WO2020188648A1 - Modeling method, modeling system, and modeling base - Google Patents

Modeling method, modeling system, and modeling base Download PDF

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Publication number
WO2020188648A1
WO2020188648A1 PCT/JP2019/010924 JP2019010924W WO2020188648A1 WO 2020188648 A1 WO2020188648 A1 WO 2020188648A1 JP 2019010924 W JP2019010924 W JP 2019010924W WO 2020188648 A1 WO2020188648 A1 WO 2020188648A1
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WIPO (PCT)
Prior art keywords
film
modeling
work
base material
modeled object
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PCT/JP2019/010924
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French (fr)
Japanese (ja)
Inventor
俊光 倉見
剛之 水谷
宮川　智樹
明宏 辻
ふみ香 清水
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株式会社ニコン
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Priority to PCT/JP2019/010924 priority Critical patent/WO2020188648A1/en
Publication of WO2020188648A1 publication Critical patent/WO2020188648A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
    • B29C64/20—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B29C64/245—Platforms or substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00—Processes of additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y40/00—Auxiliary operations or equipment, e.g. for material handling

Definitions

  • the present invention relates to, for example, a modeling method and a modeling system for forming a modeled object, and a technical field of a modeling base used in the modeling system.
  • Patent Document 1 describes a modeling system in which a powdered material is melted with an energy beam and then the melted material is solidified to form a modeled object on a base material.
  • a powdered material is melted with an energy beam and then the melted material is solidified to form a modeled object on a base material.
  • the film comprising irradiating the film formed on the surface of the base material with an energy beam and supplying a material having a melting point lower than the melting point of the film to the irradiation position of the energy beam.
  • an irradiation device that irradiates a film formed on the surface of the base material with an energy beam, and a supply device that supplies a material having a melting point lower than the melting point of the film to the irradiation position of the energy beam.
  • a control device that controls the irradiation device and the supply device to irradiate the film with the energy beam and supply the material to the irradiation position of the energy beam to form a modeled object on the base material.
  • a built-in modeling system is provided.
  • a modeling base used in a modeling system for forming a modeled object using a material, which is formed on a base material and the surface of the base material and has a melting point higher than the melting point of the material.
  • FIG. 1 is a cross-sectional view showing the structure of the modeling system of the present embodiment.
  • FIGS. 2 (a) to 2 (c) is a cross-sectional view showing a state in which light is irradiated and a modeling material is supplied in a certain region on the work.
  • 3 (a), 3 (c) and 3 (e) are cross-sectional views showing the process of forming a three-dimensional structure, and are FIGS. 3 (b), 3 (d) and 3 (e).
  • Each of (f) is a plan view which shows the process of forming a three-dimensional structure.
  • FIGS. 4 (a) to 4 (c) is a cross-sectional view showing a process of forming a three-dimensional structure.
  • FIG. 1 is a cross-sectional view showing the structure of the modeling system of the present embodiment.
  • FIGS. 2 (a) to 2 (c) is a cross-sectional view showing a state in which light is irradiated and a modeling material is
  • FIG. 5 is a cross-sectional view showing a work that has been subjected to a separation facilitation process.
  • FIG. 6A is a cross-sectional view showing a work on which a film is formed
  • FIG. 6B is a plan view showing a work on which a film is formed.
  • FIG. 7A is a cross-sectional view showing the light emitted to the modeling surface and the modeling material supplied to the modeling surface
  • FIG. 7B is the light emitted to the modeling surface. It is sectional drawing which shows the modeling material supplied to the modeling surface.
  • 8 (a) and 8 (c) are cross-sectional views showing a molding material solidified so that a film partially remains between the work and the surface of the work
  • FIG. 8 (b) shows the work.
  • FIG. 9 is a plan view showing the movement trajectories of the target irradiation region and the target supply region on the modeling surface.
  • the target irradiation region is irradiated with light at a desired timing while moving each of the target irradiation region and the target supply region from the modeling start position along the Y-axis direction.
  • FIG. 10 (a) and 10 (c) shows a solidified modeling material when one scanning operation of supplying the modeling material to the target supply area is completed, and FIG.
  • FIG. 10B is a cross-sectional view of the target irradiation area and the target supply area from the modeling start position.
  • a cross section showing a solidified modeling material when one scanning operation of irradiating the target irradiation region with light at a desired timing and supplying the modeling material to the target supply region while moving each of them along the Y-axis direction is completed. It is a figure.
  • FIG. 11A is a plan view showing a structural layer of the lowest layer formed by alternately repeating a scanning operation and a stepping operation, and each of FIGS. 11B and 11C It is sectional drawing which shows the structural layer of the lowermost layer formed by repeating a scanning operation and a step operation alternately.
  • FIG. 11A is a plan view showing a structural layer of the lowest layer formed by alternately repeating a scanning operation and a stepping operation
  • FIGS. 11B and 11C It is sectional drawing which shows the structural layer of the lowermost layer formed by repeating a scanning operation and a step
  • FIG. 12 is a cross-sectional view showing a three-dimensional structure formed in a state where a film partially remains between the work and the surface of the work.
  • FIG. 13 is a cross-sectional view showing a three-dimensional structure formed in a state where no film remains between the work and the surface of the work.
  • FIG. 14 is a cross-sectional view showing how the three-dimensional structure is separated from the work.
  • FIG. 15 is a cross-sectional view showing a work on which a film having a surface roughness larger than that of the work is formed.
  • FIG. 16 is a cross-sectional view showing a molding material solidified so that a film partially remains between the work and the surface of the work.
  • FIG. 17 is a cross-sectional view showing a three-dimensional structure formed in a state where a film partially remains between the work and the surface of the work.
  • FIG. 18 is a cross-sectional view showing how the three-dimensional structure is separated from the work.
  • the laser overlay welding method includes direct metal deposition, directed energy deposition, laser cladding, laser engineered net shaping, direct light fabrication, and laser consolidation.
  • Foundation, Shape Deposition Manufacturing, Wire-Feed Laser Deposition, Gas Through Wire, Laser Powder Fusion, Laser Metal Forming, Selective Laser Powder Remelting, Laser Direct -It may also be called casting, laser powder deposition, laser additive manufacturing, or laser rapid forming.
  • each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in the horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). Yes, it is assumed that it is substantially in the vertical direction or the gravity direction).
  • the rotation directions (in other words, the inclination direction) around the X-axis, the Y-axis, and the Z-axis are referred to as the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction, respectively.
  • the Z-axis direction may be the direction of gravity.
  • the XY plane may be horizontal.
  • FIG. 1 is a cross-sectional view showing an example of the structure of the modeling system 1 of the present embodiment.
  • the modeling system 1 is a three-dimensional structure (that is, a three-dimensional object having a size in any of the three-dimensional directions, and a three-dimensional object, in other words, an object having a size in the X, Y, and Z directions. ) ST can be formed.
  • the modeling system 1 can form the three-dimensional structure ST on the work W which is the basis for forming the three-dimensional structure ST (for example, at least one of the base material, the work material, the pedestal, and the workpiece). Is.
  • the modeling system 1 can form a three-dimensional structure ST by performing additional processing on the work W. When the work W is the stage 13 described later, the modeling system 1 can form the three-dimensional structure ST on the stage 13.
  • the modeling system 1 When the work W is an existing structure held by the stage 13 (note that the existing structure may be another three-dimensional structure ST formed by the modeling system 1), the modeling system 1 , The three-dimensional structure ST can be formed on the existing structure. In this case, the modeling system 1 may form a three-dimensional structure ST integrated with the existing structure. The operation of forming the three-dimensional structure ST integrated with the existing structure can be regarded as equivalent to the operation of adding a new structure to the existing structure.
  • the existing structure may be, for example, a repair-required product having a defective portion.
  • the modeling system 1 may form a three-dimensional structure in the repair-required product so as to fill the defective portion of the repair-required product.
  • the modeling system 1 may form a three-dimensional structure ST that can be separated from the existing structure.
  • FIG. 1 shows an example in which the work W is an existing structure held by the stage 13. Further, in the following, the description will proceed with reference to an example in which the work W is an existing structure held by the stage 13.
  • the modeling system 1 can form a modeled object by the laser overlay welding method. That is, it can be said that the modeling system 1 is a 3D printer that forms an object by using the laminated modeling technique.
  • the laminated modeling technique is also referred to as rapid prototyping, rapid manufacturing, or additive manufacturing.
  • the modeling system 1 processes the modeling material M with optical EL to form a modeled object.
  • optical LE for example, at least one of infrared light, visible light, and ultraviolet light can be used, but light of other wavelengths, for example, light having a wavelength in the visible region may be used.
  • the optical EL is a laser beam.
  • the modeling material M is a material that can be melted by irradiation with light EL having a predetermined intensity or higher.
  • a modeling material M for example, at least one of a metallic material and a resin material can be used.
  • the modeling material M a material different from the metallic material and the resin material may be used.
  • the modeling material M is a powdery material. That is, the modeling material M is a powder.
  • the powder may contain a granular material in addition to the powdery material.
  • the modeling material M may contain, for example, a powder having a particle size within the range of 90 micrometers ⁇ 40 micrometers.
  • the average particle size of the powders constituting the modeling material M may be, for example, 75 micrometers or other sizes.
  • the modeling material M does not have to be powder, and for example, a wire-shaped modeling material or a gaseous modeling material may be used.
  • the modeling material M may be processed with an energy beam such as a charged particle beam to form a modeled object.
  • the modeling system 1 includes a modeling head 11, a head drive system 12, a stage 13, and a control device 14, as shown in FIG. Further, the modeling head 11 includes an irradiation system 111 and a material nozzle (that is, at least a part of the supply system for supplying the modeling material M) 112.
  • the modeling system 1 may accommodate the modeling head 11, the head drive system 12, and the stage 13 in a chamber (not shown). Here, the inside of the chamber may be purged with an inert gas such as nitrogen or argon gas.
  • the irradiation system 111 is an optical system (for example, a condensing optical system) for emitting optical EL from the injection unit 113. Specifically, the irradiation system 111 is optically connected to a light source (not shown) that emits an optical EL via an optical transmission member (not shown) such as an optical fiber. The irradiation system 111 emits optical EL propagating from the light source via the optical transmission member. The irradiation system 111 irradiates the light EL downward (that is, the ⁇ Z side) from the irradiation system 111. A stage 13 is arranged below the irradiation system 111.
  • the irradiation system 111 can irradiate the work W with light EL. Specifically, the irradiation system 111 irradiates the irradiation area EA having a predetermined shape set on the work W as the area where the light EL is irradiated (typically, the light is focused). Further, the state of the irradiation system 111 can be switched between a state in which the irradiation region EA is irradiated with the light EL and a state in which the irradiation region EA is not irradiated with the light EL under the control of the control device 14.
  • the direction of the light EL emitted from the irradiation system 111 is not limited to the direction directly below (that is, the direction corresponding to the Z axis), and may be, for example, a direction tilted by a predetermined angle with respect to the Z axis. ..
  • the irradiation region EA may be, for example, a circular region or another shape (for example, a rectangular shape).
  • the material nozzle 112 has a supply outlet (that is, a supply port) 114 for supplying the modeling material M.
  • the material nozzle 112 supplies the molding material M from the supply outlet 114 (eg, injection, ejection or injection).
  • the material nozzle 112 is physically connected to a material supply device (not shown) that is a supply source of the modeling material M.
  • a powder transmission member such as a pipe (not shown) may be interposed between the material supply device and the material nozzle.
  • the material nozzle 112 supplies the modeling material M supplied from the material supply device via the powder transmission member.
  • the material nozzle 112 is drawn in a tube shape.
  • the shape of the material nozzle 112 is not limited to this tube shape.
  • the material nozzle 112 supplies the modeling material M downward (that is, the ⁇ Z side).
  • a stage 13 is arranged below the material nozzle 112.
  • the material nozzle 112 supplies the modeling material M toward the work W.
  • the traveling direction of the modeling material M supplied from the material nozzle 112 is a direction inclined by a predetermined angle (an acute angle as an example) with respect to the Z axis, but is directly below (that is, a direction corresponding to the Z axis). You may.
  • a plurality of material nozzles 112 may be provided.
  • the material nozzle 112 is aligned with respect to the irradiation system 111 so that the irradiation system 111 supplies the modeling material M toward the irradiation region EA that irradiates the light EL. That is, the material nozzle 112 and the irradiation area are irradiated so that the supply area MA and the irradiation area EA set on the work W as the area where the material nozzle 112 supplies the modeling material M coincide with (or at least partially overlap) with each other.
  • the system 111 is aligned with the system 111.
  • the material nozzle 112 may be aligned so as to supply the modeling material M to the molten pool MP formed in the work W by the light EL emitted from the irradiation system 111. Further, the supply region MA to which the material nozzle 112 supplies the modeling material M and the region of the molten pool MP may be aligned so as to partially overlap each other.
  • the head drive system 12 moves the modeling head 11.
  • the head drive system 12 moves the modeling head 11 along the X-axis, the Y-axis, and the Z-axis, respectively.
  • the head drive system 12 may move the modeling head 11 along at least one rotation direction in the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction in addition to the X-axis, the Y-axis, and the Z-axis, respectively.
  • the head drive system 12 may rotate the modeling head 11 around at least one of the X-axis, Y-axis, and Z-axis.
  • the head drive system 12 may change the posture of the modeling head 11 around at least one of the X-axis, the Y-axis, and the Z-axis.
  • the head drive system 12 includes an actuator such as a motor, for example.
  • the head drive system 12 moves the modeling head 11, the irradiation region EA also moves on the work W with respect to the work W. Therefore, the head drive system 12 can change the positional relationship between the work W and the irradiation area EA (in other words, the positional relationship between the stage 13 holding the work W and the irradiation area EA) by moving the modeling head 11. Is. Further, the head drive system 12 can change the positional relationship between the work W and the supply area MA (in other words, the positional relationship between the stage 13 holding the work W and the supply area MA) by moving the modeling head 11. Is.
  • the head drive system 12 may move the irradiation system 111 and the material nozzle 112 separately. Specifically, for example, the head drive system 12 adjusts at least one of the position of the injection unit 113, the direction (or posture) of the injection unit 113, the position of the supply outlet 114, and the direction (or posture) of the supply outlet 114. It may be possible. In this case, the irradiation region EA in which the irradiation system 111 irradiates the light EL and the supply region MA in which the material nozzle 112 supplies the modeling material M can be controlled separately.
  • Stage 13 can hold the work W. However, the stage 13 does not have to be able to hold the work W. In this case, the work W may be placed on the stage 13. At this time, the work W may be mounted on the stage 13 without being clamped. Alternatively, the work W may be supported by the stage 13. Further, when the work W is held, the stage 13 can release the held work W.
  • the irradiation system 111 described above irradiates the optical EL at least for a part of the period during which the stage 13 holds the work W. Further, the material nozzle 112 described above supplies the modeling material M for at least a part of the period during which the stage 13 holds (or places or supports) the work W.
  • a part of the modeling material M supplied by the material nozzle 112 may be scattered or spilled from the surface of the work W to the outside of the work W (for example, around the stage 13). Therefore, the modeling system 1 may be provided with a recovery device for collecting the scattered or spilled modeling material M around the stage 13.
  • the control device 14 controls the operation of the modeling system 1.
  • the control device 14 may include, for example, an arithmetic unit such as at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit), and a storage device such as a memory.
  • the control device 14 functions as a device that controls the operation of the modeling system 1 by executing a computer program by an arithmetic unit such as a CPU.
  • This computer program is a computer program for causing the control device 14 (for example, the CPU) to perform (that is, execute) the operation described later to be performed by the control device 14. That is, this computer program is a computer program for causing the control device 14 to function so that the modeling system 1 performs an operation described later.
  • the computer program executed by the arithmetic unit may be recorded in a memory (that is, a recording medium) included in the control device 14, or may be an arbitrary storage medium built in the control device 14 or externally attached to the control device 14. It may be recorded in (for example, a hard disk or a semiconductor memory). Alternatively, the arithmetic unit may download the computer program to be executed from an external device of the control device 14 via the network interface.
  • a memory that is, a recording medium included in the control device 14
  • the arithmetic unit may download the computer program to be executed from an external device of the control device 14 via the network interface.
  • the control device 14 controls the emission mode of the optical EL by the irradiation system 111.
  • the injection mode includes, for example, at least one of the intensity of the optical EL and the injection timing of the optical EL.
  • the emission mode may include, for example, the length of the emission time of the pulsed light and the ratio to the emission period of the pulsed light (so-called duty ratio). Further, the injection mode may include, for example, the length of the emission time of the pulsed light itself or the emission cycle itself.
  • the control device 14 controls the movement mode of the modeling head 11 by the head drive system 12.
  • the movement mode includes, for example, at least one of a movement amount, a movement speed, a movement direction, and a movement timing. Further, the control device 14 controls the supply mode of the modeling material M by the material nozzle 112.
  • the supply mode includes, for example, a supply amount (particularly, a supply amount per unit time).
  • the control device 14 does not have to be provided inside the modeling system 1, and may be provided as a server or the like outside the modeling system 1, for example.
  • the control device 14 and the modeling system 1 may be connected by a wired and / or wireless network (or a data bus and / or a communication line).
  • a wired network for example, a network using a serial bus type interface represented by at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485 and USB may be used.
  • a network using a parallel bus interface may be used.
  • a network using an Ethernet (registered trademark) compliant interface represented by at least one of 10BASE-T, 100BASE-TX and 1000BASE-T may be used.
  • a network using radio waves may be used.
  • An example of a network using radio waves is a network conforming to IEEE802.1x (for example, at least one of wireless LAN and Bluetooth®).
  • a network using infrared rays may be used.
  • a network using optical communication may be used.
  • the control device 14 and the modeling system 1 may be configured so that various types of information can be transmitted and received via the network. Further, the control device 14 may be able to transmit information such as commands and control parameters to the modeling system 1 via the network.
  • the modeling system 1 may include a receiving device that receives information such as commands and control parameters from the control device 14 via the network.
  • a part of the control device 14 may be provided inside the modeling system 1, and a part of the control device 14 may be provided outside the modeling system 1.
  • the recording medium for recording the computer program executed by the arithmetic unit includes CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD + R, and DVD-. At least one of optical disks such as RW, DVD + RW and Blu-ray (registered trademark), magnetic media such as magnetic tape, magneto-optical disks, semiconductor memory such as USB memory, and any other medium capable of storing a program is used. You may.
  • the recording medium may include a device capable of recording a computer program (for example, a general-purpose device or a dedicated device in which the computer program is implemented in at least one form such as software and firmware).
  • each process or function included in the computer program may be realized by a logical processing block realized in the control device 14 by the control device 14 (that is, a computer) executing the computer program. It may be realized by hardware such as a predetermined gate array (FPGA, ASIC) included in the control device 14, or a logical processing block and a partial hardware module that realizes a part of the hardware are mixed. It may be realized in the form of.
  • FPGA predetermined gate array
  • ASIC logical processing block and a partial hardware module that realizes a part of the hardware are mixed. It may be realized in the form of.
  • the modeling system 1 performs a modeling operation for forming the three-dimensional structure ST.
  • the modeling system 1 forms the three-dimensional structure ST by the laser overlay welding method. Therefore, the modeling system 1 may form the three-dimensional structure ST by performing an existing modeling operation based on the laser overlay welding method.
  • an example of the modeling operation of the three-dimensional structure ST by the laser overlay welding method will be briefly described.
  • the modeling system 1 forms the three-dimensional structure ST on the work W based on the three-dimensional model data (for example, CAD (Computer Aided Design) data) of the three-dimensional structure ST to be formed.
  • the three-dimensional model data includes data representing the shape (particularly, the three-dimensional shape) of the three-dimensional structure ST.
  • the measurement data of the three-dimensional object measured by the measuring device provided in the modeling system 1 may be used.
  • the measurement data of the three-dimensional shape measuring machine provided separately from the modeling system 1 may be used.
  • a contact type three-dimensional measuring machine and a non-contact type three-dimensional measuring machine having a probe that can move with respect to the work W and can contact the work W.
  • a non-contact type 3D measuring machine a pattern projection type 3D measuring machine, an optical cutting type 3D measuring machine, a time of flight type 3D measuring machine, and a moiretopography type 3D measuring machine
  • the design data of the 3D structure ST may be used.
  • the modeling system 1 sequentially forms, for example, a plurality of layered partial structures (hereinafter referred to as "structural layers") SLs arranged along the Z-axis direction.
  • structural layers layered partial structures
  • the modeling system 1 sequentially forms a plurality of structural layers SL obtained by cutting the three-dimensional structure ST into round slices along the Z-axis direction.
  • the three-dimensional structure ST which is a laminated structure in which a plurality of structural layers SL are laminated, is formed.
  • the flow of the operation of forming the three-dimensional structure ST by forming the plurality of structural layers SL one by one in order will be described.
  • each structural layer SL Under the control of the control device 14, the modeling system 1 sets an irradiation region EA in a desired region on the modeling surface MS corresponding to the surface of the work W or the surface of the formed structural layer SL, and the irradiation region EA is set with respect to the irradiation region EA.
  • the light EL is irradiated from the irradiation system 111.
  • the region occupied by the light EL emitted from the irradiation system 111 on the modeling surface MS may be referred to as an irradiation region EA.
  • the modeling system 1 does not have to set the irradiation region EA in the desired region on the modeling surface MS.
  • the region occupied by the light EL irradiated from the irradiation system 111 on the modeling surface MS may be referred to as the irradiation region EA.
  • the focus position FP of the optical EL (that is, the condensing position, in other words, the position where the optical EL is most convergent in the Z-axis direction or the traveling direction of the optical EL) coincides with the modeling surface MS. ing.
  • the focus position FP of the optical EL may be set to a position deviated from the modeling surface MS in the Z-axis direction.
  • a pool of liquid metal or resin melted by the optical EL in a desired region on the modeling surface MS by the optical EL emitted from the irradiation system 111. ) MP is formed.
  • the modeling system 1 sets a supply region MA in a desired region on the modeling surface MS under the control of the control device 14, and supplies the modeling material M to the supply region MA from the material nozzle 112.
  • the modeling system 1 does not have to set the supply region MA in the desired region on the modeling surface MS.
  • the region to which the modeling material M is supplied from the material nozzle 112 may be referred to as a supply region MA.
  • the supply region MA is set to the region where the molten pool MP is formed.
  • the supply region MA coincides with the region where the molten pool MP is formed. Therefore, as shown in FIG. 2B, the modeling system 1 supplies the modeling material M to the molten pool MP from the material nozzle 112. As a result, the modeling material M supplied to the molten pool MP melts. When the molten pool MP is no longer irradiated with light EL due to the movement of the modeling head 11, the modeling material M melted in the molten pool MP is cooled and solidified (that is, solidified). As a result, as shown in FIG.
  • the solidified modeling material M is deposited on the modeling surface MS.
  • a model is formed by the deposit of the solidified model material M.
  • a series of modeling processes including formation of the molten pool MP by such light irradiation EL, supply of the modeling material M to the molten pool MP, melting of the supplied modeling material M, and solidification of the molten modeling material M are performed. It is repeated while changing the position of the modeling head 11 in the XY plane with respect to the surface MS. In other words, while moving the modeling head 11 relative to the modeling surface MS along the XY plane, the formation of the molten pool MP, the supply of the modeling material M, the melting of the modeling material M, and the melting of the molten modeling material M A series of modeling processes including solidification are repeated.
  • the irradiation region EA also moves with respect to the modeling surface MS.
  • a series of modeling processes is repeated while moving the irradiation region EA relative to the modeling surface MS along the XY plane (that is, in the two-dimensional plane).
  • the optical EL selectively irradiates the irradiation region EA set in the region where the modeled object should be formed, while the light EL is applied to the irradiation region EA set in the region where the modeled object should not be formed. Is not selectively irradiated. It can also be said that the irradiation region EA is not set in the region where the modeled object should not be formed.
  • the modeling system 1 moves the irradiation region EA along the predetermined movement locus on the modeling surface MS, and transfers the optical EL to the modeling surface MS at a timing according to the distribution mode of the region on which the modeled object should be formed. Irradiate.
  • the modeling system 1 moves a region to be irradiated with the light EL along a predetermined movement locus on the modeling surface MS, and when the region is located in the region where the modeled object should be formed, the light is emitted.
  • the EL is applied to the modeling surface MS.
  • a structural layer SL corresponding to an aggregate of the modeled objects made of the solidified modeling material M is formed on the modeling surface MS.
  • the irradiation area EA is moved with respect to the modeling surface MS, but the modeling surface MS may be moved with respect to the irradiation area EA.
  • the mode of distribution of the region where the modeled object is to be formed may be referred to as a distribution pattern or a pattern of the structural layer SL.
  • the modeling system 1 repeatedly performs the operation for forming such a structural layer SL under the control of the control device 14 based on the three-dimensional model data.
  • the control device 14 first inputs the three-dimensional model data at a stacking pitch.
  • Slice processing is performed to create slice data.
  • the control device 14 may modify the slice data at least partially according to the characteristics of the modeling system 1.
  • the modeling system 1 corresponds to the operation for forming the first structural layer SL # 1 on the modeling surface MS corresponding to the surface WS of the work W under the control of the control device 14.
  • the structural layer SL # 1 is formed on the modeling surface MS as shown in FIGS. 3 (a), 3 (b) and 4 (a).
  • the modeling system 1 sets the surface (typically, the upper surface) of the structural layer SL # 1 on the new modeling surface MS, and then sets the second structural layer SL # on the new modeling surface MS.
  • Form 2 the control device 14 first controls the head drive system 12 so that the modeling head 11 moves along the Z axis.
  • the control device 14 controls the head drive system 12 so that the irradiation region EA and the supply region MA are set on the surface of the structural layer SL # 1 (that is, the new modeling surface MS).
  • the modeling head 11 is moved toward the + Z side.
  • the focus position FP of the optical EL matches the new modeling surface MS.
  • the modeling system 1 operates on the structural layer SL # 1 based on the slice data corresponding to the structural layer SL # 2 in the same operation as the operation of forming the structural layer SL # 1 under the control of the control device 14.
  • the structural layer SL # 2 is formed on the surface.
  • the structural layer SL # 2 is formed as shown in FIGS. 3 (c), 3 (d) and 4 (b).
  • the same operation is repeated until all the structural layers SL constituting the three-dimensional structure to be formed on the work W are formed.
  • a plurality of ridges are formed along the Z axis (that is, along the direction from the bottom surface to the top surface of the molten pool MP).
  • the three-dimensional structure ST is formed by the laminated structure in which the structural layer SL is laminated.
  • the modeling system 1 models the work W that has been subjected to the separation facilitation process to facilitate the separation of the three-dimensional structure ST formed on the work W from the work W.
  • the operation may be performed. That is, in the present embodiment, the above-mentioned work W itself that has not been subjected to the separation facilitation treatment may be used as a modeling base for forming a modeled object, or the work that has been subjected to the separation facilitation treatment. W may be used as a modeling base for forming a modeled object.
  • the separation of the three-dimensional structure ST from the work W becomes easier as compared with the case where the three-dimensional structure ST is formed on the work W that has not been subjected to the separation facilitation treatment.
  • the separation facilitation treatment reduces the bonding force (in other words, adhesive force or bonding force) between the three-dimensional structure ST formed on the work W and the work W as compared with the case where the separation facilitation treatment is not performed. It may include a process for weakening. In this case, the three-dimensional structure ST can be easily separated from the work W by the weakening of the coupling force between the three-dimensional structure ST and the work W.
  • the connection between the 3D structure ST and the work W that is, the strong bonding between the 3D structure ST and the work W
  • the connection between the 3D structure ST and the work W is one of the factors that make it difficult to separate the 3D structure ST from the work W.
  • the separation facilitation process reduces the area of the bonding surface between the three-dimensional structure ST and the work W. May include processing for.
  • the separation facilitation process may include a process for reducing the portion where the three-dimensional structure ST and the work W are connected.
  • the separation facilitation treatment As an example of the separation facilitation treatment, as shown in FIG. 5, which is a cross-sectional view showing the work W subjected to the separation facilitation treatment, there is a treatment of forming a film C on the surface WS of the work W.
  • the work W in which the film C is formed on the surface WS is used as a modeling base.
  • the modeling base may include a work W as a base material and a film C formed on the surface WS of the work W.
  • the work W as a base material may be used as a base for modeling.
  • the process of forming the film C on the surface WS of the work W can be an example of the separation facilitation process.
  • the film C may be formed on the surface WS of the work W by performing a surface treatment on the surface WS of the work W.
  • the surface treatment is performed by a surface treatment device (not shown) different from the modeling system 1.
  • the surface treatment may be performed by the modeling system 1 (particularly, the surface treatment device included in the modeling system 1).
  • the surface treatment may include a film forming treatment for forming a desired film on the surface of the object.
  • the surface treatment may include at least one of physical treatment, chemical treatment, electrical treatment, magnetic treatment, thermal treatment and optical treatment.
  • plating treatment for example, at least one of physical vapor deposition treatment (PVD) and chemical vapor deposition treatment (CVD)
  • vapor deposition treatment for example, at least one of physical vapor deposition treatment (PVD) and chemical vapor deposition treatment (CVD)
  • sputtering treatment for example, at least one of physical vapor deposition treatment (PVD) and chemical vapor deposition treatment (CVD)
  • sputtering treatment for example, at least one of physical vapor deposition treatment (PVD) and chemical vapor deposition treatment (CVD)
  • sputtering treatment for example, at least one of physical vapor deposition treatment (PVD) and chemical vapor deposition treatment (CVD)
  • spraying treatment for example, sputtering treatment, spraying treatment and At least one of the bright treatments.
  • the film thickness of the film C (specifically, the size in the Z-axis direction of FIG. 5) is arbitrary.
  • the film thickness of the film C may be several micrometers, a dozens of micrometers, or a few tens of micrometers.
  • At least a part of the surface of the film C may be a flat surface. At least a part of the surface of the film C may be a plane parallel to the XY plane (that is, a horizontal plane). However, at least a part of the surface of the film C may be a curved surface. At least a part of the surface of the film C may be an inclined surface. At least a part of the surface of the film C may be an inclined surface inclined with respect to the X axis. At least a part of the surface of the film C may be an inclined surface inclined with respect to the Y axis. At least a part of the surface of the film C may be an inclined surface inclined with respect to the Z axis. At least a part of the surface of the film C may be an uneven surface.
  • the characteristics of the film C formed on the surface WS of the work W may be different from the characteristics of the work W.
  • the film C may be made of a material having properties different from those of the material constituting the work W.
  • the characteristics of the film C may be different from the characteristics of the modeling material M.
  • the film C may be made of a material having properties different from those of the modeling material M.
  • the characteristics of the film C may be different from the characteristics of the three-dimensional structure ST. That is, the characteristics of the film C may be different from those of at least one of the work W, the modeling material M, and the three-dimensional structure ST.
  • the property may include at least one of melting point and surface roughness. That is, the characteristics of the film C may include at least one of the melting point of the film C and the surface roughness of the film C.
  • the characteristics of the work W may include at least one of the melting point of the work W and the surface roughness of the work W.
  • the characteristics of the modeling material M may include at least one of the melting point of the modeling material M and the surface roughness of the modeling material M.
  • the characteristics of the three-dimensional structure ST may include at least one of the melting point of the three-dimensional structure ST and the surface roughness of the three-dimensional structure ST.
  • the melting point of the film C may be different from the melting point of at least one of the work W, the modeling material M, and the three-dimensional structure ST.
  • the characteristics of the film C include the surface roughness of the film C
  • the surface roughness of the film C may be different from the surface roughness of at least one of the work W, the modeling material M, and the three-dimensional structure ST. ..
  • the modeling operation performed on the work W on which the film C having a melting point different from at least one melting point of the work W, the modeling material M and the three-dimensional structure ST is formed, and the work W, the modeling material M and 3 The modeling operation performed on the work W on which the film C having the surface roughness different from the surface roughness of at least one of the three-dimensional structure ST is formed will be described in order, and from the work W of the three-dimensional structure ST.
  • film C1 a film C having a melting point different from at least one melting point of the work W, the modeling material M, and the three-dimensional structure ST
  • film C2 a film C having a surface roughness different from at least one surface roughness of the work W, the modeling material M, and the three-dimensional structure ST is referred to as “film C2”.
  • the melting point of the film C1 is higher than the melting point of the work W. May be good. That is, a film C1 having a melting point higher than the melting point of the work W may be formed on the surface WS of the work W. Further, the melting point of the film C1 may be higher than the melting point of the modeling material M and the three-dimensional structure ST. In the following description, the description will proceed using an example in which the melting point of the film C1 is higher than the melting points of the work W, the modeling material M, and the three-dimensional structure ST.
  • a film C1 is a plating film containing chromium.
  • the plating film containing chromium may be formed by a plating process.
  • the melting point of the chromium-containing plating film is approximately 1880 degrees Celsius to 1900 degrees Celsius. Therefore, when a plating film containing chromium is used as the film C1, a work W having a melting point of about 1880 degrees Celsius to lower than 1900 degrees Celsius may be used.
  • a work composed of steel having a melting point of approximately 1400 degrees Celsius to 1510 degrees Celsius has a melting point of approximately 1371 degrees Celsius to 1508 degrees Celsius.
  • At least one of a workpiece made of stainless steel and a workpiece made of titanium steel having a melting point of approximately 1668 degrees Celsius can be mentioned.
  • the steel material carbon steel (so-called SC material, for example, S50C), chrome molybdenum steel (so-called SCM material, for example, SCM440, etc.), carbon tool steel (so-called SK material), and alloy tool steel.
  • Carbon steel is an alloy in which carbon is added to iron.
  • Chromium molybdenum steel is an alloy in which at least one of chromium and molybdenum is added to iron.
  • Carbon tool steel is an alloy in which at least one of carbon, silicon and manganese is added to iron.
  • Alloy tool steel is an alloy in which at least one of tungsten, molybdenum, chromium, silicon, vanadium and nickel is added to carbon tool steel.
