WO2019153465A1 - Terahertz band stop filter unit based on metamaterial and terahertz band stop filter - Google Patents

Terahertz band stop filter unit based on metamaterial and terahertz band stop filter Download PDF

Info

Publication number
WO2019153465A1
WO2019153465A1 PCT/CN2018/081336 CN2018081336W WO2019153465A1 WO 2019153465 A1 WO2019153465 A1 WO 2019153465A1 CN 2018081336 W CN2018081336 W CN 2018081336W WO 2019153465 A1 WO2019153465 A1 WO 2019153465A1
Authority
WO
WIPO (PCT)
Prior art keywords
resonator
terahertz band
filter unit
rejection filter
band rejection
Prior art date
Application number
PCT/CN2018/081336
Other languages
French (fr)
Chinese (zh)
Inventor
颜世桃
郑渚
杨彬
丁庆
李程
Original Assignee
雄安华讯方舟科技有限公司
深圳市太赫兹科技创新研究院
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 雄安华讯方舟科技有限公司, 深圳市太赫兹科技创新研究院 filed Critical 雄安华讯方舟科技有限公司
Publication of WO2019153465A1 publication Critical patent/WO2019153465A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]

Definitions

  • the invention relates to the field of terahertz technology, in particular to a terahertz band rejection filter unit and a terahertz band rejection filter based on a metamaterial.
  • the terahertz wave refers to an electromagnetic wave having a frequency in the range of 0.1-10 THz and a wavelength in the range of 30 um to 3 mm, which is between the microwave and the infrared ray in the electromagnetic spectrum.
  • Terahertz waves have unique electromagnetic characteristics such as high pulse-to-noise ratio, high resolution, low photon energy, and different absorption characteristics for polar and non-polar molecules. Based on these electromagnetic properties, terahertz waves show unique advantages in the study of material molecular spectroscopy, material nondestructive testing, biological tissue biopsy, high-precision confidential radar, and inter-satellite broadband communication.
  • Metamaterials are artificial electromagnetic materials composed of periodically arranged subwavelength structural units. Compared to conventional natural materials, metamaterials have special electromagnetic properties such as negative refractive index and negative magnetic permeability. By controlling the shape and size of the metamaterial structural unit and the composition of the material, researchers can achieve tuning and control of electromagnetic waves.
  • a metamaterial-based terahertz band rejection filter unit includes a first resonator, a first dielectric layer, and a second resonator; the first resonator, the first dielectric layer, and the second resonator Arranging the layers in sequence; the first resonator is a ⁇ or U-shaped sheet structure, and the second resonator is a ⁇ or U-shaped sheet structure; the first resonator is identical in structure to the second resonator The size of the first resonator and the second resonator are in a scaled relationship.
  • the scaling ratio ranges from 0.85 to 0.95.
  • the first dielectric layer is stacked between the first resonator and the second resonator, and the sides of the first resonator and the second resonator are arranged in parallel .
  • the projection of the first resonator along the lengthwise direction on the second resonator overlaps the axis along the length of the second resonator.
  • the terahertz band rejection filter further includes a second dielectric layer and a third resonator; the first resonator, the first dielectric layer, the second resonator, the a second dielectric layer and the third resonator are sequentially stacked; the axis of the first resonator along the length direction and the axis of the second resonator along the length direction are on the third resonator Projecting, overlapping the axis of the third resonator along the length direction.
  • the second dielectric layer is stacked between the second resonator and the third resonator, the first resonator, the second resonator, and the third resonance
  • the corresponding sides of the device are all arranged in parallel, and the centers of the first resonator, the second resonator and the third resonator are in a straight line.
  • the first resonator, the second resonator, and the third resonator each have a thickness between 0.4 microns and 0.6 microns.
  • the U-shaped sheet structure of the first resonator comprises a cross-shaped main structure and four short inscribed free ends;
  • the cross-shaped main structure comprises two long inscribed structures that intersect each other, The two long inline structures intersect each other to form four connecting ends, and the four short inscribed free ends abut one another in a clockwise or counterclockwise direction to abut the four connections of the cross body structure On the end.
  • the long inline structure of the cruciform body structure has a length ranging from 98 micrometers to 102 micrometers, and the length of the four short inscribed free ends ranges from 38 micrometers to 42 micrometers;
  • the width of the long inline structure is equal to the width of the short inline structure and the thickness is also equal.
  • a terahertz band rejection filter comprising the terahertz band rejection filter unit according to any one of claims 1-9, wherein the terahertz band rejection filter unit is M *N array arrangement, where M ⁇ 1, N ⁇ 1.
  • the terahertz band rejection filter unit based on the metamaterial is sequentially stacked through the first resonator, the first dielectric layer and the second resonator, and the first resonator and the second resonator are both set to the same ⁇ or
  • the ⁇ -shaped sheet structure due to the rotational symmetry of the ⁇ or U-shaped sheet structure, makes the prepared terahertz band-rejection filter unit insensitive to the incident direction of electromagnetic waves in the terahertz band, thereby achieving wide angle incidence.
  • the size of the first resonator and the second resonator's ⁇ or ⁇ -shaped sheet structure is in a relaxed relationship, and also serves to broaden the range of the terahertz frequency band that can be attenuated or reflected.
  • FIG. 1 is a structural diagram of a terahertz band rejection filter unit according to an embodiment
  • FIG. 2 is a structural diagram of one embodiment of a first resonator or a second resonator in a terahertz band rejection filter unit of the embodiment shown in FIG. 1;
  • FIG. 3 is a structural diagram of one of the embodiments of the terahertz band rejection filter unit of the embodiment shown in FIG. 1;
  • FIG. 4 is a schematic structural view of one embodiment of a U-shaped sheet structure in the terahertz band rejection filter unit of the embodiment shown in FIG. 1;
  • FIG. 5 is a schematic structural view of one embodiment of a ⁇ -shaped sheet structure in the terahertz band rejection filter unit of the embodiment shown in FIG. 1;
  • FIG. 6 is a structural diagram of one embodiment of a terahertz band rejection filter according to an embodiment
  • FIG. 7 is a schematic diagram of an incident angle of electromagnetic waves in a terahertz band rejection filter according to an embodiment
  • Fig. 8 is a transmission spectrum of the terahertz band rejection filter of the embodiment shown in Fig. 6 when electromagnetic waves are incident.
  • the terahertz band-rejection filter unit can reflect or attenuate electromagnetic waves in the range of the terahertz frequency range on the one hand, so that electromagnetic waves in other frequency bands can pass; on the other hand, it is insensitive to the incident direction of electromagnetic waves in the terahertz frequency range.
  • the terahertz resistance filter unit still maintains good stability against the reflection or transmission capability of electromagnetic waves in the terahertz band.
  • the terahertz band rejection filter unit includes a first resonator 100 , a first dielectric layer 200 , and a second resonator 300 .
  • the material of the first resonator 100 and the second resonator 300 is a metal material, and the metal material may be an electrically conductive metal such as gold, silver, copper, iron or aluminum.
  • the material of the first dielectric layer 200 is a flexible dielectric material.
  • the flexible dielectric material may be a polyimide film or other flexible dielectric material having similar dielectric constant and loss.
  • the first dielectric layer 200 may have a plate shape, but is not limited to a plate shape as long as the separation of the first resonator 100 and the second resonator 300 can be achieved.
  • the first dielectric layer 200 is in the form of a plate having a length and a width of 150 microns and a thickness of 49 microns.
  • the first dielectric layer 200 has a dielectric constant of 3.5, a loss tangent value of 0.0027, and a magnetic permeability of 1.
  • the first resonator 100, the first dielectric layer 200, and the second resonator 300 are sequentially stacked.
  • the first dielectric layer 200 is stacked between the first resonator 100 and the second resonator 300.
  • the first resonator 100 is a ⁇ or U-shaped sheet structure
  • the second resonator 300 is a ⁇ or U-shaped sheet structure.
  • the ⁇ or ⁇ shape may be formed on the upper and lower surfaces of the first dielectric layer 200 by chemical vapor deposition (CVD), physical vapor deposition (PVD), thereby forming ⁇ or ⁇ The first resonator 100 and the second resonator 300 of a zigzag-like structure.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • the ⁇ or U-shaped sheet structure comprises a first metal strip and a second metal strip which are bent in two stages, the first metal strip and the second metal strip each comprise a main body section and a vertical extension from both ends of the main body section The extension is extended, and the two extensions connected to the same body segment extend in opposite directions.
  • the main body section of the first metal strip and the main body section of the second metal strip are crisscrossed, and the extending directions of the four extending sections are sequentially changed clockwise by 90 degrees or sequentially by 90 degrees counterclockwise.
  • the first resonator 100 has the same structure as the second resonator 300, and the size of the first resonator 100 and the second resonator 300 are in a scaled relationship.
  • the first resonator 100 and the second resonator 300 are also provided with rotational symmetry, so that electromagnetic waves in the terahertz range incident at multiple angles maintain good reflection ability or Attenuation ability.
  • the size of the first resonator 100 and the second resonator 300 are in a contracted relationship, so that the resonance frequency of the electromagnetic wave in the range of the incident terahertz band is lowered, thereby functioning to widen the bandwidth.
