WO2020164316A1 - 显示装置及其制备方法 - Google Patents

显示装置及其制备方法 Download PDF

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Publication number
WO2020164316A1
WO2020164316A1 PCT/CN2019/128437 CN2019128437W WO2020164316A1 WO 2020164316 A1 WO2020164316 A1 WO 2020164316A1 CN 2019128437 W CN2019128437 W CN 2019128437W WO 2020164316 A1 WO2020164316 A1 WO 2020164316A1
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Prior art keywords
pattern recognition
light
display panel
shielding layer
display device
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PCT/CN2019/128437
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English (en)
French (fr)
Inventor
杨小燕
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/966,810 priority Critical patent/US11636703B2/en
Publication of WO2020164316A1 publication Critical patent/WO2020164316A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14678—Contact-type imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • a display device in one aspect, has a display area, and the display area includes a pattern recognition area.
  • the display device includes a display panel, a light-shielding layer arranged on a side of the display panel opposite to a light-emitting side thereof, and a pattern recognition structure arranged on a side of the light-shielding layer away from the display panel.
  • the light shielding layer includes a plurality of first through holes; the pattern recognition structure is located in the pattern recognition area, the pattern recognition structure includes a plurality of pattern recognition devices, the plurality of pattern recognition devices and the plurality of first The through holes are set in one-to-one correspondence.
  • the display device further includes a protective layer disposed on a side of the light shielding layer away from the display panel.
  • the display device further includes a transparent glue layer disposed between the display panel and the light shielding layer.
  • the size of the pattern recognition area is smaller than the size of the display area.
  • the light-shielding layer further includes a plurality of second through holes, and the plurality of second through holes are located in an area of the display area excluding the pattern recognition area.
  • the size of the pattern recognition area is equal to the size of the display area.
  • the display panel includes an array substrate, the array substrate includes a substrate and a thin film transistor disposed on the substrate, the thin film transistor includes an active layer, and the material of the active layer includes Silicon crystal.
  • the thin film transistor is a top-gate thin film transistor.
  • the material of the light shielding layer includes metal or resin.
  • the plurality of pattern recognition devices and the plurality of first through holes are all arranged in an array.
  • the display panel is a flexible display panel.
  • a method for manufacturing a display device including: preparing a display panel; disposing a light-shielding layer on a side of the display panel opposite to a light-emitting surface, the light-shielding layer including a plurality of first through holes; A pattern recognition structure is provided on the side of the light shielding layer away from the display panel; the pattern recognition structure is located in the pattern recognition area of the display device, the pattern recognition structure includes a plurality of pattern recognition devices, and the plurality of pattern recognition devices And the plurality of first through holes are arranged in one-to-one correspondence.
  • the disposing a light-shielding layer on the side of the display panel opposite to the light-emitting surface includes: providing a protective layer, and preparing the light-shielding layer on one side of the protective layer by a patterning process; The side of the light-shielding layer away from the protective layer is coated with a transparent adhesive layer; the protective layer with the light-shielding layer and the transparent adhesive layer is attached to the side of the display panel opposite to the light-emitting surface.
  • 3A is a structural diagram of a first through hole provided by some embodiments of the present disclosure.
  • 3B is a structural diagram of another first through hole provided by some embodiments of the present disclosure.
  • FIG. 6 is a structural diagram of a substrate provided by some embodiments of the present disclosure.
  • the principle of optical pattern recognition is that the light reflected by the object to be detected (for example, a finger) passes through the first through hole 211 and is imaged on the pattern recognition device 221. Due to the different intensities of the light reflected by the valleys and ridges of the fingers, Therefore, the light intensity of the light reflected by the valley and ridge of the finger illuminating the pattern recognition device 221 is also different.
  • the pattern recognition device 221 converts light of different intensities into electric signals of different intensities, and the pattern recognition circuit performs fingerprints based on the electric signals. Recognition.
  • the optical fingerprint recognition technology when used for fingerprint recognition, in order to improve the accuracy of fingerprint recognition, the principle of small hole imaging can be adopted, and a light-shielding layer with light-transmitting holes is provided on the optical sensor.
  • the display device can not only be used for fingerprint recognition, but also can be used for pattern recognition of other objects to be detected with patterns.
  • the other object to be detected may be the palm of the hand, so that the palmprint can be recognized by the display device.
  • some embodiments of the present disclosure are described with the object to be detected as a finger and fingerprint recognition.
  • the specific structure of the pattern recognition structure 22 is not limited, as long as the pattern recognition structure 22 can convert an optical signal into an electrical signal.
  • the pattern recognition structure 22 includes at least one of a photosensitive sensor, a photoelectric sensor, and the like.
  • the arrangement of the multiple pattern recognition devices 221 in the pattern recognition structure 22 is not limited.
  • the arrangement position of the pattern recognition device 221 only satisfies: when a finger touches any position of the pattern recognition area of the display device, fingerprint detection can be performed.
