WO2020175839A1 - Semiconductor apparatus for detecting sensor signal and sensor system including same - Google Patents

Semiconductor apparatus for detecting sensor signal and sensor system including same Download PDF

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Publication number
WO2020175839A1
WO2020175839A1 PCT/KR2020/002145 KR2020002145W WO2020175839A1 WO 2020175839 A1 WO2020175839 A1 WO 2020175839A1 KR 2020002145 W KR2020002145 W KR 2020002145W WO 2020175839 A1 WO2020175839 A1 WO 2020175839A1
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signal
detection
circuit
detection signal
sensor
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PCT/KR2020/002145
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French (fr)
Korean (ko)
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김수환
조준수
양영태
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관악아날로그 주식회사
서울대학교산학협력단
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Publication of WO2020175839A1 publication Critical patent/WO2020175839A1/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R3/00—Circuits for transducers, loudspeakers or microphones
    • H04R3/005—Circuits for transducers, loudspeakers or microphones for combining the signals of two or more microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Definitions

  • the present invention relates to a semiconductor device that detects a sensor signal and a sensor system including the same. More specifically, it relates to a semiconductor device that determines the presence or absence of a sensor signal and reads the sensor signal accordingly, and to a sensor system including the same.
  • the sensor does not output a meaningful signal.
  • a detection circuit can be used to detect whether the sensor is outputting a meaningful signal.
  • Fig. 1 is a graph explaining the problem of a conventional detection circuit.
  • the conventional detection circuit is input by comparing the input signal (1 ratio to the threshold voltage (1 m))
  • the signal (1 is less than the threshold voltage (13 ⁇ 4), it has a low level, otherwise it outputs a detection signal (0£1) with a high level.
  • the level of the input signal (detection signal ⁇ £1) is unstable when the level of the input signal (1 vibrates while having a level similar to the threshold voltage (13 ⁇ 4)) is unstable, and as a result, the operation of the sensor system is abnormal. It may occur, and power consumption may increase rather than frequent switching.
  • This technology provides a semiconductor device that reliably detects a sensor signal and a sensor system including the same.
  • a semiconductor device detects an input signal according to the detection signal and reads a first signal generated to generate a read signal; and a detection signal according to the second signal generated by detecting the input signal. It includes a detection circuit that generates a detection circuit, wherein the read circuit is activated when the detection signal is activated and deactivated when the detection signal is deactivated.
  • the sensor system according to this embodiment detects an input signal according to the detection signal
  • a semiconductor device comprising a reading circuit for reading the generated first signal to generate a read signal; and a detection circuit for generating a detection signal according to the second signal generated by sensing the input signal, and a first signal by detecting the input signal Including a main sensor that outputs, 2020/175839 1»(:1 ⁇ 1 ⁇ 2020/002145
  • the readout circuit is activated when the detection signal is activated and deactivated when the detection signal is deactivated.
  • the semiconductor device reads the readout circuit in the absence of an input signal.
  • the semiconductor device can stably output a detection signal by adjusting the level of the threshold voltage according to the detection signal.
  • Fig. 1 is a graph showing a problem of a conventional detection circuit.
  • FIG. 2 is a block diagram showing a sensor system according to an embodiment of the present invention.
  • Figure 3 is a block diagram showing a sensor system according to another embodiment of the present invention.
  • Figure 4 is a block diagram showing a detection circuit according to an embodiment of the present invention.
  • Figure 5 is a graph showing the operation of the detection circuit of the present invention.
  • the input signal is sound and the sensor detects the sound.
  • FIG. 2 is a block diagram showing a sensor system 1000 according to an embodiment of the present invention.
  • the sensor system 1000 is a semiconductor device 1 that reads the first signal and outputs a read signal 017 and a read signal 017 that is output from the semiconductor device 1 It includes a signal processing circuit (300).
  • the semiconductor device (1) detects the presence or absence of sound from the second signal (IN2).
  • It includes a detection circuit 100 to detect and a read circuit 200 that reads the first signal ( ⁇ 1) and outputs a read signal (0171).
  • the present embodiment uses two sensors and includes a main sensor 10 for converting a sound signal to a first signal 1) and a detection sensor 20 for converting a sound signal to a second signal IN2. .
  • the detection circuit 100 detects the presence of sound from the second signal IN2.
  • the detection sensor 20 and the detection circuit 100 maintain an active state and detect the presence or absence of sound.
  • the reading circuit 200 and the signal processing circuit 300 are identical to each other.
  • the main sensor 10 is supplied with power from the readout circuit 200
  • the main sensor 10 maintains an inactive state together with the readout circuit 200.
  • the main sensor 10 is an embodiment that receives power from a separate power source other than the reading circuit 200, the separate power source determines whether the main sensor 10 is activated or not by determining the power supply according to the detection signal. can do.
  • the signal processing circuit 300 performs a signal processing operation on the read signal output from the read circuit 200.
  • the read circuit 200 may include an analog-to-digital converter and output a read signal in digital form.
  • the readout circuit (200) is deactivated and detects when the detection signal ⁇ £1) is deactivated. When activated, it receives power and can perform normal operation.
