WO2019051659A1 - Semiconductor charge emission test method and apparatus - Google Patents

Semiconductor charge emission test method and apparatus Download PDF

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Publication number
WO2019051659A1
WO2019051659A1 PCT/CN2017/101514 CN2017101514W WO2019051659A1 WO 2019051659 A1 WO2019051659 A1 WO 2019051659A1 CN 2017101514 W CN2017101514 W CN 2017101514W WO 2019051659 A1 WO2019051659 A1 WO 2019051659A1
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region
sample
electrode
conductor
semi
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PCT/CN2017/101514
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French (fr)
Chinese (zh)
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魏艳慧
李国倡
雷清泉
郝春成
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青岛科技大学
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Priority claimed from CN201710816165.XA external-priority patent/CN107515367B/en
Priority claimed from CN201721162336.3U external-priority patent/CN207336703U/en
Application filed by 青岛科技大学 filed Critical 青岛科技大学
Publication of WO2019051659A1 publication Critical patent/WO2019051659A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices

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  • the present application relates to a semi-conductor charge emission testing method and apparatus for implementing charge emission testing of a semi-conductor, and belongs to the field of emission charge testing.
  • High-voltage DC or AC cables are widely used in long-distance large-capacity transmission, but in the process of operation, there is inevitably a phenomenon of charge accumulation.
  • the space charge accumulation causes local electric field distortion and electrical performance degradation inside the cable insulation material, eventually resulting in The insulation material ages, which affects the service life of the cable.
  • the present application mainly provides a semi-conductor charge emission test method and device, which can test the emission of a semi-conductor charge.
  • a first embodiment of the present application provides a method of semiconducting charge emission testing, the method comprising the steps of:
  • S1 a voltage from the power terminal is applied to the first electrode, and then sequentially transmitted to the semiconductor in contact with the first electrode, the sample in contact with the semiconductor, and the sample in contact with the sample. a second electrode, the above process forming a circuit loop;
  • the semiconducting body is divided into a first region of a semiconductor and a second region of a semiconducting body adjacent thereto; the first region of the semiconducting body corresponds to the hollow region, and the second region of the semiconducting body is first The electrodes are in contact;
  • the sample is divided into a first zone of the sample and a second zone of the sample adjacent thereto; the first zone of the sample is in contact with the first zone of the semiconducting body, and the second zone of the sample is Contacting the second region of the semiconducting body;
  • S2 continuously apply voltage to the device until the time specified by the test is reached, and the power is turned off;
  • S4 measuring a charge of the first region of the sample to determine whether the semi-conductor emits a charge to the sample; if the first region of the sample has a charge, determining that the semi-conductor emits a charge to the sample; Otherwise, no charge is emitted.
  • a second embodiment of the present application provides a semiconducting charge emission testing device including a power terminal and a first electrode connected thereto;
  • a hollow region is formed in the first electrode, and a lower surface of the first electrode is in contact with an upper surface of the semiconducting body;
  • the lower surface of the semiconducting body is in contact with the upper surface of the product to be tested
  • the sample is placed on the second electrode.
  • a third embodiment of the present application provides an application of a semiconducting charge emission test method in the field of cable material testing.
  • the semiconducting charge emission test method is the test method described above.
  • a fourth embodiment of the present application provides an application of a semiconducting charge emission test device in the field of cable material testing.
  • the semiconducting charge emission test device is the test device described above.
  • the semi-conductor charge emission testing method and apparatus provided by the present application make it feasible to determine whether a semi-conductor emits electric charge to a sample, and solves the problem of testing the relationship between the semi-conductor and the sample under the test condition.
  • the hollow region of the first electrode is in direct contact with the semiconducting body, and the non-semiconductor is all in contact with the first electrode, thereby making it possible to measure whether the semiconducting body emits electric charge to the sample.
  • the semiconducting charge emission problem studied in the present application can solve the problem that the semiconductor cannot emit a charge directly; the method and device proposed by the present application have high reference for studying the emission of other materials, and research semiconducting The charge emission of the body and the improvement of material properties are of great significance.
  • this application opens up a method and apparatus for testing whether a semiconducting body (or other material) directly emits a charge to a test object, which not only can verify the problem of charge emission of the semiconductor, but also can adopt a subsequent method for the emitted charge. Measurements are made; on the other hand, it provides a reference for other areas that need to solve the same or similar problems.
  • FIG. 1 is a perspective view of a device according to an embodiment of the present application.
  • Figure 2 is a cross-sectional view of Figure 1;
  • Figure 3 is a cross-sectional view of the first electrode
  • a first embodiment of the present application provides a method for testing a semiconducting charge emission, comprising the steps of:
  • the semiconducting body 3 is divided into a semiconducting body first region 31 and a semiconducting body second region 32 adjacent thereto; the semiconducting body first region 31 corresponds to the hollow region 25, and the semiconducting body is The second region 32 is in contact with the first electrode 2;
  • the sample 4 is divided into a first region 41 of the sample and a second region 42 of the sample adjacent thereto; the first region 41 of the sample is in contact with the first region 31 of the semiconducting body, the sample The second region 42 is in contact with the second electrical conductor region 32;
  • S2 continuously apply voltage to the device until the time specified by the test is reached, and the power is turned off;
  • the magnitude of the loading voltage of the semiconducting body 3 to the sample 4 can be adjusted by controlling the applied voltage on the first electrode 2; thereby simulating the case where the semiconducting body 3 emits electric charges at different voltages.
  • the semi-conductor 3 may further include a semi-conductor third region 33, the semi-conductor third region 33 surrounds the semi-conductor second region 32;
  • the sample 4 may further include a third region 43 of the sample, the third region 43 of the sample surrounds the second region 42 of the sample, and the third region 43 of the sample and the third portion of the semi-conductor Zone 33 is in contact.
  • the radial width of the third region 43 of the sample is greater than the radial width of the third region 33 of the semiconducting body.
  • the first electrode 2, the semiconducting body first region 31 and the semiconducting body second region 32 form an equipotential electric field after the voltage is applied.
  • the voltage loading process needs to keep the voltage stable.
  • the time specified in the test in S2 means that the time of loading the voltage can be artificially set according to different test requirements and different test purposes; for example, it can be 10 min, 15 min, 30 min, 45 min, 1 h, 5 h, etc. .
  • the edge portion in the S4, in order to make the measurement result more accurate, in the measurement process, whether the middle portion of the first region 41 of the sample is charged is charged; the edge portion has the possibility of edge discharge or the like. Therefore, measuring the edge portion may make the measurement result inaccurate.
  • the cutting step of the sample 4 may be further included, and the first region 41 of the sample is cut out for charge measurement; the second portion with the semi-conductor may be reduced or eliminated.
  • the region 32 is directly in contact with the interference of the second region 42 of the sample, and thus the measured charge data is more reliable.
  • a conventional charge measurement method such as an electroacoustic pulse method (PEA method) or the like can be employed.
