WO2020103195A1 - Single crystal battery wafer cutting method , single crystal battery wafer, photovoltaic assembly and preparation method - Google Patents

Single crystal battery wafer cutting method , single crystal battery wafer, photovoltaic assembly and preparation method

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Publication number
WO2020103195A1
WO2020103195A1 PCT/CN2018/119518 CN2018119518W WO2020103195A1 WO 2020103195 A1 WO2020103195 A1 WO 2020103195A1 CN 2018119518 W CN2018119518 W CN 2018119518W WO 2020103195 A1 WO2020103195 A1 WO 2020103195A1
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WIPO (PCT)
Prior art keywords
single crystal
wafer
edge
cutting
cell
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PCT/CN2018/119518
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French (fr)
Chinese (zh)
Inventor
尹丙伟
孙俊
丁士引
杨蕾
周福深
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成都晔凡科技有限公司
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Publication of WO2020103195A1 publication Critical patent/WO2020103195A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a cutting method for single crystal battery slices.
  • the invention also relates to a single crystal cell sheet, a method for preparing a photovoltaic module, and a photovoltaic module manufactured by this method.
  • both half-chip photovoltaic module technology and shingled photovoltaic module technology can increase the power of the module. Both the half-chip photovoltaic module and shingled photovoltaic module need to be cut for the whole piece of solar cells.
  • the cutting method of single-crystal silicon wafers of solar cells is mainly to align the growth ridge line of the single-crystal silicon round rod of the ⁇ 100> crystal direction grown by the Czochralski method as the raw material with the ridge line of the crystal support on the square machine crystal support
  • the obtained monocrystalline silicon square rod is rounded by a spheronizer to obtain a square rod of uniform size, and then the square rod is subjected to wire cutting and slicing to obtain a monocrystalline silicon wafer for battery production.
  • the four edge crystal orientations of the cut single crystal silicon wafers are ⁇ 100> ⁇ 2 °.
  • the cutting method of the battery sheet is often carried out by mechanical cutting or laser cutting, but cutting with these methods will cause a certain loss to the conversion efficiency of the battery sheet to varying degrees.
  • the current laser cutting method of solar cells mainly uses focused high-power laser beams to irradiate the cells.
  • the beams are absorbed.
  • the temperature of the material at the irradiation point rises sharply.
  • the temperature reaches the boiling point After that, the material begins to vaporize and form voids.
  • a pre-cut mark is formed first, and then the split is performed according to the direction of the cut. Because laser cutting has the advantages of narrow cutting seam, fast cutting speed, good vertical edge of the cutting seam, and no tool wear, it is widely used in solar cell slicing of photovoltaic modules.
  • the object of the present invention is to provide an improved cutting method for a single crystal cell sheet, a method for preparing a photovoltaic module, and a photovoltaic module manufactured by this method of preparation, by which the cutting battery can be reduced
  • the loss of efficiency during filming increases the overall power of the component.
  • Step of providing raw materials provide wafer rods with crystal orientation ⁇ 100> as raw materials;
  • the angle adjustment step make the growth ridge of the wafer rod and the adjacent ridge of the wafer holder be separated by 45 degrees in the circumferential direction;
  • Open slicing step Open and slice the wafer rod to obtain a single crystal silicon wafer, the crystal orientation of the four edges of the single crystal silicon wafer is ⁇ 110>;
  • Step of making a battery chip the single crystal silicon chip is made into a single crystal cell chip.
  • the cutting method includes the following steps:
  • the step of cutting out the weakened part cutting out the weakened part perpendicular to the edge of the single crystal cell;
  • Splitting step applying mechanical stress, the single crystal cell splits at the weakened portion in a direction perpendicular to the weakened portion of the edge.
  • the invention cuts a weakened part perpendicular to the edge at the edge of the single crystal cell, and then slightly applies mechanical stress to make the cell split naturally along a straight line , And the split direction of the battery sheet, that is, the direction of the cutting seam between the two small battery sheets formed by cutting is perpendicular to the edge. This can reduce the efficiency loss of the solar cell during the high-temperature cutting process and increase the overall power of the component.
  • the weakened portion may be an opening or a cut.
  • the cut may be a continuous or segmented score.
  • another weakened portion in the step of cutting out the weakened portion, another weakened portion may be cut opposite to the weakened portion on another edge parallel to the edge. That is, a weakened portion is cut at each end of the cutting slit, and then mechanical stress is applied to split the single crystal cell.
  • the steps of cutting out the weakened portion and applying mechanical stress to split the single crystal cell sheet can be repeated until a small-sized cell sheet of a desired size is obtained.
  • the wafer rod in the step of adjusting the angle, may be placed on the wafer support of the square-cutting machine before the square-opening, so that the growth edge of the wafer rod The line coincides with the ridge line of the wafer holder of the square machine, and then the wafer rod is rotated clockwise or counterclockwise by 45 degrees.
  • the single crystal silicon wafer may undergo surface texturing, diffusion bonding, removal of phosphorosilicate glass, deposition of anti-reflection film, and screen printing.
  • AlBSF aluminum back field
  • the single crystal silicon wafer undergoes steps such as texturing, diffusion, etching, back passivation, coating, laser engraving, printing and sintering, etc. Made into PERC cells.
  • the single crystal silicon wafer in the cell manufacturing step, is subjected to texturing, diffusion bonding, etching to remove borosilicate glass, tunnel junction preparation, ion implantation, and annealing , Cleaning, coating, screen printing and sintering are made into TopCon cells.
  • the single crystal silicon wafer in the battery cell manufacturing step, becomes a texturing, amorphous silicon thin film lamination, transparent conductive film lamination, printed electrode fabrication and other steps to become Heterojunction cells.
  • a method for manufacturing a photovoltaic module includes the following steps: providing a wafer rod with a crystal orientation of ⁇ 100> as a raw material; The growth ridge line and the adjacent wafer ridge line of the square machine wafer are spaced at an angle of 45 degrees along the circumferential direction, and then the wafer rod is squared and sliced to obtain a monocrystalline silicon wafer.
  • the crystal orientation of the four edges is ⁇ 110>; the single crystal silicon wafer is made into a single crystal cell; the weakened part is cut perpendicular to the edge of the single crystal cell, and then mechanical stress is applied, then the single crystal At the weakened portion, the cell sheet splits into small pieces of cell sheet in a direction perpendicular to the edge; a photovoltaic module is composed of a plurality of the small pieces of cell sheet.
  • a single crystal battery slice wherein the crystal orientation of the four edges of the single crystal battery slice is ⁇ 110> and is perpendicular to the edge of the single crystal battery slice There is a weakened part of a certain length.
  • the weakened portion may be an opening or a cut.
  • the cut may be a continuous or segmented score.
  • another weakened portion opposite to the weakened portion and on the same straight line as the weakened portion may be provided on another edge parallel to the edge.
