WO2020025054A1 - 一种发光装置及其制备方法 - Google Patents

一种发光装置及其制备方法 Download PDF

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Publication number
WO2020025054A1
WO2020025054A1 PCT/CN2019/099068 CN2019099068W WO2020025054A1 WO 2020025054 A1 WO2020025054 A1 WO 2020025054A1 CN 2019099068 W CN2019099068 W CN 2019099068W WO 2020025054 A1 WO2020025054 A1 WO 2020025054A1
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Prior art keywords
layer
light
emitting device
transparent
substrate
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PCT/CN2019/099068
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English (en)
French (fr)
Inventor
孙智江
王书昶
陈帅
Original Assignee
海迪科（南通）光电科技有限公司
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Publication of WO2020025054A1 publication Critical patent/WO2020025054A1/zh
Priority to US17/166,276 priority Critical patent/US11175448B2/en

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    • H01—ELECTRIC ELEMENTS
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • G02B6/002—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces
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    • H01L33/60—Reflective elements

Definitions

  • the present application relates to the field of semiconductor technology, and in particular, to a light emitting device and a manufacturing method thereof.
  • the traditional direct-type surface light source type light emitting devices mainly include the following three types: (1) a diffuser plate is arranged at a certain distance above the LED light source array, and the point light source is turned into a surface light source by the diffuser plate; (2) The lens is closely mounted on the LED light source, so that the light emitted by the LED light source passes through the lens and the air layer, and then irradiates the diffuser plate, thereby turning the point light source into a surface light source; (3) directly coating the surface of the LED light source array Silica gel plus fluorescent powder forms a light-guiding medium layer, and further changes a point light source into a surface light source.
  • the maximum light output angle of the LED light source is about 120 °.
  • the (1), (2) type of surface light source is used, it is easy to form a dark area, and there is uniform light mixing. Sexual problems.
  • the (3) type of surface light source is used, the light emitted by the LED light source is not conducive to lateral propagation in the phosphor layer, and the lateral propagation effect is limited.
  • the technical problem mainly solved by this application is to provide a light emitting device and a preparation method thereof, which can improve the light mixing effect.
  • a technical solution adopted in the present application is to provide a light-emitting device, the light-emitting device includes: a substrate; a plurality of LED light sources, and the LED light sources adopt a four-sided light emitting package form with an upper reflective layer on a top surface. A plurality of the LED light sources are arranged on the substrate at intervals; a transparent dielectric layer is provided on one side of the substrate and covers a plurality of the LED light sources.
  • another technical solution adopted in the present application is to provide a method for manufacturing a light emitting device, the method includes: mounting a plurality of LED light sources on a substrate, and the LED light sources are A four-sided light-emitting package of a reflective layer; the substrate is disposed on a support plate, wherein the substrate is not provided with a plurality of LED light sources on one side and is in contact with the support plate; and the support plate is formed to be transparent A dielectric layer, and the transparent dielectric layer covers a plurality of the LED light sources; the light emitting device is obtained by peeling from the support plate.
  • the beneficial effect of the present application is that, unlike the case of the prior art, in the light-emitting device provided by the present application, the LED light source is a four-sided light-emitting package with an upper reflective layer on the top surface, and the arrangement of the upper reflective layer can partially light Reflected to the side of the LED light source, thereby increasing the light angle of the LED light source and improving the light mixing effect; at the same time, the LED light source is arranged in a transparent medium layer in an array interval, and its light distribution is more uniform. Each LED light source is transparent The light emission in the dielectric layer forms the transmission and coupling of light.
  • Figure 1 is a test chart of the light angle of a traditional LED light source.
  • FIG. 2 is a schematic diagram of the light intensity superimposition of the first method in the conventional direct type surface emitting module.
  • FIG. 3 is a test chart of the light angle of a conventional LED light source plus a lens.
  • FIG. 4 is a schematic diagram of light intensity superposition using an LED light source and a lens method in a conventional direct-type surface light emitting module.
  • FIG. 5 is another schematic diagram of light intensity superimposition in a conventional direct-type surface light emitting module using a closely arranged LED light source and lens method.
  • FIG. 6 is a schematic diagram of an LED light source array and a phosphor method in a conventional direct type surface light emitting module.
  • FIG. 7 is a schematic diagram showing the loss of light intensity of a point light source with a phosphor waveguide.
  • FIG. 8 is a schematic diagram of the light intensity loss of a linear light source with a phosphor-containing waveguide.
  • FIG. 9 is a schematic diagram of the light intensity loss of a surface light source with a phosphor-containing waveguide.
  • FIG. 10 is a schematic structural diagram of an embodiment of a light emitting device of the present application.
  • FIG. 11 is a schematic structural diagram of an embodiment of the LED light source in FIG. 10.
  • FIG. 12 is a schematic structural diagram of another embodiment of a light emitting device of the present application.
  • FIG. 13 is a schematic structural diagram of an embodiment of the LED light source in FIG. 12.
  • FIG. 14 is a light emission angle test chart of the LED light source in FIG. 13.
  • FIG. 15 is a schematic structural diagram of another embodiment of the LED light source in FIG. 12.
  • FIG. 16 is a schematic structural diagram of another embodiment of the LED light source in FIG. 12.
  • FIG. 17 is a schematic structural diagram of another embodiment of the LED light source in FIG. 12.
  • FIG. 18 is a partially enlarged schematic diagram of the embodiment of FIG. 12.
  • FIG. 19 is a schematic structural diagram of another embodiment of a light emitting device of the present application.
  • FIG. 20 is a color gamut diagram of three primary colors.
  • FIG. 21 is a schematic structural diagram of an embodiment of a general edge-type backlight module.
  • FIG. 22 is a schematic structural diagram of another embodiment of a light emitting device of the present application.
  • FIG. 23 is a schematic structural diagram of another embodiment of a light emitting device of the present application.
  • FIG. 10 is a schematic structural diagram of an embodiment of a light-emitting device of the present application.
  • the light-emitting device includes a substrate 1, a plurality of LED light sources 2, and a transparent dielectric layer 3.
  • a plurality of LED light sources 2 are disposed on the substrate 1 at intervals, and the LED light sources 2 are in a four-sided light emitting package form with an upper reflective layer on the top surface.
  • the transparent medium layer 3 is disposed on one side of the substrate 1 and covers a plurality of LED light sources 2.
  • the height of the transparent medium layer 3 is equal to or higher than the height of the top surface of the LED light source 2.
  • the substrate 1 may be a whole substrate or a plurality of discontinuous strip substrates arranged at intervals, and the LED light source 2 is correspondingly disposed on the strip substrate.
  • the LED light source 2 may be a purple light source, a blue light source, a red light source, a green light source, or the like. As shown in FIG. 11, the LED light source 2 includes an LED chip body 21 and an upper reflection layer 22 covering the top surface of the chip body 21. The area of the upper reflection layer 22 is equal to the top surface area of the LED chip body 21.
  • the upper reflection layer 22 may be a DBR distributed Bragg mirror or a metal reflection layer.
  • the above-mentioned LED light source may further be provided with a transparent layer 23.
  • the transparent layer 23 is located on the top surface and side surfaces of the LED chip body 21, and the top surface of the transparent layer 23 is provided with an upper reflective layer 22.
  • the refractive index of the medium of the transparent layer 23 is higher than or equal to the refractive index of the transparent medium layer 3.