  • stainless steel an austenite-based stainless steel having a melting point of about 1371 degrees to 1400 degrees Celsius (for example, SUS316) and a ferrite-based stainless steel having a melting point of about 1440 degrees to 1508 degrees Celsius (for example, SUS430). ), And at least one of martensitic stainless steels (eg, SUS440C).
  • the modeling material M a material having a melting point of about 1880 degrees Celsius to lower than 1900 degrees Celsius may be used.
  • a material having a melting point of approximately 1880 degrees Celsius to lower than 1900 degrees Celsius may be the same as a material constituting a work W having a melting point of approximately 1880 degrees Celsius to lower than 1900 degrees Celsius, and thus detailed description thereof will be omitted. To do.
  • the film C1 is a plating film containing nickel in addition to or in place of chromium.
  • the nickel-containing plating film may be formed by, for example, a plating process (for example, an electroplating process). Since the melting point of the nickel-containing plating film is approximately 1450 degrees Celsius, when the nickel-containing plating film is used as the film C1, a work W having a melting point lower than approximately 1450 degrees Celsius may be used. As an example of the work W having a melting point lower than 1450 degrees Celsius, at least one of the above-mentioned work made of steel and the above-mentioned work made of stainless steel can be mentioned.
  • a material having a melting point lower than 1450 degrees Celsius may be used as the modeling material M.
  • a material having a melting point lower than approximately 1450 degrees Celsius may be the same as a material constituting the work W having a melting point lower than approximately 1450 degrees Celsius, and thus detailed description thereof will be omitted.
  • the film C1 is a film containing titanium nitride.
  • the film containing titanium nitride may be formed by, for example, a sputtering process. Since the melting point of the film containing titanium nitride is approximately 2950 degrees Celsius, when the film containing titanium nitride is used as the film C1, a work W having a melting point lower than approximately 2950 degrees Celsius may be used. As an example of the work W having a melting point lower than 2950 degrees Celsius, at least one of the above-mentioned work made of steel and the above-mentioned work made of stainless steel can be mentioned.
  • a work W having a melting point of about 2950 degrees Celsius is a work made of ceramic having a melting point of about 2050 degrees Celsius.
  • An example of a ceramic is a ceramic containing aluminum oxide (so-called alumina) (for example, at least one of alumina 96 and alumina 99.5).
  • alumina aluminum oxide
  • a material having a melting point lower than 2950 degrees Celsius may be used as the modeling material M.
  • a material having a melting point lower than 2950 degrees Celsius may be the same as a material constituting the work W having a melting point lower than 2950 degrees Celsius, and thus detailed description thereof will be omitted.
  • the film C1 is a film containing titanium borohydride.
  • the film C1 may be formed by, for example, at least one of a sputtering treatment and a vapor deposition treatment. Since the melting point of the film containing titanium booxide is approximately 3230 degrees Celsius, when the film containing titanium booxide is used as the film C1, a work W having a melting point lower than approximately 3230 degrees Celsius may be used. ..
  • the film C1 is a film containing titanium carbide.
  • the film C1 may be formed by, for example, at least one of a sputtering treatment and a vapor deposition treatment. Since the melting point of the film containing titanium carbide is approximately 3170 degrees Celsius, when the film containing titanium carbide is used as the film C1, a work W having a melting point lower than approximately 3170 degrees Celsius may be used.
  • the film C1 a film containing DLC (Diamond Like Carbon: diamond-like carbon) and a film containing ceramic can be mentioned.
  • the film containing the DLC may be formed by, for example, at least one of a sputtering treatment and a vapor deposition treatment.
  • the film containing ceramic may be formed, for example, by thermal spraying.
  • the melting point of the film C is higher than the melting point of at least one of the work W, the modeling material M and the three-dimensional structure ST
  • the melting point of the film C is higher than the melting point of the work W, the modeling material M and the three-dimensional structure ST.
  • the film C is less likely to be melted by irradiation with light EL.
  • at least a part of the film C tends to remain between the work W and the three-dimensional structure ST.
  • the reason why at least a part of the film C remains between the work W and the three-dimensional structure ST will be described with reference to FIGS. 6 to 14.
  • the modeling system 1 When starting the modeling operation on the work W on which the film C1 is formed, the modeling system 1 first forms the lowest structural layer SL (that is, the structural layer SL # 1) on the work W. In this case, the modeling system 1 sets the surface WS of the work W to the modeling surface MS. However, since the film C1 is formed on the surface WS of the work W, the modeling system 1 may set the modeling surface MS between the surface of the film C1 or the surface of the film C1 and the surface WS of the work W. ..
  • the modeling system 1 moves the modeling head 11 to the modeling start position so that the modeling head 11 can irradiate the modeling start region MS_start of the modeling surface MS with light EL and supply the modeling material M.
  • the region where the irradiation system 111 can irradiate the light EL that is, the region where the irradiation system 111 is scheduled to irradiate the light EL.
  • the target irradiation region EA_start which is, is set in the modeling start region MS_start. Further, as shown in FIGS.
  • the target supply area MA_start is set in the modeling start area MS_start.
  • 6 (a) is a cross-sectional view showing the work W on which the film C1 is formed
  • FIG. 6 (b) is a plan view showing the work W on which the film C1 is formed.
  • FIGS. 7 (a) and 7 (b) irradiation of the modeling surface MS with optical EL and supply of the modeling material M are started.
  • 7 (a) is a cross-sectional view showing an optical EL irradiated to the modeling surface MS and a modeling material M supplied to the modeling surface
  • FIG. 7 (b) is a cross-sectional view showing the modeling surface MS. It is sectional drawing which shows the light EL to which it irradiates, and the modeling material M supplied to the modeling surface. As a result, a molten pool MP is formed.
  • the film C1 is formed on the surface WS of the work W, the light EL is actually irradiated to the film C1 and the modeling material M is supplied to the film C1. Therefore, as shown in FIGS. 7 (a) and 7 (b), the molten pool MP is formed on the film C1. Further, since the melting point of the film C1 is higher than the melting point of the work W (that is, the film C1 is difficult to melt), the film C1 is the case where the work W on which the film C1 is not formed is directly irradiated with light EL. It does not melt as much as work W.
  • the film C1 irradiated with the light EL is melted, the other part of the film C1 irradiated with the light EL is not melted.
  • the work W in the film C1 and the work W in the film C1 and a part of the film portion irradiated with the light EL having an energy amount sufficient to melt the modeling material M are melted.
  • the other part of the film portion irradiated with the optical EL having an amount of energy sufficient to melt the modeling material M is not melted.
  • the film C1 partially melts in a limited area near the center of the optical EL spot. Therefore, the size (specifically, the diameter) R2 of the molten portion of the membrane C1 is smaller than the size (specifically, the diameter) R1 of the molten pool MP.
  • the unmelted film C1 partially remains between the molten pool MP and the surface WS of the work W.
  • the molten pool MP includes a pond portion MP1 exposed on the membrane C1 and a pond portion MP2 formed in a through hole formed in the membrane C1 by melting the membrane C1.
  • the unmelted film C1 partially remains between the pond portion MP1 and the work W. Therefore, the pond portion MP1 does not come into contact with the surface WS of the work W.
  • the pond portion MP2 contacts the surface WS of the work W through the through hole.
  • the bottom surface of the molten pool MP faces the work W through a surface portion facing the film C1 (that is, the bottom surface of the pond portion MP1) and a through hole formed in the film C1 by melting the film C1.
  • the surface portion (that is, the bottom surface of the pond portion MP2) is included. Since the size R2 of the molten portion of the membrane C1 is smaller than the size R1 of the molten pool MP, the through hole formed in the membrane C1 is compared with the size R1 of the pond portion MP1 exposed on the membrane C1. The size R2 of the pond portion MP2 formed inside becomes smaller.
  • FIGS. 8 (a) to 8 (c) are cross-sectional views showing a molding material M solidified so that the film C1 partially remains between the work W and the surface WS of the work W.
  • FIGS. 8 (a) to 8 (c) are cross-sectional views showing a molding material M solidified so that the film C1 partially remains between the work W and the surface WS of the work W.
  • (B) is a plan view showing a modeling material M solidified so that the film C1 partially remains between the work W and the surface WS.
  • the solidified modeling material M has a modeling portion M1 exposed on the film C1 and a modeling portion M2 formed on the work W through a through hole formed in the film C1 by melting and removing the film C1. And include.
  • the lower surface of the solidified modeling material M (that is, the surface facing the ⁇ Z side) is formed on the film C1 by melting the surface portion facing the film C1 (that is, the lower surface of the modeling portion M1) and the film C1. It includes a surface portion facing the work W (that is, the lower surface of the modeling portion M2) through the through hole.
  • the modeling portion M2 formed in the through hole formed in the film C1 may contain a material constituting the film C1.
  • the removal of the film C1 from the through hole not only completely removes the film C1 from the through hole, but also at least partially removes the film C1 from the through hole to the extent that the modeling portion MP2 is formed in the through hole. It may also mean that it is done.
  • the modeled portion M1 is a modeled object formed mainly by solidifying the pond portion MP1 exposed on the film C1.
  • the modeled portion M2 is a modeled object formed mainly by solidifying the pond portion MP2 formed in the through hole formed in the film C1. Since the size R2 of the pond portion MP2 is smaller than the size R1 of the pond portion MP1, the size D2 of the modeling portion M2 is smaller than the size D1 of the modeling portion M1. In this case, typically, the size D1 of the modeling portion M1 is larger than the size R2 of the pond portion MP2 for forming the modeling portion M2.
  • the size of the modeling portion is the size in at least one of a plurality of directions along the modeling surface MS (in the examples shown in FIGS.
  • the size of the modeled object composed of the solidified modeling material M shall mean the size in at least one of a plurality of directions along the modeling surface MS. ..
  • the modeling material M is typically solidified so as to be bonded to the work W. That is, the modeling portion MP2 solidifies so as to be combined with the work W.
  • the modeling portion MP2 penetrates the membrane C1 (in other words, penetrates) and solidifies so as to be bonded to the work W.
  • the unmelted film C1 remains between the modeling portion MP1 and the work W. That is, the modeling portion MP1 and the work W are separated from each other.
  • the modeling portion MP1 is bonded to the modeling portion MP2, the modeling portion MP1 is fixed to the work W via the modeling portion MP2, and then, as described above, the light irradiation EL is used.
  • a series of modeling processes including formation of the molten pool MP, supply of the modeling material M to the molten pool MP, melting of the supplied modeling material M, and solidification of the molten modeling material M are performed by XY of the modeling head 11 with respect to the modeling surface MS. It is repeated while changing the position in the plane.
  • the positions of the target irradiation area EA_taget and the target supply area MA_target on the modeling surface MS change, as shown in FIG. Therefore, a series of modeling processes is repeated while changing the positions of the target irradiation region EA_taget and the target supply region MA_taget on the modeling surface MS.
  • the structural layer SL is formed on the modeling surface MS by alternately repeating the scanning operation and the step operation.
  • the scanning operation the target irradiation area EA_taget and the target supply area MA_taget are each moved along the Y-axis direction on the modeling surface MS, and the light EL is irradiated to the target irradiation area EA_taget at a desired timing, and the modeling material M is targeted.
  • This is an operation of supplying to the supply area MA_target.
  • the step operation is an operation of moving each of the target irradiation region EA_target and the target supply region MA_target along at least the X-axis direction on the modeling surface MS. Therefore, as shown in FIG.
  • the movement loci of the target irradiation region EA_target and the target supply region MA_target alternate on the modeling surface MS with the movement locus along the Y-axis direction and the movement locus along the X-axis direction. Included in.
  • the movement trajectories of the target irradiation region EA_target and the target supply region MA_target on the modeling surface MS substantially coincide with the movement loci of the modeling head 11 by the drive system 12 in the XY plane.
  • the irradiation region EA described above may mean a target irradiation region EA_target, or may mean a region where the light EL is actually irradiated.
  • the above-mentioned supply region MA may mean a target supply region MA_taget, or may mean a region where the modeling material M is actually supplied.
  • FIGS. 10 (a) to 10 (c) show the optical EL at a desired timing while moving each of the target irradiation area EA_taget and the target supply area MA_taget from the modeling start position MS_start along the Y-axis direction. Is shown, and the solidified modeling material M is shown when one scanning operation of irradiating the target supply area MA_taget with the modeling material M is completed. As shown in FIGS. 10 (a) to 10 (c), a film that did not melt between the solidified modeling material M and the surface WS of the work W even when one scanning operation was completed. C1 remains partially.
  • the film C1 of the solidified modeling material M is formed on the film C1 of the solidified modeling material M as compared with the size of the portion of the solidified modeling material M exposed on the film C1 (that is, the portion composed of the above-mentioned modeling portion M1).
  • the size of the portion formed in the through hole becomes smaller.
  • the film C1 of the solidified modeling material M is compared with the size of the portion of the solidified modeling material M exposed on the film C1 in the Y-axis direction.
  • the size of the portion formed in the formed through hole in the Y-axis direction becomes smaller.
  • the through hole formed in the film C1 of the solidified modeling material M is compared with the size of the portion of the solidified modeling material M exposed on the film C1 in the X-axis direction.
  • the size of the portion formed inside in the X-axis direction becomes smaller.
  • the solidified modeling material M is bonded to the work W through the portion of the solidified modeling material M formed in the through hole formed in the film C1.
  • the size of the joint surface between the solidified modeling material M and the surface WS of the work W in the Y-axis direction is smaller than the size of the surface of the solidified modeling material M in the Y-axis direction.
  • the size of the joint surface between the solidified modeling material M and the surface WS of the work W in the X-axis direction is larger than the size of the surface of the solidified modeling material M in the X-axis direction. It becomes smaller.
  • FIGS. 11 (a) to 11 (c) show the lowermost structural layer SL # 1 formed by alternately repeating the scanning operation and the step operation.
  • the unmelted film C1 partially remains between the structural layer SL # 1 and the surface WS of the work W.
  • the structural layer SL # 1 is a layer portion SL1 # 1 formed on the film C1 and a layer portion SL2 # formed on the work W via a through hole formed in the film C1 by melting the film C1. Includes 1 and.
  • the structural layer SL # 1 includes a layer portion SL1 # 1 exposed on the film C1 and a layer portion SL2 # 1 formed in a through hole formed in the film C1.
  • the layer portion SL1 # 1 which is a part of the structural layer SL # 1, is formed on the residual film C1.
  • the lower surface of the structural layer SL # 1 (that is, the surface facing the ⁇ Z side) is formed by melting the surface portion facing the film C1 (specifically, the lower surface of the layer portion SL1 # 1) and the film C1. It includes a surface portion (specifically, the lower surface of the layer portion SL2 # 1) facing the work W through the through hole formed in the film C1.
  • the layer portion SL1 # 1 is mainly composed of the above-mentioned modeling portion M1.
  • the layer portion SL2 # 1 is mainly composed of the above-mentioned modeling portion M2. Therefore, the size of the layer portion SL2 # 1 is smaller than the size of the layer portion SL1 # 1.
  • the size of the layered portion SL2 # 1 is smaller than the size R1 of the molten pool MP1 for forming the layered portion SL1 # 1.
  • the size of the layered portion SL1 # 1 is larger than the size R2 of the molten pool MP2 for forming the layered portion SL2 # 1.
  • the structural layer SL # 1 is connected to the work W. In at least a part of the portion where the film C1 has been removed, the structural layer SL # 1 is bound to the work W. On the other hand, in at least a part of the portion where the film C1 remains, the structural layer SL # 1 is separated from the work W (that is, not bonded). The structural layer SL # 1 is separated from the work W at least in a part where the film C1 is not removed. The structural layer SL # 1 is separated from the work W at least in a part different from the portion where the structural layer SL # 1 and the work W face each other. Conversely, the film C1 remains in at least a part of the portion where the structural layer SL # 1 is separated from the work W.
  • the structural layer SL # 1 is partially bonded to the work W. Specifically, the structural layer SL # 1 partially penetrates (that is, penetrates) the film C1 and is bonded to the work W. The structural layer SL # 1 and the work W are partially separated. The structural layer SL # 1 is not separated from the work W (that is, the layer portion SL1 # 1 separated from the work W by interposing (that is, remaining) the film C1 with the surface WS of the work W. Includes layer portion SL2 # 1 (combined with work W).
  • the lower surface of the structural layer SL # 1 includes a surface portion (specifically, the lower surface of the layer portion SL1 # 2) that is not bonded to the work W due to the presence of the film C1 between the surface WS of the work W. It includes a surface portion (specifically, the lower surface of the layer portion SL2 # 1) that is bonded to the work W through the through hole formed in the film C1 by melting the film C1.
  • the modeling system 1 sets the surface of the formed structural layer SL on the new modeling surface MS, and repeats the operation of forming the new structural layer SL on the new modeling surface MS. ..
  • a three-dimensional structure ST is formed. Since the formed three-dimensional structure ST contains the above-mentioned structural layer SL # 1, the unmelted film C1 partially remains between the three-dimensional structure ST and the surface WS of the work W. .. Specifically, the three-dimensional structure ST is connected to the work W at least in a part of the portion where the three-dimensional structure ST and the work W face each other.
  • the three-dimensional structure ST is bonded to the work W.
  • the three-dimensional structure ST is separated from the work W (that is, not bonded).
  • the three-dimensional structure ST is separated from the work W.
  • the three-dimensional structure ST is separated from the work W at least in a part different from the portion where the three-dimensional structure ST and the work W face each other.
  • the film C1 remains in at least a part of the portion where the three-dimensional structure ST is separated from the work W.
  • the three-dimensional structure ST is partially connected to the work W. Specifically, the three-dimensional structure ST partially penetrates (that is, penetrates) the film C1 and is bonded to the work W.
  • the three-dimensional structure ST and the work W are partially separated.
  • the structural portion separated from the work W by interposing (that is, remaining) the film C1 between the surface WS of the work W and not separated from the work W (that is, the work W). Includes (combined) structural parts.
  • the lower surface of the three-dimensional structure ST has a surface portion that is not bonded to the work W due to the presence of the film C1 between the surface WS of the work W and a penetration formed in the film C1 by melting the film C1. Includes a surface portion coupled to the work W through the hole.
  • a process for separating the three-dimensional structure ST from the work W is performed.
  • the process of applying a force for separating the three-dimensional structure ST from the work W to at least one of the work W and the three-dimensional structure ST is a process for separating the three-dimensional structure ST from the work W. It is done as.
  • a process of applying a force for peeling the three-dimensional structure ST from the work W to the three-dimensional structure ST may be performed.
  • a process of applying a force for peeling the three-dimensional structure ST from the work W to the work W may be performed.
  • the unmelted film C1 partially remains between the three-dimensional structure ST and the surface WS of the work W. Therefore, the area of the bonding surface between the three-dimensional structure ST and the work W is compared with the case where the film C1 does not remain between the three-dimensional structure ST and the surface WS of the work W (see FIG. 13). Becomes smaller. Therefore, the bonding force between the three-dimensional structure ST and the work W becomes weaker as the area of the bonding surface between the three-dimensional structure ST and the work W becomes smaller. Therefore, as the coupling force between the three-dimensional structure ST and the work W is weakened, the force required to separate the three-dimensional structure ST from the work W is reduced. As a result, the force required to separate the three-dimensional structure ST from the work W is reduced, so that the three-dimensional structure ST can be easily separated from the work W.
  • the three-dimensional structure ST when the three-dimensional structure ST is separated from the work W, the three-dimensional structure ST and the work W are bonded at or near the bonding surface between the three-dimensional structure ST and the work W.
  • the part breaks. Therefore, the force for separating the three-dimensional structure ST from the work W described above substantially corresponds to the force for breaking the portion where the three-dimensional structure ST and the work W are connected.
  • the bonding surface between the three-dimensional structure ST and the work W may be the same as the fracture surface that appears when the portion where the three-dimensional structure ST and the work W are bonded is broken.
  • the film C1 remains between the three-dimensional structure ST and the surface WS of the work W (see FIG.
  • the film is formed between the three-dimensional structure ST and the surface WS of the work W.
  • the portion where the three-dimensional structure ST and the work W are connected is reduced. Since the portion where the three-dimensional structure ST and the work W are connected is broken, the portion to be broken in order to separate the three-dimensional structure ST from the work W is reduced. Therefore, the force required to break the portion where the three-dimensional structure ST and the work W are connected is also small as the portion to be broken in order to separate the three-dimensional structure ST from the work W is reduced. Become. As a result, the force required to break the portion where the three-dimensional structure ST and the work W are connected is reduced, so that the three-dimensional structure ST can be easily separated from the work W.
  • the intermediate structure that is, the formed structural layer SL
  • the structural layer SL # is the structural layer SL #. It is partially connected to the work W via 1. Therefore, the state of the intermediate structure is substantially equivalent to the state held by the work W. Therefore, the occurrence of deformation (for example, at least one of warpage and strain) of the intermediate structure due to stress generated in the intermediate structure is appropriately suppressed.
  • the area of the bonding surface between the three-dimensional structure ST and the work W becomes smaller. As the area of the boundary surface between the film C1 remaining on the work W and the three-dimensional structure ST increases, the area of the bonding surface between the three-dimensional structure ST and the work W decreases.
  • the modeling system 1 has a three-dimensional structure ST (particularly, a structure) so that the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W is equal to or larger than the first predetermined area.
  • Layer SL # 1 may be formed.
  • the three-dimensional structure ST (particularly, the structural layer SL #) is provided so that the area of the interface between the film C1 remaining on the work W and the three-dimensional structure ST is equal to or larger than the second predetermined area. 1) may be formed.
  • the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W is larger than the area of the bonding surface between the three-dimensional structure ST and the work W.
  • a three-dimensional structure ST (particularly, structural layer SL # 1) may be formed. More specifically, in the modeling system 1, the interface between the film C1 remaining on the work W and the surface WS of the work W with respect to the formation region on which the three-dimensional structure ST should be formed on the work W.
  • the three-dimensional structure ST (particularly, the structural layer SL # 1) is provided so that the ratio occupied by the area is larger than the ratio occupied by the area of the bonding surface between the three-dimensional structure ST and the work W with respect to the formed region. It may be formed.
  • the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W is smaller than the area of the bonding surface between the three-dimensional structure ST and the work W. Separation of the three-dimensional structure ST from the work W becomes easier.
  • the area of the boundary surface between the film C1 remaining on the work W and the three-dimensional structure ST is larger than the area of the bonding surface between the three-dimensional structure ST and the work W.
  • 3D structure ST (particularly, structural layer SL # 1) may be formed. More specifically, in the modeling system 1, the interface between the film C1 remaining on the work W and the three-dimensional structure ST with respect to the formation region on which the three-dimensional structure ST should be formed is formed.
  • the three-dimensional structure ST (particularly, the structural layer SL # 1) is provided so that the ratio occupied by the area is larger than the ratio occupied by the area of the bonding surface between the three-dimensional structure ST and the work W with respect to the formed region. It may be formed.
  • the area of the interface between the film C1 remaining on the work W and the three-dimensional structure ST is smaller than the area of the bonding surface between the three-dimensional structure ST and the work W. Separation of the three-dimensional structure ST from the work W becomes easier.
  • the lowermost structural layer SL # 1 is integrated with the work W. Therefore, the portion where the three-dimensional structure ST and the work W are connected may be included in the structural layer SL # 1.
  • the portion to be broken in order to separate the three-dimensional structure ST from the work W may be included in the structural layer SL # 1.
  • the layer portion SL2 # 1 located inside the through hole formed in the film C1 is broken by melting the film C1 of the structural layer SL # 1, so that the work W is three-dimensional.
  • the structure ST may be separated.
  • the portion SL # 1-1 of the structural layer SL # 1 located on the work W side with respect to the fracture surface may remain in the work W while being bonded to the work W.
  • the portion SL # 1-2 of the structural layer SL # 1 located on the three-dimensional structure ST side of the fracture surface may be separated from the work W while being coupled to the three-dimensional structure ST.
  • At least a part of the film C1 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the three-dimensional structure ST. ..
  • at least a part of the film C1 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the work W.
  • the work W is separated from the work W when the three-dimensional structure ST is separated.
  • the membrane C1 is separated from.
  • the force required to separate the film C1 from the work W that is, necessary to separate the three-dimensional structure ST from the work W. Power
  • the wettability of the film C1 to the work W may be smaller than a predetermined amount.
  • the force required to separate the three-dimensional structure ST from the work W is increased. It does not become excessively large due to the presence of the film C1.
  • the wettability of the film C1 to the work W is lower than the wettability of the molding material M and the three-dimensional structure ST to the work W, it is necessary to separate the three-dimensional structure ST from the work W. Since it can be said that the force is substantially determined by the wettability of the modeling material M and the three-dimensional structure ST with respect to the work W, the force required to separate the three-dimensional structure ST from the work W is the force of the film C1.
  • the wettability of the film C1 to the work W may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. That is, the bonding force between the film C1 and the work W may be lower than the bonding force between the modeling material M and the three-dimensional structure ST and the work W. As a result, it is easier to separate the three-dimensional structure ST from the work W as compared with the case where the wettability of the film C1 to the work W is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W. become.
  • the three-dimensional structure ST is separated from the work W when the three-dimensional structure ST is separated.
  • the membrane C1 is separated from.
  • the force that is, the force required to separate the film C1 from the three-dimensional structure ST. That is, the force required to separate the three-dimensional structure ST from the work W
  • the force becomes small. This is because the lower the wettability of the film C with respect to the three-dimensional structure ST, the smaller the bonding force between the film C and the three-dimensional structure ST.
  • the wettability of the film C1 to the three-dimensional structure ST may be smaller than a predetermined amount.
  • the wettability of the film C1 to the three-dimensional structure ST is lower than the wettability of the molding material M and the three-dimensional structure ST to the work W, it is necessary to separate the three-dimensional structure ST from the work W. The force does not become excessively large due to the presence of the film C1.
  • the wettability of the film C1 to the three-dimensional structure ST is lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W, the three-dimensional structure ST is separated from the work W.
  • the force required for this is substantially determined by the wettability of the modeling material M and the 3D structure ST to the work W
  • the force required to separate the 3D structure ST from the work W is There is almost no change regardless of the presence of the film C1. Therefore, the wettability of the film C1 to the three-dimensional structure ST may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. That is, the bonding force between the film C1 and the three-dimensional structure ST may be lower than the bonding force between the modeling material M and the three-dimensional structure ST and the work W. As a result, the wettability of the film C1 to the three-dimensional structure ST is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W, and the separation of the three-dimensional structure ST from the work W Will be easier.
  • the film C2 is formed on the surface WS of the work W
  • the surface roughness of the film C2 may be larger than the surface roughness of the surface WS of the work W. That is, the surface of the film C2 (specifically, the surface of the work W opposite to the surface in contact with the surface WS and facing the + Z side) may be rougher than the surface WS of the work W. .. That is, a film C2 having a rougher surface than the surface WS of the work W is formed on the surface WS of the work W.
  • the surface of the film C2 is formed with minute or desired size irregularities. It is equivalent to the uneven surface. That is, the surface of the film C2 includes an uneven surface on which fine or desired size irregularities are formed. In other words, the surface of the film C2 is equivalent to a rough surface. That is, the surface of the film C2 includes a rough surface.
  • a film of a phosphate (for example, a manganese phosphate salt) formed on the surface WS of the work W by performing a lubelite treatment on the surface WS can be mentioned.
  • the surface roughness of the film C is larger than the surface roughness of the work W, the surface roughness of the film C is smaller than the surface roughness of the work W, and the work W and the three-dimensional structure ST are compared with each other. At least a part of the film C tends to remain between them.
  • the reason why at least a part of the film C remains between the work W and the three-dimensional structure ST will be described with reference to FIGS. 16 to 18.
  • the modeling system 1 performs the same operation as the modeling operation for the work W on which the film C1 is formed. Therefore, first, the modeling system 1 forms the lowest structural layer SL (that is, the structural layer SL # 1) on the work W. Specifically, the irradiation of light EL and the supply of the modeling material M to the modeling surface MS set on the surface WS of the work W are started. However, since the film C2 is formed on the surface WS of the work W, the light EL is actually irradiated to the film C2 and the modeling material M is supplied to the film C2. Therefore, the molten pool MP is formed on the film C2.
  • the film C2 since the surface roughness of the film C2 is relatively large (that is, larger than the surface roughness of the work W), the film C2 has a convex portion having a relatively large thickness and a thickness relatively large. Includes small recesses (that is, recesses that are recessed rather than convex). Therefore, the convex portion is less likely to be completely melted by irradiation with light EL as compared with the concave portion. That is, while a part of the film portion (typically at least a part of each of the concave portion and the convex portion) irradiated with the light EL of the film C2 is melted, the light EL of the film C2 is formed.
  • the other part of the irradiated membrane portion does not melt.
  • the concave portion of the membrane C2 melts and removes the membrane C2 to the extent that a through hole penetrating the membrane C2 is formed, while the convex portion of the membrane C2 penetrates the membrane C2.
  • the film C2 melts only to the extent that the through holes are not formed. That is, while the concave portion of the film C2 is melted to form a through hole, the convex portion of the film C2 is melted only to the extent that a part thereof remains on the work W.
  • the molten portion of the film C2 is compared with the size (specifically, the diameter) of the molten pool MP on the film C2. Size (specifically, diameter) becomes smaller.
  • FIG. 16A is similar to the case where the molding operation is performed on the work W on which the film C1 is formed. As shown in the above, the unmelted film C2 partially remains between the solidified modeling material M and the surface WS of the work W.
  • FIG. 16 is a cross-sectional view showing a modeling material M solidified so that the film C2 partially remains between the work W and the surface WS.
  • the surface WS of the structural layer SL # 1 and the work W is similar to the case where the modeling operation is performed on the work W on which the film C1 is formed.
  • the unmelted film C2 partially remains between and.
  • the modeling system 1 sets the surface of the formed structural layer SL on the new modeling surface MS, and repeats the operation of forming the new structural layer SL on the new modeling surface MS. ..
  • a three-dimensional structure ST is formed. Since the formed three-dimensional structure ST includes the structural layer SL # 1 described above, even when the modeling operation is performed on the work W on which the film C2 is formed, the modeling operation is performed on the work W on which the film C1 is formed. The unmelted film C2 partially remains between the three-dimensional structure ST and the surface WS of the work W, as in the case where
  • the three-dimensional structure ST is separated from the work W in the same manner as when the modeling operation is performed on the work W on which the film C1 is formed. Processing is performed.
  • the unmelted film C2 partially remains between the three-dimensional structure ST and the surface WS of the work W, there is a partial residue between the three-dimensional structure ST and the surface WS of the work W.
  • the separation of the three-dimensional structure ST from the work W becomes easier as compared with the case where the unmelted film C2 does not partially remain.
  • the reason is described above for the process for separating the three-dimensional structure ST from the work W in the situation where the film C1 partially remains between the three-dimensional structure ST and the surface WS of the work W. It has already been explained in the explanation. That is, as shown in FIG. 18 showing how the three-dimensional structure ST is separated from the work W, the three-dimensional structure ST may be separated from the work W by breaking the structural layer SL # 1. .. More specifically, the portion of the structural layer SL # 1 located inside the through hole formed in the film C2 is broken by melting the film C2, so that the three-dimensional structure ST is released from the work W. It may be separated. In this case, as shown in FIG.
  • the portion SL # 1-1 of the structural layer SL # 1 located on the work W side with respect to the fracture surface may remain in the work W while being bonded to the work W. Further, the portion SL # 1-1 of the structural layer SL # 1 located on the three-dimensional structure ST side of the fracture surface may be separated from the work W while being coupled to the three-dimensional structure ST.
  • the modeling system 1 has a three-dimensional structure ST (particularly, a structure) so that the area of the boundary surface between the film C2 remaining on the work W and the surface WS of the work W is equal to or larger than the first predetermined area.
  • Layer SL # 1) may be formed.
  • the three-dimensional structure ST (particularly, the structural layer SL #) is provided so that the area of the interface between the film C2 remaining on the work W and the three-dimensional structure ST is equal to or larger than the second predetermined area. 1) may be formed.
  • the area of the boundary surface between the film C2 remaining on the work W and the surface WS of the work W is larger than the area of the bonding surface between the three-dimensional structure ST and the work W.
  • a three-dimensional structure ST (particularly, structural layer SL # 1) may be formed.
  • the area of the interface between the film C2 remaining on the work W and the three-dimensional structure ST is larger than the area of the bonding surface between the three-dimensional structure ST and the work W.
  • a three-dimensional structure ST (particularly, structural layer SL # 1) may be formed.
  • At least a part of the film C2 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the three-dimensional structure ST. ..
  • At least a part of the film C2 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the work W.
  • the work W is separated from the work W when the three-dimensional structure ST is separated.
  • the membrane C2 is separated from. Therefore, even when the modeling operation is performed on the work W on which the film C2 is formed, the wettability of the film C2 to the work W is determined as in the case where the modeling operation is performed on the work W on which the film C1 is formed. It may be smaller than the fixed amount.
  • the wettability of the film C2 to the work W may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W.
  • the three-dimensional structure ST is separated from the work W when the three-dimensional structure ST is separated.
  • the membrane C2 is separated from. Therefore, even when the modeling operation is performed on the work W on which the film C2 is formed, the film C2 is wetted with respect to the three-dimensional structure ST as in the case where the modeling operation is performed on the work W on which the film C1 is formed.
  • the sex may be less than a predetermined amount.
  • the wettability of the film C2 to the three-dimensional structure ST may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. As a result, the wettability of the film C2 to the three-dimensional structure ST is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W, and the separation of the three-dimensional structure ST from the work W Will be easier.
  • a work W composed of a graphite material may be used.
  • a graphite material at least one of a carbon composite material reinforced with high-strength carbon fiber (so-called C / C composite (Carbon Fiber Reinforced Carbon Composite)) and an isotropic graphite material can be mentioned.
  • the modeling system 1 includes a head drive system 12 for moving the modeling head 11.
  • the modeling system 1 may include a stage drive system for moving the stage 13 in addition to or in place of the head drive system 12.
  • the stage drive system may move the stage 13 in at least one rotation direction of the X-axis direction, the Y-axis direction, the Z-axis direction, the ⁇ X direction, the ⁇ Y direction, and the ⁇ Z direction.
