WO2019128232A1 - 一种多只To封装半导体激光器的空间耦合结构 - Google Patents
一种多只To封装半导体激光器的空间耦合结构 Download PDFInfo
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- WO2019128232A1 WO2019128232A1 PCT/CN2018/098551 CN2018098551W WO2019128232A1 WO 2019128232 A1 WO2019128232 A1 WO 2019128232A1 CN 2018098551 W CN2018098551 W CN 2018098551W WO 2019128232 A1 WO2019128232 A1 WO 2019128232A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/262—Optical details of coupling light into, or out of, or between fibre ends, e.g. special fibre end shapes or associated optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Definitions
- the present invention relates to the field of semiconductor laser technology, and in particular to a spatial coupling structure of a plurality of To package semiconductor lasers.
- auxiliary heat sink forms are: C-mount (heat sink base), B-mount, ceramic heat sink, ToCan.
- C-mount heat sink base
- B-mount ceramic heat sink
- ToCan ToCan
- the medium and high power Chips will use the first three modes of auxiliary heat dissipation.
- the wavelength of the Chip is mainly concentrated in the near infrared band.
- the Chip in this band range is stable in the air and is not easy to deliquesce. Visible light and ultraviolet Chips, due to their extremely deliquescent, must be used in the form of ToCan, a well-sealed auxiliary heat sink, to prevent the Chip from coming into contact with the air and avoiding Chip failure.
- the prior art provides a technical solution for fixing a plurality of To-package semiconductor lasers (Transistor-Outline, To, coaxial type) on a heat sink in a circular arrangement, which causes the output beam to be unable to fill the center of the ring. In part, the central part is not fully utilized, resulting in wasted space.
- the beam is coupled into the fiber. When the fiber is output, the far field is a dark spot in the center, which affects the uniformity of the spot. And as the number of package Chips increases, the volume increases faster, and the area of the center of the center where there is no beam filling is larger.
- the spatial coupling of multiple To packaged semiconductor lasers has a long heat dissipation channel, and the thermal diffusion direction and the heat dissipation channel are orthogonal, resulting in low heat dissipation efficiency and complicated package structure.
- the prior art also provides a technical solution in which a To package semiconductor laser is disposed in both horizontal and vertical directions.
- the thermal diffusion direction of the chip and the direction of the heat dissipation channel are also orthogonal, and the To package semiconductor laser is complicated to be installed. It is not easy to dissipate heat, and the light emitted by the To package semiconductor laser in the horizontal and vertical directions cannot be sufficiently mixed, resulting in the output being not white light, and the problem of colored spots and bands.
- the prior art has some obvious common problems.
- the beam is not fully filled in space, there is space waste, and the optical fiber output has a dark band, which reduces the brightness of the fiber output.
- the heat dissipation channel is too long, and the heat diffusion direction and the heat dissipation channel are orthogonal, resulting in low heat dissipation efficiency.
- the package structure is complex, To package semiconductor laser fixed way, and optical components fixed way, the structure is complex and unfavorable to adjust and save costs.
- semiconductor lasers generally adopt a quantum well structure.
- the output beam can be shaped and then coupled out through a fiber.
- a fast-axis collimating mirror and a slow-axis collimating mirror are used to collimate the fast and slow axes of the semiconductor laser, respectively, and then focus and couple into the optical fiber through the focusing mirror.
- the general To package semiconductor laser chip has a problem of deliquescence and cannot be exposed to the air. That is to say, there is no way to open the hat. If the conventional fast-axis collimating mirror and slow-axis collimating mirror are used for collimating and re-coupling the fast and slow axes of the To-package semiconductor laser respectively, the working distance of the fast-axis collimating mirror is required to be greater than 1.2 mm (chip light-emitting point to To Protecting the distance of the window), there is currently no such collimating lens on the market.
- the present invention proposes a spatial coupling structure of a plurality of To package semiconductor lasers, which improves heat dissipation and beam coupling of the semiconductor laser.
- a space coupling structure of a plurality of To package semiconductor lasers comprising a bottom plate, wherein the bottom plate is provided with at least two steps;
- An array of submerged mounting holes is disposed on the lower step of the bottom plate, and the mounting holes of each column are communicated through the electrode slots, wherein the mounting holes are provided with a To package semiconductor laser, and the electrode slots are provided with electrode circuit boards Each of the To package semiconductor lasers is connected in series through the electrode circuit board, and the bottom plate constitutes a heat dissipation channel of the To package semiconductor laser;
- the bottom plate is further provided with a mirror group and a focusing lens group, and the light beam emitted by the To package semiconductor laser is reflected by the mirror group to the focusing lens group, and the focusing lens group concentrates the beam and outputs .
- a mirror mounting plate is disposed on the lower step of the bottom plate, the mirror mounting plate covers the To package semiconductor laser, and the mirror mounting plate is provided with a light transmission corresponding to the To package semiconductor laser. hole;
- the mirror group includes a first type of mirror array and a second type of mirror array, and the first type of mirror array is disposed on a surface of the mirror mounting board, and a piece is disposed above each of the light transmission holes First type of mirror;
- the second type of mirror array and the focusing lens group are disposed on a high step of the bottom plate.
- the surface of the mirror mounting plate is sloped or stepped, and the light beam emitted by the To package semiconductor laser is reflected by the first type of mirror array to the second type of mirror array.
