WO2020104759A1 - Method for manufacturing a flexible integrated circuit support, flexible integrated circuit support, module comprising a flexible support and an integrated circuit - Google Patents
Method for manufacturing a flexible integrated circuit support, flexible integrated circuit support, module comprising a flexible support and an integrated circuitInfo
- Publication number
- WO2020104759A1 WO2020104759A1 PCT/FR2019/052797 FR2019052797W WO2020104759A1 WO 2020104759 A1 WO2020104759 A1 WO 2020104759A1 FR 2019052797 W FR2019052797 W FR 2019052797W WO 2020104759 A1 WO2020104759 A1 WO 2020104759A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sheet
- conductive material
- integrated circuit
- cavity
- recesses
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 80
- 238000003486 chemical etching Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 238000005538 encapsulation Methods 0.000 claims description 17
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07745—Mounting details of integrated circuit chips
- G06K19/07747—Mounting details of integrated circuit chips at least one of the integrated circuit chips being mounted as a module
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- H01L21/4814—Conductive parts
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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Definitions
- the invention relates to the field of modules comprising an integrated circuit. These modules are used for example for applications in the field of electronic identity documents, such as electronic passports (“ePassport” in English), electronic identity cards (“elD” in English), driving licenses, secure access cards, health cards, etc.
- electronic identity documents such as electronic passports (“ePassport” in English), electronic identity cards (“elD” in English), driving licenses, secure access cards, health cards, etc.
- Such documents include a module itself comprising an integrated electronic circuit (electronic chip) mounted on a support making it possible to connect this integrated circuit to an antenna also inserted in the document.
- an integrated electronic circuit electronic chip
- a substrate 1 is produced in the form of a strip comprising a plurality of supports 2 ( Figure 1).
- Each support 2 is structured in the form of a grid (also called “lead-frame” in English).
- Recesses 3 make it possible to define at least partially different zones at the level of each support 2. These recesses 3 are cut out over the entire thickness of the substrate 1. These recesses 3 thus make it possible to delimit, for each support 2, a support area 4, two connection zones 5 and two transfer zones 6, intermediate between the support zone 4 and each of the connection zones 5 located on either side of a support zone 4. As shown in FIG.
- the support zone 4 is intended to receive an integrated circuit 7.
- the integrated circuit 7 is fixed thereto by means of a layer (not shown) of adhesive.
- the connection areas 5 are intended to establish a connection with an antenna (not shown).
- the transfer zones 6 make it possible to fix and connect one end of a connection wire 8 in a region of the support 2 in electrical continuity, via conductive portions 9 (see FIG. 1) remained between the recesses 3, with a connection zone 5, while the other end of the electric wire 8 is fixed and connected to a conductive terminal of the integrated circuit 7.
- connection zones in the sheet of electrically conductive material delimited at least partially by recesses made over the entire thickness of the sheet of conductive material.
- This method further comprises the production by chemical etching of the recesses and at least one cavity.
- the cavity results from the etching of the sheet of conductive material from its first main face.
- the sheet of conductive material then has a smaller thickness at this cavity, than on other zones of the sheet of conductive material.
- the sheet of conductive material in which the cavity is etched can be very thin, for example less than 200 micrometers, or even less than 150 micrometers, or even have a thickness such that the module has a thickness less than 150 micrometers after encapsulation of the electronic components.
- the fact of making the recesses also by etching makes it possible to simplify the manufacturing process, since all of the structures (recesses, cavities, etc.) are produced on the sheet of conductive material by the same technology, possibly with a roller. roller, advantageously, without using other tools such as cutting tools and / or hammering.
- the chemical etching of the recesses is carried out from the first and second main faces of the sheet of conductive material;
- the chemical etching is carried out on X% of the thickness of the sheet of conductive material from the first main face of the sheet of conductive material and Y% of the thickness of the sheet of conductive material from the second main face of the sheet of conductive material, the sum of X% and Y% being greater than or equal to 100%;
- the recesses are cut by chemical etching, in the thickness of the sheet of conductive material essentially simultaneously with the production of the cavity, using a local control of the etching parameters;
- the chemical etching of the recesses and of the cavity is carried out, from roll to roll, in at least one etching chamber and the etching parameters include the speed of travel of the sheet of conductive material in the etching chamber and / or the spray pressure of the etching liquid applied in the etching chamber;
- the method comprises a step of fixing at least one integrated circuit in the cavity and a step of electrical connection of the integrated circuit to at least two connection zones.
- the invention also relates to a flexible support for a flexible integrated circuit.
- This support is produced in accordance with the method mentioned above.
- This support then comprises a sheet of electrically conductive material having first and second main faces, with a support zone and at least two connection zones, these connection zones being delimited at least partially by recesses made over the entire thickness of the sheet of conductive material.
- This support further comprises a cavity formed on the first main face of the sheet of conductive material, at the level of which the sheet of conductive material has a thickness less than on other areas of the sheet of conductive material.
- This flexible support also optionally includes a material
- This flexible support optionally includes attachment structures made on the second main face, at at least some recesses cut in the thickness of the sheet of conductive material.
- the invention also relates to a module comprising a support as mentioned above, as well as an integrated circuit housed in a cavity and electrically connected to the connection areas.
- This module possibly includes an encapsulation material covering the integrated circuit, and the cavity has a depth adapted so that the maximum total thickness of the sheet of conductive material, of the integrated circuit and of the encapsulation material is between 150 and 350 micrometers and preferably less than or equal to 200 micrometers.
- FIG 1 schematically seen from above, a substrate of the prior art, in the form of a strip comprising a plurality of supports;
- FIG 2 shows schematically in section, a module comprising one of the flexible supports of Figure 1, as well as an integrated circuit
- FIG 3 shows schematically seen from above, an example of an integrated circuit support obtained using a method according to the invention
- FIG 4 schematically represents different steps of an exemplary method according to the invention
- FIG 5 schematically represents different steps of another example of a process according to the invention.
- FIG 6 schematically represents different stages of another example of a process according to the invention.
- FIG 7 schematically represents different stages of yet another example of a process according to the invention.
- the general structure of a strip 1 substrate 1 comprising a plurality of supports 2 according to the invention is similar to that of the prior art shown in FIG. 1.
- a support 2 is also structured in the form of a grid ("lead-frame"). It comprises
- connection zones 5 and the transfer zones 6 - conductive portions 9 to establish electrical continuity between the connection zones 5 and the transfer zones 6.
- the support 2 includes a cavity 12 intended to receive an integrated circuit 7.
- the cavity can be produced in different ways. Several examples of methods for producing a module 10 with a cavity 12 are described in relation to FIGS. 4 to 7. Advantageously, these examples of methods are implemented continuously from reel to reel or from roll to roll ("reel -to-reel "or” roll-to-roll "in English), but they can of course be implemented sheet by sheet. In these examples, an electrically conductive material 13 is provided, consisting for example of copper or a copper alloy.
- This electrically conductive material 13 is supplied in the form of a sheet, or of a sheet, which is therefore wound up when it is desired to carry out the process continuously.
- the sheet of electrically conductive material 13 comprises a first 13a and a second 13b main faces, delimiting the sheet of electrically conductive material 13 according to its thickness. This thickness is for example between 70 and 100 micrometers.
- recesses 3 and a cavity 12 are produced by chemical etching.
- a photo lithography method is used.
