WO2019200776A1 - 显影方法以及金属层的图形化处理方法 - Google Patents
显影方法以及金属层的图形化处理方法 Download PDFInfo
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- WO2019200776A1 WO2019200776A1 PCT/CN2018/098298 CN2018098298W WO2019200776A1 WO 2019200776 A1 WO2019200776 A1 WO 2019200776A1 CN 2018098298 W CN2018098298 W CN 2018098298W WO 2019200776 A1 WO2019200776 A1 WO 2019200776A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Definitions
- the present invention relates to the field of liquid crystal display, and in particular to a developing method and a pattern processing method for a metal layer.
- Embodiments of the present invention provide a developing method, including the following steps:
- the first developer layer partially reacts with the first photoresist layer to complete the first development, and forms a second photoresist layer on the substrate, and the photoresist on the second photoresist layer a developing turbid layer and a second developer layer on the photoresist/developing mixture layer;
- Second development scraping the second developer layer and mixing the exposed/developed turbid layer on the exposed and unexposed areas, and the mixed photoresist/developing turbid layer continues with the second The photoresist layer reacts for a second development;
- the remaining developer on the remaining substrate is removed after the second development is completed.
- a scraper is used to scrape the second developer layer; the substrate is in a transport state during development.
- the substrate is shaken to further enhance the photoresist/developing turbid layer on the exposed and unexposed areas.
- the degree of mixing is the degree of mixing.
- a metal layer is disposed on the substrate, and the first photoresist layer is disposed on the metal layer.
- the first photoresist layer has a thickness of 1.5 um.
- Embodiments of the present invention also provide a developing method, including the following steps:
- the first developer layer partially reacts with the first photoresist layer to complete the first development, and forms a second photoresist layer on the substrate, and the photoresist on the second photoresist layer a developing turbid layer and a second developer layer on the photoresist/developing mixture layer;
- Second development scraping the second developer layer and mixing the exposed/developed turbid layer on the exposed and unexposed areas, and the mixed photoresist/developing turbid layer continues with the second The photoresist layer reacts for a second development;
- the remaining developer on the remaining substrate is removed after the second development is completed.
- a scraper is used to scrape the second developer layer.
- the substrate is shaken to further enhance the photoresist/developing turbid layer on the exposed and unexposed areas.
- the degree of mixing is the degree of mixing.
- a metal layer is disposed on the substrate, and the first photoresist layer is disposed on the metal layer.
- the first photoresist layer has a thickness of 1.5 um.
- the substrate is in a transport state during development.
- a graphical processing method for a metal layer comprising the steps of:
- the first developer layer partially reacts with the first photoresist layer to complete the first development, and forms a second photoresist layer on the substrate, and the photoresist on the second photoresist layer a developing turbid layer and a second developer layer on the photoresist/developing mixture layer;
- Second development scraping the second developer layer and mixing the exposed/developed turbid layer on the exposed and unexposed areas, and the mixed photoresist/developing turbid layer continues with the second The photoresist layer reacts for a second development;
- etching is performed to remove the metal layer not covered by the second photoresist layer.
- the second developer layer is scraped off by a doctor blade.
- the substrate is shaken to further enhance the light on the exposed area and the unexposed area.
- the degree of mixing of the hindered/developed turbid layer is a degree of mixing of the hindered/developed turbid layer.
- the first photoresist layer has a thickness of 1.5 um.
- the substrate is in a transport state during development.
- the present invention provides a substrate on which an exposed first photoresist layer is disposed, the first photoresist layer having an exposed region and an unexposed region; and the first photoresist layer Uniformly coating the developer to form a first developer layer; first development: the first developer layer partially reacts with the first photoresist layer to complete the first development, and forms a second light on the substrate a resist layer, a photoresist/developing turbid layer on the second photoresist layer, and a second developer layer on the photoresist/developing mixture layer; a second development: scraping the second developer layer, and The exposed/developed turbid layer on the exposed and unexposed areas is mixed, and the mixed photoresist/developing turbid layer continues to react with the second photoresist layer for second development; second development After the completion, the remaining developer on the remaining substrate is removed; the development operation on the substrate is completed, which has the beneficial effects of improving the utilization ratio of the developer and optimizing the development uniformity.
