WO2019196613A1 - Oled器件及其制造方法和显示面板 - Google Patents

Oled器件及其制造方法和显示面板 Download PDF

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WO2019196613A1
WO2019196613A1 PCT/CN2019/078881 CN2019078881W WO2019196613A1 WO 2019196613 A1 WO2019196613 A1 WO 2019196613A1 CN 2019078881 W CN2019078881 W CN 2019078881W WO 2019196613 A1 WO2019196613 A1 WO 2019196613A1
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layer
sub
electrode layer
pixel
electrode
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PCT/CN2019/078881
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English (en)
French (fr)
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李晓虎
闫华杰
战泓升
刘暾
焦志强
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京东方科技集团股份有限公司
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Priority to US16/492,265 priority Critical patent/US11404490B2/en
Publication of WO2019196613A1 publication Critical patent/WO2019196613A1/zh
Priority to US17/806,919 priority patent/US11744131B2/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • Embodiments of the present disclosure relate to an OLED device, a method of fabricating the same, and a display panel employing the OLED device.
  • the lengths of the microcavities of the red OLED, the green OLED, and the blue OLED are different, for example, the lengths of the microcavities of the light emitting regions of the blue OLED and the green OLED are different.
  • an additional hole transport layer is typically provided in the green OLED and the red OLED to increase the length of the microcavities of the green OLED and the red OLED.
  • an additional fine metal reticle is usually required.
  • An embodiment of the present disclosure provides an OLED device including: a substrate; a first electrode layer, the first electrode layer including: a first sub-electrode layer, the first sub-electrode layer being disposed on the substrate And a second sub-electrode layer electrically connected to the first sub-electrode layer, the first electrode layer being one of an anode layer and a cathode layer;
  • the color film layer is disposed on the first sub-electrode layer, and the second sub-electrode layer is disposed on the color film layer; a light-emitting layer; and a second electrode layer, the second The electrode layer is the other of the anode layer and the cathode layer, and the light emitting layer is disposed between the second sub-electrode layer and the second electrode layer of the first electrode layer.
  • the first electrode layer is an anode layer
  • the second electrode layer is a cathode layer
  • the OLED device further includes: a hole injection layer and a hole transport layer disposed between the second sub-electrode layer and the light-emitting layer; and disposed on the light-emitting layer and An electron transport layer between the second electrode layers.
  • the color film layer includes a color resistance disposed in one-to-one correspondence with each sub-pixel of each pixel, a gap between adjacent two color resistors, and the second sub-electrode layer passes through the The gap is electrically connected to the first sub-electrode layer.
  • the color film layer includes color resists having different thicknesses that are respectively disposed in one-to-one correspondence with each sub-pixel of each pixel and having the same color as each sub-pixel of each pixel.
  • the plurality of color resists of the color film layer include: a red resistance, a green resistance, a blue resistance, and a thickness of the green resistance is greater than a thickness of the blue resistance and less than a thickness of the red resistance.
  • the OLED device further includes: an electron blocking layer disposed between the hole transport layer and the light emitting layer.
  • the first sub-electrode layer is a reflective electrode layer
  • the second sub-electrode layer is a transparent conductive film
  • the OLED device further includes: a pixel defining layer, the pixel defining layer is extended upward by the second sub-electrode layer, and the pixel defining layer is located under the second electrode layer, The pixel defining layer defines a light emitting region of each sub-pixel.
  • Embodiments of the present disclosure also provide a method of fabricating an OLED device, comprising: forming a first sub-electrode layer on a substrate; forming a color film layer on the first sub-electrode layer; and forming a color film layer on the color film layer Forming a second sub-electrode layer, the second sub-electrode layer and the first sub-electrode layer being electrically connected to each other, wherein the first sub-electrode layer and the second sub-electrode layer constitute a first electrode layer,
  • the first electrode layer is one of an anode layer and a cathode layer; forming a light emitting layer; and forming a second electrode layer, the second electrode layer being the other of the anode layer and the cathode layer, and the light emitting layer is disposed at Between the second sub-electrode layer of the first electrode layer and the second electrode layer.
  • the first electrode layer is an anode layer
  • the second electrode layer is a cathode layer
  • the method of fabricating the OLED device further includes: sequentially forming a hole injecting layer and a hole transporting layer on the second sub-electrode layer before forming the light-emitting layer; and forming An electron transport layer is formed on the light emitting layer before the second electrode layer.
  • the method of fabricating the OLED device further includes forming a gap between adjacent two sub-pixels of each pixel on the color film layer before forming the second sub-electrode layer
  • the second sub-electrode layer is electrically connected to the first sub-electrode layer through the gap.