  • the readout circuit 200 may be implemented using conventional techniques.
  • the readout circuit 200 may include, for example, an analog-to-digital converter including a sigma delta modulator, and the readout signal (0171) is an analogue converter. It may be a digital signal output from a digital converter.
  • the signal processing circuit 300 It can be implemented using the same conventional technology.
  • the main sensor 10 can be used to convert the sound as the input signal into the first signal 1), which is excellent in performance.
  • the detection sensor 20 since the detection sensor 20 is always turned on, it is preferable that the power consumption is low.
  • the detection sensor 20 is sufficient when determining the presence or absence of sound, and thus a high level of performance as the main sensor 10 There is no need to have.
  • the main sensor 10 and the detection sensor 20 are MEMS microphone.
  • capacitor type There are two types of microphones: capacitor type and piezo type.
  • the capacitor-type microphone has excellent performance, but
  • the piezo-type microphone has a slightly inferior performance compared to the capacitor-type microphone, but there is little power consumption to drive the microphone because there is no need to receive a bias current from the outside.
  • a capacitor-type microphone is used as the main sensor 10 and a piezo-type microphone is used as the detection sensor 20 to reduce power consumption during the detection operation.
  • the main sensor 10 receives a bias current from the semiconductor device 1
  • the main sensor 10 is turned on or off together with the read circuit 200 2020/175839 1»(:1 ⁇ 1 ⁇ 2020/002145
  • the main sensor 10 can receive the bias current from the readout circuit 200.
  • FIG. 3 is a diagram showing a sensor system 1001 according to another embodiment of the present invention.
  • FIG. 3 is different from the embodiment 2 in that the detection sensor 20 is not used and only the main sensor 10 is used.
  • the first signal IN1 output from the main sensor 10 is detected.
  • the main sensor 10 should always maintain the turn-on state.
  • the main sensor (10) is piezo-type, it does not require bias current.
  • the semiconductor device 1 can provide a bias current to the main sensor 10.
  • the bias current is preferably provided by the detection circuit 100 or a separate bias providing circuit.
  • FIG. 4 is a block diagram showing the detection circuit 100 according to an embodiment of the present invention
  • FIG. 5 is a graph showing the operation of the detection circuit 100.
  • the main sensor 10 may provide a differential (differential) or single end (single end), but in the present embodiment, it is assumed to provide a single-ended output.
  • the detection circuit 100 includes a differential signal generator 110, an amplifier 120, an envelope detection circuit 130, a comparator 140, and a threshold voltage control circuit 150.
  • the second signal IN2 is a signal associated with the loudness of the sound, and in this embodiment, it is assumed to have a sine wave shape.
  • the differential signal generator 110 converts the second signal (IN2) into a differential signal (SDOP, SDON).
  • SDOP Differential signals
  • SDON are signals of the same size and 180 degrees of phase difference.
  • the amplifier 120 amplifies the differential signals (SDOP, SDON) and outputs the amplified signals (AOP, AON).
  • the envelope detector 130 detects the peak of the amplified signal (AOP, AON).
  • the envelope signal ENV rises to the high point T1 of the amplification signal AOP, and then gradually decreases. Then, according to the rise of the amplification signal AON, it starts to rise from T2 and starts to rise from the high point T3. ) To rise together.
  • the envelope signal (ENV) begins to gradually decrease again, and according to the rise of the amplification signal (AOP), it starts to rise from T4 and rises together to the high point (T5).
  • the comparator 140 compares and detects the envelope signal (ENV) and the threshold voltage (TH).
  • the signal (DET) is output. 2020/175839 1»(:1/10 ⁇ 020/002145
  • Detection signal £1' has a high level when the envelope signal (ENV) is greater than the threshold voltage (13 ⁇ 4), and has a low level when the envelope signal (ENV) is less than the threshold voltage (1 m).
  • the threshold voltage control circuit 150 adjusts and outputs the size of the threshold voltage (13 ⁇ 4) according to the detection signal ⁇ £1').
  • the threshold voltage control circuit 150 includes the reference voltage generation circuit 151 and
  • the reference voltage generation circuit 150 generates a first reference voltage (1) and a second reference voltage (1 ⁇ 2) smaller than the first reference voltage (1 ⁇ 1).
  • the first reference voltage (1 ⁇ 1: 1) has a value less than the value of the envelope signal (ENV) in II
  • the second reference voltage (1 ⁇ 2) has a value greater than the value of the envelope signal (ENV) in 12.
  • the selection unit 152 selects the second reference voltage 2) when the detection signal) is activated.
  • the threshold voltage (!3 ⁇ 4) is output and the detection signal ⁇ £1) is deactivated, the first reference voltage (1 ⁇ ) is output as the threshold voltage (13 ⁇ 4).
  • the detection signal has a horizontal right level, and in this case, the threshold voltage (!3 ⁇ 4) becomes the first reference voltage (at 1).
  • the post-acid detection signal £') in which the size of the envelope signal (ENV) becomes larger than the first reference voltage (1 ⁇ ) is converted to a high level.
