WO2019141190A1 - Method and device for controlling power supply of power amplifier - Google Patents
Method and device for controlling power supply of power amplifier Download PDFInfo
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- WO2019141190A1 WO2019141190A1 PCT/CN2019/071976 CN2019071976W WO2019141190A1 WO 2019141190 A1 WO2019141190 A1 WO 2019141190A1 CN 2019071976 W CN2019071976 W CN 2019071976W WO 2019141190 A1 WO2019141190 A1 WO 2019141190A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- the present invention relates to the field of communications, and in particular, to a power amplifier power supply control method and apparatus.
- the power amplifier commonly used in the field of radio frequency is mainly LDMOS (Lateral double-diffused metal-oxide semiconductor).
- LDMOS Longeral double-diffused metal-oxide semiconductor
- GaN gallium nitride
- a new material can further improve efficiency and frequency bands.
- GaN is a third-generation semiconductor material with broadband semiconductor characteristics, high saturation electron mobility, and higher breakdown voltage.
- GaN materials also have high thermal conductivity, which allows GaN power amplifier tubes to withstand higher temperatures. Higher power capacity.
- the Vg (gate voltage) and Vd (drain voltage) of the GaN power amplifier have strict requirements on the power-on and power-off timing. For details, see Figure 1. When power-on, Vd needs to wait for Vg to drop to V1 before powering up. When Vg rises to V2, the Vd voltage needs to drop below V3.
- the prior art provides a method for realizing GaN power-up and timing, as shown in FIG. 2 .
- the technology controls a slow-start chip through Vg, and the MOS (metal oxide semiconductor) switch on the Vd line is controlled by the slow-start chip, and the Vg needs to place a large-capacity storage capacitor to meet the power-down timing.
- the disadvantage of this scheme is that the slow-start chip, MOS and large-capacity storage capacitor have large footprint and high cost, and MOS is easy to fail when over-current or short-circuit occurs in the latter stage. At the same time, the capacity of the large-capacity storage capacitor is high in the power amplifier.
- the environment is also a big problem.
- the power amplifier power supply control method and device provided by the embodiment of the invention solve the problem that the power supply timing of the power amplifier Vg and Vd has low reliability, large board area and high cost.
- the input voltage is converted into a gate voltage for supplying power to the power amplifier gate;
- the input voltage is converted into a drain voltage for supplying the drain level.
- the converting the input voltage into a gate voltage for powering the power amplifier gate comprises:
- the gate voltage conversion module converts the input voltage into the gate voltage and outputs to the gate of the power amplifier.
- the determining whether the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered includes:
- the drain undervoltage shutdown unit determines that the input voltage rises to a drain undervoltage protection point, determining that the trigger is satisfied Power amplifier leakage level power requirements.
- the method further includes:
- the start time of controlling the gate power-off is delayed from the start time of the drain power-down.
- controlling a start time of the gate power-off lags a start time of the drain-level power-down includes:
- the drain-voltage conversion module stops converting the input voltage into the power for powering the drain Leaking the voltage to cause the drain to be powered down;
- the gate voltage conversion module stops converting the input voltage to be used to power the gate The gate voltage causes the gate to be powered down;
- the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
- the power amplifier is a GaN power amplifier or an LDMOS power amplifier or a GaAs power amplifier.
- a gate voltage conversion module configured to convert an input voltage into a gate voltage for powering a power amplifier gate when the power amplifier is powered on;
- a leakage voltage triggering module configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level
- a leakage voltage conversion module configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.
- the device further comprises:
- a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point
- the gate voltage conversion module converts the input voltage into the gate voltage, and outputs To the gate of the power amplifier.
- the leakage pressure triggering module comprises:
- An enabling unit configured to determine whether the gate voltage drops to a trigger point for supplying the drain level
- a drain-voltage undervoltage shutdown unit for determining whether the input voltage rises to a leakage undervoltage protection point
- the drain undervoltage shutdown unit determines that the input voltage rises to the drain undervoltage protection
- the drain voltage conversion module converts the input voltage into the drain voltage
- the drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the leakage undervoltage protection point;
- the gate undervoltage shutdown module is further configured to determine whether the input voltage drops to less than the gate voltage undervoltage protection point of the drain undervoltage protection point;
- the drain-voltage conversion module stops converting the input voltage into a power supply for the drain The drain voltage is powered down; if the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops Converting the input voltage to the gate voltage for powering the gate to power down the gate;
- the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
- the embodiment of the invention saves the slow start circuit, the MOS and Vg output large-capacity storage capacitors on the Vd line under the premise of satisfying the power-on and power-off timing of the power amplifier, improves the circuit reliability, and saves the board area and cost.
- Figure 1 is the power supply timing required for GaN power amplifiers Vg and Vd;
- FIG. 3 is a flowchart of power-on control of a power amplifier according to an embodiment of the present invention.
- FIG. 4 is a flowchart of a power amplifier power-off control according to an embodiment of the present invention.
- FIG. 5 is a block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention.
- FIG. 6 is a working block diagram of a power amplifier power supply control device according to an embodiment of the present invention.
- FIG. 7 is a flowchart of the power-on and power-off sequence operation according to the embodiment of the present invention.
- FIG. 3 is a flowchart of power-on control of a power amplifier according to an embodiment of the present invention. As shown in FIG. 3, the steps include:
- Step S101 When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate.
- the gate voltage conversion module converts the input voltage Vin into the gate voltage Vg, and outputs To the gate of the power amplifier. Further, if Vin is greater than or equal to Vuvlo2, the gate voltage conversion module operates to perform voltage conversion.
- Step S102 Determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level.
- the drain undervoltage shutdown unit determines that the input voltage Vin rises to the drain undervoltage protection point Vuvlo1, then determining The requirement for triggering the power leakage level of the power amplifier is met. Further, if Vg is less than or equal to V1, and Vin is greater than or equal to Vuvlo1, it is determined that the requirement to trigger the power amplifier drain level to be powered up is satisfied.
- Step S103 If it is determined that the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level, converting the input voltage into a drain voltage for supplying the drain level.
- the drain voltage conversion module converts the input voltage Vin into a drain-level voltage Vd for supplying the drain level, and outputs the The leakage level of the power amplifier.
- the embodiment of the present invention may further control that the power amplifier is powered off, specifically, according to the gate voltage undervoltage protection point and the leakage undervoltage protection point, controlling a start time of the gate power failure to lag behind the drain The start time of the stage power-down to meet the power-down timing requirements of the power amplifier.
- FIG. 4 is a flowchart of power-off control of a power amplifier according to an embodiment of the present invention, as shown in FIG. 4, including:
- Step S201 If the drain-voltage undervoltage shutdown unit determines that the input voltage Vin falls to the drain-voltage undervoltage protection point Vuvlo1, the leakage voltage conversion module stops converting the input voltage Vin into The drain-level voltage Vd supplied from the drain causes the drain to be powered down. That is, if Vin is smaller than Vuvlo1, the gate voltage conversion module is turned off.
