WO2019047369A1 - 阵列基板及其制作方法 - Google Patents

阵列基板及其制作方法 Download PDF

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Publication number
WO2019047369A1
WO2019047369A1 PCT/CN2017/111071 CN2017111071W WO2019047369A1 WO 2019047369 A1 WO2019047369 A1 WO 2019047369A1 CN 2017111071 W CN2017111071 W CN 2017111071W WO 2019047369 A1 WO2019047369 A1 WO 2019047369A1
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Prior art keywords
layer
black matrix
groove
pad portion
color resist
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PCT/CN2017/111071
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English (en)
French (fr)
Inventor
曹武
柳铭岗
邓竹明
林永伦
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US15/578,253 priority Critical patent/US10330997B2/en
Publication of WO2019047369A1 publication Critical patent/WO2019047369A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a method of fabricating the same.
  • Liquid crystal display is the most widely used display product on the market. Its production process technology is very mature, its product yield is high, its production cost is relatively low, and its market acceptance is high.
  • a liquid crystal display panel is composed of a color filter (CF) substrate, an array (Array) substrate, a liquid crystal sandwiched between the color filter substrate and the array substrate, and a sealant (Sealant), wherein the CF substrate mainly includes a color filter layer that forms colored light through a color resistive unit (R/G/B), a black matrix (BM) for preventing light leakage at the edge of the pixel, and a spacer for maintaining the thickness of the case (Photo Spacer, PS), in a large-size liquid crystal display panel, generally more than two types of spacers are used, such as a main spacer and a secondary spacer (Sub PS) having different heights on a CF substrate. Play a multi-stage buffer to prevent various Mura or bad occurrences.
  • the COA (Color Filter on Array) technology is a technique of preparing a color filter layer on an array substrate. Since the display panel of the COA structure does not have the alignment problem between the color filter substrate and the array substrate, the difficulty of the process of the box in the preparation process of the display panel can be reduced, and the error in the box can be avoided, so the black matrix can be designed as a narrow line width. Increases the aperture ratio. But the pursuit of better viewing effects such as curved displays, and lower cost display panels have become a constant research topic for technology developers.
  • Black Photo Spacer (BPS) material is a new type of material, which has the characteristics of the spacer material in the traditional technology, such as excellent elastic recovery force and low pollution to liquid crystal, etc.
  • a higher optical density (OD) value can act as a shading effect to achieve a black matrix.
  • a new type of BM-Less technology is a technology based on COA technology that combines BM and PS into the same BPS material and is completed on the same process and designed on the Array substrate.
  • the black matrix and the main The spacer, the auxiliary spacer, and the color filter are all designed on the side of the array substrate, so as to avoid not only the error in the group precision due to the accuracy of the group, but also the translation caused by the bending of the panel in the curved display technology. Exposure; more importantly, saving one material and process, shortening tact time and reducing product cost.
  • the prior art also covers the color resist layer of the COA type array substrate with an organic flat layer, and then Forming a BPS layer including a main spacer, an auxiliary auxiliary spacer, and a black matrix on the organic flat layer, and at the same time ensuring a gap between the main spacer, the auxiliary auxiliary spacer, and the black matrix, and ensuring the main
  • the height of the spacer and the auxiliary spacer, the thickness of the BPS layer is usually thick, and after forming the black matrix with the organic flat layer, it is easy to cause the black matrix to protrude too much in the pixel area between the sub-pixels. Barriers are formed to hinder the flow of the liquid crystal, causing poor display.
  • Another object of the present invention is to provide a method for fabricating an array substrate, which can reduce the extent of the black matrix protruding from the pixel region, ensure the liquidity of the liquid crystal, and avoid display defects.
  • the present invention provides an array substrate comprising: a base substrate, a TFT layer disposed on the base substrate, a protective layer covering the base substrate and the TFT layer, and the protection layer a color resist layer on the layer, an organic flat layer covering the color resist layer and the protective layer, and a BPS light shielding layer disposed on the organic flat layer;
  • the BPS light shielding layer includes: a black matrix, and a main spacer and an auxiliary spacer disposed on the black matrix; the organic flat layer is formed with a first recess in a region corresponding to at least a portion of the black matrix, The black matrix fills the first groove.
  • the color resist layer is formed with a second groove in a region corresponding to the first groove, and the black matrix further fills the second groove.
  • the TFT layer includes: a plurality of scan lines arranged in parallel, a plurality of parallel spaced apart data lines perpendicular to the scan lines, and a plurality of array-arranged TFTs.
  • the first groove is formed above the data line, above the scan line, or above the data line and the scan line.
  • the color resist layer has a first pad portion and a second pad portion, the first pad portion has a thickness greater than the second pad portion, and the main spacer and the auxiliary spacer are respectively located correspondingly Above the first pad portion and the second pad portion.