  • the transparent layer 23 may be disposed only on the top surface of the LED chip body 21 without covering the side surface of the LED chip body 21. At this time, the reflective layer 22 is still located on the top surface of the transparent layer 23.
  • the LED light source 2 succeeds in The main energy angle changes from 0 ° above and below to 60 ° around. Secondly, it can be seen from the light intensity distribution that its luminous light intensity is uniformly distributed throughout the entire luminous angle. Even in a large angle range of plus or minus 85 °, its outgoing light intensity is still about 73% of the peak light intensity. In a normal Lambertian-type LED light source, if the light output angle is 120 °, that is, when it is at plus or minus 60 °, its light output intensity is only half of the peak value (see FIG. 1). However, the light intensity in the LED light source 2 using the transflective and semi-reflective top surface reflection structure in this application still has a light intensity of 73% of the light intensity peak even in a large angle range of plus or minus 85 °.
  • a middle reflection layer 24 is further provided between the top surface of the LED chip body 21 and the transparent layer 23.
  • the middle reflection layer 24 is a total reflection layer or a partial reflection layer.
  • the transparent medium layer 3 in the light-emitting device provided in the present application may be a single medium that does not contain fluorescent powder and a uniformly distributed medium layer.
  • the transparent medium layer 3 is produced by molding, dispensing, spraying or material growth, and the material can be transparent high refractive index materials such as silicone, acrylic, PC, PS, and the like.
  • the upper surface of the substrate 1 (that is, the surface of the substrate 1 near the transparent medium layer 3) or the lower surface of the transparent medium layer 3 may be used according to the situation.
  • the surface of the transparent medium layer 3 near the substrate 1 is provided with a microstructured optical scattering layer
  • the upper surface of the transparent medium layer 3 (that is, the surface of the transparent medium layer 3 away from the substrate 1) is provided with a microstructured optical scattering layer Floor.
  • the microstructured optical scattering layer is generally provided with dark areas of the LED light sources 2 in an array distribution.
  • a surface of the transparent dielectric layer 3 near the substrate 1 is defined as a lower waveguide interface.
  • the light-emitting device provided in this application further includes a waveguide reflection layer 7 disposed between the lower waveguide interface and the substrate 1.
  • the above-mentioned light emitting device when the above-mentioned light emitting device is applied to a surface light source in the backlight display and lighting industry, for example, an ultra-thin display, a panel light (with and without a frame), a bulb lamp, a filament lamp, a fluorescent lamp, Street lights etc.
  • the LED light source 2 is a blue light source
  • the transparent dielectric layer 3 is a blue light waveguide layer
  • the blue light waveguide layer is a high refractive index blue light waveguide layer.
  • the LED light source 2 may also be a violet light source.
  • the surface light emitting module HLU: Hack Light Unit
  • HLU Lock Light Unit
  • the advantages of side-type surface light sources are: the overall thickness is thin and the number of light sources is small; the disadvantages of side-type surface light sources are: the need for a light guide plate, the cost is high, the light conversion efficiency is lower than the direct-type, and it cannot be used in the display field.
  • Direct-type surface light sources have simple process, reduced light guide plates, high light conversion efficiency, low cost, and occupy a certain mid-to-low-end market in the field of lighting and display.
  • HDR high dynamic range
  • a light source array composed of conventional LED light sources is used, and a diffusion plate is set a certain distance above the LED light source array, and the point light source is turned into a surface light source by using the diffusion plate;
  • a light source array composed of conventional LED light sources is used to closely install lenses on each LED light source. After the light emitted by the LED lamp beads passes through the lens, the light is conducted through the air layer between the lens and the diffuser plate to a certain extent. After the light intensity is superimposed, it is irradiated onto the diffuser plate, and then the point light source is changed into a surface light source;
  • the LED chip array is used, and the surface of the LED chip array is directly coated with silica gel and phosphor to form a light guide medium layer, so that the point light source is converted to a surface light source.
  • the maximum light output angle of a conventional LED light source is about 120 °, and the LED light source 91 and the diffuser plate 92 must be separated by a large distance to achieve a more uniform mixing.
  • the whole surface light emitting module is usually very thick, and can only be applied to the lighting industry, such as panel lights, and the application is very limited.
  • the light output angle after superposing the lens 3 on the LED light source 91 can reach 135 °. Although the light emission angle is increased, and the light output on the top surface is greatly reduced, the A relatively uniform light mixing effect can be achieved in a relatively short distance. Due to the need to use a secondary optical lens, the diffusion plate 92 and the secondary optical lens 93 must also be spaced a certain distance, although compared to the first method, the thickness is somewhat Reduced, but the surface light emitting module can not achieve ultra-thin effect.
  • a phosphor layer 94 is coated on the surface of the light source array formed by the plurality of LED chips 91, which slightly increases the lateral propagation and mixing of white light;
  • the intensity of the blue light which is excitation light, is rapidly reduced due to the absorption and irregular scattering of the phosphor.
  • FIG. 7 taking a point light source as an example, when the light intensity is transmitted in a waveguide containing phosphor, the intensity is numerically inversely proportional to the cube of the distance; as shown in FIG.
  • the light intensity of a line light source is When transmitting in a waveguide of a phosphor, the intensity is inversely proportional in value to the square of the distance; as shown in FIG. 9, when a light source is transmitted in a waveguide containing a phosphor, the intensity is inversely proportional to the distance in value.
  • the surface light source adopting the first and second methods due to the limitation of the light angle of the LED light source, not only is easy to form a dark area, and the uniformity of the mixed light is poor.
  • the entire direct-type surface light output module is also thicker. The thickness of the entire light emitting module can only be achieved by reducing the distance between adjacent LED light sources (see Figure 5), but the required LED light sources are multiplied and the cost is greatly increased.
  • the white light obtained by mixing the blue light excited phosphor is seriously attenuated during the propagation of the light guide medium, and the blue light excited by the phosphor is attenuated, so the blue light intensity is reduced.
  • the transverse propagation intensity along the waveguide direction is reduced; the chip's light brightness is not uniform, and the light mixing effect is poor, resulting in the uneven brightness of the entire surface in the surface light source.
  • the LED light source 2 is a four-sided light emitting package, at the same time, the LED light source 2 is a blue light waveguide layer (that is, a transparent medium) uniformly distributed in an array. Layer 3), its light distribution is more uniform; since the LED light source 2 is directly disposed in the high-refractive-index blue light waveguide layer, each LED light source 2 emits light in the high-refractive-index blue light waveguide layer to form light transmission and coupling, and The traditional side-entry light guide technology is incident on both sides of the light guide plate and then propagates laterally, and the light source is completely separated from the light guide plate.
  • the LED light source 2 is a four-sided light emitting package, at the same time, the LED light source 2 is a blue light waveguide layer (that is, a transparent medium) uniformly distributed in an array. Layer 3), its light distribution is more uniform; since the LED light source 2 is directly disposed in the high-refractive-index blue light waveguide layer, each LED light source 2 emits light in the high-
  • the traditional side-entry light guide needs to attach the light source to the On the side of the light guide plate, the light source manufacturer and the lamp manufacturer are separated.