  • the movement of the stage 13 by the stage drive system changes the relative positional relationship between the stage 13 and the modeling head 11 in the same manner as the movement of the modeling head 11 by the head drive system 12, and by extension, the work W and the irradiation area.
  • the relative positional relationship with the EA is changed.
  • the modeling system 1 moves the irradiation region EA with respect to the modeling surface MS by moving the modeling head 11.
  • the modeling system 1 may move the irradiation region EA with respect to the modeling surface MS by deflecting the optical EL.
  • the irradiation system 111 may include, for example, an optical system capable of deflecting the optical EL (for example, a galvanometer mirror or the like).
  • the modeling system 1 melts the modeling material M by irradiating the modeling material M with light EL.
  • the modeling system 1 may melt the modeling material M by irradiating the modeling material M with an arbitrary energy beam.
  • the modeling system 1 may include a beam irradiation device capable of irradiating an arbitrary energy beam in addition to or in place of the irradiation system 111.
  • Any energy beam includes, but is not limited to, a charged particle beam such as an electron beam, an ion beam, or an electromagnetic wave.
  • the modeling system 1 can form the three-dimensional structure ST by the laser overlay welding method.
  • the modeling system 1 may form the three-dimensional structure ST from the modeling material M by another method capable of forming the three-dimensional structure ST.
  • a powder bed melt bonding method Power Bed Fusion
  • SLS powder sintering laminated molding method
  • the powder bed fusion bonding method is different from the laser overlay welding method in which the modeling material M is supplied to the irradiation region EA of the light EL while irradiating the light EL, and the modeling material M supplied in advance is irradiated with the light EL or the like.
  • the modeling system 1 forms the three-dimensional structure ST by supplying the modeling material M from the material nozzle 112 toward the irradiation region EA where the irradiation system 111 irradiates the processing light EL.
  • the modeling system 1 may form the three-dimensional structure ST by supplying the modeling material M from the material nozzle 112 without irradiating the processing light EL from the irradiation optical system 111.
  • the modeling material M is sprayed onto the modeling surface MS from the material nozzle 112 to melt the modeling material M on the modeling surface MS and solidify the melted modeling material M.
  • the dimensional structure ST may be formed.
  • the modeling system 1 melts the modeling material M on the modeling surface MS and solidifies the melted modeling material M by blowing a gas containing the modeling material M onto the modeling surface MS from the material nozzle 112 at an ultra-high speed.
  • the modeling system 1 melts the modeling material M on the modeling surface MS by spraying the heated modeling material M onto the modeling surface MS from the material nozzle 112, and solidifies the melted modeling material M.
  • the three-dimensional structure ST may be formed.
  • the modeling system 1 includes a control device 14.
  • the modeling system 1 does not have to include the control device 14.
  • the control device 14 may be provided outside the modeling system 1.
  • the control device 14 and the modeling system 1 may be connected by a wired or wireless communication line.
  • the modeling system 1 may be operated by using a recording medium in which a signal representing the operation procedure of the modeling system 1 is recorded in advance.
  • a part of the function of the control device 14 may be performed by another part (head drive system 12 as an example).
  • the thermal conductivity of carbon steel S50C is 35.3 [W / (m ⁇ K)] at 600 degrees Celsius.
  • the thermal conductivity of the chromium molybdenum steel SCM440 is 36.1 [W / (m ⁇ K)] at 600 degrees Celsius.
  • the thermal conductivity of the alloy tool steel SKD11 is 23.4 [W / (m ⁇ K)] at 500 degrees Celsius.
  • the thermal conductivity of the austenitic stainless steel SUS316 is 16.7 [W / (m ⁇ K)].
  • the thermal conductivity of the ferritic stainless steel SUS430 is 26.4 [W / (m ⁇ K)] at 100 degrees Celsius.
  • the thermal conductivity of martensitic stainless steel SUS440C is 24.3 [W / (m ⁇ K)] at 100 degrees Celsius.
  • the thermal conductivity of alumina 96 is 18 [W / (m ⁇ K)].
  • the thermal conductivity of alumina 99.5 is 33 [W / (m ⁇ K)].
  • the thermal conductivity of the C / C composite is 30-40 [W / (m ⁇ K)].
  • the thermal conductivity of isotropic graphite is 80 to 140 [W / (m ⁇ K)].
  • the thermal conductivity of titanium steel TP340 is 17.1 [W / (m ⁇ K)].
  • the thermal conductivity of titanium nitride is 19.2 [W / (m ⁇ K)]
  • the thermal conductivity of titanium carbide is 21 [W / (m ⁇ K)]
  • the thermal conductivity of titanium booxide is 64. [W / (m ⁇ K)].
  • the modeling material M a material whose linear thermal expansion coefficient is closer to the linear thermal expansion coefficient of the material constituting the work W than the linear thermal expansion coefficient of the material constituting the film C1 may be used.
  • the coefficient of linear thermal expansion of carbon steel S50C is 11.7 [1 / K]
  • the coefficient of linear thermal expansion of chromium molybdenum steel SCM440 is 12.3 ⁇ 10-6 [1 / K]
  • the coefficient of thermal expansion is 11.7 ⁇ 10-6 [1 / K]
  • the coefficient of linear thermal expansion of austenite-based stainless steel SUS316 is 15.9 ⁇ 10-6 [1 / K]
  • the coefficient of linear thermal expansion of ferrite-based stainless steel SUS430 is The coefficient of thermal expansion is 12.4 ⁇ 10-6 [1 / K]
  • the coefficient of linear thermal expansion of martensite-based stainless steel SUS440C is 11.7 ⁇ 10-6 [1 / K]
  • the coefficient of linear thermal expansion of alumina 96 is 8.3 ⁇ 10-6 [1 / K]
  • linear thermal expansion coefficient of alumina 99.5 is 6.3 ⁇ 10-6 [1 / K]
  • linear thermal expansion coefficient of C / C composite is 7-8 ⁇ 10-6 [1 / K]
  • the coefficient of linear thermal expansion of isotropic graphite is 4.5 to 5.9 ⁇ 10-6 [1 / K]
  • the coefficient of linear thermal expansion of titanium steel TP340 is 8.4 ⁇ 10-6 [1 /
  • the coefficient of thermal expansion of titanium nitride wire is 9.35 ⁇ 10-6 [1 / K]
  • the coefficient of thermal expansion of titanium carbide wire is 8.6 ⁇ 10-6 [1 / K]
  • the coefficient of thermal expansion of titanium booxide wire Is 7.8 ⁇ 10-6 [1 / K].
  • the present invention is not limited to the above-described embodiment, and can be appropriately modified within the scope of claims and within the scope not contrary to the gist or idea of the invention that can be read from the entire specification.
  • the modeling method is also included in the technical scope of the present invention.
  • Modeling system 11 Modeling head 111 Irradiation system 112 Material nozzle 13 Stage W work M Modeling material SL Structural layer ST 3D structure C film EL Light EA Irradiation area MA Supply area MP Melting pond MS Modeling surface

Abstract

This modeling method includes: irradiating an energy beam on a film that has been formed on the surface of a base material; and providing a material having a lower melting point than the melting point of the film at the energy beam irradiation position.

Description

造形方法、造形システム及び造形用土台Modeling method, modeling system and modeling base
　本発明は、例えば、造形物を形成する造形方法及び造形システム、並びに、造形システムに用いられる造形用土台の技術分野に関する。 The present invention relates to, for example, a modeling method and a modeling system for forming a modeled object, and a technical field of a modeling base used in the modeling system.
　特許文献１には、粉状の材料をエネルギビームで溶融した後に、溶融した材料を固化させることで基材に造形物を形成する造形システムが記載されている。このような造形システムでは、基材に造形物を形成した後に、造形物を基材から適切に分離する（一例として取り外す）ことが技術的課題となる。 Patent Document 1 describes a modeling system in which a powdered material is melted with an energy beam and then the melted material is solidified to form a modeled object on a base material. In such a modeling system, it is a technical problem to appropriately separate (remove as an example) the modeled object from the substrate after forming the modeled object on the substrate.
米国特許出願公開第２０１７／０１４９０９号明細書U.S. Patent Application Publication No. 2017/014909
　第１の態様によれば、基材の表面に形成された膜にエネルギビームを照射することと、前記エネルギビームの照射位置に前記膜の融点より融点が低い材料を供給することとを含む前記基材に造形物を形成する造形方法が提供される。 According to the first aspect, the film comprising irradiating the film formed on the surface of the base material with an energy beam and supplying a material having a melting point lower than the melting point of the film to the irradiation position of the energy beam. A modeling method for forming a modeled object on a substrate is provided.
　第２の態様によれば、基材の表面に形成された膜にエネルギビームを照射する照射装置と、前記エネルギビームの照射位置に前記膜の融点より融点が低い材料を供給する供給装置と、前記照射装置と前記供給装置とを制御して、前記膜に前記エネルギビームを照射し且つ前記エネルギビームの照射位置に前記材料を供給して、前記基材に造形物を形成する制御装置とを備える造形システムが提供される。 According to the second aspect, an irradiation device that irradiates a film formed on the surface of the base material with an energy beam, and a supply device that supplies a material having a melting point lower than the melting point of the film to the irradiation position of the energy beam. A control device that controls the irradiation device and the supply device to irradiate the film with the energy beam and supply the material to the irradiation position of the energy beam to form a modeled object on the base material. A built-in modeling system is provided.
　第３の態様によれば、材料を用いて造形物を形成する造形システムにおいて用いられる造形用土台であって、基材と、前記基材の表面に形成され、前記材料の融点より融点が高い膜とを備え、前記造形システムが有する、前記膜にエネルギビームを照射する照射装置と、前記エネルギビームの照射位置に前記材料を供給する供給装置とによって、前記造形物が形成される造形用土台が提供される。 According to the third aspect, it is a modeling base used in a modeling system for forming a modeled object using a material, which is formed on a base material and the surface of the base material and has a melting point higher than the melting point of the material. A modeling base on which the modeled object is formed by an irradiation device having a film and irradiating the film with an energy beam and a supply device for supplying the material to the irradiation position of the energy beam. Is provided.
　本発明の作用及び他の利得は次に説明する実施するための形態から明らかにされる。 The actions and other gains of the present invention will be clarified from the embodiments described below.
図１は、本実施形態の造形システムの構造を示す断面図である。FIG. 1 is a cross-sectional view showing the structure of the modeling system of the present embodiment. 図２（ａ）から図２（ｃ）のそれぞれは、それぞれワーク上のある領域において光を照射し且つ造形材料を供給した場合の様子を示す断面図である。Each of FIGS. 2 (a) to 2 (c) is a cross-sectional view showing a state in which light is irradiated and a modeling material is supplied in a certain region on the work. 図３（ａ）、図３（ｃ）及び図３（ｅ）のそれぞれは、３次元構造物を形成する過程を示す断面図であり、図３（ｂ）、図３（ｄ）及び図３（ｆ）のそれぞれは、３次元構造物を形成する過程を示す平面図である。3 (a), 3 (c) and 3 (e) are cross-sectional views showing the process of forming a three-dimensional structure, and are FIGS. 3 (b), 3 (d) and 3 (e). Each of (f) is a plan view which shows the process of forming a three-dimensional structure. 図４（ａ）から図４（ｃ）のそれぞれは、３次元構造物を形成する過程を示す断面図である。Each of FIGS. 4 (a) to 4 (c) is a cross-sectional view showing a process of forming a three-dimensional structure. 図５は、分離容易化処理が施されたワークを示す断面図である。FIG. 5 is a cross-sectional view showing a work that has been subjected to a separation facilitation process. 図６（ａ）は、膜が形成されたワークを示す断面図であり、図６（ｂ）は、膜が形成されたワークを示す平面図である。FIG. 6A is a cross-sectional view showing a work on which a film is formed, and FIG. 6B is a plan view showing a work on which a film is formed. 図７（ａ）は、造形面に対して照射される光及び造形面に対して供給される造形材料を示す断面図であり、図７（ｂ）は、造形面に対して照射される光及び造形面に対して供給される造形材料を示す断面図である。FIG. 7A is a cross-sectional view showing the light emitted to the modeling surface and the modeling material supplied to the modeling surface, and FIG. 7B is the light emitted to the modeling surface. It is sectional drawing which shows the modeling material supplied to the modeling surface. 図８（ａ）及び図８（ｃ）のそれぞれは、ワークの表面との間に膜が部分的に残留するように固化した造形材料を示す断面図であり、図８（ｂ）は、ワークの表面との間に膜が部分的に残留するように固化した造形材料を示す平面図である。8 (a) and 8 (c) are cross-sectional views showing a molding material solidified so that a film partially remains between the work and the surface of the work, and FIG. 8 (b) shows the work. It is a top view which shows the molding material solidified so that a film partially remains between it and the surface of. 図９は、造形面上で目標照射領域及び目標供給領域のそれぞれの移動軌跡を示す平面図である。FIG. 9 is a plan view showing the movement trajectories of the target irradiation region and the target supply region on the modeling surface. 図１０（ａ）及び図１０（ｃ）のそれぞれは、造形開始位置から目標照射領域及び目標供給領域のそれぞれをＹ軸方向に沿って移動させながら所望のタイミングで光を目標照射領域に照射し且つ造形材料を目標供給領域に供給する１回のスキャン動作が完了したときの固化した造形材料を示す断面図であり、図１０（ｂ）は、造形開始位置から目標照射領域及び目標供給領域のそれぞれをＹ軸方向に沿って移動させながら所望のタイミングで光を目標照射領域に照射し且つ造形材料を目標供給領域に供給する１回のスキャン動作が完了したときの固化した造形材料を示す断面図である。In each of FIGS. 10 (a) and 10 (c), the target irradiation region is irradiated with light at a desired timing while moving each of the target irradiation region and the target supply region from the modeling start position along the Y-axis direction. Further, it is a cross-sectional view showing a solidified modeling material when one scanning operation of supplying the modeling material to the target supply area is completed, and FIG. 10B is a cross-sectional view of the target irradiation area and the target supply area from the modeling start position. A cross section showing a solidified modeling material when one scanning operation of irradiating the target irradiation region with light at a desired timing and supplying the modeling material to the target supply region while moving each of them along the Y-axis direction is completed. It is a figure. 図１１（ａ）は、スキャン動作とステップ動作とが交互に繰り返されることで形成された最下層の構造層を示す平面図であり、図１１（ｂ）及び図１１（ｃ）のそれぞれは、スキャン動作とステップ動作とが交互に繰り返されることで形成された最下層の構造層を示す断面図である。FIG. 11A is a plan view showing a structural layer of the lowest layer formed by alternately repeating a scanning operation and a stepping operation, and each of FIGS. 11B and 11C It is sectional drawing which shows the structural layer of the lowermost layer formed by repeating a scanning operation and a step operation alternately. 図１２は、ワークの表面との間に膜が部分的に残留した状態で形成される３次元構造物を示す断面図である。FIG. 12 is a cross-sectional view showing a three-dimensional structure formed in a state where a film partially remains between the work and the surface of the work. 図１３は、ワークの表面との間に膜が残留していない状態で形成される３次元構造物を示す断面図である。FIG. 13 is a cross-sectional view showing a three-dimensional structure formed in a state where no film remains between the work and the surface of the work. 図１４は、ワークから３次元構造物が分離される様子を示す断面図である。FIG. 14 is a cross-sectional view showing how the three-dimensional structure is separated from the work. 図１５は、表面粗さがワークよりも大きい膜が形成されたワークを示す断面図である。FIG. 15 is a cross-sectional view showing a work on which a film having a surface roughness larger than that of the work is formed. 図１６は、ワークの表面との間に膜が部分的に残留するように固化した造形材料を示す断面図である。FIG. 16 is a cross-sectional view showing a molding material solidified so that a film partially remains between the work and the surface of the work. 図１７は、ワークの表面との間に膜が部分的に残留した状態で形成される３次元構造物を示す断面図である。FIG. 17 is a cross-sectional view showing a three-dimensional structure formed in a state where a film partially remains between the work and the surface of the work. 図１８は、ワークから３次元構造物が分離される様子を示す断面図である。FIG. 18 is a cross-sectional view showing how the three-dimensional structure is separated from the work.
　以下、図面を参照して造形方法、造形システム及び造形用土台の実施形態について説明する。以下では、レーザ肉盛溶接法（ＬＭＤ：Ｌａｓｅｒ　Ｍｅｔａｌ　Ｄｅｐｏｓｉｔｉｏｎ）により、造形材料Ｍを用いた付加加工を行うことで造形物を形成可能な造形システム１を用いて、造形方法、造形システム及び造形用土台の実施形態を説明する。尚、レーザ肉盛溶接法（ＬＭＤ）は、ダイレクト・メタル・デポジション、ディレクテッド・エナジー・デポジション、レーザクラッディング、レーザ・エンジニアード・ネット・シェイピング、ダイレクト・ライト・ファブリケーション、レーザ・コンソリデーション、シェイプ・デポジション・マニュファクチャリング、ワイヤ－フィード・レーザ・デポジション、ガス・スルー・ワイヤ、レーザ・パウダー・フージョン、レーザ・メタル・フォーミング、セレクティブ・レーザ・パウダー・リメルティング、レーザ・ダイレクト・キャスティング、レーザ・パウダー・デポジション、レーザ・アディティブ・マニュファクチャリング、レーザ・ラピッド・フォーミングと称してもよい。 Hereinafter, the modeling method, the modeling system, and the embodiment of the modeling base will be described with reference to the drawings. In the following, a modeling method, a modeling system, and a modeling system 1 are used, which can form a modeled object by performing additional processing using a modeling material M by a laser overlay welding method (LMD: Laser Metal Deposition). An embodiment of the foundation will be described. The laser overlay welding method (LMD) includes direct metal deposition, directed energy deposition, laser cladding, laser engineered net shaping, direct light fabrication, and laser consolidation. Foundation, Shape Deposition Manufacturing, Wire-Feed Laser Deposition, Gas Through Wire, Laser Powder Fusion, Laser Metal Forming, Selective Laser Powder Remelting, Laser Direct -It may also be called casting, laser powder deposition, laser additive manufacturing, or laser rapid forming.
　また、以下の説明では、互いに直交するＸ軸、Ｙ軸及びＺ軸から定義されるＸＹＺ直交座標系を用いて、造形システム１を構成する各種構成要素の位置関係について説明する。尚、以下の説明では、説明の便宜上、Ｘ軸方向及びＹ軸方向のそれぞれが水平方向（つまり、水平面内の所定方向）であり、Ｚ軸方向が鉛直方向（つまり、水平面に直交する方向であり、実質的には上下方向或いは重力方向）であるものとする。また、Ｘ軸、Ｙ軸及びＺ軸周りの回転方向（言い換えれば、傾斜方向）を、それぞれ、θＸ方向、θＹ方向及びθＺ方向と称する。ここで、Ｚ軸方向を重力方向としてもよい。また、ＸＹ平面を水平方向としてもよい。 Further, in the following description, the positional relationship of various components constituting the modeling system 1 will be described using the XYZ Cartesian coordinate system defined from the X-axis, the Y-axis, and the Z-axis which are orthogonal to each other. In the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in the horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). Yes, it is assumed that it is substantially in the vertical direction or the gravity direction). Further, the rotation directions (in other words, the inclination direction) around the X-axis, the Y-axis, and the Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively. Here, the Z-axis direction may be the direction of gravity. Further, the XY plane may be horizontal.
　（１）造形システム１の全体構造
　初めに、図１を参照して本実施形態の造形システム１の全体構造について説明する。図１は、本実施形態の造形システム１の構造の一例を示す断面図である。 (1) Overall Structure of Modeling System 1 First, the overall structure of the modeling system 1 of the present embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view showing an example of the structure of the modeling system 1 of the present embodiment.
　造形システム１は、３次元構造物（つまり、３次元方向のいずれの方向においても大きさを持つ３次元の物体であり、立体物、言い換えると、Ｘ、Ｙ及びＺ方向において大きさを持つ物体）ＳＴを形成可能である。造形システム１は、３次元構造物ＳＴを形成するための基礎（一例として基材、被加工材、台座及びワークピースの少なくとも一つ）となるワークＷ上に、３次元構造物ＳＴを形成可能である。造形システム１は、ワークＷに付加加工を行うことで、３次元構造物ＳＴを形成可能である。ワークＷが後述するステージ１３である場合には、造形システム１は、ステージ１３上に、３次元構造物ＳＴを形成可能である。ワークＷがステージ１３によって保持されている既存構造物（尚、既存構造物は、造形システム１が形成した別の３次元構造物ＳＴであってもよい）である場合には、造形システム１は、既存構造物上に、３次元構造物ＳＴを形成可能である。この場合、造形システム１は、既存構造物と一体化された３次元構造物ＳＴを形成してもよい。既存構造物と一体化された３次元構造物ＳＴを形成する動作は、既存構造物に新たな構造物を付加する動作と等価とみなせる。尚、既存構造物は例えば欠損箇所がある要修理品であってもよい。造形システム１は、要修理品の欠損箇所を埋めるように、要修理品に３次元構造物を形成してもよい。或いは、造形システム１は、既存構造物と分離可能な３次元構造物ＳＴを形成してもよい。尚、図１は、ワークＷが、ステージ１３によって保持されている既存構造物である例を示している。また、以下でも、ワークＷがステージ１３によって保持されている既存構造物である例を用いて説明を進める。 The modeling system 1 is a three-dimensional structure (that is, a three-dimensional object having a size in any of the three-dimensional directions, and a three-dimensional object, in other words, an object having a size in the X, Y, and Z directions. ) ST can be formed. The modeling system 1 can form the three-dimensional structure ST on the work W which is the basis for forming the three-dimensional structure ST (for example, at least one of the base material, the work material, the pedestal, and the workpiece). Is. The modeling system 1 can form a three-dimensional structure ST by performing additional processing on the work W. When the work W is the stage 13 described later, the modeling system 1 can form the three-dimensional structure ST on the stage 13. When the work W is an existing structure held by the stage 13 (note that the existing structure may be another three-dimensional structure ST formed by the modeling system 1), the modeling system 1 , The three-dimensional structure ST can be formed on the existing structure. In this case, the modeling system 1 may form a three-dimensional structure ST integrated with the existing structure. The operation of forming the three-dimensional structure ST integrated with the existing structure can be regarded as equivalent to the operation of adding a new structure to the existing structure. The existing structure may be, for example, a repair-required product having a defective portion. The modeling system 1 may form a three-dimensional structure in the repair-required product so as to fill the defective portion of the repair-required product. Alternatively, the modeling system 1 may form a three-dimensional structure ST that can be separated from the existing structure. Note that FIG. 1 shows an example in which the work W is an existing structure held by the stage 13. Further, in the following, the description will proceed with reference to an example in which the work W is an existing structure held by the stage 13.
　上述したように、造形システム１は、レーザ肉盛溶接法により造形物を形成可能である。つまり、造形システム１は、積層造形技術を用いて物体を形成する３Ｄプリンタであるとも言える。尚、積層造形技術は、ラピッドプロトタイピング（Ｒａｐｉｄ　Ｐｒｏｔｏｔｙｐｉｎｇ）、ラピッドマニュファクチャリング（Ｒａｐｉｄ　Ｍａｎｕｆａｃｔｕｒｉｎｇ）、又は、アディティブマニュファクチャリング（Ａｄｄｉｔｉｖｅ　Ｍａｎｕｆａｃｔｕｒｉｎｇ）とも称される。 As described above, the modeling system 1 can form a modeled object by the laser overlay welding method. That is, it can be said that the modeling system 1 is a 3D printer that forms an object by using the laminated modeling technique. The laminated modeling technique is also referred to as rapid prototyping, rapid manufacturing, or additive manufacturing.
　造形システム１は、造形材料Ｍを光ＥＬで加工して造形物を形成する。このような光ＬＥとして、例えば、赤外光、可視光及び紫外光のうちの少なくとも一つが使用可能であるが、その他の波長の光、例えば可視域の波長の光が用いられてもよい。光ＥＬは、レーザ光である。 The modeling system 1 processes the modeling material M with optical EL to form a modeled object. As such an optical LE, for example, at least one of infrared light, visible light, and ultraviolet light can be used, but light of other wavelengths, for example, light having a wavelength in the visible region may be used. The optical EL is a laser beam.
　造形材料Ｍは、所定強度以上の光ＥＬの照射によって溶融可能な材料である。このような造形材料Ｍとして、例えば、金属性の材料及び樹脂性の材料の少なくとも一方が使用可能である。但し、造形材料Ｍとして、金属性の材料及び樹脂性の材料とは異なるその他の材料が用いられてもよい。造形材料Ｍは、粉状の材料である。つまり、造形材料Ｍは、粉体である。粉体は、粉状の材料に加えて、粒状の材料を含んでいてもよい。造形材料Ｍは、例えば、９０マイクロメートル±４０マイクロメートルの範囲に収まる粒径の粉体を含んでいてもよい。造形材料Ｍを構成する粉体の平均粒径は、例えば、７５マイクロメートルであってもよいし、その他のサイズであってもよい。但し、造形材料Ｍは、粉体でなくてもよく、例えばワイヤ状の造形材料やガス状の造形材料が用いられてもよい。尚、造形システム１は、造形材料Ｍを荷電粒子線等のエネルギビームで加工して造形物を形成してもよい。 The modeling material M is a material that can be melted by irradiation with light EL having a predetermined intensity or higher. As such a modeling material M, for example, at least one of a metallic material and a resin material can be used. However, as the modeling material M, a material different from the metallic material and the resin material may be used. The modeling material M is a powdery material. That is, the modeling material M is a powder. The powder may contain a granular material in addition to the powdery material. The modeling material M may contain, for example, a powder having a particle size within the range of 90 micrometers ± 40 micrometers. The average particle size of the powders constituting the modeling material M may be, for example, 75 micrometers or other sizes. However, the modeling material M does not have to be powder, and for example, a wire-shaped modeling material or a gaseous modeling material may be used. In the modeling system 1, the modeling material M may be processed with an energy beam such as a charged particle beam to form a modeled object.
　造形材料Ｍを加工するために、造形システム１は、図１に示すように、造形ヘッド１１と、ヘッド駆動系１２と、ステージ１３と、制御装置１４とを備える。更に、造形ヘッド１１は、照射系１１１と、材料ノズル（つまり造形材料Ｍを供給する供給系のうち少なくとも一部）１１２とを備えている。尚、造形システム１は、造形ヘッド１１と、ヘッド駆動系１２と、ステージ１３とを図示無きチャンバ内に収容してもよい。ここで、チャンバ内は窒素やアルゴンガス等の不活性ガスでパージされていてもよい。 In order to process the modeling material M, the modeling system 1 includes a modeling head 11, a head drive system 12, a stage 13, and a control device 14, as shown in FIG. Further, the modeling head 11 includes an irradiation system 111 and a material nozzle (that is, at least a part of the supply system for supplying the modeling material M) 112. The modeling system 1 may accommodate the modeling head 11, the head drive system 12, and the stage 13 in a chamber (not shown). Here, the inside of the chamber may be purged with an inert gas such as nitrogen or argon gas.
　照射系１１１は、射出部１１３から光ＥＬを射出するための光学系（例えば、集光光学系）である。具体的には、照射系１１１は、光ＥＬを発する不図示の光源と、光ファイバ等の不図示の光伝送部材を介して光学的に接続されている。照射系１１１は、光伝送部材を介して光源から伝搬してくる光ＥＬを射出する。照射系１１１は、照射系１１１から下方（つまり、－Ｚ側）に向けて光ＥＬを照射する。照射系１１１の下方には、ステージ１３が配置されている。ステージ１３にワークＷが搭載されている場合には、照射系１１１は、ワークＷに向けて光ＥＬを照射可能である。具体的には、照射系１１１は、光ＥＬが照射される（典型的には、集光される）領域としてワークＷ上に設定される所定形状の照射領域ＥＡに光ＥＬを照射する。更に、照射系１１１の状態は、制御装置１４の制御下で、照射領域ＥＡに光ＥＬを照射する状態と、照射領域ＥＡに光ＥＬを照射しない状態との間で切替可能である。尚、照射系１１１から射出される光ＥＬの方向は真下（つまり、Ｚ軸と一致する方向）には限定されず、例えば、Ｚ軸に対して所定の角度だけ傾いた方向であってもよい。照射領域ＥＡは、例えば円形形状の領域であってもよいし、その他の形状（例えば、矩形形状）であってもよい。 The irradiation system 111 is an optical system (for example, a condensing optical system) for emitting optical EL from the injection unit 113. Specifically, the irradiation system 111 is optically connected to a light source (not shown) that emits an optical EL via an optical transmission member (not shown) such as an optical fiber. The irradiation system 111 emits optical EL propagating from the light source via the optical transmission member. The irradiation system 111 irradiates the light EL downward (that is, the −Z side) from the irradiation system 111. A stage 13 is arranged below the irradiation system 111. When the work W is mounted on the stage 13, the irradiation system 111 can irradiate the work W with light EL. Specifically, the irradiation system 111 irradiates the irradiation area EA having a predetermined shape set on the work W as the area where the light EL is irradiated (typically, the light is focused). Further, the state of the irradiation system 111 can be switched between a state in which the irradiation region EA is irradiated with the light EL and a state in which the irradiation region EA is not irradiated with the light EL under the control of the control device 14. The direction of the light EL emitted from the irradiation system 111 is not limited to the direction directly below (that is, the direction corresponding to the Z axis), and may be, for example, a direction tilted by a predetermined angle with respect to the Z axis. .. The irradiation region EA may be, for example, a circular region or another shape (for example, a rectangular shape).
　材料ノズル１１２は、造形材料Ｍを供給する供給アウトレット（つまり、供給口）１１４を有する。材料ノズル１１２は、供給アウトレット１１４から造形材料Ｍを供給（例えば、噴射、噴出又は射出）する。材料ノズル１１２は、造形材料Ｍの供給源である不図示の材料供給装置と物理的に接続されている。このとき、不図示のパイプ等の粉体伝送部材が材料供給装置と材料ノズルの間に介在してもよい。材料ノズル１１２は、粉体伝送部材を介して材料供給装置から供給される造形材料Ｍを供給する。尚、図１においては、材料ノズル１１２がチューブ形状に描かれている。しかしながら、材料ノズル１１２の形状はこのチューブ形状に限定されない。材料ノズル１１２は、下方（つまり、－Ｚ側）に向けて造形材料Ｍを供給する。材料ノズル１１２の下方には、ステージ１３が配置されている。ステージ１３にワークＷが搭載されている場合には、材料ノズル１１２は、ワークＷに向けて造形材料Ｍを供給する。尚、材料ノズル１１２から供給される造形材料Ｍの進行方向はＺ軸に対して所定の角度（一例として鋭角）だけ傾いた方向であるが、真下（つまり、Ｚ軸と一致する方向）であってもよい。尚、複数の材料ノズル１１２を設けてもよい。 The material nozzle 112 has a supply outlet (that is, a supply port) 114 for supplying the modeling material M. The material nozzle 112 supplies the molding material M from the supply outlet 114 (eg, injection, ejection or injection). The material nozzle 112 is physically connected to a material supply device (not shown) that is a supply source of the modeling material M. At this time, a powder transmission member such as a pipe (not shown) may be interposed between the material supply device and the material nozzle. The material nozzle 112 supplies the modeling material M supplied from the material supply device via the powder transmission member. In FIG. 1, the material nozzle 112 is drawn in a tube shape. However, the shape of the material nozzle 112 is not limited to this tube shape. The material nozzle 112 supplies the modeling material M downward (that is, the −Z side). A stage 13 is arranged below the material nozzle 112. When the work W is mounted on the stage 13, the material nozzle 112 supplies the modeling material M toward the work W. The traveling direction of the modeling material M supplied from the material nozzle 112 is a direction inclined by a predetermined angle (an acute angle as an example) with respect to the Z axis, but is directly below (that is, a direction corresponding to the Z axis). You may. In addition, a plurality of material nozzles 112 may be provided.
　本実施形態では、材料ノズル１１２は、照射系１１１が光ＥＬを照射する照射領域ＥＡに向けて造形材料Ｍを供給するように、照射系１１１に対して位置合わせされている。つまり、材料ノズル１１２が造形材料Ｍを供給する領域としてワークＷ上に設定される供給領域ＭＡと照射領域ＥＡとが一致する（或いは、少なくとも部分的に重複する）ように、材料ノズル１１２と照射系１１１とが位置合わせされている。尚、照射系１１１から射出された光ＥＬによってワークＷに形成される溶融池ＭＰに、材料ノズル１１２が造形材料Ｍを供給するように位置合わせされていてもよい。また、材料ノズル１１２が造形材料Ｍを供給する供給領域ＭＡと、溶融池ＭＰの領域とが部分的に重畳するように位置合わせされてもよい。 In the present embodiment, the material nozzle 112 is aligned with respect to the irradiation system 111 so that the irradiation system 111 supplies the modeling material M toward the irradiation region EA that irradiates the light EL. That is, the material nozzle 112 and the irradiation area are irradiated so that the supply area MA and the irradiation area EA set on the work W as the area where the material nozzle 112 supplies the modeling material M coincide with (or at least partially overlap) with each other. The system 111 is aligned with the system 111. The material nozzle 112 may be aligned so as to supply the modeling material M to the molten pool MP formed in the work W by the light EL emitted from the irradiation system 111. Further, the supply region MA to which the material nozzle 112 supplies the modeling material M and the region of the molten pool MP may be aligned so as to partially overlap each other.
