WO2019075746A1 - Light sensor and organic light emitting diode display screen - Google Patents

Light sensor and organic light emitting diode display screen Download PDF

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Publication number
WO2019075746A1
WO2019075746A1 PCT/CN2017/107100 CN2017107100W WO2019075746A1 WO 2019075746 A1 WO2019075746 A1 WO 2019075746A1 CN 2017107100 W CN2017107100 W CN 2017107100W WO 2019075746 A1 WO2019075746 A1 WO 2019075746A1
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WIPO (PCT)
Prior art keywords
light emitting
organic light
emitting diode
voltage
thin film
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PCT/CN2017/107100
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French (fr)
Chinese (zh)
Inventor
陈小明
赵晓辉
曹慧敏
刘鹏
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深圳市柔宇科技有限公司
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Application filed by 深圳市柔宇科技有限公司 filed Critical 深圳市柔宇科技有限公司
Priority to PCT/CN2017/107100 priority Critical patent/WO2019075746A1/en
Priority to CN201780091760.XA priority patent/CN110709994A/en
Publication of WO2019075746A1 publication Critical patent/WO2019075746A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00

Definitions

  • the present invention relates to the field of brightness detection, and in particular to a light sensor and an organic light emitting diode display.
  • OLED Organic Light-Emitting Diode
  • the brightness of the OLED changes due to degradation of the OLED material.
  • the brightness of the OLED can be compensated according to the aging characteristics of the OLED.
  • this approach relies too much on the aging properties of OLEDs. If the true ageing of the OLED is different from the expected one, the compensation effect is limited.
  • Embodiments of the present invention provide a light sensor and an organic light emitting diode display.
  • the light sensor of the embodiment of the present invention is used for an organic light emitting diode display screen, the organic light emitting diode display screen includes an organic light emitting diode layer, and the light sensor is disposed on the organic light emitting diode layer, and the light sensor comprises:
  • a gate of the first thin film transistor is connected to a first voltage input end, a source of the first thin film transistor is connected to a first predetermined voltage, and a drain of the first thin film transistor is connected to a first node;
  • a gate of the second thin film transistor is connected to a second voltage input terminal, a source of the second thin film transistor is connected to the first node, and a drain of the second thin film transistor is connected to a second predetermined Voltage;
  • the organic light emitting diode layer includes a plurality of organic light emitting diodes for detecting a brightness of one of the organic light emitting diodes corresponding to the light sensor according to a voltage change of the first node.
  • organic light emitting diode layer comprising a plurality of organic light emitting diodes
  • a plurality of the photosensors are disposed on the organic light emitting diode layer, and the plurality of photosensors correspond to the plurality of the organic light emitting diodes, and each of the photosensors is used. And detecting brightness of one of the organic light emitting diodes corresponding to the light sensor according to a voltage change of the first node.
  • the light sensor is disposed on the organic light emitting diode layer, and detects the brightness of the organic light emitting diode according to the voltage change of the first node, so that the detection result is accurate, and thus the detection may be performed according to the detection. As a result, the brightness of the organic light emitting diode is compensated.
  • FIG. 1 is a schematic diagram showing the circuit structure of a photosensor according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of an organic light emitting diode display screen according to an embodiment of the present invention
  • Figure 3 is a graph of threshold voltage variation of a thin film transistor over time at different illumination intensities
  • FIG. 4 is a graph showing a threshold voltage of a thin film transistor as a function of time under illumination of different wavelengths
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” or “second” may include one or more of the described features either explicitly or implicitly.
  • the meaning of "a plurality" is two or more unless specifically defined otherwise.
  • installation In the description of the embodiments of the present invention, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed connections, for example, or They are detachable or integrally connected; they can be mechanically connected, they can be electrically connected or can communicate with each other; they can be connected directly or indirectly through an intermediate medium, which can be internal or two components of two components. Interaction relationship.
  • an intermediate medium which can be internal or two components of two components.
  • the "on" or “below” of the second feature may include direct contact of the first and second features, and may also include the first sum, unless otherwise specifically defined and defined.
  • the second feature is not in direct contact but through additional features between them.
  • the first feature “above”, “above” and “above” the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature.
  • the first feature “below”, “below” and “below” the second feature includes the first feature directly below and below the second feature, or merely the first feature level being less than the second feature.
  • a photosensor 10 is used in an organic light emitting diode display panel 100.
  • the organic light emitting diode display panel 100 includes an organic light emitting diode layer 20.
  • the photosensor 10 is disposed on the organic light emitting diode layer 20.
  • the photosensor 10 includes a first thin film transistor T P and a second thin film transistor T R .
  • the gate of the first thin film transistor T P is connected to the first voltage input terminal V GP
  • the source of the first thin film transistor T P is connected to the first predetermined voltage V COM
  • the drain of the first thin film transistor T P is connected to the first node N.
  • the gate of the second thin film transistor T R is connected to the second voltage input terminal V GR , the source of the second thin film transistor T R is connected to the first node N, and the drain of the second thin film transistor T R is connected to the second predetermined voltage V D .
  • the organic light emitting diode layer 20 includes a plurality of organic light emitting diodes 22 for detecting the brightness of one organic light emitting diode 22 corresponding to the light sensor 10 according to the voltage change of the first node N.
  • the brightness of the organic light emitting diode changes due to the deterioration of the organic light emitting diode material during use of the organic light emitting diode display.
  • the brightness of the organic light emitting diode can be compensated according to the aging characteristics of the organic light emitting diode.
  • this approach relies too much on the aging characteristics of organic light-emitting diodes. If the true ageing of the organic light-emitting diode is different from the expected one, the compensation effect is limited. If the brightness of the organic light emitting diode is detected by the principle of the photosensor using the photosensor, the detection result is often inaccurate. Specifically, referring to FIG. 3 and FIG.
  • the threshold voltage Vth of the thin film transistor will drift. Phenomenon, and the wavelength, intensity, and bias time of the illumination all affect the drift of the threshold voltage Vth . If the brightness of the organic light emitting diode is detected by the light sensor using the principle of photogenerated carriers, it is easy to be affected by the unevenness of V th in the organic light emitting diode display, the deterioration of the thin film transistor, and the noise, thereby resulting in stability of the detection result. affected.
  • the photosensor 10 is a circuit having a photosensitive function based on a thin film transistor.
  • the photosensor 10 is disposed on the organic light emitting diode layer 20 and is disposed according to the first thin film transistor T P and the second thin film transistor T R .
  • the voltage change of the first node N detects the brightness of the organic light emitting diode 22, which reduces the influence of factors such as the unevenness of Vth in the organic light emitting diode display panel 100, the deterioration of the thin film transistor, and noise on the detection result.
  • the detection result is accurate, so that the brightness of the organic light emitting diode 22 can be compensated according to the detection result.
  • the OLED display 100 of the embodiment of the present invention includes an organic light emitting diode layer 20 and a plurality of photosensors 10 .
  • the organic light emitting diode layer 20 includes a plurality of organic light emitting diodes 22.
  • a plurality of photosensors 10 are disposed on the organic light emitting diode layer 20.
  • the plurality of photosensors 10 correspond to the plurality of organic light emitting diodes 22, and each of the photosensors 10 is configured to detect the brightness of one of the organic light emitting diodes 22 corresponding to the photosensors 10 according to the voltage change of the first node N.
  • the detection result is accurate, and thus each organic can be detected according to the detection result.
  • the brightness of the LED 22 is compensated and corrected.
  • the photosensor 10 may be disposed on the organic light emitting diode layer 20, or the photosensor 10 may be integrated in the organic light emitting diode layer 20.
  • the OLED display 100 includes an OLED layer 20 , a package glass 30 , and a polarizer 40 . Cover plate 50.
  • the photosensor 10 may be integrated on the surface of the organic light emitting diode layer 20 close to the package glass 30, or the photosensor 10 may be integrated on the surface of the organic light emitting diode 22 away from the package glass 30.
  • the photosensor 10 can be integrated on the surface of the organic light emitting diode layer 20 close to the package glass 30.
  • the photosensor 10 is disposed in the light emitting direction of the organic light emitting diode 22, which facilitates the photosensor 10 to detect the brightness of the organic light emitting diode 22.
  • photosensor 10 is integrated within organic light emitting diode layer 20. So, on the one hand, The light sensor 10 facilitates detecting the brightness of the organic light emitting diode 22 in the organic light emitting diode layer 20; on the other hand, when the light sensor 10 is applied to the organic light emitting diode display 100, the thickness of the organic light emitting diode display 100 as a whole is thin.
  • the first thin film transistor T P is exposed to the illumination of the organic light emitting diode 22, the second thin film transistor T R avoids the illumination of the organic light emitting diode 22; or the second thin film transistor T R is exposed to the organic light emitting diode light 22, a first thin film transistor T P avoid illumination of the organic light emitting diode 22.
  • the first thin film transistor T P and the second thin film transistor T R are exposed to the illumination of the organic light emitting diode 22, and the other avoids the illumination of the organic light emitting diode 22 (ie, is not exposed to the organic light emitting diode 22).
  • the threshold voltage V th of the thin film transistor is different in the case of applying light and not applying light (specifically, the threshold voltage V th of the thin film transistor is reduced in the case where light is applied; the stronger the light intensity , the threshold voltage V th of the thin film transistor is reduced faster), thus, the first thin film transistor and the second thin film transistor T P T R can be contrasted.
  • first thin film transistor and a second thin film transistor T P T R of the threshold voltage V th offset will result in different resistance change amount of the first thin film transistor and a second thin film transistor T P T R, the first thin film transistor is located
  • the voltage of the first node N between the T P and the second thin film transistor T R will change.
  • the illumination intensity of the organic light emitting diode 22 that is, the brightness of the organic light emitting diode 22 can be detected. .
  • the first thin film transistor T P is adjacent to the second thin film transistor T R .
  • the method of avoiding the illumination of the organic light emitting diode 22 by the first thin film transistor T P or the second thin film transistor T R includes, but is not limited to, providing an opaque film between the thin film transistor and the organic light emitting diode 22 that require light shielding.
