WO2020143045A1 - ***式谐振器 - Google Patents
***式谐振器 Download PDFInfo
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- WO2020143045A1 WO2020143045A1 PCT/CN2019/071430 CN2019071430W WO2020143045A1 WO 2020143045 A1 WO2020143045 A1 WO 2020143045A1 CN 2019071430 W CN2019071430 W CN 2019071430W WO 2020143045 A1 WO2020143045 A1 WO 2020143045A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- the invention relates to a resonator, in particular to a split resonator.
- Thin film bulk wave resonators made by longitudinal resonance of piezoelectric films in the thickness direction have become a viable alternative to surface acoustic wave devices and quartz crystal resonators in mobile phone communications and high-speed serial data applications.
- the RF front-end bulk wave filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, and strong anti-static discharge (ESD) capability.
- ESD anti-static discharge
- the high temperature caused by high heat will cause the device Q value and electromechanical coupling coefficient to decrease greatly; in addition, the high temperature will cause the frequency of the resonator to drift; in addition, the high temperature will also reduce the overall life of the device.
- the above problems ultimately lead to serious deterioration of the performance parameters of the filter composed of resonators such as bandwidth, insertion loss, roll-off characteristics, and out-of-band suppression.
- the traditional way to deal with the problem of heating is to increase the area of the resonator.
- This method can effectively reduce the power density in the resonator within a certain power range, thereby reducing the operating temperature of the resonator.
- relying solely on the method of increasing the area can no longer meet the current power requirements of the resonator, and further improvement of the traditional structure is needed.
- the object of the present invention is to provide a split resonator, which not only increases the perimeter area ratio of the thin film bulk acoustic resonator, thereby improving the heat dissipation performance of the resonator and the overall power capacity of the electronic device; but also can improve the rational layout of the resonator It effectively suppresses high-order harmonics and improves the stability of the circuit.
- the present invention provides the following technical solutions:
- a split resonator is a resonator group composed of multiple sub-resonators connected in parallel, the shape of the sub-resonators is polygon; the split resonator has 2 pins, the The two pins occupy the first potential and the second potential, respectively.
- each of the sub-resonators has the first potential on one side and the second potential on the other side. That is, each split resonator contains only two sets of equipotential connections.
- the C axis of the piezoelectric layer of each of the sub-resonators is directed from the first potential to the second potential, or from the second potential to the first potential.
- the piezoelectric layers of all sub-resonators in the split resonator may have the same C-axis orientation.
- the C-axis of the piezoelectric layer of at least one sub-resonator is opposite to the C-axis of the piezoelectric layer of at least one of the remaining sub-resonators. That is to say, not all the sub-resonator piezoelectric layer C-axis directions are all the same.
- the C-axis directions of the piezoelectric layers of all sub-resonators are not all the same, optionally, there are more than two of the sub-resonators spatially arranged as axisymmetric, and/or more than three of the sub-resonators
- the spatial arrangement of the resonators is center-symmetric, and the symmetry of the sub-resonator arrangement at this time helps to suppress and cancel higher harmonics in the circuit and improve circuit stability.
- each sub-resonator of the plurality of sub-resonators maintains acoustic isolation. At least one place between the upper electrode-upper electrode, the lower electrode-lower electrode, and the piezoelectric layer-piezoelectric layer of two adjacent sub-resonators is not connected, the two sub-resonators maintain acoustic isolation. For example, when there is an electrical connection between the upper electrode-upper electrode and the lower electrode-lower electrode, the piezoelectric layer-piezoelectric layer should be disconnected.
- the gap width of the upper electrode or the lower electrode or the piezoelectric layer of two adjacent sub-resonators is not less than half an acoustic wave wavelength, or not less than 2 acoustic wave wavelengths.
- the split resonator is provided with 2 sets of equipotential interconnection, wherein the first set of equipotential interconnection is composed of the electrodes of the sub-resonator at the first potential and the electrical connections between these electrodes, the second set, etc.
