WO2020130161A1 - Millimeter wave high power switch - Google Patents
Millimeter wave high power switch Download PDFInfo
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- WO2020130161A1 WO2020130161A1 PCT/KR2018/015979 KR2018015979W WO2020130161A1 WO 2020130161 A1 WO2020130161 A1 WO 2020130161A1 KR 2018015979 W KR2018015979 W KR 2018015979W WO 2020130161 A1 WO2020130161 A1 WO 2020130161A1
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- switch
- end switch
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- electrical connection
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- 230000005540 biological transmission Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 8
- 238000003780 insertion Methods 0.000 abstract description 22
- 230000037431 insertion Effects 0.000 abstract description 21
- 238000004891 communication Methods 0.000 abstract description 11
- 238000011161 development Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 101710176296 Switch 2 Proteins 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
- H04B1/0064—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with separate antennas for the more than one band
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/44—Transmit/receive switching
- H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/54—Circuits using the same frequency for two directions of communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
- H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
- H04B7/06—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
- H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
- H04B7/06—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
- H04B7/0602—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using antenna switching
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
- H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
- H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
- H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
- H04B7/08—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station
- H04B7/0837—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the receiving station using pre-detection combining
Definitions
- the present invention relates to a switch circuit, and more particularly, to a millimeter wave high power switch with improved insertion characteristics and reduced insertion loss in the millimeter frequency band.
- 1 is a structure of a SPDT switch that is commonly used.
- the M1 switch and the M4 switch In order to connect the TX and the antenna in FIG. 1, the M1 switch and the M4 switch must be turned on, and the M3 switch and M2 switch must be turned off.
- the reason why the M4 switch is turned on is to increase the isolation of the entire switch by removing this signal once more through M4 when the signal is leaked to the RX side through the turned off M2 switch.
- the insertion loss of the switch is determined by the on resistance of the switched M1 switch, and the on resistance is as follows.
- W is the size of the transistor and L is the channel length. Then the insertion loss is as follows.
- the insertion loss becomes worse due to parasitic capacitor components such as Cgs and Cgd, and the insertion loss is better when a small transistor is used.
- FIG. 2 The circuit for overcoming the parasitic capacitor is shown in FIG. 2. This structure minimizes the parasitic loss of the switch by resonating out the parasitic capacitor generated in the switch using a parallel inductor (L DS ).
- FIG. 3 Another switch structure frequently used in millimeter wave is illustrated in FIG. 3. It is a circuit technology that converts on-off parasitic characteristics of a switch into an artificial transmission line and switches it as a traveling wave structure.
- This technology also has a problem in that a transistor that constitutes a transmission line is determined in size, so that a transistor of a large size cannot be used.
- the above-mentioned structures cannot make a high-power switch based on a problem such as size limitation of transistors, so they usually have a P1dB of about 10 dBm in millimeter waves (Fig. 4), which cannot withstand high output PA signals in TTD systems. It has a problem (Fig. 5).
- the present invention has been devised to solve the above problems, and an object of the present invention is to develop a module that needs to integrate a large number of transceivers in the millimeter frequency band when constructing an TTD communication system using a millimeter wave frequency, By providing a low insertion loss and high power capability, it is to provide a high-power switch to be applied to the activation of a millimeter high-speed communication system.
- the high-power switch includes a first transmission-end switch for switching the electrical connection between the transmission end and the antenna; A second transmitting end switch for switching an electrical connection between the transmitting end and ground; A first receiving end switch for switching an electrical connection between the receiving end and the antenna; A second receiving end switch for switching an electrical connection between the receiving end and ground; It includes a controller for controlling the switching operation of the first transmitting end switch, the second transmitting end switch, the first receiving end switch and the second receiving end switch, and controls the body voltage of the first transmitting end switch and the body voltage of the second transmitting end switch.
- a bias voltage is applied to the drain or source of the first transmission terminal switch, and when the first transmission terminal switch is turned on, the controller may control the body voltage of the first transmission terminal switch to be higher than the bias voltage.
- the controller may control the body voltage of the first transmission end switch to be lower than the bias voltage.
- a bias power is applied to the drain or source of the second receiving terminal switch, and when the first receiving terminal switch is turned on, the controller may control the body voltage of the first receiving terminal switch to be higher than the bias voltage.
- the controller may control the body voltage of the first receiving end switch to be lower than the bias voltage.
- the bias power supply may be 1V or more.
- a first inductor having one end connected to the drain of the first transmission end switch and the other end connected to the source of the first transmission end switch; And a second inductor having one end connected to the drain of the first receiving end switch and the other end connected to the source of the first receiving end switch.
- a first transmitting end switch for switching an electrical connection between a transmitting end and an antenna
- a second transmitting end switch for switching an electrical connection between a transmitting end and a ground
- a first receiving end switch for switching an electrical connection between a receiving end and an antenna
- Controlling a switching operation of a second receiving end switch that switches an electrical connection between the receiving end and the ground
- a millimeter wave switch that can withstand high output while having a low insertion loss, so that when a TTD communication system is constructed using a millimeter wave frequency or millimeter
- a module that requires integration of many transceivers in a frequency band, it is possible to improve the performance of a millimeter high-speed communication system by providing low insertion loss and high power capability.
- Figure 2 is a switch that compensates for the parasitic capacitor
- FIG. 10 is a circuit diagram of a high-power switch according to an embodiment of the present invention.
- 11 is a comparison of the performance of a conventional switch and a high-power switch according to an embodiment of the present invention.
- a millimeter wave high power switch is proposed in which the insertion loss is reduced in the millimeter frequency band and the high power characteristics are improved.
- the high voltage characteristic of the switch is improved by electrode modulation of the body voltage of the transistor.
- FIG. 6 is a diagram showing a structural diagram of a transistor having a deep nwell structure.
