WO2020151057A1 - 一种显示面板及其制作方法、显示装置 - Google Patents

一种显示面板及其制作方法、显示装置 Download PDF

Info

Publication number
WO2020151057A1
WO2020151057A1 PCT/CN2019/077360 CN2019077360W WO2020151057A1 WO 2020151057 A1 WO2020151057 A1 WO 2020151057A1 CN 2019077360 W CN2019077360 W CN 2019077360W WO 2020151057 A1 WO2020151057 A1 WO 2020151057A1
Authority
WO
WIPO (PCT)
Prior art keywords
cathode
layer
auxiliary electrode
pixel separation
display panel
Prior art date
Application number
PCT/CN2019/077360
Other languages
English (en)
French (fr)
Inventor
郝鹏
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020151057A1 publication Critical patent/WO2020151057A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details

Definitions

  • This application relates to the field of display technology, in particular to a display panel, a manufacturing method thereof, and a display device.
  • OLED Organic electroluminescent devices
  • the products on the market focus on bottom-emitting structures, and the cathode uses a thicker metal layer.
  • the bottom-emitting OLED will be limited by the aperture ratio, making it difficult to achieve high resolution. Therefore, more and more practitioners are turning their energies to the development of top-emitting OLEDs in hopes of achieving higher resolution.
  • the cathode of the top-emitting OLED uses transparent metal to realize the connection with the edge circuit of the screen. Due to the need to ensure the transmittance, the thickness of the transparent cathode is relatively thin, resulting in poor conductivity of the cathode.
  • the screen size is large, because the center area of the screen is far from the electrode interface, the long-distance current transmission will increase the cathode partial pressure, resulting in a difference in the number of carriers injected into the OLED element at the edge of the screen and the center of the screen.
  • There is an IR drop (pressure drop) problem which will cause the center of the screen to darken on the one hand, and increase energy consumption on the other hand.
  • the purpose of this application is to provide a display panel, a method of manufacturing the same, and a display device to reduce the resistance of the cathode, increase the conductivity of the cathode, and reduce the organic light-emitting devices at the edge of the display panel and the organic light-emitting devices at the center of the display panel The driving voltage gap between.
  • the embodiments of the present application provide a display panel, which includes a substrate, and a pixel separation layer and an organic light-emitting device sequentially arranged on the substrate; wherein the pixel separation layer includes a separator and a plurality of spacers. The adjacent opening areas are separated by a separator.
  • the organic light emitting device includes a cathode and an auxiliary electrode, the cathode covers the pixel separation layer, and the auxiliary electrode is arranged on the cathode and above the separator.
  • the cathode is formed by coating the entire surface, and the auxiliary electrodes are symmetrically distributed about the geometric center of the cathode.
  • the distribution density of the auxiliary electrode increases as the distance between the auxiliary electrode and the geometric center decreases.
  • the pattern of the auxiliary electrode is in a bar shape, a zigzag shape or a grid shape.
  • the organic light emitting device further includes an anode, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer that are sequentially away from the substrate, wherein the anode, the hole injection layer, the hole transport layer, and the light emitting layer are located in the opening.
  • the electron transport layer covers the pixel separation layer.
  • the display panel further includes a thin film transistor and a flat layer sequentially arranged on the substrate, wherein the flat layer covers the thin film transistor, and the pixel separation layer covers the flat layer.
  • the ratio of the thickness of the auxiliary electrode to the thickness of the cathode is in the range of 50-100.
  • an embodiment of the present application also provides a manufacturing method of a display panel.
  • the manufacturing method includes: providing a substrate; forming a pixel separation layer on the substrate.
  • the pixel separation layer includes a separator and a plurality of spaced open regions. , Adjacent opening areas are separated by a separator; an organic light-emitting device is formed on the pixel separation layer, wherein the organic light-emitting device includes a cathode and an auxiliary electrode, the cathode covers the pixel separation layer, and the auxiliary electrode is formed on the cathode and is located in the separator Above.
  • the step of forming a cathode and an auxiliary electrode on the pixel separation layer specifically includes: forming a cathode on the pixel separation layer by coating the entire surface; forming an auxiliary electrode on the cathode, and the auxiliary electrode is symmetrically distributed about the geometric center of the cathode.
  • the distribution density of the auxiliary electrode increases as the distance between the auxiliary electrode and the geometric center decreases.
  • the pattern of the auxiliary electrode is in a bar shape, a zigzag shape or a grid shape.
  • the ratio of the thickness of the auxiliary electrode to the thickness of the cathode is in the range of 50-100.
  • the step of forming an organic light emitting device on the pixel separation layer specifically includes: sequentially forming an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, a cathode, and an auxiliary electrode on the pixel separation layer, wherein The anode, the hole injection layer, the hole transport layer, and the light-emitting layer are located in the opening area, the electron transport layer covers the pixel separation layer, and the cathode covers the electron transport layer.
  • the method further includes: forming a thin film transistor on the substrate; forming a flat layer on the thin film transistor, the flat layer covers the thin film transistor, and the pixel separation layer covers the flat layer.
  • an embodiment of the present application provides a display device.
  • the display device includes a driving circuit and a display panel.
  • the driving circuit is used to provide a driving voltage to the display panel.
  • the display panel includes a substrate and a display panel on the substrate.
  • the pixel separation layer and the organic light-emitting device are arranged in sequence; wherein the pixel separation layer includes a separator and a plurality of spaced open areas, and adjacent open areas are separated by the separator.
  • the organic light-emitting device includes a cathode and an auxiliary electrode, and the cathode covers The pixel separation layer, the auxiliary electrode is arranged on the cathode and above the separator.
  • the cathode is formed by coating the entire surface, and the auxiliary electrodes are symmetrically distributed about the geometric center of the cathode.
  • the distribution density of the auxiliary electrode increases as the distance between the auxiliary electrode and the geometric center decreases.