  • PEA method electroacoustic pulse method
  • a second embodiment of the present application provides a semi-conductor charge emission testing device, as shown in FIGS. 1 and 2,
  • the power terminal 1 and the first electrode 2 connected thereto are included;
  • a hollow region 25 is formed in the first electrode 2, and a lower surface 22 of the first electrode 2 is in contact with an upper surface of the semiconducting body 3;
  • the lower surface of the semiconducting body 3 is in contact with the upper surface of the product to be tested 4;
  • the sample 4 is placed on the second electrode 5.
  • the test device can form a current loop after being energized.
  • the power terminal 1 can supply a load voltage to the first electrode 2, for example, can provide high voltage power and ultra high voltage power to the first electrode 2.
  • the power terminal 1 may have a smooth surface structure such as a spherical shape or the like; when in contact with the first electrode 2, the possibility of charge accumulation may be reduced to avoid local space discharge.
  • the first electrode 2 may include an electrode upper surface 21, an electrode lower surface 22, an electrode inner surface 23, and an electrode outer surface 24, wherein The electrode upper surface 21 and the electrode lower surface 22 are respectively adjacent to the electrode inner surface 23 and the electrode outer surface 24; the electrode inner surface 23 forms a hollow region 25; the electrode lower surface 22 and the semiconducting body 3 The upper surface is in contact.
  • the contact between the respective surfaces of the first electrode 2 is a smooth transition surface, such as a rounded corner, a circular arc surface or a spherical surface, thereby preventing the test from being performed.
  • the electric charge generates a charge accumulation through the protruding structure, thereby generating a space discharge or the like.
  • the first electrode 2 may select a torus (the cross section is as shown in the middle of FIG. 3) or a hollow cylinder (the cross section of which is shown in the left side of FIG. 3).
  • the electrode lower surface 22 of an electrode 2 is a flat transition (as shown in Fig. 3).
  • the profile of the longitudinal section of the first electrode 2 may be circular, elliptical or other closed pattern composed of a curve or a combination of a curved line and a straight line, but it is understood that since the lower surface 22 of the electrode is a flat surface, The bottom of the above contour is often a smooth combination of a straight line and the above contour pattern.
  • a cross-sectional view of three first electrodes 2 is shown in Fig. 3, including a rounded rectangular shape, a combined circular and straight line pattern (transition smoothing), and a combination of elliptical and straight lines (smooth transitions) Processing); however, it is to be understood that the shape of the first electrode 2 protected by the present application is not limited thereto.
  • the semiconducting body 3 is a semiconducting material, for example, a semiconductor material for a uniform electric field in a high voltage cable, or other semiconductor material.
  • the semiconducting body 3 is a semiconductive material having a uniform structure and a uniform thickness.
  • the thickness of the semiconducting body 3 may be 0.1-1 mm, preferably 0.2-0.7 mm; it is understood that 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm may be selected according to the actual requirements of the test. 0.7mm, 0.8mm, etc.
  • the semi-conductor 3 can be divided into a semi-conductor first region 31 and a semi-conductor second region 32 adjacent thereto; the semi-conductor first region 31 and the hollow region 25 Correspondingly, the semiconducting second region 32 is in contact with the electrode lower surface 22.
  • the semi-conductor second region 32 can be seen as surrounding the semi-conductor first region 31.
  • the top view of the first region 31 of the semi-conductor is circular, and the top view of the second region 32 of the semi-conductor is located at the periphery thereof. Ring.
  • the semi-conductor 3 may further include a semi-conductor third region 33, and the semi-conductor third region 33 surrounds the semi-conductor second region 32, which may be seen as being half The outermost periphery of the electrical conductor 3.
  • the top view of the third region 33 of the semi-conductor is the outermost ring of the semi-conductor 3.
  • the sample 4 is an insulating material, and an insulating material such as polyethylene, polyvinyl chloride, crosslinked polyethylene or rubber may be used.
  • the sample 4 is selected to be an insulating material having a uniform structure and a uniform thickness.
  • the thickness of the sample 4 may be 0.1-1 mm, preferably 0.2-0.7 mm; it is understood that 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 may be selected according to the actual requirements of the test. Mm, 0.9mm, etc.
  • the sample 4 is divided into a first region 41 of the sample and a second region 42 of the sample adjacent thereto; the first region 41 of the sample and the first region of the semi-conductor In contact with 31, the second region 42 of the sample is in contact with the second region 32 of the semiconducting body.
  • the sample second region 42 surrounds the sample first region 41.
  • the top view of the first region 41 of the sample is circular
  • the top view of the second region 42 of the sample is a ring at the periphery thereof.
  • the sample 4 may further include a third region 43 of the sample, and the third region 43 of the sample surrounds the second region 42 of the sample, and may be regarded as the outermost periphery of the sample 4. And the third region 43 of the sample is in contact with the third region 33 of the semiconducting body.
  • the top view of the third region 43 of the sample is the outermost ring of the sample 4.
  • the radial width of the third region 43 of the sample is larger than the radial width of the third region 33 of the semi-conductor, so that the third region 33 of the semi-conductor can be completely placed in the sample. There are 43 areas on the third floor, and there is still space left.
  • the third region 43 of the sample may also have a charge, but the region is generally not used as a charge measurement region in actual operation, because the sample is third compared to the first region 41 of the sample. Region 43 may produce edge discharge and charge divergence behavior.
  • a third embodiment of the present application provides an application of a semiconducting charge emission test method in the field of cable material testing, particularly in the testing of cable semiconducting layers and insulating layers.
  • the semiconducting charge emission test method is the test method described above.
  • a fourth embodiment of the present application provides an application of a semiconducting charge emission test device in the field of cable material testing, particularly in the testing of cable semiconducting layers and insulating layers.
  • the semiconducting charge emission test device is the test device described above.
  • the material of the sample 4 can be utilized as an insulating layer material in the cable by testing whether the semiconducting body 3 emits electric charge on the sample 4; or testing the insulation by applying different levels of voltage.
  • the layer material is suitable for the voltage level used and so on. Specifically, at least the following two judgments can be made:
  • sample material For the existing sample 4 (insulating layer material), if it is found that there is no charge in the sample 4, that is, the semi-conductor 3 does not discharge the sample 4, then in practice, it is not Charge leakage due to the use of test materials Or the leakage is very low, and thus does not reduce the power transmission efficiency, then such sample material is an optional insulating layer material; otherwise, other suitable materials may be needed instead, thereby promoting the development of new materials.
  • the probability of emitting charges between the semiconducting body 3 and the sample 4 can be reduced by improving the material of the semiconducting body 3.
  • the method and apparatus of the present application are not limited to testing of cable materials, and other fields having the same testing requirements can be utilized.

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Abstract

Disclosed are a semiconductor charge emission test method and apparatus, belonging to the field of charge emission tests. The method comprises: S1: loading a voltage from a power source end (1) to a first electrode (2), and then successively transmitting same to a semiconductor (3), a sample (4) and a second electrode (5), wherein the process forms a circuit loop, and a hollow area (25) is formed in the first electrode (2); S2: continuing to load the voltage to an apparatus, and disconnecting a power source until a required test time is reached; S3: removing the apparatus, and retaining the sample (4); and S4: measuring charges in a first area (41) of the sample (4). The apparatus comprises a power source end (1) and a first electrode (2) connected thereto, wherein a hollow area (25) is formed in the first electrode (2), the first electrode (2) is in contact with a semiconductor (3), the semiconductor (3) is in contact with a sample (4) to be tested, and the sample (4) is placed on a second electrode (5). The present invention is used for testing whether a semiconductor (3) emits charges to a sample (4), thereby facilitating the improvement or rational use of materials.