- a gate terminal which is a control terminal to turn on/off the switch, and a drain and source terminal to be used as both ends of the switch, and there are parasitic capacitors such as C GD and C GS .
- a method of reducing insertion loss by compensating parasitic capacitors such as C GD and C GS using inductors L1 and L2 is applied.
- the structure presented in FIG. 7 will have a problem in a portion that withstands a high power signal. First, when the switch is off, the cause of the high power limitation will be analyzed.
- the switched off is modeled together with the body voltage.
- the reverse diode connected to the body turns on, creating a loss, and as a result, the switch cannot withstand high output.
- FIG. 9 It is a diagram of voltage swing when the drain and source are biased with a high voltage (2V in this case) and the body voltage is biased with ground.
- the effective Gm decreases due to the body effect, which in turn leads to an effect of increasing the Ron, resulting in an opposite benefit to increase insertion loss.
- FIG. 10 is a circuit diagram of a high-power switch according to an embodiment of the present invention.
- the high-power switch according to an embodiment of the present invention, as shown in Figure 10, the transmitting end switch (110, 120), the receiving end switch (130, 140), the controller 150, the inductors (L1, L2) and the DC blocking capacitor (Cb1, Cb2, Cb3).
- the transmitting end switch-1 110 switches the electrical connection between the transmitting end TX and the antenna, and the transmitting end switch-2 120 switches the electrical connection between the transmitting end TX and the ground.
- a high DC bias voltage for example, a voltage of 1 V or more is applied to the drain and/or source of the transmitter 1 switch 110.
- Blocking capacitor-1 (Cb1) is used for high bias.
- an inductor-1 (L1) is connected to the switch 1 110 of the transmitter. Specifically, one end of the inductor-1 (L1) is connected to the drain of the transmitting end switch-1 110, and the other end is connected to the source of the transmitting end switch-1 110.
- the receiving end switch-1 130 switches the electrical connection between the receiving end RX and the antenna, and the receiving end switch-2 140 switches the electrical connection between the receiving end RX and the ground.
- a high DC bias voltage for example, a voltage of 1 V or more is applied to the drain and/or source of the receiving terminal switch-1 130.
- Blocking capacitor-2 (Cb2) is used for high bias.
- the inductor-2 (L2) is connected to the receiving terminal switch-1 (130). Specifically, one end of the inductor-2 (L2) is connected to the drain of the receiving end switch-1 130, and the other end is connected to the source of the receiving end switch-1 130.
- the controller 150 controls the switching operation of the transmitting end switch-1 110, the transmitting end switch-2 120, the receiving end switch-1 130, and the receiving end switch-2 140 according to the communication mode.
- the transmitting end switch-1 110 and the receiving end switch-2 140 are turned on, and the transmitting end switch-2 120 and the receiving end switch-1 130 are turned off.
- the receiving end switch-1 130 and the transmitting end switch-2 120 are turned on, and the receiving end switch-2 140 and the transmitting end switch-1 110 are turned off.
- controller 150 controls the body voltage of the switch 1 110 of the transmitting end and the body voltage of the switch 2 120 of the transmitting end.
- the controller 150 controls the body voltage of the transmitting end switch-1 110 to be higher than the bias voltage VB in the transmitting mode in which the transmitting end switch-1 110 is turned on. This is to reduce the on resistance of the transmitter-end switch-1 110 and consequently to reduce insertion loss.
- the controller 150 controls the body voltage of the receiving end switch-1 130 to be lower than the bias voltage VB. This is to prevent the diode of the receiving terminal switch-1 130 that is turned off when the high output signal is switched on.
- the controller 150 controls the body voltage of the receiving terminal switch-1 130 to be higher than the bias voltage VB in the receiving mode in which the receiving terminal switch-1 130 is turned on. This is to reduce the on resistance of the receiving end switch-1 130, thereby reducing insertion loss.
- the controller 150 controls the body voltage of the switch 1 110 of the transmitting end to be lower than the bias voltage VB. This is to prevent the diode of the transmitter 1 switch 130 from being turned off when the high output signal is switched on.
- FIG. 11 is a view showing a result of comparing the performance of a conventional switch and a high-power switch according to an embodiment of the present invention.
- FIG. 11 is a view showing the performance comparison result of a high-power switch according to an embodiment of the present invention and the existing switch. It can be seen that the insertion loss of the high-power switch (FIG. 10) according to the embodiment of the present invention is the same as the low-insertion loss structure of FIG. 7, and the signal can be switched over 10 times (10 dB).
- the antenna matching of the structure according to the embodiment of the present invention can be implemented as an Lmatch parallel inductor, so it can be expected that it will be effective for output ESD.
- a low insertion loss and high power capability are provided, thereby providing a high-speed communication system. It suggested the core structure to be applied for activation.
- the technical field to which the embodiment of the present invention belongs is a technology related to mobile communication parts, modules, and systems, and is highly applicable to a 5G mobile communication front end module being prepared as a next generation mobile communication. In addition, it has high utilization value as a millimeter wave TTD communication switch.
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Abstract
Provided is a high power switch to be applied to the energization of a millimeter high-speed communication system by providing a low insertion loss and a high power capability in the construction of a TDD communication system by using a millimeter wave frequency or in the development of a module in which a lot of transceivers of a millimeter frequency band should be integrated. A high power switch according to an embodiment of the present invention comprises: a first transmission end switch for switching an electrical connection between a transmission end and an antenna; a second transmission end switch for switching an electrical connection between the transmission end and the ground; a first reception end switch for switching an electrical connection between a reception end and the antenna; a second reception end switch for switching an electrical connection between the reception end and the ground; and a controller for controlling switching operations of the first transmission end switch, the second transmission end switch, the first reception end switch, and the second reception end switch and controlling the body voltage of the first transmission end switch and the body voltage of the second transmission end switch.
