WO2019171948A1 - Liquid treatment device and liquid treatment method - Google Patents

Liquid treatment device and liquid treatment method Download PDF

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Publication number
WO2019171948A1
WO2019171948A1 PCT/JP2019/006238 JP2019006238W WO2019171948A1 WO 2019171948 A1 WO2019171948 A1 WO 2019171948A1 JP 2019006238 W JP2019006238 W JP 2019006238W WO 2019171948 A1 WO2019171948 A1 WO 2019171948A1
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WO
WIPO (PCT)
Prior art keywords
substrate
wafer
liquid
processing
heat generating
Prior art date
Application number
PCT/JP2019/006238
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French (fr)
Japanese (ja)
Inventor
勝 天井
Original Assignee
東京エレクトロン株式会社
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Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2020504907A priority Critical patent/JP6992154B2/en
Publication of WO2019171948A1 publication Critical patent/WO2019171948A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/36—Coil arrangements

Definitions

  • the disclosed embodiment relates to a liquid processing apparatus and a liquid processing method.
  • a liquid processing apparatus for processing a semiconductor wafer as a substrate (hereinafter referred to as a wafer) with various processing liquids is known.
  • the processing efficiency can be improved by performing liquid processing while controlling the temperature of the wafer at a high temperature (for example, see Patent Document 1).
  • One aspect of the embodiments has been made in view of the above, and an object thereof is to provide a liquid processing apparatus and a liquid processing method capable of efficiently and stably heating a wafer to be liquid processed. .
  • the liquid processing apparatus includes a heat generating member, a substrate holding unit, a processing liquid supply unit, and a coil.
  • the heat generating member is disposed close to the substrate and has a heat insulating member.
  • the substrate holding unit holds the substrate.
  • the processing liquid supply unit supplies a processing liquid onto the substrate held by the substrate holding unit.
  • the coil heats the substrate by induction heating the heat generating member.
  • FIG. 1 is a schematic diagram illustrating a schematic configuration of a substrate processing system according to an embodiment.
  • FIG. 2 is a schematic diagram showing the configuration of the liquid processing unit.
  • FIG. 3 is a cross-sectional view illustrating a configuration of the substrate holding mechanism according to the embodiment.
  • FIG. 4A is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 1 of the embodiment.
  • FIG. 4B is a top view showing the configuration of the coil according to Modification 1 of the embodiment.
  • FIG. 5 is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 2 of the embodiment.
  • FIG. 6 is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 3 of the embodiment.
  • FIG. 1 is a schematic diagram illustrating a schematic configuration of a substrate processing system according to an embodiment.
  • FIG. 2 is a schematic diagram showing the configuration of the liquid processing unit.
  • FIG. 3 is a cross-
  • FIG. 7 is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 4 of the embodiment.
  • FIG. 8A is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 5 of the embodiment.
  • FIG. 8B is a block diagram illustrating a configuration of a wireless temperature sensor according to Modification 5 of the embodiment.
  • FIG. 9 is a flowchart illustrating a processing procedure in the liquid processing according to the embodiment.
  • FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system 1 according to the embodiment.
  • the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
  • the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3.
  • the carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
  • the loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12.
  • the transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside.
  • the substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.
  • the processing station 3 is provided adjacent to the transfer unit 12.
  • the processing station 3 includes a transport unit 15 and a plurality of liquid processing units 16.
  • the plurality of liquid processing units 16 are provided side by side on both sides of the transport unit 15.
  • the transfer unit 15 includes a substrate transfer device 17 inside.
  • the substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer W can be transferred between the delivery unit 14 and the liquid processing unit 16 using a wafer holding mechanism. Transport.
  • the liquid processing unit 16 performs a predetermined liquid processing on the wafer W transferred by the substrate transfer device 17. Details of the liquid processing unit 16 will be described later.
  • the substrate processing system 1 includes a control device 4.
  • the control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19.
  • the storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1.
  • the control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
  • Such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium.
  • Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14.
  • the wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the liquid processing unit 16.
  • the wafer W loaded into the liquid processing unit 16 is processed by the liquid processing unit 16, then unloaded from the liquid processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.
  • FIG. 2 is a schematic diagram showing the configuration of the liquid processing unit 16.
  • the liquid processing unit 16 includes a processing chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, and a recovery cup 50.
  • the processing chamber 20 accommodates the substrate holding mechanism 30, the processing liquid supply unit 40, and the recovery cup 50.
  • An FFU (Fan Filter Unit) 21 is provided on the ceiling of the processing chamber 20.
  • the FFU 21 forms a down flow of the clean gas supplied into the processing chamber 20. Note that the FFU 21 is not essential, and the FFU 21 may not be provided in the processing chamber 20.
  • the substrate holding mechanism 30 includes a substrate holding part 31, a coil 32, a shielding member 33, a shaft 34, and a driving part 35.
  • the substrate holding unit 31 holds the wafer W horizontally.
  • the coil 32 is disposed in the vicinity of the substrate holding unit 31.
  • the shielding member 33 is disposed on the side opposite to the substrate holding portion 31 with respect to the coil 32. Details of the substrate holding portion 31, the coil 32, and the shielding member 33 will be described later.
  • the shaft 34 is a member extending in the vertical direction, and a base end portion thereof is rotatably supported by the drive unit 35, and the substrate holding unit 31 is horizontally supported at the tip end portion.
  • the drive unit 35 rotates the shaft 34 around the vertical axis.
  • the substrate holding mechanism 30 rotates the substrate 34 supported by the shaft 34 by rotating the shaft 34 using the driving unit 35, thereby rotating the wafer W held by the substrate holding unit 31. .
  • the processing liquid supply unit 40 supplies a processing fluid to the wafer W held on the substrate holding unit 31.
  • the processing liquid supply unit 40 includes a nozzle 41 a, an arm 42 that horizontally supports the nozzle 41 a, and a turning lift mechanism 43 that turns and lifts the arm 42.
  • the nozzle 41a is connected to a processing liquid supply source 46a via a valve 44a and a flow rate regulator 45a.
  • a predetermined processing liquid for processing the wafer W is stored in the processing liquid supply source 46a.
  • 2 illustrates an example in which one set of nozzles, processing liquid supply sources, and the like is provided in the processing liquid supply unit 40, but a plurality of sets of nozzles, processing liquid supply sources, and the like may be provided in the processing liquid supply unit 40. .
  • the recovery cup 50 is disposed so as to surround the substrate holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the substrate holding unit 31.
  • a drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the liquid processing unit 16. Further, an exhaust port 52 for exhausting the clean gas supplied from the FFU 21 to the outside of the liquid processing unit 16 is formed at the bottom of the recovery cup 50.
  • FIG. 3 is a cross-sectional view illustrating a configuration of the substrate holding mechanism 30 according to the embodiment.
  • the substrate holding part 31 is substantially disk-shaped, and a suction port (not shown) for sucking the wafer W is provided on the upper surface of the substrate holding part 31.
  • the substrate holding unit 31 can hold the wafer W on the upper surface of the substrate holding unit 31 by suction from the suction port.
  • the substrate holding part 31 has a heat generating member 31a and a heat insulating member 31b inside.
  • the heat generating member 31 a has a substantially disk shape having a diameter slightly smaller than the upper surface of the substrate holding portion 31, and is configured by a member that is induction-heated by a magnetic flux radiated from the coil 32.
  • the heat generating member 31a is, for example, graphite. Note that the heat generating member 31a may be made of other than graphite.
  • the heat insulating member 31b has a substantially disk shape having a diameter substantially equal to that of the heat generating member 31a, and is made of a material having a low thermal conductivity.
  • the heat insulating member 31b is, for example, synthetic resin or ceramics.
  • the heat insulating member 31b may be made of other than synthetic resin or ceramics.
  • the heat generating member 31 a and the heat insulating member 31 b on the substrate holding portion 31, the heat generated in the heat generating member 31 a due to the magnetic flux radiated from the coil 32 escapes to a place other than the wafer W. Can be suppressed. Therefore, according to the embodiment, the wafer W to be liquid-processed can be efficiently and stably heated.
  • the heat insulating member 31b may be disposed on the side opposite to the wafer W with respect to the heat generating member 31a.
  • the heat generating member 31 a may be arranged on the upper side of the substrate holding unit 31
  • the heat insulating member 31 b may be arranged on the lower side of the substrate holding unit 31.
  • the wafer W to be liquid-processed can be heated more efficiently.
  • the substrate holding unit 31 may hold the wafer W so as to be in direct contact with the wafer W. Thereby, the heat generated by the heat generating member 31a of the substrate holding unit 31 can be directly transmitted to the wafer W without using air or the like. Therefore, according to the embodiment, the wafer W to be liquid-processed can be heated more efficiently.
  • the substrate holding unit 31 may hold the wafer W as close as possible to the upper surface of the substrate holding unit 31 (for example, the gap is 0.5 mm or less) to the extent that heat is transmitted even through air or the like.
  • the surface of the substrate holding part 31 may be provided with a corrosion resistant coating. Therefore, when the wafer W is processed with a corrosive processing liquid, it is possible to prevent the heat generating member 31a and the heat insulating member 31b in the substrate holding portion 31 from being corroded.
  • the coil 32 is disposed in the vicinity of the substrate holding unit 31.
  • the coil 32 is disposed close to the lower side of the substrate holding unit 31.
  • the coil 32 is supported by a support unit (not shown) of the substrate holding mechanism 30 and therefore does not rotate together with the substrate holding unit 31.