  • the placement and combination of the light guide layer and the light source is completed directly in the production process, and the lamp manufacturer does not need to attach it twice. Installation, greatly simplifying the production process of lamps.
  • the LED chip body 21 in the LED light source 2 can be controlled separately through an external electrical connection. Compared with the side-entry light guide technology, it can successfully achieve local light emission and local extinction, and achieve high dynamic range (HDR). display.
  • the light-emitting device provided in the present application further includes: a diffusion film layer 4 and a phosphor layer 5 which are arranged in a stack, and the diffusion film layer 4 is located on the transparent medium layer 3 and the phosphor layer 5. between.
  • the phosphor layer 5 can be formed on the diffusion film layer 4 by coating, molding or growing and integrated with the diffusion film, or can be a separate sheet phosphor layer, or a specific transparent film as a supporting substrate. A phosphor layer formed at the bottom.
  • the transparent medium layer 3 contains no phosphor, and the white light emitted by the light emitting device is formed by mixing the phosphor layer 5 excited by the blue light emitted from the LED light source 2 (ie, the blue light chip); of course, the LED light source 2 may also be For a violet light chip, violet light can also be used to excite the phosphor in the phosphor layer 5 to form white light.
  • the LED light source 2 may also be For a violet light chip, violet light can also be used to excite the phosphor in the phosphor layer 5 to form white light.
  • the transparent dielectric layer 3 away from the substrate 1 as the upper waveguide interface, that is, the upper waveguide interface is the upper surface of the transparent dielectric layer 3; located on both sides of the upper waveguide interface
  • the medium on the side far from the substrate 1 is the external medium layer, that is, the medium above the upper surface of the transparent medium layer 3 is the external medium layer;
  • the refractive index of the transparent medium layer is denoted as n 2
  • the refractive index of the external medium layer is denoted as n. 3 , n 2 > n 3 .
  • the lower surface of the diffusion film layer 4 has uneven microstructures, and the microstructures occupy 10 to 100% of the total area of the diffusion film layer 4.
  • the microstructure can be formed by: Organic diffusion particles and a binder are coated thereon to form an uneven surface; or, the surface of the diffusion film layer 4 is changed into an irregular surface structure by rolling or the like. These tiny gaps on the uneven or irregular surface form a cavity.
  • An air gap is formed when the lower surface microstructure of the diffusion film layer 4 is attached to the upper surface of the waveguide interface on the high-refractive-index blue light waveguide layer (that is, the transparent dielectric layer 3). The air gap acts as the outer media layer.
  • a surface of the transparent dielectric layer 3 far from the substrate 1 is defined as an upper waveguide interface, and an air layer 8 is provided between the upper waveguide interface and the diffusion film layer 4. At this time, the air layer 8 serves as the outer medium layer.
  • the above-mentioned air gap or air layer 8 can be used as a low-refractive-index layer.
  • the blue light emitted by the LED light source 2 forms a waveguide in a high-refractive blue-waveguide layer (ie, the transparent dielectric layer 3).
  • the phosphor particles in the structure refract and scatter light.
  • the attenuation of blue light can be greatly reduced.
  • the point light source can be converted to a surface light source, which can increase the lateral propagation of blue light.
  • a uniform light intensity distribution can be obtained in the low-refractive index layer. After forming a surface light source, it is finally excited by fluorescence to form white light.
  • the light-emitting device provided in the present application further includes an upper diffusion film layer 6 located on a side of the phosphor layer 5 away from the transparent medium layer 3.
  • the thickness of the side of the transparent layer 23 is denoted as a
  • the height of the transparent layer 23 is denoted as h
  • the refractive index of the transparent layer 23 is denoted as n 1
  • the refractive index of the transparent dielectric layer 3 is denoted as n 2
  • the refractive index of the outer dielectric layer is denoted as n 3.
  • the light-emitting device provided in the present application can also cooperate with a liquid crystal module to form a display.
  • LED backlights have successfully replaced the advantages of low power consumption, low heat generation, high brightness, high color reproduction, long life, energy saving, environmental protection and lightness.
  • Traditional CCFL cold cathode tube.
  • the LED backlight modules commonly used in the industry are mainly divided into direct-type backlight and side-type backlight according to the position of the backlight source.
  • the types of LEDs used they can be divided into RGB LEDs and white LEDs.
  • Ordinary direct-type backlights use LED light sources directly behind the panel. The light distribution is relatively uniform, but the cost is relatively high. Due to the need for lenses to achieve mixed light, the thickness of the product is thick and it is not possible to achieve ultra-thin.
  • the LED point light source is arranged on the side of the light guide plate, and the light distribution is adjusted by the light guide plate. Therefore, the cost is low and the thickness of the product can be reduced.
  • RGB LED backlights generally use red, green and blue (RGB) three primary color LEDs as independent light-emitting elements. Compared with white LED backlights, they have better brightness, contrast and color.
  • LED backlight modules have also promoted the continuous change and innovation of the existing display technology.
  • LED backlight LCD module displays in display technology, there has also been a boom in recent years.
  • Self-luminous display so there are endless display products on the market, such as: traditional side-in and direct-type LED liquid crystal display, ULED, QLED, Mini-backlight, OLED, Mini-LED and so on.
  • traditional side-in and direct-type LED liquid crystal display ULED, QLED, Mini-backlight, OLED, Mini-LED and so on.
  • the high color saturation, thinness and lightness, high dynamic range, and low cost of display devices have become the mainstream trends that people continue to pursue.
  • the monochromaticity of LED light emission is better than that of current products such as OLED and QLED, and the LED's own light emission peak has the smallest full width at half maximum. . Therefore, in general, the color gamut of the three primary color LEDs is relatively wide.
  • HDR Dynamic range
  • direct-type LED backlight modules are currently more popular, such as traditional direct-type backlight displays, ULED and Mini-backlight, but both require a backlight module and a liquid crystal module structure, which will be caused by the two polarizations in the module.
  • the presence of the film causes some light loss, but the direct-type backlight can use local dimming technology, so it can obtain higher HDR; and the most commonly used edge-lit LED backlight modules, such as: ordinary side-in LED backlight displays and QLEDs also require structures such as backlight modules and liquid crystal modules.
  • a light guide plate will also be required to exhibit uniform light output, resulting in low light conversion efficiency and light leakage. Large factors cause a lot of light to be lost, so HDR is also relatively low.
  • narrow-band filters are usually used to obtain better monochromaticity and narrower half-peak widths, such as traditional side-in and direct-type LED backlights and ULEDs, although the monochromaticity and half-peak width can be obtained.
  • Increase, but its luminous flux will also be greatly affected.
  • the transmittance of the monochromatic narrowband filter can be reduced to less than 50%, while the transmittance of the monochromatic broadband filter is still 85%.
  • the light transmittance seriously affect the luminous flux, it will also cause its HDR effect to be relatively poor, and the price of narrow-band filters is much higher than that of high-pass filters, and the cost is relatively high.
  • the thickness of the product is thin, its dynamic range is low, and the color gamut of ordinary side-type LED liquid crystal displays is lower.
  • QLED also uses higher-purity three-primary-color quantum dots as down-conversion luminescent materials, so it has a high color gamut and the price is relatively higher than that of ordinary edge-lit LED liquid crystal displays.
  • ULED and Mini-backlights do not require a light guide plate and have a long service life, but both require liquid crystal modules.
  • ordinary direct-type LCD displays still have color gamut and dynamics.
