WO2019228027A1 - Non-plasma etching method - Google Patents

Non-plasma etching method Download PDF

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WO2019228027A1
WO2019228027A1 PCT/CN2019/079014 CN2019079014W WO2019228027A1 WO 2019228027 A1 WO2019228027 A1 WO 2019228027A1 CN 2019079014 W CN2019079014 W CN 2019079014W WO 2019228027 A1 WO2019228027 A1 WO 2019228027A1
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Prior art keywords
gas
etching method
silicon dioxide
plasma etching
silicon nitride
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PCT/CN2019/079014
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French (fr)
Chinese (zh)
Inventor
王春
郑波
马振国
吴鑫
王晓娟
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北京北方华创微电子装备有限公司
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Priority to KR1020207031563A priority Critical patent/KR102494938B1/en
Priority to JP2020567118A priority patent/JP7187581B2/en
Publication of WO2019228027A1 publication Critical patent/WO2019228027A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Definitions

  • the present disclosure belongs to the field of semiconductors, and particularly relates to a non-plasma etching method.
  • etching processes are performed to form a specific pattern.
  • most of the etching processes focus on the etching of silicon dioxide (SiO 2 ) and silicon nitride (SiN). Since the two films are usually adjacent on the workpiece to be processed, both are affected by the etching process.
  • the requirements for the silicon dioxide / silicon nitride etching selectivity are also different.
  • a higher silicon nitride / silicon dioxide etching selectivity ratio is required to prevent the shallow trench isolation oxide (STI oxide) from being over-etched.
  • the silicon nitride / silicon dioxide etching selection ratio needs to be as high as 1: 1.
  • a higher silicon dioxide / silicon nitride etching selection ratio is required to avoid causing damage to the SiN sidewall spacer.
  • etching Hydrofluoric acid solution (HF) and hot phosphoric acid solution (H 3 PO 4 ) are used to etch silicon dioxide and silicon nitride, respectively.
  • HF Hydrofluoric acid solution
  • H 3 PO 4 hot phosphoric acid solution
  • the etching products are all water-soluble substances, and after the reaction is completed, they are washed with DI water.
  • the reaction principle is as follows:
  • the silicon dioxide When the silicon dioxide is etched, the workpiece to be processed is placed in a hydrofluoric acid solution, and the resulting etching product SiF4 is dissolved in the solution, and then washed with deionized water and blow-dried.
  • silicon nitride When silicon nitride is etched, the workpiece to be processed is placed in a hot phosphoric acid solution, and the resulting etching products Si (OH) 4 and NH 4 H 2 PO 4 are dissolved in the solution, and then rinsed and dried with deionized water.
  • the silicon dioxide / silicon nitride etching selection ratio (n: 1-1: n, n ⁇ 1) can be effectively adjusted.
  • the two etching processes in this technical solution have a high selection ratio.
  • the etching selection ratio of silicon nitride can reach 10: 1.
  • the etching selection ratio for silicon dioxide can reach 150: 1. Therefore, the silicon dioxide and silicon nitride films can be etched separately, and the etching amount of silicon nitride and silicon dioxide can be effectively adjusted by changing the etching time of these two etching processes.
  • the present disclosure proposes a non-plasma etching method, which can effectively adjust the silicon dioxide / silicon nitride etching selection ratio in a wide range, thereby not only meeting the requirements of different applications, Reduce process complexity and equipment cost, and can avoid plasma damage and fine structure adhesion.
  • the present disclosure proposes a non-plasma etching method, including the following steps: S1, passing a gas mixture containing an etching gas and a catalytic gas into a reaction chamber to perform silicon dioxide and silicon nitride Etching
  • the etching gas is used to etch silicon dioxide and silicon nitride; the catalytic gas is used to increase the etching rate; the flow ratio of each gas component in the gas mixture is based on the required silicon dioxide / nitrogen Silicone etching selectivity is determined.
  • the etching gas includes hydrogen fluoride;
  • the catalytic gas includes a first catalytic gas for promoting a reaction between the hydrogen fluoride and silicon dioxide, and for promoting the hydrogen fluoride and silicon nitride A second catalytic gas for the reaction; wherein the first catalytic gas includes a hydroxy compound; and the second catalytic gas includes a fluorine-containing gas.
  • the hydrogen fluoride, the hydroxyl compound, and the fluorine-containing gas are simultaneously introduced into the reaction chamber to simultaneously etch silicon dioxide and silicon nitride.
  • step S1 further includes the following sub-steps:
  • step S1 further includes the following sub-steps:
  • the hydrogen fluoride and the fluorine-containing gas are passed into the reaction chamber to etch silicon dioxide.
  • step S1 the following steps are further included:
  • step S2 Determine whether the etching thickness in step S1 has reached a predetermined range, and if not, return to step S1; if yes, the process ends.
  • step S11 between the step S11 and the step S12, the following steps are further included:
  • step S21 Determine whether the etching thickness in step S11 has reached a predetermined range; if not, return to step S11; if yes, proceed to step S12;
  • step S12 After the step S12, the following steps are further included:
  • step S22 It is determined whether the etching thickness in step S12 has reached a predetermined range, and if not, the process returns to step S12; if it is, the process ends.
  • step S11 between the step S11 and the step S12, the following steps are further included:
  • a purge gas is passed into the reaction chamber to remove the residual gas in the reaction chamber.
  • the silicon dioxide and silicon nitride are etched one or more times so that the etching thickness of the silicon dioxide and silicon nitride reaches the final requirement.
  • the step S11 and the step S12 are alternately performed at least twice, so that the etching thickness of the silicon dioxide and silicon nitride reaches a final requirement.
  • the step S11 and the step S12 are performed in the same reaction chamber or different reaction chambers.
  • the fluorine-containing gas includes one or more of F 2 , XeF 2 , and ClF 3 .
  • the hydroxy compound includes an alcohol compound or a phenol compound.
  • the flow rate of the fluorine-containing gas is 0.5 times the flow rate of the hydrogen fluoride.
  • the flow rate of the hydroxy compound is 1-2 times the flow rate of the hydrogen fluoride.
  • the flow rate ratio of the fluorine-containing gas to the hydroxyl compound ranges from 10: 1 to 1:10.
  • the flow rate of the fluorine-containing gas is less than or equal to 400 sccm.
  • the flow rate of the hydroxy compound is less than or equal to 1000 sccm.
  • the flow rate of the hydrogen fluoride ranges from 50 to 1000 sccm.
  • the pressure of the reaction chamber is less than or equal to 300 Torr; the temperature of the reaction chamber is 15-105 ° C.
  • the non-plasma etching method provided by the present disclosure can pass through a gas mixture containing an etching gas and a catalytic gas into the reaction chamber, and can realize the etching of silicon dioxide and silicon nitride in a non-plasma manner, so that Avoid plasma damage and adhesion of fine structures.
  • the flow ratio of each gas component in the above-mentioned gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio, so that the silicon dioxide / silicon nitride etching selection ratio can be effectively adjusted in a wide range, and further, Meet the requirements of different applications and reduce process complexity and equipment costs.
  • FIG. 1 is a schematic diagram of microstructure adhesion after a wet process in the prior art
  • FIG. 2 is a flowchart of a non-plasma dry etching method provided by a first embodiment of the present disclosure
  • FIG. 3 is a flowchart of a non-plasma dry etching method provided by a second embodiment of the present disclosure
  • FIG. 4 is a flowchart of a non-plasma dry etching method provided by a third embodiment of the present disclosure
  • FIG. 5 is a flowchart of a non-plasma dry etching method according to a fourth embodiment of the present disclosure.
  • FIG. 6 is a flowchart of a non-plasma dry etching method according to a fifth embodiment of the present disclosure.
  • a non-plasma dry etching method includes the following steps:
  • a gas mixture containing an etching gas and a catalytic gas is passed into the reaction chamber to etch silicon dioxide and silicon nitride.
  • the etching gas is used to etch silicon dioxide and silicon nitride; the catalytic gas is used to increase the etching rate.
  • the flow ratio of each gas component in the gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio.
  • the non-plasma etching method provided by the present disclosure can pass through a gas mixture containing an etching gas and a catalytic gas into the reaction chamber, and can realize the etching of silicon dioxide and silicon nitride in a non-plasma manner, so that Avoid plasma damage and adhesion of fine structures.
  • the flow ratio of each gas component in the above-mentioned gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio, so that the silicon dioxide / silicon nitride etching selection ratio can be effectively adjusted in a wide range, and further, Meet the requirements of different applications and reduce process complexity and equipment costs.
  • the etching gas includes hydrogen fluoride (HF).
  • Hydrogen fluoride can be used to etch silicon dioxide and silicon nitride. However, the rate of etching using hydrogen fluoride alone is low, so the present disclosure utilizes a catalytic gas to increase the rate of etching.
  • the catalytic gas includes a first catalytic gas for promoting a reaction between hydrogen fluoride and silicon dioxide, and a second catalytic gas for promoting a reaction between hydrogen fluoride and silicon nitride; wherein the first catalytic gas includes a hydroxyl compound.
  • Hydroxyl compounds include alcohol compounds or phenol compounds, wherein the alcohol compounds include one or more of methanol, ethanol, propanol, isopropanol, butanol, isobutanol, and the like; phenol compounds include phenol, benzene One or more of diphenol, methylphenol, and the like.
