WO2019127203A1 - 显示屏及其制作方法，以及显示设备 - Google Patents

显示屏及其制作方法，以及显示设备 Download PDF

Info

Publication number
WO2019127203A1
WO2019127203A1 PCT/CN2017/119331 CN2017119331W WO2019127203A1 WO 2019127203 A1 WO2019127203 A1 WO 2019127203A1 CN 2017119331 W CN2017119331 W CN 2017119331W WO 2019127203 A1 WO2019127203 A1 WO 2019127203A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
retaining wall
substrate
display screen
thin film
Prior art date
Application number
PCT/CN2017/119331
Other languages
English (en)
French (fr)
Inventor
邱昌明
王雨宁
Original Assignee
深圳市柔宇科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to CN201780097403.4A priority Critical patent/CN111433915A/zh
Priority to PCT/CN2017/119331 priority patent/WO2019127203A1/zh
Publication of WO2019127203A1 publication Critical patent/WO2019127203A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of flexible display technologies, and in particular, to a display screen, a display screen manufacturing method, and a display device.
  • OLED organic light-emitting diodes
  • the thin film package is a packaging method of the OLED device to realize the sealing of the OLED device.
  • the package structure needs to be provided with an auxiliary structure in the edge region to achieve the package precision, and it is difficult to ensure a narrow frame of the frame area of the display screen.
  • Embodiments of the present invention provide a display screen and a display device having a narrow frame.
  • the display screen of the present invention includes a substrate, a light emitting function layer disposed on the substrate, and an encapsulation layer encapsulating the light emitting function layer.
  • a retaining wall surrounding the encapsulating layer is disposed on an edge region of the substrate, and a groove is disposed on the edge region of the substrate, wherein the retaining wall covers the trench and the retaining wall is connected to the substrate The ends are embedded in the grooves.
  • the retaining wall and the groove laminate combination of the embodiment of the invention not only effectively block the ductile crack of the inorganic layer, but also avoid the device failure caused by the water vapor intrusion; and can effectively avoid the overflow of the molten organic material of the encapsulating layer during the film forming process, It is better to make the border as small as possible to achieve a narrow border or no border.
  • FIG. 1 is a schematic plan view showing an internal side view of a display screen provided by the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the internal structure of the display screen shown in FIG. 1.
  • FIG. 3 is a plan view showing an internal side view of another embodiment of the display screen shown in FIG. 1.
  • FIG. 4 is a flow chart of a method of manufacturing a display screen of the present invention.
  • An embodiment of the present invention provides a display screen and a display device.
  • the display screen is a flexible screen including an organic light emitting diode.
  • the display device includes the display screen or a display screen and a touch panel, and the display device may be an in-vehicle device.
  • the display screen is specifically an Active Matrix/Organic Light Emitting Diode (AMOLED) display screen, and includes a substrate 10 including a display area A and an edge area. B.
  • the substrate 10 is a flexible substrate or a glass substrate.
  • the substrate 10 is made of a flexible material
  • the display screen is a flexible display screen.
  • the display area A of the substrate 10 corresponds to the display area of the display screen
  • the edge area B corresponds to the edge area of the display screen.
  • Organic light-emitting diodes (OLED devices), TFT devices, and the like are disposed in the display area of the display screen, and are all carried by the substrate.
  • the substrate 10 is provided with a light-emitting function layer 14 and an encapsulation layer 18 encapsulating the light-emitting function layer.
  • the encapsulation layer 18 is formed by a thin film encapsulation, which is formed by stacking an inorganic layer, an organic layer and an inorganic layer.