  • the method of fabricating the OLED device further includes: forming a pixel defining layer on the second sub-electrode layer after forming the second sub-electrode layer, before forming the hole injecting layer,
  • the pixel defining layer defines a light emitting region of each sub-pixel.
  • the color film layer includes color resists having different thicknesses that are respectively disposed in one-to-one correspondence with each sub-pixel of each pixel and having the same color as each sub-pixel of each pixel.
  • the plurality of color resists of the color film layer include: a red resistance, a green resistance, and a blue resistance, and the thickness of the green resistance is greater than a thickness of the blue resistance and less than a thickness of the red resistance.
  • the first sub-electrode layer is a reflective electrode layer
  • the second sub-electrode layer is a transparent conductive film
  • An embodiment of the present disclosure also provides a display panel comprising: the above OLED device.
  • FIG. 1 is a schematic structural view of an OLED device according to an embodiment of the present disclosure
  • FIG. 2 is a schematic flow chart of a method of fabricating an OLED device according to an embodiment of the present disclosure.
  • an embodiment of the present disclosure provides an OLED device 100 including a substrate 101 , a first electrode layer 102 , 103 , a color film layer 104 , an emission layer 107 , and a second electrode layer 109 .
  • the first electrode layer 102, 103 includes: a first sub-electrode layer 102, the first sub-electrode layer 102 is disposed on the substrate 101; and a second sub-electrode layer 103, the second sub-electrode layer 103 is electrically connected to the first sub-electrode layer 102.
  • the first electrode layers 102, 103 are one of an anode layer and a cathode layer.
  • the color film layer 104 is disposed on the first sub-electrode layer 102, and the second sub-electrode layer 103 is disposed on the color film layer 104.
  • the second electrode layer 109 is the other of the anode layer and the cathode layer, and the light emitting layer 107 is disposed on the second sub-electrode layer 103 and the second electrode of the first electrode layer 102, 103 Between layers 109.
  • the first electrode layers 102, 103 are anode layers, and the second electrode layer 109 is a cathode layer.
  • the first electrode layer 102, 103 is a cathode layer
  • the second electrode layer 109 is an anode layer.
  • the OLED device 100 further includes a hole injection layer 105 and hole transport disposed between the second sub-electrode layer 103 and the light-emitting layer 107. a layer 106; and an electron transport layer 108 disposed between the light emitting layer 107 and the second electrode layer 109.
  • the OLED device 100 further includes a pixel defining layer 120 extending upward from the second sub-electrode layer 103, and the pixel defining layer 120 is located under the second electrode layer 109.
  • the pixel defining layer 120 defines a light emitting region of each of the sub-pixels 201, 202, 203.
  • the color film layer 104 includes color resists 1041 , 1042 , 1043 disposed in one-to-one correspondence with each of the sub-pixels 201 , 202 , 203 of each pixel, and a color resistance 1041 .
  • the color film layer 104 is disposed in one-to-one correspondence with each of the sub-pixels 201, 202, and 203 of each pixel, and has the same color and different thickness as each of the sub-pixels 201, 202, and 203 of each pixel.
  • Each of the sub-pixels 201, 202, and 203 may be a red sub-pixel 201, a green sub-pixel 202, and a blue sub-pixel 203.
  • the plurality of color resists of the color film layer 104 may include a red resistor 1041, a green resistor 1042, and a blue resistor 1043, and the thickness of the green resistor 1042 is greater than the thickness of the blue resistor 1043 and smaller than the thickness of the red resistor 1041.
  • the plurality of color resists of the color film layer 104 may also include a plurality of color resists of other colors, and each of the sub-pixels 201, 202, and 203 may be sub-pixels of other colors.
  • the first sub-electrode layer 102 is a reflective electrode layer
  • the second sub-electrode layer 103 is a transparent conductive film.
  • the OLED device 100 includes a substrate 101 which is sequentially stacked, a first anode layer as the first sub-electrode layer 102, a color film layer 104, and a second sub-electrode layer.
  • a pixel defining layer 120 is further formed between the second sub-electrode layer 103 and the electron transport layer 108 for separating a plurality of sub-pixels 201, 202, 203 of each pixel in the light-emitting area, for example, a red sub-pixel 201, green Sub-pixel 202 and blue sub-pixel 203.
  • the substrate 101 is a glass substrate.
  • the first sub-electrode layer 102 is a reflective anode adhered to the glass substrate and formed of an Ag or ITO film for reflection projection to the first sub- Light from the electrode layer 102.
  • the first sub-electrode layer 102 is provided with an opening at a boundary of each two adjacent sub-pixels of the corresponding sub-pixels 201, 202, 203.
  • the color film layer 104 is disposed on the first sub-electrode layer 102 and fills the opening of the first sub-electrode layer 102 .