  • the invention also provides a method for fabricating an array substrate, comprising the following steps:
  • Step S1 providing a substrate, and forming a TFT layer on the substrate;
  • Step S2 covering the base substrate and the TFT layer with a protective layer; forming a color resist layer on the protective layer;
  • Step S3 forming an organic thin film on the protective layer, and patterning the organic thin film through a mask process to obtain an organic flat layer, and a first recess formed in the organic flat layer;
  • Step S4 coating a BPS material on the organic flat layer, and patterning the BPS material to obtain a black matrix, and a main spacer and an auxiliary spacer disposed on the black matrix, at least partially A region where the black matrix is located corresponds to the first groove and fills the first groove.
  • the step S2 further includes: forming a second groove in the color resist layer, wherein the first groove is formed in a region corresponding to the second groove in the step S3.
  • the TFT layer described in the step S1 includes: a plurality of parallel-arranged scan lines, a plurality of parallel-arranged data lines perpendicular to the scan lines, and a plurality of array-arranged TFTs.
  • the first groove is formed above the data line, above the scan line, or above the data line and the scan line.
  • the color resist layer has a first pad portion and a second pad portion, the first pad portion has a thickness greater than the second pad portion, and the main spacer and the auxiliary spacer are respectively located correspondingly Above the first pad portion and the second pad portion.
  • the present invention also provides an array substrate comprising: a base substrate, a TFT layer disposed on the base substrate, a protective layer covering the base substrate and the TFT layer, and a color resistance disposed on the protective layer a layer, an organic flat layer covering the color resist layer and the protective layer, and a BPS light shielding layer disposed on the organic flat layer;
  • the BPS light shielding layer includes: a black matrix, and a main spacer and an auxiliary spacer disposed on the black matrix; the organic flat layer is formed with a first recess in a region corresponding to at least a portion of the black matrix, The black matrix fills the first groove;
  • the color resist layer is formed with a second groove in a region corresponding to the first groove, and the black matrix further fills the second groove;
  • the TFT layer includes: a plurality of parallel spaced scan lines, a plurality of parallel spaced apart data lines perpendicular to the scan lines, and a plurality of arrays of TFTs;
  • the first groove is formed above the data line, or above the scan line, or above the data line and the scan line;
  • the color resist layer has a first pad portion and a second pad portion, the first pad portion has a thickness greater than the second pad portion, and the main spacer and the auxiliary spacer respectively Correspondingly located above the first pad portion and the second pad portion.
  • the present invention provides an array substrate including: a substrate substrate, a TFT layer disposed on the substrate substrate, and a cover layer covering the TFT substrate a protective layer, a color resist layer disposed on the protective layer, an organic flat layer covering the color resist layer and the protective layer, and a BPS light shielding layer disposed on the organic flat layer; the BPS light shielding layer
  • the method includes: a black matrix, and a main spacer and an auxiliary spacer disposed on the black matrix; the organic flat layer is formed with a first groove in a region corresponding to at least a portion of the black matrix, and the black matrix is filled
  • the first groove can reduce the degree of the black matrix protruding from the pixel region by forming a first groove on the organic flat layer and filling the black matrix into the first groove
  • the black matrix forms a retaining wall between each sub-pixel, which affects the fluidity of the liquid crystal, and ensures the quality of the liquid crystal process and the effect of the device.
  • the invention also provides a method for
  • FIG. 1 is a cross-sectional view of a first embodiment of an array substrate of the present invention in a horizontal direction of a TFT region;
  • FIG. 2 is a cross-sectional view of the first embodiment of the array substrate of the present invention in a horizontal direction in a data line region;
  • FIG. 3 is a top plan view of an array substrate of the present invention.
  • FIG. 4 is a cross-sectional view of the second embodiment of the array substrate of the present invention in a horizontal direction of the TFT region;
  • Figure 5 is a cross-sectional view of the second embodiment of the array substrate of the present invention in the horizontal direction of the data line region;
  • FIG. 6 is a flow chart of a method of fabricating an array substrate of the present invention.
  • a first embodiment of the present invention provides an array substrate, including: a substrate substrate 10, a TFT layer 20 disposed on the substrate substrate 10, and the substrate substrate 10 and a protective layer 30 of the TFT layer 20, a color resist layer 40 disposed on the protective layer 30, an organic flat layer 50 overlying the color resist layer 40 and the protective layer 30, and an organic flat layer 50 disposed on the organic flat layer 50 Upper BPS light shielding layer 60;
  • the BPS light shielding layer 60 includes: a black matrix 61, and a main spacer 62 and an auxiliary spacer 63 disposed on the black matrix 61; the organic flat layer 50 is in an area corresponding to at least a portion of the black matrix 61 A first groove 51 is formed, and the black matrix 61 fills the first groove 51.
