WO2019109200A1 - 微型led器件用上基板、微型led器件以及微型led显示装置 - Google Patents
微型led器件用上基板、微型led器件以及微型led显示装置 Download PDFInfo
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- WO2019109200A1 WO2019109200A1 PCT/CN2017/114383 CN2017114383W WO2019109200A1 WO 2019109200 A1 WO2019109200 A1 WO 2019109200A1 CN 2017114383 W CN2017114383 W CN 2017114383W WO 2019109200 A1 WO2019109200 A1 WO 2019109200A1
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- micro led
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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Definitions
- This document relates to an upper substrate for a micro LED device, particularly an upper substrate of a flexible micro LED device (Micro-LED display), and a micro LED device (also referred to as Open Cell) and a micro LED display device produced using the upper substrate.
- a micro LED device particularly an upper substrate of a flexible micro LED device (Micro-LED display), and a micro LED device (also referred to as Open Cell) and a micro LED display device produced using the upper substrate.
- Micro-LED (micro-LED) technology that is, LED miniaturization and matrix technology, refers to a high-density and small-sized LED array integrated on one chip. For example, each pixel of the LED display can be addressed and individually driven to illuminate. Seen as a miniature version of an outdoor LED display that reduces pixel distance from millimeters to micrometers.
- the Micro LED display is an LED display driver circuit fabricated by a normal CMOS integrated circuit (Complementary Metal-Oxide-Semiconductor) manufacturing process, and then an LED array is fabricated on the integrated circuit by using an MOCVD machine. Thereby a miniature display, that is to say a reduced version of the LED display, is realized.
- CMOS integrated circuit Complementary Metal-Oxide-Semiconductor
- TFT-LCD Thin Film Transistor Liquid Crystal Display
- CCFL Cold Cathode Fluorescent Lamp
- the TFT-LCD non-self-luminous display principle results in a transmittance of the liquid crystal panel (open cell) of about 7% or less, resulting in a low photoelectric efficiency of the TFT-LCD.
- white LEDs still provide less color saturation than trichromatic LEDs, and most TFT-LCD products are only about 72% NTSC (National Television Standards Committee (US) National Television Standards Committee).
- NTSC National Television Standards Committee (US) National Television Standards Committee
- US National Television Standards Committee
- the brightness of TFT-LCD cannot be increased to more than 1000 nits, resulting in low image and color recognition, which is a major defect in its application. Therefore, another technology that directly utilizes three primary color LEDs as LED display or Micro LED Display of self-luminous display point pixels is also under development.
- the micro LED display is a new generation of display technology
- the structure is a miniaturized LED array, that is, the LED structure design is thinned, miniaturized and arrayed, so that the volume is about the current mainstream.
- the LED structure design is thinned, miniaturized and arrayed, so that the volume is about the current mainstream.
- 1% of the LED size each pixel can be addressed and individually driven to illuminate, reducing the distance of the pixel from the original millimeter to the micron.
- Micro LED advantages include low power consumption, high brightness, ultra high resolution and color saturation, fast response, ultra power saving, long life, high efficiency, etc., and its power consumption is about LCD. 10%, 50% of OLED. Compared with OLEDs, which are also self-luminous displays, Micro LEDs are 30 times brighter than OLEDs and have resolutions up to 1500 PPI (pixel density), which is equivalent to more than five times that of Apple Watch using OLED panels up to 300 PPI. In addition, it has one of the advantages of good material stability and no image imprinting.
- OLEDs have improved LCD panel thickness, need to be matched with backlight module adjustment, poor black level contrast, etc., and can achieve high contrast ratio.
- the OLED must reduce the white picture and high brightness display to achieve power saving effect.
- the wide color gamut characteristics of OLEDs are also not much different from KSF or quantum dots.
- Micro LED is composed of a large number of micro LED arrays. In addition to high brightness, ultra high resolution and color saturation, each pixel can be driven independently, and it also has the advantages of power saving and fast response.
- Micro LEDs are micron-sized to the micron level, providing high-brightness, low power consumption, ultra-high resolution and color saturation for every pixel (pixel) address control and single-point drive illumination. In the future, it can even be bonded to a flexible substrate to achieve flexible features such as OLED, and the application range is wider and more.
- Figure 1 shows a comparison of the principle of operation of the three major displays.
- Patent Document 1 WO 2014/093065
- the display panel may include a pixel area and a non-pixel area A thin film transistor substrate of the domain.
- the display area includes an array of bank openings and a bottom electrode array within the array of bank openings.
- the ground line is located in the non-pixel region, and the ground bond line array extends between the bank openings in the pixel region and is electrically connected to the ground line in the non-pixel region.
- a micro LED display structure is also described in Patent Document 2 (WO 2014/093063), which specifically relates to a reflective bank structure of a light emitting device.
- the reflective bank structure can include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer, wherein each bank opening includes a bottom surface and a sidewall.
- the reflective layer spans a sidewall of each of the bank openings in the barrier openings in the insulating layer.
- the method for solving the heat dissipation problem of electronic components in the industry can be divided into active heat dissipation and passive heat dissipation.
- Active cooling includes forced cooling and electromagnetic jet cooling.
- the forced cooling of the fan is to generate strong air convection by the fan, and the hot air is led out of the heat source or the body of the lamp for heat dissipation.
- the use of a fan to forcibly dissipate heat can effectively dissipate heat by regulating the fan speed. If the electronic space of a computer or a server is sufficient, the fan is forced to dissipate heat. This method is not only low cost but also a very effective heat dissipation method.
- Passive heat dissipation includes natural convection heat dissipation and loop heat pipe heat dissipation.
- Natural convection heat dissipation is through direct contact with air through heat sinks such as heat sink fins, lamp housings, and system boards. The air around the radiator becomes hot air by absorbing heat, and then the hot air rises, and the cold air drops, which naturally drives the air to generate convection to achieve heat dissipation.
