WO2019120026A1 - 一种白光led封装结构以及白光源*** - Google Patents

一种白光led封装结构以及白光源*** Download PDF

Info

Publication number
WO2019120026A1
WO2019120026A1 PCT/CN2018/116768 CN2018116768W WO2019120026A1 WO 2019120026 A1 WO2019120026 A1 WO 2019120026A1 CN 2018116768 W CN2018116768 W CN 2018116768W WO 2019120026 A1 WO2019120026 A1 WO 2019120026A1
Authority
WO
WIPO (PCT)
Prior art keywords
wavelength
spectrum
white
light source
package structure
Prior art date
Application number
PCT/CN2018/116768
Other languages
English (en)
French (fr)
Inventor
张平
时军朋
黄森鹏
林振端
陈顺意
徐宸科
Original Assignee
厦门市三安光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Priority to JP2020526212A priority Critical patent/JP7046178B2/ja
Publication of WO2019120026A1 publication Critical patent/WO2019120026A1/zh
Priority to US16/899,413 priority patent/US11462517B2/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular, to a white LED package structure and a white light source system.
  • a light-emitting diode is a solid-state semiconductor light-emitting device.
  • Existing LED illuminators generally use blue LEDs to excite green, yellow, and red phosphors to obtain mixed white light, but because of the discontinuity of this white light spectrum, some color rendering indexes are below 90.
  • the white LEDs produced by the existing blue chip have obvious blue light hazards (as shown in Figures 1 and 2), which has caused widespread debates in the industry and consumers.
  • the present invention provides a two-chip or multi-chip white LED package structure and a white light source system, comprising: a white LED package structure comprising: a substrate, an LED chip and a wavelength conversion material layer;
  • the invention is characterized in that: at least two wavelengths of LED chips, wherein the first LED chip has a peak wavelength between 385 and 425 nm, and the second chip has a peak wavelength longer than the first LED chip with a peak wavelength between 440 and 460 nm.
  • the wavelength conversion material layer has an emission spectrum peak wavelength of 450 to 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip to emit a white light source.
  • the invention also provides another white light LED package structure and a white light source system, comprising: a substrate, an LED chip and a wavelength conversion material layer; wherein: at least two wavelengths of LED chips, wherein the peak wavelength of the first LED chip is Between 385 and 425 nm, the peak wavelength of the second chip is longer than the peak wavelength of the first LE D chip, and the wavelength conversion material layer comprises a wavelength conversion material of at least two wavelengths, wherein one wavelength conversion material is first The LED chip is excited, the emission spectrum wavelength is between 440 and 600 nm, and the other wavelength conversion material is excited by the second chip, and the emission spectrum wavelength is between 500 and 700 nm.
  • the illuminating spectrum of the white light source is P( ⁇ )
  • the illuminating spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ )
  • the cos ⁇ characterizes the similarity between the spectrum of the white LED and the black body radiation spectrum.
  • the white light source satisfies the following relationship:
  • the illuminating spectrum of the white light source is P( ⁇ )
  • the illuminating spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ )
  • the cos ⁇ characterizes the similarity between the spectrum of the white LED and the black body radiation spectrum.
  • the white light source satisfies the following relationship:
  • the light emission spectrum of the white light source is P( ⁇ )
  • the light emission spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ )
  • P( ⁇ max ) is light within 380 to 780 nm.
  • B( ⁇ max ) is the maximum intensity of blackbody radiation in 380-780nm
  • D 1 ( ⁇ ) is the difference between the spectrum of white LED and blackbody radiation spectrum, within 510-610nm
  • the illuminating spectrum of the white light source is P( ⁇ )
  • the illuminating spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ )
  • D 2 ( ⁇ ) characterizes the spectrum of the white LED and the black body radiation.
  • the second LED chip has a peak wavelength between 440 and 460 nm.
  • a third LED chip is further included, the peak wavelength being between 550 and 570 nm.
  • the layer of wavelength converting material comprises at least two phosphors that excite peak wavelengths of the emission spectrum.
  • the wavelength conversion material layer comprises two or more phosphors having an excitation spectrum peak wavelength of 400 to 425 nm or 425 to 460 nm.
  • the wavelength converting material layer comprises at least a first, a second, and a third different phosphor having a peak wavelength of the emitted spectrum.
  • the wavelength conversion material layer comprises three or more phosphors having an emission spectrum peak wavelength of 450 to 500 nm or 500 to 600 nm or 600 to 700 nm.
  • the wavelength conversion material layer has a narrow excitation spectrum of between 30 and 80 nm.
  • the excitation efficiency of the wavelength conversion material layer at a peak wavelength of the first LED chip is 70% or less, and the excitation efficiency at a peak wavelength of the second LED chip is 80% or more.
  • the light emitted by any one of the wavelength conversion material layers is absorbed by the other wavelength conversion material layer by 50% or less.
  • the light emitted by the one wavelength conversion material layer is at a peak wavelength of emission of the wavelength conversion material layer, and the excitation efficiency of the other wavelength conversion material layer is 70% or less.
  • the layers of wavelength converting material are mixed together or not fully mixed.
  • the at least two wavelengths of wavelength converting material are spatially separated.
  • a white light source system including the above-described white LED package structure.
  • the white LED package structure and the white light source system provided by the present invention at least include the following technical effects:
  • FIG. 1 is a schematic diagram of a white LED package structure that is currently mainstream in the market.
  • Figure 2 is a comparison of the spectrum of the mainstream white LED and the blackbody radiation spectrum.
  • FIG. 3 is a schematic view of a near-sunlight white LED package structure.
  • Figure 4 is a comparison of the spectrum of the near-sunlight white LED and the blackbody radiation spectrum.
  • FIG. 5 is a schematic cross-sectional view showing a white LED package structure of Embodiment 1.
  • Fig. 6 is a graph showing the luminescence spectrum of Example 1 and Comparative Example.
  • FIG. 7 is a schematic cross-sectional view showing a white LED package structure of Embodiment 2.
