WO2020159120A1 - Touch sensor and image display device including same - Google Patents

Touch sensor and image display device including same Download PDF

Info

Publication number
WO2020159120A1
WO2020159120A1 PCT/KR2020/000743 KR2020000743W WO2020159120A1 WO 2020159120 A1 WO2020159120 A1 WO 2020159120A1 KR 2020000743 W KR2020000743 W KR 2020000743W WO 2020159120 A1 WO2020159120 A1 WO 2020159120A1
Authority
WO
WIPO (PCT)
Prior art keywords
touch sensor
electrode
layer
recess
sensing electrodes
Prior art date
Application number
PCT/KR2020/000743
Other languages
French (fr)
Korean (ko)
Inventor
이철훈
양진복
Original Assignee
동우화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우화인켐 주식회사 filed Critical 동우화인켐 주식회사
Publication of WO2020159120A1 publication Critical patent/WO2020159120A1/en

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/045—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • the present invention relates to a touch sensor and an image display device including the same. More specifically, the present invention relates to a touch sensor including a plurality of conductive layers and an image display device including the same.
  • an input device a touch panel or a touch sensor, which is attached to the display device and allows a user to input a command by selecting an instruction displayed on the screen as a human hand or an object, is combined with a display device to display images
  • Electronic devices with information input functions are being developed.
  • the touch sensor includes sensing electrodes for converting a touch input from a user into an electrical signal through a change in capacitance. Since the sensing electrodes are disposed in a display area of the image display device, when the sensing electrodes are viewed by a user, image quality implemented from the image display device may be impaired.
  • One object of the present invention is to provide a touch sensor having improved optical and electrical properties.
  • One object of the present invention is to provide an image display device including a touch sensor having improved optical and electrical characteristics.
  • One object of the present invention is to provide a window stack including a touch sensor having improved optical and electrical properties.
  • Base layer First sensing electrodes arranged in the row direction on the substrate layer and having protrusions formed at both ends in the row direction; Second sensing electrodes arranged in the column direction on the substrate layer and integrally connected to each other by connecting portions formed at both ends in the column direction; And bridge electrodes electrically connected to the adjacent protrusions in the row direction, and the protrusions are spaced apart from each other with the connection portion interposed therebetween, and the connection portion includes a recess.
  • the connecting portion includes a first portion adjacent to both ends of the second sensing electrode, and a second portion whose width is reduced than the first portion by the recess, the touch sensor .
  • the length of the recess in the column direction is 70 to 200 ⁇ m, a touch sensor.
  • the width of the second portion is 50 to 150 ⁇ m, the touch sensor.
  • the bridge electrode comprises a contact through the insulating layer and in direct contact with the protrusion of the first sensing electrode, the touch sensor.
  • Window substrate And a touch sensor according to any one of the above 1 to 10 stacked on the window substrate.
  • Display panel And a touch sensor according to any one of the above 1 to 10 stacked on the display panel.
  • the touch sensor for example, by controlling the pattern shape of the cross region of the column-direction sensing electrodes and the row-direction sensing electrodes, the electrode visibility phenomenon caused by the electrode pattern overlap in the cross-region is suppressed can do.
  • the electrode shape may be further suppressed by rounding the pattern shape in the cross region.
  • FIG. 1 is a schematic plan view showing an example of an electrode arrangement of a capacitive touch sensor.
  • FIGS. 2 and 3 are a plan view and a cross-sectional view, respectively, showing a cross-region structure of a touch sensor according to example embodiments.
  • Fig. 4 is a plan view showing a structure of a cross region of a touch sensor according to some example embodiments.
  • FIG. 5 is a schematic diagram illustrating a window stack and an image display device according to example embodiments.
  • 6 and 7 are graphs showing channel resistance measurement results according to a change in the width of the connecting portion.
  • FIG. 8 is a graph showing a result of measuring a channel resistance according to a change in length of a recess included in a connection part.
  • Embodiments of the present invention provide a touch sensor that includes a protrusion and a recess at a crossing region of sensing electrodes and has an electrode visibility suppressed.
  • a window stack and an image display device including the touch sensor are provided.
  • FIG. 1 is a schematic plan view showing an example of an electrode arrangement of a capacitive touch sensor.
  • the touch sensor may include, for example, first sensing electrodes 50 and second sensing electrodes 60 disposed on the base layer 100.
  • the base layer 100 is used in a sense to encompass a support layer for forming the sensing electrodes 50 and 60, an interlayer insulating layer, or a film type substrate.
  • the base layer 100 may be a film material commonly used in touch sensors without particular limitation, and may include, for example, glass, polymer, and/or inorganic insulating materials.
  • Examples of the polymer cyclic olefin polymer (COP), polyethylene terephthalate (PET), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), poly Allylate (polyallylate), polyimide (PI), cellulose acetate propionate (CAP), polyethersulfone (PES), cellulose triacetate (TAC), polycarbonate (PC), cyclic olefin copolymer (COC), poly And methyl methacrylate (PMMA).
  • Examples of the inorganic insulating material include silicon oxide, silicon nitride, silicon oxynitride, and metal oxide.
  • a layer or film member of the image display device into which the touch sensor is inserted may be provided as the base layer 100.
  • a layer or film member of the image display device into which the touch sensor is inserted may be provided as the base layer 100.
  • an encapsulation layer or a passivation layer included in the display panel may be provided as the base layer 100.
  • the first sensing electrodes 50 and the second sensing electrodes 60 may be arranged along two different crossing directions.
  • the first sensing electrodes 50 may be arranged along the row direction (or X direction) of the upper surface of the base layer 100.
  • the second sensing electrodes 60 may be arranged along the column direction (or Y direction) of the upper surface of the base layer 100.
  • the second sensing electrodes 60 neighboring along the column direction may be connected to each other by a connection unit 65.
  • the connecting portion 65 may be integrally connected to the second sensing electrodes 60 to be provided as a substantially single member.
  • the plurality of second sensing electrodes 60 may be integrally connected to each other by the connection unit 65 to define a second sensing electrode column. Also, a plurality of the second sensing electrode columns may be arranged along the row direction.
  • Each of the first sensing electrodes 50 may have an independent island pattern shape.
  • the first sensing electrodes 50 neighboring in the row direction may be electrically connected to each other through the bridge electrode 55.
  • a first sensing electrode row including a plurality of first sensing electrodes 50 connected to each other through the bridge electrode 55 may be defined. Also, a plurality of the first sensing electrode rows may be arranged along the column direction.
  • the first and second sensing electrodes 50 and 60, and/or the bridge electrode 55 are, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin It may include transparent conductive materials such as oxide (IZTO), cadmium tin oxide (CTO), silver nanowires (AgNW), carbon nanotubes (CNT), graphene, metal mesh, and conductive polymers.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • ITO indium zinc tin
  • It may include transparent conductive materials such as oxide (IZTO), cadmium tin oxide (CTO), silver nanowires (AgNW), carbon nanotubes (CNT), graphene, metal mesh, and conductive polymers.
  • the bridge electrode 55 is silver (Ag), gold (Au), copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), titanium ( Ti), tungsten (W), niobium (Nb), tantalum (Ta), vanadium (V), iron (Fe), manganese (Mn), cobalt (Co), nickel (Ni), zinc (Zn), molybdenum ( Mo), calcium (Ca), or alloys thereof.
  • the first and second sensing electrodes 50 and 60 and/or the bridge electrode 55 may include a stacked structure of a transparent conductive oxide layer and a metal layer.
  • the bridge electrode 55 may be formed to include a low-resistance metal to reduce channel resistance through the first sensing electrode row.
  • the first and second sensing electrodes 50 and 60 may include the transparent conductive oxide described above to improve the transmittance of the touch sensor.
  • Traces may be extended from each of the first sensing electrode row and the second sensing electrode column.
  • a first trace 70 may extend from each of the first sensing electrode rows
  • a second trace 80 may extend from each of the second sensing electrode columns.
  • the distal ends of the first and second traces 70 and 80 may be aggregated into a bonding region assigned to one end of the base layer 100.
  • the end portions may be bonded, for example, through a flexible printed circuit board (FPCB) and an anisotropic conductive film (ACF).
  • a touch sensor driving IC chip may be electrically connected to the first and second traces 70 and 80 through the flexible printed circuit board.
  • the first and second traces 70 and 80 are silver (Ag), gold (Au), copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), titanium ( Ti), tungsten (W), niobium (Nb), tantalum (Ta), vanadium (V), iron (Fe), manganese (Mn), cobalt (Co), nickel (Ni), zinc (Zn), molybdenum ( Mo), calcium (Ca), or alloys thereof (eg, silver-palladium-copper (APC)). These may be used alone or in combination of two or more.
  • the bridge electrode 55 and the connecting portion 65 may overlap each other in the plane direction.
  • the bridge electrode 55 and the connection portion 65 may face each other with the insulating layer 120 interposed therebetween.
  • an increase in interfacial reflection due to a difference in refractive index between layers and an electrode visibility to a user may be caused by a difference in color.
  • FIG. 2 and 3 are a plan view and a cross-sectional view, respectively, showing a cross-region structure of a touch sensor according to example embodiments.
  • FIG. 3 is a cross-sectional view taken along the line I-I' of FIG. 2 in the thickness direction.
  • the first sensing electrodes 110 are physically connected to each other with a connection part 135 integrally connected to the second sensing electrodes 130 interposed therebetween. Can be separated.
  • the bridge electrode 115 intersects the connection portion 135 on the insulating layer 120 and may overlap in the planar direction.
  • protrusions 112 may be formed at both ends of the first sensing electrode 110 in the row direction.
  • the protrusions 112 of the adjacent first sensing electrodes 110 may be spaced apart so as to face each other in the row direction.
  • connection portion 135 may include a recess 132 recessed in the row direction.
  • connection portion 135. may include a central portion whose width is reduced by the recesses 132.
  • connection portion 135 may include a first portion 135a and a second portion 135b.
  • the first portion 135a may include both ends connected directly to the second sensing electrode 130 of the connection portion 135.
  • the second portion 135b may include a portion narrowed by the recess 132.
  • a pair of first portions 135a may be connected to both ends of the second portion 135b.
  • the protrusion 112 included in the first sensing electrode 110 may be inserted into the recess 132 included in the connection 135 of the second sensing electrode 130.
  • the pair of adjacent protrusions 112 in the row direction may face each other with the connecting portion 135 or the second portion 135b interposed therebetween.
  • the insulating layer 120 may at least partially cover the first and second sensing electrodes 110 and 130.
  • the bridge electrode 115 may electrically connect the first sensing electrodes 110 adjacent to each other in the row direction on the insulating layer 120.
  • the bridge electrode 115 may include a contact 115a penetrating the insulating layer 120 and contacting the first sensing electrode 110.
  • the contact 115a included in the bridge electrode 115 may directly contact the top surface of the protrusion 112 of the first sensing electrode 110.
  • a passivation layer 140 covering the bridge electrode 115 may be formed on the insulating layer 120.
  • the insulating layer 120 and the passivation layer 140 may include organic insulating materials such as siloxane-based resins and acrylic resins, or inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride.
  • the protrusion 112 of the first sensing electrode 110 and the recess 132 or the second part 135b of the second sensing electrode 130 in the crossing region C shown in FIG. Through this, the area occupied by the electrode can be reduced. Therefore, it is possible to reduce or suppress the phenomenon of electrode visibility resulting from the crossing region (C).
  • the distance between the protrusions 112 may be reduced through the recess 132 to reduce the length of the bridge electrode 115. Therefore, it is possible to suppress or reduce the phenomenon of electrode visibility due to overlapping of the electrode layers.
  • connection portion 135 the area of the first portion 135a is relatively increased to prevent an excessive increase in channel resistance in the second sensing electrode column by the second portion 135b.
  • the area or size where the electrodes overlap in the crossing region C is reduced to suppress electrode visibility, while preventing an increase in channel resistance to maintain an appropriate signal transmission rate.
  • the width b of the second portion 135b of the connection portion 135 may be smaller than the width a of the first portion 135a of the connection portion 135.
  • the width (width in the row direction) b of the second portion 135b of the connection portion 135 may be about 50 to 150 ⁇ m.
  • the width of the second portion 135b is less than about 50 ⁇ m, the channel resistance of the second sensing electrode row may increase excessively.
  • the width of the second portion 135b exceeds about 150 ⁇ m, it may not be easy to implement the above-described electrode visibility preventing effect, and the effect of reducing the channel resistance may also be weakened.
  • the width of the second portion 135b may be about 50 to 100 ⁇ m.
  • the length of the recess 132 (length in the column direction) c may be about 70 to 200 ⁇ m.
  • the width of the protrusion 112 is also excessively reduced, so that the channel resistance of the first sensing electrode row may be excessively increased.
  • mutual signal interference may occur since a sufficient gap between the protrusion 112 and the connection portion 135 is not secured, mutual signal interference may occur.
  • the length of the recess 132 exceeds about 200 ⁇ m, the length of the second sensing electrode row is excessively increased, which may lead to an increase in channel resistance.
  • the length of the recess 132 may be about 100 to 200 ⁇ m.
  • Fig. 4 is a plan view showing a cross-region structure of a touch sensor according to some example embodiments.
  • corner portions of the protrusions 113 included in the first sensing electrode 110 and the recesses 132 formed in the connecting portion 137 of the second sensing electrode 130 may have a rounded shape. have. Accordingly, corner portions of the first portion 137a and the second portion 137b of the connecting portion 137 may also have a rounded shape.
  • the corner portions of the electrode are rounded, it is possible to further suppress the electrode visibility phenomenon due to the rapid pattern profile change.
  • by introducing a rounded profile it is possible to reduce the moiré phenomenon caused by overlap of electrodes and wirings of the display panel on which the touch sensor is mounted.
  • corner portions of the bridge electrode 117 may also be rounded, and the above-described electrode visibility prevention and moiré prevention may be more effectively implemented.
  • FIG. 5 is a schematic diagram illustrating a window stack and an image display device according to example embodiments.
  • the window stack 250 may include a window substrate 230, a polarization layer 210, and a touch sensor 200 according to the exemplary embodiments described above.
  • the window substrate 230 may include, for example, a hard coating film, and in one embodiment, a light blocking pattern 235 may be formed on a peripheral portion of one surface of the window substrate 230.
  • the light blocking pattern 235 may include, for example, a color print pattern, and may have a single layer or multi-layer structure.
  • the bezel area or the non-display area of the image display device may be defined by the light blocking pattern 235.
  • the polarizing layer 210 may include a coated polarizer or a polarizing plate.
  • the coated polarizer may include a liquid crystal coating layer including a polymerizable liquid crystal compound and a dichroic dye.
  • the polarization layer 210 may further include an alignment layer for imparting alignment to the liquid crystal coating layer.
  • the polarizing plate may include a polyvinyl alcohol-based polarizer and a protective film attached to at least one surface of the polyvinyl alcohol-based polarizer.
  • the polarization layer 210 may be directly bonded to the one surface of the window substrate 230 or may be attached through the first point adhesive layer 220.
  • the touch sensor 200 may be included in the window stack 250 in the form of a film or panel. In one embodiment, the touch sensor 200 may be combined with the polarization layer 210 through the second point adhesive layer 225.
  • the window substrate 230, the polarization layer 210, and the touch sensor 200 may be arranged in order from the user's viewing side.
  • the electrode layer of the touch sensor 200 is disposed under the polarization layer 210, the electrode visibility phenomenon can be prevented.
  • the electrode visibility phenomenon can be more effectively prevented through the electrode structure in the above-mentioned crossing region (C).
  • the touch sensor 200 may be directly transferred onto the window substrate 230 or the polarization layer 210.
  • the window substrate 230, the touch sensor 200, and the polarization layer 210 may be arranged in the order of the user's view side.
  • the image display device may include a display panel 360 and the above-described window stack 250 coupled to the display panel 360.
  • the display panel 360 includes a pixel electrode 310, a pixel defining layer 320, a display layer 330, a counter electrode 340 and an encapsulation layer 350 disposed on the panel substrate 300.
  • a pixel electrode 310 a pixel defining layer 320
  • a display layer 330 a display layer 330
  • a counter electrode 340 and an encapsulation layer 350 disposed on the panel substrate 300.
  • a pixel circuit including a thin film transistor (TFT) is formed on the panel substrate 300, and an insulating layer covering the pixel circuit may be formed.
  • the pixel electrode 310 may be electrically connected to the drain electrode of the TFT, for example, on the insulating film.
  • the pixel defining layer 320 is formed on the insulating layer to expose the pixel electrode 310 to define a pixel area.
  • the display layer 330 is formed on the pixel electrode 310, and the display layer 330 may include, for example, a liquid crystal layer or an organic emission layer.
  • the counter electrode 340 may be disposed on the pixel defining layer 320 and the display layer 330.
  • the counter electrode 340 may be provided as, for example, a common electrode or cathode of the image display device.
  • An encapsulation layer 350 for protecting the display panel 360 may be stacked on the counter electrode 340.
  • the display panel 360 and the window stack 250 may be combined through the point adhesive layer 260.
  • the thickness of the point adhesive layer 260 may be greater than the thickness of each of the first and second point adhesive layers 220 and 225, and the viscoelasticity at -20 to 80°C may be about 0.2 MPa or less.
  • the viscoelasticity may be about 0.01 to 0.15MPa.
  • first sensing electrodes and second sensing electrodes having a size of 4 mm x 4 mm for each unit electrode were formed.
  • the second sensing electrodes are integrally connected by a connection portion, and a recess is formed in the connection portion to include a second portion with a narrow width as shown in FIG. 2.
  • the first sensing electrodes were formed to include protrusions so as to face the second portion therebetween.
  • the sensing electrode was formed using ITO having a sheet resistance of 40 ⁇ / ⁇ .
  • An insulating layer covering the first and second sensing electrodes was formed, and a bridge electrode was formed to connect neighboring first sensing electrodes. Specifically, a contact hole having a size of 30 ⁇ m x 30 ⁇ m penetrating the insulating layer was formed, and a conductive electrode filling the contact hole on the insulating layer was deposited and patterned to form a bridge electrode.
  • the channel resistance through the first sensing electrode row and the second sensing electrode column of the touch sensor manufactured as described above was measured, respectively.
  • 6 and 7 are graphs showing channel resistance measurement results according to a change in the width of the connecting portion.
  • FIG. 6 forms a bridge electrode having a width of 60 ⁇ m using ITO having a sheet resistance of 40 ⁇ / ⁇ , and a width (a) of the first portion included in the connection portion of the second sensing electrode is 250 ⁇ m.
  • the channel resistance is changed according to the change in the width (b) of the second portion.
  • 7 shows the channel resistance results under the same conditions as in FIG. 6, except that the bridge electrode was formed to a width of 4 ⁇ m using a metal having a sheet resistance of 0.2 ⁇ / ⁇ .
  • the channel resistance through the first sensing electrode row (x resistance) is maintained constant, while the width of the second portion exceeds about 50 ⁇ m while the channel resistance through the second sensing electrode column ( y resistance) It can be seen that the downward trend is slowing down.
  • FIG. 8 is a graph showing a result of measuring a channel resistance according to a change in length of a recess included in a connection part.
  • the width (a) of the first part is fixed to 250 ⁇ m and the width (b) of the second part is fixed to 75 ⁇ m.
  • the change in channel resistance was measured while changing the length (c) of the recess.
  • the width of the protrusion included in the first sensing electrode was increased together at the same rate according to the change in the length of the recess.
  • the length of the recess increases to about 70 ⁇ m or more, the increase and decrease of the resistance of the first and second sensing electrodes cancel each other, thereby suppressing an increase in the total resistance.
  • the length of the recess was about 100 ⁇ m or more, the total resistance was kept substantially constant.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Optics & Photonics (AREA)
  • Position Input By Displaying (AREA)

Abstract

A touch sensor according to embodiments of the present invention comprises: a substrate layer; first sensing electrodes arranged on the substrate layer in the row-direction, and having protrusions formed on the ends thereof in the row-direction; second sensing electrodes arranged on the substrate layer in the column-direction, and integrally connected to one-another by connection parts formed on the ends thereof in the column-direction; and bridge electrodes which are electrically connected to neighboring protrusions in the row-direction. The protrusions are separated from one another so as to face one another with a connection part there-between; the connection parts comprise a recess. Electrode visibility can be reduced in the sensing electrode intersection area by the protrusions and the recesses.