- heat sinks such as heat sink fins, lamp housings, and system boards.
- the air around the radiator becomes hot air by absorbing heat, and then the hot air rises, and the cold air drops, which naturally drives the air to generate convection to achieve heat dissipation.
- the heat exchange driving force of this method only comes from the temperature difference between the heat source and the surrounding air, and the contact area is increased to improve the heat dissipation effect.
- the LED light source is composed of LED, heat dissipation structure, driver and lens, so heat dissipation is an important part. If the LED does not dissipate well, its lifetime will also be affected.
- the heat has a great influence on high-brightness LEDs.
- heat is concentrated in a chip having a small size, and an increase in temperature of the chip causes a non-uniform distribution of thermal stress, a luminous efficiency of the chip, and a decrease in lasing efficiency of the phosphor.
- the temperature exceeds a certain value, the device failure rate increases exponentially.
- Statistics show that for every 2 °C rise in component temperature, reliability drops by 10%. Further, when a plurality of LEDs are densely arranged to constitute a white light illumination system, the heat dissipation problem is more serious. Addressing thermal management issues has become a prerequisite for high-brightness LED applications.
- chip size there is a certain relationship between chip size and heat dissipation.
- the most straightforward way to increase the brightness of a power LED is to increase the input power, and in order to prevent saturation of the active layer, the size of the p-n junction must be increased accordingly.
- Increasing the input power necessarily increases the junction temperature, which in turn reduces the quantum efficiency.
- the increase in single-tube power depends on the ability of the device to derive heat from the pn junction.
- the chip size and junction area are separately increased while maintaining the current chip material, structure, packaging process, current density on the chip, and equivalent heat dissipation conditions. The temperature will continue to rise.
- micro LED display device is composed of a large number of micro LED arrays, so the heat dissipation problem must be considered when designing the structure of the micro LED display device.
- the heat-conducting materials referred to herein refer to substances that can transfer heat. They can be metals or synthetic materials, including silicone grease and thermal grease (epoxy resin). Add thermal conductive particles), thermal double-sided adhesive, thermal pad (divided into silicon material and non-silicon material), phase change material, etc. These materials have their own advantages and disadvantages, and the use is different.
- Thermal conductivity is one of the thermophysical parameters of a material and is the most important thermophysical parameter of a solid.
- the thermal conductivity of low thermal conductivity materials is an important parameter for characterizing building energy conservation and physical properties of thermal insulation materials. The accurate measurement of its parameter values has very important theoretical and practical value.
- Thermal Gap Filler including Thermal Conductive Pad, Thermal Tape, Thermal Grease, and the like.
- the principle of filling the gap between the chip or the heating element and the heat sink is used as a path for providing thermal energy conduction and filling a gap of 0.125 mm to 10 mm. It can help transfer the thermal energy of the chip, allowing it to be effectively conducted to the heat sink fins, thereby reducing the chip temperature, improving chip life and performance.
- the general thermal module includes thermal adhesive, heat sink fins and a fan.
- the way of heat conduction is from the surface of the chip, through thermal conductive rubber (Thermal Gap Filler), thermal tape (Thermal Tape) or thermal grease (Thermal Grease) and other thermal materials to improve the efficiency of conduction to the heat sink fins, the thermal conductivity of the heat sink fins The better the area and the larger the area, the stronger the heat dissipation effect.
- a cooling fan is often added to the heat dissipation module to bring the thermal energy to the discrete thermal module more quickly.
- Such applications are commonly used in notebook computers (Laptop Computer), communication devices (Telecom Devices), LCD TVs (LCD TVs), LED lighting devices, Power Supply Unit PSUs, and DDR Memory Modules. And other products.
- the thermal conductive adhesive is a heat transfer (Heat Transferring) medium, usually in the following types: thermal conductive adhesive (heat-dissipating adhesive), which is liquid or solid, and can be made of epoxy resin, ceramic powder or acrylic adhesive; Thermal tape), which is in the form of single-sided or double-sided tape, which is based on acrylic, silicone-based, and fiberglass mesh reinforcement materials; thermal silica gel (heat-dissipating silica gel), which is mostly solid, It has a liquid form and is composed of a silica gel material; a heat-conductive silicone sheet (heat-dissipating silica gel sheet) which is in a solid form and is composed of a silica gel material.
- thermal conductive adhesive heat-dissipating adhesive
- Thermal tape which is in the form of single-sided or double-sided tape, which is based on acrylic, silicone-based, and fiberglass mesh reinforcement materials
- thermal silica gel (heat-dissipating silica gel), which is
- epoxy resin is a kind of thermal conductive adhesive. It has been reported that an epoxy resin has been developed to have a thermal conductivity and insulation of up to 7.3 W/mK. It can be used for heat dissipation applications such as engines, LED lighting, power supply components, and semiconductor packages.
- graphene has been attracting attention as a new type of material in recent years.
- Graphene is a carbonaceous material with a two-dimensional honeycomb crystal structure formed by a single layer of carbon atoms SP 2 hybridized, and has unique electronic properties such as quantum Hall effect, field effect, Fermi effect, and higher Light transmittance and high electron mobility.
- quantum Hall effect quantum Hall effect
- field effect Fermi effect
- Fermi effect and higher Light transmittance and high electron mobility
- graphene also has a very excellent heat transfer coefficient.
- the thermal radiation emissivity of graphene is 0.99 in the infrared range, very close to the thermal radiation emissivity of theoretical blackbody radiation. Therefore, graphene has considerable potential as a heat radiation heat dissipating material. Compared with the thermal emissivity of about 0.09 for copper and about 0.02 for aluminum, graphene has both heat conduction and heat radiation characteristics in heat dissipation applications.
