WO2020168989A1

WO2020168989A1 - Panel and manufacturing method and display device

Info

Publication number: WO2020168989A1
Application number: PCT/CN2020/075457
Authority: WO
Inventors: 秦斌; 张方振; 彭***
Original assignee: 京东方科技集团股份有限公司
Priority date: 2019-02-22
Filing date: 2020-02-17
Publication date: 2020-08-27
Also published as: CN109904198A; CN109904198B

Abstract

Provided are a panel and a manufacturing method and a display device. The manufacturing method for the panel comprises: forming a first flexible substrate layer (2) on a support substrate (1); forming a dielectric layer (3) on the first flexible substrate layer (2); forming a second flexible substrate layer (5) on the dielectric layer (3); forming a through hole (H0) which penetrates through the second flexible substrate layer (5) and the dielectric layer (3); forming wires (6) at least on the sidewall and bottom of the through hole (H0); and stripping off the support substrate (1) and removing the first flexible substrate layer (2) to expose the wires (6). According to the panel and the manufacturing method and the display device, the problem of poor contact between the wires (6) and a control circuit can be solved.

Description

面板及制作方法和显示装置Panel and manufacturing method and display device

相关申请的交叉引用Cross references to related applications

本专利申请要求于2019年2月22日递交的中国专利申请第201910132319.2号的优先权，在此全文引用上述中国专利申请公开的内容以作为本公开的实施例的一部分。This patent application claims the priority of the Chinese patent application No. 201910132319.2 filed on February 22, 2019, and the content disclosed in the above Chinese patent application is quoted here in full as a part of the embodiments of the present disclosure.

技术领域Technical field

本公开的实施例涉及一种面板及制作方法和显示装置。The embodiments of the present disclosure relate to a panel, a manufacturing method and a display device.

背景技术Background technique

随着显示技术的发展，用户对显示装置无边框设计的呼声越来越高。为实现显示装置的无边框设计，目前是在柔性显示装置的制作过程中，将控制电路设置在柔性衬底的远离所述显示面板的设置其他膜层的一侧，通过在柔性衬底上形成通孔并在所述通孔中制作金属导线以将所述显示面板的阵列基板上的信号线连接至控制电路。With the development of display technology, users are increasingly calling for the borderless design of display devices. In order to realize the frameless design of the display device, currently in the manufacturing process of the flexible display device, the control circuit is arranged on the side of the flexible substrate away from the display panel where other film layers are arranged, and formed on the flexible substrate Through holes and making metal wires in the through holes to connect the signal lines on the array substrate of the display panel to the control circuit.

发明内容Summary of the invention

本公开的实施例提供一种面板及制作方法和显示装置，提高导线和控制电路的结合性能，解决导线与控制电路的接触不良问题。The embodiments of the present disclosure provide a panel, a manufacturing method and a display device, which improve the combination performance of the wire and the control circuit, and solve the problem of poor contact between the wire and the control circuit.

本公开至少一实施例提供一种面板的制作方法，包括：在支撑衬底上形成第一柔性衬底层；在所述第一柔性衬底层上形成介质层；在所述介质层上形成第二柔性衬底层；形成贯通所述第二柔性衬底层及所述介质层的通孔；至少在所述通孔侧壁及底部形成导线；以及剥离所述支撑衬底并去除所述第一柔性衬底层以露出所述导线。At least one embodiment of the present disclosure provides a method for manufacturing a panel, including: forming a first flexible substrate layer on a supporting substrate; forming a dielectric layer on the first flexible substrate layer; and forming a second flexible substrate layer on the dielectric layer. A flexible substrate layer; forming a through hole penetrating the second flexible substrate layer and the dielectric layer; forming a wire at least on the sidewall and bottom of the through hole; and peeling off the supporting substrate and removing the first flexible liner Bottom layer to expose the wires.

在本公开的一个或多个实施例中，该方法还包括：在所述第一柔性衬底层和所述介质层之间形成金属层；所述通孔被形成为露出所述金属层的部分表面。In one or more embodiments of the present disclosure, the method further includes: forming a metal layer between the first flexible substrate layer and the dielectric layer; and the through hole is formed to expose a portion of the metal layer surface.

在本公开的一个或多个实施例中，剥离所述支撑衬底并去除所述第一柔性衬底层包括：通过激光剥离所述支撑衬底；通过第一干法刻蚀工艺去除所述第一柔性衬底层；以及通过第二干法刻蚀工艺去除所述金属层。In one or more embodiments of the present disclosure, peeling off the support substrate and removing the first flexible substrate layer includes: peeling off the support substrate by laser; and removing the second substrate by a first dry etching process. A flexible substrate layer; and removing the metal layer through a second dry etching process.

在本公开的一个或多个实施例中，所述第一干法刻蚀工艺和所述第二干法刻蚀工艺的刻蚀条件不同。In one or more embodiments of the present disclosure, the etching conditions of the first dry etching process and the second dry etching process are different.

在本公开的一个或多个实施例中，所述第一干法刻蚀工艺和所述第二干法刻蚀工艺采用的刻蚀气体不同。In one or more embodiments of the present disclosure, the first dry etching process and the second dry etching process use different etching gases.

在本公开的一个或多个实施例中，所述第一干法刻蚀工艺的刻蚀气体包括氧气，所述第二干法刻蚀工艺的刻蚀气体包括等离子体形式的氯气。In one or more embodiments of the present disclosure, the etching gas of the first dry etching process includes oxygen gas, and the etching gas of the second dry etching process includes chlorine gas in the form of plasma.

在本公开的一个或多个实施例中，剥离所述支撑衬底并去除所述第一柔性衬底层包括：通过激光剥离所述支撑衬底、烧蚀所述第一柔性衬底层并产生碳化粉末；通过干法刻蚀工艺轰击所述金属层以去除所述碳化粉末和所述金属层。In one or more embodiments of the present disclosure, peeling off the support substrate and removing the first flexible substrate layer includes: peeling off the support substrate by laser, ablating the first flexible substrate layer and generating carbonization Powder; bombarding the metal layer by a dry etching process to remove the carbonized powder and the metal layer.

在本公开的一个或多个实施例中，所述介质层的材料包括无机非金属材料。In one or more embodiments of the present disclosure, the material of the dielectric layer includes inorganic non-metallic materials.

在本公开的一个或多个实施例中，所述介质层的材料包括二氧化硅。In one or more embodiments of the present disclosure, the material of the dielectric layer includes silicon dioxide.

在本公开的一个或多个实施例中，所述第一柔性衬底层和所述第二柔性衬底层的材料均包括有机材料，所述金属层的材料包括Mo。In one or more embodiments of the present disclosure, the materials of the first flexible substrate layer and the second flexible substrate layer both include organic materials, and the material of the metal layer includes Mo.

在本公开的一个或多个实施例中，该方法还包括形成平坦化层以及在所述平坦化层上形成功能元件，其中，所述平坦化层覆盖所述第二柔性衬底层以及所述导线，所述功能元件与所述导线相连。In one or more embodiments of the present disclosure, the method further includes forming a planarization layer and forming a functional element on the planarization layer, wherein the planarization layer covers the second flexible substrate layer and the Wire, the functional element is connected to the wire.

在本公开的一个或多个实施例中，所述功能元件包括显示元件和触控元件至少之一。In one or more embodiments of the present disclosure, the functional element includes at least one of a display element and a touch control element.

在本公开的一个或多个实施例中，该方法还包括在所述介质层的设置所述第二柔性衬底层的相反侧设置焊盘，所述焊盘与所述导线相连。In one or more embodiments of the present disclosure, the method further includes providing a pad on the opposite side of the dielectric layer where the second flexible substrate layer is provided, and the pad is connected to the wire.

在本公开的一个或多个实施例中，在所述焊盘的远离所述导线的一侧设置有焊盘绑定基板，所述焊盘绑定基板和所述焊盘相连。In one or more embodiments of the present disclosure, a pad binding substrate is provided on a side of the pad away from the wire, and the pad binding substrate is connected to the pad.

本公开的至少一实施例还提供一种面板，包括：介质层；第一柔性衬底层，位于所述介质层上；通孔，贯通所述第一柔性衬底层及所述介质层；以及导线，至少形成在所述通孔的侧壁及底部。At least one embodiment of the present disclosure also provides a panel, including: a dielectric layer; a first flexible substrate layer located on the dielectric layer; a through hole that penetrates the first flexible substrate layer and the dielectric layer; and a wire , Formed at least on the sidewall and bottom of the through hole.

在本公开的一个或多个实施例中，所述介质层采用无机非金属材料，所述第一柔性衬底层采用有机材料。In one or more embodiments of the present disclosure, the dielectric layer is made of inorganic non-metallic materials, and the first flexible substrate layer is made of organic materials.

在本公开的一个或多个实施例中，该面板还包括：焊盘，位于所述介质层的设置所述第一柔性衬底层的相反侧；所述焊盘与所述导线相连。In one or more embodiments of the present disclosure, the panel further includes: a pad located on the opposite side of the dielectric layer where the first flexible substrate layer is provided; the pad is connected to the wire.

在本公开的一个或多个实施例中，该面板还包括第二柔性衬底层，所述第二柔性衬底层位于所述介质层的设置所述第一柔性衬底层的相反侧。In one or more embodiments of the present disclosure, the panel further includes a second flexible substrate layer, and the second flexible substrate layer is located on the opposite side of the dielectric layer where the first flexible substrate layer is provided.

在本公开的一个或多个实施例中，该面板还包括：金属层，形成在所述第一柔性衬底层和所述介质层之间。In one or more embodiments of the present disclosure, the panel further includes: a metal layer formed between the first flexible substrate layer and the dielectric layer.

在本公开的一个或多个实施例中，所述导线与所述金属层接触。In one or more embodiments of the present disclosure, the wire is in contact with the metal layer.

在本公开的一个或多个实施例中，所述金属层与所述第二柔性衬底层接触，所述金属层与所述介质层接触。In one or more embodiments of the present disclosure, the metal layer is in contact with the second flexible substrate layer, and the metal layer is in contact with the dielectric layer.