Description

半导电体电荷发射测试方法及装置Semi-conductor charge emission test method and device 技术领域Technical field
本申请涉及一种半导电体电荷发射测试方法及装置，用于实现半导电体的电荷发射测试，属于发射电荷测试领域。The present application relates to a semi-conductor charge emission testing method and apparatus for implementing charge emission testing of a semi-conductor, and belongs to the field of emission charge testing.
背景技术Background technique
高压电直流或交流电缆在远距离大容量输电中广泛应用，但运行过程中，不可避免地存在电荷积聚现象，空间电荷积聚会导致电缆绝缘层材料内部局部电场畸变和电气性能下降，最终造成绝缘层材料老化，从而影响电缆的使用寿命。High-voltage DC or AC cables are widely used in long-distance large-capacity transmission, but in the process of operation, there is inevitably a phenomenon of charge accumulation. The space charge accumulation causes local electric field distortion and electrical performance degradation inside the cable insulation material, eventually resulting in The insulation material ages, which affects the service life of the cable.
因此研究半导电体，尤其是高压直流电缆中半导电体的空间电荷的发射问题，尤其是对绝缘层材料的发射问题，对开发新型材料、以及抑制电荷发射方法的提出均具有重要意义。但是目前并没有半导电体电荷发射的测试方法和装置，更没有类似的发射测试方法和装置可供借鉴。Therefore, the study of the space charge emission of semiconductors, especially the high-conductivity DC cables, especially for the emission of insulating materials, is of great significance for the development of new materials and the suppression of charge emission methods. However, there is currently no test method and device for semi-conductor charge emission, and there is no similar emission test method and device for reference.
发明内容Summary of the invention
针对上述问题，本申请主要提供了一种半导电体电荷发射测试方法及装置，可测试半导电体电荷的发射情况。In view of the above problems, the present application mainly provides a semi-conductor charge emission test method and device, which can test the emission of a semi-conductor charge.
本申请的第一种实施方式提供了一种半导电体电荷发射测试方法，所述方法包括以下步骤：A first embodiment of the present application provides a method of semiconducting charge emission testing, the method comprising the steps of:
S1：来自电源端的电压加载于第一电极上，然后依次传递至与所述第一电极相接触的半导电体、与所述半导电体相接触的试品、与所述试品相接触的第二电极，上述过程形成一个电路回路；S1: a voltage from the power terminal is applied to the first electrode, and then sequentially transmitted to the semiconductor in contact with the first electrode, the sample in contact with the semiconductor, and the sample in contact with the sample. a second electrode, the above process forming a circuit loop;
所述第一电极内形成空心区；Forming a hollow region in the first electrode;
所述半导电体分为半导电体第一区和与其相邻的半导电体第二区；所述半导电体第一区与空心区相对应，所述半导电体第二区与第一电极相接触；The semiconducting body is divided into a first region of a semiconductor and a second region of a semiconducting body adjacent thereto; the first region of the semiconducting body corresponds to the hollow region, and the second region of the semiconducting body is first The electrodes are in contact;
所述试品分为试品第一区和与其相邻的试品第二区；所述试品第一区与所述半导电体第一区相接触，所述试品第二区与所述半导电体第二区相接触；The sample is divided into a first zone of the sample and a second zone of the sample adjacent thereto; the first zone of the sample is in contact with the first zone of the semiconducting body, and the second zone of the sample is Contacting the second region of the semiconducting body;
S2：持续给装置加载电压，直至达到测试规定的时间，断开电源；S2: continuously apply voltage to the device until the time specified by the test is reached, and the power is turned off;
S3：移走装置，保留试品； S3: remove the device and keep the sample;
S4：测量所述试品第一区的电荷，以确定所述半导电体是否对试品发射电荷；如果所述试品第一区具有电荷，则确定半导电体对试品发射了电荷；反之，则没有发射电荷。S4: measuring a charge of the first region of the sample to determine whether the semi-conductor emits a charge to the sample; if the first region of the sample has a charge, determining that the semi-conductor emits a charge to the sample; Otherwise, no charge is emitted.
本申请的第二种实施方式提供了一种半导电体电荷发射测试装置，包括电源端和与其相连的第一电极；A second embodiment of the present application provides a semiconducting charge emission testing device including a power terminal and a first electrode connected thereto;
所述第一电极内形成空心区，所述第一电极的下表面与半导电体的上表面相接触；a hollow region is formed in the first electrode, and a lower surface of the first electrode is in contact with an upper surface of the semiconducting body;
所述半导电体的下表面与待测试品的上表面相接触；The lower surface of the semiconducting body is in contact with the upper surface of the product to be tested;
所述试品放置在第二电极上。The sample is placed on the second electrode.
本申请的第三种实施方式提供了一种半导电体电荷发射测试方法在电缆材料测试领域的运用。所述半导电体电荷发射测试方法为前文所述的测试方法。A third embodiment of the present application provides an application of a semiconducting charge emission test method in the field of cable material testing. The semiconducting charge emission test method is the test method described above.
本申请的第四种实施方式提供了一种半导电体电荷发射测试装置在电缆材料测试领域的运用。所述半导电体电荷发射测试装置为前文所述的测试装置。A fourth embodiment of the present application provides an application of a semiconducting charge emission test device in the field of cable material testing. The semiconducting charge emission test device is the test device described above.
与现有技术相比，本申请的有益效果为：Compared with the prior art, the beneficial effects of the present application are:
1.本申请提供的半导电体电荷发射测试方法和装置，使得判断半导电体是否对试品发射电荷变得可行，解决了试验条件下测试半导电体和试品间关系的难题。1. The semi-conductor charge emission testing method and apparatus provided by the present application make it feasible to determine whether a semi-conductor emits electric charge to a sample, and solves the problem of testing the relationship between the semi-conductor and the sample under the test condition.
2.第一电极的空心区与半导电体直接接触，而非半导电体全部与第一电极接触，从而使得测量半导电体是否向试品发射电荷成为可能。2. The hollow region of the first electrode is in direct contact with the semiconducting body, and the non-semiconductor is all in contact with the first electrode, thereby making it possible to measure whether the semiconducting body emits electric charge to the sample.
3.本申请中，从对试品的电荷的测量(空心区对应区域)，来反推半导电体是否对试品发射电荷，从而判断半导电体是否具有对试品发射电荷的行为。3. In the present application, from the measurement of the charge of the sample (the corresponding region of the hollow region), whether the semi-conductor emits a charge to the sample is reversed, thereby judging whether the semi-conductor has an action of emitting a charge to the sample.