  • Fig. 8 is a graph of D 1 ( ⁇ ) of Example 2 and Comparative Example.
  • Fig. 9 is a graph of D 2 ( ⁇ ) of Example 2 and Comparative Example.
  • FIG. 10 is a schematic cross-sectional view showing a white LED package structure of Embodiment 3.
  • FIG. 11 is a schematic cross-sectional view showing a white LED package structure of Embodiment 4.
  • FIG. 12 is a schematic cross-sectional view showing a white LED package structure of Embodiment 5.
  • Figure 13 is a cross-sectional view showing the white LED package structure of the sixth embodiment.
  • the embodiment provides a white LED package structure, comprising: a substrate; the LED chip is located on the substrate; the wavelength conversion material layer is located on the LED chip; wherein the LED chip is a purple chip. (Violet chip) and blue chip, the wavelength of the violet chip is 385-425 nm, preferably 410-420 nm, the wavelength of the blue chip is 440-460 nm, preferably 445-460 nm, and the wavelength conversion material layer can include wavelength conversion of two wavelengths.
  • the wavelength conversion material layer can include wavelength conversion of two wavelengths.
  • the material, one of the wavelength conversion materials is excited by the violet LED chip, the emission spectrum wavelength is between 440 and 600 nm, and the other wavelength conversion material is excited by the blue chip chip, the emission spectrum wavelength is between 500 and 700 nm, and the emission spectrum of the wavelength conversion material
  • the peak wavelength is between 450 and 700 nm, and the wavelength converting material layer absorbs the light emitted by the LED chip to emit a white light source.
  • the LED chip is fixed on a base, and the LED chip can select a flip chip and/or a positive chip and/or a vertical chip and/or a high voltage chip, or one of the foregoing combinations.
  • the flip chip the substrate is made of a material having electrostatic and surge protection capabilities, preferably ZnO or ZnO is mainly used (including doping other metals) or CaSrZrO 3 or BaTiO 3 or BaSrTiO 3 , etc.
  • the titanate and zirconate materials can be fabricated into a multilayer varistor or a multi-layer ceramic capacitor.
  • the wavelength conversion material layer can select phosphors with different excitation spectrum peak wavelengths, such as two or more kinds of phosphors with excitation peak wavelengths of 400-425 nm or 425-460 nm, and the excitation spectrum is narrow, between 30-80 nm.
  • Phosphors of different emission spectrum peak wavelengths such as three or more kinds of phosphors having an emission spectrum peak wavelength of 450 to 500 nm or 500 to 600 nm or 600 to 700 nm, may be selected.
  • the wavelength conversion material layer is preferably B (Blue, blue), G (Green, green), and R (Red, red) phosphors, and the B phosphor, G phosphor, and R phosphor are completely mixed and covered in the violet chip. And on the Blu-ray chip.
  • the B phosphor has an excitation wavelength of 390 nm, which can better absorb violet light, and emits a blue wavelength of about 450 to 500 nm, preferably about 460 nm.
  • the G phosphor can be selected from Lu 3 Al 5 O 12 :Ce 3+ Phosphors (phosphor):
  • the excitation wavelength is 450nm, LuAG absorbs almost no violet light (absorption rate is much lower than 50%), and the emission wavelength is about 550nm.
  • Eu-doped alkaline earth silicate Phosphors phosphor
  • the comparative example uses a conventional blue LED and a white light source made of a phosphor. Since the blue peak value is high, it is difficult to form a relatively continuous spectrum, and in this embodiment, blue and violet LEDs and a plurality of phosphors are selected.
  • the white light source produced is similar to the natural light (Sunlike). As shown in Table 1, the illuminance spectrum of the white light source is P( ⁇ ), and the luminescence spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ ), which is used to characterize the spectrum of the white LED similar to the black body radiation spectrum. In the range of 380 to 780 nm, the white light source produced in this embodiment satisfies the following relationship:
  • the comparative example uses the conventional conventional blue LED and the ordinary white light source made of phosphor, the ratio
  • Cos ⁇ is used to characterize the similarity between the spectrum of the white LED and the black body radiation spectrum.
  • the white light source produced in this embodiment satisfies the following relationship:
  • 510 ⁇ 610nm is the wavelength range corresponding to the FWHM of the visual spectrum luminous efficiency V( ⁇ ) of the human visual function
  • the comparison example uses the conventional conventional blue LED and the ordinary white light source made of the phosphor, the ratio
  • the light source emitted by the white light source produced in this embodiment is closer to natural light (Sunlike).
  • Table 1 Comparison of the ratios of cos ⁇ and cos ⁇ between the white light source produced in this example and the white light source produced in the comparative example
  • the white LED package structure provided by the embodiment is made into a white light source system, which achieves less Stokes loss than the package structure of the single violet chip, has better light effect, reduces blue light hazard, and achieves high display Color index, color rendering index R1 ⁇ R15 are greater than 90; can be applied to land or air or ocean, such as local exploration, signal recognition, etc., can also be daily applications, such as liquid crystal display (LCD) and general lighting equipment
  • the backlight is especially suitable for mobile phones, camera flashes, etc.
  • the difference from Embodiment 1 is that the G phosphor and the R phosphor of the present embodiment are mixed and covered on the blue chip, and the B phosphor is separately covered on the violet chip.
  • the wavelength of the violet chip is 410 nm to 420 nm
  • the wavelength of the blue chip is 445 nm to 460 nm.
  • the B phosphor has an excitation wavelength of 390 nm, which can better absorb the violet light and emit a blue light wavelength of about 460 nm.
  • the G phosphor can be selected from Lu 3 Al 5 O 12 :Ce 3+ Phosphors: the excitation wavelength is 450 nm, LuAG hardly absorbs violet light, and the emission wavelength is about 550 nm.
  • the excitation wavelength of the G phosphor is greater than 420 nm, so the G phosphor and the R phosphor are mixed and covered on the blue chip, and the B phosphor is separately covered on the violet chip.
  • the light emission spectrum of the white light source is P( ⁇ )
  • the light emission spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ )
  • P( ⁇ max ) is the light intensity within 380 to 780 nm.