  • the color film layer 104 further sets color resists 1041, 1042, and 1043 in one-to-one correspondence with each of the sub-pixels 201, 202, and 203 of each pixel, and has a gap between adjacent two color resists in the color resists 1041, 1042, and 1043.
  • each of the sub-pixels 201, 202, and 203 may be a red sub-pixel 201, a green sub-pixel 202, and a blue sub-pixel 203.
  • the color film layer 104 is provided with a red resistance 1041, a green resistance 1042, and a blue color.
  • the resistance is 1043
  • the thickness of the green resistor 1042 is greater than the thickness of the blue resistor 1043 and less than the thickness of the red resistor 1041.
  • the second sub-electrode layer 103 is a transparent conductive film, which may be an ITO film.
  • the second sub-electrode layer 103 is disposed on the color film layer 104 and electrically connected to the first sub-electrode layer 102 through the gap on the color film layer 104.
  • the color film layer 104 since the color film layer 104 is disposed, most of the light rays incident from the outside can be absorbed, thereby avoiding the use of the polarizing plate; meanwhile, the microcavity corresponding to the different light emitting regions
  • the thicknesses of the color resists 1041, 1042, and 1043 of the color filter layer 104 are different, and it is not necessary to provide an additional hole transport layer in the green OLED and the red OLED, which reduces the thickness of the OLED device 100 and also improves the yield of the product.
  • the pixel defining layer 120 defines a light emitting area of each of the sub-pixels 201, 202, 203 for isolating different sub-pixels 201, 202, 203 to avoid occurrence. Color mixing phenomenon.
  • the pixel defining layer 120 is connected at one end to the color filter layer 104 between the second sub-electrode layer 103 and/or the second sub-electrode layer 103 of the adjacent two OLEDs, and the other end extends to the Electron transport layer 108.
  • the pixel defining layer 120 may also extend from the second sub-electrode layer to other layers below the second electrode layer and above the hole transport layer.
  • the OLED device 100 further includes an electron blocking layer 110 disposed between the light emitting layer 107 and the hole transport layer 106 for preventing electrons from being emitted from the light emitting layer. 107 penetrates into the hole transport layer 106, ensuring that electrons and holes are only bonded at the light-emitting layer 107, improving luminous efficiency.
  • an electron blocking layer 110 disposed between the light emitting layer 107 and the hole transport layer 106 for preventing electrons from being emitted from the light emitting layer.
  • 107 penetrates into the hole transport layer 106, ensuring that electrons and holes are only bonded at the light-emitting layer 107, improving luminous efficiency.
  • the OLED device 100 further includes a first inorganic layer 130 , an organic layer 140 , and a second inorganic layer 150 disposed on the second electrode layer 109 in sequence.
  • an embodiment of the present disclosure further provides a manufacturing method of an OLED device 100, the manufacturing method comprising: step S101: forming a first sub-electrode layer 102 on a substrate 101; and step S102: Forming a color film layer 104 on the first sub-electrode layer 102; step S103: forming a second sub-electrode layer 103 on the color film layer 104, and the second sub-electrode layer 103 and the first sub-electrode layer 102 Electrically connected to each other; step S104: forming the light-emitting layer 107; and step S105: forming the second electrode layer 109.
  • the first sub-electrode layer 102 and the second sub-electrode layer 103 constitute a first electrode layer 102, 103, and the first electrode layer 102, 103 is one of an anode layer and a cathode layer, and the second electrode The layer 109 is the other of the anode layer and the cathode layer, and the light emitting layer 107 is disposed between the second sub-electrode layer 103 of the first electrode layers 102, 103 and the second electrode layer 109.
  • the first electrode layers 102, 103 are anode layers, and the second electrode layer 109 is a cathode layer.
  • the first electrode layer 102, 103 is a cathode layer
  • the second electrode layer 109 is an anode layer.
  • the method of fabricating the OLED device 100 further includes sequentially forming a hole injection layer 105 on the second sub-electrode layer 103 and before forming the light-emitting layer 107.
  • the hole transport layer 106; and an electron transport layer 108 is formed on the light emitting layer 107 before the second electrode layer 109 is formed.
  • the manufacturing method of the OLED device 100 further includes: adjacent to each of the sub-pixels 201, 202, 203 corresponding to each pixel on the color film layer 104 before the second sub-electrode layer 103 is formed.
  • the manufacturing method of the OLED device 100 may further include: forming a pixel defining layer 120 on the second sub-electrode layer 103 after forming the second sub-electrode layer 103, the pixel
  • the defining layer 120 defines a light emitting region of each of the sub-pixels 201, 202, 203.