  • two adjacent pattern recognition devices 221 may be arranged adjacent to each other (that is, there is no space between two adjacent pattern recognition devices); or, as shown in FIG. 2, two adjacent pattern recognition devices 221 may also be arranged at intervals (There is a gap between two adjacent pattern recognition devices).
  • every two adjacent pattern recognition devices 221 in the pattern recognition structure 22 are arranged adjacently; another example, every two adjacent pattern recognition devices 221 in the pattern recognition structure 22 are arranged at intervals; another example, the pattern recognition structure 22 is The two adjacent pattern recognition devices 221 may be arranged adjacently or at intervals.
  • the pattern recognition devices 221 are arranged in an array; or, the pattern recognition devices 221 are arranged randomly. Some embodiments of the present disclosure do not limit this, as long as the pattern recognition area can perform pattern recognition.
  • the shape of the orthographic projection of the first through hole 211 on the display panel is not limited. As long as the light passing through one first through hole 211, the light that is directly opposite to the first through hole 211 can finally be irradiated.
  • the optical sensor unit 221 is sufficient.
  • the shape of the orthographic projection of the first through hole 211 on the display panel is a circle (as shown in FIG. 3A), a rectangle (as shown in FIG. 3B), or an ellipse (as shown in FIG. 3C).
  • the size of the first through hole 211 is not limited. Specifically, the size of the first through hole 211 is related to the thickness of the display panel, the distance between the light shielding layer 21 and the pattern recognition structure 22, the size of the pattern recognition device 221, and the shape of the first through hole 211.
  • the shape of the pattern recognition device 221 is a circle, and the diameter of the pattern recognition device 221 is 1-7 ⁇ m.
  • the diameter of the pattern recognition device 221 is 1 ⁇ m, 6 ⁇ m, and 7 ⁇ m.
  • the plurality of first through holes 211 and the plurality of pattern recognition devices 221 are arranged directly opposite one another.
  • one first through hole 211 corresponds to one pattern recognition device 221
  • the center of the first through hole 211 and the center of the pattern recognition device 221 corresponding to the first through hole 211 are on a vertical line.
  • the material of the light shielding layer 21 is not limited, as long as the light shielding layer 21 can perform a light shielding function.
  • the material of the light shielding layer 21 may be metal; for another example, the material of the light shielding layer 21 may also be resin (for example, the resin is a resin including carbon).
  • the size of the pattern recognition area BB is equal to the size of the display area AA; or, the size of the pattern recognition area BB is smaller than the size of the display area AA.
  • the display area AA of the display device can be used for fingerprint recognition.
  • the self-luminous display panel may be top-emitting or bottom-emitting.
  • the light shielding layer 21 and the pattern recognition structure 22 are arranged on the non-display side opposite to the display side in the self-luminous display panel.
  • some embodiments of the present disclosure provide a display device by arranging the light shielding layer 21 and the pattern recognition structure 22 outside the display panel.
  • the preparation process of the display panel can be simplified; on the other hand, the process of preparing the display panel and the process of preparing the light-shielding layer 21 and the pattern recognition structure 22 can be performed in different manufacturing processes, that is, when the display panel is prepared, the light-shielding can be prepared at the same time.
  • the layer 21 and the pattern recognition structure 22, and finally the light-shielding layer 21 and the pattern recognition structure 22 prepared as a whole are attached to the display panel to save the preparation time of the display device and reduce the adhesion of impurities.
  • the distance between the light shielding layer 21 and the conductive structure in the thin film transistor 12 is farther. Therefore, the light shielding layer 21 can be prevented from interacting with the conductive structure in the thin film transistor 12 to a certain extent, and the overall display drift of the thin film transistor 12 due to charge accumulation can be avoided, thereby improving the display effect of the display device.
  • the shape and size of the second through hole 212 may be the same as the shape and size of the first through hole 211; or, the shape and size of the second through hole 212 are different from the shape and size of the first through hole 211. Some disclosed embodiments do not limit this.
  • the first through hole 211 corresponds to the pattern recognition device 221 one-to-one, and there is no need to provide the second through hole 212. . At this time, the first through hole 211 can be used to dissipate the entire display device. It should be noted that, for clarity of illustration, the size of the pattern recognition area BB in FIG. 5 is slightly smaller than the size of the display area AA. In fact, the sizes of the two are the same.
  • the flexible display panel is usually prepared on a rigid substrate. Therefore, the longer the preparation time of the flexible display panel, the more impurities scattered in the display panel and impurities attached from the rigid substrate.
  • the light-shielding layer 21 is arranged outside the flexible display panel, so that the light-shielding layer 21 and the flexible display panel are independent of each other, which can reduce the manufacturing time of the flexible display panel, thereby reducing the adhesion of impurities to the display panel.
  • the display device further includes a transparent glue layer 31, which is disposed between the display panel and the light shielding layer.
  • the transparent adhesive layer 31 is configured to fix the light shielding layer 21 and the protective layer 30 on the display panel 10.
  • the material of the transparent adhesive layer 31 may be pressure sensitive adhesive (PSA), or the material of the transparent adhesive layer 31 may also be optically clear adhesive (OCA).
