WO2020125664A1 - 多通道发射机射频前端结构和终端以及无线通信设备 - Google Patents

多通道发射机射频前端结构和终端以及无线通信设备 Download PDF

Info

Publication number
WO2020125664A1
WO2020125664A1 PCT/CN2019/126240 CN2019126240W WO2020125664A1 WO 2020125664 A1 WO2020125664 A1 WO 2020125664A1 CN 2019126240 W CN2019126240 W CN 2019126240W WO 2020125664 A1 WO2020125664 A1 WO 2020125664A1
Authority
WO
WIPO (PCT)
Prior art keywords
duplexer
radio frequency
channel transmitter
series
resonant network
Prior art date
Application number
PCT/CN2019/126240
Other languages
English (en)
French (fr)
Inventor
庞慰
蔡华林
Original Assignee
天津大学
诺思(天津)微***有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天津大学, 诺思(天津)微***有限责任公司 filed Critical 天津大学
Priority to EP19899772.8A priority Critical patent/EP3902144A4/en
Publication of WO2020125664A1 publication Critical patent/WO2020125664A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0483—Transmitters with multiple parallel paths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers

Definitions

  • the invention relates to the field of semiconductors and micro-electromechanical systems, in particular to a multi-channel transmitter RF front-end structure and terminal, and wireless communication equipment.
  • Radio frequency devices have gradually developed into multi-channel multi-mode radio frequency modules.
  • PAMiD Power Amplifier Modules integrated Duplexer
  • PA modules and filters are packaged together in one module, can reduce the performance degradation caused by the multiple modules.
  • the reduction of the total packaging steps also greatly reduces costs. Therefore, this radio frequency solution is more and more widely used in terminal equipment.
  • the present invention provides a multi-channel transmitter RF front-end structure and terminal, and a wireless communication device.
  • passive resonance an equivalent low impedance is generated in the frequency band of other channels, which can eliminate the leakage signal. The effect is therefore increased isolation.
  • a negative capacitance effect can be generated in a specific frequency band, so that parasitic capacitance can be eliminated, thereby removing matching inductance.
  • a multi-channel transmitter RF front-end structure including:
  • the radio-frequency duplexer is connected between the two-way power amplifier and the antenna end
  • the resonant network is a series resonant network and is connected between the two-way power amplifier and Between the antenna ends, the equivalent circuit of the series resonant network is a series-connected grounding capacitor between the two inductors.
  • the radio frequency signal is transmitted to the radio frequency duplexer through a radio frequency channel and then emitted by the antenna, and the weak radio frequency signal leaking to other radio frequency channels will be absorbed by the resonant network conducted to ground This can effectively improve the isolation between channels.
  • the two input terminals of the antenna end and the RF duplexer itself need matching inductance.
  • the resonance network of the present invention can also cancel out the parasitic capacitance, thereby eliminating additional matching inductance. Therefore, when the RF signal of one channel of the multi-channel power amplifier leaks to another channel, it can flow to the ground through the low impedance generated by the resonance network at a specific frequency, thereby improving the suppression of signal leakage and improving the isolation.
  • the series resonance network is connected between two power amplifiers and a radio frequency duplexer.
  • series resonance network is connected between the radio frequency duplexer and the antenna end.
  • one group of the series resonance network is connected between the two-way power amplifier and the RF duplexer, and the other group is connected between the RF duplexer and the antenna end.
  • another RF front-end structure for a multi-channel transmitter including:
  • the radio-frequency duplexer is connected between the two-way power amplifier and the antenna end
  • the resonant network is a parallel resonant network and is connected in series between the two-way power amplifier and
  • the equivalent circuit of the parallel resonant network is a capacitor in parallel with an inductor.
  • the working principle of the circuit diagram is as follows: when a power amplifier transmits power to a certain RF channel, the RF signal is transmitted to the RF duplexer through a certain RF channel and then emitted by the antenna, while the weak RF signal leaking to other RF channels passes through parallel resonance High impedance is generated to suppress signals at the resonance frequency of each branch, thereby improving the suppression of signal leakage and improving isolation.
  • the radio frequency duplexer (Duplexer) is composed of two sets of parallel filters.
  • the filter is composed of a four-stage series resonator and a three-stage parallel resonator. Both ends of the parallel resonator are connected in parallel at Between the connection point group of two series resonators and a ground terminal.
  • a multi-channel terminal including,
  • the baseband unit is used to process the received I/Q signals and provide I/Q signals for the transmission path.
  • the baseband unit supports GSM, TD-SCDMA, FDD-LTE, and TDD-LTE standards.
  • the radio frequency unit including the multi-channel transmitter radio frequency front-end structure, is used to support the reception and transmission of radio frequency signals in various frequency bands of GSM, TD-SCDMA, FDD-LTE, and TDD-LTE standards.
  • radio frequency unit specifically includes:
  • Radio frequency transceiver chip used to support the reception and transmission of radio frequency signals in various frequency bands of GSM, TD-SCDMA and LTE;
  • PA Power amplifier
  • SW Resonant network (SW), used to introduce the leakage signal of the power amplifier (PA) to the ground at a specific frequency;
  • the radio frequency duplexer (Duplexer) is used for the isolation of the transmission path and the reception path of each frequency band of GSM radio frequency signal, TD-SCDMA radio frequency signal, FDD-LTE radio frequency signal, and TDD-LTE radio frequency signal.
  • a wireless communication device including the above multi-channel terminal is provided.
  • the RF front-end structure of the multi-channel transmitter proposed in this application when the RF signal of one channel of the multi-channel power amplifier leaks to another channel, the low impedance generated at a specific frequency through the resonant network can flow to the ground, thereby The suppression of signal leakage is improved, and the channel isolation is improved.
  • the two input terminals of the antenna end and the RF duplexer need to match the inductance themselves.
  • the use of the resonance network of the present invention can also offset the parasitic capacitance. Thereby eliminating additional matching inductance.
  • FIG. 1 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 1 of the present application.
  • FIG. 2 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 2 of the present application.
  • FIG. 3 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 3 of the present application.