  • the color film layer 104 includes a sub-pixel 201 corresponding to each sub-pixel 201 , 202 , 203 of each pixel and each sub-pixel of each pixel, 202, 203 have the same color, different color resists 1041, 1042, 1043.
  • Each of the sub-pixels 201, 202, and 203 may be a red sub-pixel 201, a green sub-pixel 202, and a blue sub-pixel 203.
  • the plurality of color resists of the color film layer 104 may include: a red resistor 1041, a green resistor 1042, and a blue resistor 1043, and the thickness of the green resistor 1042 is greater than the thickness of the blue resistor 1043 and smaller than the thickness of the red resistor 1041.
  • the plurality of color resists of the color film layer 104 may also include a plurality of color resists of other colors, and each of the sub-pixels 201, 202, and 203 may be sub-pixels of other colors.
  • the first sub-electrode layer 102 is a reflective electrode layer
  • the second sub-electrode layer 103 is a transparent conductive film.
  • a method of fabricating an OLED device 100 includes the following steps:
  • an Ag or ITO film is formed on a glass substrate serving as the substrate 101 to constitute a first anode layer (ie, a reflective anode) as the first sub-electrode layer 102;
  • a color film layer 104 is disposed on the first sub-electrode layer 102, and a corresponding gap is set;
  • an ITO film is disposed on the color film layer 104 to form a second anode layer as the second sub-electrode layer 103, and the second sub-electrode layer 103 passes through the gap and the space on the color film layer 104.
  • the first sub-electrode layers 102 are electrically connected to each other;
  • a pixel defining layer 120 is disposed on the second sub-electrode layer 103, and the pixel defining layer 120 defines a light-emitting area of each of the sub-pixels 201, 202, 203;
  • a hole injection layer 105, a hole transport layer 106, an electron block layer 110, a light-emitting layer 107, an electron transport layer 108, a cathode layer as the second electrode layer 109, and a cathode layer are sequentially formed on the second sub-electrode layer 103, The first inorganic layer 130, the organic layer 140, and the second inorganic layer 150.
  • the thicknesses of the color resists 1041, 1042, and 1043 of the color film layer 104 corresponding to the microcavities of different light-emitting regions are different, it is not necessary to provide another hole transport layer in the green OLED and the red OLED.