  • the first catalytic gas is a hydroxy compound with a lower boiling point, such as methanol, which can take out a small amount of water generated by the reaction and reduce the residual amount of water on the surface of the workpiece to be processed, thereby avoiding the occurrence of fine structure adhesion.
  • a hydroxy compound with a lower boiling point such as methanol
  • the reaction principle of hydrogen fluoride, methanol and silica is as follows:
  • the above-mentioned gas mixture of hydrogen fluoride and methanol can be applied to a process requiring an SiO 2 / SiN etching selection ratio of n: 1 (n ⁇ 1).
  • the second catalytic gas includes a fluorine-containing gas.
  • the fluorine-containing gas includes one or more of F 2 , XeF 2 , ClF 3 and the like.
  • the fluorine-containing gas can increase the etching rate, and at the same time increase the etching selectivity ratio of silicon nitride to silicon dioxide to avoid micro-structure adhesion.
  • the second catalytic gas is F 2 .
  • the reaction principle of hydrogen fluoride, F 2 and silicon nitride is as follows:
  • the above-mentioned gas mixture of hydrogen fluoride and F2 can be applied to a process requiring a SiO 2 / SiN etching selection ratio of 1: n (n ⁇ 1).
  • the non-plasma dry etching method provided in the second embodiment of the present disclosure is a further improvement based on the first embodiment described above. Specifically, in the above step S1, hydrogen fluoride, a hydroxy compound, and a fluorine-containing gas are simultaneously introduced into the reaction chamber to simultaneously etch silicon dioxide and silicon nitride.
  • the non-plasma etching method provided in the second embodiment of the present disclosure will be described by taking the etching gas as hydrogen fluoride, the first catalytic gas as methanol, and the second catalytic gas as F 2 as examples. Specifically, the non-plasma etching method includes the following steps:
  • step 103 Determine whether the etching thickness in step 101 reaches a predetermined range, and if not, return to step 101; if yes, the process ends.
  • the flow ratio of each gas component in the gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio. Specifically, by adjusting the flow ratio of hydrogen fluoride, F 2 and methanol, the etching selection ratio (n: 1-1: n, n ⁇ 1) of silicon dioxide / silicon nitride can be effectively adjusted in a wide range, and can be applied to the required etching. In a process with an etching selection ratio ranging from n: 1-1: n (SiO 2 / SiN, n ⁇ 1), the process complexity and equipment cost can be reduced.
  • phenol can also be used instead of the above-mentioned methanol, which can also effectively prevent the occurrence of fine structure adhesion, and can effectively adjust the etching of silicon dioxide / silicon nitride in a wide range by adjusting the flow ratio of hydrogen fluoride, F 2 and phenol Selection ratio (n: 1-1: n, n ⁇ 1).
  • the flow rate of the fluorine-containing gas is 0.5 times the flow rate of the hydrogen fluoride.
  • the flow rate of the fluorine-containing gas is less than or equal to 400 sccm, and more preferably 20-200 sccm.
  • the flow rate of the hydroxy compound is 1-2 times that of the hydrogen fluoride.
  • the flow rate of the hydroxy compound is 1,000 sccm or less, and more preferably 400 sccmm or less.
  • the value range of the flow rate of hydrogen fluoride is 50-1000 sccm, and more preferably 20-400 sccm.
  • the value of the flow ratio of the fluorine-containing gas to the hydroxyl compound ranges from 10: 1-1: 10, and preferably 2: 1-1: 4.
  • the process pressure is 0-300 Torr, preferably 20-150 Torr; the process temperature is 15-105 ° C, preferably 60-80 ° C.
  • hydrogen fluoride, a hydroxy compound, and a fluorine-containing gas are continuously introduced at a predetermined flow ratio until the etching thicknesses of silicon dioxide and silicon nitride reach the final requirements. That is, the target etch thicknesses of silicon dioxide and silicon nitride are achieved in one shot.
  • the non-plasma etching method provided by the third embodiment of the present disclosure is different from the above-mentioned second embodiment in that the etching of silicon dioxide and silicon nitride is performed in multiple sub-steps, each time In the sub-steps, hydrogen fluoride, a hydroxy compound, and a fluorine-containing gas are passed in at a predetermined flow ratio for a period of time, so that both the silicon dioxide and the silicon nitride reach a predetermined etching thickness. After completing several sub-steps, the etched thickness of silicon dioxide and silicon nitride meets the final requirements.
  • the flow ratios of the hydrogen fluoride, the hydroxyl compound, and the fluorine-containing gas used in the multiple sub-steps may be the same or different.
  • the non-plasma etching method provided by the third embodiment of the present disclosure will be described below using the etching gas as hydrogen fluoride, the first catalytic gas as methanol, and the second catalytic gas as F 2 as examples.
  • the non-plasma etching method performs the etching of silicon dioxide and silicon nitride in multiple sub-steps, which are a first sub-step, a second sub-step, and so on.
  • the first sub-step includes the following steps:
  • step 203 Determine whether the etching thickness in step 201 has reached the first etching thickness, and if not, return to step 201; if yes, perform the second sub-step.
  • the second substep includes the following steps:
  • step 303 Determine whether the etching thickness in step 301 has reached the second etching thickness, and if not, return to step 301; if yes, perform the third sub-step.
  • the non-plasma etching method provided by the fourth embodiment of the present disclosure is different from the above-mentioned second embodiment in that the silicon dioxide is etched first, and then the silicon nitride is etched. Alternatively, the silicon nitride is etched first, and then the silicon dioxide is etched.
  • step S1 further includes the following sub-steps:
  • step S1 further includes the following sub-steps:
  • step S12 hydrogen fluoride and a fluorine-containing gas are introduced into the reaction chamber to etch the silicon dioxide.
  • purge gas is introduced into the reaction chamber to remove the residual gas in the reaction chamber.
  • step S12 is not affected by the residual gas in step S11.
  • the purge gas includes an inert gas.
  • the following is an example of the present disclosure by etching silicon nitride first, then silicon dioxide, and using an etching gas of hydrogen fluoride, a first catalytic gas of methanol and a second catalytic gas of F 2
  • the non-plasma etching method provided in the fourth embodiment is described. Specifically, the non-plasma etching method includes the following steps:
  • step 403. Determine whether the etching thickness of step 401 reaches a predetermined range, and if not, return to step 401; if yes, proceed to step 404;
  • step 407 Determine whether the etching thickness in step 405 reaches a predetermined range; if not, return to step 405; if yes, the process ends.
  • hydrogen fluoride and a hydroxy compound are continuously fed in at a predetermined flow ratio until the etching thickness of the silicon nitride reaches the final requirement, that is, the one-time etching reaches the target etching thickness of the silicon nitride.
  • hydrogen fluoride and fluorine-containing gas are continuously introduced at a predetermined flow ratio until the etching thickness of the silicon dioxide reaches the final requirement, that is, the one-time etching reaches the target etching thickness of the silicon dioxide.
  • the non-plasma etching method provided by the fifth embodiment of the present disclosure is different from the fourth embodiment described above in that the etching of silicon dioxide is divided into multiple sub-steps, and the silicon nitride is The etching is performed in multiple sub-steps. In addition, multiple sub-steps of etching silicon dioxide and multiple sub-steps of etching silicon nitride are alternately performed until the etching thickness of silicon dioxide and silicon nitride reaches the final requirement.
  • the following is an example in which silicon nitride is etched first, and then silicon dioxide is etched.
  • the etching gas is hydrogen fluoride
  • the first catalytic gas is methanol
  • the second catalytic gas is F 2 .
  • the non-plasma etching method provided in the fifth embodiment is described. Specifically, the non-plasma etching method includes the following steps:
  • step 503 Determine whether the etching thickness in step 501 reaches the first etching thickness, and if not, return to step 501; if yes, proceed to step 504;
  • step 507 Determine whether the etching thickness in step 505 has reached the second etching thickness, and if not, return to step 505; if yes, proceed to step 508;
  • step 508 Determine whether the etching thicknesses of silicon dioxide and silicon nitride have reached the final requirements; if not, return to step 501; if yes, the process ends.
  • the non-plasma etching method provided in this embodiment has better flexibility, and the etching of silicon nitride and silicon dioxide can be performed in the same reaction chamber, that is, only one set of process equipment is needed to complete the dioxide Etching of silicon and silicon nitride can not only reduce process complexity and equipment costs, but also increase productivity. Of course, it is also possible to etch silicon nitride in one reaction chamber, and then place the workpiece to be processed in another reaction chamber to etch silicon dioxide.
  • the etching rate of silicon nitride is slower at this time, so that the silicon dioxide can be significantly improved.
  • the etching selection ratio of silicon nitride conversely, when only hydrogen fluoride and hydroxyl compounds are passed in, the etching selection ratio of silicon nitride to silicon dioxide can be significantly improved.
  • non-plasma dry etching methods provided by the third to fifth embodiments of the present disclosure are the same as the non-plasma dry etching methods provided by the second embodiment of the present disclosure, and will not be repeated here. description.
  • the non-plasma etching methods provided by the above embodiments of the present disclosure can pass non-plasma to the silicon dioxide and silicon oxide by introducing a gas mixture containing an etching gas and a catalytic gas into the reaction chamber. Etching of silicon nitride can avoid plasma damage and fine structure adhesion.
  • the flow ratio of each gas component in the above-mentioned gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio, so that the silicon dioxide / silicon nitride etching selection ratio can be effectively adjusted in a wide range, and further, Meet the requirements of different applications and reduce process complexity and equipment costs.