  • ULED uses 576 LED light sources to increase the angle lens, using regional extinction technology and software control to obtain a higher dynamic range, but also There is still a problem of low color gamut, but the traditional direct-type display with a relatively thick product thickness is thinner and the price is relatively high; while the Mini-backlight uses a large number of LED particles and high-density COB packaging to achieve a uniform backlight with better color Range, high dynamic range, and the product is relatively thin, but because the distance between adjacent LEDs is only 2mm, a large number of chips are required, so the price is relatively higher.
  • OLEDs and Mini-LEDs that rely on self-luminous displays do not require a light guide plate and a liquid crystal module; OLEDs use organic self-luminous arrays to emit pure three primary colors, which brings a higher color gamut and dynamic range. , But the life is short and the cost is higher; and Mini-LED is hailed as the most anticipated product in the next few years. It uses the three primary color LEDs directly, its color is the purest, it has the highest color gamut and high dynamic range, and the product is thinner. But the cost is also the highest, and it is still in the research and development stage.
  • the LED light source 2a is a red light source, a green light source, and a blue light source.
  • the light-emitting device further includes: a diffusion film layer 4a and The liquid crystal module 5a using a broadband high-pass filter and the diffusion film layer 4a is located between the transparent dielectric layer 3a and the liquid crystal module 5a.
  • the refractive index of the transparent dielectric layer 3a is greater than the refractive index of the lower surface of the diffusion film layer 4a.
  • the display of the LED backlight module provided in this embodiment proposes a tri-color Mini-backlight, which directly uses a three-primary-color LED light source 2a, and requires a liquid crystal backlight module (LCM) 5a; compared with the traditional Mini-backlight technology
  • LCD liquid crystal backlight module
  • the four-sided blue light source, green light source, and red light source used in the present invention greatly increase the array pitch and greatly reduce the number of LED light sources 2a required.
  • the display of the new LED backlight module provided by this application has high Color gamut, high dynamic range (20000: 1), only need to use broadband filters with higher luminous flux, thin, flexible, low price, and can use large-scale liquid crystal production lines to achieve mass production.
  • the lower surface of the diffusion film layer 4a has a microstructure, and the microstructure accounts for 10 to 100% of the total area of the diffusion film layer 4a.
  • the microstructure can be formed by coating organic diffusion particles and a binder on the diffusion film layer 4a to form an uneven surface; or, changing the surface of the diffusion film layer 4 to an irregular surface by rolling or the like structure. These minute gaps on the uneven or irregular surface form a cavity, and further serve as an air low refractive index layer having a refractive index much lower than that of the transparent medium layer 3a.
  • a microstructured optical scattering layer may be provided on the upper surface of the substrate 1a or the lower surface of the transparent medium layer 3a, or on the upper surface of the transparent medium layer 3a according to the situation There are microstructured optical scattering layers.
  • the microstructured optical scattering layer is generally disposed at the center of four adjacent LED light sources 2a in a rectangular array distribution on the substrate 1a.
  • a lower reflective layer 6a may be optionally provided on a surface of the substrate 1a near the transparent medium layer 3a.
  • the structure of the LED light source 2a may be the same as that in the foregoing embodiment, and details are not described herein again.
  • the preparation method includes:
  • Step S101 A plurality of LED light sources 2 are mounted on the substrate 1.
  • the LED light sources 2 are in a four-sided light-emitting package with an upper reflective layer on the top surface.
  • the substrate 1 may be a flexible or rigid, transparent or non-transparent substrate.
  • the substrate 1 may be in the form of a whole plate or a discontinuous substrate, that is, the substrate 1 may be composed of a plurality of strip substrates arranged at intervals, and one end or both ends of the strip substrate are connected by electrode plates.
  • the above-mentioned step S101 includes: selecting a monolithic substrate 1 and selecting whether to apply a reflective layer on the surface of the substrate 1 to which the crystal is solidified and to solidify the crystal on the substrate 1 according to actual needs, that is, An LED light source 2 in the form of a four-sided light emitting package is mounted on the substrate 1.
  • the above-mentioned step S101 includes: selecting a monolithic substrate 1 and selecting whether to apply a reflective layer on the surface of the substrate 1 on which the crystal is solidified according to actual needs, and solidifying the crystal on the substrate as a whole. That is, the LED light source 2 in the form of a four-sided light-emitting package is mounted on the substrate 1, and then slit to form a strip substrate with a width of 0.2-3mm. One or both ends of each strip substrate are connected to form a whole through an electrode plate or an electrode device. structure.
  • the preparation method provided in the present application further includes: manufacturing an LED light source 2 in the form of a four-sided light emitting package, specifically:
  • Step S1 A qualified LED chip body 21 is selected, and the LED chip body 21 has a bottom reflection layer, a P-GaN layer, a light-emitting layer, an N-GaN layer, and a substrate in this order.
  • Step S2 arranging a plurality of LED chip bodies 21 at equal distances so that a fillable gap is formed between adjacent LED chip bodies 21, and then a transparent layer 23 is disposed on the entire upper surface of the LED chip body 21 and within the fillable gap.
  • Step S3 baking and semi-curing the semi-finished product obtained after performing step S2, and then setting a reflective layer 22 on the top surface of the transparent layer 23.
  • Step S4 baking and curing the entire wafer after step S3, and then cutting, splitting, and chip testing, sorting, and rearrangement after the splitting, to obtain the LED light source 2 having a transparent layer 23 and an upper reflective layer 22
  • An LED light source 2 is formed in the form of a four-sided light emitting package.
  • Step S102 The substrate 1 is set on a support plate, wherein a side of the substrate 1 without a plurality of LED light sources 2 is in contact with the support plate.
  • the support plate may be a reusable mold or a backlight plate
  • the continuous substrate 1 in step S101 may be arranged on a reusable mold or a backlight plate.
  • Step S103 forming a transparent medium layer 3 on the support plate, and the transparent medium layer 3 covers a plurality of LED light sources 2.
  • a high-refractive transparent material such as silica gel or acrylic material, is coated on the entire support plate, so that the high-refractive transparent material covers the entire surface of the continuous substrate 1, and finally integrally molded to form the LED light source 2 covering the four-sided light-emitting package.
  • Transparent medium layer 3 is coated on the entire support plate, so that the high-refractive transparent material covers the entire surface of the continuous substrate 1, and finally integrally molded to form the LED light source 2 covering the four-sided light-emitting package.
  • Step S104 The light-emitting device is obtained by peeling from the support plate.
  • the preparation method provided in the present application further includes: sequentially setting a diffusion film layer 4 and The phosphor layer 5 further forms a four-sided light-emitting blue light waveguide surface light emitting structure.
  • the preparation method provided in the present application further includes: sequentially setting a diffusion film layer 4a and A liquid crystal module 5a using a broadband high-pass filter.
  • Table 1 6-inch mobile phone backlight application cases
  • the direction of the main light emission energy is shifted from directly above to the side because a large-angle four-sided light source is used.
  • the light emitting angle is as high as 170 ° or more.
  • the light emitting device includes the liquid crystal module 5a
  • the LCD module 5a in order to highlight the display of the LED backlight module of the present application, it is compared with the traditional display device.
  • the comparison data is shown in Table 2 below:
  • the display of the LED backlight module prepared in this application has a high color gamut, high dynamic range (20000: 1), and only needs to use a broadband filter with a higher luminous flux than the traditional display. It is thin, thin, flexible, low-priced, and can use large-scale liquid crystal production lines to achieve mass production.