  • the above-described metamaterial-based terahertz band rejection filter unit is sequentially stacked through the first resonator 100, the first dielectric layer 200, and the second resonator 300, and the first resonator 100 and the second resonator are disposed.
  • the resonators 300 are all set to the same ⁇ or U-shaped sheet-like structure, and the prepared terahertz band-rejection filter unit is incident on electromagnetic waves in the terahertz band due to the rotational symmetry of the ⁇ or U-shaped sheet structure.
  • the direction is insensitive, thereby achieving wide angle incidence, while the first resonator 100 is in a contracted relationship with the size of the meandering or ⁇ -shaped sheet structure of the second resonator 300, and also serves to broaden the attenuable or reflective terahertz.
  • the role of the frequency range is insensitive, thereby achieving wide angle incidence, while the first resonator 100 is in a contracted relationship with the size of the meandering or ⁇ -shaped sheet structure of the second resonator 300, and also serves to broaden the attenuable or reflective terahertz.
  • the scaling ratio ranges from 0.85 to 0.95.
  • the ratio of shrinkage is 0.9.
  • the area of the first resonator 100 is larger than the area of the second resonator 300, and the ratio of the respective sides of the first resonator 100 and the second resonator 300 is 0.9, that is, the area of the second resonator 300. Only 0.9 of the first resonator 100, the scaling ratio can broaden the bandwidth of the terahertz band that can be attenuated or reflected.
  • the first dielectric layer 200 is stacked between the first resonator 100 and the second resonator 300 , and the sides of the first resonator 100 and the second resonator 300 are arranged in parallel. . That is, the first dielectric layer 200 separates the first resonator 100 from the second resonator 300. At the same time, the ⁇ or U-shaped sheet structure of the first resonator 100 and the sides corresponding to the ⁇ or U-shaped sheet structure of the second resonator 300 are maintained in a parallel relationship.
  • the projection of the first resonator 100 along the lengthwise direction on the second resonator 300 overlaps the axis of the second resonator 300 in the length direction.
  • the first resonator 100 is projected on the second resonator 300 along the lengthwise axis, the projection overlapping the axis of the second resonator 300 in the longitudinal direction, thereby causing the first resonator 100 and the second
  • the respective sides of the resonator 300 are parallel to each other, that is, if the first resonator 100 is projected onto the second resonator 300, the centers of the first resonator 100 and the second resonator 300 coincide and the respective sides are parallel to each other, so that Both the resonator 100 and the second resonator 300 have a rotational symmetry structure, so that the terahertz band rejection filter unit is insensitive to the incident direction of the electromagnetic wave and can be incident at multiple angles.
  • the terahertz band rejection filter further includes a second dielectric layer 400 and a third resonator 500.
  • the first resonator 100, the first dielectric layer 200, the second resonator 300, the second dielectric layer 400, and the third resonator 500 are sequentially stacked.
  • the third resonator 500 has the same structure as the first resonator 100 and the second resonator 300.
  • the structure of the terahertz band rejection filter unit is five layers, which are stacked from top to bottom, and are, in order, the first resonator 100, the first dielectric layer 200, the second resonator 300, the second dielectric layer 400, and the The three resonators 500, and the first resonator 100, the second resonator 300, and the third resonator 500 are all of the same ⁇ or U-shaped sheet structure.
  • the five-layer terahertz band rejection filter unit further broadens the electromagnetic waves in the terahertz band that can be attenuated or reflected.
  • the structure of the terahertz band-stop filter unit is not limited to three or five layers, and may be other layers, as long as the number of layers is increased to widen the range of the terahertz band that can be attenuated or reflected or not to the incident direction of electromagnetic waves. Sensitive.
  • the third resonator 500 is identical in structure to the first resonator 100, that is, the third resonator 500 has the same ⁇ or U-shaped sheet structure as the first resonator 100, and the ⁇ or ⁇ -shaped piece The dimensions of the respective sides of the structure are also identical.
  • the size of the first resonator 100 and the size of the second resonator 300 are reduced in a specific ratio in terms of length and width, that is, the area of the first resonator 100 is larger than the area of the second resonator 300.
  • the size of the second resonator 300 and the size of the third resonator 500 are also reduced by the specific ratio, and the area of the second resonator 300 is larger than the area of the third resonator 500, or the size of the third resonator 500 is the first It is also possible that the size of the resonator 100 or the second resonator 300 remains the same.
  • the second dielectric layer 400 is stacked between the second resonator 300 and the third resonator 500, and the sides of the first resonator 100, the second resonator 300, and the third resonator 500 are arranged in parallel. .
  • the first resonator 100, the first dielectric layer 200, the second resonator 300, the second dielectric layer 400, and the third resonator 500 are sequentially stacked, and the sizes of the first dielectric layer 200 and the second dielectric layer 400 are sequentially disposed.
  • the first resonator 100, the second resonator 300, and the third resonator 500 may be isolated from each other.
  • the axis of the first resonator 100 along the longitudinal direction and the axis of the second resonator 300 along the length direction are projected on the third resonator 500, and the axis projections of both of them overlap with the axis of the third resonator 500. This ensures maximum attenuation or emission of multiple incident electromagnetic waves.
  • the first resonator 100, the second resonator 300, and the third resonator 500 are made of a metal material.
  • the metal material may be an electrically conductive metal such as gold, silver, copper, iron or aluminum.
  • the thicknesses of the first resonator 100, the second resonator 300, and the third resonator 500 are each between 0.4 microns and 0.6 microns.
  • the thickness of the first resonator 100, the second resonator 300, and the third resonator 500 are both 0.5 micrometers.
  • the meandering or U-shaped sheet structure of the first resonator 100 comprises a cross-shaped body structure and four short inscribed free ends.
  • the cross-shaped main structure comprises two long straight-shaped structures crossing each other, and the two long-shaped one-shaped structures cross each other to form four connecting ends, and the four short-shaped free ends abut one-to-one in a clockwise or counterclockwise direction.
  • the four connecting ends of the cross-shaped main structure Preferably, referring to FIG. 2 and FIG. 4, the two long in-line structures intersecting each other are perpendicular to each other, and the two long in-line structures are perpendicular to each other to form equal length and width of the four connecting ends.
  • the four short inscribed free ends abut one-to-one in a clockwise direction on the four connecting ends of the cross-shaped main structure. Wherein, the four short inscribed free ends are perpendicular to the four connecting ends of the corresponding cross-shaped main structure, and maintain the same structure. Also.
  • the U-shaped sheet structure of the first resonator 100 can also be as shown in FIG.
  • the long inline structure of the cruciform body structure ranges from 98 microns to 102 microns in length, and the length of the four short inscribed free ends ranges from 38 microns to 42 microns.
  • the width of the long inline structure is equal to the width of the short inline structure and the thickness is also equal.
  • the length L 1 of the long inline structure of the cruciform body structure is 100 micrometers
  • the length L 2 of the four short inscribed free ends is 40 micrometers
  • the width W 1 and the length of the long inline structure are short.
  • the in-line structure has a width W 2 of 13 ⁇ m and a thickness of 0.5 ⁇ m.
  • An embodiment provides a terahertz band rejection filter comprising the above terahertz band rejection filter unit, the terahertz band rejection filter unit being arranged in an M*N array, wherein M ⁇ 1, N ⁇ 1.
  • the terahertz band stop filter is periodically arranged by the terahertz band rejection filter unit to form a 6*6 array structure, as shown in FIG.
  • the 3H electromagnetic simulation software is used to design and optimize the terahertz band-rejection filter unit, and finally the terahertz band rejection filter with excellent performance is obtained.
  • the boundary condition of the terahertz band rejection filter is a periodic array structure.
  • the incident angle of the electromagnetic wave is three-dimensionally angled with the terahertz band-stop filter, with the YZ plane as the reference surface, at an angle ⁇ with the Z-axis center line, with the XZ plane as the reference surface, and the rotation angle around the Z-axis is ⁇ , the angle diagram As shown in Figure 6.
  • FIG. 7 is a transmission spectrum of the terahertz band rejection filter at an electromagnetic wave width angle (0° to 45°). It can be seen from the figure that the terahertz band-stop filter exhibits good stability in the operating frequency band as the incident angle increases.
  • the center frequency f 0 is approximately equal to 0.57 THz, and in the range of 0.54 to 0.61 THz, the transmission coefficient of the terahertz band rejection filter reaches -29 dB, which increases with the incident angle ⁇ . Large, the bandwidth is red-shifted, and the transmission coefficient is decreasing. It can be seen that due to the rotational symmetry of the terahertz resistance filtering unit, the structure of the terahertz band-stop filter is a polarization-insensitive structure, which further proves that the terahertz band resistance
  • the filter structure can be adapted to a variety of complex application scenarios.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Aerials With Secondary Devices (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