- Step S202 after the drain stage starts to be powered down, the input voltage Vin drops until the gate voltage undervoltage protection point falls, then the gate voltage conversion module stops converting the input voltage Vin into The gate voltage Vg that supplies the gate causes the gate to be powered down. That is, if Vin is less than Vuvlo2, the gate voltage conversion module is turned off.
- the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
- FIG. 5 is a block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention. As shown in FIG. 5, the method specifically includes:
- the gate voltage conversion module is used to convert the input voltage into a gate voltage for powering the power amplifier gate when the power amplifier is powered on.
- the leakage voltage triggering module is configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level.
- a leakage voltage conversion module configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.
- the apparatus also includes a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point.
- the leakage pressure trigger module includes:
- An enabling unit configured to determine whether the gate voltage drops to a trigger point for supplying the drain level
- a drain-voltage undervoltage shutdown unit is configured to determine whether the input voltage rises to a drain undervoltage protection point.
- the workflow of the device includes: if the gate voltage undervoltage shutdown module determines that the input voltage Vin rises to the gate voltage undervoltage protection point Vuvlo2, the gate voltage conversion module converts the input voltage Vin into a The gate voltage Vg is output to the gate of the power amplifier. As the input voltage Vin rises, Vg decreases, and if the enabling unit determines that the gate voltage Vg falls to the trigger point V1 for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage Vin rises to The leakage undervoltage protection point Vuvlo1 is judged to meet the requirement of triggering the power amplifier leakage level to be powered. At this time, the leakage voltage conversion module converts the input voltage Vin into a drain voltage Vd for supplying the drain level. And output to the drain level of the power amplifier.
- the embodiment of the invention utilizes Vg to enable the input power of the power amplifier drain stage, and can meet the power-on timing requirements of the power amplifier.
- drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the drain-voltage undervoltage protection point
- the gate under-voltage shutdown module is further configured to determine whether the input voltage is Drop to the gate voltage undervoltage protection point.
- the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
- the working process of the device includes: if the leakage undervoltage shutdown unit determines that the input voltage Vin falls to the leakage undervoltage protection point Vuvlo1, the leakage pressure conversion module stops the input Converting a voltage Vin to the drain voltage Vd for powering the drain, causing the drain to be powered down; as the input voltage Vin drops, if the gate undervoltage shutdown module determines The input voltage Vin drops to be less than the gate voltage undervoltage protection point Vuvlo2 of the drain undervoltage protection point Vuvlo1, then the gate voltage conversion module stops converting the input voltage Vin into a power supply for the gate The gate voltage Vg causes the gate to be powered down.
- the drain level is powered off in advance, so that the power amplifier timing sequence can be met.
- the units and modules involved in the embodiments of FIG. 3, FIG. 4 and FIG. 5 can all adopt existing circuits or chips.
- the enabling unit can adopt a voltage dividing circuit, a leakage voltage conversion module and a drain-voltage undervoltage shutdown unit.
- a voltage converter with its own undervoltage lockout function can be used, and will not be described here.
- the power amplifiers involved in the embodiments of FIG. 3, FIG. 4, and FIG. 5 may be GaN power amplifiers, LDMOS power amplifiers, GaAs power amplifiers, and the like.
- the input voltage Vin involved in the embodiments of FIG. 3, FIG. 4 and FIG. 5 may be an input voltage of a system using a GaN power amplifier, an LDMOS power amplifier, a GaAs power amplifier or the like.
- FIG. 6 is a working block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention. As shown in FIG. 6, the following modules are included:
- Voltage conversion unit 1 (corresponding to the leakage voltage conversion module of FIG. 5): converting Vin (input voltage) into Vd;
- UVLO Under Voltage Lock Out 1 (corresponding to the drain-voltage undervoltage shutdown unit of FIG. 5): a necessary condition for the operation of the voltage conversion unit 1;
- the enabling unit (corresponding to the enabling unit of FIG. 5): a necessary condition for the voltage converting unit 1 to operate;
- Voltage conversion unit 2 (corresponding to the gate voltage conversion module of FIG. 5): converting Vin into Vg;
- UVLO2 (corresponding to the gate voltage undervoltage shutdown module of Fig. 5): a necessary condition for the operation of the voltage conversion unit 2.
- the step of controlling the power-on and power-off sequence of the power amplifier includes:
- the first step when power is applied, when Vin rises to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 operates, and Vg starts to be established;
- Step 2 When Vg falls to V1, the enable circuit operates, the voltage conversion unit 1 operates, and Vd starts to be established to meet the power-on sequence;
- the third step when the power is off, when Vin drops to Vuvlo1, the UVLO1 circuit operates, the voltage conversion unit 1 stops working, and Vd starts to lose power;
- Step 4 When Vin drops to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 stops working, and Vg starts to lose power;
- Step 5 When Vg rises to V2, the Vd value is less than V3, which satisfies the power-down sequence.
- the embodiment of the present invention provides a power amplifier timing control strategy implemented by a dual independent power supply, and provides a control power amplifier, which is provided in the prior art, which has a complicated control and low reliability of the timing control circuit of the power amplifier.
- the strategy of power-on and power-down timing, the gate voltage and the leakage voltage of the power amplifier are respectively converted by independent power sources, wherein the gate voltage is used to control the enable of the leakage voltage power supply to meet the power-on timing; when the power is off, the gate voltage undervoltage protection can be achieved.
- the point is lower than the leakage voltage undervoltage protection point to allow the leakage voltage to be prematurely de-energized to meet the power-down timing requirements.
- the embodiments of the present invention are applicable to all power amplifiers that require gate voltage timing, and are not limited to GaN, but also include all power amplifiers such as LDMOS, GaAs, and other applications of all GaN and GaAs tubes.
- the hardware system includes: a voltage conversion unit 1, a UVLO1, an enable unit, a voltage conversion unit 2, and a UVLO2.
- Vin is the system input voltage
- Vd is the output voltage of the voltage conversion unit 1, and supplies power to the GaN power amplifier drain
- Vg is the output voltage of the voltage conversion unit 2, and supplies power to the GaN power amplifier gate.
- the UVLO1 and the enabling unit are necessary conditions for the voltage converting unit 1 to operate, and when both are provided, the voltage converting unit 1 can output Vd; and if any of the conditions is not provided, the voltage converting unit 1 does not operate.
- UVLO2 is a necessary condition for the voltage conversion unit 2 to operate.
- the enabling unit is controlled by Vg, and when Vg is lower than the voltage V1, the enabling unit enables the voltage converting unit 1 to operate; when Vg is higher than the voltage V1, the enabling unit turns off the voltage converting unit 1 to operate.
- Step 1 Vin is powered on. When Vin rises to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 operates, and outputs Vg.
- Step 2 Vin continues to rise to Vuvlo1.