  • the coil 32 radiates a magnetic flux to the heat generating member 31a of the board holding portion 31 adjacent thereto.
  • maintenance part 31 rotating with the wafer W can be induction-heated.
  • the coil 32 may have a winding axis facing the heat generating member 31a.
  • the winding axis of the coil 32 may be oriented in the vertical direction. Thereby, the coil 32 can radiate
  • the coil 32 may be comprised with the one coil in which the winding axis
  • the coil 32 may have any configuration as long as it can radiate magnetic flux to the entire heating member 31a.
  • the shielding member 33 shields the magnetic flux radiated from the coil 32.
  • the shielding member 33 is disposed around the coil 32 at a location other than between the substrate holding portion 31 and the coil 32.
  • the shielding member 33 is disposed on the lower side of the coil 32 (that is, the other side of the winding axis of the coil 32).
  • the shielding member 33 may rotate with the substrate holding unit 31 or may not rotate with the substrate holding unit 31.
  • FIG. 4A is a cross-sectional view illustrating a configuration of the substrate holding mechanism 30 according to Modification 1 of the embodiment
  • FIG. 4B is a top view illustrating a configuration of the coil 32 according to Modification 1 of the embodiment.
  • the coil 32 of the first modification has a plurality of coils 32a to 32d.
  • Each of the coils 32a to 32d has a pair of electrodes 32a1 to 32d1, and power can be individually supplied from the pair of electrodes 32a1 to 32d1 to the plurality of coils 32a to 32d.
  • a plurality of parts in the wafer W can be individually heated by individually supplying power to the plurality of coils 32a to 32d. Therefore, according to the first modification, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W.
  • the “processing ability” refers to the force of action that the processing liquid exerts on the wafer W itself or a film formed on the wafer W when processing the wafer W.
  • the processing rate includes an etching rate, a cleaning power, a growth rate of a plating film, and the like. Further, depending on the processing content of the wafer W, for example, the etching rate may be controlled to be different in the wafer W surface by setting different temperatures in each part in the wafer W surface.
  • the coils 32a to 32d are arranged along the circumferential direction of the wafer W at positions facing the wafer W, and the coils 32a to 32d are arranged along the radial direction of the wafer W. It is good to arrange them side by side. That is, in the first modification, the coils 32a to 32d are preferably arranged in an arc shape on concentric circles having different diameters.
  • each of the coils 32a to 32d arranged in an arc shape a plurality of coils whose winding axes are directed to the heat generating member 31a are arranged side by side along the arc-shaped region. Good.
  • FIG. 5 is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the second modification of the embodiment.
  • the heat generating member 31a is divided and arranged.
  • the heat generating member 31a of Modification 2 is composed of heat generating members 31a1, 31a2, and 31a3 arranged concentrically with different diameters, and a disk-shaped heat generating member 31a4 arranged on the center side. Composed.
  • FIG. 6 is a cross-sectional view illustrating a configuration of a substrate holding mechanism 30 according to Modification 3 of the embodiment.
  • the heat generating member 31 a is provided at a position corresponding to only a part of the wafer W.
  • the heat generating member 31 a is provided at a position corresponding only to the outer peripheral portion of the wafer W.
  • the portion of the wafer W corresponding to the heat generating member 31a can be selectively heated. Therefore, according to the third modification, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W.
  • the heat generating member 31a is provided at a position corresponding only to the outer peripheral portion of the wafer W, but the portion where the heat generating member 31a is provided is not limited to the position corresponding to the outer peripheral portion of the wafer W.
  • the heat generating member 31a may be disposed at a position corresponding to a portion of the wafer W where the processing capacity of the processing liquid is low.
  • FIG. 7 is a cross-sectional view showing a configuration of a substrate holding mechanism 30 according to Modification 4 of the embodiment.
  • the thickness of the heat generating member 31a differs depending on the part.
  • the outer peripheral part of the heat generating member 31a is thicker than other parts.
  • the wafer W can be heated while the temperature of the heat generating member 31a in the thick part is further increased (heat storage). Therefore, according to the modified example 4, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W.
  • the outer peripheral portion of the heat generating member 31a is thicker than the other portions.
  • the thickened portion is not limited to the outer peripheral portion of the heat generating member 31a, and the processing capability of the processing liquid is low. What is necessary is just to thicken the heat generating member 31a close to the part.
  • FIG. 8A is a cross-sectional view illustrating a configuration of a substrate holding mechanism 30 according to Modification 5 of the embodiment.
  • a wireless temperature sensor 36 is provided on the substrate holding unit 31.
  • the wireless temperature sensor 36 has a function of wirelessly transmitting temperature information in the substrate holding unit 31.
  • a plurality of wireless temperature sensors 36 are provided in the heat generating member 31 a of the substrate holding unit 31.
  • FIG. 8B is a block diagram illustrating a configuration of the wireless temperature sensor 36 according to the fifth modification of the embodiment.
  • the wireless temperature sensor 36 includes a power receiving coil 36a, a rectifying unit 36b, a battery 36c, a temperature sensor 36d, and a transmitting unit 36e.
  • the power receiving coil 36a receives the magnetic flux radiated from the coil 32, converts the magnetic flux into AC power, and sends the converted AC power to the rectifying unit 36b.
  • the rectifying unit 36b converts AC power sent from the power receiving coil 36a into predetermined DC power, and sends the DC power to the battery 36c.
  • the battery 36c stores the DC power sent from the rectifying unit 36b.
  • other wireless systems such as a magnetic resonance system and a radio wave propagation system, may be used regardless of electromagnetic induction wireless charging.
  • the rectifying unit 36b, the temperature sensor 36d, and the transmitting unit 36e operate with the electric power stored in the battery 36c.
  • the temperature sensor 36d is, for example, a sensor on which a thermocouple is mounted, and detects the temperature in the substrate holding unit 31. Then, the temperature sensor 36d sends the detected temperature information to the transmission unit 36e.
  • the transmission unit 36e transmits the temperature information sent from the temperature sensor 36d to the outside.
  • the temperature of the substrate holder 31 on which the wireless temperature sensor 36 is mounted can be monitored. That is, in the fifth modification, the liquid processing can be performed while estimating the temperature of the wafer W based on the temperature information of the substrate holding unit 31 to be monitored.
  • the processing ability of the processing liquid when the processing ability of the processing liquid is different at a plurality of parts on the wafer W, the processing ability of the processing liquid can be further aligned in the plane of the wafer W.
  • FIG. 9 is a flowchart illustrating a processing procedure in the liquid processing according to the embodiment.
  • the wafer W is transferred from the carrier C to the inside of the liquid processing unit 16 via the substrate transfer device 13, the delivery unit 14, and the substrate transfer device 17, and the substrate holding unit 31 of the liquid processing unit 16 The wafer W is held.
  • control unit 18 controls the liquid processing unit 16 to supply the processing liquid to the wafer W held on the substrate holding unit 31 (step S101).
  • the processing for supplying the processing liquid is performed, for example, by operating the processing liquid supply unit 40 and discharging a predetermined processing liquid stored in the processing liquid supply source 46a onto the wafer W through the nozzle 41a. .
  • control unit 18 controls the liquid processing unit 16 to heat the heating member 31a having the heat insulating member 31b by the coil 32 to heat the wafer W (step S102).
  • the step of heating the wafer W is performed by supplying power to the coil 32, for example.
  • the process of heating the wafer W changes the processing capability of the processing liquid supplied to the wafer W.
  • the liquid process for the wafer W according to the embodiment is completed.
  • the substrate holding unit 31 vacuum chucks the wafer W has been described.
  • the substrate holding unit 31 is not limited to the case where the wafer W is vacuum chucked.
  • the wafer W may be electrostatically chucked. .
  • the liquid processing apparatus includes a heat generating member 31a, a substrate holding unit 31, a processing liquid supply unit 40, and a coil 32.
  • the heat generating member 31a is disposed close to the substrate (wafer W) and has a heat insulating member 31b.
  • the substrate holding unit 31 holds a substrate (wafer W).
  • the processing liquid supply unit 40 supplies the processing liquid onto the substrate (wafer W) held by the substrate holding unit 31.
  • the coil 32 heats the substrate (wafer W) by induction heating the heat generating member 31a. Thereby, the wafer W to be liquid-treated can be heated efficiently and stably.
  • the heat insulating member 31b is disposed on the opposite side of the heat generating member 31a from the substrate (wafer W). Thereby, the wafer W to be liquid-treated can be heated more efficiently.
  • the heat generating member 31a is divided and arranged. Therefore, when the processing capability of the processing liquid is different at a plurality of portions on the wafer W, the processing capability of the processing liquid can be made uniform in the plane of the wafer W.
  • the heat generating member 31a is provided at a position corresponding to only a part of the wafer W.
  • a plurality of coils 32a to 32d are provided, and the plurality of coils 32a to 32d can individually heat a plurality of portions of the substrate (wafer W).
  • the processing capability of the processing liquid is different at a plurality of portions on the wafer W, the processing capability of the processing liquid can be made uniform in the plane of the wafer W.
  • the in-plane etching amount can be changed by intentionally changing the processing capability.
  • the coils 32a to 32d are arranged along the circumferential direction of the substrate (wafer W) at positions facing the substrate (wafer W), and the plurality of coils 32a to 32d are These are arranged side by side along the radial direction of the substrate (wafer W).
  • the processing capability of the processing liquid which is different in the circumferential direction can be made uniform in the plane of the wafer W.