- the potential interconnection is composed of the electrodes of the sub-resonator at the second potential and the electrical connections between these electrodes.
- the structure of the equipotential interconnection is serial and/or branched.
- the upper electrode and the lower electrode are made of metal, a metal multilayer composite material or alloy.
- the metal includes at least one of the following: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, chromium, iridium, osmium, platinum, gallium, germanium.
- the piezoelectric layer material includes aluminum nitride, zinc oxide, lead titanium zirconate, lithium niobate, and the above-mentioned materials doped with a certain proportion of rare earth elements.
- the beneficial effect of the present invention is that the present invention splits a traditional single resonator in an electronic device into a polygon resonator group composed of several polygon sub-resonators.
- This structure can increase the perimeter area ratio of the resonator, thereby improving the resonator Heat dissipation performance and overall power capacity of electronic devices.
- another advantage of the split resonator is to help make the resonator layout more compact, so as to rationally use space and reduce device size.
- Figure 1 is a split connection layout of the present invention
- 11A and 11B are respectively a top view and a cross-sectional view of a split resonator according to an embodiment of the present invention.
- This embodiment provides a split pentagonal resonator, as shown in FIG. 1, which shows the splitting method of the resonator and the connection method of the equipotential electrode: the upper electrode of the resonator R401 has a pin C400 C401-C405 are electrically connected, and the upper electrodes (solid lines) of the sub-resonators R401, R402, R403, R404, R405, and R406 are serially connected in the order shown by the arrows in the figure.
- the above serial connection method is only an example, and other serial sequences can also be used.
- the lower electrode (dotted line part) can be connected in the same way, or other prescribed ways can be used to traverse the equipotential electrodes connected to each sub-resonator one by one.
- serial connection does not refer to the series connection in series and parallel, but refers to the connection sequence of the same set of equipotential electrodes of each sub-resonator, that is, for example, as shown in Figs. , 7, 8, each sub-resonator is only connected to one other sub-resonator, which is different from the radial type connection, that is, it is different from R606 in FIG. 2, R701, R706 in FIG. 3 and so on.
- the electrical connection between the sub-resonators is in the form of parallel connection.
- the upper electrode and the lower electrode of the two are interconnected.
- Each drawing can be understood as a top view, because the above-mentioned parallel state is not shown.
- the “upper electrode” involved in the embodiments is only one possible combination of equipotential electrodes, and the electrode combination of equipotential connection can still have other ways (this principle applies to all embodiments in the present invention)
- a certain electrical connection may be changed to connect the upper electrode of a certain sub-resonator (such as R401) and the lower electrode of another sub-resonator (such as R402), and so on.
- the gap width of the upper electrode or the lower electrode or the piezoelectric layer of the two adjacent sub-resonators is set to not less than half of the sound wave wavelength, preferably not less than 2 sound waves wavelength.
- the above-mentioned upper electrode and the lower electrode may be made of a multi-layer composite material of platinum or gallium material; there is at most only an electrical connection between each two adjacent resonators, while maintaining acoustic isolation.
- the upper electrode of the resonator R601 has a pin C600, first the upper electrode of R601 (Solid line part) is connected to the upper electrode of R606 (solid line part) through C601, and then the upper electrode of R606 is radially connected to the upper electrode (solid line part) of R602-R605 through C602-C605.
- the above radial connection method is only an example, and other radial types may also be used.
- the lower electrode (dotted line) can be connected in the same way, or in other ways.
- an electrical connection may be changed to connect the upper electrode of a sub-resonator (such as R601) and the lower electrode of another sub-resonator (such as R606).
- the pentagonal resonator is split into two sub-resonators R101 and R102, the input electrode of the upper electrode of C100, wherein the two upper electrodes of the sub-resonator are electrically connected through the conductor C101.
- the lower electrodes of similar sub-resonators can also be electrically connected in this way.
- the upper electrode of R101 may be connected to the lower electrode of R102.