- a sheet of conductive material 13 is provided (see FIG. 4a), then a film of photosensitive resin 100a or 100b is deposited on each of its main faces 13a, 13b respectively. (see FIG. 4b).
- These photosensitive films 100a, 100b are each exposed respectively through a mask, with suitable light. For example, this masking is carried out using photosensitive films 10 to 50 micrometers thick, hot-rolled and then exposed to ultraviolet light. Certain areas of these films 100a, 100b can then be released during a revelation step.
- the exposed areas of the photosensitive films are revealed by an alkaline development step.
- areas 200b devoid of film after the revelation step are located opposite at the level, on each of the first 13a and second 13b main faces of the sheet of conductive material 13, at the level regions in which it is desired to make recesses 3, while a zone 200a devoid of film is located only on the first main face 13a of the sheet of conductive material 13 (see FIG. 4c).
- X% or Y% may in particular be each greater than 50%.
- the choice of the values X% and Y% makes it possible to adjust the engraving edges at the edge of the recesses 3 and / or of the cavity 12.
- the cavity 12 is etched for example over a depth P of 25 to 75% of the thickness of the sheet of conductive material 13.
- the possible steps relating to the fixing and connection of an integrated circuit, as well as the encapsulation thereof, are, for example, similar to those described below in relation to the other examples of implementation of the method.
- FIG. 5 Another example of implementation of the method is illustrated in FIG. 5.
- a sheet of electrically conductive material 13 is provided in a step a).
- the sheet of electrically conductive material 13 is etched on all its thickness using a photolithography method similar to that described above in relation to FIG. 4, to form the recesses 3 (through openings) and thus structure the supports 2 with their support area 4, their areas of connection 5, their transfer zones 6 and their conductive portions 9.
- photosensitive films are deposited on each of the faces 13a, 13b, which are exposed and revealed so as to form zones devoid of resin facing each other. -vis, at the regions corresponding to the recesses 3.
- a mask is again produced by photolithography on each of the two faces 13a, 13b of the sheet of electrically conductive material 13.
- These films are subjected to a treatment by photolithography to expose only part of the support zone 4 , on the first face 13a of the sheet of electrically conductive material 13.
- areas of the second face 13b are also exposed in order to produce attachment structures 14, as will be explained below.
- the exposed areas of the photosensitive films are revealed.
- the parts of the sheet of conductive material 13 not protected by the photosensitive films are then etched over a certain depth of the sheet of electrically conductive material 13, to form the cavity 12 and
- an integrated circuit 7 is fixed on the first main face 13a of the sheet of conductive material 13, in the cavity 12, using a material not shown (paste or adhesive), known from l skilled in the field of fixing electronic chips (“die attach” technology).
- the maximum thickness of the assembly constituted by the sheet of conductive material 13 and the integrated circuit 7 is for example between 70 and 150 ⁇ m.
- the integrated circuit 7 is connected to the connection zones 5, via the transfer zones 6 and the conductive portions 9, using conductive wires 8 (for example wires of an alloy essentially comprising gold, silver, or copper 15 to 25 ⁇ m micrometers in diameter).
- An encapsulation material 11 (a resin or any other dielectric material suitable for producing an overmolding, for example PVC) is then overmolded on the portion of the support 2 comprising the integrated circuit 7, the conducting wires 8 and the transfer zones 6 If hanging structures 14 have been produced, the overmolding is
- step e) is carried out by laminating a removable adhesive film on the second main face 13b of the sheet of electrically conductive material 13, in order to close the recesses 3 and their possible structures. hook 14 respectively.
- the integrated circuit 7 is connected to the connection zones 5, via the transfer zones 6 and the conductive portions 9, using conductive wires 8 (for example wires of an alloy essentially comprising gold, silver, or copper 15 to 25 ⁇ m in diameter).
- conductive wires 8 for example wires of an alloy essentially comprising gold, silver, or copper 15 to 25 ⁇ m in diameter.
- an encapsulation material 11 is dispensed on the integrated circuit 7 and the connection wires 8.
- the control of the surface on which the encapsulation material 11 is spread can be helped by a suitable positioning and shape of the cutouts 3
- the encapsulation material 11 is flattened before it is completely cured by polymerization.
- encapsulation 11 is for example between 150 and 350 micrometers.
- FIG. 6 Another example of implementation of the method is illustrated in FIG. 6. The nature and the thicknesses of the materials used for this example are essentially the same as above.
- a sheet of electrically conductive material 13 is provided in a step a).
- a mask is produced on each of the two faces 13a, 13b of the sheet of electrically conductive material 13.
- the film is subjected to a photolithography treatment to expose part of the support zone 4, as well as zones corresponding to the recesses 3.
- the film is processed by
- the thickness Y% etched from the second main face 13b corresponds to that desired for producing the attachment structures and the thickness X% etched from the first main face 13a corresponds to that desired for producing the cavity 12 and passing through the sheet of electrically conductive material 13 at the level of the recesses 3.
- FIG. 7 Another example of implementation of the method is illustrated in FIG. 7.
- the nature and the thicknesses of the materials used for this other example are essentially the same as for the previous examples.
- a sheet of electrically conductive material 13 13a, 13b of the sheet of electrically conductive material 13.
- a mask is produced on each of the two main faces 13a, 13b of the sheet of electrically conductive material 13.
- the film is treated by
- a new mask is produced on each of the two faces 13a,
- steps d) and e) are essentially the same as those described in connection with FIG. 5 or FIG. 6.
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Abstract
The invention relates to a method for manufacturing a flexible integrated circuit support (2). This method comprises using chemical etching to produce at least one cavity (12) on the first main face of a sheet of conductive material, and recesses (3) over the entire thickness of the sheet of conductive material. The invention also relates to a flexible integrated circuit support (2) produced using this method and to a module comprising a support (2) and an integrated circuit housed in the cavity (12).
Description
Procédé de fabrication d’un support flexible de circuit intégré, support flexible de circuit intégré, module comprenant un support flexible et un circuit intégré. Domaine technique Method of manufacturing a flexible integrated circuit support, flexible integrated circuit support, module comprising a flexible support and an integrated circuit. Technical area
L’invention concerne le domaine des modules comprenant un circuit intégré. Ces modules sont utilisés par exemple pour des applications dans le domaine des documents électroniques identitaires, tels que les passeports électroniques (« ePassport » en anglais), les cartes d’identité électroniques (« elD » en anglais), les permis de conduire, les cartes d’accès sécurisé, les cartes de santé, etc. The invention relates to the field of modules comprising an integrated circuit. These modules are used for example for applications in the field of electronic identity documents, such as electronic passports (“ePassport” in English), electronic identity cards (“elD” in English), driving licenses, secure access cards, health cards, etc.
De tels documents comprennent un module comprenant lui-même un circuit électronique intégré (puce électronique) montée sur un support permettant de connecter ce circuit intégré à une antenne également insérée dans le document. Etat de la technique Such documents include a module itself comprising an integrated electronic circuit (electronic chip) mounted on a support making it possible to connect this integrated circuit to an antenna also inserted in the document. State of the art
Un module de l’art antérieur est décrit par exemple dans le document DE 20 2012 100 694 Ul. A module of the prior art is described for example in document DE 20 2012 100 694 Ul.