Description

터치 센서 및 이를 포함하는 화상 표시 장치Touch sensor and image display device including same
본 발명은 터치 센서 및 이를 포함하는 화상 표시 장치에 관한 것이다. 보다 상세하게는, 복수의 도전층을 포함하는 터치 센서 및 이를 포함하는 화상 표시 장치에 관한 것이다.The present invention relates to a touch sensor and an image display device including the same. More specifically, the present invention relates to a touch sensor including a plurality of conductive layers and an image display device including the same.
최근 정보화 기술이 발전함에 따라 디스플레이 분야에 대한 요구도 다양한 형태로 제시되고 있다. 예를 들면, 박형화, 경량화, 저소비 전력화 등의 특징을 지닌 여러 평판 표시 장치(Flat Panel Display device), 예를 들어, 액정표시장치(Liquid Crystal Display device), 플라즈마표시장치(Plasma Display Panel device), 전계발광표시장치(Electro Luminescent Display device), 유기발광다이오드표시장치(Organic Light-Emitting Diode Display device) 등이 연구되고 있다.With the recent development of information technology, the demand for the display field has been presented in various forms. For example, various flat panel display devices having characteristics such as thinning, lightening, and low power consumption, for example, a liquid crystal display device, a plasma display panel device, Electroluminescent display devices, organic light-emitting diode display devices, and the like have been studied.
한편, 상기 표시 장치 상에 부착되어 화면에 나타난 지시 내용을 사람의 손 또는 물체로 선택하여 사용자의 명령을 입력할 수 있도록 한 입력장치인 터치 패널 또는 터치 센서가 디스플레이 장치와 결합되어 화상 표시 기능 및 정보 입력 기능이 함께 구현된 전자 기기들이 개발되고 있다.On the other hand, an input device, a touch panel or a touch sensor, which is attached to the display device and allows a user to input a command by selecting an instruction displayed on the screen as a human hand or an object, is combined with a display device to display images Electronic devices with information input functions are being developed.
상기 터치 센서는 사용자로부터의 터치 입력을 정전용량 변화를 통해 전기적 신호로 변환하기 위한 센싱 전극들을 포함한다. 상기 센싱 전극들은 화상 표시 장치의 표시 영역 내에 배치되므로, 사용자에게 상기 센싱 전극들이 시인되는 경우, 화상 표시 장치로부터 구현되는 이미지 품질이 저해될 수 있다.The touch sensor includes sensing electrodes for converting a touch input from a user into an electrical signal through a change in capacitance. Since the sensing electrodes are disposed in a display area of the image display device, when the sensing electrodes are viewed by a user, image quality implemented from the image display device may be impaired.
예를 들면, 한국공개특허 제2014-0092366호에서와 같이 최근 다양한 화상 표시 장치에 터치 센서가 결합된 터치 스크린 패널이 개발되고 있다. 그러나, 상기 터치 센서의 전기적 특성, 센싱 감도를 열화시키지 않으면서 시인 현상을 억제하기 위한 센싱 전극 설계가 필요하다.For example, as in Korean Patent Publication No. 2014-0092366, a touch screen panel in which a touch sensor is combined with various image display devices has recently been developed. However, it is necessary to design a sensing electrode to suppress the visual phenomenon without deteriorating the electrical characteristics and sensing sensitivity of the touch sensor.
본 발명의 일 과제는 향상된 광학적, 전기적 특성을 갖는 터치 센서를 제공하는 것이다.One object of the present invention is to provide a touch sensor having improved optical and electrical properties.
본 발명의 일 과제는 향상된 광학적, 전기적 특성을 갖는 터치 센서를 포함하는 화상 표시 장치를 제공하는 것이다.One object of the present invention is to provide an image display device including a touch sensor having improved optical and electrical characteristics.
본 발명의 일 과제는 향상된 광학적, 전기적 특성을 갖는 터치 센서를 포함하는 윈도우 적층체를 제공하는 것이다.One object of the present invention is to provide a window stack including a touch sensor having improved optical and electrical properties.
1. 기재층; 상기 기재층 상에서 행 방향으로 배열되며, 상기 행 방향으로의 양 단부들에 돌출부들이 형성된 제1 센싱 전극들; 상기 기재층 상에서 열 방향으로 배열되며 상기 열 방향으로 양 단부들에 형성된 연결부들에 의해 서로 일체로 연결된 제2 센싱 전극들; 및 상기 행 방향으로 이웃하는 상기 돌출부들과 전기적으로 연결된 브릿지 전극들을 포함하고, 상기 돌출부들은 상기 연결부를 사이에 두고 서로 마주보도록 이격되며, 상기 연결부는 리세스를 포함하는, 터치 센서.1. Base layer; First sensing electrodes arranged in the row direction on the substrate layer and having protrusions formed at both ends in the row direction; Second sensing electrodes arranged in the column direction on the substrate layer and integrally connected to each other by connecting portions formed at both ends in the column direction; And bridge electrodes electrically connected to the adjacent protrusions in the row direction, and the protrusions are spaced apart from each other with the connection portion interposed therebetween, and the connection portion includes a recess.
2. 위 1에 있어서, 상기 돌출부는 상기 리세스 내로 삽입된, 터치 센서.2. In the above 1, wherein the protrusion is inserted into the recess, the touch sensor.
3. 위 2에 있어서, 상기 연결부는 상기 제2 센싱 전극의 상기 양 단부들과 인접한 제1 부분, 및 상기 리세스에 의해 상기 제1 부분보다 폭이 감소된 제2 부분을 포함하는, 터치 센서.3. In the above 2, wherein the connecting portion includes a first portion adjacent to both ends of the second sensing electrode, and a second portion whose width is reduced than the first portion by the recess, the touch sensor .
4. 위 3에 있어서, 상기 리세스의 상기 열 방향으로의 길이는 70 내지 200 ㎛인, 터치 센서.4. In the above 3, the length of the recess in the column direction is 70 to 200 μm, a touch sensor.
5. 위 3에 있어서, 상기 제2 부분의 폭은 50 내지 150㎛인, 터치 센서.5. In the above 3, the width of the second portion is 50 to 150㎛, the touch sensor.
6. 위 1에 있어서, 상기 기재층 상에서 상기 제1 센싱 전극들 및 상기 제2 센싱 전극들을 적어도 부분적으로 덮는 절연층을 더 포함하는, 터치 센서.6. The touch sensor according to the above 1, further comprising an insulating layer at least partially covering the first sensing electrodes and the second sensing electrodes on the base layer.
7. 위 6에 있어서, 상기 브릿지 전극은 상기 절연층 상에서 상기 리세스를 가로지르는, 터치 센서.7. The touch sensor according to the above 6, wherein the bridge electrode crosses the recess on the insulating layer.
8. 위 7에 있어서, 상기 브릿지 전극은 상기 절연층을 관통하여 상기 제1 센싱 전극의 상기 돌출부와 직접 접촉하는 콘택을 포함하는, 터치 센서.8. In the above 7, the bridge electrode comprises a contact through the insulating layer and in direct contact with the protrusion of the first sensing electrode, the touch sensor.
9. 위 1에 있어서, 상기 돌출부 및 상기 연결부의 코너부들은 라운드진 형상을 갖는, 터치 센서.9. The touch sensor according to the above 1, wherein the protrusions and the corners of the connecting portion have a rounded shape.
10. 위 1에 있어서, 상기 브릿지 전극의 코너부들은 라운드진 형상을 갖는, 터치 센서.10. The touch sensor according to the above 1, wherein the corner portions of the bridge electrode have a rounded shape.
11. 윈도우 기판; 및 상기 윈도우 기판 상에 적층된 위 1 내지 10중 어느 한 항의 터치 센서를 포함하는, 윈도우 적층체.11. Window substrate; And a touch sensor according to any one of the above 1 to 10 stacked on the window substrate.
12. 위 11에 있어서, 상기 윈도우 기판 및 상기 터치 센서 사이, 또는 상기 터치 센서 상에 배치된 편광층을 더 포함하는, 윈도우 적층체.12. The window laminate according to 11 above, further comprising a polarizing layer disposed between the window substrate and the touch sensor, or on the touch sensor.
13. 표시 패널; 및 상기 표시 패널 상에 적층된 위 1 내지 10중 어느 한 항의 터치 센서를 포함하는, 화상 표시 장치.13. Display panel; And a touch sensor according to any one of the above 1 to 10 stacked on the display panel.
본 발명의 실시예들에 따르는 터치 센서에 있어서, 예를 들면 열 방향 센싱 전극들 및 행 방향 센싱 전극들의 교차 영역의 패턴 형상을 조절하여 상기 교차 영역에서의 전극 패턴 중첩에 따른 전극 시인 현상을 억제할 수 있다.In the touch sensor according to the embodiments of the present invention, for example, by controlling the pattern shape of the cross region of the column-direction sensing electrodes and the row-direction sensing electrodes, the electrode visibility phenomenon caused by the electrode pattern overlap in the cross-region is suppressed can do.
일부 실시예들에 있어서, 상기 교차 영역에서의 상기 패턴 형상을 라운드 처리하여 전극 시인 현상을 추가적으로 억제할 수 있다.In some embodiments, the electrode shape may be further suppressed by rounding the pattern shape in the cross region.
도 1은 정전 용량 타입의 터치 센서의 전극 배열의 일 예를 나타내는 개략적인 평면도이다.1 is a schematic plan view showing an example of an electrode arrangement of a capacitive touch sensor.
도 2 및 도 3은 각각 예시적인 실시예들에 따른 터치 센서의 교차 영역 구조를 나타내는 평면도 및 단면도이다.2 and 3 are a plan view and a cross-sectional view, respectively, showing a cross-region structure of a touch sensor according to example embodiments.
도 4은 일부 예시적인 실시예들에 따른 터치 센서의 교차 영역 구조를 나타내는 평면도이다.Fig. 4 is a plan view showing a structure of a cross region of a touch sensor according to some example embodiments.
도 5는 예시적인 실시예들에 따른 윈도우 적층체 및 화상 표시 장치를 나타내는 개략적인 도면이다.5 is a schematic diagram illustrating a window stack and an image display device according to example embodiments.