- the UVLO1 circuit operates. If Vg is already lower than V1 at this time, the enable circuit has also been activated. When both are available, the voltage conversion unit 1 operates and outputs Vd; If Vg is still greater than V1, it is necessary to wait for Vg to be lower than V1 before outputting Vd to meet the power-on sequence;
- Step 3 When Vin is powered down, when Vin ⁇ Vuvlo1, the UVLO1 circuit operates, the voltage conversion unit 1 is turned off, and Vd starts to be powered down;
- Step 4 After the voltage conversion unit 1 is turned off, since the output Vg load of the power conversion unit 2 is small, the Vin falls very slowly at this time;
- Step 5 When Vin slowly drops to Vin ⁇ Vuvlo2, the voltage conversion unit 2 is turned off, and Vg starts to climb;
- Step 6 When Vg climbs to V2, only Vd ⁇ V3 is required to satisfy the power-down sequence.
- this embodiment can easily realize the GaN power supply timing and ensure the safety of the GaN power amplifier tube during power-on and power-off.
- the embodiments of the present invention are applicable to the strict power-on and power-down timing control of a GaN HEMT (High Electron Mobility Transistor, GaN-based material) power amplifier, especially the application of a GaN power amplifier in the communication field.
- GaN HEMT High Electron Mobility Transistor, GaN-based material
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Abstract
A method and a device for controlling power supply of a power amplifier, pertaining to the field of communications. The method comprises: upon energization of a power amplifier, converting an input voltage into a gate voltage for supplying power to a gate of the power amplifier (S101); determining whether the gate voltage meets a voltage requirement for triggering energization of a drain of the power amplifier (S102); and if so, converting the input voltage into a drain voltage for supplying power to the drain (S103). The invention eliminates the need for a delay start circuit, a MOS transistor on a Vd line, or an output large-capacity energy storage capacitor for Vg while meeting the requirement for an energization and de-energization timing sequence of a power amplifier, thereby improving circuit reliability, and reducing the area and cost of a single board.
Description
本申请要求享有2018年1月16日提交的名称为“一种功放供电控制方法及装置”的中国专利申请CN201810037692.5的优先权,其全部内容通过引用并入本文中。The present application claims priority to Chinese Patent Application No. CN201810037692.5, filed on Jan. 16, s.
本发明涉及通信领域,特别涉及一种功放供电控制方法及装置。The present invention relates to the field of communications, and in particular, to a power amplifier power supply control method and apparatus.
目前,在射频领域常用的功率放大器主要是LDMOS(Lateral double-diffused metal-oxide semiconductor,横向扩散金属氧化物半导体场效应管),此类功放管技术已相对成熟,效率和频段的提升相对较难,而GaN(氮化镓)这种新的材料则能够将效率和频段进一步提升。GaN为第三代半导体材料,具有宽带半导体特性、高饱和电子迁移率以及更高的击穿电压;同时GaN材料还具备很高的热传导特性,这使得GaN功放管能够承受更高的温度,具有更高的功率容量。但是GaN功放的Vg(栅极电压)及Vd(漏极电压)的上下电时序有严格的要求,具体见图1,上电时,Vd需等Vg下降到V1后才可上电;下电时,Vg在上升到V2时,Vd电压需下降至V3以下。At present, the power amplifier commonly used in the field of radio frequency is mainly LDMOS (Lateral double-diffused metal-oxide semiconductor). Such power amplifier tube technology is relatively mature, and the efficiency and frequency band increase are relatively difficult. And GaN (gallium nitride), a new material, can further improve efficiency and frequency bands. GaN is a third-generation semiconductor material with broadband semiconductor characteristics, high saturation electron mobility, and higher breakdown voltage. GaN materials also have high thermal conductivity, which allows GaN power amplifier tubes to withstand higher temperatures. Higher power capacity. However, the Vg (gate voltage) and Vd (drain voltage) of the GaN power amplifier have strict requirements on the power-on and power-off timing. For details, see Figure 1. When power-on, Vd needs to wait for Vg to drop to V1 before powering up. When Vg rises to V2, the Vd voltage needs to drop below V3.
现有技术给出了一种实现GaN上下电时序方法,具体见图2。该技术通过Vg控制一颗缓启动芯片,由缓启动芯片来控制Vd线上的MOS(metal oxide semiconductor,金属氧化物半导体)开关,同时Vg需放置大容量储能电容以满足下电时序。该方案的弊端在于缓启动芯片、MOS以及大容量储能电容的占板面积大,成本高,且MOS在后级发生过流或者短路状态时容易失效,同时大容量储能电容寿命在功放高温环境下也是一大难题。The prior art provides a method for realizing GaN power-up and timing, as shown in FIG. 2 . The technology controls a slow-start chip through Vg, and the MOS (metal oxide semiconductor) switch on the Vd line is controlled by the slow-start chip, and the Vg needs to place a large-capacity storage capacitor to meet the power-down timing. The disadvantage of this scheme is that the slow-start chip, MOS and large-capacity storage capacitor have large footprint and high cost, and MOS is easy to fail when over-current or short-circuit occurs in the latter stage. At the same time, the capacity of the large-capacity storage capacitor is high in the power amplifier. The environment is also a big problem.
发明内容Summary of the invention
本发明实施例提供的一种功放供电控制方法及装置,解决现有方案中功放的Vg及Vd的供电时序可靠性低,占板面积大,成本高的问题。The power amplifier power supply control method and device provided by the embodiment of the invention solve the problem that the power supply timing of the power amplifier Vg and Vd has low reliability, large board area and high cost.
根据本发明实施例提供的一种功放供电控制方法,包括:A power amplifier power supply control method according to an embodiment of the present invention includes:
功放上电时,将输入电压转换为用于为功放栅极供电的栅极电压;When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate;
判断所述栅极电压是否满足触发所述功放漏级上电的电压要求;Determining whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;
若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则将所述输入电压转换为用于为所述漏级供电的漏级电压。If it is determined that the gate voltage satisfies a voltage requirement for triggering power-on of the power amplifier drain level, the input voltage is converted into a drain voltage for supplying the drain level.
优选地,所述将输入电压转换为用于为功放栅极供电的栅极电压包括:Preferably, the converting the input voltage into a gate voltage for powering the power amplifier gate comprises:
若栅压欠压关断模块确定所述输入电压上升至栅压欠压保护点,则栅压转换模块将所述输入电压转换为所述栅极电压,并输出至所述功放的栅极。If the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage and outputs to the gate of the power amplifier.
优选地,所述判断所述栅极电压是否满足触发所述功放漏级上电的电压要求包括:Preferably, the determining whether the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered includes:
若使能单元确定所述栅极电压下降至为所述漏级供电的触发点,且漏压欠压关断单元确定所述输入电压上升至漏压欠压保护点,则判断满足触发所述功放漏级上电的要求。If the enabling unit determines that the gate voltage drops to a trigger point for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage rises to a drain undervoltage protection point, determining that the trigger is satisfied Power amplifier leakage level power requirements.