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Abstract

一种发光装置及其制备方法，发光装置包括：基板（1）；多个LED光源（2），LED光源（2）采用顶面具有上反射层（22）的四面出光封装形式，多个LED光源（2）间隔设置于基板（1）上；透明介质层（3），设置于基板（1）一侧，且包覆多个LED光源（2）。通过上述方式，能够提高混光效果。

Description

一种发光装置及其制备方法 技术领域
本申请涉及半导体技术领域，特别涉及一种发光装置及其制备方法。
背景技术
目前，传统直下式面光源类的发光装置主要包括以下3种类型：(1)在LED光源阵列的上方一定距离位置处设置扩散板，利用扩散板来将点光源变成面光源；(2)在LED光源上紧贴安装透镜，使LED光源发出的光经透镜、空气层传到后照射到扩散板上，进而将点光源变成面光源；(3)在LED光源阵列的表面直接涂覆硅胶加荧光粉形成导光介质层，进而将点光源变成面光源。
由于目前LED光源的出光角度受到限制，例如，LED光源的出光角度最大达到120°左右，当采用第(1)、(2)种类型的面光源时，易形成暗区、且存在混光均匀性差的问题。当采用第(3)种类型的面光源时，LED光源发出的光不利于在荧光粉层内横向传播，横向传播效果有限。
因此，目前急需研发一种能够提高混光效果、避免亮度不均发光装置。
发明内容
本申请主要解决的技术问题是提供一种发光装置及其制备方法，能够提高混光效果。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种发光装置，所述发光装置包括：基板；多个LED光源，所述LED光源采用顶面具有上反射层的四面出光封装形式，多个所述LED光源间隔设置于所述基板上；透明介质层，设置于所述基板一侧，且包覆多个所述LED光源。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种发光装置的制备方法，所述制备方法包括：在基板上贴装多个LED光源，所述LED光源采用顶面具有上反射层的四面出光封装形式；将所述基板设置于支撑板上，其中，所述基板未设置多个所述LED光源一侧与所述支撑板接触；在所述支撑板上涂覆形成透明介质层，所述透明介质层包覆多个所述LED光源；从所述支撑板上剥离获得所述发光装置。
本申请的有益效果是：区别于现有技术的情况，本申请所提供的发光装置 中，LED光源为顶面具有上反射层的四面出光封装形式，该上反射层的设置方式可以将部分光反射至LED光源的侧面，从而增大LED光源的出光角度，提高混光效果；同时，该LED光源是呈列阵间隔设置于透明介质层内，其光线分布更加均匀，每个LED光源在透明介质层内发光形成光的传输与耦合。
【附图说明】
图1为传统LED光源的出光角度测试图。
图2为传统直下式面出光模组中第一种方式的光强叠加原理图。
图3为传统LED光源加上透镜后的出光角度测试图。
图4为传统直下式面出光模组中采用LED光源加透镜方式的光强叠加原理图。
图5为传统直下式面出光模组中采用紧密排列LED光源加透镜方式的另一种光强叠加原理图。
图6为传统直下式面出光模组中采用LED光源阵列加荧光粉方式的示意图。
图7为含有荧光粉波导对于点光源的光强度的损耗示意图。
图8为含有荧光粉波导对于线光源的光强度的损耗示意图。
图9为含有荧光粉波导对于面光源的光强度的损耗示意图。
图10为本申请发光装置一实施方式的结构示意图。
图11为图10中LED光源一实施方式的结构示意图。
图12为本申请发光装置另一实施方式的结构示意图。
图13为图12中LED光源一实施方式的结构示意图。
图14为图13中LED光源的出光角度测试图。
图15为图12中LED光源另一实施方式的结构示意图。
图16为图12中LED光源另一实施方式的结构示意图。
图17为图12中LED光源另一实施方式的结构示意图。
图18为图12一实施方式的局部放大示意图。
图19为本申请发光装置另一实施方式的结构示意图。
图20为三基色的色域图。
图21为普通侧入式背光模组的一实施方式的结构示意图。
图22为本申请发光装置另一实施方式的结构示意图。
图23为本申请发光装置另一实施方式的结构示意图。
【具体实施方式】
请参阅图10，图10为本申请发光装置一实施方式的结构示意图。该发光装置包括：包括基板1、多个LED光源2、透明介质层3。其中，多个LED光源2间隔设置于基板1上，且LED光源2为顶面具有上反射层的四面出光封装形式。透明介质层3设置于基板1一侧，且包覆多个LED光源2，透明介质层3的高度等于或高于LED光源2的顶面高度。在本实施例中，基板1可以为整体基板，也可为多个间隔设置的非连续式条状基板，且LED光源2对应设置在条状基板上。
在一个实施方式中，上述LED光源2可以为紫光光源、蓝光光源、红光光源、绿光光源等。如图11所示，LED光源2包括LED芯片本体21以及覆盖在该芯片本体21顶面的上反射层22，上反射层22的面积等于LED芯片本体21的顶面面积。上反射层22可采用DBR分布式布拉格反射镜或金属反射层。
在又一个实施方式中，如图13所示，上述LED光源还可设置有透明层23，透明层23位于LED芯片本体21的顶面及侧面，透明层23的顶面设置上反射层22。透明层23的介质折射率高于或等于透明介质层3的折射率。当然，如图15所示，透明层23也可仅仅设置在LED芯片本体21的顶面而不覆盖LED芯片本体21的侧面，此时反射层22仍位于透明层23的顶面。
以采用半透明半反射的顶面反射结构的四面出光封装形式的LED光源2为例，如图14所示，该LED光源2成功的将正常朗伯光型结构的LED光源的主发光方向的主能量角从正上方0°转变成为四周的正负60°。其次，从光强分布上可见也成功的将其发光光强在整个发光角度内呈均匀化分布，即使在正负85°大角度范围下其出光光强仍是光强峰值的73％左右。而在正常朗伯光型结构的LED光源中如果其出光角度为120°，也就是说，当其在正负60°时其出光光强仅为峰值的一半(参见图1)。而本申请采用半透明半反射的顶面反射结构的LED光源2中光强即使在正负85°大角度范围内其光强仍为光强峰值的73％。
在另一个实施方式中，如图16和图17所示，在LED芯片本体21顶面与透明层23之间设置还设置中反射层24，中反射层24为全反射层或部分反射层。
在又一个实施方式中，本申请所提供的发光装置中的透明介质层3可以为不含荧光粉的单一介质且均匀分布的介质层。透明介质层3的制作采用模压、点胶、喷涂或材料生长的方式，其材质可以为硅胶、亚克力材料、PC、PS等透明高折射率材料。
为了改善光强不均的情况，提升混光效果，如图10所示，可根据情况在基板1的上表面(即基板1靠近透明介质层3一侧表面)或透明介质层3的下表面(即透明介质层3靠近基板1一侧表面)设有微结构光学散射层，又或在透明介质层3的上表面(即透明介质层3远离基板1一侧表面)设有微结构光学散射层。该微结构光学散射层一般设置呈阵列分布的LED光源2的暗区。
此外，定义透明介质层3中靠近基板1的一个表面为下波导分界面，本申请所提供的发光装置还包括波导反射层7，设置于在下波导分界面与基板1之间。
在一个具体地应用场景中，当上述发光装置应用于背光显示和照明行业内的面光源时，例如，超薄显示器、面板灯(有边框和无边框)、球泡灯、灯丝灯、日光灯、路灯等。该LED光源2为蓝光光源，透明介质层3为蓝光波导层，且该蓝光波导层为高折射率的蓝光波导层。当然，LED光源2也可为紫光光源。
下面首先介绍一下现有面光源的现状。
近几年，在背光显示和照明行业内采用的面光源中，面出光模组(HLU：Hack Light Unit)分为直下式和侧入式两种。其中，侧入式面光源的优点为：整体厚度较薄，且光源数量少；侧入式面光源的缺点为：需要采用导光板，成本高，光转换效率低于直下式，在显示领域无法实现区域消光(Local Dimming)，进而无法实现高动态范围(HDR)，其HDR一般在3000：1，应用受到很大的局限性。直下式面光源中，LED阵列置于面出光模组底部，从LED发出的光经过底面和侧面反射，再通过表面的扩散板和光学模组均匀射出。直下式面光源由于工艺简单，减少了导光板，光转换效率高，成本低，本身在照明与显示领域占据了一定的中低端市场；现阶段，为了得到色彩更加鲜艳的显示效果，需要较高的现实真正存在的亮度差之比(即：最亮的物体亮度，和最暗的物体亮度之比)即高动态范围(HDR)，由于其HDR能够达到20000：1，因此，在背光显示和照明行业的面光源应用中又逐渐受到重视。