도 6 및 도 7은 연결부의 폭 변화에 따른 채널 저항 측정 결과를 나타내는 그래프들이다.6 and 7 are graphs showing channel resistance measurement results according to a change in the width of the connecting portion.
도 8은 연결부에 포함된 리세스의 길이 변화에 따른 채널 저항 측정 결과를 나타내는 그래프이다.8 is a graph showing a result of measuring a channel resistance according to a change in length of a recess included in a connection part.
본 발명의 실시예들은 센싱 전극들의 교차 영역에서 돌출부 및 리세스를 포함하며 전극 시인이 억제된 터치 센서를 제공한다. 또한, 상기 터치 센서를 포함하는 윈도우 적층체 및 화상 표시 장치를 제공한다.Embodiments of the present invention provide a touch sensor that includes a protrusion and a recess at a crossing region of sensing electrodes and has an electrode visibility suppressed. In addition, a window stack and an image display device including the touch sensor are provided.
이하 도면을 참고하여, 본 발명의 실시예들을 보다 구체적으로 설명하도록 한다. 다만, 본 명세서에 첨부되는 다음의 도면들은 본 발명의 바람직한 실시예를 예시하는 것이며, 전술한 발명의 내용과 함께 본 발명의 기술사상을 더욱 이해시키는 역할을 하는 것이므로, 본 발명은 그러한 도면에 기재된 사항에만 한정되어 해석되어서는 아니된다.Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the following drawings attached to this specification are intended to illustrate preferred embodiments of the present invention, and serve to further understand the technical idea of the present invention together with the contents of the present invention, the present invention is described in such drawings It should not be interpreted as being limited to the matter.
본 출원에서 사용되는 용어 "열 방향" 및 "행 방향"은 서로 교차하는 두 방향을 지칭하기 위해 상대적으로 사용되며, 절대적인 두 방향을 지칭하는 것은 아니다.The terms "column direction" and "row direction" used in this application are used relatively to refer to two directions intersecting each other, and not to refer to two absolute directions.
도 1은 정전 용량 타입의 터치 센서의 전극 배열의 일 예를 나타내는 개략적인 평면도이다.1 is a schematic plan view showing an example of an electrode arrangement of a capacitive touch sensor.
도 1을 참조하면, 터치 센서는 예를 들면, 기재층(100) 상에 배치된 제1 센싱 전극들(50) 및 제2 센싱 전극들(60)을 포함할 수 있다.Referring to FIG. 1, the touch sensor may include, for example, first sensing electrodes 50 and second sensing electrodes 60 disposed on the base layer 100.
기재층(100)은 센싱 전극들(50, 60) 형성을 위한 지지층, 층간 절연층 또는 필름 타입 기재를 포괄하는 의미로 사용된다. 예를 들면, 기재 층(100)은 터치 센서에 통상적으로 사용되는 필름 소재가 특별한 제한 없이 사용될 수 있으며, 예를 들면, 유리, 고분자 및/또는 무기 절연 물질을 포함할 수 있다. 상기 고분자의 예로서, 환형올레핀중합체(COP), 폴리에틸렌테레프탈레이트(PET), 폴리아크릴레이트(PAR), 폴리에테르이미드(PEI), 폴리에틸렌나프탈레이트(PEN), 폴리페닐렌설파이드(PPS), 폴리알릴레이트(polyallylate), 폴리이미드(PI), 셀룰로오스 아세테이트 프로피오네이트(CAP), 폴리에테르술폰(PES), 셀룰로오스 트리아세테이트(TAC), 폴리카보네이트(PC), 환형올레핀공중합체(COC), 폴리메틸메타크릴레이트(PMMA) 등을 들 수 있다. 상기 무기 절연 물질의 예로서, 실리콘 산화물, 실리콘 질화물, 실리콘 산질화물, 금속 산화물 등을 들 수 있다.The base layer 100 is used in a sense to encompass a support layer for forming the sensing electrodes 50 and 60, an interlayer insulating layer, or a film type substrate. For example, the base layer 100 may be a film material commonly used in touch sensors without particular limitation, and may include, for example, glass, polymer, and/or inorganic insulating materials. Examples of the polymer, cyclic olefin polymer (COP), polyethylene terephthalate (PET), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyphenylene sulfide (PPS), poly Allylate (polyallylate), polyimide (PI), cellulose acetate propionate (CAP), polyethersulfone (PES), cellulose triacetate (TAC), polycarbonate (PC), cyclic olefin copolymer (COC), poly And methyl methacrylate (PMMA). Examples of the inorganic insulating material include silicon oxide, silicon nitride, silicon oxynitride, and metal oxide.
일부 실시예들에 있어서, 상기 터치 센서가 삽입되는 화상 표시 장치의 층 또는 필름 부재가 기재층(100)으로 제공될 수도 있다. 예를 들면, 디스플레이 패널에 포함되는 인캡슐레이션 층 또는 패시베이션 층 등이 기재층(100)으로 제공될 수도 있다.In some embodiments, a layer or film member of the image display device into which the touch sensor is inserted may be provided as the base layer 100. For example, an encapsulation layer or a passivation layer included in the display panel may be provided as the base layer 100.
제1 센싱 전극들(50) 및 제2 센싱 전극들(60)은 서로 다른 교차하는 두 방향을 따라 배열될 수 있다. 예를 들면, 제1 센싱 전극들(50)은 기재층(100) 상면의 행 방향(또는 X 방향)을 따라 배열될 수 있다. 제2 센싱 전극들(60)은 기재층(100) 상면의 열 방향(또는 Y 방향)을 따라 배열될 수 있다.The first sensing electrodes 50 and the second sensing electrodes 60 may be arranged along two different crossing directions. For example, the first sensing electrodes 50 may be arranged along the row direction (or X direction) of the upper surface of the base layer 100. The second sensing electrodes 60 may be arranged along the column direction (or Y direction) of the upper surface of the base layer 100.
상기 열 방향을 따라 이웃하는 제2 센싱 전극들(60)은 연결부(65)에 의해 서로 연결될 수 있다. 연결부(65)는 제2 센싱 전극들(60)과 일체로 연결되어 실질적으로 단일 부재로 제공될 수 있다.The second sensing electrodes 60 neighboring along the column direction may be connected to each other by a connection unit 65. The connecting portion 65 may be integrally connected to the second sensing electrodes 60 to be provided as a substantially single member.
복수의 제2 센싱 전극들(60)이 연결부(65)에 의해 서로 일체로 연결되어 제2 센싱 전극 열이 정의될 수 있다. 또한, 복수의 상기 제2 센싱 전극 열들이 상기 행 방향을 따라 배치될 수 있다.The plurality of second sensing electrodes 60 may be integrally connected to each other by the connection unit 65 to define a second sensing electrode column. Also, a plurality of the second sensing electrode columns may be arranged along the row direction.
제1 센싱 전극들(50) 각각은 독립된 섬(island) 패턴 형상을 가질 수 있다. 상기 행 방향으로 이웃하는 제1 센싱 전극들(50)은 브릿지 전극(55)을 통해 서로 전기적으로 연결될 수 있다. Each of the first sensing electrodes 50 may have an independent island pattern shape. The first sensing electrodes 50 neighboring in the row direction may be electrically connected to each other through the bridge electrode 55.
이에 따라, 브릿지 전극(55)을 통해 서로 연결된 복수의 제1 센싱 전극들(50)을 포함하는 제1 센싱 전극 행이 정의될 수 있다. 또한, 복수의 상기 제1 센싱 전극 행들이 상기 열 방향을 따라 배치될 수 있다.Accordingly, a first sensing electrode row including a plurality of first sensing electrodes 50 connected to each other through the bridge electrode 55 may be defined. Also, a plurality of the first sensing electrode rows may be arranged along the column direction.
제1 및 제2 센싱 전극들(50, 60), 및/또는 브릿지 전극(55)은 예를 들면, 인듐주석산화물(ITO), 인듐아연산화물(IZO), 아연산화물(ZnO), 인듐아연주석산화물(IZTO), 카드뮴주석산화물(CTO) 등과 같은 투명 도전성 산화물, 은나노와이어(AgNW), 카본나노튜브(CNT), 그라핀, 메탈메쉬, 전도성 고분자 등과 같은 투명 도전성 재료를 포함할 수 있다.The first and second sensing electrodes 50 and 60, and/or the bridge electrode 55 are, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin It may include transparent conductive materials such as oxide (IZTO), cadmium tin oxide (CTO), silver nanowires (AgNW), carbon nanotubes (CNT), graphene, metal mesh, and conductive polymers.
일부 실시예들에 있어서, 브릿지 전극(55)은 은(Ag), 금(Au), 구리(Cu), 알루미늄(Al), 백금(Pt), 팔라듐(Pd), 크롬(Cr), 티타늄(Ti), 텅스텐(W), 니오븀(Nb), 탄탈륨(Ta), 바나듐(V), 철(Fe), 망간(Mn), 코발트(Co), 니켈(Ni), 아연(Zn), 몰리브덴(Mo), 칼슘(Ca), 또는 이들의 합금을 포함할 수 있다. In some embodiments, the bridge electrode 55 is silver (Ag), gold (Au), copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), titanium ( Ti), tungsten (W), niobium (Nb), tantalum (Ta), vanadium (V), iron (Fe), manganese (Mn), cobalt (Co), nickel (Ni), zinc (Zn), molybdenum ( Mo), calcium (Ca), or alloys thereof.
일부 실시예들에 있어서, 제1 및 제2 센싱 전극들(50, 60), 및/또는 브릿지 전극(55)은 투명도전성 산화물층 및 금속층의 적층 구조를 포함할 수 있다. In some embodiments, the first and second sensing electrodes 50 and 60 and/or the bridge electrode 55 may include a stacked structure of a transparent conductive oxide layer and a metal layer.
일부 실시예들에 있어서, 브릿지 전극(55)은 상기 제1 센싱 전극 행을 통한 채널 저항 감소를 위해 저저항 금속을 포함하도록 형성될 수 있다. 일부 실시예들에 있어서, 제1 및 제2 센싱 전극들(50, 60)은 터치 센서의 투과도 향상을 위해 상술한 투명 도전성 산화물을 포함할 수 있다.In some embodiments, the bridge electrode 55 may be formed to include a low-resistance metal to reduce channel resistance through the first sensing electrode row. In some embodiments, the first and second sensing electrodes 50 and 60 may include the transparent conductive oxide described above to improve the transmittance of the touch sensor.
상기 제1 센싱 전극 행 및 상기 제2 센싱 전극 열 각각으로부터는 트레이스가 분기되어 연장될 수 있다. 예를 들면, 상기 제1 센싱 전극 행 각각으로부터 제1 트레이스(70)가 연장되며, 상기 제2 센싱 전극 열 각각으로부터 제2 트레이스(80)가 연장될 수 있다.Traces may be extended from each of the first sensing electrode row and the second sensing electrode column. For example, a first trace 70 may extend from each of the first sensing electrode rows, and a second trace 80 may extend from each of the second sensing electrode columns.