在本公开的一个或多个实施例中，所述金属层的材料包括Mo。In one or more embodiments of the present disclosure, the material of the metal layer includes Mo.

在本公开的一个或多个实施例中，所述第一柔性衬底层和所述第二柔性衬底层的材料均包括有机材料。In one or more embodiments of the present disclosure, the materials of the first flexible substrate layer and the second flexible substrate layer both include organic materials.

在本公开的一个或多个实施例中，该面板还包括平坦化层以及位于所述平坦化层上的功能元件，所述平坦化层覆盖所述第二柔性衬底层以及所述导线，并且所述功能元件与所述导线相连。In one or more embodiments of the present disclosure, the panel further includes a planarization layer and functional elements located on the planarization layer, the planarization layer covers the second flexible substrate layer and the wires, and The functional element is connected to the wire.

本公开的至少一实施例还提供一种显示装置，包括上述任一面板。At least one embodiment of the present disclosure also provides a display device including any of the above-mentioned panels.

附图说明Description of the drawings

为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。In order to explain the technical solutions of the embodiments of the present disclosure more clearly, the following will briefly introduce the drawings of the embodiments. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limit the present disclosure. .

图1A至图1D为一种在柔性衬底中形成导线并从柔性衬底的背侧暴露导线的示意图；1A to 1D are schematic diagrams of forming wires in a flexible substrate and exposing the wires from the back side of the flexible substrate;

图2A至图2C为一种在柔性衬底中形成导线并从柔性衬底的背侧暴露导线的示意图；2A to 2C are schematic diagrams of forming wires in a flexible substrate and exposing the wires from the back side of the flexible substrate;

图3示出本公开的实施例的一个实施例所述面板的结构示意图；Fig. 3 shows a schematic structural diagram of a panel according to an embodiment of the present disclosure;

图4示出本公开的实施例的另一个实施例所述面板的结构示意图；Fig. 4 shows a schematic structural diagram of a panel according to another embodiment of the present disclosure;

图5示出本公开的实施例的一个实施例所述面板制作方法的流程图；FIG. 5 shows a flowchart of a panel manufacturing method according to an embodiment of the present disclosure;

图6示出本公开的实施例的一个实施例所述柔性显示面板制作方法的流程图；FIG. 6 shows a flowchart of a method for manufacturing a flexible display panel according to an embodiment of the present disclosure;

图7示出本公开的实施例的一个实施例所述柔性显示面板剥离前的结构示意图；FIG. 7 shows a schematic structural view of the flexible display panel before peeling off according to an embodiment of the present disclosure;

图8示出本公开的实施例的一个实施例所述柔性显示面板的结构示意图；以及FIG. 8 shows a schematic structural diagram of a flexible display panel according to an embodiment of the present disclosure; and

图9为本公开的实施例提供的一种面板的示意图。FIG. 9 is a schematic diagram of a panel provided by an embodiment of the disclosure.

具体实施方式detailed description

为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。In order to make the objectives, technical solutions, and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be described clearly and completely in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative labor are within the protection scope of the present disclosure.

除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those with ordinary skills in the field to which this disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. Similarly, "including" or "including" and other similar words mean that the elements or items appearing in front of the word cover the elements or items listed after the word and their equivalents, without excluding other elements or items. Similar words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to indicate the relative position relationship. When the absolute position of the described object changes, the relative position relationship may also change accordingly.

本申请的发明人发现，在显示装置的制作过程中，在柔性衬底上形成通孔后并完成所述显示面板的其他膜层的制备后，当剥离支撑衬底与柔性衬底时，所述柔性衬底在干法刻蚀时易发生过刻蚀而导致金属导线脱落，或者所述柔性衬底因激光烧蚀产生大量难以清除的碳化粉末，容易导致所述金属导线与控制电路接触不良，从而在一定程度上影响显示装置的显示效果。The inventor of the present application found that in the manufacturing process of the display device, after forming the through holes on the flexible substrate and completing the preparation of other film layers of the display panel, when the support substrate and the flexible substrate are peeled off, The flexible substrate is prone to over-etching during dry etching to cause the metal wire to fall off, or the flexible substrate generates a large amount of carbonized powder that is difficult to remove due to laser ablation, which easily leads to poor contact between the metal wire and the control circuit , Thereby affecting the display effect of the display device to a certain extent.

通常，通过在聚酰亚胺材质的柔性衬底上形成通孔，并在通孔中制作铜导线用于垂直连接设置在柔性衬底的远离所述显示面板的其他膜层一侧的控制电路与所述显示面板的阵列基板，以实现显示面板的无边框化。Usually, a through hole is formed on a flexible substrate made of polyimide, and a copper wire is made in the through hole to vertically connect the control circuit arranged on the side of the flexible substrate away from the other film layers of the display panel And the array substrate of the display panel to realize the framelessness of the display panel.

图1A至图1D为一种在柔性衬底中形成导线并从柔性衬底的背侧暴露导线的示意图。如图1A所示，在玻璃衬底上的柔性衬底里形成凹槽；如图1B所示，在凹槽内形成铜导线；采用小功率(22mJ/cm ²)的激光剥离玻璃衬底后的结构如图1C所示；如图1D所示，剩余的1μm左右的聚酰亚胺通过干法刻蚀的方法去除，即向干法刻蚀腔体中通入O ₂气体，使位于导线的背侧的剩余的聚酰亚胺基体灰化，但干法刻蚀工艺在大面积灰化聚酰亚胺时容易产生刻蚀不均匀，导致铜导线与控制电路结合时部分电路不能完全接触或因过刻蚀导致在柔性衬底上的功能元件的阵列或铜导线脱落等不良现象。 1A to 1D are schematic diagrams of forming wires in a flexible substrate and exposing the wires from the back side of the flexible substrate. As shown in Figure 1A, a groove is formed in the flexible substrate on the glass substrate; as shown in Figure 1B, a copper wire is formed in the groove; the glass substrate is peeled off with a low-power (22mJ/cm ² ) laser The structure is shown in Figure 1C; as shown in Figure 1D, the remaining polyimide of about 1 μm is removed by dry etching, that is, O ₂ gas is introduced into the dry etching cavity to make the wire The remaining polyimide matrix on the back side is ashed, but the dry etching process is prone to uneven etching when a large area of polyimide is ashed, which results in that part of the circuit cannot be completely contacted when the copper wire is combined with the control circuit. Due to over-etching, the array of functional elements on the flexible substrate or the copper wires fall off and other undesirable phenomena.

图2A至图2C为一种在柔性衬底中形成导线并从柔性衬底的背侧暴露导线的示意图。如图2A所示，在玻璃衬底上的柔性衬底里形成凹槽，如图2B所示，在凹槽内形成铜导线，如图2C所示，采用大功率激光能量(例如300mJ/cm ²)剥离玻璃衬底以及未穿孔部分的聚酰亚胺，未穿孔部分聚酰亚胺厚度约为1μm，在此激光功率参数下，约为1μm厚的聚酰亚胺被激光完全烧蚀，使得玻璃衬底被剥离，从柔性衬底的背侧露出铜导线。但是在此过程中，烧蚀聚酰亚胺会产生大量碳化粉末，采用去离子风吹除法、环氧树脂胶粘除法等方法清除碳化颗粒，但只能去除颗粒尺寸较大的碳化粉末，仍残留大量微米级的粉末，会导致后续铜导线与控制电路结合不良，接触电阻过大等不良现象。 2A to 2C are schematic diagrams of forming wires in a flexible substrate and exposing the wires from the back side of the flexible substrate. As shown in Figure 2A, a groove is formed in the flexible substrate on the glass substrate. As shown in Figure 2B, a copper wire is formed in the groove. As shown in Figure 2C, a high-power laser energy (for example, 300mJ/cm ² ) Peel off the polyimide of the glass substrate and the non-perforated part. The thickness of the non-perforated polyimide is about 1μm. Under this laser power parameter, the polyimide of about 1μm is completely ablated by the laser, so The glass substrate is peeled off, and the copper wires are exposed from the back side of the flexible substrate. However, in this process, ablation of polyimide will produce a large amount of carbonized powder. The carbonized particles can be removed by deionized wind blowing method and epoxy resin adhesive removal method, but only the carbonized powder with larger particle size can be removed. A large amount of micron-level powder remains, which will lead to poor bonding between the subsequent copper wires and the control circuit, and excessive contact resistance.

图3为本公开的一个实施例提供的一种面板的结构示意图。如图3所示，本公开的一个实施例提供一种面板，该面板包括第一柔性衬底层2；形成在所述第一柔性衬底层2上的介质层3；形成在所述介质层3上的第二柔性衬底层5；通孔H0，贯通所述第二柔性衬底层5及所述介质层3；至少形成在所述通孔侧壁及底部的导线6。如图3所示，面板还可以包括覆盖所述第二柔性衬底层5以及所述金属导线6的平坦化层7。FIG. 3 is a schematic structural diagram of a panel provided by an embodiment of the disclosure. As shown in FIG. 3, an embodiment of the present disclosure provides a panel that includes a first flexible substrate layer 2; a dielectric layer 3 formed on the first flexible substrate layer 2; and a dielectric layer 3 formed on the dielectric layer 3. The second flexible substrate layer 5 on the upper side; the through hole H0 penetrates the second flexible substrate layer 5 and the dielectric layer 3; and the wires 6 formed at least on the sidewall and bottom of the through hole. As shown in FIG. 3, the panel may further include a planarization layer 7 covering the second flexible substrate layer 5 and the metal wires 6.

图3还示出了连接元件18。连接元件18通过贯穿平坦化层7的过孔H1与导线6相连。面板可包括功能元件，功能元件与连接元件18相连。例如，功能元件包括显示元件，从而面板为显示面板。例如，功能元件包括触控元件，从而面板为触摸面板。本公开的实施例以面板为显示面板为例进行说明。例如，触控元件包括触控电极，但不限于此。FIG. 3 also shows the connecting element 18. The connecting element 18 is connected to the wire 6 through a via H1 penetrating the planarization layer 7. The panel may include functional elements, and the functional elements are connected to the connecting element 18. For example, the functional element includes a display element, so that the panel is a display panel. For example, the functional element includes a touch element, so that the panel is a touch panel. The embodiment of the present disclosure is described by taking the panel as a display panel as an example. For example, the touch element includes a touch electrode, but is not limited thereto.

