WO2019243322A1 - Système laser à diode et procédé de fabrication d'un système laser à diode - Google Patents

Système laser à diode et procédé de fabrication d'un système laser à diode Download PDF

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Publication number
WO2019243322A1
WO2019243322A1 PCT/EP2019/066002 EP2019066002W WO2019243322A1 WO 2019243322 A1 WO2019243322 A1 WO 2019243322A1 EP 2019066002 W EP2019066002 W EP 2019066002W WO 2019243322 A1 WO2019243322 A1 WO 2019243322A1
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WO
WIPO (PCT)
Prior art keywords
connection layer
alloy
diode laser
laser arrangement
cooling device
Prior art date
Application number
PCT/EP2019/066002
Other languages
German (de)
English (en)
Inventor
Stephan Strohmaier
Arne-Heike MEISSNER-SCHENK
Original Assignee
Trumpf Photonics, Inc.
Trumpf Laser- Und Systemtechnik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trumpf Photonics, Inc., Trumpf Laser- Und Systemtechnik Gmbh filed Critical Trumpf Photonics, Inc.
Publication of WO2019243322A1 publication Critical patent/WO2019243322A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/02365—Fixing laser chips on mounts by clamping

Definitions

  • Diode laser arrangement and method for producing a diode laser arrangement Diode laser arrangement and method for producing a diode laser arrangement
  • the invention relates to a diode laser arrangement and a method for producing a diode laser arrangement.
  • High-power diode laser bars generate heat loss, which must be dissipated by the diode laser device in order to achieve a high output power with a long service life, high beam quality, as well as intended and constant beam parameters, for example a high and constant degree of polarization.
  • a diode laser arrangement with such a diode laser device has at least one cooling device, which is thermally coupled to the diode laser device and is designed to dissipate the heat loss. To connect such a cooling device with the
  • Diode laser devices are typically used materials, for example hard solders, which - because of their joining partners - are higher
  • Elastic modulus favor or cause mechanical stresses in a laser-active material of the diode laser device. Such stresses are particularly dependent on the difference in the coefficient of thermal expansion of the material used for joining, for example the brazing material, and the
  • Diode laser device or the at least one cooling device.
  • the invention is based on the object of providing a diode laser arrangement and a method for producing a diode laser arrangement, advantages over known diode laser arrangements in particular with regard to a high level Output power with a long service life, beam quality and
  • the object is achieved in particular by a diode laser arrangement with a diode laser device, at least one cooling device, of a first
  • connection layer and a second connection layer is created.
  • the diode laser device is set up to emit a laser beam.
  • the laser beam can also consist of several partial laser beams.
  • the at least one cooling device is set up to cool the diode laser device.
  • the first connection layer is fixed on a base surface of the diode laser device and the second connection layer is fixed on a contact surface of the at least one cooling device.
  • the first connection layer on the contact surface of the at least one cooling device and the second
  • Connection layer fixed to the base of the diode laser device.
  • the first connection layer and the second connection layer are firmly connected to one another, so that the diode laser device and the at least one cooling device via the first connection layer and the second
  • Connection layer are firmly connected. It is preferable
  • the first connection layer has a large number of nanowires.
  • Nanowires of the type mentioned are, for example, in the standard
  • Each nanowire typically has a diameter in the nanometer range, in particular approximately 100 nm or less than 100 nm.
  • the nanowires typically have a length of at least 0.5 pm and at most 20 mhi, especially 10 mhi.
  • a connection layer of the type mentioned typically has thousands of such nanowires.
  • Cooling device over the first connection layer and the second
  • Connection layer thermally coupled, so that heat transfer from the diode laser device to the at least one cooling device is possible.
  • first connection layer and the second connection layer in a section in which the two layers during assembly of the
  • Diode laser arrangement are arranged to one another or connected to each other, after assembly, at least in some areas, geometrically no longer or only difficult to differentiate from one another. This is particularly the case when the two layers are connected by means of adhesion, diffusion, hooking, latching, and / or toothing.