目前，传统直下式面出光模组主要有3种方式：
(1)采用常规LED光源组成的光源阵列，在LED光源阵列的上方一定距离设置扩散板，利用扩散板来将点光源变成面光源；
(2)采用常规LED光源组成的光源阵列，在各LED光源上紧贴安装透镜，使LED灯珠发出的光经透镜后，光经过透镜与扩散板之间的空气层传导，进行一定程度上的光强叠加后再照射到扩散板上，进而将点光源变成面光源；
(3)采用LED芯片阵列，在LED芯片阵列的表面直接涂覆硅胶加荧光粉形成导光介质层，使得点光源向面光源转变。
上述方式均存在一定的缺点或局限性：
(1)对于第一种方式：如图1、2所示，常规LED光源的出光角度最大达到120°左右，LED光源91与扩散板92之间必须间隔较大的距离才能达到较为均匀的混光效果，整个面出光模组通常很厚，一般只能应用于照明行业，例如面板灯，应用非常局限。
(2)对于第二种方式：如图3、4所示，LED光源91上叠加透镜3后的出光角度能够达到135°，其虽然增加了发光角度，且顶面出光大为减少，能够在相对更短的距离内达到较均匀的混光效果，由于需要使用二次光学透镜，扩散板92与二次光学透镜93之间也必须间隔一定的距离，虽然相较第一种方式厚度有所减小，但面出光模组无法达到超薄的效果。
(3)对于第三种方式，如图6所示，其在若干LED芯片91，构成的光源阵列表面涂覆了荧光粉层94，略微增加了白光的横向传播与混光；但由光学理论，我们可以发现，当蓝光在含有荧光粉的波导中传输时，作为激发光的蓝光强度会因为荧光粉的吸收及不规则散射而快速降低。如图7所示，以点光源为例，其光强在含有荧光粉的波导中传输时，强度在数值上与距离的立方成反比；如图8所示，线光源，其光强在含有荧光粉的波导中传输时，强度在数值上与距离的平方成反比；如图9所示，面光源，其光强在含有荧光粉的波导中传输时，强度在数值上与距离成反比。
综上所述，采用第一、二种方式的面光源，由于LED光源出光角度的限制，不仅易形成暗区、混光均匀性差，整个直下式面出光模组还较厚，若要减小整个面出光模组的厚度，只能通过缩小相邻LED光源间距来实现(参见图5)，但是所需LED光源成倍的增加，成本大幅提高。
采用第三种方式的面光源，虽然解决了模组厚度的问题，但由于蓝光激发荧光粉混合得到的白光在导光介质传播过程中衰减严重，激发荧光粉的蓝光衰 减，因此，蓝光强度降低，沿波导方向的横向传播强度降低；芯片出光亮度不均匀，混光效果差，导致面光源中整面亮度的也不太均匀。
当将本申请所提供的发光装置作为面光源显示模组时，由于LED光源2为四面出光封装形式，同时，LED光源2是呈列阵均匀分布在高折射率的蓝光波导层(即透明介质层3)内的，其光线分布更加均匀；由于LED光源2直接设置在高折射率的蓝光波导层里，每个LED光源2在高折射率蓝光波导层内发光形成光的传输与耦合，而传统侧入式导光技术是在导光板两侧入射再横向传播，光源与导光板是完全分离的；从应用上看，例如制造灯具的过程中，传统侧入式需要另外将光源贴装到导光板的侧面，光源制作厂家与灯具制作厂家是分开的；而采用本申请的出光装置，直接在生产过程中即完成了导光层与光源的贴装、结合，灯具制作厂家无需二次贴装，大大简化了灯具的生产工艺。此外，LED光源2中的LED芯片本体21可以通过对外的电学连接进行单独的控制，相较侧入式导光技术，能够顺利实现局域发光、局域消光，达到高动态范围(HDR)的显示。
在一个实施方式中，如图10所示，本申请所提供的发光装置还包括：层叠设置的扩散膜层4和荧光粉层5，且扩散膜层4位于透明介质层3与荧光粉层5之间。其中，荧光粉层5可采用涂布、模压或生长的方式形成在扩散膜层4之上并与扩散膜形成一体化，或为单独的片状荧光粉层，或以特定透明薄膜为支撑衬底形成的荧光粉层。在本实施例中，透明介质层3内不含荧光粉，发光装置发出的白光是由LED光源2(即蓝光芯片)发出的蓝光激发荧光粉层5混合形成；当然，LED光源2也可为紫光芯片，此时也可利用紫光来激发荧光粉层5内的荧光粉形成白光。本实施例中，请继续参阅图10，定义透明介质层3中远离基板1的一个表面为上波导分界面，即上波导分界面为透明介质层3的上表面；位于上波导分界面两侧中远离基板1的一侧媒质为外媒质层，即位于透明介质层3上表面上方的媒质为外媒质层；将透明介质层的折射率记作n 2，外媒质层的折射率记作n 3，n 2＞n 3。
在一个应用场景中，扩散膜层4的下表面具有凹凸不平的微结构，且微结构占扩散膜层4总面积的10～100％，该微结构可通过如下方式形成：在扩散膜层4上涂布有机物扩散粒子和粘合剂以形成凹凸不平的表面；或者，通过滚压等方式将扩散膜层4的表面变成不规则的表面结构。这些凹凸不平或不规则表面的微小间隙形成空腔，当扩散膜层4下表面微结构贴于高折射率蓝光波导 层(即透明介质层3)上波导分界面上表面时形成空气隙，该空气隙则作为外媒质层。
当然，在其他应用场景中，如图19所示，定义透明介质层3中远离基板1的一个表面为上波导分界面，在上波导分界面与扩散膜层4之间设置有空气层8，此时空气层8作为外媒质层。
上述空气隙或空气层8可以作为低折射率层，LED光源2发出的蓝光在高折射率的蓝光波导层(即透明介质层3)内形成波导，可以通过高折射率的蓝光波导，减少常规结构中的荧光粉颗粒对于光的折射与散射，同时在单一介质中，可以极大地减少蓝光的衰减，由于光的波导作用，可以使得点光源向面光源转变，增加了蓝光的横向传播，同时在低折射率层中可以获得均匀的光强分布，形成面光源后最后经过荧光激发形成白光出光。
在又一个实施方式中，如图10、12、19所示，本申请所提供的发光装置还包括上扩散膜层6，位于荧光粉层5远离透明介质层3一侧。
在又一个实施方式中，当LED光源2包括透明层时，如图18所示，将透明层23侧面的厚度记为a，透明层23的高度记为h，透明层23的折射率记为n 1，透明介质层3的折射率记为n 2，外媒质层的折射率记为n 3，为了实现光的全反射，需满足以下公式：
Figure PCTCN2019099068-appb-000001
在又一个具体地应用场景中，本申请所提供的发光装置还可与液晶模组进行配合以形成显示器。
下面首先介绍一下液晶显示技术的现状。
随着液晶显示技术在商业、工业及军事等领域不断的发展，LED背光源因低功耗，低发热量，高亮度，高色彩还原度，长寿命，节能环保及轻薄等优势，成功取代了传统的CCFL(冷阴极管)。
现在业界通用的LED背光模组根据背光源位置的不同主要分为直下式背光与侧入式背光两类；而根据采用的LED种类不同，又可分为RGB LED与白光LED。普通直下式背光源采用直接将LED光源分布在面板后方，光分布较均匀，但成本相对较高，由于需要透镜实现混光，产品厚度较厚，无法实现超薄；而侧入式背光源则通过相应设计将LED点光源设置在导光板侧边，通过导光板调节光分布，因此，成本较低，且产品厚度可实现轻薄化。而RGB LED 背光一般采用红绿蓝(RGB)三原色LED作为独立发光元件，与白光LED背光源相比，具有更好的亮度、对比度及色彩度。
LED背光模组的普遍使用，也促进了现有的显示技术的不断变革创新，现在显示技术中除了原有的普通侧入式及直下式LED背光液晶模组显示外，还有近年正火热兴起的自发光显示，因此目前市面上显示产品也层出不穷，如：传统侧入式及直下式LED液晶显示，ULED、QLED、Mini-背光、OLED、Mini-LED等。进而显示设备的高色彩饱和度，轻薄化、高动态范围，及低成本已成为人们不断追求的主流趋势。
首先，如图20可见，三基色的单色性越好说明其发光波长在色域图中更处于边缘位置，围成的三角形面积也越大，因此其色域面积也将越大，进而显示器所能显示的颜色也越多，图片、视频能展现出来的颜色也将越丰富；而LED的发光单色性相对目前产品中的OLED及QLED均较好，且LED自身发光峰半高宽最小。因此，一般情况下三基色LED的色域相对最广。
其次，为了得到色彩更加鲜艳的显示效果，不仅需要广的色域，同时还需要具有较高的现实真正存在的亮度差之比(即最亮的物体亮度和最暗的物体亮度之比)高动态范围(HDR)。目前只有Mini-LED及OLED这两种显示技术，都采用正面自发光且无需背光模组及液晶模组等结构，因此，其HDR也是目前所有显示中最高的，理论上亮暗比无限大；其次，目前也较流行采用为直下式LED背光模组，如：传统直下式背光显示，ULED及Mini-背光，但均需背光模组及液晶模组等结构，会因模组中两片偏振片的存在导致有部分光损失，然而直下式背光可采用区域消光技术(Local Dimming)，因此，可获得较高的HDR；而最普遍应用的侧入式LED背光模组，如：普通侧入式LED背光显示及QLED，同样均需背光模组及液晶模组等结构，不仅会有部分光损失，同时也需导光板才能呈现均匀出光的效果，导致光转换效率低且存在漏光，以上两大因素使得大量光被损失，因此HDR也相对最低。