- Thermal conductivity k also known as thermal conductivity, refers to the ability of a material to directly conduct heat. Thermal conductivity is defined as the amount of heat that is directly transmitted by a unit of unit length and length in a unit temperature difference and unit time. The unit of thermal conductivity is Wami -1 Kelvin- 1 . The thermal conductivity of some materials is shown in Table 1 below. It can be seen from Table 1 that graphene has excellent heat transfer ability.
- Patent Document 3 discloses a graphene heat-dissipating film made of graphite, graphene, and metal ions.
- the patent document utilizes the combination of graphene and metal ions to form a vertical and horizontal graphene distribution pattern to achieve overall heat dissipation and heat conduction, thereby having a good heat dissipation effect.
- This patent document focuses on the interaction between graphite, graphene and metal ions. It is believed that the graphene heat-dissipating film formed by three materials has stable structure and can be widely used in various places.
- the color portion is formed by a color filter (as shown in Fig. 3), which accounts for about 20% of the cost of the TFT-LCD.
- a color filter as shown in Fig. 3
- the most urgent part of the current need for improvement and the highest level of technical requirements is the Black Matrix part.
- the main functions of the black matrix are the following three points. (1) Preventing color resists (three-color photoresists such as red, green, and blue) from mixing: When the backlight of a TFT-LCD passes through a three-color layer, light scattering and refraction often occur, resulting in color mixing.
- the black matrix To reduce color vividness and purity, effectively separating the three color layers is the main purpose of the black matrix.
- the sources of black matrices used in color filters in TFT-LCD panels are as follows: (1) metallic chromium (Cr) black matrix; (2) resin black matrix; and (3) electroless nickel plating. (Ni) black matrix.
- a black matrix layer having an opening may be formed on, for example, the exposed front surface of the flexible display substrate.
- Exemplary black matrix materials that can be used in LEDs include carbon, metal films (eg, nickel, aluminum, molybdenum, and alloys), metal oxide films (eg, chromium oxide), metal nitride films (eg, chromium nitride). , an organic resin, a glass paste, and a resin or paste including black pigment or silver particles.
- Black matrix The layer prevents the LED from penetrating between the LEDs or being absorbed by adjacent LEDs. Therefore, the presence of the black matrix layer improves the contrast of the image displayed on the flexible display panel.
- the black matrix layer can be formed using, for example, inkjet printing, sputtering and etching, spin coating, lamination or printing methods.
- the inventors of the present invention suddenly realized that if a graphene material is used to fabricate a black matrix of a micro LED device, the black matrix can be simultaneously utilized, and the micro LED device can also be used.
- the heat generated by the wafer or the like of the lower substrate is effectively derived, that is, in the invention referred to herein, the high-thickness high-shielding coefficient film formed using graphene simultaneously functions as a black matrix and heat dissipation.
- graphene can be patterned by a process technique such as inkjet or screen printing, a black matrix can be easily formed.
- this paper is to provide a graphene heat-dissipating film which can be used in the upper substrate of a micro LED device, which has the function of dissipating the heat of the LED and the black matrix structure which must be used as a micro LED display to enhance the optical contrast.
- a film has both the functions of heat dissipation and color separation.
- the purpose of this paper is also to provide an upper substrate for a micro LED device, especially as an upper substrate for a flexible micro LED device, which has an R (red)/G (green)/B (blue) LED pixel.
- the black matrix in the upper substrate is formed of graphene. When the black matrix has different coating thicknesses, it has a low light transmittance under visible light and has a heat dissipation function in the X, Y, and Z directions.
- the integrated upper substrate will be delivered to the downstream customers who produce the micro LED device.
- the customer can directly attach the integrated upper substrate to the lower substrate of the micro LED device, and obtain the semi-finished product after the alignment, that is, the micro LED device. It can also be called Open Cell.
- An upper substrate for a micro LED device comprising:
- a transparent adhesive layer covering the metal layer and the graphene layer on the base substrate is formed.
- the graphene layer has an opening capable of exposing a light-transmitting region of the lower substrate for the micro LED to serve as a black matrix of the micro LED device.
- the thickness of the metal layer at a position on the bottom substrate corresponding to the wafer of the lower substrate for the micro LED device is thickened or widened.
- the graphene layer has a thickness of 5 ⁇ m or more, preferably 50 ⁇ m or less, preferably 40 ⁇ m or less, and preferably 30 ⁇ m or less.
- a miniature LED device comprising:
- the upper substrate according to any one of items 1 to 5, and
- the micro LED device uses a lower substrate.
- a display device comprising:
- a method of preparing an upper substrate for a micro LED device comprising the steps of:
- a transparent adhesive layer is formed on the base substrate on which the metal layer and the graphene layer are formed.
- the metal layer at a position on the bottom substrate corresponding to the wafer of the lower substrate for the micro LED device The metal is thickened or widened.
- the interlayer layer is formed on the graphene layer such that the interlayer layer is in contact with the LED and the region other than the wire of the lower substrate for the micro LED when it is bonded to the lower substrate for the micro LED device.
- the micro LED device provided in the present invention uses the graphene film in the upper substrate to simultaneously have the dual functions of heat dissipation and color separation.
- the film combines the function of dissipating LED heat collection and the black matrix structure that must be used as a micro LED display to enhance optical contrast.
- This paper first proposes an "integrated upper substrate" exclusively for use in miniature LED displays, especially flexible miniature LEDs, which are in the form of integrated diaphragms.
- the integrated upper substrate will be delivered to the downstream customers who produce the micro LED device. The customer can directly attach it to the lower substrate of the micro LED array, and obtain the semi-finished display, ie Open Cell, after the alignment is completed.