  • the inorganic layer is a combination of SiOx, SiNx or an inorganic material
  • the organic layer is formed by using an IJP (inject printer) technology in the luminescent functional layer.
  • 14 is uniformly coated with a molten insulating material which can block moisture.
  • the substrate 10 Located in the edge region B of the substrate 10, the substrate 10 is provided with a retaining wall 19 disposed around the encapsulating layer 18, and the edge of the substrate 10 is provided with a groove 13 toward the retaining wall 19, wherein A retaining wall 19 is stacked above the groove 13 and covers the groove 13, and an end of the retaining wall 19 connected to the substrate is embedded in the groove 13 to fill the groove 13.
  • the retaining wall 19 is used to block the phenomenon that the molten insulating material overflows due to material flow characteristics when the encapsulating layer 18 is packaged, and the groove 13 is used to prevent stretching or compression of the flexible screen to cause ductility of the inorganic layer. In the case of cracks, the ductile cracks will stop at the groove 13 and prevent moisture from entering, causing damage to the OLED device and the TFT device.
  • the retaining wall 19 of the embodiment of the present invention is laminated with the groove 13 and partially embedded with each other, which not only effectively blocks the ductile crack of the inorganic layer, but also avoids the device failure caused by water vapor intrusion; and can effectively prevent the encapsulating layer 18 from being formed during the film forming process. Overflow of medium melted organic material. The most important thing is to make the border as small as possible, to achieve a narrow border or no border.
  • the retaining wall 19 includes a first retaining wall body 191 and a second retaining wall body 192 laminated on the first retaining wall body 191 away from the surface of the substrate.
  • 14 includes a thin film transistor layer 15, a flat layer 155 covering the thin film transistor layer 15, and a pixel defining layer 16 and a light emitting layer 17 which are sequentially stacked on the flat layer 155.
  • the first retaining wall body 191 is formed in the same layer and in the same process as the flat layer 155
  • the second retaining wall body 192 is located on the same layer as the pixel defining layer 16 and is manufactured in the same process. In the manufacturing process, there is no need to newly add processes and steps, and it is only necessary to define the pattern positions of the first retaining wall body 191 and the second retaining wall body 192 when defining the pattern in the flat layer.
  • the luminescent layer 17 includes an anode layer 170, a cathode layer 172, and a illuminating source 171 embedded in the pixel defining layer 16.
  • the anode layer 170 is disposed on the flat layer 16 away from the thin film transistor layer 15.
  • the surface is electrically connected to a thin film transistor layer that covers the pixel defining layer 16.
  • the light source 171 is embedded on a surface of the pixel defining layer 16 away from the surface of the flat layer and exposing the pixel defining layer 16.
  • the trenches 13 are provided in plurality and are arranged side by side, and the thin film transistor layer 15 includes a gate insulating layer 151 laminated on the substrate 10, and a plurality of the trenches 13 are disposed on the gate electrode.
  • the insulating layer 151 is passed through the gate insulating layer 151.
  • An end portion of the first barrier wall 191 connected to the substrate 10 encloses the trench 13 , and the remaining portion is connected to the surface of the gate insulating layer 151 , and the retaining wall 19 is connected to the trench 13 to increase the connection.
  • the area ensures stability in combination with the substrate 10.
  • the first retaining wall 191 is removed from the portion connected to the trench 13 , and the remaining portion is curved with the gate insulating layer 151 to increase the first retaining wall 191 and the gate insulating layer 151 . Binding force.