The present invention relates to a terahertz band stop filter unit based on a metamaterial, comprising a first resonator, a first dielectric layer, and a second resonator. The first resonator, the first dielectric layer and the second resonator are in turn arranged in a laminated manner; the first resonator is in a 卍 or 卐-shaped sheet structure, and the second resonator is in a 卍 or 卐-shaped sheet structure; the first resonator and the second resonator have the same structure; the sizes of the first resonator and the second resonator are in scaling proportional relation. The prepared terahertz band stop filter unit is insensitive to the incident direction of electromagnetic waves within the terahertz frequency band range, so that a wide angle incidence is realized and meanwhile an attenuatable or reflexible terahertz frequency band range is widened.

Description

基于超材料的太赫兹带阻滤波器单元及太赫兹带阻滤波器Terahertz band rejection filter unit based on metamaterial and terahertz band rejection filter 技术领域Technical field
本发明涉及太赫兹技术领域，特别是涉及一种基于超材料的太赫兹带阻滤波器单元及太赫兹带阻滤波器。The invention relates to the field of terahertz technology, in particular to a terahertz band rejection filter unit and a terahertz band rejection filter based on a metamaterial.
背景技术Background technique
太赫兹波是指频率在0.1-10THz范围、波长在30um-3mm范围的电磁波，在电磁波谱中介于微波与红外线之间。太赫兹波具有脉冲信噪比高、分辨率高、光子能量低及对极性和非极性分子吸收特性不同等独特的电磁特性。基于这些电磁特性，太赫兹波在材料分子光谱分析、材料无损检测、生物组织活体检查、高精度保密雷达、卫星间宽带通信等方面的研究中展现了独特的优势。The terahertz wave refers to an electromagnetic wave having a frequency in the range of 0.1-10 THz and a wavelength in the range of 30 um to 3 mm, which is between the microwave and the infrared ray in the electromagnetic spectrum. Terahertz waves have unique electromagnetic characteristics such as high pulse-to-noise ratio, high resolution, low photon energy, and different absorption characteristics for polar and non-polar molecules. Based on these electromagnetic properties, terahertz waves show unique advantages in the study of material molecular spectroscopy, material nondestructive testing, biological tissue biopsy, high-precision confidential radar, and inter-satellite broadband communication.
超材料是由周期性排列的亚波长结构单元组成的人工电磁材料。与常规自然材料相比，超材料具有负的折射率和负的磁导率等特殊的电磁特性。通过对超材料结构单元形状尺寸及材料组分的控制，研究人员可以实现对电磁波的调谐与控制。Metamaterials are artificial electromagnetic materials composed of periodically arranged subwavelength structural units. Compared to conventional natural materials, metamaterials have special electromagnetic properties such as negative refractive index and negative magnetic permeability. By controlling the shape and size of the metamaterial structural unit and the composition of the material, researchers can achieve tuning and control of electromagnetic waves.
近年来，对于基于超材料结构的太赫兹功能器件的研究越来越多，使得对太赫兹波段的理解及应用越来越多。目前，传统的基于超材料的带阻滤波器可以通过大多数频率分量、但将某些范围的频率分量衰减到极低水平。但是，可实现太赫兹范围内的带阻滤波器的单元结构对电磁波的入射方向比较敏感，继而限制其在实际中的应用。In recent years, more and more researches on terahertz functional devices based on metamaterial structures have made the understanding and application of the terahertz band more and more. Currently, conventional metamaterial-based band-stop filters can attenuate most of the frequency components, but attenuate certain ranges of frequency components to very low levels. However, the cell structure that can realize the band rejection filter in the terahertz range is sensitive to the incident direction of the electromagnetic wave, and then limits its application in practice.
发明内容Summary of the invention
基于此，有必要针对基于超材料的带阻滤波器的单元结构对电磁波的入射方向比较敏感的问题，提供一种基于超材料的太赫兹带阻滤波器单元及太赫兹带阻滤波器。Based on this, it is necessary to provide a terahertz band-stop filter unit based on metamaterial and a terahertz band stop filter for the problem that the cell structure of the metamaterial-based band rejection filter is sensitive to the incident direction of electromagnetic waves.
一种基于超材料的太赫兹带阻滤波器单元，包括第一谐振器、第一介质层 及第二谐振器；所述第一谐振器、所述第一介质层及所述第二谐振器依次层叠设置；所述第一谐振器为卍或卐字形片状结构，所述第二谐振器为卍或卐字形片状结构；所述第一谐振器与所述第二谐振器的结构相同，所述第一谐振器与所述第二谐振器的尺寸呈放缩比例关系。A metamaterial-based terahertz band rejection filter unit includes a first resonator, a first dielectric layer, and a second resonator; the first resonator, the first dielectric layer, and the second resonator Arranging the layers in sequence; the first resonator is a 卍 or U-shaped sheet structure, and the second resonator is a 卍 or U-shaped sheet structure; the first resonator is identical in structure to the second resonator The size of the first resonator and the second resonator are in a scaled relationship.
在其中一个实施例中，所述放缩比例范围为0.85至0.95。In one of the embodiments, the scaling ratio ranges from 0.85 to 0.95.
在其中一个实施例中，所述第一介质层层叠于所述第一谐振器与所述第二谐振器之间，所述第一谐振器与所述第二谐振器对应的边均平行设置。In one embodiment, the first dielectric layer is stacked between the first resonator and the second resonator, and the sides of the first resonator and the second resonator are arranged in parallel .
在其中一个实施例中，所述第一谐振器沿长度方向上的轴线在与所述第二谐振器上的投影、与所述第二谐振器沿长度方向上的轴线重叠。In one of the embodiments, the projection of the first resonator along the lengthwise direction on the second resonator overlaps the axis along the length of the second resonator.
在其中一个实施例中，所述太赫兹带阻滤波器还包括第二介质层和第三谐振器；所述第一谐振器、所述第一介质层、所述第二谐振器、所述第二介质层及所述第三谐振器依次层叠设置；所述第一谐振器沿长度方向上的轴线及所述第二谐振器沿长度方向上的轴线在与所述第三谐振器上的投影、与所述第三谐振器沿长度方向上的轴线重叠。In one embodiment, the terahertz band rejection filter further includes a second dielectric layer and a third resonator; the first resonator, the first dielectric layer, the second resonator, the a second dielectric layer and the third resonator are sequentially stacked; the axis of the first resonator along the length direction and the axis of the second resonator along the length direction are on the third resonator Projecting, overlapping the axis of the third resonator along the length direction.
在其中一个实施例中，所述第二介质层层叠于所述第二谐振器与所述第三谐振器之间，所述第一谐振器、所述第二谐振器与所述第三谐振器对应的边均平行设置，且所述第一谐振器、所述第二谐振器及所述第三谐振器的中心在一条直线上。In one embodiment, the second dielectric layer is stacked between the second resonator and the third resonator, the first resonator, the second resonator, and the third resonance The corresponding sides of the device are all arranged in parallel, and the centers of the first resonator, the second resonator and the third resonator are in a straight line.
在其中一个实施例中，所述第一谐振器、所述第二谐振器及所述第三谐振器的厚度均处于0.4微米至0.6微米之间。In one embodiment, the first resonator, the second resonator, and the third resonator each have a thickness between 0.4 microns and 0.6 microns.
在其中一个实施例中，所述第一谐振器的卍字形片状结构包括十字形主体结构和四个短一字形自由端；所述十字形主体结构包括两个相互交叉的长一字形结构，所述两个长一字形结构相互交叉后形成四个连接端，所述四个短一字形自由端以顺时针或逆时针的方向一一对应抵接于所述十字形主体结构的四个连接端上。In one embodiment, the U-shaped sheet structure of the first resonator comprises a cross-shaped main structure and four short inscribed free ends; the cross-shaped main structure comprises two long inscribed structures that intersect each other, The two long inline structures intersect each other to form four connecting ends, and the four short inscribed free ends abut one another in a clockwise or counterclockwise direction to abut the four connections of the cross body structure On the end.
在其中一个实施例中，所述十字形主体结构的长一字形结构的长度范围处于98微米至102微米之间，所述四个短一字形自由端的长度范围为38微米至42微米；所述长一字形结构的宽度与所述短一字形结构的宽度相等，厚度也相 等。In one embodiment, the long inline structure of the cruciform body structure has a length ranging from 98 micrometers to 102 micrometers, and the length of the four short inscribed free ends ranges from 38 micrometers to 42 micrometers; The width of the long inline structure is equal to the width of the short inline structure and the thickness is also equal.
在其中一个实施例中，一种太赫兹带阻滤波器，包括权利要求1-9中任一项权利要求所述的太赫兹带阻滤波器单元，所述太赫兹带阻滤波器单元呈M*N阵列排布，其中，M≥1，N≥1。In one embodiment, a terahertz band rejection filter comprising the terahertz band rejection filter unit according to any one of claims 1-9, wherein the terahertz band rejection filter unit is M *N array arrangement, where M≥1, N≥1.