  • Embodiment 4 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 4 of the present application.
  • FIG. 5 is a radio frequency front-end structure of an n-channel transmitter according to Embodiment 5 of the present application.
  • Fig. 6 is the characteristic curve of the resonant network in the RF front-end structure of the dual-channel transmitter.
  • FIG. 8 is a filter matching method of Embodiment 1 of the present application.
  • Figure 10 is the filter transmission curve of the Duplexer+PA structure of B39+41N and the LC structure of this patent.
  • Fig. 11 is the filter transmission curve of the Duplexer+PA structure of B39N and the LC structure of this patent.
  • Fig. 12 is the filter transmission curve of the Duplexer+PA structure of B41N and the LC structure of this patent.
  • Fig. 13 is the isolation curve of the two channels of the Duplexer+PA structure of B39+41N and the LC structure of this patent.
  • Fig. 14 shows the suppression curve of the Duplexer+PA structure of B39+41N and the LC structure of this patent set to the GPS frequency band to improve the specific frequency.
  • FIG. 1 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 1 of the present application.
  • the RF front-end structure of a dual-channel transmitter includes:
  • the radio-frequency duplexer is connected between the two-way power amplifier (PA) and the antenna terminal ( Ant)
  • the resonant network is a series resonant network and is connected between two power amplifiers (PA) and a radio frequency duplexer (Duplexer)
  • the equivalent circuit of the series resonant network is between two inductors Connect a ground capacitor in series.
  • the two ends of the series resonant network are respectively connected between two sets of power amplifiers (PA) and radio frequency duplexers (Duplexer).
  • the grounding capacitance can be realized through the substrate, PCB or discrete devices.
  • the two inductors form a series resonance.
  • the branch can improve the suppression and isolation of the two channels respectively.
  • a radio frequency duplexer (Duplexer) is composed of two sets of parallel filters.
  • the filter is composed of a four-stage series resonator and a three-stage parallel resonator. Both ends of the parallel resonator are connected in parallel to two series resonators. Between the connection point group and a ground terminal.
  • a matching circuit is connected in series between the two power amplifiers and the RF duplexer, as shown in the matching circuit 131 and the matching circuit 132 in the figure (the matching circuit in other figures is marked as Maching Network ).
  • the matching circuit can be a T-type, Pi-type or L-type passive device, its role is to perform impedance matching between the power amplifier and the RF duplexer, because for the power amplifier, it has an optimal impedance, but for the RF For the duplexer, it generally cannot provide this optimal impedance. Therefore, a matching network needs to be added to ensure that the power amplifier works in the best state, and the signal can be effectively transmitted to the next stage.
  • FIG. 2 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 2 of the present application.
  • the RF front-end structure of the dual-channel transmitter includes:
  • the radio-frequency duplexer Duplexer
  • the resonant network is a series resonant network and is connected between the RF duplexer (Duplexer) and the antenna terminal (Ant)
  • the equivalent circuit of the series resonant network is a series connection between two inductors Ground capacitance.
  • a radio frequency duplexer (Duplexer) is composed of two sets of parallel filters.
  • the filter is composed of a four-stage series resonator and a three-stage parallel resonator. Both ends of the parallel resonator are connected in parallel to two series resonators. Between the connection point group and a ground terminal.
  • FIG. 3 is a structure of a radio frequency front end of a dual-channel transmitter according to Embodiment 3 of the present application.
  • the dual-channel transmitter RF front-end structure includes:
  • the radio-frequency duplexer is connected between the two-way power amplifier (PA) and the antenna terminal ( Ant)
  • the resonant network is two sets of series resonant networks, one of the two sets of series resonant network is connected between the two-way power amplifier (PA) and the radio frequency duplexer (Duplexer), the other is connected to the radio frequency
  • the equivalent circuit of the series resonant network is a series-connected grounding capacitor between the two inductors.
  • a radio frequency duplexer (Duplexer) is composed of two sets of parallel filters.
  • the filter is composed of a four-stage series resonator and a three-stage parallel resonator. Both ends of the parallel resonator are connected in parallel to two series resonators. Between the connection point group and a ground terminal.
  • the RF front-end structure of the dual-channel transmitter includes:
  • the radio-frequency duplexer is connected between the two-way power amplifier (PA) and the antenna terminal ( Ant)
  • the resonant network is a parallel resonant network and is connected in series between two power amplifiers (PA) and a radio frequency duplexer (Duplexer).
  • the equivalent circuit of the parallel resonant network is a capacitor in parallel with an inductor .
  • the two ends of the series resonant network are respectively between the power amplifier (PA) and the RF duplexer (Duplexer).
  • the RF duplexer (Duplexer) is composed of two sets of parallel filters, and the filter is composed of four stages A series resonator and a three-stage parallel resonator are formed, and two ends of the parallel resonator are respectively connected in parallel between a connection point group of two series resonators and a ground terminal.
  • FIG. 5 is a radio frequency front-end structure of an n-channel transmitter according to Embodiment 5 of the present application.
  • the n-channel transmitter RF front-end structure includes:
  • each group of RF duplexer (Duplexer) is connected to each power amplifier (PA)
  • PA power amplifier
  • the resonant network (SW) is two sets of series resonant networks. One of the two sets of series resonant networks is connected between two power amplifiers (PA) and a radio frequency duplexer (Duplexer). One is connected between the radio frequency duplexer (Duplexer) and the antenna terminal (Ant), and a grounding resistance is drawn between each power amplifier (PA) and the series resonance network, where n is greater than or equal to 2.
  • n-channel transmitter RF front-end structure has multiple reception and transmission paths and switches, and only the transmission path is shown in FIG. 5.
  • the dual-channel and n-channel transmitter RF front-end structure when the power amplifier transmits power to a certain RF channel, the RF signal is transmitted to the RF duplexer through a certain RF channel and then emitted by the antenna, and leaks to The weak RF signals of other RF channels will be absorbed by the resonant network connected to ground, which can effectively improve the isolation between the channels.