  • the thin film transistor layer 15 includes a plurality of thin film transistors including the gate insulating layer, a gate covered by the gate insulating layer 151 on a surface of the substrate 10, and a gate insulating layer.
  • An active layer corresponding to the gate of the surface of the 151, a source and a drain disposed opposite to each other, and the source and the drain are respectively connected to opposite sides of the active layer.
  • the insulating layer covers a plurality of the thin film transistors.
  • the flat layer 155 is laminated on the surface of the insulating layer.
  • the surface of the pixel defining layer 16 is provided with a supporting pillar (not shown), and the second retaining wall body 192 is supported away from the surface of the first retaining wall body 191.
  • the body 193 is formed by the same process as the support column 161. The support body 193 can better prevent the molten insulating material from overflowing due to material flow characteristics when the package layer 18 is packaged.
  • an embodiment of the present invention provides a method for manufacturing a display screen, including
  • a thin film transistor layer 15 is formed on the substrate 10.
  • the thin film transistor layer 15 includes a gate insulating layer 151, and a trench 13 is formed on the gate insulating layer 151 of the edge region B of the substrate 10.
  • a gate electrode is formed on the surface of the substrate 10 by a patterning process, and after the gate insulating layer is coated, an active layer, a source and a drain are formed by a patterning process, thereby forming a plurality of thin film transistors.
  • the insulating material is coated to form an insulating layer covering the thin film transistor.
  • the patterning process includes coating, reticle, exposure, etching, development, and the like.
  • Step S2 coating a flat material layer on the thin film transistor layer 15 and the edge of the gate insulating layer 151, and patterning the flat material layer to form a flat layer 155 and a first block located at an edge region of the substrate 10.
  • patterning the flat material layer to form the first barrier wall 191 may be performed by etching.
  • Step S3 coating an organic material layer on the surface of the flat layer 155 and the surface of the first retaining wall body 191 away from the substrate, patterning the organic material layer to form the pixel defining layer 16 and laminating on the first retaining wall body 191
  • the second retaining wall 192 When the flat layer and the pixel defining layer 16 are formed by the step S2 and the step S3, the retaining wall 19 is formed, and the external process is not required, and the manufacturing cost is not increased, and the quality of the display screen is ensured.
  • the anode layer is disposed on the surface of the flat layer away from the thin film transistor layer and electrically connected to the thin film transistor layer.
  • a light-emitting layer 17 is formed on the flat layer 155 and the pixel defining layer 16.
  • the light emitting layer 17 includes the anode layer, the cathode layer, and a light emitting source embedded in the pixel defining layer 16, and the cathode layer covers the pixel defining layer 16.
  • step S5 an encapsulation layer 18 encapsulating the pixel defining layer 16 and the luminescent layer 17 is formed.
  • the encapsulation layer 18 is formed by a thin film encapsulation technique.
  • a second support wall 192 is formed with a support body away from the surface of the first retaining wall body 191, and the support body and the support post are formed of the same material in the same layer by the same process step.
  • the method for manufacturing the display screen according to the embodiment of the present invention forms a retaining wall without increasing the number of process steps to prevent the encapsulation layer from overflowing during the manufacturing process, and does not increase the width of the border portion of the display screen, thereby achieving a narrow bezel effect.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示屏，包括基板（10），设置在基板（10）的发光功能层（14）和封装发光功能层（14）的封装层（18），基板（10）上的边缘区域（B）上设置有围绕封装层（18）的挡墙（19），基板（10）边缘区域（B）上设有沟槽（13），其中，挡墙（19）覆盖沟槽（13）上且挡墙（19）与基板（10）连接的端部嵌入沟槽（13）内。