  • the thickness of the OLED device 100 can be reduced and the yield of the product can be improved.
  • Embodiments of the present disclosure also provide a display panel including the above OLED device 100, which is reduced in thickness and light-emitting efficiency is improved by reducing the use of the polarizing plate.
  • the OLED device of the embodiment of the present disclosure by providing a color film on the first sub-electrode layer 102 (for example, a reflective anode), most of the light incident from the outside can be absorbed, and the device is prevented from being displayed in a bright state when not turned on.
  • the use of the polarizing plate can be avoided, so that the thickness of the device can be reduced; at the same time, since the color film thickness at different microcavities is different, it is not necessary to provide an additional hole transport layer in the green OLED and the red OLED, thereby avoiding additional fineness.
  • the use of a metal reticle reduces the thickness of the device and improves the yield of the product.

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Abstract

本公开的实施例提供了一种OLED器件、OLED器件制造方法及显示装置。OLED器件包括：衬底、第一电极层、彩膜层、发光层以及第二电极层，所述第一电极层包括：第一子电极层，所述第一子电极层设置于所述衬底上；以及第二子电极层，所述第二子电极层与所述第一子电极层相互电连接，所述第一电极层是阳极层和阴极层中的一个。所述彩膜层设置于所述第一子电极层上，且所述第二子电极层设置于所述彩膜层上。所述第二电极层是阳极层和阴极层中的另一个，并且所述发光层设置在所述第一电极层的所述第二子电极层与所述第二电极层之间。

Description

OLED器件及其制造方法和显示面板
相关申请的交叉引用
本申请要求于2018年4月13日递交中国专利局的、申请号为201810331748.8的中国专利申请的权益，该申请的全部公开内容以引用方式并入本文。
技术领域
本公开的实施例涉及一种OLED器件及其制造方法和采用该OLED器件的显示面板。
背景技术
在OLED器件中，红色OLED、绿色OLED和蓝色OLED的微腔的长度不同，例如，蓝色OLED与绿色OLED的发光区的微腔的长度相差
Figure PCTCN2019078881-appb-000001
蓝色OLED与红色OLED的发光区的微腔的长度相差
Figure PCTCN2019078881-appb-000002
因此，通常在绿色OLED和红色OLED中设置另外的空穴传输层，以增加绿色OLED和红色OLED的微腔的长度。在生产过程中，为了制备绿色OLED和红色OLED中的另外的空穴传输层，通常需要另外的精细金属掩模版。
发明内容
本公开的实施例提供了一种OLED器件，包括：衬底；第一电极层，所述第一电极层包括：第一子电极层，所述第一子电极层设置于所述衬底上；以及第二子电极层，所述第二子电极层与所述第一子电极层相互电连接，所述第一电极层是阳极层和阴极层中的一个；
彩膜层，所述彩膜层设置于所述第一子电极层上，且所述第二子电极层设置于所述彩膜层上；发光层；以及第二电极层，所述第二电极层是阳极层和阴极层中的另一个，并且所述发光层设置在所述第一电极层的所述第二子电极层与所述第二电极层之间。
根据本公开的实施例，所述第一电极层是阳极层，并且所述第二电极 层是阴极层。
根据本公开的实施例，所述的OLED器件还包括：设置在所述第二子电极层与所述发光层之间的空穴注入层和空穴传输层；以及设置在所述发光层与所述第二电极层之间的电子传输层。
根据本公开的实施例，所述彩膜层包括与每一像素的各子像素一一对应设置的色阻，相邻两色阻之间具有间隙，所述第二子电极层穿过所述间隙与所述第一子电极层相互电连接。
根据本公开的实施例，所述彩膜层包括与每一像素的各子像素一一对应设置的、与每一像素的各子像素的颜色分别相同的、具有不同厚度的色阻。
根据本公开的实施例，所述彩膜层的所述多个色阻包括：红色阻、绿色阻、蓝色阻，并且绿色阻的厚度大于蓝色阻的厚度且小于红色阻的厚度。
根据本公开的实施例，所述的OLED器件还包括：设于所述空穴传输层与所述发光层之间的电子阻挡层。
根据本公开的实施例，所述第一子电极层为反射电极层，并且所述第二子电极层为透明导电薄膜。