最后，如传统侧入式和直下式LED背光及ULED等为了得到较好的单色性及较窄的半峰宽通常要采用窄带滤光片，虽可使其单色性及半峰宽得到提高，但是其光通量也将受到极大的影响。通常情况下当入射角为正负20度时，单色窄带滤光片的透过率可以下降到50％以下，而单色宽带滤光片透过率仍有85％。不仅透光率会严重影响光通量，也将导致其HDR效果相对较差，且窄带滤光片的价格相对高通滤光片要高出很多，成本也相对较高。
在采用传统侧入式LED背光模组的普通LED液晶显示及QLED中，二者均采用侧入式LED背光模组，如图21所示，包括自下而上依次设置的下反射层1'、导光板2'、扩散膜层3'、增光膜层4'、下正交偏振片5'、液晶模6'、三色滤光片7'和上正交偏振片8'，并且在导光板2'的侧面设有LED光源9'，虽然产品厚度较薄，但是其动态范围均较低，且普通侧入式LED液晶显示的色域更低。在此基础上，QLED同时采用纯度更高的三基色量子点作为下转换发光材料，因此具有高色域，同时价格也相对比普通侧入式LED液晶显示要高些，但量子点同时存在化学稳定性差的问题，因此QLED使用寿命也比普通侧入式LED液晶显示要短。而在采用直下式LED背光模组中的传统直下式背光显示，ULED及Mini-背光，无需导光板，使用寿命长，但均须液晶模组；其中普通直下式液晶显示仍存在色域与动态范围低的问题，且产品非常厚，但其使用寿命同样较长，价格低廉；ULED则通过576颗LED光源加大角度透镜，采用区域消光技术及软件控制可获得较高的动态的范围，也仍存在色域低问题，但其产品厚度相对非常厚的传统直下式显示减薄些，同时价格相对较高；而Mini-背光采用大量LED颗粒高密度COB封装实现均匀背光，具有较好的色域，高动态范围，产品也相对较薄，但由于相邻LED间距仅为2mm，需要采用大量芯片，因此其价格也相对更高。而依靠自发光显示的OLED与Mini-LED，均无需导光板及液晶模组；其中OLED采用有机物自发光阵列发出较纯的三基色，带来了更高的色域及动态范围，产品虽然薄，但寿命短，成本也更高；而Mini-LED被誉为未来几年内最受期待产品，直接采用三基色LED，其色彩最纯，具有最高色域及高动态范围，且产品更薄，但成本也最高，目前还处于研发阶段。
综上所述，以上现有的液晶显示技术均还有待进一步改进和提高。
当上述发光装置与液晶模组联合使用形成显示器时，如图22和23所示，LED光源2a为红光光源、绿光光源、蓝光光源，发光装置还包括：层叠设置的扩散膜层4a和采用宽带高通滤光片的液晶模组5a，且扩散膜层4a位于透明介质层3a与液晶模组5a之间，透明介质层3a的折射率大于扩散膜层4a下表面的折射率。
本实施例中所提供的LED背光模组的显示器，提出了一种三色Mini-背光，直接采用三基色LED光源2a，需要液晶背光模组(LCM)5a；相较于传统Mini-背光技术，本发明采用的四面出光的蓝光光源、绿光光源、红光光源，因此阵列间距大为提高，所需要的LED光源2a数量大量减少；本申请所提供的新型 LED背光模组的显示器具有高色域、高动态范围(20000:1)、仅需采用光通量更高的宽带滤光片、轻薄、可柔性、较低价，且可利用成熟液晶产线实现规模量产。
在一个实施方式中，如图22和23所示，扩散膜层4a的下表面具有微结构，且微结构占扩散膜层4a总面积的10～100％。该微结构可通过以下方式形成：在扩散膜层4a上涂布有机物扩散粒子和粘合剂形成凹凸不平的表面；或者，通过滚压等方式将扩散膜层4的表面变成不规则的表面结构。这些凹凸不平或不规则表面的微小间隙形成空腔，进而作为折射率远低于透明介质层3a的空气低折射率层。
为了改善光强不均的情况，提升混光效果，可根据情况在基板1a的上表面或透明介质层3a的下表面设有微结构光学散射层，又或在透明介质层3a的上表面设有微结构光学散射层。该微结构光学散射层一般设置在基板1a上四个相邻的呈矩形阵列分布的LED光源2a中心。
此外，在本实施例中，基板1a中靠近透明介质层3a的一侧表面也可选择设有下反射层6a。LED光源2a的结构可以与上述实施例中相同，在此不再赘述。
下面从制备方法的角度对本申请所提供的发光装置作进一步说明。请再次参阅图1，该制备方法包括：
步骤S101：在基板1上贴装多个LED光源2，LED光源2采用顶面具有上反射层的四面出光封装形式。
具体地，在一个实施方式中，基板1可以是柔性或刚性、透明或非透明的基板。基板1可以是整体板状，也可以采用非连续式的基板，即基板1可以由多个间隔设置的条状基板组成，在条状基板的一端或两端通过电极板连接。
当基板1为整体基板时，上述步骤S101包括：选用一整体基板1，并根据实际需求选择是否要在基板1上固晶的一侧表面镀下反射层，在基板1上整体固晶，即在基板1上贴装四面出光封装形式的LED光源2。
当基板1为非连续式的基板时，上述步骤S101包括：选用一整体基板1，并根据实际需求选择是否要在基板1上固晶的一侧表面镀下反射层，在基板上整体固晶，即在基板1上贴装四面出光封装形式的LED光源2，然后分切形成宽度为0.2-3mm的条状基板，各条状基板的一端或两端通过电极板或电极装置连接形成一整体结构。
在另一个实施方式中，在步骤S101之前，本申请所提供的制备方法还包括：制作四面出光封装形式的LED光源2，具体地：
步骤S1：选取合格的LED芯片本体21，LED芯片本体21具有自下而上依次设置有下反射层、P-GaN层、发光层、N-GaN层和衬底。
步骤S2：将若干LED芯片本体21等距排列，使得相邻LED芯片本体21之间形成一可填充间隙，再整体在整个LED芯片本体21上表面以及可填充间隙内设置透明层23。
步骤S3：对进行完步骤S2得到的半成品进行烘烤半固化，然后再在透明层23顶面设置上反射层22。
步骤S4：对进行完步骤S3的整个晶圆片烘烤固化，而后进行切割、裂片，裂片后进行芯片测试、分选、重排，得到具有透明层23和上反射层22的LED光源2，形成四面出光封装形式的LED光源2。
步骤S102：将基板1设置于支撑板上，其中，基板1未设置多个LED光源2一侧与支撑板接触。
具体地，支撑板可以是可重复使用的模具或背光板，可以将步骤S101中连续基板1布置在可重复使用的模具或背光板上。
步骤S103：在支撑板上涂覆形成透明介质层3，透明介质层3包覆多个LED光源2。
具体地，在整个支撑板上整体涂覆高折射透明材料，例如硅胶或亚克力材料，使得高折射透明材料覆盖整个连续基板1表面，最后整体模压成型，形成覆盖四面出光封装形式的LED光源2的透明介质层3。
步骤S104：从支撑板上剥离获得发光装置。
在一个具体地应用场景中，当发光装置的结构如图10所示时，上述步骤S104之前，本申请所提供的制备方法还包括：在透明介质层3的上表面依次设置扩散膜层4和荧光粉层5，进而形成四面出光蓝光波导面发光结构。
在又一个具体地应用场景中，当发光装置的结构如图11所示时，上述步骤S104之前，本申请所提供的制备方法还包括：在透明介质层3a上表面依次设置扩散膜层4a和采用宽带高通滤光片的液晶模组5a。
采用上述方式制备获得的发光装置用作背光模组时，其与传统直下式背光模组的各项参数对比如下表1所示，其中，该发光装置中LED光源2的结构如图13所示：
表1：6英寸手机背光应用案例
Figure PCTCN2019099068-appb-000002
从上表1可以看出，在发光区域面积相同、背光模组厚度相同的前提下，本实施例中，由于采用了大角度四面出光光源将主发光能量方向从正上方偏移至侧面，同时，发光角度高达170°以上，在保证相同混光效果的前提下，有效的提高了相邻LED光源2的间距，大幅降低LED光源2颗粒数。
当发光装置中包括液晶模组5a时，为了突出本申请LED背光模组的显示器，将其与传统显示器件进行对比，其对比数据见下表2所示：
表2：本申请LED背光模组的显示区与传统显示器对比
Figure PCTCN2019099068-appb-000003
Figure PCTCN2019099068-appb-000004
由上表2可以看出，本申请制备获得的LED背光模组的显示器，与传统显示器相比，具有高色域、高动态范围(20000:1)、仅需采用光通量更高的宽带滤光片、轻薄、可柔性、较低价，且可利用成熟液晶产线实现规模量产。