  • the opaque film may be in the form of a block, and a plurality of block-shaped opaque films are respectively disposed between each of the thin film transistors and the organic light emitting diodes 22 that need to be shielded from light.
  • the opaque film may also be a one-layer structure and burrow at a position corresponding to the thin film transistor of the opaque film that does not require light shielding, so that the thin film transistor that does not require light shielding is exposed to the light of the organic light emitting diode 22. in.
  • the photosensor 10 is applied with a first negative bias NBIS and a second negative input voltage V GR applied to the first voltage input terminal V GP for a predetermined period of time.
  • the brightness of the organic light emitting diode 22 is detected according to the voltage change of the first node N.
  • the gate of the first thin film transistor T P is applied with the first negative bias NBIS
  • the gate of the second thin film transistor T R is applied with the second negative bias NBS.
  • the threshold voltage Vth of the thin film transistor will decrease.
  • the threshold voltage V th of the thin film transistor is accelerated, so that the resistance variations of the first thin film transistor T P and the second thin film transistor T R are different, the first node N The voltage will change, and the brightness of the organic light emitting diode 22 can be detected according to the voltage change of the first node N.
  • the threshold voltage Vth of the thin film transistor is decreased faster, for a predetermined period of time (for example, 1000 seconds). After that, the offset of V th can reach 15V or more. This offset can mask the influence of V th non-uniformity in the organic light emitting diode display panel 100, deterioration of the thin film transistor, and noise on the V th , and improve the detection. The accuracy of the results.
  • the first negative bias NBIS is equal to the second negative bias NBS.
  • the first thin film transistor T P and the second thin film transistor T R are applied with the same negative bias voltage, and the voltage change of the first node N is only affected by the light intensity, which facilitates the change of the voltage of the first sensor N by the photosensor 10 .
  • the brightness of the organic light emitting diode 22 is detected.
  • the photosensor 10 when the first thin film transistor T P is exposed to the illumination of the organic light emitting diode 22 and the second thin film transistor T R avoids the illumination of the organic light emitting diode 22, the photosensor 10 is according to the first node N.
  • the voltage change detecting luminance of the organic light emitting diode 22 a first positive bias is applied to the input terminal voltage V GP so that the voltage of the first node N is returned to a first negative bias is applied to a first voltage input terminal NBIS V GP and to The second voltage input terminal V GR is applied before the second negative bias voltage NBS.
  • the first thin film transistor T P when the gate of the first thin film transistor T P is applied with a positive bias, the first thin film transistor T P is the threshold voltage V th of the occurrence of a positive offset, and since the first thin film transistor T P is exposed to the organic light emitting In the illumination of the diode 22, the illumination will offset the increase rate of V th to some extent, but finally the voltage of the first node N can be restored to the first voltage input terminal V GP to apply the first negative bias NBIS and the second voltage input.
  • the terminal V GR is applied with a second negative bias before the NBS.
  • the light sensor 10 is according to the first node N.
  • a positive bias is applied to the second voltage input terminal V GR to restore the voltage of the first node N to apply a first negative bias NBIS and a pair to the first voltage input terminal V GP .
  • the second voltage input terminal V GR is applied before the second negative bias voltage NBS.
  • the threshold voltage V th of the second thin film transistor T R will be forwardly shifted, and the second thin film transistor TR is exposed to the organic light emitting diode.
  • the illumination will offset the increase rate of V th to some extent, but finally the voltage of the first node N can be restored to the first voltage input terminal V GP to apply the first negative bias NBIS and the second voltage input terminal V GR is applied before the second negative bias NBS.
  • the first voltage input terminal V GP is applied with the first positive bias voltage PBIS and the second voltage input terminal V GR is applied with the second positive bias voltage PBS for a predetermined length of time, according to the first node.
  • the voltage change of N detects the brightness of the organic light emitting diode 22.
  • the gate of the first thin film transistor T P is applied with the first positive bias voltage PBIS
  • the gate of the second thin film transistor T R is applied with the second positive bias voltage PBS.
  • the threshold voltage Vth of the thin film transistor will increase.
  • the illumination will offset the increase rate of V th to some extent, so that the resistance variations of the first thin film transistor T P and the second thin film transistor T R are different, the first node N The voltage will change, and the brightness of the organic light emitting diode 22 can be detected according to the voltage change of the first node N.
  • the offset of V th can reach 15 V or more, and this offset can mask the unevenness of V th in the organic light emitting diode display panel 100, and the thin film transistor The degradation and the influence of noise and other factors on V th improve the accuracy of the detection results.
  • the first positive bias voltage PBIS is equal to the second positive bias voltage PBS.
  • the first thin film transistor T P and the second thin film transistor T R are applied with the same positive bias voltage, and the voltage change of the first node N is only affected by the light intensity, which facilitates the change of the voltage of the photosensor 10 according to the first node N.
  • the brightness of the organic light emitting diode 22 is detected.
  • the photosensor 10 when the first thin film transistor T P is exposed to the illumination of the organic light emitting diode 22 and the second thin film transistor T R avoids the illumination of the organic light emitting diode 22, the photosensor 10 is according to the first node N. the voltage change detecting luminance of the organic light emitting diode 22, a first negative bias is applied to the input terminal voltage V GP so that the voltage of the first node N is restored to a first positive bias voltage PBIS is applied to a first input terminal of the V GP and The second voltage input terminal V GR is applied before the second positive bias PBS.
  • the threshold voltage V th of the first thin film transistor T P will be negatively shifted, and the first thin film transistor T P is exposed to the organic light emission.
  • the first thin film transistor T P is the threshold voltage V th decreases faster, the voltage of the first node N is able to recover more quickly to a first input voltage V GP and applying a first positive bias PBIS
  • the second voltage input terminal V GR is applied with a second positive bias PBS front.
  • the light sensor 10 is according to the first node N.
  • a negative bias is applied to the second voltage input terminal V GR to restore the voltage of the first node N to apply a first positive bias voltage PBIS and a pair to the first voltage input terminal V GP .
  • the second voltage input terminal V GR is applied before the second positive bias PBS.
  • the threshold voltage V th of the second thin film transistor T R will be negatively shifted, and the second thin film transistor T R is exposed to the organic light emission.
  • the threshold voltage Vth of the second thin film transistor T R decreases faster, and the voltage of the first node N can be quickly restored to the first voltage input terminal V GP to apply the first positive bias voltage PBIS and
  • the second voltage input terminal V GR is applied with a second positive bias PBS front.
  • the operation of the photosensor 10 of the embodiment of the present invention will be specifically described below by taking the first thin film transistor T P exposed to the illumination of the organic light emitting diode 22 and the second thin film transistor T R avoiding the illumination of the organic light emitting diode 22 as an example.
  • a first negative bias NBIS is applied to the gate of the first thin film transistor TP, and a second negative bias NBS is applied to the gate of the second thin film transistor TR.
  • the size of the first negative bias NBIS may be the same as the size of the second negative bias NBS.
  • the threshold voltage V th of the first thin film transistor T P negative offset amount larger than a negative second th thin film transistor T R V to the threshold voltage shift, therefore, the first thin film transistor T P The amount of resistance reduction will be greater.
  • the first predetermined voltage V COM may be 0V, that is, the source of the first thin film transistor T P is grounded.
  • the second predetermined voltage may be V D .
  • the first thin film transistor T P and the second thin film transistor T R constitute a voltage dividing circuit. Since the first thin film transistor T P is greater than the resistance of the resistor is reduced to reduce the amount of the second thin film transistor T R, and therefore, the first between the first thin film transistor and the second thin film transistor T P T R point N The voltage will decrease and the intensity of the illumination can be determined based on the amount of voltage reduction of the first node N.
  • the voltage V n of the first node N is caused by V D /2 due to the shift of the threshold voltage V th
  • the luminance of the organic light emitting diode 22 can be calculated from the voltage change of the first node N by 3V D /10 .
  • a positive bias is applied to the gate of the first thin film transistor T P such that the threshold voltage V th of the first thin film transistor T P is forwardly shifted until the voltage V n of the first node N is from V D /5 It becomes V D /2, that is, the threshold voltage V th of the first thin film transistor T P returns to the initial state.
  • the conversion time required for the voltage V n of the first node N to be changed from V D /2 to 0 V is detected, and the shorter the conversion time, the stronger the illumination intensity. Therefore, the brightness of the organic light emitting diode 22 can be calculated from the conversion time.
  • a positive bias is applied to the gate of the first thin film transistor T P such that the threshold voltage V th of the first thin film transistor T P is forwardly shifted until the voltage V n of the first node N changes from 0 V to V. D / 2, i.e., a first thin film transistor T P is the threshold voltage V th restore the initial state.
  • the OLED display 100 controls the magnitude of the voltage applied to the OLED 22 in accordance with the brightness of the OLED 22.
  • the voltage applied across the organic light emitting diode 22 is increased, and the lower the brightness of the organic light emitting diode 22, the higher the voltage applied across the organic light emitting diode 22 Large, so that the brightness of the organic light emitting diode 22 returns to normal, thereby avoiding chromatic aberration of the organic light emitting diode display panel 100.
  • the OLED display 100 controls the amount of current applied to the OLED 22 in accordance with the brightness of the OLED 22.
  • the current applied to the organic light emitting diode 22 is increased, and the lower the luminance of the organic light emitting diode 22, the larger the current applied to the organic light emitting diode 22 is.
  • the brightness of the organic light emitting diode 22 is returned to normal, thereby preventing the OLED display 100 from generating chromatic aberration.
  • a "computer-readable medium” can be any apparatus that can contain, store, communicate, propagate, or transport a program for use in an instruction execution system, apparatus, or device, or in conjunction with the instruction execution system, apparatus, or device.
  • computer readable media include the following: electrical connections (control methods) having one or more wires, portable computer disk cartridges (magnetic devices), random access memory (RAM), Read only memory (ROM), erasable editable read only memory (EPROM or flash memory), fiber optic devices, and portable compact disk read only memory (CDROM).