  • some embodiments of the present disclosure do not limit the material of the protective layer 30, as long as the protective layer 30 can be used to protect the flexible display panel when the display panel 10 is a flexible display panel.
  • the material of the protective layer 30 may be polyethylene terephthalate (PET).
  • PET polyethylene terephthalate
  • Some embodiments of the present disclosure also provide a method for manufacturing a display device, as shown in FIGS. 1 and 7, including: preparing a display panel; and disposing a light-shielding layer 21 on the side of the display panel 10 opposite to the light-emitting surface thereof. It includes a plurality of first through holes 211; a pattern recognition structure 22 is arranged on the side of the light shielding layer away from the display panel; the pattern recognition structure 22 is located in the pattern recognition area of the display device, and the pattern recognition structure includes a plurality of pattern recognition devices 221.
  • the identification device 221 and the plurality of first through holes 211 are arranged in one-to-one correspondence.
  • disposing the light-shielding layer 21 on the side of the display panel 10 opposite to the light-emitting surface includes: providing a protective layer 30, and preparing the light-shielding layer 21 on one side of the protective layer by a patterning process Coat the transparent adhesive layer 31 on the side of the light shielding layer 21 away from the protective layer 30; attach the protective layer 30 with the light shielding layer 21 and the transparent adhesive layer 31 to the side of the display panel 10 opposite to the light emitting surface.
  • the transparent adhesive layer 31 is configured to fix the light shielding layer 21 and the protective layer 30 on the display panel 10.
  • the material of the transparent adhesive layer 31 may be pressure sensitive adhesive (PSA), or the material of the transparent adhesive layer 31 may also be optically clear adhesive (OCA).
  • the specific structure of the pattern recognition structure 22 is not limited, as long as the pattern recognition structure 22 can convert an optical signal into an electrical signal.
  • the pattern recognition structure 22 includes at least one of a photosensitive sensor, a photoelectric sensor, and the like.
  • the arrangement of the plurality of pattern recognition devices 221 in the pattern recognition structure 22 is not limited, and the arrangement position thereof only satisfies: when a finger touches any position of the pattern recognition area of the display device, fingerprint detection can be performed.
  • two adjacent pattern recognition devices 221 may be arranged adjacent to each other (that is, there is no space between two adjacent pattern recognition devices); or, as shown in FIG. 2, two adjacent pattern recognition devices 221 may also be arranged at intervals (There is a gap between two adjacent pattern recognition devices).
  • the pattern recognition devices 221 are arranged in an array; or, the pattern recognition devices 221 are arranged randomly. Some embodiments of the present disclosure do not limit this, as long as the pattern recognition area can perform pattern recognition.
  • the shape of the orthographic projection of the first through hole 211 on the display panel is not limited. As long as the light passing through one first through hole 211, the light that is directly opposite to the first through hole 211 can finally be irradiated.
  • the optical sensor unit 221 is sufficient.
  • the shape of the orthographic projection of the first through hole 211 on the display panel is a circle (as shown in FIG. 3A), a rectangle (as shown in FIG. 3B), or an ellipse (as shown in FIG. 3C).
  • the size of the first through hole 211 is not limited. Specifically, the size of the first through hole 211 is related to the thickness of the display panel, the distance between the light shielding layer 21 and the pattern recognition structure 22, the size of the pattern recognition device 221, and the shape of the first through hole 211.
  • the plurality of first through holes 211 and the plurality of pattern recognition devices 221 are arranged directly opposite one another.
  • one first through hole 211 corresponds to one pattern recognition device 221
  • the center of the first through hole 211 and the center of the pattern recognition device 221 corresponding to the first through hole 211 are on a vertical line.
  • the material of the light shielding layer 21 may be metal; for another example, the material of the light shielding layer 21 may also be resin (for example, the resin is a resin including carbon).
  • the size of the pattern recognition area BB is equal to the size of the display area AA; or, the size of the pattern recognition area BB is smaller than the size of the display area AA.
  • the display panel may be a self-luminous display panel.
  • the display panel 10 is a flexible display panel.
  • the light shielding layer 21 and the pattern recognition structure 22 constitute at least a part of the pattern recognition component 20.
  • the display device further includes a protective layer 30 between the light shielding layer 21 and the pattern recognition structure 22.