제1 및 제2 트레이스들(70, 80)의 말단부들은 기재층(100)의 일 단부에 할당된 본딩 영역으로 집합될 수 있다. 상기 말단부들은 예를 들면, 연성 인쇄 회로 기판(FPCB)과 이방성 도전 필름(ACF)을 통해 본딩될 수 있다. 상기 연성 인쇄 회로 기판을 통해 터치 센서 구동 IC 칩이 제1 및 제2 트레이스들(70, 80)과 전기적으로 연결될 수 있다.The distal ends of the first and second traces 70 and 80 may be aggregated into a bonding region assigned to one end of the base layer 100. The end portions may be bonded, for example, through a flexible printed circuit board (FPCB) and an anisotropic conductive film (ACF). A touch sensor driving IC chip may be electrically connected to the first and second traces 70 and 80 through the flexible printed circuit board.
제1 및 제2 트레이스들(70, 80)은 은(Ag), 금(Au), 구리(Cu), 알루미늄(Al), 백금(Pt), 팔라듐(Pd), 크롬(Cr), 티타늄(Ti), 텅스텐(W), 니오븀(Nb), 탄탈륨(Ta), 바나듐(V), 철(Fe), 망간(Mn), 코발트(Co), 니켈(Ni), 아연(Zn), 몰리브덴(Mo), 칼슘(Ca), 또는 이들의 합금(예를 들면, 은-팔라듐-구리(APC))을 포함할 수 있다. 이들은 단독으로 혹은 2 이상이 조합되어 사용될 수 있다.The first and second traces 70 and 80 are silver (Ag), gold (Au), copper (Cu), aluminum (Al), platinum (Pt), palladium (Pd), chromium (Cr), titanium ( Ti), tungsten (W), niobium (Nb), tantalum (Ta), vanadium (V), iron (Fe), manganese (Mn), cobalt (Co), nickel (Ni), zinc (Zn), molybdenum ( Mo), calcium (Ca), or alloys thereof (eg, silver-palladium-copper (APC)). These may be used alone or in combination of two or more.
도 1에 점선으로 표시된 교차 영역(C)에서는 브릿지 전극(55) 및 연결부(65)가 평면 방향에서 서로 교차하며 중첩될 수 있다. 또한, 도 3에 도시된 바와 같이, 브릿지 전극(55) 및 연결부(65)는 절연층(120)을 사이에 두고 서로 마주볼 수 있다.In the crossing region C indicated by a dotted line in FIG. 1, the bridge electrode 55 and the connecting portion 65 may overlap each other in the plane direction. In addition, as illustrated in FIG. 3, the bridge electrode 55 and the connection portion 65 may face each other with the insulating layer 120 interposed therebetween.
따라서, 교차 영역(C)에서는 예를 들면, 층간 굴절률 차이에 따른 계면 반사 증가, 색감 차이에 따라 사용자에게 전극 시인을 초래할 수 있다.Therefore, in the crossing region C, for example, an increase in interfacial reflection due to a difference in refractive index between layers and an electrode visibility to a user may be caused by a difference in color.
도 2 및 도 3은 각각 예시적인 실시예들에 따른 터치 센서의 교차 영역 구조를 나타내는 평면도 및 단면도이다. 구체적으로, 도 3은 도 2의 I-I' 라인을 따라 두께 방향으로 절단한 단면도이다.2 and 3 are a plan view and a cross-sectional view, respectively, showing a cross-region structure of a touch sensor according to example embodiments. Specifically, FIG. 3 is a cross-sectional view taken along the line I-I' of FIG. 2 in the thickness direction.
도 2 및 도 3을 참조하면, 도 1을 참조로 설명한 바와 같이, 제1 센싱 전극들(110)은 제2 센싱 전극들(130)과 일체로 연결된 연결부(135)를 사이에 두고 서로 물리적으로 이격될 수 있다. 브릿지 전극(115)은 절연층(120) 상에서 연결부(135)와 교차하며 평면 방향에서 중첩될 수 있다.2 and 3, as described with reference to FIG. 1, the first sensing electrodes 110 are physically connected to each other with a connection part 135 integrally connected to the second sensing electrodes 130 interposed therebetween. Can be separated. The bridge electrode 115 intersects the connection portion 135 on the insulating layer 120 and may overlap in the planar direction.
예시적인 실시예들에 따르면, 제1 센싱 전극(110)의 상기 행 방향으로의 양 단부에는 돌출부(112)가 형성될 수 있다. 이웃하는 제1 센싱 전극들(110)의 돌출부(112)들은 상기 행 방향으로 마주보도록 이격될 수 있다.According to exemplary embodiments, protrusions 112 may be formed at both ends of the first sensing electrode 110 in the row direction. The protrusions 112 of the adjacent first sensing electrodes 110 may be spaced apart so as to face each other in the row direction.
제2 센싱 전극들(130)은 상기 열 방향으로의 양 단부에 형성된 연결부들(135)을 통해 일체로 연결될 수 있다. 예시적인 실시예들에 따르면, 연결부(135)는 상기 행 방향으로 오목한 리세스(recess)(132)를 포함할 수 있다.The second sensing electrodes 130 may be integrally connected through connection parts 135 formed at both ends in the column direction. According to exemplary embodiments, the connection portion 135 may include a recess 132 recessed in the row direction.
도 2에 도시된 바와 같이, 하나의 연결부(135)에 상기 행 방향으로 서로 마주보는 한 쌍의 리세스들(132)이 형성될 수 있다. 연결부(135)는 리세스들(132)에 의해 폭이 감소된 중앙부를 포함할 수 있다.As shown in FIG. 2, a pair of recesses 132 facing each other in the row direction may be formed in one connection portion 135. The connection portion 135 may include a central portion whose width is reduced by the recesses 132.
예를 들면, 연결부(135)는 제1 부분(135a) 및 제2 부분(135b)을 포함할 수 있다. 제1 부분(135a)은 연결부(135) 중 제2 센싱 전극(130)과 직접 연결된 양 단부들을 포함할 수 있다. 제2 부분(135b)은 리세스(132)에 의해 폭이 좁아진 부분을 포함할 수 있다. 예시적인 실시예들에 따르면, 한 쌍의 제1 부분들(135a)이 제2 부분(135b)의 양 단부들과 연결될 수 있다.For example, the connection portion 135 may include a first portion 135a and a second portion 135b. The first portion 135a may include both ends connected directly to the second sensing electrode 130 of the connection portion 135. The second portion 135b may include a portion narrowed by the recess 132. According to example embodiments, a pair of first portions 135a may be connected to both ends of the second portion 135b.
일부 실시예들에 있어서, 제1 센싱 전극(110)에 포함된 돌출부(112)는 제2 센싱 전극(130)의 연결부(135)에 포함된 리세스(132) 내로 삽입될 수 있다. 상기 행 방향으로 이웃하는 한 쌍의 돌출부들(112)는 연결부(135) 또는 제2 부분(135b)를 사이에 두고 서로 마주볼 수 있다.In some embodiments, the protrusion 112 included in the first sensing electrode 110 may be inserted into the recess 132 included in the connection 135 of the second sensing electrode 130. The pair of adjacent protrusions 112 in the row direction may face each other with the connecting portion 135 or the second portion 135b interposed therebetween.
절연층(120)은 제1 및 제2 센싱 전극들(110, 130)을 적어도 부분적으로 덮을 수 있다. 브릿지 전극(115)은 절연층(120) 상에서 상기 행 방향으로 이웃하는 제1 센싱 전극들(110)을 서로 전기적으로 연결시킬 수 있다.The insulating layer 120 may at least partially cover the first and second sensing electrodes 110 and 130. The bridge electrode 115 may electrically connect the first sensing electrodes 110 adjacent to each other in the row direction on the insulating layer 120.
도 3에 도시된 바와 같이, 브릿지 전극(115)은 절연층(120)을 관통하며 제1 센싱 전극(110)과 접촉하는 콘택(115a)을 포함할 수 있다. 예시적인 실시예들에 따르면, 브릿지 전극(115)에 포함된 콘택(115a)은 제1 센싱 전극(110)의 돌출부(112)의 상면과 직접 접촉할 수 있다.As shown in FIG. 3, the bridge electrode 115 may include a contact 115a penetrating the insulating layer 120 and contacting the first sensing electrode 110. According to exemplary embodiments, the contact 115a included in the bridge electrode 115 may directly contact the top surface of the protrusion 112 of the first sensing electrode 110.
절연층(120) 상에는 브릿지 전극(115)을 덮는 패시베이션 층(140)이 형성될 수 있다. 절연층(120) 및 패시베이션 층(140)은 실록산계 수지, 아크릴계 수지 등과 같은 유기 절연 물질, 또는 실리콘 산화물, 실리콘 질화물, 실리콘 산질화물 등과 같은 무기 절연 물질을 포함할 수 있다.A passivation layer 140 covering the bridge electrode 115 may be formed on the insulating layer 120. The insulating layer 120 and the passivation layer 140 may include organic insulating materials such as siloxane-based resins and acrylic resins, or inorganic insulating materials such as silicon oxide, silicon nitride, and silicon oxynitride.
상술한 바와 같이, 도 1에 표시된 교차 영역(C)에서 제1 센싱 전극(110)의 돌출부(112), 및 제2 센싱 전극(130)의 리세스(132) 또는 제2 부분(135b)을 통해 전극이 점유하는 면적을 감소시킬 수 있다. 따라서, 교차 영역(C)에서 초래되는 전극 시인 현상을 감소 또는 억제시킬 수 있다.As described above, the protrusion 112 of the first sensing electrode 110 and the recess 132 or the second part 135b of the second sensing electrode 130 in the crossing region C shown in FIG. Through this, the area occupied by the electrode can be reduced. Therefore, it is possible to reduce or suppress the phenomenon of electrode visibility resulting from the crossing region (C).
또한, 리세스(132)를 통해 돌출부들(112) 사이의 거리를 감소시켜, 브릿지 전극(115)의 길이를 축소시킬 수 있다. 따라서, 전극층 중첩에 따른 전극 시인 현상을 억제 또는 감소시킬 수 있다. In addition, the distance between the protrusions 112 may be reduced through the recess 132 to reduce the length of the bridge electrode 115. Therefore, it is possible to suppress or reduce the phenomenon of electrode visibility due to overlapping of the electrode layers.
연결부(135)에서는 상대적으로 제1 부분(135a)의 면적을 증가시켜 제2 부분(135b)에 의한 제2 센싱 전극 열에서의 채널 저항의 지나친 증가를 방지할 수 있다.In the connection portion 135, the area of the first portion 135a is relatively increased to prevent an excessive increase in channel resistance in the second sensing electrode column by the second portion 135b.