  • the pattern of the auxiliary electrode is in a bar shape, a zigzag shape or a grid shape.
  • the organic light emitting device further includes an anode, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer that are sequentially away from the substrate, wherein the anode, the hole injection layer, the hole transport layer, and the light emitting layer are located in the opening.
  • the electron transport layer covers the pixel separation layer.
  • the display panel further includes a thin film transistor and a flat layer sequentially arranged on the substrate, wherein the flat layer covers the thin film transistor, and the pixel separation layer covers the flat layer.
  • the beneficial effect of the present application is that, different from the prior art, the display panel provided by the present application can reduce the resistance of the cathode and increase the conductivity of the cathode by arranging the auxiliary electrode at the position corresponding to the separator on the cathode, thereby reducing the size of the display panel.
  • FIG. 1 is a schematic top view of the structure of a display panel provided by an embodiment of the present application
  • Fig. 2 is a schematic cross-sectional structural diagram taken along the line A-A' in Fig. 1;
  • FIG. 3 is another schematic diagram of the structure of the display panel provided by the embodiment of the present application.
  • FIG. 4 is a schematic top view of the structure of the display panel in FIG. 3;
  • FIG. 5 is another schematic top view of the structure of the display panel in FIG. 3;
  • FIG. 6 is another schematic top view of the structure of the display panel in FIG. 3;
  • FIG. 7 is a schematic flowchart of a manufacturing method of a display panel provided by an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a display device provided by an embodiment of the present application.
  • an auxiliary electrode is arranged at the position corresponding to the separator on the cathode, which can reduce the resistance of the cathode and increase the conductivity of the cathode. Narrow the driving voltage gap between the organic light emitting device at the edge of the display panel and the organic light emitting device at the center of the display panel.
  • FIG. 1 is a schematic top view of a display panel provided by an embodiment of the present application
  • FIG. 2 is a schematic cross-sectional view taken along the line A-A' in FIG.
  • the display panel 10 includes a substrate 11, and a pixel separation layer 12 and an organic light-emitting device 13 sequentially disposed on the substrate 11.
  • the pixel separation layer 12 includes a separator 121 and a plurality of spaced opening regions 122.
  • the adjacent opening regions 122 are separated by the separator 121.
  • the organic light emitting device 13 includes a cathode 131 and an auxiliary electrode 132.
  • the cathode 131 covers the pixel separation.
  • the auxiliary electrode 132 is disposed on the cathode 131 and above the separator 121.
  • the display panel in this embodiment can reduce the resistance of the cathode and increase the conductivity of the cathode by arranging the auxiliary electrode at the position corresponding to the separator on the cathode, thereby reducing the organic light-emitting devices located at the edge of the display panel. And the driving voltage gap between the organic light emitting device located in the center of the display panel.
  • FIG. 3 is another schematic diagram of the structure of the display panel provided by the embodiment of the present application.
  • the display panel 20 includes a substrate 21, and a pixel separation layer 22 and an organic light-emitting device 23 sequentially disposed on the substrate 21.
  • the pixel separation layer 22 includes a partition 221 and a plurality of spaced opening regions 222.
  • the adjacent opening regions 222 are separated by the partition 221.
  • the organic light emitting device 23 includes a cathode 231 and an auxiliary electrode 232.
  • the cathode 231 covers the pixel partition.
  • the auxiliary electrode 232 is disposed on the cathode 231 and above the separator 221.
  • the substrate 21 may be a glass substrate or a rigid resin substrate, and may also be a flexible substrate for preparing a flexible display panel.
  • the pixel separation layer 22 can be made of organic insulating materials such as polyimide and epoxy resin, or inorganic insulating materials such as SiNx, SiOx, etc., and the spacers 221 of the pixel separation layer 22 define a plurality of spaces on the substrate 21
  • the opening area 222 is used for arranging the organic light emitting device 23.
  • the cathode 231 of the organic light emitting device 23 is formed by coating the entire surface, and the cathode 231 covers the separator 221 and the opening area 222.
  • an auxiliary electrode 232 is provided at a position corresponding to the separator 221 on the cathode 231, that is, the cathode 231 is located between the auxiliary electrode 232 and the separator 221.
  • the materials of the cathode 231 and the auxiliary electrode 232 may be the same or different.
  • the cathode 231 and the auxiliary electrode 232 are made of the same material.
  • the material can be transparent metal materials such as aluminum, silver, magnesium-silver alloy, etc.
  • the material of the cathode 231 is a transparent metal material, and the material of the auxiliary electrode 232 is different from that of the cathode 231.
  • the auxiliary electrode 232 can be other materials whose Fermi energy level matches that of the cathode 231 to ensure that the auxiliary electrode 232 is disposed on the cathode 231.
  • the resistance of the cathode 231 can be reduced.
  • the width of the auxiliary electrode 232 is not greater than the width of the separator 221 so that the auxiliary electrode 232 does not cover the opening area 222 to avoid the influence of the auxiliary electrode 232 on the transmittance of the display panel 20.
  • the thicker the thickness of the auxiliary electrode 232 the better the effect of the auxiliary electrode 232 in reducing the resistance of the cathode 231.
  • the thickness of the auxiliary electrode 232 may be 400-500 nm, and the thickness of the cathode 231 may be 10 nm.
  • the thickness of the auxiliary electrode 232 may also be 1 ⁇ m or greater, that is, the ratio of the thickness of the auxiliary electrode to the thickness of the cathode may be in the range of 50-100.
  • the auxiliary electrode 232 is disposed on the cathode 231 and distributed symmetrically with respect to the center position of the cathode 231, where the center position may be the entire cathode 231 The geometric center position.
  • the distribution density of the auxiliary electrode 232 on the cathode 231 can increase as the distance between the auxiliary electrode 232 and the center of the cathode decreases, thereby The driving voltage gap between the organic light emitting device located at the edge of the display panel and the organic light emitting device located at the center of the display panel can be more effectively reduced.