在面板制作时，第一柔性衬底层2位于支撑衬底1上，支撑衬底1起到支撑作用。支撑衬底1只在制作过程中使用，在面板的制作过程中被去除，不存在于面板中。例如，支撑衬底1为硬性衬底，例如，支撑衬底1包括玻璃衬底，但不限于此。When the panel is manufactured, the first flexible substrate layer 2 is located on the supporting substrate 1, and the supporting substrate 1 plays a supporting role. The supporting substrate 1 is only used during the manufacturing process, is removed during the manufacturing process of the panel, and does not exist in the panel. For example, the supporting substrate 1 is a rigid substrate. For example, the supporting substrate 1 includes a glass substrate, but is not limited thereto.

在一个实施例中，所述第一柔性衬底层2为柔性材料，但不限于此。例如，第一柔性衬底层2可采用有机材料。例如，第一柔性衬底层2的材料包括的聚酰亚胺，但不限于此。例如，所述介质层3的材料为与第一柔性衬底层2具有良好的粘接性、并且采用与所述第一柔性衬底层2不同的干法刻蚀条件进行刻蚀。例如，所述介质层的材料包括无机非金属材料。例如，介质层3的材料采用二氧化硅。所述第二柔性衬底层5可以与第一柔性衬底层2相同或不同，例如，第二柔性衬底层5采用与所述第一柔性衬底层2相同的聚酰亚胺。例如，所述导线6选择不同于第一柔性衬底层2的干法刻蚀条件的材料，例如，采用金属铜作为导线6的材料，但不限于此，导线6也可以采用其他的金属材料或采用合金。例如，所述平坦化层7的材料使用通常材料，例如，可采用有机材料，包括聚酰亚胺或树脂，但不限于此。例如，所述第一柔性衬底层2设置为厚度为1μm的聚酰亚胺以使得支撑衬底1和介质层3二氧化硅具有良好的结合力，并满足后续所述面板的其他膜层的制作条件。例如，所述介质层3设置为厚度为500nm的二氧化硅以提高与第二柔性衬底层5的粘附力并能够阻挡对第二柔性衬底层的刻蚀。当然，以上例举了各种元件的材质和厚度，但并不限于以上描述，各元件也可以采用其他适合的材质和适合的厚度。In an embodiment, the first flexible substrate layer 2 is a flexible material, but it is not limited thereto. For example, the first flexible substrate layer 2 may use organic materials. For example, the material of the first flexible substrate layer 2 includes polyimide, but is not limited thereto. For example, the material of the dielectric layer 3 has good adhesion with the first flexible substrate layer 2 and is etched under different dry etching conditions from the first flexible substrate layer 2. For example, the material of the dielectric layer includes inorganic non-metallic materials. For example, the material of the dielectric layer 3 is silicon dioxide. The second flexible substrate layer 5 may be the same as or different from the first flexible substrate layer 2. For example, the second flexible substrate layer 5 uses the same polyimide as the first flexible substrate layer 2. For example, the wire 6 is selected from a material different from the dry etching conditions of the first flexible substrate layer 2, for example, metal copper is used as the material of the wire 6, but not limited to this, the wire 6 can also be made of other metal materials or Use alloy. For example, common materials are used for the material of the planarization layer 7, for example, organic materials may be used, including polyimide or resin, but not limited thereto. For example, the first flexible substrate layer 2 is set as polyimide with a thickness of 1 μm so that the support substrate 1 and the dielectric layer 3 have a good bonding force with silicon dioxide, and meet the requirements of other film layers of the panel. Production conditions. For example, the dielectric layer 3 is made of silicon dioxide with a thickness of 500 nm to improve the adhesion with the second flexible substrate layer 5 and can block the etching of the second flexible substrate layer. Of course, the materials and thicknesses of various elements are exemplified above, but they are not limited to those described above, and other suitable materials and thicknesses can also be used for each element.

例如，形成通孔H0包括在第二柔性衬底层5上形成光刻胶图形，再以光刻胶图形为掩膜依次通入氧气(O ₂)气体和四氟化碳(CF ₄)气体，以对第二柔性衬底层5和介质层3分别进行干法刻蚀，形成贯穿第二柔性衬底层5和介质层3的通孔H0。当然，刻蚀气体不限于上述描述，也可选择其他适合的气体。 For example, forming the through hole H0 includes forming a photoresist pattern on the second flexible substrate layer 5, and then using the photoresist pattern as a mask to sequentially pass oxygen (O ₂ ) gas and carbon tetrafluoride (CF ₄ ) gas, Dry etching is performed on the second flexible substrate layer 5 and the dielectric layer 3 respectively to form a through hole H0 penetrating the second flexible substrate layer 5 and the dielectric layer 3. Of course, the etching gas is not limited to the above description, and other suitable gases can also be selected.

经小功率激光剥离后，采用干法刻蚀去除所述第一柔性衬底层2，由于二氧化硅具有与聚酰亚胺不同的干法刻蚀条件，选择适用于聚酰亚胺干法刻蚀的气体，同时所述气体不能刻蚀二氧化硅。例如，刻蚀气体采用氧气，但不限于此。在干法刻蚀的过程中，向干法刻蚀腔体中通入O ₂气体，所述氧气以化学活性较强的等离子体形式对第一柔性衬底层2的聚酰亚胺进行灰化；由于所述二氧化硅与聚酰亚胺的刻蚀条件不同，在干法刻蚀时，二氧化硅材质的所述介质层3作为刻蚀的阻挡层，当刻蚀聚酰亚胺后，所述干法刻蚀的刻蚀速率在二氧化硅材质的介质层处停止，即，介质层不被O ₂气体刻蚀。从而实现对所述第一柔性衬底层2的均匀刻蚀。值得说明的是，本领域技术人员应当根据实际应用材料选择干法刻蚀的气体，以去除所述第一柔性衬底层，在此不再赘述。 After being stripped by a low-power laser, dry etching is used to remove the first flexible substrate layer 2. Since silicon dioxide has different dry etching conditions from polyimide, the choice is suitable for polyimide dry etching. At the same time, the gas cannot etch silicon dioxide. For example, the etching gas uses oxygen, but it is not limited to this. During the dry etching process, O ₂ gas is introduced into the dry etching chamber, and the oxygen gas ashes the polyimide of the first flexible substrate layer 2 in the form of a plasma with strong chemical activity. Because the etching conditions of the silicon dioxide and polyimide are different, during dry etching, the dielectric layer 3 made of silicon dioxide serves as an etching barrier layer, and when the polyimide is etched The etching rate of the dry etching stops at the dielectric layer made of silicon dioxide, that is, the dielectric layer is not etched by O ₂ gas. Thus, uniform etching of the first flexible substrate layer 2 is realized. It is worth noting that those skilled in the art should select dry etching gas according to actual application materials to remove the first flexible substrate layer, which will not be repeated here.

考虑到使用大功率激光能量剥离支撑衬底时存在的问题，在一个实施例中，如图4所示，所述面板还包括金属层4，金属层4形成在所述第一柔性衬底层2和所述介质层3之间，所述金属层4的刻蚀条件不同于所述第一柔性衬底层2、介质层3和面板的各膜层的刻蚀条件。例如，金属层的材质包括钼(Mo)，但不限于此。在第一柔性衬底层2和所述介质层3之间加入金属层，一方面，所述金属层在制作过程中作为刻蚀所述通孔H0的刻蚀阻挡层，当刻蚀所述第二柔性衬底层5和介质层3后，刻蚀速率在金属层停止从而提高所述通孔的刻蚀均匀性；另一方面在激光剥离过程中，金属层能够将入射的激光反射至第一柔性衬底层2以防止激光影响所述面板的其他膜层的性能；同时对于在激光剥离过程中因激光烧蚀第一柔性衬底层2产生大量碳化颗粒，在使用干法刻蚀的过程中，干法刻蚀产生的等离子体轰击金属层和碳化颗粒，使所述金属层和碳化颗粒气化，并通过干法刻蚀腔体的气氛循环***带走，从而实现彻底清除碳化粉末。Considering the problems existing when using high-power laser energy to peel off the supporting substrate, in one embodiment, as shown in FIG. 4, the panel further includes a metal layer 4, which is formed on the first flexible substrate layer 2. Between and the dielectric layer 3, the etching conditions of the metal layer 4 are different from the etching conditions of the first flexible substrate layer 2, the dielectric layer 3, and each film layer of the panel. For example, the material of the metal layer includes molybdenum (Mo), but is not limited thereto. A metal layer is added between the first flexible substrate layer 2 and the dielectric layer 3. On the one hand, the metal layer serves as an etching stop layer for etching the through hole H0 during the manufacturing process. After the second flexible substrate layer 5 and the dielectric layer 3, the etching rate stops at the metal layer to improve the etching uniformity of the via; on the other hand, during the laser lift-off process, the metal layer can reflect the incident laser to the first The flexible substrate layer 2 prevents the laser from affecting the performance of other film layers of the panel; at the same time, for the large number of carbonized particles generated by the laser ablation of the first flexible substrate layer 2 during the laser lift-off process, during the dry etching process, The plasma generated by the dry etching bombards the metal layer and the carbonized particles to vaporize the metal layer and the carbonized particles, and is taken away by the atmosphere circulation system of the dry etching cavity, thereby achieving complete removal of the carbonized powder.