  • the in-plane etching amount can be changed by intentionally changing the processing capability.
  • the liquid processing apparatus further includes a shielding member 33 that shields magnetic flux leaking from the coil 32 to a portion other than the heat generating member 31a.
  • a shielding member 33 that shields magnetic flux leaking from the coil 32 to a portion other than the heat generating member 31a.
  • the substrate holding unit 31 operates with electric power converted from the magnetic flux radiated from the coil 32 to detect the temperature, and wirelessly transmits the detected temperature information wirelessly.
  • a sensor 36 is provided.
  • the substrate holding unit 31 holds the substrate (wafer W) so as to be in direct contact with the substrate (wafer W). Thereby, the wafer W to be liquid-treated can be heated more efficiently.
  • the process liquid is supplied to the substrate (wafer W) held by the substrate holding unit 31 (step S101), and the heating member 31a having the heat insulating member 31b is guided by the coil 32.
  • Heating (step S102) a step of heating the substrate (wafer W).
  • the process (step S102) of heating changes the processing capability of the process liquid supplied to the board
  • the substrate holding unit 31 holds the back surface of the wafer W.
  • the substrate holding unit 31 does not necessarily hold the back surface of the wafer W, and may hold the edge of the wafer W.
  • maintenance part 31, the heat generating member 31a, and the heat insulation member 31b may be a different body.
  • the heat generating member 31a and the heat insulating member 31b may be integrated.
  • Substrate Processing System 16 Liquid Processing Unit 18 Control Unit 30 Substrate Holding Mechanism 31 Substrate Holding Unit 31a Heating Member 31b Heat Insulating Member 32, 32a to 32d Coil 33 Shielding Member 36 Wireless Temperature Sensor 40 Processing Liquid Supply Unit

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

The liquid treatment device according to the embodiments comprises a heat generation member (31a), a substrate holding part (31), a treatment liquid supply part (40), and a coil (32). The heat generation member (31a) is arranged near a substrate and has a heat insulation member (31b). The substrate holding part (31) holds the substrate. The treatment liquid supply part (40) supplies a treatment liquid to the substrate as held by the substrate holding part (31). The coil (32) heats the substrate by heating the heat generation member (31a) by induction.

Description

液処理装置および液処理方法Liquid processing apparatus and liquid processing method
　開示の実施形態は、液処理装置および液処理方法に関する。 The disclosed embodiment relates to a liquid processing apparatus and a liquid processing method.
　従来、基板である半導体ウェハ（以下、ウェハと呼称する。）を様々な処理液で処理する液処理装置が知られている。かかる液処理装置では、ウェハを高温で温度制御しながら液処理を行うことにより、処理効率を向上させることができる（たとえば、特許文献１参照）。 Conventionally, a liquid processing apparatus for processing a semiconductor wafer as a substrate (hereinafter referred to as a wafer) with various processing liquids is known. In such a liquid processing apparatus, the processing efficiency can be improved by performing liquid processing while controlling the temperature of the wafer at a high temperature (for example, see Patent Document 1).
特開２０１７－１１２３６４号公報JP 2017-112364 A
　しかしながら、従来の液処理装置では、ウェハを効率的かつ安定的に加熱することが困難であった。 However, with the conventional liquid processing apparatus, it has been difficult to heat the wafer efficiently and stably.
　実施形態の一態様は、上記に鑑みてなされたものであって、液処理されるウェハを効率的かつ安定的に加熱することができる液処理装置および液処理方法を提供することを目的とする。 One aspect of the embodiments has been made in view of the above, and an object thereof is to provide a liquid processing apparatus and a liquid processing method capable of efficiently and stably heating a wafer to be liquid processed. .
　実施形態の一態様に係る液処理装置は、発熱部材と、基板保持部と、処理液供給部と、コイルとを備える。前記発熱部材は、基板に近接して配置され断熱部材を有する。前記基板保持部は、前記基板を保持する。前記処理液供給部は、前記基板保持部に保持された前記基板上に処理液を供給する。前記コイルは、前記発熱部材を誘導加熱することにより前記基板を加熱する。 The liquid processing apparatus according to an aspect of the embodiment includes a heat generating member, a substrate holding unit, a processing liquid supply unit, and a coil. The heat generating member is disposed close to the substrate and has a heat insulating member. The substrate holding unit holds the substrate. The processing liquid supply unit supplies a processing liquid onto the substrate held by the substrate holding unit. The coil heats the substrate by induction heating the heat generating member.
　実施形態の一態様によれば、液処理されるウェハを効率的かつ安定的に加熱することができる。 According to one aspect of the embodiment, it is possible to efficiently and stably heat a wafer to be liquid processed.
図１は、実施形態に係る基板処理システムの概略構成を示す模式図である。FIG. 1 is a schematic diagram illustrating a schematic configuration of a substrate processing system according to an embodiment. 図２は、液処理ユニットの構成を示す模式図である。FIG. 2 is a schematic diagram showing the configuration of the liquid processing unit. 図３は、実施形態に係る基板保持機構の構成を示す断面図である。FIG. 3 is a cross-sectional view illustrating a configuration of the substrate holding mechanism according to the embodiment. 図４Ａは、実施形態の変形例１に係る基板保持機構の構成を示す断面図である。FIG. 4A is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 1 of the embodiment. 図４Ｂは、実施形態の変形例１に係るコイルの構成を示す上面図である。FIG. 4B is a top view showing the configuration of the coil according to Modification 1 of the embodiment. 図５は、実施形態の変形例２に係る基板保持機構の構成を示す断面図である。FIG. 5 is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 2 of the embodiment. 図６は、実施形態の変形例３に係る基板保持機構の構成を示す断面図である。FIG. 6 is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 3 of the embodiment. 図７は、実施形態の変形例４に係る基板保持機構の構成を示す断面図である。FIG. 7 is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 4 of the embodiment. 図８Ａは、実施形態の変形例５に係る基板保持機構の構成を示す断面図である。FIG. 8A is a cross-sectional view illustrating a configuration of a substrate holding mechanism according to Modification 5 of the embodiment. 図８Ｂは、実施形態の変形例５に係るワイヤレス温度センサの構成を示すブロック図である。FIG. 8B is a block diagram illustrating a configuration of a wireless temperature sensor according to Modification 5 of the embodiment. 図９は、実施形態に係る液処理における処理手順を示すフローチャートである。FIG. 9 is a flowchart illustrating a processing procedure in the liquid processing according to the embodiment.
　以下、添付図面を参照して、本願の開示する液処理装置および液処理方法の実施形態を詳細に説明する。なお、以下に示す実施形態によりこの発明が限定されるものではない。 Hereinafter, embodiments of a liquid processing apparatus and a liquid processing method disclosed in the present application will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited by embodiment shown below.
＜基板処理システムの概要＞
　最初に、図１を参照しながら、実施形態に係る基板処理システム１の概略構成について説明する。図１は、実施形態に係る基板処理システム１の概略構成を示す図である。以下では、位置関係を明確にするために、互いに直交するＸ軸、Ｙ軸およびＺ軸を規定し、Ｚ軸正方向を鉛直上向き方向とする。 <Outline of substrate processing system>
First, a schematic configuration of the substrate processing system 1 according to the embodiment will be described with reference to FIG. FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system 1 according to the embodiment. In the following, in order to clarify the positional relationship, the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
　図１に示すように、基板処理システム１は、搬入出ステーション２と、処理ステーション３とを備える。搬入出ステーション２と処理ステーション３とは隣接して設けられる。 As shown in FIG. 1, the substrate processing system 1 includes a carry-in / out station 2 and a processing station 3. The carry-in / out station 2 and the processing station 3 are provided adjacent to each other.
　搬入出ステーション２は、キャリア載置部１１と、搬送部１２とを備える。キャリア載置部１１には、複数枚の基板、実施形態では半導体ウェハＷ（以下、ウェハＷと呼称する。）を水平状態で収容する複数のキャリアＣが載置される。 The loading / unloading station 2 includes a carrier placement unit 11 and a conveyance unit 12. A plurality of carriers C that accommodate a plurality of substrates, in the embodiment, semiconductor wafers W (hereinafter referred to as wafers W) in a horizontal state, are placed on the carrier placement unit 11.
　搬送部１２は、キャリア載置部１１に隣接して設けられ、内部に基板搬送装置１３と、受渡部１４とを備える。基板搬送装置１３は、ウェハＷを保持するウェハ保持機構を備える。また、基板搬送装置１３は、水平方向および鉛直方向への移動ならびに鉛直軸を中心とする旋回が可能であり、ウェハ保持機構を用いてキャリアＣと受渡部１４との間でウェハＷの搬送を行う。 The transfer unit 12 is provided adjacent to the carrier placement unit 11 and includes a substrate transfer device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism. Do.
　処理ステーション３は、搬送部１２に隣接して設けられる。処理ステーション３は、搬送部１５と、複数の液処理ユニット１６とを備える。複数の液処理ユニット１６は、搬送部１５の両側に並べて設けられる。 The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transport unit 15 and a plurality of liquid processing units 16. The plurality of liquid processing units 16 are provided side by side on both sides of the transport unit 15.
　搬送部１５は、内部に基板搬送装置１７を備える。基板搬送装置１７は、ウェハＷを保持するウェハ保持機構を備える。また、基板搬送装置１７は、水平方向および鉛直方向への移動ならびに鉛直軸を中心とする旋回が可能であり、ウェハ保持機構を用いて受渡部１４と液処理ユニット１６との間でウェハＷの搬送を行う。 The transfer unit 15 includes a substrate transfer device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer W can be transferred between the delivery unit 14 and the liquid processing unit 16 using a wafer holding mechanism. Transport.