根据本公开的实施例，所述的OLED器件还包括：像素界定层，所述像素界定层由所述第二子电极层向上延伸，并且所述像素界定层位于所述第二电极层下方，所述像素界定层限定出各子像素的发光区。
本公开的实施例还提供了一种OLED器件的制造方法，包括：在衬底上形成第一子电极层；在所述第一子电极层上形成彩膜层；在所述彩膜层上形成第二子电极层，使所述第二子电极层与所述第一子电极层相互电连接，所述第一子电极层和所述第二子电极层构成第一电极层，所述第一电极层是阳极层和阴极层中的一个；形成发光层；以及形成第二电极层，所述第二电极层是阳极层和阴极层中的另一个，并且所述发光层设置在所述第一电极层的所述第二子电极层与所述第二电极层之间。
根据本公开的实施例，所述第一电极层是阳极层，并且所述第二电极层是阴极层。
根据本公开的实施例，所述的OLED器件的制造方法还包括：在形成 所述发光层之前，在所述第二子电极层上依次形成空穴注入层和空穴传输层；以及在形成所述第二电极层之前，在所述发光层上形成电子传输层。
根据本公开的实施例，所述的OLED器件的制造方法还包括：在形成所述第二子电极层之前，在所述彩膜层上对应每一像素的相邻两个子像素之间形成间隙，所述第二子电极层通过所述间隙与所述第一子电极层相互电连接。
根据本公开的实施例，所述的OLED器件的制造方法还包括：在形成第二子电极层之后、形成空穴注入层之前，在所述第二子电极层上形成像素界定层，所述像素界定层限定出各子像素的发光区。
根据本公开的实施例，所述彩膜层包括与每一像素的各子像素一一对应设置的、与每一像素的各子像素的颜色分别相同的、具有不同厚度的色阻。
根据本公开的实施例，所述彩膜层的多个色阻包括：红色阻、绿色阻、蓝色阻，并且绿色阻的厚度大于蓝色阻的厚度且小于红色阻的厚度。
根据本公开的实施例，所述第一子电极层为反射电极层，并且所述第二子电极层为透明导电薄膜。
本公开的实施例还提供了一种显示面板，包括：上述的OLED器件。
本公开的实施例的附加的方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本公开的实施例的实践了解到。
附图说明
本公开的实施例的上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为本公开的一种实施方式的OLED器件的结构示意图；以及
图2为本公开的一种实施方式的OLED器件的制造方法的示意流程图。
具体实施方式
下面详细描述本公开的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似 功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本公开的实施例，而不能解释为对本公开的限制。
参见图1，本公开的实施例提供了一种OLED器件100，该OLED器件100包括：衬底101、第一电极层102，103、彩膜层104、发光层107、以及第二电极层109。所述第一电极层102，103包括：第一子电极层102，所述第一子电极层102设置于所述衬底101上；以及第二子电极层103，所述第二子电极层103与所述第一子电极层102相互电连接。所述第一电极层102，103是阳极层和阴极层中的一个。所述彩膜层104设置于所述第一子电极层102上，且所述第二子电极层103设置于所述彩膜层104上。所述第二电极层109是阳极层和阴极层中的另一个，并且所述发光层107设置在所述第一电极层102，103的所述第二子电极层103与所述第二电极层109之间。
根据本公开的一个示例，如图1所示，所述第一电极层102，103是阳极层，并且所述第二电极层109是阴极层。作为选择，所述第一电极层102，103是阴极层，并且所述第二电极层109是阳极层。
根据本公开的一个示例，如图1所示，所述的OLED器件100还包括：设置在所述第二子电极层103与所述发光层107之间的空穴注入层105和空穴传输层106；以及设置在所述发光层107与所述第二电极层109之间的电子传输层108。所述的OLED器件100还包括：像素界定层120，所述像素界定层120由所述第二子电极层103向上延伸，并且所述像素界定层120位于所述第二电极层109下方，所述像素界定层120限定出各子像素201、202、203的发光区。
根据本公开的一个示例，如图1所示，所述彩膜层104包括与每一像素的各子像素201、202、203一一对应设置的色阻1041、1042、1043，色阻1041、1042、1043中的相邻两色阻之间具有间隙，所述第二子电极层103穿过所述间隙与所述第一子电极层102相互电连接。例如，所述彩膜层104包括与每一像素的各子像素201、202、203一一对应设置的、与每一像素的各子像素201、202、203的颜色分别相同的、具有不同厚度的色阻1041、1042、1043。各子像素201、202、203可以是红色子像素201、 绿色子像素202、蓝色子像素203。所述彩膜层104的所述多个色阻可以包括：红色阻1041、绿色阻1042、蓝色阻1043，并且绿色阻1042的厚度大于蓝色阻1043的厚度且小于红色阻1041的厚度。此外，所述彩膜层104的所述多个色阻也可以包括其它颜色的多个色阻，而各子像素201、202、203可以是其它颜色的子像素。
根据本公开的一个示例，如图1所示，所述第一子电极层102为反射电极层，并且所述第二子电极层103为透明导电薄膜。
根据本公开的一个示例，如图1所示，OLED器件100，包括依次层叠设置的衬底101、作为第一子电极层102的第一阳极层、彩膜层104、作为第二子电极层103的第二阳极层、空穴注入层105、空穴传输层106、发光层107、电子传输层108及作为第二电极层109的阴极层。所述第二子电极层103与电子传输层108之间还形成像素界定层120，用于在发光区域分隔出每一像素的的多个子像素201、202、203，例如红色子像素201、绿色子像素202、蓝色子像素203。