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  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

一种显示装置，显示装置具有显示区，显示区包括纹路识别区；显示装置包括：显示面板；设置于显示面板的与其出光侧相对的一侧的遮光层以及设置于所述遮光层远离所述显示面板一侧的纹路识别结构。遮光层包括多个第一通孔；纹路识别结构位于纹路识别区，纹路识别结构包括多个纹路识别器件，多个纹路识别器件与多个第一通孔一一对应设置。

Description

显示装置及其制备方法
本申请要求于2019年2月15日提交的、申请号为201910122673.7的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示装置及其制备方法。
背景技术
随着有机发光二极管(Organic Light-Emitting Diode，简称OLED)的发展速度越来越快，对其功能的开发也越来越多。随着OLED显示面板逐渐从宽边框向窄边框甚至全面屏方向发展，指纹识别技术也逐渐发展成屏下指纹识别。
发明内容
一方面，提供一种显示装置，所述显示装置具有显示区，所述显示区包括纹路识别区。所述显示装置包括：显示面板、设置于所述显示面板的与其出光侧相对的一侧的遮光层以及设置于所述遮光层远离所述显示面板一侧的纹路识别结构。所述遮光层包括多个第一通孔；所述纹路识别结构位于所述纹路识别区，所述纹路识别结构包括多个纹路识别器件，所述多个纹路识别器件与所述多个第一通孔一一对应设置。
在一些实施例中，所述显示装置还包括保护层，所述保护层设置于所述遮光层远离所述显示面板的一侧。
在一些实施例中，所述纹路识别结构设置于所述保护层远离所述遮光层的一侧。
在一些实施例中，所述显示装置还包括透明胶层，所述透明胶层设置于所述显示面板与所述遮光层之间。
在一些实施例中，所述纹路识别区的尺寸小于所述显示区的尺寸。所述遮光层还包括多个第二通孔，所述多个第二通孔位于所述显示区中除所述纹路识别区以外的区域。
在一些实施例中，所述纹路识别区的尺寸等于所述显示区的尺寸。
在一些实施例中，所述显示面板包括阵列基板，所述阵列基板包括衬底和设置于所述衬底上的薄膜晶体管，所述薄膜晶体管包括有源层，所述有源层的材料包括硅晶体。
在一些实施例中，所述薄膜晶体管为顶栅型薄膜晶体管。
在一些实施例中，所述遮光层的材料包括金属或者树脂。
在一些实施例中，所述多个纹路识别器件和所述多个第一通孔均呈阵列式排布。
在一些实施例中，所述显示面板为柔性显示面板。
另一方面，提供一种显示装置的制备方法，包括：制备显示面板；在所述显示面板的与其出光面相对的一侧设置遮光层，所述遮光层包括多个第一通孔；在所述遮光层远离所述显示面板的一侧设置纹路识别结构；所述纹路识别结构位于所述显示装置的纹路识别区，所述纹路识别结构包括多个纹路识别器件，所述多个纹路识别器件与所述多个第一通孔一一对应设置。
在一些实施例中，所述在所述显示面板的与其出光面相对的一侧设置遮光层，包括：提供保护层，采用构图工艺在所述保护层的一侧制备所述遮光层；在所述遮光层远离所述保护层的一侧涂覆透明胶层；将带有所述遮光层和所述透明胶层的保护层贴附于所述显示面板的与其出光面相对的一侧。
附图说明
为了更清楚地说明本公开中的技术方案，下面将对本公开一些实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例的附图，对于本领域普通技术人员来讲，还可以根据这些附图获得其他的附图。此外，以下描述中的附图可以视作示意图，并非对本公开实施例所涉及的产品的实际尺寸、方法的实际流程等的限制。
图1为本公开一些实施例提供的一种显示装置的结构图；
图2为本公开一些实施例提供的一种第一通孔与纹路识别器件的位置关系图；
图3A为本公开一些实施例提供的一种第一通孔的结构图；
图3B为本公开一些实施例提供的另一种第一通孔的结构图；
图3C为本公开一些实施例提供的再一种第一通孔的结构图；
图4本公开一些实施例提供的一种遮光层的俯视图；
图5本公开一些实施例提供的另一种遮光层的俯视图；
图6为本公开一些实施例提供的一种衬底的结构图；
图7为本公开一些实施例提供的一种显示装置的结构图。
具体实施方式
下面将结合附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开所提供的实施例，本领域普通技术人员所获得的所有其他实施例，都属于本公开保护的范围。