  • the computer readable medium may even be a paper or other suitable medium on which the program can be printed, as it may be optically scanned, for example by paper or other medium, followed by editing, interpretation or, if appropriate, other suitable The method is processed to obtain the program electronically and then stored in computer memory.
  • portions of the embodiments of the invention may be implemented in hardware, software, firmware or a combination thereof.
  • multiple steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system.
  • a suitable instruction execution system For example, if implemented in hardware, as in another embodiment, it can be implemented by any one of the following techniques known in the art or a combination thereof: having a data for A discrete logic circuit that implements a logic function logic gate circuit, an application specific integrated circuit with a suitable combination logic gate circuit, a programmable gate array (PGA), a field programmable gate array (FPGA), and the like.
  • each functional unit in each embodiment of the present invention may be integrated into one processing module, or each unit may exist physically separately, or two or more units may be integrated into one module.
  • the above integrated modules can be implemented in the form of hardware or in the form of software functional modules.
  • the integrated modules, if implemented in the form of software functional modules and sold or used as stand-alone products, may also be stored in a computer readable storage medium.
  • the above mentioned storage medium may be a read only memory, a magnetic disk or an optical disk or the like.

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Abstract

Disclosed in the present invention is a light sensor (10). The light sensor (10) is used for an organic light emitting diode display screen (100). The organic light emitting diode display screen (100) comprises an organic light emitting diode layer (20). The light sensor (10) is provided on the organic light emitting diode layer (20). The light sensor (10) comprises a first thin film transistor (TP) and a second thin film transistor (TR). A drain of the first thin film transistor (TP) is connected to a first node (N). A source of the second thin film transistor (TR) is connected to the first node (N). The organic light emitting diode layer (20) comprises a plurality of organic light emitting diodes (22). The light sensor (10) is used for detecting, according to the voltage change of the first node (N), the brightness of an organic light emitting diode (22) corresponding to the light sensor (10). In addition, further disclosed in the present invention is an organic light emitting diode display screen (100).

Description

光传感器和有机发光二极管显示屏Light sensor and organic light emitting diode display 技术领域Technical field
本发明涉及亮度检测领域，特别涉及一种光传感器和有机发光二极管显示屏。The present invention relates to the field of brightness detection, and in particular to a light sensor and an organic light emitting diode display.
背景技术Background technique
有机发光二极管(Organic Light-Emitting Diode，OLED)显示屏在使用过程中，由于OLED材料的劣化，OLED的亮度会发生变化。为了使其亮度恢复正常，可以根据OLED的老化特性对OLED的亮度进行补偿。然而，这种方式过于依赖OLED的老化特性。若OLED的真实老化程度与预料不同，则补偿效果有限。During the use of an Organic Light-Emitting Diode (OLED) display, the brightness of the OLED changes due to degradation of the OLED material. In order to restore its brightness to normal, the brightness of the OLED can be compensated according to the aging characteristics of the OLED. However, this approach relies too much on the aging properties of OLEDs. If the true ageing of the OLED is different from the expected one, the compensation effect is limited.
发明内容Summary of the invention
本发明实施方式提供一种光传感器和有机发光二极管显示屏。Embodiments of the present invention provide a light sensor and an organic light emitting diode display.
本发明实施方式的光传感器，用于有机发光二极管显示屏，所述有机发光二极管显示屏包括有机发光二极管层，所述光传感器设置在所述有机发光二极管层上，所述光传感器包括：The light sensor of the embodiment of the present invention is used for an organic light emitting diode display screen, the organic light emitting diode display screen includes an organic light emitting diode layer, and the light sensor is disposed on the organic light emitting diode layer, and the light sensor comprises:
第一薄膜晶体管，所述第一薄膜晶体管的栅极连接第一电压输入端，所述第一薄膜晶体管的源极连接第一预定电压，所述第一薄膜晶体管的漏极连接第一节点；及a first thin film transistor, a gate of the first thin film transistor is connected to a first voltage input end, a source of the first thin film transistor is connected to a first predetermined voltage, and a drain of the first thin film transistor is connected to a first node; and
第二薄膜晶体管，所述第二薄膜晶体管的栅极连接第二电压输入端，所述第二薄膜晶体管的源极连接所述第一节点，所述第二薄膜晶体管的漏极连接第二预定电压；a second thin film transistor, a gate of the second thin film transistor is connected to a second voltage input terminal, a source of the second thin film transistor is connected to the first node, and a drain of the second thin film transistor is connected to a second predetermined Voltage;
所述有机发光二极管层包括多个有机发光二极管，所述光传感器用于根据所述第一节点的电压变化检测与所述光传感器对应的一个所述有机发光二极管的亮度。The organic light emitting diode layer includes a plurality of organic light emitting diodes for detecting a brightness of one of the organic light emitting diodes corresponding to the light sensor according to a voltage change of the first node.
本发明实施方式的有机发光二极管显示屏，包括：The organic light emitting diode display screen of the embodiment of the invention includes:
有机发光二极管层，所述有机发光二极管层包括多个有机发光二极管；及An organic light emitting diode layer, the organic light emitting diode layer comprising a plurality of organic light emitting diodes;
多个上述实施方式所述的光传感器，多个所述光传感器设置在所述有机发光二极管层上，多个所述光传感器与多个所述有机发光二极管对应，每个所述光传感器用于根据所述第一节点的电压变化检测与所述光传感器对应的一个所述有机发光二极管的亮度。In the photosensor of the above-described embodiments, a plurality of the photosensors are disposed on the organic light emitting diode layer, and the plurality of photosensors correspond to the plurality of the organic light emitting diodes, and each of the photosensors is used. And detecting brightness of one of the organic light emitting diodes corresponding to the light sensor according to a voltage change of the first node.
在本发明实施方式的光传感器和有机发光二极管显示屏中，光传感器设置在有机发光二极管层上，并根据第一节点的电压变化检测有机发光二极管的亮度，使得检测结果准确，从而可以根据检测结果对有机发光二极管的亮度进行补偿。In the light sensor and the organic light emitting diode display screen of the embodiment of the present invention, the light sensor is disposed on the organic light emitting diode layer, and detects the brightness of the organic light emitting diode according to the voltage change of the first node, so that the detection result is accurate, and thus the detection may be performed according to the detection. As a result, the brightness of the organic light emitting diode is compensated.
本发明实施方式的附加方面和优点将在下面的描述中部分给出，部分将从下面的 描述中变得明显，或通过本发明的实践了解到。Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows. It is apparent from the description or by the practice of the invention.
附图说明DRAWINGS
本发明的上述和/或附加的方面和优点可以从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the appended claims
图1是本发明实施方式的光传感器的电路结构示意图；1 is a schematic diagram showing the circuit structure of a photosensor according to an embodiment of the present invention;
图2是本发明实施方式的有机发光二极管显示屏的剖视图；2 is a cross-sectional view of an organic light emitting diode display screen according to an embodiment of the present invention;
图3是在不同光照强度下薄膜晶体管的阈值电压随着时间变化的曲线图；Figure 3 is a graph of threshold voltage variation of a thin film transistor over time at different illumination intensities;
图4是在不同波长的光照下薄膜晶体管的阈值电压随着时间变化的曲线图；4 is a graph showing a threshold voltage of a thin film transistor as a function of time under illumination of different wavelengths;
主要元件及符号说明：Description of main components and symbols:
光传感器10； Light sensor 10;
第一薄膜晶体管TP、第二薄膜晶体管TR、第一电压输入端VGP、第二电压输入端VGR、第一预定电压VCOM、第二预定电压VD、第一节点N、第一节点的电压Vn、第一负偏压NBIS、第二负偏压NBS、第一正偏压PBIS、第二正偏压PBS；The first thin film transistor T P , the second thin film transistor T R , the first voltage input terminal V GP , the second voltage input terminal V GR , the first predetermined voltage V COM , the second predetermined voltage V D , the first node N, the first a node voltage Vn, a first negative bias NBIS, a second negative bias NBS, a first positive bias PBIS, a second positive bias PBS;
有机发光二极管显示屏100、有机发光二极管显示层20、有机发光二极管22、封装玻璃30、偏光片40、盖板50。The organic light emitting diode display screen 100, the organic light emitting diode display layer 20, the organic light emitting diode 22, the package glass 30, the polarizer 40, and the cover 50.
具体实施方式Detailed ways
下面详细描述本发明的实施方式，实施方式的示例在附图中示出，其中，相同或类似的标号自始至终表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。The embodiments of the present invention are described in detail below, and the examples of the embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are intended to be illustrative of the invention and are not to be construed as limiting.
在本发明的实施方式的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明的实施方式和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的实施方式的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的实施方式的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。 In the description of the embodiments of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "previous" "," "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. The orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is merely for the convenience of describing the embodiments and the simplified description of the present invention, and does not indicate or imply that the device or component referred to has a specific orientation, The orientation configuration and operation are therefore not to be construed as limiting the embodiments of the invention. Moreover, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" or "second" may include one or more of the described features either explicitly or implicitly. In the description of the embodiments of the present invention, the meaning of "a plurality" is two or more unless specifically defined otherwise.
在本发明的实施方式的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明的实施方式中的具体含义。In the description of the embodiments of the present invention, it should be noted that the terms "installation", "connected", and "connected" are to be understood broadly, and may be fixed connections, for example, or They are detachable or integrally connected; they can be mechanically connected, they can be electrically connected or can communicate with each other; they can be connected directly or indirectly through an intermediate medium, which can be internal or two components of two components. Interaction relationship. For those skilled in the art, the specific meanings of the above terms in the embodiments of the present invention can be understood on a case-by-case basis.