优选地,所述方法还包括:Preferably, the method further includes:
所述功放下电时,根据所述栅压欠压保护点和所述漏压欠压保护点,控制所述栅极掉电的起始时间滞后于所述漏级掉电的起始时间。When the power amplifier is powered off, according to the gate voltage undervoltage protection point and the drain undervoltage protection point, the start time of controlling the gate power-off is delayed from the start time of the drain power-down.
优选地,所述根据所述栅压欠压保护点和所述漏压欠压保护点,控制所述栅极掉电的起始时间滞后于所述漏级掉电的起始时间包括:Preferably, according to the gate voltage undervoltage protection point and the drain undervoltage protection point, controlling a start time of the gate power-off lags a start time of the drain-level power-down includes:
若所述漏压欠压关断单元确定所述输入电压下降至所述漏压欠压保护点,则漏压转换模块停止将所述输入电压转换为用于为所述漏极供电的所述漏级电压,使所述漏级掉电;If the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into the power for powering the drain Leaking the voltage to cause the drain to be powered down;
若所述栅极欠压关断模块确定所述输入电压下降至所述栅压欠压保护点,则所述栅压转换模块停止将所述输入电压转换为用于为所述栅极供电的所述栅极电压,使所述栅极掉电;If the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops converting the input voltage to be used to power the gate The gate voltage causes the gate to be powered down;
其中,所述栅压欠压保护点小于所述漏压欠压保护点。Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
优选地,所述功放是GaN功放或LDMOS功放或GaAs功放。Preferably, the power amplifier is a GaN power amplifier or an LDMOS power amplifier or a GaAs power amplifier.
根据本发明实施例提供的一种功放供电控制装置,包括:A power amplifier power supply control apparatus according to an embodiment of the invention includes:
栅压转换模块,用于功放上电时,将输入电压转换为用于为功放栅极供电的栅极电压;a gate voltage conversion module, configured to convert an input voltage into a gate voltage for powering a power amplifier gate when the power amplifier is powered on;
漏压触发模块,用于判断所述栅极电压是否满足触发所述功放漏级上电的电压要 求;a leakage voltage triggering module, configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;
漏压转换模块,用于若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则将所述输入电压转换为用于为所述漏级供电的漏级电压。And a leakage voltage conversion module, configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.
优选地,所述装置还包括:Preferably, the device further comprises:
栅压欠压关断模块,用于确定所述输入电压是否上升至栅压欠压保护点;a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point;
其中,若所述栅压欠压关断模块确定所述输入电压上升至所述栅压欠压保护点,则所述栅压转换模块将所述输入电压转换为所述栅极电压,并输出至所述功放的栅极。Wherein, if the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage, and outputs To the gate of the power amplifier.
优选地,所述漏压触发模块包括:Preferably, the leakage pressure triggering module comprises:
使能单元,用于确定所述栅极电压是否下降至为所述漏级供电的触发点;An enabling unit, configured to determine whether the gate voltage drops to a trigger point for supplying the drain level;
漏压欠压关断单元,用于确定所述输入电压是否上升至漏压欠压保护点;a drain-voltage undervoltage shutdown unit for determining whether the input voltage rises to a leakage undervoltage protection point;
其中,若所述使能单元确定所述栅极电压下降至为所述漏级供电的触发点,且所述漏压欠压关断单元确定所述输入电压上升至所述漏压欠压保护点,则所述漏压转换模块将所述输入电压转换为所述漏极电压。Wherein, if the enabling unit determines that the gate voltage drops to a trigger point for supplying power to the drain stage, and the drain undervoltage shutdown unit determines that the input voltage rises to the drain undervoltage protection And the drain voltage conversion module converts the input voltage into the drain voltage.
优选地,所述漏压欠压关断单元还用于确定所述输入电压是否下降至所述漏压欠压保护点;Preferably, the drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the leakage undervoltage protection point;
所述栅极欠压关断模块还用于确定所述输入电压是否下降至小于所述漏压欠压保护点的所述栅压欠压保护点;The gate undervoltage shutdown module is further configured to determine whether the input voltage drops to less than the gate voltage undervoltage protection point of the drain undervoltage protection point;
其中,若所述漏压欠压关断单元确定所述输入电压下降至所述漏压欠压保护点,则漏压转换模块停止将所述输入电压转换为用于为所述漏极供电的所述漏级电压,使所述漏级掉电;若所述栅极欠压关断模块确定所述输入电压下降至所述栅压欠压保护点,则所述栅压转换模块停止将所述输入电压转换为用于为所述栅极供电的所述栅极电压,使所述栅极掉电;Wherein, if the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-voltage undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into a power supply for the drain The drain voltage is powered down; if the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops Converting the input voltage to the gate voltage for powering the gate to power down the gate;
其中,所述栅压欠压保护点小于所述漏压欠压保护点。Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
本发明实施例提供的技术方案具有如下有益效果:The technical solution provided by the embodiment of the invention has the following beneficial effects:
本发明实施例在满足功放上下电时序的前提下,节省了缓启动电路、Vd线上MOS及Vg输出大容量储能电容,提高了电路可靠性,节省了单板面积及成本。The embodiment of the invention saves the slow start circuit, the MOS and Vg output large-capacity storage capacitors on the Vd line under the premise of satisfying the power-on and power-off timing of the power amplifier, improves the circuit reliability, and saves the board area and cost.
图1是GaN功放Vg及Vd需满足的供电时序;Figure 1 is the power supply timing required for GaN power amplifiers Vg and Vd;
图2是现有技术提供的工作框图;2 is a working block diagram provided by the prior art;
图3是本发明实施例提供的功放上电控制流程图;3 is a flowchart of power-on control of a power amplifier according to an embodiment of the present invention;
图4是本发明实施例提供的功放下电控制流程图;4 is a flowchart of a power amplifier power-off control according to an embodiment of the present invention;
图5是本发明实施例提供的功放供电控制装置框图;5 is a block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention;
图6是本发明实施例提供的功放供电控制装置的工作框图;6 is a working block diagram of a power amplifier power supply control device according to an embodiment of the present invention;
图7是本发明实施例提供的上下电时序动作流程图。FIG. 7 is a flowchart of the power-on and power-off sequence operation according to the embodiment of the present invention.
以下结合附图对本发明的优选实施例进行详细说明,应当理解,以下所说明的优选实施例仅用于说明和解释本发明,并不用于限定本发明。The preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings.
图3是本发明实施例提供的功放上电控制流程图,如图3所示,步骤包括:FIG. 3 is a flowchart of power-on control of a power amplifier according to an embodiment of the present invention. As shown in FIG. 3, the steps include:
步骤S101:功放上电时,将输入电压转换为用于为功放栅极供电的栅极电压。Step S101: When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate.