- a second type of mirror array reflects the light beam to the focusing lens group, the focusing lens group concentrating the light beam and outputting the beam;
- the first type of mirrors in the same column do not obscure the light beam reflected behind it, and the reflected light beams are parallel to each other with a predetermined height difference H.
- the optical axis of the To packaged semiconductor laser is vertically or obliquely distributed, and the optical axis spacing of the adjacent To packaged semiconductor lasers is A;
- the upper surface and the lower surface of the mirror mounting plate, the upper surface of the low step, and the bottom surface of the mounting hole are parallel inclined planes, and the inclined plane
- the first type of mirrors are disposed in parallel with each other, the upper edge of the first type of mirror is set to be chamfer less than or equal to 45 degrees, and the right edge of the second type of mirror is set to be less than or equal to 45 Degree of chamfering;
- the second type of mirror array is divided into two sub-arrays, and the two sub-arrays are symmetrically arranged, and the second type of mirrors of the two sub-arrays are inclined by 45 degrees in different directions, at an angle of 90 degrees.
- the mirror mounting plate is a single piece or includes several pieces;
- the mirror mounting plate When the mirror mounting plate includes a plurality of blocks, it is disposed corresponding to the column of the mounting holes.
- the To package semiconductor laser is fixed in the mounting hole by bonding, or welding, or a threaded ring;
- the hole of the mounting hole is provided with an internal thread
- the threaded ring is provided with an external thread
- the light emitting end of the To packaged semiconductor laser is provided with a collimating mirror, and the collimating mirror adopts a spherical mirror or an aspherical mirror.
- the focusing lens group comprises: a spherical mirror, or an aspherical mirror or two orthogonal discrete cylindrical mirrors.
- the To-package semiconductor lasers of adjacent columns are spaced apart from each other and distributed in different rows.
- the To heat diffusion direction is consistent with the heat dissipation channel direction, and the heat dissipation efficiency is high.
- the combination structure of the TO, the optical component and the bottom plate is compact, and the package volume is reduced.
- the invention provides a pair of mirrors to arrange the light beams tightly between each other, thereby increasing the uniformity of the spot after the output of the optical fiber and improving the brightness of the output of the optical fiber.
- the mounting method of the TO, the optical component and the bottom plate in the package structure of the invention is simple, convenient to adjust and save cost.
- FIG. 1 is an exploded perspective view showing a spatial coupling structure of a tilted planar multi-package semiconductor laser according to Embodiment 1 of the present invention
- FIG. 2 is a combination diagram of a spatial coupling structure of a plurality of To package semiconductor lasers of inclined plane type according to Embodiment 1 of the present invention
- FIG. 3 is a cross-sectional view showing a spatial coupling structure of a slanted planar multi-package semiconductor laser according to Embodiment 1 of the present invention
- FIG. 4 is a top plan view showing a spatial coupling structure of a plurality of To package semiconductor lasers of inclined plane type according to Embodiment 1 of the present invention
- FIG. 5 is a schematic diagram of a light beam reflected by a first mirror group according to Embodiment 1 of the present invention.
- FIG. 6 is a schematic diagram of a light beam reflected by a second mirror group provided in Embodiment 1 of the present invention.
- FIG. 7 is an exploded view showing a spatial coupling structure of a plurality of To-package semiconductor lasers of inclined plane type according to Embodiment 2 of the present invention.
- FIG. 8 is a combination diagram of a spatial coupling structure of a plurality of To-package semiconductor lasers of inclined plane type according to Embodiment 2 of the present invention.
- FIG. 9 is a cross-sectional view showing a spatial coupling structure of a plurality of To-package semiconductor lasers of inclined plane type according to Embodiment 2 of the present invention.
- FIG. 10 is a combination diagram of a spatial coupling structure of a plurality of To package semiconductor lasers of a tilt step type according to Embodiment 3 of the present invention.
- FIG. 11 is a cross-sectional view showing a spatial coupling structure of a plurality of To package semiconductor lasers of a tilt step type according to Embodiment 3 of the present invention.
- the invention is directed to the problem of poor heat dissipation of the semiconductor laser in the prior art.
- a sinking mounting hole is disposed, and the semiconductor laser is disposed in the mounting hole, and the heat emitted by the semiconductor laser can be directly radiated to the mounting hole.
- the wall of the hole and the vertical direction radiate to the bottom of the hole of the mounting hole, and then dissipate heat through the bottom plate, thereby improving the heat dissipation effect of the semiconductor laser package structure.
- a spatial coupling structure of a plurality of To package semiconductor lasers includes a bottom plate 1 and a low bottom plate 1 is disposed.
- Step 1-1 and high step 1-2 two steps, according to actual product design needs, you can increase the number of steps, for example, the high step 1-2 is further set to multiple steps, this embodiment only illustrates the setting of two steps .
- An array of sunken mounting holes 3 is disposed on the lower step 1-1 of the bottom plate 1.
- the mounting holes 3 of each row are communicated through the electrode slots 2, and the mounting holes 3 are provided with a To package semiconductor laser 5, which is disposed in the electrode slot 2.
- the To package semiconductor laser 5 is housed in the mounting hole 3, and the heat emitted by the To package semiconductor laser 5 can be directly radiated laterally to the hole wall of the mounting hole 3, and radiated to the bottom of the hole of the mounting hole 3 in a vertical direction, and then passed through the bottom plate. 1 heat dissipation improves the heat dissipation effect of the semiconductor laser package structure.
- the bottom plate 1 is further provided with a mirror group and a focusing lens group.