  • Gear cutting is especially micro gear cutting. Adhesion or diffusion can be achieved in particular by means of suitable heat treatment processes.
  • the diode laser arrangement according to the invention has advantages over the prior art. Due to the fact that the first connection layer has the plurality of nanowires and is firmly connected to the second connection layer, so that the diode laser device and the at least one cooling device are firmly connected to one another via the first connection layer and the second connection layer, stresses in particular in an active material of the diode laser device can can be significantly reduced or even avoided when operating the diode laser arrangement, in particular at high operating temperatures.
  • a connection by means of nanowires of the type mentioned has a particularly high thermal conductivity, so that a particularly effective heat transfer between the diode laser device and the at least one cooling device is realized. Furthermore, such a connection has a particularly high one
  • connection also lasts up to a temperature of 500 ° C or more than 500 ° C.
  • the elasticity of such a connection via the nanowires of the type mentioned is sufficiently high to withstand mechanical stresses in a laser-active material To reduce or prevent diode laser device.
  • Lifetime of the diode laser arrangement in particular the diode laser device, can be significantly increased.
  • a temperature-related and / or mechanical deformation caused by a diode laser bar designed as a diode laser bar can be significantly reduced or even avoided.
  • a high or higher output power can be achieved with a long service life and beam quality.
  • Laser beam for example the degree of polarization, the wavelength or
  • Beam angle are kept constant in narrower areas. Furthermore, the degree of polarization can be increased, for example. In addition, the
  • Diode laser arrangement can be operated as intended, even at higher temperatures, compared to known diode laser arrangements.
  • the diode laser device preferably has at least one emitter
  • Such an emitter is preferably designed as an edge emitter.
  • Such an emitter is preferably a high-performance emitter
  • the diode laser device particularly preferably has a plurality of emitters, the diode laser device in particular having a diode laser bar with a plurality of emitters, which are preferably arranged in a one-dimensional row (array).
  • a diode laser bar is preferably designed as an edge emitter.
  • Such a diode laser bar is particularly preferably designed as a high-power diode laser bar.
  • the at least one cooling device has a heat sink or is designed as such, the heat sink being set up to absorb waste heat from the diode laser device or away from it
  • this has exactly one cooling device of the type mentioned.
  • it has two cooling devices, namely one cooling device and another
  • the cooling device and the further cooling device are each arranged on two opposite sides of the diode laser device.
  • the first cooling device and the further cooling device are each arranged on two opposite sides of the diode laser device.
  • connection layer and the second connection layer between the base surface of the diode laser device and the contact surface of the cooling device. Furthermore, there is a further first connection layer and a further second
  • Cooling device arranged.
  • the other footprint
  • the diode laser device is therefore in particular between the cooling device and the further cooling device, and it can be cooled from two sides.
  • Connection layer applied in each case on the base surface or the contact surface.
  • such an application leads to a non-positive, material and / or positive connection.
  • Such a connection is particularly preferably realized by adhesion, diffusion, hooking, latching, and / or toothing, in particular micro toothing.
  • the base area is in particular an area which has a p-side of the
  • Diode laser device limited or in the area thereof, the further base area in particular delimiting an n side of the diode laser device or in the area thereof, or vice versa.
  • the first connection layer preferably extends over the entire
  • the second connection layer preferably extending over the entire contact surface or the entire base area.
  • the first connection layer preferably has a substrate, which is arranged on the base surface or the contact surface.
  • a substrate has in particular a material or consists of a material which is selected from a group consisting of ceramic, a polymer, glass, silicon, a steel, copper, a copper alloy, and gallium arsenide.
  • the substrate can also have a coating. For example, that
  • Substrate can be designed as a coated copper substrate.
  • the large number of nanowires grew on this substrate.
  • the nanowires originate from the substrate, whereby they are in the
  • the plurality of nanowires preferably forms a dense, grass-like layer, which extends over the entire surface of the substrate.
  • the diode laser arrangement prefferably has a clamping device which is designed to hold the diode laser device, the first connection layer, the second connection layer and / or the at least one cooling device in a predetermined position relative to one another.