  • the maximum value, B( ⁇ max ) is the maximum intensity of the black body radiation in the range of 380 to 780 nm
  • the conventional conventional blue light source and the ordinary white light source made of the phosphor are used, and the difference value D 1 ( ⁇ ) between the spectrum of the white LED and the black body radiation spectrum is between -0.4 and -0.3.
  • a white light source made of a violet LED and a blue light chip and a plurality of phosphors of R, G and B is used, and the difference value D 1 ( ⁇ ) between the spectrum of the white LED and the black body radiation spectrum is between -0.15 and Between 0.15, that is, D 1 ( ⁇ ) is significantly smaller than the comparative example, and the luminescence spectrum is closer to natural light.
  • the illuminating spectrum of the white light source is P( ⁇ )
  • the illuminating spectrum of the black body radiation having the same color temperature as the white light source is B( ⁇ )
  • D 2 ( ⁇ ) is used to characterize the spectrum and blackbody of the white LED.
  • the difference value of the radiation spectrum, in the range of 400 to 500 nm, the white light source produced in this embodiment satisfies the following relationship:
  • D 2 ( ⁇ ) P( ⁇ )/P(550 nm)-B( ⁇ )/B(550 nm), -0.25 ⁇ D 2 ( ⁇ ) ⁇ 0.25.
  • the conventional conventional blue light LED and the ordinary white light source made of the phosphor are used, and the difference value D 2 ( ⁇ ) between the spectrum of the white light LED and the black body radiation spectrum is between -0.5 and +0.7.
  • a white light source made of a violet LED and a blue light chip and a plurality of phosphors of R, G and B is used, and the difference value D 2 between the spectrum of the white LED and the black body radiation spectrum is between -0.15 and +0.15.
  • D 2 is significantly smaller, and the luminescence spectrum is closer to natural light.
  • the two chips are fixed on the same substrate (such as a cup), and a phosphor that does not absorb violet light but absorbs blue light is selected for packaging, and in order to achieve the Sunlike spectrum, a red color with an excitation wavelength of about 450 nm is selected.
  • the phosphor and the yellow-green phosphor encapsulate the blue chip, and the blue phosphor with an excitation wavelength of 410 to 420 nm is selected to encapsulate the violet chip, thereby obtaining white light.
  • the difference from Embodiment 1 is that the GY (yellow-green) phosphor and the B phosphor of the present embodiment are mixed and covered on the violet chip, and the R phosphor is separately covered on the blue chip.
  • the wavelength of the violet chip is 410 to 420 nm
  • the wavelength of the blue chip is 445 to 460 nm.
  • the B phosphor has an excitation wavelength of 390 nm, which can better absorb the violet light and emit a blue light wavelength of about 460 nm.
  • the GY phosphor can be selected from Eu-doped alkaline earth silicate Phosphors: the maximum excitation wavelength is 410 nm, and the excitation efficiency is highest between 500 and 600 nm.
  • the maximum excitation wavelength of GY is less than 420 nm, so the GY phosphor and the B phosphor are mixed and covered on the violet chip, and the R phosphor is separately covered on the blue chip.
  • the difference from the first embodiment is that the B phosphor, the G phosphor, and the R phosphor of the present embodiment are individually covered on the V chip, the B chip, and the G chip.
  • the violet chip has a wavelength of 410 to 420 nm
  • a blue chip has a wavelength of 445 to 460 nm
  • a green chip has a wavelength of 520 to 570 nm.
  • the B phosphor has an excitation wavelength of 390 nm, which can better absorb the violet light and emit a blue light wavelength of about 460 nm.
  • the G phosphor can be selected from Lu 3 Al 5 O 12 :Ce 3+ Phosphors: the excitation wavelength is 450 nm, LuAG hardly absorbs violet light (absorption rate is much lower than 50%), and the emission wavelength is about 550 nm.
  • the R phosphor can be selected from CaAlSiN 3 :Eu 2+ (CASN) Phosphors: the two larger excitation wavelengths are about 450 nm and about 550 nm, and the emission wavelength is greater than 600 nm.
  • the B phosphor reaches the maximum excitation efficiency (above 80%) at 410 nm
  • the G phosphor reaches the maximum excitation efficiency (above 80%) at around 450 nm
  • the R phosphor reaches the maximum excitation efficiency (above 80%) at 550 nm. Therefore, the B phosphor, the G phosphor, and the R phosphor are individually covered on the V chip, the B chip, and the G chip.
  • the difference from Embodiment 1 is that the G phosphor, the R phosphor and the C (Cyan) phosphor of the present embodiment are mixed and covered on the blue chip, and the B phosphor is separately covered on the violet chip. on.
  • the wavelength of the violet chip is 410 nm to 420 nm
  • the wavelength of the blue chip is 445 nm to 460 nm.
  • B selects the excitation wavelength to be 390 nm, which can better absorb the violet light and emit a blue light wavelength of about 460 nm.
  • C selects LMGN to 490 to B: the excitation wavelength is 460 nm, and the emission wavelength is about 500 nm.
  • G can be selected as Lu 3 Al 5 O 12 :Ce 3+ Phosphors: the excitation wavelength is 450 nm, LuAG hardly absorbs violet light, and the emission wavelength is about 550 nm.
  • the excitation wavelength of the G phosphor is greater than 420 nm, so the G phosphor, the R phosphor and the C phosphor are mixed and covered on the blue chip, and the B phosphor is separately covered on the violet chip. It should be noted that the B phosphor, the G phosphor, the C phosphor, and the R phosphor may be separately covered or may be mixed and packaged.
  • the difference from the embodiment 1 is that the G phosphor and the R phosphor of the embodiment are mixed and covered on the blue chip, and the B phosphor is separately covered on the violet chip; further, a barrier is disposed on the phosphor. Protection of water vapor and air to protect the metal on the package substrate from being vulcanized.
  • the wavelength of the violet chip is 410 to 420 nm
  • the wavelength of the blue chip is 445 to 460 nm.
  • the B phosphor has an excitation wavelength of 390 nm, which can better absorb the violet light and emit a blue light wavelength of about 460 nm.
  • the G phosphor can be selected from Lu 3 Al 5 O 12 :Ce 3+ Phosphors: the excitation wavelength is 450 nm, LuAG hardly absorbs violet light (absorption rate is much lower than 50%), and the emission wavelength is about 550 nm.
  • the G phosphor excitation wavelength is greater than 420 nm, so the G phosphor and the R phosphor are mixed and covered on the blue chip, and the B phosphor is separately covered on the violet chip, so that the phosphors are spatially separated.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)