Comme représenté sur les figures 1 et 2, selon la technologie décrite dans ce document DE 20 2012 100 694 Ul pour réaliser un module, on produit un substrat 1 sous forme de bande comprenant une pluralité de supports 2 (Figure 1). Chaque support 2 est structuré sous forme de grille (aussi appelée « lead-frame » en anglais). Des évidements 3 permettent de délimiter au moins partiellement différentes zones au niveau de chaque support 2. Ces évidements 3 sont découpés sur la totalité de l’épaisseur du substrat 1. Ces évidements 3 permettent ainsi de délimiter, pour chaque support 2, une zone support 4, deux zones de connexion 5 et deux zones de report 6, intermédiaires entre la zone support 4 et chacune des zones de connexion 5 situées de part et d’autre d’une zone support 4. Comme représenté sur la figure 2, dans un module fini 10, la zone support 4 est destinée à recevoir un circuit intégré 7. Le circuit intégré 7 y est fixé à l’aide d’une couche (non-représentée) d’adhésif. Les zones de connexions 5 sont destinées à établir une connexion avec une antenne (non-représentée). Les zones de report 6 permettent de fixer et connecter une extrémité d’un fil de connexion 8 dans une région du support 2 en continuité électrique, via des portions conductrices 9 (voir
figure 1) restées entre les évidements 3, avec une zone de connexion 5, alors que l’autre extrémité du fil électrique 8 est fixée et connectée à une borne conductrice du circuit intégré 7. As shown in Figures 1 and 2, according to the technology described in this document DE 20 2012 100 694 IU to produce a module, a substrate 1 is produced in the form of a strip comprising a plurality of supports 2 (Figure 1). Each support 2 is structured in the form of a grid (also called “lead-frame” in English). Recesses 3 make it possible to define at least partially different zones at the level of each support 2. These recesses 3 are cut out over the entire thickness of the substrate 1. These recesses 3 thus make it possible to delimit, for each support 2, a support area 4, two connection zones 5 and two transfer zones 6, intermediate between the support zone 4 and each of the connection zones 5 located on either side of a support zone 4. As shown in FIG. 2, in a finished module 10, the support zone 4 is intended to receive an integrated circuit 7. The integrated circuit 7 is fixed thereto by means of a layer (not shown) of adhesive. The connection areas 5 are intended to establish a connection with an antenna (not shown). The transfer zones 6 make it possible to fix and connect one end of a connection wire 8 in a region of the support 2 in electrical continuity, via conductive portions 9 (see FIG. 1) remained between the recesses 3, with a connection zone 5, while the other end of the electric wire 8 is fixed and connected to a conductive terminal of the integrated circuit 7.
Certains évidements 3 permettent d’isoler, dans le module fini et individualisé, les zones de report 6 et les zones de connexions 5 respectivement électriquement reliées à chacun des deux pôles du circuit imprimé 7. D’autres évidements 3 permettent essentiellement de circonscrire le matériau d’encapsulation 11 qui vient protéger le circuit intégré 7 et ses fils de connexion 8. Résumé de l’invention Certain recesses 3 make it possible to isolate, in the finished and individualized module, the transfer zones 6 and the connection zones 5 respectively electrically connected to each of the two poles of the printed circuit 7. Other recesses 3 essentially make it possible to circumscribe the material encapsulation 11 which protects the integrated circuit 7 and its connection wires 8. Summary of the invention
Il y a une recherche constante dans ce domaine afin, notamment, de rendre le module le plus discret possible et d’optimiser la fabrication des supports à partir desquels sont réalisés ces modules. There is constant research in this area in order, in particular, to make the module as discreet as possible and to optimize the manufacture of the supports from which these modules are made.
A cette fin, il est proposé un procédé de fabrication d’un support flexible de circuit intégré, comprenant To this end, a method of manufacturing a flexible integrated circuit support is proposed, comprising
- la fourniture d’une feuille de matériau électriquement conducteur ayant une première et une deuxième faces principales, - the supply of a sheet of electrically conductive material having first and second main faces,
- la réalisation d’au moins deux zones de connexion dans la feuille de matériau électriquement conducteur, délimitées au moins partiellement par des évidements réalisés sur la totalité de l’épaisseur de la feuille de matériau conducteur. - The production of at least two connection zones in the sheet of electrically conductive material, delimited at least partially by recesses made over the entire thickness of the sheet of conductive material.
Ce procédé comprend en outre la réalisation par gravure chimique des évidements et d’au moins une cavité. La cavité résulte de la gravure de la feuille de matériau conducteur à partir de sa première face principale. La feuille de matériau conducteur a alors une épaisseur moindre au niveau de cette cavité, que sur d’autres zones de la feuille de matériau conducteur. This method further comprises the production by chemical etching of the recesses and at least one cavity. The cavity results from the etching of the sheet of conductive material from its first main face. The sheet of conductive material then has a smaller thickness at this cavity, than on other zones of the sheet of conductive material.
Grâce à la réalisation d’une cavité dans laquelle peut être logé au moins un circuit intégré, il est possible de réduire l’épaisseur globale du module. Cette réduction d’épaisseur contribue à rendre le module pratiquement invisible, même lorsqu’il est intégré entre des feuillets relativement minces. La gravure chimique permet de contrôler avec précision l’épaisseur gravée. De ce fait, la feuille de matériau conducteur dans laquelle est gravée la cavité peut être très mince, par exemple inférieure à 200 micromètres, voire inférieure à 150 micromètres, voire aussi avoir une épaisseur telle que le module a une épaisseur inférieure à 150 micromètres
après encapsulation des composants électronique. En outre, le fait de réaliser les évidements également par gravure permet de simplifier le procédé de fabrication, puisque l’ensemble des structures (évidements, cavités, etc.) sont réalisées sur la feuille de matériau conducteur par la même technologie, éventuellement de rouleau à rouleau, avantageusement, sans avoir recours à d’autres outils tels que des outils de découpe et/ou de martelage. By making a cavity in which at least one integrated circuit can be housed, it is possible to reduce the overall thickness of the module. This reduction in thickness contributes to making the module practically invisible, even when it is integrated between relatively thin sheets. Chemical etching allows precise control of the etched thickness. Therefore, the sheet of conductive material in which the cavity is etched can be very thin, for example less than 200 micrometers, or even less than 150 micrometers, or even have a thickness such that the module has a thickness less than 150 micrometers after encapsulation of the electronic components. In addition, the fact of making the recesses also by etching makes it possible to simplify the manufacturing process, since all of the structures (recesses, cavities, etc.) are produced on the sheet of conductive material by the same technology, possibly with a roller. roller, advantageously, without using other tools such as cutting tools and / or hammering.