  • a photovoltaic module is also proposed.
  • the photovoltaic module is manufactured by the above-mentioned preparation method for a photovoltaic module.
  • the photovoltaic module may be a half photovoltaic module or a shingled photovoltaic module.
  • the invention adjusts the silicon wafer manufacturing process, especially the square edge crystal orientation, so that the direction of the predetermined cutting slit of the manufactured solar cell and the crystal ⁇ 110>
  • the crystal direction is parallel, and then a weakened part of a certain depth and length is cut at one or both ends of the cutting slit by, for example, mechanical cutting or laser cutting, and then the mechanical slice is applied to split the battery sheet along the predetermined cutting slit, Therefore, the purpose of low-temperature slicing is achieved, the damage of the battery chip at high temperature is reduced, and the efficiency of the small battery chip after cutting is improved, thereby increasing the power of the assembly.
  • FIG. 1 schematically shows a manufacturing process of a photovoltaic module, in which a cell sheet is cut by a cutting method according to a preferred embodiment of the present invention
  • Fig. 2 shows a wafer rod as a raw material in a schematic perspective view
  • FIG. 3 shows in a schematic perspective view a wafer machine wafer holder for the wafer rod shown in FIG. 2;
  • FIG. 4 shows a schematic perspective view of a single-crystal silicon wafer obtained after square cutting and slicing, and the crystal orientation of the four edges of the single-crystal silicon wafer is ⁇ 110>;
  • FIG. 5 shows a schematic perspective view of a single crystal cell made of the single crystal silicon chip shown in FIG. 4, and the crystal directions of the four edges of the single crystal cell are ⁇ 110>;
  • Fig. 6a shows a schematic top view of a single crystal cell sheet waiting to be cut according to a preferred embodiment of the present invention
  • Fig. 6b shows a single crystal cell slice cut according to a preferred embodiment of the present invention in a schematic top view.
  • FIG. 1 shows a manufacturing process of a photovoltaic module, in which the cells used to compose the photovoltaic module are cut by the cutting method according to the preferred embodiment of the present invention.
  • the wafer rod 1 in the ⁇ 100> crystal direction as a raw material.
  • the wafer rod 1 has a plurality of growth ridges 2 along the direction of its central axis.
  • the substantially cylindrical square crystal support 3 has a plurality of crystal support ridges 4 along its central axis.
  • the growth ridge 2 of the wafer rod 1 is overlapped with the ridge ridge 4 of the square wafer support 3 shown in FIG. 3, and then the wafer rod 1 is clockwise or By rotating counterclockwise by 45 degrees, the growth ridgeline 2 of the wafer rod 1 and the wafer ridgeline 4 adjacent to the growth ridgeline of the square wafer support 3 are circumferentially spaced at an angle of 45 degrees.
  • the wafer rod 1 is squared and polished to obtain square rods, and then the square rods obtained after squared and polished are sliced.
  • the crystal orientation of each edge is ⁇ 110>.
  • the single crystal silicon wafer is subjected to surface texturing, cleaning, diffusion bonding, removal of phosphorous silicate glass, deposition of anti-reflective film and screen printing to make a single crystal cell sheet 5, as follows:
  • the surface of the single crystal silicon wafer is textured, so that the single crystal silicon wafer can obtain a good suede structure, which can increase the specific surface area to accept more photons (energy), while reducing the reflection of incident light;
  • Phosphorus oxychloride reacts with the single crystal silicon wafer to obtain phosphorus atoms. After a certain period of time, the phosphorus atoms enter the surface layer of the single crystal silicon wafer, and penetrate into the single crystal silicon wafer through the gaps between the silicon atoms to form The interface between the N-type semiconductor and the P-type semiconductor is completed, thereby completing the diffusion bonding process and realizing the conversion of light energy to electrical energy;
  • the diffusion junction forms a short-circuit channel at the edge of the single-crystal silicon wafer, the photogenerated electrons collected on the front of the PN junction will flow along the edge of the phosphorus-diffused area to the back of the PN junction, resulting in a short circuit.
  • Plasma etching will The edge PN junction is removed by etching to avoid short circuit caused by the edge;
  • the diffusion bonding process will form a layer of phosphorous silicate glass on the surface of the single crystal silicon wafer, the effect on the efficiency of the shingled battery can be reduced through the dephosphorization silicon glass process.
  • it in order to reduce the damage of the high temperature to the diffusion and the lattice, it can be increased Annealing process steps;
  • silicon nitride antireflection film In order to reduce the surface reflection of the single crystal silicon wafer and improve the conversion efficiency of the battery, it is necessary to deposit one or more layers of silicon nitride antireflection film, which can be passed through a chemical vapor deposition process such as PECVD (plasma enhanced chemical vapor deposition method) Complete anti-reflection film preparation;
  • PECVD plasma enhanced chemical vapor deposition method
  • the back electrode, back electric field and front grid of the solar cell are screen printed, and the manufacturing process of the single crystal cell is completed through the sintering process to obtain the AlBSF cell.
  • the monocrystalline silicon wafer may also be made into other types of monocrystalline solar cells, for example, it may undergo texturing, diffusion, etching, back passivation, coating, laser engraving, Printed and sintered into PERC cells, or can be made into TopCon cells through texturing, diffusion bonding, etched borosilicate glass, tunnel junction preparation, ion implantation, annealing, cleaning, coating, screen printing and sintering, etc.
  • the single crystal cell sheet produces weakened portions, such as openings or cuts, at one or both ends of the predetermined cutting line 6 by mechanical cutting or laser cutting, such as cutting a cut 7 of a certain depth and length (such as As shown in FIG. 6a, the cut 7 has a length l), and the cut 7 can be a continuous score or a discontinuous score, and then a slight mechanical stress is applied, according to the structural characteristics of the crystalline silicon ⁇ 110> crystal direction natural lobes The single crystal cell will easily and neatly split along the predetermined cutting line 6 (as shown in Figure 6b).
  • the photovoltaic module is composed of the cut pieces of solar cells.
  • FIG. 4 a single-crystal silicon wafer obtained by square cutting and slicing is schematically shown, and the four edges of the single-crystal silicon wafer have a crystal orientation of ⁇ 110>.
  • FIG. 5 the single crystal silicon wafer shown in FIG. 4 is produced through processes such as texturing, cleaning, diffusion bonding, removal of phosphorosilicate glass, deposition of anti-reflection film, and screen printing.
  • the crystal directions of the four edges of the single crystal cell slice are also ⁇ 110>.
  • FIG. 6a a single-crystal cell sheet waiting to be cut is schematically shown, the single-crystal cell sheet is made by the above method, the front and back surfaces of the cell sheet are substantially square, and the crystal directions of its four edges are ⁇ 110> ,
  • the front is formed with a pattern, and there are a plurality of predetermined cutting lines 6 parallel to two edges, for example, left and right edges, on the front or the back.