  • the pattern of the auxiliary electrode 232 may be a bar shape, a grid shape or a zigzag shape.
  • the organic light emitting device 23 further includes an anode 233, a hole injection layer 234, a hole transport layer 235, a light emitting layer 236, and an electron transport layer 237 that are sequentially away from the substrate 21, wherein the anodes 233, The hole injection layer 234, the hole transport layer 235, and the light emitting layer 236 are located in the opening area 222, and the electron transport layer 237 covers the pixel separation layer 22.
  • the display panel 20 may also include a thin film transistor (not shown in the figure) and a flat layer (not shown in the figure) sequentially arranged on the substrate 21, wherein the flat layer covers the thin film transistor, and the pixel separation layer 22 covers the flat layer.
  • a thin film transistor not shown in the figure
  • a flat layer not shown in the figure
  • the display panel in this embodiment can reduce the resistance of the cathode and increase the conductivity of the cathode by arranging the auxiliary electrode at the position corresponding to the separator on the cathode, thereby reducing the organic light-emitting devices located at the edge of the display panel. And the driving voltage gap between the organic light emitting device located in the center of the display panel.
  • FIG. 7 is a schematic flowchart of a manufacturing method of a display panel provided by an embodiment of the present application.
  • the manufacturing method of the display panel includes the following steps:
  • the substrate may be a glass substrate or a rigid resin substrate, and may also be a flexible substrate used to prepare a flexible display panel.
  • a pixel separation layer is formed on the substrate.
  • the pixel separation layer includes a spacer and a plurality of spaced opening regions, and adjacent opening regions are separated by the spacer.
  • the pixel separation layer is formed on the substrate through processes such as deposition, exposure, and etching.
  • the pixel separation layer can be made of organic insulating materials such as polyimide, epoxy resin, etc., or inorganic insulating materials such as SiNx, SiOx, etc., and the spacer of the pixel separation layer defines a plurality of spaced openings on the substrate. The open area is used to define the formation position of the organic light emitting device.
  • S73 forming an organic light-emitting device on the pixel separation layer, where the organic light-emitting device includes a cathode and an auxiliary electrode, the cathode covers the pixel separation layer, and the auxiliary electrode is formed on the cathode and located above the separator.
  • S73 specifically includes:
  • S731 forming a cathode on the pixel separation layer, and the cathode covers the pixel separation layer.
  • a cathode is formed on the pixel separation layer by coating the entire surface, and the cathode covers the separator and the opening area.
  • the auxiliary electrode can be made at the position corresponding to the separator on the cathode by evaporation.
  • the materials of the cathode and the auxiliary electrode may be the same or different.
  • the cathode and the auxiliary electrode are made of the same material.
  • the material can be transparent metal materials such as aluminum, silver, magnesium-silver alloy, etc.
  • the material of the cathode is a transparent metal material, and the material of the auxiliary electrode is different from that of the cathode.
  • the auxiliary electrode can be other materials whose Fermi energy level matches that of the cathode, so as to ensure that the auxiliary electrode is arranged on the cathode to reduce the cathode resistance.
  • the higher the Fermi level matching degree between the material used in the auxiliary electrode and the material used in the cathode the better the effect of the auxiliary electrode in reducing the resistance of the cathode.
  • the width of the auxiliary electrode is not greater than the width of the separator, so that the auxiliary electrode does not cover the opening area, so as to avoid the influence of the auxiliary electrode on the transmittance of the display panel.
  • the thicker the auxiliary electrode the better the effect of the auxiliary electrode in reducing the resistance of the cathode.
  • the thickness of the auxiliary electrode is 400-500nm, and the thickness of the cathode is 10nm.
  • the auxiliary electrode The thickness of the electrode can also be 1 ⁇ m or more, that is, the ratio of the thickness of the auxiliary electrode to the thickness of the cathode can be in the range of 50-100.
  • the auxiliary electrode is arranged on the cathode and is distributed symmetrically with respect to the center position of the cathode, wherein the center position may be the geometric center position of the entire cathode.
  • the pattern of the auxiliary electrode may be in a bar shape, a grid shape or a zigzag shape.
  • the distribution density of the auxiliary electrode on the cathode can be increased as the distance between the auxiliary electrode and the center of the cathode decreases, which can be more effective
  • the driving voltage gap between the organic light emitting device at the edge of the display panel and the organic light emitting device at the center of the display panel is reduced.
  • S733 An anode is formed on the pixel separation layer, and the anode is located in the opening area.
  • S735 Form an electron transport layer on the light-emitting layer by evaporation, wherein the electron transport layer covers the pixel separation layer.
  • the manufacturing method of the display panel provided by the embodiments of the present application can reduce the resistance of the cathode and increase the conductivity of the cathode by arranging the auxiliary electrode at the position corresponding to the separator on the cathode.
  • FIG. 8 is a schematic structural diagram of a display device provided by an embodiment of the present application.
  • the display device 80 includes a driving circuit and the display panel 81 of any of the above embodiments, wherein the driving circuit is used to provide a driving voltage to the display panel 81.
  • the display panel 81 includes a substrate, and a pixel separation layer and an organic light-emitting device sequentially arranged on the substrate.
  • the pixel separation layer includes a spacer and a plurality of spaced opening regions. The adjacent opening regions are separated by the spacer.
  • the light emitting device includes a cathode and an auxiliary electrode, the cathode covers the pixel separation layer, and the auxiliary electrode is arranged on the cathode and located above the separator.
  • the display device in this embodiment can reduce the resistance of the cathode and increase the conductivity of the cathode by arranging the auxiliary electrode at the position corresponding to the separator on the cathode of the organic light-emitting device.
  • the driving voltage gap between the organic light-emitting device and the organic light-emitting device located in the center of the display panel.