- the lower electrode of R101 may be connected to the upper electrode of R102.
- the sub-resonators R101 and R102 maintain acoustic isolation: That is, at least one of the electrode bodies or piezoelectric layers corresponding to the two resonators is not connected. And in order to ensure a good acoustic isolation state, the width of the gap between the electrodes or the piezoelectric layers of adjacent sub-resonators is ensured to be not less than half an acoustic wave wavelength, and the preferred range is not less than two acoustic wave wavelengths.
- a pentagonal resonator is split into 6 sub-resonators: R801, R802, R803, R804, R805, and R806. And through C801-C810, the upper electrode of each resonator is electrically connected, and a connection is established between each two equipotential electrodes of all sub-resonators, that is, each sub-resonator and all adjacent sub-resonators There is a connection.
- the upper electrode of a resonator (such as R801) can be connected to the lower electrode of the adjacent resonator (R802); the lower electrode of a resonator (such as R801) can also be connected to the phase The upper electrode of the adjacent resonator (R802), while ensuring acoustic isolation between adjacent sub-resonators.
- the pentagonal resonator is split into 6 sub-resonators R701-R706 and connected as shown in the figure, wherein, from R701, they are respectively connected to adjacent sub-radiators
- the resonator, and from R706, are connected to adjacent sub-resonators radially.
- the hexagonal resonator is split into 8 pentagonal sub-resonators R901-R908, the two sub-resonators located in the middle are axisymmetric, and the surrounding 6 sub-resonators are center-symmetrical, as shown in the figure Connect the upper electrode of the resonator.
- other splitting methods and traversing connection methods can be selected.
- the pentagonal resonator is split into sub-resonators R201-R203 and connected to its upper electrode by a single path traversal; or split into sub-resonators R301-R303 and connected respectively by the electrodes on R301 radially The upper electrodes of R302 and R303.
- the resonator splitting method of the present invention can also be expanded as described in FIG. 6, that is, the present invention can be used to split resonators of any shape during implementation, and the splitting trajectory can be TR1 in the above figure.
- the straight line shown can also be a polyline shown by TR2, an arc shown by TR3, or other mathematical or irregular curves shown by TR4; a combination of the above split trajectories can also be used, so the above
- the sides of the polygon may be straight lines and/or curved lines.
- the two sides at the boundary of the adjacent sub-resonators are preferably parallel, which helps reduce the area of the split resonator.
- the sub-resonators Rsub1-Rsub4 have upper electrodes EH1-EH4, lower electrodes EL1-EL4, and piezoelectric layers A1-A4 respectively; the piezoelectric layers of the four sub-resonators have C-axis directions C1-C4, respectively.
- the electrodes of the sub-resonator are equipotentially connected by conductors (solid lines F1, F2 and F3 and broken lines D1, D2 and D3).
- EH1-F1-EL2-F2-EH3-F3-EH4 forms one set of equipotential connections (here called A), and EL1-D1-EH2-D2-EL3-D3-EL4 forms another set of equipotential connections (called For B). If A occupies the first potential, then B occupies the second potential. When the equipotential connection is established, all the connected electrodes in A all have the first potential, and accordingly, all the connected electrodes in B have the second potential.
- the split resonator has two pins, and the two pins occupy the first potential and the second potential, respectively.
- Each sub-resonator has the above-mentioned first potential on one side and the above-mentioned second potential on the other side. That is, each split resonator contains only two sets of equipotential connections.
- the C axis of the piezoelectric layer of each sub-resonator is directed from the first potential to the second potential, or from the second potential to the first potential.
- the C-axis of the piezoelectric layer of at least one sub-resonator is opposite to the C-axis of the piezoelectric layer of at least one of the remaining sub-resonators.
- FIG. 11A and 11B are respectively a top view and a cross-sectional view of a split resonator according to an embodiment of the present invention.
- the resonator SR0 is split into six sub-resonators SR1-SR6. It can be seen that after the split, the total area of the sub-resonators does not change significantly compared to before the split, but the total circumference of the sub-resonators increases significantly from before the split.