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Abstract

Provided is a non-plasma etching method, comprising the following steps: S1: introducing a gas mixture containing an etching gas and a catalytic gas into a reaction chamber so as to etch silicon dioxide and silicon nitride; the etching gas is used for etching silicon dioxide and silicon nitride; the catalytic gas is used for increasing the etching rate; the flow ratio of the gas components in the gas mixture is determined according to a desired silicon dioxide/silicon nitride etch selectivity ratio. The described non-plasma etching method effectively adjusts the silicon dioxide/silicon nitride etching selectivity ratio across a wide range, such that not only are the requirements of different applications met and process complexity and equipment costs reduced, but plasma damage and fine structure adhesion can also be prevented.

Description

非等离子刻蚀方法Non-plasma etching 技术领域Technical field
本公开属于半导体领域，具体涉及一种非等离子刻蚀方法。The present disclosure belongs to the field of semiconductors, and particularly relates to a non-plasma etching method.
背景技术Background technique
半导体前道工艺中，为了满足设计需求，要进行多道刻蚀工艺来形成特定的图形。目前刻蚀工艺大多集中在对二氧化硅(SiO 2)和氮化硅(SiN)的刻蚀。由于在待加工工件上，这两种薄膜通常是相邻的，二者均会受到刻蚀工艺的影响。 In the semiconductor front-end process, in order to meet the design requirements, multiple etching processes are performed to form a specific pattern. At present, most of the etching processes focus on the etching of silicon dioxide (SiO 2 ) and silicon nitride (SiN). Since the two films are usually adjacent on the workpiece to be processed, both are affected by the etching process.
对于不同的应用，在进行刻蚀工艺时，对于二氧化硅/氮化硅刻蚀选择比(selectivity)的要求也不同。例如，形成SiN侧墙(spacer)时，需要较高的氮化硅/二氧化硅刻蚀选择比，以避免浅沟道隔离氧化层(STI oxide)被过度刻蚀。又如，去除自然氧化层(native oxide)时，为了保证侧壁上的氮化硅和二氧化硅的厚度一致，则需要氮化硅/二氧化硅刻蚀选择比尽量达到1:1。再如，去除栅极(gate)表面上的自然氧化层时，要求较高的二氧化硅/氮化硅刻蚀选择比，以避免造成SiN侧墙损伤。For different applications, when the etching process is performed, the requirements for the silicon dioxide / silicon nitride etching selectivity are also different. For example, when forming a SiN spacer, a higher silicon nitride / silicon dioxide etching selectivity ratio is required to prevent the shallow trench isolation oxide (STI oxide) from being over-etched. For another example, when removing the native oxide, in order to ensure that the thicknesses of the silicon nitride and silicon dioxide on the sidewalls are consistent, the silicon nitride / silicon dioxide etching selection ratio needs to be as high as 1: 1. For another example, when removing the natural oxide layer on the gate surface, a higher silicon dioxide / silicon nitride etching selection ratio is required to avoid causing damage to the SiN sidewall spacer.
现有技术的方案大多只能满足其中一种应用，例如，现有技术中一种常用的技术方案是采用湿法刻蚀。利用氢氟酸溶液(HF)和热磷酸溶液(H 3PO 4)分别刻蚀二氧化硅和氮化硅。刻蚀产物均为水溶性物质，反应结束后利用去离子水(DI water)清洗。其反应原理如下： Most of the prior art solutions can only meet one of the applications. For example, a commonly used technical solution in the prior art is wet etching. Hydrofluoric acid solution (HF) and hot phosphoric acid solution (H 3 PO 4 ) are used to etch silicon dioxide and silicon nitride, respectively. The etching products are all water-soluble substances, and after the reaction is completed, they are washed with DI water. The reaction principle is as follows:
HF+SiO 2→SiF 4+H2O     (1) HF + SiO 2 → SiF 4 + H2O (1)
H 3PO 4(hot)+SiN+H 2O→Si(OH) 4+NH 4H 2PO 4  (2) H 3 PO 4 (hot) + SiN + H 2 O → Si (OH) 4 + NH 4 H 2 PO 4 (2)
刻蚀二氧化硅时，将待加工工件置于氢氟酸溶液中，生成的刻蚀产物SiF4溶解在该溶液中，之后利用去离子水清洗吹干。刻蚀氮化硅时，将待加 工工件置于热磷酸溶液中，生成的刻蚀产物Si(OH) 4和NH 4H 2PO 4溶解在该溶液中，之后利用去离子水清洗吹干。通过改变氢氟酸溶液和热磷酸溶液的腐蚀时间，可以有效调节二氧化硅/氮化硅刻蚀选择比(n:1-1:n,n≥1)。 When the silicon dioxide is etched, the workpiece to be processed is placed in a hydrofluoric acid solution, and the resulting etching product SiF4 is dissolved in the solution, and then washed with deionized water and blow-dried. When silicon nitride is etched, the workpiece to be processed is placed in a hot phosphoric acid solution, and the resulting etching products Si (OH) 4 and NH 4 H 2 PO 4 are dissolved in the solution, and then rinsed and dried with deionized water. By changing the etching time of the hydrofluoric acid solution and the hot phosphoric acid solution, the silicon dioxide / silicon nitride etching selection ratio (n: 1-1: n, n≥1) can be effectively adjusted.
这种技术方案中的两种刻蚀工艺均具有较高的选择比，如氢氟酸溶液刻蚀二氧化硅时，对氮化硅的刻蚀选择比能够达到10:1，而热磷酸溶液刻蚀氮化硅时，对二氧化硅的刻蚀选择比能够达到150：1。因此可以实现分别对二氧化硅和氮化硅膜的刻蚀，并且，通过改变这两种刻蚀工艺的刻蚀时间，可以有效调节氮化硅和二氧化硅的刻蚀量。The two etching processes in this technical solution have a high selection ratio. For example, when silicon dioxide is etched by a hydrofluoric acid solution, the etching selection ratio of silicon nitride can reach 10: 1. When silicon nitride is etched, the etching selection ratio for silicon dioxide can reach 150: 1. Therefore, the silicon dioxide and silicon nitride films can be etched separately, and the etching amount of silicon nitride and silicon dioxide can be effectively adjusted by changing the etching time of these two etching processes.
在实现本公开的过程中，申请人发现现有技术存在以下缺陷：In the process of implementing this disclosure, the applicant found that the prior art has the following defects:
湿法刻蚀需要使用两种设备，工艺步骤比较复杂，产能较低。此外，由于存在表面张力的作用，湿法刻蚀过程中，待加工工件表面的微细结构容易产生粘连，见图1。Wet etching requires two types of equipment, the process steps are more complicated, and the productivity is lower. In addition, due to the effect of surface tension, the fine structure of the surface of the workpiece to be processed is prone to adhesion during wet etching, as shown in Figure 1.
发明内容Summary of the Invention
为了解决现有技术中存在的上述问题，本公开提出了一种非等离子刻蚀方法，其可以大范围有效调节二氧化硅/氮化硅刻蚀选择比，从而不仅可以满足不同应用的要求，降低工艺复杂性和设备成本，而且可以避免产生等离子体损伤和微细结构粘连。In order to solve the above-mentioned problems in the prior art, the present disclosure proposes a non-plasma etching method, which can effectively adjust the silicon dioxide / silicon nitride etching selection ratio in a wide range, thereby not only meeting the requirements of different applications, Reduce process complexity and equipment cost, and can avoid plasma damage and fine structure adhesion.
为达到上述目的，本公开提出了一种非等离子刻蚀方法，包括以下步骤：S1，向反应腔室内通入包含刻蚀气体和催化气体的气体混合物，以对二氧化硅和氮化硅进行刻蚀；In order to achieve the above object, the present disclosure proposes a non-plasma etching method, including the following steps: S1, passing a gas mixture containing an etching gas and a catalytic gas into a reaction chamber to perform silicon dioxide and silicon nitride Etching
其中，所述刻蚀气体用于刻蚀二氧化硅和氮化硅；所述催化气体用于提高刻蚀速率；所述气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定。The etching gas is used to etch silicon dioxide and silicon nitride; the catalytic gas is used to increase the etching rate; the flow ratio of each gas component in the gas mixture is based on the required silicon dioxide / nitrogen Silicone etching selectivity is determined.
在本公开的一些实施例中，所述刻蚀气体包括氟化氢；所述催化气体包 括用于促进所述氟化氢与二氧化硅反应的第一催化气体，及用于促进所述氟化氢与氮化硅反应的第二催化气体；其中，所述第一催化气体包括羟基化合物；所述第二催化气体包括含氟气体。In some embodiments of the present disclosure, the etching gas includes hydrogen fluoride; the catalytic gas includes a first catalytic gas for promoting a reaction between the hydrogen fluoride and silicon dioxide, and for promoting the hydrogen fluoride and silicon nitride A second catalytic gas for the reaction; wherein the first catalytic gas includes a hydroxy compound; and the second catalytic gas includes a fluorine-containing gas.
在本公开的一些实施例中，在所述步骤S1中，同时向所述反应腔室通入所述氟化氢、羟基化合物和含氟气体，以同时对二氧化硅和氮化硅进行刻蚀。In some embodiments of the present disclosure, in the step S1, the hydrogen fluoride, the hydroxyl compound, and the fluorine-containing gas are simultaneously introduced into the reaction chamber to simultaneously etch silicon dioxide and silicon nitride.