  • the TFT layer 20 includes: a plurality of scan lines 21 arranged in parallel, a plurality of data lines 22 arranged in parallel with the scan lines 21, and a plurality of arrays arranged in parallel.
  • the TFT 23 is further disposed between the TFT layer 20 and the organic flat layer 50, and the pixel electrode 24 is electrically connected to the drain of the TFT 23 through a connection via.
  • the color resist layer 40 has a first pad portion 41 and a second pad portion 42, the thickness of the first pad portion 41 Larger than the second pad portion 42, the main spacer 62 and the auxiliary spacer 63 are respectively located above the first pad portion 41 and the second pad portion 42.
  • the black photoresist material is patterned by a common photomask having only two transmittances of complete light transmission and complete light transmission, and the black matrix 61, the main spacer 62, and the auxiliary spacer 63 are removed.
  • the BPS layer 60 can be formed from a black photoresist material.
  • the height difference between the main spacer 62 and the auxiliary spacer 63 is 0.2-1.0 um.
  • the first pad portion 41 is located above the TFT 23, and the second pad portion 42 is located above the scan line 21.
  • the first pad portion 41 may be formed by stacking two adjacent color resistors 411 and color resistors 412.
  • the first groove 51 is formed above the data line 22, and the first groove 51 completely covers the data line 22, such that after the black matrix 61 fills the first recess 51, the black matrix 61 can completely block the data line 22.
  • the color resist layer 40 is formed with a second groove 52 in a region corresponding to the first groove 51, and the black matrix 61
  • the second recess 52 is also filled, and by forming the second recess 52 on the color resist layer 40, the height of the black matrix 61 can be further reduced, and the fluidity of the liquid crystal can be improved.
  • the first pad portion 41 and the second pad portion 42 may also have a color resistance of the same color through a halftone mask. Patterning is formed, the halftone mask having different transmittances at positions corresponding to the first pad portion 41 and the second pad portion 42, thereby causing the first pad portion 41 and the first The two pad portions 42 have different thicknesses.
  • the first grooves 51 are formed on the data.
  • the upper portion of the line 22 is not limited thereto.
  • the first recess 51 may be formed above the scan line 21 or simultaneously formed on the data line. 22 and above the scanning line 21, as long as the first groove 51 is located below the black matrix 61, the black matrix 61 can be caused to fall into the first groove 51, thereby reducing the black matrix 61.
  • the purpose of the height can be.
  • the present invention provides a method for fabricating an array substrate, comprising the following steps:
  • step S1 a base substrate 10 is provided, and a TFT layer 20 is formed on the base substrate 10.
  • the TFT layer 20 includes: a plurality of scan lines 21 arranged in parallel, a plurality of data lines 22 arranged in parallel with the scan lines 21, and a plurality of arrays arranged in parallel. TFT 23.
  • the step S1 specifically includes: depositing a first metal layer on the base substrate 10, and patterning the first metal layer to obtain a scan line 21 and a TFT electrically connected to the scan line 21 a gate of 23, then depositing a gate insulating layer, then forming an active layer over the gate on the gate insulating layer, and then forming a second metal on the gate insulating layer and the active layer And patterning the second metal layer to obtain a source and a drain of the TFT 23 in contact with both ends of the active layer, and a data line electrically connected to the source;
  • Step S2 covering the base substrate 10 and the TFT layer 20 with a protective layer 30; forming a color resist layer 40 on the protective layer 30;
  • the color resist layer 40 includes red, green, and blue photoresists.
  • Step S3 forming an organic thin film on the color resist layer 40, and by patterning the organic thin film to obtain an organic flat layer 50, and a first recess 51 formed in the organic flat layer 50;
  • the organic flat layer 50 is patterned by the mask process in the step S3.
  • the first groove 51 is obtained by patterning a portion of the organic film of the corresponding region, that is, the first groove 51 does not expose the protective layer 30, and the height of the black matrix 61 in the first groove 51 of the subsequent process can be effectively reduced.
  • the first recess 51 is obtained by patterning all the organic thin films of the corresponding regions, that is, the first recess 51 exposes the protective layer 30, which can further reduce the height of the black matrix 61 in the first recess 51 of the subsequent process.
  • the first groove 51 is obtained by etching an organic film.
  • Step S4 coating a BPS material on the organic flat layer 50, and patterning the BPS material to obtain a black matrix 61, and a main spacer 62 and an auxiliary spacer disposed on the black matrix 61.
  • the region 63, at least a portion of the black matrix 61, corresponds to the first recess 51 and fills the first recess 51.