4.本申请研究的半导电体电荷发射问题，可以解决无法直接测量半导体是否发射电荷的难题；本申请提出的方法和装置对于研究其他材料的发射具有很高的参考性，且对研究半导电体的电荷发射及提高材料特性具有重要的意义。4. The semiconducting charge emission problem studied in the present application can solve the problem that the semiconductor cannot emit a charge directly; the method and device proposed by the present application have high reference for studying the emission of other materials, and research semiconducting The charge emission of the body and the improvement of material properties are of great significance.
5.本申请一方面开辟了测试半导电体(或其他材料)是否向被测试品直接发射电荷的方法和装置，不仅可以验证半导电体电荷发射的问题，还可采取后续方法对发射的电荷进行测量；另一方面也为其他领域需要解决相同或相似的问题提供了借鉴。5. On the one hand, this application opens up a method and apparatus for testing whether a semiconducting body (or other material) directly emits a charge to a test object, which not only can verify the problem of charge emission of the semiconductor, but also can adopt a subsequent method for the emitted charge. Measurements are made; on the other hand, it provides a reference for other areas that need to solve the same or similar problems.
附图说明DRAWINGS
图1是本申请一种实施方式的装置的立体示意图；1 is a perspective view of a device according to an embodiment of the present application;
图2是图1的剖视图；Figure 2 is a cross-sectional view of Figure 1;
图3是第一电极的截面图；Figure 3 is a cross-sectional view of the first electrode;
图中编号：1电源端，2第一电极，21电极上表面，22电极下表面，23电极内表面， 24电极外表面，25空心区，3半导电体，31半导电体第一区，32半导电体第二区，33半导电体第三区，4试品，41试品第一区，42试品第二区，43试品第三区，5第二电极。Number in the figure: 1 power terminal, 2 first electrode, 21 electrode upper surface, 22 electrode lower surface, 23 electrode inner surface, 24 electrode outer surface, 25 hollow area, 3 semi-conductor, 31 semi-conductor first area, 32 semi-conductor second area, 33 semi-conductor third area, 4 sample, 41 sample first area, 42 The second zone of the sample, the third zone of the 43 sample, and the second electrode of the 5th.
具体实施方式Detailed ways
以下结合具体实施方式和附图对本申请的技术方案进行详实的阐述，然而应当理解，在没有进一步叙述的情况下，一个实施方式中的元件、结构和特征也可以有益地结合到其他实施方式中，并不限于单一的累加。The technical solutions of the present application are explained in detail below with reference to the specific embodiments and the accompanying drawings. However, it should be understood that the elements, structures and features of one embodiment may be beneficially incorporated into other embodiments without further recitation. It is not limited to a single accumulation.
在本申请的描述中，需要说明的是，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性；“内侧”或“外周”都是相对于图中的方向，而非对其位置的绝对限制。所述的实施方式仅仅是对本申请的优选实施方式进行描述，并非对本申请的范围进行限定，在不脱离本申请设计精神的前提下，本领域普通技术人员对本申请的技术方案作出的各种变形和改进，均应落入本申请权利要求书确定的保护范围内。In the description of the present application, it should be noted that the terms "first", "second" and the like are used for descriptive purposes only, and are not to be construed as indicating or implying relative importance; "inside" or "outer" are relative In the direction of the figure, not an absolute limit on its position. The embodiments described are merely illustrative of the preferred embodiments of the present application, and are not intended to limit the scope of the present application, and various modifications made by those skilled in the art to the technical solutions of the present application without departing from the spirit of the present application. And improvements are intended to fall within the scope of protection defined by the claims of the present application.
1.半导电体电荷发射测试方法1. Semi-conductor charge emission test method
本申请的第一种实施方式提供了一种半导电体电荷发射测试方法，包括以下步骤：A first embodiment of the present application provides a method for testing a semiconducting charge emission, comprising the steps of:
S1：来自电源端1的电压加载于第一电极2上，然后依次传递至与所述第一电极2相接触的半导电体3、与所述半导电体3相接触的试品4、与所述试品4相接触的第二电极5，上述过程形成一个电路回路；S1: the voltage from the power supply terminal 1 is applied to the first electrode 2, and then sequentially transmitted to the semiconducting body 3 in contact with the first electrode 2, the sample 4 in contact with the semiconducting body 3, and The second electrode 5 in contact with the sample 4, the above process forms a circuit loop;
所述第一电极2内形成空心区25；Forming a hollow region 25 in the first electrode 2;
所述半导电体3分为半导电体第一区31和与其相邻的半导电体第二区32；所述半导电体第一区31与空心区25相对应，所述半导电体第二区32与第一电极2相接触；The semiconducting body 3 is divided into a semiconducting body first region 31 and a semiconducting body second region 32 adjacent thereto; the semiconducting body first region 31 corresponds to the hollow region 25, and the semiconducting body is The second region 32 is in contact with the first electrode 2;
所述试品4分为试品第一区41和与其相邻的试品第二区42；所述试品第一区41与所述半导电体第一区31相接触，所述试品第二区42与所述半导电体第二区32相接触；The sample 4 is divided into a first region 41 of the sample and a second region 42 of the sample adjacent thereto; the first region 41 of the sample is in contact with the first region 31 of the semiconducting body, the sample The second region 42 is in contact with the second electrical conductor region 32;
S2：持续给装置加载电压，直至达到测试规定的时间，断开电源；S2: continuously apply voltage to the device until the time specified by the test is reached, and the power is turned off;
S3：移走装置，保留试品4；S3: remove the device, and retain the sample 4;
S4：测量所述试品第一区41的电荷，以确定所述半导电体3是否对试品4发射电荷；如果所述试品第一区41具有电荷，则确定半导电体3对试品4发射了电荷；反之，则没有发射电荷。S4: measuring the charge of the first region 41 of the sample to determine whether the semi-conductor 3 emits a charge to the sample 4; if the first region 41 of the sample has a charge, determining the test of the semi-conductor 3 Product 4 emits a charge; otherwise, it does not emit a charge.
1.1关于S1：1.1 About S1:
所述S1中，整个过程在半导电体电荷发射测试装置中进行。可理解为所述的各个部件均属于测试装置。 In the above S1, the entire process is carried out in a semiconducting charge emission test device. It can be understood that each of the components described is a test device.
所述S1中，可通过控制第一电极2上的施加电压，来调节半导电体3对试品4的加载电压的幅值；从而可模拟不同电压下半导电体3发射电荷的情况。In the S1, the magnitude of the loading voltage of the semiconducting body 3 to the sample 4 can be adjusted by controlling the applied voltage on the first electrode 2; thereby simulating the case where the semiconducting body 3 emits electric charges at different voltages.
作为一种优选的实施方式，所述S1中，所述半导电体3还可包括半导电体第三区33，所述半导电体第三区33环绕所述半导电体第二区32；所述试品4还可包括试品第三区43，所述试品第三区43环绕所述试品第二区42，且所述试品第三区43与所述半导电体第三区33相接触。As a preferred embodiment, in the S1, the semi-conductor 3 may further include a semi-conductor third region 33, the semi-conductor third region 33 surrounds the semi-conductor second region 32; The sample 4 may further include a third region 43 of the sample, the third region 43 of the sample surrounds the second region 42 of the sample, and the third region 43 of the sample and the third portion of the semi-conductor Zone 33 is in contact.