根据本公开的实施例，所述衬底101为玻璃基板。
根据本公开的实施例，如图1所示，所述第一子电极层102为反射阳极，其粘附于所述玻璃基板上并由Ag或ITO薄膜形成，用于反射投射至第一子电极层102的光线。所述第一子电极层102在对应子像素201、202、203中的每两个相邻子像素发光区交界处设有开口。
根据本公开的实施例，如图1所示，所述彩膜层104设于所述第一子电极层102上，并且填充所述第一子电极层102的所述开口。所述彩膜层104还与每一像素的各子像素201、202、203一一对应设置色阻1041、1042、1043，色阻1041、1042、1043中的相邻两色阻之间具有间隙。在本实施方式中，各子像素201、202、203可以是红色子像素201、绿色子像素202、蓝色子像素203，所述彩膜层104设有红色阻1041、绿色阻1042、蓝色阻1043，并且绿色阻1042的厚度大于蓝色阻1043的厚度并小于红色阻1041的厚度。根据本公开的实施例，如图1所示，所述第二子电极层103为透明导电薄膜，可以为ITO薄膜。所述第二子电极层103设于所述彩膜层104上并透过所述彩膜层104上的所述间隙与第一子电极层102相互电 连接。
在本公开的实施例的所述OLED器件100中，由于设置了彩膜层104，可以吸收由外界射入的大部分光线，从而可以避免偏振片的使用；同时，由于不同发光区微腔对应的彩膜层104的色阻1041、1042、1043的厚度不同，可以不必在绿色OLED和红色OLED中设置另外的空穴传输层，降低了OLED器件100的厚度，也提高了产品的良品率。
根据本公开的实施例，如图1所示，所述像素界定层120限定出各个子像素201、202、203的发光区，用于将不同的子像素201、202、203隔离开，避免出现混色现象。在本实施方式中，所述像素界定层120一端连接于第二子电极层103和/或相邻两个OLED的第二子电极层103之间的彩膜层104，另一端延伸至所述电子传输层108。在其他实施方式中，所述像素界定层120还可由第二子电极层延伸至第二电极层以下、空穴传输层以上的其他层。
根据本公开的实施例，如图1所示，所述OLED器件100还包括设于所述发光层107与所述空穴传输层106之间的电子阻挡层110，用于防止电子从发光层107渗透到所述空穴传输层106中，保证电子与空穴仅在发光层107处进行结合，提高发光效率。
根据本公开的实施例，如图1所示，OLED器件100还包括依次设于第二电极层109上第一无机物层130、有机物层140和第二无机物层150。
如图2所示，本公开的实施例还提供了一种OLED器件100的制造方法，该制造方法包括：步骤S101：在衬底101上形成第一子电极层102；步骤S102：在所述第一子电极层102上形成彩膜层104；步骤S103：在所述彩膜层104上形成第二子电极层103，使所述第二子电极层103与所述第一子电极层102相互电连接；步骤S104：形成发光层107；以及步骤S105：形成第二电极层109。所述第一子电极层102和所述第二子电极层103构成第一电极层102，103，所述第一电极层102，103是阳极层和阴极层中的一个，所述第二电极层109是阳极层和阴极层中的另一个，并且所述发光层107设置在所述第一电极层102，103的所述第二子电极层103与所述第二电极层109之间。
根据本公开的实施例，如图1所示，所述第一电极层102，103是阳极层，并且所述第二电极层109是阴极层。作为选择，所述第一电极层102，103是阴极层，并且所述第二电极层109是阳极层。
根据本公开的实施例，参见图1，所述的OLED器件100的制造方法还包括：在形成所述发光层107之前，在所述第二子电极层103上依次形成空穴注入层105和空穴传输层106；以及在形成所述第二电极层109之前，在所述发光层107上形成电子传输层108。例如，所述的OLED器件100的制造方法还包括：在形成所述第二子电极层103之前，在所述彩膜层104上对应每一像素的各子像素201、202、203中相邻两个子像素之间形成间隙，所述第二子电极层103通过所述间隙与所述第一子电极层102相互电连接。所述的OLED器件100的制造方法还可以包括：在形成第二子电极层103之后、形成空穴注入层105之前，在所述第二子电极层103上形成像素界定层120，所述像素界定层120限定出各子像素201、202、203的发光区。
根据本公开的实施例，参见图1，所述彩膜层104包括与每一像素的各子像素201、202、203一一对应设置的、与每一像素的各子像素各子像素201、202、203的颜色分别相同的、具有不同厚度的色阻1041、1042、1043。各子像素201、202、203可以是红色子像素201、绿色子像素202、蓝色子像素203。所述彩膜层104的多个色阻可以包括：红色阻1041、绿色阻1042、蓝色阻1043，并且绿色阻1042的厚度大于蓝色阻1043的厚度且小于红色阻1041的厚度。此外，所述彩膜层104的所述多个色阻也可以包括其它颜色的多个色阻，各子像素201、202、203可以是其它颜色的子像素。
根据本公开的实施例，如图1所示，所述第一子电极层102为反射电极层，并且所述第二子电极层103为透明导电薄膜。
根据本公开的一个示例，参见图1，OLED器件100的制造方法包括以下步骤：
首先，在充当衬底101的玻璃基板上形成Ag或ITO薄膜，构成作为第一子电极层102的第一阳极层(即反射阳极)；
接着，在所述第一子电极层102上设置彩膜层104，并且设置相应的间隙；
继而，在所述彩膜层104上设置ITO薄膜，构成作为第二子电极层103的第二阳极层，并且第二子电极层103透过所述彩膜层104上的所述间隙与所述第一子电极层102相互电连接；