그러므로, 교차 영역(C)에서 전극들이 중첩되는 면적 또는 크기는 감소시켜 전극 시인을 억제하면서, 채널 저항의 증가는 방지하여 적절한 신호 전달 속도를 유지할 수 있다.Therefore, the area or size where the electrodes overlap in the crossing region C is reduced to suppress electrode visibility, while preventing an increase in channel resistance to maintain an appropriate signal transmission rate.
다시 도 2를 참조하면, 연결부(135)의 제2 부분(135b)의 폭(b)은 연결부(135)의 제1 부분(135a)의 폭(a)보다 작을 수 있다. 일부 실시예들에 있어서, 연결부(135)의 제2 부분(135b)의 폭(행 방향으로의 폭)(b)은 약 50 내지 150㎛일 수 있다. 예를 들면, 제2 부분(135b)의 폭은 약 50㎛ 미만인 경우, 제2 센싱 전극 열의 채널 저항이 지나치게 증가할 수 있다. 제2 부분(135b)의 폭이 약 150㎛를 초과하는 경우, 상술한 전극 시인 방지 효과 구현이 용이하지 않을 수 있으며, 채널 저항 감소 효과도 약화될 수 있다. 일 실시예에 있어서, 제2 부분(135b)의 폭은 약 50 내지 100㎛일 수 있다.Referring to FIG. 2 again, the width b of the second portion 135b of the connection portion 135 may be smaller than the width a of the first portion 135a of the connection portion 135. In some embodiments, the width (width in the row direction) b of the second portion 135b of the connection portion 135 may be about 50 to 150 μm. For example, when the width of the second portion 135b is less than about 50 μm, the channel resistance of the second sensing electrode row may increase excessively. When the width of the second portion 135b exceeds about 150 μm, it may not be easy to implement the above-described electrode visibility preventing effect, and the effect of reducing the channel resistance may also be weakened. In one embodiment, the width of the second portion 135b may be about 50 to 100 μm.
일부 실시예들에 있어서, 리세스(132)의 길이(상기 열 방향으로의 길이)(c)는 약 70 내지 200 ㎛일 수 있다. 리세스(132)의 길이가 약 70㎛ 미만인 경우, 돌출부(112)의 폭도 함께 지나치게 감소하여 제1 센싱 전극 행의 채널 저항이 지나치게 증가할 수 있다. 또한, 돌출부(112) 및 연결부(135) 사이의 충분한 간격이 확보되지 않아 상호 신호 간섭이 발생할 수도 있다.In some embodiments, the length of the recess 132 (length in the column direction) c may be about 70 to 200 μm. When the length of the recess 132 is less than about 70 μm, the width of the protrusion 112 is also excessively reduced, so that the channel resistance of the first sensing electrode row may be excessively increased. In addition, since a sufficient gap between the protrusion 112 and the connection portion 135 is not secured, mutual signal interference may occur.
리세스(132)의 길이가 약 200㎛를 초과하는 경우, 제2 센싱 전극 열의 길이가 지나치게 증가하여 오히려 채널 저항 증가를 초래할 수 있다.When the length of the recess 132 exceeds about 200 μm, the length of the second sensing electrode row is excessively increased, which may lead to an increase in channel resistance.
바람직하게는, 리세스(132)의 길이는 약 100 내지 200 ㎛일 수 있다.Preferably, the length of the recess 132 may be about 100 to 200 μm.
도 4는 일부 예시적인 실시예들에 따른 터치 센서의 교차 영역 구조를 나타내는 평면도이다.Fig. 4 is a plan view showing a cross-region structure of a touch sensor according to some example embodiments.
도 4를 참조하면, 제1 센싱 전극(110)에 포함된 돌출부(113) 및 제2 센싱 전극(130)의 연결부(137)에 형성된 리세스(132)의 코너부들은 라운드진 형상을 가질 수 있다. 이에 따라, 연결부(137)의 제1 부분(137a) 및 제2 부분(137b)의 코너부들 역시 라운드진 형상을 가질 수 있다.Referring to FIG. 4, corner portions of the protrusions 113 included in the first sensing electrode 110 and the recesses 132 formed in the connecting portion 137 of the second sensing electrode 130 may have a rounded shape. have. Accordingly, corner portions of the first portion 137a and the second portion 137b of the connecting portion 137 may also have a rounded shape.
전극의 코너부들이 라운드 처리됨에 따라, 급격한 패턴 프로파일 변화에 따른 전극 시인 현상을 추가적으로 억제할 수 있다. 또한 라운드진 프로파일을 도입함에 따라, 상기 터치 센서가 실장되는 디스플레이 패널의 전극, 배선들과의 중첩에 따른 모아레 현상을 감소시킬 수 있다.As the corner portions of the electrode are rounded, it is possible to further suppress the electrode visibility phenomenon due to the rapid pattern profile change. In addition, by introducing a rounded profile, it is possible to reduce the moiré phenomenon caused by overlap of electrodes and wirings of the display panel on which the touch sensor is mounted.
일부 실시예들에 있어서, 브릿지 전극(117)의 코너부들 역시 라운드 처리될 수 있으며, 상술한 전극 시인 방지 및 모아레 방지를 보다 효과적으로 구현할 수 있다.In some embodiments, corner portions of the bridge electrode 117 may also be rounded, and the above-described electrode visibility prevention and moiré prevention may be more effectively implemented.
도 5는 예시적인 실시예들에 따른 윈도우 적층체 및 화상 표시 장치를 나타내는 개략적인 도면이다.5 is a schematic diagram illustrating a window stack and an image display device according to example embodiments.
도 5를 참조하면, 윈도우 적층체(250)는 윈도우 기판(230), 편광층(210) 및 상술한 예시적인 실시예들에 따른 터치 센서(200)을 포함할 수 있다.Referring to FIG. 5, the window stack 250 may include a window substrate 230, a polarization layer 210, and a touch sensor 200 according to the exemplary embodiments described above.
윈도우 기판(230)은 예를 들면 하드 코팅 필름을 포함하며, 일 실시예에 있어서, 윈도우 기판(230)의 일면의 주변부 상에 차광 패턴(235)이 형성될 수 있다. 차광 패턴(235)은 예를 들면 컬러 인쇄 패턴을 포함할 수 있으며, 단층 또는 복층 구조를 가질 수 있다. 차광 패턴(235)에 의해 화상 표시 장치의 베젤 영역 혹은 비표시 영역이 정의될 수 있다.The window substrate 230 may include, for example, a hard coating film, and in one embodiment, a light blocking pattern 235 may be formed on a peripheral portion of one surface of the window substrate 230. The light blocking pattern 235 may include, for example, a color print pattern, and may have a single layer or multi-layer structure. The bezel area or the non-display area of the image display device may be defined by the light blocking pattern 235.
편광층(210)은 코팅형 편광자 또는 편광판을 포함할 수 있다. 상기 코팅형 편광자는 중합성 액정 화합물 및 이색성 염료를 포함하는 액정 코팅층을 포함할 수 있다. 이 경우, 편광층(210)은 상기 액정 코팅층에 배향성을 부여하기 위한 배향막을 더 포함할 수 있다The polarizing layer 210 may include a coated polarizer or a polarizing plate. The coated polarizer may include a liquid crystal coating layer including a polymerizable liquid crystal compound and a dichroic dye. In this case, the polarization layer 210 may further include an alignment layer for imparting alignment to the liquid crystal coating layer.
예를 들면, 상기 편광판은 폴리비닐알코올계 편광자 및 상기 폴리비닐알코올계 편광자의 적어도 일면에 부착된 보호필름을 포함할 수 있다.For example, the polarizing plate may include a polyvinyl alcohol-based polarizer and a protective film attached to at least one surface of the polyvinyl alcohol-based polarizer.
편광층(210)은 윈도우 기판(230)의 상기 일면과 직접 접합되거나, 제1 점접착층(220)을 통해 부착될 수도 있다.The polarization layer 210 may be directly bonded to the one surface of the window substrate 230 or may be attached through the first point adhesive layer 220.
터치 센서(200)는 필름 또는 패널 형태로 윈도우 적층체(250)에 포함될 수 있다. 일 실시예에 있어서, 터치 센서(200)는 제2 점접착층(225)를 통해 편광층(210)과 결합될 수 있다.The touch sensor 200 may be included in the window stack 250 in the form of a film or panel. In one embodiment, the touch sensor 200 may be combined with the polarization layer 210 through the second point adhesive layer 225.
도 5에 도시된 바와 같이, 사용자의 시인측으로부터 윈도우 기판(230), 편광층(210) 및 터치 센서(200) 순으로 배치될 수 있다. 이 경우, 터치 센서(200)의 전극층이 편광층(210) 아래에 배치되므로 전극 시인 현상을 방지할 수 있다. 또한, 상술한 교차 영역(C)에서의 전극 구조를 통해 전극 시인 현상을 보다 효과적으로 방지할 수 있다.As illustrated in FIG. 5, the window substrate 230, the polarization layer 210, and the touch sensor 200 may be arranged in order from the user's viewing side. In this case, since the electrode layer of the touch sensor 200 is disposed under the polarization layer 210, the electrode visibility phenomenon can be prevented. In addition, the electrode visibility phenomenon can be more effectively prevented through the electrode structure in the above-mentioned crossing region (C).
일 실시예에 있어서, 터치 센서(200)는 윈도우 기판(230) 또는 편광층(210) 상에 직접 전사될 수도 있다. 일 실시예에 있어서, 사용자의 시인측으로부터 윈도우 기판(230), 터치 센서(200) 및 편광층(210) 순으로 배치될 수도 있다.In one embodiment, the touch sensor 200 may be directly transferred onto the window substrate 230 or the polarization layer 210. In an embodiment, the window substrate 230, the touch sensor 200, and the polarization layer 210 may be arranged in the order of the user's view side.
상기 화상 표시 장치는 표시 패널(360) 및 표시 패널(360) 상에 결합된 상술한 윈도우 적층체(250)를 포함할 수 있다.The image display device may include a display panel 360 and the above-described window stack 250 coupled to the display panel 360.
표시 패널(360)은 패널 기판(300) 상에 배치된 화소 전극(310), 화소 정의막(320), 표시층(330), 대향 전극(340) 및 인캡슐레이션 층(350)을 포함할 수 있다.The display panel 360 includes a pixel electrode 310, a pixel defining layer 320, a display layer 330, a counter electrode 340 and an encapsulation layer 350 disposed on the panel substrate 300. Can.