- the light beam emitted by the To package semiconductor laser 5 is reflected by the mirror group to the focusing lens group, and the focusing lens group concentrates the beam and outputs it, and can be output to the optical fiber 13 and finally through the optical fiber. 13 is output to the outside.
- a mirror mounting plate 7 is disposed on the lower step 1-1 of the bottom plate 1, and the mirror mounting plate 7 covers the To package semiconductor laser 5, and the mirror mounting plate 7 is provided with a light transmitting hole 8 corresponding to the To package semiconductor laser 5.
- the light beam emitted from the To package semiconductor laser 5 is emitted upward through the light transmission hole 8 to the mirror group.
- the mirror group includes an array of a first type of mirror 9 and an array of a second type of mirror 10.
- the first type of mirror 9 and the second type of mirror 10 each employ a plane mirror.
- An array of the first type of mirrors 9 is disposed on the upper surface of the mirror mounting plate 7, and a first type of mirror 9 is disposed above each of the light transmission holes 8.
- An array of the second type of mirrors 10 and a focusing lens group are disposed on the high step 1-2 of the bottom plate 1. If the product design requires, the high step 1-2 is further arranged in multiple steps, and the array of the second type of mirror 10 and the focus lens group may be located on different steps.
- the array of the second type of mirror 10 is divided into two sub-arrays, the two sub-arrays are symmetrically arranged, and the second type of mirrors 10 of the two sub-arrays are tilted 45 degrees in different directions, and are clipped at 90 degrees.
- the angle reflects the light reflected from the first type of mirror 9 together.
- the focusing lens group can adopt such a composition scheme, including: a spherical mirror, or an aspherical mirror, or two orthogonal discrete cylindrical mirrors.
- the spherical mirror here refers to a lens which can be characterized by a radius R
- the aspherical mirror refers to a lens which can be characterized by a radius Rn.
- a spherical mirror, an aspherical mirror, and a cylindrical mirror are three different types of lenses.
- two orthogonal discrete cylindrical mirrors 11, 12 and cylindrical mirrors 11 and 12 are convex cylindrical mirrors, and the optical axes are perpendicular to each other, that is, one is vertically placed, and the other is vertical. Horizontally placed.
- the upper surface of the mirror mounting plate 7 is sloped, and the light beam emitted from the To package semiconductor laser 5 is reflected through the array of the first type of mirror 9
- An array of the second type of mirrors 10 the array of the second type of mirrors 10 reflects the light beam to the focusing lens group, and the focusing lens group concentrates the light beams and outputs them.
- the first type of mirror 9 in the same column does not block the light beam reflected rearward, and the reflected light beams are parallel to each other with a predetermined height difference H.
- the height difference H can be 400 ⁇ m.
- the optical axis of the To-package semiconductor laser 5 is obliquely distributed, and the adjacent To-package semiconductor laser 5 has an optical axis pitch of A and an optical axis pitch of A of 10 mm.
- the upper surface and the lower surface of the mirror mounting plate 7, the upper surface of the lower step 1-1, and the bottom surface of the mounting hole 3 are parallel inclined planes.
- H is the height difference between the light beams 14 reflected by the first type of mirror 9, and A is the optical axis pitch of the semiconductor laser 5.
- the first type of mirrors 9 are arranged parallel to each other, and the upper edge of the first type of mirror 9 is set to be chamfered by 45 degrees or less, so that the first type of mirror 9 in the same column does not block the beam reflected behind it. And the reflected beams are parallel to each other.
- the right edge of part of the second type of mirror 10 is also set to a chamfer of less than or equal to 45 degrees, which ensures that the second type of mirror 10 in the same column does not block the beam reflected behind it, and the reflected beams are parallel to each other.
- the mirror mounting plate 7 is a plurality of elongated plates or a single plate.
- the mirror mounting plate 7 When the mirror mounting plate 7 includes a plurality of blocks, it is disposed corresponding to the column of the mounting holes 3. Each of the column mounting holes 3 is covered with a mirror mounting plate 7, and the mirror mounting plates 7 are preferably closely arranged.
- the To package semiconductor laser 5 is fixed in the mounting hole 3 by bonding, or soldering, or a threaded ring.
- the hole of the mounting hole 3 is provided with an internal thread
- the threaded ring is provided with an external thread
- the beam emitting end of the To package semiconductor laser 5 is provided with a collimating mirror 6, and the collimating mirror 6 is bonded and fixed to the cap of the To package semiconductor laser 5 by using a spherical mirror or an aspherical mirror.
- the adjacent columns of To-package semiconductor lasers 5 are spaced apart from each other and distributed in different rows, so that the design can further improve the heat dissipation effect of the To package semiconductor laser 5.
- the material of the bottom plate 1 is made of copper, which is favorable for heat conduction and heat dissipation.
- the lower step 1-1, the mounting hole 3, and the electrode slot 2 can be processed on the base plate 1 by a milling process.
- the light beam emitted by the To package semiconductor laser 5 is simultaneously collimated by the collimating mirror 6 on its fast and slow axis, and the collimated beam passes through the light transmitting hole 8 on the corresponding mirror mounting plate 7 to reach the light transmitting hole.
- the array of the first type of mirrors 9 above 8 is reflected by the array of the first type of mirrors 9, and the reflected parallel beams are merged into the array of the second type of mirrors 10, and the beams reflected by the array of the second type of mirrors 10 are again focused.
- the lens group is focused, and the focusing lens group concentrates the light beams and outputs them.