上电时,若栅压欠压关断模块确定所述输入电压Vin上升至栅压欠压保护点Vuvlo2,则栅压转换模块将所述输入电压Vin转换为所述栅极电压Vg,并输出至所述功放的栅极。进一步说,若Vin大于或等于Vuvlo2,则栅压转换模块工作,进行电压转换。At the time of power-on, if the gate voltage undervoltage shutdown module determines that the input voltage Vin rises to the gate voltage undervoltage protection point Vuvlo2, the gate voltage conversion module converts the input voltage Vin into the gate voltage Vg, and outputs To the gate of the power amplifier. Further, if Vin is greater than or equal to Vuvlo2, the gate voltage conversion module operates to perform voltage conversion.
步骤S102:判断所述栅极电压是否满足触发所述功放漏级上电的电压要求。Step S102: Determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level.
若使能单元确定所述栅极电压Vg下降至为所述漏级供电的触发点V1,且漏压欠压关断单元确定所述输入电压Vin上升至漏压欠压保护点Vuvlo1,则判断满足触发所述功放漏级上电的要求。进一步说,若Vg小于或等于V1,且Vin大于或等于Vuvlo1,则判断满足触发所述功放漏级上电的要求。If the enabling unit determines that the gate voltage Vg falls to the trigger point V1 for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage Vin rises to the drain undervoltage protection point Vuvlo1, then determining The requirement for triggering the power leakage level of the power amplifier is met. Further, if Vg is less than or equal to V1, and Vin is greater than or equal to Vuvlo1, it is determined that the requirement to trigger the power amplifier drain level to be powered up is satisfied.
步骤S103:若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则将所述输入电压转换为用于为所述漏级供电的漏级电压。Step S103: If it is determined that the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level, converting the input voltage into a drain voltage for supplying the drain level.
若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则漏压转换模块将所述输入电压Vin转换为用于为所述漏级供电的漏级电压Vd,并输出至所述功放的漏级。If it is determined that the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain stage, the drain voltage conversion module converts the input voltage Vin into a drain-level voltage Vd for supplying the drain level, and outputs the The leakage level of the power amplifier.
本发明实施例还可以控制所述功放下电,具体是根据所述栅压欠压保护点和所述漏压欠压保护点,控制所述栅极掉电的起始时间滞后于所述漏级掉电的起始时间,以满足 功放下电时序要求。图4是本发明实施例提供的功放下电控制流程图,如图4所示,包括:The embodiment of the present invention may further control that the power amplifier is powered off, specifically, according to the gate voltage undervoltage protection point and the leakage undervoltage protection point, controlling a start time of the gate power failure to lag behind the drain The start time of the stage power-down to meet the power-down timing requirements of the power amplifier. FIG. 4 is a flowchart of power-off control of a power amplifier according to an embodiment of the present invention, as shown in FIG. 4, including:
步骤S201:若所述漏压欠压关断单元确定所述输入电压Vin下降至所述漏压欠压保护点Vuvlo1,则漏压转换模块停止将所述输入电压Vin转换为用于为所述漏极供电的所述漏级电压Vd,使所述漏级掉电。也就是说,若Vin小于Vuvlo1,则栅压转换模块关断。Step S201: If the drain-voltage undervoltage shutdown unit determines that the input voltage Vin falls to the drain-voltage undervoltage protection point Vuvlo1, the leakage voltage conversion module stops converting the input voltage Vin into The drain-level voltage Vd supplied from the drain causes the drain to be powered down. That is, if Vin is smaller than Vuvlo1, the gate voltage conversion module is turned off.
步骤S202:在所述漏级开始掉电后,所述输入电压Vin下降,直至下降至所述栅压欠压保护点,则所述栅压转换模块停止将所述输入电压Vin转换为用于为所述栅极供电的所述栅极电压Vg,使所述栅极掉电。也就是说,若Vin小于Vuvlo2,则栅压转换模块关断。Step S202: after the drain stage starts to be powered down, the input voltage Vin drops until the gate voltage undervoltage protection point falls, then the gate voltage conversion module stops converting the input voltage Vin into The gate voltage Vg that supplies the gate causes the gate to be powered down. That is, if Vin is less than Vuvlo2, the gate voltage conversion module is turned off.
其中,所述栅压欠压保护点小于所述漏压欠压保护点。Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
图5是本发明实施例提供的功放供电控制装置框图,如图5所示,具体包括:FIG. 5 is a block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention. As shown in FIG. 5, the method specifically includes:
栅压转换模块,用于功放上电时,将输入电压转换为用于为功放栅极供电的栅极电压。The gate voltage conversion module is used to convert the input voltage into a gate voltage for powering the power amplifier gate when the power amplifier is powered on.
漏压触发模块,用于判断所述栅极电压是否满足触发所述功放漏级上电的电压要求。The leakage voltage triggering module is configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level.
漏压转换模块,用于若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则将所述输入电压转换为用于为所述漏级供电的漏级电压。And a leakage voltage conversion module, configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.
所述装置还包括:栅压欠压关断模块,用于确定所述输入电压是否上升至栅压欠压保护点。The apparatus also includes a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point.
其中,漏压触发模块包括:The leakage pressure trigger module includes:
使能单元,用于确定所述栅极电压是否下降至为所述漏级供电的触发点;An enabling unit, configured to determine whether the gate voltage drops to a trigger point for supplying the drain level;
漏压欠压关断单元,用于确定所述输入电压是否上升至漏压欠压保护点。A drain-voltage undervoltage shutdown unit is configured to determine whether the input voltage rises to a drain undervoltage protection point.
上电时,所述装置的工作流程包括:若栅压欠压关断模块确定所述输入电压Vin上升至栅压欠压保护点Vuvlo2,则栅压转换模块将所述输入电压Vin转换为所述栅极电压Vg,并输出至所述功放的栅极。随着输入电压Vin上升,Vg下降,若使能单元确定所述栅极电压Vg下降至为所述漏级供电的触发点V1,且漏压欠压关断单元确定所述输入电压Vin上升至漏压欠压保护点Vuvlo1,则判断满足触发所述功放漏级上电的要求,此时,漏压转换模块将所述输入电压Vin转换为用于为所述漏级供电的漏级电压Vd,并输 出至所述功放的漏级。At the time of power-on, the workflow of the device includes: if the gate voltage undervoltage shutdown module determines that the input voltage Vin rises to the gate voltage undervoltage protection point Vuvlo2, the gate voltage conversion module converts the input voltage Vin into a The gate voltage Vg is output to the gate of the power amplifier. As the input voltage Vin rises, Vg decreases, and if the enabling unit determines that the gate voltage Vg falls to the trigger point V1 for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage Vin rises to The leakage undervoltage protection point Vuvlo1 is judged to meet the requirement of triggering the power amplifier leakage level to be powered. At this time, the leakage voltage conversion module converts the input voltage Vin into a drain voltage Vd for supplying the drain level. And output to the drain level of the power amplifier.
本发明实施例利用Vg使能功放漏级的输入电源,能够满足功放上电时序要求。The embodiment of the invention utilizes Vg to enable the input power of the power amplifier drain stage, and can meet the power-on timing requirements of the power amplifier.