  • the diode laser device and the at least one are by means of the clamping device
  • Cooling device can be pressed against one another in order to arrange it in a fixed position relative to one another when the diode laser arrangement is operated as intended.
  • a clamping device it is in particular not necessary that the diode laser device, the first connection layer, the second connection layer and the at least one cooling device are each firmly connected to one another in such a way that the aforementioned components of the diode laser arrangement are held together as intended.
  • Has clamping device wherein in particular the diode laser device and the at least one cooling device are held in a predetermined position relative to one another by means of the first connecting layer and the second connecting layer.
  • An embodiment of the diode laser arrangement is preferred that is characterized in that the nanowires, in particular the plurality of
  • Nanowires have a material or consist of a material which is selected from a group consisting of gold, a gold alloy, silver, a silver alloy, copper, a copper alloy, nickel, a nickel alloy, palladium, one Palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum, and an aluminum alloy.
  • Such materials can be particularly useful
  • the low-stress and heat-conductive connection of the diode laser device with the at least one cooling device can be realized.
  • the nanowires it is also possible for the nanowires to have a different material or to consist of a different material.
  • the second connection layer is continuous in one or more directions, that is to say in particular free of interruptions.
  • the second connection layer has a material or consists of a material which is selected from a group consisting of gold, a gold alloy, silver, a silver alloy, a silver sintered material, copper, a copper alloy, solder and solder paste.
  • suitable materials for the second connection layer are discussed below.
  • the first connection layer and the second have particularly preferably
  • Connection layer on the same material or consist of the same material.
  • a solder paste is understood to mean in particular a material which has at least solder and a flux.
  • the second connection layer is particularly preferably metallic, for example as a thick metal layer or as a metal foil.
  • the second connecting layer can be, for example, as a thick gold layer which preferably has a thickness of at least 1 pm and at most 100 pm be trained.
  • the second connection layer can be formed, for example, as a thick silver layer, which preferably has a thickness of at least 3 pm and at most 100 pm.
  • the second connection layer can be formed as, in particular metallic, contact foil, for example as a contact silver foil.
  • connection layer By means of a coherent formation of the second connection layer, a particularly effective heat transfer can be realized with a low-stress connection of the at least one cooling device to the diode laser device.
  • An embodiment of the diode laser arrangement is preferred, which is characterized in that the second connection layer each has several
  • the second connection layer then has a material or consists of a material which is selected from a group consisting of gold, a gold alloy, silver, a silver alloy, a silver sintered material, copper and a copper alloy. More suitable
  • the second connection layer has a plurality of geometrically delimitable sub-areas, the second connection layer being formed at least in regions as a layer connected in one or more directions after assembly, in particular when the diode laser device is connected to the at least one cooling device.
  • previously geometrically delimitable partial areas can be joined together, in particular by pressure forces and / or elevated temperatures
  • a connection between the diode laser device and the at least one Cooling device is implemented in particular via or by means of the respective subregions of the second connecting layer.
  • the subareas of the second connection layer can each be formed in particular essentially hump-shaped, hemispherical or needle-shaped.
  • such a partial area can have a length and / or a width of at least 20 pm to at most 100 pm.
  • a material of the partial areas of the second connection layer can, for example, have gold or a gold alloy, or consist of gold or a gold alloy. Such partial areas are then also referred to as gold bumps.
  • such partial areas of the second connection layer, in particular gold bumps each have a layer thickness of at least 5 pm and at most 30 pm.
  • Such a second connection layer can be produced or applied, for example, galvanically or via sputtering.
  • a low-voltage or even voltage-free connection between the diode laser device and the at least one cooling device can be realized particularly effectively by means of the partial areas.
  • the second connecting layer has a material or consists of a material which is selected from a group consisting of gold, in particular nanoporous gold, a gold alloy, in particular a nanoporous gold Alloy, silver, a silver alloy, a silver sintered material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium , an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum, an aluminum alloy, indium, an indium alloy, lead, a lead alloy, solder, and solder paste.
  • a tin alloy or a lead alloy can have lead-tin, for example.