  • a weakened portion is formed at one end or both ends of a predetermined cutting line 6, for example, a cut 7 is formed, and the predetermined cutting line is perpendicular to the upper and lower edges of the single crystal cell.
  • Fig. 6b schematically shows a single crystal cell slice cut along a predetermined cutting line 6.
  • the cut 7 can make the single crystal cell sheet easily along the predetermined cutting line 6 And neatly split, greatly reducing the debris and improving the slicing efficiency.

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Abstract

Provided are a cutting method for single crystal battery wafer, single crystal battery wafer, a photovoltaic assembly and a preparation method, the single crystal battery wafer is prepared in the following manner: providing a wafer rod (1) with crystal orientation <100> as raw materials; making a growth ridge line (2) of the wafer rod (1) and the adjacent crystal holder ridge line (4) of a squarer crystal holder (3) spaced at an angle of 45 degrees in the circumferential direction, then squaring and slicing the wafer rod (1) to obtain a single crystal silicon wafer, the crystal orientation of the four edges of the single silicon wafer is <110>; preparing the single crystal silicon wafer into a single crystal battery wafer (5), characterized in that, the cutting method comprises the following steps: cutting a weakened portion perpendicular to an edge of the single crystal battery wafer; applying mechanical stress to split the single crystal battery wafer in the weakened portion direction perpendicular to the edge.

Description

单晶电池片切割方法、单晶电池片、光伏组件及制备方法Single crystal cell cutting method, single crystal cell, photovoltaic component and preparation method 技术领域Technical field
本发明涉及一种用于单晶电池片的切割方法。此外，本发明还涉及一种单晶电池片、一种光伏组件的制备方法和一种通过这种制备方法制成的光伏组件。The invention relates to a cutting method for single crystal battery slices. In addition, the invention also relates to a single crystal cell sheet, a method for preparing a photovoltaic module, and a photovoltaic module manufactured by this method.
背景技术Background technique
随着全球煤炭、石油、天然气等常规化石能源消耗速度加快，生态环境不断恶化，特别是温室气体排放导致日益严峻的全球气候变化，人类社会的可持续发展已经受到严重威胁。世界各国纷纷制定各自的能源发展战略，以应对常规化石能源资源的有限性和开发利用带来的环境问题。太阳能凭借其可靠性、安全性、广泛性、长寿性、环保性、资源充足性的特点已成为最重要的可再生能源之一，有望成为未来全球电力供应的主要支柱。As the global consumption of conventional fossil energy sources such as coal, oil, and natural gas accelerates, the ecological environment continues to deteriorate, and in particular, greenhouse gas emissions have led to increasingly severe global climate change, and the sustainable development of human society has been seriously threatened. Countries around the world have formulated their own energy development strategies to deal with the environmental problems caused by the limitation of conventional fossil energy resources and development and utilization. Solar energy has become one of the most important renewable energy sources due to its reliability, safety, extensiveness, longevity, environmental protection, and resource adequacy, and is expected to become the main pillar of global power supply in the future.
在大力推广和使用太阳能绿色能源的背景下，半片光伏组件技术和叠瓦光伏组件技术都能提升组件功率，半片光伏组件及叠瓦光伏组件制作时都需要对太阳能电池片整片进行切割。In the context of vigorous promotion and use of solar green energy, both half-chip photovoltaic module technology and shingled photovoltaic module technology can increase the power of the module. Both the half-chip photovoltaic module and shingled photovoltaic module need to be cut for the whole piece of solar cells.
目前对于太阳能电池单晶硅片的切割方式，主要是将作为原料的直拉法生长<100>晶向的单晶硅圆棒的生长棱线与开方机晶托上的晶托棱线对齐后进行开方，所获得的单晶硅方棒再经过滚圆机滚圆，由此获得均一尺寸方棒，再将这种方棒进行线切割切片，从而获得生产电池用的单晶硅片。按照关于太阳能电池用硅单晶切割片的国家标准GB/T 26071-2010，切割好的单晶硅片的四个边缘晶向为<100>±2°。At present, the cutting method of single-crystal silicon wafers of solar cells is mainly to align the growth ridge line of the single-crystal silicon round rod of the <100> crystal direction grown by the Czochralski method as the raw material with the ridge line of the crystal support on the square machine crystal support After the preparation, the obtained monocrystalline silicon square rod is rounded by a spheronizer to obtain a square rod of uniform size, and then the square rod is subjected to wire cutting and slicing to obtain a monocrystalline silicon wafer for battery production. According to the national standard GB / T26071-2010 for silicon single crystal dicing wafers for solar cells, the four edge crystal orientations of the cut single crystal silicon wafers are <100> ± 2 °.
目前对于电池片的切割方法则常采用机械切割或者激光切割的方法进行，但采用这些方法切割都会不同程度对电池片转化效率造成一定损失。At present, the cutting method of the battery sheet is often carried out by mechanical cutting or laser cutting, but cutting with these methods will cause a certain loss to the conversion efficiency of the battery sheet to varying degrees.
特别是，当前太阳能电池片的激光切割方法，主要是利用聚焦的高功率激光束照射到电池片，光束被吸收，当激光超过阀值功率密度后引起照射点材料温度急剧上升，当温度达到沸点后，材料开始气化，并形成空隙，随着激光束与太阳电池片的相对移动，先形成预切痕，然后按照切痕的方向进行裂片。由于激光切割具有切割缝窄、切割速度快、切割缝边缘垂直度好、无刀具磨损等优点，被广泛应用于光伏组件的太阳能电池切片，但随着太阳能电池片技术的进步，各种高效电池采取不同钝化工艺减小界面载流子复合，如PERC(钝化发射极背面接触电池)/TopCon(隧穿氧化层钝化接触电池)采用氮化物或者氧化薄膜，SHJ(硅基异质结太阳能电池)电池片采用低温非晶硅薄膜钝化工艺，高温切割对电池片钝化膜造成损害，效率损失变大。In particular, the current laser cutting method of solar cells mainly uses focused high-power laser beams to irradiate the cells. The beams are absorbed. When the laser exceeds the threshold power density, the temperature of the material at the irradiation point rises sharply. When the temperature reaches the boiling point After that, the material begins to vaporize and form voids. With the relative movement of the laser beam and the solar cell sheet, a pre-cut mark is formed first, and then the split is performed according to the direction of the cut. Because laser cutting has the advantages of narrow cutting seam, fast cutting speed, good vertical edge of the cutting seam, and no tool wear, it is widely used in solar cell slicing of photovoltaic modules. However, with the advancement of solar cell technology, various high-efficiency batteries Different passivation processes are adopted to reduce interface carrier recombination, such as PERC (passivated emitter back contact battery) / TopCon (tunnel oxide passivation contact battery) using nitride or oxide film, SHJ (silicon-based heterojunction) (Solar cell) The solar cell adopts a low-temperature amorphous silicon thin film passivation process. High-temperature cutting causes damage to the solar cell passivation film, and the efficiency loss becomes larger.