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

本申请涉及一种显示面板及其制作方法、显示装置，该显示面板包括：基板，以及在基板上依次设置的像素分隔层和有机发光器件；其中，像素分隔层包括分隔体和多个间隔设置的开口区域，相邻开口区域由分隔体分隔开，有机发光器件包括阴极和辅助电极，阴极覆盖像素分隔层，辅助电极设置于阴极上，且位于分隔体上方。

Description

一种显示面板及其制作方法、显示装置 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板及其制作方法、显示装置。
 背景技术
有机电致发光器件（OLED）以其自发光、全固态、高对比等优点，成为近年来最具潜力的新型显示器件。在大尺寸OLED应用方向，面市产品集中在底发光结构，阴极采用较厚的金属层。但随着分辨率的增长，底发光OLED会受到开口率的限制，难以实现高分辨率。因此，越来越多的从业者将精力转向顶发光OLED的开发，以期望实现更高的分辨率。
目前，顶发光OLED的阴极使用透明金属，实现与屏幕边缘电路的连接。由于需要保证透过率，透明阴极的厚度较薄，导致阴极的导电能力差。在屏幕尺寸较大时，屏幕中心区域由于离电极接口较远，长距离的电流传输会使阴极分压增大，从而造成屏幕边缘和屏幕中心OLED元件中注入的载流子数目有差异，即有IR drop（压降）的问题，这样一方面会导致屏幕中心发暗，另一方面会增加能耗。
 技术问题
本申请的目的在于提供一种显示面板及其制作方法、显示装置，以减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
 技术解决方案
为了解决上述问题，本申请实施例提供了一种显示面板，该显示面板包括：基板，以及在基板上依次设置的像素分隔层和有机发光器件；其中，像素分隔层包括分隔体和多个间隔设置的开口区域，相邻开口区域由分隔体分隔开，有机发光器件包括阴极和辅助电极，阴极覆盖像素分隔层，辅助电极设置于阴极上，且位于分隔体上方。
进一步地，阴极是通过整面镀膜形成的，辅助电极关于阴极的几何中心对称分布。
进一步地，辅助电极的分布密度随辅助电极与几何中心之间距离的减小而增大。
进一步地，辅助电极的图案为条形、锯齿形或网格形。
进一步地，有机发光器件还包括依次远离基板的阳极、空穴注入层、空穴传输层、发光层和电子传输层，其中，阳极、空穴注入层、空穴传输层、以及发光层位于开口区域内，电子传输层覆盖像素分隔层。
进一步地，显示面板还包括在基板上依次设置的薄膜晶体管和平坦层，其中，平坦层覆盖薄膜晶体管，像素分隔层覆盖平坦层。
进一步地，辅助电极的厚度与阴极的厚度的比值范围为50~100。
为了解决上述问题，本申请实施例还提供了一种显示面板的制作方法，该制作方法包括：提供基板；在基板上形成像素分隔层，像素分隔层包括分隔体和多个间隔设置的开口区域，相邻开口区域由分隔体分隔开；在像素分隔层上形成有机发光器件，其中，有机发光器件包括阴极和辅助电极，阴极覆盖像素分隔层，辅助电极形成于阴极上，且位于分隔体上方。
进一步地，在像素分隔层上形成阴极和辅助电极的步骤，具体包括：在像素分隔层上，通过整面镀膜形成阴极；在阴极上形成辅助电极，辅助电极关于阴极的几何中心对称分布。
进一步地，辅助电极的分布密度随辅助电极与几何中心之间距离的减小而增大。
进一步地，辅助电极的图案为条形、锯齿形或网格形。
进一步地，辅助电极的厚度与阴极的厚度的比值范围为50~100。
进一步地，在像素分隔层上形成有机发光器件的步骤，具体包括：在像素分隔层上依次形成阳极、空穴注入层、空穴传输层、发光层、电子传输层、阴极和辅助电极，其中，阳极、空穴注入层、空穴传输层、以及发光层位于开口区域内，电子传输层覆盖像素分隔层，阴极覆盖电子传输层。
进一步地，在基板上形成像素分隔层的步骤之前，还包括：在基板上形成薄膜晶体管；在薄膜晶体管上形成平坦层，平坦层覆盖薄膜晶体管，像素分隔层覆盖平坦层。
为了解决上述问题，本申请实施例又提供了一种显示装置，该显示装置包括驱动电路和显示面板，驱动电路用于向显示面板提供驱动电压，其中，显示面板包括：基板，以及在基板上依次设置的像素分隔层和有机发光器件；其中，像素分隔层包括分隔体和多个间隔设置的开口区域，相邻开口区域由分隔体分隔开，有机发光器件包括阴极和辅助电极，阴极覆盖像素分隔层，辅助电极设置于阴极上，且位于分隔体上方。
进一步地，阴极是通过整面镀膜形成的，辅助电极关于阴极的几何中心对称分布。
进一步地，辅助电极的分布密度随辅助电极与几何中心之间距离的减小而增大。
进一步地，辅助电极的图案为条形、锯齿形或网格形。
进一步地，有机发光器件还包括依次远离基板的阳极、空穴注入层、空穴传输层、发光层和电子传输层，其中，阳极、空穴注入层、空穴传输层、以及发光层位于开口区域内，电子传输层覆盖像素分隔层。
进一步地，显示面板还包括在基板上依次设置的薄膜晶体管和平坦层，其中，平坦层覆盖薄膜晶体管，像素分隔层覆盖平坦层。
 有益效果