在本公开的一些实施例中，所述步骤S1进一步包括以下子步骤：In some embodiments of the present disclosure, the step S1 further includes the following sub-steps:
S11，向所述反应腔室通入所述氟化氢和含氟气体，以对二氧化硅进行刻蚀；S11, passing the hydrogen fluoride and fluorine-containing gas into the reaction chamber to etch silicon dioxide;
S12，向所述反应腔室通入所述氟化氢和羟基化合物，以对氮化硅进行刻蚀。S12. Pass the hydrogen fluoride and the hydroxyl compound into the reaction chamber to etch silicon nitride.
在本公开的一些实施例中，所述步骤S1进一步包括以下子步骤：In some embodiments of the present disclosure, the step S1 further includes the following sub-steps:
S11，向所述反应腔室通入所述氟化氢和羟基化合物，以对氮化硅进行刻蚀；S11, introducing the hydrogen fluoride and the hydroxyl compound into the reaction chamber to etch silicon nitride;
S12，向所述反应腔室通入所述氟化氢和含氟气体，以对二氧化硅进行刻蚀。S12. The hydrogen fluoride and the fluorine-containing gas are passed into the reaction chamber to etch silicon dioxide.
在本公开的一些实施例中，在所述步骤S1之后，还包括以下步骤：In some embodiments of the present disclosure, after step S1, the following steps are further included:
S2，判断所述步骤S1的刻蚀厚度是否达到预定范围，若否，则返回所述步骤S1；若是，则流程结束。S2. Determine whether the etching thickness in step S1 has reached a predetermined range, and if not, return to step S1; if yes, the process ends.
在本公开的一些实施例中，在所述步骤S11与所述步骤S12之间，还包括以下步骤：In some embodiments of the present disclosure, between the step S11 and the step S12, the following steps are further included:
S21，判断所述步骤S11的刻蚀厚度是否达到预定范围，若否，则返回所述步骤S11；若是，则进行所述步骤S12；S21: Determine whether the etching thickness in step S11 has reached a predetermined range; if not, return to step S11; if yes, proceed to step S12;
在所述步骤S12之后，还包括以下步骤：After the step S12, the following steps are further included:
S22，判断所述步骤S12的刻蚀厚度是否达到预定范围，若否，则返回 所述步骤S12；若是，则流程结束。S22. It is determined whether the etching thickness in step S12 has reached a predetermined range, and if not, the process returns to step S12; if it is, the process ends.
在本公开的一些实施例中，在所述步骤S11与所述步骤S12之间，还包括以下步骤：In some embodiments of the present disclosure, between the step S11 and the step S12, the following steps are further included:
S3，向所述反应腔室中通入吹扫气体，以去除所述反应腔室中的残气。S3. A purge gas is passed into the reaction chamber to remove the residual gas in the reaction chamber.
在本公开的一些实施例中，通过一次或多次对二氧化硅和氮化硅的刻蚀，以使所述二氧化硅和氮化硅的刻蚀厚度达到最终要求。In some embodiments of the present disclosure, the silicon dioxide and silicon nitride are etched one or more times so that the etching thickness of the silicon dioxide and silicon nitride reaches the final requirement.
在本公开的一些实施例中，交替进行所述步骤S11和所述步骤S12至少两次，以使所述二氧化硅和氮化硅的刻蚀厚度达到最终要求。In some embodiments of the present disclosure, the step S11 and the step S12 are alternately performed at least twice, so that the etching thickness of the silicon dioxide and silicon nitride reaches a final requirement.
在本公开的一些实施例中，所述步骤S11和所述步骤S12在同一反应腔室或不同反应腔室中进行。In some embodiments of the present disclosure, the step S11 and the step S12 are performed in the same reaction chamber or different reaction chambers.
在本公开的一些实施例中，所述含氟气体包括F 2、XeF 2、ClF 3中的一种或多种。 In some embodiments of the present disclosure, the fluorine-containing gas includes one or more of F 2 , XeF 2 , and ClF 3 .
在本公开的一些实施例中，所述羟基化合物包括醇类化合物或酚类化合物。In some embodiments of the present disclosure, the hydroxy compound includes an alcohol compound or a phenol compound.
在本公开的一些实施例中，所述含氟气体的流量是所述氟化氢的流量的0.5倍。In some embodiments of the present disclosure, the flow rate of the fluorine-containing gas is 0.5 times the flow rate of the hydrogen fluoride.
在本公开的一些实施例中，所述羟基化合物的流量是所述氟化氢的流量的1-2倍。In some embodiments of the present disclosure, the flow rate of the hydroxy compound is 1-2 times the flow rate of the hydrogen fluoride.
在本公开的一些实施例中，所述含氟气体与所述羟基化合物的流量比例的取值范围为10：1-1：10。In some embodiments of the present disclosure, the flow rate ratio of the fluorine-containing gas to the hydroxyl compound ranges from 10: 1 to 1:10.
在本公开的一些实施例中，所述含氟气体的流量小于或者等于400sccm。In some embodiments of the present disclosure, the flow rate of the fluorine-containing gas is less than or equal to 400 sccm.
在本公开的一些实施例中，所述羟基化合物的流量小于或者等于1000sccm。In some embodiments of the present disclosure, the flow rate of the hydroxy compound is less than or equal to 1000 sccm.
在本公开的一些实施例中，所述氟化氢的流量的取值范围为50-1000 sccm。In some embodiments of the present disclosure, the flow rate of the hydrogen fluoride ranges from 50 to 1000 sccm.
在本公开的一些实施例中，所述反应腔室的压力小于或者等于300Torr；所述反应腔室的温度为15-105℃。In some embodiments of the present disclosure, the pressure of the reaction chamber is less than or equal to 300 Torr; the temperature of the reaction chamber is 15-105 ° C.
本公开提供的非等离子刻蚀方法，其通过向反应腔室内通入包含刻蚀气体和催化气体的气体混合物，可以采用非等离子的方式实现对二氧化硅和氮化硅的刻蚀，从而可以避免产生等离子体损伤和微细结构粘连。同时，上述气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定，从而可以大范围有效调节二氧化硅/氮化硅刻蚀选择比，进而可以满足不同应用的要求，降低工艺复杂性和设备成本。The non-plasma etching method provided by the present disclosure can pass through a gas mixture containing an etching gas and a catalytic gas into the reaction chamber, and can realize the etching of silicon dioxide and silicon nitride in a non-plasma manner, so that Avoid plasma damage and adhesion of fine structures. At the same time, the flow ratio of each gas component in the above-mentioned gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio, so that the silicon dioxide / silicon nitride etching selection ratio can be effectively adjusted in a wide range, and further, Meet the requirements of different applications and reduce process complexity and equipment costs.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为现有技术中湿法工艺后微细结构粘连示意图；FIG. 1 is a schematic diagram of microstructure adhesion after a wet process in the prior art; FIG.
图2为本公开第一实施例提供的非等离子干法刻蚀方法的流程图；2 is a flowchart of a non-plasma dry etching method provided by a first embodiment of the present disclosure;
图3为本公开第二实施例提供的非等离子干法刻蚀方法的流程图；3 is a flowchart of a non-plasma dry etching method provided by a second embodiment of the present disclosure;
图4为本公开第三实施例提供的非等离子干法刻蚀方法的流程图；4 is a flowchart of a non-plasma dry etching method provided by a third embodiment of the present disclosure;
图5为本公开第四实施例提供的非等离子干法刻蚀方法的流程图；5 is a flowchart of a non-plasma dry etching method according to a fourth embodiment of the present disclosure;
图6为本公开第五实施例提供的非等离子干法刻蚀方法的流程图。FIG. 6 is a flowchart of a non-plasma dry etching method according to a fifth embodiment of the present disclosure.
具体实施方式Detailed ways
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开作进一步的详细说明。In order to make the objectives, technical solutions, and advantages of the present disclosure more clear, the present disclosure will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings.
请参阅图2，本公开第一实施例提供的非等离子干法刻蚀方法，其包括以下步骤：Referring to FIG. 2, a non-plasma dry etching method according to a first embodiment of the present disclosure includes the following steps:
S1，向反应腔室内通入包含刻蚀气体和催化气体的气体混合物，以对二氧化硅和氮化硅进行刻蚀。S1. A gas mixture containing an etching gas and a catalytic gas is passed into the reaction chamber to etch silicon dioxide and silicon nitride.
其中，刻蚀气体用于刻蚀二氧化硅和氮化硅；催化气体用于提高刻蚀速 率。气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定。Among them, the etching gas is used to etch silicon dioxide and silicon nitride; the catalytic gas is used to increase the etching rate. The flow ratio of each gas component in the gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio.
本公开提供的非等离子刻蚀方法，其通过向反应腔室内通入包含刻蚀气体和催化气体的气体混合物，可以采用非等离子的方式实现对二氧化硅和氮化硅的刻蚀，从而可以避免产生等离子体损伤和微细结构粘连。同时，上述气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定，从而可以大范围有效调节二氧化硅/氮化硅刻蚀选择比，进而可以满足不同应用的要求，降低工艺复杂性和设备成本。The non-plasma etching method provided by the present disclosure can pass through a gas mixture containing an etching gas and a catalytic gas into the reaction chamber, and can realize the etching of silicon dioxide and silicon nitride in a non-plasma manner, so that Avoid plasma damage and adhesion of fine structures. At the same time, the flow ratio of each gas component in the above-mentioned gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio, so that the silicon dioxide / silicon nitride etching selection ratio can be effectively adjusted in a wide range, and further, Meet the requirements of different applications and reduce process complexity and equipment costs.