　ヘッド駆動系１２は、造形ヘッド１１を移動させる。ヘッド駆動系１２は、造形ヘッド１１を、Ｘ軸、Ｙ軸及びＺ軸のそれぞれに沿って移動させる。ヘッド駆動系１２は、Ｘ軸、Ｙ軸及びＺ軸のそれぞれに加えて、θＸ方向、θＹ方向及びθＺ方向の少なくとも一つの回転方向に沿って造形ヘッド１１を移動させてもよい。言い換えると、ヘッド駆動系１２は、Ｘ軸、Ｙ軸及びＺ軸の少なくとも一つの軸回りに造形ヘッド１１を回転させてもよい。ヘッド駆動系１２は、Ｘ軸、Ｙ軸及びＺ軸の少なくとも一つの軸回りに造形ヘッド１１の姿勢を変えてもよい。ヘッド駆動系１２は、例えば、モータ等のアクチュエータを含む。ヘッド駆動系１２が造形ヘッド１１を移動させると、ワークＷ上において、照射領域ＥＡもまたワークＷに対して移動する。従って、ヘッド駆動系１２は、造形ヘッド１１を移動させることで、ワークＷと照射領域ＥＡとの位置関係（言い換えれば、ワークＷを保持するステージ１３と照射領域ＥＡとの位置関係）を変更可能である。また、ヘッド駆動系１２は、造形ヘッド１１を移動させることで、ワークＷと供給領域ＭＡとの位置関係（言い換えれば、ワークＷを保持するステージ１３と供給領域ＭＡとの位置関係）を変更可能である。 The head drive system 12 moves the modeling head 11. The head drive system 12 moves the modeling head 11 along the X-axis, the Y-axis, and the Z-axis, respectively. The head drive system 12 may move the modeling head 11 along at least one rotation direction in the θX direction, the θY direction, and the θZ direction in addition to the X-axis, the Y-axis, and the Z-axis, respectively. In other words, the head drive system 12 may rotate the modeling head 11 around at least one of the X-axis, Y-axis, and Z-axis. The head drive system 12 may change the posture of the modeling head 11 around at least one of the X-axis, the Y-axis, and the Z-axis. The head drive system 12 includes an actuator such as a motor, for example. When the head drive system 12 moves the modeling head 11, the irradiation region EA also moves on the work W with respect to the work W. Therefore, the head drive system 12 can change the positional relationship between the work W and the irradiation area EA (in other words, the positional relationship between the stage 13 holding the work W and the irradiation area EA) by moving the modeling head 11. Is. Further, the head drive system 12 can change the positional relationship between the work W and the supply area MA (in other words, the positional relationship between the stage 13 holding the work W and the supply area MA) by moving the modeling head 11. Is.
　尚、ヘッド駆動系１２は、照射系１１１と材料ノズル１１２とを別々に移動させてもよい。具体的には、例えば、ヘッド駆動系１２は、射出部１１３の位置、射出部１１３の向き（或いは姿勢）、供給アウトレット１１４の位置及び供給アウトレット１１４の向き（或いは姿勢）の少なくとも一つを調整可能であってもよい。この場合、照射系１１１が光ＥＬを照射する照射領域ＥＡと、材料ノズル１１２が造形材料Ｍを供給する供給領域ＭＡとを別々に制御可能にできる。 The head drive system 12 may move the irradiation system 111 and the material nozzle 112 separately. Specifically, for example, the head drive system 12 adjusts at least one of the position of the injection unit 113, the direction (or posture) of the injection unit 113, the position of the supply outlet 114, and the direction (or posture) of the supply outlet 114. It may be possible. In this case, the irradiation region EA in which the irradiation system 111 irradiates the light EL and the supply region MA in which the material nozzle 112 supplies the modeling material M can be controlled separately.
　ステージ１３は、ワークＷを保持可能である。但し、ステージ１３は、ワークＷを保持可能でなくてもよい。この場合、ワークＷは、ステージ１３に載置されていてもよい。このとき、ワークＷは、クランプレスでステージ１３に載置されていてもよい。或いはワークＷは、ステージ１３に支持されていてもよい。ステージ１３は、更に、ワークＷが保持されている場合には、保持したワークＷをリリース可能である。上述した照射系１１１は、ステージ１３がワークＷを保持している期間の少なくとも一部において光ＥＬを照射する。更に、上述した材料ノズル１１２は、ステージ１３がワークＷを保持（または載置、或いは支持）している期間の少なくとも一部において造形材料Ｍを供給する。尚、材料ノズル１１２が供給した造形材料Ｍの一部は、ワークＷの表面からワークＷの外部へと（例えば、ステージ１３の周囲へと）散乱する又はこぼれ落ちる可能性がある。このため、造形システム１は、ステージ１３の周囲に、散乱した又はこぼれ落ちた造形材料Ｍを回収する回収装置を備えていてもよい。 Stage 13 can hold the work W. However, the stage 13 does not have to be able to hold the work W. In this case, the work W may be placed on the stage 13. At this time, the work W may be mounted on the stage 13 without being clamped. Alternatively, the work W may be supported by the stage 13. Further, when the work W is held, the stage 13 can release the held work W. The irradiation system 111 described above irradiates the optical EL at least for a part of the period during which the stage 13 holds the work W. Further, the material nozzle 112 described above supplies the modeling material M for at least a part of the period during which the stage 13 holds (or places or supports) the work W. A part of the modeling material M supplied by the material nozzle 112 may be scattered or spilled from the surface of the work W to the outside of the work W (for example, around the stage 13). Therefore, the modeling system 1 may be provided with a recovery device for collecting the scattered or spilled modeling material M around the stage 13.
　制御装置１４は、造形システム１の動作を制御する。制御装置１４は、例えば、ＣＰＵ（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）及びＧＰＵ（Ｇｒａｐｈｉｃｓ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ）の少なくとも一方等の演算装置や、メモリ等の記憶装置を含んでいてもよい。制御装置１４は、ＣＰＵ等の演算装置がコンピュータプログラムを実行することで、造形システム１の動作を制御する装置として機能する。このコンピュータプログラムは、制御装置１４が行うべき後述する動作を制御装置１４（例えば、ＣＰＵ）に行わせる（つまり、実行させる）ためのコンピュータプログラムである。つまり、このコンピュータプログラムは、造形システム１に後述する動作を行わせるように制御装置１４を機能させるためのコンピュータプログラムである。演算装置が実行するコンピュータプログラムは、制御装置１４が備えるメモリ（つまり、記録媒体）に記録されていてもよいし、制御装置１４に内蔵された又は制御装置１４に外付け可能な任意の記憶媒体（例えば、ハードディスクや半導体メモリ）に記録されていてもよい。或いは、演算装置は、実行するべきコンピュータプログラムを、ネットワークインタフェースを介して、制御装置１４の外部の装置からダウンロードしてもよい。 The control device 14 controls the operation of the modeling system 1. The control device 14 may include, for example, an arithmetic unit such as at least one of a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit), and a storage device such as a memory. The control device 14 functions as a device that controls the operation of the modeling system 1 by executing a computer program by an arithmetic unit such as a CPU. This computer program is a computer program for causing the control device 14 (for example, the CPU) to perform (that is, execute) the operation described later to be performed by the control device 14. That is, this computer program is a computer program for causing the control device 14 to function so that the modeling system 1 performs an operation described later. The computer program executed by the arithmetic unit may be recorded in a memory (that is, a recording medium) included in the control device 14, or may be an arbitrary storage medium built in the control device 14 or externally attached to the control device 14. It may be recorded in (for example, a hard disk or a semiconductor memory). Alternatively, the arithmetic unit may download the computer program to be executed from an external device of the control device 14 via the network interface.
　特に、本実施形態では、制御装置１４は、照射系１１１による光ＥＬの射出態様を制御する。射出態様は、例えば、光ＥＬの強度及び光ＥＬの射出タイミングの少なくとも一方を含む。光ＥＬがパルス光である場合には、射出態様は、例えば、パルス光の発光時間の長さ、パルス光の発光周期との比（いわゆる、デューティ比）を含んでいてもよい。また、射出態様は、例えば、パルス光の発光時間の長さそのものや、発光周期そのものを含んでいてもよい。更に、制御装置１４は、ヘッド駆動系１２による造形ヘッド１１の移動態様を制御する。移動態様は、例えば、移動量、移動速度、移動方向及び移動タイミングの少なくとも一つを含む。更に、制御装置１４は、材料ノズル１１２による造形材料Ｍの供給態様を制御する。供給態様は、例えば、供給量（特に、単位時間当たりの供給量）を含む。 In particular, in the present embodiment, the control device 14 controls the emission mode of the optical EL by the irradiation system 111. The injection mode includes, for example, at least one of the intensity of the optical EL and the injection timing of the optical EL. When the light EL is pulsed light, the emission mode may include, for example, the length of the emission time of the pulsed light and the ratio to the emission period of the pulsed light (so-called duty ratio). Further, the injection mode may include, for example, the length of the emission time of the pulsed light itself or the emission cycle itself. Further, the control device 14 controls the movement mode of the modeling head 11 by the head drive system 12. The movement mode includes, for example, at least one of a movement amount, a movement speed, a movement direction, and a movement timing. Further, the control device 14 controls the supply mode of the modeling material M by the material nozzle 112. The supply mode includes, for example, a supply amount (particularly, a supply amount per unit time).
　制御装置１４は、造形システム１の内部に設けられていなくてもよく、例えば、造形システム１外にサーバ等として設けられていてもよい。この場合、制御装置１４と造形システム１とは、有線及び／又は無線のネットワーク（或いは、データバス及び／又は通信回線）で接続されていてもよい。有線のネットワークとして、例えばＩＥＥＥ１３９４、ＲＳ－２３２ｘ、ＲＳ－４２２、ＲＳ－４２３、ＲＳ－４８５及びＵＳＢの少なくとも一つに代表されるシリアルバス方式のインタフェースを用いるネットワークが用いられてもよい。有線のネットワークとして、パラレルバス方式のインタフェースを用いるネットワークが用いられてもよい。有線のネットワークとして、１０ＢＡＳＥ－Ｔ、１００ＢＡＳＥ－ＴＸ及び１０００ＢＡＳＥ－Ｔの少なくとも一つに代表されるイーサネット（登録商標）に準拠したインタフェースを用いるネットワークが用いられてもよい。無線のネットワークとして、電波を用いたネットワークが用いられてもよい。電波を用いたネットワークの一例として、ＩＥＥＥ８０２．１ｘに準拠したネットワーク（例えば、無線ＬＡＮ及びＢｌｕｅｔｏｏｔｈ（登録商標）の少なくとも一方）があげられる。無線のネットワークとして、赤外線を用いたネットワークが用いられてもよい。無線のネットワークとして、光通信を用いたネットワークが用いられてもよい。この場合、制御装置１４と造形システム１とはネットワークを介して各種の情報の送受信が可能となるように構成されていてもよい。また、制御装置１４は、ネットワークを介して造形システム１にコマンドや制御パラメータ等の情報を送信可能であってもよい。造形システム１は、制御装置１４からのコマンドや制御パラメータ等の情報を、上記ネットワークを介して受信する受信装置を備えていてもよい。 The control device 14 does not have to be provided inside the modeling system 1, and may be provided as a server or the like outside the modeling system 1, for example. In this case, the control device 14 and the modeling system 1 may be connected by a wired and / or wireless network (or a data bus and / or a communication line). As the wired network, for example, a network using a serial bus type interface represented by at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485 and USB may be used. As the wired network, a network using a parallel bus interface may be used. As a wired network, a network using an Ethernet (registered trademark) compliant interface represented by at least one of 10BASE-T, 100BASE-TX and 1000BASE-T may be used. As the wireless network, a network using radio waves may be used. An example of a network using radio waves is a network conforming to IEEE802.1x (for example, at least one of wireless LAN and Bluetooth®). As the wireless network, a network using infrared rays may be used. As the wireless network, a network using optical communication may be used. In this case, the control device 14 and the modeling system 1 may be configured so that various types of information can be transmitted and received via the network. Further, the control device 14 may be able to transmit information such as commands and control parameters to the modeling system 1 via the network. The modeling system 1 may include a receiving device that receives information such as commands and control parameters from the control device 14 via the network.
　尚、制御装置１４は、一部が造形システム１の内部に設けられ、他の一部が造形システム１の外部に設けられていてもよい。 A part of the control device 14 may be provided inside the modeling system 1, and a part of the control device 14 may be provided outside the modeling system 1.
　尚、演算装置が実行するコンピュータプログラムを記録する記録媒体としては、ＣＤ－ＲＯＭ、ＣＤ－Ｒ、ＣＤ－ＲＷやフレキシブルディスク、ＭＯ、ＤＶＤ－ＲＯＭ、ＤＶＤ－ＲＡＭ、ＤＶＤ－Ｒ、ＤＶＤ＋Ｒ、ＤＶＤ－ＲＷ、ＤＶＤ＋ＲＷ及びＢｌｕ－ｒａｙ（登録商標）等の光ディスク、磁気テープ等の磁気媒体、光磁気ディスク、ＵＳＢメモリ等の半導体メモリ、及び、その他プログラムを格納可能な任意の媒体の少なくとも一つが用いられてもよい。記録媒体には、コンピュータプログラムを記録可能な機器（例えば、コンピュータプログラムがソフトウェア及びファームウェア等の少なくとも一方の形態で実行可能な状態に実装された汎用機器又は専用機器）が含まれていてもよい。更に、コンピュータプログラムに含まれる各処理や機能は、制御装置１４（つまり、コンピュータ）がコンピュータプログラムを実行することで制御装置１４内に実現される論理的な処理ブロックによって実現されてもよいし、制御装置１４が備える所定のゲートアレイ（ＦＰＧＡ、ＡＳＩＣ）等のハードウェアによって実現されてもよいし、論理的な処理ブロックとハードウェアの一部の要素を実現する部分的ハードウェアモジュールとが混在する形式で実現してもよい。 The recording medium for recording the computer program executed by the arithmetic unit includes CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD + R, and DVD-. At least one of optical disks such as RW, DVD + RW and Blu-ray (registered trademark), magnetic media such as magnetic tape, magneto-optical disks, semiconductor memory such as USB memory, and any other medium capable of storing a program is used. You may. The recording medium may include a device capable of recording a computer program (for example, a general-purpose device or a dedicated device in which the computer program is implemented in at least one form such as software and firmware). Further, each process or function included in the computer program may be realized by a logical processing block realized in the control device 14 by the control device 14 (that is, a computer) executing the computer program. It may be realized by hardware such as a predetermined gate array (FPGA, ASIC) included in the control device 14, or a logical processing block and a partial hardware module that realizes a part of the hardware are mixed. It may be realized in the form of.
　（２）造形システム１の動作
　続いて、造形システム１の動作について説明する。本実施形態では、造形システム１は、上述したように、３次元構造物ＳＴを形成するための造形動作を行う。上述したように、造形システム１は、レーザ肉盛溶接法により３次元構造物ＳＴを形成する。このため、造形システム１は、レーザ肉盛溶接法に準拠した既存の造形動作を行うことで、３次元構造物ＳＴを形成してもよい。以下、レーザ肉盛溶接法による３次元構造物ＳＴの造形動作の一例について簡単に説明する。 (2) Operation of the modeling system 1 Next, the operation of the modeling system 1 will be described. In the present embodiment, as described above, the modeling system 1 performs a modeling operation for forming the three-dimensional structure ST. As described above, the modeling system 1 forms the three-dimensional structure ST by the laser overlay welding method. Therefore, the modeling system 1 may form the three-dimensional structure ST by performing an existing modeling operation based on the laser overlay welding method. Hereinafter, an example of the modeling operation of the three-dimensional structure ST by the laser overlay welding method will be briefly described.
　造形システム１は、形成するべき３次元構造物ＳＴの３次元モデルデータ（例えば、ＣＡＤ（Ｃｏｍｐｕｔｅｒ　Ａｉｄｅｄ　Ｄｅｓｉｇｎ）データ）等に基づいて、ワークＷ上に３次元構造物ＳＴを形成する。３次元モデルデータは、３次元構造物ＳＴの形状（特に、３次元形状）を表すデータを含む。３次元モデルデータとして、造形システム１内に設けられた計測装置で計測された立体物の計測データが用いられてもよい。３次元モデルデータとして、造形システム１とは別に設けられた３次元形状計測機の計測データが用いられてもよい。このような３次元形状計測機の一例として、ワークＷに対して移動可能であって且つワークＷに接触可能なプローブを有する接触型の３次元測定機及び非接触型の３次元計測機の少なくとも一方があげられる。非接触型の３次元計測機の一例として、パターン投影方式の３次元計測機、光切断方式の３次元計測機、タイム・オブ・フライト方式の３次元計測機、モアレトポグラフィ方式の３次元計測機、ホログラフィック干渉方式の３次元計測機、ＣＴ（Ｃｏｍｐｕｔｅｄ Ｔｏｍｏｇｒａｐｈｙ）方式の３次元計測機、及び、ＭＲＩ（Ｍａｇｎｅｔｉｃ　Ｒｅｓｏｎａｎｃｅ　Ｉｍａｇｉｎｇ）方式の３次元計測機の少なくとも一つがあげられる。３次元モデルデータとして、３次元構造物ＳＴの設計データが用いられてもよい。 The modeling system 1 forms the three-dimensional structure ST on the work W based on the three-dimensional model data (for example, CAD (Computer Aided Design) data) of the three-dimensional structure ST to be formed. The three-dimensional model data includes data representing the shape (particularly, the three-dimensional shape) of the three-dimensional structure ST. As the three-dimensional model data, the measurement data of the three-dimensional object measured by the measuring device provided in the modeling system 1 may be used. As the three-dimensional model data, the measurement data of the three-dimensional shape measuring machine provided separately from the modeling system 1 may be used. As an example of such a three-dimensional shape measuring machine, at least a contact type three-dimensional measuring machine and a non-contact type three-dimensional measuring machine having a probe that can move with respect to the work W and can contact the work W. One can be mentioned. As an example of a non-contact type 3D measuring machine, a pattern projection type 3D measuring machine, an optical cutting type 3D measuring machine, a time of flight type 3D measuring machine, and a moiretopography type 3D measuring machine , At least one of a holographic interference type three-dimensional measuring machine, a CT (Computed Tomography) type three-dimensional measuring machine, and an MRI (Magnetic Resonance Imaging) type three-dimensional measuring machine. As the 3D model data, the design data of the 3D structure ST may be used.
　造形システム１は、３次元構造物ＳＴを形成するために、例えば、Ｚ軸方向に沿って並ぶ複数の層状の部分構造物（以下、“構造層”と称する）ＳＬを順に形成していく。例えば、造形システム１は、３次元構造物ＳＴをＺ軸方向に沿って輪切りにすることで得られる複数の構造層ＳＬを１層ずつ順に形成していく。その結果、複数の構造層ＳＬが積層された積層構造体である３次元構造物ＳＴが形成される。以下、複数の構造層ＳＬを１層ずつ順に形成していくことで３次元構造物ＳＴを形成する動作の流れについて説明する。 In order to form the three-dimensional structure ST, the modeling system 1 sequentially forms, for example, a plurality of layered partial structures (hereinafter referred to as "structural layers") SLs arranged along the Z-axis direction. For example, the modeling system 1 sequentially forms a plurality of structural layers SL obtained by cutting the three-dimensional structure ST into round slices along the Z-axis direction. As a result, the three-dimensional structure ST, which is a laminated structure in which a plurality of structural layers SL are laminated, is formed. Hereinafter, the flow of the operation of forming the three-dimensional structure ST by forming the plurality of structural layers SL one by one in order will be described.
　まず、各構造層ＳＬを形成する動作について図２（ａ）から図２（ｃ）を参照して説明する。造形システム１は、制御装置１４の制御下で、ワークＷの表面又は形成済みの構造層ＳＬの表面に相当する造形面ＭＳ上の所望領域に照射領域ＥＡを設定し、当該照射領域ＥＡに対して照射系１１１から光ＥＬを照射する。尚、照射系１１１から照射される光ＥＬが造形面ＭＳ上に占める領域を照射領域ＥＡと称してもよい。また、造形システム１は、造形面ＭＳ上の所望領域に照射領域ＥＡを設定しなくてもよい。このときには、照射系１１１から照射される光ＥＬが造形面ＭＳ上に占める領域を照射領域ＥＡと称してもよい。本実施形態においては、光ＥＬのフォーカス位置ＦＰ（つまり、集光位置、言い換えると、Ｚ軸方向或いは光ＥＬの進行方向において、光ＥＬが最も収斂している位置）が造形面ＭＳに一致している。尚、光ＥＬのフォーカス位置ＦＰは、造形面ＭＳからＺ軸方向にずれた位置に設定されてもよい。その結果、図２（ａ）に示すように、照射系１１１から射出された光ＥＬによって造形面ＭＳ上の所望領域に溶融池（つまり、光ＥＬによって溶融した、液状の金属又は樹脂等のプール）ＭＰが形成される。更に、造形システム１は、制御装置１４の制御下で、造形面ＭＳ上の所望領域に供給領域ＭＡを設定し、当該供給領域ＭＡに対して材料ノズル１１２から造形材料Ｍを供給する。尚、造形システム１は、造形面ＭＳ上の所望領域に供給領域ＭＡを設定しなくてもよい。このときには、材料ノズル１１２から造形材料Ｍが供給される領域を供給領域ＭＡと称してもよい。ここで、上述したように照射領域ＥＡと供給領域ＭＡとが一致しているため、供給領域ＭＡは、溶融池ＭＰが形成された領域に設定されている。言い換えると、供給領域ＭＡは、溶融池ＭＰが形成された領域と一致する。このため、造形システム１は、図２（ｂ）に示すように、溶融池ＭＰに対して、材料ノズル１１２から造形材料Ｍを供給することになる。その結果、溶融池ＭＰに供給された造形材料Ｍが溶融する。造形ヘッド１１の移動に伴って溶融池ＭＰに光ＥＬが照射されなくなると、溶融池ＭＰにおいて溶融した造形材料Ｍは、冷却されて固化（つまり、凝固）する。その結果、図２（ｃ）に示すように、固化した造形材料Ｍが造形面ＭＳ上に堆積される。言い換えると、固化した造形材料Ｍの堆積物による造形物が形成される。このように造形面ＭＳに造形材料Ｍの堆積物を付加する付加加工が行われることで、造形物が形成される。 First, the operation of forming each structural layer SL will be described with reference to FIGS. 2 (a) and 2 (c). Under the control of the control device 14, the modeling system 1 sets an irradiation region EA in a desired region on the modeling surface MS corresponding to the surface of the work W or the surface of the formed structural layer SL, and the irradiation region EA is set with respect to the irradiation region EA. The light EL is irradiated from the irradiation system 111. The region occupied by the light EL emitted from the irradiation system 111 on the modeling surface MS may be referred to as an irradiation region EA. Further, the modeling system 1 does not have to set the irradiation region EA in the desired region on the modeling surface MS. At this time, the region occupied by the light EL irradiated from the irradiation system 111 on the modeling surface MS may be referred to as the irradiation region EA. In the present embodiment, the focus position FP of the optical EL (that is, the condensing position, in other words, the position where the optical EL is most convergent in the Z-axis direction or the traveling direction of the optical EL) coincides with the modeling surface MS. ing. The focus position FP of the optical EL may be set to a position deviated from the modeling surface MS in the Z-axis direction. As a result, as shown in FIG. 2A, a pool of liquid metal or resin melted by the optical EL in a desired region on the modeling surface MS by the optical EL emitted from the irradiation system 111. ) MP is formed. Further, the modeling system 1 sets a supply region MA in a desired region on the modeling surface MS under the control of the control device 14, and supplies the modeling material M to the supply region MA from the material nozzle 112. The modeling system 1 does not have to set the supply region MA in the desired region on the modeling surface MS. At this time, the region to which the modeling material M is supplied from the material nozzle 112 may be referred to as a supply region MA. Here, since the irradiation region EA and the supply region MA coincide with each other as described above, the supply region MA is set to the region where the molten pool MP is formed. In other words, the supply region MA coincides with the region where the molten pool MP is formed. Therefore, as shown in FIG. 2B, the modeling system 1 supplies the modeling material M to the molten pool MP from the material nozzle 112. As a result, the modeling material M supplied to the molten pool MP melts. When the molten pool MP is no longer irradiated with light EL due to the movement of the modeling head 11, the modeling material M melted in the molten pool MP is cooled and solidified (that is, solidified). As a result, as shown in FIG. 2C, the solidified modeling material M is deposited on the modeling surface MS. In other words, a model is formed by the deposit of the solidified model material M. By performing the addition processing of adding the deposit of the modeling material M to the modeling surface MS in this way, the modeled object is formed.
　このような光の照射ＥＬによる溶融池ＭＰの形成、溶融池ＭＰへの造形材料Ｍの供給、供給された造形材料Ｍの溶融及び溶融した造形材料Ｍの固化を含む一連の造形処理が、造形面ＭＳに対する造形ヘッド１１のＸＹ平面内の位置を変えながら繰り返される。言い換えると、造形面ＭＳに対して造形ヘッド１１をＸＹ平面内に沿って相対的に移動させながら、溶融池ＭＰの形成、造形材料Ｍの供給、造形材料Ｍの溶融及び溶融した造形材料Ｍの固化を含む一連の造形処理が繰り返される。造形面ＭＳに対して造形ヘッド１１が移動すると、造形面ＭＳに対して照射領域ＥＡもまたに移動する。従って、一連の造形処理が、造形面ＭＳに対して照射領域ＥＡをＸＹ平面に沿って（つまり、二次元平面内において）相対的に移動させながら繰り返されるとも言える。この際、光ＥＬは、造形物を形成すべき領域に設定された照射領域ＥＡに対して選択的に照射される一方で、造形物を形成すべきでない領域に設定された照射領域ＥＡに対して選択的に照射されない。尚、造形物を形成すべきでない領域には照射領域ＥＡが設定されないとも言える。つまり、造形システム１は、造形面ＭＳ上で所定の移動軌跡に沿って照射領域ＥＡを移動させながら、造形物を形成すべき領域の分布の態様に応じたタイミングで光ＥＬを造形面ＭＳに照射する。言い換えると、造形システム１は、所定の移動軌跡に沿って光ＥＬが照射される予定の領域を造形面ＭＳ上で移動させながら、当該領域が造形物を形成すべき領域に位置した場合に光ＥＬを造形面ＭＳに照射する。その結果、造形面ＭＳ上に、凝固した造形材料Ｍによる造形物の集合体に相当する構造層ＳＬが形成される。尚、上述した説明では、造形面ＭＳに対して照射領域ＥＡを移動させたが、照射領域ＥＡに対して造形面ＭＳを移動させてもよい。尚、造形物を形成したい領域の分布の態様を分布パターンとも構造層ＳＬのパターンとも称してもよい。 A series of modeling processes including formation of the molten pool MP by such light irradiation EL, supply of the modeling material M to the molten pool MP, melting of the supplied modeling material M, and solidification of the molten modeling material M are performed. It is repeated while changing the position of the modeling head 11 in the XY plane with respect to the surface MS. In other words, while moving the modeling head 11 relative to the modeling surface MS along the XY plane, the formation of the molten pool MP, the supply of the modeling material M, the melting of the modeling material M, and the melting of the molten modeling material M A series of modeling processes including solidification are repeated. When the modeling head 11 moves with respect to the modeling surface MS, the irradiation region EA also moves with respect to the modeling surface MS. Therefore, it can be said that a series of modeling processes is repeated while moving the irradiation region EA relative to the modeling surface MS along the XY plane (that is, in the two-dimensional plane). At this time, the optical EL selectively irradiates the irradiation region EA set in the region where the modeled object should be formed, while the light EL is applied to the irradiation region EA set in the region where the modeled object should not be formed. Is not selectively irradiated. It can also be said that the irradiation region EA is not set in the region where the modeled object should not be formed. That is, the modeling system 1 moves the irradiation region EA along the predetermined movement locus on the modeling surface MS, and transfers the optical EL to the modeling surface MS at a timing according to the distribution mode of the region on which the modeled object should be formed. Irradiate. In other words, the modeling system 1 moves a region to be irradiated with the light EL along a predetermined movement locus on the modeling surface MS, and when the region is located in the region where the modeled object should be formed, the light is emitted. The EL is applied to the modeling surface MS. As a result, a structural layer SL corresponding to an aggregate of the modeled objects made of the solidified modeling material M is formed on the modeling surface MS. In the above description, the irradiation area EA is moved with respect to the modeling surface MS, but the modeling surface MS may be moved with respect to the irradiation area EA. The mode of distribution of the region where the modeled object is to be formed may be referred to as a distribution pattern or a pattern of the structural layer SL.
　造形システム１は、このような構造層ＳＬを形成するための動作を、制御装置１４の制御下で、３次元モデルデータに基づいて繰り返し行う。図３（ａ）から図３（ｆ）及び図４（ａ）から図４（ｃ）を参照して説明すると、具体的には、まず、制御装置１４は、３次元モデルデータを積層ピッチでスライス処理してスライスデータを作成する。尚、制御装置１４は、造形システム１の特性に応じて、スライスデータを少なくとも部分的に修正してもよい。造形システム１は、制御装置１４の制御下で、ワークＷの表面ＷＳに相当する造形面ＭＳ上に１層目の構造層ＳＬ＃１を形成するための動作を、構造層ＳＬ＃１に対応する３次元モデルデータ（つまり、構造層ＳＬ＃１に対応するスライスデータ）に基づいて行う。その結果、造形面ＭＳ上には、図３（ａ）及び図３（ｂ）並びに図４（ａ）に示すように、構造層ＳＬ＃１が形成される。その後、造形システム１は、構造層ＳＬ＃１の表面（典型的には、上面）を新たな造形面ＭＳに設定した上で、当該新たな造形面ＭＳ上に２層目の構造層ＳＬ＃２を形成する。構造層ＳＬ＃２を形成するために、制御装置１４は、まず、造形ヘッド１１がＺ軸に沿って移動するようにヘッド駆動系１２を制御する。具体的には、制御装置１４は、ヘッド駆動系１２を制御して、照射領域ＥＡ及び供給領域ＭＡが構造層ＳＬ＃１の表面（つまり、新たな造形面ＭＳ）に設定されるように、＋Ｚ側に向かって造形ヘッド１１を移動させる。これにより、光ＥＬのフォーカス位置ＦＰが新たな造形面ＭＳに一致する。その後、造形システム１は、制御装置１４の制御下で、構造層ＳＬ＃１を形成する動作と同様の動作で、構造層ＳＬ＃２に対応するスライスデータに基づいて、構造層ＳＬ＃１上に構造層ＳＬ＃２を形成する。その結果、図３（ｃ）及び図３（ｄ）並びに図４（ｂ）に示すように、構造層ＳＬ＃２が形成される。以降、同様の動作が、ワークＷ上に形成するべき３次元構造物を構成する全ての構造層ＳＬが形成されるまで繰り返される。その結果、図３（ｅ）及び図３（ｆ）並びに図４（ｃ）に示すように、Ｚ軸に沿って（つまり、溶融池ＭＰの底面から上面へと向かう方向に沿って）複数の構造層ＳＬが積層された積層構造物によって、３次元構造物ＳＴが形成される。 The modeling system 1 repeatedly performs the operation for forming such a structural layer SL under the control of the control device 14 based on the three-dimensional model data. Explaining with reference to FIGS. 3 (a) to 3 (f) and FIGS. 4 (a) to 4 (c), specifically, first, the control device 14 first inputs the three-dimensional model data at a stacking pitch. Slice processing is performed to create slice data. The control device 14 may modify the slice data at least partially according to the characteristics of the modeling system 1. The modeling system 1 corresponds to the operation for forming the first structural layer SL # 1 on the modeling surface MS corresponding to the surface WS of the work W under the control of the control device 14. This is performed based on the three-dimensional model data (that is, the slice data corresponding to the structural layer SL # 1). As a result, the structural layer SL # 1 is formed on the modeling surface MS as shown in FIGS. 3 (a), 3 (b) and 4 (a). After that, the modeling system 1 sets the surface (typically, the upper surface) of the structural layer SL # 1 on the new modeling surface MS, and then sets the second structural layer SL # on the new modeling surface MS. Form 2. In order to form the structural layer SL # 2, the control device 14 first controls the head drive system 12 so that the modeling head 11 moves along the Z axis. Specifically, the control device 14 controls the head drive system 12 so that the irradiation region EA and the supply region MA are set on the surface of the structural layer SL # 1 (that is, the new modeling surface MS). The modeling head 11 is moved toward the + Z side. As a result, the focus position FP of the optical EL matches the new modeling surface MS. After that, the modeling system 1 operates on the structural layer SL # 1 based on the slice data corresponding to the structural layer SL # 2 in the same operation as the operation of forming the structural layer SL # 1 under the control of the control device 14. The structural layer SL # 2 is formed on the surface. As a result, the structural layer SL # 2 is formed as shown in FIGS. 3 (c), 3 (d) and 4 (b). After that, the same operation is repeated until all the structural layers SL constituting the three-dimensional structure to be formed on the work W are formed. As a result, as shown in FIGS. 3 (e), 3 (f), and 4 (c), a plurality of ridges are formed along the Z axis (that is, along the direction from the bottom surface to the top surface of the molten pool MP). The three-dimensional structure ST is formed by the laminated structure in which the structural layer SL is laminated.
　（３）３次元造形物ＳＴのワークＷからの分離を容易にするための分離容易化処理が施されたワークＷ
　上述した造形動作では、ワークＷに形成される３次元構造物ＳＴは、ワークＷと結合される（つまり、一体化される）。具体的には、上述した造形動作では、３次元構造物ＳＴを構成する構造層ＳＬ＃１がワークＷと結合される。このため、上述した造形動作では、ワークＷと相対的に強固に結合した３次元構造物ＳＴが形成される。その結果、３次元構造物ＳＴのワークＷからの分離（言い換えれば、取り外し）が容易でない可能性がある。 (3) Work W that has been subjected to separation facilitation processing to facilitate separation of the three-dimensional model ST from work W.
In the modeling operation described above, the three-dimensional structure ST formed on the work W is combined (that is, integrated) with the work W. Specifically, in the above-mentioned modeling operation, the structural layer SL # 1 constituting the three-dimensional structure ST is coupled to the work W. Therefore, in the above-mentioned modeling operation, the three-dimensional structure ST that is relatively firmly bonded to the work W is formed. As a result, it may not be easy to separate (in other words, remove) the three-dimensional structure ST from the work W.