在本发明的实施方式中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。In the embodiments of the present invention, the "on" or "below" of the second feature may include direct contact of the first and second features, and may also include the first sum, unless otherwise specifically defined and defined. The second feature is not in direct contact but through additional features between them. Moreover, the first feature "above", "above" and "above" the second feature includes the first feature directly above and above the second feature, or merely indicating that the first feature level is higher than the second feature. The first feature "below", "below" and "below" the second feature includes the first feature directly below and below the second feature, or merely the first feature level being less than the second feature.
下文的公开提供了许多不同的实施方式或例子用来实现本发明的实施方式的不同结构。为了简化本发明的实施方式的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明的实施方式可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明的实施方式提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。The following disclosure provides many different embodiments or examples for implementing different structures of embodiments of the present invention. In order to simplify the disclosure of embodiments of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the invention. In addition, the embodiments of the present invention may repeat reference numerals and/or reference letters in different examples, which are for the purpose of simplicity and clarity, and do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. . Moreover, embodiments of the present invention provide examples of various specific processes and materials, but one of ordinary skill in the art will recognize the use of other processes and/or the use of other materials.
请参阅图1和图2，本发明实施方式的光传感器10用于有机发光二极管显示屏100。有机发光二极管显示屏100包括有机发光二极管层20。光传感器10设置在有机发光二极管层20上。光传感器10包括第一薄膜晶体管TP和第二薄膜晶体管TR。第一薄膜晶体管TP的栅极连接第一电压输入端VGP，第一薄膜晶体管TP的源极连接第一预定电压VCOM，第一薄膜晶体管TP的漏极连接第一节点N。第二薄膜晶体管TR的栅极连接第二电压输入端VGR，第二薄膜晶体管TR的源极连接第一节点N，第二薄膜晶体管TR的漏极连接第二预定电压VD。有机发光二极管层20包括多个有机发光二极管22，光传感器10用于根据第一节点N的电压变化检测与光传感器10对应的一个有机发光二极管22的亮度。Referring to FIGS. 1 and 2, a photosensor 10 according to an embodiment of the present invention is used in an organic light emitting diode display panel 100. The organic light emitting diode display panel 100 includes an organic light emitting diode layer 20. The photosensor 10 is disposed on the organic light emitting diode layer 20. The photosensor 10 includes a first thin film transistor T P and a second thin film transistor T R . The gate of the first thin film transistor T P is connected to the first voltage input terminal V GP , the source of the first thin film transistor T P is connected to the first predetermined voltage V COM , and the drain of the first thin film transistor T P is connected to the first node N. The gate of the second thin film transistor T R is connected to the second voltage input terminal V GR , the source of the second thin film transistor T R is connected to the first node N, and the drain of the second thin film transistor T R is connected to the second predetermined voltage V D . The organic light emitting diode layer 20 includes a plurality of organic light emitting diodes 22 for detecting the brightness of one organic light emitting diode 22 corresponding to the light sensor 10 according to the voltage change of the first node N.
可以理解，有机发光二极管显示屏在使用过程中，由于有机发光二极管材料的劣化，有机发光二极管的亮度会发生变化。为了使其亮度恢复正常，可以根据有机发光二极管的老化特性对有机发光二极管的亮度进行补偿。然而，这种方式过于依赖有机发光二极管的老化特性。若有机发光二极管的真实老化程度与预料不同，则补偿效果 有限。若通过光传感器利用光生载流子的原理检测有机发光二极管的亮度，检测结果往往不准确。具体地，请参阅图3和图4，在薄膜晶体管(Thin Film Transistor，TFT)的栅极施加有光照及正偏压或负偏压的情况下，薄膜晶体管的阈值电压Vth将会出现漂移现象，且光照的波长、强度、和偏压时间都会影响阈值电压Vth的漂移。若通过光传感器利用光生载流子的原理检测有机发光二极管的亮度，容易受到有机发光二极管显示屏中Vth的不均匀性、薄膜晶体管的劣化以及噪声的显著影响，从而导致检测结果的稳定性受到影响。It can be understood that the brightness of the organic light emitting diode changes due to the deterioration of the organic light emitting diode material during use of the organic light emitting diode display. In order to restore its brightness to normal, the brightness of the organic light emitting diode can be compensated according to the aging characteristics of the organic light emitting diode. However, this approach relies too much on the aging characteristics of organic light-emitting diodes. If the true ageing of the organic light-emitting diode is different from the expected one, the compensation effect is limited. If the brightness of the organic light emitting diode is detected by the principle of the photosensor using the photosensor, the detection result is often inaccurate. Specifically, referring to FIG. 3 and FIG. 4, in the case where the gate of a Thin Film Transistor (TFT) is applied with illumination and a positive or negative bias, the threshold voltage Vth of the thin film transistor will drift. Phenomenon, and the wavelength, intensity, and bias time of the illumination all affect the drift of the threshold voltage Vth . If the brightness of the organic light emitting diode is detected by the light sensor using the principle of photogenerated carriers, it is easy to be affected by the unevenness of V th in the organic light emitting diode display, the deterioration of the thin film transistor, and the noise, thereby resulting in stability of the detection result. affected.
本发明实施方式光传感器10为基于薄膜晶体管设计而成的具有感光功能的电路，光传感器10设置在有机发光二极管层20上，并根据位于第一薄膜晶体管TP与第二薄膜晶体管TR之间的第一节点N的电压变化检测有机发光二极管22的亮度，减小了由于有机发光二极管显示屏100中Vth的不均匀性、薄膜晶体管的劣化以及噪声等因素对检测结果的影响，使得检测结果准确，从而可以根据检测结果对有机发光二极管22的亮度进行补偿。In the embodiment of the present invention, the photosensor 10 is a circuit having a photosensitive function based on a thin film transistor. The photosensor 10 is disposed on the organic light emitting diode layer 20 and is disposed according to the first thin film transistor T P and the second thin film transistor T R . The voltage change of the first node N detects the brightness of the organic light emitting diode 22, which reduces the influence of factors such as the unevenness of Vth in the organic light emitting diode display panel 100, the deterioration of the thin film transistor, and noise on the detection result. The detection result is accurate, so that the brightness of the organic light emitting diode 22 can be compensated according to the detection result.
请参阅图1和图2，本发明实施方式的有机发光二极管显示屏100包括有机发光二极管层20和多个光传感器10。有机发光二极管层20包括多个有机发光二极管22。多个光传感器10设置在有机发光二极管层20上。多个光传感器10与多个有机发光二极管22对应，每个光传感器10用于根据第一节点N的电压变化检测与光传感器10对应的一个有机发光二极管22的亮度。Referring to FIG. 1 and FIG. 2 , the OLED display 100 of the embodiment of the present invention includes an organic light emitting diode layer 20 and a plurality of photosensors 10 . The organic light emitting diode layer 20 includes a plurality of organic light emitting diodes 22. A plurality of photosensors 10 are disposed on the organic light emitting diode layer 20. The plurality of photosensors 10 correspond to the plurality of organic light emitting diodes 22, and each of the photosensors 10 is configured to detect the brightness of one of the organic light emitting diodes 22 corresponding to the photosensors 10 according to the voltage change of the first node N.
如此，通过在有机发光二极管层20上设置多个光传感器10，并分别通过多个光传感器10检测对应的多个有机发光二极管22的亮度，检测结果准确，从而可以根据检测结果对每个有机发光二极管22的亮度进行补偿和校正。In this manner, by providing a plurality of photosensors 10 on the organic light emitting diode layer 20 and detecting the brightness of the corresponding plurality of organic light emitting diodes 22 through the plurality of photosensors 10, the detection result is accurate, and thus each organic can be detected according to the detection result. The brightness of the LED 22 is compensated and corrected.
需要指出的是，本发明实施方式中，光传感器10设置在有机发光二极管层20上可以为：光传感器10集成在有机发光二极管层20上，或者光传感器10集成在有机发光二极管层20内。It should be noted that, in the embodiment of the present invention, the photosensor 10 may be disposed on the organic light emitting diode layer 20, or the photosensor 10 may be integrated in the organic light emitting diode layer 20.
请参阅图1和图2，在某些实施方式中，沿有机发光二极管显示屏100的发光方向，有机发光二极管显示屏100包括依次设置的有机发光二极管层20、封装玻璃30、偏光片40及盖板50。当光传感器10集成在有机发光二极管层20上时，光传感器10可以集成在有机发光二极管层20的靠近封装玻璃30的表面，或者光传感器10集成在有机发光二极管22的远离封装玻璃30的表面。较佳地，光传感器10可以集成在有机发光二极管层20的靠近封装玻璃30的表面。如此，光传感器10设置在有机发光二极管22的发光方向上，有利于光传感器10检测有机发光二极管22的亮度。Referring to FIG. 1 and FIG. 2 , in some embodiments, along the direction of illumination of the OLED display 100 , the OLED display 100 includes an OLED layer 20 , a package glass 30 , and a polarizer 40 . Cover plate 50. When the photosensor 10 is integrated on the organic light emitting diode layer 20, the photosensor 10 may be integrated on the surface of the organic light emitting diode layer 20 close to the package glass 30, or the photosensor 10 may be integrated on the surface of the organic light emitting diode 22 away from the package glass 30. . Preferably, the photosensor 10 can be integrated on the surface of the organic light emitting diode layer 20 close to the package glass 30. As such, the photosensor 10 is disposed in the light emitting direction of the organic light emitting diode 22, which facilitates the photosensor 10 to detect the brightness of the organic light emitting diode 22.
在某些实施方式中，光传感器10集成在有机发光二极管层20内。如此，一方面， 光传感器10便于检测有机发光二极管层20中有机发光二极管22的亮度；另一方面，当光传感器10应用于有机发光二极管显示屏100时，有机发光二极管显示屏100整体的厚度较薄。In some embodiments, photosensor 10 is integrated within organic light emitting diode layer 20. So, on the one hand, The light sensor 10 facilitates detecting the brightness of the organic light emitting diode 22 in the organic light emitting diode layer 20; on the other hand, when the light sensor 10 is applied to the organic light emitting diode display 100, the thickness of the organic light emitting diode display 100 as a whole is thin.