　液処理ユニット１６は、基板搬送装置１７によって搬送されるウェハＷに対して所定の液処理を行う。液処理ユニット１６の詳細については後述する。 The liquid processing unit 16 performs a predetermined liquid processing on the wafer W transferred by the substrate transfer device 17. Details of the liquid processing unit 16 will be described later.
　また、基板処理システム１は、制御装置４を備える。制御装置４は、たとえばコンピュータであり、制御部１８と記憶部１９とを備える。記憶部１９には、基板処理システム１において実行される各種の処理を制御するプログラムが格納される。制御部１８は、記憶部１９に記憶されたプログラムを読み出して実行することによって基板処理システム１の動作を制御する。 Further, the substrate processing system 1 includes a control device 4. The control device 4 is a computer, for example, and includes a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19.
　なお、かかるプログラムは、コンピュータによって読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御装置４の記憶部１９にインストールされたものであってもよい。コンピュータによって読み取り可能な記憶媒体としては、たとえばハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカードなどがある。 Note that such a program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
　上記のように構成された基板処理システム１では、まず、搬入出ステーション２の基板搬送装置１３が、キャリア載置部１１に載置されたキャリアＣからウェハＷを取り出し、取り出したウェハＷを受渡部１４に載置する。受渡部１４に載置されたウェハＷは、処理ステーション３の基板搬送装置１７によって受渡部１４から取り出されて、液処理ユニット１６へ搬入される。 In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and receives the taken-out wafer W. Place on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the liquid processing unit 16.
　液処理ユニット１６へ搬入されたウェハＷは、液処理ユニット１６によって処理された後、基板搬送装置１７によって液処理ユニット１６から搬出されて、受渡部１４に載置される。そして、受渡部１４に載置された処理済のウェハＷは、基板搬送装置１３によってキャリア載置部１１のキャリアＣへ戻される。 The wafer W loaded into the liquid processing unit 16 is processed by the liquid processing unit 16, then unloaded from the liquid processing unit 16 by the substrate transfer device 17, and placed on the delivery unit 14. Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.
＜液処理ユニットの概要＞
　次に、液処理ユニット１６の概要について、図２を参照しながら説明する。図２は、液処理ユニット１６の構成を示す模式図である。図２に示すように、液処理ユニット１６は、処理室２０と、基板保持機構３０と、処理液供給部４０と、回収カップ５０とを備える。 <Outline of liquid treatment unit>
Next, an outline of the liquid processing unit 16 will be described with reference to FIG. FIG. 2 is a schematic diagram showing the configuration of the liquid processing unit 16. As shown in FIG. 2, the liquid processing unit 16 includes a processing chamber 20, a substrate holding mechanism 30, a processing liquid supply unit 40, and a recovery cup 50.
　処理室２０は、基板保持機構３０と処理液供給部４０と回収カップ５０とを収容する。処理室２０の天井部には、ＦＦＵ（Fan  Filter  Unit）２１が設けられる。ＦＦＵ２１は、処理室２０内に供給される清浄ガスのダウンフローを形成する。なお、ＦＦＵ２１は必須ではなく、処理室２０にＦＦＵ２１を設けなくてもよい。 The processing chamber 20 accommodates the substrate holding mechanism 30, the processing liquid supply unit 40, and the recovery cup 50. An FFU (Fan Filter Unit) 21 is provided on the ceiling of the processing chamber 20. The FFU 21 forms a down flow of the clean gas supplied into the processing chamber 20. Note that the FFU 21 is not essential, and the FFU 21 may not be provided in the processing chamber 20.
　基板保持機構３０は、基板保持部３１と、コイル３２と、遮蔽部材３３と、シャフト３４と、駆動部３５とを備える。基板保持部３１は、ウェハＷを水平に保持する。コイル３２は、基板保持部３１に近接して配置される。遮蔽部材３３は、コイル３２に対して基板保持部３１とは反対側に配置される。かかる基板保持部３１、コイル３２および遮蔽部材３３の詳細については後述する。 The substrate holding mechanism 30 includes a substrate holding part 31, a coil 32, a shielding member 33, a shaft 34, and a driving part 35. The substrate holding unit 31 holds the wafer W horizontally. The coil 32 is disposed in the vicinity of the substrate holding unit 31. The shielding member 33 is disposed on the side opposite to the substrate holding portion 31 with respect to the coil 32. Details of the substrate holding portion 31, the coil 32, and the shielding member 33 will be described later.
　シャフト３４は、鉛直方向に延在する部材であり、基端部が駆動部３５によって回転可能に支持され、先端部において基板保持部３１を水平に支持する。駆動部３５は、シャフト３４を鉛直軸まわりに回転させる。 The shaft 34 is a member extending in the vertical direction, and a base end portion thereof is rotatably supported by the drive unit 35, and the substrate holding unit 31 is horizontally supported at the tip end portion. The drive unit 35 rotates the shaft 34 around the vertical axis.
　かかる基板保持機構３０は、駆動部３５を用いてシャフト３４を回転させることによってシャフト３４に支持された基板保持部３１を回転させ、これにより、基板保持部３１に保持されたウェハＷを回転させる。 The substrate holding mechanism 30 rotates the substrate 34 supported by the shaft 34 by rotating the shaft 34 using the driving unit 35, thereby rotating the wafer W held by the substrate holding unit 31. .
　処理液供給部４０は、基板保持部３１に保持されたウェハＷに対して処理流体を供給する。処理液供給部４０は、ノズル４１ａと、かかるノズル４１ａを水平に支持するアーム４２と、アーム４２を旋回および昇降させる旋回昇降機構４３とを備える。 The processing liquid supply unit 40 supplies a processing fluid to the wafer W held on the substrate holding unit 31. The processing liquid supply unit 40 includes a nozzle 41 a, an arm 42 that horizontally supports the nozzle 41 a, and a turning lift mechanism 43 that turns and lifts the arm 42.
　ノズル４１ａは、バルブ４４ａと流量調整器４５ａとを介して処理液供給源４６ａに接続される。処理液供給源４６ａには、ウェハＷを処理する所定の処理液が貯蔵される。なお、図２では、処理液供給部４０にノズルや処理液供給源などを１セット設けた例について示したが、処理液供給部４０にノズルや処理液供給源などを複数セット設けてもよい。 The nozzle 41a is connected to a processing liquid supply source 46a via a valve 44a and a flow rate regulator 45a. A predetermined processing liquid for processing the wafer W is stored in the processing liquid supply source 46a. 2 illustrates an example in which one set of nozzles, processing liquid supply sources, and the like is provided in the processing liquid supply unit 40, but a plurality of sets of nozzles, processing liquid supply sources, and the like may be provided in the processing liquid supply unit 40. .
　回収カップ５０は、基板保持部３１を取り囲むように配置され、基板保持部３１の回転によってウェハＷから飛散する処理液を捕集する。回収カップ５０の底部には、排液口５１が形成されており、回収カップ５０によって捕集された処理液は、かかる排液口５１から液処理ユニット１６の外部へ排出される。また、回収カップ５０の底部には、ＦＦＵ２１から供給される清浄ガスを液処理ユニット１６の外部へ排気する排気口５２が形成される。 The recovery cup 50 is disposed so as to surround the substrate holding unit 31, and collects the processing liquid scattered from the wafer W by the rotation of the substrate holding unit 31. A drain port 51 is formed at the bottom of the recovery cup 50, and the processing liquid collected by the recovery cup 50 is discharged from the drain port 51 to the outside of the liquid processing unit 16. Further, an exhaust port 52 for exhausting the clean gas supplied from the FFU 21 to the outside of the liquid processing unit 16 is formed at the bottom of the recovery cup 50.
＜基板保持機構の構成＞
　次に、基板保持機構３０の具体的な構成について、図３を参照しながら説明する。図３は、実施形態に係る基板保持機構３０の構成を示す断面図である。 <Configuration of substrate holding mechanism>
Next, a specific configuration of the substrate holding mechanism 30 will be described with reference to FIG. FIG. 3 is a cross-sectional view illustrating a configuration of the substrate holding mechanism 30 according to the embodiment.
　基板保持部３１は、略円板状であり、基板保持部３１の上面には、ウェハＷを吸引する図示しない吸引口が設けられる。そして、基板保持部３１は、かかる吸引口からの吸引により、ウェハＷを基板保持部３１の上面に保持することができる。 The substrate holding part 31 is substantially disk-shaped, and a suction port (not shown) for sucking the wafer W is provided on the upper surface of the substrate holding part 31. The substrate holding unit 31 can hold the wafer W on the upper surface of the substrate holding unit 31 by suction from the suction port.
　基板保持部３１は、内部に発熱部材３１ａと断熱部材３１ｂとを有する。発熱部材３１ａは、基板保持部３１の上面よりわずかに小さい径を有する略円板状であり、コイル３２から放射される磁束によって誘導加熱される部材で構成される。発熱部材３１ａは、たとえば、グラファイトである。なお、発熱部材３１ａはグラファイト以外で構成されていてもよい。 The substrate holding part 31 has a heat generating member 31a and a heat insulating member 31b inside. The heat generating member 31 a has a substantially disk shape having a diameter slightly smaller than the upper surface of the substrate holding portion 31, and is configured by a member that is induction-heated by a magnetic flux radiated from the coil 32. The heat generating member 31a is, for example, graphite. Note that the heat generating member 31a may be made of other than graphite.