  • the color resist layer 40 has a first pad portion 41 and a second pad portion 42, the thickness of the first pad portion 41. Greater than the second The pad portion 42, the main spacer 62 and the auxiliary spacer 63 are respectively located above the first pad portion 41 and the second pad portion 42, and the step S4 is only completely transparent through one
  • the black photoresist material is patterned by a common photomask of light and completely opaque transmittance, and the black photoresist material except the black matrix 61, the main spacer 62, and the auxiliary spacer 63 can be removed.
  • the BPS layer 60 is formed.
  • the height difference between the main spacer 62 and the auxiliary spacer 63 is 0.2-1.0 um.
  • the first pad portion 41 is located above the TFT 23, and the second pad portion 42 is located above the scan line 21.
  • the first pad portion 41 may be formed by stacking two adjacent color resistors 411 and color resistors 412.
  • the first groove 51 is formed above the data line 22, and the first groove 51 completely covers the data line 22, such that after the black matrix 61 fills the first recess 51, the black matrix 61 can completely block the data line 22.
  • the color resist layer 40 is further formed with a second groove 52 in a region corresponding to the first groove 51, the black matrix The second recess 52 is also filled.
  • the second recess 52 is formed on the color resist layer 40, the height of the black matrix 61 can be further reduced, and the fluidity of the liquid crystal can be improved.
  • the first pad portion 41 and the second pad portion 42 may also have a color resistance of the same color through a halftone mask. Patterning is formed, the halftone mask having different transmittances at positions corresponding to the first pad portion 41 and the second pad portion 42, thereby causing the first pad portion 41 and the first The two pad portions 42 have different thicknesses.
  • the first grooves 51 are formed above the data line 22, but the invention is not limited thereto.
  • the A groove 51 may also be formed above the scan line 21 or simultaneously above the data line 22 and the scan line 21, as long as the first groove 51 is located corresponding to the black matrix 61.
  • the black matrix 61 can be dropped into the first recess 51 for the purpose of lowering the height of the black matrix 61.
  • the present invention provides an array substrate including: a base substrate, a TFT layer disposed on the base substrate, a protective layer covering the base substrate and the TFT layer, and disposed at the a color resist layer on the protective layer, an organic flat layer covering the color resist layer and the protective layer, and a BPS light shielding layer provided on the organic flat layer;
  • the BPS light shielding layer includes: a black matrix, and a main spacer and an auxiliary spacer disposed on the black matrix;