Abstract

一种白光LED封装结构，包括：基板，LED芯片以及波长转换材料层；至少两种波长的LED芯片，其中第一种LED芯片的峰值波长介于385～425nm之间，第二种芯片的峰值波长长于第一种LED芯片的峰值波长，所述波长转换材料层的发射光谱峰值波长介于440～700nm，所述波长转换材料层吸收由所述LED芯片射出的光而发出白光源。

Description

一种白光LED封装结构以及白光源*** 技术领域
本发明涉及半导体技术领域，特别涉及一种白光LED封装结构以及白光源***。
背景技术
发光二极管(英文简称LED)，是一种固体半导体发光装置。现有的LED发光装置普遍采用蓝光LED激发绿色、黄色、红色的荧光粉，以获得混合后的白光，但由于这种白光光谱不连续，导致某些显色指数低于90。并且现有蓝光芯片制作的白光LED存在明显的蓝光危害(如图1和2所示)，引起业界及消费者的广泛争论。
采用紫光芯片或者近紫光芯片激发RGB三色荧光粉可以实现连续光谱，达到类似太阳光谱的效果(如图3和4所示)。但是换成紫光芯片后从紫光到绿光或者红光的波长差别大，导致斯托克斯损失大，使得光效降低。
发明概述
技术问题
问题的解决方案
技术解决方案
为了克服现有技术的不足，本发明提供一种双芯片或者多芯片的白光LED封装结构以及白光源***，包括：一种白光LED封装结构，包括：基板，LED芯片以及波长转换材料层；其特征在于：至少两种波长的LED芯片，其中第一种LED芯片的峰值波长介于385～425nm之间，第二种芯片的峰值波长长于第一种LED芯片的峰值波长介于440～460nm之间，所述波长转换材料层的发射光谱峰值波长介于450～700nm，所述波长转换材料层吸收由所述LED芯片射出的光而发出白光源。
本发明还提供另一种白光LED封装结构以及白光源***，包括：基板，LED芯片以及波长转换材料层；其特征在于：至少两种波长的LED芯片，其中第一种LED芯片的峰值波长介于385～425nm之间，第二种芯片的峰值波长长于第一种LE D芯片的峰值波长，所述波长转换材料层包含至少两种波长的波长转换材料，其中一种波长转换材料被第一种LED芯片激发，发射光谱波长介于440～600nm，另一种波长转换材料被第二种芯片激发，发射光谱波长介于500～700nm。
优选地，设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，cosθ表征白光LED的光谱与黑体辐射光谱的相似度，在380～780nm内，白光源满足以下关系式：
Figure PCTCN2018116768-appb-000001
优选地，设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，cosα表征白光LED的光谱与黑体辐射光谱的相似度，在510～610nm内，白光源满足以下关系式：
Figure PCTCN2018116768-appb-000002
优选地，设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，P(λ max)为在380～780nm内的光强最大值，B(λ max)为在380～780nm内的黑体辐射的光强最大值，D 1(λ)表征白光LED的光谱与黑体辐射光谱的差异值，在510～610nm内，白光源满足以下关系式：D 1(λ)＝P(λ)/P(λ max)-B(λ)/B(λ max)，-0.15＜D 1(λ)＜0.15。
优选地，设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，D 2(λ)表征白光LED的光谱与黑体辐射光谱的差异值，在400～500nm内，白光源满足以下关系式：D 2(λ)＝P(λ)/P(550nm)-B(λ)/B(550nm)，-0.25＜D 2(λ)＜0.25。
优选地，所述第二种LED芯片的峰值波长介于440～460nm之间。
优选地，还包括第三种LED芯片，峰值波长介于550～570nm之间。
优选地，所述波长转换材料层至少包含两种激发发射光谱峰值波长的荧光粉。
优选地，所述波长转换材料层包含激发光谱峰值波长为400～425nm或425～460nm两种或更多种荧光粉。
优选地，所述波长转换材料层至少包含第一种、第二种、第三种不同的发射光 谱峰值波长的荧光粉。
优选地，所述波长转换材料层包含发射光谱峰值波长为450～500nm或500～600nm或600～700nm三种或更多种荧光粉。
优选地，所述波长转换材料层的激发光谱较窄，介于30～80nm。
优选地，所述波长转换材料层在第一种LED芯片的峰值波长处的激发效率是70％以下，在第二种LED芯片的峰值波长处的激发效率是80％以上。
优选地，所述任意一种波长转换材料层发射的光被另一种波长转换材料层吸收的比例50％以下。
优选地，所述一种波长转换材料层发射的光在该波长转换材料层的发射的峰值波长处，其它波长转换材料层的激发效率是70％以下。
优选地，所述波长转换材料层混合在一起或者不完全混合。
优选地，所述至少两种波长的波长转换材料在空间上分离。
优选地，提供一种白光源***，包括上述白光LED封装结构。
发明的有益效果
有益效果
与现有技术相比，本发明提供的白光LED封装结构以及白光源***，至少包括以下技术效果：
(1)比单紫光芯片的封装结构相比，实现更少的斯托克斯损失，具有更好的光效；
(2)达到高显色指数，显色指数R1～R15均大于90；
(3)减小蓝光危害。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
对附图的简要说明
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描 述概要，不是按比例绘制。
图1是目前市场主流的白光LED封装结构示意图。
图2是主流白光LED的光谱和黑体辐射光谱的对比图。
图3是近太阳光白光LED封装结构示意图。
图4是近太阳光白光LED的光谱和黑体辐射光谱的对比图。
图5是实施例1的白光LED封装结构的剖面示意图。
图6是实施例1与比较例的发光光谱曲线图。
图7是实施例2的白光LED封装结构的剖面示意图。
图8是实施例2与比较例的D 1(λ)曲线图。
图9是实施例2与比较例的D 2(λ)曲线图。
图10是实施例3的白光LED封装结构的剖面示意图。
图11是实施例4的白光LED封装结构的剖面示意图。
图12是实施例5的白光LED封装结构的剖面示意图。