除非上下文另有要求，否则，在整个说明书和权利要求书中，术语“包括(comprise)”及其其他形式例如第三人称单数形式“包括(comprises)”和现在分词形式“包括(comprising)”被解释为开放、包含的意思，即为“包含，但不限于”。在说明书的描述中，术语“一个实施例(one embodiment)”、“一些实施例(some embodiments)”、“示例性实施例(exemplary embodiments)”、“示例(example)”、“特定示例(specific example)”或“一些示例(some examples)”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本公开的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外，所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。
以下，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开实施例的描述中，除非另有说明，“多个”的含义是两个或两个以上。
“A、B和C中的至少一个”与“A、B或C中的至少一个”具有相同含义，均包括以下A、B和C的组合：仅A，仅B，仅C，A和B的组合，A和C的组合，B和C的组合，及A、B和C的组合。
本公开一些实施例提供一种显示装置，显示装置具有显示区，显示区包括纹路识别区。如图1所示，显示装置包括显示面板10、设置于显示面板10的与其出光侧相对的一侧的遮光层21、以及设置于遮光层21远离显示面板10一侧的纹路识别结构22。纹路识别结构22设置于显示装置的纹路识别区，纹路识别区位于显示装置的显示区内。如图2所示，遮光层21包括多个第一通孔211，纹路识别结构22包括多个纹路识别器件221，多个第一通孔211与多个纹路识别器件221一一正对设置。
在一些示例中，光学式纹路识别的原理是：待检测物(例如手指)反射的光经过第一通孔211成像于纹路识别器件221上，由于手指的谷、脊反射的光的强度不同，因此，经手指的谷、脊反射的光线照射到纹路 识别器件221上的光强也不相同，纹路识别器件221将不同强度的光线转化为不同强度的电信号，纹路识别电路根据电信号进行指纹识别。
其中，采用光学式指纹识别技术进行指纹识别时，为了提高指纹识别的精确度，可采用小孔成像原理，在光学传感器上设置一层具有透光孔的遮光层。
需要说明的是，所述显示装置不但可以用于指纹识别，还可以对其他具有纹路的待检测物进行纹路识别。例如，其他待检测物可以是手掌，以利用所述显示装置对掌纹进行纹路识别。为了方便说明，本公开一些实施例均以待检测物为手指以及指纹识别进行描述。
在一些实施例中，不对纹路识别结构22的具体结构进行限定，只要纹路识别结构22可以将光信号转化为电信号。例如纹路识别结构22包括光敏传感器、光电传感器等中的至少一个。
在一些实施例中，不对纹路识别结构22中多个纹路识别器件221的排布方式进行限定，其设置位置只要满足：当手指触摸显示装置的纹路识别区任意位置时，都可以进行指纹检测。
示例的，相邻两个纹路识别器件221可以邻接设置(即，相邻两个纹路识别器件之间无间隔)；或者，如图2所示，相邻两个纹路识别器件221也可以间隔设置(相邻两个纹路识别器件之间具有间隔)。
例如，纹路识别结构22中每相邻两个纹路识别器件221均邻接设置；又如，纹路识别结构22中每相邻两个纹路识别器件221均间隔设置；再如，纹路识别结构22中相邻两个纹路识别器件221既可以邻接设置，也可以间隔设置。
在一些实施例中，纹路识别器件221呈阵列排布；或者，纹路识别器件221无规则排布。本公开一些实施例对此不作限定，只要纹路识别区可以进行纹路识别即可。
在一些实施例中，不对第一通孔211在显示面板上的正投影的的形状进行限定，只要经过一个第一通孔211的光线，最终能够照射到与该第一通孔211正对的光学传感单元221上即可。
示例的，第一通孔211在显示面板上的正投影的形状为圆形(如图3A所示)、矩形(如图3B所示)、椭圆形(如图3C所示)。
在一些实施例中，不对第一通孔211的尺寸进行限定。具体地， 第一通孔211的尺寸与显示面板的厚度、遮光层21与纹路识别结构22之间的距离、纹路识别器件221的尺寸、以及第一通孔211的形状有关。
示例的，纹路识别器件221的形状为圆形，纹路识别器件221的直径为1～7μm。例如，纹路识别器件221的直径为1μm、6μm、7μm。
在一些实施例中，多个第一通孔211与多个纹路识别器件221一一正对设置。例如，一个第一通孔211与一个纹路识别器件221对应，且第一通孔211的中心和与该第一通孔211对应的纹路识别器件221的中心在一竖直线上。
在一些实施中，不对遮光层21的材料进行限定，只要遮光层21可以起到遮光作用即可。
例如，遮光层21的材料可以是金属；再如，遮光层21的材料也可以是树脂(例如树脂为包括碳的树脂)。
在一些实施例中，如图4和图5所示，纹路识别区BB的尺寸等于显示区AA的尺寸；或者，纹路识别区BB的尺寸小于显示区AA的尺寸。
示例的，在纹路识别区BB的尺寸等于显示区AA的尺寸的情况下，显示装置的显示区AA均可用于指纹识别。
在一些实施例中，考虑到遮光层21设置在显示面板的与其出光侧相对的一侧，为了避免遮光层21影响显示装置的正常显示，显示面板可以是自发光显示面板。