  • the organic flat layer is formed with a first recess in a region corresponding to at least a portion of the black matrix, the black matrix filling the first a groove, by forming a first groove on the organic flat layer and filling the black matrix into the first groove, the degree of the black matrix protruding from the pixel region can be reduced, and the black matrix is avoided
  • a retaining wall is formed between each sub-pixel, which affects the fluidity of the liquid crystal, and ensures the quality of the liquid crystal process and the display effect of the device.

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Abstract

一种阵列基板及其制作方法。阵列基板包括：衬底基板（10）、设于衬底基板（10）上的TFT层（20）、覆盖衬底基板（10）及TFT层（20）的保护层（30）、设于保护层（30）上的色阻层（40）、覆盖于色阻层（40）和保护层（30）上的有机平坦层（50）、及设于有机平坦层（50）上的BPS遮光层（60）；BPS遮光层（60）包括：黑色矩阵（61）、以及设于黑色矩阵（61）上的主隔垫物（62）与辅助隔垫物（63）；有机平坦层（50）在与至少部分黑色矩阵（61）对应的区域形成有第一凹槽（51），黑色矩阵（61）填充第一凹槽（51），通过在有机平坦层（50）上形成第一凹槽（51），并使得黑色矩阵（61）填入第一凹槽（51）中，能够降低黑色矩阵（61）的凸出像素区的程度，避免黑色矩阵（61）在各个子像素之间形成挡墙，影响液晶的流动性，保证液晶成盒制程质量和器件的显示效果。

Description

阵列基板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制作方法。
背景技术
液晶显示器(Liquid Crystal Display，LCD)是目前市场上应用最为广泛的显示产品，其生产工艺技术十分成熟，产品良率高，生产成本相对较低，市场接受度高。
现有市场上的液晶显示器大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组。通常液晶显示面板由彩膜(Color Filter，CF)基板、阵列(Array)基板、夹于彩膜基板与阵列基板之间的液晶及密封框胶(Sealant)组成，其中，CF基板主要包括用于通过色阻单元(R/G/B)形成有色光的彩色滤光层、用于防止像素边缘漏光的黑色矩阵(Black Matrix，BM)、以及用于维持盒厚的隔垫物(Photo Spacer，PS)，在大尺寸液晶显示面板中，通常会使用两种类型以上的隔垫物，如在CF基板上设置高度不同的主隔垫物(Main PS)和辅助隔垫物(Sub PS)，起到多级缓冲的作用，以防止各种Mura或者不良的发生。
COA(Color Filter on Array)技术是将彩色滤光层制备在阵列基板上的技术。由于COA结构的显示面板不存在彩膜基板与阵列基板的对位问题，因此可以降低显示面板制备过程中对盒制程的难度，避免了对盒时的误差，因此黑色矩阵可以设计为窄线宽，提高了开口率。但是追求更好观影效果如曲面显示器，并且更低成本的显示面板已成为技术开发人员持之以恒的研究课题。黑色隔垫物(Black Photo Spacer，BPS)材料是一种新型材料，它既具有传统技术中隔垫物材料的特性，如较优秀的弹性回复力及对液晶较低的污染等，而且还具有较高的光学密度(optical density，OD)值，可以起到遮光作用而达到黑色矩阵的效果。一种新型的BM-Less技术是基于COA技术上将BM与PS集合于同一BPS材料且同一制程完成并设计在Array基板上的一种技术，与传统的液晶显示技术比较，将黑色矩阵、主隔垫物、辅助隔垫物、及彩色滤光膜全部设计在阵列基板侧，这样不仅可以避免对组制程中由于对组精度的误差，或者曲面显示技术中由于面板弯曲造成的平移带来的露光；更重要的是节省一道材料及制程，缩短生产时间(tact time)，降低了产品成本。
与此同时，为了解决改善COA型阵列基板的地形平坦性，同时减少气泡(Bubble)，现有技术还会在COA型阵列基板的色阻层上覆盖一层有机平坦层，然后再在所述有机平坦层上形成包括主隔垫物、辅助副隔垫物、及黑色矩阵的BPS层，同时为了能够形成主隔垫物、辅助副隔垫物、及黑色矩阵之间的断差且保证主隔垫物和辅助隔垫物的高度，BPS层的厚度通常较厚，在具有有机平坦层的情况下其形成黑色矩阵后，容易造成黑色矩阵凸出像素区过多，在各个子像素之间形成壁垒，阻碍液晶的流动，引起显示不良。
发明内容
本发明的目的在于提供一种阵列基板，能够减小黑色矩阵凸出像素区的程度，保证液晶的流动性，避免显示不良。
本发明的目的还在于提供一种阵列基板的制作方法，能够减小黑色矩阵凸出像素区的程度，保证液晶的流动性，避免显示不良。
为实现上述目的，本发明提供了一种阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；
所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽。
所述色阻层在与所述第一凹槽对应的区域形成有第二凹槽，所述黑色矩阵还填充所述第二凹槽。
所述TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT。
所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方。
所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
本发明还提供一种阵列基板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板，在衬底基板上形成TFT层；