进一步地,所述漏压欠压关断单元还用于确定所述输入电压是否下降至所述漏压欠压保护点,所述栅极欠压关断模块还用于确定所述输入电压是否下降至所述栅压欠压保护点。其中,所述栅压欠压保护点小于所述漏压欠压保护点。Further, the drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the drain-voltage undervoltage protection point, and the gate under-voltage shutdown module is further configured to determine whether the input voltage is Drop to the gate voltage undervoltage protection point. Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
下电时,所述装置的工作流程包括:若所述漏压欠压关断单元确定所述输入电压Vin下降至所述漏压欠压保护点Vuvlo1,则漏压转换模块停止将所述输入电压Vin转换为用于为所述漏极供电的所述漏级电压Vd,使所述漏级掉电;随着所述输入电压Vin下降,若所述栅极欠压关断模块确定所述输入电压Vin下降至小于所述漏压欠压保护点Vuvlo1的所述栅压欠压保护点Vuvlo2,则所述栅压转换模块停止将所述输入电压Vin转换为用于为所述栅极供电的所述栅极电压Vg,使所述栅极掉电。When the power is off, the working process of the device includes: if the leakage undervoltage shutdown unit determines that the input voltage Vin falls to the leakage undervoltage protection point Vuvlo1, the leakage pressure conversion module stops the input Converting a voltage Vin to the drain voltage Vd for powering the drain, causing the drain to be powered down; as the input voltage Vin drops, if the gate undervoltage shutdown module determines The input voltage Vin drops to be less than the gate voltage undervoltage protection point Vuvlo2 of the drain undervoltage protection point Vuvlo1, then the gate voltage conversion module stops converting the input voltage Vin into a power supply for the gate The gate voltage Vg causes the gate to be powered down.
本发明实施例提前对漏级掉电,因此能够满足功放下电时序要求。In the embodiment of the invention, the drain level is powered off in advance, so that the power amplifier timing sequence can be met.
其中,图3、图4和图5实施例涉及的各单元和模块均可采用现有的电路或芯片,例如使能单元可采用分压电路,漏压转换模块和漏压欠压关断单元可采用自带欠压锁定功能的电压转换器等,在此不再赘述。The units and modules involved in the embodiments of FIG. 3, FIG. 4 and FIG. 5 can all adopt existing circuits or chips. For example, the enabling unit can adopt a voltage dividing circuit, a leakage voltage conversion module and a drain-voltage undervoltage shutdown unit. A voltage converter with its own undervoltage lockout function can be used, and will not be described here.
其中,图3、图4和图5实施例涉及的功放可以是GaN功放、LDMOS功放、GaAs功放等。The power amplifiers involved in the embodiments of FIG. 3, FIG. 4, and FIG. 5 may be GaN power amplifiers, LDMOS power amplifiers, GaAs power amplifiers, and the like.
其中,图3、图4和图5实施例涉及的所述输入电压Vin可以是应用GaN功放、LDMOS功放、GaAs功放等的***的输入电压。The input voltage Vin involved in the embodiments of FIG. 3, FIG. 4 and FIG. 5 may be an input voltage of a system using a GaN power amplifier, an LDMOS power amplifier, a GaAs power amplifier or the like.
图6是本发明实施例提供的功放供电控制装置的工作框图,如图6所示,包括以下模块:FIG. 6 is a working block diagram of a power amplifier power supply control apparatus according to an embodiment of the present invention. As shown in FIG. 6, the following modules are included:
电压转换单元1(相当于图5的漏压转换模块):将Vin(输入电压)转换成Vd;Voltage conversion unit 1 (corresponding to the leakage voltage conversion module of FIG. 5): converting Vin (input voltage) into Vd;
UVLO(Under Voltage Lock Out,欠压关断)1(相当于图5的漏压欠压关断单元):电压转换单元1工作的必要条件;UVLO (Under Voltage Lock Out) 1 (corresponding to the drain-voltage undervoltage shutdown unit of FIG. 5): a necessary condition for the operation of the voltage conversion unit 1;
使能单元(相当于图5的使能单元):电压转换单元1工作的必要条件;The enabling unit (corresponding to the enabling unit of FIG. 5): a necessary condition for the voltage converting unit 1 to operate;
电压转换单元2(相当于图5的栅压转换模块):将Vin转换成Vg;Voltage conversion unit 2 (corresponding to the gate voltage conversion module of FIG. 5): converting Vin into Vg;
UVLO2(相当于图5的栅压欠压关断模块):电压转换单元2工作的必要条件。UVLO2 (corresponding to the gate voltage undervoltage shutdown module of Fig. 5): a necessary condition for the operation of the voltage conversion unit 2.
基于图6,所述装置控制功放上下电时序的步骤包括:Based on FIG. 6, the step of controlling the power-on and power-off sequence of the power amplifier includes:
第一步:上电时,当Vin上升至Vuvlo2时,UVLO2电路动作,电压转换单元2工作,Vg开始建立;The first step: when power is applied, when Vin rises to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 operates, and Vg starts to be established;
第二步:Vg下降至V1时,使能电路动作,电压转换单元1工作,Vd开始建立,满足上电时序;Step 2: When Vg falls to V1, the enable circuit operates, the voltage conversion unit 1 operates, and Vd starts to be established to meet the power-on sequence;
第三步:下电时,当Vin下降至Vuvlo1时,UVLO1电路动作,电压转换单元1停止工作,Vd开始掉电;The third step: when the power is off, when Vin drops to Vuvlo1, the UVLO1 circuit operates, the voltage conversion unit 1 stops working, and Vd starts to lose power;
第四步:Vin下降至Vuvlo2时,UVLO2电路动作,电压转换单元2停止工作,Vg开始掉电;Step 4: When Vin drops to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 stops working, and Vg starts to lose power;
第五步:Vg上升至V2时,Vd值已小于V3,满足下电时序。Step 5: When Vg rises to V2, the Vd value is less than V3, which satisfies the power-down sequence.
本发明实施例针对现有技术的对栅压时序有要求的功放的时序控制电路控制复杂,可靠性低的现状,提供一种双路独立电源实现的功放时序控制策略,具体提供一种控制功放上下电时序的策略,功放的栅压及漏压用独立电源分别转换得到,其中利用栅压来控制漏压电源的使能,来满足上电时序;下电时可以通过让栅压欠压保护点低于漏压欠压保护点来让漏压提前掉电,满足下电时序要求。The embodiment of the present invention provides a power amplifier timing control strategy implemented by a dual independent power supply, and provides a control power amplifier, which is provided in the prior art, which has a complicated control and low reliability of the timing control circuit of the power amplifier. The strategy of power-on and power-down timing, the gate voltage and the leakage voltage of the power amplifier are respectively converted by independent power sources, wherein the gate voltage is used to control the enable of the leakage voltage power supply to meet the power-on timing; when the power is off, the gate voltage undervoltage protection can be achieved. The point is lower than the leakage voltage undervoltage protection point to allow the leakage voltage to be prematurely de-energized to meet the power-down timing requirements.