- FIG. 1 is a schematic flow chart of a developing method in some embodiments of the present invention.
- FIG. 2 is a schematic structural view of a first photoresist layer in some embodiments of the present invention.
- 3 to 5 are detailed flow charts of a developing method in some embodiments of the present invention.
- FIG. 6 is a schematic flow chart of a method for patterning a metal layer in some embodiments of the present invention.
- first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
- features defining “first” or “second” may include one or more of the described features either explicitly or implicitly.
- the meaning of "a plurality” is two or more unless specifically and specifically defined otherwise.
- connection In the description of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; may be mechanically connected, may be electrically connected or may communicate with each other; may be directly connected, or may be indirectly connected through an intermediate medium, may be internal communication of two elements or interaction of two elements relationship.
- Connected, or integrally connected may be mechanically connected, may be electrically connected or may communicate with each other; may be directly connected, or may be indirectly connected through an intermediate medium, may be internal communication of two elements or interaction of two elements relationship.
- the specific meanings of the above terms in the present invention can be understood on a case-by-case basis.
- the first feature "on” or “under” the second feature may include direct contact of the first and second features, and may also include first and second features, unless otherwise specifically defined and defined. It is not in direct contact but through additional features between them.
- the first feature "above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
- the first feature “below”, “below” and “below” the second feature includes the first feature directly below and below the second feature, or merely the first feature level being less than the second feature.
- FIG. 1 is a flow chart of a developing method in some embodiments of the present invention, the developing method comprising the following steps:
- the first development the first developer layer reacts with the first photoresist layer to complete the first development, and forms a second photoresist layer on the substrate and is located on the second photoresist layer.
- a scraper is used to scrape the second developer layer.
- the substrate 10 may be a glass substrate on which a metal layer is formed, and the first photoresist layer 20 is disposed on the metal layer.
- the first photoresist layer 20 is subjected to exposure processing to form an exposed region A and an unexposed region B.
- the first photoresist layer 20 has a thickness of 1.5 um.
- the developer solution is uniformly coated on the first photoresist layer 20 by moving the substrate 10 to form the first developer layer 20.
- the substrate 10 is in a transport state during development.
- the developer continuously dissolves the photoresist in the first photoresist layer 10.
- a second photoresist layer 21 on the substrate 10 a photoresist/developing turbid layer 23 on the second photoresist layer 21, and a second developer layer 31 on the photoresist/developing mixture layer 23 are finally formed.
- the photoresist on the non-exposed area B dissolves more, the photoresist/developing mixture layer on the non-exposed area B has been passivated, that is, the dissolved light has been stopped. Resistor. While the photoresist on the exposed area A dissolves less, it can continue to dissolve the photoresist.
- the second developer layer 31 is scraped off by a wiper strip, and the photoresist is resisted/developed on the exposed and unexposed regions during the scraping process.
- the mixed liquid layer generates a disturbance such that the mixed liquid in the exposed/developed mixed liquid layer on the exposed area and the unexposed area is mixed, so that the concentration of the photoresist of the photoresist/developing mixed layer on the unexposed area is lowered, The passivation is thereby broken so that the photoresist/developing mixture layer on the unexposed area continues to react with the second photoresist layer 21 to complete the second development.
- the substrate can be shaken to further enhance the degree of mixing of the photoresist/developing haze layer on the exposed and unexposed regions.
- an air knife or a liquid knife may be used to remove the residual developer.