可选的，刻蚀气体包括氟化氢(HF)。Optionally, the etching gas includes hydrogen fluoride (HF).
氟化氢可用于刻蚀二氧化硅，也可用于刻蚀氮化硅。但是，单独采用氟化氢进行刻蚀的速率较低，因此，本公开利用催化气体来提高刻蚀速率。Hydrogen fluoride can be used to etch silicon dioxide and silicon nitride. However, the rate of etching using hydrogen fluoride alone is low, so the present disclosure utilizes a catalytic gas to increase the rate of etching.
可选的，催化气体包括用于促进氟化氢与二氧化硅反应的第一催化气体，及用于促进氟化氢与氮化硅反应的第二催化气体；其中，第一催化气体包括羟基化合物。羟基化合物包括醇类化合物或酚类化合物，其中，醇类化合物包括甲醇、乙醇、丙醇、异丙醇、丁醇、异丁醇等中的一种或多种；酚类化合物包括苯酚、苯二酚、甲基苯酚等中的一种或多种。Optionally, the catalytic gas includes a first catalytic gas for promoting a reaction between hydrogen fluoride and silicon dioxide, and a second catalytic gas for promoting a reaction between hydrogen fluoride and silicon nitride; wherein the first catalytic gas includes a hydroxyl compound. Hydroxyl compounds include alcohol compounds or phenol compounds, wherein the alcohol compounds include one or more of methanol, ethanol, propanol, isopropanol, butanol, isobutanol, and the like; phenol compounds include phenol, benzene One or more of diphenol, methylphenol, and the like.
优选的，第一催化气体选用诸如甲醇等沸点较低的羟基化合物，其可以将反应产生的少量水带出，减少水在待加工工件表面的残留量，从而可以避免产生微细结构粘连。例如，氟化氢、甲醇和二氧化硅的反应原理如下：Preferably, the first catalytic gas is a hydroxy compound with a lower boiling point, such as methanol, which can take out a small amount of water generated by the reaction and reduce the residual amount of water on the surface of the workpiece to be processed, thereby avoiding the occurrence of fine structure adhesion. For example, the reaction principle of hydrogen fluoride, methanol and silica is as follows:
HF+CH 3OH→HF 2-+CH 3OH 2+   (3) HF + CH 3 OH → HF 2- + CH 3 OH 2 + (3)
HF 2-+CH 3OH 2++SiO 2→SiF 4+CH 3OH+H 2O (4) HF 2- + CH 3 OH 2 ++ SiO 2 → SiF 4 + CH 3 OH + H 2 O (4)
上述氟化氢和甲醇的气体混合物可以应用在要求SiO 2/SiN刻蚀选择比为n:1(n≥1)的工艺。 The above-mentioned gas mixture of hydrogen fluoride and methanol can be applied to a process requiring an SiO 2 / SiN etching selection ratio of n: 1 (n ≧ 1).
第二催化气体包括含氟气体。含氟气体包括F 2、XeF 2、ClF 3等中的一种或多种。含氟气体能够提高刻蚀速率，同时提高氮化硅对二氧化硅的刻蚀选 择比，避免产生微细结构粘连。例如，第二催化气体为F 2。氟化氢、F 2和氮化硅的反应原理如下： The second catalytic gas includes a fluorine-containing gas. The fluorine-containing gas includes one or more of F 2 , XeF 2 , ClF 3 and the like. The fluorine-containing gas can increase the etching rate, and at the same time increase the etching selectivity ratio of silicon nitride to silicon dioxide to avoid micro-structure adhesion. For example, the second catalytic gas is F 2 . The reaction principle of hydrogen fluoride, F 2 and silicon nitride is as follows:
SiN+HF+F 2→SiF 4+N 2   (5) SiN + HF + F 2 → SiF 4 + N 2 (5)
上述氟化氢和F2的气体混合物可以应用在要求SiO 2/SiN刻蚀选择比为1:n(n≥1)的工艺。 The above-mentioned gas mixture of hydrogen fluoride and F2 can be applied to a process requiring a SiO 2 / SiN etching selection ratio of 1: n (n ≧ 1).
本公开第二实施例提供的非等离子干法刻蚀方法，其是在上述第一实施例的基础上所作的进一步改进。具体地，在上述步骤S1中，同时向反应腔室通入氟化氢、羟基化合物和含氟气体，以同时对二氧化硅和氮化硅进行刻蚀。The non-plasma dry etching method provided in the second embodiment of the present disclosure is a further improvement based on the first embodiment described above. Specifically, in the above step S1, hydrogen fluoride, a hydroxy compound, and a fluorine-containing gas are simultaneously introduced into the reaction chamber to simultaneously etch silicon dioxide and silicon nitride.
通过在同一反应腔室同时对二氧化硅和氮化硅进行刻蚀，即仅需要一套工艺设备即可完成二氧化硅和氮化硅的刻蚀，不仅可以降低工艺复杂性和设备成本，而且可以提高产能。By simultaneously etching silicon dioxide and silicon nitride in the same reaction chamber, that is, only one set of process equipment is required to complete the etching of silicon dioxide and silicon nitride, which not only reduces process complexity and equipment costs, And can increase productivity.
请参阅图3，下面以刻蚀气体为氟化氢、第一催化气体为甲醇和第二催化气体为F 2为例对本公开第二实施例提供的非等离子刻蚀方法进行说明。具体地，该非等离子刻蚀方法包括以下步骤： Referring to FIG. 3, the non-plasma etching method provided in the second embodiment of the present disclosure will be described by taking the etching gas as hydrogen fluoride, the first catalytic gas as methanol, and the second catalytic gas as F 2 as examples. Specifically, the non-plasma etching method includes the following steps:
101、同时向反应腔室通入氟化氢、甲醇和F 2，以同时对二氧化硅和氮化硅进行刻蚀； 101. Simultaneously pass hydrogen fluoride, methanol, and F 2 into the reaction chamber to etch silicon dioxide and silicon nitride at the same time;
102、停止向反应腔室通入氟化氢、甲醇和F 2； 102. Stop introducing hydrogen fluoride, methanol, and F 2 into the reaction chamber.
103、判断步骤101的刻蚀厚度是否达到预定范围，若否，则返回步骤101；若是，则流程结束。103. Determine whether the etching thickness in step 101 reaches a predetermined range, and if not, return to step 101; if yes, the process ends.
在上述步骤101中，气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定。具体地，通过调节氟化氢、F 2和甲醇的流量比例可以大范围有效调节二氧化硅/氮化硅的刻蚀选择比(n:1-1:n，n≥1)，可以应用在要求刻蚀选择比的范围为n:1-1:n(SiO 2/SiN,n≥1)的工艺中，从而可以降低工艺复杂性和设备成本。 In the above step 101, the flow ratio of each gas component in the gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio. Specifically, by adjusting the flow ratio of hydrogen fluoride, F 2 and methanol, the etching selection ratio (n: 1-1: n, n≥1) of silicon dioxide / silicon nitride can be effectively adjusted in a wide range, and can be applied to the required etching. In a process with an etching selection ratio ranging from n: 1-1: n (SiO 2 / SiN, n≥1), the process complexity and equipment cost can be reduced.
在实际应用中，还可以利用苯酚代替上述甲醇，其同样可有效避免产生微细结构粘连，并且通过调节氟化氢、F 2和苯酚的流量比例可以大范围有效调节二氧化硅/氮化硅的刻蚀选择比(n:1-1:n，n≥1)。 In practical applications, phenol can also be used instead of the above-mentioned methanol, which can also effectively prevent the occurrence of fine structure adhesion, and can effectively adjust the etching of silicon dioxide / silicon nitride in a wide range by adjusting the flow ratio of hydrogen fluoride, F 2 and phenol Selection ratio (n: 1-1: n, n≥1).
可选的，含氟气体的流量是氟化氢的流量的0.5倍。优选的，含氟气体的流量小于或者等于400sccm，进一步优选为20-200sccm。Optionally, the flow rate of the fluorine-containing gas is 0.5 times the flow rate of the hydrogen fluoride. Preferably, the flow rate of the fluorine-containing gas is less than or equal to 400 sccm, and more preferably 20-200 sccm.
可选的，羟基化合物的流量是氟化氢的流量的1-2倍。优选的，羟基化合物的流量小于或者等于1000sccm，进一步优选为小于或者等于400sccmm。Optionally, the flow rate of the hydroxy compound is 1-2 times that of the hydrogen fluoride. Preferably, the flow rate of the hydroxy compound is 1,000 sccm or less, and more preferably 400 sccmm or less.
可选的，氟化氢的流量的取值范围为50-1000sccm，进一步优选为20-400sccm。Optionally, the value range of the flow rate of hydrogen fluoride is 50-1000 sccm, and more preferably 20-400 sccm.
可选的，含氟气体与羟基化合物的流量比例的取值范围为10：1-1：10，优选为2：1-1：4。Optionally, the value of the flow ratio of the fluorine-containing gas to the hydroxyl compound ranges from 10: 1-1: 10, and preferably 2: 1-1: 4.