Ce procédé comporte en outre, l’une ou l’autre des caractéristiques suivantes considérées indépendamment les unes des autres ou en combinaison d’une ou plusieurs autres : This method further comprises one or other of the following characteristics considered independently of each other or in combination with one or more others:
- la gravure chimique des évidements est réalisée à partir des première et deuxième faces principales de la feuille de matériau conducteur ; - The chemical etching of the recesses is carried out from the first and second main faces of the sheet of conductive material;
- la gravure chimique est réalisée sur X% de l’épaisseur de la feuille de matériau conducteur à partir de la première face principale de la feuille de matériau conducteur et Y% de l’épaisseur de la feuille de matériau conducteur à partir de la deuxième face principale de la feuille de matériau conducteur, la somme de X% et Y% étant supérieure ou égale à 100% ; the chemical etching is carried out on X% of the thickness of the sheet of conductive material from the first main face of the sheet of conductive material and Y% of the thickness of the sheet of conductive material from the second main face of the sheet of conductive material, the sum of X% and Y% being greater than or equal to 100%;
- les évidements sont découpés par gravure chimique, dans l’épaisseur de la feuille de matériau conducteur essentiellement simultanément à la réalisation de la cavité, à l’aide d’un contrôle local des paramètres de gravure ; - The recesses are cut by chemical etching, in the thickness of the sheet of conductive material essentially simultaneously with the production of the cavity, using a local control of the etching parameters;
- la gravure chimique des évidements et de la cavité est réalisée, de rouleau à rouleau, dans au moins une chambre de gravure et les paramètres de gravure comprennent la vitesse de défilement de la feuille de matériau conducteur dans la chambre de gravure et/ou la pression de pulvérisation du liquide de gravure appliquée dans la chambre de gravure ; the chemical etching of the recesses and of the cavity is carried out, from roll to roll, in at least one etching chamber and the etching parameters include the speed of travel of the sheet of conductive material in the etching chamber and / or the spray pressure of the etching liquid applied in the etching chamber;
- des structures d’accrochage sont réalisées sur la deuxième face principale, au niveau d’au moins certains évidements découpés dans l’épaisseur de la feuille de matériau conducteur ; - attachment structures are produced on the second main face, at at least some recesses cut in the thickness of the sheet of conductive material;
- le procédé comprend une étape de fixation d’au moins un circuit intégré dans la cavité et une étape de connexion électrique du circuit intégré à au moins deux zones de connexion. - The method comprises a step of fixing at least one integrated circuit in the cavity and a step of electrical connection of the integrated circuit to at least two connection zones.
L’invention concerne également un support flexible de circuit intégré flexible. Ce support est réalisé conformément au procédé mentionné précédemment. Ce support comprend alors une feuille de matériau électriquement conducteur ayant
une première et une deuxième faces principales, avec une zone support et au moins deux zones de connexion, ces zones de connexion étant délimitées au moins partiellement par des évidements réalisés sur la totalité de l’épaisseur de la feuille de matériau conducteur. Ce support comprend en outre une cavité ménagée sur la première face principale de la feuille de matériau conducteur, au niveau de laquelle la feuille de matériau conducteur a une épaisseur moindre que sur d’autres zones de la feuille de matériau conducteur. The invention also relates to a flexible support for a flexible integrated circuit. This support is produced in accordance with the method mentioned above. This support then comprises a sheet of electrically conductive material having first and second main faces, with a support zone and at least two connection zones, these connection zones being delimited at least partially by recesses made over the entire thickness of the sheet of conductive material. This support further comprises a cavity formed on the first main face of the sheet of conductive material, at the level of which the sheet of conductive material has a thickness less than on other areas of the sheet of conductive material.
Ce support flexible comporte en outre éventuellement un matériau This flexible support also optionally includes a material
d’encapsulation recouvrant au moins un circuit intégré logé dans une cavité ménagée dans la feuille de matériau conducteur. Avantageusement, la surface sur laquelle le matériau d’encapsulation est dispensé est délimitée par au moins certains évidements. Ce support flexible comprend éventuellement des structures d’accrochage réalisées sur la deuxième face principale, au niveau d’au moins certains évidements découpés dans l’épaisseur de la feuille de matériau conducteur. encapsulation covering at least one integrated circuit housed in a cavity in the sheet of conductive material. Advantageously, the surface on which the encapsulation material is dispensed is delimited by at least certain recesses. This flexible support optionally includes attachment structures made on the second main face, at at least some recesses cut in the thickness of the sheet of conductive material.
L’invention concerne également un module comprenant un support tel que mentionné ci-dessus, ainsi qu’un circuit intégré logé dans une cavité et connecté électriquement aux zones de connexion. The invention also relates to a module comprising a support as mentioned above, as well as an integrated circuit housed in a cavity and electrically connected to the connection areas.
Ce module comprend éventuellement un matériau d’encapsulation recouvrant le circuit intégré, et la cavité a une profondeur adaptée pour que l’épaisseur totale maximale de la feuille de matériau conducteur, du circuit intégré et du matériau d’encapsulation soit comprise entre 150 et 350 micromètres et préférentiellement inférieure ou égale à 200 micromètres. Brève description des dessins This module possibly includes an encapsulation material covering the integrated circuit, and the cavity has a depth adapted so that the maximum total thickness of the sheet of conductive material, of the integrated circuit and of the encapsulation material is between 150 and 350 micrometers and preferably less than or equal to 200 micrometers. Brief description of the drawings
D’autres caractéristiques, buts et avantages de l’invention apparaîtront à la lecture de la description détaillée qui va suivre, et en regard des dessins annexés, donnés à titre d’exemple non limitatif et sur lesquels : Other characteristics, objects and advantages of the invention will appear on reading the detailed description which follows, and with reference to the appended drawings, given by way of non-limiting example and in which:
[Fig 1] représente schématiquement vu de dessus, un substrat de l’art antérieur, sous forme de bande comprenant une pluralité de supports ; [Fig 1] schematically seen from above, a substrate of the prior art, in the form of a strip comprising a plurality of supports;
[Fig 2] représente schématiquement en coupe, un module comprenant l’un des supports flexibles de la figure 1, ainsi qu’un circuit intégré ;
[Fig 3] représente schématiquement vu de dessus, un exemple de support de circuit intégré obtenu à l’aide d’un procédé conforme à l’invention ; [Fig 2] shows schematically in section, a module comprising one of the flexible supports of Figure 1, as well as an integrated circuit; [Fig 3] shows schematically seen from above, an example of an integrated circuit support obtained using a method according to the invention;
[Fig 4] représente schématiquement différentes étapes d’un exemple de procédé selon l’invention ; [Fig 4] schematically represents different steps of an exemplary method according to the invention;
[Fig 5] représente schématiquement différentes étapes d’un autre exemple de procédé conforme à l’invention ; [Fig 5] schematically represents different steps of another example of a process according to the invention;
[Fig 6] représente schématiquement différentes étapes d’un autre exemple de procédé conforme à l’invention ; et [Fig 6] schematically represents different stages of another example of a process according to the invention; and
[Fig 7] représente schématiquement différentes étapes d’encore un autre exemple de procédé conforme à l’invention. [Fig 7] schematically represents different stages of yet another example of a process according to the invention.
Description détaillée detailed description
Sur les différentes figures les éléments identiques ou similaires portent les mêmes références numériques. In the various figures, identical or similar elements bear the same numerical references.
La structure générale d’un substrat 1 sous forme de bande comprenant une pluralité de supports 2 conformes à l’invention est similaire à celle de l’art antérieur représentée sur la figure 1. The general structure of a strip 1 substrate 1 comprising a plurality of supports 2 according to the invention is similar to that of the prior art shown in FIG. 1.
Comme représenté sur la figure 3, un support 2 conforme à l’invention est également structuré sous forme de grille (« lead-frame »). Il comporte As shown in FIG. 3, a support 2 according to the invention is also structured in the form of a grid ("lead-frame"). It comprises
- des évidements 3 découpés sur la totalité de l’épaisseur du substrat 1, - recesses 3 cut out over the entire thickness of the substrate 1,
- une zone support 4, deux zones de connexion 5 et deux zones de report 6, a support zone 4, two connection zones 5 and two transfer zones 6,
- des portions conductrices 9 pour établir une continuité électrique entre les zones de connexion 5 et les zone de report 6. - conductive portions 9 to establish electrical continuity between the connection zones 5 and the transfer zones 6.