　断熱部材３１ｂは、発熱部材３１ａと略等しい径を有する略円板状であり、熱伝導率が小さい材料で構成される。断熱部材３１ｂは、たとえば、合成樹脂やセラミックスなどである。なお、断熱部材３１ｂは合成樹脂やセラミックス以外で構成されていてもよい。 The heat insulating member 31b has a substantially disk shape having a diameter substantially equal to that of the heat generating member 31a, and is made of a material having a low thermal conductivity. The heat insulating member 31b is, for example, synthetic resin or ceramics. The heat insulating member 31b may be made of other than synthetic resin or ceramics.
　このように、基板保持部３１に発熱部材３１ａと断熱部材３１ｂとを設けることにより、コイル３２から放射される磁束に起因して発熱部材３１ａで生じた熱が、ウェハＷ以外の箇所に逃げることを抑制することができる。したがって、実施形態によれば、液処理されるウェハＷを効率的かつ安定的に加熱することができる。 As described above, by providing the heat generating member 31 a and the heat insulating member 31 b on the substrate holding portion 31, the heat generated in the heat generating member 31 a due to the magnetic flux radiated from the coil 32 escapes to a place other than the wafer W. Can be suppressed. Therefore, according to the embodiment, the wafer W to be liquid-processed can be efficiently and stably heated.
　実施形態では、断熱部材３１ｂが、発熱部材３１ａに対してウェハＷとは反対側に配置されるとよい。たとえば、ウェハＷが基板保持部３１の上面に保持される場合、発熱部材３１ａは基板保持部３１の上側に配置され、断熱部材３１ｂは基板保持部３１の下側に配置されるとよい。 In the embodiment, the heat insulating member 31b may be disposed on the side opposite to the wafer W with respect to the heat generating member 31a. For example, when the wafer W is held on the upper surface of the substrate holding unit 31, the heat generating member 31 a may be arranged on the upper side of the substrate holding unit 31, and the heat insulating member 31 b may be arranged on the lower side of the substrate holding unit 31.
　これにより、発熱部材３１ａにおけるウェハＷとは反対側（すなわち、下側）に熱が逃げることを抑制することができる。したがって、実施形態によれば、液処理されるウェハＷをさらに効率的に加熱することができる。 Thereby, it is possible to prevent the heat from escaping to the side opposite to the wafer W (that is, the lower side) in the heat generating member 31a. Therefore, according to the embodiment, the wafer W to be liquid-processed can be heated more efficiently.
　また、実施形態では、基板保持部３１が、ウェハＷと直接接触するようにウェハＷを保持するとよい。これにより、基板保持部３１の発熱部材３１ａで生じた熱を、空気などを介することなく直接ウェハＷに伝えることができる。したがって、実施形態によれば、液処理されるウェハＷをさらに効率的に加熱することができる。 In the embodiment, the substrate holding unit 31 may hold the wafer W so as to be in direct contact with the wafer W. Thereby, the heat generated by the heat generating member 31a of the substrate holding unit 31 can be directly transmitted to the wafer W without using air or the like. Therefore, according to the embodiment, the wafer W to be liquid-processed can be heated more efficiently.
　なお、実施形態では、ウェハＷと直接接触するように基板保持部３１がウェハＷを保持する例について示したが、必ずしもウェハＷと直接接触するように保持しなくともよい。たとえば、基板保持部３１は、空気などを介したとしても熱が伝わる程度に基板保持部３１の上面に近接させて（たとえば、ギャップが０．５ｍｍ以下）、ウェハＷを保持してもよい。 In the embodiment, an example in which the substrate holding unit 31 holds the wafer W so as to be in direct contact with the wafer W has been described, but it is not always necessary to hold the wafer W so as to be in direct contact. For example, the substrate holding unit 31 may hold the wafer W as close as possible to the upper surface of the substrate holding unit 31 (for example, the gap is 0.5 mm or less) to the extent that heat is transmitted even through air or the like.
　また、実施形態では、基板保持部３１の表面に耐食性コーティングが施されているとよい。これにより、腐食性のある処理液でウェハＷを処理する際に、基板保持部３１内の発熱部材３１ａや断熱部材３１ｂが腐食することを抑制することができる。 In the embodiment, the surface of the substrate holding part 31 may be provided with a corrosion resistant coating. Thereby, when the wafer W is processed with a corrosive processing liquid, it is possible to prevent the heat generating member 31a and the heat insulating member 31b in the substrate holding portion 31 from being corroded.
　基板保持機構３０のその他の部位についての説明を続ける。コイル３２は、基板保持部３１に近接して配置される。たとえば、コイル３２は、基板保持部３１の下側に近接して配置される。なお、コイル３２は、基板保持機構３０の図示しない支持部により支持されることから、基板保持部３１とともに回転はしない。 The explanation of other parts of the substrate holding mechanism 30 will be continued. The coil 32 is disposed in the vicinity of the substrate holding unit 31. For example, the coil 32 is disposed close to the lower side of the substrate holding unit 31. The coil 32 is supported by a support unit (not shown) of the substrate holding mechanism 30 and therefore does not rotate together with the substrate holding unit 31.
　そして、コイル３２は、近接する基板保持部３１の発熱部材３１ａに対して磁束を放射する。これにより、実施形態では、ウェハＷとともに回転する基板保持部３１の発熱部材３１ａを誘導加熱することができる。 The coil 32 radiates a magnetic flux to the heat generating member 31a of the board holding portion 31 adjacent thereto. Thereby, in embodiment, the heat generating member 31a of the board | substrate holding | maintenance part 31 rotating with the wafer W can be induction-heated.
　コイル３２は、巻回軸が発熱部材３１ａに向いているとよい。たとえば、実施形態では、コイル３２の巻回軸が鉛直方向を向いているとよい。これにより、コイル３２は、発熱部材３１ａに対して効率よく磁束を放射することができる。更に、コイル３２の間に磁束遮断を入れてもよい。 The coil 32 may have a winding axis facing the heat generating member 31a. For example, in the embodiment, the winding axis of the coil 32 may be oriented in the vertical direction. Thereby, the coil 32 can radiate | emit magnetic flux efficiently with respect to the heat generating member 31a. Further, a magnetic flux block may be inserted between the coils 32.
　なお、コイル３２は、巻回軸が発熱部材３１ａに向いた１つのコイルで構成されていてもよく、巻回軸が発熱部材３１ａに向いた複数のコイルが並んで構成されていてもよい。コイル３２は、発熱部材３１ａの全体に磁束を放射することができれば、どのような構成であってもよい。 In addition, the coil 32 may be comprised with the one coil in which the winding axis | shaft was suitable for the heat generating member 31a, and the some coil in which the winding axis was facing the heat generating member 31a may be comprised along with it. The coil 32 may have any configuration as long as it can radiate magnetic flux to the entire heating member 31a.
　遮蔽部材３３は、コイル３２から放射される磁束を遮蔽する。遮蔽部材３３は、コイル３２の周辺において、基板保持部３１とコイル３２との間以外の箇所に配置される。たとえば、遮蔽部材３３は、コイル３２の下側（すなわち、コイル３２における巻回軸の他方側）に配置される。 The shielding member 33 shields the magnetic flux radiated from the coil 32. The shielding member 33 is disposed around the coil 32 at a location other than between the substrate holding portion 31 and the coil 32. For example, the shielding member 33 is disposed on the lower side of the coil 32 (that is, the other side of the winding axis of the coil 32).
　これにより、コイル３２から放射される磁束が液処理ユニット１６内の他の機器に干渉することを抑制することができる。したがって、実施形態によれば、液処理されるウェハＷをさらに安定的に加熱することができる。なお、遮蔽部材３３は、基板保持部３１とともに回転してもよく、基板保持部３１とともに回転しなくてもよい。 Thereby, it is possible to suppress the magnetic flux radiated from the coil 32 from interfering with other devices in the liquid processing unit 16. Therefore, according to the embodiment, the wafer W to be liquid-processed can be heated more stably. The shielding member 33 may rotate with the substrate holding unit 31 or may not rotate with the substrate holding unit 31.
＜変形例＞
　つづいて、上述の実施形態における各種変形例について説明する。図４Ａは、実施形態の変形例１に係る基板保持機構３０の構成を示す断面図であり、図４Ｂは、実施形態の変形例１に係るコイル３２の構成を示す上面図である。 <Modification>
Subsequently, various modifications of the above-described embodiment will be described. 4A is a cross-sectional view illustrating a configuration of the substrate holding mechanism 30 according to Modification 1 of the embodiment, and FIG. 4B is a top view illustrating a configuration of the coil 32 according to Modification 1 of the embodiment.
　図４Ａおよび図４Ｂに示すように、変形例１のコイル３２は、複数のコイル３２ａ～３２ｄを有する。かかるコイル３２ａ～３２ｄは、それぞれ一対の電極３２ａ１～３２ｄ１を有し、かかる一対の電極３２ａ１～３２ｄ１から複数のコイル３２ａ～３２ｄに個別に電力を供給することができる。 As shown in FIGS. 4A and 4B, the coil 32 of the first modification has a plurality of coils 32a to 32d. Each of the coils 32a to 32d has a pair of electrodes 32a1 to 32d1, and power can be individually supplied from the pair of electrodes 32a1 to 32d1 to the plurality of coils 32a to 32d.
