一部を覆うように樹脂層１２を形成する（ステップＳ２、第２成膜工程）。次いで、樹脂層１２の全面を覆うように、バリア層３を形成する（ステップＳ３、第３成膜工程）。次いで、バリア層３よりも上層の薄層トランジスタ層（ＴＦＴ層とも称する）４を形成する（ステップＳ４、第４成膜工程）。次いで、トップエミッション型の発光素子層（発光層を含む）５を形成する（ステップＳ５）。次いで、発光素子層を覆う封止層６を形成する（ステップＳ６）。次いで、積層体７の切り出しおよび上面フィルム１４の貼り付けを行う（ステップＳ７）。 In the method for manufacturing an electronic device according to the first embodiment, a release layer AL is formed on a substrate 13 (step S1, first film forming step). Next, the resin layer 12 is formed so as to cover at least a part of the release layer AL (step S2, second film forming step). Next, the barrier layer 3 is formed so as to cover the entire surface of the resin layer 12 (step S3, third film forming step). Next, a thin transistor layer (also referred to as a TFT layer) 4 above the barrier layer 3 is formed (step S4, fourth film forming step). Next, a top emission type light emitting element layer (including a light emitting layer) 5 is formed (step S5). Next, the sealing layer 6 that covers the light emitting element layer is formed (step S6). Next, the laminated body 7 is cut out and the top film 14 is attached (step S7).
　次いで、基板１３越しに剥離層ＡＬまたは樹脂層１２に光ＬＶを照射する。そして、基板１３と、樹脂層１２および剥離層ＡＬと、の界面にナイフ等の刃を挿入することにより、基板１３から樹脂層１２および剥離層ＡＬを剥離する（ステップＳ８、剥離工程）。 Next, the release layer AL or the resin layer 12 is irradiated with light LV through the substrate 13. Then, the resin layer 12 and the peeling layer AL are peeled from the substrate 13 by inserting a blade such as a knife at the interface between the substrate 13 and the resin layer 12 and the peeling layer AL (step S8, peeling step).
　次いで、樹脂層１２の下面に、図２の下面フィルム１０を貼り付ける（ステップＳ９）。次いで、下面フィルム１０、樹脂層１２、バリア層３、薄層トランジスタ層４、発光素子層５、封止層６を含む積層体を分断し、複数の個片を得る（ステップＳ１０、分断工程）。次いで、得られた個片に機能フィルム３９を貼り付ける（ステップＳ１１）。次いで、個片の非表示領域に電子回路基板（例えば、ＩＣチップ）をマウントして電子デバイスとする（ステップＳ１２）。なお、前記各ステップは、後述の電子デバイス製造装置が行う。 Next, the lower surface film 10 of FIG. 2 is attached to the lower surface of the resin layer 12 (step S9). Next, the laminate including the bottom film 10, the resin layer 12, the barrier layer 3, the thin transistor layer 4, the light emitting element layer 5, and the sealing layer 6 is divided to obtain a plurality of individual pieces (step S10, division step). .. Next, the functional film 39 is attached to the obtained pieces (step S11). Next, an electronic circuit board (for example, an IC chip) is mounted on the non-display area of the individual piece to form an electronic device (step S12). Each of the above steps is performed by an electronic device manufacturing apparatus described later.
　基板１３には、例えばガラス基板が用いられる。基板１３は、未使用のガラス基板であってよく、後述する第１成膜工程～剥離工程までを実施した使用済みのガラス基板を再度利用してよい。後述する第１成膜工程～剥離工程までを実施したガラス基板では、剥離層ＡＬが略完全に剥離しているため、再利用することにより、電子デバイスを製造するコストを低減できる。 For the substrate 13, for example, a glass substrate is used. The substrate 13 may be an unused glass substrate, and the used glass substrate that has undergone the first film forming step to the peeling step described later may be reused. In the glass substrate obtained from the first film forming step to the peeling step described later, the peeling layer AL is substantially completely peeled off, so that the cost of manufacturing the electronic device can be reduced by reusing it.
　剥離層ＡＬは、１μｍ程度の厚みを有する。剥離層ＡＬは、スパッタリング法、またはＰＶＤ法により基板１３に形成されることが好適である。スパッタリング法、またはＰＶＤ法により形成された剥離層ＡＬは、緻密で均一な剥離層ＡＬとなる。 The release layer AL has a thickness of about 1 μm. The release layer AL is preferably formed on the substrate 13 by a sputtering method or a PVD method. The release layer AL formed by the sputtering method or the PVD method becomes a dense and uniform release layer AL.
　剥離層ＡＬは、グラファイトカーボンを含むことが好適である。グラファイトカーボンを剥離層ＡＬとして用いることで、樹脂層１２に貼合した剥離層ＡＬを放熱層とすることができる。 It is preferable that the release layer AL contains graphite carbon. By using graphite carbon as the release layer AL, the release layer AL bonded to the resin layer 12 can be used as the heat dissipation layer.
　剥離層ＡＬとしてグラファイトカーボンを含む場合において、グラファイトカーボンの層方向が、樹脂層１２と基板１３とが積層する方向に並行な方向に形成されたグラファイトカーボンを用いることが好適である。グラファイトカーボンの層方向が樹樹脂層１２と基板１３とが積層する方向に並行な方向に形成されることにより、剥離工程において、基板１３と剥離層ＡＬと界面において、基板１３と剥離層ＡＬとの結合がうまく切断できなかった場合であっても、剥離層ＡＬを構成するグラファイトカーボンの層間（グラファイトカーボンの層と層との間）で剥離することができる。 When graphite carbon is contained as the release layer AL, it is preferable to use graphite carbon formed in a direction in which the layer direction of the graphite carbon is parallel to the direction in which the resin layer 12 and the substrate 13 are laminated. Since the layer direction of graphite carbon is formed in a direction parallel to the direction in which the tree resin layer 12 and the substrate 13 are laminated, in the peeling step, the substrate 13 and the peeling layer AL are formed at the interface between the substrate 13 and the peeling layer AL. Even when the bond is not cut well, it can be peeled between the graphite carbon layers (between the graphite carbon layers) constituting the release layer AL.
　剥離層ＡＬとしてグラファイトカーボンを含み、かつ、剥離層ＡＬが樹脂層１２に貼合した状態で基板１３から剥離することにより、放熱層を樹脂層１２に貼合するために用いる粘着層を使用せずに、グラファイトカーボンを放熱層として形成できる。粘着層は、剥離層ＡＬに比べ熱伝導率が低いため、粘着層を使用せず放熱層を形成することにより電子デバイスの放熱性を向上させることができる。さらに、グラファイトカーボンは、層間方向の熱伝導率が低いため、剥離工程（ステップＳ８）などの光照射時に樹脂層１２へ与える光ＬＶによる熱の影響を小さくできる。なお、グラファイトカーボンは、炭素が面状にＳＰ２結合した炭素原子（グラフェン）が積層した構造である。 Use an adhesive layer that contains graphite carbon as the release layer AL and is used to attach the heat radiation layer to the resin layer 12 by peeling from the substrate 13 in a state where the release layer AL is attached to the resin layer 12. Graphite carbon can be formed as a heat dissipation layer without the need for it. Since the adhesive layer has a lower thermal conductivity than the release layer AL, the heat dissipation of the electronic device can be improved by forming the heat dissipation layer without using the adhesive layer. Further, since graphite carbon has a low thermal conductivity in the interlayer direction, the influence of heat due to the light LV given to the resin layer 12 during light irradiation such as in the peeling step (step S8) can be reduced. Incidentally, graphite carbon has a structure in which carbon surface to SP 2 bonded carbon atoms (graphene) are laminated.
　樹脂層１２の材料としては、例えば、ポリイミド、ポリアミド等が挙げられる。ステップＳ７の上面フィルム１４の材料としては、例えばポリエチレンテレフタレート（ＰＥＴ）が挙げられる。 Examples of the material of the resin layer 12 include polyimide and polyamide. Examples of the material of the top film 14 in step S7 include polyethylene terephthalate (PET).
　バリア層３は、水分、酸素等の異物が薄層トランジスタ層４や発光素子層５に到達することを防ぐ層であり、例えば、ＣＶＤ法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。 The barrier layer 3 is a layer that prevents foreign substances such as moisture and oxygen from reaching the thin transistor layer 4 and the light emitting device layer 5, and is, for example, a silicon oxide film, a silicon nitride film, or a silicon nitride film formed by a CVD method. It can be composed of a silicon oxynitride film or a laminated film thereof.