然后，在所述第二子电极层103上设置像素界定层120，所述像素界定层120限定出各个子像素201、202、203的发光区；
最后，依次在所述第二子电极层103上形成空穴注入层105、空穴传输层106、电子阻挡层110、发光层107、电子传输层108、作为第二电极层109的阴极层、第一无机物层130、有机物层140及第二无机物层150。
通过该制造方法生产的OLED器件100，由于不同发光区微腔对应的彩膜层104的色阻1041、1042、1043的厚度不同，可以不必在绿色OLED和红色OLED中设置另外的空穴传输层，可以降低OLED器件100的厚度及提高产品良品率。
本公开的实施例还提供了一种包括上述OLED器件100的显示面板，由于减少了偏振片的使用，显示面板的厚度得以降低，出光效率得以提高。
本公开的实施例的OLED器件中，通过在第一子电极层102(例如反射阳极)上设置彩膜，可以吸收由外界射入的大部分光线，避免器件在没有开启时显示为亮态，可以避免偏振片的使用，从而可以降低器件的厚度；同时，由于不同微腔处的彩膜厚度不同，可以不必在绿色OLED和红色OLED中设置另外的空穴传输层，从而可以避免额外的精细金属掩模版的使用，降低器件的厚度，提高产品的良品率。
以上所述仅是本公开的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开原理的前提下，还可以做出若干变化和修改，这些变化和修改也应视为在本公开的保护范围内。

Claims (18)

  1. 一种OLED器件，包括：
    衬底；
    第一电极层，所述第一电极层包括：第一子电极层，所述第一子电极层设置于所述衬底上；以及第二子电极层，所述第二子电极层与所述第一子电极层相互电连接，所述第一电极层是阳极层和阴极层中的一个；
    彩膜层，所述彩膜层设置于所述第一子电极层上，且所述第二子电极层设置于所述彩膜层上；
    发光层；以及
    第二电极层，所述第二电极层是阳极层和阴极层中的另一个，并且所述发光层设置在所述第一电极层的所述第二子电极层与所述第二电极层之间。
  2. 根据权利要求1所述的OLED器件，其中：
    所述第一电极层是阳极层，并且所述第二电极层是阴极层。
  3. 根据权利要求2所述的OLED器件，还包括：
    设置在所述第二子电极层与所述发光层之间的空穴注入层和空穴传输层；以及
    设置在所述发光层与所述第二电极层之间的电子传输层。
  4. 根据权利要求1所述的OLED器件，其中：
    所述彩膜层包括与每一像素的各子像素一一对应设置的色阻，相邻两色阻之间具有间隙，所述第二子电极层穿过所述间隙与所述第一子电极层相互电连接。
  5. 根据权利要求1所述的OLED器件，其中：
    所述彩膜层包括与每一像素的各子像素一一对应设置的、与每一像素 的各子像素的颜色分别相同的、具有不同厚度的色阻。
  6. 根据权利要求5所述的OLED器件，其中：
    所述彩膜层的所述多个色阻包括：红色阻、绿色阻、蓝色阻，并且绿色阻的厚度大于蓝色阻的厚度且小于红色阻的厚度。
  7. 根据权利要求2所述的OLED器件，还包括：
    设于所述空穴传输层与所述发光层之间的电子阻挡层。
  8. 根据权利要求1或2所述的OLED器件，其中：
    所述第一子电极层为反射电极层，并且所述第二子电极层为透明导电薄膜。
  9. 根据权利要求1或2所述的OLED器件，还包括：
    像素界定层，所述像素界定层由所述第二子电极层向上延伸，并且所述像素界定层位于所述第二电极层下方，所述像素界定层限定出各子像素的发光区。
  10. 一种OLED器件的制造方法，包括：
    在衬底上形成第一子电极层；
    在所述第一子电极层上形成彩膜层；
    在所述彩膜层上形成第二子电极层，使所述第二子电极层与所述第一子电极层相互电连接，所述第一子电极层和所述第二子电极层构成第一电极层，所述第一电极层是阳极层和阴极层中的一个；
    形成发光层；以及
    形成第二电极层，所述第二电极层是阳极层和阴极层中的另一个，并且所述发光层设置在所述第一电极层的所述第二子电极层与所述第二电极层之间。
  11. 根据权利要求10所述的OLED器件的制造方法，其中：
    所述第一电极层是阳极层，并且所述第二电极层是阴极层。
  12. 根据权利要求11所述的OLED器件的制造方法，还包括：
    在形成所述发光层之前，在所述第二子电极层上依次形成空穴注入层和空穴传输层；以及
    在形成所述第二电极层之前，在所述发光层上形成电子传输层。
  13. 根据权利要求12所述的OLED器件的制造方法，还包括：
    在形成所述第二子电极层之前，在所述彩膜层上对应每一像素的相邻两个子像素之间形成间隙，所述第二子电极层通过所述间隙与所述第一子电极层相互电连接。
  14. 根据权利要求12所述的OLED器件的制造方法，还包括：
    在形成第二子电极层之后、形成空穴注入层之前，在所述第二子电极层上形成像素界定层，所述像素界定层限定出各子像素的发光区。
  15. 根据权利要求10所述的OLED器件的制造方法，其中：
    所述彩膜层包括与每一像素的各子像素一一对应设置的、与每一像素的各子像素的颜色分别相同的、具有不同厚度的色阻。
  16. 根据权利要求15所述的OLED器件的制造方法，其中：
    所述彩膜层的多个色阻包括：红色阻、绿色阻、蓝色阻，并且绿色阻的厚度大于蓝色阻的厚度且小于红色阻的厚度。
  17. 根据权利要求10或11所述的OLED器件的制造方法，其中：
    所述第一子电极层为反射电极层，并且所述第二子电极层为透明导电薄膜。
  18. 一种显示面板，包括：
    权利要求1至9中任意一项所述的OLED器件。
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