示例的，显示面板可以是有机发光二极管(Organic Light-Emitting Diode，简称OLED)显示面板。如图1所示，OLED显示面板包括OLED器件13，OLED器件13包括第一电极131、发光功能层132、以及第二电极133。在第一电极131为阳极的情况下，第二电极133为阴极；在第一电极131为阴极的情况下，第二电极133为阳极。
此外，自发光显示面板可以是顶发光，也可以是底发光。遮光层21和纹路识别结构22设置于自发光显示面板中与显示侧相对的非显示侧。
综上，本公开一些实施例提供一种显示装置，通过将遮光层21和纹路识别结构22设置在显示面板以外。一方面，可简化显示面板的制备过程；另一方面，制备显示面板的过程和制备遮光层21、纹路识别 结构22的过程可以在不同制程中进行，即在制备显示面板时，可同时制备遮光层21和纹路识别结构22，最后将制备成为一个整体的遮光层21和纹路识别结构22贴附在显示面板上，以节省显示装置的制备时间，从而减少杂质附着。
在一些实施例中，如图1所示，显示面板包括阵列基板，阵列基板包括衬底11和设置于衬底11上的薄膜晶体管12，薄膜晶体管12包括有源层121，有源层121的材料包括硅晶体。此外，薄膜晶体管12还包括栅绝缘层122、栅极123、源极125、漏极126。
在一些实施例中，阵列基板还包括设置于衬底11与薄膜晶体管12之间的缓冲层。
需要说明的是，薄膜晶体管12的类型可以是顶栅型、底栅型、双栅型中的任意一种。
在一些实施例中，在薄膜晶体管12是顶栅型薄膜晶体管的情况下，薄膜晶体管12还包括设置于栅极123与源极125和漏极126之间的层间绝缘层124。
在一些示例中，有源层121的材料包括硅晶体，例如，有源层121的材料为非晶硅(a-Si)、多晶硅(p-Si)或者低温多晶硅(LTPS)中的至少一种。
现有技术中，通常将遮光层21设置在衬底11与缓冲层之间，由于遮光层21包括多个第一通孔211，导致缓冲层远离衬底11一侧的表面不平坦(例如导致缓冲层远离衬底11一侧的表面上有凹陷和凸出)。在缓冲层远离衬底11的一侧上设置薄膜晶体管12，若薄膜晶体管12的有源层121包括硅晶体，则硅晶体在结晶的过程中，会由于缓冲层远离衬底11一侧的表面不平坦而产生结晶差异。
具体地，硅晶体在缓冲层远离衬底11一侧的表面上的凹陷和凸出的部分具有结晶差异，从而导致有源层121的均一性变差，影响薄膜晶体管12的特性，进而影响显示装置的显示效果。
基于此，本公开一些实施例提供的一种显示装置，将遮光层21设置在显示面板以外，且显示面板与遮光层21分别独立制备，显示面板中各个结构在形成的过程中，均不受遮光层21的影响。这样，有源层121中的硅晶体也不会因为遮光层21而导致结晶差异，可以避免因有源层121的均一性差而影响薄膜晶体管12的特性，影响显示装置的显 示效果。
在一些实施例中，顶栅型薄膜晶体管的有源层121，相较于底栅型薄膜晶体管和双栅型薄膜晶体管的有源层121，更加靠近缓冲层。若将顶栅型薄膜晶体管的有源层121设置在缓冲层上，则顶栅型薄膜晶体管的有源层121的均一性将更差。因此，本公开一些实施例可有效解决顶栅型薄膜晶体管的有源层121均一性差的问题。
在一些实施例中，遮光层21的材料包括金属。
在一些实施例中，若采用金属作为遮光层21的材料，可以使得遮光层21的厚度较薄，进而降低显示装置的厚度。
然而，若采用相关技术的设置方式，将遮光层21设置在衬底11与缓冲层之间，且遮光层21的材料包括金属，则遮光层21具有导电性，会与薄膜晶体管12中的导电结构(例如栅极)相互作用，导致电荷聚集，从而导致薄膜晶体管12出现整体显示漂移，进而影响显示装置的显示效果。
而在本公开一些实施例中，即使遮光层21的材料包括金属，但相较于相关技术，由于遮光层21与薄膜晶体管12中的导电结构的距离更远。因此，可在一定程度上避免遮光层21与薄膜晶体管12中的导电结构相互作用，且避免由于电荷聚集而导致薄膜晶体管12出现整体显示漂移，从而改善显示装置的显示效果。
在一些实施例中，如图4所示，在纹路识别区BB的尺寸小于显示区AA的尺寸的情况下，遮光层21还包括多个第二通孔212。第二通孔212位于显示区AA中除纹路识别区BB以外的区域。需要说明的是，本公开一些实施例对纹路识别区BB在显示区AA中的位置不作限定。
示例的，第二通孔212的形状及尺寸可以与第一通孔211的形状和尺寸相同；或者，第二通孔212的形状及尺寸与第一通孔211的形状和尺寸不相同，本公开一些实施例对此不作限定。
在一些实施例中，如图4所示，在纹路识别区BB的尺寸小于显示区AA的尺寸的情况下，遮光层21包括位于显示区AA中除纹路识别区BB以外的区域的第二通孔212。当显示装置投入使用时，可以通过第一通孔211和第二通孔212进行散热。
在一些实施例中，如图4所示，第二通孔和第一通孔211呈阵列 排布，且第二通孔212的形状及尺寸与第一通孔211的形状和尺寸相同。这样可以使显示装置散热均匀。
在一些实施例中，如图5所示，在纹路识别区BB的尺寸等于显示区AA的尺寸的情况下，第一通孔211与纹路识别器件221一一对应，无需设置第二通孔212。此时，可利用第一通孔211对显示装置进行整体散热。需要说明的是，为示意清楚，图5中的纹路识别区BB的尺寸稍小于显示区AA的尺寸，实际上，两者的尺寸相等。