上述基于超材料的太赫兹带阻滤波器单元，通过第一谐振器、第一介质层及第二谐振器依次层叠设置，且将第一谐振器和第二谐振器均设为相同的卍或卐字形片状结构，由于卍或卐字形片状结构的旋转对称性，使得所制备的太赫兹带阻滤波器单元对太赫兹频段范围内的电磁波的入射方向不敏感，从而实现了宽角度入射，同时第一谐振器与第二谐振器的卍或卐字形片状结构的尺寸呈放缩关系，也起到拓宽可衰减或可反射的太赫兹频段范围的作用。The terahertz band rejection filter unit based on the metamaterial is sequentially stacked through the first resonator, the first dielectric layer and the second resonator, and the first resonator and the second resonator are both set to the same 卍 or The 卐-shaped sheet structure, due to the rotational symmetry of the 卍 or U-shaped sheet structure, makes the prepared terahertz band-rejection filter unit insensitive to the incident direction of electromagnetic waves in the terahertz band, thereby achieving wide angle incidence. At the same time, the size of the first resonator and the second resonator's 卍 or 卐-shaped sheet structure is in a relaxed relationship, and also serves to broaden the range of the terahertz frequency band that can be attenuated or reflected.
附图说明DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他实施例的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and those skilled in the art can obtain drawings of other embodiments according to the drawings without any creative work.
图1为一实施方式提供的太赫兹带阻滤波器单元的结构图；1 is a structural diagram of a terahertz band rejection filter unit according to an embodiment;
图2为图1所示实施方式的太赫兹带阻滤波器单元中的第一谐振器或第二谐振器的其中一个实施例的结构图；2 is a structural diagram of one embodiment of a first resonator or a second resonator in a terahertz band rejection filter unit of the embodiment shown in FIG. 1;
图3为图1所示实施方式的太赫兹带阻滤波器单元中的其中一个实施例的结构图；3 is a structural diagram of one of the embodiments of the terahertz band rejection filter unit of the embodiment shown in FIG. 1;
图4为图1所示实施方式的太赫兹带阻滤波器单元中卐字形片状结构的其中一个实施例的结构示意图；4 is a schematic structural view of one embodiment of a U-shaped sheet structure in the terahertz band rejection filter unit of the embodiment shown in FIG. 1;
图5为图1所示实施方式的太赫兹带阻滤波器单元中卍字形片状结构的其中一个实施例的结构示意图；5 is a schematic structural view of one embodiment of a 卍-shaped sheet structure in the terahertz band rejection filter unit of the embodiment shown in FIG. 1;
图6为一实施方式提供的太赫兹带阻滤波器的其中一个实施例的结构图；6 is a structural diagram of one embodiment of a terahertz band rejection filter according to an embodiment;
图7为一实施方式提供的太赫兹带阻滤波器中电磁波的入射角度示意图；7 is a schematic diagram of an incident angle of electromagnetic waves in a terahertz band rejection filter according to an embodiment;
图8为图6所示实施例中的太赫兹带阻滤波器在电磁波入射时所得的透射 谱。Fig. 8 is a transmission spectrum of the terahertz band rejection filter of the embodiment shown in Fig. 6 when electromagnetic waves are incident.
具体实施方式Detailed ways
为了便于理解本发明，下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳实施例。但是，本发明可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。In order to facilitate the understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the understanding of the present disclosure will be more fully understood.
除非另有定义，本文所使用的所有的技术和科学术语与属于发明的技术领域的技术人员通常理解的含义相同。本文中在发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在限制本发明。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning meaning meaning The terminology used herein is for the purpose of describing the particular embodiments, The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
一实施方式提供了一种基于超材料的太赫兹带阻滤波器单元。该太赫兹带阻滤波器单元一方面可反射或衰减所入射的太赫兹频段范围内的电磁波，使得其他频段的电磁波均可通过；另一方面对太赫兹频段范围内的电磁波的入射方向不敏感，即多角度入射时，该太赫兹电阻滤波器单元对太赫兹频段范围内的电磁波的反射或透射能力依然保持良好的稳定性。One embodiment provides a metamaterial based terahertz band stop filter unit. The terahertz band-rejection filter unit can reflect or attenuate electromagnetic waves in the range of the terahertz frequency range on the one hand, so that electromagnetic waves in other frequency bands can pass; on the other hand, it is insensitive to the incident direction of electromagnetic waves in the terahertz frequency range. When the multi-angle incident occurs, the terahertz resistance filter unit still maintains good stability against the reflection or transmission capability of electromagnetic waves in the terahertz band.
请参考图1，太赫兹带阻滤波器单元包括第一谐振器100、第一介质层200及第二谐振器300。其中，第一谐振器100和第二谐振器300的材料为金属材料，该金属材料可以是金、银、铜、铁及铝等可导电的金属。第一介质层200的材料为柔性介质材料。该柔性介质材料可以是聚酰亚胺薄膜，也可以是其他介电常数和损耗相近的柔性介质材料。该第一介质层200可呈板状，但不局限于板状，只要能实现第一谐振器100与第二谐振器300的分离即可。优选地，第一介质层200呈板状，其长度和宽度均为150微米，厚度为49微米。优选地，第一介质层200的介电常数为3.5，损耗角正切值为0.0027，磁导率为1。Referring to FIG. 1 , the terahertz band rejection filter unit includes a first resonator 100 , a first dielectric layer 200 , and a second resonator 300 . The material of the first resonator 100 and the second resonator 300 is a metal material, and the metal material may be an electrically conductive metal such as gold, silver, copper, iron or aluminum. The material of the first dielectric layer 200 is a flexible dielectric material. The flexible dielectric material may be a polyimide film or other flexible dielectric material having similar dielectric constant and loss. The first dielectric layer 200 may have a plate shape, but is not limited to a plate shape as long as the separation of the first resonator 100 and the second resonator 300 can be achieved. Preferably, the first dielectric layer 200 is in the form of a plate having a length and a width of 150 microns and a thickness of 49 microns. Preferably, the first dielectric layer 200 has a dielectric constant of 3.5, a loss tangent value of 0.0027, and a magnetic permeability of 1.
第一谐振器100、第一介质层200及第二谐振器300依次层叠设置。换言之，第一介质层200层叠于第一谐振器100和第二谐振器300之间。The first resonator 100, the first dielectric layer 200, and the second resonator 300 are sequentially stacked. In other words, the first dielectric layer 200 is stacked between the first resonator 100 and the second resonator 300.
请参考图2，第一谐振器100为卍或卐字形片状结构，第二谐振器300为卍或卐字形片状结构。其中，该卍或卐字形可通过化学气相淀积(Chemical Vapor  Deposition、CVD)、物理汽相淀积(Physical Vapor Deposition，PVD)形成在第一介质层200的上下表面，从而形成具有卍或卐字形片状结构的第一谐振器100和第二谐振器300。具体地，该卍或卐字形片状结构包括呈两段弯折的第一金属条和第二金属条，第一金属条和第二金属条均包括主体段和自主体段两端垂直延伸的延伸段，且与同一主体段连接的两个延伸段的延伸方向相反。第一金属条的主体段和第二金属条的主体段呈十字交叉，四个延伸段的延伸方向依次以顺时针呈90度变化或依次以逆时针呈90度变化。Referring to FIG. 2, the first resonator 100 is a 卍 or U-shaped sheet structure, and the second resonator 300 is a 卍 or U-shaped sheet structure. Wherein, the 卍 or 卐 shape may be formed on the upper and lower surfaces of the first dielectric layer 200 by chemical vapor deposition (CVD), physical vapor deposition (PVD), thereby forming 卍 or 卐The first resonator 100 and the second resonator 300 of a zigzag-like structure. Specifically, the 卍 or U-shaped sheet structure comprises a first metal strip and a second metal strip which are bent in two stages, the first metal strip and the second metal strip each comprise a main body section and a vertical extension from both ends of the main body section The extension is extended, and the two extensions connected to the same body segment extend in opposite directions. The main body section of the first metal strip and the main body section of the second metal strip are crisscrossed, and the extending directions of the four extending sections are sequentially changed clockwise by 90 degrees or sequentially by 90 degrees counterclockwise.