  • the threshold voltage (1 mu) is adjusted to the second reference voltage (1 ⁇ me2). Accordingly, after ⁇ when the size of the envelope signal ENV becomes smaller than the second reference voltage (1 ⁇ ), the detection signal is converted to a low level.
  • the level of the threshold voltage (1 seed) is adjusted to the first reference voltage (1 ⁇ 1).
  • the detection signal £1') after 3 when the size of the envelope signal ENV becomes greater than the first reference voltage (1 ⁇ ) is converted to a high level.
  • the detection circuit 100 is based on the detection signal £').

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Otolaryngology (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

A semiconductor apparatus according to the present technology comprises: a readout circuit for reading a first signal generated by detecting an input signal according to a detection signal, to generate a readout signal; and a detection circuit for generating the detection signal according to a second signal generated by detecting the input signal, wherein the readout circuit is activated when the detection signal is activated, and is deactivated when the detection signal deactivated.

Description

2020/175839 1»（：1^1{2020/002145 명세서 2020/175839 1»（：1^1{2020/002145 specification
발명의 명칭:센서신호를탐지하는반도체장치및이를포함하는 센서시스템 Title of Invention: Semiconductor device for detecting sensor signals and sensor system including the same
기술분야 Technical field
[1] 본발명은센서신호를탐지하는반도체장치 및 이를포함하는센서시스템에 관한것으로보다구체적으로는센서신호의유무를판단하고이에 따라센서 신호를읽는반도체장치 및 이를포함하는센서시스템에 관한것이다. [1] The present invention relates to a semiconductor device that detects a sensor signal and a sensor system including the same. More specifically, it relates to a semiconductor device that determines the presence or absence of a sensor signal and reads the sensor signal accordingly, and to a sensor system including the same.
배경기술 Background
[2] 멤스마이크와같은센서에서출력되는신호를판독하기위한반도체장치가 널리사용되고있다. [2] Semiconductor devices such as MEMS microphones are widely used to read signals output from sensors.
[3] 반도체장치를항상동작시키면센서가유의미한신호를출력하지 않는 [3] If the semiconductor device is always operated, the sensor does not output a meaningful signal.
동안에도소모되는전력이증가하여 전력 효율이 떨어지는문제가있다. There is a problem in that the power consumption increases during the period and the power efficiency decreases.
[4] 이에따라탐지회로를이용하여 센서가유의미한신호를출력하는지탐지할 수있다. [4] Accordingly, a detection circuit can be used to detect whether the sensor is outputting a meaningful signal.
[5] 도 1은종래의탐지 회로의문제를설명하는그래프이다. [5] Fig. 1 is a graph explaining the problem of a conventional detection circuit.
[6] 종래의탐지 회로는입력신호 (1비를문턱전압 (1묘)과비교하여 입력 [6] The conventional detection circuit is input by comparing the input signal (1 ratio to the threshold voltage (1 m))
신호 (1 가문턱전압 (1¾)보다작으면로우레벨을가지고그렇지 않으면하이 레벨을갖는탐지신호 (0£1)를출력한다. If the signal (1 is less than the threshold voltage (1¾), it has a low level, otherwise it outputs a detection signal (0£1) with a high level.
[7] 그러나입력신호 (1 가문턱전압 (1¾)과유사한수준을가지면서 진동하는 경우탐지신호 ^£1)의 레벨이불안정하여 센서의상태를특정할수없게되고 그결과센서시스템의동작에 이상이발생할수있으며 잦은스위칭으로오히려 소비 전력이증가할수도있다. [7] However, the level of the input signal (detection signal ^£1) is unstable when the level of the input signal (1 vibrates while having a level similar to the threshold voltage (1¾)) is unstable, and as a result, the operation of the sensor system is abnormal. It may occur, and power consumption may increase rather than frequent switching.
발명의상세한설명 Detailed description of the invention
기술적과제 Technical task
[8] 본기술은센서신호를안정적으로탐지하는반도체장치 및이를포함하는 센서시스템을제공한다. [8] This technology provides a semiconductor device that reliably detects a sensor signal and a sensor system including the same.
과제해결수단 Problem solving means
[9] 본기술에 의한반도체장치는탐지신호에따라입력신호를감지하여 생성된 제 1신호를판독하여판독신호를생성하는판독회로;및입력신호를감지하여 생성된제 2신호에따라탐지신호를생성하는탐지 회로를포함하되,판독 회로는탐지신호가활성화된경우에 활성화되고탐지신호가비활성화된경우 비활성화된다. [9] A semiconductor device according to the present technology detects an input signal according to the detection signal and reads a first signal generated to generate a read signal; and a detection signal according to the second signal generated by detecting the input signal. It includes a detection circuit that generates a detection circuit, wherein the read circuit is activated when the detection signal is activated and deactivated when the detection signal is deactivated.