步骤S2、在衬底基板及TFT层上覆盖保护层；在所述保护层上形成色阻层；
步骤S3、在所述保护层上形成一层有机薄膜，并通过一道光罩制程图案化所述有机薄膜，得到有机平坦层、及形成于所述有机平坦层中的第一凹槽；
步骤S4、在所述有机平坦层上涂布BPS材料，并对所述BPS材料进行图案化，得到黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物，至少部分黑色矩阵所在的区域与所述第一凹槽相对应并填充所述第一凹槽。
所述步骤S2还包括：在所述色阻层中形成第二凹槽，所述步骤S3中所述第一凹槽形成在与所述第二凹槽对应的区域。
所述步骤S1中所述的TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT。
所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方。
所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
本发明还提供一种阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；
所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽；
其中，所述色阻层在与所述第一凹槽对应的区域形成有第二凹槽，所述黑色矩阵还填充所述第二凹槽；
其中，所述TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT；
其中，所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方；
其中，所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
本发明的有益效果：本发明提供一种阵列基板，该阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保 护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽，通过在所述有机平坦层上形成第一凹槽，并使得所述黑色矩阵填入所述第一凹槽中，能够减小黑色矩阵凸出像素区的程度，避免黑色矩阵在各个子像素之间形成挡墙，影响液晶的流动性，保证液晶成盒制程质量和器件的效果。本发明还提供一种阵列基板的制作方法，保证液晶的流动性，避免显示不良。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的阵列基板的第一实施例在TFT区域沿水平线方向的剖面图；
图2为本发明的阵列基板的第一实施例在数据线区域沿水平方向的剖面图；
图3为本发明的阵列基板的俯视图；
图4为本发明的阵列基板的第二实施例在TFT区域沿水平线方向的剖面图；
图5为本发明的阵列基板的第二实施例在数据线区域沿水平方向的剖面图；
图6为本发明的阵列基板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图3，本发明的第一实施例提供一种阵列基板，包括：衬底基板10、设于所述衬底基板10上的TFT层20、覆盖所述衬底基板10及TFT层20的保护层30、设于所述保护层30上的色阻层40、覆盖于所述色阻层40和保护层30上的有机平坦层50、及设于所述有机平坦层50上的BPS遮光层60；
所述BPS遮光层60包括：黑色矩阵61、以及设于所述黑色矩阵61上的主隔垫物62与辅助隔垫物63；所述有机平坦层50在与至少部分黑色矩阵61对应的区域形成有第一凹槽51，所述黑色矩阵61填充所述第一凹槽51。
具体地，如图3所示，所述TFT层20包括：多条平行间隔排列的扫描线21、多条平行间隔排列的与所述扫描线21垂直的数据线22、以及多个阵列排布的TFT 23，并且所述TFT层20与有机平坦层50之间还设有像素电极24，所述像素电极24通过一连接过孔与所述TFT 23的漏极电性连接。
进一步地，如图1所示，在本发明的第一实施例中，所述色阻层40具有第一衬垫部41和第二衬垫部42，所述第一衬垫部41的厚度大于所述第二衬垫部42，所述主隔垫物62与辅助隔垫物63分别对应位于所述第一衬垫部41和第二衬垫部42的上方，制作时，所述可通过一道仅具有完全透光和完全不透光两种透过率的普通光罩对黑色光阻材料进行图案化，去除除黑色矩阵61、主隔垫物62、及辅助隔垫物63以外的黑色光阻材料即可形成所述BPS层60。
优选地，所述主隔垫物62与辅助隔垫物63的高度断差为0.2-1.0um。
优选地，所述第一衬垫部41位于所述TFT 23的上方，所述第二衬垫部42位于所述扫描线21的上方。
优选地，所述第一衬垫部41可以由相邻的两个不同颜色的色阻411和色阻412堆叠而成。
进一步地，如图2所示，在本发明的第一实施例中，所述第一凹槽51形成于所述数据线22的上方，且所述第一凹槽51完全覆盖所述数据线22，从而在所述黑色矩阵61填充所述第一凹槽51后，所述黑色矩阵61能够完全遮挡住所述数据线22。
具体地，如图4所示，在本发明的第二实施例中，所述色阻层40在与所述第一凹槽51对应的区域形成有第二凹槽52，所述黑色矩阵61还填充所述第二凹槽52，通过在所述色阻层40上形成第二凹槽52，能够进一步降低黑色矩阵61的高度，提升液晶的流动性。
具体地，如图5所示，在本发明的第二实施例中，所述第一衬垫部41和第二衬垫部42还可以通过一道半色调光罩对一相同的颜色的色阻进行图案化形成，所述半色调光罩在与所述第一衬垫部41和第二衬垫部42对应的位置具有不同的透光率，从而使得所述第一衬垫部41和第二衬垫部42具有不同的厚度。
应当理解的是，在上述实施例中所述第一凹槽51虽均形成于所述数据 线22的上方，但本发明对此并不限制，在本发明的其他实施例中，所述第一凹槽51也可以形成于所述扫描线21的上方，或同时形成于所述数据线22和扫描线21的上方，实际上只要所述是第一凹槽51对应位于所述黑色矩阵61的下方，能够使得黑色矩阵61落入所述第一凹槽51中，达到降低黑色矩阵61的高度的目的即可。
请参阅图6，本发明提供一种阵列基板的制作方法，包括如下步骤：
步骤S1、提供一衬底基板10，在衬底基板10上形成TFT层20。
具体地，如图3所示，所述TFT层20包括：多条平行间隔排列的扫描线21、多条平行间隔排列的与所述扫描线21垂直的数据线22、以及多个阵列排布的TFT 23。
进一步地，所述步骤S1具体包括：在所述衬底基板10上沉积第一金属层，对所述第一金属层进行图案化得到扫描线21和与所述扫描线21电性连接的TFT 23的栅极，然后沉积栅极绝缘层，接着在所述栅极绝缘层上形成位于所述栅极上方的有源层，然后在所述栅极绝缘层和有源层上形成第二金属层并对第二金属层进行图案化，得到与所述有源层的两端接触的TFT 23的源极和漏极、以及源极电性连接的数据线；