　そこで、本実施形態では、造形システム１は、ワークＷに形成される３次元構造物ＳＴのワークＷからの分離を容易にするための分離容易化処理が施されたワークＷに対して、造形動作を行ってもよい。つまり、本実施形態では、分離容易化処理が施されていない上述したワークＷそのものが、造形物を形成するための造形用土台として用いられてもよいし、分離容易化処理が施されたワークＷが、造形物を形成するための造形用土台として用いられてもよい。その結果、分離容易化処理が施されていないワークＷに３次元構造物ＳＴが形成される場合と比較して、３次元構造物ＳＴのワークＷからの分離が容易になる。 Therefore, in the present embodiment, the modeling system 1 models the work W that has been subjected to the separation facilitation process to facilitate the separation of the three-dimensional structure ST formed on the work W from the work W. The operation may be performed. That is, in the present embodiment, the above-mentioned work W itself that has not been subjected to the separation facilitation treatment may be used as a modeling base for forming a modeled object, or the work that has been subjected to the separation facilitation treatment. W may be used as a modeling base for forming a modeled object. As a result, the separation of the three-dimensional structure ST from the work W becomes easier as compared with the case where the three-dimensional structure ST is formed on the work W that has not been subjected to the separation facilitation treatment.
　分離容易化処理は、分離容易化処理が施されない場合と比較して、ワークＷに形成される３次元構造物ＳＴとワークＷとの間の結合力（言い換えれば、付着力又は接合力）を弱くするための処理を含んでいてもよい。この場合、３次元構造物ＳＴとワークＷとの間の結合力が弱くなる分だけ、３次元構造物ＳＴのワークＷからの分離が容易になる。例えば、３次元構造物ＳＴとワークＷとの結合（つまり、３次元構造物ＳＴとワークＷとの強固な接合）が３次元構造物ＳＴのワークＷからの分離を困難にする要因の一つであることを考慮すれば、３次元構造物ＳＴとワークＷとの結合面（つまり、接合面）の面積が小さくなるほど、３次元構造物ＳＴのワークＷからの分離が容易になる可能性が高くなる。３次元構造物ＳＴとワークＷとが結合している部分が少なくなるほど（つまり、小さくなるほど）、３次元構造物ＳＴのワークＷからの分離が容易になる可能性が高くなる。このため、分離容易化処理（特に、３次元構造物ＳＴとワークＷとの間の結合力を弱くするための処理）は、３次元構造物ＳＴとワークＷとの結合面の面積を小さくするための処理を含んでいてもよい。分離容易化処理は、３次元構造物ＳＴとワークＷとのが結合している部分を少なくするための処理を含んでいてもよい。 The separation facilitation treatment reduces the bonding force (in other words, adhesive force or bonding force) between the three-dimensional structure ST formed on the work W and the work W as compared with the case where the separation facilitation treatment is not performed. It may include a process for weakening. In this case, the three-dimensional structure ST can be easily separated from the work W by the weakening of the coupling force between the three-dimensional structure ST and the work W. For example, the connection between the 3D structure ST and the work W (that is, the strong bonding between the 3D structure ST and the work W) is one of the factors that make it difficult to separate the 3D structure ST from the work W. Considering that, the smaller the area of the joint surface (that is, the joint surface) between the three-dimensional structure ST and the work W, the easier it is that the three-dimensional structure ST can be separated from the work W. It gets higher. The smaller the portion where the three-dimensional structure ST and the work W are connected (that is, the smaller the portion), the higher the possibility that the three-dimensional structure ST can be easily separated from the work W. Therefore, the separation facilitation process (particularly, the process for weakening the bonding force between the three-dimensional structure ST and the work W) reduces the area of the bonding surface between the three-dimensional structure ST and the work W. May include processing for. The separation facilitation process may include a process for reducing the portion where the three-dimensional structure ST and the work W are connected.
　分離容易化処理の一例として、分離容易化処理が施されたワークＷを示す断面図である図５に示すように、ワークＷの表面ＷＳに膜Ｃを形成する処理があげられる。この場合、膜Ｃが表面ＷＳに形成されたワークＷが、造形用土台として用いられる。つまり、造形用土台は、基材としてのワークＷと、ワークＷの表面ＷＳに形成された膜Ｃとを備えていてもよい。尚、ワークＷの表面ＷＳに膜Ｃが形成されない場合には、基材としてのワークＷが、造形用土台として用いられてもよい。 As an example of the separation facilitation treatment, as shown in FIG. 5, which is a cross-sectional view showing the work W subjected to the separation facilitation treatment, there is a treatment of forming a film C on the surface WS of the work W. In this case, the work W in which the film C is formed on the surface WS is used as a modeling base. That is, the modeling base may include a work W as a base material and a film C formed on the surface WS of the work W. When the film C is not formed on the surface WS of the work W, the work W as a base material may be used as a base for modeling.
　表面ＷＳに膜Ｃが形成されたワークＷに３次元構造物ＳＴが形成される場合には、表面ＷＳに膜Ｃが形成されていないワークＷに３次元構造物ＳＴが形成される場合と比較して、ワークＷと３次元構造物ＳＴとの間に膜Ｃの少なくとも一部が残留する可能性が高くなる。その結果、ワークＷと３次元構造物ＳＴとの間に膜Ｃが残留している分だけ、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなる可能性がある。このため、ワークＷの表面ＷＳに膜Ｃを形成する処理は、分離容易化処理の一例となり得る。 When the three-dimensional structure ST is formed on the work W on which the film C is formed on the surface WS, it is compared with the case where the three-dimensional structure ST is formed on the work W on which the film C is not formed on the surface WS. Therefore, there is a high possibility that at least a part of the film C remains between the work W and the three-dimensional structure ST. As a result, the area of the bonding surface between the three-dimensional structure ST and the work W may be reduced by the amount of the film C remaining between the work W and the three-dimensional structure ST. Therefore, the process of forming the film C on the surface WS of the work W can be an example of the separation facilitation process.
　膜Ｃは、ワークＷの表面ＷＳに対して表面処理を行うことでワークＷの表面ＷＳに形成されてもよい。表面処理は、造形システム１とは異なる不図示の表面処理装置によって行われる。但し、造形システム１が表面処理装置を備えている場合には、表面処理は、造形システム１（特に、造形システム１が備える表面処理装置）によって行われてもよい。表面処理は、物体の表面に所望の膜を形成するための膜形成処理を含んでいてもよい。表面処理は、物理的な処理、化学的な処理、電気的な処理、磁気的な処理、熱的な処理及び光学的な処理の少なくとも一つを含んでいてもよい。このような表面処理の一例として、めっき処理、蒸着処理（例えば、物理蒸着処理（ＰＶＤ：Ｐｈｙｓｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｏｉｎ）及び化学蒸着処理（ＣＶＤ：Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）の少なくとも一方）、スパッタリング処理、溶射処理及びリューブライト処理の少なくとも一つがあげられる。 The film C may be formed on the surface WS of the work W by performing a surface treatment on the surface WS of the work W. The surface treatment is performed by a surface treatment device (not shown) different from the modeling system 1. However, when the modeling system 1 is provided with a surface treatment device, the surface treatment may be performed by the modeling system 1 (particularly, the surface treatment device included in the modeling system 1). The surface treatment may include a film forming treatment for forming a desired film on the surface of the object. The surface treatment may include at least one of physical treatment, chemical treatment, electrical treatment, magnetic treatment, thermal treatment and optical treatment. As an example of such surface treatment, plating treatment, vapor deposition treatment (for example, at least one of physical vapor deposition treatment (PVD) and chemical vapor deposition treatment (CVD)), sputtering treatment, spraying treatment and At least one of the bright treatments can be mentioned.
　膜Ｃの膜厚（具体的には、図５のＺ軸方向におけるサイズ）は任意である。例えば、膜Ｃの膜厚は、数マイクロメートルであってもよいし、十数マイクロメートルであってもよいし、数十マイクロメートルであってもよい。 The film thickness of the film C (specifically, the size in the Z-axis direction of FIG. 5) is arbitrary. For example, the film thickness of the film C may be several micrometers, a dozens of micrometers, or a few tens of micrometers.
　膜Ｃの表面（図５に示す例では、＋Ｚ側を向いた面）の少なくとも一部は、平面であってもよい。膜Ｃの表面の少なくとも一部は、ＸＹ平面に平行な平面（つまり、水平面）であってもよい。但し、膜Ｃの表面の少なくとも一部が曲面であってもよい。膜Ｃの表面の少なくとも一部が傾斜面であってもよい。膜Ｃの表面の少なくとも一部がＸ軸に対して傾斜した傾斜面であってもよい。膜Ｃの表面の少なくとも一部がＹ軸に対して傾斜した傾斜面であってもよい。膜Ｃの表面の少なくとも一部がＺ軸に対して傾斜した傾斜面であってもよい。膜Ｃの表面の少なくとも一部が凹凸面であってもよい。 At least a part of the surface of the film C (in the example shown in FIG. 5, the surface facing the + Z side) may be a flat surface. At least a part of the surface of the film C may be a plane parallel to the XY plane (that is, a horizontal plane). However, at least a part of the surface of the film C may be a curved surface. At least a part of the surface of the film C may be an inclined surface. At least a part of the surface of the film C may be an inclined surface inclined with respect to the X axis. At least a part of the surface of the film C may be an inclined surface inclined with respect to the Y axis. At least a part of the surface of the film C may be an inclined surface inclined with respect to the Z axis. At least a part of the surface of the film C may be an uneven surface.
　ワークＷの表面ＷＳに形成される膜Ｃの特性は、ワークＷの特性とは異なっていてもよい。例えば、膜Ｃは、ワークＷを構成する材料とは異なる特性を有する材料から構成されていてもよい。また、膜Ｃの特性は、造形材料Ｍの特性とは異なっていてもよい。例えば、膜Ｃは、造形材料Ｍとは異なる特性を有する材料から構成されていてもよい。また、３次元構造物ＳＴが造形材料Ｍから構成されているため、膜Ｃの特性は、３次元構造物ＳＴの特性とは異なっていてもよい。つまり、膜Ｃの特性は、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの特性とは異なっていてもよい。 The characteristics of the film C formed on the surface WS of the work W may be different from the characteristics of the work W. For example, the film C may be made of a material having properties different from those of the material constituting the work W. Further, the characteristics of the film C may be different from the characteristics of the modeling material M. For example, the film C may be made of a material having properties different from those of the modeling material M. Further, since the three-dimensional structure ST is composed of the modeling material M, the characteristics of the film C may be different from the characteristics of the three-dimensional structure ST. That is, the characteristics of the film C may be different from those of at least one of the work W, the modeling material M, and the three-dimensional structure ST.
　本実施形態では、特性は、融点及び表面粗さの少なくとも一方を含んでいてもよい。つまり、膜Ｃの特性は、膜Ｃの融点及び膜Ｃの表面粗さの少なくとも一方を含んでいてもよい。ワークＷの特性は、ワークＷの融点及びワークＷの表面粗さの少なくとも一方を含んでいてもよい。造形材料Ｍの特性は、造形材料Ｍの融点及び造形材料Ｍの表面粗さの少なくとも一方を含んでいてもよい。３次元構造物ＳＴの特性は、３次元構造物ＳＴの融点及び３次元構造物ＳＴの表面粗さの少なくとも一方を含んでいてもよい。 In this embodiment, the property may include at least one of melting point and surface roughness. That is, the characteristics of the film C may include at least one of the melting point of the film C and the surface roughness of the film C. The characteristics of the work W may include at least one of the melting point of the work W and the surface roughness of the work W. The characteristics of the modeling material M may include at least one of the melting point of the modeling material M and the surface roughness of the modeling material M. The characteristics of the three-dimensional structure ST may include at least one of the melting point of the three-dimensional structure ST and the surface roughness of the three-dimensional structure ST.
　膜Ｃの特性が膜Ｃの融点を含む場合には、膜Ｃの融点は、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの融点とは異なっていてもよい。膜Ｃの特性が膜Ｃの表面粗さを含む場合には、膜Ｃの表面粗さは、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの表面粗さとは異なっていてもよい。以下、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの融点とは異なる融点を有する膜Ｃが形成されたワークＷに対して行われる造形動作と、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの表面粗さとは異なる表面粗さを有する膜Ｃが形成されたワークＷに対して行われる造形動作とについて順に説明すると共に、３次元構造物ＳＴのワークＷからの分離が容易になる技術的理由について説明する。尚、以下では、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの融点とは異なる融点を有する膜Ｃを、“膜Ｃ１”と称する。また、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの表面粗さとは異なる表面粗さを有する膜Ｃを、“膜Ｃ２”と称する。 When the characteristics of the film C include the melting point of the film C, the melting point of the film C may be different from the melting point of at least one of the work W, the modeling material M, and the three-dimensional structure ST. When the characteristics of the film C include the surface roughness of the film C, the surface roughness of the film C may be different from the surface roughness of at least one of the work W, the modeling material M, and the three-dimensional structure ST. .. Hereinafter, the modeling operation performed on the work W on which the film C having a melting point different from at least one melting point of the work W, the modeling material M and the three-dimensional structure ST is formed, and the work W, the modeling material M and 3 The modeling operation performed on the work W on which the film C having the surface roughness different from the surface roughness of at least one of the three-dimensional structure ST is formed will be described in order, and from the work W of the three-dimensional structure ST. The technical reasons for facilitating separation will be described. In the following, a film C having a melting point different from at least one melting point of the work W, the modeling material M, and the three-dimensional structure ST will be referred to as “film C1”. Further, a film C having a surface roughness different from at least one surface roughness of the work W, the modeling material M, and the three-dimensional structure ST is referred to as “film C2”.
　（３－１）膜Ｃ１が形成されたワークＷに対して行われる造形動作
　膜Ｃ１がワークＷの表面ＷＳに形成される場合には、膜Ｃ１の融点は、ワークＷの融点よりも高くてもよい。つまり、ワークＷの表面ＷＳには、ワークＷの融点よりも高い融点を有する膜Ｃ１が形成されてもよい。また、膜Ｃ１の融点は、造形材料Ｍ及び３次元構造物ＳＴの融点よりも高くてもよい。以下の説明では、膜Ｃ１の融点が、ワークＷ、造形材料Ｍ及び３次元構造物ＳＴのそれぞれの融点よりも高い例を用いて説明を進める。 (3-1) Modeling operation performed on the work W on which the film C1 is formed When the film C1 is formed on the surface WS of the work W, the melting point of the film C1 is higher than the melting point of the work W. May be good. That is, a film C1 having a melting point higher than the melting point of the work W may be formed on the surface WS of the work W. Further, the melting point of the film C1 may be higher than the melting point of the modeling material M and the three-dimensional structure ST. In the following description, the description will proceed using an example in which the melting point of the film C1 is higher than the melting points of the work W, the modeling material M, and the three-dimensional structure ST.
　このような膜Ｃ１の一例として、例えば、クロムを含むめっき膜があげられる。この場合、クロムを含むめっき膜は、めっき処理によって形成されてもよい。クロムを含むめっき膜の融点は概ね摂氏１８８０度から摂氏１９００度である。このため、クロムを含むめっき膜が膜Ｃ１として用いられる場合には、融点が概ね摂氏１８８０度から摂氏１９００度よりも低いワークＷが用いられてもよい。融点が概ね摂氏１８８０度から摂氏１９００度よりも低いワークＷの一例として、融点が概ね摂氏１４００度から摂氏１５１０度となる鋼材から構成されるワーク、融点が概ね摂氏１３７１度から摂氏１５０８度となるステンレス鋼から構成されるワーク、及び、融点が概ね摂氏１６６８度となるチタン鋼（例えば、ＴＰ３４０）から構成されるワークの少なくとも一つが上げられる。鋼材の一例として、炭素鋼（いわゆるＳＣ材であり、例えば、Ｓ５０Ｃ等）、クロムモリブデン鋼（いわゆるＳＣＭ材であり、例えば、ＳＣＭ４４０等）、炭素工具鋼（いわゆるＳＫ材）、及び、合金工具鋼の少なくとも一つがあげられる。炭素鋼は、鉄に炭素が添加された合金である。クロムモリブデン鋼は、鉄にクロム及びモリブデンの少なくとも一方が添加された合金である。炭素工具鋼は、鉄に炭素、ケイ素及びマンガンの少なくとも一つが添加された合金である。合金工具鋼は、炭素工具鋼にタングステン、モリブデン、クロム、シリコン、バナジウム及びニッケルの少なくとも一つが添加された合金である。ステンレス鋼の一例として、融点が概ね摂氏１３７１度から摂氏１４００度となるオーステナイト系のステンレス鋼（例えば、ＳＵＳ３１６）、融点が概ね摂氏１４４０度から摂氏１５０８度となるフェライト系のステンレス鋼（例えば、ＳＵＳ４３０）、及び、マルテンサイト系のステンレス鋼（例えば、ＳＵＳ４４０Ｃ）の少なくとも一つがあげられる。また、造形材料Ｍとしても、融点が概ね摂氏１８８０度から摂氏１９００度よりも低い材料が用いられてもよい。融点が概ね摂氏１８８０度から摂氏１９００度よりも低い材料は、融点が概ね摂氏１８８０度から摂氏１９００度よりも低いワークＷを構成する材料と同一であってもよいため、その詳細な説明を省略する。 An example of such a film C1 is a plating film containing chromium. In this case, the plating film containing chromium may be formed by a plating process. The melting point of the chromium-containing plating film is approximately 1880 degrees Celsius to 1900 degrees Celsius. Therefore, when a plating film containing chromium is used as the film C1, a work W having a melting point of about 1880 degrees Celsius to lower than 1900 degrees Celsius may be used. As an example of a work W whose melting point is approximately 1880 degrees Celsius to lower than 1900 degrees Celsius, a work composed of steel having a melting point of approximately 1400 degrees Celsius to 1510 degrees Celsius has a melting point of approximately 1371 degrees Celsius to 1508 degrees Celsius. At least one of a workpiece made of stainless steel and a workpiece made of titanium steel (eg, TP340) having a melting point of approximately 1668 degrees Celsius can be mentioned. As an example of the steel material, carbon steel (so-called SC material, for example, S50C), chrome molybdenum steel (so-called SCM material, for example, SCM440, etc.), carbon tool steel (so-called SK material), and alloy tool steel. At least one of. Carbon steel is an alloy in which carbon is added to iron. Chromium molybdenum steel is an alloy in which at least one of chromium and molybdenum is added to iron. Carbon tool steel is an alloy in which at least one of carbon, silicon and manganese is added to iron. Alloy tool steel is an alloy in which at least one of tungsten, molybdenum, chromium, silicon, vanadium and nickel is added to carbon tool steel. As an example of stainless steel, an austenite-based stainless steel having a melting point of about 1371 degrees to 1400 degrees Celsius (for example, SUS316) and a ferrite-based stainless steel having a melting point of about 1440 degrees to 1508 degrees Celsius (for example, SUS430). ), And at least one of martensitic stainless steels (eg, SUS440C). Further, as the modeling material M, a material having a melting point of about 1880 degrees Celsius to lower than 1900 degrees Celsius may be used. A material having a melting point of approximately 1880 degrees Celsius to lower than 1900 degrees Celsius may be the same as a material constituting a work W having a melting point of approximately 1880 degrees Celsius to lower than 1900 degrees Celsius, and thus detailed description thereof will be omitted. To do.
　膜Ｃ１の一例として、クロムに加えて又は代えてニッケルを含むめっき膜があげられる。この場合、ニッケルを含むめっき膜は、例えば、めっき処理（例えば、電気めっき処理）によって形成されてもよい。ニッケルを含むめっき膜の融点は概ね摂氏１４５０度であるため、ニッケルを含むめっき膜が膜Ｃ１として用いられる場合には、融点が概ね摂氏１４５０度よりも低いワークＷが用いられてもよい。融点が概ね摂氏１４５０度よりも低いワークＷの一例として、上述した鋼材から構成されるワーク及び上述したステンレス鋼から構成されるワークの少なくとも一つが上げられる。また、造形材料Ｍとしても、融点が概ね摂氏１４５０度よりも低い材料が用いられてもよい。融点が概ね摂氏１４５０度よりも低い材料は、融点が概ね摂氏１４５０度よりも低いワークＷを構成する材料と同一であってもよいため、その詳細な説明を省略する。 An example of the film C1 is a plating film containing nickel in addition to or in place of chromium. In this case, the nickel-containing plating film may be formed by, for example, a plating process (for example, an electroplating process). Since the melting point of the nickel-containing plating film is approximately 1450 degrees Celsius, when the nickel-containing plating film is used as the film C1, a work W having a melting point lower than approximately 1450 degrees Celsius may be used. As an example of the work W having a melting point lower than 1450 degrees Celsius, at least one of the above-mentioned work made of steel and the above-mentioned work made of stainless steel can be mentioned. Further, as the modeling material M, a material having a melting point lower than 1450 degrees Celsius may be used. A material having a melting point lower than approximately 1450 degrees Celsius may be the same as a material constituting the work W having a melting point lower than approximately 1450 degrees Celsius, and thus detailed description thereof will be omitted.
　膜Ｃ１の一例として、窒化チタンを含む膜があげられる。この場合、窒化チタンを含む膜は、例えば、スパッタリング処理によって形成されてもよい。窒化チタンを含む膜の融点は概ね摂氏２９５０度であるため、窒化チタンを含む膜が膜Ｃ１として用いられる場合には、融点が概ね摂氏２９５０度よりも低いワークＷが用いられてもよい。融点が概ね摂氏２９５０度よりも低いワークＷの一例として、上述した鋼材から構成されるワーク及び上述したステンレス鋼から構成されるワークの少なくとも一つが上げられる。融点が概ね摂氏２９５０度よりも低いワークＷの他の一例として、融点が概ね摂氏２０５０度となるセラミックから構成されるワークがあげられる。セラミックの一例として、酸化アルミニウム（いわゆる、アルミナ）を含むセラミック（例えば、アルミナ９６及びアルミナ９９．５の少なくとも一方）があげられる。また、造形材料Ｍとしても、融点が概ね摂氏２９５０度よりも低い材料が用いられてもよい。融点が概ね摂氏２９５０度よりも低い材料は、融点が概ね摂氏２９５０度よりも低いワークＷを構成する材料と同一であってもよいため、その詳細な説明を省略する。 An example of the film C1 is a film containing titanium nitride. In this case, the film containing titanium nitride may be formed by, for example, a sputtering process. Since the melting point of the film containing titanium nitride is approximately 2950 degrees Celsius, when the film containing titanium nitride is used as the film C1, a work W having a melting point lower than approximately 2950 degrees Celsius may be used. As an example of the work W having a melting point lower than 2950 degrees Celsius, at least one of the above-mentioned work made of steel and the above-mentioned work made of stainless steel can be mentioned. Another example of a work W having a melting point of about 2950 degrees Celsius is a work made of ceramic having a melting point of about 2050 degrees Celsius. An example of a ceramic is a ceramic containing aluminum oxide (so-called alumina) (for example, at least one of alumina 96 and alumina 99.5). Further, as the modeling material M, a material having a melting point lower than 2950 degrees Celsius may be used. A material having a melting point lower than 2950 degrees Celsius may be the same as a material constituting the work W having a melting point lower than 2950 degrees Celsius, and thus detailed description thereof will be omitted.
　膜Ｃ１の一例として、ホウ化チタンを含む膜があげられる。この場合、膜Ｃ１は、例えば、スパッタリング処理及び蒸着処理の少なくとも一方によって形成されてもよい。ホウ化チタンを含む膜の融点は概ね摂氏３２３０度であるため、ホウ化チタンを含む膜が膜Ｃ１として用いられる場合には、概ね摂氏３２３０度よりも融点が低いワークＷが用いられてもよい。 An example of the film C1 is a film containing titanium borohydride. In this case, the film C1 may be formed by, for example, at least one of a sputtering treatment and a vapor deposition treatment. Since the melting point of the film containing titanium booxide is approximately 3230 degrees Celsius, when the film containing titanium booxide is used as the film C1, a work W having a melting point lower than approximately 3230 degrees Celsius may be used. ..
　膜Ｃ１の一例として、炭化チタンを含む膜があげられる。この場合、膜Ｃ１は、例えば、スパッタリング処理及び蒸着処理の少なくとも一方によって形成されてもよい。炭化チタンを含む膜の融点は概ね摂氏３１７０度であるため、炭化化チタンを含む膜が膜Ｃ１として用いられる場合には、概ね摂氏３１７０度よりも融点が低いワークＷが用いられてもよい。 An example of the film C1 is a film containing titanium carbide. In this case, the film C1 may be formed by, for example, at least one of a sputtering treatment and a vapor deposition treatment. Since the melting point of the film containing titanium carbide is approximately 3170 degrees Celsius, when the film containing titanium carbide is used as the film C1, a work W having a melting point lower than approximately 3170 degrees Celsius may be used.
　膜Ｃ１のその他の一例として、ＤＬＣ（Ｄｉａｍｏｎｄ　Ｌｉｋｅ　Ｃａｒｂｏｎ：ダイヤモンドライクカーボン）を含む膜、及び、セラミックを含む膜があげられる。この場合、ＤＬＣを含む膜は、例えば、スパッタリング処理及び蒸着処理の少なくとも一方によって形成されてもよい。セラミックを含む膜は、例えば、溶射処理によって形成されてもよい。 As another example of the film C1, a film containing DLC (Diamond Like Carbon: diamond-like carbon) and a film containing ceramic can be mentioned. In this case, the film containing the DLC may be formed by, for example, at least one of a sputtering treatment and a vapor deposition treatment. The film containing ceramic may be formed, for example, by thermal spraying.
　膜Ｃの融点がワークＷ、造形材料Ｍ及び３次元構造物ＳＴの少なくとも一つの融点よりも高い場合には、膜Ｃの融点がワークＷ、造形材料Ｍ及び３次元構造物ＳＴの融点よりも低い場合と比較して、光ＥＬの照射によって膜Ｃが溶融しにくくなる。その結果、ワークＷと３次元構造物ＳＴとの間に膜Ｃの少なくとも一部が残留しやすくなる。以下、ワークＷと３次元構造物ＳＴとの間に膜Ｃの少なくとも一部が残留する理由について、図６から図１４を参照しながら説明する。 When the melting point of the film C is higher than the melting point of at least one of the work W, the modeling material M and the three-dimensional structure ST, the melting point of the film C is higher than the melting point of the work W, the modeling material M and the three-dimensional structure ST. Compared with the case where it is low, the film C is less likely to be melted by irradiation with light EL. As a result, at least a part of the film C tends to remain between the work W and the three-dimensional structure ST. Hereinafter, the reason why at least a part of the film C remains between the work W and the three-dimensional structure ST will be described with reference to FIGS. 6 to 14.
　膜Ｃ１が形成されたワークＷに対して造形動作を開始する場合には、造形システム１は、まず、ワークＷ上に最下層の構造層ＳＬ（つまり、構造層ＳＬ＃１）を形成する。この場合、造形システム１は、ワークＷの表面ＷＳを造形面ＭＳに設定する。但し、ワークＷの表面ＷＳに膜Ｃ１が形成されているため、造形システム１は、膜Ｃ１の表面又は膜Ｃ１の表面とワークＷの表面ＷＳとの間に造形面ＭＳを設定してもよい。 When starting the modeling operation on the work W on which the film C1 is formed, the modeling system 1 first forms the lowest structural layer SL (that is, the structural layer SL # 1) on the work W. In this case, the modeling system 1 sets the surface WS of the work W to the modeling surface MS. However, since the film C1 is formed on the surface WS of the work W, the modeling system 1 may set the modeling surface MS between the surface of the film C1 or the surface of the film C1 and the surface WS of the work W. ..
　更に、造形システム１は、造形ヘッド１１が、造形面ＭＳのうちの造形開始領域ＭＳ＿ｓｔａｒｔに光ＥＬを照射し且つ造形材料Ｍを供給することができるように、造形ヘッド１１を造形開始位置に移動させる。その結果、図６（ａ）及び図６（ｂ）に示すように、照射系１１１が光ＥＬを照射可能な領域（つまり、照射系１１１が光ＥＬを照射することが予定されている領域）である目標照射領域ＥＡ＿ｔａｒｇｅｔは、造形開始領域ＭＳ＿ｓｔａｒｔに設定される。更に、図６（ａ）及び図６（ｂ）に示すように、材料ノズル１１２が造形材料Ｍを供給可能な領域（つまり、材料ノズル１１２が造形材料Ｍを供給することが予定されている領域）である目標供給領域ＭＡ＿ｔａｒｇｅｔは、造形開始領域ＭＳ＿ｓｔａｒｔに設定される。尚、図６（ａ）は、膜Ｃ１が形成されたワークＷを示す断面図であり、図６（ｂ）は、膜Ｃ１が形成されたワークＷを示す平面図である。 Further, the modeling system 1 moves the modeling head 11 to the modeling start position so that the modeling head 11 can irradiate the modeling start region MS_start of the modeling surface MS with light EL and supply the modeling material M. Let me. As a result, as shown in FIGS. 6A and 6B, the region where the irradiation system 111 can irradiate the light EL (that is, the region where the irradiation system 111 is scheduled to irradiate the light EL). The target irradiation region EA_start, which is, is set in the modeling start region MS_start. Further, as shown in FIGS. 6A and 6B, a region where the material nozzle 112 can supply the modeling material M (that is, a region where the material nozzle 112 is scheduled to supply the modeling material M). ), The target supply area MA_start is set in the modeling start area MS_start. 6 (a) is a cross-sectional view showing the work W on which the film C1 is formed, and FIG. 6 (b) is a plan view showing the work W on which the film C1 is formed.
　その後、図７（ａ）及び図７（ｂ）に示すように、造形面ＭＳに対する光ＥＬの照射及び造形材料Ｍの供給を開始する。尚、図７（ａ）は、造形面ＭＳに対して照射される光ＥＬ及び造形面に対して供給される造形材料Ｍを示す断面図であり、図７（ｂ）は、造形面ＭＳに対して照射される光ＥＬ及び造形面に対して供給される造形材料Ｍを示す断面図である。その結果、溶融池ＭＰが形成される。但し、ワークＷの表面ＷＳに膜Ｃ１が形成されているがゆえに、実際には、光ＥＬが膜Ｃ１に照射され且つ造形材料Ｍは膜Ｃ１に供給される。このため、図７（ａ）及び図７（ｂ）に示すように、溶融池ＭＰは、膜Ｃ１上に形成される。更に、膜Ｃ１の融点がワークＷの融点よりも高い（つまり、膜Ｃ１が溶融しにくい）がゆえに、膜Ｃ１は、膜Ｃ１が形成されていないワークＷに光ＥＬが直接照射された場合のワークＷほどには溶融しない。つまり、膜Ｃ１のうちの光ＥＬが照射された膜部分の一部が溶融する一方で、膜Ｃ１のうちの光ＥＬが照射された膜部分の他の一部が溶融しない。具体的には、膜Ｃ１のうちのワークＷ及び造形材料Ｍを溶融させるほどのエネルギ量を有する光ＥＬが照射された膜部分の一部が溶融する一方で、膜Ｃ１のうちのワークＷ及び造形材料Ｍを溶融させるほどのエネルギ量を有する光ＥＬが照射された膜部分の他の一部が溶融しない。典型的には、膜Ｃ１は、光ＥＬのスポットの中心付近の限られた領域において部分的に溶融する。このため、溶融池ＭＰのサイズ（具体的には、径）Ｒ１と比較して、膜Ｃ１の溶融部分のサイズ（具体的には、径）Ｒ２が小さくなる。 After that, as shown in FIGS. 7 (a) and 7 (b), irradiation of the modeling surface MS with optical EL and supply of the modeling material M are started. 7 (a) is a cross-sectional view showing an optical EL irradiated to the modeling surface MS and a modeling material M supplied to the modeling surface, and FIG. 7 (b) is a cross-sectional view showing the modeling surface MS. It is sectional drawing which shows the light EL to which it irradiates, and the modeling material M supplied to the modeling surface. As a result, a molten pool MP is formed. However, since the film C1 is formed on the surface WS of the work W, the light EL is actually irradiated to the film C1 and the modeling material M is supplied to the film C1. Therefore, as shown in FIGS. 7 (a) and 7 (b), the molten pool MP is formed on the film C1. Further, since the melting point of the film C1 is higher than the melting point of the work W (that is, the film C1 is difficult to melt), the film C1 is the case where the work W on which the film C1 is not formed is directly irradiated with light EL. It does not melt as much as work W. That is, while a part of the film C1 irradiated with the light EL is melted, the other part of the film C1 irradiated with the light EL is not melted. Specifically, the work W in the film C1 and the work W in the film C1 and a part of the film portion irradiated with the light EL having an energy amount sufficient to melt the modeling material M are melted. The other part of the film portion irradiated with the optical EL having an amount of energy sufficient to melt the modeling material M is not melted. Typically, the film C1 partially melts in a limited area near the center of the optical EL spot. Therefore, the size (specifically, the diameter) R2 of the molten portion of the membrane C1 is smaller than the size (specifically, the diameter) R1 of the molten pool MP.
　この場合、溶融池ＭＰとワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ１が部分的に残留することになる。具体的には、溶融池ＭＰは、膜Ｃ１上に露出した池部分ＭＰ１と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔内に形成される池部分ＭＰ２とを含む。池部分ＭＰ１とワークＷとの間には、溶融しなかった膜Ｃ１が部分的に残留する。従って、池部分ＭＰ１は、ワークＷの表面ＷＳに接触しない。一方で、池部分ＭＰ２は、貫通孔を介してワークＷの表面ＷＳに接触する。このため、溶融池ＭＰの底面は、膜Ｃ１に面する面部分（つまり、池部分ＭＰ１の底面）と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔を介してワークＷに面する面部分（つまり、池部分ＭＰ２の底面）とを含む。溶融池ＭＰのサイズＲ１と比較して、膜Ｃ１の溶融部分のサイズＲ２が小さくなるがゆえに、膜Ｃ１上に露出する池部分ＭＰ１のサイズＲ１と比較して、膜Ｃ１に形成された貫通孔内に形成される池部分ＭＰ２のサイズＲ２が小さくなる。 In this case, the unmelted film C1 partially remains between the molten pool MP and the surface WS of the work W. Specifically, the molten pool MP includes a pond portion MP1 exposed on the membrane C1 and a pond portion MP2 formed in a through hole formed in the membrane C1 by melting the membrane C1. The unmelted film C1 partially remains between the pond portion MP1 and the work W. Therefore, the pond portion MP1 does not come into contact with the surface WS of the work W. On the other hand, the pond portion MP2 contacts the surface WS of the work W through the through hole. Therefore, the bottom surface of the molten pool MP faces the work W through a surface portion facing the film C1 (that is, the bottom surface of the pond portion MP1) and a through hole formed in the film C1 by melting the film C1. The surface portion (that is, the bottom surface of the pond portion MP2) is included. Since the size R2 of the molten portion of the membrane C1 is smaller than the size R1 of the molten pool MP, the through hole formed in the membrane C1 is compared with the size R1 of the pond portion MP1 exposed on the membrane C1. The size R2 of the pond portion MP2 formed inside becomes smaller.