图13是实施例6的白光LED封装结构的剖面示意图。
发明实施例
本发明的实施方式
下面结合示意图对本发明的白光LED封装结构进行详细的描述，在进一步介绍本发明之前，应当理解，由于可以对特定的实施例进行改造，因此，本发明并不限于下述的特定实施例。还应当理解，由于本发明的范围只由所附权利要求限定，因此所采用的实施例只是介绍性的，而不是限制性的。
除另有定义之外，本发明所使用的所有术语(包括技术术语和科学术语)具有与本发明所属领域的普通技术人员通常所理解的含义相同的含义。应进一步理解，本发明所使用的术语应被理解为具有与这些术语在本说明书的上下文和相关领域中的含义一致的含义，并且不应以理想化或过于正式的意义来理解，除本发明中明确如此定义之外。
实施例1
如图5所示，本实施例提供一种白光LED封装结构，包括：一基材(Base)；LED芯片位于基材上；波长转换材料层，位于LED芯片之上；其中LED芯片选用紫光 芯片(Violet chip)和蓝光芯片(Blue chip)，紫光芯片波长为385～425nm，优选410～420nm，蓝光芯片波长为440～460nm，优选445～460nm，波长转换材料层可以包括两种波长的波长转换材料，其中一种波长转换材料被紫光LED芯片激发，发射光谱波长介于440～600nm，另一种波长转换材料被蓝光芯片芯片激发，发射光谱波长介于500～700nm，波长转换材料的发射光谱峰值波长介于450～700nm，波长转换材料层吸收由LED芯片射出的光而发出白光源。
具体来说，所述LED芯片固在基材(Base)上，LED芯片可以选择倒装芯片和/或正装芯片和/或者垂直芯片和/或高压芯片，或者前述任意组合之一，本实施例优选倒装芯片，基材(Base)是由具备静电和浪涌防护能力的材料制成，优选地，选用ZnO或ZnO为主体(包含掺杂其它金属)或CaSrZrO 3或BaTiO 3或BaSrTiO 3等钛酸盐、锆酸盐材料，结构可以制作成多层片式压敏电阻(Multi～layer varistor)或者多层陶瓷电容器(Multi～layer ceramic capacitor)。
LED芯片的上方，披覆波长转换材料层。波长转换材料层，可以选择不同激发光谱峰值波长的荧光粉，比如激发光谱峰值波长为400～425nm或425～460nm两种或更多种荧光粉，激发光谱较窄，介于30～80nm之间；可以选择不同发射光谱峰值波长的荧光粉，比如发射光谱峰值波长为450～500nm或500～600nm或600～700nm三种或更多种荧光粉。本实施波长转换材料层优选B(Blue，蓝色)、G(Green，绿色)和R(Red，红色)三种荧光粉，B荧光粉、G荧光粉、R荧光粉完全混合覆盖在紫光芯片和蓝光芯片上。B荧光粉选择激发波长为390nm，能更好地吸收紫光，发射波长450～500nm，优选460nm左右的蓝光波长；G荧光粉可选择Lu 3Al 5O 12：Ce 3+Phosphors(荧光粉)：激发波长为450nm，LuAG几乎不吸收紫光(吸收率大大低于50％)，发射波长为550nm左右；或者选择掺Eu的碱土硅酸盐Phosphors(荧光粉)：最大激发波长410nm，发射波长500～600nm之间，优选540～560nm；R荧光粉可选择AEC：Eu 2+(AE＝Ca and Sr)Phosphors(荧光粉)，其中以AE＝Ca效果最佳：激发波长在450nm左右，在410～420nm的条件下，波长强度较小，即在该410～420nm波长处，该R荧光粉的激发效率是70％以下；发射波长600nm以上，优选600～700nm。
如图6所示，比较例选用常规的蓝光LED以及荧光粉制作的白光源，由于其蓝 光峰值较高，很难形成较为连续的光谱，而本实施例选用蓝光和紫光LED以及多种荧光粉制作的白光源，发光光谱比较接近自然光(Sunlike)。如表1所示，设白光源的发光光谱为P(λ)，与白光源具有相同色温的黑体辐射的发光光谱为B(λ)，cosθ用于表征白光LED的光谱与黑体辐射光谱的相似度，在380～780nm范围内，本实施例制作的白光源满足以下关系式：
Figure PCTCN2018116768-appb-000003
而比较例选用现有常规的蓝光LED以及荧光粉制作的普通白光源，比值
Figure PCTCN2018116768-appb-000004
cosα用于表征白光LED的光谱与黑体辐射光谱的相似度，在510～610nm范围内，本实施例制作的白光源满足以下关系式：
Figure PCTCN2018116768-appb-000005
其中510～610nm为人眼视觉函数之明视觉光谱光视效率V(λ)的FWHM对应的波长范围，而比较例选用现有常规的蓝光LED以及荧光粉制作的普通白光源，比值
Figure PCTCN2018116768-appb-000006
由此可以看出，本实施例制作的白光源发出的发光光谱比较接近自然光(Sunlike)。
表1：本实施例制作的白光源与比较例制作的白光源的比值cosθ、cosα对比
Figure PCTCN2018116768-appb-000007
本实施例提供的白光LED封装结构制作成白光源***，比单紫光芯片的封装结构相比，实现更少的斯托克斯损失，具有更好的光效；减小蓝光危害；达到高显色指数，显色指数R1～R15均大于90；可以适用于在陆路上或者空中或者海洋上等诸如局部探照、信号识别等，也可以是日常应用，诸如液晶显示器(LCD)以及一般照明设备的背光，特别适用于手机、相机闪光灯等。
实施例2
如图7所示，与实施例1的区别在于，本实施例的G荧光粉和R荧光粉混合覆盖在蓝光芯片上，而B荧光粉单独覆盖在紫光芯片上。具体来说，紫光芯片波长为410nm～420nm，蓝光芯片波长为445nm～460nm。B荧光粉选择激发波长为390nm，能更好地吸收紫光，发射出460nm左右的蓝光波长。G荧光粉可选择Lu 3Al 5O 12：Ce 3+Phosphors：激发波长为450nm，LuAG几乎不吸收紫光，发射波长为550nm左右。R荧光粉可选择AEC：Eu 2+(AE＝Ca and Sr)Phosphors，其中以AE＝Ca效果最佳：激发波长在450nm左右，激发效率较高(高于80％)，在410nm～420nm的条件下，波长强度较小，激发效率较低(低于70％)；发射波长大于600nm。G荧光粉激发波长大于420nm，所以将G荧光粉和R荧光粉混合覆盖在蓝光芯片上，B荧光粉单独覆盖在紫光芯片上。