　薄層トランジスタ層４は、半導体膜１５と、半導体膜１５よりも上層の無機絶縁膜１６（ゲート絶縁膜）と、無機絶縁膜１６よりも上層のゲート電極ＧＥと、ゲート電極ＧＥよりも上層の無機絶縁膜１８と、無機絶縁膜１８よりも上層の容量電極ＣＥと、容量電極ＣＥよりも上層の無機絶縁膜２０と、無機絶縁膜２０よりも上層のソース配線ＳＨと、ソース配線ＳＨよりも上層の平坦化膜２１とを含み、半導体膜１５、無機絶縁膜１６、およびゲート電極ＧＥを含むように薄層トランジスタＴｒが構成される。 The thin transistor layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE above the inorganic insulating film 16, and a layer above the gate electrode GE. The inorganic insulating film 18, the capacitive electrode CE above the inorganic insulating film 18, the inorganic insulating film 20 above the capacitive electrode CE, the source wiring SH above the inorganic insulating film 20, and the source wiring SH above the inorganic insulating film 20. The thin layer transistor Tr is configured to include the flattening film 21 of the upper layer, the semiconductor film 15, the inorganic insulating film 16, and the gate electrode GE.
　半導体膜１５は、例えば低温ポリシリコン（ＬＴＰＳ）あるいは酸化物半導体で構成される。なお、図２では、半導体膜１５をチャネルとする薄層トランジスタＴｒがトップゲート構造で示されているが、ボトムゲート構造でもよい（例えば、薄層トランジスタのチャネルが酸化物半導体の場合）。 The semiconductor film 15 is composed of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor. In FIG. 2, the thin layer transistor Tr having the semiconductor film 15 as a channel is shown in the top gate structure, but may have a bottom gate structure (for example, when the channel of the thin layer transistor is an oxide semiconductor).
　ゲート電極ＧＥ、容量電極ＣＥ、ソース配線ＳＨは、例えば、アルミニウム（Ａｌ）、タングステン（Ｗ）、モリブデン（Ｍｏ）、タンタル（Ｔａ）、クロム（Ｃｒ）、チタン（Ｔｉ）、銅（Ｃｕ）の少なくとも１つを含む金属の単層膜あるいは積層膜によって構成される。 The gate electrode GE, the capacitance electrode CE, and the source wiring SH are made of, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), and copper (Cu). It is composed of a single-layer film or a laminated film of a metal containing at least one.
　無機絶縁膜１６・１８・２０は、例えば、ＣＶＤ法によって形成された、酸化シリコン（ＳｉＯｘ）膜あるいは窒化シリコン（ＳｉＮｘ）膜またはこれらの積層膜によって構成することができる。 The inorganic insulating films 16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, or a laminated film thereof formed by a CVD method.
　平坦化膜（層間絶縁膜）２１は、例えば、ポリイミド、アクリル等の塗布可能な有機材料によって構成することができる。 The flattening film (interlayer insulating film) 21 can be made of a coatable organic material such as polyimide or acrylic.
　発光素子層５（例えば、有機発光ダイオード層）は、平坦化膜２１よりも上層のアノード２２と、アノード２２のエッジを覆うアノードエッジカバー２３と、アノードエッジカバー２３よりも上層のＥＬ（エレクトロルミネッセンス）層２４と、ＥＬ層２４よりも上層のカソード２５とを含み、サブピクセルごとに、島状のアノード２２、ＥＬ層２４、およびカソード２５を含む発光素子（例えば、ＯＬＥＤ：有機発光ダイオード）と、これを駆動するサブ画素回路とが設けられる。アノードエッジカバー２３（バンクとも称する）は、例えば、ポリイミド、アクリル等の塗布可能な有機材料によって構成することができる。 The light emitting element layer 5 (for example, the organic light emitting diode layer) has an anode 22 which is a layer above the flattening film 21, an anode edge cover 23 which covers the edge of the anode 22, and an EL (electroluminescence) which is a layer above the anode edge cover 23. ) A light emitting element (for example, OLED: organic light emitting diode) including a layer 24 and a cathode 25 above the EL layer 24 and including an island-shaped anode 22, an EL layer 24, and a cathode 25 for each subpixel. , A sub-pixel circuit for driving this is provided. The anode edge cover 23 (also referred to as a bank) can be made of a coatable organic material such as polyimide or acrylic.
　ＥＬ層２４は、例えば、下層側から順に、正孔注入層、正孔輸送層、発光層、電子輸送層、電子注入層を積層することで構成される。発光層は、蒸着法あるいはインクジェット法によって、サブピクセルごとに島状に形成されるが、正孔注入層、正孔輸送層、電子輸送層、電子注入層の１以上の層については、ベタ状の共通層とすることもあるし、非形成とすることもある。 The EL layer 24 is composed of, for example, laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side. The light emitting layer is formed in an island shape for each subpixel by a vapor deposition method or an inkjet method, but one or more layers of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are solid. It may be a common layer of, or it may be non-formed.
　アノード（陽極）２２は、例えば、ＩＴＯ（Indium Tin Oxide）とＡｇを含む合金との積層によって構成され、光反射性を有する。カソード２５は、ＭｇＡｇ合金（極薄膜）、ＩＴＯ（Indium Tin Oxide）等の透光性の導電材で構成することができる。 The anode 22 is composed of, for example, a laminate of ITO (Indium Tin Oxide) and an alloy containing Ag, and has light reflectivity. The cathode 25 can be made of a translucent conductive material such as MgAg alloy (ultra-thin film) or ITO (Indium Tin Oxide).
　発光素子層５がＯＬＥＤ層である場合、アノード２２およびカソード２５間の駆動電流によって正孔と電子がＥＬ層２４内で再結合し、これによって生じたエキシトンが基底状態に落ちることによって、光が放出される。アノード２２が光反射性であり、カソード２５が透光性であるため、ＥＬ層２４から放出された表示光ＤＬは上方に向かい、トップエミッションとなる。 When the light emitting element layer 5 is an OLED layer, the driving current between the anode 22 and the cathode 25 causes holes and electrons to recombine in the EL layer 24, and the excitons generated thereby fall to the ground state, so that light is emitted. It is released. Since the anode 22 is light-reflecting and the cathode 25 is translucent, the display light DL emitted from the EL layer 24 faces upward and becomes top emission.
　発光素子層５は、ＯＬＥＤ素子を構成する場合に限られず、無機発光ダイオードあるいは量子ドット発光ダイオードを構成してもよい。 The light emitting element layer 5 is not limited to the case of forming an OLED element, and may be formed of an inorganic light emitting diode or a quantum dot light emitting diode.
　封止層６は透光性であり、カソード２５を覆う無機封止膜２６と、無機封止膜２６よりも上層の有機封止膜２７と、有機封止膜２７を覆う無機封止膜２８とを含む。発光素子層５を覆う封止層６は、水、酸素等の異物の発光素子層５への浸透を防いでいる。 The sealing layer 6 is translucent, and has an inorganic sealing film 26 covering the cathode 25, an organic sealing film 27 above the inorganic sealing film 26, and an inorganic sealing film 28 covering the organic sealing film 27. And include. The sealing layer 6 covering the light emitting element layer 5 prevents foreign substances such as water and oxygen from penetrating into the light emitting element layer 5.
　無機封止膜２６・２８はそれぞれ、例えば、ＣＶＤ法により形成される、酸化シリコン膜、窒化シリコン膜、あるいは酸窒化シリコン膜、またはこれらの積層膜で構成することができる。有機封止膜２７は、無機封止膜２６・２８よりも厚い透光性有機膜であり、アクリル等の塗布可能な有機材料によって構成することができる。 Each of the inorganic sealing films 26 and 28 can be composed of, for example, a silicon oxide film, a silicon nitride film, a silicon nitride film, or a laminated film thereof formed by a CVD method. The organic sealing film 27 is a translucent organic film thicker than the inorganic sealing films 26 and 28, and can be made of a coatable organic material such as acrylic.