  • the two input terminals of the antenna end and the RF duplexer itself need matching inductance.
  • the resonance network of the present invention can also cancel out the parasitic capacitance, thereby eliminating additional matching inductance. Therefore, when the RF signal of one channel of the multi-channel power amplifier leaks to another channel, it can flow to the ground through the low impedance generated by the resonance network at a specific frequency, thereby improving the suppression of signal leakage and improving the isolation.
  • This application also provides a multi-channel terminal, including,
  • the baseband unit is used to process the received I/Q signals and provide I/Q signals for the transmission path.
  • the baseband unit supports GSM, TD-SCDMA, FDD-LTE, and TDD-LTE standards.
  • the radio frequency unit including the multi-channel transmitter radio frequency front-end structure, is used to support the reception and transmission of radio frequency signals in various frequency bands of GSM, TD-SCDMA, FDD-LTE, and TDD-LTE standards.
  • the radio frequency unit specifically includes:
  • Radio frequency transceiver chip used to support the reception and transmission of radio frequency signals in various frequency bands of GSM, TD-SCDMA and LTE;
  • PA Power amplifier
  • SW Resonant network (SW), used to introduce the leakage signal of the power amplifier (PA) to the ground at a specific frequency;
  • the radio frequency duplexer (Duplexer) is used for the isolation of the transmission path and the reception path of each frequency band of GSM radio frequency signal, TD-SCDMA radio frequency signal, FDD-LTE radio frequency signal, and TDD-LTE radio frequency signal.
  • Figure 6 shows the characteristic curve of the resonant network in the RF front-end structure of the dual-channel transmitter.
  • Fig. 6 keeping the product of the inductance value and capacitance value of the resonant network unchanged, that is, the resonator frequency is unchanged, change the magnitude of the inductance value and capacitance value, and the capacitance values on the left and right sides of the corresponding resonance frequency.
  • the thicker line is that the larger the capacitance is, the smaller the inductance is, and the smaller the capacitance is, the larger the inductance is.
  • the resonance frequency in the LC network of the high-frequency PA channel is at a low frequency, and the larger the capacitance value, the better the capacitance elimination effect for the high-frequency channel, so the capacitance value takes a larger value.
  • the matching inductance of the filter can be cancelled; the resonant frequency in the LC resonant network of the low-frequency PA channel is located at a high frequency, and the smaller the capacitance value, the smaller the impact on the low-frequency channel. The value is smaller.
  • FIG. 7 shows the filter matching method in the prior art.
  • the filter matching method of the prior art is to connect a grounding inductor in parallel on both sides of a radio frequency duplexer (Duplexer).
  • the filter matching method of Embodiment 1 of the present application is to connect a power amplifier (PA) in series at the signal receiving end, and replace the grounding inductance between the power amplifier (PA) and the RF duplexer (Duplexer) with The series inductance and ground capacitance form a resonant network.
  • the added passive resonant network can act as a matching part without adding off-chip originals.
  • FIG. 9 shows the characteristic curve of the filter matching method of the prior art and Embodiment 1 of the present application.
  • the thin line is the matching result of the parallel inductor in FIG. 7 (FIG. 7)
  • the thick line is the matching effect of the structure of FIG. 8 of the patent (FIG. 8).
  • the LC structure of the patent replaces the matching of the original parallel inductors, and the matching effect is similar. Therefore, the LC structure of the present application can not only reduce mutual coupling and signal interference, but also replace the original matching inductors, and passive devices have not increased.
  • Fig. 10 is the filter transmission curve of the Duplexer+PA structure of B39+41N and the LC structure of this patent. Among them, PA gain of B39 and B41N are 15dB.
  • Figure 11 is the filter transmission curve of the Duplexer+PA structure of B39N and the LC structure of this patent
  • Figure 12 is the filter transmission curve of the Duplexer+PA structure of B41N and the LC structure of this patent. It can be seen from Figure 11-12 that the thin line is the transmission curve of the individual filter, and the thick line is the overall effect after adding the PA. The curve ascends upward as a whole, but the suppression around 2.6 GHz in FIG. 11 and around 1.9 GHz in FIG. 12 does not follow the increase, so the suppression is improved compared to before.
  • Fig. 13 shows the isolation curves of the two channels of the Duplexer+PA structure of B39+41N and the LC structure of this patent. It can be seen from Figure 13 that the thin line is the isolation effect of the Duplexer+PA structure of B39+41N, and the thick line is the isolation effect of the two-channel channel of the patented LC structure.
  • the isolation refers to the mutual signal leakage of the two channels, and the isolation of the thick line Is better than the isolation of the thin line.
  • the isolation of the two channels of the LC structure of this patent is improved by 10-15dB.
  • Figure 14 shows the suppression curve of the Duplexer+PA structure of B39+41N and the LC structure of this patent set to the GPS frequency band to improve the specific frequency. It can be seen from Figure 14 that the thin line is the suppression effect curve of the Duplexer+PA structure of B39+41N in the GPS frequency band, and the thick line is the suppression effect curve of the patented LC structure in the GPS frequency band.
  • the frequency band needs better suppression, which can also be achieved by this structure, and the suppression improvement of other frequency bands can also be achieved.
  • the two-way LC structure of this patent is improved by more than 15dB.
  • the disclosed system and method may be implemented in other ways.
  • the device embodiments described above are only schematic.
  • the division of the units is only a logical function division, and there may be other divisions in actual implementation, for example, multiple units or components may be combined or Can be integrated into another system, or some features can be ignored, or not implemented.
  • the displayed or discussed mutual coupling or direct coupling or communication connection may be indirect coupling or communication connection through some interfaces, devices or units, and may be in electrical, mechanical, or other forms.
  • the units described as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units, that is, they may be located in one place, or may be distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
  • each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units may be integrated into one unit.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transmitters (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)