如图8所示，设白光源的发光光谱为P(λ)，与白光源具有相同色温的黑体辐射的发光光谱为B(λ)，P(λ max)为在380～780nm内的光强最大值，B(λ max)为在380～780nm内的黑体辐射的光强最大值，D 1(λ)用于表征白光LED的光谱与黑体辐射光谱的差异值，在510～610nm内，即人眼明视觉函数的半波宽范围内，本实施例制作的白光源满足以下关系式：D 1(λ)＝P(λ)/P(λ max)-B(λ)/B(λ max)，-0.15＜D 1(λ)＜0.15。而比较例选用现有常规的蓝光LED以及荧光粉制作的普通白光源，其白光LED的光谱与黑体辐射光谱的差异值D 1(λ)介于-0.4～-0.3之间。由此可见，本实施例选用紫光LED和蓝光芯片以及R、G和B多种荧光粉制作的白光源，其白光LED的光谱与黑体辐射光谱的差异值D 1(λ)介于-0.15～0.15之间，即相对于比较例，D 1(λ)明显较小，发光光谱比较接近自然光。
如图9所示，设白光源的发光光谱为P(λ)，与白光源具有相同色温的黑体辐射的发光光谱为B(λ)，D 2(λ)用于表征白光LED的光谱与黑体辐射光谱的差异值， 在400～500nm范围内，本实施例制作的白光源满足以下关系式：
D 2(λ)＝P(λ)/P(550nm)-B(λ)/B(550nm)，-0.25＜D 2(λ)＜0.25。而比较例选用现有常规的蓝光LED以及荧光粉制作的普通白光源，其白光LED的光谱与黑体辐射光谱的差异值D 2(λ)介于-0.5～+0.7之间。由此可见，本实施例选用紫光LED和蓝光芯片以及R、G和B多种荧光粉制作的白光源，其白光LED的光谱与黑体辐射光谱的差异值D 2介于-0.15～+0.15之间，即相对于比较例，D 2明显较小，发光光谱比较接近自然光。
常规的蓝光LED以及荧光粉制作的普通白光源，其蓝光芯片能量转化率较高，光效较好，但是由于其蓝光峰值较高，比较难形成较为连续的光谱，而紫光芯片可实现如同Sunlike的光谱的，但是光效却较低。因此，本实施例将这两种芯片固在同一个基材上(如碗杯)，选择不吸收紫光但吸收蓝光的荧光粉进行封装，同时为了达到Sunlike光谱，选择激发波长在450nm左右的红色荧光粉和黄绿色荧光粉对蓝光芯片进行封装，选择激发波长在410～420nm的蓝色荧光粉对紫光芯片进行封装，进而得到白光。
实施例3
如图10所示，与实施例1的区别在于，本实施例的GY(黄绿)荧光粉和B荧光粉混合覆盖在紫光芯片上，而R荧光粉单独覆盖在蓝光芯片上。具体来说，紫光芯片波长为410～420nm，蓝光芯片波长为445～460nm。B荧光粉选择激发波长为390nm，能更好地吸收紫光，发射出460nm左右的蓝光波长。GY荧光粉可选择掺Eu的碱土硅酸盐Phosphors：最大激发波长410nm，发射波长500～600nm之间激发效率达到最高。R荧光粉可选择AEC：Eu 2+(AE＝Ca and Sr)Phosphors，其中以AE＝Ca效果最佳：激发波长在450nm左右，在410～420nm的条件下，波长强度较小，激发效率较低(低于70％)；发射波长大于600nm。GY最大激发波长小于420nm，所以将GY荧光粉和B荧光粉混合覆盖在紫光芯片上，R荧光粉单独覆盖在蓝光芯片上。
实施例4
如图11所示，与实施例1的区别在于，本实施例的B荧光粉、G荧光粉、R荧光粉分别单独覆盖在V芯片、B芯片、G芯片上。具体来说，紫光芯片波长410～420 nm，蓝光芯片波长445～460nm，绿光芯片波长520～570nm。B荧光粉选择激发波长为390nm，能更好地吸收紫光，发射出460nm左右的蓝光波长。G荧光粉可选择Lu 3Al 5O 12：Ce 3+Phosphors：激发波长为450nm，LuAG几乎不吸收紫光(吸收率大大低于50％)，发射波长为550nm左右。R荧光粉可选择CaAlSiN 3：Eu 2+(CASN)Phosphors：较大的两个激发波长为450nm左右和550nm左右，发射波长大于600nm。B荧光粉在410nm达到最大激发效率(高于80％)，G荧光粉在450nm左右达到最大激发效率(高于80％)，R荧光粉在550nm达到最大激发效率(高于80％)。因而B荧光粉、G荧光粉、R荧光粉分别单独覆盖在V芯片、B芯片、G芯片上。
实施例5
如图12所示，与实施例1的区别在于，本实施例的G荧光粉、R荧光粉和C(青色，Cyan)荧光粉混合覆盖在蓝光芯片上，而B荧光粉单独覆盖在紫光芯片上。具体来说，紫光芯片波长为410nm～420nm，蓝光芯片波长为445nm～460nm。B选择激发波长为390nm，能更好地吸收紫光，发射出460nm左右的蓝光波长。C选择LMGN～490～B：激发波长为460nm，发射波长为500nm左右。G可选择Lu 3Al 5O 12：Ce 3+Phosphors：激发波长为450nm，LuAG几乎不吸收紫光，发射波长为550nm左右。R可选择AEC：Eu 2+(AE＝Ca and Sr)Phosphors，其中以AE＝Ca效果最佳：激发波长在450nm左右，在410～420nm的条件下，波长强度较小；发射波长大于600nm。G荧光粉激发波长大于420nm，所以将G荧光粉、R荧光粉和C荧光粉混合覆盖在蓝光芯片上，B荧光粉单独覆盖在紫光芯片上。需要说明的是，B荧光粉、G荧光粉、C荧光粉、R荧光粉可分开覆盖，也可以全部混合封装。
实施例6
如图13所示，与实施例1的区别在于，本实施例的G荧光粉和R荧光粉混合覆盖在蓝光芯片上，B荧光粉单独覆盖在紫光芯片上；此外在荧光粉上设置一阻隔水汽和空气的保护层(Protection)，保护封装基材(Base)上的金属不被硫化。具体来说，紫光芯片波长为410～420nm，蓝光芯片波长为445～460nm。B荧光粉选择激发波长为390nm，能更好地吸收紫光，发射出460nm左右的蓝光波长。G荧光粉可选择Lu 3Al 5O 12：Ce 3+Phosphors：激发波长为450nm，LuAG几乎不吸收紫光 (吸收率大大低于50％)，发射波长为550nm左右。R可选择AEC：Eu 2+(AE＝Ca and Sr)Phosphors，其中以AE＝Ca效果最佳：激发波长在450nm左右，在410～420nm的条件下，波长强度较小；发射波长大于600nm。G荧光粉激发波长大于420nm，所以将G荧光粉和R荧光粉混合覆盖在蓝光芯片上，B荧光粉单独覆盖在紫光芯片上，即使得各荧光粉在空间上分离。
应当理解的是，上述具体实施方案仅为本发明的部分优选实施例，以上实施例还可以进行各种组合、变形。本发明的范围不限于以上实施例，凡依本发明所做的任何变更，皆属本发明的保护范围之内。