패널 기판(300) 상에는 박막 트랜지스터(TFT)를 포함하는 화소 회로가 형성되며, 상기 화소 회로를 덮는 절연막이 형성될 수 있다. 화소 전극(310)은 상기 절연막 상에서 예를 들면 TFT의 드레인 전극과 전기적으로 연결될 수 있다.A pixel circuit including a thin film transistor (TFT) is formed on the panel substrate 300, and an insulating layer covering the pixel circuit may be formed. The pixel electrode 310 may be electrically connected to the drain electrode of the TFT, for example, on the insulating film.
화소 정의막(320)은 상기 절연막 상에 형성되어 화소 전극(310)을 노출시켜 화소 영역을 정의할 수 있다. 화소 전극(310) 상에는 표시층(330)이 형성되며, 표시 층(330)은 예를 들면, 액정층 또는 유기 발광층을 포함할 수 있다.The pixel defining layer 320 is formed on the insulating layer to expose the pixel electrode 310 to define a pixel area. The display layer 330 is formed on the pixel electrode 310, and the display layer 330 may include, for example, a liquid crystal layer or an organic emission layer.
화소 정의막(320) 및 표시층(330) 상에는 대향 전극(340)이 배치될 수 있다. 대향 전극(340)은 예를 들면, 화상 표시 장치의 공통 전극 또는 캐소드로 제공될 수 있다. 대향 전극(340) 상에 표시 패널(360) 보호를 위한 인캡슐레이션 층(350)이 적층될 수 있다.The counter electrode 340 may be disposed on the pixel defining layer 320 and the display layer 330. The counter electrode 340 may be provided as, for example, a common electrode or cathode of the image display device. An encapsulation layer 350 for protecting the display panel 360 may be stacked on the counter electrode 340.
일부 실시예들에 있어서, 표시 패널(360) 및 윈도우 적층체(250)는 점접착층(260)을 통해 결합될 수도 있다. 예를 들면, 점접착층(260)의 두께는 제1 및 제2 점접착층(220, 225) 각각의 두께보다 클 수 있으며, -20 내지 80℃에서의 점탄성이 약 0.2MPa 이하일 수 있다. 이 경우, 표시 패널(360)로부터의 노이즈를 차폐할 수 있고, 굴곡 시에 계면 응력을 완화하여 윈도우 적층체(250)의 손상을 억제할 수 있다. 일 실시예에 있어서, 상기 점탄성은 약 0.01 내지 0.15MPa일 수 있다.In some embodiments, the display panel 360 and the window stack 250 may be combined through the point adhesive layer 260. For example, the thickness of the point adhesive layer 260 may be greater than the thickness of each of the first and second point adhesive layers 220 and 225, and the viscoelasticity at -20 to 80°C may be about 0.2 MPa or less. In this case, noise from the display panel 360 can be shielded, and interfacial stress can be relaxed during bending to suppress damage to the window stack 250. In one embodiment, the viscoelasticity may be about 0.01 to 0.15MPa.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예들을 포함하는 실험예를 제시하나, 이들 실시예는 본 발명을 예시하는 것일 뿐 첨부된 특허청구범위를 제한하는 것이 아니며, 본 발명의 범주 및 기술사상 범위 내에서 실시예에 대한 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.Hereinafter, experimental examples including preferred embodiments are provided to help understanding of the present invention, but these examples are only illustrative of the present invention and do not limit the appended claims, and the scope and technical idea of the present invention. It is apparent to those skilled in the art that various changes and modifications to the embodiments within the scope are possible, and it is natural that such modifications and modifications fall within the scope of the appended claims.
실험예 1: 연결부(제2 부분) 폭에 따른 채널 저항 측정Experimental Example 1: Measurement of channel resistance according to the width of the connection (second part)
COP 기재 상에 각 단위 전극 4mm x 4mm 사이즈의 제1 센싱 전극들 및 제2 센싱 전극들을 형성하였다. 제2 센싱 전극들은 연결부에 의해 일체로 연결되며, 상기 연결부에는 도 2에 도시된 바와 같이 폭이 좁아진 제2 부분이 포함되도록 리세스가 형성되었다. 제1 센싱 전극들은 상기 제2 부분을 사이에 두고 마주보도록 돌출부들을 포함하도록 형성하였다. 센싱 전극은 면저항 40Ω/□의 ITO를 이용해 형성되었다.On the COP substrate, first sensing electrodes and second sensing electrodes having a size of 4 mm x 4 mm for each unit electrode were formed. The second sensing electrodes are integrally connected by a connection portion, and a recess is formed in the connection portion to include a second portion with a narrow width as shown in FIG. 2. The first sensing electrodes were formed to include protrusions so as to face the second portion therebetween. The sensing electrode was formed using ITO having a sheet resistance of 40 Ω/□.
제1 및 제2 센싱 전극들을 덮는 절연층을 형성하고, 이웃하는 제1 센싱 전극들을 연결하도록 브릿지 전극을 형성하였다. 구체적으로 상기 절연층을 관통하는 30㎛ x 30㎛ 사이즈의 콘택 홀을 형성하고, 상기 절연층 상에 상기 콘택홀을 채우는 도전층을 증착 및 패터닝하여 브릿지 전극을 형성하였다.An insulating layer covering the first and second sensing electrodes was formed, and a bridge electrode was formed to connect neighboring first sensing electrodes. Specifically, a contact hole having a size of 30 µm x 30 µm penetrating the insulating layer was formed, and a conductive electrode filling the contact hole on the insulating layer was deposited and patterned to form a bridge electrode.
상기와 같이 제조된 터치 센서의 제1 센싱 전극 행 및 제2 센싱 전극 열을 통한 채널 저항을 각각 측정하였다.The channel resistance through the first sensing electrode row and the second sensing electrode column of the touch sensor manufactured as described above was measured, respectively.
도 6 및 도 7은 연결부의 폭 변화에 따른 채널 저항 측정 결과를 나타내는 그래프들이다.6 and 7 are graphs showing channel resistance measurement results according to a change in the width of the connecting portion.
구체적으로, 도 6은 면저항 40Ω/□의 ITO를 이용하여 60㎛의 폭의 브릿지 전극을 형성하고, 제2 센싱 전극의 연결부에 포함된 제1 부분의 폭(a)을 250㎛, 리세스의 길이(c)를 90㎛로 고정한 경우 제2 부분의 폭(b) 변화에 따른 채널 저항의 변화를 나타내고 있다. 도 7은 브릿지 전극을 면저항 0.2Ω/□의 금속을 사용하여 4㎛ 폭으로 형성한 것을 제외하고는 도 6과 동일한 조건에서의 채널 저항 결과를 나타내고 있다.Specifically, FIG. 6 forms a bridge electrode having a width of 60 µm using ITO having a sheet resistance of 40 Ω/□, and a width (a) of the first portion included in the connection portion of the second sensing electrode is 250 µm. When the length (c) is fixed to 90 µm, the channel resistance is changed according to the change in the width (b) of the second portion. 7 shows the channel resistance results under the same conditions as in FIG. 6, except that the bridge electrode was formed to a width of 4 μm using a metal having a sheet resistance of 0.2 Ω/□.
도 6 및 도 7을 참조하면, 제1 센싱 전극 행을 통한 채널 저항(x 저항)은 일정하게 유지되면서, 제2 부분의 폭이 약 50㎛를 초과하면서 제2 센싱 전극 열을 통한 채널 저항(y 저항) 감소 추세가 완만해짐을 알 수 있다.6 and 7, the channel resistance through the first sensing electrode row (x resistance) is maintained constant, while the width of the second portion exceeds about 50 μm while the channel resistance through the second sensing electrode column ( y resistance) It can be seen that the downward trend is slowing down.
실험예 2: 리세스 길이에 따른 채널 저항 측정Experimental Example 2: Measurement of channel resistance according to recess length
도 8은 연결부에 포함된 리세스의 길이 변화에 따른 채널 저항 측정 결과를 나타내는 그래프이다.8 is a graph showing a result of measuring a channel resistance according to a change in length of a recess included in a connection part.
구체적으로, 실험예 1과 동일한 재질 및 사이즈로 센싱 전극들 및 ITO 브릿지 전극을 형성하고, 제1 부분의 폭(a)을 250㎛, 제2 부분의 폭(b)을 75㎛로 고정한 상태에서 리세스의 길이(c)를 변화하면서 채널 저항의 변화를 측정하였다. 제1 센싱 전극에 포함된 돌출부의 폭은 리세스의 길이 변화에 따라 동일 비율로 함께 증가시켰다.Specifically, in the state in which the sensing electrodes and the ITO bridge electrode are formed in the same material and size as Experimental Example 1, and the width (a) of the first part is fixed to 250 μm and the width (b) of the second part is fixed to 75 μm. The change in channel resistance was measured while changing the length (c) of the recess. The width of the protrusion included in the first sensing electrode was increased together at the same rate according to the change in the length of the recess.
도 8을 참조하면, 리세스의 길이가 약 70㎛ 이상으로 증가하면서 제1 및 2 센싱 전극의 저항의 증감이 서로 상쇄되어 총 저항의 증가가 억제됨을 확인할 수 있다. 리세스의 길이가 약 100㎛ 이상인 경우, 총 저항이 실질적으로 일정하게 유지되었다.Referring to FIG. 8, it can be seen that as the length of the recess increases to about 70 μm or more, the increase and decrease of the resistance of the first and second sensing electrodes cancel each other, thereby suppressing an increase in the total resistance. When the length of the recess was about 100 µm or more, the total resistance was kept substantially constant.
도 6 내지 도 8을 참조로 설명한 바와 같이, 연결부 및 리세스의 사이즈 조절을 통해 채널 저항 증가를 억제하면서 전극 시인을 방지할 수 있음을 확인하였다.As described with reference to FIGS. 6 to 8, it was confirmed that electrode visibility can be prevented while suppressing an increase in channel resistance through size adjustment of the connecting portion and the recess.