本发明实施例适用于所有对栅压时序有要求的功放,不仅仅限于GaN,还包括LDMOS,GaAs等所有功放及所有GaN及GaAs管的其他应用。The embodiments of the present invention are applicable to all power amplifiers that require gate voltage timing, and are not limited to GaN, but also include all power amplifiers such as LDMOS, GaAs, and other applications of all GaN and GaAs tubes.
下面以GaN功放为例,结合图6和图7对控制GaN功放的Vd和Vg的上下电时序的实施过程作进一步的详细描述,具体如下:Taking the GaN power amplifier as an example, the implementation process of controlling the power-on and power-down timings of the Vd and Vg of the GaN power amplifier will be further described in detail with reference to FIG. 6 and FIG. 7 , as follows:
结合图6,硬件***包括:电压转换单元1、UVLO1、使能单元、电压转换单元2、UVLO2。另外,图中Vin为***输入电压;Vd为电压转换单元1的输出电压,为GaN功放漏极供电;Vg为电压转换单元2的输出电压,为GaN功放栅极供电。Referring to FIG. 6, the hardware system includes: a voltage conversion unit 1, a UVLO1, an enable unit, a voltage conversion unit 2, and a UVLO2. In addition, Vin is the system input voltage; Vd is the output voltage of the voltage conversion unit 1, and supplies power to the GaN power amplifier drain; Vg is the output voltage of the voltage conversion unit 2, and supplies power to the GaN power amplifier gate.
其中,UVLO1及使能单元为电压转换单元1工作的必要条件,二者皆具备时,电压转换单元1才可输出Vd;而其中任一条件不具备,则电压转换单元1不工作。Wherein, the UVLO1 and the enabling unit are necessary conditions for the voltage converting unit 1 to operate, and when both are provided, the voltage converting unit 1 can output Vd; and if any of the conditions is not provided, the voltage converting unit 1 does not operate.
其中,UVLO2为电压转换单元2工作的必要条件。Among them, UVLO2 is a necessary condition for the voltage conversion unit 2 to operate.
其中,使能单元受Vg控制,Vg低于电压V1时,使能单元使能电压转换单元1工作;Vg高于电压V1时,使能单元关断电压转换单元1工作。Wherein, the enabling unit is controlled by Vg, and when Vg is lower than the voltage V1, the enabling unit enables the voltage converting unit 1 to operate; when Vg is higher than the voltage V1, the enabling unit turns off the voltage converting unit 1 to operate.
结合图7,流程部分的动作步骤如下:Referring to Figure 7, the steps of the flow part are as follows:
步骤1:Vin上电,当Vin上升至Vuvlo2时,此时UVLO2电路动作,电压转换单元 2工作,输出Vg;Step 1: Vin is powered on. When Vin rises to Vuvlo2, the UVLO2 circuit operates, the voltage conversion unit 2 operates, and outputs Vg.
步骤2:Vin继续上升至Vuvlo1,此时UVLO1电路动作,如果此时Vg已经低于V1,则使能电路也已经动作,二者都具备时,电压转换单元1工作,输出Vd;如果此时Vg仍大于V1,则需等待Vg低于V1后,才可输出Vd,满足上电时序;Step 2: Vin continues to rise to Vuvlo1. At this time, the UVLO1 circuit operates. If Vg is already lower than V1 at this time, the enable circuit has also been activated. When both are available, the voltage conversion unit 1 operates and outputs Vd; If Vg is still greater than V1, it is necessary to wait for Vg to be lower than V1 before outputting Vd to meet the power-on sequence;
步骤3:Vin掉电时,当Vin<Vuvlo1时,UVLO1电路动作,电压转换单元1关断,Vd开始掉电;Step 3: When Vin is powered down, when Vin<Vuvlo1, the UVLO1 circuit operates, the voltage conversion unit 1 is turned off, and Vd starts to be powered down;
步骤4:电压转换单元1关断后,由于电源转换单元2输出Vg负载很小,此时Vin跌落很慢;Step 4: After the voltage conversion unit 1 is turned off, since the output Vg load of the power conversion unit 2 is small, the Vin falls very slowly at this time;
步骤5:当Vin缓慢降至Vin<Vuvlo2时,电压转换单元2关断,Vg开始爬升;Step 5: When Vin slowly drops to Vin<Vuvlo2, the voltage conversion unit 2 is turned off, and Vg starts to climb;
步骤6:当Vg爬升到V2时,只需Vd<V3即满足下电时序。Step 6: When Vg climbs to V2, only Vd < V3 is required to satisfy the power-down sequence.
由于Vuvlo1、Vuvlo2点调节方便,另外利用了Vin在Vd掉电后掉电速度缓慢的特点,本实施例可以轻易实现GaN供电时序,保证GaN功放管在加电和下电过程中的安全性。Due to the convenient adjustment of Vuvlo1 and Vuvlo2 points, and the use of Vin in the slow power-down state after Vd is powered off, this embodiment can easily realize the GaN power supply timing and ensure the safety of the GaN power amplifier tube during power-on and power-off.
本发明实施例适用于GaN HEMT(High Electron Mobility Transistor,高电子迁移率晶体管,基于GaN材料)功放的严格上下电时序控制,特别是通讯领域的GaN功放的应用。The embodiments of the present invention are applicable to the strict power-on and power-down timing control of a GaN HEMT (High Electron Mobility Transistor, GaN-based material) power amplifier, especially the application of a GaN power amplifier in the communication field.
尽管上文对本发明进行了详细说明,但是本发明不限于此,本技术领域技术人员可以根据本发明的原理进行各种修改。因此,凡按照本发明原理所作的修改,都应当理解为落入本发明的保护范围。Although the invention has been described in detail above, the invention is not limited thereto, and various modifications may be made by those skilled in the art in accordance with the principles of the invention. Therefore, modifications made in accordance with the principles of the invention are to be understood as falling within the scope of the invention.
Claims (10)
- 一种功放供电控制方法,其特征在于,包括:A power amplifier power supply control method, comprising:功放上电时,将输入电压转换为用于为功放栅极供电的栅极电压;When the power amplifier is powered on, the input voltage is converted into a gate voltage for supplying power to the power amplifier gate;判断所述栅极电压是否满足触发所述功放漏级上电的电压要求;Determining whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则将所述输入电压转换为用于为所述漏级供电的漏级电压。If it is determined that the gate voltage satisfies a voltage requirement for triggering power-on of the power amplifier drain level, the input voltage is converted into a drain voltage for supplying the drain level.
- 根据权利要求1所述的方法,其特征在于,所述将输入电压转换为用于为功放栅极供电的栅极电压包括:The method of claim 1 wherein said converting said input voltage to a gate voltage for powering a power amplifier gate comprises:若栅压欠压关断模块确定所述输入电压上升至栅压欠压保护点,则栅压转换模块将所述输入电压转换为所述栅极电压,并输出至所述功放的栅极。If the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage and outputs to the gate of the power amplifier.