En outre, le support 2 comporte une cavité 12 destinée à recevoir un circuit intégré 7. In addition, the support 2 includes a cavity 12 intended to receive an integrated circuit 7.
La cavité peut être produite de différentes manières. Plusieurs exemples de procédés de réalisation d’un module 10 avec une cavité 12 sont décrits en relation avec les figures 4 à 7. Avantageusement, ces exemples de procédés sont mis en œuvre en continu de bobine à bobine ou de rouleau à rouleau (« reel-to-reel » ou « roll-t-o-roll » en anglais), mais ils peuvent bien entendu être mis en œuvre en feuille à feuille. Dans ces exemples, on fournit un matériau électriquement conducteur 13 constitué par exemple de cuivre ou d’un alliage de cuivre. The cavity can be produced in different ways. Several examples of methods for producing a module 10 with a cavity 12 are described in relation to FIGS. 4 to 7. Advantageously, these examples of methods are implemented continuously from reel to reel or from roll to roll ("reel -to-reel "or" roll-to-roll "in English), but they can of course be implemented sheet by sheet. In these examples, an electrically conductive material 13 is provided, consisting for example of copper or a copper alloy.
Cependant, il est possible d’utiliser d’autres métaux ou alliages de métaux
(exemples : inox, alliage d’aluminium). Ce matériau électriquement conducteur 13 est fourni sous forme d’un feuillet, ou d’une feuille, qui est donc enroulé lorsque l’on souhaite mettre en œuvre le procédé en continu. La feuille de matériau électriquement conducteur 13 comporte une première 13a et une deuxième 13b faces principales, délimitant la feuille de matériau électriquement conducteur 13 selon son épaisseur. Cette épaisseur est par exemple comprise entre 70 et 100 micromètres. However, it is possible to use other metals or metal alloys (examples: stainless steel, aluminum alloy). This electrically conductive material 13 is supplied in the form of a sheet, or of a sheet, which is therefore wound up when it is desired to carry out the process continuously. The sheet of electrically conductive material 13 comprises a first 13a and a second 13b main faces, delimiting the sheet of electrically conductive material 13 according to its thickness. This thickness is for example between 70 and 100 micrometers.
Dans les différents exemples, on réalise par gravure chimique des évidements 3 et une cavité 12. Pour protéger les zones qui ne doivent pas être gravées, on utilise une méthode de photo lithographie. Ainsi, comme illustré par la figure 4 et de manière connue, on fournit une feuille de matériau conducteur 13 (voir FIG. 4a), puis on dépose un film de résine photosensible 100a ou 100b, respectivement sur chacune de ses faces principales 13a, 13b (voir FIG. 4b). Ces films photosensibles 100a, 100b sont exposés chacun respectivement à travers un masque, avec une lumière adaptée. Par exemple, ce masquage est réalisé à l’aide de films photosensibles de 10 à 50 micromètres d’épaisseur, laminés à chaud, puis exposés à la lumière ultra-violette. Certaines zones de ces films 100a, 100b peuvent alors être dégagées au cours d’une étape de révélation. Par exemple, les zones exposées des films photosensibles sont révélées par une étape de développement alcalin. Selon un premier exemple de procédé, des zones 200b dépourvues de film après l’étape de révélation se trouvent en vis-à-vis au niveau, sur chacune des première 13a et deuxième 13b faces principales de la feuille de matériau conducteur 13, au niveau de régions dans lesquelles on souhaite réaliser des évidements 3, tandis qu’une zone 200a dépourvue de film se trouve uniquement sur la première face principale 13a de la feuille de matériau conducteur 13 (voir FIG. 4c). Ainsi, si sur chacune des faces principales 13a, 13b, on procède en simultané ou non, à une gravure sur X% de l’épaisseur de la feuille de matériau conducteur 13 à partir de la première face principale 13a et sur Y% de cette épaisseur, à partir de la deuxième face principale 13b et que la somme de X% et Y% est supérieure ou égale à 100%, on obtient des découpes 3 traversant la totalité de l’épaisseur au niveau des zones 200b et une cavité au niveau de la zone 200a (voir FIG. 4d). In the various examples, recesses 3 and a cavity 12 are produced by chemical etching. To protect the areas which must not be etched, a photo lithography method is used. Thus, as illustrated in FIG. 4 and in a known manner, a sheet of conductive material 13 is provided (see FIG. 4a), then a film of photosensitive resin 100a or 100b is deposited on each of its main faces 13a, 13b respectively. (see FIG. 4b). These photosensitive films 100a, 100b are each exposed respectively through a mask, with suitable light. For example, this masking is carried out using photosensitive films 10 to 50 micrometers thick, hot-rolled and then exposed to ultraviolet light. Certain areas of these films 100a, 100b can then be released during a revelation step. For example, the exposed areas of the photosensitive films are revealed by an alkaline development step. According to a first example of a method, areas 200b devoid of film after the revelation step are located opposite at the level, on each of the first 13a and second 13b main faces of the sheet of conductive material 13, at the level regions in which it is desired to make recesses 3, while a zone 200a devoid of film is located only on the first main face 13a of the sheet of conductive material 13 (see FIG. 4c). Thus, if on each of the main faces 13a, 13b, an etching is carried out, simultaneously or not, on X% of the thickness of the sheet of conductive material 13 from the first main face 13a and on Y% of this thickness, starting from the second main face 13b and the sum of X% and Y% is greater than or equal to 100%, cuts 3 are obtained crossing the entire thickness at the level of the zones 200b and a cavity at the level of zone 200a (see FIG. 4d).
On notera que X% ou Y% peuvent notamment être chacun supérieur à 50%. Le choix des valeurs X% et Y% permet d’ajuster les flancs de gravure en bordure des
évidements 3 et/ou de la cavité 12. La cavité 12 est gravée par exemple sur une profondeur P de 25 à 75 % de l’épaisseur de la feuille de matériau conducteur 13. Les éventuelles étapes relatives à la fixation et la connexion d’un circuit intégré, ainsi que l’encapsulation de celui-ci sont, par exemple, semblables à celles décrites ci-dessous en relation avec les autres exemples de mise en œuvre du procédé. It should be noted that X% or Y% may in particular be each greater than 50%. The choice of the values X% and Y% makes it possible to adjust the engraving edges at the edge of the recesses 3 and / or of the cavity 12. The cavity 12 is etched for example over a depth P of 25 to 75% of the thickness of the sheet of conductive material 13. The possible steps relating to the fixing and connection of an integrated circuit, as well as the encapsulation thereof, are, for example, similar to those described below in relation to the other examples of implementation of the method.