- the light beams passing through the array of the first type of mirrors 9 of each column cannot be closely arranged, and there is a certain relationship between each column.
- the gap as shown in FIG. 5, has a certain spacing between each column of light beams 14.
- the beams reflected by the array of the first type of mirrors 9 are merged into the second type of reflections in parallel.
- the beams reflected by the array of mirrors of the second type are parallel to each other, and there is almost no spacing between the beams 14 of each column.
- an array of the second type of mirrors 10 is disposed after the array of the first type of mirrors 9.
- the distance between the light beams is minimized, the dark gap between the light beams is eliminated, and the brightness of the light beam is improved.
- the second embodiment of the present invention is different from the first embodiment in that the upper surface of the mirror mounting plate 7 is sloped, and the mirror mounting plate 7 is under the mirror.
- the upper surface of the surface, the lower step 1-1, and the bottom surface of the mounting hole 3 are parallel horizontal planes.
- H is the height difference between the light beams 14 reflected by the first type of mirror 9, and A is the optical axis pitch of the semiconductor laser 5.
- the optical axis of the To package semiconductor laser 5 is vertically distributed.
- FIG. 10 and FIG. 11 show a third embodiment of the present invention.
- the upper surface of the mirror mounting plate 7 is stepped, and the lower surface of the mirror mounting plate 7 is low.
- the upper surface of the step 1-1 and the bottom surface of the mounting hole 3 are parallel horizontal planes.
- the step height difference of the upper surface of the mirror mounting plate 7 is H, so that the height difference between the light beams 14 reflected by the first type of mirror 9 is also H.
- the optical axis of the To package semiconductor laser 5 is vertically distributed.
- the To heat diffusion direction is consistent with the heat dissipation channel direction, and the heat dissipation efficiency is high.
- the combination structure of the TO, the optical component and the bottom plate is compact, and the package volume is reduced.
- the invention provides a pair of mirrors to arrange the light beams tightly between each other, thereby increasing the uniformity of the spot after the output of the optical fiber and improving the brightness of the output of the optical fiber.
- the mounting method of the TO, the optical component and the bottom plate in the package structure of the invention is simple, convenient to adjust and save cost.