例如，为满足面板制作、激光剥离和干法刻蚀的要求，所述金属层4需要与第一柔性衬底层2和介质层3分别紧密结合，并且所述金属层4的干法刻蚀的刻蚀条件与第一柔性衬底层2、介质层3以及面板的其他膜层的刻蚀条件不同，同时还应满足后续在所述面板结构上制作面板的其他膜层的工艺要求、以及在转移显示元件的过程中对力学的要求，因此本领域技术人员应当根据实际应用选择所述第一柔性衬底层、金属层和介质层的材料以满足生产需求。For example, in order to meet the requirements of panel production, laser lift-off and dry etching, the metal layer 4 needs to be tightly combined with the first flexible substrate layer 2 and the dielectric layer 3 respectively, and the dry etching of the metal layer 4 The etching conditions are different from those of the first flexible substrate layer 2, the dielectric layer 3, and other film layers of the panel. At the same time, it should also meet the subsequent process requirements for making other film layers of the panel on the panel structure and the transfer There are requirements for mechanics in the process of displaying elements, so those skilled in the art should select the materials of the first flexible substrate layer, metal layer and dielectric layer according to actual applications to meet production requirements.

例如，金属层4和导线6的刻蚀工艺不同，例如，刻蚀金属层4的刻蚀气体不能刻蚀导线6。例如，金属层4和导线6采用不同的材料。例如，金属层4和导线6采用不同的金属材料。For example, the etching process of the metal layer 4 and the wire 6 are different, for example, the etching gas used to etch the metal layer 4 cannot etch the wire 6. For example, the metal layer 4 and the wire 6 use different materials. For example, the metal layer 4 and the wire 6 use different metal materials.

例如，如图4所示，金属层4与第一柔性衬底层2接触，金属层4与介质层3接触，金属层4与导线6接触。For example, as shown in FIG. 4, the metal layer 4 is in contact with the first flexible substrate layer 2, the metal layer 4 is in contact with the dielectric layer 3, and the metal layer 4 is in contact with the wire 6.

如图5所示，本公开的一个实施例还提供上述面板的制作方法，包括：在支撑衬底上形成第一柔性衬底层；在所述第一柔性衬底层上形成介质层；在所述介质层上形成第二柔性衬底层；形成贯通所述第二柔性衬底层及所述介质层的通孔；至少在所述通孔侧壁及底部形成导线；剥离所述支撑衬底并去除所述第一柔性衬底层以露出导线。As shown in FIG. 5, an embodiment of the present disclosure further provides a method for manufacturing the above-mentioned panel, including: forming a first flexible substrate layer on a supporting substrate; forming a dielectric layer on the first flexible substrate layer; A second flexible substrate layer is formed on the dielectric layer; a through hole penetrating the second flexible substrate layer and the dielectric layer is formed; wires are formed at least on the sidewall and bottom of the through hole; the supporting substrate is peeled off and all The first flexible substrate layer exposes the wires.

例如，如图5所示，面板的制作方法还包括：形成覆盖所述第二柔性衬底层以及所述导线的平坦化层；在所述平坦化层上形成功能元件。功能元件与导线相连。多个功能元件可形成阵列。每个功能元件均与一条导线相连。例如，功能元件包括薄膜晶体管和显示元件。例如，显示元件通过薄膜晶体管与导线相连。For example, as shown in FIG. 5, the manufacturing method of the panel further includes: forming a planarization layer covering the second flexible substrate layer and the wires; and forming a functional element on the planarization layer. The functional element is connected to the wire. Multiple functional elements can form an array. Each functional element is connected to a wire. For example, functional elements include thin film transistors and display elements. For example, the display element is connected to the wire through a thin film transistor.

首先，如图3所示，在支撑衬底1上涂覆并固化一层聚酰亚胺形成第一柔性衬底层2，为使所述第一柔性衬底层2与支撑衬底1、介质层3具有足够的结合力，所述第一柔性衬底层2的聚酰亚胺的厚度设置为约1μm。First, as shown in FIG. 3, a layer of polyimide is coated and cured on the supporting substrate 1 to form the first flexible substrate layer 2, so that the first flexible substrate layer 2 and the supporting substrate 1, the dielectric layer 3 has sufficient bonding force, and the thickness of the polyimide of the first flexible substrate layer 2 is set to about 1 μm.

第二，在第一柔性衬底层2上沉积介质层3，所述介质层3采用二氧化硅，为增加二氧化硅对干法刻蚀的阻挡，所述介质层3的二氧化硅的厚度设置为约500nm。Second, a dielectric layer 3 is deposited on the first flexible substrate layer 2. The dielectric layer 3 is made of silicon dioxide. In order to increase the resistance of silicon dioxide to dry etching, the thickness of the silicon dioxide of the dielectric layer 3 Set to about 500nm.

第三，在介质层3上涂覆并固化一层聚酰亚胺形成第二柔性衬底层5，所述第二柔性衬底层5为柔性显示面板的柔性衬底。Third, a layer of polyimide is coated and cured on the dielectric layer 3 to form a second flexible substrate layer 5, which is a flexible substrate of a flexible display panel.

第四，形成贯通所述第二柔性衬底层及所述介质层的通孔H0。通过图案化形成贯通所述第二柔性衬底层5和所述介质层3的通孔，在本实施例中，在第二柔性衬底层5上制作光刻胶图案作为掩膜并依次通入O ₂和CF ₄以刻蚀第二柔性衬底层5和介质层3以形成通孔H0。 Fourth, forming a through hole H0 penetrating the second flexible substrate layer and the dielectric layer. The through holes passing through the second flexible substrate layer 5 and the dielectric layer 3 are formed by patterning. In this embodiment, a photoresist pattern is fabricated on the second flexible substrate layer 5 as a mask and passes through O ₂ and CF _{4 are used} to etch the second flexible substrate layer 5 and the dielectric layer 3 to form through holes H0.

第五，至少在所述通孔侧壁及底部形成导线。例如，在所述通孔中沉积金属铜作为导线6，在本实施例中，所述导线6覆盖通孔底部、侧壁并延伸至第二柔性衬底层5的部分表面。Fifth, wires are formed at least on the sidewall and bottom of the through hole. For example, metal copper is deposited as the wire 6 in the through hole. In this embodiment, the wire 6 covers the bottom and sidewalls of the through hole and extends to a part of the surface of the second flexible substrate layer 5.

第六，形成覆盖所述第二柔性衬底层以及所述导线的平坦化层7。Sixth, a planarization layer 7 covering the second flexible substrate layer and the wires is formed.

第七，在所述平坦化层7上形成功能元件(图中未示出)，例如，功能元件包括晶体管和显示元件，显示元件包括LED，LED可通过转移的方式形成在第二柔性衬底层上，形成显示元件后进行封装。显示元件不限于LED，还可为有机发光二极管(OLED)。Seventh, functional elements (not shown in the figure) are formed on the planarization layer 7. For example, functional elements include transistors and display elements, and display elements include LEDs. The LEDs can be formed on the second flexible substrate layer by transfer. Above, the display element is formed and then packaged. The display element is not limited to an LED, and may also be an organic light emitting diode (OLED).

第八，剥离所述支撑衬底并去除所述第一柔性衬底层。Eighth, peel off the support substrate and remove the first flexible substrate layer.

例如，当形成覆盖所述第二柔性衬底层5的平坦化层7后，形成与所述导线6相连的连接元件18，连接元件18通过贯穿所述平坦化层的过孔与导线6相连，例如，连接元件18用于与显示面板的栅极或源极相连。同时，导线6的另一端(背侧部分)用于在剥离支撑衬底并去除第一柔性衬底层后与控制电路电连接。For example, after the planarization layer 7 covering the second flexible substrate layer 5 is formed, a connection element 18 connected to the wire 6 is formed, and the connection element 18 is connected to the wire 6 through a via that penetrates the planarization layer. For example, the connecting element 18 is used to connect to the gate or source of the display panel. At the same time, the other end (back side portion) of the wire 6 is used to electrically connect with the control circuit after peeling off the supporting substrate and removing the first flexible substrate layer.

例如，第二柔性衬底层5的厚度大于第一柔性衬底层2的厚度。例如，第一柔性衬底层2和第二柔性衬底层5均可采用有机材料。例如，第一柔性衬底层2和第二柔性衬底层5均可采用聚酰亚胺，但不限于此。For example, the thickness of the second flexible substrate layer 5 is greater than the thickness of the first flexible substrate layer 2. For example, both the first flexible substrate layer 2 and the second flexible substrate layer 5 can use organic materials. For example, both the first flexible substrate layer 2 and the second flexible substrate layer 5 can use polyimide, but it is not limited thereto.

例如，采用小功率(例如，22mJ/cm ²)激光剥离支撑衬底1，在剥离过程中，所述激光烧蚀所述第一柔性衬底层2的聚酰亚胺的一部分以使支撑衬底1脱落。通过干法刻蚀去除所述第一柔性衬底层2以露出所述导线6和所述介质层3。例如，在干法刻蚀腔体中通入氧气气体刻蚀所述第一柔性衬底层2，使得所述聚酰亚胺气化并由气体循环***带走，能够实现对所述第一柔性衬底层2的清洁效果；同时由于二氧化硅材质的所述介质层3具有与聚酰亚胺材质的所述第一柔性衬底层2不同的干法刻蚀条件，当完成所述第一柔性衬底层2刻蚀后，刻蚀速率在所述介质层3停止，从而不仅避免通常技术中对柔性衬底层的过刻蚀，同时还能够实现对第一柔性衬底层2的均匀刻蚀，使得所述露出的金属导线6和介质层3的表面平坦，达到接触面平整的目的。 For example, a low-power (for example, 22mJ/cm ² ) laser is used to peel off the support substrate 1. In the peeling process, the laser ablates a part of the polyimide of the first flexible substrate layer 2 to make the support substrate 1 fall off. The first flexible substrate layer 2 is removed by dry etching to expose the wires 6 and the dielectric layer 3. For example, oxygen gas is introduced into the dry etching chamber to etch the first flexible substrate layer 2, so that the polyimide is vaporized and taken away by the gas circulation system, which can achieve the first flexibility. The cleaning effect of the substrate layer 2; at the same time, since the dielectric layer 3 made of silicon dioxide has different dry etching conditions from the first flexible substrate layer 2 made of polyimide, when the first flexible substrate layer 2 is completed After the substrate layer 2 is etched, the etching rate stops at the dielectric layer 3, thereby not only avoiding the over-etching of the flexible substrate layer in the usual technology, but also achieving uniform etching of the first flexible substrate layer 2 so that The surfaces of the exposed metal wires 6 and the dielectric layer 3 are flat, so that the contact surface is flat.