进一步地，所述试品第三区43的径向宽度大于所述半导电体第三区33的径向宽度。Further, the radial width of the third region 43 of the sample is greater than the radial width of the third region 33 of the semiconducting body.
1.2关于S2：1.2 About S2:
所述S2中，第一电极2、半导电体第一区31和半导电体第二区32在加载电压后形成等电位电场。电压加载过程需要保持电压稳定。In the S2, the first electrode 2, the semiconducting body first region 31 and the semiconducting body second region 32 form an equipotential electric field after the voltage is applied. The voltage loading process needs to keep the voltage stable.
所述S2中的测试规定的时间是指：加载电压的时间可以根据不同的测试要求、不同的测试目的而人为设置不同的时间；比如可以为10min，15min，30min，45min，1h，5h等等。例如需要测试1h内，在某一电压下，半导电体3是否对试品4发射电荷，那么需要将加载电压的时间控制在1h左右即可。The time specified in the test in S2 means that the time of loading the voltage can be artificially set according to different test requirements and different test purposes; for example, it can be 10 min, 15 min, 30 min, 45 min, 1 h, 5 h, etc. . For example, it is necessary to test whether the semiconducting body 3 emits electric charge to the sample 4 within a certain voltage within 1 h, and then it is necessary to control the time of the loading voltage to about 1 h.
1.3关于S3：1.3 About S3:
所述S3中，当从装置中分离出试品4时，需要小心操作，避免试品4与其他材料或物体接触，如操作人员，防止电荷量发生变化；保持试品4不弯折以及不受损，以免测量结果不准确。In the S3, when the sample 4 is separated from the device, careful operation is required to prevent the sample 4 from coming into contact with other materials or objects, such as an operator, to prevent a change in the amount of charge; keeping the sample 4 not bent and not Damaged to avoid inaccurate measurement results.
1.4关于S4：1.4 About S4:
作为一种优选的实施方式，所述S4中，为了使得测量结果更加准确，在测量过程中，测量所述试品第一区41的中间部位是否有电荷；边缘部位由于存在边缘放电等可能性，因此测量边缘部位可能使得测量结果不准确。As a preferred embodiment, in the S4, in order to make the measurement result more accurate, in the measurement process, whether the middle portion of the first region 41 of the sample is charged is charged; the edge portion has the possibility of edge discharge or the like. Therefore, measuring the edge portion may make the measurement result inaccurate.
作为一种优选的实施方式，在S4进行测量前，还可以包括对试品4的切割步骤，将所述试品第一区41切割出来进行电荷测量；可以减少或免除与半导电体第二区32直接接触的试品第二区42的干扰，从而得到的测量电荷数据更加可靠。As a preferred embodiment, before the measurement is performed in S4, the cutting step of the sample 4 may be further included, and the first region 41 of the sample is cut out for charge measurement; the second portion with the semi-conductor may be reduced or eliminated. The region 32 is directly in contact with the interference of the second region 42 of the sample, and thus the measured charge data is more reliable.
进一步地，优选在切割后的所述试品第一区41的中间部位进行电荷测量。Further, it is preferable to carry out charge measurement at the intermediate portion of the first region 41 of the sample after cutting.
所述S4中，在测量试品4中是否有电荷时，可以采用常规的电荷测量方法，例如电声脉冲法(PEA法)等等。In the S4, when there is a charge in the measurement sample 4, a conventional charge measurement method such as an electroacoustic pulse method (PEA method) or the like can be employed.
2.半导电体电荷发射测试装置 2. Semi-conductor charge emission testing device
本申请的第二种实施方式提供了一种半导电体电荷发射测试装置，如图1和图2所示，A second embodiment of the present application provides a semi-conductor charge emission testing device, as shown in FIGS. 1 and 2,
包括电源端1和与其相连的第一电极2；The power terminal 1 and the first electrode 2 connected thereto are included;
所述第一电极2内形成空心区25，所述第一电极2的下表面22与半导电体3的上表面相接触；a hollow region 25 is formed in the first electrode 2, and a lower surface 22 of the first electrode 2 is in contact with an upper surface of the semiconducting body 3;
所述半导电体3的下表面与待测试品4的上表面相接触；The lower surface of the semiconducting body 3 is in contact with the upper surface of the product to be tested 4;
所述试品4放置在第二电极5上。The sample 4 is placed on the second electrode 5.
所述测试装置在通电后可以形成一个电流回路。The test device can form a current loop after being energized.
2.1关于电源端12.1 About the power terminal 1
所述电源端1可为第一电极2提供加载的电压，例如可为第一电极2提供高压电、超高压电。The power terminal 1 can supply a load voltage to the first electrode 2, for example, can provide high voltage power and ultra high voltage power to the first electrode 2.
作为一种优选的实施方式，所述电源端1可选具有光滑面的结构，如球形等；在与第一电极2接触时，可减少电荷聚集的可能性，避免局部空间放电。As a preferred embodiment, the power terminal 1 may have a smooth surface structure such as a spherical shape or the like; when in contact with the first electrode 2, the possibility of charge accumulation may be reduced to avoid local space discharge.
2.2关于第一电极22.2 About the first electrode 2
作为一种优选的实施方式，如图1-3所示，具体地，所述第一电极2可包括电极上表面21、电极下表面22、电极内表面23和电极外表面24，其中，所述电极上表面21和电极下表面22均分别与电极内表面23和电极外表面24相邻；所述电极内表面23形成空心区25；所述电极下表面22与所述半导电体3的上表面相接触。As a preferred embodiment, as shown in FIG. 1-3, specifically, the first electrode 2 may include an electrode upper surface 21, an electrode lower surface 22, an electrode inner surface 23, and an electrode outer surface 24, wherein The electrode upper surface 21 and the electrode lower surface 22 are respectively adjacent to the electrode inner surface 23 and the electrode outer surface 24; the electrode inner surface 23 forms a hollow region 25; the electrode lower surface 22 and the semiconducting body 3 The upper surface is in contact.
作为一种优选的实施方式，所述第一电极2的各个表面之间的接触处均为光滑过渡面，如可采用圆角、圆弧面或者球面等方式过渡，由此可防止在进行测试时，电荷通过突出的结构产生电荷聚集，进而产生空间放电等。As a preferred embodiment, the contact between the respective surfaces of the first electrode 2 is a smooth transition surface, such as a rounded corner, a circular arc surface or a spherical surface, thereby preventing the test from being performed. At the time, the electric charge generates a charge accumulation through the protruding structure, thereby generating a space discharge or the like.
作为一种优选的实施方式，所述第一电极2可选择圆环体(其截面如图3中间图所示)或中空圆柱体(其截面如图3左侧图所示)，所述第一电极2的电极下表面22为平滑过渡而得的平面(如图3所示)。As a preferred embodiment, the first electrode 2 may select a torus (the cross section is as shown in the middle of FIG. 3) or a hollow cylinder (the cross section of which is shown in the left side of FIG. 3). The electrode lower surface 22 of an electrode 2 is a flat transition (as shown in Fig. 3).