Description
본 발명은 스위치 회로에 관한 것으로, 더욱 상세하게는 밀리미터주파수 대역에서 삽입손실을 줄이고 고출력 특성을 개선한 밀리미터웨이브 고출력 스위치에 관한 것이다.The present invention relates to a switch circuit, and more particularly, to a millimeter wave high power switch with improved insertion characteristics and reduced insertion loss in the millimeter frequency band.
도 1은 보편적으로 사용하고 있는 SPDT 스위치의 구조이다. 도 1에서 TX와 안테나가 연결되기 위해서는 M1 스위치와 M4 스위치가 켜지고 M3 스위치와 M2 스위치는 꺼져야 한다.1 is a structure of a SPDT switch that is commonly used. In order to connect the TX and the antenna in FIG. 1, the M1 switch and the M4 switch must be turned on, and the M3 switch and M2 switch must be turned off.
여기서 M4 스위치가 켜지는 이유는 꺼진 M2 스위치를 통해 신호가 RX 측으로 leakage 되었을 때, 이 신호를 M4를 통해 한번 더 제거함으로써 전체 스위치의 isolation을 증가시키는 역할을 한다.Here, the reason why the M4 switch is turned on is to increase the isolation of the entire switch by removing this signal once more through M4 when the signal is leaked to the RX side through the turned off M2 switch.
이때 스위치의 삽입손실은 켜진 M1 스위치의 on 저항에 의해서 결정되는데 On 저항은 다음의 수식과 같다.At this time, the insertion loss of the switch is determined by the on resistance of the switched M1 switch, and the on resistance is as follows.
W는 트랜지스터의 크기이고 L은 channel length이다. 그러면 삽입 손실은 다음과 같이 된다. W is the size of the transistor and L is the channel length. Then the insertion loss is as follows.
결국 Ron값이 작아야 스위치의 삽입손실이 작아지고 이를 위해서 트랜지스터의 L은 작게 W는 크게 만들어야 한다. 하지만 수십 GHz에 달하는 밀리미터웨이브 주파수에서 트랜지스터의 크기를 크게하면 Cgs, Cgd등 기생 capacitor 성분들 때문에 삽입손실이 나빠지게 되고 오히려 작은 트랜지스터를 사용하는 경우가 삽입손실이 더 좋은 결과를 가져온다.Eventually, the smaller the Ron value, the smaller the insertion loss of the switch, and for this, L of the transistor must be made small and W must be made large. However, when the size of the transistor is increased at a millimeter wave frequency reaching several tens of GHz, the insertion loss becomes worse due to parasitic capacitor components such as Cgs and Cgd, and the insertion loss is better when a small transistor is used.
기생 capacitor를 극복하기 위한 회로를 도 2에 도시하였다. 스위치에서 발생하는 기생 capacitor를 병렬 inductor(LDS)를 사용하여 resonate out 시켜서 스위치가 가지고 있는 기생 loss를 최소화 하는 구조이다.The circuit for overcoming the parasitic capacitor is shown in FIG. 2. This structure minimizes the parasitic loss of the switch by resonating out the parasitic capacitor generated in the switch using a parallel inductor (L DS ).
이 구조를 사용하면 insertion loss를 줄일 수 있지만 트랜지스터의 크기가 인덕터의 quality factor와 상관관계를 가지고 있어 트랜지스터의 크기를 아주 크게 할 수는 없다.Using this structure, insertion loss can be reduced, but the size of the transistor is correlated with the quality factor of the inductor, so the size of the transistor cannot be made very large.
밀리미터웨이브에서 많이 사용하는 또 다른 스위치 구조를 도 3에 도시하였다. 일명 Traveling wave 구조로써 스위치의 on-off 기생 특성을 artificial transmission line으로 변환하여 스위칭하는 회로 기술이다.Another switch structure frequently used in millimeter wave is illustrated in FIG. 3. It is a circuit technology that converts on-off parasitic characteristics of a switch into an artificial transmission line and switches it as a traveling wave structure.
이 기술 역시 transmission line을 구성하는 트랜지스터의 크기가 정해져 있어 큰 크기의 트랜지스터를 사용할 수 없다는 문제가 있다. This technology also has a problem in that a transistor that constitutes a transmission line is determined in size, so that a transistor of a large size cannot be used.
앞서 이야기한 구조들은 트랜지스터의 크기 제한 등의 문제를 바탕으로 고출력 스위치를 만들 수 없어서 보통 밀리미터웨이브에서는 10 dBm 정도의 P1dB를 가지고 있으며(도 4), 이는 TTD 시스템에서 높은 출력의 PA 신호를 견디지 못하는 문제점을 가지고 있다(도 5).The above-mentioned structures cannot make a high-power switch based on a problem such as size limitation of transistors, so they usually have a P1dB of about 10 dBm in millimeter waves (Fig. 4), which cannot withstand high output PA signals in TTD systems. It has a problem (Fig. 5).
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은, 밀리미터웨이브 주파수를 사용하여 TTD 통신 시스템을 구축하는 경우 또는 밀리미터주파수 대역의 많은 송수신기를 집적화해야 하는 모듈 개발에 있어서, 낮은 삽입손실과 높은 파워 capability를 제공함으로써 밀리미터 고속 통신시스템의 활성화에 적용될 고출력 스위치를 제공함에 있다.The present invention has been devised to solve the above problems, and an object of the present invention is to develop a module that needs to integrate a large number of transceivers in the millimeter frequency band when constructing an TTD communication system using a millimeter wave frequency, By providing a low insertion loss and high power capability, it is to provide a high-power switch to be applied to the activation of a millimeter high-speed communication system.