- the dotted line in FIG. 1 is the split perimeter than before the split. The added part. Therefore, the ratio of the total circumference after splitting to the total area of the resonator also increases significantly.
- FIG. 11B a schematic cross-sectional view in FIG. 11B can be obtained.
- the heat generated during the operation of the resonator SR0 can only be dissipated into the substrate from the Q1 and Q2 sandwich structures of the resonator.
- the heat dissipation path increases significantly. At this time, heat is dissipated to the substrate not only through Q1 and Q2, but also through the Q3-Q6 path. Therefore, the above split structure improves the power capacity of the resonator by improving the heat dissipation efficiency of the resonator.
- the gap between the electrodes or the piezoelectric layers of the adjacent sub-resonators after splitting is not less than half an acoustic wave wavelength, and the preferred range is not less than two acoustic wave wavelengths.
- the materials of the upper electrode and the lower electrode may be selected from the following metals: molybdenum, ruthenium, gold, magnesium, aluminum, tungsten, titanium, chromium, iridium, osmium, platinum, gallium, and germanium.
- the piezoelectric layer material may be selected from aluminum nitride, zinc oxide, lead titanium zirconate, lithium niobate, and the above materials doped with a certain proportion of rare earth elements.
- the piezoelectric material is a thin film with a thickness of less than 10 micrometers, and has a single crystal or polycrystalline structure, and is made by a sputtering (Sputtering) or organic metal vapor deposition (MOCVD) process.
- a traditional single resonator in an electronic device is split into a polygon resonator group composed of several polygonal sub-resonators.