本申请的有益效果是：区别于现有技术，本申请提供的显示面板，通过在阴极上分隔体对应的位置设置辅助电极，能够减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的显示面板的俯视结构示意图；
图2是沿图1中的线A-A’截取的横截面结构示意图；
图3是本申请实施例提供的显示面板的另一结构示意图；
图4是图3中显示面板的俯视结构示意图；
图5是图3中显示面板的另一俯视结构示意图；
图6是图3中显示面板的又一俯视结构示意图；
图7是本申请实施例提供的显示面板的制作方法的流程示意图；
图8是本申请实施例提供的显示装置的结构示意图。
 本发明的实施方式
下面结合附图和实施例，对本申请作进一步的详细描述。特别指出的是，以下实施例仅用于说明本申请，但不对本申请的范围进行限定。同样的，以下实施例仅为本申请的部分实施例而非全部实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本申请保护的范围。
为了解决由于阴极的导电性能差而导致屏幕边缘和屏幕中心有机发光器件存在压降的问题，在阴极上分隔体对应的位置设置辅助电极，能够减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
请参阅图1和图2，图1是本申请实施例提供的显示面板的俯视结构示意图，图2是沿图1中的线A-A’截取的横截面结构示意图。该显示面板10包括基板11、以及在基板11上依次设置的像素分隔层12和有机发光器件13。其中，像素分隔层12包括分隔体121和多个间隔设置的开口区域122，相邻开口区域122由分隔体121分隔开，有机发光器件13包括阴极131和辅助电极132，阴极131覆盖像素分隔层12，辅助电极132设置于阴极131上，且位于分隔体121上方。
区别于现有技术，本实施例中的显示面板，通过在阴极上分隔体对应的位置设置辅助电极，能够减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
请参阅图3，图3是本申请实施例提供的显示面板的另一结构示意图。该显示面板20包括基板21、以及在基板21上依次设置的像素分隔层22和有机发光器件23。其中，像素分隔层22包括分隔体221和多个间隔设置的开口区域222，相邻开口区域222由分隔体221分隔开，有机发光器件23包括阴极231和辅助电极232，阴极231覆盖像素分隔层22，辅助电极232设置于阴极231上，且位于分隔体221上方。
在本实施例中，基板21可以为玻璃基板或者硬质的树脂基板，也可以为用于制备柔性显示面板的柔性基板。像素分隔层22可以为聚酰亚胺、环氧树脂等有机绝缘材质，也可以为SiNx、SiOx等无机绝缘材质，并且，像素分隔层22的分隔体221在基板21上界定出多个间隔设置的开口区域222，开口区域222用于设置有机发光器件23。
其中，有机发光器件23的阴极231是通过整面镀膜形成的，阴极231覆盖分隔体221和开口区域222。并且，在阴极231上分隔体221对应的位置设置有辅助电极232，即阴极231位于辅助电极232和分隔体221之间。
在本实施例中，阴极231和辅助电极232的材质可以相同也可以不相同。例如，阴极231和辅助电极232的材质相同，为保证显示面板20的光线透过率，其材质可以为铝、银、镁银合金等透明金属材料。又例如，阴极231的材质为透明金属材料，而辅助电极232的材料与阴极231不同，辅助电极232可以为费米能级与阴极231相匹配的其他材料，以保证辅助电极232设置在阴极231上后能够减小阴极231的电阻。其中，辅助电极232使用的材料与阴极231使用的材料之间费米能级的匹配度越高，辅助电极232降低阴极231电阻的效果越好。
进一步地，辅助电极232的宽度不大于分隔体221的宽度，使得辅助电极232不覆盖开口区域222，以避免辅助电极232对显示面板20透过率的影响。另外，辅助电极232的厚度越厚，辅助电极232减小阴极231电阻的效果越好，例如，在一个实施例中，辅助电极232的厚度可以为400-500nm，阴极231的厚度可以为10nm，在其他实施例中，辅助电极232的厚度还可以为1μm或更大，即辅助电极的厚度与阴极的厚度的比值范围可以为50~100。
可选地，为了避免辅助电极232对显示面板20显示均匀性的影响，辅助电极232设置于阴极231上，并且关于阴极231的中心位置对称分布，其中，所述中心位置可以为整面阴极231的几何中心位置。
进一步地，考虑到靠近阴极中心位置的有机发光器件的驱动电压降低比较显著，辅助电极232在阴极231上的分布密度可以随辅助电极232与阴极中心位置之间距离的减小而增大，从而能够更加有效地缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
其中，请参阅图4至图6，辅助电极232的图案可以为条形、网格形或锯齿形。