在某些实施方式中，第一薄膜晶体管TP暴露在有机发光二极管22的光照中，第二薄膜晶体管TR避开有机发光二极管22的光照；或第二薄膜晶体管TR暴露在有机发光二极管22的光照中，第一薄膜晶体管TP避开有机发光二极管22的光照。In some embodiments, the first thin film transistor T P is exposed to the illumination of the organic light emitting diode 22, the second thin film transistor T R avoids the illumination of the organic light emitting diode 22; or the second thin film transistor T R is exposed to the organic light emitting diode light 22, a first thin film transistor T P avoid illumination of the organic light emitting diode 22.
也即是说，第一薄膜晶体管TP与第二薄膜晶体管TR中，一个暴露在有机发光二极管22的光照中，另一个避开有机发光二极管22的光照(即没有暴露在有机发光二极管22的光照中)。由于在施加光照和不施加光照的情况下，薄膜晶体管的阈值电压Vth的偏移量不同(具体为：施加有光照的情况下，薄膜晶体管的阈值电压Vth将减小；光照强度越强时，薄膜晶体管的阈值电压Vth减小的速度越快)，因此，第一薄膜晶体管TP与第二薄膜晶体管TR可以形成对照。第一薄膜晶体管TP和第二薄膜晶体管TR的阈值电压Vth的偏移量不同，将导致第一薄膜晶体管TP和第二薄膜晶体管TR的电阻变化量不同，位于第一薄膜晶体管TP与第二薄膜晶体管TR之间的第一节点N的电压将发生变化，根据第一节点N的电压变化，即可检测得到有机发光二极管22的光照强度，即有机发光二极管22的亮度。That is to say, one of the first thin film transistor T P and the second thin film transistor T R is exposed to the illumination of the organic light emitting diode 22, and the other avoids the illumination of the organic light emitting diode 22 (ie, is not exposed to the organic light emitting diode 22). In the light). Since the threshold voltage V th of the thin film transistor is different in the case of applying light and not applying light (specifically, the threshold voltage V th of the thin film transistor is reduced in the case where light is applied; the stronger the light intensity , the threshold voltage V th of the thin film transistor is reduced faster), thus, the first thin film transistor and the second thin film transistor T P T R can be contrasted. Different first thin film transistor and a second thin film transistor T P T R of the threshold voltage V th offset, will result in different resistance change amount of the first thin film transistor and a second thin film transistor T P T R, the first thin film transistor is located The voltage of the first node N between the T P and the second thin film transistor T R will change. According to the voltage change of the first node N, the illumination intensity of the organic light emitting diode 22, that is, the brightness of the organic light emitting diode 22 can be detected. .
在本发明实施方式中，第一薄膜晶体管TP与第二薄膜晶体管TR的位置相邻。将第一薄膜晶体管TP或第二薄膜晶体管TR避开有机发光二极管22的光照的方法包括但不限于为：在需要遮光的薄膜晶体管与有机发光二极管22之间设置不透光薄膜。不透光薄膜可以为呈块状，多个块状的不透光薄膜分别设置在每个需要遮光的薄膜晶体管与有机发光二极管22之间。不透光薄膜也可以为一整层的结构，并在不透光薄膜的与不需要遮光的薄膜晶体管对应的位置处挖孔，以使得不需要遮光的薄膜晶体管暴露在有机发光二极管22的光照中。In an embodiment of the invention, the first thin film transistor T P is adjacent to the second thin film transistor T R . The method of avoiding the illumination of the organic light emitting diode 22 by the first thin film transistor T P or the second thin film transistor T R includes, but is not limited to, providing an opaque film between the thin film transistor and the organic light emitting diode 22 that require light shielding. The opaque film may be in the form of a block, and a plurality of block-shaped opaque films are respectively disposed between each of the thin film transistors and the organic light emitting diodes 22 that need to be shielded from light. The opaque film may also be a one-layer structure and burrow at a position corresponding to the thin film transistor of the opaque film that does not require light shielding, so that the thin film transistor that does not require light shielding is exposed to the light of the organic light emitting diode 22. in.
请参阅图1，在某些实施方式中，光传感器10在第一电压输入端VGP施加有第一负偏压NBIS及第二电压输入端VGR施加有第二负偏压NBS预定时长后，根据第一节点N的电压变化检测有机发光二极管22的亮度。Referring to FIG. 1 , in some embodiments, the photosensor 10 is applied with a first negative bias NBIS and a second negative input voltage V GR applied to the first voltage input terminal V GP for a predetermined period of time. The brightness of the organic light emitting diode 22 is detected according to the voltage change of the first node N.
也即是说，第一薄膜晶体管TP的栅极施加有第一负偏压NBIS，第二薄膜晶体管TR的栅极施加有第二负偏压NBS。可以理解，当薄膜晶体管的栅极施加有负偏压时，薄膜晶体管的阈值电压Vth将减小。当负偏压与光照同时作用时，将会加快薄膜晶体管的阈值电压Vth的减小，如此，第一薄膜晶体管TP和第二薄膜晶体管TR的电阻变化量不同，第一节点N的电压将发生变化，根据第一节点N的电压变化，即可检测得到有机发光二极管22的亮度。在本发明实施方式中，由于暴露在有机发光二极管22的光 照中的薄膜晶体管，同时被施加有负偏压，薄膜晶体管的阈值电压Vth减小得较快，在预定时长(例如1000秒)后，Vth的偏移量可以达到15V以上，这个偏移量能够掩盖有机发光二极管显示屏100中Vth的不均匀性、薄膜晶体管的劣化以及噪声等因素对Vth的影响，提高了检测结果的精确度。That is, the gate of the first thin film transistor T P is applied with the first negative bias NBIS, and the gate of the second thin film transistor T R is applied with the second negative bias NBS. It can be understood that when a negative bias voltage is applied to the gate of the thin film transistor, the threshold voltage Vth of the thin film transistor will decrease. When the negative bias voltage acts simultaneously with the illumination, the threshold voltage V th of the thin film transistor is accelerated, so that the resistance variations of the first thin film transistor T P and the second thin film transistor T R are different, the first node N The voltage will change, and the brightness of the organic light emitting diode 22 can be detected according to the voltage change of the first node N. In the embodiment of the present invention, since the thin film transistor exposed in the light of the organic light emitting diode 22 is simultaneously applied with a negative bias voltage, the threshold voltage Vth of the thin film transistor is decreased faster, for a predetermined period of time (for example, 1000 seconds). After that, the offset of V th can reach 15V or more. This offset can mask the influence of V th non-uniformity in the organic light emitting diode display panel 100, deterioration of the thin film transistor, and noise on the V th , and improve the detection. The accuracy of the results.
在某些实施方式中，第一负偏压NBIS等于第二负偏压NBS。如此，第一薄膜晶体管TP与第二薄膜晶体管TR施加有同样大小的负偏压，第一节点N的电压变化仅受光照强度的影响，便于光传感器10根据第一节点N的电压变化检测有机发光二极管22的亮度。In some embodiments, the first negative bias NBIS is equal to the second negative bias NBS. As such, the first thin film transistor T P and the second thin film transistor T R are applied with the same negative bias voltage, and the voltage change of the first node N is only affected by the light intensity, which facilitates the change of the voltage of the first sensor N by the photosensor 10 . The brightness of the organic light emitting diode 22 is detected.
在某些实施方式中，当第一薄膜晶体管TP暴露在有机发光二极管22的光照中，第二薄膜晶体管TR避开有机发光二极管22的光照时，光传感器10在根据第一节点N的电压变化检测有机发光二极管22的亮度后，对第一电压输入端VGP施加正偏压以使第一节点N的电压恢复至对第一电压输入端VGP施加第一负偏压NBIS及对第二电压输入端VGR施加第二负偏压NBS前。In some embodiments, when the first thin film transistor T P is exposed to the illumination of the organic light emitting diode 22 and the second thin film transistor T R avoids the illumination of the organic light emitting diode 22, the photosensor 10 is according to the first node N. the voltage change detecting luminance of the organic light emitting diode 22, a first positive bias is applied to the input terminal voltage V GP so that the voltage of the first node N is returned to a first negative bias is applied to a first voltage input terminal NBIS V GP and to The second voltage input terminal V GR is applied before the second negative bias voltage NBS.
可以理解，当第一薄膜晶体管TP的栅极施加有正偏压时，第一薄膜晶体管TP的阈值电压Vth将发生正向偏移，而由于第一薄膜晶体管TP暴露在有机发光二极管22的光照中，光照将会在一定程度上抵消Vth的增加速度，但最终第一节点N的电压能够恢复至第一电压输入端VGP施加第一负偏压NBIS及第二电压输入端VGR施加有第二负偏压NBS前。It will be appreciated, when the gate of the first thin film transistor T P is applied with a positive bias, the first thin film transistor T P is the threshold voltage V th of the occurrence of a positive offset, and since the first thin film transistor T P is exposed to the organic light emitting In the illumination of the diode 22, the illumination will offset the increase rate of V th to some extent, but finally the voltage of the first node N can be restored to the first voltage input terminal V GP to apply the first negative bias NBIS and the second voltage input. The terminal V GR is applied with a second negative bias before the NBS.
在某些实施方式中，当第二薄膜晶体管TR暴露在有机发光二极管22的光照中，第一薄膜晶体管TP避开有机发光二极管22的光照时，光传感器10在根据第一节点N的电压变化检测有机发光二极管22的亮度后，对第二电压输入端VGR施加正偏压以使第一节点N的电压恢复至对第一电压输入端VGP施加第一负偏压NBIS及对第二电压输入端VGR施加第二负偏压NBS前。In some embodiments, when the second thin film transistor T R is exposed to the illumination of the organic light emitting diode 22, the first thin film transistor T P avoids the illumination of the organic light emitting diode 22, the light sensor 10 is according to the first node N. After the voltage change detects the brightness of the OLED 22, a positive bias is applied to the second voltage input terminal V GR to restore the voltage of the first node N to apply a first negative bias NBIS and a pair to the first voltage input terminal V GP . The second voltage input terminal V GR is applied before the second negative bias voltage NBS.