Claims (13)

  1. 기재층;Base layer;
    상기 기재층 상에서 행 방향으로 배열되며, 상기 행 방향으로의 양 단부들에 돌출부들이 형성된 제1 센싱 전극들;First sensing electrodes arranged in the row direction on the substrate layer and having protrusions formed at both ends in the row direction;
    상기 기재층 상에서 열 방향으로 배열되며 상기 열 방향으로 양 단부들에 형성된 연결부들에 의해 서로 일체로 연결된 제2 센싱 전극들; 및Second sensing electrodes arranged in the column direction on the substrate layer and integrally connected to each other by connecting portions formed at both ends in the column direction; And
    상기 행 방향으로 이웃하는 상기 돌출부들과 전기적으로 연결된 브릿지 전극들을 포함하고,And bridge electrodes electrically connected to the protrusions neighboring in the row direction,
    상기 돌출부들은 상기 연결부를 사이에 두고 서로 마주보도록 이격되며, 상기 연결부는 리세스를 포함하는, 터치 센서.The protrusions are spaced to face each other with the connection portion interposed therebetween, and the connection portion includes a recess, a touch sensor.
  2. 청구항 1에 있어서, 상기 돌출부는 상기 리세스 내로 삽입된, 터치 센서.The touch sensor according to claim 1, wherein the protrusion is inserted into the recess.
  3. 청구항 2에 있어서, 상기 연결부는The method according to claim 2, wherein the connecting portion
    상기 제2 센싱 전극의 상기 양 단부들과 인접한 제1 부분; 및A first portion adjacent to both ends of the second sensing electrode; And
    상기 리세스에 의해 상기 제1 부분보다 폭이 감소된 제2 부분을 포함하는, 터치 센서.And a second portion whose width is reduced from the first portion by the recess.
  4. 청구항 3에 있어서, 상기 리세스의 상기 열 방향으로의 길이는 70 내지 200 ㎛인, 터치 센서.The touch sensor according to claim 3, wherein a length of the recess in the column direction is 70 to 200 μm.
  5. 청구항 3에 있어서, 상기 제2 부분의 폭은 50 내지 150㎛인, 터치 센서.The touch sensor according to claim 3, wherein the width of the second portion is 50 to 150 μm.
  6. 청구항 1에 있어서, 상기 기재층 상에서 상기 제1 센싱 전극들 및 상기 제2 센싱 전극들을 적어도 부분적으로 덮는 절연층을 더 포함하는, 터치 센서.The touch sensor according to claim 1, further comprising an insulating layer on the substrate layer to at least partially cover the first sensing electrodes and the second sensing electrodes.
  7. 청구항 6에 있어서, 상기 브릿지 전극은 상기 절연층 상에서 상기 리세스를 가로지르는, 터치 센서.The touch sensor according to claim 6, wherein the bridge electrode crosses the recess on the insulating layer.
  8. 청구항 7에 있어서, 상기 브릿지 전극은 상기 절연층을 관통하여 상기 제1 센싱 전극의 상기 돌출부와 직접 접촉하는 콘택을 포함하는, 터치 센서.The touch sensor according to claim 7, wherein the bridge electrode includes a contact penetrating the insulating layer and making direct contact with the protrusion of the first sensing electrode.
  9. 청구항 1에 있어서, 상기 돌출부 및 상기 연결부의 코너부들은 라운드진 형상을 갖는, 터치 센서.The touch sensor according to claim 1, wherein corner portions of the protrusion and the connecting portion have a rounded shape.
  10. 청구항 1에 있어서, 상기 브릿지 전극의 코너부들은 라운드진 형상을 갖는, 터치 센서.The touch sensor according to claim 1, wherein the corner portions of the bridge electrode have a rounded shape.
  11. 윈도우 기판; 및Window substrates; And
    상기 윈도우 기판 상에 적층된 청구항 1의 터치 센서를 포함하는, 윈도우 적층체.A window stack comprising the touch sensor of claim 1 stacked on the window substrate.
  12. 청구항 11에 있어서, 상기 윈도우 기판 및 상기 터치 센서 사이, 또는 상기 터치 센서 상에 배치된 편광층을 더 포함하는, 윈도우 적층체.The window laminate according to claim 11, further comprising a polarizing layer disposed between the window substrate and the touch sensor or disposed on the touch sensor.
  13. 표시 패널; 및Display panel; And
    상기 표시 패널 상에 적층된 청구항 1의 터치 센서를 포함하는, 화상 표시 장치.An image display device comprising the touch sensor of claim 1 stacked on the display panel.
PCT/KR2020/000743 2019-01-28 2020-01-15 Touch sensor and image display device including same WO2020159120A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0010553 2019-01-28
KR1020190010553A KR102526899B1 (en) 2019-01-28 2019-01-28 Touch sensor and image display device including the same