步骤S2、在衬底基板10及TFT层20上覆盖保护层30；在所述保护层30上形成色阻层40；
具体地，所述色阻层40包括红色、绿色及蓝色光阻。
步骤S3、在所述色阻层40上形成一层有机薄膜，并通过图案化所述有机薄膜得到有机平坦层50、及形成于所述有机平坦层50中的第一凹槽51；
具体地，所述步骤S3中通过一道光罩制程对所述有机平坦层50进行图案化。
具体地，所述第一凹槽51通过图案化对应区域的部分有机薄膜得到，即第一凹槽51不露出保护层30，可有效降低后续制程第一凹槽51中的黑色矩阵61的高度；所述第一凹槽51通过图案化对应区域的全部有机薄膜得到，即第一凹槽51露出保护层30，可进一步降低后续制程第一凹槽51中的黑色矩阵61的高度。优选地，通过蚀刻有机薄膜得到所述第一凹槽51。
步骤S4、在所述有机平坦层50上涂布BPS材料，并对所述BPS材料进行图案化，得到黑色矩阵61、以及设于所述黑色矩阵61上的主隔垫物62与辅助隔垫物63，至少部分黑色矩阵61所在的区域与所述第一凹槽51相对应并填充所述第一凹槽51。
具体地，如图1所示，在本发明的第一实施例中，所述色阻层40具有第一衬垫部41和第二衬垫部42，所述第一衬垫部41的厚度大于所述第二 衬垫部42，所述主隔垫物62与辅助隔垫物63分别对应位于所述第一衬垫部41和第二衬垫部42的上方，所述步骤S4中通过一道仅具有完全透光和完全不透光两种透过率的普通光罩对黑色光阻材料进行图案化，去除除黑色矩阵61、主隔垫物62、及辅助隔垫物63以外的黑色光阻材料即可形成所述BPS层60。
优选地，所述主隔垫物62与辅助隔垫物63的高度断差为0.2-1.0um。
优选地，所述第一衬垫部41位于所述TFT 23的上方，所述第二衬垫部42位于所述扫描线21的上方。优选地，所述第一衬垫部41可以由相邻的两个不同颜色的色阻411和色阻412堆叠而成。
进一步地，如图2所示，在本发明的第一实施例中，所述第一凹槽51形成于所述数据线22的上方，且所述第一凹槽51完全覆盖所述数据线22，从而在所述黑色矩阵61填充所述第一凹槽51后，所述黑色矩阵61能够完全遮挡住所述数据线22。
具体地，如图4所示，在本发明的第二实施例中，所述色阻层40在与所述第一凹槽51对应的区域还形成有第二凹槽52，所述黑色矩阵61还填充所述第二凹槽52，通过在所述色阻层40上形成第二凹槽52，能够进一步降低黑色矩阵61的高度，提升液晶的流动性。
具体地，如图5所示，在本发明的第二实施例中，所述第一衬垫部41和第二衬垫部42还可以通过一道半色调光罩对一相同的颜色的色阻进行图案化形成，所述半色调光罩在与所述第一衬垫部41和第二衬垫部42对应的位置具有不同的透光率，从而使得所述第一衬垫部41和第二衬垫部42具有不同的厚度。
应当理解的是，在上述实施例中所述第一凹槽51虽均形成于所述数据线22的上方，但本发明对此并不限制，在本发明的其他实施例中，所述第一凹槽51也可以形成于所述扫描线21的上方，或同时形成于所述数据线22和扫描线21的上方，实际上只要所述是第一凹槽51对应位于所述黑色矩阵61的下方，能够使得黑色矩阵61落入所述第一凹槽51中，达到降低黑色矩阵61的高度的目的即可。
综上所述，本发明提供一种阵列基板，该阵列基板包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第 一凹槽，通过在所述有机平坦层上形成第一凹槽，并使得所述黑色矩阵填入所述第一凹槽中，能够减小黑色矩阵凸出像素区的程度，避免黑色矩阵在各个子像素之间形成挡墙，影响液晶的流动性，保证液晶成盒制程质量和器件的显示效果。本发明还提供一种阵列基板的制作方法，保证液晶的流动性，避免显示不良。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；
    所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽。
  2. 如权利要求1所述的阵列基板，其中，所述色阻层在与所述第一凹槽对应的区域形成有第二凹槽，所述黑色矩阵还填充所述第二凹槽。
  3. 如权利要求1所述的阵列基板，其中，所述TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT。
  4. 如权利要求3所述的阵列基板，其中，所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方。
  5. 如权利要求1所述的阵列基板，其中，所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
  6. 一种阵列基板的制作方法，包括如下步骤：
    步骤S1、提供一衬底基板，在衬底基板上形成TFT层；
    步骤S2、在衬底基板及TFT层上覆盖保护层，在所述保护层上形成色阻层；
    步骤S3、在所述色阻层上形成一层有机薄膜，并通过一道光罩制程图案化所述有机薄膜，得到有机平坦层、及形成于所述有机平坦层中的第一凹槽；
    步骤S4、在所述有机平坦层上涂布BPS材料，并对所述BPS材料进行图案化，得到黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物，至少部分黑色矩阵所在的区域与所述第一凹槽相对应并填充所述第一凹槽。
  7. 如权利要求6所述的阵列基板的制作方法，其中，所述步骤S2还包括：在所述色阻层中形成第二凹槽，所述步骤S3中所述第一凹槽形成在与所述第二凹槽对应的区域。
  8. 如权利要求6所述的阵列基板的制作方法，其中，所述步骤S1中所述的TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT。
  9. 如权利要求8所述的阵列基板的制作方法，其中，所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方。
  10. 如权利要求6所述的阵列基板的制作方法，其中，所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
  11. 一种阵列基板，包括：衬底基板、设于所述衬底基板上的TFT层、覆盖所述衬底基板及TFT层的保护层、设于所述保护层上的色阻层、覆盖于所述色阻层和保护层上的有机平坦层、及设于所述有机平坦层上的BPS遮光层；
    所述BPS遮光层包括：黑色矩阵、以及设于所述黑色矩阵上的主隔垫物与辅助隔垫物；所述有机平坦层在与至少部分黑色矩阵对应的区域形成有第一凹槽，所述黑色矩阵填充所述第一凹槽；