可以理解，当第二薄膜晶体管TR的栅极施加有正偏压时，第二薄膜晶体管TR的阈值电压Vth将发生正向偏移，而由于第二薄膜晶体管TR暴露在有机发光二极管22的光照中，光照将会在一定程度上抵消Vth的增加速度，但最终第一节点N的电压能够恢复至第一电压输入端VGP施加第一负偏压NBIS及第二电压输入端VGR施加有第二负偏压NBS前。It can be understood that when the gate of the second thin film transistor T R is applied with a positive bias voltage, the threshold voltage V th of the second thin film transistor T R will be forwardly shifted, and the second thin film transistor TR is exposed to the organic light emitting diode. In the illumination of 22, the illumination will offset the increase rate of V th to some extent, but finally the voltage of the first node N can be restored to the first voltage input terminal V GP to apply the first negative bias NBIS and the second voltage input terminal V GR is applied before the second negative bias NBS.
在某些实施方式中，光传感器10在第一电压输入端VGP施加有第一正偏压PBIS及第二电压输入端VGR施加有第二正偏压PBS预定时长后，根据第一节点N的电压变化检测有机发光二极管22的亮度。In some embodiments, after the first voltage input terminal V GP is applied with the first positive bias voltage PBIS and the second voltage input terminal V GR is applied with the second positive bias voltage PBS for a predetermined length of time, according to the first node. The voltage change of N detects the brightness of the organic light emitting diode 22.
也即是说，第一薄膜晶体管TP的栅极施加有第一正偏压PBIS，第二薄膜晶体管 TR的栅极施加有第二正偏压PBS。可以理解，当薄膜晶体管的栅极施加有正偏压时，薄膜晶体管的阈值电压Vth将增大。当正偏压与光照同时作用时，光照将会在一定程度上抵消Vth的增加速度，如此，第一薄膜晶体管TP和第二薄膜晶体管TR的电阻变化量不同，第一节点N的电压将发生变化，根据第一节点N的电压变化，即可检测得到有机发光二极管22的亮度。在本发明实施方式中，在预定时长(例如2000秒)后，Vth的偏移量可以达到15V以上，这个偏移量能够掩盖有机发光二极管显示屏100中Vth的不均匀性、薄膜晶体管的劣化以及噪声等因素对Vth的影响，提高了检测结果的精确度。That is, the gate of the first thin film transistor T P is applied with the first positive bias voltage PBIS, and the gate of the second thin film transistor T R is applied with the second positive bias voltage PBS. It can be understood that when the gate of the thin film transistor is applied with a positive bias voltage, the threshold voltage Vth of the thin film transistor will increase. When the positive bias is applied simultaneously with the illumination, the illumination will offset the increase rate of V th to some extent, so that the resistance variations of the first thin film transistor T P and the second thin film transistor T R are different, the first node N The voltage will change, and the brightness of the organic light emitting diode 22 can be detected according to the voltage change of the first node N. In the embodiment of the present invention, after a predetermined period of time (for example, 2000 seconds), the offset of V th can reach 15 V or more, and this offset can mask the unevenness of V th in the organic light emitting diode display panel 100, and the thin film transistor The degradation and the influence of noise and other factors on V th improve the accuracy of the detection results.
在某些实施方式中，第一正偏压PBIS等于第二正偏压PBS。如此，第一薄膜晶体管TP与第二薄膜晶体管TR施加有同样大小的正偏压，第一节点N的电压变化仅受光照强度的影响，便于光传感器10根据第一节点N的电压变化检测有机发光二极管22的亮度。In some embodiments, the first positive bias voltage PBIS is equal to the second positive bias voltage PBS. As such, the first thin film transistor T P and the second thin film transistor T R are applied with the same positive bias voltage, and the voltage change of the first node N is only affected by the light intensity, which facilitates the change of the voltage of the photosensor 10 according to the first node N. The brightness of the organic light emitting diode 22 is detected.
在某些实施方式中，当第一薄膜晶体管TP暴露在有机发光二极管22的光照中，第二薄膜晶体管TR避开有机发光二极管22的光照时，光传感器10在根据第一节点N的电压变化检测有机发光二极管22的亮度后，对第一电压输入端VGP施加负偏压以使第一节点N的电压恢复至对第一电压输入端VGP施加第一正偏压PBIS及对第二电压输入端VGR施加第二正偏压PBS前。In some embodiments, when the first thin film transistor T P is exposed to the illumination of the organic light emitting diode 22 and the second thin film transistor T R avoids the illumination of the organic light emitting diode 22, the photosensor 10 is according to the first node N. the voltage change detecting luminance of the organic light emitting diode 22, a first negative bias is applied to the input terminal voltage V GP so that the voltage of the first node N is restored to a first positive bias voltage PBIS is applied to a first input terminal of the V GP and The second voltage input terminal V GR is applied before the second positive bias PBS.
可以理解，当第一薄膜晶体管TP的栅极施加有负偏压时，第一薄膜晶体管TP的阈值电压Vth将发生负向偏移，而由于第一薄膜晶体管TP暴露在有机发光二极管22的光照中，第一薄膜晶体管TP的阈值电压Vth减小得较快，第一节点N的电压能够较快地恢复至第一电压输入端VGP施加第一正偏压PBIS及第二电压输入端VGR施加有第二正偏压PBS前。It can be understood that when the gate of the first thin film transistor T P is applied with a negative bias voltage, the threshold voltage V th of the first thin film transistor T P will be negatively shifted, and the first thin film transistor T P is exposed to the organic light emission. light diode 22, the first thin film transistor T P is the threshold voltage V th decreases faster, the voltage of the first node N is able to recover more quickly to a first input voltage V GP and applying a first positive bias PBIS The second voltage input terminal V GR is applied with a second positive bias PBS front.
在某些实施方式中，当第二薄膜晶体管TR暴露在有机发光二极管22的光照中，第一薄膜晶体管TP避开有机发光二极管22的光照时，光传感器10在根据第一节点N的电压变化检测有机发光二极管22的亮度后，对第二电压输入端VGR施加负偏压以使第一节点N的电压恢复至对第一电压输入端VGP施加第一正偏压PBIS及对第二电压输入端VGR施加第二正偏压PBS前。In some embodiments, when the second thin film transistor T R is exposed to the illumination of the organic light emitting diode 22, the first thin film transistor T P avoids the illumination of the organic light emitting diode 22, the light sensor 10 is according to the first node N. After the voltage change detects the brightness of the organic light emitting diode 22, a negative bias is applied to the second voltage input terminal V GR to restore the voltage of the first node N to apply a first positive bias voltage PBIS and a pair to the first voltage input terminal V GP . The second voltage input terminal V GR is applied before the second positive bias PBS.
可以理解，当第二薄膜晶体管TR的栅极施加有负偏压时，第二薄膜晶体管TR的阈值电压Vth将发生负向偏移，而由于第二薄膜晶体管TR暴露在有机发光二极管22的光照中，第二薄膜晶体管TR的阈值电压Vth减小得较快，第一节点N的电压能够较快地恢复至第一电压输入端VGP施加第一正偏压PBIS及第二电压输入端VGR施加有第二正偏压PBS前。 It can be understood that when the gate of the second thin film transistor T R is applied with a negative bias voltage, the threshold voltage V th of the second thin film transistor T R will be negatively shifted, and the second thin film transistor T R is exposed to the organic light emission. In the illumination of the diode 22, the threshold voltage Vth of the second thin film transistor T R decreases faster, and the voltage of the first node N can be quickly restored to the first voltage input terminal V GP to apply the first positive bias voltage PBIS and The second voltage input terminal V GR is applied with a second positive bias PBS front.
下面以第一薄膜晶体管TP暴露在有机发光二极管22的光照中，第二薄膜晶体管TR避开有机发光二极管22的光照为例来具体说明本发明实施方式的光传感器10的工作原理。The operation of the photosensor 10 of the embodiment of the present invention will be specifically described below by taking the first thin film transistor T P exposed to the illumination of the organic light emitting diode 22 and the second thin film transistor T R avoiding the illumination of the organic light emitting diode 22 as an example.
首先，对第一薄膜晶体管TP的栅极施加第一负偏压NBIS，对第二薄膜晶体管TR的栅极施加第二负偏压NBS。第一负偏压NBIS的大小可以与第二负偏压NBS的大小相同。在相同时间内，第一薄膜晶体管TP的阈值电压Vth的负向偏移量将大于第二薄膜晶体管TR的阈值电压Vth的负向偏移量，因此，第一薄膜晶体管TP的电阻减小量会更大。在某些实施方式中，第一预定电压VCOM可以为0V，也即是说，第一薄膜晶体管TP的源极接地。第二预定电压可以为VD。第一薄膜晶体管TP与第二薄膜晶体管TR构成分压电路。由于第一薄膜晶体管TP的电阻减小量比第二薄膜晶体管TR的电阻减小量更大，因此，第一薄膜晶体管TP与第二薄膜晶体管TR之间的第一节点N的电压将减小，根据第一节点N的电压减小量即可确定光照的强度。例如，假设第一薄膜晶体管TP与第二薄膜晶体管TR为相同的薄膜晶体管，在预定时长后，由于阈值电压Vth的偏移，使得第一节点N的电压Vn由VD/2变为VD/5，根据第一节点N的电压变化3VD/10即可计算得到有机发光二极管22的亮度。之后，对第一薄膜晶体管TP的栅极施加正偏压，以使得第一薄膜晶体管TP的阈值电压Vth发生正向偏移，直到第一节点N的电压Vn由VD/5变为VD/2，即，第一薄膜晶体管TP的阈值电压Vth恢复初始状态。First, a first negative bias NBIS is applied to the gate of the first thin film transistor TP, and a second negative bias NBS is applied to the gate of the second thin film transistor TR. The size of the first negative bias NBIS may be the same as the size of the second negative bias NBS. In the same time, the threshold voltage V th of the first thin film transistor T P negative offset amount larger than a negative second th thin film transistor T R V to the threshold voltage shift, therefore, the first thin film transistor T P The amount of resistance reduction will be greater. In some embodiments, the first predetermined voltage V COM may be 0V, that is, the source of the first thin film transistor T P is grounded. The second predetermined voltage may be V D . The first thin film transistor T P and the second thin film transistor T R constitute a voltage dividing circuit. Since the first thin film transistor T P is greater than the resistance of the resistor is reduced to reduce the amount of the second thin film transistor T R, and therefore, the first between the first thin film transistor and the second thin film transistor T P T R point N The voltage will decrease and the intensity of the illumination can be determined based on the amount of voltage reduction of the first node N. For example, assuming that the first thin film transistor T P and the second thin film transistor T R are the same thin film transistor, after a predetermined period of time, the voltage V n of the first node N is caused by V D /2 due to the shift of the threshold voltage V th When V D /5 is changed, the luminance of the organic light emitting diode 22 can be calculated from the voltage change of the first node N by 3V D /10 . Thereafter, a positive bias is applied to the gate of the first thin film transistor T P such that the threshold voltage V th of the first thin film transistor T P is forwardly shifted until the voltage V n of the first node N is from V D /5 It becomes V D /2, that is, the threshold voltage V th of the first thin film transistor T P returns to the initial state.