[1이 본실시예에 의한센서시스템은탐지신호에따라입력신호를감지하여 [1] The sensor system according to this embodiment detects an input signal according to the detection signal
생성된제 1신호를판독하여판독신호를생성하는판독회로;및 입력신호를 감지하여 생성된제 2신호에 따라탐지신호를생성하는탐지회로를포함하는 반도체장치 및 입력신호를감지하여제 1신호를출력하는주센서를포함하되, 2020/175839 1»（：1^1{2020/002145 A semiconductor device comprising a reading circuit for reading the generated first signal to generate a read signal; and a detection circuit for generating a detection signal according to the second signal generated by sensing the input signal, and a first signal by detecting the input signal Including a main sensor that outputs, 2020/175839 1»（：1^1{2020/002145
2 판독회로는탐지신호가활성화된경우에활성화되고탐지신호가비활성화된 경우비활성화된다. 2 The readout circuit is activated when the detection signal is activated and deactivated when the detection signal is deactivated.
발명의효과 Effects of the Invention
[11] 본기술에의한반도체장치는입력신호가없는상태에서판독회로를 [11] The semiconductor device according to this technology reads the readout circuit in the absence of an input signal.
비활성화시켜소비전력을줄일수있다. It can be disabled to reduce power consumption.
[12] 본기술에의한반도체장치는탐지신호에따라문턱전압의레벨을조절하여 탐지신호를안정적으로출력할수있다. [12] The semiconductor device according to the present technology can stably output a detection signal by adjusting the level of the threshold voltage according to the detection signal.
도면의간단한설명 Brief description of the drawing
[13] 도 1은종래의탐지회로의문제를나타내는그래프. [13] Fig. 1 is a graph showing a problem of a conventional detection circuit.
[14] 도 2는본발명의일실시예에의한센서시스템을나타내는블록도. [14] Figure 2 is a block diagram showing a sensor system according to an embodiment of the present invention.
[15] 도 3은본발명의다른실시예에의한센서시스템을나타내는블록도. [15] Figure 3 is a block diagram showing a sensor system according to another embodiment of the present invention.
[16] 도 4는본발명의일실시예에의한탐지회로를나타내는블록도. [16] Figure 4 is a block diagram showing a detection circuit according to an embodiment of the present invention.
[17] 도 5는본발명의탐지회로의동작을나타내는그래프. [17] Figure 5 is a graph showing the operation of the detection circuit of the present invention.
발명의실시를위한형태 Modes for the implementation of the invention
[18] 이하에서는첨부한도면을참조하여본발명의실시예를개시한다. [18] Hereinafter, embodiments of the present invention will be disclosed with reference to the accompanying drawings.
[19] 이하의개시에서는입력신호가소리이고센서가소리를감지하는멤스 [19] In the following starts, the input signal is sound and the sensor detects the sound.
마이크인것으로가정하나입력신호의종류와센서의종류가반드시이에 한정되는것은아니다. It is assumed to be a microphone, but the types of input signals and types of sensors are not necessarily limited to this.
[2이 도 2는본발명의일실시예에의한센서시스템 (1000)을나타내는블록도이다. [2] Fig. 2 is a block diagram showing a sensor system 1000 according to an embodiment of the present invention.
[21] 본실시예에서센서시스템 (1000)은제 1신호 (別1)를읽어판독신호 (0171)를 출력하는반도체장치 (1)와반도체장치 (1)에서출력되는판독신호 (017 를 처리하는신호처리회로 (300)를포함한다. [21] In this embodiment, the sensor system 1000 is a semiconductor device 1 that reads the first signal and outputs a read signal 017 and a read signal 017 that is output from the semiconductor device 1 It includes a signal processing circuit (300).
[22] 보다구체적으로반도체장치 (1)는제 2신호 (IN2)로부터소리의유무를 [22] More specifically, the semiconductor device (1) detects the presence or absence of sound from the second signal (IN2).
탐지하는탐지회로 (100)와제 1신호 (別1)를읽어판독신호 (0171)를출력하는 판독회로 (200)를포함한다. It includes a detection circuit 100 to detect and a read circuit 200 that reads the first signal (別1) and outputs a read signal (0171).
[23] 본실시예는두개의센서를사용하며소리신호를제 1신호 1)로변환하는 주센서 (10)와소리신호를제 2신호 (IN2)로변환하는탐지센서 (20)를포함한다. [23] The present embodiment uses two sensors and includes a main sensor 10 for converting a sound signal to a first signal 1) and a detection sensor 20 for converting a sound signal to a second signal IN2. .
[24] 탐지회로 (100)는제 2신호 (IN2)로부터소리의유무를판단하여탐지 [24] The detection circuit 100 detects the presence of sound from the second signal IN2.
신호 (0£1)를출력하는데소리가존재하는것으로판단하는경우탐지 Detect when outputting a signal (0£1) and determining that sound is present
신호 £1')를활성화하고그렇지않은경우를탐지신호必£1')를비활성화한다. Activating signal £1') and deactivating the detection signal 必£1') if not.
[25] 탐지신호 £1')가활성화된경우를
Figure imgf000003_0001
비활성화된 경우를비활성
Figure imgf000003_0002
MODE)로지칭할수있다. [25] When the detection signal £1') is activated
Figure imgf000003_0001
Inactive when disabled
Figure imgf000003_0002
MODE).