  • the second connecting layer it is also possible for the second connecting layer to have a different material or to consist of a different material.
  • the first connection layer and the second connection layer preferably each have the same material or consist of the same material.
  • Such a second connecting layer which has, for example, nanoporous gold or a nanoporous gold alloy, preferably has a layer thickness of at least 20 pm and at most 50 pm.
  • nanoporous gold or a nanoporous gold alloy has pores whose diameter or extent is in the range from at least 1 nm to at most 100 nm.
  • connection layer is particularly advantageous with regard to a low-stress or even stress-free connection of the diode laser device to the at least one cooling device.
  • the second connection layer has a multiplicity of further nanowires.
  • the second connection layer preferably has a substrate which is arranged on the contact surface or the base surface.
  • the large number of further nanowires grew on this substrate.
  • the further nanowires originate from the substrate, essentially extending in the direction of the first connection layer.
  • the plurality of further nanowires preferably forms a dense, grass-like layer which extends over the entire surface of the substrate.
  • a second connection layer comprising further nanowires, which is formed analogously to the first connection layer, is particularly preferred.
  • a second connection layer provided with nanowires causes a particularly low-stress or even
  • the further nanowires have a material or consist of a material which is selected from a group consisting of gold, a gold alloy, silver, a silver alloy, copper, a copper Alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy , Aluminum, and an aluminum alloy.
  • the further nanowires it is also possible for the further nanowires to have a different material or to consist of a different material.
  • the further nanowires of the second connection layer particularly preferably have the same material or consist of the same material as the nanowires of the first connection layer. Such training is especially for a low-tension or even tension-free one
  • Connection of the diode laser device with the at least one cooling device is suitable.
  • An embodiment of the diode laser arrangement is preferred, which is characterized in that the first connection layer and the second
  • Connection layer are non-positively, cohesively and / or positively connected.
  • the first connection layer is preferably connected to the second connection layer by adhesion.
  • the first connection layer is connected to the second connection layer by diffusion.
  • the first connection layer is connected to the second connection layer by hooking, latching, and / or toothing, in particular micro toothing.
  • the second connection layer has a multiplicity of the further nanowires, the multiplicity of the further nanowires and the multiplicity of the nanowires of the first
  • Connection layer are at least partially, in particular firmly, connected to one another by adhesion. Alternatively or in addition, those are preferably
  • a large number of the nanowires and the large number of further nanowires are at least partially, in particular firmly, connected to one another by diffusion.
  • the plurality of nanowires and the plurality of further nanowires are preferably connected to one another at least partially, in particular firmly, by hooking, latching, and / or toothing, in particular micro toothing.
  • An embodiment of the diode laser arrangement is preferred that is characterized in that the diode laser device, in particular in addition to the at least one emitter, has a submount. In particular, this submount then has the base area.
  • the submount is preferably fixedly connected to the at least one cooling device via the first connection layer and the second connection layer.
  • the diode laser device in particular the at least one emitter, is connected to the at least one cooling device via the submount and the first and second connection layers.
  • a connection of the at least one emitter to the submount can be, for example, a solder connection or can be implemented by means of a contact foil.
  • a submount of the type mentioned is designed in particular as a heat spreader, waste heat from the at least one emitter being able to be passed on to the at least one cooling device in a particularly effective manner. Furthermore, various submounts can advantageously be used
  • a further first connection layer which is configured analogously to the first connection layer of the type mentioned
  • a further second connection layer which is configured analogously to the second connection layer of the type mentioned
  • An embodiment of the diode laser arrangement is preferred, which is characterized in that the first connection layer and the second
  • Connection layer have less than 5% voids.
  • a void fraction relates in particular to a total volume of material in the first
  • connection layer and / or the second connection layer. If the second connecting layer has a plurality of geometrically delimitable partial areas, the material volume of these partial areas is meant here in particular. It is possible that the cavities essentially due to a corresponding joining process in the manufacture of the diode laser arrangement essentially between the first
  • Connection layer and the second connection layer are formed. Such a configuration of the two connection layers enables a particularly stable and low-stress connection of the diode laser device to the at least one cooling device.