- a component processor for driving hundreds of millions of micro LED chips can design a heat storage metal layer having a high film thickness at a specific position, thereby further effectively guiding Thermal energy.
- the inter-layer layer is added in the upper substrate, it is possible to prevent the upper substrate from being impacted on the micro-LED lower substrate array during the winding process, especially the flexible micro-LED device.
- the downward pressure of the entire display since the inter-layer layer is added in the upper substrate, it is possible to prevent the upper substrate from being impacted on the micro-LED lower substrate array during the winding process, especially the flexible micro-LED device. The downward pressure of the entire display.
- the metal pattern of the upper substrate of the present invention since the metal pattern of the upper substrate of the present invention has the cross-alignment mark before the bonding of the lower base plate, it is not necessary to re-create, and the alignment accuracy can be improved.
- Figure 1 shows a comparison of the three major displays.
- FIG. 2 shows a schematic diagram of one embodiment of a substrate on a micro LED device referred to herein.
- Fig. 3 is a schematic view showing the structure of a color filter and a black matrix.
- FIG. 4 is a schematic view showing the preparation process of the upper substrate involved herein.
- FIG. 5 is a schematic view showing a process of bonding the upper substrate and the micro LED lower substrate herein.
- FIG. 6 is a schematic flow chart showing the micro-LED device obtained by soldering the obtained micro-LED upper and lower substrates.
- Fig. 7 schematically shows a heat conduction path and a light conduction path of the micro LED device obtained herein.
- Fig. 8 is a schematic perspective view showing the main structure of the upper and lower substrates herein.
- Figure 9 shows the OD values of graphene layers of different thicknesses.
- Figure 10 shows the light transmittance of a graphene layer of a certain thickness at different visible wavelengths.
- Figure 11 is a schematic view showing the heat dissipation mode of the micro LED device obtained herein.
- Figure 12 shows the results of the bending detection test and the heat dissipation experiment of the display obtained herein.
- Micro LED devices as well as miniature LED display devices, are referred to herein.
- the term "micro” device or “micro” LED structure as used herein may refer to a descriptive dimension of certain devices or structures in accordance with embodiments herein.
- the term “micro” device or structure refers to a size from 1 ⁇ m to 100 ⁇ m.
- the above dimensions are merely exemplary and that the dimensions of the miniature LED devices or display devices referred to herein are not necessarily limited by this and may be applicable to larger or smaller scales in some specific examples.
- over span may refer to the relative position of one layer relative to the other.
- crossing another layer, “on” another layer, or “on” another layer or “bonding” to another layer may be in direct contact with other layers or There may be one or more intermediate layers.
- a layer “between” the layers may be in direct contact with the layer or may have one or more intermediate layers.
- covering refers to the fact that one layer completely covers another layer, that is, A covering B means that A completely covers B, and B must contact A with the outside.
- An upper substrate for a micro LED device comprising: a bottom substrate; a metal layer having a pattern on the bottom substrate having a non-opening region capable of covering the lower substrate for the micro LED; and a graphene layer formed on the bottom substrate; A transparent adhesive layer covering the metal layer and the graphene layer on the base substrate is formed.
- the bottom substrate may be a flexible plastic substrate or a glass substrate.
- the material of the substrate is not limited as long as it can be used as a substrate material in the LED display.
- a plastic substrate such as PET, PI, PS or PP can be used.
- the film thickness of the bottom substrate is 150 ⁇ m or less, but it is merely an exemplary description.
- the thickness of the bottom substrate is not limited, and those skilled in the art can design according to actual conditions.
- a metal layer having a pattern capable of covering a non-opening region of the lower substrate for the micro LED is formed on the base substrate.
- the metal layer is directly formed on the bottom substrate, and the metal layer mainly includes the following parts: a position for soldering, a cross-alignment mark for future alignment with the lower substrate of the micro LED device, and guiding the latter.
- a metal layer of graphene's own heat source that can conduct heat out of the device.
- the metal layer has a pattern designed according to a non-opening region of the lower substrate for the micro LED device to be aligned, and the metal layer should be capable of covering the non-opening region of the lower substrate for LED.
- a schematic depiction of the metal layer is given in Figures 2 and 4.
- the metal material forming the metal layer is not limited, and may be any metal that can be used in an LED display, and may be, for example, an inorganic high heat conductive metal such as copper, aluminum, silver, or iron, preferably copper.
- an inorganic high heat conductive metal such as copper, aluminum, silver, or iron, preferably copper.
- it is preferable that the thickness of the metal layer at a position corresponding to the wafer of the lower substrate for the micro LED device on the base substrate is thickened or widened. By this thickening or widening process, the heat generated at the lower substrate wafer can be more efficiently derived.
- FIG. 8 schematically shows the structure of the metal layer, and it can be seen that the metal layer has a given pattern which is designed according to the lower substrate for the micro LED to be bonded so that the metal layer can be covered.
- the micro LED uses a non-opening area of the lower substrate.
- the area of a metal portion of a part of the metal layer is widened or the film thickness thereof is thickened, and the portions which are widened and thickened correspond to the lower substrate for the micro LED device.
- Such a structure can quickly receive the heat from the graphene layer of the entire micro LED device processor.
- the metal layer has a film thickness of 30 ⁇ m or less.
- the thickness can be adjusted, and the upper limit is not limited, and can be adjusted according to the size of the entire upper substrate or the entire LED device and the display device.
- a graphene layer is also formed on the bottom substrate, as shown in FIGS. 2 and 4.
- the graphene layer is formed on the base substrate and has an opening capable of exposing a light-transmitting region of the lower substrate for the micro LED.
- This graphene layer will be used as a black matrix for micro LED devices.
- some of the graphene layers having open cells are formed on the base substrate across the metal layer, that is, a portion of the graphene is formed on the metal layer, and a portion is in contact with the bottom substrate.