Un autre exemple de mise en œuvre du procédé est illustré sur la figure 5. On fournit, à une étape a), une feuille de matériau électriquement conducteur 13. A une étape b), la feuille de matériau électriquement conducteur 13 est gravée sur toute son épaisseur à l’aide d’une méthode de photolithogravure similaire à celle décrite ci-dessus en relation avec la figure 4, pour former les évidements 3 (ouvertures traversantes) et ainsi structurer les supports 2 avec leur zone support 4, leurs zones de connexion 5, leurs zones de report 6 et leur portions conductrices 9. Par exemple, on dépose des films photosensibles sur chacune des faces 13a, 13b, que l’on expose et révèle de manière à former des zones dépourvues de résine en vis-à-vis, au niveau des régions correspondant aux évidements 3. Après gravure, de X% de l’épaisseur de la feuille de matériau conducteur 13 à partir de la première face principale 13a et sur Y% de cette épaisseur, à partir de la deuxième face principale 13b, la somme de X% et Y% étant supérieure ou égale à 100%, on obtient les découpes 3 traversant la totalité de l’épaisseur. Another example of implementation of the method is illustrated in FIG. 5. A sheet of electrically conductive material 13 is provided in a step a). In a step b), the sheet of electrically conductive material 13 is etched on all its thickness using a photolithography method similar to that described above in relation to FIG. 4, to form the recesses 3 (through openings) and thus structure the supports 2 with their support area 4, their areas of connection 5, their transfer zones 6 and their conductive portions 9. For example, photosensitive films are deposited on each of the faces 13a, 13b, which are exposed and revealed so as to form zones devoid of resin facing each other. -vis, at the regions corresponding to the recesses 3. After etching, X% of the thickness of the sheet of conductive material 13 from the first main face 13a and Y% of this thickness, from the second main face 13b, the sum of X% and Y% being greater than or equal to 100%, we obtain cuts 3 crossing the entire thickness.
A une étape c) un masque est à nouveau réalisé par photolithographie sur chacune des deux faces 13a, 13b de la feuille de matériau électriquement conducteur 13. Ces films subissent un traitement par photolithographie pour n’exposer qu’une partie de la zone support 4, sur la première face 13a de la feuille de matériau électriquement conducteur 13. Eventuellement, des zones de la deuxième face 13b sont également exposées afin de réaliser des structures d’accrochage 14, comme ce sera expliqué plus loin. Les zones exposées des films photosensibles sont révélées. Les parties de la feuille de matériau conducteur 13 non protégées par les films photosensibles sont alors gravées sur une certaine profondeur de la feuille de matériau électriquement conducteur 13, pour former la cavité 12 et In a step c) a mask is again produced by photolithography on each of the two faces 13a, 13b of the sheet of electrically conductive material 13. These films are subjected to a treatment by photolithography to expose only part of the support zone 4 , on the first face 13a of the sheet of electrically conductive material 13. Optionally, areas of the second face 13b are also exposed in order to produce attachment structures 14, as will be explained below. The exposed areas of the photosensitive films are revealed. The parts of the sheet of conductive material 13 not protected by the photosensitive films are then etched over a certain depth of the sheet of electrically conductive material 13, to form the cavity 12 and
éventuellement les structures d’accrochage 14. Après gravure de la cavité 12 et des éventuelles structures d’accrochage 14, les films de masquage sont enlevés.
A une étape d), un circuit intégré 7 est fixé sur la première face principale 13a de la feuille de matériau conducteur 13, dans la cavité 12, à l’aide d’un matériau non représenté (pâte ou adhésif), connu de l’homme du métier du domaine de la fixation des puces électroniques (technologie « die attach »). A l’issue de cette étape, l’épaisseur maximale de l’ensemble constitué par la feuille de matériau conducteur 13 et le circuit intégré 7 est comprise par exemple entre 70 et 150 pm. A une étape e), le circuit intégré 7 est connecté aux zones de connexion 5, via les zones de report 6 et les portions conductrices 9, à l’aide de fils conducteurs 8 (par exemple des fils d’un alliage comprenant essentiellement de l’or, de d’argent, ou du cuivre de 15 à 25 pm micromètres de diamètre). Un matériau d’encapsulation 11 (Une résine ou tout autre matériau diélectrique adapté pour réaliser un surmoulage, par exemple du PVC) est ensuite surmoulé sur la portion du support 2 comprenant le circuit intégré 7, les fils conducteurs 8 et les zones de report 6. Si des structures d’accrochage 14 ont été réalisées, le surmoulage est optionally the attachment structures 14. After etching of the cavity 12 and any attachment structures 14, the masking films are removed. In a step d), an integrated circuit 7 is fixed on the first main face 13a of the sheet of conductive material 13, in the cavity 12, using a material not shown (paste or adhesive), known from l skilled in the field of fixing electronic chips (“die attach” technology). At the end of this step, the maximum thickness of the assembly constituted by the sheet of conductive material 13 and the integrated circuit 7 is for example between 70 and 150 μm. In a step e), the integrated circuit 7 is connected to the connection zones 5, via the transfer zones 6 and the conductive portions 9, using conductive wires 8 (for example wires of an alloy essentially comprising gold, silver, or copper 15 to 25 µm micrometers in diameter). An encapsulation material 11 (a resin or any other dielectric material suitable for producing an overmolding, for example PVC) is then overmolded on the portion of the support 2 comprising the integrated circuit 7, the conducting wires 8 and the transfer zones 6 If hanging structures 14 have been produced, the overmolding is
avantageusement réalisé de manière à ce que le matériau d’encapsulation 11 qui a pénétré dans des évidements 3, pénètre également dans les éventuelles structures d’accrochage 14 respectivement associées aux évidement 3. advantageously made so that the encapsulation material 11 which has penetrated into recesses 3, also penetrates into the possible attachment structures 14 respectively associated with the recess 3.
Alternativement, l’étape e) est réalisée en laminant un film adhésif enlevable (« removable adhesive » en anglais), sur la deuxième face principale 13b de la feuille de matériau électriquement conducteur 13, afin d’obturer les évidements 3 et leurs éventuelles structures d’accrochage 14 respectives. Puis, le circuit intégré 7 est connecté aux zones de connexion 5, via les zones de report 6 et les portions conductrices 9, à l’aide de fils conducteur 8 (par exemple des fils d’un alliage comprenant essentiellement de l’or, de d’argent, ou du cuivre de 15 à 25 pm micromètres de diamètre). Puis un matériau d’encapsulation 11 est dispensé sur le circuit intégré 7 et les fils de connexion 8. Le contrôle de la surface sur laquelle le matériau d’encapsulation 11 s’étale peut être aidé par un positionnement et une forme adaptés des découpes 3. Eventuellement, le matériau d’encapsulation 11 est aplati avant qu’il ne soit complètement durci par polymérisation. Alternatively, step e) is carried out by laminating a removable adhesive film on the second main face 13b of the sheet of electrically conductive material 13, in order to close the recesses 3 and their possible structures. hook 14 respectively. Then, the integrated circuit 7 is connected to the connection zones 5, via the transfer zones 6 and the conductive portions 9, using conductive wires 8 (for example wires of an alloy essentially comprising gold, silver, or copper 15 to 25 µm in diameter). Then an encapsulation material 11 is dispensed on the integrated circuit 7 and the connection wires 8. The control of the surface on which the encapsulation material 11 is spread can be helped by a suitable positioning and shape of the cutouts 3 Optionally, the encapsulation material 11 is flattened before it is completely cured by polymerization.
A l’issue de cette étape, l’épaisseur maximale E de l’ensemble constitué par la feuille de matériau conducteur 13, du circuit intégré 7 et du matériau At the end of this step, the maximum thickness E of the assembly constituted by the sheet of conductive material 13, of the integrated circuit 7 and of the material
d’encapsulation 11 est comprise par exemple entre 150 et 350 micromètres.