상기 목적을 달성하기 위한 본 발명의 일 실시예에 따른, 고출력 스위치는 송신단과 안테나 간의 전기적 연결을 스위칭하는 제1 송신단 스위치; 송신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 송신단 스위치; 수신단과 안테나 간의 전기적 연결을 스위칭하는 제1 수신단 스위치; 수신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 수신단 스위치; 제1 송신단 스위치, 제2 송신단 스위치, 제1 수신단 스위치 및 제2 수신단 스위치의 스위칭 동작을 제어하고, 제1 송신단 스위치의 Body 전압과 제2 송신단 스위치의 Body 전압을 제어하는 제어기;를 포함한다. According to an embodiment of the present invention for achieving the above object, the high-power switch includes a first transmission-end switch for switching the electrical connection between the transmission end and the antenna; A second transmitting end switch for switching an electrical connection between the transmitting end and ground; A first receiving end switch for switching an electrical connection between the receiving end and the antenna; A second receiving end switch for switching an electrical connection between the receiving end and ground; It includes a controller for controlling the switching operation of the first transmitting end switch, the second transmitting end switch, the first receiving end switch and the second receiving end switch, and controls the body voltage of the first transmitting end switch and the body voltage of the second transmitting end switch.
제1 송신단 스위치의 드레인 또는 소스에는 바이어스 전압이 인가되고, 제어기는, 제1 송신단 스위치를 턴 온 시키면, 제1 송신단 스위치의 Body 전압이 바이어스 전압 보다 높아지도록 제어하는 것일 수 있다.A bias voltage is applied to the drain or source of the first transmission terminal switch, and when the first transmission terminal switch is turned on, the controller may control the body voltage of the first transmission terminal switch to be higher than the bias voltage.
제어기는, 제1 송신단 스위치를 턴 오프 시키면, 제1 송신단 스위치의 Body 전압이 바이어스 전압 보다 낮아지도록 제어하는 것일 수 있다.When the controller turns off the first transmission end switch, the controller may control the body voltage of the first transmission end switch to be lower than the bias voltage.
제2 수신단 스위치의 드레인 또는 소스에는 바이어스 전원이 인가되며, 제어기는, 제1 수신단 스위치를 턴 온 시키면, 제1 수신단 스위치의 Body 전압이 바이어스 전압 보다 높아지도록 제어하는 것일 수 있다.A bias power is applied to the drain or source of the second receiving terminal switch, and when the first receiving terminal switch is turned on, the controller may control the body voltage of the first receiving terminal switch to be higher than the bias voltage.
제어기는, 제1 수신단 스위치를 턴 오프 시키면, 제1 수신단 스위치의 Body 전압이 바이어스 전압 보다 낮아지도록 제어하는 것일 수 있다.When the first receiving end switch is turned off, the controller may control the body voltage of the first receiving end switch to be lower than the bias voltage.
바이어스 전원은, 1V 이상일 수 있다.The bias power supply may be 1V or more.
일단이 제1 송신단 스위치의 드레인에 연결되고, 타단이 제1 송신단 스위치의 소스에 연결된 제1 인덕터; 및 일단이 제1 수신단 스위치의 드레인에 연결되고, 타단이 제1 수신단 스위치의 소스에 연결된 제2 인덕터;를 더 포함할 수 있다. A first inductor having one end connected to the drain of the first transmission end switch and the other end connected to the source of the first transmission end switch; And a second inductor having one end connected to the drain of the first receiving end switch and the other end connected to the source of the first receiving end switch.
본 발명의 다른 측면에 따르면, 송신단과 안테나 간의 전기적 연결을 스위칭하는 제1 송신단 스위치, 송신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 송신단 스위치, 수신단과 안테나 간의 전기적 연결을 스위칭하는 제1 수신단 스위치 및 수신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 수신단 스위치의 스위칭 동작을 제어하는 단계; 제1 송신단 스위치의 Body 전압과 제2 송신단 스위치의 Body 전압을 제어하는 단계;를 포함하는 것을 특징으로 하는 고출력 스위칭 방법이 제공된다.According to another aspect of the present invention, a first transmitting end switch for switching an electrical connection between a transmitting end and an antenna, a second transmitting end switch for switching an electrical connection between a transmitting end and a ground, a first receiving end switch for switching an electrical connection between a receiving end and an antenna, Controlling a switching operation of a second receiving end switch that switches an electrical connection between the receiving end and the ground; And controlling the body voltage of the first transmission end switch and the body voltage of the second transmission end switch.
이상 설명한 바와 같이, 본 발명의 실시예들에 따르면, 낮은 삽입 손실을 가지면서 동시에 높은 출력에서 견딜수 있는 밀리미터웨이브 스위치를 이용할 수 있게 되어, 밀리미터웨이브 주파수를 사용하여 TTD 통신 시스템을 구축하는 경우 또는 밀리미터주파수 대역의 많은 송수신기를 집적화해야 하는 모듈 개발에 있어서, 낮은 삽입손실과 높은 파워 capability를 제공함으로써 밀리미터 고속 통신시스템의 성능 향상이 가능해진다.As described above, according to embodiments of the present invention, it is possible to use a millimeter wave switch that can withstand high output while having a low insertion loss, so that when a TTD communication system is constructed using a millimeter wave frequency or millimeter In the development of a module that requires integration of many transceivers in a frequency band, it is possible to improve the performance of a millimeter high-speed communication system by providing low insertion loss and high power capability.