鉴于此，亟需改进用于单晶电池片的切割方法。In view of this, there is an urgent need to improve the cutting method for single crystal cells.
发明内容Summary of the invention
本发明的目的是，提供一种改进的用于单晶电池片的切割方法、一种光伏组件的制备方法和一种通过这种制备方法制成的光伏组件，通过该切割方法可减少切割电池片时的效率损失，提升组件的整体功率。The object of the present invention is to provide an improved cutting method for a single crystal cell sheet, a method for preparing a photovoltaic module, and a photovoltaic module manufactured by this method of preparation, by which the cutting battery can be reduced The loss of efficiency during filming increases the overall power of the component.
上述目的通过根据本发明的用于单晶电池片的切割方法实现，其中，所述单晶电池片通过以下步骤制备：The above object is achieved by the cutting method for a single crystal battery sheet according to the present invention, wherein the single crystal battery sheet is prepared by the following steps:
提供原料步骤：提供晶向为<100>的晶圆棒作为原料；Step of providing raw materials: provide wafer rods with crystal orientation <100> as raw materials;
角度调整步骤：使所述晶圆棒的生长棱线与开方机晶托的相邻的晶托棱线沿周向间隔45度角；The angle adjustment step: make the growth ridge of the wafer rod and the adjacent ridge of the wafer holder be separated by 45 degrees in the circumferential direction;
开方切片步骤：将所述晶圆棒开方、切片，获得单晶硅片，所述单晶硅片的四个边缘的晶向为<110>；Open slicing step: Open and slice the wafer rod to obtain a single crystal silicon wafer, the crystal orientation of the four edges of the single crystal silicon wafer is <110>;
制电池片步骤：将所述单晶硅片制成为单晶电池片。Step of making a battery chip: the single crystal silicon chip is made into a single crystal cell chip.
所述切割方法包括如下步骤：The cutting method includes the following steps:
切割出削弱部分的步骤：垂直于所述单晶电池片的边缘切割出 削弱部分；The step of cutting out the weakened part: cutting out the weakened part perpendicular to the edge of the single crystal cell;
裂片步骤：施加机械应力，所述单晶电池片在所述削弱部分处沿着垂直于所述边缘的削弱部分方向裂开。Splitting step: applying mechanical stress, the single crystal cell splits at the weakened portion in a direction perpendicular to the weakened portion of the edge.
本发明根据硅晶体<110>晶向自然裂片的特性，在单晶电池片的边缘处垂直于所述边缘切割出削弱部分，再略施加机械应力就可以使电池片沿着一条直线自然裂开，且电池片的裂开方向、也即切割形成的两个小片电池片之间的切割缝的方向垂直于所述边缘。这样可以减少太阳电池在高温切割过程的效率损失，提升组件的整体功率。According to the characteristics of the silicon crystal <110> crystal direction natural split, the invention cuts a weakened part perpendicular to the edge at the edge of the single crystal cell, and then slightly applies mechanical stress to make the cell split naturally along a straight line , And the split direction of the battery sheet, that is, the direction of the cutting seam between the two small battery sheets formed by cutting is perpendicular to the edge. This can reduce the efficiency loss of the solar cell during the high-temperature cutting process and increase the overall power of the component.
根据本发明的一种优选实施方式，所述削弱部分可以为开口或者切痕。According to a preferred embodiment of the present invention, the weakened portion may be an opening or a cut.
根据本发明的一种优选实施方式，所述切痕可以为连续的或分段的刻痕。According to a preferred embodiment of the present invention, the cut may be a continuous or segmented score.
根据本发明的一种优选实施方式，可以在所述切割出削弱部分的步骤，还在与所述边缘平行的另一边缘上与所述削弱部分相对地切割出另一削弱部分。也就是，在切割缝的两端各切割出一个削弱部分，然后再施加机械应力，使所述单晶电池片裂开。According to a preferred embodiment of the present invention, in the step of cutting out the weakened portion, another weakened portion may be cut opposite to the weakened portion on another edge parallel to the edge. That is, a weakened portion is cut at each end of the cutting slit, and then mechanical stress is applied to split the single crystal cell.
根据本发明的一种优选实施方式，可以重复上述切割出削弱部分和施加机械应力使单晶电池片裂开的步骤，直至获得所需尺寸的小片电池片。According to a preferred embodiment of the present invention, the steps of cutting out the weakened portion and applying mechanical stress to split the single crystal cell sheet can be repeated until a small-sized cell sheet of a desired size is obtained.
根据本发明的一种优选实施方式，在所述角度调整步骤中，在开方之前，可以将所述晶圆棒放置在所述开方机晶托上，使所述晶圆棒的生长棱线与所述开方机晶托的晶托棱线重合，然后使所述晶圆棒顺时针或逆时针旋转45度。According to a preferred embodiment of the present invention, in the step of adjusting the angle, the wafer rod may be placed on the wafer support of the square-cutting machine before the square-opening, so that the growth edge of the wafer rod The line coincides with the ridge line of the wafer holder of the square machine, and then the wafer rod is rotated clockwise or counterclockwise by 45 degrees.
根据本发明的一种优选实施方式，在所述制电池片步骤中，所述单晶硅片可以经过表面制绒、扩散制结、去除磷硅玻璃、沉积减反射膜和丝网印刷等步骤制成为AlBSF(铝背场)电池片。According to a preferred embodiment of the present invention, in the cell manufacturing step, the single crystal silicon wafer may undergo surface texturing, diffusion bonding, removal of phosphorosilicate glass, deposition of anti-reflection film, and screen printing. Made into AlBSF (aluminum back field) cell.
在根据本发明的一种优选实施方式中，在所述制电池片步骤中，所述单晶硅片经过制绒、扩散、刻蚀、背钝化、镀膜、激光刻槽、 印刷烧结等步骤制成为PERC电池片。In a preferred embodiment according to the present invention, in the cell manufacturing step, the single crystal silicon wafer undergoes steps such as texturing, diffusion, etching, back passivation, coating, laser engraving, printing and sintering, etc. Made into PERC cells.
在根据本发明的一种优选实施方式中，在所述制电池片步骤中，所述单晶硅片经过制绒、扩散制结、刻蚀去硼硅玻璃、隧道结制备、离子注入、退火、清洗、镀膜、丝网印刷烧结等步骤制成为TopCon电池片。In a preferred embodiment according to the present invention, in the cell manufacturing step, the single crystal silicon wafer is subjected to texturing, diffusion bonding, etching to remove borosilicate glass, tunnel junction preparation, ion implantation, and annealing , Cleaning, coating, screen printing and sintering are made into TopCon cells.