例如，在制作所述面板的过程中，当通过图案化刻蚀通孔时，为了确保通孔的完整性，通常进行一定量的过刻蚀，则在刻蚀第二柔性衬底层5和介质层3之后，也刻蚀了一部分第一柔性衬底层2，则后续沉积的导线6表现为参差不齐，容易导致后续与控制电路的接触不良的问题，虽然通过控制刻蚀时间能够控制刻蚀程度，但仍存在接触不良的可能。在一个实施例中，如图4所示，所述方法还包括在所述第一柔性衬底层上形成金属层4；所述金属层4形成在所述介质层3和第一柔性衬底层2之间，其中所述通孔被形成为露出所述金属层的一部分的表面。For example, in the process of making the panel, when the through holes are etched by patterning, in order to ensure the integrity of the through holes, a certain amount of over-etching is usually performed, and then the second flexible substrate layer 5 and the medium are etched. After layer 3, a part of the first flexible substrate layer 2 is also etched, and the subsequently deposited wires 6 appear uneven, which easily leads to the problem of poor contact with the control circuit, although the etching can be controlled by controlling the etching time Degree, but there is still the possibility of poor contact. In one embodiment, as shown in FIG. 4, the method further includes forming a metal layer 4 on the first flexible substrate layer; the metal layer 4 is formed on the dielectric layer 3 and the first flexible substrate layer 2. In between, wherein the through hole is formed to expose a part of the surface of the metal layer.

例如，在第一柔性衬底层上形成金属层，在所述金属层上形成所述介质层，则在介质层上形成第二柔性衬底层后刻蚀所述通孔时，由于刻蚀条件不同，当刻蚀所述第二柔性衬底层和介质层后，刻蚀速率在所述金属层停止，露出金属层，所述金属层作为刻蚀阻挡层以避免通常技术中对柔性衬底层的过刻蚀，从而使得形成的所述通孔的深度一致，则所述导线6的形态一致。例如，金属层的材质包括Mo，但不限于此。For example, a metal layer is formed on the first flexible substrate layer, and the dielectric layer is formed on the metal layer. When the through hole is etched after the second flexible substrate layer is formed on the dielectric layer, the etching conditions are different. When the second flexible substrate layer and the dielectric layer are etched, the etching rate stops at the metal layer, exposing the metal layer, and the metal layer serves as an etching barrier to avoid overwhelming the flexible substrate layer in the usual technology. Etching so that the depths of the through holes formed are consistent, and the shapes of the wires 6 are consistent. For example, the material of the metal layer includes Mo, but is not limited thereto.

在一个实施例中，剥离所述支撑衬底并去除所述第一柔性衬底层进一步包括：通过激光剥离所述支撑衬底；通过第一干法刻蚀工艺去除所述第一柔性衬底层；通过第二干法刻蚀工艺去除所述金属层。在本实施例中，采用小功率(例如22mJ/cm ²)激光剥离支撑衬底，在剥离过程中，所述激光烧蚀所述第一柔性衬底层以分离支撑衬底，所述激光烧蚀所述第一柔性衬底层的聚酰亚胺的一部分。通过第一次干法刻蚀工艺去除聚酰亚胺材质的所述第一柔性衬底层，即在干法刻蚀腔体中通入氧气气体灰化所述聚酰亚胺；然后通过第二次干法刻蚀工艺去除所述金属层，即在干法刻蚀腔体中通入氯气气体，所述氯气气体以等离子体形式轰击所述金属层的金属并由气体循环***带走。由于金属层的存在，在小功率激光剥离过程中，通过两次干法刻蚀工艺能够实现对所述第一柔性衬底层和金属层的去除，由于金属层存在不同的干法刻蚀条件，当所述金属层刻蚀完成后，刻蚀速率在所述介质层停止，从而避免对第二柔性衬底层进行过刻蚀，实现均匀刻蚀，即所述露出的导线和介质层的表面平坦，达到接触面平整的目的。 In one embodiment, peeling off the support substrate and removing the first flexible substrate layer further includes: peeling off the support substrate by laser; removing the first flexible substrate layer by a first dry etching process; The metal layer is removed by a second dry etching process. In this embodiment, a low-power (for example, 22 mJ/cm ² ) laser is used to peel off the support substrate. In the peeling process, the laser ablates the first flexible substrate layer to separate the support substrate, and the laser ablation The polyimide part of the first flexible substrate layer. The first flexible substrate layer made of polyimide is removed through the first dry etching process, that is, oxygen gas is introduced into the dry etching chamber to ash the polyimide; and then through the second The secondary dry etching process removes the metal layer, that is, a chlorine gas is introduced into the dry etching chamber, and the chlorine gas bombards the metal of the metal layer in the form of plasma and is taken away by the gas circulation system. Due to the existence of the metal layer, in the low-power laser lift-off process, the first flexible substrate layer and the metal layer can be removed by two dry etching processes. Because the metal layer has different dry etching conditions, After the metal layer is etched, the etching rate stops at the dielectric layer, so as to avoid over-etching the second flexible substrate layer and achieve uniform etching, that is, the exposed wires and dielectric layer have flat surfaces , To achieve the purpose of smooth contact surface.

在另一个实施例中，剥离所述支撑衬底并去除所述第一柔性衬底层进一步包括：通过激光剥离所述支撑衬底层、烧蚀所述第一柔性衬底层并产生碳化粉末；通过干法刻蚀工艺轰击所述金属层以去除所述碳化粉末和金属层。在本实施例中，采用大功率激光能量(例如300mJ/cm ²)剥离支撑衬底时，所述金属层能够将入射的激光反射回第一柔性衬底层从而增加了第一柔性衬底层所吸收的激光的能量，从而降低剥离过程中对激光能量的需求；并且将照射的激光反射回第一柔性衬底层的同时，也避免了照射的激光对面板的各膜层的影响。大功率激光能量(例如300mJ/cm ²)剥离支撑衬底时烧蚀所述第一柔性衬底层并残留大量碳化粉末，利用干法刻蚀工艺刻蚀所述金属层的同时可清除所述碳化粉末。即在干法刻蚀腔体中通入氯气气体，所述氯气气体以等离子体形式轰击所述金属层和碳化粉末，并由气体循环***带走轰击所得物质，从而实现对所述第一柔性衬底层烧蚀残留的碳化粉末和金属层的去除。由于金属层的干法刻蚀条件与介质层和导线的干法刻蚀条件不同，当所述金属层刻蚀完成后，由于氯气与介质层的二氧化硅和导线例如金属铜导线均不反应，刻蚀速率在所述介质层和通孔处的导线处停止，从而避免对第二柔性衬底层进行过刻蚀，同时对于经干法刻蚀后露出的导线和介质层进行平坦化，达到接触面平整的目的。 In another embodiment, peeling off the support substrate and removing the first flexible substrate layer further includes: peeling off the support substrate layer by laser, ablating the first flexible substrate layer and generating carbonized powder; The method etching process bombards the metal layer to remove the carbonized powder and the metal layer. In this embodiment, when using high-power laser energy (for example, 300 mJ/cm ² ) to peel off the supporting substrate, the metal layer can reflect the incident laser back to the first flexible substrate layer, thereby increasing the absorption of the first flexible substrate layer. The energy of the laser, thereby reducing the demand for laser energy during the peeling process; and while reflecting the irradiated laser back to the first flexible substrate layer, it also avoids the impact of the irradiated laser on each film layer of the panel. When the high-power laser energy (for example, 300mJ/cm ² ) peels off the support substrate, the first flexible substrate layer is ablated and a large amount of carbonized powder remains. The metal layer can be etched by a dry etching process while removing the carbonization. powder. That is, chlorine gas is introduced into the dry etching chamber, and the chlorine gas bombards the metal layer and the carbonized powder in the form of plasma, and the bombarded material is taken away by the gas circulation system, thereby achieving the first flexibility Removal of carbonized powder and metal layer remaining after ablation of the substrate layer. Since the dry etching conditions of the metal layer are different from the dry etching conditions of the dielectric layer and the wires, when the metal layer is etched, the chlorine gas does not react with the silicon dioxide of the dielectric layer and the wires, such as metal copper wires. , The etching rate is stopped at the conductors at the dielectric layer and the through holes, so as to avoid over-etching the second flexible substrate layer, and at the same time, the conductors and dielectric layers exposed after dry etching are planarized to achieve The purpose of flat contact surface.

需要说明的是，本领域技术人员可根据实际应用的待刻蚀物体选择适合的刻蚀方法和刻蚀材料，以能够在不同剥离条件下实现对通孔的均匀刻蚀为设计准则，在此不再赘述。It should be noted that those skilled in the art can select suitable etching methods and etching materials according to the objects to be etched in actual applications, and take the uniform etching of the through holes under different stripping conditions as the design criterion. No longer.

在上述面板的基础上，如图6所示，本公开的一个实施例还提供一种柔性显示面板的制作方法，包括在支撑衬底上形成第一柔性衬底层；在所述第一柔性衬底层上形成介质层；在所述介质层上形成第二柔性衬底层；形成贯通所述第二柔性衬底层及所述介质层的通孔；至少在所述通孔侧壁及底部形成导线；形成覆盖所述第二柔性衬底层以及所述导线的平坦化层；在所述平坦化层上形成功能元件，功能元件包括显示元件，多个功能元件形成阵列；剥离所述支撑衬底并去除所述第一柔性衬底层以露出的导线；在露出的导线上形成焊盘；以及通过所述焊盘电连接控制电路。On the basis of the above-mentioned panel, as shown in FIG. 6, an embodiment of the present disclosure also provides a method for manufacturing a flexible display panel, which includes forming a first flexible substrate layer on a supporting substrate; Forming a dielectric layer on the bottom layer; forming a second flexible substrate layer on the dielectric layer; forming a through hole penetrating the second flexible substrate layer and the dielectric layer; forming wires at least on the sidewall and bottom of the through hole; Forming a planarization layer covering the second flexible substrate layer and the wires; forming a functional element on the planarization layer, the functional element includes a display element, and a plurality of functional elements form an array; peeling off the supporting substrate and removing The first flexible substrate layer has an exposed wire; a pad is formed on the exposed wire; and the control circuit is electrically connected through the pad.