Publications (1)

Publication Number Publication Date
WO2020159120A1 true WO2020159120A1 (en) 2020-08-06

Family

ID=71478132

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2020/000743 WO2020159120A1 (en) 2019-01-28 2020-01-15 Touch sensor and image display device including same

Country Status (3)

Country Link
KR (1) KR102526899B1 (en)
CN (2) CN111488085A (en)
WO (1) WO2020159120A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130104857A (en) * 2012-03-15 2013-09-25 엘지디스플레이 주식회사 Electrostatic capacitive type touch-sensitive panel for display device
KR20140044118A (en) * 2012-10-04 2014-04-14 삼성전자주식회사 Touch panel
KR20170089467A (en) * 2016-01-26 2017-08-04 삼성디스플레이 주식회사 Touch panel and display apparatus including the same
KR20170112570A (en) * 2016-03-31 2017-10-12 동우 화인켐 주식회사 Touch sensor
KR20180123292A (en) * 2017-05-08 2018-11-16 엘지디스플레이 주식회사 Display device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323004B1 (en) * 2010-10-01 2013-10-29 엘지디스플레이 주식회사 Capacity type touch screen panel
TW201337705A (en) 2011-10-25 2013-09-16 Unipixel Displays Inc Polarizer resistive touch screen
KR102489262B1 (en) * 2016-01-13 2023-01-18 삼성디스플레이 주식회사 Touch screen panel and method of manufacturing the same
KR102535829B1 (en) * 2016-04-26 2023-05-24 삼성디스플레이 주식회사 Method of manufacturing liquid crystal display panel and liquid crystal display panel manufactured by the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130104857A (en) * 2012-03-15 2013-09-25 엘지디스플레이 주식회사 Electrostatic capacitive type touch-sensitive panel for display device
KR20140044118A (en) * 2012-10-04 2014-04-14 삼성전자주식회사 Touch panel
KR20170089467A (en) * 2016-01-26 2017-08-04 삼성디스플레이 주식회사 Touch panel and display apparatus including the same
KR20170112570A (en) * 2016-03-31 2017-10-12 동우 화인켐 주식회사 Touch sensor
KR20180123292A (en) * 2017-05-08 2018-11-16 엘지디스플레이 주식회사 Display device

Also Published As

Publication number Publication date
KR102526899B1 (en) 2023-04-27
CN111488085A (en) 2020-08-04
KR20200093280A (en) 2020-08-05
CN211015464U (en) 2020-07-14

Similar Documents

Publication Publication Date Title
WO2020256367A1 (en) Antenna coupling module and display device comprising same
CN211149427U (en) Touch sensor module, window stack structure and image display device
WO2020040583A1 (en) Touch sensor and image display device including same
WO2020235949A1 (en) Multi-sensor structure and image display device including same
WO2020159152A1 (en) Touch sensor, window laminate comprising same, and image display device comprising same
WO2020166882A1 (en) Touch sensor, window laminate including same, and image display device including same
WO2021085988A1 (en) Antenna structure and image display device comprising same
WO2020204434A1 (en) Flexible display module and image display device including same
KR102679652B1 (en) Touch sensor module, window stack structure including the same and image display device including the same
KR20210020526A (en) Touch sensor module, window stack structure including the same and image display device including the same
WO2020159120A1 (en) Touch sensor and image display device including same
WO2020159144A1 (en) Touch sensor laminate and image display device
WO2021162380A1 (en) Antenna insertion electrode structure and image display device including same
US11416093B2 (en) Touch sensor, method of manufacturing touch sensor, and image display device including touch sensor
WO2021177717A1 (en) Antenna package and image display device comprising same
WO2021085989A1 (en) Antenna structure and image display device comprising same
WO2021162379A1 (en) Electrode structure in which antenna is inserted, and image display device including same
KR102580014B1 (en) Flexible display module and image display device including the same
WO2021080300A1 (en) Touch sensor and image display apparatus comprising same
KR20210128752A (en) Touch sensor stack structure and method of manufacturing the same
WO2021206386A1 (en) Antenna insertion electrode structure and image display device comprising same
WO2023177109A1 (en) Touch sensor and image display device comprising same
WO2020141876A2 (en) Touch sensor and image display device including same
WO2020153621A1 (en) Touch sensor and image display device including same
WO2021194167A1 (en) Touch panel, window laminate formed thereby, and image display device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20749094

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20749094

Country of ref document: EP

Kind code of ref document: A1