- the above single resonator may be a polygon and may have curved sides. Polygons and can be curved sides. This structure increases the perimeter area ratio of the resonator, thereby improving the heat dissipation performance of the resonator and the overall power capacity of the electronic device.
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Abstract
一种***式谐振器,是由多个子谐振器并联构成的谐振器群,所述子谐振器的形状为多边形;所述***式谐振器具有2个引脚,所述2个引脚分别占据第一电位和第二电位。通过增加谐振器的周长面积比,从而提高谐振器的散热性能和电子器件整体的功率容量。
Description
本发明涉及谐振器,具体涉及一种***式谐振器。
利用压电薄膜在厚度方向的纵向谐振所制成的薄膜体波谐振器,在手机通讯和高速串行数据应用等方面已经成为声表面波器件和石英晶体谐振器的一个可行的替代。射频前端体波滤波器/双工器提供优越的滤波特性,例如低***损耗,陡峭的过渡带,较强的抗静电放电(ESD)能力。随着目前通讯等领域对滤波器和谐振器等电子器件功率容量要求的不断提高,滤波器和谐振器的发热量显著增大。高发热带来的高温会造成器件Q值和机电耦合系数大幅下降;此外高温还会造成由谐振器的频率发生漂移;另外高温还会降低器件整体寿命。以上诸多问题最终导致有谐振器构成的滤波器的性能参数如带宽,***损耗,滚降特性,带外抑制等发生严重劣化。
应对发热问题的传统手段是增大谐振器的面积。这种方法在一定功率范围内可有效降低谐振器中的功率密度,从而降低谐振器的工作温度。但单纯依靠增加面积的方法已不能满足当前的谐振器对功率容量的要求,需要对传统结构进一步改进。
发明内容
本发明的目的在于提供一种***式谐振器,不仅增加薄膜体声波谐振器的周长面积比,从而提高谐振器的散热性能和电子器件整体的功率容量;而且还能提高谐振器布局的合理性有效抑制高次谐波并提高电路的稳定性。
为实现上述目的,本发明提供如下技术方案:
一种***式谐振器,所述***式谐振器是由多个子谐振器并联构成的谐振器群,所述子谐振器的形状为多边形;所述***式谐振器具有2个引脚,所述2个引脚分别占据第一电位和第二电位。
可选地,每个所述子谐振器的一侧具有所述第一电位并且另一侧则具有所述第二电位。即每个***谐振器都只包含两组等电位连接。
可选地,每个所述子谐振器的压电层的C轴由所述第一电位指向所述第二电位,或者由所述第二电位指向所述第一电位。
可选地,***谐振器中的所有子谐振器的压电层可具有相同C轴指向。
可选地,其中至少1个子谐振器压电层的C轴指向与其余子谐振器中至少一个的压电层C轴指向相反。也就是说,不是所有子谐振器压电层C轴指向全部一致。
在不是所有子谐振器压电层C轴指向全部一致的情况下,可选地,有两个以上所述子谐振器的空间排布为轴对称,并且/或者,三个以上所述子谐振器的空间排布为中心对称,此时的子谐振器排布的对称性有助于抑制和抵消电路中的高次谐波,提高电路稳定性。
可选地,根据权利要求1所述的***式谐振器,其特征在于,所述多个子谐振器中的各子谐振器之间保持声学隔离。相邻的两个子谐振器的上电极-上电极之间,下电极-下电极之间以及压电层-压电层之间,至少有一处是不相连的,这两个子谐振器即保持声学隔离。例如,当上电极-上电极,下电极-下电极之间均存在电学连接时,压电层-压电层就应当断开。
两相邻子谐振器的上电极或下电极或压电层的间隙宽度不小于半个声波波长,或者不小于2个声波波长。
可选地,所述***式谐振器具备2组等电位互联,其中第1组等电位互联由位于第一电位的子谐振器的电极及这些电极之间的电学连接物构成,第2组等电位互联由位于第二电位的子谐振器的电极及这些电极之间的电学连接物构成。
可选地,所述等电位互联的结构为串行式和/或分支式。
可选地,所述上电极与所述下电极由金属、金属的多层复合材料或合金制成。
可选地,所述金属包括以下至少之一:钼、钌、金、镁、铝、钨、钛、铬、铱、锇、铂、镓、锗。
可选地,所述压电层材料包括:氮化铝,氧化锌,钛锆酸铅,铌酸锂,以及掺有一定比例稀土元素的上述材料。