需要说明的是，纹路识别区BB的尺寸可以等于显示区AA的尺寸；或者，纹路识别区BB的尺寸可以小于显示区AA的尺寸；再或者，纹路识别区BB的尺寸也可以大于显示区AA的尺寸，本公开一些实施例对此不作限定。
在一些实施例中，显示面板为柔性显示面板。
如图6所示，柔性显示面板的衬底11可以由间隔设置的柔性薄膜111和间隔层112构成。
示例性的，柔性薄膜111的材料可以是聚酰亚胺(Polyimide，简称PI)。
在一些实施例中，由于柔性显示面板通常是在刚性基板上制备而得。因此，柔性显示面板的制备时间越长，散落在显示面板中的杂质、以及从刚性基板上附着的杂质就越多。本公开一些实施例通过将遮光层21设置在柔性显示面板外，使遮光层21和柔性显示面板相互独立，可减少柔性显示面板的制备时间，从而减少显示面板的杂质附着。
在一些实施例中，如图7所示，所述显示装置还包括保护层30；保护层30设置于遮光层21远离显示面板10一侧。
在一些实施例中，显示装置还包括透明胶层31，透明胶层31设置于显示面板与遮光层之间。透明胶层31被配置为将遮光层21和保护层30固定于显示面板10上。其中，透明胶层31的材料可以是压敏胶(pressure sensitive adhesive，简称PSA)，或者，透明胶层31的材料也可以是光学透明胶(Optically Clear Adhesive，简称OCA)。
需要说明的是，本公开一些实施例不对保护层30的材料进行限定，只要在显示面板10为柔性显示面板的情况下，保护层30可以用于保护柔性显示面板即可。
示例的，保护层30的材料可以是聚对苯二甲酸类塑料(Polyethylene terephthalate，简称PET)。
在一些实施例中，保护层30也可以对遮光层21和柔性显示面板都进行保护。
本公开一些实施例还提供一种显示装置的制备方法，如图1和图7所示，包括：制备显示面板；在显示面板10的与其出光面相对的一侧设置遮光层21，遮光层21包括多个第一通孔211；在遮光层远离显示面板的一侧设置纹路识别结构22；纹路识别结构22位于显示装置的纹路识别区，纹路识别结构包括多个纹路识别器件221，多个纹路识别器件221与多个第一通孔211一一对应设置。
在一些实施例中，显示装置的制备方法中，在显示面板10的与其出光面相对的一侧设置遮光层21，包括：提供保护层30，采用构图工艺在保护层的一侧制备遮光层21；在遮光层21远离保护层30的一侧涂覆透明胶层31；将带有遮光层21和透明胶层31的保护层30贴附于显示面板10的与其出光面相对的一侧。
其中，透明胶层31被配置为将遮光层21和保护层30固定于显示面板10上。其中，透明胶层31的材料可以是压敏胶(pressure sensitive adhesive，简称PSA)，或者，透明胶层31的材料也可以是光学透明胶(Optically Clear Adhesive，简称OCA)。
在一些实施例中，不对纹路识别结构22的具体结构进行限定，只要纹路识别结构22可以将光信号转化为电信号。例如纹路识别结构22包括光敏传感器、光电传感器等中的至少一个。
在一些实施例中，不对纹路识别结构22中多个纹路识别器件221的排布方式进行限定，其设置位置只要满足：当手指触摸显示装置的纹路识别区任意位置时，都可以进行指纹检测。
示例的，相邻两个纹路识别器件221可以邻接设置(即，相邻两个纹路识别器件之间无间隔)；或者，如图2所示，相邻两个纹路识别器件221也可以间隔设置(相邻两个纹路识别器件之间具有间隔)。
例如，纹路识别结构22中每相邻两个纹路识别器件221均邻接设置；又如，纹路识别结构22中每相邻两个纹路识别器件221均间隔设置；再如，纹路识别结构22中相邻两个纹路识别器件221既可以邻接设置，也可以间隔设置。
在一些实施例中，纹路识别器件221呈阵列排布；或者，纹路识别器件221无规则排布。本公开一些实施例对此不作限定，只要纹路识别区可以进行纹路识别即可。
在一些实施例中，不对第一通孔211在显示面板上的正投影的的形状进行限定，只要经过一个第一通孔211的光线，最终能够照射到与该第一通孔211正对的光学传感单元221上即可。
示例的，第一通孔211在显示面板上的正投影的形状为圆形(如图3A所示)、矩形(如图3B所示)、椭圆形(如图3C所示)。
在一些实施例中，不对第一通孔211的尺寸进行限定。具体地，第一通孔211的尺寸与显示面板的厚度、遮光层21与纹路识别结构22之间的距离、纹路识别器件221的尺寸、以及第一通孔211的形状有关。
示例的，纹路识别器件221的形状为圆形，纹路识别器件221的直径为1～7μm。例如，纹路识别器件221的直径为1μm、6μm、7μm。
在一些实施例中，多个第一通孔211与多个纹路识别器件221一一正对设置。例如，一个第一通孔211与一个纹路识别器件221对应，且第一通孔211的中心和与该第一通孔211对应的纹路识别器件221的中心在一竖直线上。