[26] 본실시예서탐지센서 (20)와탐지회로 (100)는활성화상태를유지하며소리의 유무를탐지한다. In the present embodiment, the detection sensor 20 and the detection circuit 100 maintain an active state and detect the presence or absence of sound.
[27] 본실시예에서판독회로 (200),신호처리회로 (300)는비활성모드에서는 [27] In this embodiment, the reading circuit 200 and the signal processing circuit 300 are
저전력상태또는턴오프상태등의비활성상태를유지하다가활성모드가된 이후활성화되어정상동작을수행한다. 2020/175839 1»（：1^1{2020/002145 It maintains an inactive state such as a low power state or a turn-off state, and is activated after entering the active mode to perform normal operation. 2020/175839 1»（：1^1{2020/002145
3 3
[28] 본실시예에서주센서 (10)는판독회로 (200)로부터 전력을공급받으며 [28] In this embodiment, the main sensor 10 is supplied with power from the readout circuit 200
이에따라주센서 (10)는판독회로 (200)와함께비활성상태를유지한다. Accordingly, the main sensor 10 maintains an inactive state together with the readout circuit 200.
[29] 주센서 (10)가판독회로 (200)가아닌별도의 전원으로부터 전력을공급받는 실시예라면별도의 전원은탐지신호 에따라전력공급을결정하여주 센서 (10)의활성화여부를제어할수있다. [29] If the main sensor 10 is an embodiment that receives power from a separate power source other than the reading circuit 200, the separate power source determines whether the main sensor 10 is activated or not by determining the power supply according to the detection signal. can do.
[3이 신호처리 회로 (300)는판독회로 (200)에서출력되는판독신호 (0171)에 대해서 신호처리동작을수행한다. [3] The signal processing circuit 300 performs a signal processing operation on the read signal output from the read circuit 200.
[31] 본실시예에서판독회로 (200)는아날로그디지털변환기를포함하여디지털 형태의판독신호 (0171)를출력할수있다. In the present embodiment, the read circuit 200 may include an analog-to-digital converter and output a read signal in digital form.
[32] 판독회로 (200)는탐지신호 ^£1)가비활성화된경우에비활성상태가되고 탐지
Figure imgf000004_0001
활성화된경우에 전력을공급받아정상동작을수행할수 있다. [32] The readout circuit (200) is deactivated and detects when the detection signal ^£1) is deactivated.
Figure imgf000004_0001
When activated, it receives power and can perform normal operation.
[33] 이를제외하고판독회로 (200)는종래의 기술을사용하여구현될수있다.판독 회로 (200)는예를들어시그마델타변조기를포함하는아날로그디지털 변환기를포함할수있으며판독신호 (0171)는아날로그디지털변환기에서 출력되는디지털신호일수있다.
Figure imgf000004_0002
[33] Apart from this, the readout circuit 200 may be implemented using conventional techniques. The readout circuit 200 may include, for example, an analog-to-digital converter including a sigma delta modulator, and the readout signal (0171) is an analogue converter. It may be a digital signal output from a digital converter.
Figure imgf000004_0002
동작을수행할수있다. You can perform the operation.
[35] 신호처리 회로 (300)는
Figure imgf000004_0003
같은종래의 기술을사용하여구현될수있다. [35] The signal processing circuit 300
Figure imgf000004_0003
It can be implemented using the same conventional technology.
[36] 본실시예에서주센서 (10)는입력신호인소리를제 1신호 1)로변환하는데 성능이상대적으로우수한것을사용할수있다. [36] In this embodiment, the main sensor 10 can be used to convert the sound as the input signal into the first signal 1), which is excellent in performance.
[37] 본실시예에서 탐지 센서 (20)는항상턴온되어 있으므로소비 전력이낮은것이 바람직하다.탐지 센서 (20)는소리의유무를판단하면충분하므로주센서 (10)와 같이높은수준의성능을가질필요는없다. [37] In the present embodiment, since the detection sensor 20 is always turned on, it is preferable that the power consumption is low. The detection sensor 20 is sufficient when determining the presence or absence of sound, and thus a high level of performance as the main sensor 10 There is no need to have.
[38] 본실시예에서주센서 (10)와탐지 센서 (20)는멤스마이크인데멤스 [38] In the present embodiment, the main sensor 10 and the detection sensor 20 are MEMS microphone.
마이크에는커패시터방식과피에조방식이 있다. There are two types of microphones: capacitor type and piezo type.
[39] 커패시터방식의마이크는성능이우수하지만외부에서 바이어스전류를 [39] The capacitor-type microphone has excellent performance, but
제공받아동작하므로구동시 전력소모가큰편이다. As it operates by being provided, power consumption is large when driving.
[4이 이에비하여 피에조방식의마이크는커패시터 방식의마이크에 비하여성능은 다소떨어지나외부에서 바이어스전류를제공받을필요가없어마이크를 구동하는데전력소모가거의 없다. [4] Compared to this, the piezo-type microphone has a slightly inferior performance compared to the capacitor-type microphone, but there is little power consumption to drive the microphone because there is no need to receive a bias current from the outside.