当然，也可以在限定第一节点N的电压变化量情况下，检测需要对第一薄膜晶体管TP的栅极施加第一负偏压NBIS及对第二薄膜晶体管TR的栅极施加第二负偏压NBS的时间。例如，检测第一节点N的电压Vn由VD/2变为0V所需要的转换时间，转换时间越短时，表明光照强度越强。因此，根据该转换时间即可计算得到有机发光二极管22的亮度。之后，对第一薄膜晶体管TP的栅极施加正偏压，以使得第一薄膜晶体管TP的阈值电压Vth发生正向偏移，直到第一节点N的电压Vn由0V变为VD/2，即，第一薄膜晶体管TP的阈值电压Vth恢复初始状态。Of course, in the case of limiting the amount of voltage variation of the first node N, it is also possible to detect that a first negative bias NBIS needs to be applied to the gate of the first thin film transistor T P and a second is applied to the gate of the second thin film transistor T R . The time of negative bias NBS. For example, the conversion time required for the voltage V n of the first node N to be changed from V D /2 to 0 V is detected, and the shorter the conversion time, the stronger the illumination intensity. Therefore, the brightness of the organic light emitting diode 22 can be calculated from the conversion time. Thereafter, a positive bias is applied to the gate of the first thin film transistor T P such that the threshold voltage V th of the first thin film transistor T P is forwardly shifted until the voltage V n of the first node N changes from 0 V to V. D / 2, i.e., a first thin film transistor T P is the threshold voltage V th restore the initial state.
在某些实施方式中，有机发光二极管显示屏100根据有机发光二极管22的亮度控制施加在有机发光二极管22的电压大小。In some embodiments, the OLED display 100 controls the magnitude of the voltage applied to the OLED 22 in accordance with the brightness of the OLED 22.
具体地，当检测到有机发光二极管22的亮度低于正常值时，增大施加在有机发光二极管22两端的电压，有机发光二极管22的亮度越低，则施加在有机发光二极管22两端的电压越大，以使得有机发光二极管22的亮度恢复正常，从而避免有机发光二极管显示屏100产生色差。Specifically, when it is detected that the brightness of the organic light emitting diode 22 is lower than a normal value, the voltage applied across the organic light emitting diode 22 is increased, and the lower the brightness of the organic light emitting diode 22, the higher the voltage applied across the organic light emitting diode 22 Large, so that the brightness of the organic light emitting diode 22 returns to normal, thereby avoiding chromatic aberration of the organic light emitting diode display panel 100.
在某些实施方式中，有机发光二极管显示屏100根据有机发光二极管22的亮度控制施加在有机发光二极管22的电流大小。 In some embodiments, the OLED display 100 controls the amount of current applied to the OLED 22 in accordance with the brightness of the OLED 22.
具体地，当检测到有机发光二极管22的亮度低于正常值时，增大施加在有机发光二极管22的电流，有机发光二极管22的亮度越低，则施加在有机发光二极管22的电流越大，以使得有机发光二极管22的亮度恢复正常，从而避免有机发光二极管显示屏100产生色差。Specifically, when it is detected that the luminance of the organic light emitting diode 22 is lower than a normal value, the current applied to the organic light emitting diode 22 is increased, and the lower the luminance of the organic light emitting diode 22, the larger the current applied to the organic light emitting diode 22 is. The brightness of the organic light emitting diode 22 is returned to normal, thereby preventing the OLED display 100 from generating chromatic aberration.
在本说明书的描述中，参考术语“一个实施方式”、“一些实施方式”、“示意性实施方式”、“示例”、“具体示例”或“一些示例”等的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。In the description of the present specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiment", "example", "specific example" or "some examples", etc. Particular features, structures, materials or features described in the manner or examples are included in at least one embodiment or example of the invention. In the present specification, the schematic representation of the above terms does not necessarily mean the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.
流程图中或在此以其他方式描述的任何过程或方法描述可以被理解为，表示包括一个或更多个用于实现特定逻辑功能或过程的步骤的可执行指令的代码的模块、片段或部分，并且本发明的优选实施方式的范围包括另外的实现，其中可以不按所示出或讨论的顺序，包括根据所涉及的功能按基本同时的方式或按相反的顺序，来执行功能，这应被本发明的实施例所属技术领域的技术人员所理解。Any process or method description in the flowcharts or otherwise described herein may be understood to represent a module, segment or portion of code that includes one or more executable instructions for implementing the steps of a particular logical function or process. And the scope of the preferred embodiments of the invention includes additional implementations, in which the functions may be performed in a substantially simultaneous manner or in an opposite order depending on the functions involved, in the order shown or discussed. It will be understood by those skilled in the art to which the embodiments of the present invention pertain.
在流程图中表示或在此以其他方式描述的逻辑和/或步骤，例如，可以被认为是用于实现逻辑功能的可执行指令的定序列表，可以具体实现在任何计算机可读介质中，以供指令执行***、装置或设备(如基于计算机的***、包括处理模块的***或其他可以从指令执行***、装置或设备取指令并执行指令的***)使用，或结合这些指令执行***、装置或设备而使用。就本说明书而言，"计算机可读介质"可以是任何可以包含、存储、通信、传播或传输程序以供指令执行***、装置或设备或结合这些指令执行***、装置或设备而使用的装置。计算机可读介质的更具体的示例(非穷尽性列表)包括以下：具有一个或多个布线的电连接部(控制方法)，便携式计算机盘盒(磁装置)，随机存取存储器(RAM)，只读存储器(ROM)，可擦除可编辑只读存储器(EPROM或闪速存储器)，光纤装置，以及便携式光盘只读存储器(CDROM)。另外，计算机可读介质甚至可以是可在其上打印所述程序的纸或其他合适的介质，因为可以例如通过对纸或其他介质进行光学扫描，接着进行编辑、解译或必要时以其他合适方式进行处理来以电子方式获得所述程序，然后将其存储在计算机存储器中。The logic and/or steps represented in the flowchart or otherwise described herein, for example, may be considered as an ordered list of executable instructions for implementing logical functions, and may be embodied in any computer readable medium, Used in conjunction with, or in conjunction with, an instruction execution system, apparatus, or device (eg, a computer-based system, a system including a processing module, or other system that can fetch instructions and execute instructions from an instruction execution system, apparatus, or device) Or use with equipment. For the purposes of this specification, a "computer-readable medium" can be any apparatus that can contain, store, communicate, propagate, or transport a program for use in an instruction execution system, apparatus, or device, or in conjunction with the instruction execution system, apparatus, or device. More specific examples (non-exhaustive list) of computer readable media include the following: electrical connections (control methods) having one or more wires, portable computer disk cartridges (magnetic devices), random access memory (RAM), Read only memory (ROM), erasable editable read only memory (EPROM or flash memory), fiber optic devices, and portable compact disk read only memory (CDROM). In addition, the computer readable medium may even be a paper or other suitable medium on which the program can be printed, as it may be optically scanned, for example by paper or other medium, followed by editing, interpretation or, if appropriate, other suitable The method is processed to obtain the program electronically and then stored in computer memory.
应当理解，本发明的实施方式的各部分可以用硬件、软件、固件或它们的组合来实现。在上述实施方式中，多个步骤或方法可以用存储在存储器中且由合适的指令执行***执行的软件或固件来实现。例如，如果用硬件来实现，和在另一实施方式中一样，可用本领域公知的下列技术中的任一项或他们的组合来实现：具有用于对数据信 号实现逻辑功能的逻辑门电路的离散逻辑电路，具有合适的组合逻辑门电路的专用集成电路，可编程门阵列(PGA)，现场可编程门阵列(FPGA)等。It should be understood that portions of the embodiments of the invention may be implemented in hardware, software, firmware or a combination thereof. In the above-described embodiments, multiple steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, it can be implemented by any one of the following techniques known in the art or a combination thereof: having a data for A discrete logic circuit that implements a logic function logic gate circuit, an application specific integrated circuit with a suitable combination logic gate circuit, a programmable gate array (PGA), a field programmable gate array (FPGA), and the like.
本技术领域的普通技术人员可以理解实现上述实施例方法携带的全部或部分步骤是可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，该程序在执行时，包括方法实施例的步骤之一或其组合。One of ordinary skill in the art can understand that all or part of the steps carried by the method of implementing the above embodiments can be completed by a program to instruct related hardware, and the program can be stored in a computer readable storage medium. When executed, one or a combination of the steps of the method embodiments is included.