Description

显示屏及其制作方法，以及显示设备 技术领域
本发明涉及柔性显示技术领域，尤其涉及一种显示屏，显示屏制作方法，以及显示设备。
背景技术
现有的有机发光二极管(Organic light-emitting diodes，OLED)显示屏具备自发光、厚度薄并可以翻卷折叠而被推崇。薄膜封装是OLED器件的封装方法，以实现OLED器件的密封，一般情况下封装过程中需要在边缘区设置辅助结构实现封装精度，难以保证显示屏的边框区域实现窄边框化。
发明内容
本发明实施例提供一种具有较窄边框的显示屏及显示设备。
本发明所述的显示屏，包括基板，设置在所述基板的发光功能层和封装所述发光功能层的封装层，
所述基板上的边缘区域上设置有围绕所述封装层的挡墙，所述基板边缘区域上设有沟槽，其中，所述挡墙覆盖所述沟槽上且所述挡墙与基板连接的端部嵌入所述沟槽内。
本发明实施例的挡墙与沟槽层叠结合，既有效阻挡无机层的延展性裂痕,避免水气入侵造成器件失效；又能有效避免封装层在成膜过程中溶融状有机材料的溢流，更能将边框尽量做小，实现窄边框或无边框的目的。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还 可以根据这些附图获得其他的附图。
图1为本发明提供的显示屏的内部侧视方向的平面示意图。
图2为图1所示的显示屏的内部具体结构的截面示意图。
图3为图1所示的显示屏的另一实施例的内部侧视方向的平面示意图。
图4为本发明显示屏制作方法的流程图。
具体实施方式
下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述。
本发明实施例提供一种显示屏和显示设备，所述显示屏为包括有机发光二极管的柔性屏，显示设备包括所述显示屏或者显示屏和触控面板，所述显示设备可以是车载设备、可穿戴设备，也可以是便携式终端设备。
请参阅图1，本实施例中所述显示屏具体为有源矩阵有机发光二极体(Active Matrix/Organic Light Emitting Diode，AMOLED)显示屏，包括基板10，基板10包括显示区域A和边缘区域B。所述基板10为柔性基板或玻璃基板。本实施例中，所述基板10柔性材料制成，所述显示屏为柔性显示屏。所述基板10的显示区域A与显示屏的显示区域对应，所述边缘区域B与显示屏的边缘区域对应。显示屏的显示区域内设置有(Organic light-emitting diodes)OLED器件、TFT器件等，均由基板承载。
位于所述显示区域A内，所述基板10上设有发光功能层14和封装所述发光功能层的封装层18。所述封装层18采用薄膜封装，是无机层、有机层和无机层堆叠形成,通常无机层是用SiOx、SiNx或者他无机材料的组合,有机层是利用IJP(inject printer)技术在发光功能层14上均匀涂布一种可以阻隔水气的溶融状绝缘材料。
位于所述基板10的边缘区域B，所述基板10上设有围绕所述封装层18设置的挡墙19，所述基板10边缘朝向所述挡墙19设有沟槽13，其中，所述挡墙19堆叠于所述沟槽13的上方并覆盖所述沟槽13，所述挡墙19与基板连接的端部嵌入所述沟槽13内将沟槽13填充。
所述挡墙19用于阻挡在所述封装层18封装时溶融状绝缘材料因为材料流动特性产生溢流的现象，而沟槽13用于防止在柔性屏拉伸或压缩让无机层产 生延展性裂痕时，延展性裂痕到达沟槽13处会停止，避免水气进入，造成OLED器件和TFT器件的损坏。而本发明实施例的挡墙19与沟槽13层叠且部分互相嵌设结合，既有效阻挡无机层的延展性裂痕，避免水气入侵造成器件失效；又能有效避免封装层18在成膜过程中溶融状有机材料的溢流。最重要的是能将边框尽量做小，实现窄边框或无边框的目的。
如图2所示，本实施例中，所述挡墙19包括第一挡墙体191和层叠于所述第一挡墙体191远离基板表面的第二挡墙体192，所述发光功能层14包括薄膜晶体管层15、覆盖所述薄膜晶体管层15的平坦层155，以及依次叠于所述平坦层155上的像素定义层16及发光层17。本实施例中，所述第一挡墙体191与所述平坦层155位于同一层并同一道工艺制成，所述第二挡墙体192与像素定义层16位于同一层并同一道工艺制成，进而在制作过程中，无需新增加工艺和步骤，在平坦层定义图案时只需要定义出第一挡墙体191和第二挡墙体192的图案位置即可。