所述的第一电极2的纵向截面的轮廓可为圆形、椭圆形或其他由曲线或曲线和直线组合构成的封闭图形，但值得理解的是，由于所述电极下表面22为平面，因此，上述轮廓的底部往往是直线与上述轮廓图形的平滑结合。图3中示出了三种第一电极2的截面图，包括圆角处理后的矩形，圆形和直线的结合图形(过渡处圆滑处理)，以及椭圆形和直线的结合图形(过渡处圆滑处理)；但是值得理解的是，本申请所保护的第一电极2的形状并不局限于此。The profile of the longitudinal section of the first electrode 2 may be circular, elliptical or other closed pattern composed of a curve or a combination of a curved line and a straight line, but it is understood that since the lower surface 22 of the electrode is a flat surface, The bottom of the above contour is often a smooth combination of a straight line and the above contour pattern. A cross-sectional view of three first electrodes 2 is shown in Fig. 3, including a rounded rectangular shape, a combined circular and straight line pattern (transition smoothing), and a combination of elliptical and straight lines (smooth transitions) Processing); however, it is to be understood that the shape of the first electrode 2 protected by the present application is not limited thereto.
2.3关于半导电体3 2.3 About semiconducting body 3
本申请中，所述半导电体3是一种半导电材料，例如可以选择高压电缆中用于均匀电场的半导体材料，或者其他半导体材料。In the present application, the semiconducting body 3 is a semiconducting material, for example, a semiconductor material for a uniform electric field in a high voltage cable, or other semiconductor material.
作为一种优选的实施方式，所述半导电体3为结构均匀、厚度均匀的半导电材料。测试中，所述半导电体3的厚度可为0.1-1mm，优选0.2-0.7mm；可以理解的是，根据测试的实际需求可选用0.2mm、0.3mm、0.4mm、0.5mm、0.6mm、0.7mm、0.8mm等等。As a preferred embodiment, the semiconducting body 3 is a semiconductive material having a uniform structure and a uniform thickness. In the test, the thickness of the semiconducting body 3 may be 0.1-1 mm, preferably 0.2-0.7 mm; it is understood that 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm may be selected according to the actual requirements of the test. 0.7mm, 0.8mm, etc.
作为一种优选的实施方式，所述半导电体3可分为半导电体第一区31和与其相邻的半导电体第二区32；所述半导电体第一区31与空心区25相对应，所述半导电体第二区32与电极下表面22相接触。As a preferred embodiment, the semi-conductor 3 can be divided into a semi-conductor first region 31 and a semi-conductor second region 32 adjacent thereto; the semi-conductor first region 31 and the hollow region 25 Correspondingly, the semiconducting second region 32 is in contact with the electrode lower surface 22.
本实施方式中，可看做所述半导电体第二区32环绕所述半导电体第一区31。尤其是当第一电极2为中空圆柱体或圆环体时，所述半导电体第一区31的俯视图即为圆形，所述半导电体第二区32的俯视图即为位于其***的圆环。In this embodiment, the semi-conductor second region 32 can be seen as surrounding the semi-conductor first region 31. In particular, when the first electrode 2 is a hollow cylinder or a torus, the top view of the first region 31 of the semi-conductor is circular, and the top view of the second region 32 of the semi-conductor is located at the periphery thereof. Ring.
作为一种优选的实施方式，所述半导电体3还可包括半导电体第三区33，所述半导电体第三区33环绕所述半导电体第二区32，可看做位于半导电体3的最***。As a preferred embodiment, the semi-conductor 3 may further include a semi-conductor third region 33, and the semi-conductor third region 33 surrounds the semi-conductor second region 32, which may be seen as being half The outermost periphery of the electrical conductor 3.
显然，当第一电极2为中空圆柱体时，所述半导电体第三区33的俯视图即为半导电体3中最***的圆环。Obviously, when the first electrode 2 is a hollow cylinder, the top view of the third region 33 of the semi-conductor is the outermost ring of the semi-conductor 3.
值得注意的是，以上分区只是将同一个半导电体3按其与第一电极2接触面的不同而划分为不同的区域，而非将其进行切割分离。It should be noted that the above partitioning only divides the same semiconducting body 3 into different regions according to the difference in the contact surface with the first electrode 2, instead of cutting and separating it.
2.4关于试品4：2.4 About sample 4:
本申请中，所述试品4为绝缘材料，可选用聚乙烯类、聚氯乙烯类、交联聚乙烯类、橡胶类等绝缘材料。In the present application, the sample 4 is an insulating material, and an insulating material such as polyethylene, polyvinyl chloride, crosslinked polyethylene or rubber may be used.
作为一种优选的实施方式，在测试中，选择试品4为结构均匀、厚度均匀的绝缘材料。所述试品4的厚度可为0.1-1mm，优选0.2-0.7mm；可以理解的是，根据测试的实际需求可选用0.2mm、0.3mm、0.4mm、0.5mm、0.6mm、0.7mm、0.8mm、0.9mm等等。As a preferred embodiment, in the test, the sample 4 is selected to be an insulating material having a uniform structure and a uniform thickness. The thickness of the sample 4 may be 0.1-1 mm, preferably 0.2-0.7 mm; it is understood that 0.2 mm, 0.3 mm, 0.4 mm, 0.5 mm, 0.6 mm, 0.7 mm, 0.8 may be selected according to the actual requirements of the test. Mm, 0.9mm, etc.
作为一种优选的实施方式，所述试品4分为试品第一区41和与其相邻的试品第二区42；所述试品第一区41与所述半导电体第一区31相接触，所述试品第二区42与所述半导电体第二区32相接触。As a preferred embodiment, the sample 4 is divided into a first region 41 of the sample and a second region 42 of the sample adjacent thereto; the first region 41 of the sample and the first region of the semi-conductor In contact with 31, the second region 42 of the sample is in contact with the second region 32 of the semiconducting body.
本实施方式中，可看做所述试品第二区42环绕所述试品第一区41。尤其是当第一电极2为中空圆柱体时，所述试品第一区41的俯视图即为圆形，所述试品第二区42的俯视图即为位于其***的圆环。 In the present embodiment, it can be seen that the sample second region 42 surrounds the sample first region 41. In particular, when the first electrode 2 is a hollow cylinder, the top view of the first region 41 of the sample is circular, and the top view of the second region 42 of the sample is a ring at the periphery thereof.
作为一种优选的实施方式，所述试品4还可包括试品第三区43，所述试品第三区43环绕所述试品第二区42，可看做试品4的最***；且所述试品第三区43与所述半导电体第三区33相接触。As a preferred embodiment, the sample 4 may further include a third region 43 of the sample, and the third region 43 of the sample surrounds the second region 42 of the sample, and may be regarded as the outermost periphery of the sample 4. And the third region 43 of the sample is in contact with the third region 33 of the semiconducting body.
显然，当第一电极2为中空圆柱体时，所述试品第三区43的俯视图即为试品4中最***的圆环。Obviously, when the first electrode 2 is a hollow cylinder, the top view of the third region 43 of the sample is the outermost ring of the sample 4.