可选的，在上述步骤101中，工艺压力为0-300Torr，优选为20-150Torr；工艺温度为15-105℃，优选为60-80℃。Optionally, in the above step 101, the process pressure is 0-300 Torr, preferably 20-150 Torr; the process temperature is 15-105 ° C, preferably 60-80 ° C.
在本实施例中，连续以预定流量比例通入氟化氢、羟基化合物和含氟气体，直到二氧化硅和氮化硅的刻蚀厚度均达到最终要求。也就是说，一次性刻蚀达到二氧化硅和氮化硅的目标刻蚀厚度。In this embodiment, hydrogen fluoride, a hydroxy compound, and a fluorine-containing gas are continuously introduced at a predetermined flow ratio until the etching thicknesses of silicon dioxide and silicon nitride reach the final requirements. That is, the target etch thicknesses of silicon dioxide and silicon nitride are achieved in one shot.
本公开第三实施例提供的非等离子刻蚀方法，其与上述第二实施例相比，不同之处在于：将对二氧化硅和氮化硅的刻蚀分多次子步骤进行，每次子步骤均以预定流量比例通入氟化氢、羟基化合物和含氟气体一段时间，以使二氧化硅和氮化硅均达到预定刻蚀厚度。在完成多次子步骤之后，二氧化硅和氮化硅的刻蚀厚度均达到最终要求。The non-plasma etching method provided by the third embodiment of the present disclosure is different from the above-mentioned second embodiment in that the etching of silicon dioxide and silicon nitride is performed in multiple sub-steps, each time In the sub-steps, hydrogen fluoride, a hydroxy compound, and a fluorine-containing gas are passed in at a predetermined flow ratio for a period of time, so that both the silicon dioxide and the silicon nitride reach a predetermined etching thickness. After completing several sub-steps, the etched thickness of silicon dioxide and silicon nitride meets the final requirements.
多次子步骤采用的氟化氢、羟基化合物和含氟气体的流量比例可以相同，或者也可以不同。The flow ratios of the hydrogen fluoride, the hydroxyl compound, and the fluorine-containing gas used in the multiple sub-steps may be the same or different.
请参阅图4，下面以刻蚀气体为氟化氢、第一催化气体为甲醇和第二催 化气体为F 2为例对本公开第三实施例提供的非等离子刻蚀方法进行说明。具体地，该非等离子刻蚀方法将对二氧化硅和氮化硅的刻蚀分多次子步骤进行，分别为第一次子步骤、第二次子步骤、…。 Referring to FIG. 4, the non-plasma etching method provided by the third embodiment of the present disclosure will be described below using the etching gas as hydrogen fluoride, the first catalytic gas as methanol, and the second catalytic gas as F 2 as examples. Specifically, the non-plasma etching method performs the etching of silicon dioxide and silicon nitride in multiple sub-steps, which are a first sub-step, a second sub-step, and so on.
其中，第一次子步骤包括以下步骤：The first sub-step includes the following steps:
201、同时向反应腔室通入氟化氢、甲醇和F 2，以同时对二氧化硅和氮化硅进行刻蚀； 201. Simultaneously pass hydrogen fluoride, methanol, and F 2 into the reaction chamber to etch silicon dioxide and silicon nitride at the same time;
202、停止向反应腔室通入氟化氢、甲醇和F 2； 202. Stop introducing hydrogen fluoride, methanol, and F 2 into the reaction chamber;
203、判断步骤201的刻蚀厚度是否达到第一刻蚀厚度，若否，则返回步骤201；若是，则进行第二次子步骤。203: Determine whether the etching thickness in step 201 has reached the first etching thickness, and if not, return to step 201; if yes, perform the second sub-step.
第二次子步骤包括以下步骤：The second substep includes the following steps:
301、同时向反应腔室通入氟化氢、甲醇和F 2，以同时对二氧化硅和氮化硅进行刻蚀； 301. Simultaneously pass hydrogen fluoride, methanol, and F 2 into the reaction chamber to simultaneously etch silicon dioxide and silicon nitride;
302、停止向反应腔室通入氟化氢、甲醇和F 2； 302. Stop introducing hydrogen fluoride, methanol and F 2 into the reaction chamber;
303、判断步骤301的刻蚀厚度是否达到第二刻蚀厚度，若否，则返回步骤301；若是，则进行第三次子步骤。303: Determine whether the etching thickness in step 301 has reached the second etching thickness, and if not, return to step 301; if yes, perform the third sub-step.
如此进行，在完成多次子步骤之后，判断二氧化硅和氮化硅的刻蚀厚度是否均达到最终要求，若是，则流程结束。In this way, after completing several sub-steps, it is determined whether the etching thicknesses of silicon dioxide and silicon nitride have reached the final requirements, and if so, the process ends.
本公开第四实施例提供的非等离子刻蚀方法，其与上述第二实施例相比，不同之处在于：先对二氧化硅进行刻蚀，后对氮化硅进行刻蚀。或者，先对氮化硅进行刻蚀，后对二氧化硅进行刻蚀。The non-plasma etching method provided by the fourth embodiment of the present disclosure is different from the above-mentioned second embodiment in that the silicon dioxide is etched first, and then the silicon nitride is etched. Alternatively, the silicon nitride is etched first, and then the silicon dioxide is etched.
具体地，步骤S1进一步包括以下子步骤：Specifically, step S1 further includes the following sub-steps:
S11，向反应腔室通入氟化氢和含氟气体，以对二氧化硅进行刻蚀；S11. Pass hydrogen fluoride and a fluorine-containing gas into the reaction chamber to etch the silicon dioxide;
S12，向反应腔室通入氟化氢和羟基化合物，以对氮化硅进行刻蚀。S12, hydrogen fluoride and a hydroxy compound are introduced into the reaction chamber to etch silicon nitride.
或者，步骤S1进一步包括以下子步骤：Alternatively, step S1 further includes the following sub-steps:
S11，向反应腔室通入氟化氢和羟基化合物，以对氮化硅进行刻蚀；S11. Pass hydrogen fluoride and a hydroxy compound into the reaction chamber to etch silicon nitride;
S12，向反应腔室通入氟化氢和含氟气体，以对二氧化硅进行刻蚀。In step S12, hydrogen fluoride and a fluorine-containing gas are introduced into the reaction chamber to etch the silicon dioxide.
可选的，在上述步骤S11与步骤S12之间，还包括以下步骤：Optionally, between the above steps S11 and S12, the following steps are further included:
S3，向反应腔室中通入吹扫气体，以去除反应腔室中的残气。S3, purge gas is introduced into the reaction chamber to remove the residual gas in the reaction chamber.
由此，可以保证步骤S12不会受到步骤S11中的残气的影响。Therefore, it can be ensured that step S12 is not affected by the residual gas in step S11.
可选的，吹扫气体包括惰性气体。Optionally, the purge gas includes an inert gas.
请参阅图5，下面以先对氮化硅进行刻蚀，后对二氧化硅进行刻蚀，以及刻蚀气体为氟化氢、第一催化气体为甲醇和第二催化气体为F 2为例对本公开第四实施例提供的非等离子刻蚀方法进行说明。具体地，该非等离子刻蚀方法包括以下步骤： Please refer to FIG. 5. The following is an example of the present disclosure by etching silicon nitride first, then silicon dioxide, and using an etching gas of hydrogen fluoride, a first catalytic gas of methanol and a second catalytic gas of F 2 The non-plasma etching method provided in the fourth embodiment is described. Specifically, the non-plasma etching method includes the following steps:
401、向反应腔室通入氟化氢和甲醇，以对氮化硅进行刻蚀；401: Pass hydrogen fluoride and methanol into the reaction chamber to etch silicon nitride;
402、停止向反应腔室通入氟化氢和甲醇；402. Stop introducing hydrogen fluoride and methanol into the reaction chamber.
403、判断步骤401的刻蚀厚度是否达到预定范围，若否，则返回步骤401；若是，则进行步骤404；403. Determine whether the etching thickness of step 401 reaches a predetermined range, and if not, return to step 401; if yes, proceed to step 404;
404、向反应腔室中通入吹扫气体，以去除反应腔室中的残气；404. Pass a purge gas into the reaction chamber to remove the residual gas in the reaction chamber;
405、向反应腔室通入氟化氢和F 2，以对二氧化硅进行刻蚀； 405. Pass hydrogen fluoride and F 2 into the reaction chamber to etch the silicon dioxide;
406、停止向反应腔室通入氟化氢和F 2； 406. Stop introducing hydrogen fluoride and F 2 into the reaction chamber.
407、判断步骤405的刻蚀厚度是否达到预定范围，若否，则返回步骤405；若是，则流程结束。407: Determine whether the etching thickness in step 405 reaches a predetermined range; if not, return to step 405; if yes, the process ends.
在本实施例中，连续以预定流量比例通入氟化氢和羟基化合物，直到氮化硅的刻蚀厚度达到最终要求，也就是说，一次性刻蚀达到氮化硅的目标刻蚀厚度。同样的，连续以预定流量比例通入氟化氢和含氟气体，直到二氧化硅的刻蚀厚度达到最终要求，也就是说，一次性刻蚀达到二氧化硅的目标刻蚀厚度。In this embodiment, hydrogen fluoride and a hydroxy compound are continuously fed in at a predetermined flow ratio until the etching thickness of the silicon nitride reaches the final requirement, that is, the one-time etching reaches the target etching thickness of the silicon nitride. Similarly, hydrogen fluoride and fluorine-containing gas are continuously introduced at a predetermined flow ratio until the etching thickness of the silicon dioxide reaches the final requirement, that is, the one-time etching reaches the target etching thickness of the silicon dioxide.