Abstract

本发明提供多通道发射机射频前端结构和终端以及无线通信设备，所述多通道发射机射频前端结构包括：两路功率放大器、射频双工器、谐振网络及天线端，所述射频双工器连接在两路功率放大器与天线端之间，所述谐振网络为串联谐振网络并连接在两路功率放大器与天线端之间，串联谐振网络的等效电路为两个电感之间串联一个接地电容；本申请通过无源谐振的方式，在其他通道的频段上产生等效的低阻抗，对于泄露的信号可以起到消除的效果，因此提高了隔离度。另外通过对无源谐振网络的参数设置，可以在特定频段产生负电容的效果，从而可以消除寄生电容，从而去除匹配电感。

Description

多通道发射机射频前端结构和终端以及无线通信设备 技术领域
本发明涉及半导体及微机电***领域，特别是涉及多通道发射机射频前端结构和终端以及无线通信设备。
背景技术
随着通信频段原来越多，载波聚合的应用，分离式多模多频段已经无法满足手机对射频器件的要求。射频器件开始逐渐向多通道多模式的射频模组发展。其中PAMiD(Power Amplifier Modules integrated Duplexer)模块，也就是多PA模块和滤波器共同封装到一个模组里，可以减小多模块分别封装带来的性能恶化。同时，总的封装步骤的减少也大大降低了成本。因此，这种射频方案越来越广泛的应用到终端设备中。
随着射频通信***的逐步发展，对射频前端的性能要求也越来越高。多个PA在同一模组中的会带来相互的干扰问题，从而导致多通道的隔离度恶化，使通信***的性能受到很大的影响。因此，如何改善多通道多频段之间的干扰实现PAMiD模组的抗干扰性是本领域技术人员目前亟需解决的技术问题。
发明内容
有鉴于此，本发明提供多通道发射机射频前端结构和终端以及无线通信设备，通过无源谐振的方式，在其他通道的频段上产生等效的低阻抗，对于泄露的信号可以起到消除的效果，因此提高了隔离度。另外通过对无源谐振网络的参数设置，可以在特定频段产生负电容的效果，从而可以消除寄生电容，从而去除匹配电感。
第一方面，提供一种多通道发射机射频前端结构，包括：
两路功率放大器、射频双工器、谐振网络及天线端，所述射频双工器连接在两路功率放大器与天线端之间，所述谐振网络为串联谐振网络并连接在两路功率放大器与天线端之间，串联谐振网络的等效电路为两个电感之间串联一个接地电容。
该电路图的工作原理如下：
当功率放大器某一射频通道发射功率时，射频信号通过某一射频通道传递到射频双工器后由天线发射出去，而泄漏至其他射频通道的微弱射频信号会由导通到地的谐振网络吸收从而能有效的提高通道间的隔离度。此时天线端和射频双工器两个输入端由于寄生电容的引入，本身需要匹配电感，采用本发明的谐振网络还可以抵消寄生电容，从而消除额外的匹配电感。因此，多通道功率放大器的某一通道的射频信号泄露到另一通道时，可以通过谐振网络在特定频率产生的低阻抗流到地上，从而提高了信号泄露的抑制作用，改善了隔离度。
进一步地，所述串联谐振网络连接在两路功率放大器与射频双工器之间。
进一步地，所述串联谐振网络连接在射频双工器与天线端之间。
进一步地，所述串联谐振网络一组连接在两路功率放大器与射频双工器之间，另一组连接在射频双工器与天线端之间。
第二方面，提供另一种多通道发射机射频前端结构，包括：
两路功率放大器、射频双工器、谐振网络及天线端，所述射频双工器连接在两路功率放大器与天线端之间，所述谐振网络为并联谐振网络并串联在两路功率放大器与射频双工器之间，并联谐振网络的等效电路为一个电容并联一个电感。
该电路图的工作原理如下：当功率放大器某一射频通道发射功率时，射频信号通过某一射频通道传递到射频双工器后由天线发射出去，而泄漏至其他射频通道的微弱射频信号通过并联谐振产生高阻抗，来 抑制各自支路谐振频点的信号，从而提高了信号泄露的抑制作用，改善了隔离度。
进一步地，所述射频双工器(Duplexer)由两组并联滤波器组成，所述滤波器由四级串联谐振器和三级并联谐振器构成，所述并联谐振器的两端分别并联连接在两个串联谐振器的连接点组以及一个接地端之间。
第三方面，提供一种多通道终端，包括，
基带单元，用于处理接收到I/Q信号，并且为发射通路提供I/Q信号，该基带单元支持GSM、TD-SCDMA、FDD-LTE和TDD-LTE制式。
射频单元，包括多通道发射机射频前端结构，用于支持GSM、TD-SCDMA、FDD-LTE和TDD-LTE制式各个频段射频信号的接收和发射。
进一步地，射频单元具体包括：
射频收发芯片，用于支持GSM、TD-SCDMA和LTE各个频段射频信号的接收和发射；
功率放大器(PA)，用于放大GSM射频信号、TD-SCDMA射频信号、FDD-LTE射频信号、TDD-LTE射频信号；
谐振网络(SW)，用于在特定频率将功率放大器(PA)的泄露信号导入到地上；
射频双工器(Duplexer)，用于GSM射频信号、TD-SCDMA射频信号、FDD-LTE射频信号、TDD-LTE射频信号各个频段的发射通路和接收通路的隔离。
第四方面，提供包含上述多通道终端的无线通信设备。
因此，本申请提出了的多通道发射机射频前端结构，在多通道功率放大器的某一通道的射频信号泄露到另一通道时，可以通过谐振网络在特定频率产生的低阻抗流到地上，从而提高了信号泄露的抑制作用，改善了通道隔离度；同时，天线端和射频双工器两个输入端由于寄生电容的引入，本身需要匹配电感，采用本发明的谐振网络还可以 抵消寄生电容，从而消除额外的匹配电感。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是本申请实施例1的双通道发射机射频前端结构。
图2是本申请实施例2的双通道发射机射频前端结构。
图3是本申请实施例3的双通道发射机射频前端结构。
图4是本申请实施例4的双通道发射机射频前端结构。
图5是本申请实施例5的n通道发射机射频前端结构。
图6是双通道发射机射频前端结构中谐振网络的特性曲线。
图7是现有技术中滤波器匹配方式。
图8是本申请实施例1的滤波器匹配方式。
图9是现有技术和本申请实施例1的滤波器匹配方式的特性曲线。