在一个实施例中，如图7和图8所示，柔性显示面板的制作方法包括如下步骤。In one embodiment, as shown in FIG. 7 and FIG. 8, the manufacturing method of the flexible display panel includes the following steps.

首先，形成上述面板，如图7所示的1-7部分，具体过程同上，在此不再赘述。First, the above-mentioned panel is formed, as shown in part 1-7 in Fig. 7. The specific process is the same as the above, and will not be repeated here.

其次，在上述面板上形成阵列层8、发光器件9和盖板10，均采用通常步骤和工艺制作，在此不再赘述。值得说明的是，为实现显示装置的无边框设置，所述发光器件9为电致发光器件，例如Micro-LED或OLED，例如，盖板10包括封装层，本领域技术人员应当根据实际应用场景进行设计以满足实际需求。Secondly, the array layer 8, the light-emitting device 9 and the cover plate 10 are formed on the above-mentioned panel, all of which are made by common steps and processes, which will not be repeated here. It is worth noting that, in order to realize the borderless arrangement of the display device, the light-emitting device 9 is an electroluminescent device, such as Micro-LED or OLED. For example, the cover plate 10 includes an encapsulation layer. Those skilled in the art should base on actual application scenarios. Design to meet actual needs.

再次，剥离所述支撑衬底并去除所述第一柔性衬底层，具体过程同上，在此不再赘述。Once again, the supporting substrate is peeled off and the first flexible substrate layer is removed, and the specific process is the same as the above, and will not be repeated here.

最后，如图8所示，在露出的导线6上形成焊盘12，以及通过所述焊盘12电连接控制电路13，所述控制电路13通过胶层11与介质层粘接以形成柔性显示面板。Finally, as shown in FIG. 8, a bonding pad 12 is formed on the exposed wire 6, and the bonding pad 12 is electrically connected to the control circuit 13, and the control circuit 13 is bonded to the dielectric layer through the adhesive layer 11 to form a flexible display panel.

考虑到柔性显示面板制作过程中所述通孔的形成以及剥离支撑衬底时入射激光对显示面板各膜层的影响，在一个实施例中，所述方法还包括在所述第一柔性衬底层上形成金属层；在所述金属层上形成所述介质层，其中所述通孔被形成为露出所述金属层的部分表面。则所述金属层在制作显示面板的过程中作为刻蚀所述通孔的刻蚀阻挡层以提高所述通孔的刻蚀均匀性，在剥离支撑衬底时将入射的激光反射至第一柔性衬底层2以防止激光影响所述显示面板的其他膜层的性能。Taking into account the formation of the through holes in the manufacturing process of the flexible display panel and the impact of the incident laser on each film layer of the display panel when the supporting substrate is peeled off, in one embodiment, the method further includes setting the first flexible substrate layer A metal layer is formed on the metal layer; the dielectric layer is formed on the metal layer, wherein the through hole is formed to expose a part of the surface of the metal layer. In the process of manufacturing the display panel, the metal layer serves as an etching stop layer for etching the through holes to improve the etching uniformity of the through holes, and reflects the incident laser light to the first when the supporting substrate is peeled off. The flexible substrate layer 2 prevents the laser from affecting the performance of other film layers of the display panel.

在另一个实施例中，所述剥离所述支撑衬底并去除所述第一柔性衬底层进一步包括：通过激光剥离所述支撑衬底；通过第一干法刻蚀工艺去除所述第一柔性衬底层；通过第二干法刻蚀工艺去除所述金属层。例如，当采用小功率(例如22mJ/cm ²)激光剥离支撑衬底时，所述激光烧蚀分离所述第一柔性衬底层和支撑衬底，所述激光烧蚀所述第一柔性衬底层的聚酰亚胺的一部分。通过第一次干法刻蚀工艺去除所述第一柔性衬底层的聚酰亚胺，即在干法刻蚀腔体中通入氧气气体灰化所述聚酰亚胺；然后通过第二次干法刻蚀工艺去除所述金属层，即在干法刻蚀腔体中通入氯气气体，所述氯气气体以等离子体形式轰击所述金属层并由气体循环***带走轰击所得物质。由于金属层的存在，在小功率激光剥离过程中，通过两次干法刻蚀工艺能够实现对所述第一柔性衬底层和金属层的去除，由于金属层存在不同的干法刻蚀条件，当所述金属层刻蚀完成后，刻蚀速率在所述介质层停止，从而避免对第二柔性衬底层进行过刻蚀，实现均匀刻蚀，即对于所述露出的导线和介质层进行平坦化，达到接触面平整的目的。 In another embodiment, the peeling off the support substrate and removing the first flexible substrate layer further includes: peeling off the support substrate by a laser; removing the first flexible substrate by a first dry etching process. Substrate layer; the metal layer is removed by a second dry etching process. For example, when a low-power (for example, 22 mJ/cm ² ) laser is used to lift the supporting substrate, the laser ablation separates the first flexible substrate layer and the supporting substrate, and the laser ablates the first flexible substrate layer Part of the polyimide. The polyimide of the first flexible substrate layer is removed by the first dry etching process, that is, oxygen gas is introduced into the dry etching chamber to ash the polyimide; The dry etching process removes the metal layer, that is, a chlorine gas is introduced into the dry etching chamber, and the chlorine gas bombards the metal layer in the form of plasma and removes the bombarded substances by the gas circulation system. Due to the existence of the metal layer, in the low-power laser lift-off process, the first flexible substrate layer and the metal layer can be removed by two dry etching processes. Because the metal layer has different dry etching conditions, After the metal layer is etched, the etching rate stops at the dielectric layer, thereby avoiding over-etching the second flexible substrate layer and achieving uniform etching, that is, flattening the exposed wires and dielectric layers To achieve the goal of smooth contact surface.

在另一个实施例中，剥离所述支撑衬底并去除所述第一柔性衬底层包括：通过激光剥离所述支撑衬底层、烧蚀所述第一柔性衬底层并产生碳化粉末；通过干法刻蚀工艺轰击所述金属层以去除所述碳化粉末和金属层。例如，当采用大功率激光能量(例如300mJ/cm ²)剥离支撑衬底时，所述金属层能够将入射的激光反射回第一柔性衬底层从而增加了第一柔性衬底层所吸收的激光的能量，从而降低剥离过程中对激光能量的需求；并且将照射的激光反射回第一柔性衬底层的同时，也避免了照射的激光对显示面板的各膜层的影响。大功率激光能量(例如300mJ/cm ²)剥离支撑衬底时烧蚀所述第一柔性衬底层并残留大量碳化粉末，利用干法刻蚀所述金属层以同时清除所述碳化粉末。即在干法刻蚀腔体中通入氯气气体，所述氯气气体以等离子体形式轰击所述金属层和碳化粉末，并由气体循环***带走轰击所得物质，从而实现对所述第一柔性衬底层烧蚀残留的碳化粉末和金属层的清除。由于金属层的干法刻蚀条件与介质层和导线的干法刻蚀条件不同，当所述金属层刻蚀完成后，由于氯气与介质层的二氧化硅和导线例如金属铜导线均不反应，刻蚀速率在所述介质层和通孔处的导线处停止，从而避免对第二柔性衬底层进行过刻蚀，同时对于经干法刻蚀后露出的金属导体和介质层进行平坦化，达到接触面平整的目的。 In another embodiment, peeling off the support substrate and removing the first flexible substrate layer includes: peeling off the support substrate layer by laser, ablating the first flexible substrate layer and generating carbonized powder; The etching process bombards the metal layer to remove the carbonized powder and the metal layer. For example, when a high-power laser energy (for example, 300mJ/cm ² ) is used to peel off the supporting substrate, the metal layer can reflect the incident laser light back to the first flexible substrate layer, thereby increasing the amount of laser light absorbed by the first flexible substrate layer. Energy, thereby reducing the demand for laser energy in the peeling process; and while reflecting the irradiated laser back to the first flexible substrate layer, it also avoids the impact of the irradiated laser on each film layer of the display panel. When the high-power laser energy (for example, 300 mJ/cm ² ) peels off the supporting substrate, the first flexible substrate layer is ablated and a large amount of carbonized powder remains, and the metal layer is dry-etched to remove the carbonized powder at the same time. That is, chlorine gas is introduced into the dry etching chamber, and the chlorine gas bombards the metal layer and carbonized powder in the form of plasma, and the bombarded material is taken away by the gas circulation system, thereby achieving the first flexibility Removal of carbonized powder and metal layer left after ablation of the substrate layer. Since the dry etching conditions of the metal layer are different from the dry etching conditions of the dielectric layer and the wires, when the metal layer is etched, the chlorine gas does not react with the silicon dioxide of the dielectric layer and the wires, such as metal copper wires. , The etching rate stops at the conductors at the dielectric layer and the through holes, so as to avoid over-etching the second flexible substrate layer, and at the same time planarize the exposed metal conductors and dielectric layers after dry etching, To achieve the purpose of smooth contact surface.

本公开的一个实施例还提供一种柔性显示面板，包括柔性衬底层；形成在柔性衬底层第一表面上的介质层；贯通所述柔性衬底层及所述介质层的通孔；至少在所述通孔侧壁及底部形成导线；在所述柔性衬底层与所述第一表面相对的第二表面上形成的覆盖所述第二表面及导线的平坦化层；在所述平坦化层上形成的显示元件的阵列；在所述底部的导线上形成的焊盘；与所述焊盘电连接的控制电路。所述柔性显示面板能够实现无边框设置，为电致发光显示面板，例如Micro-LED或OLED显示面板。An embodiment of the present disclosure also provides a flexible display panel, including a flexible substrate layer; a dielectric layer formed on the first surface of the flexible substrate layer; a through hole penetrating the flexible substrate layer and the dielectric layer; Conducting lines are formed on the sidewalls and bottoms of the through holes; a planarization layer covering the second surface and the conductive lines is formed on a second surface of the flexible substrate layer opposite to the first surface; on the planarization layer An array of display elements formed; pads formed on the wires at the bottom; a control circuit electrically connected to the pads. The flexible display panel can be configured without a frame, and is an electroluminescent display panel, such as a Micro-LED or OLED display panel.