도 1은 기존 SPDT 스위치 구조,1 is a conventional SPDT switch structure,
도 2는 기생 Capacitor를 보상한 스위치,Figure 2 is a switch that compensates for the parasitic capacitor,
도 3은 Traveling Wave 스위치 구조,3 is a Traveling Wave switch structure,
도 4는 Traveling Wave 방법을 이용한 60GHz에서의 고출력 특성,4 is a high-power characteristics at 60GHz using the Traveling Wave method,
도 5는 TTD 스위치 시스템,5 is a TTD switch system,
도 6은 트랜지스터의 세부 구조,6 is a detailed structure of the transistor,
도 7은 저 삽입 손실을 위한 적용 구조,7 is an application structure for low insertion loss,
도 8은 스위치 Off시 고전압 입력 손실 문제점 분석,8 is a high voltage input loss problem analysis when the switch is off,
도 9는 Drain과 Source 바이어스로 고전압 입력을 견디는 원리,9 is a principle of withstanding high voltage input with drain and source bias,
도 10은 본 발명의 일 실시예에 따른 고출력 스위치의 회로도,10 is a circuit diagram of a high-power switch according to an embodiment of the present invention,
도 11은 기존 스위치와 본 발명의 일 실시예에 따른 고출력 스위치의 성능 비교이다.11 is a comparison of the performance of a conventional switch and a high-power switch according to an embodiment of the present invention.
이하에서는 도면을 참조하여 본 발명을 보다 상세하게 설명한다.Hereinafter, the present invention will be described in more detail with reference to the drawings.
본 발명의 실시예에서는 밀리미터주파수 대역에서 삽입손실을 줄이고 고출력 특성을 개선한 밀리미터웨이브 고출력 스위치를 제시한다. 본 발명의 실시예에 따른 고출력 스위치는, 트랜지스터의 Body 전압을 전극 modulation 해서 스위치의 고출력 특성을 개선한다.In an embodiment of the present invention, a millimeter wave high power switch is proposed in which the insertion loss is reduced in the millimeter frequency band and the high power characteristics are improved. In the high power switch according to an embodiment of the present invention, the high voltage characteristic of the switch is improved by electrode modulation of the body voltage of the transistor.
도 6은 deep nwell 구조를 가지고 있는 트랜지스터의 구조도를 도시화한 도이다. 스위치를 on-off 하는 컨트롤 단자인 Gate 단자와 스위치 양단으로 사용될 Drain과 Source 단자가 있고 이들 사이에는 CGD, CGS 등 기생 capacitor들이 있다.6 is a diagram showing a structural diagram of a transistor having a deep nwell structure. There is a gate terminal which is a control terminal to turn on/off the switch, and a drain and source terminal to be used as both ends of the switch, and there are parasitic capacitors such as C GD and C GS .
본 발명의 실시예에서는, 도 7에 도시된 바와 같이, 인덕터(L1, L2)를 사용하여 CGD, CGS 등 기생 capacitor들을 보상하여 삽입 손실을 줄이는 방법을 적용하였다.In an embodiment of the present invention, as shown in FIG. 7, a method of reducing insertion loss by compensating parasitic capacitors such as C GD and C GS using inductors L1 and L2 is applied.
도 7에 제시된 구조는 고출력 신호를 견디는 부분에 있어서 문제점을 가지고 있을 것인데, 가장 먼저 스위치가 off 되었을 경우 고출력이 제한되는 원인부터 분석해 본다.The structure presented in FIG. 7 will have a problem in a portion that withstands a high power signal. First, when the switch is off, the cause of the high power limitation will be analyzed.
도 8에는 꺼져있는 스위치를 Body 전압과 함께 모델링을 하였다. 스위치 Drain에 큰 전압이 인가되었을 때, Body와 연결된 역방향 diode가 turn on 되면서 loss를 만들어내고 결과적으로 스위치가 고출력을 견딜 수 없게 된다.In Fig. 8, the switched off is modeled together with the body voltage. When a large voltage is applied to the switch drain, the reverse diode connected to the body turns on, creating a loss, and as a result, the switch cannot withstand high output.
이를 개선한 회로가 도 9에 도시되었다. Drain과 Source를 높은 전압(여기서는 2V)으로 Bias 잡아두고 Body 전압은 그라운드로 바이어스를 잡아둔 경우에 전압스윙의 도이다.The circuit that improved this is shown in FIG. 9. It is a diagram of voltage swing when the drain and source are biased with a high voltage (2V in this case) and the body voltage is biased with ground.
Drain과 Source 측 전압이 높게 형성되어 있기에 도 9를 통해 알 수 있는 바와 같이 같은 전압 하에서 Diode가 켜지지 않아 더 높은 전압을 견딜 수 있음을 확인 할 수 있다. Since the drain and source side voltages are formed high, it can be confirmed that the diode is not turned on under the same voltage to withstand higher voltages as shown in FIG. 9.
하지만 Source와 Body 전압이 다르고 Source 전압이 Body 전압보다 높았을 때에는 Body effect에 의해 Effective Gm이 감소하여 이는 결국 Ron을 크게하는 효과로 작용, 삽입손실을 높이는 반대급부가 생기게 된다.However, when the source and body voltages are different and the source voltage is higher than the body voltage, the effective Gm decreases due to the body effect, which in turn leads to an effect of increasing the Ron, resulting in an opposite benefit to increase insertion loss.
이에 본 발명의 실시예에는 도 10에 도시된 스위치를 제시한다. 도 10은 본 발명의 일 실시예에 따른 고출력 스위치의 회로도이다.Accordingly, in the embodiment of the present invention, the switch shown in FIG. 10 is presented. 10 is a circuit diagram of a high-power switch according to an embodiment of the present invention.
본 발명의 실시예에 따른 고출력 스위치는, 도 10에 도시된 바와 같이, 송신단 스위치(110, 120), 수신단 스위치(130, 140), 제어기(150), 인덕터(L1, L2) 및 DC 블럭킹 커페시터(Cb1, Cb2, Cb3)를 포함하여 구성된다.The high-power switch according to an embodiment of the present invention, as shown in Figure 10, the transmitting end switch (110, 120), the receiving end switch (130, 140), the controller 150, the inductors (L1, L2) and the DC blocking capacitor (Cb1, Cb2, Cb3).