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Abstract
一种多只To封装半导体激光器(5)的空间耦合结构,该空间耦合结构包括底板(1),底板(1)上设置有至少两级台阶。底板(1)的低台阶(1-1)上设置有下沉式安装孔(3)阵列,每一列的安装孔(3)之间通过电极槽(2)连通。安装孔(3)中设置有To封装半导体激光器(5),电极槽(2)中设置有电极电路板(4)。每一列To封装半导体激光器(5)通过电极电路板(4)串联。底板(1)构成To封装半导体激光器(5)的散热通道。底板(1)上还设置有反射镜组和聚焦透镜组,To封装半导体激光器(5)发出的光束通过反射镜组反射至聚焦透镜组,聚焦透镜组将光束汇聚后输出。本发明具有封装体积小、To热扩散方向和散热通道方向一致、散热效率高的特点,解决了现有技术中半导体激光器封装体积大、散热结构不良的技术问题。
Description
本发明涉及半导体激光器技术领域,特别涉及一种多只To封装半导体激光器的空间耦合结构。
发明背景
由于半导体激光器体积小、寿命长、覆盖波长范围广等优点,近年来其得到了快速发展。随着半导体激光器光输出功率的增加,器件的散热也变得更加困难。对于高功率的Chip(芯片),其热功率大,底面积小,为了保证所构建的半导体激光器组件具有良好的功率稳定性,要为Chip增加辅助热沉来提高散热能力。
常见辅助热沉形式有:C—mount(热沉底座)、B—mount、陶瓷热沉、ToCan。一般中高功率的Chip会选用前三者辅助散热形式,Chip的波长主要集中在近红外波段,该波段范围内的Chip在空气中比较稳定,不易潮解失效。而可见光和紫外Chip,由于极易潮解,所以必须用ToCan这种具有良好密闭性的辅助热沉形式,可以避免Chip与空气接触,避免Chip失效。
随着激光显示、生物医疗、激光器制版等一系列应用需求(几十瓦到几百瓦)对可见和紫外半导体激光器输出功率的不断提升,单只ToCan封装Chip已经无法满足需求(单只最大3w),而目前多只ToCan封装Chip空间耦合存在诸多困难。
现有技术中提供了多只To封装半导体激光器(Transistor-Outline,To,同轴型)按环形排布方式固定在热沉上的技术方案,该排布方式造成输出的光束无法填充环的中心部分,没有充分利用中心部分,造成空间浪费。光束耦合进光纤,在光纤输出时远场呈中心部较暗的环状光斑,影响光斑均匀度。且随着封装Chip数量的增加体积增加速度更快,圆心中心部分没有光束填充的区域更大。多只To封装半导体激光器的空间耦合存在散热通道过长,热扩散方向和散热通道存在正交,导致散热效率不高以及封装结构复杂的问题。
现有技术中还提供了在水平和垂直方向均设置有To封装半导体激光器的技术方案,该技术方案中芯片的热扩散方向与散热通道方向也呈正交形式,To封装半导体激光器安装形式复杂且不易散热,而且在水平和垂直方向设置To封装半导体激光器发出的光无法进行充分混光,导致输出不是白光,出现彩色斑点和光带的问题。
综上所述,现有技术存在一些比较明显的共性问题,一、在空间上光束没有进 行充分填充,存在空间上的浪费,光纤输出存在暗带,降低了光纤输出的亮度。二、散热通道过长,热扩散方向和散热通道存在正交,导致散热效率不高。三、封装结构复杂,To封装半导体激光器固定方式,和光学元器件固定方式,结构复杂不利装调和节省成本。
目前,半导体激光器普遍采用量子阱结构,为提高半导体激光器的光束质量,可将输出光束经过整形后再通过光纤耦合输出。在耦合时,均会用到快轴准直镜和慢轴准直镜,对半导体激光器的快慢轴分别进行准直,然后通过聚焦镜聚焦耦合进光纤。
但对于To封装半导体激光器存在困难。首先,一般To封装半导体激光器芯片存在易潮解问题,无法暴露在空气中。也就是说没有办法做开帽处理。如果用传统的快轴准直镜和慢轴准直镜对To封装半导体激光器的快慢轴分别进行准直再耦合的方式,要求快轴准直镜的工作距离大于1.2mm(芯片发光点到To保护窗片的距离),目前市面上基本没有这样的准直透镜可以应用。
发明内容
鉴于现有技术存在的问题,本发明提出了一种多只To封装半导体激光器的空间耦合结构,改善了半导体激光器的散热和光束耦合。
为了实现上述目的,本发明采用了如下技术方案:
一种多只To封装半导体激光器的空间耦合结构,包括底板,所述底板上设置有至少两级台阶;
所述底板的低台阶上设置有下沉式安装孔阵列,每一列的安装孔之间通过电极槽连通,所述安装孔中设置有To封装半导体激光器,所述电极槽中设置有电极电路板,每一列所述To封装半导体激光器通过所述电极电路板串联,所述底板构成所述To封装半导体激光器的散热通道;
所述底板上还设置有反射镜组和聚焦透镜组,所述To封装半导体激光器发出的光束通过所述反射镜组反射至所述聚焦透镜组,所述聚焦透镜组将所述光束汇聚后输出。
可选地,所述底板的低台阶上设置有反射镜安装板,所述反射镜安装板覆盖所述To封装半导体激光器,所述反射镜安装板上对应所述To封装半导体激光器设置有透光孔;
所述反射镜组包括第一类反射镜阵列和第二类反射镜阵列,所述第一类反射镜阵列设置在所述反射镜安装板上表面,每一个所述透光孔上方设置有一块第一类反 射镜;
所述底板的高台阶上设置所述第二类反射镜阵列和所述聚焦透镜组。
可选地,所述反射镜安装板上表面呈斜坡状或台阶状,所述To封装半导体激光器发出的光束通过所述第一类反射镜阵列反射至所述第二类反射镜阵列,所述第二类反射镜阵列将所述光束反射至所述聚焦透镜组,所述聚焦透镜组将所述光束汇聚后输出;
同一列中的所述第一类反射镜不遮挡它后方反射的所述光束,并且反射的所述光束互相平行,具有预定高度差H。
可选地,所述To封装半导体激光器的光轴竖直或者倾斜分布,相邻的所述To封装半导体激光器的光轴间距为A;
所述To封装半导体激光器的光轴倾斜分布时,所述反射镜安装板的上表面和下表面、所述低台阶的上表面、所述安装孔的底面为平行的倾斜平面,所述倾斜平面的倾斜角度为M,M=arcsin(H/A)。
可选地,所述第一类反射镜互相平行设置,所述第一类反射镜的上边沿设置成小于或等于45度的倒角,第二类反射镜的右边沿设置成小于或等于45度的倒角;