本实施例中，所述发光层17包括阳极层170、阴极层172和嵌设于像素定义层16的发光源171，所述阳极层170设于所述平坦层16远离所述薄膜晶体管层15的表面并与薄膜晶体管层电连接，所述阴极层172覆盖所述像素定义层16。所述发光源171是嵌设在所述像素定义层16远离平坦层的表面并露出像素定义层16的表面。
本实施例中，所述沟槽13为多个且并排设置，所述薄膜晶体管层15包括层叠于所述基板10的栅极绝缘层151，多个所述沟槽13设于所述栅极绝缘层151上并贯穿所述栅极绝缘层151。所述第一挡墙体191与基板10连接的端部部分封装所述沟槽13，其余部分与所述栅极绝缘层151表面连接，所述挡墙19通过与沟槽13连接，增加连接面积，进而保证与基板10结合的稳定性。进一步的，所述第一挡墙体191除去与所述沟槽13连接的部分，其余部分与所述栅极绝缘层151为曲面连接，进而增加第一挡墙体191与栅极绝缘层151结合力。
所述薄膜晶体管层15包括数个薄膜晶体管，所述薄膜晶体管包括所述栅极绝缘层、被所述栅极绝缘层151覆盖于所述基板10的表面的栅极、形成于栅极绝缘层151表面的与栅极对应的有源层、相对间隔设置的源极和漏极，所述源极和漏极分别连接所述有源层相对两侧。绝缘层覆盖数个所述薄膜晶体管。 所述平坦层155层叠于所述绝缘层的表面。
如图3所示，进一步的，所述像素定义层16的表面设有支撑柱(图未示)，所述第二挡墙体192远离所述的第一挡墙体191的表面形成有支撑体193，所述支撑体193与所述支撑柱161同一道工艺形成的，支撑体193可以更好的防止在所述封装层18封装时溶融状绝缘材料因为材料流动特性产生溢流的现象。
请参阅图4，本发明实施例提供一种显示屏制作方法，包括，
步骤S1，在基板10上形成薄膜晶体管层15，薄膜晶体管层15包括栅极绝缘层151，位于基板10的边缘区域B的栅极绝缘层151上形成有沟槽13。
本步骤中，包括通过图案化工艺在基板10的表面形成栅极，在涂布完栅极绝缘层后再通过图案化工艺形成有源层、源极和漏极，进而形成数个薄膜晶体管。涂布绝缘材料形成覆盖薄膜晶体管的绝缘层。所述图案化工艺包括涂布、光罩、曝光、蚀刻、显影等工艺技术。
步骤S2，在所述薄膜晶体管层15上和所述栅极绝缘层151边缘涂布平坦材料层，图案化所述平坦材料层以形成平坦层155及位于所述基板10边缘区域的第一挡墙体191；其中，第一挡墙体191朝向所述基板的端部封装所述沟槽13。本步骤中，图案化所述平坦材料层以形成第一挡墙体191可以采用蚀刻方式。
步骤S3，在所述平坦层155表面及第一挡墙体191远离基板的表面上涂布有机材料层，图案化所述有机材料层形成像素定义层16及层叠于第一挡墙体191上的第二挡墙体192。通过步骤S2和步骤S3形成平坦层和像素定义层16的同时形成所述挡墙19，不需要增加而外额工艺，不增加制作成本，而保证显示屏的质量。本步骤中，在涂布像素定义层之前，需要在平坦层形成发光层17的阳极层。所述阳极层设于所述平坦层远离所述薄膜晶体管层的表面并与薄膜晶体管层电连接，
步骤S4，在平坦层155上和像素定义层16上形成发光层17。所述发光层17包括所述阳极层、阴极层和嵌设于像素定义层16的发光源，所述阴极层覆盖所述像素定义层16。
步骤S5，形成封装所述像素定义层16及发光层17的封装层18。本步骤中，封装层18采用薄膜封装技术形成。
在形成封装所述像素定义层16及发光层17的封装层18之前，还包括在 所述像素定义层16上形成数个间隔设置的支撑柱，支撑柱通过图案化工艺形成，同时在所述第二挡墙体192远离所述的第一挡墙体191的表面形成有支撑体，所述支撑体与所述支撑柱为同样材料在同一层通过同一工艺步骤形成。
本发明实施例所述的显示屏制作方法在不增加工艺步骤前提下形成挡墙以防止封装层在制作过程中溢胶现象，并不增加占用显示屏边框区域宽度，实现窄边框效果。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。