  • An embodiment of the diode laser arrangement is preferred, which is characterized in that the at least one cooling device and the first connection layer or the second connection layer are set up to make electrical contact with the diode laser device.
  • the at least one cooling device, the first connection layer and the second connection layer are preferably set up to make electrical contact with the diode laser device.
  • the first connection layer and / or the second are / are preferably
  • Connection layer or their respective material is made electrically conductive, so that electrical contacting of the diode laser device via the at least one cooling device and the first connection layer
  • a submount of the type mentioned is designed to be electrically conductive.
  • a connection via the large number of nanowires or further nanowires has a particularly low electrical resistance. This is in particular less than 1 W, in particular in the range of a few meters. In this way, reliable electrical contacting of the diode laser device can be realized.
  • a diode laser arrangement according to one of the previously described embodiments is particularly preferably produced within the scope of the method.
  • a first connection layer which has a multiplicity of nanowires, is arranged on a base surface of a diode laser device and a second connection layer on a contact surface of at least one cooling device, in particular applied to it.
  • the first connection layer is firmly connected to the second connection layer, in particular non-positively, positively and / or materially, so that the diode laser device and the at least one cooling device are firmly connected to one another via the first connection layer and the second connection layer.
  • Diode laser device and the at least one cooling device only
  • Connection layer can be connected to one another, analogously to a
  • a connection of the first connection layer to the second connection layer can be carried out in particular at room temperature.
  • first connection layer is preferably arranged on the contact surface and then the second connection layer on the base surface, or in reverse order, in particular applied thereon.
  • first connection layer and the second connection layer are connected to one another parallel to the application of the second connection layer on the contact surface or on the base surface.
  • Manufacturing process according to the described method is advantageous, for example, if the second connection layer has solder or solder paste, or consists of solder or solder paste.
  • An embodiment of the method is preferred which is characterized by distinguishes that the first connection layer and the second connection layer are connected to one another by means of a bonding method.
  • the bonding process is a process which is selected from a group consisting of thermocompression processes, ultrasonic bonding and vacuum bonding. Ultrasonic bonding is also known in particular under the term wire bonding. In the vacuum bonding of the type mentioned
  • the diode laser arrangement can be produced particularly economically by means of such methods.
  • diode laser arrangement on the one hand and of the method for producing a diode laser arrangement on the other hand are to be understood as complementary to one another.
  • Features of the diode laser arrangement that were explained in connection with the method are preferably individually or combined with one another.
  • Features of a preferred embodiment of the diode laser arrangement are preferably individually or combined with one another.
  • This is preferably characterized by at least one method step which is caused by at least one feature of an inventive or preferred embodiment of the diode laser arrangement.
  • the diode laser arrangement is preferably distinguished by at least one feature which is caused by at least one step of an inventive or preferred embodiment of the method.
  • FIG. 1 shows a schematic illustration of a first exemplary embodiment of a diode laser arrangement in longitudinal section
  • FIG. 2 shows a schematic illustration of a second exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 3 shows a schematic illustration of a third exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 4 shows a schematic illustration of a fourth exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 5 shows a schematic illustration of a fifth exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 6 shows a schematic illustration of a sixth exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 7 shows a schematic illustration of a seventh exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 8 shows a schematic illustration of an eighth exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 9 shows a schematic illustration of a ninth exemplary embodiment of the diode laser arrangement in longitudinal section
  • FIG. 10 shows a schematic illustration of a tenth exemplary embodiment of the diode laser arrangement in longitudinal section
  • Figure 11 is a schematic representation of an eleventh embodiment of the diode laser arrangement in longitudinal section.
  • Figure 12 is a schematic representation of a twelfth embodiment of the diode laser arrangement in longitudinal section.
  • a first embodiment of a diode laser arrangement 1 is shown schematically in longitudinal section.