　そして、実施形態では、複数のコイル３２ａ～３２ｄに個別に電力を供給することにより、ウェハＷにおける複数の部位を個別に加熱することができる。したがって、変形例１によれば、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。ここで、「処理能力」とは、ウェハＷの処理にあたって、処理液がウェハＷ自体やウェハＷに形成された膜に及ぼす作用の力をいう。例えば、エッチングレートや洗浄力、めっき膜等の成長速度などが、この処理能力に含まれる。また、ウェハＷの処理内容に応じて、例えばウェハＷ面内の各部位で異なる温度にして、ウェハＷ面内でエッチングレートを異なるように制御してもよい。 In the embodiment, a plurality of parts in the wafer W can be individually heated by individually supplying power to the plurality of coils 32a to 32d. Therefore, according to the first modification, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W. Here, the “processing ability” refers to the force of action that the processing liquid exerts on the wafer W itself or a film formed on the wafer W when processing the wafer W. For example, the processing rate includes an etching rate, a cleaning power, a growth rate of a plating film, and the like. Further, depending on the processing content of the wafer W, for example, the etching rate may be controlled to be different in the wafer W surface by setting different temperatures in each part in the wafer W surface.
　図４Ａおよび図４Ｂに示すように、変形例１では、コイル３２ａ～３２ｄがそれぞれウェハＷと向かい合う位置にウェハＷの周方向に沿って配置され、コイル３２ａ～３２ｄがウェハＷの径方向に沿って並んで配置されているとよい。すなわち、変形例１では、コイル３２ａ～３２ｄがそれぞれ異なる径を有する同心円上で円弧状に配置されているとよい。 As shown in FIGS. 4A and 4B, in Modification 1, the coils 32a to 32d are arranged along the circumferential direction of the wafer W at positions facing the wafer W, and the coils 32a to 32d are arranged along the radial direction of the wafer W. It is good to arrange them side by side. That is, in the first modification, the coils 32a to 32d are preferably arranged in an arc shape on concentric circles having different diameters.
　また、変形例１では、円弧状に配置されるコイル３２ａ～３２ｄのそれぞれにおいて、巻回軸が発熱部材３１ａに向いた複数のコイルがかかる円弧状の領域に沿って並んで配置されているとよい。 In the first modification, in each of the coils 32a to 32d arranged in an arc shape, a plurality of coils whose winding axes are directed to the heat generating member 31a are arranged side by side along the arc-shaped region. Good.
　ここで、ウェハＷを回転させながら行う液処理では、ウェハＷの周方向で処理液の処理能力が異なる場合が多く見られるが、コイル３２ａ～３２ｄを上述のように配置することにより、周方向で異なる処理液の処理能力をウェハＷの面内で揃えることができる。 Here, in the liquid processing performed while rotating the wafer W, there are many cases where the processing capability of the processing liquid differs in the circumferential direction of the wafer W. By arranging the coils 32a to 32d as described above, the circumferential direction Thus, the processing capacities of different processing liquids can be made uniform in the plane of the wafer W.
　図５は、実施形態の変形例２に係る基板保持機構３０の構成を示す断面図である。図５に示すように、変形例２では、発熱部材３１ａが分割して配置される。たとえば、変形例２の発熱部材３１ａは、それぞれ異なる径を有する同心円上で円弧状に配置される発熱部材３１ａ１、３１ａ２、３１ａ３と、中心部側に配置される円板状の発熱部材３１ａ４とで構成される。 FIG. 5 is a cross-sectional view showing the configuration of the substrate holding mechanism 30 according to the second modification of the embodiment. As shown in FIG. 5, in Modification 2, the heat generating member 31a is divided and arranged. For example, the heat generating member 31a of Modification 2 is composed of heat generating members 31a1, 31a2, and 31a3 arranged concentrically with different diameters, and a disk-shaped heat generating member 31a4 arranged on the center side. Composed.
　このように、発熱部材３１ａを分割して、各発熱部材３１ａの蓄熱状態に違いを持たせることにより、ウェハＷにおける複数の部位をそれぞれ個別の温度で加熱することができる。したがって、変形例２によれば、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。 In this way, by dividing the heat generating member 31a and making the heat storage state of each heat generating member 31a different, it is possible to heat a plurality of parts of the wafer W at individual temperatures. Therefore, according to the second modification, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W.
　図６は、実施形態の変形例３に係る基板保持機構３０の構成を示す断面図である。図６に示すように、変形例３では、ウェハＷの一部にのみ対応する位置に発熱部材３１ａが設けられる。たとえば、変形例３では、ウェハＷの外周部にのみ対応する位置に発熱部材３１ａが設けられる。 FIG. 6 is a cross-sectional view illustrating a configuration of a substrate holding mechanism 30 according to Modification 3 of the embodiment. As shown in FIG. 6, in Modification 3, the heat generating member 31 a is provided at a position corresponding to only a part of the wafer W. For example, in Modification 3, the heat generating member 31 a is provided at a position corresponding only to the outer peripheral portion of the wafer W.
　このように、ウェハＷの一部にのみ対応する位置に発熱部材３１ａを設けることにより、発熱部材３１ａに対応するウェハＷの部分を選択的に加熱することができる。したがって、変形例３によれば、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。 Thus, by providing the heat generating member 31a at a position corresponding to only a part of the wafer W, the portion of the wafer W corresponding to the heat generating member 31a can be selectively heated. Therefore, according to the third modification, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W.
　なお、変形例３ではウェハＷの外周部にのみ対応する位置に発熱部材３１ａが設けられた例について示したが、発熱部材３１ａが設けられる部位はウェハＷの外周部に対応する位置に限られず、処理液の処理能力が低いウェハＷの部位に対応する位置に発熱部材３１ａを配置すればよい。 In the third modification, the example in which the heat generating member 31a is provided at a position corresponding only to the outer peripheral portion of the wafer W is shown, but the portion where the heat generating member 31a is provided is not limited to the position corresponding to the outer peripheral portion of the wafer W. The heat generating member 31a may be disposed at a position corresponding to a portion of the wafer W where the processing capacity of the processing liquid is low.
　図７は、実施形態の変形例４に係る基板保持機構３０の構成を示す断面図である。図７に示すように、変形例４では、発熱部材３１ａの厚さが部位により異なっている。たとえば、変形例４では、発熱部材３１ａの外周部がそれ以外の部位よりも厚くなっている。 FIG. 7 is a cross-sectional view showing a configuration of a substrate holding mechanism 30 according to Modification 4 of the embodiment. As shown in FIG. 7, in the modification 4, the thickness of the heat generating member 31a differs depending on the part. For example, in the modification 4, the outer peripheral part of the heat generating member 31a is thicker than other parts.
　このように、発熱部材３１ａの厚さに違いを持たせることにより、厚い部位の発熱部材３１ａをさらに昇温（蓄熱）させながらウェハＷを加熱することができる。したがって、変形例４によれば、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。 Thus, by providing a difference in the thickness of the heat generating member 31a, the wafer W can be heated while the temperature of the heat generating member 31a in the thick part is further increased (heat storage). Therefore, according to the modified example 4, when the processing ability of the processing liquid is different at a plurality of portions on the wafer W, the processing ability of the processing liquid can be made uniform in the plane of the wafer W.
　なお、変形例４では発熱部材３１ａの外周部をそれ以外の部位より厚くした例について示したが、厚くする部位は発熱部材３１ａの外周部に限られず、処理液の処理能力が低いウェハＷの部位に近接する発熱部材３１ａを厚くすればよい。 In the modification 4, the example in which the outer peripheral portion of the heat generating member 31a is thicker than the other portions is shown. However, the thickened portion is not limited to the outer peripheral portion of the heat generating member 31a, and the processing capability of the processing liquid is low. What is necessary is just to thicken the heat generating member 31a close to the part.
　図８Ａは、実施形態の変形例５に係る基板保持機構３０の構成を示す断面図である。図８Ａに示すように、変形例５では、基板保持部３１にワイヤレス温度センサ３６が設けられる。かかるワイヤレス温度センサ３６は、基板保持部３１内の温度情報を無線送信する機能を有し、たとえば、基板保持部３１の発熱部材３１ａ内に複数設けられる。 FIG. 8A is a cross-sectional view illustrating a configuration of a substrate holding mechanism 30 according to Modification 5 of the embodiment. As shown in FIG. 8A, in Modification 5, a wireless temperature sensor 36 is provided on the substrate holding unit 31. The wireless temperature sensor 36 has a function of wirelessly transmitting temperature information in the substrate holding unit 31. For example, a plurality of wireless temperature sensors 36 are provided in the heat generating member 31 a of the substrate holding unit 31.
　図８Ｂは、実施形態の変形例５に係るワイヤレス温度センサ３６の構成を示すブロック図である。図８Ｂに示すように、ワイヤレス温度センサ３６は、受電コイル３６ａと、整流部３６ｂと、電池３６ｃと、温度センサ３６ｄと、送信部３６ｅとを有する。 FIG. 8B is a block diagram illustrating a configuration of the wireless temperature sensor 36 according to the fifth modification of the embodiment. As shown in FIG. 8B, the wireless temperature sensor 36 includes a power receiving coil 36a, a rectifying unit 36b, a battery 36c, a temperature sensor 36d, and a transmitting unit 36e.