本公开第五实施例提供的非等离子刻蚀方法，其与上述第四实施例相比，不同之处在于：将对二氧化硅的刻蚀分多次子步骤进行，以及将对氮化 硅的刻蚀分多次子步骤进行。并且，刻蚀二氧化硅的多次子步骤与刻蚀氮化硅的多次子步骤交替进行，直至二氧化硅和氮化硅的刻蚀厚度达到最终要求。The non-plasma etching method provided by the fifth embodiment of the present disclosure is different from the fourth embodiment described above in that the etching of silicon dioxide is divided into multiple sub-steps, and the silicon nitride is The etching is performed in multiple sub-steps. In addition, multiple sub-steps of etching silicon dioxide and multiple sub-steps of etching silicon nitride are alternately performed until the etching thickness of silicon dioxide and silicon nitride reaches the final requirement.
请参阅图6，下面以先对氮化硅进行刻蚀，后对二氧化硅进行刻蚀，刻蚀气体为氟化氢、第一催化气体为甲醇和第二催化气体为F 2为例对本公开第五实施例提供的非等离子刻蚀方法进行说明。具体地，该非等离子刻蚀方法包括以下步骤： Referring to FIG. 6, the following is an example in which silicon nitride is etched first, and then silicon dioxide is etched. The etching gas is hydrogen fluoride, the first catalytic gas is methanol, and the second catalytic gas is F 2 . The non-plasma etching method provided in the fifth embodiment is described. Specifically, the non-plasma etching method includes the following steps:
501、向反应腔室通入氟化氢和甲醇，以对氮化硅进行刻蚀；501: Pass hydrogen fluoride and methanol into the reaction chamber to etch silicon nitride;
502、停止向反应腔室通入氟化氢和甲醇；502. Stop introducing hydrogen fluoride and methanol into the reaction chamber.
503、判断步骤501的刻蚀厚度是否达到第一刻蚀厚度，若否，则返回步骤501；若是，则进行步骤504；503: Determine whether the etching thickness in step 501 reaches the first etching thickness, and if not, return to step 501; if yes, proceed to step 504;
504、向反应腔室中通入吹扫气体，以去除反应腔室中的残气；504. Pass a purge gas into the reaction chamber to remove the residual gas in the reaction chamber;
505、向反应腔室通入氟化氢和F 2，以对二氧化硅进行刻蚀； 505. Pass hydrogen fluoride and F 2 into the reaction chamber to etch the silicon dioxide;
506、停止向反应腔室通入氟化氢和F 2； 506. Stop introducing hydrogen fluoride and F 2 into the reaction chamber.
507、判断步骤505的刻蚀厚度是否达到第二刻蚀厚度，若否，则返回步骤505；若是，则进行步骤508；507: Determine whether the etching thickness in step 505 has reached the second etching thickness, and if not, return to step 505; if yes, proceed to step 508;
508、判断二氧化硅和氮化硅的刻蚀厚度是否均达到最终要求，若否，则返回步骤501；若是，则流程结束。508: Determine whether the etching thicknesses of silicon dioxide and silicon nitride have reached the final requirements; if not, return to step 501; if yes, the process ends.
本实施例提供的非等离子刻蚀方法具有较好的灵活性，而且，氮化硅和二氧化硅的刻蚀可以在同一反应腔室中进行，即仅需要一套工艺设备即可完成二氧化硅和氮化硅的刻蚀，不仅可以降低工艺复杂性和设备成本，而且可以提高产能。当然也可以在一个反应腔室中刻蚀氮化硅，然后将待加工工件放置在另一个反应腔室中刻蚀二氧化硅。The non-plasma etching method provided in this embodiment has better flexibility, and the etching of silicon nitride and silicon dioxide can be performed in the same reaction chamber, that is, only one set of process equipment is needed to complete the dioxide Etching of silicon and silicon nitride can not only reduce process complexity and equipment costs, but also increase productivity. Of course, it is also possible to etch silicon nitride in one reaction chamber, and then place the workpiece to be processed in another reaction chamber to etch silicon dioxide.
另外，在进行二氧化硅的刻蚀时，由于只通入氟化氢和含氟气体，而没有通入羟基化合物，此时对氮化硅的刻蚀速率较慢，从而可以明显提高二氧化硅对氮化硅的刻蚀选择比；反之，在只通入氟化氢和羟基化合物时，可以 明显提高氮化硅对二氧化硅的刻蚀选择比。In addition, during the etching of silicon dioxide, since only hydrogen fluoride and fluorine-containing gas are passed in, but no hydroxyl compound is passed in, the etching rate of silicon nitride is slower at this time, so that the silicon dioxide can be significantly improved. The etching selection ratio of silicon nitride; conversely, when only hydrogen fluoride and hydroxyl compounds are passed in, the etching selection ratio of silicon nitride to silicon dioxide can be significantly improved.
需要说明的是，本公开第三至第五实施例提供的非等离子干法刻蚀方法的其他技术方案与本公开第二实施例提供的非等离子干法刻蚀方法相同，在此不再重复描述。It should be noted that other technical solutions of the non-plasma dry etching methods provided by the third to fifth embodiments of the present disclosure are the same as the non-plasma dry etching methods provided by the second embodiment of the present disclosure, and will not be repeated here. description.
综上所述，本公开上述各个实施例提供的非等离子刻蚀方法，其通过向反应腔室内通入包含刻蚀气体和催化气体的气体混合物，可以采用非等离子的方式实现对二氧化硅和氮化硅的刻蚀，从而可以避免产生等离子体损伤和微细结构粘连。同时，上述气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定，从而可以大范围有效调节二氧化硅/氮化硅刻蚀选择比，进而可以满足不同应用的要求，降低工艺复杂性和设备成本。In summary, the non-plasma etching methods provided by the above embodiments of the present disclosure can pass non-plasma to the silicon dioxide and silicon oxide by introducing a gas mixture containing an etching gas and a catalytic gas into the reaction chamber. Etching of silicon nitride can avoid plasma damage and fine structure adhesion. At the same time, the flow ratio of each gas component in the above-mentioned gas mixture is determined according to the required silicon dioxide / silicon nitride etching selection ratio, so that the silicon dioxide / silicon nitride etching selection ratio can be effectively adjusted in a wide range, and further, Meet the requirements of different applications and reduce process complexity and equipment costs.
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。The specific embodiments described above further describe the objectives, technical solutions, and beneficial effects of the present disclosure. It should be understood that the above are only specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this disclosure shall be included in the protection scope of this disclosure.
还需要说明的是，实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本公开的保护范围。贯穿附图，相同的元素由相同或相近的附图标记来表示。在可能导致对本公开的理解造成混淆时，将省略常规结构或构造。It should also be noted that the directional terms mentioned in the embodiments, such as "up", "down", "front", "rear", "left", "right", etc., are only directions referring to the drawings, and are not Used to limit the scope of protection of this disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Where it may cause confusion in the understanding of the present disclosure, conventional structures or constructions will be omitted.
除非有所知名为相反之意，本说明书及所附权利要求中的数值参数是近似值，能够根据通过本公开的内容所得的所需特性改变。具体而言，所有使用于说明书及权利要求中表示组成的含量、反应条件等等的数字，应理解为在所有情况中是受到「约」的用语所修饰。一般情况下，其表达的含义是指包含由特定数量在一些实施例中±10％的变化、在一些实施例中±5％的变化、在一些实施例中±1％的变化、在一些实施例中±0.5％的变化。Unless otherwise known, the numerical parameters in this specification and the appended claims are approximate and can be changed according to the required characteristics obtained from the content of this disclosure. Specifically, all numbers used in the specification and claims to indicate the content of the composition, reaction conditions, etc. should be understood to be modified in all cases by the term "about". In general, the meaning of its expression is to include a specific amount of ± 10% change in some embodiments, ± 5% change in some embodiments, ± 1% change in some embodiments, and in some implementations ± 0.5% change in the examples.
再者，单词“包含”不排除存在未列在权利要求中的元件或步骤。位于元件之前的单词“一”或“一个”不排除存在多个这样的元件。Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
说明书与权利要求中所使用的序数例如“第一”、“第二”、“第三”等的用词，以修饰相应的元件，其本身并不意含及代表该元件有任何的序数，也不代表某一元件与另一元件的顺序、或是制造方法上的顺序，该些序数的使用仅用来使具有某命名的一元件得以和另一具有相同命名的元件能做出清楚区分。Ordinal numbers such as "first", "second", "third" and the like used in the description and claims to modify corresponding elements do not in themselves imply and represent that the elements have any ordinal number, also It does not represent the order of an element and another element, or the order of manufacturing methods. The use of these ordinal numbers is only used to clearly distinguish one element with a certain name from another element with the same name.