　溶融池ＭＰとワークＷの表面ＷＳとの間に溶融しなかった膜Ｃ１が部分的に残留する場合には、図８（ａ）から図８（ｃ）に示すように、溶融池ＭＰにおいて溶融した造形材料Ｍが冷却されて固化（つまり、凝固）した後には、固化した造形材料ＭとワークＷの表面ＷＳとの間に溶融しなかった膜Ｃ１が部分的に残留する。尚、図８（ａ）及び図８（ｃ）のそれぞれは、ワークＷの表面ＷＳとの間に膜Ｃ１が部分的に残留するように固化した造形材料Ｍを示す断面図であり、図８（ｂ）は、ワークＷの表面ＷＳとの間に膜Ｃ１が部分的に残留するように固化した造形材料Ｍを示す平面図である。固化した造形材料Ｍは、膜Ｃ１上に露出した造形部分Ｍ１と、膜Ｃ１が溶融して除去されることで膜Ｃ１に形成された貫通孔を介してワークＷ上に形成された造形部分Ｍ２とを含む。固化した造形材料Ｍの下面（つまり、－Ｚ側を向いた面）は、膜Ｃ１に面する面部分（つまり、造形部分Ｍ１の下面）と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔を介してワークＷに面する面部分（つまり、造形部分Ｍ２の下面）とを含む。尚、膜Ｃ１に形成された貫通孔内に形成される造形部分Ｍ２には、膜Ｃ１を構成する材料が含まれていてもよい。つまり、貫通孔からの膜Ｃ１の除去は、貫通孔からの膜Ｃ１の完全な除去のみならず、貫通孔に造形部分ＭＰ２が形成される程度に貫通孔からの膜Ｃ１が少なくとも部分的に除去されることも意味していてもよい。 When the unmelted film C1 partially remains between the molten pool MP and the surface WS of the work W, it melts in the molten pool MP as shown in FIGS. 8 (a) to 8 (c). After the formed molding material M is cooled and solidified (that is, solidified), an unmelted film C1 partially remains between the solidified molding material M and the surface WS of the work W. 8 (a) and 8 (c) are cross-sectional views showing a molding material M solidified so that the film C1 partially remains between the work W and the surface WS of the work W. (B) is a plan view showing a modeling material M solidified so that the film C1 partially remains between the work W and the surface WS. The solidified modeling material M has a modeling portion M1 exposed on the film C1 and a modeling portion M2 formed on the work W through a through hole formed in the film C1 by melting and removing the film C1. And include. The lower surface of the solidified modeling material M (that is, the surface facing the −Z side) is formed on the film C1 by melting the surface portion facing the film C1 (that is, the lower surface of the modeling portion M1) and the film C1. It includes a surface portion facing the work W (that is, the lower surface of the modeling portion M2) through the through hole. The modeling portion M2 formed in the through hole formed in the film C1 may contain a material constituting the film C1. That is, the removal of the film C1 from the through hole not only completely removes the film C1 from the through hole, but also at least partially removes the film C1 from the through hole to the extent that the modeling portion MP2 is formed in the through hole. It may also mean that it is done.
　造形部分Ｍ１は、主として、膜Ｃ１上に露出する池部分ＭＰ１が固化することで形成される造形物である。造形部分Ｍ２は、主として、膜Ｃ１に形成された貫通孔内に形成される池部分ＭＰ２が固化することで形成される造形物である。池部分ＭＰ１のサイズＲ１と比較して池部分ＭＰ２のサイズＲ２が小さくなるがゆえに、造形部分Ｍ１のサイズＤ１と比較して、造形部分Ｍ２のサイズＤ２は小さくなる。この場合、典型的には、造形部分Ｍ１のサイズＤ１は、造形部分Ｍ２を形成するための池部分ＭＰ２のサイズＲ２よりも大きくなる。尚、造形部分のサイズは、造形面ＭＳに沿った複数の方向のうちの少なくとも一つの方向におけるサイズ（図８（ａ）及び図８（ｃ）に示す例では、Ｘ軸方向及びＹ軸方向のそれぞれにおけるサイズ、以下同じ）を意味するものとする。以下、特段の表記がない場合には、固化した造形材料Ｍによって構成される造形物のサイズは、造形面ＭＳに沿った複数の方向のうちの少なくとも一つの方向におけるサイズを意味するものとする。 The modeled portion M1 is a modeled object formed mainly by solidifying the pond portion MP1 exposed on the film C1. The modeled portion M2 is a modeled object formed mainly by solidifying the pond portion MP2 formed in the through hole formed in the film C1. Since the size R2 of the pond portion MP2 is smaller than the size R1 of the pond portion MP1, the size D2 of the modeling portion M2 is smaller than the size D1 of the modeling portion M1. In this case, typically, the size D1 of the modeling portion M1 is larger than the size R2 of the pond portion MP2 for forming the modeling portion M2. The size of the modeling portion is the size in at least one of a plurality of directions along the modeling surface MS (in the examples shown in FIGS. 8A and 8C, the X-axis direction and the Y-axis direction). The size in each of the above, the same shall apply hereinafter). Hereinafter, unless otherwise specified, the size of the modeled object composed of the solidified modeling material M shall mean the size in at least one of a plurality of directions along the modeling surface MS. ..
　固化した造形材料ＭとワークＷとが面する部分では、造形材料Ｍは、典型的には、ワークＷと結合するように固化する。つまり、造形部分ＭＰ２は、ワークＷと結合するように固化する。造形部分ＭＰ２は、膜Ｃ１を貫通して（言い換えれば、突き抜けて）ワークＷと結合するように固化する。一方で、造形部分ＭＰ１とワークＷとの間には、溶融しなかった膜Ｃ１が残留している。つまり、造形部分ＭＰ１とワークＷとは離れている。但し、造形部分ＭＰ１が造形部分ＭＰ２と結合しているがゆえに、造形部分ＭＰ１は、造形部分ＭＰ２を介してワークＷに固定されている
　その後、上述したように、このような光の照射ＥＬによる溶融池ＭＰの形成、溶融池ＭＰへの造形材料Ｍの供給、供給された造形材料Ｍの溶融及び溶融した造形材料Ｍの固化を含む一連の造形処理が、造形面ＭＳに対する造形ヘッド１１のＸＹ平面内の位置を変えながら繰り返される。造形面ＭＳに対する造形ヘッド１１のＸＹ平面内の位置が変わると、図９に示すように、造形面ＭＳ上での目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれの位置が変わる。このため、一連の造形処理が、造形面ＭＳ上での目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれの位置を変えながら繰り返される。 At the portion where the solidified modeling material M and the work W face each other, the modeling material M is typically solidified so as to be bonded to the work W. That is, the modeling portion MP2 solidifies so as to be combined with the work W. The modeling portion MP2 penetrates the membrane C1 (in other words, penetrates) and solidifies so as to be bonded to the work W. On the other hand, the unmelted film C1 remains between the modeling portion MP1 and the work W. That is, the modeling portion MP1 and the work W are separated from each other. However, since the modeling portion MP1 is bonded to the modeling portion MP2, the modeling portion MP1 is fixed to the work W via the modeling portion MP2, and then, as described above, the light irradiation EL is used. A series of modeling processes including formation of the molten pool MP, supply of the modeling material M to the molten pool MP, melting of the supplied modeling material M, and solidification of the molten modeling material M are performed by XY of the modeling head 11 with respect to the modeling surface MS. It is repeated while changing the position in the plane. When the position of the modeling head 11 in the XY plane with respect to the modeling surface MS changes, the positions of the target irradiation area EA_taget and the target supply area MA_target on the modeling surface MS change, as shown in FIG. Therefore, a series of modeling processes is repeated while changing the positions of the target irradiation region EA_taget and the target supply region MA_taget on the modeling surface MS.
　本実施形態では、説明の便宜上、スキャン動作とステップ動作とを交互に繰り返すことで、造形面ＭＳに構造層ＳＬを形成するものとする。スキャン動作は、造形面ＭＳ上で目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれをＹ軸方向に沿って移動させながら所望のタイミングで光ＥＬを目標照射領域ＥＡ＿ｔａｒｇｅｔに照射し且つ造形材料Ｍを目標供給領域ＭＡ＿ｔａｒｇｅｔに供給する動作である。ステップ動作は、造形面ＭＳ上で目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれを少なくともＸ軸方向に沿って移動させる動作である。従って、造形面ＭＳ上で目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれの移動軌跡は、図９に示すように、Ｙ軸方向に沿った移動軌跡とＸ軸方向に沿った移動軌跡とを交互に含む。造形面ＭＳ上での目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれの移動軌跡は、駆動系１２による造形ヘッド１１のＸＹ平面内での移動軌跡と実質的に一致する。尚、上述した照射領域ＥＡは、目標照射領域ＥＡ＿ｔａｒｇｅｔを意味していてもよいし、実際に光ＥＬが照射される領域を意味していてもよい。また、上述した供給領域ＭＡは、目標供給領域ＭＡ＿ｔａｒｇｅｔを意味していてもよいし、実際に造形材料Ｍが供給される領域を意味していてもよい。 In the present embodiment, for convenience of explanation, the structural layer SL is formed on the modeling surface MS by alternately repeating the scanning operation and the step operation. In the scanning operation, the target irradiation area EA_taget and the target supply area MA_taget are each moved along the Y-axis direction on the modeling surface MS, and the light EL is irradiated to the target irradiation area EA_taget at a desired timing, and the modeling material M is targeted. This is an operation of supplying to the supply area MA_target. The step operation is an operation of moving each of the target irradiation region EA_target and the target supply region MA_target along at least the X-axis direction on the modeling surface MS. Therefore, as shown in FIG. 9, the movement loci of the target irradiation region EA_target and the target supply region MA_target alternate on the modeling surface MS with the movement locus along the Y-axis direction and the movement locus along the X-axis direction. Included in. The movement trajectories of the target irradiation region EA_target and the target supply region MA_target on the modeling surface MS substantially coincide with the movement loci of the modeling head 11 by the drive system 12 in the XY plane. The irradiation region EA described above may mean a target irradiation region EA_target, or may mean a region where the light EL is actually irradiated. Further, the above-mentioned supply region MA may mean a target supply region MA_taget, or may mean a region where the modeling material M is actually supplied.
　図１０（ａ）から図１０（ｃ）は、造形開始位置ＭＳ＿ｓｔａｒｔから目標照射領域ＥＡ＿ｔａｒｇｅｔ及び目標供給領域ＭＡ＿ｔａｒｇｅｔのそれぞれをＹ軸方向に沿って移動させながら所望のタイミングで光ＥＬを目標照射領域ＥＡ＿ｔａｒｇｅｔに照射し且つ造形材料Ｍを目標供給領域ＭＡ＿ｔａｒｇｅｔに供給する１回のスキャン動作が完了したときの固化した造形材料Ｍを示している。図１０（ａ）から図１０（ｃ）に示すように、１回のスキャン動作が完了した状態においても、固化した造形材料ＭとワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ１が部分的に残留する。このため、固化した造形材料Ｍのうち膜Ｃ１上に露出した部分（つまり、上述した造形部分Ｍ１から構成される部分）のサイズと比較して、固化した造形材料Ｍのうち膜Ｃ１に形成された貫通孔内に形成された部分（つまり、上述した造形部分Ｍ２から構成される部分）のサイズは小さくなる。具体的には、図１０（ａ）に示すように、固化した造形材料Ｍのうち膜Ｃ１上に露出した部分のＹ軸方向におけるサイズと比較して、固化した造形材料Ｍのうち膜Ｃ１に形成された貫通孔内に形成された部分のＹ軸方向におけるサイズは小さくなる。図１０（ｃ）に示すように、固化した造形材料Ｍのうち膜Ｃ１上に露出した部分のＸ軸方向におけるサイズと比較して、固化した造形材料Ｍのうち膜Ｃ１に形成された貫通孔内に形成された部分のＸ軸方向におけるサイズは小さくなる。更に、固化した造形材料Ｍは、固化した造形材料Ｍのうち膜Ｃ１に形成された貫通孔内に形成された部分を介してワークＷと結合するがゆえに、図１０（ａ）に示すように、固化した造形材料Ｍの表面のＹ軸方向におけるサイズと比較して、固化した造形材料ＭとワークＷの表面ＷＳとの結合面のＹ軸方向におけるサイズは小さくなる。図１０（ｃ）に示すように、固化した造形材料Ｍの表面のＸ軸方向におけるサイズと比較して、固化した造形材料ＭとワークＷの表面ＷＳとの接合面のＸ軸方向におけるサイズは小さくなる。 10 (a) to 10 (c) show the optical EL at a desired timing while moving each of the target irradiation area EA_taget and the target supply area MA_taget from the modeling start position MS_start along the Y-axis direction. Is shown, and the solidified modeling material M is shown when one scanning operation of irradiating the target supply area MA_taget with the modeling material M is completed. As shown in FIGS. 10 (a) to 10 (c), a film that did not melt between the solidified modeling material M and the surface WS of the work W even when one scanning operation was completed. C1 remains partially. Therefore, it is formed on the film C1 of the solidified modeling material M as compared with the size of the portion of the solidified modeling material M exposed on the film C1 (that is, the portion composed of the above-mentioned modeling portion M1). The size of the portion formed in the through hole (that is, the portion composed of the above-mentioned modeling portion M2) becomes smaller. Specifically, as shown in FIG. 10A, the film C1 of the solidified modeling material M is compared with the size of the portion of the solidified modeling material M exposed on the film C1 in the Y-axis direction. The size of the portion formed in the formed through hole in the Y-axis direction becomes smaller. As shown in FIG. 10 (c), the through hole formed in the film C1 of the solidified modeling material M is compared with the size of the portion of the solidified modeling material M exposed on the film C1 in the X-axis direction. The size of the portion formed inside in the X-axis direction becomes smaller. Further, as shown in FIG. 10 (a), the solidified modeling material M is bonded to the work W through the portion of the solidified modeling material M formed in the through hole formed in the film C1. The size of the joint surface between the solidified modeling material M and the surface WS of the work W in the Y-axis direction is smaller than the size of the surface of the solidified modeling material M in the Y-axis direction. As shown in FIG. 10 (c), the size of the joint surface between the solidified modeling material M and the surface WS of the work W in the X-axis direction is larger than the size of the surface of the solidified modeling material M in the X-axis direction. It becomes smaller.
　図１１（ａ）から図１１（ｃ）は、スキャン動作とステップ動作とが交互に繰り返されることで形成された最下層の構造層ＳＬ＃１を示している。図１１（ａ）から図１１（ｃ）に示すように、構造層ＳＬ＃１とワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ１が部分的に残留する。構造層ＳＬ＃１は、膜Ｃ１上に形成された層部分ＳＬ１＃１と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔を介してワークＷ上に形成された層部分ＳＬ２＃１とを含む。構造層ＳＬ＃１は、膜Ｃ１上に露出した層部分ＳＬ１＃１と、膜Ｃ１に形成された貫通孔内に形成された層部分ＳＬ２＃１とを含む。構造層ＳＬ＃１の一部である層部分ＳＬ１＃１は、残留した膜Ｃ１上に形成されている。構造層ＳＬ＃１の下面（つまり、－Ｚ側を向いた面）は、膜Ｃ１に面する面部分（具体的には、層部分ＳＬ１＃１の下面）と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔を介してワークＷに面する面部分（具体的には、層部分ＳＬ２＃１の下面）とを含む。 FIGS. 11 (a) to 11 (c) show the lowermost structural layer SL # 1 formed by alternately repeating the scanning operation and the step operation. As shown in FIGS. 11 (a) to 11 (c), the unmelted film C1 partially remains between the structural layer SL # 1 and the surface WS of the work W. The structural layer SL # 1 is a layer portion SL1 # 1 formed on the film C1 and a layer portion SL2 # formed on the work W via a through hole formed in the film C1 by melting the film C1. Includes 1 and. The structural layer SL # 1 includes a layer portion SL1 # 1 exposed on the film C1 and a layer portion SL2 # 1 formed in a through hole formed in the film C1. The layer portion SL1 # 1, which is a part of the structural layer SL # 1, is formed on the residual film C1. The lower surface of the structural layer SL # 1 (that is, the surface facing the −Z side) is formed by melting the surface portion facing the film C1 (specifically, the lower surface of the layer portion SL1 # 1) and the film C1. It includes a surface portion (specifically, the lower surface of the layer portion SL2 # 1) facing the work W through the through hole formed in the film C1.
　層部分ＳＬ１＃１は、主として上述した造形部分Ｍ１から構成される。層部分ＳＬ２＃１は、主として上述した造形部分Ｍ２から構成される。このため、層部分ＳＬ１＃１のサイズと比較して、層部分ＳＬ２＃１のサイズが小さくなる。層部分ＳＬ１＃１を形成するための溶融池ＭＰ１のサイズＲ１と比較して、層部分ＳＬ２＃１のサイズが小さくなる。層部分ＳＬ２＃１を形成するための溶融池ＭＰ２のサイズＲ２と比較して、層部分ＳＬ１＃１のサイズが大きくなる。 The layer portion SL1 # 1 is mainly composed of the above-mentioned modeling portion M1. The layer portion SL2 # 1 is mainly composed of the above-mentioned modeling portion M2. Therefore, the size of the layer portion SL2 # 1 is smaller than the size of the layer portion SL1 # 1. The size of the layered portion SL2 # 1 is smaller than the size R1 of the molten pool MP1 for forming the layered portion SL1 # 1. The size of the layered portion SL1 # 1 is larger than the size R2 of the molten pool MP2 for forming the layered portion SL2 # 1.
　構造層ＳＬ＃１とワークＷとが面する部分の少なくとも一部では、構造層ＳＬ＃１は、ワークＷと結合している。膜Ｃ１が除去された部分の少なくとも一部では、構造層ＳＬ＃１は、ワークＷと結合している。一方で、膜Ｃ１が残留している部分の少なくとも一部では、構造層ＳＬ＃１は、ワークＷから離れている（つまり、結合していない）。膜Ｃ１が除去されていない部分の少なくとも一部では、構造層ＳＬ＃１は、ワークＷから離れている。構造層ＳＬ＃１とワークＷとが面する部分とは異なる部分の少なくとも一部では、構造層ＳＬ＃１は、ワークＷから離れている。逆に言えば、構造層ＳＬ＃１がワークＷから離れている部分の少なくとも一部において、膜Ｃ１が残留している。 At least a part of the portion where the structural layer SL # 1 and the work W face each other, the structural layer SL # 1 is connected to the work W. In at least a part of the portion where the film C1 has been removed, the structural layer SL # 1 is bound to the work W. On the other hand, in at least a part of the portion where the film C1 remains, the structural layer SL # 1 is separated from the work W (that is, not bonded). The structural layer SL # 1 is separated from the work W at least in a part where the film C1 is not removed. The structural layer SL # 1 is separated from the work W at least in a part different from the portion where the structural layer SL # 1 and the work W face each other. Conversely, the film C1 remains in at least a part of the portion where the structural layer SL # 1 is separated from the work W.
　その結果、構造層ＳＬ＃１は、ワークＷと部分的に結合している。具体的には、構造層ＳＬ＃１は、膜Ｃ１を部分的に貫通して（つまり、突き抜けて）ワークＷと結合している。構造層ＳＬ＃１とワークＷとは部分的に離れている。構造層ＳＬ＃１は、ワークＷの表面ＷＳとの間に膜Ｃ１が介在する（つまり、残留する）ことでワークＷから離れた層部分ＳＬ１＃１と、ワークＷから離れていない（つまり、ワークＷと結合した）層部分ＳＬ２＃１とを含む。構造層ＳＬ＃１の下面は、ワークＷの表面ＷＳとの間に膜Ｃ１が介在することでワークＷと結合していない面部分（具体的には、層部分ＳＬ１＃２の下面）と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔を介してワークＷと結合した面部分（具体的には、層部分ＳＬ２＃１の下面）とを含む。 As a result, the structural layer SL # 1 is partially bonded to the work W. Specifically, the structural layer SL # 1 partially penetrates (that is, penetrates) the film C1 and is bonded to the work W. The structural layer SL # 1 and the work W are partially separated. The structural layer SL # 1 is not separated from the work W (that is, the layer portion SL1 # 1 separated from the work W by interposing (that is, remaining) the film C1 with the surface WS of the work W. Includes layer portion SL2 # 1 (combined with work W). The lower surface of the structural layer SL # 1 includes a surface portion (specifically, the lower surface of the layer portion SL1 # 2) that is not bonded to the work W due to the presence of the film C1 between the surface WS of the work W. It includes a surface portion (specifically, the lower surface of the layer portion SL2 # 1) that is bonded to the work W through the through hole formed in the film C1 by melting the film C1.
　その後、造形システム１は、構造層ＳＬを形成する都度、形成した構造層ＳＬの表面を新たな造形面ＭＳに設定すると共に、新たな造形面ＭＳに新たな構造層ＳＬを形成する動作を繰り返す。その結果、図１２に示すように、３次元構造物ＳＴが形成される。形成された３次元構造物ＳＴが上述した構造層ＳＬ＃１を含むがゆえに、３次元構造物ＳＴとワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ１が部分的に残留する。具体的には、３次元構造物ＳＴとワークＷとが面する部分の少なくとも一部では、３次元構造物ＳＴは、ワークＷと結合している。膜Ｃ１が除去された部分の少なくとも一部では、３次元構造物ＳＴは、ワークＷと結合している。一方で、膜Ｃ１が残留している部分の少なくとも一部では、３次元構造物ＳＴは、ワークＷから離れている（つまり、結合していない）。膜Ｃ１が除去されていない部分の少なくとも一部では、３次元構造物ＳＴは、ワークＷから離れている。３次元構造物ＳＴとワークＷとが面する部分とは異なる部分の少なくとも一部では、３次元構造物ＳＴは、ワークＷから離れている。逆に言えば、３次元構造物ＳＴがワークＷから離れている部分の少なくとも一部において、膜Ｃ１が残留している。 After that, each time the structural layer SL is formed, the modeling system 1 sets the surface of the formed structural layer SL on the new modeling surface MS, and repeats the operation of forming the new structural layer SL on the new modeling surface MS. .. As a result, as shown in FIG. 12, a three-dimensional structure ST is formed. Since the formed three-dimensional structure ST contains the above-mentioned structural layer SL # 1, the unmelted film C1 partially remains between the three-dimensional structure ST and the surface WS of the work W. .. Specifically, the three-dimensional structure ST is connected to the work W at least in a part of the portion where the three-dimensional structure ST and the work W face each other. In at least a part of the portion where the film C1 is removed, the three-dimensional structure ST is bonded to the work W. On the other hand, in at least a part of the portion where the film C1 remains, the three-dimensional structure ST is separated from the work W (that is, not bonded). At least a part of the portion where the film C1 has not been removed, the three-dimensional structure ST is separated from the work W. The three-dimensional structure ST is separated from the work W at least in a part different from the portion where the three-dimensional structure ST and the work W face each other. Conversely, the film C1 remains in at least a part of the portion where the three-dimensional structure ST is separated from the work W.
　その結果、３次元構造物ＳＴは、ワークＷと部分的に結合している。具体的には、３次元構造物ＳＴは、膜Ｃ１を部分的に貫通して（つまり、突き抜けて）ワークＷと結合している。３次元構造物ＳＴとワークＷとは部分的に離れている。３次元構造物ＳＴは、ワークＷの表面ＷＳとの間に膜Ｃ１が介在する（つまり、残留する）ことでワークＷから離れた構造部分と、ワークＷから離れていない（つまり、ワークＷと結合した）構造部分とを含む。３次元構造物ＳＴの下面は、ワークＷの表面ＷＳとの間に膜Ｃ１が介在することでワークＷと結合していない面部分と、膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔を介してワークＷと結合した面部分とを含む。 As a result, the three-dimensional structure ST is partially connected to the work W. Specifically, the three-dimensional structure ST partially penetrates (that is, penetrates) the film C1 and is bonded to the work W. The three-dimensional structure ST and the work W are partially separated. In the three-dimensional structure ST, the structural portion separated from the work W by interposing (that is, remaining) the film C1 between the surface WS of the work W and not separated from the work W (that is, the work W). Includes (combined) structural parts. The lower surface of the three-dimensional structure ST has a surface portion that is not bonded to the work W due to the presence of the film C1 between the surface WS of the work W and a penetration formed in the film C1 by melting the film C1. Includes a surface portion coupled to the work W through the hole.
　その後、ワークＷから３次元構造物ＳＴを分離するための処理が行われる。具体的には、ワークＷから３次元構造物ＳＴを分離するための力をワークＷ及び３次元構造物ＳＴの少なくとも一方に加える処理が、ワークＷから３次元構造物ＳＴを分離するための処理として行われる。例えば、ワークＷから３次元構造物ＳＴを引き剥がす力を３次元構造物ＳＴに加える処理が行われてもよい。例えば、ワークＷから３次元構造物ＳＴを引き剥がす力をワークＷに加える処理が行われてもよい。 After that, a process for separating the three-dimensional structure ST from the work W is performed. Specifically, the process of applying a force for separating the three-dimensional structure ST from the work W to at least one of the work W and the three-dimensional structure ST is a process for separating the three-dimensional structure ST from the work W. It is done as. For example, a process of applying a force for peeling the three-dimensional structure ST from the work W to the three-dimensional structure ST may be performed. For example, a process of applying a force for peeling the three-dimensional structure ST from the work W to the work W may be performed.
　この際、上述したように、３次元構造物ＳＴとワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ１が部分的に残留する。このため、３次元構造物ＳＴとワークＷの表面ＷＳとの間に膜Ｃ１が残留していない場合（図１３参照）と比較して、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなる。このため、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなった分だけ、３次元構造物ＳＴとワークＷとの間の結合力は弱くなる。従って、３次元構造物ＳＴとワークＷとの間の結合力は弱くなった分だけ、ワークＷから３次元構造物ＳＴを分離するために必要な力が小さくなる。その結果、ワークＷから３次元構造物ＳＴを分離するために必要な力が小さくなる分だけ、３次元構造物ＳＴのワークＷからの分離が容易になる。 At this time, as described above, the unmelted film C1 partially remains between the three-dimensional structure ST and the surface WS of the work W. Therefore, the area of the bonding surface between the three-dimensional structure ST and the work W is compared with the case where the film C1 does not remain between the three-dimensional structure ST and the surface WS of the work W (see FIG. 13). Becomes smaller. Therefore, the bonding force between the three-dimensional structure ST and the work W becomes weaker as the area of the bonding surface between the three-dimensional structure ST and the work W becomes smaller. Therefore, as the coupling force between the three-dimensional structure ST and the work W is weakened, the force required to separate the three-dimensional structure ST from the work W is reduced. As a result, the force required to separate the three-dimensional structure ST from the work W is reduced, so that the three-dimensional structure ST can be easily separated from the work W.
　より具体的には、ワークＷから３次元構造物ＳＴが分離される際には、３次元構造物ＳＴとワークＷとの結合面又はその近傍において３次元構造物ＳＴとワークＷとが結合した部分が破断する。従って、上述したワークＷから３次元構造物ＳＴを分離するための力は、実質的には、３次元構造物ＳＴとワークＷとが結合した部分を破断させるための力に相当する。この場合、３次元構造物ＳＴとワークＷとの結合面は、３次元構造物ＳＴとワークＷとが結合した部分が破断した際に現れる破断面と同一であってもよい。ここで、３次元構造物ＳＴとワークＷの表面ＷＳとの間に膜Ｃ１が残留している場合には（図１２参照）、３次元構造物ＳＴとワークＷの表面ＷＳとの間に膜Ｃ１が残留していない場合（図１３参照）と比較して、３次元構造物ＳＴとワークＷとが結合した部分が少なくなる。３次元構造物ＳＴとワークＷとが結合した部分を破断させるがゆえに、ワークＷから３次元構造物ＳＴを分離するために破断させるべき部分が少なくなる。このため、ワークＷから３次元構造物ＳＴを分離するために破断させるべき部分が少なくなった分だけ、３次元構造物ＳＴとワークＷとが結合した部分を破断させるために必要な力もまた小さくなる。その結果、３次元構造物ＳＴとワークＷとが結合した部分を破断させるために必要な力が小さくなる分だけ、３次元構造物ＳＴのワークＷからの分離が容易になる。 More specifically, when the three-dimensional structure ST is separated from the work W, the three-dimensional structure ST and the work W are bonded at or near the bonding surface between the three-dimensional structure ST and the work W. The part breaks. Therefore, the force for separating the three-dimensional structure ST from the work W described above substantially corresponds to the force for breaking the portion where the three-dimensional structure ST and the work W are connected. In this case, the bonding surface between the three-dimensional structure ST and the work W may be the same as the fracture surface that appears when the portion where the three-dimensional structure ST and the work W are bonded is broken. Here, when the film C1 remains between the three-dimensional structure ST and the surface WS of the work W (see FIG. 12), the film is formed between the three-dimensional structure ST and the surface WS of the work W. Compared with the case where C1 does not remain (see FIG. 13), the portion where the three-dimensional structure ST and the work W are connected is reduced. Since the portion where the three-dimensional structure ST and the work W are connected is broken, the portion to be broken in order to separate the three-dimensional structure ST from the work W is reduced. Therefore, the force required to break the portion where the three-dimensional structure ST and the work W are connected is also small as the portion to be broken in order to separate the three-dimensional structure ST from the work W is reduced. Become. As a result, the force required to break the portion where the three-dimensional structure ST and the work W are connected is reduced, so that the three-dimensional structure ST can be easily separated from the work W.
　加えて、造形動作が行われている期間中は、３次元構造物ＳＴを形成する過程でワークＷ上に形成される中間構造物（つまり、形成済みの構造層ＳＬ）は、構造層ＳＬ＃１を介してワークＷと部分的結合されている。従って、中間構造物の状態は、実質的には、ワークＷによって保持された状態と等価である。このため、中間構造物に生じた応力等に起因した中間構造物の変形（例えば、反り及び歪みの少なくとも一方）の発生が適切に抑制される。 In addition, during the period during which the modeling operation is performed, the intermediate structure (that is, the formed structural layer SL) formed on the work W in the process of forming the three-dimensional structure ST is the structural layer SL #. It is partially connected to the work W via 1. Therefore, the state of the intermediate structure is substantially equivalent to the state held by the work W. Therefore, the occurrence of deformation (for example, at least one of warpage and strain) of the intermediate structure due to stress generated in the intermediate structure is appropriately suppressed.
　図１２及び図１３から分かるように、３次元構造物ＳＴとワークＷの表面ＷＳとの間に残留する膜Ｃ１が多いほど、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなる。より具体的には、ワークＷ上に残留している膜Ｃ１とワークＷの表面ＷＳとの境界面の面積（つまり、ワークＷ上において膜Ｃ１が残留している部分の面積）が多くなるほど、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなる。ワークＷ上に残留している膜Ｃ１と３次元構造物ＳＴとの境界面の面積が多くなるほど、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなる。このため、造形システム１は、ワークＷ上に残留している膜Ｃ１とワークＷの表面ＷＳとの境界面の面積が第１所定面積以上になるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。造形システム１は、ワークＷ上に残留している膜Ｃ１と３次元構造物ＳＴとの境界面の面積が第２所定面積以上になるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。 As can be seen from FIGS. 12 and 13, the more the film C1 remaining between the three-dimensional structure ST and the surface WS of the work W, the smaller the area of the bonding surface between the three-dimensional structure ST and the work W. .. More specifically, the larger the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W (that is, the area of the portion where the film C1 remains on the work W), the more. The area of the bonding surface between the three-dimensional structure ST and the work W becomes smaller. As the area of the boundary surface between the film C1 remaining on the work W and the three-dimensional structure ST increases, the area of the bonding surface between the three-dimensional structure ST and the work W decreases. Therefore, the modeling system 1 has a three-dimensional structure ST (particularly, a structure) so that the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W is equal to or larger than the first predetermined area. Layer SL # 1) may be formed. In the modeling system 1, the three-dimensional structure ST (particularly, the structural layer SL #) is provided so that the area of the interface between the film C1 remaining on the work W and the three-dimensional structure ST is equal to or larger than the second predetermined area. 1) may be formed.
　造形システム１は、ワークＷ上に残留している膜Ｃ１とワークＷの表面ＷＳとの境界面の面積が、３次元構造物ＳＴとワークＷとの結合面の面積よりも大きくなるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。より具体的には、造形システム１は、ワークＷ上において３次元構造物ＳＴを形成するべき形成領域に対してワークＷ上に残留している膜Ｃ１とワークＷの表面ＷＳとの境界面の面積が占める割合が、形成領域に対して３次元構造物ＳＴとワークＷとの結合面の面積が占める割合よりも大きくなるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。この場合、ワークＷ上に残留している膜Ｃ１とワークＷの表面ＷＳとの境界面の面積が、３次元構造物ＳＴとワークＷとの結合面の面積よりも小さい場合と比較して、３次元構造物ＳＴのワークＷからの分離がより容易になる。 In the modeling system 1, the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W is larger than the area of the bonding surface between the three-dimensional structure ST and the work W. A three-dimensional structure ST (particularly, structural layer SL # 1) may be formed. More specifically, in the modeling system 1, the interface between the film C1 remaining on the work W and the surface WS of the work W with respect to the formation region on which the three-dimensional structure ST should be formed on the work W. The three-dimensional structure ST (particularly, the structural layer SL # 1) is provided so that the ratio occupied by the area is larger than the ratio occupied by the area of the bonding surface between the three-dimensional structure ST and the work W with respect to the formed region. It may be formed. In this case, the area of the boundary surface between the film C1 remaining on the work W and the surface WS of the work W is smaller than the area of the bonding surface between the three-dimensional structure ST and the work W. Separation of the three-dimensional structure ST from the work W becomes easier.