图10是B39+41N的Duplexer+PA结构与本专利LC结构的滤波器传输曲线。
图11是B39 N的Duplexer+PA结构与本专利LC结构的滤波器传输曲线。
图12是B41 N的Duplexer+PA结构与本专利LC结构的的滤波器传输曲线。
图13是B39+41N的Duplexer+PA结构与本专利LC结构两路通道隔离度曲线。
图14是B39+41N的Duplexer+PA结构与本专利LC结构谐振频率设置到GPS频段改善特定频率的抑制曲线。
具体实施方式
为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例， 而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
实施例1
图1是本申请实施例1的双通道发射机射频前端结构。如图1所示，双通道发射机射频前端结构包括：
两路功率放大器(PA)、射频双工器(Duplexer)、谐振网络(SW)及天线端(Ant)，所述射频双工器(Duplexer)连接在两路功率放大器(PA)与天线端(Ant)之间，所述谐振网络(SW)为串联谐振网络并连接在两路功率放大器(PA)与射频双工器(Duplexer)之间，串联谐振网络的等效电路为两个电感之间串联一个接地电容。
具体的，串联谐振网络的两端分别连接在两组功率放大器(PA)与射频双工器(Duplexer)之间，接地电容可通过基板、PCB或分立器件实现，两个电感组成串联谐振，两支路可以分别改善两个通道的抑制和隔离度。射频双工器(Duplexer)由两组并联滤波器组成，所述滤波器由四级串联谐振器和三级并联谐振器构成，所述并联谐振器的两端分别并联连接在两个串联谐振器的连接点组以及一个接地端之间。
此外，双通道发射机射频前端中，在两路功率放大器和射频双工器之间串联有匹配电路，如图中的匹配电路131、匹配电路132所示(其他图中匹配电路标为Maching Network)。匹配电路可为T型，Pi型或者L型无源器件，其作用是在功率放大器和射频双工器之间进行阻抗匹配，因为对于功率放大器来说，它有一个最优阻抗，但对于射频双工器来说，它一般不能提供这个最优阻抗，因此中间需要加入匹配网络来保证功率放大器工作在最佳状态，同时信号能有效的传输到下一级。
实施例2
图2是本申请实施例2的双通道发射机射频前端结构。如图2所示，双通道发射机射频前端结构包括：
两路功率放大器(PA)、射频双工器(Duplexer)、谐振网络(SW)及天线端(Ant)，所述射频双工器(Duplexer)连接在两路功率放大器(PA)与天线端(Ant)之间，所述谐振网络(SW)为串联谐振网络并连接在射频双工器(Duplexer)与天线端(Ant)之间，串联谐振网络的等效电路为两个电感之间串联一个接地电容。
具体的，串联谐振网络的两端分别连接在射频双工器(Duplexer)与天线端(Ant)之间，接地电容可通过基板、PCB或分立器件实现，两个电感组成串联谐振，两支路可以分别改善两个通道的抑制和隔离度。射频双工器(Duplexer)由两组并联滤波器组成，所述滤波器由四级串联谐振器和三级并联谐振器构成，所述并联谐振器的两端分别并联连接在两个串联谐振器的连接点组以及一个接地端之间。
实施例3
图3是本申请实施例3的双通道发射机射频前端结构。如图3所示，双通道发射机射频前端结构包括：
两路功率放大器(PA)、射频双工器(Duplexer)、谐振网络(SW)及天线端(Ant)，所述射频双工器(Duplexer)连接在两路功率放大器(PA)与天线端(Ant)之间，所述谐振网络(SW)为2组串联谐振网络，2组串联谐振网络一个连接在两路功率放大器(PA)与射频双工器(Duplexer)之间，另一个连接在射频双工器(Duplexer)与天线端(Ant)之间，串联谐振网络的等效电路为两个电感之间串联一个接地电容。
具体的，2组串联谐振网络，一组串联谐振网络的两端分别连接在两路功率放大器(PA)与射频双工器(Duplexer)之间，另一组串联谐振网络的两端分别连接在射频双工器(Duplexer)与天线端(Ant)之间。接地电容可通过基板、PCB或分立器件实现，两个电感组成串联谐振，两支路可以分别改善两个通道的抑制和隔离度。射频双工器(Duplexer)由两组并联滤波器组成，所述滤波器由四级串联谐振器和三级并联谐振器构成，所述并联谐振器的两端分别并联连接在两个串联谐振器的连接点组以及一个接地端之间。
实施例4
图4是本申请实施例4的双通道发射机射频前端结构。如图4所示，双通道发射机射频前端结构包括：
两路功率放大器(PA)、射频双工器(Duplexer)、谐振网络(SW)及天线端(Ant)，所述射频双工器(Duplexer)连接在两路功率放大器(PA)与天线端(Ant)之间，所述谐振网络(SW)为并联谐振网络并串联在两路功率放大器(PA)与射频双工器(Duplexer)之间，并联谐振网络的等效电路为一个电容并联一个电感。
具体的，串联谐振网络的两端分别各路功率放大器(PA)与射频双工器(Duplexer)之间，射频双工器(Duplexer)由两组并联滤波器组成，所述滤波器由四级串联谐振器和三级并联谐振器构成，所述并联谐振器的两端分别并联连接在两个串联谐振器的连接点组以及一个接地端之间。
实施例5
图5是本申请实施例5的n通道发射机射频前端结构。如图5所示，n通道发射机射频前端结构包括：
n路功率放大器(PA)、n组射频双工器(Duplexer)、谐振网络(SW)及天线端(Ant)，所述每组射频双工器(Duplexer)连接在每路功率放大器(PA)与天线端(Ant)之间，所述谐振网络(SW)为2组串联谐振网络，2组串联谐振网络一个连接在两路功率放大器(PA)与射频双工器(Duplexer)之间，另一个连接在射频双工器(Duplexer)与天线端(Ant)之间，所述每路功率放大器(PA)与串联谐振网络之间引出接地电阻，其中，n大于等于2。
需要说明的是，n通道发射机射频前端结构有多路接收和发射通路及开关，图5中只示出发射通路。