此外，在本发明的各个实施例中的各功能单元可以集成在一个处理模块中，也可以是各个单元单独物理存在，也可以两个或两个以上单元集成在一个模块中。上述集成的模块既可以采用硬件的形式实现，也可以采用软件功能模块的形式实现。所述集成的模块如果以软件功能模块的形式实现并作为独立的产品销售或使用时，也可以存储在一个计算机可读取存储介质中。In addition, each functional unit in each embodiment of the present invention may be integrated into one processing module, or each unit may exist physically separately, or two or more units may be integrated into one module. The above integrated modules can be implemented in the form of hardware or in the form of software functional modules. The integrated modules, if implemented in the form of software functional modules and sold or used as stand-alone products, may also be stored in a computer readable storage medium.
上述提到的存储介质可以是只读存储器，磁盘或光盘等。The above mentioned storage medium may be a read only memory, a magnetic disk or an optical disk or the like.
尽管上面已经示出和描述了本发明的实施方式，可以理解的是，上述实施方式是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施实施进行变化、修改、替换和变型。 Although the embodiments of the present invention have been shown and described, it is understood that the above-described embodiments are illustrative and are not to be construed as limiting the scope of the invention. Implementations are subject to change, modification, replacement, and variations.

Claims (12)

  1. 一种光传感器，用于有机发光二极管显示屏，所述有机发光二极管显示屏包括有机发光二极管层，其特征在于，所述光传感器设置在所述有机发光二极管层上，所述光传感器包括：A light sensor for an organic light emitting diode display screen, the organic light emitting diode display screen comprising an organic light emitting diode layer, wherein the light sensor is disposed on the organic light emitting diode layer, and the light sensor comprises:
    第一薄膜晶体管，所述第一薄膜晶体管的栅极连接第一电压输入端，所述第一薄膜晶体管的源极连接第一预定电压，所述第一薄膜晶体管的漏极连接第一节点；及a first thin film transistor, a gate of the first thin film transistor is connected to a first voltage input end, a source of the first thin film transistor is connected to a first predetermined voltage, and a drain of the first thin film transistor is connected to a first node; and
    第二薄膜晶体管，所述第二薄膜晶体管的栅极连接第二电压输入端，所述第二薄膜晶体管的源极连接所述第一节点，所述第二薄膜晶体管的漏极连接第二预定电压；a second thin film transistor, a gate of the second thin film transistor is connected to a second voltage input terminal, a source of the second thin film transistor is connected to the first node, and a drain of the second thin film transistor is connected to a second predetermined Voltage;
    所述有机发光二极管层包括多个有机发光二极管，所述光传感器用于根据所述第一节点的电压变化检测与所述光传感器对应的一个所述有机发光二极管的亮度。The organic light emitting diode layer includes a plurality of organic light emitting diodes for detecting a brightness of one of the organic light emitting diodes corresponding to the light sensor according to a voltage change of the first node.
  2. 根据权利要求1所述的光传感器，其特征在于，所述光传感器集成在所述有机发光二极管层内。The photosensor of claim 1 wherein said photosensor is integrated within said organic light emitting diode layer.
  3. 根据权利要求1所述的光传感器，其特征在于，所述光传感器在所述第一电压输入端施加有第一负偏压及所述第二电压输入端施加有第二负偏压预定时长后，根据所述第一节点的电压变化检测所述有机发光二极管的亮度。The photosensor according to claim 1, wherein said photosensor has a first negative bias applied to said first voltage input terminal and a second negative bias applied to said second voltage input terminal for a predetermined duration Thereafter, the brightness of the organic light emitting diode is detected according to a voltage change of the first node.
  4. 根据权利要求3所述的光传感器，其特征在于，所述第一负偏压等于所述第二负偏压。The photosensor of claim 3 wherein said first negative bias voltage is equal to said second negative bias voltage.
  5. 根据权利要求3所述的光传感器，其特征在于，当所述第一薄膜晶体管暴露在所述有机发光二极管的光照中，所述第二薄膜晶体管避开所述有机发光二极管的光照时，所述光传感器在根据所述第一节点的电压变化检测所述有机发光二极管的亮度后，对所述第一电压输入端施加正偏压以使所述第一节点的电压恢复至对所述第一电压输入端施加所述第一负偏压及对所述第二电压输入端施加所述第二负偏压前；The photosensor according to claim 3, wherein when the first thin film transistor is exposed to light of the organic light emitting diode, and the second thin film transistor avoids illumination of the organic light emitting diode, After detecting the brightness of the organic light emitting diode according to the voltage change of the first node, applying a positive bias to the first voltage input terminal to restore the voltage of the first node to the first Applying the first negative bias voltage to a voltage input terminal and applying the second negative bias voltage to the second voltage input terminal;
    当所述第二薄膜晶体管暴露在所述有机发光二极管的光照中，所述第一薄膜晶体管避开所述有机发光二极管的光照时，所述光传感器在根据所述第一节点的电压变化检测所述有机发光二极管的亮度后，对所述第二电压输入端施加正偏压以使所述第一节点的电压恢复至对所述第一电压输入端施加所述第一负偏压及对所述第二电压输入端施加所述第二负偏压前。 When the second thin film transistor is exposed to illumination of the organic light emitting diode, the first thin film transistor avoids illumination of the organic light emitting diode, the light sensor is detected according to a voltage change of the first node After the brightness of the organic light emitting diode, applying a positive bias to the second voltage input terminal to restore the voltage of the first node to apply the first negative bias voltage and the pair to the first voltage input end The second voltage input terminal applies the second negative bias voltage.
  6. 根据权利要求1所述的光传感器，其特征在于，所述光传感器在所述第一电压输入端施加有第一正偏压及所述第二电压输入端施加有第二正偏压预定时长后，根据所述第一节点的电压变化检测所述有机发光二极管的亮度。The photosensor according to claim 1, wherein said photosensor has a first positive bias applied to said first voltage input terminal and a second positive bias applied to said second voltage input terminal for a predetermined length of time Thereafter, the brightness of the organic light emitting diode is detected according to a voltage change of the first node.
  7. 根据权利要求6所述的光传感器，其特征在于，所述第一正偏压等于所述第二正偏压。The photosensor of claim 6 wherein said first positive bias voltage is equal to said second positive bias voltage.
  8. 根据权利要求6所述的光传感器，其特征在于，当所述第一薄膜晶体管暴露在所述有机发光二极管的光照中，所述第二薄膜晶体管避开所述有机发光二极管的光照时，所述光传感器在根据所述第一节点的电压变化检测所述有机发光二极管的亮度后，对所述第一电压输入端施加负偏压以使所述第一节点的电压恢复至对所述第一电压输入端施加所述第一正偏压及对所述第二电压输入端施加所述第二正偏压前；The photosensor according to claim 6, wherein when the first thin film transistor is exposed to illumination of the organic light emitting diode, and the second thin film transistor avoids illumination of the organic light emitting diode, After detecting the brightness of the organic light emitting diode according to the voltage change of the first node, the light sensor applies a negative bias voltage to the first voltage input terminal to restore the voltage of the first node to the first Applying the first positive bias voltage to a voltage input terminal and applying the second positive bias voltage to the second voltage input terminal;
    当所述第二薄膜晶体管暴露在所述有机发光二极管的光照中，所述第一薄膜晶体管避开所述有机发光二极管的光照时，所述光传感器在根据所述第一节点的电压变化检测所述有机发光二极管的亮度后，对所述第二电压输入端施加负偏压以使所述第一节点的电压恢复至对所述第一电压输入端施加所述第一正偏压及对所述第二电压输入端施加所述第二正偏压前。When the second thin film transistor is exposed to illumination of the organic light emitting diode, the first thin film transistor avoids illumination of the organic light emitting diode, the light sensor is detected according to a voltage change of the first node After the brightness of the organic light emitting diode, applying a negative bias voltage to the second voltage input terminal to restore the voltage of the first node to apply the first positive bias voltage and the pair to the first voltage input end The second voltage input terminal applies the second positive bias.
  9. 一种有机发光二极管显示屏，其特征在于，包括：An organic light emitting diode display screen, comprising:
    有机发光二极管层，所述有机发光二极管层包括多个有机发光二极管；及An organic light emitting diode layer, the organic light emitting diode layer comprising a plurality of organic light emitting diodes;
    多个权利要求1-8任意一项所述的光传感器，多个所述光传感器设置在所述有机发光二极管层上，多个所述光传感器与多个所述有机发光二极管对应，每个所述光传感器用于根据所述第一节点的电压变化检测与所述光传感器对应的一个所述有机发光二极管的亮度。The photosensor according to any one of claims 1 to 8, wherein a plurality of the photosensors are disposed on the organic light emitting diode layer, and the plurality of photosensors correspond to a plurality of the organic light emitting diodes, each The light sensor is configured to detect a brightness of one of the organic light emitting diodes corresponding to the light sensor according to a voltage change of the first node.
  10. 根据权利要求9所述的有机发光二极管显示屏，其特征在于，所述有机发光二极管显示屏根据所述有机发光二极管的亮度控制施加在所述有机发光二极管的电压大小。The organic light emitting diode display screen according to claim 9, wherein the organic light emitting diode display screen controls a voltage applied to the organic light emitting diode according to a brightness of the organic light emitting diode.
  11. 根据权利要求9所述的有机发光二极管显示屏，其特征在于，所述有机发光二极管显示屏根据所述有机发光二极管的亮度控制施加在所述有机发光二极管的电流大 小。The OLED display according to claim 9, wherein the OLED display controls a large current applied to the OLED according to brightness of the OLED small.
  12. 根据权利要求9所述的有机发光二极管显示屏，其特征在于，沿所述有机发光二极管显示屏的发光方向，所述有机发光二极管显示屏包括依次设置的所述机发光二极管层、封装玻璃、偏光片及盖板。 The OLED display of claim 9, wherein the organic light emitting diode display screen comprises the machine light emitting diode layer, the package glass, and the like, which are sequentially disposed along the light emitting direction of the organic light emitting diode display screen. Polarizer and cover.
PCT/CN2017/107100 2017-10-20 2017-10-20 Light sensor and organic light emitting diode display screen WO2019075746A1 (en)

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