송신단 스위치-1(110)은 송신단(TX)과 안테나 간의 전기적 연결을 스위칭하고, 송신단 스위치-2(120)는 송신단(TX)과 그라운드 간의 전기적 연결을 스위칭한다.The transmitting end switch-1 110 switches the electrical connection between the transmitting end TX and the antenna, and the transmitting end switch-2 120 switches the electrical connection between the transmitting end TX and the ground.
송신단 스위치-1(110)의 드레인 및/또는 소스에는 높은 DC 바이어스 전압(VB), 예를 들어, 1V 이상의 전압이 인가된다. 블럭킹 커페시터-1(Cb1)는 높은 바이어스를 위해 이용된다.A high DC bias voltage (VB), for example, a voltage of 1 V or more is applied to the drain and/or source of the transmitter 1 switch 110. Blocking capacitor-1 (Cb1) is used for high bias.
또한, 송신단 스위치-1(110)에는 인덕터-1(L1)가 연결된다. 구체적으로, 인덕터-1(L1)의 일단은 송신단 스위치-1(110)의 드레인에 연결되고, 타단은 송신단 스위치-1(110)의 소스에 연결된다.In addition, an inductor-1 (L1) is connected to the switch 1 110 of the transmitter. Specifically, one end of the inductor-1 (L1) is connected to the drain of the transmitting end switch-1 110, and the other end is connected to the source of the transmitting end switch-1 110.
수신단 스위치-1(130)은 수신단(RX)과 안테나 간의 전기적 연결을 스위칭하고, 수신단 스위치-2(140)는 수신단(RX)과 그라운드 간의 전기적 연결을 스위칭한다.The receiving end switch-1 130 switches the electrical connection between the receiving end RX and the antenna, and the receiving end switch-2 140 switches the electrical connection between the receiving end RX and the ground.
수신단 스위치-1(130)의 드레인 및/또는 소스에도 높은 DC 바이어스 전압(VB), 예를 들어, 1V 이상의 전압이 인가된다. 블럭킹 커페시터-2(Cb2)는 높은 바이어스를 위해 이용된다.A high DC bias voltage (VB), for example, a voltage of 1 V or more is applied to the drain and/or source of the receiving terminal switch-1 130. Blocking capacitor-2 (Cb2) is used for high bias.
또한, 수신단 스위치-1(130)에는 인덕터-2(L2)가 연결된다. 구체적으로, 인덕터-2(L2)의 일단은 수신단 스위치-1(130)의 드레인에 연결되고, 타단은 수신단 스위치-1(130)의 소스에 연결된다.In addition, the inductor-2 (L2) is connected to the receiving terminal switch-1 (130). Specifically, one end of the inductor-2 (L2) is connected to the drain of the receiving end switch-1 130, and the other end is connected to the source of the receiving end switch-1 130.
제어기(150)는 통신 모드에 따라, 송신단 스위치-1(110), 송신단 스위치-2(120), 수신단 스위치-1(130) 및 수신단 스위치-2(140)의 스위칭 동작을 제어한다.The controller 150 controls the switching operation of the transmitting end switch-1 110, the transmitting end switch-2 120, the receiving end switch-1 130, and the receiving end switch-2 140 according to the communication mode.
구체적으로, 송신 모드에서는 송신단 스위치-1(110)과 수신단 스위치-2(140)이 턴 온 되고, 송신단 스위치-2(120)와 수신단 스위치-1(130)은 턴 오프 된다.Specifically, in the transmission mode, the transmitting end switch-1 110 and the receiving end switch-2 140 are turned on, and the transmitting end switch-2 120 and the receiving end switch-1 130 are turned off.
반면, 수신 모드에서는 수신단 스위치-1(130)과 송신단 스위치-2(120)이 턴 온 되고, 수신단 스위치-2(140)와 송신단 스위치-1(110)은 턴 오프 된다.On the other hand, in the receiving mode, the receiving end switch-1 130 and the transmitting end switch-2 120 are turned on, and the receiving end switch-2 140 and the transmitting end switch-1 110 are turned off.
또한, 제어기(150)는 송신단 스위치-1(110)의 Body 전압과 송신단 스위치-2(120)의 Body 전압을 제어한다.In addition, the controller 150 controls the body voltage of the switch 1 110 of the transmitting end and the body voltage of the switch 2 120 of the transmitting end.
구체적으로, 제어기(150)는, 송신단 스위치-1(110)을 턴 온 시키는 송신 모드에서는, 송신단 스위치-1(110)의 Body 전압이 바이어스 전압(VB) 보다 높아지도록 제어한다. 송신단 스위치-1(110)의 on 저항을 줄여 결과적으로 삽입 손실을 줄이기 위함이다.Specifically, the controller 150 controls the body voltage of the transmitting end switch-1 110 to be higher than the bias voltage VB in the transmitting mode in which the transmitting end switch-1 110 is turned on. This is to reduce the on resistance of the transmitter-end switch-1 110 and consequently to reduce insertion loss.
또한, 송신 모드에서, 제어기(150)는 수신단 스위치-1(130)의 Body 전압이 바이어스 전압(VB) 보다 낮아지도록 제어한다. 고출력 신호가 스위칭 될 때 turn off 되어있는 수신단 스위치-1(130)의 diode가 켜지지 않도록 하기 위함이다.In addition, in the transmission mode, the controller 150 controls the body voltage of the receiving end switch-1 130 to be lower than the bias voltage VB. This is to prevent the diode of the receiving terminal switch-1 130 that is turned off when the high output signal is switched on.