本发明的有益效果在于:本发明将电子器件中传统的单一谐振器***成若干个多边形子谐振器构成的多边形谐振器群,这种结构能增加谐振器的周长面积比,从而提高谐振器的散热性能和电子器件整体的功率容量。此外,***式谐振器的另一个优点是有助于使得谐振器布局更为紧凑,从而合理利用空间,缩减器件尺寸。
附图用于更好地理解本发明,不构成对本发明的不当限定。其中:
图1为本发明的一种***连接布局;
图2为本发明的另一种***连接布局;
图3为本发明的另一种***连接布局;
图4为本发明的另一种***连接布局;
图5为本发明的另一种***连接布局;
图6为本发明的另一种***连接布局;
图7为本发明的另一种***连接布局;
图8为本发明的另一种***连接布局;
图9为本发明的另一种***连接布局;
图10是与本发明有关的等电位连接和C轴指向关系的说明图;
图11A和图11B分别是根据本发明实施方式的一种***式谐振器的俯视图和剖视图。
以下为本发明的关于薄膜体波谐振器的较佳实施方式,但并不因此而限定本发明的保护范围。
实施例1:
本实施例给出了一种***五边形谐振器,如图1所示,其中给出了所述谐振器的***方式和等电位电极的连接方式:谐振器R401的上电极具有引脚C400,通过电学连接C401-C405,沿图中箭头所示顺序,依次串行连接子谐振器R401、R402、R403、R404、R405、R406的上电极(实线部分)。以上的串行连接方式仅为一个示例,也可采用其他串行顺序。对于下电极(虚线部分)可采用相同方式连接,也可采用其他规定的方式遍历逐个连接各个子谐振器的等电位电极。此外,各实施例对应的图示以及具体描述仅涉及了***谐振器中的一组等电位连接,而省略了另一组等电位连接(此描述方式适用于本发明中所有实施例,在后续实施例中不再复述)。
需要说明的是,本发明各实施例中,串行连接并不是指电路的串并联中的串联,而是指各子谐振器的同一组等电位电极的先后连接顺序,即例如图1,5,7,8的方式,各子谐振器只与1个另一子谐振器连接,区别于放射型形式的连接,即区别于图2中的R606、图3的R701、 R706等。
各子谐振器之间的电学连接是并联的形式,例如对于一个子谐振器与另一子谐振器,二者的上电极互连,下电极互连。各附图可以理解为俯视图,因为不显示上述并联的状态。
此外,所述实施例中所涉及的“上电极”仅为等电位电极的一种可能组合,而等电位连接的电极组合仍可以有其他方式(此原则适用于本发明中所有的实施例),例如,某个电学连接也可改为连接某一子谐振器(如R401)的上电极和另一子谐振器(如R402)的下电极,等等。
为了确保相邻两子谐振器的声学隔离度,将两相邻子谐振器的上电极或下电极或压电层的间隙宽度设定为不小于半个声波波长,优选范围不小于2个声波波长。
此处需要说明的是,上述的上电极与所述下电极可由铂的多层复合材料或镓材料制成;每两个相邻谐振器之间至多只存在电学连接,而声学上保持隔离。
以上方式要求最终等效阻抗保持不变。
实施例2:
给出了一种***五边形谐振器的实施例,图2中给出了所述谐振器的***方式和上电极连接方式:谐振器R601的上电极具有引脚C600,首先R601的上电极(实线部分)通过C601连接至R606的上电极(实线部分),然后R606的上电极通过C602-C605放射型连接至R602-R605的上电极(实线部分)。以上的放射型连接方式仅为一个示例,也可采用其他放射型形式。对于下电极(虚线部分)可采用相同方式连接,也可采用其他方式。
此外,某个电学连接也可改为连接某一子谐振器(如R601)的上电极和另一子谐振器(如R606)的下电极。
以上方式要求最终等效阻抗保持不变。
实施例3:
如图7所示,五边形谐振器***为两个子谐振器R101和R102,C100上电极输入端,其中子谐振器的两个上电极通过导体C101实现电学连接。类似的子谐振器的下电极也可通过此方式进行电学连接。此外还可以将R101的上电极和R102的下电极相连,同样,也可以将R101的下电极和R102的上电极相连。
同时确保子谐振器R101和R102之间保持声学隔离:即两个谐振器相对应的电极本体或者压电层之中,至少有一方是不相连的。并且为了确保良好声学隔离状态,相邻子谐振器的电极间或压电层间的间隙宽度确保不小于半个声波波长,优选范围不小于2个声波波长。
实施例4:
如图4所示,将一五边形谐振器***成6个子谐振器:R801、R802、R803、R804、R805和R806。并经由C801-C810对各谐振器的上电极进行电学连接,并且在所有子谐振器的每两个等电位电极之间都确立一个连接,即各子谐振器与其相邻的所有子谐振器之间有连接。此外,还可以将某个谐振器(如R801)的上电极连接到与之相邻的谐振器(R802)下电极;也可以将某个谐振器(如R801)的下电极连接到与之相邻的谐振器(R802)上电极,同时,确保相邻的子谐振器之间声学隔离。
也可以采用其他连接方式,如图3所示,五边形谐振器***成6个子谐振器R701-R706,并按图中所示的方式连接,其中,自R701起 放射状分别连接至相邻子谐振器,以及自R706起放射状分别连接至相邻子谐振器。
实施例5:
如图5所示,六边形谐振器***为8个五边形子谐振器R901-R908,位于中部的两个子谐振器轴对称,周围6个子谐振器中心对称,并按图中所示方式连接所述谐振器的上电极。除此之外可选择其他***方式以及遍历的连接方式。
实施例6:
如图8和图9所示,五边形谐振器***为子谐振器R201-R203并且由单一路径遍历连接其上电极;或者***为子谐振器R301-R303,并由R301上电极放射状分别连接R302和R303的上电极。
实施例7:
进一步的,如图6所示,本发明的谐振器***方式还可进行如图6描述的拓展,即本发明在实现中,可用于***任意形状的谐振器,***轨迹可以是上图中TR1所示的直线,也可以是TR2所示的折线,也可以是TR3所示的圆弧,或是TR4所示的其它数学曲线或不规则曲线;也可采用上述***轨迹的结合,因此上文所述的多边形的边可以是直线或/和曲线。不论这里是直线还是曲线,相邻的子谐振器的边界处的两条边(即图中***轨迹两侧的边)最好是平行,这样有助于减小***式谐振器的面积。
关于等电位连接和C轴指向关系,以下结合图10加以说明。
如图10所示,子谐振器Rsub1-Rsub4分别具有上电极EH1-EH4,下电极EL1-EL4以及压电层A1-A4;4个子谐振器的压电层分别具有C轴指向C1-C4。子谐振器的电极之间由导体(实线F1,F2和F3以及虚线D1,D2和D3)进行等电位连接。
其中EH1-F1-EL2-F2-EH3-F3-EH4形成1组等电位连接(这里称为A),而EL1-D1-EH2-D2-EL3-D3-EL4形成另一组等电位连接(称为B)。若A占据第1电位,那么B占据第2电位。当等电位连接确立之后,A中的所有被连接的电极全部具有第1电位,相应的,B中所有被连接的电极都具有第2电位。
当涉及某一子谐振器与其他子谐振器压电层的C轴指向关系时,是参照电位来说的。例如,尽管Rsub1和Rsub2的C轴(C1和C2)在图中具有相同的几何指向,然而通过对电位进行参考可知C1由第2电位指向第1电位,而C2由第1电位指向第2电位,因此在电位意义下C1和C2是反向的。同理,图中几何方向相反的C2和C3,在电位意义下却是同向的。而C3和C4在电位意义下的关系,较前面两个例子就容易判断(C3和C4在电位意义下是相反的)。
结合上述说明,在本发明的实施方式中,***式谐振器具有2个引脚,该2个引脚分别占据第一电位和第二电位。每个子谐振器的一侧具有上述第一电位并且另一侧则具有上述第二电位。即每个***谐振器都只包含两组等电位连接。每个子谐振器的压电层的C轴由上述第一电位指向上述第二电位,或者由上述第二电位指向上述第一电位。其中至少1个子谐振器压电层的C轴指向与其余子谐振器中至少一个的压电层C轴指向相反。
图11A和图11B分别是根据本发明实施方式的一种***式谐振器的俯视图和剖视图。如图11A所示,谐振器SR0***为6个子谐振器SR1-SR6。可以看出,***之后,子谐振器的面积总和较***之前没有显著变化,然而子谐振器的周长总和却较***之前显著增加,图1中虚线部分即为***后的周长较***前增加的部分。因此***后的总周长与谐振器总面积的比值也显著增加。
若将图1中的谐振器沿直线A1A2剖开,即可得到图11B中的剖视示意图。若谐振器未***,谐振器SR0工作时产生的热量只能从途径Q1和Q2自谐振器的三明治结构散失到基底中。当SR0***之后,散热途径显著增加,这时热量不仅通过Q1和Q2,还通过Q3-Q6途径向基底散失,因此上述的***结构通过提升谐振器的散热效能从而提高了谐振器的功率容量。
在本发明的实施方式中,***后的相邻子谐振器的电极间或压电层间的间隙值不小于半个声波波长,优选范围不小于2个声波波长。