类似地，应当理解，为了精简本公开并帮助理解各个公开方面中的一个或多个，在上面对本公开的示例性实施例的描述中，本公开的各个特征有时被一起分组到单个实施例、图、或者对其的描述中。然而，并不应将该公开的方法解释成反映如下意图：即所要求保护的本公开要求比在每个权利要求中所明确记载的特征更多的特征。更确切地说，如下面的权利要求书所反映的那样，公开方面在于少于前面公开的单个实施例的所有特征。因此，遵循具体实施方式的权利要求书由此明确地并入该具体实施方式，其中每个权利要求本身都作为本公开的单独实施例。Similarly, it should be understood that, in order to streamline the present disclosure and help understand one or more of the various disclosed aspects, in the above description of exemplary embodiments of the present disclosure, various features of the present disclosure are sometimes grouped together into a single embodiment, Figure, or description of it. However, this disclosed method should not be construed to reflect the intention that the claimed present disclosure claims more features than are expressly recited in each claim. Rather, as reflected in the following claims, the disclosure aspect is less than all features of the single embodiment disclosed previously. Thus, claims following a specific embodiment are hereby explicitly incorporated into that specific embodiment, with each claim standing on its own as a separate embodiment of the present disclosure.

Claims (20)

  1. 一种非等离子刻蚀方法，其特征在于，包括以下步骤：A non-plasma etching method includes the following steps:
    S1，向反应腔室内通入包含刻蚀气体和催化气体的气体混合物，以对二氧化硅和氮化硅进行刻蚀；S1. Pass a gas mixture containing an etching gas and a catalytic gas into the reaction chamber to etch silicon dioxide and silicon nitride;
    其中，所述刻蚀气体用于刻蚀二氧化硅和氮化硅；所述催化气体用于提高刻蚀速率；所述气体混合物中各气体成分的流量比例根据所需的二氧化硅/氮化硅刻蚀选择比来确定。The etching gas is used to etch silicon dioxide and silicon nitride; the catalytic gas is used to increase the etching rate; the flow ratio of each gas component in the gas mixture is based on the required silicon dioxide / nitrogen Silicone etching selectivity is determined.
  2. 如权利要求1所述的非等离子刻蚀方法，其特征在于，所述刻蚀气体包括氟化氢；The non-plasma etching method according to claim 1, wherein the etching gas comprises hydrogen fluoride;
    所述催化气体包括用于促进所述氟化氢与二氧化硅反应的第一催化气体，及用于促进所述氟化氢与氮化硅反应的第二催化气体；其中，所述第一催化气体包括羟基化合物；所述第二催化气体包括含氟气体。The catalytic gas includes a first catalytic gas for promoting a reaction between the hydrogen fluoride and silicon dioxide, and a second catalytic gas for promoting a reaction between the hydrogen fluoride and silicon nitride; wherein the first catalytic gas includes a hydroxyl group A compound; the second catalytic gas includes a fluorine-containing gas.
  3. 如权利要求2所述的非等离子刻蚀方法，其特征在于，在所述步骤S1中，同时向所述反应腔室通入所述氟化氢、羟基化合物和含氟气体，以同时对二氧化硅和氮化硅进行刻蚀。The non-plasma etching method according to claim 2, wherein in the step S1, the hydrogen fluoride, the hydroxyl compound, and the fluorine-containing gas are simultaneously introduced into the reaction chamber, so that the silicon dioxide is simultaneously introduced into the reaction chamber. And silicon nitride.
  4. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述步骤S1进一步包括以下子步骤：The non-plasma etching method according to claim 2, wherein the step S1 further comprises the following sub-steps:
    S11，向所述反应腔室通入所述氟化氢和含氟气体，以对二氧化硅进行刻蚀；S11, passing the hydrogen fluoride and fluorine-containing gas into the reaction chamber to etch silicon dioxide;
    S12，向所述反应腔室通入所述氟化氢和羟基化合物，以对氮化硅进行刻蚀。S12. Pass the hydrogen fluoride and the hydroxyl compound into the reaction chamber to etch silicon nitride.
  5. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述步骤S1 进一步包括以下子步骤：The non-plasma etching method according to claim 2, wherein the step S1 further comprises the following sub-steps:
    S11，向所述反应腔室通入所述氟化氢和羟基化合物，以对氮化硅进行刻蚀；S11, introducing the hydrogen fluoride and the hydroxyl compound into the reaction chamber to etch silicon nitride;
    S12，向所述反应腔室通入所述氟化氢和含氟气体，以对二氧化硅进行刻蚀。S12. The hydrogen fluoride and the fluorine-containing gas are passed into the reaction chamber to etch silicon dioxide.
  6. 如权利要求3所述的非等离子刻蚀方法，其特征在于，在所述步骤S1之后，还包括以下步骤：The non-plasma etching method according to claim 3, further comprising the following steps after step S1:
    S2，判断所述步骤S1的刻蚀厚度是否达到预定范围，若否，则返回所述步骤S1；若是，则流程结束。S2. Determine whether the etching thickness in step S1 has reached a predetermined range, and if not, return to step S1; if yes, the process ends.
  7. 如权利要求4或5所述的非等离子刻蚀方法，其特征在于，在所述步骤S11与所述步骤S12之间，还包括以下步骤：The non-plasma etching method according to claim 4 or 5, further comprising the following steps between the step S11 and the step S12:
    S21，判断所述步骤S11的刻蚀厚度是否达到预定范围，若否，则返回所述步骤S11；若是，则进行所述步骤S12；S21: Determine whether the etching thickness in step S11 has reached a predetermined range; if not, return to step S11; if yes, proceed to step S12;
    在所述步骤S12之后，还包括以下步骤：After the step S12, the following steps are further included:
    S22，判断所述步骤S12的刻蚀厚度是否达到预定范围，若否，则返回所述步骤S12；若是，则流程结束。S22. It is determined whether the etching thickness in step S12 has reached a predetermined range. If not, the process returns to step S12; if it is, the process ends.
  8. 如权利要求4或5所述的非等离子刻蚀方法，其特征在于，在所述步骤S11与所述步骤S12之间，还包括以下步骤：The non-plasma etching method according to claim 4 or 5, further comprising the following steps between the step S11 and the step S12:
    S3，向所述反应腔室中通入吹扫气体，以去除所述反应腔室中的残气。S3. A purge gas is passed into the reaction chamber to remove the residual gas in the reaction chamber.
  9. 如权利要求3所述的非等离子刻蚀方法，其特征在于，通过一次或多次对二氧化硅和氮化硅的刻蚀，以使所述二氧化硅和氮化硅的刻蚀厚度达到最终要求。The non-plasma etching method according to claim 3, wherein the silicon dioxide and silicon nitride are etched one or more times to achieve an etching thickness of the silicon dioxide and silicon nitride. Final request.
  10. 如权利要求4或5所述的非等离子刻蚀方法，其特征在于，交替进行所述步骤S11和所述步骤S12至少两次，以使所述二氧化硅和氮化硅的刻蚀厚度达到最终要求。The non-plasma etching method according to claim 4 or 5, wherein the step S11 and the step S12 are alternately performed at least twice so that the etching thickness of the silicon dioxide and silicon nitride reaches Final request.
  11. 如权利要求4或5所述的非等离子刻蚀方法，其特征在于，所述步骤S11和所述步骤S12在同一反应腔室或不同反应腔室中进行。The non-plasma etching method according to claim 4 or 5, wherein the step S11 and the step S12 are performed in the same reaction chamber or different reaction chambers.
  12. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述含氟气体包括F 2、XeF 2、ClF 3中的一种或多种。 The non-plasma etching method according to claim 2, wherein the fluorine-containing gas comprises one or more of F 2 , XeF 2 , and ClF 3 .
  13. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述羟基化合物包括醇类化合物或酚类化合物。The non-plasma etching method according to claim 2, wherein the hydroxyl compound comprises an alcohol compound or a phenol compound.
  14. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述含氟气体的流量是所述氟化氢的流量的0.5倍。The non-plasma etching method according to claim 2, wherein the flow rate of the fluorine-containing gas is 0.5 times the flow rate of the hydrogen fluoride.
  15. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述羟基化合物的流量是所述氟化氢的流量的1-2倍。The non-plasma etching method according to claim 2, wherein the flow rate of the hydroxyl compound is 1-2 times the flow rate of the hydrogen fluoride.
  16. 如权利要求2所述的非等离子刻蚀方法，其特征在于，所述含氟气体与所述羟基化合物的流量比例的取值范围为10：1-1：10。The non-plasma etching method according to claim 2, wherein a value range of a flow rate ratio of the fluorine-containing gas to the hydroxyl compound is 10: 1-1: 10.
  17. 如权利要求14-16中的任意一项所述的非等离子刻蚀方法，其特征在于，所述含氟气体的流量小于或者等于400sccm。The non-plasma etching method according to any one of claims 14 to 16, wherein the flow rate of the fluorine-containing gas is less than or equal to 400 sccm.
  18. 如权利要求14-16中的任意一项所述的非等离子刻蚀方法，其特征在于，所述羟基化合物的流量小于或者等于1000sccm。The non-plasma etching method according to any one of claims 14 to 16, wherein the flow rate of the hydroxy compound is less than or equal to 1000 sccm.
  19. 如权利要求14-16中的任意一项所述的非等离子刻蚀方法，其特征在于，所述氟化氢的流量的取值范围为50-1000sccm。The non-plasma etching method according to any one of claims 14 to 16, wherein the value range of the flow rate of the hydrogen fluoride is 50-1000 sccm.
  20. 如权利要求1所述的非等离子刻蚀方法，其特征在于，所述反应腔室的压力小于或者等于300Torr；所述反应腔室的温度为15-105℃。The non-plasma etching method according to claim 1, wherein the pressure of the reaction chamber is less than or equal to 300 Torr; and the temperature of the reaction chamber is 15-105 ° C.
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