　受電コイル３６ａは、コイル３２から放射される磁束を受け取って、かかる磁束を交流電力に変換し、変換された交流電力を整流部３６ｂに送る。整流部３６ｂは、受電コイル３６ａから送られた交流電力を所定の直流電力に変換し、かかる直流電力を電池３６ｃに送る。電池３６ｃは、整流部３６ｂから送られた直流電力を蓄電する。なお、電磁誘導ワイヤレス充電にかかわらず、磁気共鳴方式や、電波伝搬方式などの他のワイヤレス方式でもよい。 The power receiving coil 36a receives the magnetic flux radiated from the coil 32, converts the magnetic flux into AC power, and sends the converted AC power to the rectifying unit 36b. The rectifying unit 36b converts AC power sent from the power receiving coil 36a into predetermined DC power, and sends the DC power to the battery 36c. The battery 36c stores the DC power sent from the rectifying unit 36b. In addition, other wireless systems, such as a magnetic resonance system and a radio wave propagation system, may be used regardless of electromagnetic induction wireless charging.
　整流部３６ｂ、温度センサ３６ｄおよび送信部３６ｅは、電池３６ｃに貯められた電力で動作する。温度センサ３６ｄは、たとえば、熱電対が搭載されたセンサであり、基板保持部３１内の温度を検知する。そして、温度センサ３６ｄは、検知された温度情報を送信部３６ｅに送る。送信部３６ｅは、温度センサ３６ｄから送られた温度情報を外部に送信する。 The rectifying unit 36b, the temperature sensor 36d, and the transmitting unit 36e operate with the electric power stored in the battery 36c. The temperature sensor 36d is, for example, a sensor on which a thermocouple is mounted, and detects the temperature in the substrate holding unit 31. Then, the temperature sensor 36d sends the detected temperature information to the transmission unit 36e. The transmission unit 36e transmits the temperature information sent from the temperature sensor 36d to the outside.
　これにより、ワイヤレス温度センサ３６が搭載された基板保持部３１の温度をモニタリングすることができる。すなわち、変形例５では、モニタリングされる基板保持部３１の温度情報に基づいて、ウェハＷの温度を推定しながら液処理を行うことができる。 Thereby, the temperature of the substrate holder 31 on which the wireless temperature sensor 36 is mounted can be monitored. That is, in the fifth modification, the liquid processing can be performed while estimating the temperature of the wafer W based on the temperature information of the substrate holding unit 31 to be monitored.
　したがって、変形例５によれば、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内でさらに揃えることができる。 Therefore, according to the modified example 5, when the processing ability of the processing liquid is different at a plurality of parts on the wafer W, the processing ability of the processing liquid can be further aligned in the plane of the wafer W.
＜液処理の詳細＞
　つづいて、図９を参照しながら、実施形態に係る液処理の詳細について説明する。図９は、実施形態に係る液処理における処理手順を示すフローチャートである。 <Details of liquid treatment>
Next, details of the liquid processing according to the embodiment will be described with reference to FIG. FIG. 9 is a flowchart illustrating a processing procedure in the liquid processing according to the embodiment.
　まず、キャリアＣから、基板搬送装置１３と、受渡部１４と、基板搬送装置１７とを経由して、ウェハＷを液処理ユニット１６の内部に搬送し、液処理ユニット１６の基板保持部３１でウェハＷを保持する。 First, the wafer W is transferred from the carrier C to the inside of the liquid processing unit 16 via the substrate transfer device 13, the delivery unit 14, and the substrate transfer device 17, and the substrate holding unit 31 of the liquid processing unit 16 The wafer W is held.
　つづいて、制御部１８は、液処理ユニット１６を制御して、基板保持部３１に保持されたウェハＷに処理液を供給する（ステップＳ１０１）。かかる処理液を供給する処理は、たとえば、処理液供給部４０を動作させて、処理液供給源４６ａに貯蔵される所定の処理液をノズル４１ａを介してウェハＷ上に吐出することにより行われる。 Subsequently, the control unit 18 controls the liquid processing unit 16 to supply the processing liquid to the wafer W held on the substrate holding unit 31 (step S101). The processing for supplying the processing liquid is performed, for example, by operating the processing liquid supply unit 40 and discharging a predetermined processing liquid stored in the processing liquid supply source 46a onto the wafer W through the nozzle 41a. .
　つづいて、制御部１８は、液処理ユニット１６を制御して、コイル３２により断熱部材３１ｂを有する発熱部材３１ａを誘導加熱してウェハＷを加熱する（ステップＳ１０２）。かかるウェハＷを加熱する工程は、たとえば、コイル３２に電力を供給することにより行われる。 Subsequently, the control unit 18 controls the liquid processing unit 16 to heat the heating member 31a having the heat insulating member 31b by the coil 32 to heat the wafer W (step S102). The step of heating the wafer W is performed by supplying power to the coil 32, for example.
　そして、かかるウェハＷを加熱する工程は、ウェハＷに供給された処理液の処理能力を変化させる。かかる加熱する処理が完了すると、実施形態に係るウェハＷに対する液処理が完了する。 Then, the process of heating the wafer W changes the processing capability of the processing liquid supplied to the wafer W. When the heating process is completed, the liquid process for the wafer W according to the embodiment is completed.
　以上、本発明の実施形態について説明したが、本発明は上記実施形態に限定されるものではなく、その趣旨を逸脱しない限りにおいて種々の変更が可能である。たとえば、変形例１や変形例２では、コイルを４つ設けた例について示したが、コイルは２つや３つでもよく、５つ以上でもよい。 As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, A various change is possible unless it deviates from the meaning. For example, in Modification 1 and Modification 2, an example in which four coils are provided has been described, but the number of coils may be two, three, or five or more.
　また、実施形態では、基板保持部３１がウェハＷを真空チャックする場合について示したが、基板保持部３１はウェハＷを真空チャックする場合に限られず、たとえばウェハＷを静電チャックしてもよい。 In the embodiment, the case where the substrate holding unit 31 vacuum chucks the wafer W has been described. However, the substrate holding unit 31 is not limited to the case where the wafer W is vacuum chucked. For example, the wafer W may be electrostatically chucked. .
　実施形態に係る液処理装置は、発熱部材３１ａと、基板保持部３１と、処理液供給部４０と、コイル３２とを備える。発熱部材３１ａは、基板（ウェハＷ）に近接して配置され断熱部材３１ｂを有する。基板保持部３１は、基板（ウェハＷ）を保持する。処理液供給部４０は、基板保持部３１に保持された基板（ウェハＷ）上に処理液を供給する。コイル３２は、発熱部材３１ａを誘導加熱することにより基板（ウェハＷ）を加熱する。これにより、液処理されるウェハＷを効率的かつ安定的に加熱することができる。 The liquid processing apparatus according to the embodiment includes a heat generating member 31a, a substrate holding unit 31, a processing liquid supply unit 40, and a coil 32. The heat generating member 31a is disposed close to the substrate (wafer W) and has a heat insulating member 31b. The substrate holding unit 31 holds a substrate (wafer W). The processing liquid supply unit 40 supplies the processing liquid onto the substrate (wafer W) held by the substrate holding unit 31. The coil 32 heats the substrate (wafer W) by induction heating the heat generating member 31a. Thereby, the wafer W to be liquid-treated can be heated efficiently and stably.
　また、実施形態に係る液処理装置において、断熱部材３１ｂは、発熱部材３１ａに対して基板（ウェハＷ）とは反対側に配置される。これにより、液処理されるウェハＷをさらに効率的に加熱することができる。 In the liquid processing apparatus according to the embodiment, the heat insulating member 31b is disposed on the opposite side of the heat generating member 31a from the substrate (wafer W). Thereby, the wafer W to be liquid-treated can be heated more efficiently.
　また、変形例２に係る液処理装置において、発熱部材３１ａは、分割して配置される。これにより、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。 Further, in the liquid processing apparatus according to the modified example 2, the heat generating member 31a is divided and arranged. Thereby, when the processing capability of the processing liquid is different at a plurality of portions on the wafer W, the processing capability of the processing liquid can be made uniform in the plane of the wafer W.
　また、変形例３に係る液処理装置において、発熱部材３１ａは、ウェハＷの一部にのみ対応する位置に設けられる。これにより、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。 Further, in the liquid processing apparatus according to the modified example 3, the heat generating member 31a is provided at a position corresponding to only a part of the wafer W. Thereby, when the processing capability of the processing liquid is different at a plurality of portions on the wafer W, the processing capability of the processing liquid can be made uniform in the plane of the wafer W.
　また、変形例１、２に係る液処理装置において、コイル３２ａ～３２ｄは、複数設けられ、複数のコイル３２ａ～３２ｄは、基板（ウェハＷ）の複数の部位を個別に加熱可能である。これにより、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内で揃えることができる。なお、処理能力を意図的に変更して面内のエッチング量を変更することもできる。 In the liquid processing apparatus according to the first and second modifications, a plurality of coils 32a to 32d are provided, and the plurality of coils 32a to 32d can individually heat a plurality of portions of the substrate (wafer W). Thereby, when the processing capability of the processing liquid is different at a plurality of portions on the wafer W, the processing capability of the processing liquid can be made uniform in the plane of the wafer W. Note that the in-plane etching amount can be changed by intentionally changing the processing capability.
　また、変形例１、２に係る液処理装置において、コイル３２ａ～３２ｄは、基板（ウェハＷ）と向かい合う位置に基板（ウェハＷ）の周方向に沿って配置され、複数のコイル３２ａ～３２ｄは、基板（ウェハＷ）の径方向に沿って並んで配置される。これにより、周方向で異なる処理液の処理能力をウェハＷの面内で揃えることができる。なお、処理能力を意図的に変更して面内のエッチング量を変更することもできる。 In the liquid processing apparatuses according to the first and second modifications, the coils 32a to 32d are arranged along the circumferential direction of the substrate (wafer W) at positions facing the substrate (wafer W), and the plurality of coils 32a to 32d are These are arranged side by side along the radial direction of the substrate (wafer W). Thereby, the processing capability of the processing liquid which is different in the circumferential direction can be made uniform in the plane of the wafer W. Note that the in-plane etching amount can be changed by intentionally changing the processing capability.