　下面フィルム１０は、支持基板を剥離した後に樹脂層１２の下面に貼り付けることで、表示デバイスの裏面保護を実現するためのものであり、その材料としては、ＰＥＴ等が挙げられる。なお、下面フィルム１０が熱伝導性に優れた無機化合物（ＡｌＮまたはダイヤモンド等）の微細粉末を含有することで、下面フィルム１０に、剥離層ＡＬからの放熱性を低下させることなく、表示装置２の外部に放熱させることができる機能を付与することができる。機能フィルム３９は、例えば、光学補償機能、タッチセンサ機能、保護機能等を有する。 The lower surface film 10 is for realizing protection of the back surface of the display device by attaching it to the lower surface of the resin layer 12 after peeling off the support substrate, and examples of the material thereof include PET. Since the lower surface film 10 contains fine powder of an inorganic compound (AlN, diamond, etc.) having excellent thermal conductivity, the lower surface film 10 does not reduce the heat dissipation from the release layer AL, and the display device 2 It is possible to add a function that can dissipate heat to the outside of the. The functional film 39 has, for example, an optical compensation function, a touch sensor function, a protection function, and the like.
　図１のステップＳ１（第１成膜工程）では、基板１３上に剥離層ＡＬを形成する。なお、後述する表示領域４１は、剥離層ＡＬに積層するように形成する。 In step S1 (first film formation step) of FIG. 1, a release layer AL is formed on the substrate 13. The display region 41, which will be described later, is formed so as to be laminated on the release layer AL.
　図１のステップＳ２（第２成膜工程）では、剥離層ＡＬの少なくとも一部を覆うように、樹脂層１２を形成する。剥離層ＡＬの少なくとも一部を樹脂層１２にて覆うことにより、樹脂層１２は、剥離層ＡＬに接触する部位と、剥離層ＡＬに接触する部位の周囲に存在する、基板１３に接触する部位と、を備える。 In step S2 (second film formation step) of FIG. 1, the resin layer 12 is formed so as to cover at least a part of the release layer AL. By covering at least a part of the release layer AL with the resin layer 12, the resin layer 12 is a portion that comes into contact with the substrate 13 and exists around a portion that contacts the release layer AL and a portion that contacts the release layer AL. And.
　図１のステップＳ３（第３成膜工程）では、樹脂層１２の上面および端面を覆うようにバリア層３を形成する。これにより、樹脂層１２に水分が浸透することを防ぐことができ、ステップＳ８までの間に剥離層ＡＬと樹脂層１２とが（意図せず）分離してしまうという問題を解消することができる。 In step S3 (third film forming step) of FIG. 1, the barrier layer 3 is formed so as to cover the upper surface and the end surface of the resin layer 12. As a result, it is possible to prevent water from penetrating into the resin layer 12, and it is possible to solve the problem that the release layer AL and the resin layer 12 are (unintentionally) separated by the step S8. ..
　図１のステップＳ４（第４成膜工程）では、バリア層３の上層に電子回路層を形成する。電子回路層は、薄層トランジスタ層４であってよく、タッチパネル層（不図示）であってよい。なお、電子回路層がタッチパネル層である場合には、その上層に発光素子層５および封止層６を形成する必要はない。 In step S4 (fourth film formation step) of FIG. 1, an electronic circuit layer is formed on the upper layer of the barrier layer 3. The electronic circuit layer may be a thin transistor layer 4 or a touch panel layer (not shown). When the electronic circuit layer is a touch panel layer, it is not necessary to form the light emitting element layer 5 and the sealing layer 6 on the upper layer.
　図１のステップＳ８（剥離工程）では、基板１３の下面から光ＬＶを照射することにより基板１３から樹脂層１２および剥離層ＡＬを分子レベルで剥離する。 In step S8 (peeling step) of FIG. 1, the resin layer 12 and the peeling layer AL are peeled from the substrate 13 at the molecular level by irradiating light LV from the lower surface of the substrate 13.
　剥離層ＡＬとしてグラファイトカーボンを用いた場合における基板１３から剥離層ＡＬの剥離は、グラファイトカーボンの結合力の差により剥離すると考えられる。 When graphite carbon is used as the release layer AL, the release of the release layer AL from the substrate 13 is considered to be due to the difference in the bonding force of the graphite carbon.
　具体的には、グラファイトカーボンにおいて、層間における炭素同士の結合は、ファンデルワールス力により結合し、層内（層の内部）における炭素同士の結合は、共有結合により結合していると考えられている。また、樹脂層１２としてポリイミドを用いた場合では、グラファイトカーボンとポリイミドとの間で、ＳＡＭ結合（グラファイトカーボンにおける層間の結合力より強い結合力を有する結合）により結合する。 Specifically, in graphite carbon, it is considered that the bonds between carbons between layers are bonded by van der Waals force, and the bonds between carbons within the layer (inside the layer) are bonded by covalent bonds. There is. Further, when polyimide is used as the resin layer 12, the graphite carbon and the polyimide are bonded by a SAM bond (a bond having a stronger bonding force than the bonding force between layers in graphite carbon).
　そのため、剥離層ＡＬとしてグラファイトカーボンを用いた場合では、グラファイトカーボンの結合力の差により、基板１３に残留せず剥離する、または、グラファイトカーボンの層間で基板１３から剥離する。それにより、グラファイトカーボンは樹脂層１２に密着したまま残留するため、放熱層とすることができる。 Therefore, when graphite carbon is used as the release layer AL, it is peeled off without remaining on the substrate 13 due to the difference in the bonding force of the graphite carbon, or is peeled off from the substrate 13 between the layers of the graphite carbon. As a result, the graphite carbon remains in close contact with the resin layer 12, so that it can be used as a heat dissipation layer.
　剥離層ＡＬに光ＬＶを照射した場合では、基板１３と剥離層ＡＬとの結合力が低下し、基板１３から剥離層ＡＬおよび樹脂層１２を剥離しやすくなる。一方、樹脂層１２に光ＬＶを照射した場合では、光ＬＶの熱により樹脂層１２が焼かれ、基板１３と樹脂層１２との結合力が低下し、基板１３から樹脂層１２を剥離しやすくなる。 When the release layer AL is irradiated with light LV, the bonding force between the substrate 13 and the release layer AL is reduced, and the release layer AL and the resin layer 12 are easily peeled from the substrate 13. On the other hand, when the resin layer 12 is irradiated with light LV, the resin layer 12 is burned by the heat of the light LV, the bonding force between the substrate 13 and the resin layer 12 is reduced, and the resin layer 12 is easily peeled from the substrate 13. Become.
　なお、樹脂層１２と剥離層ＡＬとが接触する箇所では、樹脂層１２に光ＬＶが直接照射されず、樹脂層１２に熱が加えらない。そのため、樹脂層１２と剥離層ＡＬとが接触する箇所では、光ＬＶによる樹脂層１２の炭化物の発生、および光ＬＶによる樹脂層１２の痕跡の発生を抑制できる。そして光ＬＶを照射することによる痕跡の発生または炭化物の発生を低減することにより、クリーン環境（製造工程）を炭化物により汚染されることを抑制できる。さらに、炭化物の発生を低減することにより、発生した炭化物を洗浄などにより除去することが不要となる、炭化物を発生しなくするために特殊な糊を使用することが不要となる、および、炭化物が発生しなくなるような加工することが不要となる、等により部材およびプロセスコストを抑制できる。 At the place where the resin layer 12 and the release layer AL come into contact with each other, the resin layer 12 is not directly irradiated with light LV, and the resin layer 12 is not heated. Therefore, at the location where the resin layer 12 and the release layer AL come into contact with each other, it is possible to suppress the generation of carbides in the resin layer 12 due to light LV and the generation of traces of the resin layer 12 due to light LV. Then, by reducing the generation of traces or the generation of carbides due to irradiation with light LV, it is possible to suppress the clean environment (manufacturing process) from being contaminated by carbides. Further, by reducing the generation of carbides, it is not necessary to remove the generated carbides by washing or the like, it is not necessary to use a special glue to prevent the generation of carbides, and the carbides are generated. It is possible to suppress the member and process costs by eliminating the need for processing that does not occur.