  • a longitudinal section is in particular a section along a schematically illustrated laser beam axis L one
  • the diode laser arrangement 1 has a diode laser device 3, which
  • the diode laser device 3 here has at least one emitter, in particular a high-power diode laser bar, which is designed, for example, as an edge emitter. Furthermore, the
  • Diode laser arrangement 1 has at least one cooling device 5, which is set up to cool the diode laser device 3.
  • the diode laser arrangement 1 has exactly such a cooling device 5.
  • the diode laser arrangement 1 also has a first connection layer 7 and a second connection layer 9.
  • the first connection layer 7 is on here a contact surface 11 of the cooling device 5 arranged fixed, in particular applied thereon.
  • the second connection layer 9 is here firmly arranged on a base 13 of the diode laser device 3, in particular applied thereon.
  • the first connection layer 7 is firmly connected to the second connection layer 9, so that the diode laser device 3 and the cooling device 5 via the first
  • Connection layer 7 and the second connection layer 9 are firmly connected to one another. Such a connection is shown schematically in FIG. 1 with a plus sign P.
  • FIGS. 2 to 12 an exemplary assembly process is shown schematically in FIGS. 2 to 12 by means of the plus sign P.
  • Diode laser arrangement 1 has a further cooling device of the type mentioned, which is arranged on a side of the diode laser device 3 opposite the cooling device 5.
  • a further cooling device is in particular by means of a further first connection layer which is formed analogously to the first connection layer 7 and an analogue to the second
  • Connection layer 9 formed further second connection layer, connected to the diode laser device 3.
  • the further first connection layer and the further second connection layer are each between a further contact surface of the further cooling device and a further base surface 15 of the
  • the further base 15 is
  • the first connection layer 7 has a large number of nanowires.
  • the first connection layer 7 has a substrate, which is arranged on the contact surface 11, in particular is applied thereon, the large number of nanowires being grown on the substrate.
  • the substrate which is arranged on the contact surface 11, in particular is applied thereon, the large number of nanowires being grown on the substrate.
  • Nanowires a material or consist of a material that is selected is from a group consisting of gold, a gold alloy, silver, a silver alloy, copper, a copper alloy, nickel, a nickel alloy,
  • the nanowires Palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum, and an aluminum alloy.
  • the nanowires it is also possible for the nanowires to have a different material or to consist of a different material.
  • the second connecting layer 9 is formed continuously in one or more directions.
  • the second connection layer 9 is optionally formed as a thick metal layer.
  • the second connection layer 9 optionally has a material or consists of a material which is selected from a group consisting of gold, in particular nanoporous gold, a gold alloy, in particular a nanoporous gold alloy, silver, a silver alloy, a silver -Sintered material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, one Germanium alloy, tin, a tin alloy, aluminum, an aluminum alloy, indium, an indium alloy, lead, a lead alloy, solder and solder paste.
  • the second connecting layer it is also possible for the second connecting layer to have a different material or to consist of a different material.
  • first connection layer 7, in particular the multiplicity of nanowires, and the second connection layer 9 are connected to one another in a force-locking, material-locking and / or form-locking manner.
  • a connection can be realized, for example, by adhesion, diffusion, hooking, latching, and / or toothing, in particular micro toothing.
  • the diode laser device 3 has a submount, which then has the base area 13 as an example.
  • a submount is not explicitly shown in FIG. 1.
  • the at least one emitter is the
  • Diode laser device 3 arranged on such a submount, wherein it over the submount, the first connection layer 7 and the second connection layer 9 are connected to the cooling device 5. It is possible that the
  • Diode laser device 3 has a further submount, which in
  • the first connection layer 7 and the second connection layer 9 have less than 5% voids.
  • cooling device 5 and the first connection layer 7 and / or the second connection layer 9 are set up to make electrical contact with the diode laser device 3.
  • FIG. 2 shows a second exemplary embodiment of the diode laser arrangement 1 in FIG
  • the first connection layer 7 is arranged on the contact surface 11 and the second connection layer 9 on the base surface 13.