所述第二类反射镜阵列分为两个子阵列,两个子阵列对称布置,两个子阵列中的第二类反射镜朝不同方向倾斜45度,呈90度夹角。
可选地,所述反射镜安装板为一整块或者包括若干块;
所述反射镜安装板包括若干块时,对应所述安装孔的列设置。
可选地,所述To封装半导体激光器通过粘接、或者焊接、或者螺纹压环固定在所述安装孔中;
所述To封装半导体激光器通过螺纹压环固定在所述安装孔中时,所述安装孔的孔壁上设置有内螺纹,所述螺纹压环设置有外螺纹。
可选地,所述To封装半导体激光器的光束发射端设置有准直镜,所述准直镜采用球面镜或者非球面镜。
可选地,所述聚焦透镜组包括:一个球面镜、或一个非球面镜或两个正交分立的柱面镜。
可选地,相邻列的所述To封装半导体激光器互相间隔排列,分布于不同的行。
采用上述技术方案的多只To封装半导体激光器的空间耦合结构,具有以下优点:
本发明中的To热扩散方向和散热通道方向一致,散热效率高。
本发明中TO、光学元器件和底板的组合结构紧凑,减小了封装体积。
本发明通过设置两组反射镜使光束之间紧密排布,增加了光纤输出后的光斑均匀性,提高了光纤输出的亮度。
本发明封装结构中TO、光学元器件和底板的固定方式简单,方便装调和节省成本。
附图简要说明
图1为本发明实施例1中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构分解图;
图2为本发明实施例1中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构的组合图;
图3为本发明实施例1中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构的剖视图;
图4为本发明实施例1中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构的俯视图;
图5为本发明实施例1中提供的第一反射镜组反射后的光束示意图;
图6为本发明实施例1中提供的第二反射镜组反射后的光束示意图;
图7为本发明实施例2中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构的分解图;
图8为本发明实施例2中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构的组合图;
图9为本发明实施例2中提供的一种倾斜平面式的多只To封装半导体激光器的空间耦合结构的剖视图;
图10为本发明实施例3中提供的一种倾斜台阶式的多只To封装半导体激光器的空间耦合结构的组合图;
图11为本发明实施例3中提供的一种倾斜台阶式的多只To封装半导体激光器的空间耦合结构的剖视图。
图中:1.底板;1-1.低台阶;1-2.高台阶;2.电极槽;3.安装孔;4.电极电路板;5.To封装半导体激光器;6.准直镜;7.反射镜安装板;8.透光孔;9.第一类反射镜;10.第二类反射镜;11.柱面镜;12.柱面镜;13.光纤;14.光束。
实施本发明的方式
为使本发明的目的、技术方案和优点更加清楚,下面将结合附图对本发明实施方式作进一步地详细描述。
本发明针对现有技术中半导体激光器散热不良的问题,在半导体激光器的安装底板上设置有下沉式安装孔,半导体激光器安置在安装孔中,半导体激光器所发出的热量可以直接横向辐射至安装孔的孔壁上,和垂直方向辐射至安装孔的孔底上,然后通过底板进行散热,提高了半导体激光器封装结构的散热效果。
下面列举具体实施例对多只To封装半导体激光器的空间耦合结构的不同形式进行说明。
实施例1
如图1、图2、图3、图4所示为本发明实施例1,在本实施例中,一种多只To封装半导体激光器的空间耦合结构,包括底板1,底板1上设置有低台阶1-1和高台阶1-2两级台阶,根据实际产品设计需要,可以再增加台阶数量,例如将高台阶1-2进一步设置成多台阶,本实施例仅以设置两个台阶举例说明。
底板1的低台阶1-1上设置有下沉式安装孔3阵列,每一列的安装孔3之间通过电极槽2连通,安装孔3中设置有To封装半导体激光器5,电极槽2中设置有电极电路板4(埋入式),每一列To封装半导体激光器5通过电极电路板4串联,底板1构成To封装半导体激光器5的散热通道。
To封装半导体激光器5收纳在安装孔3中,To封装半导体激光器5所发出的热量可以直接横向辐射至安装孔3的孔壁上,和垂直方向辐射至安装孔3的孔底上,然后通过底板1进行散热,提高了半导体激光器封装结构的散热效果。
底板1上还设置有反射镜组和聚焦透镜组,To封装半导体激光器5发出的光束通过反射镜组反射至聚焦透镜组,聚焦透镜组将光束汇聚后输出,可以输出至光纤13,最终通过光纤13向外输出。
底板1的低台阶1-1上设置有反射镜安装板7,反射镜安装板7覆盖To封装半导体激光器5,反射镜安装板7上对应To封装半导体激光器5设置有透光孔8。To封装半导体激光器5所发出的光束向上通过透光孔8射出至反射镜组。
如图1、图2所示,反射镜组包括第一类反射镜9阵列和第二类反射镜10阵列,第一类反射镜9和第二类反射镜10均采用平面镜。第一类反射镜9阵列设置在反射镜安装板7上表面,每一个透光孔8上方设置有一块第一类反射镜9。
底板1的高台阶1-2上设置第二类反射镜10阵列和聚焦透镜组。如果产品设 计需要,高台阶1-2进一步设置成多台阶,第二类反射镜10阵列和聚焦透镜组可以位于不同的台阶上。
如图4中所示,第二类反射镜10阵列分为两个子阵列,两个子阵列是对称布置的,两个子阵列中的第二类反射镜10朝不同方向倾斜45度,呈90度夹角,将第一类反射镜9反射过来的光束靠拢集中反射出去。
聚焦透镜组可以采用这样的组成方案,包括:一个球面镜、或一个非球面镜、或两个正交分立的柱面镜。此处的球面镜是指可以用半径R表征的透镜,非球面镜是指可以用半径Rn表征的透镜,在光学领域中球面镜、非球面镜、柱面镜是三种不同类型的透镜。
如图3、图4所示,两个正交分立的柱面镜11、12,柱面镜11、12均是凸柱面镜,光轴互相垂直,即一个是竖直摆放,一个是水平摆放。
为了让同一列中的第一类反射镜9不遮挡它后方反射的光束,反射镜安装板7上表面呈斜坡状,To封装半导体激光器5发出的光束通过第一类反射镜9阵列反射至第二类反射镜10阵列,第二类反射镜10阵列将光束反射至聚焦透镜组,聚焦透镜组将光束汇聚后输出。