Claims (10)

  1. 一种显示屏，其特征在于，包括基板，设置在所述基板的发光功能层和封装所述发光功能层的封装层，
    所述基板上的边缘区域上设置有围绕所述封装层的挡墙，所述基板边缘区域上还设有沟槽，其中，所述挡墙覆盖所述沟槽上且所述挡墙与基板连接的端部嵌入所述沟槽内。
  2. 如权利要求1所述显示屏，其特征在于，所述挡墙包括第一挡墙体和层叠于所述第一挡墙体远离基板表面的第二挡墙体，所述发光功能层包括薄膜晶体管层、覆盖所述薄膜晶体管层的平坦层，以及依次叠于所述平坦层上的像素定义层及发光层；
    所述第一挡墙体与所述平坦层位于同一层并同一道工艺制成，所述第二挡墙体与像素定义层位于同一层并同一道工艺制成。
  3. 如权利要求1或2所述显示屏，其特征在于，所述第二挡墙体远离所述的第一挡墙体的表面形成有支撑体。
  4. 如权利要求3所述显示屏，其特征在于，所述像素定义层上设有支撑柱，所述支撑体与所述支撑柱同一道工艺形成的。
  5. 如权利要求2所述显示屏，其特征在于，所述沟槽为多个且并排设置，所述薄膜晶体管层包括层叠于所述基板的栅极绝缘层，多个所述沟槽设于所述栅极绝缘层上并贯穿所述栅极绝缘层。
  6. 如权利要求2所述显示屏，其特征在于，所述第一挡墙体与基板连接的端部部分封装所述沟槽，另一部分与所述栅极绝缘层曲面连接。
  7. 如权利要求2所述显示屏，其特征在于，所述发光层包括阳极层、阴极层和嵌设于像素定义层的发光源，所述阳极层设于所述平坦层远离所述薄膜晶体管层的表面并与薄膜晶体管层电连接，所述阴极层覆盖所述像素定义层。
  8. 如权利要求1-7任一项所述显示屏，其特征在于，所述基板为柔性基板或玻璃基板。
  9. 一种显示屏制作方法，其特征在于，包括，在基板上形成薄膜晶体管层，薄膜晶体管层包括栅极绝缘层，位于基板的边缘区域的栅极绝缘层上形成有沟槽；
    在所述薄膜晶体管层上和所述栅极绝缘层边缘涂布平坦材料层，图案化所述平坦材料层以形成平坦层及位于所述基板边缘区域的第一挡墙体；其中，第一挡墙体覆盖所述沟槽；
    在所述平坦层表面及第一挡墙体远离基板的表面上涂布像素材料层，图案化所述像素材料层形成像素定义层及层叠于第一挡墙体上的第二挡墙体；
    在平坦层上和像素定义层上形成发光层；
    形成封装所述像素定义层及发光层的封装层。
  10. 一种显示设备，其特征在于，包括权利要求1-8任一项所述的显示屏。
PCT/CN2017/119331 2017-12-28 2017-12-28 显示屏及其制作方法，以及显示设备 WO2019127203A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201780097403.4A CN111433915A (zh) 2017-12-28 2017-12-28 显示屏及其制作方法，以及显示设备
PCT/CN2017/119331 WO2019127203A1 (zh) 2017-12-28 2017-12-28 显示屏及其制作方法，以及显示设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2017/119331 WO2019127203A1 (zh) 2017-12-28 2017-12-28 显示屏及其制作方法，以及显示设备

Publications (1)

Publication Number Publication Date
WO2019127203A1 true WO2019127203A1 (zh) 2019-07-04

Family

ID=67062813

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/119331 WO2019127203A1 (zh) 2017-12-28 2017-12-28 显示屏及其制作方法，以及显示设备

Country Status (2)