可选地，请继续参阅图3，有机发光器件23还包括依次远离基板21的阳极233、空穴注入层234、空穴传输层235、发光层236和电子传输层237，其中，阳极233、空穴注入层234、空穴传输层235、以及发光层236位于开口区域222内，电子传输层237覆盖像素分隔层22。
进一步地，显示面板20还可以包括在基板21上依次设置的薄膜晶体管（图中未示出）和平坦层（图中未示出），其中，平坦层覆盖薄膜晶体管，像素分隔层22覆盖平坦层。
区别于现有技术，本实施例中的显示面板，通过在阴极上分隔体对应的位置设置辅助电极，能够减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
请参阅图7，图7是本申请实施例提供的显示面板的制作方法的流程示意图。该显示面板的制作方法包括以下步骤：
S71：提供基板。
基板可以为玻璃基板或者硬质的树脂基板，也可以为用于制备柔性显示面板的柔性基板。
S72：在基板上形成像素分隔层，像素分隔层包括分隔体和多个间隔设置的开口区域，相邻开口区域由分隔体分隔开。
例如，通过沉积、曝光、蚀刻等工艺在基板上形成像素分隔层。其中，像素分隔层可以为聚酰亚胺、环氧树脂等有机绝缘材质，也可以为SiNx、SiOx等无机绝缘材质，并且，像素分隔层的分隔体在基板上界定出多个间隔设置的开口区域，开口区域用于界定有机发光器件的形成位置。
S73：在像素分隔层上形成有机发光器件，其中，有机发光器件包括阴极和辅助电极，阴极覆盖像素分隔层，辅助电极形成于阴极上，且位于分隔体上方。
在本实施例中，S73具体包括：
S731：在像素分隔层上形成阴极，阴极覆盖像素分隔层。
具体地，在像素分隔层上通过整面镀膜的方式形成阴极，阴极覆盖分隔体和开口区域。
S732：在阴极上形成辅助电极，且辅助电极位于分隔体上方。
具体地，可以通过蒸镀的方式在阴极上分隔体对应的位置制作辅助电极。
其中，阴极和辅助电极的材质可以相同也可以不相同。例如，阴极和辅助电极的材质相同，为保证显示面板的光线透过率，其材质可以为铝、银、镁银合金等透明金属材料。又例如，阴极的材质为透明金属材料，而辅助电极的材料与阴极不同，辅助电极可以为费米能级与阴极相匹配的其他材料，以保证辅助电极设置在阴极上后能够减小阴极的电阻。其中，辅助电极使用的材料与阴极使用的材料之间费米能级的匹配度越高，辅助电极降低阴极电阻的效果越好。
进一步地，辅助电极的宽度不大于分隔体的宽度，使得辅助电极不覆盖开口区域，以避免辅助电极对显示面板透过率的影响。另外，辅助电极的厚度越厚，辅助电极减小阴极电阻的效果越好，例如，在一个实施例中，辅助电极的厚度为400-500nm，阴极的厚度为10nm，在其他实施例中，辅助电极的厚度还可以为1μm或更大，即辅助电极的厚度与阴极的厚度的比值范围可以为50~100。
可选地，为了避免辅助电极对显示面板显示均匀性的影响，辅助电极设置于阴极上，并且关于阴极的中心位置对称分布，其中，所述中心位置可以为整面阴极的几何中心位置。其中，辅助电极的图案可以为条形、网格形或锯齿形。
进一步地，考虑到靠近阴极中心位置的有机发光器件的驱动电压降低比较显著，辅助电极在阴极上的分布密度可以随辅助电极与阴极中心位置之间距离的减小而增大，从而能够更加有效地缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
可选地，在S731之前，还包括：
S733：在像素分隔层上形成阳极，阳极位于开口区域内。
S734：通过喷墨打印的方式，在阳极上依次形成空穴注入层、空穴传输层和发光层，其中，空穴注入层、空穴传输层和发光层位于开口区域内。
S735：通过蒸镀的方式，在发光层上形成电子传输层，其中，电子传输层覆盖像素分隔层。
可选地，S72之前，还包括：
S74：在基板上形成薄膜晶体管；
S75：在薄膜晶体管上形成平坦层，平坦层覆盖薄膜晶体管，像素分隔层覆盖平坦层。
区别于现有技术，本申请实施例提供的显示面板的制作方法，通过在阴极上分隔体对应的位置设置辅助电极，能够减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
请参阅图8，图8是本申请实施例提供的显示装置的结构示意图。该显示装置80包括驱动电路和上述任一实施例的显示面板81，其中，驱动电路用于向显示面板81提供驱动电压。
显示面板81包括基板、以及在基板上依次设置的像素分隔层和有机发光器件，其中，像素分隔层包括分隔体和多个间隔设置的开口区域，相邻开口区域由分隔体分隔开，有机发光器件包括阴极和辅助电极，阴极覆盖像素分隔层，辅助电极设置于阴极上，且位于分隔体上方。
区别于现有技术，本实施例中的显示装置，通过在有机发光器件的阴极上分隔体对应的位置设置辅助电极，能够减小阴极的电阻，提高阴极的导电率，进而缩小位于显示面板边缘的有机发光器件和位于显示面板中心的有机发光器件之间的驱动电压差距。
以上所述仅为本申请的较佳实施例而已，并不用以限制本申请，凡在本申请的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本申请的保护范围之内。