在根据本发明的一种优选实施方式中，在所述制电池片步骤中，所述单晶硅片经过制绒、非晶硅薄膜层积、透明导电膜层积、印刷电极制等步骤成为异质结电池片。In a preferred embodiment according to the present invention, in the battery cell manufacturing step, the single crystal silicon wafer becomes a texturing, amorphous silicon thin film lamination, transparent conductive film lamination, printed electrode fabrication and other steps to become Heterojunction cells.
根据本发明的另一方面，还提出了一种用于光伏组件的制备方法，所述制备方法包括如下步骤：提供晶向为<100>的晶圆棒作为原料；使所述晶圆棒的生长棱线与开方机晶托的相邻的晶托棱线沿周向间隔45度角，然后将所述晶圆棒开方、切片，获得单晶硅片，所述单晶硅片的四个边缘的晶向为<110>；将所述单晶硅片制成为单晶电池片；垂直于所述单晶电池片的边缘切割出削弱部分，再施加机械应力，则所述单晶电池片在所述削弱部分处沿着垂直于所述边缘的方向裂开成小片电池片；由多个所述小片电池片组成光伏组件。According to another aspect of the present invention, a method for manufacturing a photovoltaic module is also proposed. The method includes the following steps: providing a wafer rod with a crystal orientation of <100> as a raw material; The growth ridge line and the adjacent wafer ridge line of the square machine wafer are spaced at an angle of 45 degrees along the circumferential direction, and then the wafer rod is squared and sliced to obtain a monocrystalline silicon wafer. The crystal orientation of the four edges is <110>; the single crystal silicon wafer is made into a single crystal cell; the weakened part is cut perpendicular to the edge of the single crystal cell, and then mechanical stress is applied, then the single crystal At the weakened portion, the cell sheet splits into small pieces of cell sheet in a direction perpendicular to the edge; a photovoltaic module is composed of a plurality of the small pieces of cell sheet.
根据本发明的另一方面，还提出了一种单晶电池片，其中，所述单晶电池片的四个边缘的晶向为<110>，并且在垂直于所述单晶电池片的边缘处具有一定长度的削弱部分。According to another aspect of the present invention, there is also provided a single crystal battery slice, wherein the crystal orientation of the four edges of the single crystal battery slice is <110> and is perpendicular to the edge of the single crystal battery slice There is a weakened part of a certain length.
根据本发明的一种优选实施方式，所述削弱部分可以为开口或者切痕。According to a preferred embodiment of the present invention, the weakened portion may be an opening or a cut.
根据本发明的一种优选实施方式，所述切痕可以为连续的或分段的刻痕。According to a preferred embodiment of the present invention, the cut may be a continuous or segmented score.
根据本发明的一种优选实施方式，在与所述边缘平行的另一边缘上可以具有与所述削弱部分相对且与所述削弱部分处于同一直线上的另一削弱部分。According to a preferred embodiment of the present invention, another weakened portion opposite to the weakened portion and on the same straight line as the weakened portion may be provided on another edge parallel to the edge.
根据本发明的另一方面，还提出了一种光伏组件，所述光伏组件通过上述用于光伏组件的制备方法制成。According to another aspect of the present invention, a photovoltaic module is also proposed. The photovoltaic module is manufactured by the above-mentioned preparation method for a photovoltaic module.
根据本发明的一种优选实施方式，所述光伏组件可为半片光伏 组件或叠瓦光伏组件。According to a preferred embodiment of the present invention, the photovoltaic module may be a half photovoltaic module or a shingled photovoltaic module.
如上所述，本发明根据硅晶体<110>晶向自然裂片的特性，通过调整硅片制作过程中，特别是开方的边缘晶向，使制作的太阳电池预定的切割缝的方向与晶体<110>晶向平行，然后通过例如机械切割或者激光切割在切割缝的一端或者两端切割出一定深度及长度的削弱部分，然后通过施加机械应力，使电池片沿着预定的切割缝裂开，从而达到了低温切片目的，减少了高温对电池片的损伤，提高了切割后小片电池片的效率，由此提升了组件的功率。As mentioned above, according to the characteristics of the silicon crystal <110> crystal orientation natural split, the invention adjusts the silicon wafer manufacturing process, especially the square edge crystal orientation, so that the direction of the predetermined cutting slit of the manufactured solar cell and the crystal < 110> The crystal direction is parallel, and then a weakened part of a certain depth and length is cut at one or both ends of the cutting slit by, for example, mechanical cutting or laser cutting, and then the mechanical slice is applied to split the battery sheet along the predetermined cutting slit, Therefore, the purpose of low-temperature slicing is achieved, the damage of the battery chip at high temperature is reduced, and the efficiency of the small battery chip after cutting is improved, thereby increasing the power of the assembly.
附图说明BRIEF DESCRIPTION
下面结合附图详细阐述本发明的优选实施方式。附图中：The preferred embodiments of the present invention are explained in detail below with reference to the drawings. In the drawings:
图1示意性示出了光伏组件的制备流程，其中电池片通过根据本发明的优选实施方式的切割方法进行切割；FIG. 1 schematically shows a manufacturing process of a photovoltaic module, in which a cell sheet is cut by a cutting method according to a preferred embodiment of the present invention;
图2以示意性立体图示出了作为原料的晶圆棒；Fig. 2 shows a wafer rod as a raw material in a schematic perspective view;
图3以示意性立体图示出了用于图2所示的晶圆棒的开方机晶托；FIG. 3 shows in a schematic perspective view a wafer machine wafer holder for the wafer rod shown in FIG. 2;
图4以示意性立体图示出了经过开方、切片后获得的单晶硅片，单晶硅片的四个边缘的晶向为<110>；FIG. 4 shows a schematic perspective view of a single-crystal silicon wafer obtained after square cutting and slicing, and the crystal orientation of the four edges of the single-crystal silicon wafer is <110>;
图5以示意性立体图示出了由图4所示的单晶硅片制作而成的单晶电池片，所述单晶电池片的四个边缘的晶向为<110>；FIG. 5 shows a schematic perspective view of a single crystal cell made of the single crystal silicon chip shown in FIG. 4, and the crystal directions of the four edges of the single crystal cell are <110>;
图6a以示意性俯视图示出了等待根据本发明一种优选实施方式的切割方法切割的单晶电池片；Fig. 6a shows a schematic top view of a single crystal cell sheet waiting to be cut according to a preferred embodiment of the present invention;
图6b以示意性俯视图示出了根据本发明一种优选实施方式的切割方法切割的单晶电池片。Fig. 6b shows a single crystal cell slice cut according to a preferred embodiment of the present invention in a schematic top view.