作为一种优选的实施方式，所述试品第三区43的径向宽度大于所述半导电体第三区33的径向宽度，如此半导电体第三区33可以完全放置在试品第三区43上，且***还有剩余空间。As a preferred embodiment, the radial width of the third region 43 of the sample is larger than the radial width of the third region 33 of the semi-conductor, so that the third region 33 of the semi-conductor can be completely placed in the sample. There are 43 areas on the third floor, and there is still space left.
在测试中，所述试品第三区43可能也会有电荷，但是实际操作中一般不采用该区作为电荷测量区，其原因是：相比于试品第一区41，试品第三区43可能产生边缘放电、有电荷发散行为。In the test, the third region 43 of the sample may also have a charge, but the region is generally not used as a charge measurement region in actual operation, because the sample is third compared to the first region 41 of the sample. Region 43 may produce edge discharge and charge divergence behavior.
在测试中，加载的电压等级越高，所需的半导电体第三区33和试品第三区43的面积越大，减少边缘放电发生的可能性。In the test, the higher the voltage level of the load, the larger the area of the required third conductor 33 and the third region 43 of the sample, reducing the possibility of occurrence of edge discharge.
值得注意的是，以上分区只是将同一个试品4按其与半导电体3接触面的不同而划分为不同的区域，而非将其进行切割分离。当然根据测量的实际需要，也可以对其进行相应的切割分析，例如前文步骤S4进行时的切割。It is worth noting that the above partitions only divide the same sample 4 into different regions according to the difference in the contact surface with the semiconducting body 3, instead of cutting and separating them. Of course, according to the actual needs of the measurement, it is also possible to perform a corresponding cutting analysis, such as cutting in the previous step S4.
3.半导电体电荷发射测试方法的运用3. Application of semi-conductor charge emission test method
本申请的第三种实施方式提供了一种半导电体电荷发射测试方法在电缆材料测试领域中的运用，尤其是电缆半导电层和绝缘层测试中的运用。所述半导电体电荷发射测试方法为前文所述的测试方法。A third embodiment of the present application provides an application of a semiconducting charge emission test method in the field of cable material testing, particularly in the testing of cable semiconducting layers and insulating layers. The semiconducting charge emission test method is the test method described above.
4.半导电体电荷发射测试装置的运用4. Application of semi-conductor charge emission test device
本申请的第四种实施方式提供了一种半导电体电荷发射测试装置在电缆材料测试领域中的运用，尤其是电缆半导电层和绝缘层测试中的运用。所述半导电体电荷发射测试装置为前文所述的测试装置。A fourth embodiment of the present application provides an application of a semiconducting charge emission test device in the field of cable material testing, particularly in the testing of cable semiconducting layers and insulating layers. The semiconducting charge emission test device is the test device described above.
在实际的电缆运用中，可以通过测试半导电体3是否对试品4发射电荷，来确定试品4的材质是否可以作为电缆中的绝缘层材料加以利用；或者通过施加不同等级的电压测试绝缘层材料适合运用的电压等级等等。具体地，至少可以做以下两种判断：In actual cable operation, it can be determined whether the material of the sample 4 can be utilized as an insulating layer material in the cable by testing whether the semiconducting body 3 emits electric charge on the sample 4; or testing the insulation by applying different levels of voltage. The layer material is suitable for the voltage level used and so on. Specifically, at least the following two judgments can be made:
(1)对于现有的试品4(绝缘层材料)，经过测量，如果发现试品4中没有电荷，即半导电体3没有对试品4放电，那么在实际中就不会由于所述试品材料的使用而导致电荷泄露 或者泄露量很低，进而不会降低电力传输效率，那么这样的试品材料就是可选的绝缘层材料；反之，则可能需要采用其他合适的材料代替，从而促使新材料的开发。或者，取而代之的，可以通过改进半导电体3的材质，使得半导电体3与试品4之间的发射电荷的几率减小。(1) For the existing sample 4 (insulating layer material), if it is found that there is no charge in the sample 4, that is, the semi-conductor 3 does not discharge the sample 4, then in practice, it is not Charge leakage due to the use of test materials Or the leakage is very low, and thus does not reduce the power transmission efficiency, then such sample material is an optional insulating layer material; otherwise, other suitable materials may be needed instead, thereby promoting the development of new materials. Alternatively, the probability of emitting charges between the semiconducting body 3 and the sample 4 can be reduced by improving the material of the semiconducting body 3.
(2)测试中，对同一种试品4(绝缘层材料)，通过测试多组加载不同等级的高压电的情况，可以判断该试品材料适合的电压等级，从而选择更好地运用该材料，避免大材小用，或者小材弃用。(2) In the test, for the same sample 4 (insulation material), by testing multiple sets of different levels of high-voltage electricity, it is possible to judge the suitable voltage level of the sample material, thereby selecting to better use the sample. Materials, to avoid overuse, or to scrape small materials.
本申请的方法和装置并不局限于电缆材料的测试，其他具有相同测试需求的领域也可以运用。 The method and apparatus of the present application are not limited to testing of cable materials, and other fields having the same testing requirements can be utilized.

Claims (12)

  1. 一种半导电体电荷发射测试方法，其特征在于，包括以下步骤：A method for testing a semiconducting charge emission, comprising the steps of:
    S1：来自电源端(1)的电压加载于第一电极(2)上，然后依次传递至与所述第一电极(2)相接触的半导电体(3)、与所述半导电体(3)相接触的试品(4)、与所述试品(4)相接触的第二电极(5)，上述过程形成一个电路回路；S1: a voltage from the power supply terminal (1) is applied to the first electrode (2), and then sequentially transmitted to the semi-conductor (3) in contact with the first electrode (2), and the semi-conductor ( 3) a sample (4) that is in contact with the second electrode (5) that is in contact with the sample (4), and the above process forms a circuit loop;
    所述第一电极(2)内形成空心区(25)；Forming a hollow region (25) in the first electrode (2);
    所述半导电体(3)分为半导电体第一区(31)和与其相邻的半导电体第二区(32)；所述半导电体第一区(31)与空心区(25)相对应，所述半导电体第二区(32)与第一电极(2)相接触；The semiconducting body (3) is divided into a first region (31) of a semiconductor and a second region (32) of a semiconducting body adjacent thereto; the first region (31) and the hollow region (25) of the semiconducting body Correspondingly, the second region (32) of the semiconducting body is in contact with the first electrode (2);
    所述试品(4)分为试品第一区(41)和与其相邻的试品第二区(42)；所述试品第一区(41)与所述半导电体第一区(31)相接触，所述试品第二区(42)与所述半导电体第二区(32)相接触；The sample (4) is divided into a first region (41) of the sample and a second region (42) of the sample adjacent thereto; the first region (41) of the sample and the first region of the semiconducting body (31) contacting, the second region (42) of the sample is in contact with the second region (32) of the semiconducting body;
    S2：持续给装置加载电压，直至达到测试规定的时间，断开电源；S2: continuously apply voltage to the device until the time specified by the test is reached, and the power is turned off;
    S3：移走装置，保留试品(4)；S3: remove the device and retain the sample (4);
    S4：测量所述试品第一区(41)的电荷，以确定所述半导电体(3)是否对试品(4)发射电荷；如果所述试品第一区(41)具有电荷，则确定半导电体(3)对试品(4)发射了电荷；反之，则没有发射电荷。S4: measuring the charge of the first region (41) of the sample to determine whether the semiconducting body (3) emits a charge to the sample (4); if the first region (41) of the sample has a charge, It is then determined that the semiconducting body (3) emits a charge to the sample (4); otherwise, no charge is emitted.