第一谐振器100与第二谐振器300的结构相同，第一谐振器100与第二谐振器300的尺寸呈放缩比例关系。其中，由于该卍或卐字形具有旋转对称性，同时第一谐振器100在第二谐振器300上投影后，第一谐振器100的投影与第二谐振器300的各边对应平行，基于此所制得的具有卍或卐字形片状结构的第一谐振器100和第二谐振器300也具有旋转对称性，使得对于多角度入射的太赫兹范围内的电磁波均保持较好的反射能力或衰减能力。另外，第一谐振器100和第二谐振器300的尺寸呈放缩关系，使得对所入射的太赫兹频段范围内的电磁波的谐振频率降低，从而起到拓宽带宽的作用。The first resonator 100 has the same structure as the second resonator 300, and the size of the first resonator 100 and the second resonator 300 are in a scaled relationship. Wherein, since the 卍 or 卐 shape has rotational symmetry, and the first resonator 100 is projected on the second resonator 300, the projection of the first resonator 100 is parallel to each side of the second resonator 300, based on The first resonator 100 and the second resonator 300 having a 卍 or U-shaped sheet structure are also provided with rotational symmetry, so that electromagnetic waves in the terahertz range incident at multiple angles maintain good reflection ability or Attenuation ability. In addition, the size of the first resonator 100 and the second resonator 300 are in a contracted relationship, so that the resonance frequency of the electromagnetic wave in the range of the incident terahertz band is lowered, thereby functioning to widen the bandwidth.
综上所述，上述基于超材料的太赫兹带阻滤波器单元，通过第一谐振器100、第一介质层200及第二谐振器300依次层叠设置，且将第一谐振器100和第二谐振器300均设为相同的卍或卐字形片状结构，由于卍或卐字形片状结构的旋转对称性，使得所制备的太赫兹带阻滤波器单元对太赫兹频段范围内的电磁波的入射方向不敏感，从而实现了宽角度入射，同时第一谐振器100与第二谐振器300的卍或卐字形片状结构的尺寸呈放缩关系，也起到拓宽可衰减或可反射的太赫兹频段范围的作用。In summary, the above-described metamaterial-based terahertz band rejection filter unit is sequentially stacked through the first resonator 100, the first dielectric layer 200, and the second resonator 300, and the first resonator 100 and the second resonator are disposed. The resonators 300 are all set to the same 卍 or U-shaped sheet-like structure, and the prepared terahertz band-rejection filter unit is incident on electromagnetic waves in the terahertz band due to the rotational symmetry of the 卍 or U-shaped sheet structure. The direction is insensitive, thereby achieving wide angle incidence, while the first resonator 100 is in a contracted relationship with the size of the meandering or 卐-shaped sheet structure of the second resonator 300, and also serves to broaden the attenuable or reflective terahertz. The role of the frequency range.
在一实施例中，放缩比例范围为0.85至0.95。优选地，放缩比例为0.9。具体地，第一谐振器100的面积大于第二谐振器300的面积，第一谐振器100与第二谐振器300之间各对应边的放缩比例为0.9，即第二谐振器300的面积只有第一谐振器100的0.9，该放缩比例可拓宽可衰减或可反射的太赫兹频段范围的带宽。In one embodiment, the scaling ratio ranges from 0.85 to 0.95. Preferably, the ratio of shrinkage is 0.9. Specifically, the area of the first resonator 100 is larger than the area of the second resonator 300, and the ratio of the respective sides of the first resonator 100 and the second resonator 300 is 0.9, that is, the area of the second resonator 300. Only 0.9 of the first resonator 100, the scaling ratio can broaden the bandwidth of the terahertz band that can be attenuated or reflected.
在一实施例中，请继续参考图1，第一介质层200层叠于第一谐振器100与 第二谐振器300之间，第一谐振器100与第二谐振器300对应的边均平行设置。也就是说，第一介质层200将第一谐振器100与第二谐振器300分离。同时，第一谐振器100的卍或卐字形片状结构与第二谐振器300的卍或卐字形片状结构所对应的各边均保持平行关系。In an embodiment, referring to FIG. 1 , the first dielectric layer 200 is stacked between the first resonator 100 and the second resonator 300 , and the sides of the first resonator 100 and the second resonator 300 are arranged in parallel. . That is, the first dielectric layer 200 separates the first resonator 100 from the second resonator 300. At the same time, the 卍 or U-shaped sheet structure of the first resonator 100 and the sides corresponding to the 卍 or U-shaped sheet structure of the second resonator 300 are maintained in a parallel relationship.
在一实施例中，第一谐振器100沿长度方向上的轴线在与第二谐振器300上的投影、与第二谐振器300沿长度方向上的轴线重叠。具体地，将第一谐振器100沿长度方向上的轴线投影在第二谐振器300上，该投影与第二谐振器300沿长度方向上的轴线重叠，从而使得第一谐振器100与第二谐振器300各对应边相互平行，即如果将第一谐振器100投影到第二谐振器300上，则第一谐振器100与第二谐振器300的中心重合且各对应边相互平行，使得第一谐振器100与第二谐振器300均呈旋转对称性结构，进而使该太赫兹带阻滤波器单元对电磁波的入射方向不敏感，可呈多角度入射。In an embodiment, the projection of the first resonator 100 along the lengthwise direction on the second resonator 300 overlaps the axis of the second resonator 300 in the length direction. Specifically, the first resonator 100 is projected on the second resonator 300 along the lengthwise axis, the projection overlapping the axis of the second resonator 300 in the longitudinal direction, thereby causing the first resonator 100 and the second The respective sides of the resonator 300 are parallel to each other, that is, if the first resonator 100 is projected onto the second resonator 300, the centers of the first resonator 100 and the second resonator 300 coincide and the respective sides are parallel to each other, so that Both the resonator 100 and the second resonator 300 have a rotational symmetry structure, so that the terahertz band rejection filter unit is insensitive to the incident direction of the electromagnetic wave and can be incident at multiple angles.
在一实施例中，请参考图3，太赫兹带阻滤波器还包括第二介质层400和第三谐振器500。第一谐振器100、第一介质层200、第二谐振器300、第二介质层400及第三谐振器500依次层叠设置。第三谐振器500与第一谐振器100和第二谐振器300的结构相同。In an embodiment, referring to FIG. 3, the terahertz band rejection filter further includes a second dielectric layer 400 and a third resonator 500. The first resonator 100, the first dielectric layer 200, the second resonator 300, the second dielectric layer 400, and the third resonator 500 are sequentially stacked. The third resonator 500 has the same structure as the first resonator 100 and the second resonator 300.
具体地，太赫兹带阻滤波器单元的结构为五层，从上到下层叠设置，依次为第一谐振器100、第一介质层200、第二谐振器300、第二介质层400及第三谐振器500，且第一谐振器100、第二谐振器300及第三谐振器500均为相同的卍或卐字形片状结构。该五层的太赫兹带阻滤波器单元可进一步拓宽可衰减或可反射的太赫兹频段范围内的电磁波。另外，太赫兹带阻滤波器单元的结构并不限于三层或五层，也可以是其他层数，只要层数增加能拓宽可衰减或可反射的太赫兹频段范围或对电磁波的入射方向不敏感即可。Specifically, the structure of the terahertz band rejection filter unit is five layers, which are stacked from top to bottom, and are, in order, the first resonator 100, the first dielectric layer 200, the second resonator 300, the second dielectric layer 400, and the The three resonators 500, and the first resonator 100, the second resonator 300, and the third resonator 500 are all of the same 卍 or U-shaped sheet structure. The five-layer terahertz band rejection filter unit further broadens the electromagnetic waves in the terahertz band that can be attenuated or reflected. In addition, the structure of the terahertz band-stop filter unit is not limited to three or five layers, and may be other layers, as long as the number of layers is increased to widen the range of the terahertz band that can be attenuated or reflected or not to the incident direction of electromagnetic waves. Sensitive.
更进一步地，第三谐振器500与第一谐振器100的结构完全相同，即第三谐振器500与第一谐振器100具有相同的卍或卐字形片状结构，而且该卍或卐字形片状结构的各对应边的尺寸也完全相同。另外，第一谐振器100的尺寸与第二谐振器300的尺寸在长宽方面按特定比例缩小，即第一谐振器100的面积大于第二谐振器300的面积。第二谐振器300的尺寸与第三谐振器500的尺寸 也按该特定比例缩小，且第二谐振器300的面积大于第三谐振器500的面积，或者第三谐振器500的尺寸与第一谐振器100或第二谐振器300的尺寸保持一致也可以。Further, the third resonator 500 is identical in structure to the first resonator 100, that is, the third resonator 500 has the same 卍 or U-shaped sheet structure as the first resonator 100, and the 卍 or 卐-shaped piece The dimensions of the respective sides of the structure are also identical. In addition, the size of the first resonator 100 and the size of the second resonator 300 are reduced in a specific ratio in terms of length and width, that is, the area of the first resonator 100 is larger than the area of the second resonator 300. The size of the second resonator 300 and the size of the third resonator 500 are also reduced by the specific ratio, and the area of the second resonator 300 is larger than the area of the third resonator 500, or the size of the third resonator 500 is the first It is also possible that the size of the resonator 100 or the second resonator 300 remains the same.