　一方、樹脂層１２と基板１３とが接触する箇所では、光ＬＶを基板１３の下面から照射することにより樹脂層１２が焼かれ、樹脂層１２の炭化物が樹脂層１２の下面に発生する。樹脂層１２の下面に炭化物が発生することにより、樹脂層１２と基板１３とを剥離する際に、樹脂層１２と基板１３との界面にナイフ等の刃を挿入しやすくなる。それにより、樹脂層１２から基板１３を剥離するきっかけを作りやすくなる。 On the other hand, at the place where the resin layer 12 and the substrate 13 come into contact with each other, the resin layer 12 is burned by irradiating the light LV from the lower surface of the substrate 13, and carbides of the resin layer 12 are generated on the lower surface of the resin layer 12. Since carbides are generated on the lower surface of the resin layer 12, when the resin layer 12 and the substrate 13 are peeled off, it becomes easy to insert a blade such as a knife at the interface between the resin layer 12 and the substrate 13. As a result, it becomes easy to create a trigger for peeling the substrate 13 from the resin layer 12.
　そこで、基板１３と剥離層ＡＬとが接触する箇所の周囲に樹脂層１２と基板１３とが接触する箇所を設けることにより、基板１３から樹脂層１２または剥離層ＡＬを剥離するきっかけを得ることができる。さらに、炭化物の発生を抑制することもできる。そこで、樹脂層１２と基板１３とが接触する箇所は、樹脂層１２と剥離層ＡＬとが接触する箇所の全周に備えてもよく、少なくとも一部に備えていてもよい。 Therefore, by providing a portion where the resin layer 12 and the substrate 13 come into contact with each other around the portion where the substrate 13 and the release layer AL come into contact, it is possible to obtain a trigger for peeling the resin layer 12 or the release layer AL from the substrate 13. it can. Furthermore, the generation of carbides can be suppressed. Therefore, the portion where the resin layer 12 and the substrate 13 come into contact with each other may be provided on the entire circumference of the portion where the resin layer 12 and the release layer AL come into contact with each other, or may be provided at least partially.
　以上のように、本実施形態では、剥離層ＡＬを設けているため、上記従来例と異なり、上述のデラミネーションの工程での不具合の発生を防いで、電子デバイスの製造における歩留まりを向上することができる。さらに、剥離層ＡＬが樹脂層１２に残留し、放熱層として作用することにより、放熱層を形成するために要する工程等を低減できる。さらに、剥離層ＡＬを放熱層として用いる場合では、剥離層ＡＬより熱伝導性の低い粘着層を形成しないため、電子デバイスにおける放熱性を向上させることができる。 As described above, since the release layer AL is provided in the present embodiment, unlike the above-mentioned conventional example, it is possible to prevent the occurrence of a defect in the above-mentioned delamination process and improve the yield in the manufacture of the electronic device. Can be done. Further, the release layer AL remains in the resin layer 12 and acts as a heat radiating layer, so that the steps required to form the heat radiating layer can be reduced. Further, when the release layer AL is used as the heat dissipation layer, the adhesive layer having lower thermal conductivity than the release layer AL is not formed, so that the heat dissipation in the electronic device can be improved.
　光ＬＶは、レーザ光であることが好適である。レーザ光を照射する装置としては、例えば、ＸｅＣｌガスなどを用いたエキシマレーザ照射装置、ＹＡＧ（Yttrium Aluminum Garnet）などを用いた固体レーザ照射装置であってよい。レーザ光としてエキシマレーザを用いることにより、非常に高出力の紫外レーザ光を得ることができる。さらに、エキシマレーザ光は、ビーム形状が長手方向の均一性が高いため、ライン状光源に適している。また、レーザ光として、ＹＡＧなどを用いた固体レーザ（半導体励起固体レーザ）を用いることにより、装置価格およびランニングコストの面で、エキシマレーザよりも比較的安価なライン状光源を実現できる。 The optical LV is preferably laser light. The device for irradiating the laser beam may be, for example, an excimer laser irradiation device using XeCl gas or the like, a solid-state laser irradiation device using YAG (Yttrium Aluminum Garnet) or the like. By using an excimer laser as the laser beam, it is possible to obtain a very high output ultraviolet laser beam. Further, the excimer laser light is suitable for a line-shaped light source because the beam shape has high uniformity in the longitudinal direction. Further, by using a solid-state laser (semiconductor-pumped solid-state laser) using YAG or the like as the laser light, it is possible to realize a line-shaped light source that is relatively cheaper than an excimer laser in terms of equipment cost and running cost.
　また、図１のステップＳ９では、樹脂層１２および剥離層ＡＬに下面フィルム１０を貼付する。樹脂層１２および剥離層ＡＬにおける下面フィルム１０を貼付する面は、樹脂層１２と、剥離層ＡＬと、の積層方向の厚みに差が生じる場合がある。しかし、樹脂層１２と、剥離層ＡＬと、の積層方向の厚みの差は、下面フィルム１０の積層方向の厚さに比べて小さいため、下面フィルム１０を貼付することにより積層方向の厚みの差がなくなる。 Further, in step S9 of FIG. 1, the lower surface film 10 is attached to the resin layer 12 and the release layer AL. The surface of the resin layer 12 and the release layer AL to which the lower surface film 10 is attached may have a difference in thickness between the resin layer 12 and the release layer AL in the stacking direction. However, since the difference in thickness between the resin layer 12 and the release layer AL in the lamination direction is smaller than the thickness in the lamination direction of the lower surface film 10, the difference in thickness in the lamination direction by attaching the lower surface film 10 Is gone.
　図１のステップＳ１０（分断工程）では、バリア層３、樹脂層１２、および基板１３を含む積層体７を、樹脂層１２の端部を通るよう積層体７の厚み方向に切断する。これにより、バリア層３、および樹脂層１２の端面が面一となる。 In step S10 (dividing step) of FIG. 1, the laminated body 7 including the barrier layer 3, the resin layer 12, and the substrate 13 is cut in the thickness direction of the laminated body 7 so as to pass through the end portion of the resin layer 12. As a result, the end faces of the barrier layer 3 and the resin layer 12 are flush with each other.
　（変形例）
　実施形態１の変形例として、図４～６に示すように、基板１３を短冊状に切断してよく、基板１３を所望の大きさに切断してよい（ステップＳ２５）。そして、切断後、基板１３を剥離する（ステップＳ２６）。 (Modification example)
As a modification of the first embodiment, as shown in FIGS. 4 to 6, the substrate 13 may be cut into strips, and the substrate 13 may be cut to a desired size (step S25). Then, after cutting, the substrate 13 is peeled off (step S26).
　なお、基板１３の裏面にキズまたは異物などが存在した場合には、基板１３にレーザを照射できない領域が生じる。そして、基板１３にレーザを照射できない領域においては、樹脂層１２から基板１３を剥離するため、樹脂層１２を無理に引っ張ることにより、樹脂層１２が破れるなどの不良が発生する場合がある。 If there are scratches or foreign matter on the back surface of the substrate 13, there will be a region where the laser cannot be applied to the substrate 13. Then, in the region where the substrate 13 cannot be irradiated with the laser, since the substrate 13 is peeled off from the resin layer 12, defects such as tearing of the resin layer 12 may occur by forcibly pulling the resin layer 12.
　そこで、基板１３を短冊状に分断することにより、樹脂層１２が空気に触れ、水分を含むことができる。それにより、樹脂層１２と基板１３との密着性が低くなる。その結果、基板１３にレーザを照射できない領域において、樹脂層１２に無理な引っ張り応力が生じた場合であっても、樹脂層１２が破れるなどの不良の発生を防ぐことができる。さらに、樹脂層１２に剥離層ＡＬ（放熱層）が貼合しているため、放熱層を形成する必要がなくなる。また、放熱層は、粘着層を介さず形成されるため、電子デバイスにおける放熱性を向上させることができる。 Therefore, by dividing the substrate 13 into strips, the resin layer 12 can come into contact with air and contain moisture. As a result, the adhesion between the resin layer 12 and the substrate 13 is lowered. As a result, even when an unreasonable tensile stress is generated in the resin layer 12 in the region where the substrate 13 cannot be irradiated with the laser, it is possible to prevent the resin layer 12 from being broken or other defects. Further, since the release layer AL (heat dissipation layer) is bonded to the resin layer 12, it is not necessary to form the heat dissipation layer. Further, since the heat radiating layer is formed without interposing the adhesive layer, the heat radiating property in the electronic device can be improved.