具体实施方式detailed description
为了克服现有技术的缺陷，发明人改进了光伏组件的制备。图1示出了光伏组件的制备流程，其中用来组成光伏组件的电池片通过根据本发明的优选实施方式的切割方法进行切割。In order to overcome the shortcomings of the prior art, the inventor improved the preparation of photovoltaic modules. FIG. 1 shows a manufacturing process of a photovoltaic module, in which the cells used to compose the photovoltaic module are cut by the cutting method according to the preferred embodiment of the present invention.
在提供原料步骤S1中，例如采用直拉法，生长<100>晶向的晶圆棒1，作为原料。如图2所示，晶圆棒1具有沿着其中央轴线方向的多条生长棱线2。In the raw material supply step S1, for example, a Czochralski method is used to grow a wafer rod 1 in the <100> crystal direction as a raw material. As shown in FIG. 2, the wafer rod 1 has a plurality of growth ridges 2 along the direction of its central axis.
如图3所示，大致圆柱形的开方机晶托3具有沿着其中央轴线方向的多条晶托棱线4。在角度调整步骤S2中，使所述晶圆棒1的生长棱线2与图3所示的开方机晶托3的晶托棱线4重合，然后使所述晶圆棒1顺时针或逆时针旋转45度，由此使所述晶圆棒1的生长棱线2与开方机晶托3的与该生长棱线相邻的晶托棱线4沿周向间隔45度角。As shown in FIG. 3, the substantially cylindrical square crystal support 3 has a plurality of crystal support ridges 4 along its central axis. In the angle adjustment step S2, the growth ridge 2 of the wafer rod 1 is overlapped with the ridge ridge 4 of the square wafer support 3 shown in FIG. 3, and then the wafer rod 1 is clockwise or By rotating counterclockwise by 45 degrees, the growth ridgeline 2 of the wafer rod 1 and the wafer ridgeline 4 adjacent to the growth ridgeline of the square wafer support 3 are circumferentially spaced at an angle of 45 degrees.
在开方切片步骤S3中，对所述晶圆棒1进行开方和打磨，从而获得方棒，再对开方和打磨后获得的方棒进行切片，这样制得的单晶硅片的四个边缘的晶向为<110>。In the square slicing step S3, the wafer rod 1 is squared and polished to obtain square rods, and then the square rods obtained after squared and polished are sliced. The crystal orientation of each edge is <110>.
在制电池片步骤S4中，对单晶硅片进行表面制绒、清洗、扩散制结、去除磷硅玻璃、沉积减反射膜和丝网印刷，制成为单晶电池片5，具体如下：In the cell manufacturing step S4, the single crystal silicon wafer is subjected to surface texturing, cleaning, diffusion bonding, removal of phosphorous silicate glass, deposition of anti-reflective film and screen printing to make a single crystal cell sheet 5, as follows:
对单晶硅片进行表面制绒，由此单晶硅片可获得良好的绒面结构，从而可增大比表面积以接受更多光子(能量)，同时减少入射光的反射；The surface of the single crystal silicon wafer is textured, so that the single crystal silicon wafer can obtain a good suede structure, which can increase the specific surface area to accept more photons (energy), while reducing the reflection of incident light;
清洗制绒时残留的液体，减少酸性和碱性物质对电池制结的影响；Cleaning the residual liquid during texturing to reduce the influence of acidic and alkaline substances on battery knotting;
通过三氯氧磷和单晶硅片进行反应，得到磷原子，经过一定时间，磷原子进入单晶硅片的表面层，并且通过硅原子之间的空隙向单晶硅片内部渗透扩散，形成了N型半导体和P型半导体的交界面，由此完成扩散制结工序，实现光能到电能的转换；Phosphorus oxychloride reacts with the single crystal silicon wafer to obtain phosphorus atoms. After a certain period of time, the phosphorus atoms enter the surface layer of the single crystal silicon wafer, and penetrate into the single crystal silicon wafer through the gaps between the silicon atoms to form The interface between the N-type semiconductor and the P-type semiconductor is completed, thereby completing the diffusion bonding process and realizing the conversion of light energy to electrical energy;
由于扩散制结在单晶硅片边缘形成了短路通道，PN结的正面所收集到的光生电子会沿着边缘扩散有磷的区域流到PN结的背面，而造成短路，经过等离子刻蚀将边缘PN结刻蚀去除，避免边缘造成短路；Since the diffusion junction forms a short-circuit channel at the edge of the single-crystal silicon wafer, the photogenerated electrons collected on the front of the PN junction will flow along the edge of the phosphorus-diffused area to the back of the PN junction, resulting in a short circuit. Plasma etching will The edge PN junction is removed by etching to avoid short circuit caused by the edge;
由于扩散制结工序会使单晶硅片表面形成一层磷硅玻璃，通过 去磷硅玻璃工序可减少对叠瓦电池效率的影响，此外为了减少高温对扩散及对晶格的损伤，可以增加退火工艺步骤；Since the diffusion bonding process will form a layer of phosphorous silicate glass on the surface of the single crystal silicon wafer, the effect on the efficiency of the shingled battery can be reduced through the dephosphorization silicon glass process. In addition, in order to reduce the damage of the high temperature to the diffusion and the lattice, it can be increased Annealing process steps;
为了减少单晶硅片表面反射，提高电池的转换效率，需要沉积一层或多层结构的氮化硅减反射膜，可通过如PECVD(等离子体增强化学的气相沉积法)的化学气相沉积工序完成减反射膜制备；In order to reduce the surface reflection of the single crystal silicon wafer and improve the conversion efficiency of the battery, it is necessary to deposit one or more layers of silicon nitride antireflection film, which can be passed through a chemical vapor deposition process such as PECVD (plasma enhanced chemical vapor deposition method) Complete anti-reflection film preparation;
丝网印刷太阳能电池的背电极、背电场及正面栅线，通过烧结工序完成单晶电池片的制作过程，获得AlBSF电池片。The back electrode, back electric field and front grid of the solar cell are screen printed, and the manufacturing process of the single crystal cell is completed through the sintering process to obtain the AlBSF cell.
替代地，在制电池片步骤S4中，所述单晶硅片也可以制成为其他类型的单晶电池片，例如可以经过制绒、扩散、刻蚀、背钝化、镀膜、激光刻槽、印刷烧结等步骤制成为PERC电池片，或者可以经过制绒、扩散制结、刻蚀去硼硅玻璃、隧道结制备、离子注入、退火、清洗、镀膜、丝网印刷烧结等步骤制成为TopCon电池片，或者可以经过制绒、非晶硅薄膜层积、透明导电膜层积、印刷电极等步骤制成为异质结电池片。Alternatively, in the cell manufacturing step S4, the monocrystalline silicon wafer may also be made into other types of monocrystalline solar cells, for example, it may undergo texturing, diffusion, etching, back passivation, coating, laser engraving, Printed and sintered into PERC cells, or can be made into TopCon cells through texturing, diffusion bonding, etched borosilicate glass, tunnel junction preparation, ion implantation, annealing, cleaning, coating, screen printing and sintering, etc. The sheet, or can be made into a heterojunction battery sheet through the steps of texturing, amorphous silicon thin film lamination, transparent conductive film lamination, printed electrode, etc.