  2. 根据权利要求1所述的半导电体电荷发射测试方法，其特征在于，所述电压加载过程保持电压稳定；通过控制第一电极(2)上的施加电压，来调节半导电体(3)对试品(4)的加载电压的幅值。The method of testing a semiconducting charge emission according to claim 1, wherein said voltage loading process maintains voltage stability; and adjusting a pair of semiconducting bodies (3) by controlling an applied voltage on said first electrode (2) The magnitude of the loading voltage of the sample (4).
  3. 根据权利要求1或2所述的半导电体电荷发射测试方法，其特征在于，所述S1中，所述半导电体(3)还可包括半导电体第三区(33)，所述半导电体第三区(33)环绕所述半导电体第二区(32)；所述试品(4)还可包括试品第三区(43)，所述试品第三区(43)环绕所述试品第二区(42)，且所述试品第三区(43)与所述半导电体第三区(33)相接触。The semi-conductor charge emission testing method according to claim 1 or 2, wherein in the S1, the semi-conductor (3) further comprises a semi-conductor third region (33), the half The third region (33) of the conductor surrounds the second region (32) of the semiconductor; the sample (4) may further include a third region (43) of the sample, and the third region (43) of the sample The second region (42) of the sample is surrounded, and the third region (43) of the sample is in contact with the third region (33) of the semiconducting body.
  4. 根据权利要求1或2所述的半导电体电荷发射测试方法，其特征在于，所述S4中，测量所述试品第一区(41)的中间部位是否有电荷。The semi-conductor charge emission test method according to claim 1 or 2, wherein in the S4, whether or not an intermediate portion of the first region (41) of the sample is charged is charged.
  5. 根据权利要求1或2所述的半导电体电荷发射测试方法，其特征在于，在S4进行测量前，还可以包括对试品(4)的切割步骤，将所述试品第一区(41)切割出来进行电荷测量。The semi-conductor charge emission test method according to claim 1 or 2, characterized in that before the measurement is performed in S4, a cutting step of the sample (4) may be further included, and the first region of the sample (41) ) Cut out for charge measurement.
  6. 一种半导电体电荷发射测试装置，其特征在于，包括， A semi-conductor charge emission testing device, characterized in that
    电源端(1)和与其相连的第一电极(2)；a power terminal (1) and a first electrode (2) connected thereto;
    所述第一电极(2)内形成空心区(25)，所述第一电极(2)的下表面(22)与半导电体(3)的上表面相接触；a hollow region (25) is formed in the first electrode (2), and a lower surface (22) of the first electrode (2) is in contact with an upper surface of the semiconducting body (3);
    所述半导电体(3)的下表面与待测试品(4)的上表面相接触；The lower surface of the semiconducting body (3) is in contact with the upper surface of the product to be tested (4);
    所述试品(4)放置在第二电极(5)上；The sample (4) is placed on the second electrode (5);
    所述半导电体(3)分为半导电体第一区(31)和与其相邻的半导电体第二区(32)；所述半导电体第一区(31)与空心区(25)相对应，所述半导电体第二区(32)与电极下表面(22)相接触；The semiconducting body (3) is divided into a first region (31) of a semiconductor and a second region (32) of a semiconducting body adjacent thereto; the first region (31) and the hollow region (25) of the semiconducting body Correspondingly, the second region (32) of the semiconducting body is in contact with the lower surface (22) of the electrode;
    所述试品(4)分为试品第一区(41)和与其相邻的试品第二区(42)；所述试品第一区(41)与所述半导电体第一区(31)相接触，所述试品第二区(42)与所述半导电体第二区(32)相接触。The sample (4) is divided into a first region (41) of the sample and a second region (42) of the sample adjacent thereto; the first region (41) of the sample and the first region of the semiconducting body (31) In contact, the second region (42) of the sample is in contact with the second region (32) of the semiconducting body.
  7. 根据权利要求6所述的半导电体电荷发射测试装置，其特征在于，所述第一电极(2)包括电极上表面(21)、电极下表面(22)、电极内表面(23)和电极外表面(24)，其中，所述电极上表面(21)和电极下表面(22)均分别与电极内表面(23)和电极外表面(24)相邻；所述电极内表面(23)形成空心区(25)；所述电极下表面(22)与所述半导电体(3)的上表面相接触。The semi-conductor charge emission testing device according to claim 6, wherein the first electrode (2) comprises an electrode upper surface (21), an electrode lower surface (22), an electrode inner surface (23), and an electrode. An outer surface (24), wherein the electrode upper surface (21) and the electrode lower surface (22) are respectively adjacent to the electrode inner surface (23) and the electrode outer surface (24); the electrode inner surface (23) A hollow region (25) is formed; the lower surface (22) of the electrode is in contact with the upper surface of the semiconducting body (3).
  8. 根据权利要求6或7所述的半导电体电荷发射测试装置，其特征在于，所述第一电极(2)的各个表面之间的接触处均为光滑过渡面。The semiconducting charge emission detecting device according to claim 6 or 7, wherein the contact between the respective surfaces of the first electrode (2) is a smooth transition surface.
  9. 根据权利要求6所述的半导电体电荷发射测试装置，其特征在于，所述半导电体(3)为半导电材料，其厚度为0.1-1mm；所述试品(4)为绝缘材料，其厚度为0.1-1mm。The semi-conductor charge emission testing device according to claim 6, wherein the semiconducting body (3) is a semiconductive material having a thickness of 0.1 to 1 mm; and the sample (4) is an insulating material. Its thickness is 0.1-1 mm.
  10. 根据权利要求6、7或9所述的半导电体电荷发射测试装置，其特征在于，所述半导电体(3)还包括半导电体第三区(33)，所述半导电体第三区(33)环绕所述半导电体第二区(32)；所述试品(4)还包括试品第三区(43)，所述试品第三区(43)环绕所述试品第二区(42)；且所述试品第三区(43)与所述半导电体第三区(33)相接触。The semi-conductor charge emission testing device according to claim 6, 7 or 9, wherein the semi-conductor (3) further comprises a semi-conductor third region (33), the semi-conductor third a region (33) surrounding the second conductor region (32); the sample (4) further includes a third region (43) of the sample, and the third region (43) of the sample surrounds the sample The second zone (42); and the third zone (43) of the sample is in contact with the third zone (33) of the semiconducting body.
  11. 一种半导电体电荷发射测试方法在电缆材料测试领域中的运用。A semi-conductor charge emission test method is used in the field of cable material testing.
  12. 一种半导电体电荷发射测试装置在电缆材料测试领域中的运用。 A semiconducting charge emission test device is used in the field of cable material testing.
PCT/CN2017/101514 2017-09-12 2017-09-13 Semiconductor charge emission test method and apparatus WO2019051659A1 (en)

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CN201721162336.3U CN207336703U (en) 2017-09-12 2017-09-12 Semiconductor charge emission test device

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