　〔実施形態２〕
　実施形態２として、図７に示すように、表示領域４１、額縁領域４２、および端子領域４３を備えたフレキシブルパネル４０において、分断マーカ等のアライメントマーカ４４の位置に剥離層ＡＬを設置してもよい。図７では、表示領域４１に剥離層ＡＬを形成しない場合を図示した。しかし、フレキシブルパネル４０に良好な視認性が求められる場合等には、表示領域４１に剥離層ＡＬを形成してもよい。アライメントマーカ４４の位置に剥離層ＡＬを設置することにより、アライメントマーカ４４に樹脂層１２の炭化物およびレーザ跡の発生等による位置合わせ不良を抑制できる。さらに、樹脂層１２に剥離層ＡＬ（放熱層）が貼合しているため、放熱層を形成する必要がなくなる。また、放熱層は、粘着層を介さず形成されるため、電子デバイスの放熱性を向上させることができる。 [Embodiment 2]
As the second embodiment, as shown in FIG. 7, in the flexible panel 40 provided with the display area 41, the frame area 42, and the terminal area 43, even if the release layer AL is installed at the position of the alignment marker 44 such as the division marker. Good. FIG. 7 shows a case where the release layer AL is not formed in the display region 41. However, when the flexible panel 40 is required to have good visibility, the release layer AL may be formed in the display area 41. By installing the release layer AL at the position of the alignment marker 44, it is possible to suppress misalignment due to the generation of carbides and laser traces of the resin layer 12 on the alignment marker 44. Further, since the release layer AL (heat dissipation layer) is bonded to the resin layer 12, it is not necessary to form the heat dissipation layer. Further, since the heat radiating layer is formed without interposing the adhesive layer, the heat radiating property of the electronic device can be improved.
　また、端子領域４３には、電子回路層に設けられた配線に接続され、外部からの信号を入力する端子部（不図示）が形成されている。さらに端子部は、端子部に設けられた複数の端子に、上記配線と上記電信号を伝送する配線とが接続されている。 Further, in the terminal region 43, a terminal portion (not shown) is formed which is connected to the wiring provided in the electronic circuit layer and inputs a signal from the outside. Further, in the terminal portion, the wiring and the wiring for transmitting the electric signal are connected to a plurality of terminals provided in the terminal portion.
　（変形例）
　実施形態２の変形例として、図８および９に示す様に、端子領域４３に剥離層ＡＬを設置してもよい。図８では、端子領域４３に剥離層ＡＬを備えることにより、アライメントマーカ４４に樹脂層１２の炭化物およびレーザ跡の発生等によるアライメントマーカ４４の読み取り性の低下を抑制できる。それにより、実装端子との位置合わせが容易にできるため、実装不良を抑制し、あるいは、実装工程を簡素化できる。その結果、実装端子の実装におけるコストを削減することができる。さらに、樹脂層１２に剥離層ＡＬ（放熱層）が貼合しているため、放熱層を形成する必要がなくなる。また、放熱層は、粘着層を介さず形成されるため、電子デバイスの放熱性を向上させることができる。 (Modification example)
As a modification of the second embodiment, as shown in FIGS. 8 and 9, the release layer AL may be provided in the terminal region 43. In FIG. 8, by providing the release layer AL in the terminal region 43, it is possible to suppress a decrease in readability of the alignment marker 44 due to the generation of carbides and laser traces of the resin layer 12 on the alignment marker 44. As a result, the alignment with the mounting terminal can be easily performed, so that mounting defects can be suppressed or the mounting process can be simplified. As a result, the cost of mounting the mounting terminal can be reduced. Further, since the release layer AL (heat dissipation layer) is bonded to the resin layer 12, it is not necessary to form the heat dissipation layer. Further, since the heat radiating layer is formed without interposing the adhesive layer, the heat radiating property of the electronic device can be improved.
　また、図９に示すように、タッチパネルＴＰは、タッチパネル部ＴＰ１と端子領域４３とを備える。タッチパネル部ＴＰ１は、有機ＥＬ表示装置２の表示面上に載置される部分であって、実際にタッチパネル機能を有する部分（換言すれば、ユーザの操作を受け付ける部分）である。また、タッチパネルＴＰにおいて、各電極と接続する配線が形成された端子領域４３は、表示領域外にあるため、端子領域４３においては、剥離層ＡＬを設けなくてもよい。 Further, as shown in FIG. 9, the touch panel TP includes a touch panel unit TP1 and a terminal area 43. The touch panel unit TP1 is a portion placed on the display surface of the organic EL display device 2 and actually has a touch panel function (in other words, a portion that accepts a user's operation). Further, in the touch panel TP, since the terminal region 43 in which the wiring connecting to each electrode is formed is outside the display region, it is not necessary to provide the release layer AL in the terminal region 43.
　〔実施形態３〕
　図１０は実施形態３の表示デバイスの製造方法を示す平面図であり、図１１は実施形態３の表示デバイスの製造方法を示す断面図である。なお、図１１では、図４の製造フローに示すように、分断した後（ステップＳ２５）、基板および剥離層を剥離した（ステップ２６）。しかし、図１に示すように、基板および剥離層を剥離した後（ステップＳ８）、分断してもよい（ステップＳ１０）。 [Embodiment 3]
FIG. 10 is a plan view showing a method of manufacturing the display device of the third embodiment, and FIG. 11 is a cross-sectional view showing the method of manufacturing the display device of the third embodiment. In FIG. 11, as shown in the manufacturing flow of FIG. 4, after the division (step S25), the substrate and the release layer were peeled off (step 26). However, as shown in FIG. 1, after the substrate and the release layer are peeled off (step S8), they may be separated (step S10).
　実施形態３では、図１０の（ａ）および図１１の（ａ）に示すように、大判の基板１３上に剥離層ＡＬを形成し、剥離層ＡＬ上に、島状の第１部１２ａ（第１の表示領域４１ａに対応）および島状の第２部１２ｂ（第２の表示領域４１ｂに対応）を含む樹脂層１２を形成する。次いで、第１部１２ａおよび第２部１２ｂを覆うように共通のバリア層３を形成し、次いで、第１部１２ａと重なる領域４ａおよび第２部１２ｂと重なる領域４ｂを含む薄層トランジスタ層を形成する。次いで、第１部１２ａと重なる領域５ａおよび第２部１２ｂと重なる領域５ｂを含む発光素子層を形成し、発光素子層を覆う封止層６を形成する。 In the third embodiment, as shown in (a) of FIG. 10 and (a) of FIG. 11, the release layer AL is formed on the large-sized substrate 13, and the island-shaped first portion 12a (is formed on the release layer AL. A resin layer 12 including a first display region 41a) and an island-shaped second portion 12b (corresponding to a second display region 41b) is formed. Next, a common barrier layer 3 is formed so as to cover the first part 12a and the second part 12b, and then a thin transistor layer including a region 4a overlapping the first part 12a and a region 4b overlapping the second part 12b is formed. Form. Next, a light emitting element layer including a region 5a overlapping the first part 12a and a region 5b overlapping the second part 12b is formed, and a sealing layer 6 covering the light emitting element layer is formed.
　次いで、図１０の（ｂ）および図１１の（ｂ）、（ｃ）に示すように、平面視における第１部１２ａよりも外側にあってバリア層３および剥離部ＡＬが接触する部分を通るように、封止層６、バリア層３、剥離層ＡＬおよび基板１３を切断し、平面視における第２部１２ｂよりも外側にあってバリア層３および剥離層ＡＬが接触する部分を通るように、封止層６、バリア層３、剥離層ＡＬおよび基板１３を切断するプレカット工程を行う。その後、分割基板１３ａ上の、第１部１２ａおよびバリア層３を含む第１積層体７Ａと、分割基板１３ｂ上の、第２部１２ｂおよびバリア層３を含む第２積層体７Ｂそれぞれに上面フィルム１４を張り付ける。 Next, as shown in (b) of FIG. 10 and (b) and (c) of FIG. 11, it passes through a portion outside the first portion 12a in a plan view and in contact with the barrier layer 3 and the peeling portion AL. As described above, the sealing layer 6, the barrier layer 3, the release layer AL and the substrate 13 are cut so as to pass through the portion outside the second portion 12b in the plan view where the barrier layer 3 and the release layer AL are in contact with each other. , A precut step of cutting the sealing layer 6, the barrier layer 3, the release layer AL and the substrate 13 is performed. After that, a top film is formed on the first laminated body 7A including the first portion 12a and the barrier layer 3 on the divided substrate 13a and the second laminated body 7B including the second portion 12b and the barrier layer 3 on the divided substrate 13b. Paste 14 on it.