Claims (20)

  1. 一种发光装置，其特征在于，所述发光装置包括：
    基板；
    多个LED光源，所述LED光源采用顶面具有上反射层的四面出光封装形式，多个所述LED光源间隔设置于所述基板上；
    透明介质层，设置于所述基板一侧，且包覆多个所述LED光源。
  2. 根据权利要求1所述的发光装置，其特征在于，所述LED光源包括：
    LED芯片本体以及覆盖所述LED芯片本体的顶面的上反射层。
  3. 根据权利要求2所述的发光装置，其特征在于，所述LED光源还包括：
    透明层，位于所述LED芯片本体的顶面及侧面，且所述上反射层位于所述透明层的顶面。
  4. 根据权利要求3所述的发光装置，其特征在于，
    所述透明层的折射率高于或等于所述透明介质层折射率。
  5. 根据权利要求3所述的发光装置，其特征在于，所述LED光源还包括：
    中反射层，位于所述LED芯片本体的顶面与所述透明层之间，且所述中反射层为全反射层或部分反射层。
  6. 根据权利要求1所述的发光装置，其特征在于，
    所述透明介质层为单一介质且均匀分布的介质层。
  7. 根据权利要求1所述的发光装置，其特征在于，所述发光装置还包括：
    微结构光学散射层，位于所述基板靠近所述透明介质层一侧表面，和/或，位于所述透明介质层靠近所述基板一侧表面，和/或，位于所述透明介质层远离所述基板一侧。
  8. 根据权利要求1所述的发光装置，其特征在于，所述发光装置还包括：
    波导反射层，位于所述透明介质层与所述基板之间。
  9. 根据权利要求1所述的发光装置，其特征在于，所述发光装置还包括：
    扩散膜层，位于所述透明介质层远离所述基板一侧，且所述扩散膜层与所述透明介质层之间存在空气层或空气隙。
  10. 根据权利要求9所述的发光装置，其特征在于，
    所述扩散膜层与所述透明介质层之间存在空气隙时，所述扩散膜层靠近所述透明介质层一侧表面具有凹凸不平的微结构，且所述微结构占所述扩散膜层 总面积的10～100％；所述扩散膜层的所述微结构紧贴所述透明介质层以形成空气隙。
  11. 根据权利要求9所述的发光装置，其特征在于，所述发光装置还包括：
    外媒质层，位于所述透明介质层远离所述基板一侧，所述透明介质层的折射率记作n 2，所述外媒质层的折射率记作n 3，n 2＞n 3；其中，当所述扩散膜层与所述透明介质层之间存在空气层或空气隙时，所述空气层或空气隙作为所述外媒质层。
  12. 根据权利要求11所述的发光装置，其特征在于，
    所述LED光源包括透明层，所述透明层侧面的厚度a，所述透明层的高度h，所述透明层的折射率n 1，所述透明介质层的折射率n 2，所述外媒质层的折射率n 3，满足以下公式：
    Figure PCTCN2019099068-appb-100001
  13. 根据权利要求9所述的发光装置，其特征在于，
    所述LED光源为蓝光光源，所述透明介质层为蓝光波导层；所述发光装置还包括：荧光粉层，与所述扩散膜层层叠设置，且所述扩散膜层位于所述透明介质层与所述荧光粉层之间。
  14. 根据权利要求13所述的发光装置，其特征在于，所述发光装置还包括：
    上扩散膜层，位于所述荧光粉层远离所述透明介质层一侧。
  15. 根据权利要求13所述的发光装置，其特征在于，
    所述荧光粉层采用涂布、模压或生长的方式形成在所述扩散膜层之上并与所述扩散膜层形成一体化，或为单独的片状荧光粉层，或以透明薄膜为支撑衬底形成的荧光粉层。
  16. 根据权利要求9所述的发光装置，其特征在于，
    所述LED光源为红光光源、绿光光源、蓝光光源，所述发光装置还包括：采用宽带高通滤光片的液晶模组，与所述扩散膜层层叠设置，且所述扩散膜层位于所述透明介质层与所述液晶模组之间，所述透明介质层的折射率大于所述扩散膜层下表面的折射率。
  17. 根据权利要求1所述的发光装置，其特征在于，
    所述透明介质层的制作采用模压、点胶、喷涂或材料生长的方式。
  18. 根据权利要求1所述的发光装置，其特征在于，
    所述基板为多个间隔设置的非连续式条状基板，且所述LED光源对应设置在所述条状基板上。
  19. 一种发光装置的制备方法，其特征在于，所述制备方法包括：
    在基板上贴装多个LED光源，所述LED光源采用顶面具有上反射层的四面出光封装形式；
    将所述基板设置于支撑板上，其中，所述基板未设置多个所述LED光源一侧与所述支撑板接触；
    在所述支撑板上涂覆形成透明介质层，所述透明介质层包覆多个所述LED光源；
    从所述支撑板上剥离获得所述发光装置。
  20. 根据权利要求19所述的制备方法，其特征在于，所述在基板上贴装多个LED光源之前，所述制备方法还包括：
    步骤S1：选取合格的LED芯片本体，所述LED芯片本体包括自下而上依次设置的下反射层、P-GaN层、发光层、N-GaN层和衬底；
    步骤S2：将多个所述LED芯片本体等距排列，使得相邻所述LED芯片之间形成一可填充间隙，再整体在整个LED芯片表面以及可填充间隙内设置透明层，并进行烘烤固化得到半成品；
    步骤S3：在所述半成品顶面形成上反射层；
    步骤S4：对顶面具有所述上反射层的半成品再次烘烤固化，而后进行切割、裂片，裂片后进行芯片测试、分选、重排，得到LED光源。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4050408A4 (en) * 2021-01-04 2022-09-14 Samsung Electronics Co., Ltd. DISPLAY DEVICE AND LIGHT SOURCE DEVICE THEREFOR
US20230204190A1 (en) * 2020-05-22 2023-06-29 Beijing Ivisual 3d Technology Co., Ltd. Light-emitting module, display module, display screen and display
US11809042B2 (en) 2021-01-04 2023-11-07 Samsung Electronics Co., Ltd. Display apparatus and light source device thereof
EP4102560A4 (en) * 2020-02-11 2024-03-13 Seoul Viosys Co. Ltd. DISPLAY DEVICE, PIXEL MODULE AND UNIT PIXEL WITH LIGHT-LIGHT DIODE

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11281047B1 (en) * 2020-12-01 2022-03-22 Solomon Systech (China) Limited Backlight generation with local dimming for liquid crystal panel having arbitrary shape
EP4283386A1 (en) * 2021-06-29 2023-11-29 Samsung Electronics Co., Ltd. Display device
TWI820512B (zh) * 2021-11-10 2023-11-01 位元奈米科技股份有限公司 電容感應辨識標籤

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206923A1 (en) * 2011-02-14 2012-08-16 Semiconductor Energy Laboratory Co., Ltd. Optical Element, Light-Emitting Device, Lighting Device, and Method for Manufacturing Optical Element
CN106773315A (zh) * 2017-01-13 2017-05-31 深圳市华星光电技术有限公司 背光模组及液晶显示器
CN106932951A (zh) * 2017-04-14 2017-07-07 深圳市华星光电技术有限公司 Led灯源及其制造方法、背光模组
CN207664057U (zh) * 2017-06-26 2018-07-27 佛山市香港科技大学Led-Fpd工程技术研究开发中心 一种四面发光的led芯片级封装结构
CN109828410A (zh) * 2018-08-03 2019-05-31 海迪科（南通）光电科技有限公司 一种新型led背光模组的显示器
CN110176448A (zh) * 2018-08-03 2019-08-27 海迪科（南通）光电科技有限公司 面光源模组
CN209325466U (zh) * 2018-09-14 2019-08-30 海迪科（南通）光电科技有限公司 一种球泡灯
CN209325692U (zh) * 2018-09-14 2019-08-30 海迪科（南通）光电科技有限公司 一种日光灯
CN209325530U (zh) * 2018-09-14 2019-08-30 海迪科（南通）光电科技有限公司 一种新型面板灯

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877052A (en) * 1973-12-26 1975-04-08 Bell Telephone Labor Inc Light-emitting semiconductor apparatus for optical fibers
JP6729646B2 (ja) * 2018-08-21 2020-07-22 日亜化学工業株式会社 発光装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120206923A1 (en) * 2011-02-14 2012-08-16 Semiconductor Energy Laboratory Co., Ltd. Optical Element, Light-Emitting Device, Lighting Device, and Method for Manufacturing Optical Element
CN106773315A (zh) * 2017-01-13 2017-05-31 深圳市华星光电技术有限公司 背光模组及液晶显示器
CN106932951A (zh) * 2017-04-14 2017-07-07 深圳市华星光电技术有限公司 Led灯源及其制造方法、背光模组
CN207664057U (zh) * 2017-06-26 2018-07-27 佛山市香港科技大学Led-Fpd工程技术研究开发中心 一种四面发光的led芯片级封装结构
CN109828410A (zh) * 2018-08-03 2019-05-31 海迪科（南通）光电科技有限公司 一种新型led背光模组的显示器
CN110176448A (zh) * 2018-08-03 2019-08-27 海迪科（南通）光电科技有限公司 面光源模组
CN209325466U (zh) * 2018-09-14 2019-08-30 海迪科（南通）光电科技有限公司 一种球泡灯
CN209325692U (zh) * 2018-09-14 2019-08-30 海迪科（南通）光电科技有限公司 一种日光灯
CN209325530U (zh) * 2018-09-14 2019-08-30 海迪科（南通）光电科技有限公司 一种新型面板灯

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4102560A4 (en) * 2020-02-11 2024-03-13 Seoul Viosys Co. Ltd. DISPLAY DEVICE, PIXEL MODULE AND UNIT PIXEL WITH LIGHT-LIGHT DIODE
US20230204190A1 (en) * 2020-05-22 2023-06-29 Beijing Ivisual 3d Technology Co., Ltd. Light-emitting module, display module, display screen and display
EP4050408A4 (en) * 2021-01-04 2022-09-14 Samsung Electronics Co., Ltd. DISPLAY DEVICE AND LIGHT SOURCE DEVICE THEREFOR
US11809042B2 (en) 2021-01-04 2023-11-07 Samsung Electronics Co., Ltd. Display apparatus and light source device thereof

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