- the present invention provides a substrate on which an exposed first photoresist layer is disposed, the first photoresist layer having an exposed region and an unexposed region; and the first photoresist layer Uniformly coating the developer to form a first developer layer; first development: the first developer layer partially reacts with the first photoresist layer to complete the first development, and forms a second light on the substrate a resist layer, a photoresist/developing turbid layer on the second photoresist layer, and a second developer layer on the photoresist/developing mixture layer; a second development: scraping the second developer layer, and The exposed/developed turbid layer on the exposed and unexposed areas is mixed, and the mixed photoresist/developing turbid layer continues to react with the second photoresist layer for second development; second development After the completion, the remaining developer on the remaining substrate is removed; the development operation on the substrate is completed, which has the beneficial effects of improving the utilization ratio of the developer and optimizing the development uniformity.
- FIG. 6 is a schematic diagram of a method for processing a metal layer according to some embodiments of the present invention.
- the method for patterning the metal layer can be used in the fabrication of an array substrate of a liquid crystal display panel, for example, fabricating an array substrate. a light-shielding metal layer, a thin film transistor, a pixel electrode layer, a common electrode layer, or the like.
- the graphical processing method of the metal layer includes the following steps:
- first development the first developer layer and the first photoresist layer partially react to complete the first development, and form a second photoresist layer on the substrate, located on the second photoresist layer a photoresist/developing turbid layer and a second developer layer on the photoresist/developing mixture layer;
- the steps S204 to S207 are the same as the steps S102 to S105 in the above embodiment, and therefore will not be described again.
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- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
一种显影方法,包括以下步骤:提供一基板(10),基板(10)上设置有经过曝光处理后的第一光阻层(20),第一光阻层(20)具有已曝光区域(A)以及未曝光区域(B)(S101);在第一光阻层(20)上均匀涂布显影液形成第一显影液层(30)(S102);进行第一次显影(S103);进行第二次显影(S104);第二次显影完成后去除剩余的基板(10)上残余的显影液(S105)。
Description
本发明涉及液晶显示领域,具体涉及一种显影方法以及金属层的图形化处理方法。
现有技术中,由于在显影时已曝光区域的光阻层和未曝光区域的光阻层在显影液的溶解度不相同,导致显影时存在一定的显影液浪费,不能有效避免因图形设计导致的显影不均。
因此,现有技术存在缺陷,急需改进。
本发明实施例的目的是提供一种显影方法以及金属层的图形化处理方法,具有提高显影液的利用率以及优化显影均匀性的有益效果。
本发明实施例提供一种显影方法,包括以下步骤:
提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域;
在该第一光阻层上均匀涂布显影液形成第一显影液层;
第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;
第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;
第二次显影完成后去除剩余的所述基板上残余的显影液。
采用刮条来刮除所述第二显影液层;所述基板在显影过程中处于传送状态。
在本发明所述的显影方法中,在第二次显影中采用刮条刮除该第二显影液层之后,震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
在本发明所述的显影方法中,所述基板上设置有金属层,所述第一光阻层设置于所述金属层上。
在本发明所述的显影方法中,所述第一光阻层的厚度为1.5um。
本发明实施例还提供一种显影方法,包括以下步骤:
提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域;
在该第一光阻层上均匀涂布显影液形成第一显影液层;
第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;
第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;
第二次显影完成后去除剩余的所述基板上残余的显影液。
在本发明所述的显影方法中,采用刮条来刮除所述第二显影液层。
在本发明所述的显影方法中,在第二次显影中采用刮条刮除该第二显影液层之后,震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
在本发明所述的显影方法中,所述基板上设置有金属层,所述第一光阻层设置于所述金属层上。
在本发明所述的显影方法中,所述第一光阻层的厚度为1.5um。
在本发明所述的显影方法中,所述基板在显影过程中处于传送状态。
一种金属层的图形化处理方法,包括以下步骤:
提供一基板,所述基板上设置有金属沉积层;
在所述金属沉积层上设置第一光阻层;
对所述第一光阻层进行曝光处理,以形成已曝光区域以及未曝光区域,所述已曝光区域形成目标图形;
在该第一光阻层上均匀涂布显影液形成第一显影液层;
第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;
第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;
第二次显影完成后去除剩余的所述基板上残余的显影液;
对完成显影后,进行刻蚀,以除去未被第二光阻层覆盖的金属层。
在本发明所述的金属层的图形化处理方法中,采用刮条来刮除所述第二显影液层。
在本发明所述的金属层的图形化处理方法中,在第二次显影中采用刮条刮除该第二显影液层之后,震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
在本发明所述的金属层的图形化处理方法中,所述第一光阻层的厚度为1.5um。
在本发明所述的金属层的图形化处理方法中,所述基板在显影过程中处于传送状态。
由上可知,本发明通过提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域;在该第一光阻层上均匀涂布显影液形成第一显影液层;第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;第二次显影完成后去除剩余的所述基板上残余的显影液;完成对基板的显影操作,具有提高显影液的利用率以及优化显影均匀性的有益效果。
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明一些实施例中的显影方法的流程示意图。
图2为本发明一些实施例中的第一光阻层的结构示意图。
图3-图5为本发明一些实施例中的显影方法的详细流程示意图。
图6为本发明一些实施例中的金属层的图形化处理方法的流程示意图。
下面详细描述本发明的实施方式,所述实施方式的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接或可以相互通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本发明。此外,本发明可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本发明提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请参阅图1,图1是本发明一些实施例中的显影方法的流程图,该显影方法包括以下步骤:
S101、提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域。
S102、在该第一光阻层上均匀涂布显影液形成第一显影液层。
S103、第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层。
S104、第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影。
S105、第二次显影完成后去除剩余的所述基板上残余的显影液。
在本发明所述的显影方法中,采用刮条来刮除所述第二显影液层。
下面结合附图2-5对该显影方法的各个步骤进行详细说明。
在该步骤S101中,该基板10可以是玻璃基板,该玻璃基板上形成有金属层,该第一光阻层20设置在该金属层上。该第一光阻层20进行曝光处理后形成了已曝光区域A以及未曝光区域B。该第一光阻层20的厚度为1.5um。在该步骤S102中,通过移动该基板10的方式在该第一光阻层20上均匀涂布显影液形成第一显影液层20。基板10在显影过程中处于传送状态。
在该步骤S103中,显影液会不断溶解该第一光阻层10中的光阻剂。从而最后形成位于基板10上的第二光阻层21、位于第二光阻层21上的光阻/显影混浊层23以及位于光阻/显影混合液层23上的第二显影液层31。其中,完成第一次显影后,由于非曝光区域B上的光阻剂溶解较多,使得该非曝光区域B上的光阻/显影混合液层已经出现钝化,也即是已经停止溶解光阻剂。而该已曝光区域A上的光阻剂溶解较少,其还可以继续溶解光阻剂。