　次いで、図１０の（ｃ）および図１１の（ｄ）のように、第１積層体７Ａを、第１部１２ａの端部を通るよう厚み方向に切断し、第２積層体７Ｂを、第２部１２ｂの端部を通るよう厚み方向に切断する切り出し工程を行う。次いで、図１１の（ｅ）、（ｆ）のように、第１積層体７Ａおよび第２積層体７Ｂそれぞれの下側に位置する剥離層ＡＬに光ＬＶを照射し、第１部１２ａおよび剥離層ＡＬを分割基板１３ａから剥離し、第２部１２ｂおよび剥離層ＡＬを分割基板１３ｂから剥離する。 Next, as shown in (c) of FIG. 10 and (d) of FIG. 11, the first laminated body 7A is cut in the thickness direction so as to pass through the end portion of the first portion 12a, and the second laminated body 7B is cut into the second laminated body 7B. A cutting step of cutting in the thickness direction is performed so as to pass through the ends of the two parts 12b. Next, as shown in FIGS. 11 (e) and 11 (f), the release layer AL located below each of the first laminated body 7A and the second laminated body 7B is irradiated with light LV, and the first part 12a and the second laminated body 7B are separated. The layer AL is peeled from the split substrate 13a, and the second part 12b and the peeled layer AL are peeled from the split substrate 13b.
　実施形態３では、分割基板１３ａ（ガラス基板）に付着した状態の第１積層体７Ａと、分割基板１３ｂ（ガラス基板）に付着した状態の第２積層体７Ｂとを別々に運搬、保管することができる。第１積層体７Ａおよび第２積層体７Ｂは、ガラス基板から剥がされた状態（可撓状態）の積層体と比較して運搬、保管が格段に容易である。 In the third embodiment, the first laminated body 7A attached to the divided substrate 13a (glass substrate) and the second laminated body 7B attached to the divided substrate 13b (glass substrate) are separately transported and stored. Can be done. The first laminated body 7A and the second laminated body 7B are much easier to transport and store than the laminated body in a state of being peeled off from the glass substrate (flexible state).
　図１１の（ｃ）に示すように、バリア層３が、樹脂層の第１部１２ａおよび第２部１２ｂそれぞれの上面および端面を覆っているため、樹脂層１２ａ・１２ｂに水分等の異物が浸透することを防ぐことができ、ステップＳ８（剥離工程）までの間に基板１３ａおよび基板１３ｂと、樹脂層の第１部１２ａあるいは第２部１２ｂとが（意図せず）分離してしまうという問題を解消することができる。例えば、第１積層体７Ａの運搬作業中に、樹脂層の第１部１２ａが基板１３ａから剥がれ、第１積層体７Ａが落下して破損するといったアクシデントを防ぐことができる。 As shown in FIG. 11 (c), since the barrier layer 3 covers the upper surfaces and end faces of the first portion 12a and the second portion 12b of the resin layer, foreign matter such as moisture is contained in the resin layers 12a and 12b. It is possible to prevent permeation, and it is said that the substrate 13a and the substrate 13b and the first part 12a or the second part 12b of the resin layer are (unintentionally) separated by the step S8 (peeling step). The problem can be solved. For example, it is possible to prevent an accident in which the first portion 12a of the resin layer is peeled off from the substrate 13a during the transportation work of the first laminated body 7A, and the first laminated body 7A falls and is damaged.
　実施形態３では、樹脂層１２を第１部１２ａおよび第２部１２ｂの２つに分離形成しているが、これに限定されず、３つ以上に分割してもよい。また、ステップＳ４～Ｓ６において、第１部１２ａ上に複数パネルに対応するデバイスを形成するとともに、第２部１２ｂ上に複数パネルに対応するデバイスを形成しておき、ステップＳ１０において、第１積層体７Ａおよび第２積層体７Ｂそれぞれから複数の電子デバイス（可撓性パネル）を得る構成でもよい。また、第１の表示領域４１ａおよび第２の表示領域４１ｂは、さらに複数の表示領域に分割して形成されていてもよい。 In the third embodiment, the resin layer 12 is separated and formed into two parts, the first part 12a and the second part 12b, but the present invention is not limited to this, and the resin layer 12 may be divided into three or more parts. Further, in steps S4 to S6, a device corresponding to a plurality of panels is formed on the first part 12a, and a device corresponding to the plurality of panels is formed on the second part 12b, and in step S10, the first stacking is performed. A plurality of electronic devices (flexible panels) may be obtained from each of the body 7A and the second laminated body 7B. Further, the first display area 41a and the second display area 41b may be further divided into a plurality of display areas.
　前記各実施形態は、図１２に示す、可撓性の液晶表示デバイスにも適用可能である。この場合、例えば、樹脂層１２の背面に可撓性のバックライトユニット５０を配し、樹脂層１２を透明ポリイミドで構成し、薄層トランジスタ層４に画素電極ＰＥを形成し、画素電極ＰＥと可撓性の対向基板３７（カラーフィルタ基板）との間に、シャッターとして機能する液晶層３５を配する。前記各実施形態によれば、剥離工程において樹脂層１２の下面が劣化しにくいため、表示光ＤＬ（バックライト光）が樹脂層１２の下面を通過する液晶表示デバイスにも好適といえる。 Each of the above embodiments is also applicable to the flexible liquid crystal display device shown in FIG. In this case, for example, a flexible backlight unit 50 is arranged on the back surface of the resin layer 12, the resin layer 12 is made of transparent polyimide, a pixel electrode PE is formed on the thin transistor layer 4, and the pixel electrode PE is formed. A liquid crystal layer 35 that functions as a shutter is arranged between the flexible facing substrate 37 (color filter substrate). According to each of the above embodiments, since the lower surface of the resin layer 12 is less likely to deteriorate in the peeling step, it can be said that it is also suitable for a liquid crystal display device in which the display light DL (backlight light) passes through the lower surface of the resin layer 12.
　〔まとめ〕
　本実施形態にかかる電子デバイスが備える電気光学素子（電流によって輝度や透過率が制御される電気光学素子）は特に限定されるものではない。本実施形態にかかる表示装置としては、例えば、電気光学素子としてＯＬＥＤ（Organic Light Emitting Diode：有機発光ダイオード）を備えた有機ＥＬディスプレイ、電気光学素子として無機発光ダイオードを備えた無機ＥＬディスプレイ、電気光学素子としてＱＬＥＤ（Quantum dot Light Emitting Diode：量子ドット発光ダイオード）を備えたＱＬＥＤディスプレイ等が挙げられる。 [Summary]
The electro-optical element (electro-optical element whose brightness and transmittance are controlled by an electric current) included in the electronic device according to the present embodiment is not particularly limited. Examples of the display device according to the present embodiment include an organic EL display provided with an OLED (Organic Light Emitting Diode) as an electro-optical element, an inorganic EL display provided with an inorganic light emitting diode as an electro-optical element, and electro-optical. Examples of the element include a QLED display provided with a QLED (Quantum dot Light Emitting Diode).
　本発明は上述した実施形態に限定されるものではなく、異なる実施形態にそれぞれ開示された技術的手段を適宜組み合わせて得られる実施形態についても本発明の技術的範囲に含まれる。さらに、各実施形態にそれぞれ開示された技術的手段を組み合わせることにより、新しい技術的特徴を形成することができる。 The present invention is not limited to the above-described embodiments, and embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment.
　〔態様１〕
　母基板上に島状の剥離層を形成する第１成膜工程と、前記剥離層の少なくとも一部を覆うように、樹脂層を積層させる第２成膜工程と、前記樹脂層を覆うように、バリア層を形成する第３成膜工程と、前記バリア層の上層に電子回路層を形成する第４成膜工程と、前記剥離層に対してレーザ光を照射し、前記母基板から、前記剥離層および前記樹脂層を剥離する剥離工程と、を含む電子デバイスの製造方法。 [Aspect 1]
A first film forming step of forming an island-shaped peeling layer on a mother substrate, a second film forming step of laminating resin layers so as to cover at least a part of the peeling layer, and covering the resin layer. The third film forming step of forming the barrier layer, the fourth film forming step of forming the electronic circuit layer on the upper layer of the barrier layer, and the release layer being irradiated with laser light, from the mother substrate, the above. A method for manufacturing an electronic device, comprising a peeling step of peeling the peeling layer and the resin layer.