한편, 제어기(150)는, 수신단 스위치-1(130)을 턴 온 시키는 수신 모드에서는, 수신단 스위치-1(130)의 Body 전압이 바이어스 전압(VB) 보다 높아지도록 제어한다. 수신단 스위치-1(130)의 on 저항을 줄여 결과적으로 삽입 손실을 줄이기 위함이다.On the other hand, the controller 150 controls the body voltage of the receiving terminal switch-1 130 to be higher than the bias voltage VB in the receiving mode in which the receiving terminal switch-1 130 is turned on. This is to reduce the on resistance of the receiving end switch-1 130, thereby reducing insertion loss.
또한, 수신 모드에서, 제어기(150)는 송신단 스위치-1(110)의 Body 전압이 바이어스 전압(VB) 보다 낮아지도록 제어한다. 고출력 신호가 스위칭 될 때 turn off 되어있는 송신단 스위치-1(130)의 diode가 켜지지 않도록 하기 위함이다.In addition, in the receiving mode, the controller 150 controls the body voltage of the switch 1 110 of the transmitting end to be lower than the bias voltage VB. This is to prevent the diode of the transmitter 1 switch 130 from being turned off when the high output signal is switched on.
도 11은 기존 스위치와 본 발명의 일 실시예에 따른 고출력 스위치의 성능 비교 결과를 나타낸 도면이다. 11 is a view showing a result of comparing the performance of a conventional switch and a high-power switch according to an embodiment of the present invention.
도 11은 기존 스위치와 본 발명의 일 실시예에 따른 고출력 스위치의 성능 비교 결과를 나타낸 도면이다. 본 발명의 실시예에 따른 고출력 스위치(도 10)의 삽입손실은 도 7의 저삽입 손실 구조와 동일하며, 신호는 10배(10dB) 이상 큰 신호를 스위칭 할 수 있음을 확인할 수 있다.11 is a view showing the performance comparison result of a high-power switch according to an embodiment of the present invention and the existing switch. It can be seen that the insertion loss of the high-power switch (FIG. 10) according to the embodiment of the present invention is the same as the low-insertion loss structure of FIG. 7, and the signal can be switched over 10 times (10 dB).
또한, 본 발명의 실시예에 따른 구조의 안테나 matching을 Lmatch 병렬 인덕터로 구현할 수 있어 출력 ESD에도 효과적일 것임을 예상할 수 있다.In addition, the antenna matching of the structure according to the embodiment of the present invention can be implemented as an Lmatch parallel inductor, so it can be expected that it will be effective for output ESD.
지금까지, 밀리미터웨이브 고출력 스위치에 대해 바람직한 실시예를 들어 상세히 설명하였다.So far, a preferred embodiment of the millimeter wave high power switch has been described in detail.
본 발명의 실시예에서는, 밀리미터웨이브 주파수를 사용하여 TTD 통신 시스템을 구축하는 경우 또는 밀리미터주파수 대역의 많은 송수신기를 집적화해야하는 모듈 개발에 있어서, 낮은 삽입손실과 높은 파워 capability를 제공함으로써 밀리미터 고속 통신시스템의 활성화에 적용될 핵심 구조를 제시하였다.In an embodiment of the present invention, in the case of constructing a TTD communication system using a millimeter wave frequency or in the development of a module in which a large number of transceivers in the millimeter frequency band are integrated, a low insertion loss and high power capability are provided, thereby providing a high-speed communication system. It suggested the core structure to be applied for activation.
본 발명의 실시예에 따르면, 밀리미터 스위치를 설계함에 있어 낮은 삽입 손실을 가지면서 동시에 높은 출력에서 견딜수 있는 구조를 제안 함으로써 향후 밀리미터웨이브 통신 시스템 성능 향상에 도움을 줄 있다.According to an embodiment of the present invention, by designing a structure capable of withstanding high output while having low insertion loss in designing a millimeter switch, it can help to improve the performance of the millimeter wave communication system in the future.
본 발명의 실시예가 속하는 기술 분야는 이동통신 부품, 모듈 및 시스템에 관련된 기술로써 차세대 이동통신으로 준비 중인 5G 이동통신 Front End module에 활용가능성이 높다. 또한 밀리미터웨이브 TTD 통신 스위치로 높은 활용가치가 있다.The technical field to which the embodiment of the present invention belongs is a technology related to mobile communication parts, modules, and systems, and is highly applicable to a 5G mobile communication front end module being prepared as a next generation mobile communication. In addition, it has high utilization value as a millimeter wave TTD communication switch.
또한, 이상에서는 본 발명의 바람직한 실시예에 대하여 도시하고 설명하였지만, 본 발명은 상술한 특정의 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진자에 의해 다양한 변형실시가 가능한 것은 물론이고, 이러한 변형실시들은 본 발명의 기술적 사상이나 전망으로부터 개별적으로 이해되어져서는 안될 것이다.In addition, although the preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the specific embodiments described above, and the technical field to which the present invention pertains without departing from the gist of the present invention claimed in the claims. In addition, various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical idea or prospect of the present invention.
Claims (8)
- 송신단과 안테나 간의 전기적 연결을 스위칭하는 제1 송신단 스위치;A first transmitting end switch for switching an electrical connection between the transmitting end and the antenna;송신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 송신단 스위치;A second transmitting end switch for switching an electrical connection between the transmitting end and ground;수신단과 안테나 간의 전기적 연결을 스위칭하는 제1 수신단 스위치;A first receiving end switch for switching an electrical connection between the receiving end and the antenna;수신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 수신단 스위치;A second receiving end switch for switching an electrical connection between the receiving end and ground;제1 송신단 스위치, 제2 송신단 스위치, 제1 수신단 스위치 및 제2 수신단 스위치의 스위칭 동작을 제어하고, 제1 송신단 스위치의 Body 전압과 제2 송신단 스위치의 Body 전압을 제어하는 제어기;를 포함하는 것을 특징으로 하는 고출력 스위치.It includes a controller for controlling the switching operation of the first transmitting end switch, the second transmitting end switch, the first receiving end switch and the second receiving end switch, and the body voltage of the first transmitting end switch and the body voltage of the second transmitting end switch; Features high power switch.