在本发明的实施方式中,上电极和下电极的材料可从以下金属中选择:钼、钌、金、镁、铝、钨、钛、铬、铱、锇、铂、镓、锗。
压电层材料可选自:氮化铝,氧化锌,钛锆酸铅,铌酸锂,以及掺有一定比例稀土元素的上述材料。所述压电材料为厚度小于10微米的薄膜,并具有单晶或多晶结构,采用溅射(Sputtering)或有机金属气相沉积(MOCVD)工艺制成。
根据本发明的实施方式,将电子器件中传统的单一谐振器***成若干个多边形子谐振器构成的多边形谐振器群,上述单一谐振器可以是多边形并且可以具有曲线的边,***得到的同样为多边形并且可以是曲线的边。这种结构增加了谐振器的周长面积比,从而提高谐振器的散热性能和电子器件整体的功率容量。
上述具体实施方式,并不构成对本发明保护范围的限制。本领域技术人员应该明白的是,取决于设计要求和其他因素,可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等,均应包含在本发明保护范围之内。
Claims (12)
- 一种***式谐振器,其特征在于:所述***式谐振器是由多个子谐振器并联构成的谐振器群,所述子谐振器的形状为多边形;所述***式谐振器具有2个引脚,所述2个引脚分别占据第一电位和第二电位。
- 根据权利要求1所述的***式谐振器,其特征在于,每个所述子谐振器的一侧具有所述第一电位并且另一侧则具有所述第二电位。
- 根据权利要求1或2所述的***式谐振器,其特征在于,每个所述子谐振器的压电层的C轴由所述第一电位指向所述第二电位,或者由所述第二电位指向所述第一电位。
- 根据权利要求3所述的***式谐振器,其特征在于,其中至少1个子谐振器压电层的C轴指向与其余子谐振器中至少一个的压电层C轴指向相反。
- 根据权利要求4所述的***式谐振器,其特征在于,有两个以上所述子谐振器的空间排布为轴对称,并且/或者,三个以上所述子谐振器的空间排布为中心对称。
- 根据权利要求1所述的***式谐振器,其特征在于,所述多个子谐振器中的各子谐振器之间保持声学隔离。
- 根据权利要求6所述的***式谐振器,其特征在于,两相邻子谐振器的上电极或下电极或压电层的间隙宽度不小于半个声波波长,或者不小于2个声波波长。
- 根据权利要求1所述的***式谐振器,其特征在于,所述***式谐振器具备2组等电位互联,其中第1组等电位互联由位于第一电位的子谐振器的电极及这些电极之间的电学连接物构成,第2组等电位互联由位于第二电位的子谐振器的电极及这些电极之间的电学连接物构成。
- 根据权利要求8所述的***式谐振器,其特征在于,所述等电位互联的结构为串行式和/或分支式。
- 根据权利要求1所述的一种***式谐振器,其特征在于:所述上电极与所述下电极由金属、金属的多层复合材料或合金制成。
- 根据权利要求1所述的一种***式谐振器,其特征在于:所述金属包括以下至少之一:钼、钌、金、镁、铝、钨、钛、铬、铱、锇、铂、镓、锗。
- 根据权利要求1所述的一种***式谐振器,其特征在于,所述压电层材料包括:氮化铝,氧化锌,钛锆酸铅,铌酸锂,以及掺有一定比例稀土元素的上述材料。
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CN103455683A (zh) * | 2013-09-12 | 2013-12-18 | 诺思(天津)微***有限公司 | 一种压电声波滤波器的设计和布局方法 |
CN103490743A (zh) * | 2013-09-22 | 2014-01-01 | 中国电子科技集团公司第十三研究所 | 一种薄膜baw谐振器和baw滤波器 |
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CN102064374A (zh) * | 2010-12-17 | 2011-05-18 | 哈尔滨工程大学 | 基于异向介质的***式谐振器 |
CN103455683A (zh) * | 2013-09-12 | 2013-12-18 | 诺思(天津)微***有限公司 | 一种压电声波滤波器的设计和布局方法 |
CN103490743A (zh) * | 2013-09-22 | 2014-01-01 | 中国电子科技集团公司第十三研究所 | 一种薄膜baw谐振器和baw滤波器 |
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