- Some graphene-coated metal layers are formed on the base substrate; some graphenes are not formed on the bottom substrate without contact with the metal layers.
- the position of the opening of the graphene layer is also designed according to the lower substrate of the micro LED device, thereby ensuring that it can expose the light-transmitting region of the lower substrate for the micro LED, thereby making it function as a black matrix of the micro LED device.
- FIG. 8 schematically shows a schematic view of a graphene layer.
- the graphene layer has an opening capable of exposing the light-transmitting region of the lower substrate for the micro LED, and the pixels of the respective color pixels are opened to pass the light.
- the cross-alignment mark of the upper substrate may be exposed on the graphene layer, that is, the portion corresponding to the cross-alignment mark on the graphene layer is hollowed out, so that the cross-alignment mark on the upper substrate can be exposed, thereby further improving The alignment of the substrate is matched.
- the cross mark is formed on the upper substrate PET, and the word is on the plastic substrate layer of the lower substrate.
- the thickness of the graphene layer is not limited. However, in order to sufficiently function as a black matrix, the thickness of the graphene layer is required to be 1 ⁇ m or more.
- the graphene layer acts as a black matrix, so it is required to block light, and the stronger the light-shielding ability, the higher the OD value of the graphene layer is required.
- the absorbance (A) can be calculated by measuring the transmitted light and incident light intensity.
- A -log10 (transmitted light intensity / incident light intensity).
- the thickness of the graphene layer is preferably 5 ⁇ m or more, and the graphene layer can fully function as a black matrix, and the upper limit of the thickness of the graphene layer is not limited. Those skilled in the art can select and design according to the actual needs and dimensions of the micro LED device and the display. In a specific embodiment, the thickness of the graphene layer is preferably 50 ⁇ m or less, preferably 40 ⁇ m or less, and more preferably 30 ⁇ m or less.
- the film thickness of the graphene layer is 30 ⁇ m
- the data of the light transmittance at each visible light wavelength is summarized in FIG. 10, and it can be seen that the film thickness is graphene.
- Layer at each wavelength Both have a very low light transmittance, so that the function as a black matrix can be fully utilized.
- the micro LED device of the present invention uses an upper substrate, which further includes: an interlayer layer formed on the graphene layer, and the interlayer layer is bonded to the lower substrate of the micro LED device.
- the LEDs of the substrate are in contact with areas other than the wires.
- the contact refers to a physical contact, that is, an area in which the interlayer layer actually contacts the LEDs and wires of the lower substrate.
- there is such a interlayer layer that can prevent the black matrix from being pressed onto the lower substrate of the micro LED device, the processor, and the like when the flexible display is bent.
- the schematic structure of the interlayer layer is given in FIG. In addition, FIG.
- the interlayer layer 8 shows the three-dimensional structure of the interlayer layer and its mode of action.
- the flexible substrate can be effectively prevented from being in the process of curling, and the upper substrate is used for the lower substrate array of the micro LED device. Produces an impact that disperses the downward pressure of the entire display.
- the interlayer layer may be formed using a material generally used to form a photoresist resin.
- a negative photoresist also known as a photoresist
- a photoresist is a light-sensitive mixed liquid composed of a photosensitive resin, a sensitizer (see spectral sensitizing dye), and a solvent.
- the photocuring reaction can be quickly performed in the exposed region, so that the physical properties of the material, particularly solubility, affinity, and the like are significantly changed.
- the soluble fraction is dissolved by treatment with a suitable solvent to give the desired image.
- photoresists are widely used in the manufacture of printed circuits and integrated circuits, as well as in printing and plate making processes.
- Photoresist technology is complex and has many varieties. According to its chemical reaction mechanism and development principle, it can be divided into two types: negative gel and positive gel. Negative glue is formed after the formation of insoluble matter after illumination; on the contrary, it is insoluble to some solvents, and it is a positive glue after being irradiated to become a soluble substance. With this property, by coating the photoresist, the desired circuit pattern can be etched on the surface of the silicon wafer. Photoresists can be classified into three types based on the chemical structure of the photosensitive resin.
- Photopolymerization type using an ethylenic monomer, generates a radical under the action of light, and the radical further initiates polymerization of the monomer, and finally forms a polymer, which has the characteristics of forming a positive image.
- Photodegradable type using a material containing an azide quinone compound, after photoilishing, photodecomposition reaction occurs, and oil-soluble to water-soluble, can be made into a positive gel.
- 3 photocrosslinking type using polyvinyl alcohol laurate as a photosensitive material, under the action of light, the double bonds in the molecule are opened, and the chain-chain crosslinks to form an insoluble network.
- the structure acts as a resist, which is a typical negative photoresist.
- the photoresist resin for forming the interlayer layer may be a positive photoresist resin or a negative photoresist resin.
- the film thickness of the interlayer layer is not limited, and may be designed according to the specific size of the upper substrate and the lower substrate of the entire micro LED device. In a specific embodiment given herein, the film thickness of the interlayer layer Less than 40 ⁇ m.
- the upper substrate for the micro LED device further includes a transparent adhesive layer formed on the base substrate covering the metal layer and the graphene layer.
- the transparent adhesive layer may be an OCA optical adhesive (Optical Clear Adhesive).
- OCA optical glue used herein is a special adhesive for bonding transparent optical elements such as lenses.
- OCA optical adhesive is required to be colorless and transparent, light transmittance is above 90%, bond strength is good, it can be cured at room temperature or medium temperature, and has a small curing shrinkage.
- OCA is considered to be a double-sided tape having optical transparency.
- OCA optical glue is one of the raw materials for important touch screens. The optical acrylic adhesive is made into a non-substrate, and then the upper and lower layers are bonded to each other to form a release film, which is a double-sided adhesive tape without a base material. OCA optical glue is suitable as a binder for touch screens.