在一实施例中，第二介质层400层叠于第二谐振器300与第三谐振器500之间，第一谐振器100、第二谐振器300与第三谐振器500对应的边均平行设置。第一谐振器100沿长度方向上的轴线及第二谐振器300沿长度方向上的轴线在与第三谐振器上500的投影、与第三谐振器500沿长度方向上的轴线重叠。具体地，第一谐振器100、第一介质层200、第二谐振器300、第二介质层400及第三谐振器500依次层叠设置，且第一介质层200和第二介质层400的大小均可将第一谐振器100、第二谐振器300及第三谐振器500之间相隔离。而且第一谐振器100沿长度方向上的轴线及第二谐振器300沿长度方向上的轴线投影在第三谐振器500上，则两者的轴线投影均与第三谐振器500的轴线重叠，从而确保最大程度上对多入射的电磁波进行衰减或发射。In an embodiment, the second dielectric layer 400 is stacked between the second resonator 300 and the third resonator 500, and the sides of the first resonator 100, the second resonator 300, and the third resonator 500 are arranged in parallel. . The axis of the first resonator 100 along the length direction and the axis of the second resonator 300 along the length direction overlap with the projection of the third resonator 500 and the axis of the third resonator 500 in the longitudinal direction. Specifically, the first resonator 100, the first dielectric layer 200, the second resonator 300, the second dielectric layer 400, and the third resonator 500 are sequentially stacked, and the sizes of the first dielectric layer 200 and the second dielectric layer 400 are sequentially disposed. The first resonator 100, the second resonator 300, and the third resonator 500 may be isolated from each other. Moreover, the axis of the first resonator 100 along the longitudinal direction and the axis of the second resonator 300 along the length direction are projected on the third resonator 500, and the axis projections of both of them overlap with the axis of the third resonator 500. This ensures maximum attenuation or emission of multiple incident electromagnetic waves.
在一实施例中，第一谐振器100、第二谐振器300及第三谐振器500采用金属材料。该金属材料可以是金、银、铜、铁及铝等可导电的金属。In an embodiment, the first resonator 100, the second resonator 300, and the third resonator 500 are made of a metal material. The metal material may be an electrically conductive metal such as gold, silver, copper, iron or aluminum.
在一实施例中，第一谐振器100、第二谐振器300及第三谐振器500的厚度均处于0.4微米至0.6微米之间。优选地，第一谐振器100、第二谐振器300及第三谐振器500的厚度均0.5微米。In an embodiment, the thicknesses of the first resonator 100, the second resonator 300, and the third resonator 500 are each between 0.4 microns and 0.6 microns. Preferably, the thickness of the first resonator 100, the second resonator 300, and the third resonator 500 are both 0.5 micrometers.
在一实施例中，第一谐振器100的卍或卐字形片状结构包括十字形主体结构和四个短一字形自由端。十字形主体结构包括两个相互交叉的长一字形结构，两个长一字形结构相互交叉后形成四个连接端，四个短一字形自由端以顺时针或逆时针的方向一一对应抵接于十字形主体结构的四个连接端上。优选地，请参考图2及图4，两个相互交叉的长一字形结构呈相互垂直的关系，且两个长一字形结构相互垂直后形成四个连接端的长宽均相等。四个短一字形自由端以顺时针方向一一对应抵接于十字形主体结构的四个连接端上。其中，四个短一字形自由端与其所对应的十字形主体结构的四个连接端相互垂直，而且保持完全相同的结构。另外。第一谐振器100的卍字形片状结构也可如图5所示。In an embodiment, the meandering or U-shaped sheet structure of the first resonator 100 comprises a cross-shaped body structure and four short inscribed free ends. The cross-shaped main structure comprises two long straight-shaped structures crossing each other, and the two long-shaped one-shaped structures cross each other to form four connecting ends, and the four short-shaped free ends abut one-to-one in a clockwise or counterclockwise direction. On the four connecting ends of the cross-shaped main structure. Preferably, referring to FIG. 2 and FIG. 4, the two long in-line structures intersecting each other are perpendicular to each other, and the two long in-line structures are perpendicular to each other to form equal length and width of the four connecting ends. The four short inscribed free ends abut one-to-one in a clockwise direction on the four connecting ends of the cross-shaped main structure. Wherein, the four short inscribed free ends are perpendicular to the four connecting ends of the corresponding cross-shaped main structure, and maintain the same structure. Also. The U-shaped sheet structure of the first resonator 100 can also be as shown in FIG.
在一实施例中，十字形主体结构的长一字形结构的长度范围处于98微米至 102微米之间，四个短一字形自由端的长度范围处于38微米至42微米之间。长一字形结构的宽度与短一字形结构的宽度相等，厚度也相等。优选地，请继续参考图4，十字形主体结构的长一字形结构的长度L 1为100微米，四个短一字形自由端的长度L 2为40微米，长一字形结构的宽度W 1与短一字形结构的宽度W 2为13微米，厚度为0.5微米。 In one embodiment, the long inline structure of the cruciform body structure ranges from 98 microns to 102 microns in length, and the length of the four short inscribed free ends ranges from 38 microns to 42 microns. The width of the long inline structure is equal to the width of the short inline structure and the thickness is also equal. Preferably, referring to FIG. 4, the length L 1 of the long inline structure of the cruciform body structure is 100 micrometers, the length L 2 of the four short inscribed free ends is 40 micrometers, and the width W 1 and the length of the long inline structure are short. The in-line structure has a width W 2 of 13 μm and a thickness of 0.5 μm.
一实施方式提供了一种太赫兹带阻滤波器，包括上述的太赫兹带阻滤波器单元，太赫兹带阻滤波器单元呈M*N阵列排布，其中，M≥1，N≥1。优选地，该太赫兹带阻滤波器由太赫兹带阻滤波器单元周期性排列，形成6*6的阵列结构，如图6所示。An embodiment provides a terahertz band rejection filter comprising the above terahertz band rejection filter unit, the terahertz band rejection filter unit being arranged in an M*N array, wherein M≥1, N≥1. Preferably, the terahertz band stop filter is periodically arranged by the terahertz band rejection filter unit to form a 6*6 array structure, as shown in FIG.
利用三维电磁仿真软件进行太赫兹带阻滤波器单元的设计和优化，最终得到性能优异的太赫兹带阻滤波器。具体的太赫兹带阻滤波器单元模型参数设置如下，请参考图4，a＝150μm，L 1＝100μm，W 1＝W 2＝13μm，L 2＝40μm，h 1＝0.5μm(图中未标出，表示第一谐振器100和第二谐振器300的厚度)，h 2＝49μm(图中未标出，表示第一介质层200的厚度)，ε＝3.5(第一介质层200的介电常数)，tanδ＝0.0027(第一介质层200的损耗角正切值)，μ＝1(第一介质层200的磁导率)。该太赫兹带阻滤波器的边界条件为周期性阵列结构。同时，电磁波入射角度与该太赫兹带阻滤波器呈三维角度，以YZ平面为参考面，与Z轴中心线呈角度α，以XZ平面为参考面，绕Z轴旋转角度为β，角度示意图如图6所示。请参考图7，为该太赫兹带阻滤波器在电磁波宽角度(0°～45°)入射下的透射谱。从图中可以看出，随着入射角度的增大，该太赫兹带阻滤波器在工作频带内均表现出良好的稳定性。具体而言，在角度α＝0°时，中心频率f 0约等于0.57THz，在0.54～0.61THz范围内，该太赫兹带阻滤波器的透射系数达到-29dB，随着入射角度α的增大，带宽发生红移，并且透射系数呈下降趋势，可见，由于太赫兹电阻滤波单元的旋转对称性，此太赫兹带阻滤波器的结构为极化不敏感结构，进一步证明此太赫兹带阻滤波器结构可适用于多种复杂应用场景中。 The 3H electromagnetic simulation software is used to design and optimize the terahertz band-rejection filter unit, and finally the terahertz band rejection filter with excellent performance is obtained. The specific terahertz band-rejection filter unit model parameters are set as follows, please refer to Figure 4, a = 150μm, L 1 = 100μm, W 1 = W 2 = 13μm, L 2 = 40μm, h 1 = 0.5μm (not shown) Indicated, indicating the thickness of the first resonator 100 and the second resonator 300), h 2 = 49 μm (not shown in the drawing, indicating the thickness of the first dielectric layer 200), ε = 3.5 (of the first dielectric layer 200) Dielectric constant), tan δ = 0.0027 (loss tangent of the first dielectric layer 200), μ = 1 (permeability of the first dielectric layer 200). The boundary condition of the terahertz band rejection filter is a periodic array structure. At the same time, the incident angle of the electromagnetic wave is three-dimensionally angled with the terahertz band-stop filter, with the YZ plane as the reference surface, at an angle α with the Z-axis center line, with the XZ plane as the reference surface, and the rotation angle around the Z-axis is β, the angle diagram As shown in Figure 6. Please refer to FIG. 7 , which is a transmission spectrum of the terahertz band rejection filter at an electromagnetic wave width angle (0° to 45°). It can be seen from the figure that the terahertz band-stop filter exhibits good stability in the operating frequency band as the incident angle increases. Specifically, at an angle α=0°, the center frequency f 0 is approximately equal to 0.57 THz, and in the range of 0.54 to 0.61 THz, the transmission coefficient of the terahertz band rejection filter reaches -29 dB, which increases with the incident angle α. Large, the bandwidth is red-shifted, and the transmission coefficient is decreasing. It can be seen that due to the rotational symmetry of the terahertz resistance filtering unit, the structure of the terahertz band-stop filter is a polarization-insensitive structure, which further proves that the terahertz band resistance The filter structure can be adapted to a variety of complex application scenarios.
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技 术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。The technical features of the above-described embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be considered as the scope of this manual.
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。The above-described embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims (10)