Un autre exemple de mise en œuvre du procédé est illustré par la figure 6. La nature et les épaisseurs des matériaux mis en œuvre pour cet exemple sont essentiellement les mêmes que précédemment. Selon cet autre exemple, on fournit, à une étape a), une feuille de matériau électriquement conducteur 13. A une étape b) un masque est réalisé sur chacune des deux faces 13a, 13b de la feuille de matériau électriquement conducteur 13. Sur la première face 13a de la feuille de matériau électriquement conducteur 13, le film subit un traitement par photolithographie pour exposer une partie de la zone support 4, ainsi que des zones correspondant aux évidements 3. Sur la deuxième face 13b de la feuille de matériau électriquement conducteur 13, le film subit un traitement par encapsulation 11 is for example between 150 and 350 micrometers. Another example of implementation of the method is illustrated in FIG. 6. The nature and the thicknesses of the materials used for this example are essentially the same as above. According to this other example, in a step a), a sheet of electrically conductive material 13 is provided. In a step b) a mask is produced on each of the two faces 13a, 13b of the sheet of electrically conductive material 13. On the first face 13a of the sheet of electrically conductive material 13, the film is subjected to a photolithography treatment to expose part of the support zone 4, as well as zones corresponding to the recesses 3. On the second face 13b of the sheet of electrically conductive material 13, the film is processed by
photolithographie pour exposer les structures d’accrochage 14. Puis, les zones non protégées sont gravées. Autrement dit, selon cet exemple de procédé, l’épaisseur Y% gravée à partir de la deuxième face principale 13b correspond à celle souhaitée pour réaliser les structures d’accrochage et l’épaisseur X% gravée à partir de la première face principale 13a correspond à celle souhaitée pour réaliser la cavité 12 et traverser la feuille matériau électriquement conducteur 13 au niveau des évidements 3. photolithography to expose the hanging structures 14. Then, the unprotected areas are engraved. In other words, according to this exemplary method, the thickness Y% etched from the second main face 13b corresponds to that desired for producing the attachment structures and the thickness X% etched from the first main face 13a corresponds to that desired for producing the cavity 12 and passing through the sheet of electrically conductive material 13 at the level of the recesses 3.
Les étapes suivantes c) et d) sont essentiellement les mêmes que celles décrites en relation avec la figure 5. The following steps c) and d) are essentially the same as those described in relation to FIG. 5.
Un autre exemple de mise en œuvre du procédé est illustré par la figure 7. La nature et les épaisseurs des matériaux mis en œuvre pour cet autre exemple sont essentiellement les mêmes que pour les exemples précédents. Selon cet autre exemple, on fournit, à une étape a), une feuille de matériau électriquement conducteur 13. A une étape b) un masque est réalisé sur chacune des deux faces principales 13a, 13b de la feuille de matériau électriquement conducteur 13. Sur chacune des faces principales 13a, 13b, le film subit un traitement par Another example of implementation of the method is illustrated in FIG. 7. The nature and the thicknesses of the materials used for this other example are essentially the same as for the previous examples. According to this other example, there is provided, in a step a), a sheet of electrically conductive material 13. In a step b) a mask is produced on each of the two main faces 13a, 13b of the sheet of electrically conductive material 13. On each of the main faces 13a, 13b, the film is treated by
photolithographie, identique ou similaire à ceux déjà décrits, pour n’exposer qu’une partie correspondant à la zone support 4, sur la première face principale 13a de la feuille de matériau électriquement conducteur 13. Eventuellement, des zones du film présent sur la deuxième face principale 13b sont également retirées afin de réaliser des structures d’accrochage 14. Une partie de la zone support 4 est alors gravée sur une certaine profondeur de la feuille de matériau électriquement conducteur 13, pour former la cavité 12. De même, les éventuelles structures
d’accrochage 14 sont aussi gravées dans l’épaisseur de la feuille de matériau électriquement conducteur 13. Les masques sont ensuite retirés. photolithography, identical or similar to those already described, to expose only a part corresponding to the support zone 4, on the first main face 13a of the sheet of electrically conductive material 13. Possibly, zones of the film present on the second main face 13b are also removed in order to produce attachment structures 14. Part of the support zone 4 is then etched over a certain depth of the sheet of electrically conductive material 13, to form the cavity 12. Similarly, any structures attachment 14 are also etched in the thickness of the sheet of electrically conductive material 13. The masks are then removed.
A une étape c), un nouveau masque est réalisé sur chacune des deux faces 13a, In a step c), a new mask is produced on each of the two faces 13a,
13b de la feuille de matériau électriquement conducteur 13, à l’aide d’un traitement par photo lithographie, identique ou similaire à ceux déjà décrits, pour n’exposer qu’une partie de la première face principale 13a de la feuille de matériau électriquement conducteur 13, au niveau des régions où l’on souhaite réaliser les évidements 3, pour structurer les supports 2 avec leur zone support 4, leurs zones de connexion 5, leurs zones de report 6 et leur portions conductrices 9. Les étapes suivantes d) et e) sont essentiellement les mêmes que celles décrites en relations avec la figure 5 ou la figure 6.
13b of the sheet of electrically conductive material 13, using a treatment by photo lithography, identical or similar to those already described, to expose only part of the first main face 13a of the sheet of electrically material conductor 13, at the regions where it is desired to make the recesses 3, to structure the supports 2 with their support zone 4, their connection zones 5, their transfer zones 6 and their conductive portions 9. The following steps d) and e) are essentially the same as those described in connection with FIG. 5 or FIG. 6.
Claims
1. Procédé de fabrication d’un support (2) flexible de circuit intégré, comprenant : 1. Method for manufacturing a flexible integrated circuit support (2), comprising:
- la fourniture d’une feuille de matériau électriquement conducteur (13) ayant une première (13a) et une deuxième (13b) faces principales, - the supply of a sheet of electrically conductive material (13) having a first (13a) and a second (13b) main faces,
- la réalisation d’au moins deux zones de connexion (5) dans la feuille de matériau électriquement conducteur (13), délimitées au moins partiellement par des évidements (3) réalisés sur la totalité de l’épaisseur de la feuille de matériau conducteur (13), - the production of at least two connection zones (5) in the sheet of electrically conductive material (13), delimited at least partially by recesses (3) made over the entire thickness of the sheet of conductive material ( 13),
caractérisé par le fait qu’il comprend en outre la réalisation par gravure chimique des évidements (3) et d’au moins une cavité (12), la cavité (12) résultant de la gravure de la feuille de matériau conducteur (13) à partir de sa première face principale (13a), la feuille de matériau conducteur (13) ayant alors une épaisseur moindre au niveau de cette cavité (12), que sur d’autres zones de la feuille de matériau conducteur (13). characterized in that it further comprises the production by chemical etching of the recesses (3) and of at least one cavity (12), the cavity (12) resulting from the etching of the sheet of conductive material (13) to from its first main face (13a), the sheet of conductive material (13) then having a thickness less at this cavity (12), than on other zones of the sheet of conductive material (13).
2. Procédé selon la revendication 1, dans lequel la gravure chimique des évidements (3) est réalisée à partir des première (13a) et deuxième (13b) faces principales de la feuille de matériau conducteur (13). 2. Method according to claim 1, wherein the chemical etching of the recesses (3) is carried out from the first (13a) and second (13b) main faces of the sheet of conductive material (13).