如图3、图5所示,同一列中的第一类反射镜9不遮挡它后方反射的光束,并且反射的光束互相平行,具有预定高度差H。高度差H可以为400μm。
在本实施例中,To封装半导体激光器5的光轴倾斜分布,相邻的To封装半导体激光器5的光轴间距为A,光轴间距为A可以为10mm。
如图3所示,To封装半导体激光器5的光轴倾斜分布时,反射镜安装板7的上表面和下表面、低台阶1-1的上表面、安装孔3的底面为平行的倾斜平面,倾斜平面的倾斜角度为M,M=arcsin(H/A)。
其中,H为第一类反射镜9所反射出的光束14之间的高度差,A为半导体激光器5的光轴间距。
第一类反射镜9互相平行设置,第一类反射镜9的上边沿设置成小于或等于45度的倒角,这样可以保证同一列中的第一类反射镜9不遮挡它后方反射的光束,且反射的光束互相平行。
部分第二类反射镜10的右边沿也设置成小于或等于45度的倒角,这样可以保证同一列中的第二类反射镜10不遮挡它后方反射的光束,且反射的光束互相平行。
在本实施例中,反射镜安装板7为若干块长条状的板,也可以为一整块板。
反射镜安装板7包括若干块时,对应安装孔3的列设置。每一列安装孔3上面 要覆盖一块反射镜安装板7,而且反射镜安装板7之间最好能够紧密排列。
To封装半导体激光器5通过粘接、或者焊接、或者螺纹压环固定在安装孔3中。
To封装半导体激光器5通过螺纹压环固定在安装孔3中时,安装孔3的孔壁上设置有内螺纹,螺纹压环设置有外螺纹。
To封装半导体激光器5的光束发射端设置有准直镜6,准直镜6采用球面镜或者非球面镜,与To封装半导体激光器5的管帽粘接固定。
如图4所示,相邻列的To封装半导体激光器5互相间隔排列,分布于不同的行,这样设计可以进一步提高To封装半导体激光器5的散热效果。
在本实施例中,底板1的材质采用铜,有利于导热和散热。低台阶1-1、安装孔3、电极槽2可以通过铣工艺在底板1上加工。
本实施例多只To封装半导体激光器的空间耦合结构中的光束传输路径说明如下:
To封装半导体激光器5发射的光束经过准直镜6对其快慢轴同时进行准直,准直后的光束穿过其所对应反射镜安置板7上面的透光孔8,到达安置在透光孔8上方的第一类反射镜9阵列,经第一类反射镜9阵列反射后,反射的平行光束汇入第二类反射镜10阵列,通过第二类反射镜10阵列反射的光束再到达聚焦透镜组聚焦,聚焦透镜组再将光束汇聚后输出。
需要说明的是,由于To封装半导体激光器5自己的尺寸和安装结构相互干涉的限制,经过每列第一类反射镜9阵列的光束不能做到紧密排布在一起,每列之间存在一定的间隙,如图5所示,每列光束14之间存在一定的间距,为了减小两列光束14之间的间距,将经过第一类反射镜9阵列反射的光束并行汇入第二类反射镜10阵列,通过第二类反射镜10阵列反射的光束之间彼此平行,每列光束14之间几乎没有间距,因此,在第一类反射镜9阵列后再设置第二类反射镜10阵列,可以使在第二类反射镜10反射的光束彼此之间不发生遮挡的情况下,达到光束之间的间距最小,消除光束之间的暗隙,提升光束亮度。
实施例2
如图7、图8、图9所示为本发明实施例2,在本实施例中与实施例1所不同的是,反射镜安装板7上表面呈斜坡状,反射镜安装板7的下表面、低台阶1-1的上表面、安装孔3的底面为平行的水平平面。
反射镜安装板7上表面倾斜角度为M,M=arcsin(H/A)。
其中,H为第一类反射镜9所反射出的光束14之间的高度差,A为半导体激光器5的光轴间距。
由于安装孔3的底面为水平平面,所以To封装半导体激光器5的光轴竖直分布。
本实施例中多只To封装半导体激光器的空间耦合结构的其他结构与实施例1中相同,此处不再重复描述。
实施例3
如图10、图11所示为本发明实施例3,在本实施例中与实施例1所不同的是,反射镜安装板7上表面呈台阶状,反射镜安装板7的下表面、低台阶1-1的上表面、安装孔3的底面为平行的水平平面。
反射镜安装板7上表面的台阶高度差为H,这样第一类反射镜9所反射出的光束14之间的高度差也为H。
由于安装孔3的底面为水平平面,所以To封装半导体激光器5的光轴竖直分布。
本发明实施例中的多只To封装半导体激光器的空间耦合结构具有以下优点:
本发明中的To热扩散方向和散热通道方向一致,散热效率高。
本发明中TO、光学元器件和底板的组合结构紧凑,减小了封装体积。
本发明通过设置两组反射镜使光束之间紧密排布,增加了光纤输出后的光斑均匀性,提高了光纤输出的亮度。
本发明封装结构中TO、光学元器件和底板的固定方式简单,方便装调和节省成本。
以上所述,仅为本发明的具体实施方式,在本发明的上述教导下,本领域技术人员可以在上述实施例的基础上进行其他的改进或变形。本领域技术人员应该明白,上述的具体描述只是更好的解释本发明的目的,本发明的保护范围应以权利要求的保护范围为准。
Claims (10)
- 一种多只To封装半导体激光器的空间耦合结构,其特征在于,包括底板,所述底板上设置有至少两级台阶;所述底板的低台阶上设置有下沉式安装孔阵列,每一列的安装孔之间通过电极槽连通,所述安装孔中设置有To封装半导体激光器,所述电极槽中设置有电极电路板,每一列所述To封装半导体激光器通过所述电极电路板串联,所述底板构成所述To封装半导体激光器的散热通道;所述底板上还设置有反射镜组和聚焦透镜组,所述To封装半导体激光器发出的光束通过所述反射镜组反射至所述聚焦透镜组,所述聚焦透镜组将所述光束汇聚后输出。
- 如权利要求1所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述底板的低台阶上设置有反射镜安装板,所述反射镜安装板覆盖所述To封装半导体激光器,所述反射镜安装板上对应所述To封装半导体激光器设置有透光孔;所述反射镜组包括第一类反射镜阵列和第二类反射镜阵列,所述第一类反射镜阵列设置在所述反射镜安装板上表面,每一个所述透光孔上方设置有一块第一类反射镜;所述底板的高台阶上设置所述第二类反射镜阵列和所述聚焦透镜组。
- 如权利要求2所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述反射镜安装板上表面呈斜坡状或台阶状,所述To封装半导体激光器发出的光束通过所述第一类反射镜阵列反射至所述第二类反射镜阵列,所述第二类反射镜阵列将所述光束反射至所述聚焦透镜组,所述聚焦透镜组将所述光束汇聚后输出;同一列中的所述第一类反射镜不遮挡它后方反射的所述光束,并且反射的所述光束互相平行,具有预定高度差H。