- 根据权利要求2所述的方法,其特征在于,所述判断所述栅极电压是否满足触发所述功放漏级上电的电压要求包括:The method according to claim 2, wherein the determining whether the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered comprises:若使能单元确定所述栅极电压下降至为所述漏级供电的触发点,且漏压欠压关断单元确定所述输入电压上升至漏压欠压保护点,则判断满足触发所述功放漏级上电的要求。If the enabling unit determines that the gate voltage drops to a trigger point for supplying the drain level, and the drain undervoltage shutdown unit determines that the input voltage rises to a drain undervoltage protection point, determining that the trigger is satisfied Power amplifier leakage level power requirements.
- 根据权利要求3所述的方法,其特征在于,所述方法还包括:The method of claim 3, wherein the method further comprises:所述功放下电时,根据所述栅压欠压保护点和所述漏压欠压保护点,控制所述栅极掉电的起始时间滞后于所述漏级掉电的起始时间。When the power amplifier is powered off, according to the gate voltage undervoltage protection point and the drain undervoltage protection point, the start time of controlling the gate power-off is delayed from the start time of the drain power-down.
- 根据权利要求4所述的方法,其特征在于,所述根据所述栅压欠压保护点和所述漏压欠压保护点,控制所述栅极掉电的起始时间滞后于所述漏级掉电的起始时间包括:The method according to claim 4, wherein said controlling a start time of said gate power-down lags said drain according to said gate voltage undervoltage protection point and said drain undervoltage protection point The start time of the level power down includes:若所述漏压欠压关断单元确定所述输入电压下降至所述漏压欠压保护点,则漏压转换模块停止将所述输入电压转换为用于为所述漏极供电的所述漏级电压,使所述漏级掉电;If the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into the power for powering the drain Leaking the voltage to cause the drain to be powered down;若所述栅极欠压关断模块确定所述输入电压下降至所述栅压欠压保护点,则所述栅压转换模块停止将所述输入电压转换为用于为所述栅极供电的所述栅极电压,使所述栅极掉电;If the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops converting the input voltage to be used to power the gate The gate voltage causes the gate to be powered down;其中,所述栅压欠压保护点小于所述漏压欠压保护点。Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
- 根据权利要求1-5任意一项所述的方法,其特征在于,所述功放是GaN功放或 LDMOS功放或GaAs功放。A method according to any of claims 1-5, wherein the power amplifier is a GaN power amplifier or an LDMOS power amplifier or a GaAs power amplifier.
- 一种功放供电控制装置,其特征在于,包括:A power amplifier power supply control device, comprising:栅压转换模块,用于功放上电时,将输入电压转换为用于为功放栅极供电的栅极电压;a gate voltage conversion module, configured to convert an input voltage into a gate voltage for powering a power amplifier gate when the power amplifier is powered on;漏压触发模块,用于判断所述栅极电压是否满足触发所述功放漏级上电的电压要求;a leakage voltage triggering module, configured to determine whether the gate voltage meets a voltage requirement for triggering power-on of the power amplifier drain level;漏压转换模块,用于若判断所述栅极电压满足触发所述功放漏级上电的电压要求,则将所述输入电压转换为用于为所述漏级供电的漏级电压。And a leakage voltage conversion module, configured to convert the input voltage into a drain voltage for supplying the drain level if it is determined that the gate voltage meets a voltage requirement for triggering the power amplifier drain level to be powered.
- 根据权利要求7所述的装置,其特征在于,所述装置还包括:The device according to claim 7, wherein the device further comprises:栅压欠压关断模块,用于确定所述输入电压是否上升至栅压欠压保护点;a gate voltage undervoltage shutdown module for determining whether the input voltage rises to a gate voltage undervoltage protection point;其中,若所述栅压欠压关断模块确定所述输入电压上升至所述栅压欠压保护点,则所述栅压转换模块将所述输入电压转换为所述栅极电压,并输出至所述功放的栅极。Wherein, if the gate voltage undervoltage shutdown module determines that the input voltage rises to the gate voltage undervoltage protection point, the gate voltage conversion module converts the input voltage into the gate voltage, and outputs To the gate of the power amplifier.
- 根据权利要求8所述的装置,其特征在于,所述漏压触发模块包括:The device according to claim 8, wherein the leakage pressure triggering module comprises:使能单元,用于确定所述栅极电压是否下降至为所述漏级供电的触发点;An enabling unit, configured to determine whether the gate voltage drops to a trigger point for supplying the drain level;漏压欠压关断单元,用于确定所述输入电压是否上升至漏压欠压保护点;a drain-voltage undervoltage shutdown unit for determining whether the input voltage rises to a leakage undervoltage protection point;其中,若所述使能单元确定所述栅极电压下降至为所述漏级供电的触发点,且所述漏压欠压关断单元确定所述输入电压上升至所述漏压欠压保护点,则所述漏压转换模块将所述输入电压转换为所述漏极电压。Wherein, if the enabling unit determines that the gate voltage drops to a trigger point for supplying power to the drain stage, and the drain undervoltage shutdown unit determines that the input voltage rises to the drain undervoltage protection And the drain voltage conversion module converts the input voltage into the drain voltage.
- 根据权利要求9所述的装置,其特征在于,The device of claim 9 wherein:所述漏压欠压关断单元还用于确定所述输入电压是否下降至所述漏压欠压保护点;The drain-voltage undervoltage shutdown unit is further configured to determine whether the input voltage drops to the leakage undervoltage protection point;所述栅极欠压关断模块还用于确定所述输入电压是否下降至小于所述漏压欠压保护点的所述栅压欠压保护点;The gate undervoltage shutdown module is further configured to determine whether the input voltage drops to less than the gate voltage undervoltage protection point of the drain undervoltage protection point;其中,若所述漏压欠压关断单元确定所述输入电压下降至所述漏压欠压保护点,则漏压转换模块停止将所述输入电压转换为用于为所述漏极供电的所述漏级电压,使所述漏级掉电;若所述栅极欠压关断模块确定所述输入电压下降至所述栅压欠压保护点,则所述栅压转换模块停止将所述输入电压转换为用于为所述栅极供电的所述栅极电压,使所述栅极掉电;Wherein, if the drain-voltage undervoltage shutdown unit determines that the input voltage drops to the drain-voltage undervoltage protection point, the drain-voltage conversion module stops converting the input voltage into a power supply for the drain The drain voltage is powered down; if the gate undervoltage shutdown module determines that the input voltage drops to the gate undervoltage protection point, the gate voltage conversion module stops Converting the input voltage to the gate voltage for powering the gate to power down the gate;其中,所述栅压欠压保护点小于所述漏压欠压保护点。Wherein, the gate voltage undervoltage protection point is smaller than the leakage undervoltage protection point.
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