Claims (19)

  1. 一种白光LED封装结构，包括：基板，LED芯片以及波长转换材料层；其特征在于：至少两种波长的LED芯片，其中第一种LED芯片的峰值波长介于385～425nm之间，第二种芯片的峰值波长长于第一种LED芯片的峰值波长，所述波长转换材料层的发射光谱峰值波长介于440～700nm，所述波长转换材料层吸收由所述LED芯片射出的光而发出白光源。
  2. 一种白光LED封装结构，包括：基板，LED芯片以及波长转换材料层；其特征在于：至少两种波长的LED芯片，其中第一种LED芯片的峰值波长介于385～425nm之间，第二种芯片的峰值波长长于第一种LED芯片的峰值波长，所述波长转换材料层包含至少两种波长的波长转换材料，其中一种波长转换材料被第一种LED芯片激发，发射光谱波长介于440～600nm，另一种波长转换材料被第二种芯片激发，发射光谱波长介于500～700nm。
  3. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，cosθ表征白光LED的光谱与黑体辐射光谱的相似度，在380～780nm内，白光源满足以下关系式：
    Figure PCTCN2018116768-appb-100001
    其中
    Figure PCTCN2018116768-appb-100002
  4. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，cosα表征白光LED的光谱与黑体辐射光谱的相似度，在510～610nm内，白光源满足以下关系式：
    Figure PCTCN2018116768-appb-100003
    其中
    Figure PCTCN2018116768-appb-100004
  5. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑 体辐射的发光光谱为B(λ)，P(λ max)为在380～780nm内的光强最大值，B(λ max)为在380～780nm内的黑体辐射的光强最大值，D 1(λ)表征白光LED的光谱与黑体辐射光谱的差异值，在510～610nm内，白光源满足以下关系式：D 1(λ)＝P(λ)/P(λ max)-B(λ)/B(λ max)，-0.15＜D 1(λ)＜0.15。
  6. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：设所述白光源的发光光谱为P(λ)，与所述白光源具有相同色温的黑体辐射的发光光谱为B(λ)，D 2(λ)表征白光LED的光谱与黑体辐射光谱的差异值，在400～500nm内，白光源满足以下关系式：D 2(λ)＝P(λ)/P(550nm)-B(λ)/B(550nm)，-0.25＜D 2(λ)＜0.25。
  7. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：所述第二种LED芯片的峰值波长介于440～460nm之间。
  8. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：还包括第三种LED芯片，峰值波长介于550～570nm之间。
  9. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：所述波长转换材料层至少包含两种激发发射光谱峰值波长的荧光粉。
  10. 根据权利要求9所述的一种白光LED封装结构，其特征在于：所述波长转换材料层包含激发光谱峰值波长为400～425nm或425～460nm两种或更多种荧光粉。
  11. 根据权利要求1或2所述的一种白光LED封装结构，其特征在于：所述波长转换材料层至少包含第一种、第二种、第三种不同的发射光谱峰值波长的荧光粉。
  12. 根据权利要求11所述的一种白光LED封装结构，其特征在于：所述波长转换材料层包含发射光谱峰值波长为450～500nm或500～600nm或600～700nm三种或更多种荧光粉。
  13. 根据权利要求1所述的一种白光LED封装结构，其特征在于：所述波长转换材料层的激发光谱较窄，介于30～80nm之间。
  14. 根据权利要求1所述的一种白光LED封装结构，其特征在于：所述波长转换材料层在第一种LED芯片的峰值波长处的激发效率是70％以下，在第二种LED芯片的峰值波长处的激发效率是80％以上。
  15. 根据权利要求11所述的一种白光LED封装结构，其特征在于：所述任意一种波长转换材料层发射的光被另一种波长转换材料层吸收的比例50％以下。
  16. 根据权利要求11所述的一种白光LED封装结构，其特征在于：所述一种波长转换材料层发射的光在该波长转换材料层的发射的峰值波长处，其它波长转换材料层的激发效率是70％以下。
  17. 根据权利要求2所述的一种白光LED封装结构，其特征在于：所述波长转换材料层混合在一起或者不完全混合。
  18. 根据权利要求2所述的一种白光LED封装结构，其特征在于：所述至少两种波长的波长转换材料在空间上分离。
  19. 一种白光源***，其特征在于：包括根据权利要求1至权利要求18中的任一项所述的白光LED封装结构。
PCT/CN2018/116768 2017-12-21 2018-11-21 一种白光led封装结构以及白光源*** WO2019120026A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020526212A JP7046178B2 (ja) 2017-12-21 2018-11-21 白色光ｌｅｄパッケージ構造及び白色光源システム
US16/899,413 US11462517B2 (en) 2017-12-21 2020-06-11 Light-emitting diode device and white light emitting system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711397732.9A CN108183099B (zh) 2017-12-21 2017-12-21 一种白光led封装结构以及白光源***
CN201711397732.9 2017-12-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/899,413 Continuation-In-Part US11462517B2 (en) 2017-12-21 2020-06-11 Light-emitting diode device and white light emitting system

Publications (1)

Publication Number Publication Date
WO2019120026A1 true WO2019120026A1 (zh) 2019-06-27

Family

ID=62547033

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/116768 WO2019120026A1 (zh) 2017-12-21 2018-11-21 一种白光led封装结构以及白光源***

Country Status (5)

Country Link
US (1) US11462517B2 (zh)
JP (1) JP7046178B2 (zh)
CN (2) CN113178437B (zh)
TW (1) TWI683456B (zh)
WO (1) WO2019120026A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4053922A4 (en) * 2019-12-02 2023-12-20 Seoul Semiconductor Co., Ltd. LIGHT EMITTING DEVICE AND LIGHTING DEVICE THEREFOR

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113178437B (zh) * 2017-12-21 2023-08-11 厦门市三安光电科技有限公司 一种白光led封装结构以及白光源***
CN108922955B (zh) * 2018-06-25 2024-04-16 欧普照明股份有限公司 一种光源模组及包括该光源模组的照明装置
CN109462913A (zh) * 2018-10-25 2019-03-12 深圳市光迹科技有限公司 一种优化灯珠光谱的控制方法及***
CN109256458A (zh) * 2018-11-09 2019-01-22 深圳市迈森光电科技有限公司 一种led产品封装结构及其封装方法
CN115046146B (zh) * 2019-03-28 2023-05-23 厦门三安光电有限公司 一种照明器材
CN112216683A (zh) * 2019-07-10 2021-01-12 葳天科技股份有限公司 发光二极管混光结构
US10971660B2 (en) * 2019-08-09 2021-04-06 Eyesafe Inc. White LED light source and method of making same
CN110970409A (zh) * 2019-12-19 2020-04-07 宁波升谱光电股份有限公司 一种降低蓝光危害的cob光源器件
CN212160290U (zh) * 2020-03-26 2020-12-15 华为技术有限公司 背光模组、液晶显示屏及终端
CN111963911A (zh) * 2020-08-14 2020-11-20 贵州西能电光科技发展有限公司 一种led白光光源和led白光光源装置
CN112608750A (zh) * 2020-12-16 2021-04-06 中国科学院长春应用化学研究所 一种全光谱led荧光粉组合物以及全光谱白光led器件
EP4105986A1 (de) * 2021-06-16 2022-12-21 Siteco GmbH Leuchtmittel zur erzeugung weissen lichts
TWI790083B (zh) * 2022-01-04 2023-01-11 張喆堯 全光譜led發光裝置及其照明燈具
CN116825932A (zh) * 2023-06-25 2023-09-29 江苏博睿光电股份有限公司 一种led器件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1866550A (zh) * 2005-05-18 2006-11-22 宏齐科技股份有限公司 多波长白光发光二极管
US20100148191A1 (en) * 2008-12-16 2010-06-17 Lednovation, Inc. High Luminous Flux Warm White Solid State Lighting Device
CN104303298A (zh) * 2012-04-06 2015-01-21 皇家飞利浦有限公司 白色发光模块
CN108183099A (zh) * 2017-12-21 2018-06-19 厦门市三安光电科技有限公司 一种白光led封装结构以及白光源***