上述实施例中的双通道、n通道的发射机射频前端结构，当功率放大器某一射频通道发射功率时，射频信号通过某一射频通道传递到射频双工器后由天线发射出去，而泄漏至其他射频通道的微弱射频信号 会由导通到地的谐振网络吸收从而能有效的提高通道间的隔离度。此时天线端和射频双工器两个输入端由于寄生电容的引入，本身需要匹配电感，采用本发明的谐振网络还可以抵消寄生电容，从而消除额外的匹配电感。因此，多通道功率放大器的某一通道的射频信号泄露到另一通道时，可以通过谐振网络在特定频率产生的低阻抗流到地上，从而提高了信号泄露的抑制作用，改善了隔离度。
实施例6
本申请还提供一种多通道终端，包括，
基带单元，用于处理接收到I/Q信号，并且为发射通路提供I/Q信号，该基带单元支持GSM、TD-SCDMA、FDD-LTE和TDD-LTE制式。
射频单元，包括多通道发射机射频前端结构，用于支持GSM、TD-SCDMA、FDD-LTE和TDD-LTE制式各个频段射频信号的接收和发射。
所述射频单元具体包括：
射频收发芯片，用于支持GSM、TD-SCDMA和LTE各个频段射频信号的接收和发射；
功率放大器(PA)，用于放大GSM射频信号、TD-SCDMA射频信号、FDD-LTE射频信号、TDD-LTE射频信号；
谐振网络(SW)，用于在特定频率将功率放大器(PA)的泄露信号导入到地上；
射频双工器(Duplexer)，用于GSM射频信号、TD-SCDMA射频信号、FDD-LTE射频信号、TDD-LTE射频信号各个频段的发射通路和接收通路的隔离。
图6示出了双通道发射机射频前端结构中谐振网络的特性曲线。如图6所示，保持谐振网络的感值、容值的乘积不变，也就是谐振器频率不变，变化感值、容值的大小，对应的谐振频率左侧和右侧的电容值。其中粗线是电容较大电感较小，细线电容较小电感较大。从图中可以看出，对于右侧来说，电容越多，产生的负电容绝对值越大， 随意电容的消除效果越明显，但对于左侧，正电容的绝对值也越大。因此对于双通道结构，高频PA通道的LC网络中谐振频率位于低频，电容值越大，对于高频通道的电容消除效果越好，因此电容值取值较大。当负电容的值完全抵消了寄生电容，就可以取消滤波器的匹配电感；低频PA通道的LC谐振网络中谐振频率位于高频，电容值越小，对于低频通道的影响越小，因此，电容值取值较小。
图7示出了现有技术中滤波器匹配方式。如图7所示，现有技术的滤波器匹配方式为在射频双工器(Duplexer)两侧并联接地电感。如图8所示，本申请实施例1的滤波器匹配方式为在信号接收端串联功率放大器(PA)，并将功率放大器(PA)与射频双工器(Duplexer)之间的接地电感替换为串联的电感与接地电容组成谐振网络。增加的无源谐振网络可以充当匹配部分，不会增加片外原件。
图9示出了现有技术和本申请实施例1的滤波器匹配方式的特性曲线。如图9所示，细线是图7现有技术中并联电感的匹配结果(FIG.7)，粗线是本专利图8结构的匹配效果(FIG.8)。本专利的LC结构取代了原来的并联电感的匹配，匹配效果差不多，因此采用本申请的LC结构不仅可以减小互耦和信号干扰，还可以替代原来的匹配电感，无源器件并没有增加。
图10为B39+41N的Duplexer+PA结构与本专利LC结构的滤波器传输曲线。其中，B39和B41N的PA增益均为15dB。
图11为B39N的Duplexer+PA结构与本专利LC结构的滤波器传输曲线；图12为B41N的Duplexer+PA结构与本专利LC结构的滤波器传输曲线。由图11-12可知，细线是单独的滤波器的传输曲线，粗线为加入PA之后的整体效果。曲线整体往上抬升，但图11的2.6GHz附近和图12的1.9GHz附近的抑制并没有随着抬升，因此抑制相比之前是改善的。
图13为B39+41N的Duplexer+PA结构与本专利LC结构两路通道隔离度曲线。由图13可知，细线是B39+41N的Duplexer+PA结构的 隔离效果，粗线是本专利LC结构两路通道隔离效果，隔离度是指两个通道的相互信号泄露，粗线的隔离度是比细线的隔离度有所改善。相对于现有技术，本专利LC结构两路通道隔离改善10-15dB。
图14为B39+41N的Duplexer+PA结构与本专利LC结构谐振频率设置到GPS频段改善特定频率的抑制曲线。由图14可知，细线是B39+41N的Duplexer+PA结构在GPS频段的抑制效果曲线，粗线是本专利LC结构在GPS频段的抑制效果曲线，抑制改善的位置可以任意调节，比如需要GPS频段需要较好的抑制，也可以通过这种结构来实现，其他频段的抑制改善也可以实现。相对于现有技术，本专利LC结构两路抑制改善了超过15dB。
在本申请所提供的几个实施例中，应该理解到，所揭露的***和方法，可以通过其它的方式实现。例如，以上所描述的装置实施例仅仅是示意性的，例如，所述单元的划分，仅仅为一种逻辑功能划分，实际实现时可以有另外的划分方式，例如多个单元或组件可以结合或者可以集成到另一个***，或一些特征可以忽略，或不执行。另一点，所显示或讨论的相互之间的耦合或直接耦合或通信连接可以是通过一些接口，装置或单元的间接耦合或通信连接，可以是电性，机械或其它的形式。所述作为分离部件说明的单元可以是或者也可以不是物理上分开的，作为单元显示的部件可以是或者也可以不是物理单元，即可以位于一个地方，或者也可以分布到多个网络单元上。可以根据实际的需要选择其中的部分或者全部单元来实现本实施例方案的目的。
另外，在本发明各个实施例中的各功能单元可以集成在一个处理单元中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个单元中。
尽管通过参考附图并结合优选实施例的方式对本发明进行了详细描述，但本发明并不限于此。在不脱离本发明的精神和实质的前提下，本领域普通技术人员可以对本发明的实施例进行各种等效的修改或替换，而这些修改或替换都应在本发明的涵盖范围内/任何熟悉本技术领 域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应所述以权利要求的保护范围为准。