3. Procédé selon la revendication 1 ou 2, dans lequel la gravure chimique est réalisée sur X% de l’épaisseur de la feuille de matériau conducteur (13) à partir de la première face principale (13a) de la feuille de matériau conducteur (13) et Y% de l’épaisseur de la feuille de matériau conducteur (13) à partir de la deuxième face principale (13b) de la feuille de matériau conducteur (13), la somme de X% et Y% étant supérieure ou égale à 100%. 3. Method according to claim 1 or 2, wherein the chemical etching is carried out on X% of the thickness of the sheet of conductive material (13) from the first main face (13a) of the sheet of conductive material ( 13) and Y% of the thickness of the sheet of conductive material (13) from the second main face (13b) of the sheet of conductive material (13), the sum of X% and Y% being greater than or equal 100%.
4. Procédé selon l’une des revendications précédentes, dans lequel les évidements (3) sont découpés par gravure chimique, dans l’épaisseur de la feuille de matériau conducteur (13) essentiellement simultanément à la réalisation de la cavité (12), à l’aide d’un contrôle local des paramètres de gravure. 4. Method according to one of the preceding claims, wherein the recesses (3) are cut by chemical etching, in the thickness of the sheet of conductive material (13) essentially simultaneously with the production of the cavity (12), using local control of the burning parameters.
5. Procédé selon la revendication 4, dans lequel la gravure chimique des évidements (3) et de la cavité (12) est réalisée, de rouleau à rouleau, dans au moins une chambre de gravure et les paramètres de gravure comprennent la vitesse de défilement de la feuille de matériau conducteur (13) dans la chambre de gravure.
5. Method according to claim 4, in which the chemical etching of the recesses (3) and of the cavity (12) is carried out, from roll to roll, in at least one etching chamber and the etching parameters include the speed of movement of the sheet of conductive material (13) in the etching chamber.
6. Procédé selon la revendication 4 ou 5, dans lequel la gravure chimique des évidements (3) et de la cavité (12) est réalisée dans au moins une chambre de gravure, de rouleau à rouleau, et les paramètres de gravure comprennent la pression de pulvérisation, la température et la concentration appliquée dans la chambre de gravure. 6. The method of claim 4 or 5, wherein the chemical etching of the recesses (3) and the cavity (12) is carried out in at least one etching chamber, from roll to roll, and the etching parameters include the pressure spray, temperature and concentration applied in the etching chamber.
7. Procédé selon l’une des revendications précédentes, dans lequel des structures d’accrochage (14) sont réalisées sur la deuxième (13b) face principale, au niveau d’au moins certains évidements (3) découpés dans l’épaisseur de la feuille de matériau conducteur (13). 7. Method according to one of the preceding claims, in which attachment structures (14) are produced on the second (13b) main face, at the level of at least certain recesses (3) cut in the thickness of the sheet of conductive material (13).
8. Procédé selon l’une des revendications précédentes, comprenant une étape de fixation d’au moins un circuit intégré (7) dans la cavité (12) et une étape de connexion électrique du circuit intégré (7) à au moins deux zones de connexion (5). 8. Method according to one of the preceding claims, comprising a step of fixing at least one integrated circuit (7) in the cavity (12) and a step of electrically connecting the integrated circuit (7) to at least two zones of connection (5).
9. Support flexible de circuit intégré réalisé conformément au procédé selon l’une des revendications précédentes, comprenant une feuille de matériau électriquement conducteur (13) ayant une première (13a) et une deuxième (13b) faces principales, avec une zone support et au moins deux zones de connexion (5), ces zones de connexion (5) étant délimitées au moins partiellement par des évidements (3) réalisés sur la totalité de l’épaisseur de la feuille de matériau conducteur (13), 9. Flexible integrated circuit support produced according to the method according to one of the preceding claims, comprising a sheet of electrically conductive material (13) having a first (13a) and a second (13b) main faces, with a support area and at at least two connection zones (5), these connection zones (5) being delimited at least partially by recesses (3) made over the entire thickness of the sheet of conductive material (13),
caractérisé par le fait qu’il comprend en outre une cavité (12) ménagée sur la première face principale (13a) de la feuille de matériau conducteur (13), au niveau de laquelle la feuille de matériau conducteur (13) a une épaisseur moindre que sur d’autres zones (5, 6) de la feuille de matériau conducteur (13). characterized in that it further comprises a cavity (12) formed on the first main face (13a) of the sheet of conductive material (13), at the level of which the sheet of conductive material (13) has a reduced thickness than on other zones (5, 6) of the sheet of conductive material (13).
10. Support selon la revendication 9, comprenant un matériau d’encapsulation (11) recouvrant au moins un circuit intégré (7) logé dans une cavité (12) ménagée dans la feuille de matériau conducteur (13), la surface sur laquelle le matériau d’encapsulation (11) est dispensé étant délimitée par au moins certains évidements (3). 10. Support according to claim 9, comprising an encapsulation material (11) covering at least one integrated circuit (7) housed in a cavity (12) formed in the sheet of conductive material (13), the surface on which the material encapsulation (11) is dispensed with being delimited by at least certain recesses (3).
11. Support selon la revendication 9 ou 10, comprenant des structures d’accrochage (14) réalisées sur la deuxième (13b) face principale, au niveau d’au
moins certains évidements (3) découpés dans l’épaisseur de la feuille de matériau conducteur. 11. Support according to claim 9 or 10, comprising attachment structures (14) produced on the second (13b) main face, at the level of minus certain recesses (3) cut in the thickness of the sheet of conductive material.
12. Module comprenant un support réalisé conformément au procédé selon l’une des revendications 1 à 8, ainsi qu’un circuit intégré (7) logé dans une cavité (12) et connecté électriquement aux zones de connexion (5). 12. Module comprising a support produced in accordance with the method according to one of claims 1 to 8, as well as an integrated circuit (7) housed in a cavity (12) and electrically connected to the connection zones (5).
13. Module selon la revendication 12, comprenant un matériau 13. Module according to claim 12, comprising a material
d’encapsulation (11) recouvrant le circuit intégré (7), et dans lequel la cavité (12) a une profondeur (P) adaptée pour que l’épaisseur (E) totale maximale de la feuille de matériau conducteur (13), du circuit intégré (7) et du matériau d’encapsulation (11) soit comprise entre 150 et 350 micromètres et encapsulation (11) covering the integrated circuit (7), and in which the cavity (12) has a depth (P) adapted so that the maximum total thickness (E) of the sheet of conductive material (13), integrated circuit (7) and of the encapsulation material (11) is between 150 and 350 micrometers and
préférentiellement inférieure ou égale à 200 micromètres.
preferably less than or equal to 200 micrometers.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1871795A FR3089055B1 (en) | 2018-11-23 | 2018-11-23 | A method of manufacturing a flexible integrated circuit carrier, flexible integrated circuit carrier, a module comprising a flexible carrier and an integrated circuit. |
FR1871795 | 2018-11-23 |
Publications (1)
Publication Number | Publication Date |
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WO2020104759A1 true WO2020104759A1 (en) | 2020-05-28 |
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PCT/FR2019/052797 WO2020104759A1 (en) | 2018-11-23 | 2019-11-25 | Method for manufacturing a flexible integrated circuit support, flexible integrated circuit support, module comprising a flexible support and an integrated circuit |
Country Status (2)
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FR (1) | FR3089055B1 (en) |
WO (1) | WO2020104759A1 (en) |
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FR3089055B1 (en) | 2021-08-27 |
FR3089055A1 (en) | 2020-05-29 |
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