Claims (20)

  1. 一种显示面板，其中，所述显示面板包括：
    基板，以及在所述基板上依次设置的像素分隔层和有机发光器件；其中，所述像素分隔层包括分隔体和多个间隔设置的开口区域，相邻所述开口区域由所述分隔体分隔开，所述有机发光器件包括阴极和辅助电极，所述阴极覆盖所述像素分隔层，所述辅助电极设置于所述阴极上，且位于所述分隔体上方。
  2. 根据权利要求1所述的显示面板，其中，所述阴极是通过整面镀膜形成的，所述辅助电极关于所述阴极的几何中心对称分布。
  3. 根据权利要求2所述的显示面板，其中，所述辅助电极的分布密度随所述辅助电极与所述几何中心之间距离的减小而增大。
  4. 根据权利要求1所述的显示面板，其中，所述辅助电极的图案为条形、网格形或锯齿形。
  5. 根据权利要求1所述的显示面板，其中，所述有机发光器件还包括依次远离所述基板的阳极、空穴注入层、空穴传输层、发光层和电子传输层，其中，所述阳极、所述空穴注入层、所述空穴传输层、以及所述发光层位于所述开口区域内，所述电子传输层覆盖所述像素分隔层。
  6. 根据权利要求1所述的显示面板，其中，所述显示面板还包括在所述基板上依次设置的薄膜晶体管和平坦层，其中，所述平坦层覆盖所述薄膜晶体管，所述像素分隔层覆盖所述平坦层。
  7. 根据权利要求1所述的显示面板，其中，所述辅助电极的厚度与所述阴极的厚度的比值范围为50~100。
  8. 一种显示面板的制作方法，其中，所述制作方法包括：
    提供基板；
    在所述基板上形成像素分隔层，所述像素分隔层包括分隔体和多个间隔设置的开口区域，相邻所述开口区域由所述分隔体分隔开；
    在所述像素分隔层上形成有机发光器件，其中，所述有机发光器件包括阴极和辅助电极，所述阴极覆盖所述像素分隔层，所述辅助电极形成于所述阴极上，且位于所述分隔体上方。
  9. 根据权利要求8所述的制作方法，其中，所述在所述像素分隔层上形成所述阴极和所述辅助电极的步骤，具体包括：
    在所述像素分隔层上，通过整面镀膜形成所述阴极；
    在所述阴极上形成所述辅助电极，所述辅助电极关于所述阴极的几何中心对称分布。
  10. 根据权利要求9所述的制作方法，其中，所述辅助电极的分布密度随所述辅助电极与所述几何中心之间距离的减小而增大。
  11. 根据权利要求8所述的制作方法，其中，所述辅助电极的图案为条形、网格形或锯齿形。
  12. 根据权利要求8所述的制作方法，其中，所述辅助电极的厚度与所述阴极的厚度的比值范围为50~100。
  13. 根据权利要求8所述的制作方法，其中，所述在所述像素分隔层上形成所述有机发光器件的步骤，具体包括：
    在所述像素分隔层上依次形成阳极、空穴注入层、空穴传输层、发光层、电子传输层、所述阴极和所述辅助电极，其中，所述阳极、所述空穴注入层、所述空穴传输层、以及所述发光层位于所述开口区域内，所述电子传输层覆盖所述像素分隔层，所述阴极覆盖所述电子传输层。
  14. 根据权利要求8所述的制作方法，其中，在所述基板上形成像素分隔层的步骤之前，还包括：
    在所述基板上形成薄膜晶体管；
    在所述薄膜晶体管上形成平坦层，所述平坦层覆盖所述薄膜晶体管，所述像素分隔层覆盖所述平坦层。
  15. 一种显示装置，其中，所述显示装置包括驱动电路和显示面板，所述驱动电路用于向所述显示面板提供驱动电压，
    其中，所述显示面板包括：基板，以及在所述基板上依次设置的像素分隔层和有机发光器件；其中，所述像素分隔层包括分隔体和多个间隔设置的开口区域，相邻所述开口区域由所述分隔体分隔开，所述有机发光器件包括阴极和辅助电极，所述阴极覆盖所述像素分隔层，所述辅助电极设置于所述阴极上，且位于所述分隔体上方。
  16. 根据权利要求15所述的显示装置，其中，所述阴极是通过整面镀膜形成的，所述辅助电极关于所述阴极的几何中心对称分布。
  17. 根据权利要求16所述的显示装置，其中，所述辅助电极的分布密度随所述辅助电极与所述几何中心之间距离的减小而增大。
  18. 根据权利要求15所述的显示装置，其中，所述辅助电极的图案为条形、网格形或锯齿形。
  19. 根据权利要求15所述的显示装置，其中，所述有机发光器件还包括依次远离所述基板的阳极、空穴注入层、空穴传输层、发光层和电子传输层，其中，所述阳极、所述空穴注入层、所述空穴传输层、以及所述发光层位于所述开口区域内，所述电子传输层覆盖所述像素分隔层。
  20. 根据权利要求15所述的显示装置，其中，所述显示面板还包括在所述基板上依次设置的薄膜晶体管和平坦层，其中，所述平坦层覆盖所述薄膜晶体管，所述像素分隔层覆盖所述平坦层。
PCT/CN2019/077360 2019-01-22 2019-03-07 一种显示面板及其制作方法、显示装置 WO2020151057A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910056621.4A CN109817825A (zh) 2019-01-22 2019-01-22 一种显示面板及其制作方法、显示装置
CN201910056621.4 2019-01-22