  1. 一种基于超材料的太赫兹带阻滤波器单元，其特征在于，包括第一谐振器、第一介质层及第二谐振器；所述第一谐振器、所述第一介质层及所述第二谐振器依次层叠设置；所述第一谐振器为
    Figure PCTCN2018081336-appb-100001
    或
    Figure PCTCN2018081336-appb-100002
    字形片状结构，所述第二谐振器为
    Figure PCTCN2018081336-appb-100003
    或
    Figure PCTCN2018081336-appb-100004
    字形片状结构；所述第一谐振器与所述第二谐振器的结构相同，所述第一谐振器与所述第二谐振器的尺寸呈放缩比例关系。     A metamaterial-based terahertz band rejection filter unit, comprising: a first resonator, a first dielectric layer, and a second resonator; the first resonator, the first dielectric layer, and the a second resonator is sequentially stacked; the first resonator is
    Figure PCTCN2018081336-appb-100001
    or
    Figure PCTCN2018081336-appb-100002
    a glyph-like structure, the second resonator is
    Figure PCTCN2018081336-appb-100003
    or
    Figure PCTCN2018081336-appb-100004
    a zigzag-like structure; the first resonator is identical in structure to the second resonator, and the first resonator and the second resonator are in a scaled relationship.
  2. 根据权利要求1所述的太赫兹带阻滤波器单元，其特征在于，所述放缩比例范围为0.85至0.95。The terahertz band rejection filter unit according to claim 1, wherein the scaling ratio ranges from 0.85 to 0.95.
  3. 根据权利要求1所述的太赫兹带阻滤波器单元，其特征在于，所述第一介质层层叠于所述第一谐振器与所述第二谐振器之间，所述第一谐振器与所述第二谐振器对应的边均平行设置。The terahertz band rejection filter unit according to claim 1, wherein said first dielectric layer is laminated between said first resonator and said second resonator, said first resonator The corresponding sides of the second resonator are all arranged in parallel.
  4. 根据权利要求3所述的太赫兹带阻滤波器单元，其特征在于，所述第一谐振器沿长度方向上的轴线在与所述第二谐振器上的投影、与所述第二谐振器沿长度方向上的轴线重叠。The terahertz band rejection filter unit according to claim 3, wherein a projection of the first resonator along an axis in a length direction on the second resonator and the second resonator The axes along the length direction overlap.
  5. 根据权利要求1所述的太赫兹带阻滤波器单元，其特征在于，所述太赫兹带阻滤波器还包括第二介质层和第三谐振器；所述第一谐振器、所述第一介质层、所述第二谐振器、所述第二介质层及所述第三谐振器依次层叠设置；所述第一谐振器沿长度方向上的轴线及所述第二谐振器沿长度方向上的轴线在与所述第三谐振器上的投影、与所述第三谐振器沿长度方向上的轴线重叠。The terahertz band rejection filter unit according to claim 1, wherein the terahertz band rejection filter further comprises a second dielectric layer and a third resonator; the first resonator, the first The dielectric layer, the second resonator, the second dielectric layer, and the third resonator are sequentially stacked; the first resonator is along an axis in a length direction and the second resonator is along a length direction The axis of the projection overlaps the axis of the third resonator along the length of the third resonator.
  6. 根据权利要求4所述的太赫兹带阻滤波器单元，其特征在于，所述第二介质层层叠于所述第二谐振器与所述第三谐振器之间，所述第一谐振器、所述第二谐振器与所述第三谐振器对应的边均平行设置，且所述第一谐振器、所述第二谐振器及所述第三谐振器的中心在一条直线上。The terahertz band rejection filter unit according to claim 4, wherein said second dielectric layer is laminated between said second resonator and said third resonator, said first resonator, The sides of the second resonator corresponding to the third resonator are disposed in parallel, and the centers of the first resonator, the second resonator, and the third resonator are in a straight line.
  7. 根据权利要求4所述的太赫兹带阻滤波器单元，其特征在于，所述第一谐振器、所述第二谐振器及所述第三谐振器的厚度均处于0.4微米至0.6微米之间。The terahertz band rejection filter unit according to claim 4, wherein said first resonator, said second resonator, and said third resonator are each between 0.4 micrometers and 0.6 micrometers thick .
  8. 根据权利要求1所述的太赫兹带阻滤波器单元，其特征在于，所述第一谐振器的
    Figure PCTCN2018081336-appb-100005
    字形片状结构包括十字形主体结构和四个短一字形自由端；所述十 字形主体结构包括两个相互交叉的长一字形结构，所述两个长一字形结构相互交叉后形成四个连接端，所述四个短一字形自由端以顺时针或逆时针的方向一一对应抵接于所述十字形主体结构的四个连接端上。     The terahertz band rejection filter unit according to claim 1, wherein said first resonator
    Figure PCTCN2018081336-appb-100005
    The glyph-like structure comprises a cross-shaped main structure and four short inscribed free ends; the cross-shaped main structure comprises two long inscribed structures that intersect each other, the two long in-line structures intersecting each other to form four connections The four short inscribed free ends abut one another in a clockwise or counterclockwise direction on the four connecting ends of the cross-shaped body structure.
  9. 根据权利要求1所述的太赫兹带阻滤波器单元，其特征在于，所述十字形主体结构的长一字形结构的长度范围处于98微米至102微米之间，所述四个短一字形自由端的长度范围为38微米至42微米；所述长一字形结构的宽度与所述短一字形结构的宽度相等，厚度也相等。The terahertz band rejection filter unit according to claim 1, wherein the length of the long inline structure of the cruciform body structure ranges from 98 micrometers to 102 micrometers, and the four short inscribed shapes are free. The length of the end is in the range of 38 microns to 42 microns; the width of the long inline structure is equal to the width of the short inline structure and the thickness is also equal.
  10. 一种太赫兹带阻滤波器，其特征在于，包括权利要求1-9中任一项权利要求所述的太赫兹带阻滤波器单元，所述太赫兹带阻滤波器单元呈M*N阵列排布，其中，M≥1，N≥1。A terahertz band rejection filter, comprising the terahertz band rejection filter unit according to any one of claims 1-9, wherein the terahertz band rejection filter unit is in an M*N array Arrangement, where M≥1, N≥1.
PCT/CN2018/081336 2018-02-06 2018-03-30 Terahertz band stop filter unit based on metamaterial and terahertz band stop filter WO2019153465A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810118598.2 2018-02-06
CN201810118598.2A CN108376817A (en) 2018-02-06 2018-02-06 Terahertz bandstop filter unit based on Meta Materials and Terahertz bandstop filter