在电池片切割步骤S5中，单晶电池片通过机械切割或者激光切割在预定切割线6的一端或者两端产生削弱部分，例如开口或切痕，诸如切割一定深度及长度的切痕7(如图6a所示，切痕7具有长度l)，切痕7在此可以为连续的刻痕或不连续的刻痕，然后略施加机械应力，根据晶体硅<110>晶向自然裂片的结构特性，单晶电池片会沿着预定切割线6容易地且整齐地裂开(如图6b所示)。In the cell sheet cutting step S5, the single crystal cell sheet produces weakened portions, such as openings or cuts, at one or both ends of the predetermined cutting line 6 by mechanical cutting or laser cutting, such as cutting a cut 7 of a certain depth and length (such as As shown in FIG. 6a, the cut 7 has a length l), and the cut 7 can be a continuous score or a discontinuous score, and then a slight mechanical stress is applied, according to the structural characteristics of the crystalline silicon <110> crystal direction natural lobes The single crystal cell will easily and neatly split along the predetermined cutting line 6 (as shown in Figure 6b).
在制备组件步骤S6中，由切割而成的小片电池片组成光伏组件。In the step S6 of preparing the module, the photovoltaic module is composed of the cut pieces of solar cells.
在图4中，示意性示出了经过开方、切片后获得的单晶硅片，单晶硅片的四个边缘的晶向为<110>。在图5中，示意性示出了由图4所示的单晶硅片经过制绒、清洗、扩散制结、去除磷硅玻璃、沉积减反射膜和丝网印刷等工序制作而成的单晶电池片，所述单晶电池片的四个边缘的晶向也为<110>。In FIG. 4, a single-crystal silicon wafer obtained by square cutting and slicing is schematically shown, and the four edges of the single-crystal silicon wafer have a crystal orientation of <110>. In FIG. 5, the single crystal silicon wafer shown in FIG. 4 is produced through processes such as texturing, cleaning, diffusion bonding, removal of phosphorosilicate glass, deposition of anti-reflection film, and screen printing. For the crystal cell slice, the crystal directions of the four edges of the single crystal cell slice are also <110>.
在图6a中，示意性示出了等待切割的单晶电池片，所述单晶电池片由上述方法制成，电池片的正反面为大致正方形，其四个边缘的晶向为<110>，正面形成有图样，并且在正面或者反面具有多条平 行于其中两个边缘、例如左右边缘的预定切割线6。在预定切割线6的一端或两端形成削弱部分，例如开有切痕7，该预定切割线垂直于单晶电池片的上下边缘。图6b示意性示出了沿着预定切割线6切割了的单晶电池片。由于利用了晶体硅<110>晶向自然裂片的结构特性，仅仅借助沿着预定切割线6的一定长度的削弱部分、例如切痕7就可以使得单晶电池片沿着预定切割线6容易地且整齐地裂开，大大减少了碎片，提高了切片效率。In FIG. 6a, a single-crystal cell sheet waiting to be cut is schematically shown, the single-crystal cell sheet is made by the above method, the front and back surfaces of the cell sheet are substantially square, and the crystal directions of its four edges are <110> , The front is formed with a pattern, and there are a plurality of predetermined cutting lines 6 parallel to two edges, for example, left and right edges, on the front or the back. A weakened portion is formed at one end or both ends of a predetermined cutting line 6, for example, a cut 7 is formed, and the predetermined cutting line is perpendicular to the upper and lower edges of the single crystal cell. Fig. 6b schematically shows a single crystal cell slice cut along a predetermined cutting line 6. Due to the use of the structural characteristics of the crystalline silicon <110> crystal-directed natural lobes, only a weakened portion along a predetermined length of the predetermined cutting line 6, for example, the cut 7 can make the single crystal cell sheet easily along the predetermined cutting line 6 And neatly split, greatly reducing the debris and improving the slicing efficiency.
本发明的保护范围仅由权利要求限定。得益于本发明的教导，本领域技术人员容易认识到可将本发明所公开结构的替代结构作为可行的替代实施方式，并且可将本发明所公开的实施方式进行组合以产生新的实施方式，或者将本发明应用于其他类似的领域，它们同样落入所附权利要求书的范围内。The protection scope of the present invention is limited only by the claims. Thanks to the teaching of the present invention, those skilled in the art can easily recognize that the alternative structure of the disclosed structure can be used as a feasible alternative embodiment, and the disclosed embodiment of the invention can be combined to produce a new embodiment Or apply the present invention to other similar fields, which also fall within the scope of the appended claims.

Claims (16)

  1. 一种用于单晶电池片的切割方法，所述单晶电池片通过以下步骤制备：A method for cutting a single crystal battery sheet, the single crystal battery sheet is prepared by the following steps:
    提供原料步骤：提供晶向为<100>的晶圆棒(1)作为原料；Step of providing raw materials: providing wafer rods (1) with crystal orientation <100> as raw materials;
    角度调整步骤：使所述晶圆棒(1)的生长棱线(2)与开方机晶托(3)的相邻的晶托棱线(4)沿周向间隔45度角；The angle adjustment step: make the growth ridgeline (2) of the wafer rod (1) and the adjacent pedestal ridgeline (4) of the square machine pedestal (3) be separated by 45 degrees in the circumferential direction;
    开方切片步骤：将所述晶圆棒(1)开方、切片，获得单晶硅片，所述单晶硅片的四个边缘的晶向为<110>；Square slicing step: Square and slice the wafer rod (1) to obtain a single crystal silicon wafer, and the crystal orientation of the four edges of the single crystal silicon wafer is <110>;
    制电池片步骤：将所述单晶硅片制成为单晶电池片(5)；The step of making a battery chip: making the single crystal silicon chip into a single crystal cell chip (5);
    其特征在于，所述切割方法包括如下步骤：It is characterized in that the cutting method includes the following steps:
    切割出削弱部分的步骤：垂直于所述单晶电池片的边缘切割出削弱部分；The step of cutting out the weakened part: cutting out the weakened part perpendicular to the edge of the single crystal cell;
    裂片步骤：施加机械应力，则所述单晶电池片在所述削弱部分处沿着垂直于所述边缘的削弱部分方向裂开。Splitting step: applying mechanical stress, the single crystal cell splits at the weakened portion in a direction perpendicular to the weakened portion of the edge.
  2. 根据权利要求1所述的切割方法，其特征在于，所述削弱部分为开口或者切痕(7)。The cutting method according to claim 1, characterized in that the weakened portion is an opening or a cut (7).