　〔様態２〕
　前記第２成膜工程では、前記剥離層の全面を覆うように、樹脂層を積層させる様態１に記載の電子デバイスの製造方法。 [Mode 2]
The method for manufacturing an electronic device according to mode 1, wherein in the second film forming step, a resin layer is laminated so as to cover the entire surface of the peeling layer.
　〔様態３〕
　前記第４成膜工程と前記剥離工程との間に、前記樹脂層および前記バリア層を含む積層体を、前記樹脂層の端部を通るよう前記積層体の厚み方向に分断する分断工程を含む様態１または２に記載の電子デバイスの製造方法。 [Mode 3]
Between the fourth film forming step and the peeling step, a dividing step of dividing the laminate including the resin layer and the barrier layer in the thickness direction of the laminate so as to pass through the end portion of the resin layer is included. The method for manufacturing an electronic device according to mode 1 or 2.
　〔様態４〕
　前記分断工程では、前記積層体に加えて前記剥離層および前記母基板も分断する様態３に記載の電子デバイスの製造方法。 [Mode 4]
The method for manufacturing an electronic device according to mode 3, wherein in the dividing step, the release layer and the mother substrate are divided in addition to the laminated body.
　〔様態５〕
　前記第１成膜工程では、前記分断工程でのアライメントマーカの設置位置に重畳するように前記剥離層を形成する様態３または４に記載の電子デバイスの製造方法。 [Mode 5]
The method for manufacturing an electronic device according to mode 3 or 4, wherein in the first film forming step, the release layer is formed so as to be superimposed on the installation position of the alignment marker in the dividing step.
　〔様態６〕
　前記第１成膜工程では、前記電子回路層に設けられた配線に接続され、外部から信号を入力する端子領域に重畳するように前記剥離層を形成する様態３～５のいずれか１項に記載の電子デバイスの製造方法。 [Mode 6]
In the first film forming step, any one of the modes 3 to 5 which is connected to the wiring provided in the electronic circuit layer and forms the peeling layer so as to be superimposed on the terminal region where a signal is input from the outside. The method of manufacturing the electronic device described.
　〔様態７〕
　前記第２成膜工程では、島状の第１部および島状の第２部を含む樹脂層を形成し、前記第３成膜工程では、前記第１部および前記第２部を覆う共通のバリア層を形成し、前記第４成膜工程では、前記第１部と重なる領域および前記第２部と重なる領域を含む前記電子回路層を形成し、前記第４成膜工程と前記剥離工程との間に、平面視において前記第１部および前記第２部よりも外側にあって前記バリア層および前記剥離層が接触する部分を通るように、前記バリア層、前記剥離層、および前記母基板を切断するプレカット工程を含む様態１に記載の電子デバイスの製造方法。 [Mode 7]
In the second film forming step, a resin layer including the island-shaped first part and the island-shaped second part is formed, and in the third film forming step, the first part and the second part are covered in common. A barrier layer is formed, and in the fourth film forming step, the electronic circuit layer including a region overlapping the first part and a region overlapping the second part is formed, and the fourth forming step and the peeling step are performed. The barrier layer, the peeling layer, and the mother substrate so as to pass through a portion outside the first part and the second part in a plan view and in contact with the barrier layer and the peeling layer. The method for manufacturing an electronic device according to mode 1, which includes a pre-cutting step of cutting.
　〔様態８〕
　前記プレカット工程と前記剥離工程との間に、前記第１部および前記バリア層を含む第１積層体を、前記第１部の端部を通るように前記第１積層体の厚み方向に切断し、前記第２部および前記バリア層を含む第２積層体を、前記第２部の端部が通るように前記第２積層体の厚み方向に切断する切だし工程を含む様態７に記載の電子デバイスの製造方法。 [Mode 8]
Between the precut step and the peeling step, the first laminated body including the first part and the barrier layer is cut in the thickness direction of the first laminated body so as to pass through the end portion of the first part. The electron according to mode 7, further comprising a cutting step of cutting the second laminated body including the second part and the barrier layer in the thickness direction of the second laminated body so that the end portion of the second part passes through. How to make the device.
　〔様態９〕
　前記剥離工程の後に、前記樹脂層および前記剥離層が剥離された前記母基板に対して、前記第１成膜工程～前記剥離工程を順次行う、様態１～８のいずれか１項に記載の電子デバイスの製造方法。 [Mode 9]
The item according to any one of Modes 1 to 8, wherein after the peeling step, the resin layer and the mother substrate from which the peeling layer is peeled are sequentially subjected to the first film forming step to the peeling step. How to make an electronic device.
　〔様態１０〕
　前記剥離層は、グラファイトカーボンを含む、様態１～９のいずれか１項に記載の電子デバイスの製造方法。 [Mode 10]
The method for manufacturing an electronic device according to any one of modes 1 to 9, wherein the release layer contains graphite carbon.
　〔様態１１〕
　前記剥離層に対して照射するレーザ光は、エキシマレーザである、様態１～１０のいずれか１項に記載の電子デバイスの製造方法。 [Mode 11]
The method for manufacturing an electronic device according to any one of modes 1 to 10, wherein the laser beam irradiating the release layer is an excimer laser.
　〔様態１２〕
　前記剥離層に対して照射するレーザ光は、固体レーザである、様態１～１０のいずれか１項に記載の電子デバイスの製造方法。 [Mode 12]
The method for manufacturing an electronic device according to any one of modes 1 to 10, wherein the laser beam irradiating the release layer is a solid-state laser.
　〔様態１３〕
　前記電子回路層は、薄層トランジスタ層である様態１～１２のいずれか１項に記載の電子デバイスの製造方法。 [Mode 13]
The method for manufacturing an electronic device according to any one of aspects 1 to 12, wherein the electronic circuit layer is a thin transistor layer.
　〔様態１４〕
　前記電子回路層は、前記薄層トランジスタ層よりも上層に発光素子層が形成される様態１３に記載の電子デバイスの製造方法。 [Mode 14]
The method for manufacturing an electronic device according to mode 13, wherein the electronic circuit layer has a light emitting element layer formed above the thin transistor layer.
　〔様態１５〕
　前記電子回路層は、前記薄層トランジスタ層よりも上層に液晶層が形成される様態１２に記載の電子デバイスの製造方法。 [Mode 15]
The method for manufacturing an electronic device according to mode 12, wherein a liquid crystal layer is formed on the electronic circuit layer above the thin transistor layer.
　〔様態１６〕
　前記電子回路層は、タッチパネル層である様態１～１２のいずれか１項に記載の電子デバイスの製造方法。 [Mode 16]
The method for manufacturing an electronic device according to any one of aspects 1 to 12, wherein the electronic circuit layer is a touch panel layer.
　〔様態１７〕
　前記剥離層はＰＶＤ法、またはスパッタリング法により形成される、様態１～１６のいずれか１項に記載の電子デバイスの製造方法。 [Mode 17]
The method for manufacturing an electronic device according to any one of modes 1 to 16, wherein the release layer is formed by a PVD method or a sputtering method.
　〔様態１８〕
　樹脂層と、バリア層と、電子回路層と、を順次積層した電子デバイスであって、前記樹脂層は、前記樹脂層における前記バリア層と対向する面の反対側の面において、グラファイトカーボンと接触する、電子デバイス。 [Mode 18]
An electronic device in which a resin layer, a barrier layer, and an electronic circuit layer are sequentially laminated, and the resin layer comes into contact with graphite carbon on a surface of the resin layer opposite to the surface facing the barrier layer. Electronic devices.