[41] 본실시예에서는주센서 (10)로서커패시터 방식의마이크를사용하고탐지 센서 (20)로서피에조방식의마이크를사용하여탐지동작시소비 전력을줄일 수있다. In this embodiment, a capacitor-type microphone is used as the main sensor 10 and a piezo-type microphone is used as the detection sensor 20 to reduce power consumption during the detection operation.
[42] 본실시예에서주센서 (10)는반도체장치 (1)로부터바이어스전류를 [42] In this embodiment, the main sensor 10 receives a bias current from the semiconductor device 1
제공받는다. It is provided.
[43] 본실시예에서주센서 (10)는판독회로 (200)와함께 턴온되거나턴오프되므로 2020/175839 1»（：1^1{2020/002145 [43] In this embodiment, the main sensor 10 is turned on or off together with the read circuit 200 2020/175839 1»（：1^1{2020/002145
4 주센서 (10)는바이어스전류를판독회로 (200)에서 제공받을수있다. 4 The main sensor 10 can receive the bias current from the readout circuit 200.
[44] 도 3은본발명의다른실시예에 의한센서시스템 (1001)을나타내는 3 is a diagram showing a sensor system 1001 according to another embodiment of the present invention.
블록도이다. It is a block diagram.
[45] 도 3의실시예에서는탐지 센서 (20)를사용하지 않고주센서 (10)만을사용하는 점에서도 2의실시예와상이하다. The embodiment of FIG. 3 is different from the embodiment 2 in that the detection sensor 20 is not used and only the main sensor 10 is used.
[46] 도 3의실시예에서주센서 (10)에서출력되는제 1신호 (IN1)는탐지 In the embodiment of FIG. 3, the first signal IN1 output from the main sensor 10 is detected.
회로 (100)에제 2신호 (IN2)로서제공된다. It is provided to the circuit 100 as a second signal IN2.
[47] 도 3의실시예에서주센서 (10)는항상턴온상태를유지해야한다. In the embodiment of Fig. 3, the main sensor 10 should always maintain the turn-on state.
[48] 주센서 (10)가피에조방식인경우에는바이어스전류를제공받지 않아도 [48] If the main sensor (10) is piezo-type, it does not require bias current.
동작이 가능하지만주센서 (10)가커패시터방식인경우바이어스전류를 제공받아야한다. Operation is possible, but when the main sensor 10 is a capacitor type, it must receive a bias current.
[49] 이때반도체장치 (1)는바이어스전류를주센서 (10)에 제공할수있다. [49] At this time, the semiconductor device 1 can provide a bias current to the main sensor 10.
[5이 판독회로 (200)는탐지신호 (DET)가활성화된경우에동작하므로바이어스 전류는탐지회로 (100)에서제공되거나별도의바이어스제공회로에서 제공되는것이바람직하다. [5] Since this readout circuit 200 operates when the detection signal DET is activated, the bias current is preferably provided by the detection circuit 100 or a separate bias providing circuit.
[51] 도 4는본발명의 일실시예에 의한탐지 회로 (100)를나타내는블록도이고도 5는탐지회로 (100)의동작을나타내는그래프이다. 4 is a block diagram showing the detection circuit 100 according to an embodiment of the present invention, and FIG. 5 is a graph showing the operation of the detection circuit 100.
[52] 주센서 (10)는차동 (differential)줄력또는단일종단 (single end)줄력을제공할 수있으나본실시예에서는단일종단출력을제공하는것으로가정한다. [52] The main sensor 10 may provide a differential (differential) or single end (single end), but in the present embodiment, it is assumed to provide a single-ended output.
[53] 본실시예에 의한탐지 회로 (100)는차동신호생성기 (110),증폭기 (120),포락선 탐지회로 (130),비교기 (140)및문턱전압조절회로 (150)를포함한다. The detection circuit 100 according to the present embodiment includes a differential signal generator 110, an amplifier 120, an envelope detection circuit 130, a comparator 140, and a threshold voltage control circuit 150.
[54] 제 2신호 (IN2)는소리의크기와연관된신호로서본실시예에서는사인파 형태를갖는것으로가정한다. The second signal IN2 is a signal associated with the loudness of the sound, and in this embodiment, it is assumed to have a sine wave shape.
[55] 차동신호생성기 (110)는제 2신호 (IN2)를차동신호 (SDOP, SDON)로 [55] The differential signal generator 110 converts the second signal (IN2) into a differential signal (SDOP, SDON).
변환한다. Convert.
[56] 차동신호 (SDOP, SDON)는크기는같고위상차는 180도인신호이다. [56] Differential signals (SDOP, SDON) are signals of the same size and 180 degrees of phase difference.
[57] 증폭기 (120)는차동신호 (SDOP, SDON)를증폭하여증폭신호 (AOP, AON)를 출력한다. [57] The amplifier 120 amplifies the differential signals (SDOP, SDON) and outputs the amplified signals (AOP, AON).
[58] 포락선탐지기 (130)는증폭신호 (AOP, AON)의피크를탐지하는포락선 [58] The envelope detector 130 detects the peak of the amplified signal (AOP, AON).
신호 (ENV)를출력하는회로로서그구성은종래에도잘알려진바있다. As a circuit that outputs a signal (ENV), its configuration has been well known in the past.