  • the second connecting layer 9 has a plurality of subregions, each of which can be geometrically delimited, of which two subregions are identified by way of example with the reference symbols 9 ′, 9 “. It is obvious that the second connection layer 9 can have significantly more such partial areas 9 ′′, 9 ′′ than are shown in FIG. 2 in a simplified manner.
  • Subareas 9 ′′, 9 ′′ are each arranged at a distance from one another on the base area 13, in particular applied to the latter.
  • they each have a material or consist of a material which is selected from a group consisting of gold, in particular nanoporous gold, a gold alloy, in particular a nanoporous gold alloy, silver, a silver alloy, a silver sinter - Material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, Tin, a tin alloy, aluminum, one
  • Connection layer 9 in particular the first connection layer 7 and the
  • Sub-areas 9 ', 9 " non-positively, materially and / or positively connected.
  • FIG. 3 shows a third exemplary embodiment of the diode laser arrangement 1 in
  • the second connection layer 9 here has a large number of further nanowires.
  • the second connection layer 9 is formed analogously to the first connection layer 7.
  • the further nanowires have a material or consist of a material which is selected from a group consisting of gold, a gold alloy, silver, a silver alloy, copper, a copper alloy, nickel, a nickel alloy, Palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum and an aluminum alloy.
  • the further nanowires it is also possible for the further nanowires to have a different material or to consist of a different material.
  • the nanowires of the first connection layer 7 and the further nanowires of the second connection layer 9 are connected to one another in a force-locking, material-locking and / or form-locking manner.
  • the nanowires and the further nanowires are connected to one another by adhesion, diffusion, hooking, latching, and / or toothing, in particular micro toothing.
  • FIG. 4 shows a fourth exemplary embodiment of the diode laser arrangement 1 in FIG Longitudinal section shown schematically. Identical and functionally identical elements are provided with the same reference symbols, so that reference is made to the preceding description.
  • This exemplary embodiment is designed essentially analogously to the exemplary embodiment according to FIG. 1, the second being designed continuously in one or more directions according to FIG.
  • Connection layer 9 is formed substantially thinner, in particular as a metal foil.
  • FIG. 5 shows a fifth exemplary embodiment of the diode laser arrangement 1 in
  • connection layer 9 is formed continuously in one or more directions. It assigns the second
  • Connection layer 9 for example solder or solder paste, or consists of solder or solder paste.
  • the diode laser device 3 is here firmly connected to the cooling device 5 via the second connection layer 9 and the first connection layer 7.
  • An exemplary assembly process is represented by means of the plus signs P ', P ".
  • the diode laser device 3, the second connection layer 9 and a composite with the cooling device 5 and the first connection layer 7 arranged thereon are connected to one another in one process step.
  • Such a connection can also be carried out in several process steps, as described below by way of example.
  • first the second connection layer 9 and the first connection layer 7, which is arranged on the cooling device 5, can be connected to one another (P ′′), the diode laser device 3 and the second connection layer 9 subsequently being connected to one another (P ’).
  • the second connection layer 9 and the diode laser device 3 can first be connected to one another, with this connection then being connected to the first connection layer 7 arranged on the cooling device 5.
  • FIG. 6 identical and functionally identical elements are provided with the same reference symbols, so that insofar as reference is made to the preceding description.
  • 7 shows a seventh exemplary embodiment of the diode laser arrangement 1 schematically in longitudinal section. Identical and functionally identical elements are provided with the same reference symbols, so that reference is made to the preceding description.
  • the first connection layer 7 is arranged on the base 13 of the diode laser device 3, in particular applied to it.
  • the second connection layer 9 is arranged on the contact surface 11 of the cooling device 5, in particular applied to it.
  • the second connection layer 9 is continuous in one or more directions and has, for example, solder or solder paste, or consists of solder or solder paste.
  • the first connection layer 7 and the second connection layer 9 are therefore provided in the reverse arrangement compared to FIG.
  • FIG. 8 shows an eighth exemplary embodiment of the diode laser arrangement 1 in FIG.
  • the second connecting layer 9 is formed here as a thick metal layer which is continuous in one or more directions, it being arranged on the cooling device 5, in particular being applied thereon.