- OCA optical adhesive has the advantages of clear, high light transmission (all-light transmittance >99%), high adhesion, high weather resistance, water resistance, high temperature resistance, UV resistance, adjustable thickness and uniformity.
- the spacing, long-term use does not cause yellowing (yellowing), peeling and deterioration.
- OCA optical glue is divided into two categories, one is resistive, the other is capacitive, and the resistive optical adhesive can be divided into 50 ⁇ m and 25 ⁇ m optical adhesives according to different thicknesses.
- Capacitive optical adhesive is divided into 100 ⁇ m. , 175 ⁇ m, 200 ⁇ m optical glue.
- Optical adhesives can be used in different fields according to their thickness. Their main applications are: electronic paper, transparent device bonding, projection screen assembly, aerospace or military optics assembly, display assembly, lens assembly, resistive touch screen G+F+ F, F+F, capacitive touch screen, panel, ICON and glass and polycarbonate plastic materials, special adhesive for bonding transparent optical components (such as lenses). Silicone rubber, acrylic resin and unsaturated polyester, polyurethane, epoxy resin and other adhesives can bond optical components. Some treatment agents are usually added during formulation to improve their optical properties or to reduce cure shrinkage. Suitable for fixing various films and screens (acrylic, glass screen, touch screen, etc.) around the display of mobile devices.
- OCA optical glue to reduce glare, reduce LCD light loss, increase LCD brightness and increase light transmission, reduce energy consumption; and increase contrast, especially under strong light; Strength; avoid the generation of Newton's rings; make the surface of the product smoother; make the product borderless, expand the visible area, etc.
- the transparent adhesive layer is formed on the base substrate, which completely covers the metal layer, the graphene layer, and the optional interlayer layer. Further, usually, the transparent adhesive layer is provided with a protective film, and the protective film can be peeled off before being used for bonding with the lower substrate.
- the film thickness of the OCA adhesive layer is below 40 ⁇ m, but the thickness is merely exemplary, and the thickness of the layer is not What is the limit.
- FIG. 2 is a schematic view showing the structure of the upper substrate for the micro LED device referred to herein.
- Fig. 4 shows a method of manufacturing the upper substrate, and a method of manufacturing the upper substrate will be described in further detail below.
- a micro LED device also commonly referred to as an Open Cell, comprising: an upper substrate for a micro LED device herein, and a lower substrate for a micro LED device.
- the upper substrate for the micro LED device and the lower substrate for the micro LED device are bonded together through the transparent adhesive layer of the upper substrate.
- the micro LED device can include a switching transistor, a driving transistor, a data line, a bottom electrode, a ground connection line, a patterned bank layer, a contact pad for driving the chip FPC, and a micro LED device for emitting red light.
- a micro LED device that emits green light and a micro LED device that emits blue light are shown in FIG.
- Fig. 5 shows an example of a manufacturing method of manufacturing the micro LED device herein, and a manufacturing method thereof will hereinafter be described in detail.
- the miniature LED display device herein includes: a miniature LED device herein.
- the miniature LED display device herein further includes a heat sink metal sheet.
- a heat sink metal sheet any material capable of dissipating heat, such as an inorganic high thermal conductive metal such as copper, aluminum, silver or iron, preferably copper is used.
- the heat-dissipating metal sheet When used in a large-sized display such as a television, it is often necessary to add the heat-dissipating metal sheet to further assist heat dissipation. When used for a small-sized display such as a mobile phone or a tablet computer, the heat-dissipating metal sheet can be omitted.
- Figure 7 shows a schematic of the micro LED display device herein.
- the present invention also relates to a method of fabricating an upper substrate for a micro LED device, comprising the steps of: forming a metal layer having a pattern of a non-opening region capable of covering a lower substrate for a micro LED on a base substrate; forming the metal layer a graphene layer is formed on the bottom substrate; and a transparent adhesive layer is formed on the bottom substrate on which the metal layer and the graphene layer are formed.
- the method for fabricating the upper substrate of the micro LED device herein further comprises: adding the metal of the metal layer at a position corresponding to the wafer of the lower substrate of the micro LED device on the bottom substrate. Thick or widened.
- the corresponding position means that the metal layer at the corresponding position does not actually contact the wafer of the lower substrate at a position corresponding to the wafer of the lower substrate of the micro LED device.
- the method for fabricating the upper substrate of the micro LED device herein further comprises: forming a interlayer layer on the graphene layer such that the interlayer layer is bonded to the lower substrate of the micro LED device. It is in contact with the LED and the region other than the wire of the lower substrate for the micro LED.
- FIG. 4 shows an exemplary diagram of a method of preparing the upper substrate referred to herein.
- the bottom substrate is first prepared, and the bottom substrate is preferably a flexible plastic substrate or a glass substrate.
- the material of the substrate there is no limitation on the material of the substrate, as long as it can be used in the LED display, for example, PET may be used.
- Plastic substrate made of PI material.
- the bottom substrate needs to be further cleaned for the subsequent printing step.
- the thickness of the bottom substrate used is 150 ⁇ m or less, as shown in FIG.
- the thickness is merely exemplary, and in the upper substrate referred to herein, the thickness is not specifically limited, and may be appropriately designed depending on the structure of the micro LED device to be prepared.
- a wire screen printing step is performed on the cleaned bottom substrate to form a thermally conductive metal layer and an alignment layer at predetermined locations on the base substrate.
- a location for soldering by a metal sheet, a cross-alignment mark, and a metal layer for guiding a subsequently formed heat source of the graphene layer on the bottom substrate the metal layer can be used to derive heat generated in the use of the display to the periphery of the display.
- copper is used to form a position for soldering by the metal piece and a cross-alignment mark.