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4114331B2 (ja) * 2001-06-15 2008-07-09 豊田合成株式会社 発光装置
JP4274843B2 (ja) * 2003-04-21 2009-06-10 シャープ株式会社 Ｌｅｄデバイスおよびそれを用いた携帯電話機器、デジタルカメラおよびｌｃｄ表示装置
CN1677702A (zh) * 2004-03-29 2005-10-05 斯坦雷电气株式会社 发光二极管
KR100658700B1 (ko) * 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Ｒｇｂ 발광소자와 형광체를 조합한 발광장치
JP2007258202A (ja) 2006-03-20 2007-10-04 Showa Denko Kk 照明光源
KR100875443B1 (ko) * 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
EP2056366B1 (en) * 2006-08-14 2013-04-03 Fujikura Ltd. Light emitting device and illumination device
DE102007043355A1 (de) * 2007-09-12 2009-03-19 Lumitech Produktion Und Entwicklung Gmbh LED-Modul, LED-Leuchtmittel und LED Leuchte für die energie-effiziente Wiedergabe von weißem Licht
US8877524B2 (en) * 2008-03-31 2014-11-04 Cree, Inc. Emission tuning methods and devices fabricated utilizing methods
CN101872825B (zh) * 2010-04-29 2013-05-15 华侨大学 制备低色温高显色性大功率白光led的方法
EP3176839B1 (en) * 2011-03-15 2019-07-17 Kabushiki Kaisha Toshiba White light source
WO2012144087A1 (ja) * 2011-04-22 2012-10-26 株式会社東芝 白色光源およびそれを用いた白色光源システム
US8704440B2 (en) * 2011-07-06 2014-04-22 Osram Sylvania Inc. LED lighting device having a phosphor composition
EP4044264B1 (en) * 2011-10-24 2024-01-03 Seoul Semiconductor Co., Ltd. White light source and white light source system using white light source
US9423118B2 (en) * 2011-11-15 2016-08-23 Panasonic Intellectual Property Management Co., Ltd. Light-emitting module and lamp using same
US9055647B2 (en) * 2011-12-16 2015-06-09 Marvell World Trade Ltd. Current balancing circuits for light-emitting-diode-based illumination systems
EP2637224B1 (en) 2012-03-09 2019-04-03 Panasonic Intellectual Property Management Co., Ltd. Light emitting device, illumination apparatus and system using same
TWI505440B (zh) * 2012-06-04 2015-10-21 Lextar Electronics Corp 光源模組
US9666766B2 (en) * 2013-08-21 2017-05-30 Pacific Light Technologies Corp. Quantum dots having a nanocrystalline core, a nanocrystalline shell surrounding the core, and an insulator coating for the shell
JP6284738B2 (ja) 2013-10-18 2018-02-28 シチズン電子株式会社 半導体発光装置
JP6223479B2 (ja) * 2013-12-17 2017-11-01 フィリップス ライティング ホールディング ビー ヴィ 固体発光体パッケージ、発光デバイス、可撓性ｌｅｄストリップ及び照明器具
JP2017011098A (ja) 2015-06-22 2017-01-12 日亜化学工業株式会社 発光装置
US20170014538A1 (en) * 2015-07-14 2017-01-19 Juha Rantala LED structure and luminaire for continuous disinfection
DE202015105686U1 (de) * 2015-10-26 2017-01-27 Tridonic Gmbh & Co Kg Weißes Licht abstrahlendes LED-Modul
KR20170070344A (ko) 2015-12-11 2017-06-22 삼성전자주식회사 백색 발광장치 및 디스플레이 장치
JP6481663B2 (ja) * 2016-06-29 2019-03-13 日亜化学工業株式会社 発光装置及び植物栽培方法
CN106497557B (zh) * 2016-11-02 2019-02-05 河北利福光电技术有限公司 一种高效稳定的短波长硅酸盐绿色荧光粉及其制备方法与应用

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1866550A (zh) * 2005-05-18 2006-11-22 宏齐科技股份有限公司 多波长白光发光二极管
US20100148191A1 (en) * 2008-12-16 2010-06-17 Lednovation, Inc. High Luminous Flux Warm White Solid State Lighting Device
CN104303298A (zh) * 2012-04-06 2015-01-21 皇家飞利浦有限公司 白色发光模块
CN108183099A (zh) * 2017-12-21 2018-06-19 厦门市三安光电科技有限公司 一种白光led封装结构以及白光源***

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4053922A4 (en) * 2019-12-02 2023-12-20 Seoul Semiconductor Co., Ltd. LIGHT EMITTING DEVICE AND LIGHTING DEVICE THEREFOR
US11870016B2 (en) 2019-12-02 2024-01-09 Seoul Semiconductor Co., Ltd. Light emitting device and lighting apparatus including the same

Also Published As

Publication number Publication date
CN108183099A (zh) 2018-06-19
JP2021512482A (ja) 2021-05-13
CN113178437A (zh) 2021-07-27
US20200303358A1 (en) 2020-09-24
JP7046178B2 (ja) 2022-04-01
CN108183099B (zh) 2021-06-15
TW201929269A (zh) 2019-07-16
TWI683456B (zh) 2020-01-21
US11462517B2 (en) 2022-10-04
CN113178437B (zh) 2023-08-11

Similar Documents

Publication Publication Date Title
WO2019120026A1 (zh) 一种白光led封装结构以及白光源***
US11933461B2 (en) Full spectrum white light emitting devices
CN105814699B (zh) 具有高显色性的白光发光装置
RU2623682C2 (ru) Модуль излучения белого света
US10084119B2 (en) Light-emitting device
US9024335B2 (en) Multi-package white LED device
JP2017163151A (ja) フルスペクトル発光装置
JP2017531324A (ja) 発光装置
CN108767097B (zh) 紫外激发全光谱led及其应用
US11978833B2 (en) White light LED package structure and white light source system
KR101706600B1 (ko) 고연색성 백색 발광 소자
KR102130817B1 (ko) 고연색성 백색 발광 소자
KR101652258B1 (ko) 고연색성 백색 발광 소자
KR101855391B1 (ko) 고연색성 백색 발광 소자
US11887973B2 (en) Full spectrum white light emitting devices
CN116632141A (zh) 一种发光装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18891431

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020526212

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18891431

Country of ref document: EP

Kind code of ref document: A1