２　有機ＥＬ表示装置
３　バリア層
４　薄膜トランジスタ層（電子回路層）
５　発光素子層
６　封止層
７　積層体
７Ａ　第１積層体
７Ｂ　第２積層体
１０　下面フィルム
１２、１２ａ・１２ｂ　樹脂層
１３　基板
１３ａ、１３ｂ　分割基板
１４　上面フィルム
１５　半導体膜
１６、１６・１８・２０、１８、２０　無機絶縁膜
２１　平坦化膜
２２　アノード
２３　アノードエッジカバー
２５　カソード
２６、２６・２８、２８　無機封止膜
２７　有機封止膜
３５　液晶層
３７　対向基板
３９　機能フィルム
４１　表示領域
４２　額縁領域
４３　端子領域
４４　アライメントマーカ
５０　バックライトユニット
ＡＬ　剥離層
ＬＶ　光
ＴＰ　タッチパネル（電子回路層）
ＴＰ１　タッチパネル部 2 Organic EL display device 3 Barrier layer 4 Thin film transistor layer (electronic circuit layer)
5 Light emitting element layer 6 Sealing layer 7 Laminated body 7A First laminated body 7B Second laminated body 10 Bottom film 12, 12a / 12b Resin layer 13 Substrate 13a, 13b Divided substrate 14 Top film 15 Semiconductor film 16, 16.18. 20, 18, 20 Inorganic insulating film 21 Flattening film 22 Anode 23 Anode edge cover 25 Cathode 26, 26.28, 28 Inorganic sealing film 27 Organic sealing film 35 Liquid crystal layer 37 Opposing substrate 39 Functional film 41 Display area 42 Frame Area 43 Terminal area 44 Alignment marker 50 Backlight unit AL Peeling layer LV Optical TP Touch film (electronic circuit layer)
TP1 touch panel

Claims (18)

  1. 　母基板上に島状の剥離層を形成する第１成膜工程と、
    　前記剥離層の少なくとも一部を覆うように、樹脂層を積層させる第２成膜工程と、
    　前記樹脂層を覆うように、バリア層を形成する第３成膜工程と、
    　前記バリア層の上層に電子回路層を形成する第４成膜工程と、
    　前記剥離層に対してレーザ光を照射し、前記母基板から、前記剥離層および前記樹脂層を剥離する剥離工程と、
    　を含む電子デバイスの製造方法。     The first film formation step of forming an island-shaped release layer on the mother substrate, and
    A second film forming step of laminating a resin layer so as to cover at least a part of the peeling layer,
    A third film forming step of forming a barrier layer so as to cover the resin layer, and
    A fourth film forming step of forming an electronic circuit layer on the upper layer of the barrier layer, and
    A peeling step of irradiating the peeling layer with a laser beam to peel the peeling layer and the resin layer from the mother substrate.
    A method of manufacturing an electronic device including.
  2. 　前記第２成膜工程では、前記剥離層の全面を覆うように、樹脂層を積層させる請求項１に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 1, wherein in the second film forming step, a resin layer is laminated so as to cover the entire surface of the release layer.
  3. 　前記第４成膜工程と前記剥離工程との間に、前記樹脂層および前記バリア層を含む積層体を、前記樹脂層の端部を通るよう前記積層体の厚み方向に分断する分断工程を含む請求項１または２に記載の電子デバイスの製造方法。 Between the fourth film forming step and the peeling step, a dividing step of dividing the laminate including the resin layer and the barrier layer in the thickness direction of the laminate so as to pass through the end portion of the resin layer is included. The method for manufacturing an electronic device according to claim 1 or 2.
  4. 　前記分断工程では、前記積層体に加えて前記剥離層および前記母基板も分断する請求項３に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 3, wherein in the dividing step, the release layer and the mother substrate are divided in addition to the laminate.
  5. 　前記第１成膜工程では、前記分断工程でのアライメントマーカの設置位置に重畳するように前記剥離層を形成する請求項３または４に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 3 or 4, wherein in the first film forming step, the peeling layer is formed so as to be superimposed on the installation position of the alignment marker in the dividing step.
  6. 　前記第１成膜工程では、
    　前記電子回路層に設けられた配線に接続され、外部から信号を入力する端子領域に重畳するように前記剥離層を形成する請求項３～５のいずれか１項に記載の電子デバイスの製造方法。     In the first film forming step,
    The method for manufacturing an electronic device according to any one of claims 3 to 5, which is connected to a wiring provided in the electronic circuit layer and forms the peeling layer so as to be superimposed on a terminal region for inputting a signal from the outside. ..
  7. 　前記第２成膜工程では、島状の第１部および島状の第２部を含む樹脂層を形成し、
    　前記第３成膜工程では、前記第１部および前記第２部を覆う共通のバリア層を形成し、
    　前記第４成膜工程では、前記第１部と重なる領域および前記第２部と重なる領域を含む前記電子回路層を形成し、
    　前記第４成膜工程と前記剥離工程との間に、平面視において前記第１部および前記第２部よりも外側にあって前記バリア層および前記剥離層が接触する部分を通るように、前記バリア層、前記剥離層、および前記母基板を切断するプレカット工程を含む請求項１に記載の電子デバイスの製造方法。     In the second film forming step, a resin layer containing an island-shaped first portion and an island-shaped second portion is formed.
    In the third film forming step, a common barrier layer covering the first part and the second part is formed.
    In the fourth film forming step, the electronic circuit layer including the region overlapping the first portion and the region overlapping the second portion is formed.
    Between the fourth film forming step and the peeling step, the barrier layer and the peeling layer come into contact with each other on the outside of the first part and the second part in a plan view. The method for manufacturing an electronic device according to claim 1, further comprising a precut step of cutting the barrier layer, the peeling layer, and the mother substrate.
  8. 　前記プレカット工程と前記剥離工程との間に、前記第１部および前記バリア層を含む第１積層体を、前記第１部の端部を通るように前記第１積層体の厚み方向に切断し、前記第２部および前記バリア層を含む第２積層体を、前記第２部の端部が通るように前記第２積層体の厚み方向に切断する切だし工程を含む請求項７に記載の電子デバイスの製造方法。 Between the pre-cutting step and the peeling step, the first laminated body including the first part and the barrier layer is cut in the thickness direction of the first laminated body so as to pass through the end portion of the first part. The seventh aspect of the present invention includes a cutting step of cutting the second laminated body including the second part and the barrier layer in the thickness direction of the second laminated body so that the end portion of the second part passes through. Manufacturing method of electronic devices.
  9. 　前記剥離工程の後に、前記樹脂層および前記剥離層が剥離された前記母基板に対して、前記第１成膜工程～前記剥離工程を順次行う、請求項１～８のいずれか１項に記載の電子デバイスの製造方法。 The method according to any one of claims 1 to 8, wherein after the peeling step, the resin layer and the mother substrate from which the peeling layer has been peeled are sequentially subjected to the first film forming step to the peeling step. How to make electronic devices.
  10. 　前記剥離層は、グラファイトカーボンを含む、請求項１～９のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 9, wherein the release layer contains graphite carbon.
  11. 　前記剥離層に対して照射するレーザ光は、エキシマレーザである、請求項１～１０のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 10, wherein the laser beam irradiating the release layer is an excimer laser.
  12. 　前記剥離層に対して照射するレーザ光は、固体レーザである、請求項１～１０のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 10, wherein the laser beam irradiating the release layer is a solid-state laser.
  13. 　前記電子回路層は、薄層トランジスタ層である請求項１～１２のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 12, wherein the electronic circuit layer is a thin transistor layer.
  14. 　前記電子回路層は、前記薄層トランジスタ層よりも上層に発光素子層が形成される請求項１３に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 13, wherein the electronic circuit layer has a light emitting element layer formed above the thin transistor layer.
  15. 　前記電子回路層は、前記薄層トランジスタ層よりも上層に液晶層が形成される請求項１３に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to claim 13, wherein a liquid crystal layer is formed on the electronic circuit layer above the thin transistor layer.
  16. 　前記電子回路層は、タッチパネル層である請求項１～１２のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 12, wherein the electronic circuit layer is a touch panel layer.
  17. 　前記剥離層はＰＶＤ法、またはスパッタリング法により形成される、請求項１～１６のいずれか１項に記載の電子デバイスの製造方法。 The method for manufacturing an electronic device according to any one of claims 1 to 16, wherein the release layer is formed by a PVD method or a sputtering method.
  18. 　樹脂層と、バリア層と、電子回路層と、を順次積層した電子デバイスであって、
    　前記樹脂層は、前記樹脂層における前記バリア層と対向する面の反対側の面において、グラファイトカーボンと接触する、電子デバイス。     An electronic device in which a resin layer, a barrier layer, and an electronic circuit layer are sequentially laminated.
    An electronic device in which the resin layer comes into contact with graphite carbon on a surface of the resin layer opposite to the surface facing the barrier layer.
PCT/JP2019/013854 2019-03-28 2019-03-28 Method for producing electronic device, and electronic device WO2020194737A1 (en)

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JPH065891A (en) * 1992-06-19 1994-01-14 Mitsubishi Electric Corp Manufacture of thin-film solar cell
JP2006344618A (en) * 2005-06-07 2006-12-21 Fujifilm Holdings Corp Structure containing functional film, and manufacturing method of functional film
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