- the formed metal soldering position, the metal cross, and the thermal conductive region have a film thickness of 20 ⁇ m or less, as shown in FIG. 2 .
- the thickness is merely exemplary, and in the upper substrate referred to herein, the thickness is not specifically limited, and may be appropriately designed depending on the structure of the micro LED device to be prepared.
- the metal material used in the second step is not particularly limited and may be any metal that can be used in an LED display, and may be, for example, copper, aluminum, or the like, preferably copper.
- Screen printing forms a first layer on the bottom substrate and leaves a portion for forming a graphene black matrix having a light blocking and heat dissipating function at a position set as needed.
- a second screen printing can also be performed. In the second printing, some wires formed on the bottom substrate are thickened, so that it can be targeted to the micro
- the heat source of the component processor of the LED device focuses on heat dissipation.
- the thickened metal layer may have a film thickness of 30 ⁇ m or less, as shown in FIG. 2 .
- the thickening operation is performed because, when some manufacturers use microchips for the production of micro LED devices to implement multi-LED control, it is necessary to thicken the metal wires of some important positions of the upper substrate to achieve sufficient Cooling.
- the upper substrate of this paper it can be designed according to the requirements of the manufacturer of the downstream micro LED device to be targeted, so that the metal wire can be thickened for some specific positions in the second step.
- the thickness of the thickened wire There is no specific limit, and the film thickness of the metal layer can be designed according to the need to dissipate heat.
- a graphene black matrix having a light shielding and heat dissipation function is formed at a corresponding position by screen printing.
- the graphene layer in the upper substrate involved herein has two functions at the same time, that is, the graphene layer serves as a black matrix for separating red, green, and blue color regions, and the graphene layer has excellent thermal conductivity due to graphene. It is used as a heat dissipation layer.
- the thickness of the graphene layer formed by the screen printing method is 40 ⁇ m or less, as shown in FIG. 2, but the thickness is also exemplified, and can be designed according to a specific case.
- the thickness of the graphene layer is required to be at least 1 ⁇ m or more.
- the interlayer layer may be further formed by screen printing, and the interlayer layer may be composed of, for example, a photoresist resin.
- the formation of the interlayer layer can effectively prevent the black matrix from being pressed to the inter-structure of the micro LED when the flexible display is bent.
- the step of forming the interlayer is not necessary and can be designed according to the case of the lower substrate for docking provided by the downstream micro LED device manufacturer.
- the film thickness of the interlayer layer is below 40 ⁇ m, as shown in FIG. 2, and the film thickness should be understood to be merely exemplary.
- the step of rolling the OCA optical paste is performed on the bottom substrate on which the wire and the graphene layer are formed.
- an optical grade OCA paste is used, which can be used to adhere a micro LED array substrate for alignment, and the OCA adhesive layer has a film thickness of 40 ⁇ m or less, as shown in FIG. 2, the film Thickness should be understood to be merely exemplary.
- the material of the OCA optical adhesive is an insulating epoxy resin material
- the longitudinal heat source can be conducted to the graphene material, thereby facilitating heat dissipation.
- a protective film on the commercially available OCA optical adhesive, whereby a protective film is provided on the upper substrate of the OCA adhesive layer obtained in the fifth step.
- the "integrated upper substrate” herein has been obtained by the method shown in FIG.
- the upper substrate can be directly supplied to manufacturers of downstream micro LED devices for the production of micro LED devices.
- the lower substrate for the micro LED device As shown in FIG. 4, after the upper substrate for the micro LED device is obtained, as shown in FIG. 5, it can be aligned with the lower substrate for the micro LED device. As shown in FIG. 5, first, the lower substrate for the micro LED device needs to be taken out and the upper substrate is aligned with the upper substrate.
- the lower substrate of the micro LED device is not particularly limited, and may be various lower substrates produced by a manufacturer in the art.
- the lower substrate may include a switching transistor, a driving transistor, a data line, a bottom electrode, a ground connection line, a patterned bank layer, a contact pad for driving the chip FPC, and a micro LED device for emitting red light, and emitting
- a switching transistor for example, a switching transistor, a driving transistor, a data line, a bottom electrode, a ground connection line, a patterned bank layer, a contact pad for driving the chip FPC, and a micro LED device for emitting red light, and emitting
- a micro LED device for emitting red light
- the alignment can be assisted by different alignment marks on the upper and lower substrates.
- the bonding process is performed by a roller to obtain a semi-finished micro LED device, which may also be referred to as an Open Cell.
- the heat-dissipating metal piece may be soldered on the obtained micro-LED device as shown in FIG. 5, for example, may be a copper piece, and the heat-dissipating metal piece is bent and placed on the lower LED TFT substrate. And use the air convection method to dissipate heat, as shown in Figure 6.
- a display device can be obtained.
- the step of soldering the heat dissipating metal piece is shown in FIG. 6, those skilled in the art will appreciate that the heat dissipating metal piece is not necessary for the display device.
- the heat-dissipating metal sheet When used in a large-sized display such as a television, it is often necessary to add the heat-dissipating metal sheet to further assist heat dissipation.
- the heat-dissipating metal sheet can be omitted.
- a method of screen printing (also referred to as screen printing) is employed in forming a metal film layer or a graphene layer, but those skilled in the art can understand that film formation or
- the manner of the layer is not limited thereto, and may be exemplified by, for example, inkjet printing, sputtering and etching, spin coating, lamination or printing methods, and the like.
- the optical density OD value and the light transmittance were measured (the OD value was measured using the OCT Color Filter Color Checker LCF-Series MCPD-9800).