  • a ninth exemplary embodiment of the diode laser arrangement 1 is shown schematically in longitudinal section in FIG. Identical and functionally identical elements are provided with the same reference symbols, so that reference is made to the preceding description.
  • the second connection layer 9 has a plurality of geometrically delimitable sub-regions 9 ′′, 9 ′′, which are arranged on the contact surface 11, in particular are applied thereon.
  • a tenth exemplary embodiment of the diode laser arrangement 1 is shown schematically in longitudinal section in FIG. Identical and functionally identical elements are provided with the same reference symbols, so that reference is made to the preceding description.
  • This embodiment is essentially designed analogous to the embodiment of Figure 4, the second
  • Connection layer 9 is designed, for example, as a silver foil.
  • FIG. 11 shows an eleventh embodiment of the diode laser arrangement 1 in FIG. 11
  • Connection layer 9 is formed continuously in one or more directions and has, for example, a material or consists of a material which is selected from a group consisting of nanoporous gold and a nanoporous gold alloy.
  • FIG. 12 schematically shows a twelfth embodiment of the diode laser arrangement 1 in longitudinal section. Identical and functionally identical elements are provided with the same reference symbols, so that reference is made to the preceding description. This embodiment is similar to that
  • Connection layer 7 is arranged on the diode laser device 3, and which, for example, nanoporous gold or a nanoporous gold alloy
  • the diode laser device 3 can optionally have a submount, which is not shown separately in the drawing, and has the base area 13.
  • the at least one emitter is then arranged on a side of the submount lying opposite the base area 13.
  • the first connection layer 7 becomes firm with the second connection layer 9,
  • Connection layer 7 and the second connection layer 9 are connected to one another.
  • the first connection layer 7 and the second connection layer 9 are connected to one another by means of a bonding method.
  • the bonding process is a process which is selected from a group consisting of thermocompression processes, ultrasound bonding and vacuum bonding.
  • a low-voltage or even voltage-free connection of the diode laser device 3 to the at least one cooling device 5 can be implemented.

Abstract

L'invention concerne un système laser à diode (1) comportant un dispositif laser à diode (3) qui est conçu pour émettre un faisceau laser, au moins un dispositif de refroidissement (5) qui est conçu pour refroidir le dispositif laser à diode (3), une première couche de liaison (7) et une seconde couche de liaison (9), la première couche de liaison (7) étant agencée à demeure sur une surface de base (13) du dispositif laser à diode (3) et la seconde couche de liaison (9) étant agencée à demeure sur une surface d'appui (11) du ou des dispositifs de refroidissement (5), ou la première couche de liaison (7) étant agencée à demeure sur la surface d'appui (11) et la seconde couche de liaison (9) étant agencée à demeure sur la surface de base (13). La première couche de liaison (7) est reliée à demeure à la seconde couche de liaison (9), de sorte que le dispositif laser à diode (3) et le ou les dispositifs de refroidissement (5) sont reliés à demeure l'un à l'autre par l'intermédiaire de la première couche de liaison (7) et de la seconde couche de liaison (9). Selon l'invention, la première couche de liaison (7) présente une pluralité de nanofils.
PCT/EP2019/066002 2018-06-21 2019-06-18 Système laser à diode et procédé de fabrication d'un système laser à diode WO2019243322A1 (fr)

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DE102018210134.5A DE102018210134A1 (de) 2018-06-21 2018-06-21 Diodenlaseranordnung und Verfahren zum Herstellen einer Diodenlaseranordnung
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DE102022102089A1 (de) 2022-01-28 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserpackage und verfahren zur herstellung eines laserpackage
DE102022119151A1 (de) 2022-07-29 2024-02-01 Ams-Osram International Gmbh Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls

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DE102007001743A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen
US20180062348A1 (en) * 2016-08-30 2018-03-01 Won Tae Lee High-power laser packaging utilizing carbon nanotubes
WO2019086619A1 (fr) * 2017-11-03 2019-05-09 Jenoptik Laser Gmbh Laser à diodes

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