在一些实施中，不对遮光层21的材料进行限定，只要遮光层21可以起到遮光作用即可。
例如，遮光层21的材料可以是金属；再如，遮光层21的材料也可以是树脂(例如树脂为包括碳的树脂)。
在一些实施例中，如图4和图5所示，纹路识别区BB的尺寸等于显示区AA的尺寸；或者，纹路识别区BB的尺寸小于显示区AA的尺寸。
示例的，在纹路识别区BB的尺寸等于显示区AA的尺寸的情况下，显示装置的显示区AA均可用于指纹识别。
在一些实施例中，考虑到遮光层21设置在显示面板的与其出光侧相对的一侧，为了避免遮光层21影响显示装置的正常显示，显示面板可以是自发光显示面板。
示例的，显示面板可以是有机发光二极管(Organic Light-Emitting Diode，简称OLED)显示面板。如图1所示，OLED显示面板包括OLED 器件13，OLED器件13包括第一电极131、发光功能层132、以及第二电极133。在第一电极131为阳极的情况下，第二电极133为阴极；在第一电极131为阴极的情况下，第二电极133为阳极。
此外，自发光显示面板可以是顶发光，也可以是底发光。遮光层21和纹路识别结构22设置于自发光显示面板中与显示侧相对的非显示侧。
本公开一些实施例提供一种显示装置的制备方法，通过将遮光层21和纹路识别结构22设置在显示面板以外。一方面，可简化显示面板的制备过程；另一方面，制备显示面板的过程和制备遮光层21、纹路识别结构22的过程可以在不同制程中进行，即在制备显示面板时，可同时制备遮光层21和纹路识别结构22，最后将制备成为一个整体的遮光层21和纹路识别结构22贴附在显示面板上，以节省显示装置的制备时间，从而减少杂质附着。
在一些实施例中，如图7所示，显示面板10为柔性显示面板。遮光层21与纹路识别结构22构成纹路识别组件20的至少一部分。显示装置还包括位于遮光层21与纹路识别结构22之间的保护层30。
需要说明的是，不对保护层30的材料进行限定，只要在显示面板10为柔性显示面板的情况下，保护层30可以用于保护柔性显示面板即可。
示例的，保护层30的材料可以是PET。
在一些实施例中，保护层30可以对遮光层21和柔性显示面板都进行保护。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (13)

  1. 一种显示装置，所述显示装置具有显示区，所述显示区包括纹路识别区；所述显示装置包括：
    显示面板；
    设置于所述显示面板的与其出光侧相对的一侧的遮光层，所述遮光层包括多个第一通孔；以及
    设置于所述遮光层远离所述显示面板一侧的纹路识别结构，所述纹路识别结构位于所述纹路识别区，所述纹路识别结构包括多个纹路识别器件，所述多个纹路识别器件与所述多个第一通孔一一对应设置。
  2. 根据利要求1所述的显示装置，还包括保护层，所述保护层设置于所述遮光层远离所述显示面板的一侧。
  3. 根据权利要求2所述的显示装置，其中，所述纹路识别结构设置于所述保护层远离所述遮光层的一侧。
  4. 根据权利要求2或3所述的显示装置，还包括透明胶层，所述透明胶层设置于所述显示面板与所述遮光层之间。
  5. 根据权利要求1～4中任一项所述的显示装置，其中，所述纹路识别区的尺寸小于所述显示区的尺寸；
    所述遮光层还包括多个第二通孔，所述多个第二通孔位于所述显示区中除所述纹路识别区以外的区域。
  6. 根据权利要求1～4中任一项所述的显示装置，其中，所述纹路识别区的尺寸等于所述显示区的尺寸。
  7. 根据权利要求1～6中任一项所述的显示装置，其中，所述显示面板包括阵列基板，所述阵列基板包括衬底和设置于所述衬底上的薄膜晶体管，所述薄膜晶体管包括有源层，所述有源层的材料包括硅晶体。
  8. 根据权利要求7所述的显示装置，其中，所述薄膜晶体管为顶栅型薄膜晶体管。
  9. 根据权利要求1～8中任一项所述的显示装置，其中，所述遮光层的材料包括金属或者树脂。
  10. 根据权利要求1～9中任一项所述的显示装置，其中，所述多个纹路识别器件和所述多个第一通孔均呈阵列式排布。
  11. 根据权利要求1～10中任一项所述的显示装置，其中，所述显示面板为柔性显示面板。
  12. 一种显示装置的制备方法，包括：
    制备显示面板；
    在所述显示面板的与其出光面相对的一侧设置遮光层，所述遮光层包括多个第一通孔；
    在所述遮光层远离所述显示面板的一侧设置纹路识别结构；所述纹路识别结构位于所述显示装置的纹路识别区，所述纹路识别结构包括多个纹路识别器件，所述多个纹路识别器件与所述多个第一通孔一一对应设置。
  13. 根据权利要求12所述的制备方法，其中，所述在所述显示面板的与其出光面相对的一侧设置遮光层，包括：
    提供保护层，采用构图工艺在所述保护层的一侧制备所述遮光层；
    在所述遮光层远离所述保护层的一侧涂覆透明胶层；
    将带有所述遮光层和所述透明胶层的保护层贴附于所述显示面板的与其出光面相对的一侧。
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