Publications (1)

Publication Number Publication Date
WO2020151057A1 true WO2020151057A1 (zh) 2020-07-30

Family

ID=66604768

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/077360 WO2020151057A1 (zh) 2019-01-22 2019-03-07 一种显示面板及其制作方法、显示装置

Country Status (2)

Country Link
CN (1) CN109817825A (zh)
WO (1) WO2020151057A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111276632B (zh) * 2020-02-19 2021-03-16 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
US11515365B2 (en) 2020-05-07 2022-11-29 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and display device
CN111583818B (zh) * 2020-05-07 2021-07-06 武汉华星光电半导体显示技术有限公司 一种显示面板和显示装置
CN111540844B (zh) * 2020-05-20 2023-05-23 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板
CN112310323A (zh) * 2020-10-30 2021-02-02 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531770A (zh) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN107359274A (zh) * 2017-06-27 2017-11-17 上海天马有机发光显示技术有限公司 显示面板、显示装置及显示面板的制作方法
CN108110038A (zh) * 2018-01-02 2018-06-01 上海天马微电子有限公司 有机发光显示面板和显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108933154B (zh) * 2017-05-26 2021-04-27 京东方科技集团股份有限公司 有机发光二极管显示基板的制备方法、显示基板及显示装置
CN107394052B (zh) * 2017-08-31 2024-01-09 京东方科技集团股份有限公司 一种有机发光二极管器件及其制备方法、显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531770A (zh) * 2016-12-23 2017-03-22 京东方科技集团股份有限公司 一种有机电致发光显示面板、其制作方法及显示装置
CN107359274A (zh) * 2017-06-27 2017-11-17 上海天马有机发光显示技术有限公司 显示面板、显示装置及显示面板的制作方法
CN108110038A (zh) * 2018-01-02 2018-06-01 上海天马微电子有限公司 有机发光显示面板和显示装置

Also Published As

Publication number Publication date
CN109817825A (zh) 2019-05-28

Similar Documents

Publication Publication Date Title
US10784471B2 (en) Organic light emitting display device and method of making the same
WO2020151057A1 (zh) 一种显示面板及其制作方法、显示装置
US11114514B2 (en) Organic electroluminescent display panel, manufacturing method thereof, and display device
CN110120463B (zh) 显示基板及其制备方法、显示装置
US9722005B2 (en) Light-emitting device, array substrate, display device and manufacturing method of light-emitting device
CN109360900B (zh) 一种显示面板及其制作方法
US8701592B2 (en) Mask frame assembly, method of manufacturing the same, and method of manufacturing organic light-emitting display device using the mask frame assembly
WO2020047978A1 (zh) 显示面板及其制作方法
TWI674689B (zh) 顯示裝置及其製造方法
US20180033964A1 (en) Recess structure for print deposition process and manufacturing method thereof
WO2016176886A1 (zh) 柔性oled及其制作方法
WO2021233070A1 (zh) 显示基板及其制作方法、显示面板及显示装置
WO2018120362A1 (zh) Oled基板及其制作方法
CN106856203B (zh) 一种顶发射显示发光器件及其制备方法
US8174008B1 (en) Light emitting device and method for manufacturing the same
CN107978691B (zh) 有机发光显示面板、显示装置及显示面板的制作方法
CN110634933B (zh) 一种oled显示面板、显示装置及制备方法
WO2020224010A1 (zh) Oled 显示面板及其制备方法
WO2020220400A1 (zh) 一种显示面板及其制作方法、以及显示装置
WO2019041578A1 (zh) Oled基板及其制作方法
JP2017092213A (ja) 有機電界発光素子、表示装置および有機電界発光素子の製造方法
CN113097259B (zh) 一种显示面板、显示面板制程方法及显示装置
WO2020206718A1 (zh) 一种有机发光二极管显示器及其制作方法
WO2020172962A1 (zh) 一种显示面板及其制作方法、显示装置
CN114420859B (zh) 一种显示基板、显示装置及显示基板的制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19911647

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19911647

Country of ref document: EP

Kind code of ref document: A1