　また、造形システム１は、ワークＷ上に残留している膜Ｃ１と３次元構造物ＳＴとの境界面の面積が、３次元構造物ＳＴとワークＷとの結合面の面積よりも大きくなるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。より具体的には、造形システム１は、ワークＷ上において３次元構造物ＳＴを形成するべき形成領域に対してワークＷ上に残留している膜Ｃ１と３次元構造物ＳＴとの境界面の面積が占める割合が、形成領域に対して３次元構造物ＳＴとワークＷとの結合面の面積が占める割合よりも大きくなるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。この場合、ワークＷ上に残留している膜Ｃ１と３次元構造物ＳＴとの境界面の面積が、３次元構造物ＳＴとワークＷとの結合面の面積よりも小さい場合と比較して、３次元構造物ＳＴのワークＷからの分離がより容易になる。 Further, in the modeling system 1, the area of the boundary surface between the film C1 remaining on the work W and the three-dimensional structure ST is larger than the area of the bonding surface between the three-dimensional structure ST and the work W. 3D structure ST (particularly, structural layer SL # 1) may be formed. More specifically, in the modeling system 1, the interface between the film C1 remaining on the work W and the three-dimensional structure ST with respect to the formation region on which the three-dimensional structure ST should be formed is formed. The three-dimensional structure ST (particularly, the structural layer SL # 1) is provided so that the ratio occupied by the area is larger than the ratio occupied by the area of the bonding surface between the three-dimensional structure ST and the work W with respect to the formed region. It may be formed. In this case, the area of the interface between the film C1 remaining on the work W and the three-dimensional structure ST is smaller than the area of the bonding surface between the three-dimensional structure ST and the work W. Separation of the three-dimensional structure ST from the work W becomes easier.
　本実施形態では、最下層の構造層ＳＬ＃１がワークＷと一体化している。このため、３次元構造物ＳＴとワークＷとが結合した部分は、構造層ＳＬ＃１に含まれていてもよい。ワークＷから３次元構造物ＳＴを分離するために破断させるべき部分は、構造層ＳＬ＃１に含まれていてもよい。この場合、ワークＷから３次元構造物ＳＴが分離される様子を示す図１４に示すように、構造層ＳＬ＃１が破断されることで、ワークＷから３次元構造物ＳＴが分離されてもよい。より具体的には、構造層ＳＬ＃１のうち膜Ｃ１が溶融することで膜Ｃ１に形成された貫通孔の内部に位置する層部分ＳＬ２＃１が破断されることで、ワークＷから３次元構造物ＳＴが分離されてもよい。この場合、図１４に示すように、構造層ＳＬ＃１のうち破断面よりもワークＷ側に位置する部分ＳＬ＃１－１がワークＷと結合したままワークＷに残留してもよい。構造層ＳＬ＃１のうち破断面よりも３次元構造物ＳＴ側に位置する部分ＳＬ＃１－２が３次元構造物ＳＴと結合したままワークＷから分離されてもよい。 In this embodiment, the lowermost structural layer SL # 1 is integrated with the work W. Therefore, the portion where the three-dimensional structure ST and the work W are connected may be included in the structural layer SL # 1. The portion to be broken in order to separate the three-dimensional structure ST from the work W may be included in the structural layer SL # 1. In this case, as shown in FIG. 14 showing how the three-dimensional structure ST is separated from the work W, even if the three-dimensional structure ST is separated from the work W by breaking the structural layer SL # 1. Good. More specifically, the layer portion SL2 # 1 located inside the through hole formed in the film C1 is broken by melting the film C1 of the structural layer SL # 1, so that the work W is three-dimensional. The structure ST may be separated. In this case, as shown in FIG. 14, the portion SL # 1-1 of the structural layer SL # 1 located on the work W side with respect to the fracture surface may remain in the work W while being bonded to the work W. The portion SL # 1-2 of the structural layer SL # 1 located on the three-dimensional structure ST side of the fracture surface may be separated from the work W while being coupled to the three-dimensional structure ST.
　また、図１４に示すように、３次元構造物ＳＴとワークＷの表面ＷＳとの間に残留している膜Ｃ１の少なくとも一部は、３次元構造物ＳＴに付着したままであってもよい。図１４に示すように、３次元構造物ＳＴとワークＷの表面ＷＳとの間に残留している膜Ｃ１の少なくとも一部は、ワークＷに付着したままであってもよい。 Further, as shown in FIG. 14, at least a part of the film C1 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the three-dimensional structure ST. .. As shown in FIG. 14, at least a part of the film C1 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the work W.
　ワークＷから３次元構造物ＳＴを分離する際に膜Ｃ１の少なくとも一部が３次元構造物ＳＴに付着したままである場合には、ワークＷから３次元構造物ＳＴを分離する際にワークＷから膜Ｃ１が分離される。この場合、膜ＣのワークＷに対する濡れ性が相対的に低い場合には、ワークＷから膜Ｃ１を分離するために必要な力（つまり、ワークＷから３次元構造物ＳＴを分離するために必要な力）が小さくなる。なぜならば、膜ＣのワークＷに対する濡れ性が低くなるほど、膜ＣとワークＷとの間の結合力が小さくなるからである。このため、膜Ｃ１のワークＷに対する濡れ性が所定量よりも小さくてもよい。特に、膜Ｃ１のワークＷに対する濡れ性が、造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低ければ、ワークＷから３次元構造物ＳＴを分離するために必要な力が、膜Ｃ１の存在に起因して過度に大きくなってしまうことはない。典型的には、膜Ｃ１のワークＷに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低い場合には、ワークＷから３次元構造物ＳＴを分離するために必要な力が実質的には造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性によって定まるとも言えるがゆえに、ワークＷから３次元構造物ＳＴを分離するために必要な力は、膜Ｃ１の存在に関わらず殆ど変わることはない。このため、膜Ｃ１のワークＷに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低くてもよい。つまり、膜Ｃ１とワークＷとの間の結合力は、造形材料Ｍ及び３次元構造物ＳＴとワークＷとの間の結合力よりも低くてもよい。その結果、膜Ｃ１のワークＷに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも高い場合と比較して、３次元構造物ＳＴのワークＷからの分離がより容易になる。 If at least a part of the membrane C1 remains attached to the three-dimensional structure ST when the three-dimensional structure ST is separated from the work W, the work W is separated from the work W when the three-dimensional structure ST is separated. The membrane C1 is separated from. In this case, when the wettability of the film C with respect to the work W is relatively low, the force required to separate the film C1 from the work W (that is, necessary to separate the three-dimensional structure ST from the work W). Power) becomes smaller. This is because the lower the wettability of the film C with respect to the work W, the smaller the binding force between the film C and the work W. Therefore, the wettability of the film C1 to the work W may be smaller than a predetermined amount. In particular, if the wettability of the film C1 to the work W is lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W, the force required to separate the three-dimensional structure ST from the work W is increased. It does not become excessively large due to the presence of the film C1. Typically, when the wettability of the film C1 to the work W is lower than the wettability of the molding material M and the three-dimensional structure ST to the work W, it is necessary to separate the three-dimensional structure ST from the work W. Since it can be said that the force is substantially determined by the wettability of the modeling material M and the three-dimensional structure ST with respect to the work W, the force required to separate the three-dimensional structure ST from the work W is the force of the film C1. It hardly changes regardless of its existence. Therefore, the wettability of the film C1 to the work W may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. That is, the bonding force between the film C1 and the work W may be lower than the bonding force between the modeling material M and the three-dimensional structure ST and the work W. As a result, it is easier to separate the three-dimensional structure ST from the work W as compared with the case where the wettability of the film C1 to the work W is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W. become.
　ワークＷから３次元構造物ＳＴを分離する際に膜Ｃ１の少なくとも一部がワークＷに付着したままである場合には、ワークＷから３次元構造物ＳＴを分離する際に３次元構造物ＳＴから膜Ｃ１が分離される。この場合、膜Ｃの３次元構造物ＳＴに対する濡れ性（つまり、造形材料Ｍに対する濡れ性）が相対的に低い場合には、３次元構造物ＳＴから膜Ｃ１を分離するために必要な力（つまり、ワークＷから３次元構造物ＳＴを分離するために必要な力）が小さくなる。なぜならば、膜Ｃの３次元構造物ＳＴに対する濡れ性が低くなるほど、膜Ｃと３次元構造物ＳＴとの間の結合力が小さくなるからである。このため、膜Ｃ１の３次元構造物ＳＴに対する濡れ性が所定量よりも小さくてもよい。特に、膜Ｃ１の３次元構造物ＳＴに対する濡れ性が、造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低ければ、ワークＷから３次元構造物ＳＴを分離するために必要な力が、膜Ｃ１の存在に起因して過度に大きくなってしまうことはない。典型的には、膜Ｃ１の３次元構造物ＳＴに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低い場合には、ワークＷから３次元構造物ＳＴを分離するために必要な力が実質的には造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性によって定まるとも言えるがゆえに、ワークＷから３次元構造物ＳＴを分離するために必要な力は、膜Ｃ１の存在に関わらず殆ど変わることはない。このため、膜Ｃ１の３次元構造物ＳＴに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低くてもよい。つまり、膜Ｃ１と３次元構造物ＳＴとの間の結合力は、造形材料Ｍ及び３次元構造物ＳＴとワークＷとの間の結合力よりも低くてもよい。その結果、膜Ｃ１の３次元構造物ＳＴに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも高い場合と比較して、３次元構造物ＳＴのワークＷからの分離がより容易になる。 If at least a part of the film C1 remains attached to the work W when the three-dimensional structure ST is separated from the work W, the three-dimensional structure ST is separated from the work W when the three-dimensional structure ST is separated. The membrane C1 is separated from. In this case, when the wettability of the film C to the three-dimensional structure ST (that is, the wettability to the modeling material M) is relatively low, the force (that is, the force required to separate the film C1 from the three-dimensional structure ST). That is, the force required to separate the three-dimensional structure ST from the work W) becomes small. This is because the lower the wettability of the film C with respect to the three-dimensional structure ST, the smaller the bonding force between the film C and the three-dimensional structure ST. Therefore, the wettability of the film C1 to the three-dimensional structure ST may be smaller than a predetermined amount. In particular, if the wettability of the film C1 to the three-dimensional structure ST is lower than the wettability of the molding material M and the three-dimensional structure ST to the work W, it is necessary to separate the three-dimensional structure ST from the work W. The force does not become excessively large due to the presence of the film C1. Typically, when the wettability of the film C1 to the three-dimensional structure ST is lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W, the three-dimensional structure ST is separated from the work W. Since it can be said that the force required for this is substantially determined by the wettability of the modeling material M and the 3D structure ST to the work W, the force required to separate the 3D structure ST from the work W is There is almost no change regardless of the presence of the film C1. Therefore, the wettability of the film C1 to the three-dimensional structure ST may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. That is, the bonding force between the film C1 and the three-dimensional structure ST may be lower than the bonding force between the modeling material M and the three-dimensional structure ST and the work W. As a result, the wettability of the film C1 to the three-dimensional structure ST is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W, and the separation of the three-dimensional structure ST from the work W Will be easier.
　（３－２）膜Ｃ２が形成されたワークＷに対して行われる造形動作
　膜Ｃ２がワークＷの表面ＷＳに形成される場合には、膜Ｃ２が表面ＷＳに形成されたワークＷを示す断面図である図１５に示すように、膜Ｃ２の表面粗さは、ワークＷの表面ＷＳの表面粗さよりも大きくてもよい。つまり、膜Ｃ２の表面（具体的には、ワークＷの表面ＷＳに接する面とは反対側の面であって、＋Ｚ側を向いた面）は、ワークＷの表面ＷＳよりも粗くてもよい。つまり、ワークＷの表面ＷＳには、ワークＷの表面ＷＳよりも粗い表面を有する膜Ｃ２が形成される。 (3-2) Modeling operation performed on the work W on which the film C2 is formed When the film C2 is formed on the surface WS of the work W, a cross section showing the work W in which the film C2 is formed on the surface WS. As shown in FIG. 15, which is a figure, the surface roughness of the film C2 may be larger than the surface roughness of the surface WS of the work W. That is, the surface of the film C2 (specifically, the surface of the work W opposite to the surface in contact with the surface WS and facing the + Z side) may be rougher than the surface WS of the work W. .. That is, a film C2 having a rougher surface than the surface WS of the work W is formed on the surface WS of the work W.
　膜Ｃ２の表面粗さが相対的に大きい（つまり、膜Ｃ２の表面が相対的に粗い）がゆえに、図１５に示すように、膜Ｃ２の表面は、微小な又は所望のサイズの凹凸が形成された凹凸面と等価である。つまり、膜Ｃ２の表面は、微小な又は所望のサイズの凹凸が形成された凹凸面を含む。言い換えれば、膜Ｃ２の表面は、粗面と等価である。つまり、膜Ｃ２の表面は、粗面を含む。 Since the surface roughness of the film C2 is relatively large (that is, the surface of the film C2 is relatively rough), as shown in FIG. 15, the surface of the film C2 is formed with minute or desired size irregularities. It is equivalent to the uneven surface. That is, the surface of the film C2 includes an uneven surface on which fine or desired size irregularities are formed. In other words, the surface of the film C2 is equivalent to a rough surface. That is, the surface of the film C2 includes a rough surface.
　このような膜Ｃ２の一例として、例えば、ワークＷの表面ＷＳに対してリューブライト処理を行うことで当該表面ＷＳに形成されるリン酸塩（たとえば、リン酸マンガン塩）の膜があげられる。 As an example of such a film C2, for example, a film of a phosphate (for example, a manganese phosphate salt) formed on the surface WS of the work W by performing a lubelite treatment on the surface WS can be mentioned.
　膜Ｃの表面粗さがワークＷの表面粗さよりも大きい場合には、膜Ｃの表面粗さがワークＷの表面粗さよりも小さい場合と比較して、ワークＷと３次元構造物ＳＴとの間に膜Ｃの少なくとも一部が残留しやすくなる。以下、ワークＷと３次元構造物ＳＴとの間に膜Ｃの少なくとも一部が残留する理由について、図１６から図１８を参照しながら説明する。 When the surface roughness of the film C is larger than the surface roughness of the work W, the surface roughness of the film C is smaller than the surface roughness of the work W, and the work W and the three-dimensional structure ST are compared with each other. At least a part of the film C tends to remain between them. Hereinafter, the reason why at least a part of the film C remains between the work W and the three-dimensional structure ST will be described with reference to FIGS. 16 to 18.
　膜Ｃ２が形成されたワークＷに対して造形動作を開始する場合においても、造形システム１は、上述した膜Ｃ１が形成されたワークＷに対して造形動作と同様の動作を行う。このため、まずは、造形システム１は、ワークＷ上に最下層の構造層ＳＬ（つまり、構造層ＳＬ＃１）を形成する。具体的には、ワークＷの表面ＷＳに設定された造形面ＭＳに対する光ＥＬの照射及び造形材料Ｍの供給を開始する。但し、ワークＷの表面ＷＳに膜Ｃ２が形成されているがゆえに、実際には、光ＥＬが膜Ｃ２に照射され且つ造形材料Ｍは膜Ｃ２に供給される。このため、溶融池ＭＰは、膜Ｃ２上に形成される。ここで、膜Ｃ２の表面粗さが相対的に大きい（つまり、ワークＷの表面粗さよりも大きい）がゆえに、膜Ｃ２は、厚さが相対的に大きい凸部分と、厚さが相対的に小さい凹部分（つまり、凸部分よりも窪んだ凹部分）とを含む。このため、凸部分は、凹部分と比較して、光ＥＬの照射によって完全に溶融しにくい。つまり、膜Ｃ２のうちの光ＥＬが照射された膜部分の一部（典型的には、凹部分及び凸部分のそれぞれの少なくとも一部）が溶融する一方で、膜Ｃ２のうちの光ＥＬが照射された膜部分の他の一部（典型的には、凸部分の少なくとも一部）が溶融しない。典型的には、膜Ｃ２の凹部分では、膜Ｃ２を貫通した貫通孔が形成される程度に膜Ｃ２が溶融して除去される一方で、膜Ｃ２のうちの凸部分では、膜Ｃ２を貫通した貫通孔が形成されない程度にしか膜Ｃ２が溶融しない。つまり、膜Ｃ２のうちの凹部分が溶融して貫通孔が形成される一方で、膜Ｃ２のうちの凸部分は、その一部がワークＷ上に残留する程度にしか溶融しない。このため、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、膜Ｃ２上での溶融池ＭＰのサイズ（具体的には、径）と比較して、膜Ｃ２の溶融部分のサイズ（具体的には、径）が小さくなる。 Even when the modeling operation is started for the work W on which the film C2 is formed, the modeling system 1 performs the same operation as the modeling operation for the work W on which the film C1 is formed. Therefore, first, the modeling system 1 forms the lowest structural layer SL (that is, the structural layer SL # 1) on the work W. Specifically, the irradiation of light EL and the supply of the modeling material M to the modeling surface MS set on the surface WS of the work W are started. However, since the film C2 is formed on the surface WS of the work W, the light EL is actually irradiated to the film C2 and the modeling material M is supplied to the film C2. Therefore, the molten pool MP is formed on the film C2. Here, since the surface roughness of the film C2 is relatively large (that is, larger than the surface roughness of the work W), the film C2 has a convex portion having a relatively large thickness and a thickness relatively large. Includes small recesses (that is, recesses that are recessed rather than convex). Therefore, the convex portion is less likely to be completely melted by irradiation with light EL as compared with the concave portion. That is, while a part of the film portion (typically at least a part of each of the concave portion and the convex portion) irradiated with the light EL of the film C2 is melted, the light EL of the film C2 is formed. The other part of the irradiated membrane portion (typically at least a portion of the convex portion) does not melt. Typically, the concave portion of the membrane C2 melts and removes the membrane C2 to the extent that a through hole penetrating the membrane C2 is formed, while the convex portion of the membrane C2 penetrates the membrane C2. The film C2 melts only to the extent that the through holes are not formed. That is, while the concave portion of the film C2 is melted to form a through hole, the convex portion of the film C2 is melted only to the extent that a part thereof remains on the work W. Therefore, as in the case where the modeling operation is performed on the work W on which the film C1 is formed, the molten portion of the film C2 is compared with the size (specifically, the diameter) of the molten pool MP on the film C2. Size (specifically, diameter) becomes smaller.
　この場合、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、溶融池ＭＰとワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ２が部分的に残留することになる。溶融池ＭＰとワークＷの表面ＷＳとの間に溶融しなかった膜Ｃ２が部分的に残留する場合には、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、図１６に示すように、固化した造形材料ＭとワークＷの表面ＷＳとの間に溶融しなかった膜Ｃ２が部分的に残留する。尚、図１６は、ワークＷの表面ＷＳとの間に膜Ｃ２が部分的に残留するように固化した造形材料Ｍを示す断面図である。つまり、膜Ｃ２が形成されたワークＷに造形動作が行われる場合においても、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、構造層ＳＬ＃１とワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ２が部分的に残留する。 In this case, the unmelted film C2 partially remains between the molten pool MP and the surface WS of the work W, as in the case where the modeling operation is performed on the work W on which the film C1 is formed. become. When the unmelted film C2 partially remains between the molten pool MP and the surface WS of the work W, FIG. 16A is similar to the case where the molding operation is performed on the work W on which the film C1 is formed. As shown in the above, the unmelted film C2 partially remains between the solidified modeling material M and the surface WS of the work W. FIG. 16 is a cross-sectional view showing a modeling material M solidified so that the film C2 partially remains between the work W and the surface WS. That is, even when the modeling operation is performed on the work W on which the film C2 is formed, the surface WS of the structural layer SL # 1 and the work W is similar to the case where the modeling operation is performed on the work W on which the film C1 is formed. The unmelted film C2 partially remains between and.
　その後、造形システム１は、構造層ＳＬを形成する都度、形成した構造層ＳＬの表面を新たな造形面ＭＳに設定すると共に、新たな造形面ＭＳに新たな構造層ＳＬを形成する動作を繰り返す。その結果、図１７に示すように、３次元構造物ＳＴが形成される。形成された３次元構造物ＳＴが上述した構造層ＳＬ＃１を含むがゆえに、膜Ｃ２が形成されたワークＷに造形動作が行われる場合においても、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、３次元構造物ＳＴとワークＷの表面ＷＳとの間には、溶融しなかった膜Ｃ２が部分的に残留する。 After that, each time the structural layer SL is formed, the modeling system 1 sets the surface of the formed structural layer SL on the new modeling surface MS, and repeats the operation of forming the new structural layer SL on the new modeling surface MS. .. As a result, as shown in FIG. 17, a three-dimensional structure ST is formed. Since the formed three-dimensional structure ST includes the structural layer SL # 1 described above, even when the modeling operation is performed on the work W on which the film C2 is formed, the modeling operation is performed on the work W on which the film C1 is formed. The unmelted film C2 partially remains between the three-dimensional structure ST and the surface WS of the work W, as in the case where
　その後、膜Ｃ２が形成されたワークＷに造形動作が行われる場合においても、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、ワークＷから３次元構造物ＳＴを分離するための処理が行われる。この場合、３次元構造物ＳＴとワークＷの表面ＷＳとの間に溶融しなかった膜Ｃ２が部分的に残留しているがゆえに、３次元構造物ＳＴとワークＷの表面ＷＳとの間に溶融しなかった膜Ｃ２が部分的に残留していない場合と比較して、３次元構造物ＳＴのワークＷからの分離が容易になる。その理由は、３次元構造物ＳＴとワークＷの表面ＷＳとの間に膜Ｃ１が部分的に残留している状況下でワークＷから３次元構造物ＳＴを分離するための処理についての上述した説明において既に説明済みである。つまり、ワークＷから３次元構造物ＳＴが分離される様子を示す図１８に示すように、構造層ＳＬ＃１が破断されることで、ワークＷから３次元構造物ＳＴが分離されてもよい。より具体的には、構造層ＳＬ＃１のうち膜Ｃ２が溶融することで膜Ｃ２に形成された貫通孔の内部に位置する部分が破断されることで、ワークＷから３次元構造物ＳＴが分離されてもよい。この場合、図１８に示すように、構造層ＳＬ＃１のうち破断面よりもワークＷ側に位置する部分ＳＬ＃１－１がワークＷと結合したままワークＷに残留してもよい。また、構造層ＳＬ＃１のうち破断面よりも３次元構造物ＳＴ側に位置する部分ＳＬ＃１－１が３次元構造物ＳＴと結合したままワークＷから分離されてもよい。 After that, even when the modeling operation is performed on the work W on which the film C2 is formed, the three-dimensional structure ST is separated from the work W in the same manner as when the modeling operation is performed on the work W on which the film C1 is formed. Processing is performed. In this case, since the unmelted film C2 partially remains between the three-dimensional structure ST and the surface WS of the work W, there is a partial residue between the three-dimensional structure ST and the surface WS of the work W. The separation of the three-dimensional structure ST from the work W becomes easier as compared with the case where the unmelted film C2 does not partially remain. The reason is described above for the process for separating the three-dimensional structure ST from the work W in the situation where the film C1 partially remains between the three-dimensional structure ST and the surface WS of the work W. It has already been explained in the explanation. That is, as shown in FIG. 18 showing how the three-dimensional structure ST is separated from the work W, the three-dimensional structure ST may be separated from the work W by breaking the structural layer SL # 1. .. More specifically, the portion of the structural layer SL # 1 located inside the through hole formed in the film C2 is broken by melting the film C2, so that the three-dimensional structure ST is released from the work W. It may be separated. In this case, as shown in FIG. 18, the portion SL # 1-1 of the structural layer SL # 1 located on the work W side with respect to the fracture surface may remain in the work W while being bonded to the work W. Further, the portion SL # 1-1 of the structural layer SL # 1 located on the three-dimensional structure ST side of the fracture surface may be separated from the work W while being coupled to the three-dimensional structure ST.
　尚、膜Ｃ２が形成されたワークＷに造形動作が行われる場合においても、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、３次元構造物ＳＴとワークＷの表面ＷＳとの間に残留する膜Ｃ２が多いほど、３次元構造物ＳＴとワークＷとの結合面の面積が小さくなる。このため、造形システム１は、ワークＷ上に残留している膜Ｃ２とワークＷの表面ＷＳとの境界面の面積が第１所定面積以上になるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。造形システム１は、ワークＷ上に残留している膜Ｃ２と３次元構造物ＳＴとの境界面の面積が第２所定面積以上になるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。造形システム１は、ワークＷ上に残留している膜Ｃ２とワークＷの表面ＷＳとの境界面の面積が、３次元構造物ＳＴとワークＷとの結合面の面積よりも大きくなるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。造形システム１は、ワークＷ上に残留している膜Ｃ２と３次元構造物ＳＴとの境界面の面積が、３次元構造物ＳＴとワークＷとの結合面の面積よりも大きくなるように、３次元構造物ＳＴ（特に、構造層ＳＬ＃１）を形成してもよい。 Even when the modeling operation is performed on the work W on which the film C2 is formed, the surface WS of the three-dimensional structure ST and the work W is the same as when the modeling operation is performed on the work W on which the film C1 is formed. The more the film C2 remaining between the two, the smaller the area of the bonding surface between the three-dimensional structure ST and the work W. Therefore, the modeling system 1 has a three-dimensional structure ST (particularly, a structure) so that the area of the boundary surface between the film C2 remaining on the work W and the surface WS of the work W is equal to or larger than the first predetermined area. Layer SL # 1) may be formed. In the modeling system 1, the three-dimensional structure ST (particularly, the structural layer SL #) is provided so that the area of the interface between the film C2 remaining on the work W and the three-dimensional structure ST is equal to or larger than the second predetermined area. 1) may be formed. In the modeling system 1, the area of the boundary surface between the film C2 remaining on the work W and the surface WS of the work W is larger than the area of the bonding surface between the three-dimensional structure ST and the work W. A three-dimensional structure ST (particularly, structural layer SL # 1) may be formed. In the modeling system 1, the area of the interface between the film C2 remaining on the work W and the three-dimensional structure ST is larger than the area of the bonding surface between the three-dimensional structure ST and the work W. A three-dimensional structure ST (particularly, structural layer SL # 1) may be formed.
　また、図１８に示すように、３次元構造物ＳＴとワークＷの表面ＷＳとの間に残留している膜Ｃ２の少なくとも一部は、３次元構造物ＳＴに付着したままであってもよい。３次元構造物ＳＴとワークＷの表面ＷＳとの間に残留している膜Ｃ２の少なくとも一部は、ワークＷに付着したままであってもよい。 Further, as shown in FIG. 18, at least a part of the film C2 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the three-dimensional structure ST. .. At least a part of the film C2 remaining between the three-dimensional structure ST and the surface WS of the work W may remain attached to the work W.
　ワークＷから３次元構造物ＳＴを分離する際に膜Ｃ２の少なくとも一部が３次元構造物ＳＴに付着したままである場合には、ワークＷから３次元構造物ＳＴを分離する際にワークＷから膜Ｃ２が分離される。このため、膜Ｃ２が形成されたワークＷに造形動作が行われる場合においても、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、膜Ｃ２のワークＷに対する濡れ性が所定量よりも小さくてもよい。膜Ｃ２のワークＷに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低くてもよい。その結果、膜Ｃ２のワークＷに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも高い場合と比較して、３次元構造物ＳＴのワークＷからの分離がより容易になる。 If at least a part of the film C2 remains attached to the three-dimensional structure ST when the three-dimensional structure ST is separated from the work W, the work W is separated from the work W when the three-dimensional structure ST is separated. The membrane C2 is separated from. Therefore, even when the modeling operation is performed on the work W on which the film C2 is formed, the wettability of the film C2 to the work W is determined as in the case where the modeling operation is performed on the work W on which the film C1 is formed. It may be smaller than the fixed amount. The wettability of the film C2 to the work W may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. As a result, it is easier to separate the three-dimensional structure ST from the work W as compared with the case where the wettability of the film C2 to the work W is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W. become.
　ワークＷから３次元構造物ＳＴを分離する際に膜Ｃ２の少なくとも一部がワークＷに付着したままである場合には、ワークＷから３次元構造物ＳＴを分離する際に３次元構造物ＳＴから膜Ｃ２が分離される。このため、膜Ｃ２が形成されたワークＷに造形動作が行われる場合においても、膜Ｃ１が形成されたワークＷに造形動作が行われる場合と同様に、膜Ｃ２の３次元構造物ＳＴに対する濡れ性が所定量よりも小さくてもよい。膜Ｃ２の３次元構造物ＳＴに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも低くてもよい。その結果、膜Ｃ２の３次元構造物ＳＴに対する濡れ性が造形材料Ｍ及び３次元構造物ＳＴのワークＷに対する濡れ性よりも高い場合と比較して、３次元構造物ＳＴのワークＷからの分離がより容易になる。 If at least a part of the film C2 remains attached to the work W when the three-dimensional structure ST is separated from the work W, the three-dimensional structure ST is separated from the work W when the three-dimensional structure ST is separated. The membrane C2 is separated from. Therefore, even when the modeling operation is performed on the work W on which the film C2 is formed, the film C2 is wetted with respect to the three-dimensional structure ST as in the case where the modeling operation is performed on the work W on which the film C1 is formed. The sex may be less than a predetermined amount. The wettability of the film C2 to the three-dimensional structure ST may be lower than the wettability of the modeling material M and the three-dimensional structure ST to the work W. As a result, the wettability of the film C2 to the three-dimensional structure ST is higher than the wettability of the modeling material M and the three-dimensional structure ST to the work W, and the separation of the three-dimensional structure ST from the work W Will be easier.
　（４）変形例
　ワークＷとして、黒鉛材料から構成されるワークＷが用いられてもよい。黒鉛材料の一例として、高強度炭素繊維で補強された炭素複合材料（いわゆる、Ｃ／Ｃコンポジット（Ｃａｒｂｏｎ　Ｆｉｂｅｒ　Ｒｅｉｎｆｏｒｃｅｄ　Ｃａｒｂｏｎ　Ｃｏｍｐｏｓｉｔｅ））、及び、等方性黒鉛材料の少なくとも一方があげられる。 (4) As the modified work W, a work W composed of a graphite material may be used. As an example of the graphite material, at least one of a carbon composite material reinforced with high-strength carbon fiber (so-called C / C composite (Carbon Fiber Reinforced Carbon Composite)) and an isotropic graphite material can be mentioned.
　上述した説明では、造形システム１は、造形ヘッド１１を移動させるヘッド駆動系１２を備えている。しかしながら、造形システム１は、ヘッド駆動系１２に加えて又は代えて、ステージ１３を移動させるステージ駆動系を備えていてもよい。ステージ駆動系は、ステージ１３をＸ軸方向、Ｙ軸方向、Ｚ軸方向、θＸ方向、θＹ方向及びθＺ方向の少なくとも一つの回転方向に移動させてもよい。ステージ駆動系によるステージ１３の移動により、ヘッド駆動系１２による造形ヘッド１１の移動と同様に、ステージ１３と造形ヘッド１１との間の相対的な位置関係が変更され、ひいては、ワークＷと照射領域ＥＡとの間の相対的な位置関係が変更される。 In the above description, the modeling system 1 includes a head drive system 12 for moving the modeling head 11. However, the modeling system 1 may include a stage drive system for moving the stage 13 in addition to or in place of the head drive system 12. The stage drive system may move the stage 13 in at least one rotation direction of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. The movement of the stage 13 by the stage drive system changes the relative positional relationship between the stage 13 and the modeling head 11 in the same manner as the movement of the modeling head 11 by the head drive system 12, and by extension, the work W and the irradiation area. The relative positional relationship with the EA is changed.
　上述した説明では、造形システム１は、造形ヘッド１１を移動させることで、造形面ＭＳに対して照射領域ＥＡを移動させている。しかしながら、造形システム１は、造形ヘッド１１を移動させることに加えて又は代えて、光ＥＬを偏向させることで造形面ＭＳに対して照射領域ＥＡを移動させてもよい。この場合、照射系１１１は、例えば、光ＥＬを偏向可能な光学系（例えば、ガルバノミラー等）を備えていてもよい。 In the above description, the modeling system 1 moves the irradiation region EA with respect to the modeling surface MS by moving the modeling head 11. However, in addition to or instead of moving the modeling head 11, the modeling system 1 may move the irradiation region EA with respect to the modeling surface MS by deflecting the optical EL. In this case, the irradiation system 111 may include, for example, an optical system capable of deflecting the optical EL (for example, a galvanometer mirror or the like).
　上述した説明では、造形システム１は、造形材料Ｍに光ＥＬを照射することで、造形材料Ｍを溶融させている。しかしながら、造形システム１は、任意のエネルギビームを造形材料Ｍに照射することで、造形材料Ｍを溶融させてもよい。この場合、造形システム１は、照射系１１１に加えて又は代えて、任意のエネルギビームを照射可能なビーム照射装置を備えていてもよい。任意のエネルギビームは、限定されないが、電子ビーム、イオンビーム等の荷電粒子ビーム又は電磁波を含む。 In the above description, the modeling system 1 melts the modeling material M by irradiating the modeling material M with light EL. However, the modeling system 1 may melt the modeling material M by irradiating the modeling material M with an arbitrary energy beam. In this case, the modeling system 1 may include a beam irradiation device capable of irradiating an arbitrary energy beam in addition to or in place of the irradiation system 111. Any energy beam includes, but is not limited to, a charged particle beam such as an electron beam, an ion beam, or an electromagnetic wave.