- 如权利要求3所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述To封装半导体激光器的光轴竖直或者倾斜分布,相邻的所述To封装半导体激光器的光轴间距为A;所述To封装半导体激光器的光轴倾斜分布时,所述反射镜安装板的上表面和下表面、所述低台阶的上表面、所述安装孔的底面为平行的倾斜平面,所述倾斜平面的倾斜角度为M,M=arcsin(H/A)。
- 如权利要求2所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述第一类反射镜互相平行设置,所述第一类反射镜的上边沿设置成小于或等于45度的倒角,第二类反射镜的右边沿设置成小于或等于45度的倒角;所述第二类反射镜阵列分为两个子阵列,两个子阵列对称布置,两个子阵列中的第二类反射镜朝不同方向倾斜45度,呈90度夹角。
- 如权利要求2所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述反射镜安装板为一整块或者包括若干块;所述反射镜安装板包括若干块时,对应所述安装孔的列设置。
- 如权利要求1所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述To封装半导体激光器通过粘接、或者焊接、或者螺纹压环固定在所述安装孔中;所述To封装半导体激光器通过螺纹压环固定在所述安装孔中时,所述安装孔的孔壁上设置有内螺纹,所述螺纹压环设置有外螺纹。
- 如权利要求1所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述To封装半导体激光器的光束发射端设置有准直镜,所述准直镜采用球面镜或者非球面镜。
- 如权利要求1所述的多只To封装半导体激光器的空间耦合结构,其特征在于,所述聚焦透镜组包括:一个球面镜、或一个非球面镜或两个正交分立的柱面镜。
- 如权利要求1所述的多只To封装半导体激光器的空间耦合结构,其特征在于,相邻列的所述To封装半导体激光器互相间隔排列,分布于不同的行。
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CN110556706A (zh) * | 2019-09-17 | 2019-12-10 | 深圳市柠檬光子科技有限公司 | 面发射激光芯片的半导体激光器及半导体激光器耦合装置 |
CN113410750B (zh) * | 2020-03-17 | 2022-07-12 | 潍坊华光光电子有限公司 | 一种双光束半导体激光器及制作方法 |
CN111786254B (zh) * | 2020-07-15 | 2021-08-31 | 中南大学 | 基于光斑检测的阵列半导体激光器反射镜耦合装置和方法 |
CN113381270A (zh) * | 2021-04-21 | 2021-09-10 | 深圳市瑞沃德生命科技有限公司 | 一种激光器及具有其的激光理疗装置 |
CN114006269A (zh) * | 2021-12-29 | 2022-02-01 | 深圳市星汉激光科技股份有限公司 | 一种高功率半导体激光器直接输出***及其偏振合束结构 |
CN114883910A (zh) * | 2022-04-28 | 2022-08-09 | 北京工业大学 | 一种基于to封装多单管的半导体激光器模块 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002243994A (ja) * | 2001-02-21 | 2002-08-28 | Minolta Co Ltd | 光源装置 |
CN103368066A (zh) * | 2013-07-29 | 2013-10-23 | 武汉锐科光纤激光器技术有限责任公司 | 一种斜面式多管半导体激光器耦合装置及方法 |
CN105207058A (zh) * | 2015-10-10 | 2015-12-30 | 杭州虹视科技有限公司 | 白光激光模组、激光显示***和激光投影*** |
CN105514794A (zh) * | 2016-01-11 | 2016-04-20 | 北京凯普林光电科技股份有限公司 | 一种半导体激光器 |
CN105891977A (zh) * | 2016-06-16 | 2016-08-24 | 北京为世联合科技有限公司 | 一种紧凑型激光器 |
CN108169854A (zh) * | 2017-12-27 | 2018-06-15 | 北京凯普林光电科技股份有限公司 | 一种多只To封装半导体激光器的空间耦合结构 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002243994A (ja) * | 2001-02-21 | 2002-08-28 | Minolta Co Ltd | 光源装置 |
CN103368066A (zh) * | 2013-07-29 | 2013-10-23 | 武汉锐科光纤激光器技术有限责任公司 | 一种斜面式多管半导体激光器耦合装置及方法 |
CN105207058A (zh) * | 2015-10-10 | 2015-12-30 | 杭州虹视科技有限公司 | 白光激光模组、激光显示***和激光投影*** |
CN105514794A (zh) * | 2016-01-11 | 2016-04-20 | 北京凯普林光电科技股份有限公司 | 一种半导体激光器 |
CN105891977A (zh) * | 2016-06-16 | 2016-08-24 | 北京为世联合科技有限公司 | 一种紧凑型激光器 |
CN108169854A (zh) * | 2017-12-27 | 2018-06-15 | 北京凯普林光电科技股份有限公司 | 一种多只To封装半导体激光器的空间耦合结构 |
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