Claims (8)

  1. 一种多通道发射机射频前端结构，其特征在于，包括：
    两路功率放大器、射频双工器、谐振网络及天线端，所述射频双工器连接在两路功率放大器与天线端之间，所述谐振网络为串联谐振网络并连接在两路功率放大器与天线端之间，串联谐振网络的等效电路为两个电感之间串联一个接地电容。
  2. 根据权利要求1所述的多通道发射机射频前端结构，其特征在于，所述串联谐振网络连接在两路功率放大器与射频双工器之间。
  3. 根据权利要求1所述的多通道发射机射频前端结构，其特征在于，所述串联谐振网络连接在射频双工器与天线端之间。
  4. 根据权利要求1所述的多通道发射机射频前端结构，其特征在于，所述串联谐振网络一组连接在两路功率放大器与射频双工器之间，另一组连接在射频双工器与天线端之间。
  5. 一种多通道发射机射频前端结构，其特征在于，包括：
    两路功率放大器、射频双工器、谐振网络及天线端，所述射频双工器连接在两路功率放大器与天线端之间，所述谐振网络为并联谐振网络并串联在两路功率放大器与射频双工器之间，并联谐振网络的等效电路为一个电容并联一个电感。
  6. 根据权利要求1或2所述的多通道发射机射频前端结构，其特征在于，所述射频双工器(Duplexer)由两组并联滤波器组成，所述滤波器由四级串联谐振器和三级并联谐振器构成，所述并联谐振器的两端分别并联连接在两个串联谐振器的连接点组以及一个接地端之间。
  7. 一种包括权利要求1-6任一权利要求所述的多通道发射机射频前端结构的多通道终端，其特征在于，包括，
    基带单元，用于处理接收到I/Q信号，并且为发射通路提供I/Q信号，该基带单元支持GSM、TD-SCDMA、FDD-LTE和TDD-LTE制式。
    射频单元，包括多通道发射机射频前端结构，用于支持GSM、TD-SCDMA、FDD-LTE和TDD-LTE制式各个频段射频信号的接收和发射。
  8. 一种包括权利要求1至7中任一项所述的多通道发射机射频前端结构的无线通信设备。
PCT/CN2019/126240 2018-12-19 2019-12-18 多通道发射机射频前端结构和终端以及无线通信设备 WO2020125664A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP19899772.8A EP3902144A4 (en) 2018-12-19 2019-12-18 RADIO FREQUENCY FRONTEND STRUCTURE FOR MULTICHANNEL TRANSMITTER, TERMINAL AND WIRELESS COMMUNICATION DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811559812.4A CN109547042B (zh) 2018-12-19 2018-12-19 多通道发射机射频前端结构和终端以及无线通信设备
CN201811559812.4 2018-12-19