Publications (1)

Publication Number Publication Date
WO2019153465A1 true WO2019153465A1 (en) 2019-08-15

Family

ID=63017395

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/081336 WO2019153465A1 (en) 2018-02-06 2018-03-30 Terahertz band stop filter unit based on metamaterial and terahertz band stop filter

Country Status (2)

Country Link
CN (1) CN108376817A (en)
WO (1) WO2019153465A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109167136B (en) * 2018-08-23 2021-04-06 成都信息工程大学 Microstrip structure
CN109585984B (en) * 2018-10-26 2020-04-03 中山大学 Broadband band-stop filter without RLC periodic structure
CN110011008A (en) * 2019-03-31 2019-07-12 华南理工大学 A kind of Terahertz Broadband bandstop filter based on super surface
CN110048201B (en) * 2019-05-24 2020-10-13 中国计量大学上虞高等研究院有限公司 Multi-band terahertz band elimination filter
CN110277616B (en) * 2019-06-27 2021-01-08 南京理工大学 Swastika-type dual-passband band-pass filter based on vertical folding miniaturization
CN110767964A (en) * 2019-10-23 2020-02-07 南京航空航天大学 Tunable terahertz band-stop filter
CN111585033B (en) * 2020-05-25 2021-08-03 南通大学 Near-zero refractive index metamaterial with double stop bands
CN111769345B (en) * 2020-07-14 2022-06-28 合肥工业大学 Terahertz metamaterial filter
CN111769344B (en) * 2020-07-14 2022-02-22 合肥工业大学 Terahertz band elimination filter
CN114324345B (en) * 2021-11-01 2024-01-12 清华大学深圳国际研究生院 Material imaging method and device, terminal equipment and storage medium

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006064192A1 (en) * 2004-12-14 2006-06-22 The University Of Leeds Band stop filter
CN202034470U (en) * 2011-04-11 2011-11-09 中国计量学院 Terahertz wave filter with cyclical swastika-shaped hollow-out structure
CN202084616U (en) * 2011-04-01 2011-12-21 中国计量学院 Terahertz wave filter with periodical swastika-shaped hollowed-out structure
CN105048028A (en) * 2015-07-23 2015-11-11 北京交通大学 Terahertz filter and manufacturing method thereof
CN107045157A (en) * 2017-02-09 2017-08-15 东南大学 Fold cross Terahertz film filter and preparation method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106887710A (en) * 2017-03-07 2017-06-23 西安电子科技大学 Improve the frequency-selective surfaces structure of angle stability

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006064192A1 (en) * 2004-12-14 2006-06-22 The University Of Leeds Band stop filter
CN202084616U (en) * 2011-04-01 2011-12-21 中国计量学院 Terahertz wave filter with periodical swastika-shaped hollowed-out structure
CN202034470U (en) * 2011-04-11 2011-11-09 中国计量学院 Terahertz wave filter with cyclical swastika-shaped hollow-out structure
CN105048028A (en) * 2015-07-23 2015-11-11 北京交通大学 Terahertz filter and manufacturing method thereof
CN107045157A (en) * 2017-02-09 2017-08-15 东南大学 Fold cross Terahertz film filter and preparation method

Also Published As

Publication number Publication date
CN108376817A (en) 2018-08-07

Similar Documents

Publication Publication Date Title
WO2019153465A1 (en) Terahertz band stop filter unit based on metamaterial and terahertz band stop filter
Sabah et al. Design of a terahertz polarization rotator based on a periodic sequence of chiral-metamaterial and dielectric slabs
CN110196464A (en) A kind of a kind of method and composite microstructure for realizing that ultra-wideband-light absorbs
CN105206904B (en) Bi-pass band frequency selective surface based on the high low damage all dielectric Meta Materials that are situated between
CN104779447A (en) Structure of broadband wave absorber and preparation method
WO2019210717A1 (en) Band-stop filter
WO2019153456A1 (en) Terahertz band-pass filter
Zhou et al. Independently controllable dual-band terahertz metamaterial absorber exploiting graphene
CN109873254A (en) A kind of broadband Meta Materials wave absorbing device
CN110034407A (en) A kind of wave transparent/stealthy integrated metamaterial structure
CN108279451A (en) A kind of broadband Meta Materials wave absorbing device that infrared band polarizes insensitive
CN107807416A (en) A kind of high efficiency broadband mirrors based on isotropism ceramics metamaterial
CN112350071A (en) Reflective terahertz polarization converter
Wang et al. High-performance and broadband chirality-dependent absorber based on planar spiral metasurface
Dong et al. Conformal transparent metamaterials inducing ultra-broadband absorption and polarization conversion
CN209045776U (en) A kind of super wideband and tunable THz wave absorbing device based on vanadium dioxide phase-change material
CN106299674B (en) A kind of frequency-selective surfaces antenna house bandwidth compensation method
CN106129549B (en) A kind of air chamber frequency-selective surfaces structure
WO2019165874A1 (en) Terahertz bandstop filter
Serebryannikov et al. One-way absorption of terahertz waves in rod-type and multilayer structures containing polar dielectrics
Ao et al. Terahertz band-pass filters based on fishnet metamaterials fabricated on free-standing SiNx membrane
CN109521505B (en) Optical absorption multilayer film
Chen et al. Low-frequency acoustic metasurface containing series-type resonators with curled necks
CN111900545B (en) High-directionality plano-concave lens containing ENZ metamaterial sandwich layer with non-uniform thickness
Liang et al. Terahertz narrow bandstop, broad bandpass filter using double-layer S-shaped metamaterials

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18904536

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18904536

Country of ref document: EP

Kind code of ref document: A1