在该步骤S104中,第二次显影时,采用刮条刮除该第二显影液层31,并且在刮除过程中,该刮条对该已曝光区域以及未曝光区域上的光阻/显影混合液层产生扰动,使得已曝光区域以及未曝光区域上的光阻/显影混合液层中的混合液混合,使得未曝光区域上的光阻/显影混合液层的光阻剂的浓度降低,从而破除钝化,使得该未曝光区域上的光阻/显影混合液层继续与第二光阻层21发生反应,完成第二次显影。在第二次显影中采用刮条刮除该第二显影液层之后,可以震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
在该步骤S105中,可以采用风刀或者液刀来去除该残余的显影液。
由上可知,本发明通过提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域;在该第一光阻层上均匀涂布显影液形成第一显影液层;第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;第二次显影完成后去除剩余的所述基板上残余的显影液;完成对基板的显影操作,具有提高显影液的利用率以及优化显影均匀性的有益效果。
请参照图6,图6是本发明一些实施例中的金属层的图形化处理方法,该金属层的图形化处理方法可以用于液晶显示面板的阵列基板的制作中,例如,制作阵列基板的遮光金属层、薄膜晶体管、像素电极层或公共电极层等。
其中,该金属层的图形化处理方法,包括以下步骤:
S201、提供一基板,所述基板上设置有金属沉积层;
S202、在所述金属沉积层上设置第一光阻层;
S203、对所述第一光阻层进行曝光处理,以形成已曝光区域以及未曝光区域,所述已曝光区域形成目标图形;
S204、在该第一光阻层上均匀涂布显影液形成第一显影液层;
S205、第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;
S206、第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;
S207、第二次显影完成后去除剩余的所述基板上残余的显影液;
S208、完成显影后,进行刻蚀,以除去未被第二光阻层覆盖的金属层。
其中,步骤S204-步骤S207与上述实施例中的步骤S102-步骤S105相同,故不赘述。
在该步骤S208中,刻蚀工艺与现有技术中的类似,故不赘述。
以上对本发明实施例提供的显影方法以及金属层的图形化处理方法进行了详细介绍,本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明。同时,对于本领域的技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本发明的限制。
Claims (15)
- 一种显影方法,其包括以下步骤:提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域;在该第一光阻层上均匀涂布显影液形成第一显影液层;第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;第二次显影完成后去除剩余的所述基板上残余的显影液。采用刮条来刮除所述第二显影液层;所述基板在显影过程中处于传送状态。
- 根据权利要求1所述的显影方法,其中,在第二次显影中采用刮条刮除该第二显影液层之后,震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
- 根据权利要求1所述的显影方法,其中,所述基板上设置有金属层,所述第一光阻层设置于所述金属层上。
- 根据权利要求1所述的显影方法,其中,所述第一光阻层的厚度为1.5um。
- 一种显影方法,其包括以下步骤:提供一基板,该基板上设置有经过曝光处理后的第一光阻层,所述第一光阻层具有已曝光区域以及未曝光区域;在该第一光阻层上均匀涂布显影液形成第一显影液层;第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;第二次显影完成后去除剩余的所述基板上残余的显影液。
- 根据权利要求5所述的显影方法,其中,采用刮条来刮除所述第二显影液层。
- 根据权利要求6所述的显影方法,其中,在第二次显影中采用刮条刮除该第二显影液层之后,震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
- 根据权利要求5所述的显影方法,其中,所述基板上设置有金属层,所述第一光阻层设置于所述金属层上。
- 根据权利要求5所述的显影方法,其中,所述第一光阻层的厚度为1.5um。
- 根据权利要求5所述的显影方法,其中,所述基板在显影过程中处于传送状态。
- 一种金属层的图形化处理方法,其包括以下步骤:提供一基板,所述基板上设置有金属沉积层;在所述金属沉积层上设置第一光阻层;对所述第一光阻层进行曝光处理,以形成已曝光区域以及未曝光区域,所述已曝光区域形成目标图形;在该第一光阻层上均匀涂布显影液形成第一显影液层;第一次显影:所述第一显影液层与所述第一光阻层部分反应完成第一次显影,并形成位于基板上的第二光阻层、位于第二光阻层上的光阻/显影混浊层以及位于光阻/显影混合液层上的第二显影液层;第二次显影:刮除所述第二显影液层,并将已曝光区域以及未曝光区域上的光阻/显影混浊层进行混合,混合后的光阻/显影混浊层继续与所述第二光阻层进行反应以进行第二次显影;第二次显影完成后去除剩余的所述基板上残余的显影液;完成显影后,进行刻蚀,以除去未被第二光阻层覆盖的金属层。
- 根据权利要求11所述的金属层的图形化处理方法,其中,采用刮条来刮除所述第二显影液层。
- 根据权利要求12所述的金属层的图形化处理方法,其中,在第二次显影中采用刮条刮除该第二显影液层之后,震动该基板,进一步增强已曝光区域以及未曝光区域上的光阻/显影混浊层的混合度。
- 根据权利要求11所述的金属层的图形化处理方法,其中,所述第一光阻层的厚度为1.5um。
- 根据权利要求11所述的金属层的图形化处理方法,其中,所述基板在显影过程中处于传送状态。
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