Country Link
CN (1) CN111433915A (zh)
WO (1) WO2019127203A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112349867A (zh) * 2020-10-27 2021-02-09 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
WO2021164501A1 (zh) * 2020-02-19 2021-08-26 京东方科技集团股份有限公司 显示面板及显示装置
CN114122278A (zh) * 2020-08-28 2022-03-01 深圳市柔宇科技股份有限公司 显示设备及其制作方法
CN114335374A (zh) * 2020-09-30 2022-04-12 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN115411216A (zh) * 2022-09-15 2022-11-29 惠科股份有限公司 显示面板及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349640A (ja) * 2003-05-26 2004-12-09 Seiko Epson Corp パターンの形成方法及びデバイスの製造方法、デバイス、電気光学装置及び電子機器
US20090225431A1 (en) * 2008-03-07 2009-09-10 Visera Technologies Company Limited Alignment device and application thereof
CN104466029A (zh) * 2013-09-24 2015-03-25 胜华科技股份有限公司 有机发光封装结构及其制造方法
CN106450038A (zh) * 2016-12-21 2017-02-22 上海天马微电子有限公司 显示面板及其制造方法、显示装置
CN106816457A (zh) * 2016-12-28 2017-06-09 上海天马微电子有限公司 一种触控显示面板及其制作方法、触控显示装置
CN106876428A (zh) * 2017-02-03 2017-06-20 上海天马微电子有限公司 柔性显示面板、其制作方法及显示装置
CN107123744A (zh) * 2017-04-27 2017-09-01 京东方科技集团股份有限公司 一种封装结构、显示装置及照明装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068715B (zh) * 2017-03-28 2019-12-20 上海天马微电子有限公司 一种有机发光显示面板、有机发光显示装置以及有机发光显示面板的制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004349640A (ja) * 2003-05-26 2004-12-09 Seiko Epson Corp パターンの形成方法及びデバイスの製造方法、デバイス、電気光学装置及び電子機器
US20090225431A1 (en) * 2008-03-07 2009-09-10 Visera Technologies Company Limited Alignment device and application thereof
CN104466029A (zh) * 2013-09-24 2015-03-25 胜华科技股份有限公司 有机发光封装结构及其制造方法
CN106450038A (zh) * 2016-12-21 2017-02-22 上海天马微电子有限公司 显示面板及其制造方法、显示装置
CN106816457A (zh) * 2016-12-28 2017-06-09 上海天马微电子有限公司 一种触控显示面板及其制作方法、触控显示装置
CN106876428A (zh) * 2017-02-03 2017-06-20 上海天马微电子有限公司 柔性显示面板、其制作方法及显示装置
CN107123744A (zh) * 2017-04-27 2017-09-01 京东方科技集团股份有限公司 一种封装结构、显示装置及照明装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021164501A1 (zh) * 2020-02-19 2021-08-26 京东方科技集团股份有限公司 显示面板及显示装置
CN114122278A (zh) * 2020-08-28 2022-03-01 深圳市柔宇科技股份有限公司 显示设备及其制作方法
CN114335374A (zh) * 2020-09-30 2022-04-12 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN114335374B (zh) * 2020-09-30 2024-06-04 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN112349867A (zh) * 2020-10-27 2021-02-09 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN112349867B (zh) * 2020-10-27 2024-04-23 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN115411216A (zh) * 2022-09-15 2022-11-29 惠科股份有限公司 显示面板及其制作方法

Also Published As

Publication number Publication date
CN111433915A (zh) 2020-07-17

Similar Documents

Publication Publication Date Title
WO2019127203A1 (zh) 显示屏及其制作方法，以及显示设备
US10964909B2 (en) Organic light emitting diode display device having a dam for controlling flow of encapsulant
US11217642B2 (en) Display panel, manufacturing method thereof, and display device
KR102329978B1 (ko) 플렉서블 유기발광다이오드 표시장치
JP6305759B2 (ja) 表示装置
CN108091675B (zh) 显示基板及其制作方法
US10068954B2 (en) Organic light-emitting display device
WO2018158953A1 (ja) 表示装置およびその製造方法
US20220085124A1 (en) Display panel and method for manufacturing the same, and display apparatus
KR102105509B1 (ko) 캡슐화 구조체, 디스플레이 패널 및 그 제조 방법
EP3113241B1 (en) Organic light emitting display device
US20150194618A1 (en) Flexible organic light emitting diode display device and manufacturing method thereof
KR20200060002A (ko) 표시 장치
US20190288231A1 (en) Display mother-substrate and method of manufacturing the same, display substrate and display apparatus
US9147857B2 (en) OLED display panel
WO2019218623A1 (zh) 阵列基板及制作方法、显示面板及制作方法、显示装置
TW201532841A (zh) 顯示裝置
US10115774B2 (en) Display device and method of manufacturing the same
WO2019085080A1 (zh) 双面oled显示面板及其制造方法
CN111900260A (zh) 一种显示面板及其制备方法、显示装置
KR20190066648A (ko) 표시 장치 및 그 제조 방법
JP2015103427A (ja) 表示装置の製造方法
US11158689B2 (en) Electroluminescent display panel, manufacturing method thereof and display device
CN110649069A (zh) 显示面板及显示面板的制作方法
JP2012134173A (ja) 表示装置およびその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17935831

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17935831

Country of ref document: EP

Kind code of ref document: A1