图9为本公开的实施例提供的一种面板的示意图。如图9所示，面板包括柔性衬底BS2，位于柔性衬底BS2的一侧的介质层3以及位于柔性衬底BS2的另一侧的焊盘PD。导线CL通过贯穿柔性衬底BS2和介质层3的过孔H0与焊盘PD相连。图9示出了两条导线CL：第一导线CL1和第二导线CL2，图9示出了两个焊盘PD：第一焊盘PD1和第二焊盘PD2。第一导线CL1与第一焊盘PD1相连，第二导线CL2与第二焊盘PD2相连。柔性衬底BS2可为其他实施例中的第二柔性衬底层5。FIG. 9 is a schematic diagram of a panel provided by an embodiment of the disclosure. As shown in FIG. 9, the panel includes a flexible substrate BS2, a dielectric layer 3 located on one side of the flexible substrate BS2, and a pad PD located on the other side of the flexible substrate BS2. The wire CL is connected to the pad PD through a via H0 penetrating the flexible substrate BS2 and the dielectric layer 3. FIG. 9 shows two wires CL: a first wire CL1 and a second wire CL2, and FIG. 9 shows two pads PD: a first pad PD1 and a second pad PD2. The first wire CL1 is connected to the first pad PD1, and the second wire CL2 is connected to the second pad PD2. The flexible substrate BS2 may be the second flexible substrate layer 5 in other embodiments.

如图9所示，面板还包括薄膜晶体管TFT和显示元件DCP，显示元件DCP与薄膜晶体管TFT相连。薄膜晶体管TFT包括栅极GT、有源层ACT、源极SE和漏极DE。源极SE和漏极DE分别与有源层ACT相连。第一导线 CL1通过第一连接元件CE1与第三连接元件CE3相连，第三连接元件CE3与栅极GT相连。第二导线CL2通过第二连接元件CE2与源极SE相连。漏极DE通过第四连接元件CE4与显示元件DCP相连。显示元件DCP包括第一电极ET1、发光功能层EL和第二电极ET2，发光功能层EL位于第一电极ET1和第二电极ET2之间。第一电极ET1和第二电极ET2之一为阴极，第一电极ET1和第二电极ET2之另一为阳极。第一电极ET1通过第四连接元件CE4与漏极DE相连。图9中仅示出了一个TFT，面板还可以包括其他的TFT。As shown in FIG. 9, the panel further includes a thin film transistor TFT and a display element DCP, and the display element DCP is connected to the thin film transistor TFT. The thin film transistor TFT includes a gate electrode GT, an active layer ACT, a source electrode SE, and a drain electrode DE. The source electrode SE and the drain electrode DE are respectively connected to the active layer ACT. The first wire CL1 is connected to the third connection element CE3 through the first connection element CE1, and the third connection element CE3 is connected to the gate GT. The second wire CL2 is connected to the source SE through a second connecting element CE2. The drain DE is connected to the display element DCP through the fourth connecting element CE4. The display element DCP includes a first electrode ET1, a light emitting function layer EL, and a second electrode ET2, and the light emitting function layer EL is located between the first electrode ET1 and the second electrode ET2. One of the first electrode ET1 and the second electrode ET2 is a cathode, and the other of the first electrode ET1 and the second electrode ET2 is an anode. The first electrode ET1 is connected to the drain electrode DE through a fourth connection element CE4. Only one TFT is shown in FIG. 9, and the panel may also include other TFTs.

图9还示出了第一平坦化层PLN1、栅极绝缘层GI、钝化层PVX、层间介电层ILD、第二平坦化层PLN2、黑矩阵BM、树脂层RS、薄膜封装层TFE和盖板CV。例如，栅极绝缘层GI、钝化层PVX和层间介电层ILD可采用氧化硅、氮化硅、氮氧化硅等无机绝缘材料。第一平坦化层PLN1、第二平坦化层PLN2可采用有机绝缘材料。树脂层RS可采用树脂。FIG. 9 also shows the first planarization layer PLN1, the gate insulating layer GI, the passivation layer PVX, the interlayer dielectric layer ILD, the second planarization layer PLN2, the black matrix BM, the resin layer RS, and the thin film encapsulation layer TFE. And cover CV. For example, the gate insulating layer GI, the passivation layer PVX, and the interlayer dielectric layer ILD can be made of inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride. The first planarization layer PLN1 and the second planarization layer PLN2 can be made of organic insulating materials. Resin can be used for the resin layer RS.

图9还示出了焊盘绑定基板(bonding pad base)BPB，焊盘绑定基板BPB与焊盘PD相连。例如，焊盘绑定基板BPB包括上述的控制电路13。例如，焊盘绑定基板BPB包括多个引脚以分别与多个导线CL相连，以分别向多个导线CL传输信号，但不限于此。例如，不同的焊盘PD可被分别输入不同的信号。例如，多个焊盘PD可被分别输入多个信号。FIG. 9 also shows a bonding pad base BPB, and the bonding pad base BPB is connected to the pad PD. For example, the pad bonding substrate BPB includes the control circuit 13 described above. For example, the pad bonding substrate BPB includes a plurality of pins to be connected to the plurality of wires CL to respectively transmit signals to the plurality of wires CL, but it is not limited thereto. For example, different pads PD may be inputted with different signals. For example, multiple pads PD may be input with multiple signals, respectively.

例如，如图9所示，栅极GT、第一连接元件CE1和第二连接元件CE2位于同一层，均位于第一平坦化层PLN1上，可由同一材料经同一构图工艺形成，并且，栅极GT、第一连接元件CE1和第二连接元件CE2中每两个彼此绝缘。第一连接元件CE1通过贯穿第一平坦化层PLN1的过孔与第一导线CL1相连，第二连接元件CE2通过贯穿第一平坦化层PLN1的过孔与第二导线CL2相连。在栅极GT、第一连接元件CE1和第二连接元件CE2上设有栅极绝缘层GI。在栅极绝缘层GI上设置有源层ACT，在有源层ACT上设置钝化层PVX，在钝化层PVX上设置源极SE、漏极DE和第三连接元件CE3，源极SE、漏极DE和第三连接元件CE3可由同一材料经同一构图工艺形成。源极SE的一端通过贯穿钝化层PVX的过孔与有源层ACT相连，源极SE的另一端通过贯穿钝化层PVX和栅极绝缘层GI的过孔与第二连接元件CE2相连。漏极DE通过贯穿钝化层PVX的过孔与有源层ACT相连。第三连接元件CE3的一端通过贯穿钝化层PVX和栅极绝缘层GI的过孔与有源层ACT相连，第三连接元件CE3的另一端通过贯穿钝化层PVX和栅极绝缘层GI的过孔与第一连接元件CE1相连。在源极SE、漏极DE和第三连接元件CE3上设置层间介电层ILD，在层间介电层ILD上设置第四连接元件CE4，第四连接元件CE4通过贯穿层间介电层ILD的过孔与漏极DE相连。在层间介电层ILD上设置第二平坦化层PLN2，在第二平坦化层PLN2上形成显示元件DCP。显示元件DCP通过贯穿第二平坦化层PLN2的过孔与第四连接元件CE4相连。For example, as shown in FIG. 9, the gate GT, the first connection element CE1, and the second connection element CE2 are located on the same layer, are all located on the first planarization layer PLN1, and can be formed from the same material through the same patterning process, and the gate Every two of the GT, the first connection element CE1 and the second connection element CE2 are insulated from each other. The first connection element CE1 is connected to the first conductive line CL1 through a via hole that penetrates the first planarization layer PLN1, and the second connection element CE2 is connected to the second conductive line CL2 through a via hole that penetrates the first planarization layer PLN1. A gate insulating layer GI is provided on the gate GT, the first connection element CE1 and the second connection element CE2. An active layer ACT is provided on the gate insulating layer GI, a passivation layer PVX is provided on the active layer ACT, a source SE, a drain DE and a third connection element CE3 are provided on the passivation layer PVX, the source SE, The drain electrode DE and the third connection element CE3 may be formed of the same material through the same patterning process. One end of the source electrode SE is connected to the active layer ACT through a via hole penetrating the passivation layer PVX, and the other end of the source electrode SE is connected to the second connecting element CE2 through a via hole penetrating the passivation layer PVX and the gate insulating layer GI. The drain electrode DE is connected to the active layer ACT through a via hole penetrating the passivation layer PVX. One end of the third connecting element CE3 is connected to the active layer ACT through a via hole penetrating the passivation layer PVX and the gate insulating layer GI, and the other end of the third connecting element CE3 is connected to the active layer ACT through a hole penetrating the passivation layer PVX and the gate insulating layer GI. The via is connected to the first connecting element CE1. An interlayer dielectric layer ILD is provided on the source electrode SE, the drain electrode DE, and the third connecting element CE3, a fourth connecting element CE4 is provided on the interlayer dielectric layer ILD, and the fourth connecting element CE4 passes through the interlayer dielectric layer. The via hole of the ILD is connected to the drain DE. A second planarization layer PLN2 is provided on the interlayer dielectric layer ILD, and a display element DCP is formed on the second planarization layer PLN2. The display element DCP is connected to the fourth connection element CE4 through a via hole penetrating the second planarization layer PLN2.

图9所示的面板为显示面板，具有窄边框。The panel shown in Figure 9 is a display panel with a narrow frame.

例如，本公开的实施例中，金属层在制作过程中作为牺牲层，具有金属层的面板可作为显示面板的中间产品。For example, in the embodiments of the present disclosure, the metal layer is used as a sacrificial layer during the manufacturing process, and the panel with the metal layer can be used as an intermediate product of the display panel.