    其中，所述色阻层在与所述第一凹槽对应的区域形成有第二凹槽，所述黑色矩阵还填充所述第二凹槽；
    其中，所述TFT层包括：多条平行间隔排列的扫描线、多条平行间隔排列的与所述扫描线垂直的数据线、以及多个阵列排布的TFT；
    其中，所述第一凹槽形成于所述数据线的上方、或所述扫描线的上方、或所述数据线和扫描线的上方；
    其中，所述色阻层具有第一衬垫部和第二衬垫部，所述第一衬垫部的厚度大于所述第二衬垫部，所述主隔垫物与辅助隔垫物分别对应位于所述第一衬垫部和第二衬垫部的上方。
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107505780A (zh) * 2017-09-26 2017-12-22 深圳市华星光电半导体显示技术有限公司 Bps型阵列基板及其制作方法
US10782571B2 (en) 2017-12-29 2020-09-22 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. COA-type array substrate
CN108181768B (zh) * 2017-12-29 2020-07-28 深圳市华星光电半导体显示技术有限公司 Coa型阵列基板
CN108051939A (zh) * 2017-12-29 2018-05-18 深圳市华星光电技术有限公司 液晶面板及其制作方法
CN108535909A (zh) * 2018-04-17 2018-09-14 深圳市华星光电技术有限公司 Bps型阵列基板的制作方法及bps型阵列基板
CN108681142A (zh) * 2018-05-22 2018-10-19 惠科股份有限公司 一种显示面板的制作方法
CN109116617B (zh) * 2018-09-04 2021-10-26 Tcl华星光电技术有限公司 挡墙结构、彩膜阵列基板和液晶显示面板
CN109256052B (zh) 2018-09-21 2020-06-02 京东方科技集团股份有限公司 电子设备、显示面板、驱动背板及其制造方法
CN109901335B (zh) * 2019-03-27 2023-08-25 京东方科技集团股份有限公司 一种显示面板及显示装置
CN110456546A (zh) * 2019-07-31 2019-11-15 深圳市华星光电技术有限公司 显示面板及其制备方法
CN110908170B (zh) * 2019-11-14 2021-11-02 Tcl华星光电技术有限公司 显示面板、显示基板及其制作方法
CN115016164A (zh) * 2022-05-25 2022-09-06 苏州华星光电技术有限公司 显示面板及其制备方法、显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040100596A1 (en) * 2002-11-26 2004-05-27 Hannstar Display Corporation Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate
CN104965366A (zh) * 2015-07-15 2015-10-07 深圳市华星光电技术有限公司 阵列彩膜集成式液晶显示面板的制作方法及其结构
CN105974636A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN105974651A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN106154630A (zh) * 2016-08-31 2016-11-23 深圳市华星光电技术有限公司 一种coa型液晶面板及制作方法
US20170176828A1 (en) * 2015-12-17 2017-06-22 a.u. Vista Inc. Liquid crystal display having holding member and method of fabricating same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101374887B1 (ko) * 2006-05-16 2014-03-13 삼성디스플레이 주식회사 표시 패널
KR20160003357A (ko) * 2014-06-30 2016-01-11 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
KR102389963B1 (ko) * 2015-08-11 2022-04-25 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN106707601B (zh) * 2017-01-18 2019-11-22 昆山龙腾光电有限公司 彩膜基板、彩膜基板制作方法及显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040100596A1 (en) * 2002-11-26 2004-05-27 Hannstar Display Corporation Method of utilizing dual-layer photoresist to form black matrixes and spacers on a control circuit substrate
CN104965366A (zh) * 2015-07-15 2015-10-07 深圳市华星光电技术有限公司 阵列彩膜集成式液晶显示面板的制作方法及其结构
US20170176828A1 (en) * 2015-12-17 2017-06-22 a.u. Vista Inc. Liquid crystal display having holding member and method of fabricating same
CN105974636A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN105974651A (zh) * 2016-07-18 2016-09-28 深圳市华星光电技术有限公司 液晶显示面板的制作方法
CN106154630A (zh) * 2016-08-31 2016-11-23 深圳市华星光电技术有限公司 一种coa型液晶面板及制作方法

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