[59] 본실시예에서포락선신호 (ENV)는증폭신호 (AOP)의고점 (T1)까지상승한후 점차감소한다.이후증폭신호 (AON)의상승에따라 T2부터상승하기시작하여 그고점 (T3)까지함께상승한다. [59] In this embodiment, the envelope signal ENV rises to the high point T1 of the amplification signal AOP, and then gradually decreases. Then, according to the rise of the amplification signal AON, it starts to rise from T2 and starts to rise from the high point T3. ) To rise together.
[6이 이후포락선신호 (ENV)는다시 점차감소하기시작하고증폭신호 (AOP)의 상승에 따라 T4부터상승하기시작하여그고점 (T5)까지함께상승한다. [After 6, the envelope signal (ENV) begins to gradually decrease again, and according to the rise of the amplification signal (AOP), it starts to rise from T4 and rises together to the high point (T5).
[61] 이후동일한동작이반복된다. [61] After that, the same operation is repeated.
[62] 비교기 (140)는포락선신호 (ENV)와문턱전압 (TH)을비교하여탐지 [62] The comparator 140 compares and detects the envelope signal (ENV) and the threshold voltage (TH).
신호 (DET)를출력한다. 2020/175839 1»（：1/10公020/002145 The signal (DET) is output. 2020/175839 1»（：1/10公020/002145
5 탐지신호 £1')는포락선신호 (ENV)가문턱전압 (1¾)보다큰경우하이 레벨을가지고포락선신호 (ENV)가문턱전압 (1묘)보다작은경우로우레벨을 가진다. 5 Detection signal £1') has a high level when the envelope signal (ENV) is greater than the threshold voltage (1¾), and has a low level when the envelope signal (ENV) is less than the threshold voltage (1 m).
[64] 문턱전압조절회로 (150)는탐지신호必£1')에따라문턱전압 (1¾)의크기를 조절하여출력한다. [64] The threshold voltage control circuit 150 adjusts and outputs the size of the threshold voltage (1¾) according to the detection signal 必£1').
[65] 본실시예에서문턱전압조절회로 (150)는기준전압생성회로 (151)와 [65] In this embodiment, the threshold voltage control circuit 150 includes the reference voltage generation circuit 151 and
선택부 (152)를포함한다. It includes a selection section 152.
[66] 기준전압생성회로 (150)는제 1기준전압 (1 )과제 1기준전압 (1犯므1)보다 작은제 2기준전압 (1 므2)을생성한다. [66] The reference voltage generation circuit 150 generates a first reference voltage (1) and a second reference voltage (1 µ2) smaller than the first reference voltage (1 犯 1).
[67] 제 1기준전압 (1^1: 1)은 II에서포락선신호 (ENV)의값보다작은값을가지고 제 2기준전압 (1 므2)은 12에서포락선신호 (ENV)의값보다큰값을가진다. [67] The first reference voltage (1^1: 1) has a value less than the value of the envelope signal (ENV) in II, and the second reference voltage (1 鈥2) has a value greater than the value of the envelope signal (ENV) in 12. .
[68] 선택부 (152)는탐지신호 )가활성화된경우제 2기준전압 2)을 [68] The selection unit 152 selects the second reference voltage 2) when the detection signal) is activated.
문턱전압 (!¾)으로출력하고탐지신호 ^£1)가비활성화된경우제 1기준 전압 (1犯 )을문턱전압 (1¾)으로출력한다. When the threshold voltage (!¾) is output and the detection signal ^£1) is deactivated, the first reference voltage (1犯) is output as the threshold voltage (1¾).
도 5의그래프에서산까지는탐지신호 가로우레벨을가지며이경우 문턱전압 (!¾)은제 1기준전압 (1에 )이된다. From the graph of FIG. 5 to the mountain, the detection signal has a horizontal right level, and in this case, the threshold voltage (!¾) becomes the first reference voltage (at 1).
[70] 이에따라포락선신호 (ENV)의크기가제 1기준전압 (1^ )보다커지는 산이후탐지신호 £1')는하이레벨로전환된다. [70] Accordingly, the post-acid detection signal £1') in which the size of the envelope signal (ENV) becomes larger than the first reference voltage (1^) is converted to a high level.
이때문턱전압 (1묘)은제 2기준전압 (1^므2)으로레벨이조절된다. 이에따라포락선신호 (ENV)의크기가제 2기준전압 (1^ )보다작아지는 ^ 이후탐지신호 는로우레벨로전환된다. At this time, the threshold voltage (1 mu) is adjusted to the second reference voltage (1^me2). Accordingly, after ^ when the size of the envelope signal ENV becomes smaller than the second reference voltage (1^), the detection signal is converted to a low level.
[73] 이때문턱전압 (1묘)은제 1기준전압 (1犯1 )으로레벨이조절된다. [73] At this time, the level of the threshold voltage (1 seed) is adjusted to the first reference voltage (1犯1).
이에따라포락선신호 (ENV)의크기가제 1기준전압 (1^ )보다커지는 3 이후탐지신호 £1')는하이레벨로전환된다. Accordingly, the detection signal £1') after 3 when the size of the envelope signal ENV becomes greater than the first reference voltage (1^) is converted to a high level.