Publications (1)

Publication Number Publication Date
WO2020125664A1 true WO2020125664A1 (zh) 2020-06-25

Family

ID=65855843

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/126240 WO2020125664A1 (zh) 2018-12-19 2019-12-18 多通道发射机射频前端结构和终端以及无线通信设备

Country Status (3)

Country Link
EP (1) EP3902144A4 (zh)
CN (1) CN109547042B (zh)
WO (1) WO2020125664A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114614771A (zh) * 2022-01-25 2022-06-10 电子科技大学 基于频率连续可调的超宽带射频功率放大器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109547042B (zh) * 2018-12-19 2020-12-22 天津大学 多通道发射机射频前端结构和终端以及无线通信设备
CN111200419B (zh) * 2020-01-16 2021-08-10 诺思(天津)微***有限责任公司 一种滤波器、双工器、高频前端电路及通信装置
CN111541464A (zh) * 2020-05-08 2020-08-14 济南浪潮高新科技投资发展有限公司 一种增加射频多通道间隔离度的方法及装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080290947A1 (en) * 2007-05-24 2008-11-27 Dawe Geoffrey C Reconfigurable tunable rf power amplifier
CN101917167A (zh) * 2010-08-24 2010-12-15 惠州市正源微电子有限公司 射频功率放大器功率合成电路
CN102664653A (zh) * 2012-05-17 2012-09-12 天津里外科技有限公司 移动终端及其具有射频数模转换式线性发射机的射频前端
CN103107794A (zh) * 2011-11-04 2013-05-15 太阳诱电株式会社 双工器、滤波器和通信模块
CN109547042A (zh) * 2018-12-19 2019-03-29 天津大学 多通道发射机射频前端结构和终端以及无线通信设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8750810B2 (en) * 2009-07-24 2014-06-10 Qualcomm Incorporated Power amplifier with switched output matching for multi-mode operation
JP6216753B2 (ja) * 2014-09-16 2017-10-18 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. バンドローディングを低減するマルチバンドデバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080290947A1 (en) * 2007-05-24 2008-11-27 Dawe Geoffrey C Reconfigurable tunable rf power amplifier
CN101917167A (zh) * 2010-08-24 2010-12-15 惠州市正源微电子有限公司 射频功率放大器功率合成电路
CN103107794A (zh) * 2011-11-04 2013-05-15 太阳诱电株式会社 双工器、滤波器和通信模块
CN102664653A (zh) * 2012-05-17 2012-09-12 天津里外科技有限公司 移动终端及其具有射频数模转换式线性发射机的射频前端
CN109547042A (zh) * 2018-12-19 2019-03-29 天津大学 多通道发射机射频前端结构和终端以及无线通信设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3902144A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114614771A (zh) * 2022-01-25 2022-06-10 电子科技大学 基于频率连续可调的超宽带射频功率放大器

Also Published As

Publication number Publication date
EP3902144A1 (en) 2021-10-27
EP3902144A4 (en) 2022-02-23
CN109547042A (zh) 2019-03-29
CN109547042B (zh) 2020-12-22

Similar Documents

Publication Publication Date Title
US11652462B2 (en) Multiplexer with hybrid acoustic passive filter
WO2020125664A1 (zh) 多通道发射机射频前端结构和终端以及无线通信设备
US11336238B2 (en) High-frequency module and communication apparatus
KR102060406B1 (ko) 분파 장치 및 그 설계 방법
US8699966B2 (en) High-frequency switch module
US7796953B2 (en) Transmitter, power amplifier and filtering method
US10277191B2 (en) Composite filter apparatus, high-frequency front end circuit, and communication apparatus
US20210399750A1 (en) Multiplexing circuits with baw resonators as network elements for higher performance
EP2870701B1 (en) Transceiver front-end
US9209775B2 (en) Electronic circuit
CN114095049B (zh) 一种射频收发开关电路、射频前端电路及射频收发机
US11121694B2 (en) Multiplexer
CN111342793B (zh) 带通滤波器及提高其抑制水平的方法、双工器和电子设备
US20080101263A1 (en) Single-ended to differential duplexer filter
CN108540164A (zh) 一种射频前端***
JP6822444B2 (ja) 複合型フィルタ装置、高周波フロントエンド回路および通信装置
JP2021064874A (ja) 高周波モジュールおよび通信装置
CN110710119B (zh) 高频模块
US10211879B2 (en) Front-end module
CN113972926B (zh) 一种射频收发开关电路、射频前端电路及射频收发机
CN113824464A (zh) 天线双讯器电路、功率放大器发射模组及移动通信设备
CN113746488B (zh) 一种射频模组及电子设备
CN115940973A (zh) 一种利用切比雪夫电路解决endc组合共存干扰的***
CN117176195A (zh) 一种射频架构及移动终端
JP2021082975A (ja) 高周波回路および通信装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19899772

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2019899772

Country of ref document: EP

Effective date: 20210719