- 청구항 1에 있어서,The method according to claim 1,제1 송신단 스위치의 드레인 또는 소스에는 바이어스 전압이 인가되고,A bias voltage is applied to the drain or source of the first transmission terminal switch,제어기는,The controller,제1 송신단 스위치를 턴 온 시키면, 제1 송신단 스위치의 Body 전압이 바이어스 전압 보다 높아지도록 제어하는 것을 특징으로 하는 고출력 스위치.When the first transmitting end switch is turned on, the high output switch characterized in that the body voltage of the first transmitting end switch is controlled to be higher than the bias voltage.
- 청구항 2에 있어서,The method according to claim 2,제어기는,The controller,제1 송신단 스위치를 턴 오프 시키면, 제1 송신단 스위치의 Body 전압이 바이어스 전압 보다 낮아지도록 제어하는 것을 특징으로 하는 고출력 스위치.When the first transmitting end switch is turned off, the high output switch characterized in that the body voltage of the first transmitting end switch is controlled to be lower than the bias voltage.
- 청구항 2에 있어서,The method according to claim 2,제2 수신단 스위치의 드레인 또는 소스에는 바이어스 전원이 인가되며,A bias power is applied to the drain or source of the second receiving end switch,제어기는,The controller,제1 수신단 스위치를 턴 온 시키면, 제1 수신단 스위치의 Body 전압이 바이어스 전압 보다 높아지도록 제어하는 것을 특징으로 하는 고출력 스위치.When the first receiving end switch is turned on, a high output switch characterized in that the body voltage of the first receiving end switch is controlled to be higher than the bias voltage.
- 청구항 4에 있어서,The method according to claim 4,제어기는,The controller,제1 수신단 스위치를 턴 오프 시키면, 제1 수신단 스위치의 Body 전압이 바이어스 전압 보다 낮아지도록 제어하는 것을 특징으로 하는 고출력 스위치.When the first receiving end switch is turned off, a high output switch characterized in that the body voltage of the first receiving end switch is controlled to be lower than the bias voltage.
- 청구항 4에 있어서,The method according to claim 4,바이어스 전원은,The bias power source,1V 이상인 것을 특징으로 하는 고출력 스위치.High power switch, characterized in that 1V or more.
- 청구항 1에 있어서,The method according to claim 1,일단이 제1 송신단 스위치의 드레인에 연결되고, 타단이 제1 송신단 스위치의 소스에 연결된 제1 인덕터; 및A first inductor having one end connected to the drain of the first transmission end switch and the other end connected to the source of the first transmission end switch; And일단이 제1 수신단 스위치의 드레인에 연결되고, 타단이 제1 수신단 스위치의 소스에 연결된 제2 인덕터;를 더 포함하는 것을 특징으로 하는 고출력 스위치.And a second inductor having one end connected to the drain of the first receiving end switch and the other end connected to the source of the first receiving end switch.
- 송신단과 안테나 간의 전기적 연결을 스위칭하는 제1 송신단 스위치, 송신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 송신단 스위치, 수신단과 안테나 간의 전기적 연결을 스위칭하는 제1 수신단 스위치 및 수신단과 그라운드 간의 전기적 연결을 스위칭하는 제2 수신단 스위치의 스위칭 동작을 제어하는 단계;A first transmitting end switch that switches the electrical connection between the transmitting end and the antenna, a second transmitting end switch that switches the electrical connection between the transmitting end and the ground, a first receiving end switch that switches the electrical connection between the receiving end and the antenna, and a switching electrical connection between the receiving end and the ground. Controlling a switching operation of the second receiving end switch;제1 송신단 스위치의 Body 전압과 제2 송신단 스위치의 Body 전압을 제어하는 단계;를 포함하는 것을 특징으로 하는 고출력 스위칭 방법.And controlling the body voltage of the first transmitting end switch and the body voltage of the second transmitting end switch.
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KR20070102560A (en) * | 2005-08-26 | 2007-10-18 | 가부시키가이샤 무라타 세이사쿠쇼 | High frequency switch |
KR20120067275A (en) * | 2010-12-15 | 2012-06-25 | 삼성전기주식회사 | High frequency switch |
KR101208175B1 (en) * | 2007-09-14 | 2012-12-04 | 삼성전기주식회사 | High power complementary metal oxide semiconductor (cmos) antenna switches using body switchting and external component in multistacking structure |
KR101520580B1 (en) * | 2014-03-31 | 2015-05-15 | 중앙대학교 산학협력단 | LDMOS RF switch using power redistribution capacitor and Communication device using the same |
KR20160084984A (en) * | 2015-01-07 | 2016-07-15 | 삼성전기주식회사 | High frequency switch |
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- 2018-12-17 WO PCT/KR2018/015979 patent/WO2020130161A1/en active Application Filing
- 2018-12-17 KR KR1020180162776A patent/KR20200074419A/en unknown
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KR20070102560A (en) * | 2005-08-26 | 2007-10-18 | 가부시키가이샤 무라타 세이사쿠쇼 | High frequency switch |
KR101208175B1 (en) * | 2007-09-14 | 2012-12-04 | 삼성전기주식회사 | High power complementary metal oxide semiconductor (cmos) antenna switches using body switchting and external component in multistacking structure |
KR20120067275A (en) * | 2010-12-15 | 2012-06-25 | 삼성전기주식회사 | High frequency switch |
KR101520580B1 (en) * | 2014-03-31 | 2015-05-15 | 중앙대학교 산학협력단 | LDMOS RF switch using power redistribution capacitor and Communication device using the same |
KR20160084984A (en) * | 2015-01-07 | 2016-07-15 | 삼성전기주식회사 | High frequency switch |
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