本公开的一个实施例还提供一种显示装置，包括上述柔性显示面板。An embodiment of the present disclosure also provides a display device including the above-mentioned flexible display panel.

本公开的实施例针对目前存在的问题，制定一种面板及制作方法、柔性显示面板的制作方法、柔性显示面板和显示装置，通过形成在支撑衬底上的第一柔性衬底层和介质层，使得在剥离所述支撑衬底并去除第一柔性衬底层的过程中避免过刻蚀，进一步通过中间层(金属层)实现对介质层的均匀刻蚀，从而有效提高第二柔性衬底上的通孔中导线的导电性能，使得导线能够与控制电路/焊盘绑定基板正常接触，进而提高显示装置的显示效果。In view of the existing problems, the embodiments of the present disclosure formulate a panel and a manufacturing method, a manufacturing method of a flexible display panel, a flexible display panel, and a display device. Through a first flexible substrate layer and a dielectric layer formed on a supporting substrate, This prevents over-etching during the process of peeling off the supporting substrate and removing the first flexible substrate layer, and further realizes uniform etching of the dielectric layer through the intermediate layer (metal layer), thereby effectively improving the The conductive properties of the wires in the through holes enable the wires to be in normal contact with the control circuit/pad binding substrate, thereby improving the display effect of the display device.

以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present disclosure. It should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

一种面板的制作方法，包括：A method for manufacturing a panel includes:

在支撑衬底上形成第一柔性衬底层；Forming a first flexible substrate layer on the supporting substrate;

在所述第一柔性衬底层上形成介质层；Forming a dielectric layer on the first flexible substrate layer;

在所述介质层上形成第二柔性衬底层；Forming a second flexible substrate layer on the dielectric layer;

形成贯通所述第二柔性衬底层及所述介质层的通孔；Forming a through hole penetrating the second flexible substrate layer and the dielectric layer;

至少在所述通孔侧壁及底部形成导线；以及Forming wires at least on the sidewall and bottom of the through hole; and

剥离所述支撑衬底并去除所述第一柔性衬底层以露出所述导线。Peel off the support substrate and remove the first flexible substrate layer to expose the wires.
根据权利要求1所述的方法，还包括：The method according to claim 1, further comprising:

在所述第一柔性衬底层和所述介质层之间形成金属层；Forming a metal layer between the first flexible substrate layer and the dielectric layer;

其中，所述通孔被形成为露出所述金属层的部分表面。Wherein, the through hole is formed to expose a part of the surface of the metal layer.
根据权利要求2所述的方法，其中，剥离所述支撑衬底并去除所述第柔性衬底层包括：The method of claim 2, wherein peeling off the supporting substrate and removing the second flexible substrate layer comprises:

通过激光剥离所述支撑衬底；Peeling off the supporting substrate by laser;

通过第一干法刻蚀工艺去除所述第一柔性衬底层；以及Removing the first flexible substrate layer through a first dry etching process; and

通过第二干法刻蚀工艺去除所述金属层。The metal layer is removed by a second dry etching process.
根据权利要求3所述的方法，其中，所述第一干法刻蚀工艺和所述第干法刻蚀工艺的刻蚀条件不同。3. The method of claim 3, wherein the etching conditions of the first dry etching process and the second dry etching process are different.
根据权利要求4所述的方法，其中，所述第一干法刻蚀工艺和所述第干法刻蚀工艺采用的刻蚀气体不同。4. The method of claim 4, wherein the first dry etching process and the second dry etching process use different etching gases.
根据权利要求5所述的方法，其中，所述第一干法刻蚀工艺的刻蚀气包括氧气，所述第二干法刻蚀工艺的刻蚀气体包括等离子体形式的氯气。The method of claim 5, wherein the etching gas of the first dry etching process includes oxygen, and the etching gas of the second dry etching process includes chlorine gas in the form of plasma.
根据权利要求2所述的方法，其中，剥离所述支撑衬底并去除所述第柔性衬底层包括：The method of claim 2, wherein peeling off the supporting substrate and removing the second flexible substrate layer comprises:

通过激光剥离所述支撑衬底、烧蚀所述第一柔性衬底层并产生碳化粉末；Peeling off the support substrate by a laser, ablating the first flexible substrate layer and generating carbonized powder;

通过干法刻蚀工艺轰击所述金属层以去除所述碳化粉末和所述金属层。The metal layer is bombarded by a dry etching process to remove the carbonized powder and the metal layer.
根据权利要求1-7任一项所述的方法，其中，所述介质层的材料包括机非金属材料。The method according to any one of claims 1-7, wherein the material of the dielectric layer comprises an organic non-metallic material.
根据权利要求1-8任一项所述的方法，其中，所述介质层的材料包括二氧化硅。The method according to any one of claims 1-8, wherein the material of the dielectric layer comprises silicon dioxide.
根据权利要求1-9任一项所述的方法，其中，所述第一柔性衬底层和所述第二柔性衬底层的材料均包括有机材料，所述金属层的材料包括Mo。9. The method according to any one of claims 1-9, wherein the materials of the first flexible substrate layer and the second flexible substrate layer both comprise organic materials, and the material of the metal layer comprises Mo.
根据权利要求1-10任一项所述的方法，还包括形成平坦化层以及在所述平坦化层上形成功能元件，其中，所述平坦化层覆盖所述第二柔性衬底层以及所述导线，所述功能元件与所述导线相连。The method according to any one of claims 1-10, further comprising forming a planarization layer and forming a functional element on the planarization layer, wherein the planarization layer covers the second flexible substrate layer and the Wire, the functional element is connected to the wire.
根据权利要求11所述的方法，其中，所述功能元件包括显示元件和触控元件至少之一。The method according to claim 11, wherein the functional element includes at least one of a display element and a touch element.
根据权利要求1-12任一项所述的方法，还包括在所述介质层的设置所述第二柔性衬底层的相反侧设置焊盘，其中，所述焊盘与所述导线相连。The method according to any one of claims 1-12, further comprising disposing a pad on the opposite side of the dielectric layer where the second flexible substrate layer is disposed, wherein the pad is connected to the wire.
根据权利要求13所述的方法，其中，在所述焊盘的远离所述导线的一侧设置有焊盘绑定基板，所述焊盘绑定基板和所述焊盘相连。The method according to claim 13, wherein a pad binding substrate is provided on a side of the pad away from the wire, and the pad binding substrate is connected to the pad.
一种面板，包括：A panel including:

介质层；Dielectric layer

第一柔性衬底层，位于所述介质层上；The first flexible substrate layer is located on the dielectric layer;

通孔，贯通所述第一柔性衬底层及所述介质层；以及A through hole penetrates the first flexible substrate layer and the dielectric layer; and

导线，至少形成在所述通孔的侧壁及底部。The wire is formed at least on the sidewall and bottom of the through hole.
根据权利要求15所述的面板，其中，所述介质层采用无机非金属材料，所述第一柔性衬底层采用有机材料。15. The panel according to claim 15, wherein the dielectric layer is made of inorganic non-metallic materials, and the first flexible substrate layer is made of organic materials.
根据权利要求15或16所述的面板，其中，所述介质层的材料包括二氧化硅。The panel according to claim 15 or 16, wherein the material of the dielectric layer includes silicon dioxide.
根据权利要求15所述的面板，还包括：The panel according to claim 15, further comprising:

焊盘，位于所述介质层的设置所述第一柔性衬底层的相反侧，其中，所述焊盘与所述导线相连。The pad is located on the opposite side of the dielectric layer where the first flexible substrate layer is provided, wherein the pad is connected to the wire.
根据权利要求18所述的面板，其中，在所述焊盘的远离所述导线的一侧设置有焊盘绑定基板，所述焊盘绑定基板和所述焊盘相连。The panel according to claim 18, wherein a pad binding substrate is provided on a side of the pad away from the wire, and the pad binding substrate is connected to the pad.
根据权利要求15-19任一项所述的面板，还包括第二柔性衬底层，其中，所述第二柔性衬底层位于所述介质层的设置所述第一柔性衬底层的相反侧。The panel according to any one of claims 15-19, further comprising a second flexible substrate layer, wherein the second flexible substrate layer is located on the opposite side of the dielectric layer where the first flexible substrate layer is provided.
根据权利要求20所述的面板，还包括：The panel according to claim 20, further comprising:

金属层，形成在所述第一柔性衬底层和所述介质层之间。A metal layer is formed between the first flexible substrate layer and the dielectric layer.
根据权利要求21所述的面板，所述导线与所述金属层接触。The panel according to claim 21, the wire is in contact with the metal layer.
根据权利要求21或22所述的面板，其中，所述金属层与所述第二柔性衬底层接触，所述金属层与所述介质层接触。The panel according to claim 21 or 22, wherein the metal layer is in contact with the second flexible substrate layer, and the metal layer is in contact with the dielectric layer.
根据权利要求21-23任一项所述的面板，其中，所述金属层的材料包括Mo。The panel according to any one of claims 21-23, wherein the material of the metal layer includes Mo.
根据权利要求20-24任一项所述的面板，其中，所述第一柔性衬底层和所述第二柔性衬底层的材料均包括有机材料。The panel according to any one of claims 20-24, wherein the materials of the first flexible substrate layer and the second flexible substrate layer both comprise organic materials.
根据权利要求20-25任一项所述的面板，还包括平坦化层以及位于所述平坦化层上的功能元件，其中，所述平坦化层覆盖所述第二柔性衬底层以及所述导线，并且所述功能元件与所述导线相连。The panel according to any one of claims 20-25, further comprising a planarization layer and functional elements located on the planarization layer, wherein the planarization layer covers the second flexible substrate layer and the wires , And the functional element is connected to the wire.
根据权利要求26所述的面板，其中，所述功能元件包括显示元件和触控元件至少之一。The panel according to claim 26, wherein the functional element includes at least one of a display element and a touch element.
一种显示装置，包括权利要求15-27任一项所述的面板。A display device comprising the panel according to any one of claims 15-27.