　また、実施形態に係る液処理装置は、コイル３２から発熱部材３１ａ以外の箇所に漏れる磁束を遮蔽する遮蔽部材３３をさらに備える。これにより、液処理されるウェハＷをさらに安定的に加熱することができる。 In addition, the liquid processing apparatus according to the embodiment further includes a shielding member 33 that shields magnetic flux leaking from the coil 32 to a portion other than the heat generating member 31a. Thereby, the wafer W to be liquid-treated can be heated more stably.
　また、変形例５に係る液処理装置において、基板保持部３１は、コイル３２から放射される磁束から変換された電力により動作して温度を検知し、検知された温度情報を無線送信するワイヤレス温度センサ３６を備える。これにより、ウェハＷにおける複数の部位で処理液の処理能力が異なる場合に、かかる処理液の処理能力をウェハＷの面内でさらに揃えることができる。なお、処理能力を意図的に変更して面内のエッチング量を変更することもできる。 Further, in the liquid processing apparatus according to the modified example 5, the substrate holding unit 31 operates with electric power converted from the magnetic flux radiated from the coil 32 to detect the temperature, and wirelessly transmits the detected temperature information wirelessly. A sensor 36 is provided. Thereby, when the processing capability of the processing liquid is different at a plurality of portions on the wafer W, the processing capability of the processing liquid can be further aligned in the plane of the wafer W. Note that the in-plane etching amount can be changed by intentionally changing the processing capability.
　また、実施形態に係る液処理装置において、基板保持部３１は、基板（ウェハＷ）と直接接触するように基板（ウェハＷ）を保持する。これにより、液処理されるウェハＷをさらに効率的に加熱することができる。 In the liquid processing apparatus according to the embodiment, the substrate holding unit 31 holds the substrate (wafer W) so as to be in direct contact with the substrate (wafer W). Thereby, the wafer W to be liquid-treated can be heated more efficiently.
　また、実施形態に係る液処理方法は、基板保持部３１に保持された基板（ウェハＷ）に処理液を供給する工程（ステップＳ１０１）と、コイル３２により断熱部材３１ｂを有する発熱部材３１ａを誘導加熱して基板（ウェハＷ）を加熱する工程（ステップＳ１０２）と、を含む。そして、加熱する工程（ステップＳ１０２）は、基板（ウェハＷ）に供給された処理液の処理能力を変化させる。これにより、効率的かつ安定的に加熱されたウェハＷで液処理を行うことができる。 In the liquid processing method according to the embodiment, the process liquid is supplied to the substrate (wafer W) held by the substrate holding unit 31 (step S101), and the heating member 31a having the heat insulating member 31b is guided by the coil 32. Heating (step S102) a step of heating the substrate (wafer W). And the process (step S102) of heating changes the processing capability of the process liquid supplied to the board | substrate (wafer W). Thereby, liquid processing can be performed with the wafer W heated efficiently and stably.
　なお、上記実施形態では、基板保持部３１はウェハＷの裏面を保持していたが、必ずしもウェハＷの裏面を保持する必要はなく、ウェハＷの端を保持するものであってもよい。その場合、基板保持部３１と発熱部材３１ａ及び断熱部材３１ｂは別体であってよい。発熱部材３１ａと断熱部材３１ｂが一体となっていればよい。 In the above embodiment, the substrate holding unit 31 holds the back surface of the wafer W. However, the substrate holding unit 31 does not necessarily hold the back surface of the wafer W, and may hold the edge of the wafer W. In that case, the board | substrate holding | maintenance part 31, the heat generating member 31a, and the heat insulation member 31b may be a different body. The heat generating member 31a and the heat insulating member 31b may be integrated.
　また、上記実施形態では、液処理中に基板保持部３１が回転する例を記載していたが、液処理中に必ずしもウェハＷを回転させる必要はなく、ウェハＷを静止させた状態で加熱を行ってもよい。 Moreover, in the said embodiment, although the example which the substrate holding part 31 rotates during liquid processing was described, it is not necessary to rotate the wafer W during liquid processing, and it heats in the state which left the wafer W stationary. You may go.
　さらなる効果や変形例は、当業者によって容易に導き出すことができる。このため、本発明のより広範な態様は、以上のように表しかつ記述した特定の詳細および代表的な実施形態に限定されるものではない。したがって、添付の請求の範囲およびその均等物によって定義される総括的な発明の概念の精神または範囲から逸脱することなく、様々な変更が可能である。 Further effects and modifications can be easily derived by those skilled in the art. Thus, the broader aspects of the present invention are not limited to the specific details and representative embodiments shown and described above. Accordingly, various modifications can be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.
　Ｗ　　　ウェハ
　１　　　基板処理システム
　１６　　液処理ユニット
　１８　　制御部
　３０　　基板保持機構
　３１　　基板保持部
　３１ａ　発熱部材
　３１ｂ　断熱部材
　３２、３２ａ～３２ｄ　コイル
　３３　　遮蔽部材
　３６　　ワイヤレス温度センサ
　４０　　処理液供給部 W Wafer 1 Substrate Processing System 16 Liquid Processing Unit 18 Control Unit 30 Substrate Holding Mechanism 31 Substrate Holding Unit 31a Heating Member 31b Heat Insulating Member 32, 32a to 32d Coil 33 Shielding Member 36 Wireless Temperature Sensor 40 Processing Liquid Supply Unit

Claims (10)

  1. 　基板に近接して配置され断熱部材を有する発熱部材と、
    　前記基板を保持する基板保持部と、
    　前記基板保持部に保持された前記基板上に処理液を供給する処理液供給部と、
    　前記発熱部材を誘導加熱することにより前記基板を加熱するコイルと、
    　を備える液処理装置。     A heat generating member disposed in the vicinity of the substrate and having a heat insulating member;
    A substrate holder for holding the substrate;
    A processing liquid supply unit for supplying a processing liquid onto the substrate held by the substrate holding unit;
    A coil for heating the substrate by inductively heating the heating member;
    A liquid processing apparatus comprising:
  2. 　前記断熱部材は、前記発熱部材に対して前記基板とは反対側に配置される請求項１に記載の液処理装置。 2. The liquid processing apparatus according to claim 1, wherein the heat insulating member is disposed on a side opposite to the substrate with respect to the heat generating member.
  3. 　前記発熱部材は、分割して配置される請求項１または２に記載の液処理装置。 The liquid processing apparatus according to claim 1 or 2, wherein the heat generating member is divided and arranged.
  4. 　前記発熱部材は、前記基板の一部にのみ対応する位置に設けられる請求項１～３のいずれか一つに記載の液処理装置。 The liquid processing apparatus according to any one of claims 1 to 3, wherein the heat generating member is provided at a position corresponding to only a part of the substrate.
  5. 　前記コイルは、複数設けられ、
    　複数の前記コイルは、前記基板の複数の部位を個別に加熱可能である請求項１～４のいずれか一つに記載の液処理装置。     A plurality of the coils are provided,
    The liquid processing apparatus according to any one of claims 1 to 4, wherein the plurality of coils are capable of individually heating a plurality of portions of the substrate.
  6. 　前記コイルは、前記基板と向かい合う位置に前記基板の周方向に沿って配置され、
    　複数の前記コイルは、前記基板の径方向に沿って並んで配置される請求項５に記載の液処理装置。     The coil is disposed along the circumferential direction of the substrate at a position facing the substrate,
    The liquid processing apparatus according to claim 5, wherein the plurality of coils are arranged side by side along a radial direction of the substrate.
  7. 　前記コイルから前記発熱部材以外の箇所に漏れる磁束を遮蔽する遮蔽部材をさらに備える請求項１～６のいずれか一つに記載の液処理装置。 The liquid processing apparatus according to any one of claims 1 to 6, further comprising a shielding member that shields magnetic flux leaking from the coil to a portion other than the heat generating member.
  8. 　前記基板保持部は、前記コイルから放射される磁束から変換された電力により動作して温度を検知し、検知された温度情報を無線送信するワイヤレス温度センサを備える請求項１～７のいずれか一つに記載の液処理装置。 8. The substrate holding unit includes a wireless temperature sensor that operates with electric power converted from magnetic flux radiated from the coil to detect temperature and wirelessly transmits detected temperature information. Liquid processing apparatus as described in one.
  9. 　前記基板保持部は、前記基板と直接接触するように前記基板を保持する請求項１～８のいずれか一つに記載の液処理装置。 The liquid processing apparatus according to any one of claims 1 to 8, wherein the substrate holding unit holds the substrate so as to be in direct contact with the substrate.
  10. 　基板保持部に保持された基板に処理液を供給する工程と、
    　コイルにより断熱部材を有する発熱部材を誘導加熱して前記基板を加熱する工程と、
    　を含み、
    　前記加熱する工程は、前記基板に供給された前記処理液の処理能力を変化させる
    　液処理方法。     Supplying a processing liquid to the substrate held by the substrate holding unit;
    A step of inductively heating a heat generating member having a heat insulating member with a coil to heat the substrate;
    Including
    The heating process is a liquid processing method in which a processing capability of the processing liquid supplied to the substrate is changed.
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