  3. 根据权利要求2所述的切割方法，其特征在于，所述切痕(7)为连续的或分段的刻痕。The cutting method according to claim 2, characterized in that the cut (7) is a continuous or segmented score.
  4. 根据权利要求1至3中任一项所述的切割方法，其特征在于，在所述切割出削弱部分的步骤中，还在与所述边缘平行的另一边缘上与所述削弱部分相对地切割出另一削弱部分。The cutting method according to any one of claims 1 to 3, wherein, in the step of cutting out the weakened portion, the other edge parallel to the edge is opposite to the weakened portion Cut out another weakened part.
  5. 根据权利要求1所述的切割方法，其特征在于，在所述角度调整步骤中，将所述晶圆棒(1)放置在所述开方机晶托(3)上，使所述晶圆棒(1)的生长棱线(2)与所述开方机晶托(3)的晶托棱线(4)重合，然后使所述晶圆棒(1)顺时针或逆时针旋转45度。The dicing method according to claim 1, characterized in that, in the step of adjusting the angle, the wafer rod (1) is placed on the squarer wafer support (3) to make the wafer The growth ridgeline (2) of the rod (1) coincides with the ridgeline (4) of the wafer holder (3), and then the wafer rod (1) is rotated clockwise or counterclockwise by 45 degrees .
  6. 根据权利要求1所述的切割方法，其特征在于，在所述制电池片步骤中，所述单晶硅片经过的处理步骤包括表面制绒、清洗、扩散制结、去除磷硅玻璃、沉积减反射膜和丝网印刷，制成为A1BSF 电池片。The cutting method according to claim 1, characterized in that, in the cell manufacturing step, the processing steps of the single crystal silicon wafer include surface texturing, cleaning, diffusion bonding, removal of phosphorous silicate glass, and deposition Anti-reflection film and screen printing, made into A1BSF cell.
  7. 根据权利要求1所述的切割方法，其特征在于，在所述制电池片步骤中，所述单晶硅片经过的处理步骤包括制绒、扩散、刻蚀、背钝化、镀膜、激光刻槽、印刷烧结，制成为PERC电池片。The cutting method according to claim 1, characterized in that, in the cell manufacturing step, the processing steps of the single crystal silicon wafer include texturing, diffusion, etching, back passivation, coating, laser engraving Slots, printing and sintering are made into PERC cells.
  8. 根据权利要求1所述的切割方法，其特征在于，在所述制电池片步骤中，所述单晶硅片经过的处理步骤包括制绒、扩散制结、刻蚀去硼硅玻璃、隧道结制备、离子注入、退火、清洗、镀膜、丝网印刷烧结，制成为TopCon电池片。The cutting method according to claim 1, characterized in that, in the cell manufacturing step, the processing steps of the single crystal silicon wafer include texturing, diffusion bonding, etching borosilicate glass, tunnel junction Preparation, ion implantation, annealing, cleaning, coating, screen printing and sintering are made into TopCon cells.
  9. 根据权利要求1所述的切割方法，其特征在于，在所述制电池片步骤中，所述单晶硅片经过的处理步骤包括制绒、非晶硅薄膜层积、透明导电膜层积、印刷电极，制成为异质结电池片。The cutting method according to claim 1, characterized in that, in the cell manufacturing step, the processing steps of the single crystal silicon wafer include texturing, amorphous silicon thin film lamination, transparent conductive film lamination, Printed electrodes, made as heterojunction cells.
  10. 一种用于光伏组件的制备方法，所述制备方法包括如下步骤：A preparation method for a photovoltaic module, the preparation method includes the following steps:
    提供晶向为<100>的晶圆棒(1)作为原料；Provide wafer rods (1) with crystal orientation <100> as raw materials;
    使所述晶圆棒(1)的生长棱线(2)与开方机晶托(3)的相邻的晶托棱线(4)沿周向间隔45度角；Arranging the growth ridgeline (2) of the wafer rod (1) and the adjacent crystal ridgeline (4) of the square machine crystal pedestal (3) along the circumferential direction at an angle of 45 degrees;
    将所述晶圆棒(1)开方、切片，获得单晶硅片，所述单晶硅片的四个边缘的晶向为<110>；Opening and slicing the wafer rod (1) to obtain a single crystal silicon wafer, the crystal orientation of the four edges of the single crystal silicon wafer is <110>;
    将所述单晶硅片制成为单晶电池片(5)；Making the monocrystalline silicon wafer into a monocrystalline battery wafer (5);
    垂直于所述单晶电池片的边缘切割出削弱部分，再施加机械应力，则所述单晶电池片在所述削弱部分处沿着垂直于所述边缘的方向裂开成小片电池片；The weakened portion is cut perpendicular to the edge of the single crystal battery sheet, and then mechanical stress is applied, then the single crystal battery sheet splits into small pieces of battery sheet along the direction perpendicular to the edge at the weakened portion;
    由多个所述小片电池片组成光伏组件。A photovoltaic module is composed of a plurality of small pieces of cells.
  11. 一种单晶电池片(5)，其特征在于，所述单晶电池片的四个边缘的晶向为<110>，并且在垂直于所述单晶电池片的边缘处具有一定长度的削弱部分。A single crystal cell (5), characterized in that the crystal orientation of the four edges of the single crystal cell is <110>, and has a certain length of weakening at the edge perpendicular to the edge of the single crystal cell section.
  12. 根据权利要求11所述的单晶电池片(5)，其特征在于，所述削弱部分为开口或者切痕(7)。The single crystal cell (5) according to claim 11, wherein the weakened portion is an opening or a cut (7).
  13. 根据权利要求12所述的单晶电池片(5)，其特征在于，所 述切痕(7)为连续的或分段的刻痕。The single crystal cell (5) according to claim 12, characterized in that the cut (7) is a continuous or segmented score.
  14. 根据权利要求11至13中任一项所述的单晶电池片(5)，其特征在于，在与所述边缘平行的另一边缘上具有与所述削弱部分相对且与所述削弱部分处于同一直线上的另一削弱部分。The single crystal cell (5) according to any one of claims 11 to 13, characterized in that, on the other edge parallel to the edge, it is opposite to the weakened portion and located at the weakened portion Another weakened part on the same line.
  15. 一种光伏组件，其特征在于，所述光伏组件通过根据权利要求10所述的制备方法制成。A photovoltaic module, characterized in that the photovoltaic module is manufactured by the preparation method according to claim 10.
  16. 根据权利要求15所述的光伏组件，其特征在于，所述光伏组件为半片光伏组件或叠瓦光伏组件。The photovoltaic module according to claim 15, wherein the photovoltaic module is a half photovoltaic module or a shingled photovoltaic module.
PCT/CN2018/119518 2018-11-23 2018-12-06 Single crystal battery wafer cutting method , single crystal battery wafer, photovoltaic assembly and preparation method WO2020103195A1 (en)

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