- FIGS. 9 and 10 respectively show the OD values of graphene layers of different thicknesses, and the light transmittance of the graphene layer at a film thickness of 30 ⁇ m. It can be seen that in the present invention, a graphene layer having a film thickness of 5 ⁇ m or more can be used as a black matrix. According to the results of Example 1, it can be shown that the graphene layer can be used as a black matrix having a sufficiently low light transmittance.
- the weight percentages of the respective components may be appropriately selected according to the following table to obtain graphene layers having different compositions.
- a micro LED display was prepared in which PET was used as the base substrate, and the OCA adhesive layer and the lower substrate were respectively used as common OCA adhesives, and the lower substrate used by common liquid crystal panel manufacturers.
- Example 2 The LED display obtained in Example 2 was monitored using an infrared camera as shown in Fig. 11, and the heat dissipation result of the display after a fixed number of bending was measured. The test results are shown in Fig. 12. It can be found that the display of the present invention has stable heat dissipation characteristics even if the bending is as high as 2000 times.
- This article provides an "integrated upper substrate" for use in a miniature LED display device.
- the substrate is in the form of an integrated diaphragm that can be directly supplied to downstream customers after production, and the customer can directly attach to the micro LED.
- a semi-finished micro LED device can be obtained after the alignment bonding process.
- the upper substrate herein has a graphene film that combines the function of dissipating LED heat collection and the black matrix structure that must be used as a micro LED display to enhance optical contrast.
- the preferred upper substrate of the present invention designs a high-thickness heat-storing metal layer at a specific location for a component processor that drives hundreds of millions of micro-LED dies to ease the thermal energy.
- the preferred upper substrate of the present invention is provided with a interlayer layer, which can prevent the micro LED device, especially the flexible LED device, from being impacted during the winding process, and the upper substrate can impact the micro LED lower substrate array, and can disperse the downward display of the entire display. pressure.
- the preferred upper substrate has a cross-alignment mark before the lower base plate of the downstream manufacturer can improve the alignment accuracy.
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Abstract
Description
物质 | 物质状态 | 导热率Wm-1K-1 |
石墨烯 | 固态 | (4840±440)~(5300±480) |
金刚石 | 固态 | 900~2320 |
银 | 固态 | 420 |
铜 | 固态 | 401 |
黄金 | 固态 | 318 |
铝 | 固态 | 237 |
白金 | 固态 | 70 |
铁 | 固态 | 80 |
材料 | 重量百分比 | 来源 |
人造石墨烯粉 | 70%~90% | 泓明石墨 |
烷基苯酸树脂 | 5%~10% | 沅鸿股份有限公司 |
NMP溶剂 | 5%~10% | 松益化工股份有限公司 |
分散剂 | 5%~10% | BYK公司 |
附着力促进剂 | 5%~10% | 佛山涂海汇化学材料有限公司 |
消泡剂 | 5%~10% | 创馨贸易 |
Claims (10)
- 一种微型LED器件用上基板,其包括:底部基板;形成在底部基板上具有能够覆盖微型LED用下基板的非开口区的图案的金属层;形成在底部基板上的石墨烯层;以及形成在底部基板上覆盖金属层和石墨烯层的透明粘合层。
- 根据权利要求1所述的微型LED器件用上基板,其中,所述石墨烯层具有能够露出微型LED用下基板的透光区域的开孔,以用作微型LED器件的黑色矩阵。
- 根据权利要求1或2所述的微型LED器件用上基板,其还包括:形成在石墨烯层上的间系层,该间系层在与微型LED器件用下基板贴合时与所述下基板的LED和导线之外的区域接触。4.根据权利要求1~3中任一项所述的微型LED器件用上基板,其中,底部基板上的与微型LED器件用下基板的晶片对应位置处的所述金属层的厚度经加厚或宽度经加宽。
- 根据权利要求1~4中任一项所述的微型LED器件用上基板,其中,所述石墨烯层的厚度在5μm以上,优选在50μm以下,优选在40μm以下,优选在30μm以下。
- 一种微型LED器件,其包括:权利要求1~5中任一项所述的上基板,以及微型LED器件用下基板。
- 一种显示装置,其包括:权利要求6所述的微型LED器件。
- 根据权利要求7所述的显示装置,其还包括散热金属片。
- 一种微型LED器件用上基板的制备方法,其包括如下工序:在底部基板上形成具有能够覆盖微型LED用下基板的非开口区的图案的金属层;在形成有所述金属层的底部基板上形成石墨烯层;以及在形成有所述金属层和石墨烯层的底部基板上形成透明粘合层。
- 根据权利要求9所述的微型LED器件用上基板的制备方法,其还包括:对底部基板上的与微型LED器件用下基板的晶片对应位置处的所述金属层的金属进行加厚或加宽处理。
- 根据权利要求9或10所述的微型LED器件用上基板的制备方法,其还包括:在石墨烯层上形成间系层,以使得该间系层在与微型LED器件用下基板贴合时与所述微型LED用下基板的LED和导线之外的区域接触。
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US16/768,813 US11545607B2 (en) | 2017-12-04 | 2017-12-04 | Upper substrate for miniature LED component, miniature LED component, and miniature LED display device |
JP2020529667A JP2021506108A (ja) | 2017-12-04 | 2017-12-04 | マイクロledデバイス用上部基板、マイクロledデバイス及びマイクロled表示装置 |
PCT/CN2017/114383 WO2019109200A1 (zh) | 2017-12-04 | 2017-12-04 | 微型led器件用上基板、微型led器件以及微型led显示装置 |
KR1020207019102A KR102349395B1 (ko) | 2017-12-04 | 2017-12-04 | 초소형 led 컴포넌트용 상부 기판, 초소형 led 컴포넌트, 및 초소형 led 디스플레이 장치 |
CN201780097022.6A CN111357121A (zh) | 2017-12-04 | 2017-12-04 | 微型led器件用上基板、微型led器件以及微型led显示装置 |
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