2 1 2 1
[77 77 6 69735 741] 이후동일한동작이반복된다. [77 77 6 69735 74 1] After that, the same operation is repeated.
[76] 이와같이본실시예에의한탐지회로 (100)는탐지신호 £1')에따라 [76] In this way, the detection circuit 100 according to this embodiment is based on the detection signal £1').
문턱전압 (!¾)의레벨을조절하여탐지신호 )의안정성을높임으로써제 2 신호 2)가진동하는경우탐지신호 )의레벨이수시로변하는종래의 문제를해결할수있다. By adjusting the level of the threshold voltage (!¾) to increase the stability of the detection signal), when the second signal 2) vibrates, the level of the detection signal) changes frequently.
본발명의권리범위는이상의개시로한정되는것은아니다.본발명의 권리범위는청구범위에문언적으로기재된범위와그균등범위를기준으로 해석되어야한다. The scope of the rights of the present invention is not limited to the above disclosure. The scope of the rights of the present invention should be interpreted on the basis of the scope of the claims and its equivalent.
8] 8]

Claims

2020/175839 1»（：1/10公020/002145 청구범위 2020/175839 1»（：1/10公020/002145 Claims
[청구항 1] 탐지신호에따라입력신호를감지하여생성된제 1신호를판독하여 판독신호를생성하는판독회로;및상기입력신호를감지하여생성된 제 2신호에따라상기탐지신호를생성하는탐지회로를포함하는 반도체장치; [Claim 1] A reading circuit for generating a read signal by detecting an input signal according to a detection signal and reading a first signal generated; And a detection for generating the detection signal according to the second signal generated by detecting the input signal A semiconductor device including a circuit;
상기입력신호를감지하여상기제 1신호를출력하는주센서 ;및 상기입력신호를감지하여상기제 2신호를출력하는탐지센서 를포함하되 , A main sensor that senses the input signal and outputs the first signal; and a detection sensor that senses the input signal and outputs the second signal,
상기판독회로는상기탐지신호가활성화된경우에활성화되고상기 탐지신호가비활성화된경우에비활성화되고,상기주센서는상기탐지 신호가활성화된경우에활성화되고상기탐지신호가비활성화된경우 비활성화되는센서시스템. The reading circuit is activated when the detection signal is activated and deactivated when the detection signal is deactivated, and the main sensor is activated when the detection signal is activated, and a sensor system that is deactivated when the detection signal is deactivated. .
[청구항 2] 청구항 1에있어서 ,상기판독신호를처리하는신호처리회로를더 포함하되,상기신호처리회로는상기탐지신호가활성화된경우에 활성화되고상기탐지신호가비활성화된경우비활성화되는센서 시스템. [Claim 2] The sensor system according to claim 1, further comprising a signal processing circuit for processing the read signal, wherein the signal processing circuit is activated when the detection signal is activated and deactivated when the detection signal is deactivated.
[청구항 3] 청구항 1에있어서 ,상기탐지회로는 [Claim 3] In claim 1, the detection circuit
상기제 2신호를증폭하는증폭기 ; An amplifier that amplifies the second signal;
상기증폭기의출력에서포락선을탐지하여포락선신호를출력하는 포락선탐지회로; An envelope detection circuit for outputting an envelope signal by detecting an envelope at the output of the amplifier;
상기포락선신호와문턱전압을비교하여상기탐지신호를출력하는 비교기 ;및 A comparator for comparing the envelope signal and a threshold voltage to output the detection signal; And
상기탐지신호에따라상기문턱전압의레벨을조절하는문턱전압 조절회로 A threshold voltage adjustment circuit that adjusts the level of the threshold voltage according to the detection signal
를포함하는센서시스템. Sensor system comprising a.
[청구항 4] 청구항 3에있어서 ,상기탐지회로는상기제 2신호를차동신호로 [Claim 4] In claim 3, the detection circuit uses the second signal as a differential signal.
변환하는차동신호생성기를더포함하는센서시스템. A sensor system further comprising a differential signal generator to convert.
[청구항 5] 청구항 3에있어서,상기문턱전압조절회로는상기탐지신호에따라제 [Claim 5] In claim 3, the threshold voltage control circuit is adjusted according to the detection signal
1기준전압과상기제 1기준전압보다작은제 2기준전압중하나를 선택하는선택부를포함하는센서시스템. A sensor system comprising a selector for selecting one of a reference voltage and a second reference voltage smaller than the first reference voltage.
[청구항 6] 청구항 5에있어서,상기문턱전압조절회로는상기제 1기준전압과 상기제 2기준전압을생성하는기준전압생성회로를더포함하는센서 시스템. [Claim 6] The sensor system according to claim 5, wherein the threshold voltage control circuit further comprises a reference voltage generation circuit that generates the first reference voltage and the second reference voltage.
PCT/KR2020/002145 2019-02-28 2020-02-14 Semiconductor apparatus for detecting sensor signal and sensor system including same WO2020175839A1 (en)

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