　上述した説明では、造形システム１は、レーザ肉盛溶接法により３次元構造物ＳＴを形成可能である。しかしながら、造形システム１は、３次元構造物ＳＴを形成可能なその他の方式により造形材料Ｍから３次元構造物ＳＴを形成してもよい。その他の方式の一例として、例えば、粉末焼結積層造形法（ＳＬＳ：Ｓｅｌｅｃｔｉｖｅ　Ｌａｓｅｒ　Ｓｉｎｔｅｒｉｎｇ）等の粉末床溶融結合法（Ｐｏｗｄｅｒ　Ｂｅｄ　Ｆｕｓｉｏｎ）があげられる。粉末床溶融結合法は、光ＥＬを照射しながら光ＥＬの照射領域ＥＡに造形材料Ｍを供給するレーザ肉盛溶接法とは異なり、予め供給しておいた造形材料Ｍに光ＥＬ等を照射して３次元構造物ＳＴを形成する。その他の方式の他の一例として、結合材噴射法（Ｂｉｎｄｅｒ　Ｊｅｔｔｉｎｇ）又は、レーザメタルフュージョン法（ＬＭＦ：Ｌａｓｅｒ　Ｍｅｔａｌ　Ｆｕｓｉｏｎ）があげられる。 In the above description, the modeling system 1 can form the three-dimensional structure ST by the laser overlay welding method. However, the modeling system 1 may form the three-dimensional structure ST from the modeling material M by another method capable of forming the three-dimensional structure ST. As an example of other methods, for example, a powder bed melt bonding method (Power Bed Fusion) such as a powder sintering laminated molding method (SLS: Selective Laser Sintering) can be mentioned. The powder bed fusion bonding method is different from the laser overlay welding method in which the modeling material M is supplied to the irradiation region EA of the light EL while irradiating the light EL, and the modeling material M supplied in advance is irradiated with the light EL or the like. To form the three-dimensional structure ST. As another example of the other method, there is a binder injection method (Binder Jetting) or a laser metal fusion method (LMF: Laser Metal Fusion).
　上述した説明では、造形システム１は、照射系１１１が加工光ＥＬを照射する照射領域ＥＡに向けて材料ノズル１１２から造形材料Ｍを供給することで、３次元構造物ＳＴを形成している。しかしながら、造形システム１は、照射光学系１１１から加工光ＥＬを照射することなく、材料ノズル１１２から造形材料Ｍを供給することで３次元構造物ＳＴを形成してもよい。例えば、造形システム１は、材料ノズル１１２から、造形面ＭＳに対して造形材料Ｍを吹き付けることで、造形面ＭＳにおいて造形材料Ｍを溶融させると共に、溶融した造形材料Ｍを固化させることで、３次元構造物ＳＴを形成してもよい。例えば、造形システム１は、材料ノズル１１２から造形面ＭＳに対して造形材料Ｍを含む気体を超高速で吹き付けることで、造形面ＭＳにおいて造形材料Ｍを溶融させると共に、溶融した造形材料Ｍを固化させることで、３次元構造物ＳＴを形成してもよい。例えば、造形システム１は、材料ノズル１１２から造形面ＭＳに対して加熱した造形材料Ｍを吹き付けることで、造形面ＭＳにおいて造形材料Ｍを溶融させると共に、溶融した造形材料Ｍを固化させることで、３次元構造物ＳＴを形成してもよい。このように照射系１１１から加工光ＥＬを照射することなく３次元構造物ＳＴを形成する場合には、造形システム１（特に、造形ヘッド１１）は、照射系１１１を備えていなくてもよい。 In the above description, the modeling system 1 forms the three-dimensional structure ST by supplying the modeling material M from the material nozzle 112 toward the irradiation region EA where the irradiation system 111 irradiates the processing light EL. However, the modeling system 1 may form the three-dimensional structure ST by supplying the modeling material M from the material nozzle 112 without irradiating the processing light EL from the irradiation optical system 111. For example, in the modeling system 1, the modeling material M is sprayed onto the modeling surface MS from the material nozzle 112 to melt the modeling material M on the modeling surface MS and solidify the melted modeling material M. The dimensional structure ST may be formed. For example, the modeling system 1 melts the modeling material M on the modeling surface MS and solidifies the melted modeling material M by blowing a gas containing the modeling material M onto the modeling surface MS from the material nozzle 112 at an ultra-high speed. By allowing the three-dimensional structure ST to be formed. For example, the modeling system 1 melts the modeling material M on the modeling surface MS by spraying the heated modeling material M onto the modeling surface MS from the material nozzle 112, and solidifies the melted modeling material M. The three-dimensional structure ST may be formed. When the three-dimensional structure ST is formed without irradiating the processing light EL from the irradiation system 111 in this way, the modeling system 1 (particularly, the modeling head 11) does not have to include the irradiation system 111.
　上述した説明では、造形システム１が制御装置１４を備えている。しかしながら、造形システム１は制御装置１４を備えていなくてもよい。制御装置１４は、造形システム１の外部に設けられていてもよい。この場合、制御装置１４と造形システム１とは有線または無線の通信回線で接続されていてもよい。また、制御装置１４に代えて、造形システム１の動作手順を表す信号を予め記録した記録媒体を用いて造形システム１を動作させてもよい。また、制御装置１４の一部の機能を、別の部分（一例としてヘッド駆動系１２）が担うようにしてもよい。 In the above description, the modeling system 1 includes a control device 14. However, the modeling system 1 does not have to include the control device 14. The control device 14 may be provided outside the modeling system 1. In this case, the control device 14 and the modeling system 1 may be connected by a wired or wireless communication line. Further, instead of the control device 14, the modeling system 1 may be operated by using a recording medium in which a signal representing the operation procedure of the modeling system 1 is recorded in advance. Further, a part of the function of the control device 14 may be performed by another part (head drive system 12 as an example).
　尚、造形材料Ｍとして、その熱伝導率が、膜Ｃ１を構成する材料の熱伝導率よりもワークＷを構成する材料の熱伝導率に近い材料が用いられてもよい。例えば、炭素鋼Ｓ５０Ｃの熱伝導率は摂氏６００度において３５．３［Ｗ／（ｍ・Ｋ）］である。クロムモリブデン鋼ＳＣＭ４４０の熱伝導率は摂氏６００度において３６．１［Ｗ／（ｍ・Ｋ）］である。合金工具鋼ＳＫＤ１１の熱伝導率は摂氏５００度において２３．４［Ｗ／（ｍ・Ｋ）］である。オーステナイト系のステンレス鋼ＳＵＳ３１６の熱伝導率は１６．７［Ｗ／（ｍ・Ｋ）］である。フェライト系のステンレス鋼ＳＵＳ４３０の熱伝導率は摂氏１００度において２６．４［Ｗ／（ｍ・Ｋ）］である。マルテンサイト系のステンレス鋼ＳＵＳ４４０Ｃの熱伝導率は摂氏１００度において２４．３［Ｗ／（ｍ・Ｋ）］である。アルミナ９６の熱伝導率は１８［Ｗ／（ｍ・Ｋ）］である。アルミナ９９．５の熱伝導率は３３［Ｗ／（ｍ・Ｋ）］である。Ｃ／Ｃコンポジットの熱伝導率は３０～４０［Ｗ／（ｍ・Ｋ）］である。等方性黒鉛の熱伝導率は８０～１４０［Ｗ／（ｍ・Ｋ）］である。チタン鋼ＴＰ３４０の熱伝導率は１７．１［Ｗ／（ｍ・Ｋ）］である。対して、窒化チタンの熱伝導率は１９．２［Ｗ／（ｍ・Ｋ）］、炭化チタンの熱伝導率は２１［Ｗ／（ｍ・Ｋ）］、ホウ化チタンの熱伝導率は６４［Ｗ／（ｍ・Ｋ）］である。 As the modeling material M, a material whose thermal conductivity is closer to the thermal conductivity of the material constituting the work W than the thermal conductivity of the material constituting the film C1 may be used. For example, the thermal conductivity of carbon steel S50C is 35.3 [W / (m · K)] at 600 degrees Celsius. The thermal conductivity of the chromium molybdenum steel SCM440 is 36.1 [W / (m · K)] at 600 degrees Celsius. The thermal conductivity of the alloy tool steel SKD11 is 23.4 [W / (m · K)] at 500 degrees Celsius. The thermal conductivity of the austenitic stainless steel SUS316 is 16.7 [W / (m · K)]. The thermal conductivity of the ferritic stainless steel SUS430 is 26.4 [W / (m · K)] at 100 degrees Celsius. The thermal conductivity of martensitic stainless steel SUS440C is 24.3 [W / (m · K)] at 100 degrees Celsius. The thermal conductivity of alumina 96 is 18 [W / (m · K)]. The thermal conductivity of alumina 99.5 is 33 [W / (m · K)]. The thermal conductivity of the C / C composite is 30-40 [W / (m · K)]. The thermal conductivity of isotropic graphite is 80 to 140 [W / (m · K)]. The thermal conductivity of titanium steel TP340 is 17.1 [W / (m · K)]. On the other hand, the thermal conductivity of titanium nitride is 19.2 [W / (m · K)], the thermal conductivity of titanium carbide is 21 [W / (m · K)], and the thermal conductivity of titanium booxide is 64. [W / (m · K)].
　また、造形材料Ｍとして、その線熱膨張率が、膜Ｃ１を構成する材料の線熱膨張率よりもワークＷを構成する材料の線熱膨張率に近い材料が用いられてもよい。例えば、炭素鋼Ｓ５０Ｃの線熱膨張率は１１．７［１／Ｋ］、クロムモリブデン鋼ＳＣＭ４４０の線熱膨張率は１２．３×１０－６［１／Ｋ］、合金工具鋼ＳＫＤ１１の線熱膨張率は１１．７×１０－６［１／Ｋ］、オーステナイト系のステンレス鋼ＳＵＳ３１６の線熱膨張率は１５．９×１０－６［１／Ｋ］、フェライト系のステンレス鋼ＳＵＳ４３０の線熱膨張率は１２．４×１０－６［１／Ｋ］、マルテンサイト系のステンレス鋼ＳＵＳ４４０Ｃの線熱膨張率は１１．７×１０－６［１／Ｋ］、アルミナ９６の線熱膨張率は８．３×１０－６［１／Ｋ］、アルミナ９９．５の線熱膨張率は６．３×１０－６［１／Ｋ］、Ｃ／Ｃコンポジットの線熱膨張率は７～８×１０－６［１／Ｋ］、等方性黒鉛の線熱膨張率は４．５～５．９×１０－６［１／Ｋ］、
チタン鋼ＴＰ３４０の線熱膨張率は８．４×１０－６［１／Ｋ］である。対して、窒化チタン線熱膨張率は９．３５×１０－６［１／Ｋ］、炭化チタン線熱膨張率は８．６×１０－６［１／Ｋ］、ホウ化チタン線熱膨張率は７．８×１０－６［１／Ｋ］である。 Further, as the modeling material M, a material whose linear thermal expansion coefficient is closer to the linear thermal expansion coefficient of the material constituting the work W than the linear thermal expansion coefficient of the material constituting the film C1 may be used. For example, the coefficient of linear thermal expansion of carbon steel S50C is 11.7 [1 / K], the coefficient of linear thermal expansion of chromium molybdenum steel SCM440 is 12.3 × 10-6 [1 / K], and the coefficient of linear thermal expansion of alloy tool steel SKD11. The coefficient of thermal expansion is 11.7 × 10-6 [1 / K], the coefficient of linear thermal expansion of austenite-based stainless steel SUS316 is 15.9 × 10-6 [1 / K], and the coefficient of linear thermal expansion of ferrite-based stainless steel SUS430 is The coefficient of thermal expansion is 12.4 × 10-6 [1 / K], the coefficient of linear thermal expansion of martensite-based stainless steel SUS440C is 11.7 × 10-6 [1 / K], and the coefficient of linear thermal expansion of alumina 96 is 8.3 × 10-6 [1 / K], linear thermal expansion coefficient of alumina 99.5 is 6.3 × 10-6 [1 / K], linear thermal expansion coefficient of C / C composite is 7-8 × 10-6 [1 / K], the coefficient of linear thermal expansion of isotropic graphite is 4.5 to 5.9 × 10-6 [1 / K],
The coefficient of linear thermal expansion of titanium steel TP340 is 8.4 × 10-6 [1 / K]. On the other hand, the coefficient of thermal expansion of titanium nitride wire is 9.35 × 10-6 [1 / K], the coefficient of thermal expansion of titanium carbide wire is 8.6 × 10-6 [1 / K], and the coefficient of thermal expansion of titanium booxide wire. Is 7.8 × 10-6 [1 / K].
　上述の各実施形態の構成要件の少なくとも一部は、上述の各実施形態の構成要件の少なくとも他の一部と適宜組み合わせることができる。上述の各実施形態の構成要件のうちの一部が用いられなくてもよい。また、法令で許容される限りにおいて、上述の各実施形態で引用した全ての公開公報及び米国特許の開示を援用して本文の記載の一部とする。 At least a part of the constituent elements of each of the above-described embodiments can be appropriately combined with at least another part of the constituent requirements of each of the above-described embodiments. Some of the constituent requirements of each of the above embodiments may not be used. In addition, to the extent permitted by law, all publications cited in each of the above embodiments and disclosures of US patents shall be incorporated as part of the text.
　本発明は、上述した実施例に限られるものではなく、特許請求の範囲及び明細書全体から読み取れる発明の要旨或いは思想に反しない範囲で適宜変更可能であり、そのような変更を伴う造形システム及び造形方法もまた本発明の技術的範囲に含まれるものである。 The present invention is not limited to the above-described embodiment, and can be appropriately modified within the scope of claims and within the scope not contrary to the gist or idea of the invention that can be read from the entire specification. The modeling method is also included in the technical scope of the present invention.
　１　造形システム
　１１　造形ヘッド
　１１１　照射系
　１１２　材料ノズル
　１３　ステージ
　Ｗ　ワーク
　Ｍ　造形材料
　ＳＬ　構造層
　ＳＴ　３次元構造物
　Ｃ　膜
　ＥＬ　光
　ＥＡ　照射領域
　ＭＡ　供給領域
　ＭＰ　溶融池
　ＭＳ　造形面 1 Modeling system 11 Modeling head 111 Irradiation system 112 Material nozzle 13 Stage W work M Modeling material SL Structural layer ST 3D structure C film EL Light EA Irradiation area MA Supply area MP Melting pond MS Modeling surface

Claims (60)

  1. 　基材の表面に形成された膜にエネルギビームを照射することと、
    　前記エネルギビームの照射位置に前記膜の融点より融点が低い材料を供給することと
    　を含む
    　前記基材に造形物を形成する造形方法。     Irradiating the film formed on the surface of the base material with an energy beam and
    A modeling method for forming a modeled object on the substrate, which comprises supplying a material having a melting point lower than the melting point of the film to the irradiation position of the energy beam.
  2. 　前記造形物は、前記膜を部分的に突き抜けて前記基材と結合する
    　請求項１に記載の造形方法。     The modeling method according to claim 1, wherein the modeled object partially penetrates the film and is bonded to the substrate.
  3. 　前記造形物と前記基材との間に部分的に前記膜を残留させる
    　請求項１又は２に記載の造形方法。     The modeling method according to claim 1 or 2, wherein the film is partially left between the modeled object and the substrate.
  4. 　前記膜が残留している部分の少なくとも一部において、前記造形物と前記基材とが離れている
    　請求項３に記載の造形方法。     The modeling method according to claim 3, wherein the modeled object and the base material are separated from each other in at least a part of the portion where the film remains.
  5. 　前記造形物と前記基材とは部分的に離れている
    　請求項１から４のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 4, wherein the modeled object and the base material are partially separated from each other.
  6. 　前記造形物は、前記造形物が前記基材と結合している部分と異なる部分において、前記膜を介して前記基材と離れている
    　請求項１から５のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 5, wherein the modeled object is separated from the substrate through the film at a portion different from the portion where the modeled object is bonded to the substrate. ..
  7. 　前記造形物は、前記膜が除去された部分で前記基材と結合しており、前記膜が除去されていない部分で前記基材と離れている
    　請求項１から６のいずれか一項に記載の造形方法。     The object according to any one of claims 1 to 6, wherein the modeled object is bonded to the base material at a portion where the film has been removed and is separated from the base material at a portion where the film has not been removed. How to model.
  8. 　前記造形物と前記基材とが離れている部分の少なくとも一部に前記膜は残留している
    　請求項４から７のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 4 to 7, wherein the film remains in at least a part of a portion where the modeled object and the base material are separated from each other.
  9. 　前記基材上の所定領域に前記膜が形成され、
    　前記所定領域において、前記造形物が前記基材と結合している部分の面積の割合は、前記膜が残留する面積の割合よりも小さい
    　請求項１から８のいずれか一項に記載の造形方法。     The film is formed in a predetermined region on the substrate,
    The modeling method according to any one of claims 1 to 8, wherein the ratio of the area of the portion where the modeled object is bonded to the base material in the predetermined region is smaller than the ratio of the area where the film remains. ..
  10. 　前記エネルギビームの照射により前記基材に溶融池を形成するとともに前記造形物を形成する
    　請求項１から９のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 9, wherein a molten pool is formed on the base material by irradiation with the energy beam and the modeled object is formed.
  11. 　前記造形物は、複数の層で形成され、
    　前記複数層のうち前記基材上に形成される第１層は、前記基材に溶融池を形成するとともに、前記エネルギビームの照射位置に供給された前記材料を溶融することによって形成され、
    　前記第１層の一部は、前記基材上に残留する前記膜上に形成される
    　請求項１０に記載の造形方法。     The modeled object is formed of a plurality of layers.
    Of the plurality of layers, the first layer formed on the base material is formed by forming a molten pool in the base material and melting the material supplied to the irradiation position of the energy beam.
    The modeling method according to claim 10, wherein a part of the first layer is formed on the film remaining on the base material.
  12. 　前記第１層の表面に沿った方向のうち少なくとも１つの方向における前記第１層のサイズは、前記少なくとも１つの方向における前記基材に形成される前記溶融池のサイズよりも大きい
    　請求項１１に記載の造形方法。     11. The size of the first layer in at least one direction along the surface of the first layer is larger than the size of the molten pool formed on the substrate in the at least one direction. The modeling method described.
  13. 　前記膜の融点は、前記基材の融点よりも高い
    　請求項１から１２のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 12, wherein the melting point of the film is higher than the melting point of the base material.
  14. 　前記基材及び前記材料の少なくとも一方と前記膜との間の結合力は、前記造形物と前記基材との間の結合力よりも弱い
    　請求項１から１３のいずれか一項に記載の造形方法。     The modeling according to any one of claims 1 to 13, wherein the bonding force between the base material and at least one of the materials and the film is weaker than the bonding force between the modeled object and the substrate. Method.
  15. 　前記基材及び前記材料の少なくとも一方と前記膜との間の結合力は、前記材料と前記基材との間の結合力よりも弱い
    　請求項１から１４のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 14, wherein the bonding force between the base material and at least one of the materials and the film is weaker than the bonding force between the material and the base material. ..
  16. 　前記基材及び前記材料の少なくとも一方に対する前記膜の濡れ性は、前記造形物の前記基材に対する濡れ性よりも低い
    　請求項１から１５のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 15, wherein the wettability of the film to at least one of the substrate and the material is lower than the wettability of the model to the substrate.
  17. 　前記基材及び前記材料の少なくとも一方に対する前記膜の濡れ性は、前記材料の前記基材に対する濡れ性よりも低い
    　請求項１から１６のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 16, wherein the wettability of the film to at least one of the base material and the material is lower than the wettability of the material to the base material.
  18. 　前記膜の表面は、前記基材の表面よりも粗い
    　請求項１から１７のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 17, wherein the surface of the film is rougher than the surface of the base material.
  19. 　前記膜の表面は、粗面を含む
    　請求項１から１８のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 18, wherein the surface of the film includes a rough surface.
  20. 　前記膜の表面は、凹凸面を含む
    　請求項１から１９のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 19, wherein the surface of the film includes an uneven surface.
  21. 　前記造形物が形成された状態において、前記造形物のうち前記基材側を向いた面は、前記膜に対向する前記造形物の部分と前記基材とが結合した部分とを含む
    　請求項１から２０のいずれか一項に記載の造形方法。     In the state where the modeled object is formed, the surface of the modeled object facing the base material side includes a portion of the modeled object facing the film and a portion where the base material is bonded. The modeling method according to any one of 20 to 20.
  22. 　前記造形物が形成された状態において、前記造形物の下面と前記基材との間に部分的に前記膜が介在している
    　請求項１から２１のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 21, wherein the film is partially interposed between the lower surface of the modeled object and the base material in a state where the modeled object is formed.
  23. 　前記造形物が形成された状態において、前記膜と前記基材との境界面の面積は、前記造形物と前記基材との結合面の面積よりも大きい
    　請求項１から２２のいずれか一項に記載の造形方法。     Any one of claims 1 to 22 in which the area of the boundary surface between the film and the base material is larger than the area of the bonding surface between the modeled object and the base material in the state where the modeled object is formed. The modeling method described in.
  24. 　前記膜が形成された前記基材を準備することを含む
    　請求項１から２３のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 23, which comprises preparing the base material on which the film is formed.
  25. 　前記膜は、前記基材に対する表面処理によって形成される
    　請求項１から２４のいずれか一項に記載の造形方法。     The molding method according to any one of claims 1 to 24, wherein the film is formed by surface treatment on the base material.
  26. 　前記表面処理は、めっき処理、蒸着処理、スパッタリング処理、溶射処理及びリューブライト処理の少なくとも一つを含む
    　請求項２５に記載の造形方法。     The modeling method according to claim 25, wherein the surface treatment includes at least one of a plating treatment, a vapor deposition treatment, a sputtering treatment, a thermal spraying treatment, and a lubelite treatment.
  27. 　前記膜は、窒化チタン、ニッケル、クロム、チタン及びリン酸塩の少なくとも一つを含む
    　請求項１から２６のいずれか一項に記載の造形方法。     The molding method according to any one of claims 1 to 26, wherein the film contains at least one of titanium nitride, nickel, chromium, titanium and phosphate.
  28. 　前記基材は、炭素鋼、ステンレス及び鋼材の少なくとも一方を含む
    　請求項１から２７のいずれか一項に記載の造形方法。     The modeling method according to any one of claims 1 to 27, wherein the base material contains at least one of carbon steel, stainless steel, and a steel material.
  29. 　基材の表面に形成された膜にエネルギビームを照射する照射装置と、
    　前記エネルギビームの照射位置に前記膜の融点より融点が低い材料を供給する供給装置と、
    　前記照射装置と前記供給装置とを制御して、前記膜に前記エネルギビームを照射し且つ前記エネルギビームの照射位置に前記材料を供給して、前記基材に造形物を形成する制御装置と
    　を備える造形システム。     An irradiation device that irradiates a film formed on the surface of the base material with an energy beam,
    A supply device that supplies a material having a melting point lower than the melting point of the film to the irradiation position of the energy beam, and
    A control device that controls the irradiation device and the supply device to irradiate the film with the energy beam and supply the material to the irradiation position of the energy beam to form a modeled object on the base material. A modeling system to be equipped.
  30. 　前記制御装置は、前記照射装置と前記供給装置とを制御して、前記膜を部分的に突き抜けて前記基材と結合した前記造形物を形成する
    　請求項２９に記載の造形システム。     The modeling system according to claim 29, wherein the control device controls the irradiation device and the supply device to partially penetrate the film and form the modeled object bonded to the substrate.
  31. 　前記制御装置は、前記照射装置と前記供給装置とを制御して、前記造形物と前記基材との間に部分的に前記膜を残留させる
    　請求項２９又は３０のいずれか一項に記載の造形システム。     The control device according to any one of claims 29 or 30, wherein the control device controls the irradiation device and the supply device to partially leave the film between the modeled object and the base material. Modeling system.
  32. 　前記膜が残留している部分の少なくとも一部において、前記造形物と前記基材とが離れている
    　請求項３１に記載の造形システム。     The modeling system according to claim 31, wherein the modeled object and the base material are separated from each other in at least a part of the portion where the film remains.
  33. 　前記基材と前記造形物とは部分的に離れている
    　請求項２９から３２のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 32, wherein the base material and the modeled object are partially separated from each other.
  34. 　前記造形物が前記基材と結合している部分と異なる部分において、前記膜を介して前記基材と離れている前記造形物を形成する
    　請求項２９から３３のいずれか一項に記載の造形システム。     The modeling according to any one of claims 29 to 33, wherein the model is formed at a portion different from the portion where the model is bonded to the substrate and is separated from the substrate via the film. system.
  35. 　前記膜が除去された部分で前記基材と結合しており、前記膜が除去されていない部分で前記基材と離れている前記造形物を形成する
    　請求項２９から３４のいずれか一項に記載の造形方システム。     The aspect according to any one of claims 29 to 34, which forms the modeled object which is bonded to the base material at the portion where the film is removed and is separated from the base material at the portion where the film is not removed. The described modeling method system.
  36. 　前記造形物と前記基材とが離れている部分の少なくとも一部に前記膜は残留している
    　請求項２９から３５のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 35, wherein the film remains in at least a part of a portion where the modeled object and the base material are separated from each other.
  37. 　前記基材上の所定領域に前記膜を形成し、
    　前記所定領域において、前記造形物が前記基材と結合している部分の面積の割合を、前記膜が残留する面積の割合よりも小さくする
    　請求項２９から３６のいずれか一項に記載の造形システム。     The film is formed in a predetermined region on the substrate,
    The modeling according to any one of claims 29 to 36, wherein the ratio of the area of the portion where the modeled object is bonded to the base material in the predetermined region is smaller than the ratio of the area where the film remains. system.
  38. 　前記制御装置は、前記エネルギビームの照射により前記基材に溶融池を形成するとともに前記造形物を形成する
    　請求項２９から３７のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 37, wherein the control device forms a molten pool on the base material by irradiation with the energy beam and forms the modeled object.
  39. 　前記造形物は、複数の層で形成され、
    　前記制御装置は、前記基材に溶融池を形成するとともに、前記エネルギビームの照射位置に供給された前記材料を溶融して、前記複数層のうち第１層を前記基材上に形成し、
    　前記第１層の一部は、前記基材上に残留する前記膜上に形成される
    　請求項３８に記載の造形システム。     The modeled object is formed of a plurality of layers.
    The control device forms a molten pool on the base material and melts the material supplied to the irradiation position of the energy beam to form the first layer of the plurality of layers on the base material.
    The modeling system according to claim 38, wherein a part of the first layer is formed on the film remaining on the base material.
  40. 　前記制御装置は、前記第１層の表面に沿った方向のうち少なくとも１つの方向における前記第１層のサイズが、前記少なくとも１つの方向における前記溶融池のサイズよりも大きくなるように前記造形物を形成する
    　請求項３９に記載の造形システム。     The control device is such that the size of the first layer in at least one direction along the surface of the first layer is larger than the size of the molten pool in the at least one direction. 39. The modeling system according to claim 39.
  41. 　前記膜の融点は、前記基材の融点よりも高い
    　請求項２９から４１のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 41, wherein the melting point of the film is higher than the melting point of the base material.
  42. 　前記基材及び前記材料の少なくとも一方と前記膜との間の結合力は、前記造形物と前記基材との間の結合力よりも弱い
    　請求項２９から４２のいずれか一項に記載の造形システム。     The modeling according to any one of claims 29 to 42, wherein the bonding force between the base material and at least one of the materials and the film is weaker than the bonding force between the modeled object and the substrate. system.
  43. 　前記基材及び前記材料の少なくとも一方と前記膜との間の結合力は、前記材料と前記基材との間の結合力よりも弱い
    　請求項２９から４３のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 43, wherein the binding force between the base material and at least one of the materials and the film is weaker than the binding force between the material and the base material. ..
  44. 　前記基材及び前記材料の少なくとも一方に対する前記膜の濡れ性は、前記造形物の前記基材に対する濡れ性よりも低い
    　請求項２９から４４のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 44, wherein the wettability of the film to at least one of the substrate and the material is lower than the wettability of the model to the substrate.
  45. 　前記基材及び前記材料の少なくとも一方に対する前記膜の濡れ性は、前記材料の前記基材に対する濡れ性よりも低い
    　請求項２９から４５のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 45, wherein the wettability of the film to at least one of the base material and the material is lower than the wettability of the material to the base material.
  46. 　前記膜の表面は、前記基材の表面よりも粗い
    　請求項２９から４６のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 46, wherein the surface of the film is rougher than the surface of the base material.
  47. 　前記膜の表面は、粗面を含む
    　請求項２９から４７のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 47, wherein the surface of the film includes a rough surface.
  48. 　前記膜の表面は、凹凸面を含む
    　請求項２９から４８のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 48, wherein the surface of the film includes an uneven surface.
  49. 　前記造形物が形成された状態において、前記造形物のうち前記基材側を向いた面は、前記膜に対向する前記造形物の部分と前記基材とが結合した部分とを含む
    　請求項２９から４９のいずれか一項に記載の造形システム。     29. In the state where the modeled object is formed, the surface of the modeled object facing the base material side includes a portion of the modeled object facing the film and a portion where the base material is bonded. The modeling system according to any one of 49 to 49.
  50. 　前記造形物が形成された状態において、前記造形物の下面と前記基材との間に部分的に前記膜が介在している
    　請求項２９から５０のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 50, wherein the film is partially interposed between the lower surface of the modeled object and the base material in a state where the modeled object is formed.
  51. 　前記造形物が形成された状態において、前記膜と前記基材との境界面の面積は、前記造形物と前記基材との結合面の面積よりも大きい
    　請求項２９から５１のいずれか一項に記載の造形システム。     Any one of claims 29 to 51, wherein the area of the interface between the film and the base material is larger than the area of the bonding surface between the modeled object and the base material in the state where the modeled object is formed. The modeling system described in.
  52. 　前記膜は、前記基材に対する表面処理によって形成される
    　請求項２９から５２のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 52, wherein the film is formed by surface treatment on the substrate.
  53. 　前記表面処理は、めっき処理、蒸着処理、スパッタリング処理、溶射処理及びリューブライト処理の少なくとも一つを含む
    　請求項５３に記載の造形システム。     The modeling system according to claim 53, wherein the surface treatment includes at least one of a plating treatment, a vapor deposition treatment, a sputtering treatment, a thermal spraying treatment, and a lubelite treatment.
  54. 　前記膜は、窒化チタン、ニッケル、クロム、チタン及びリン酸塩の少なくとも一つを含む
    　請求項２９から５４のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 54, wherein the film contains at least one of titanium nitride, nickel, chromium, titanium and phosphate.
  55. 　前記基材は、炭素鋼、ステンレス及び鋼材の少なくとも一方を含む
    　請求項２９から５５のいずれか一項に記載の造形システム。     The modeling system according to any one of claims 29 to 55, wherein the base material contains at least one of carbon steel, stainless steel, and a steel material.
  56. 　材料を用いて造形物を形成する造形システムにおいて用いられる造形用土台であって、
    　基材と、
    　前記基材の表面に形成され、前記材料の融点より融点が高い膜と
    　を備え、
    　前記造形システムが有する、前記膜にエネルギビームを照射する照射装置と、前記エネルギビームの照射位置に前記材料を供給する供給装置とによって、前記造形物が形成される造形用土台。     It is a modeling base used in a modeling system that forms a modeled object using materials.
    With the base material
    A film formed on the surface of the base material and having a melting point higher than the melting point of the material is provided.
    A modeling base on which the modeled object is formed by an irradiation device that irradiates the film with an energy beam and a supply device that supplies the material to the irradiation position of the energy beam, which the modeling system has.
  57. 　前記膜は、前記基材に対する表面処理によって形成される
    　請求項５７に記載の造形用土台。     The modeling base according to claim 57, wherein the film is formed by surface treatment of the substrate.
  58. 　前記表面処理は、めっき処理、蒸着処理、スパッタリング処理、溶射処理及びリューブライト処理の少なくとも一つを含む
    　請求項５７又は５８に記載の造形用土台。     The modeling base according to claim 57 or 58, wherein the surface treatment includes at least one of a plating treatment, a vapor deposition treatment, a sputtering treatment, a thermal spraying treatment, and a lubelite treatment.
  59. 　前記膜は、窒化チタン、ニッケル、クロム、チタン及びリン酸塩の少なくとも一つを含む
    　請求項５７から５９のいずれか一項に記載の造形用土台。     The modeling base according to any one of claims 57 to 59, wherein the film contains at least one of titanium nitride, nickel, chromium, titanium and phosphate.
  60. 　前記基材は、炭素鋼、ステンレス及び鋼材の少なくとも一方を含む
    　請求項５７から６０のいずれか一項に記載の造形用土台。     The modeling base according to any one of claims 57 to 60, wherein the base material contains at least one of carbon steel, stainless steel, and a steel material.
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JPH032030A (en) * 1989-05-31 1991-01-08 Sony Corp Forming method of three dimensional shape
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JP2010196099A (en) * 2009-02-24 2010-09-09 Panasonic Electric Works Co Ltd Apparatus and method of producing three-dimensional shaped article
WO2015145844A1 (en) * 2014-03-28 2015-10-01 株式会社日立製作所 Laser powder lamination shaping device, laser powder lamination shaping method, and 3d lamination shaping device
JP2017043805A (en) * 2015-08-26 2017-03-02 セイコーエプソン株式会社 Three-dimensional forming apparatus, three-dimensional forming method and three-dimensional formed object
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JPH032030A (en) * 1989-05-31 1991-01-08 Sony Corp Forming method of three dimensional shape
JP2001152204A (en) * 1999-11-25 2001-06-05 Matsushita Electric Works Ltd Powder material for manufacturing three-dimensional molding, manufacturing method of three-dimensional molding, and three-dimensional molding
JP2010196099A (en) * 2009-02-24 2010-09-09 Panasonic Electric Works Co Ltd Apparatus and method of producing three-dimensional shaped article
WO2015145844A1 (en) * 2014-03-28 2015-10-01 株式会社日立製作所 Laser powder lamination shaping device, laser powder lamination shaping method, and 3d lamination shaping device
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