WO2019030865A1 - 研磨液及び研磨方法 - Google Patents
研磨液及び研磨方法 Download PDFInfo
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- WO2019030865A1 WO2019030865A1 PCT/JP2017/028956 JP2017028956W WO2019030865A1 WO 2019030865 A1 WO2019030865 A1 WO 2019030865A1 JP 2017028956 W JP2017028956 W JP 2017028956W WO 2019030865 A1 WO2019030865 A1 WO 2019030865A1
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- polishing
- polysilicon
- silicon nitride
- silicon dioxide
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Definitions
- the present invention relates to a polishing solution and a polishing method.
- the present invention relates to, for example, a polishing liquid and a polishing method that can be used for polishing in a wiring formation process of a semiconductor substrate or the like.
- CMP chemical mechanical polishing
- CMP has been applied to each process in semiconductor manufacturing, and one form thereof is, for example, application to a gate formation process in transistor fabrication.
- materials such as metals, silicon, silicon oxide, silicon nitride, polycrystalline silicon (polysilicon) may be polished. Depending on the transistor structure, it is required to control the polishing rate of each material.
- non-selective means that silicon nitride and polysilicon are not selectively polished to silicon dioxide, and the polishing rates of silicon nitride and polysilicon are the same as the polishing rate of silicon dioxide. Means to be.
- Ceria particles and silica particles are generally known as abrasives used when polishing silicon dioxide, silicon nitride and polysilicon.
- Patent Document 2 discloses that silicon dioxide, silicon nitride and polysilicon are simultaneously polished using a polishing solution containing colloidal ceria particles (ceria particles) and a quaternary methacryloyl alkyl ammonium polymer (cationic polymer). It is done.
- Patent Document 3 It is disclosed in the following Patent Document 3 that the polishing rate of silicon nitride is improved by using a silica particle having a negative zeta potential by immobilizing sulfonic acid on the surface of the abrasive grain.
- the polishing rate of silicon dioxide is excessively high relative to the polishing rate of silicon nitride and polysilicon because ceria is highly reactive with silicon dioxide, and both silicon nitride and polysilicon can be used. It is difficult to polish silicon nitride and polysilicon non-selectively to silicon dioxide while increasing the polishing rate.
- polishing rate of silicon nitride is improved when silica particles are used, the polishing rates of silicon dioxide, silicon nitride and polysilicon are controlled so that silicon nitride and polysilicon are not used relative to silicon dioxide. Selective polishing is difficult.
- the present invention is intended to solve the above-mentioned problems, and it is an object of the present invention to provide a polishing solution and a polishing method capable of non-selectively polishing silicon nitride and polysilicon with respect to silicon dioxide.
- the polishing liquid according to the present invention contains abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one selected from the group consisting of amino acids and amino acid derivatives, and the silanol group density of the abrasive grains is 6.5. Number / nm 2 or less, and the degree of association of the abrasive grains is 1.5 or more.
- the polishing solution according to the present invention can non-selectively polish silicon nitride and polysilicon with respect to silicon dioxide. According to the polishing liquid of the present invention, it is possible to polish while planarizing a surface to be polished containing silicon dioxide, silicon nitride and polysilicon.
- the abrasive preferably contains colloidal silica.
- the zeta potential of the abrasive grains is preferably positive.
- the pH of the polishing solution according to the present invention is preferably 2.0 to 5.0.
- the polishing liquid according to the present invention may be used to polish a surface to be polished containing silicon dioxide, silicon nitride and polysilicon.
- the ratio of the polishing rate of silicon nitride and polysilicon to the polishing rate of silicon dioxide is 0.80 to 1.20. Is preferably 0.80 or more and less than 1.20.
- a polishing method comprises the step of polishing a surface to be polished containing silicon dioxide, silicon nitride and polysilicon using the above-mentioned polishing liquid.
- silicon nitride and polysilicon can be polished nonselectively to silicon dioxide.
- the polishing rate of silicon dioxide is 1.00, 0.80 to 1.20 can be obtained as the polishing rates of silicon nitride and polysilicon.
- a numerical range indicated by using “to” indicates a range including numerical values described before and after “to” as the minimum value and the maximum value, respectively.
- the upper limit or the lower limit of the numerical range of one step can be arbitrarily combined with the upper limit or the lower limit of the numerical range of another step in the numerical range described stepwise in the present specification.
- the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
- “A or B” may contain either A or B, and may contain both.
- the materials exemplified herein can be used alone or in combination of two or more unless otherwise specified.
- the content of each component in the composition is the total amount of the plurality of substances present in the composition unless a plurality of substances corresponding to each component are present in the composition.
- the polishing liquid according to the present embodiment contains abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one amino acid component selected from the group consisting of amino acids and amino acid derivatives, and the silanol group density of the abrasive grains. Is 6.5 pieces / nm 2 or less, and the degree of association of the abrasive grains is 1.5 or more.
- the polishing liquid according to the present embodiment can be used as a CMP polishing liquid.
- the polishing liquid according to the present embodiment can be used to polish a surface to be polished including silicon dioxide and at least one selected from the group consisting of silicon nitride and polysilicon, and silicon dioxide and silicon nitride It can also be used to polish the surface to be polished containing polysilicon.
- silicon nitride and polysilicon can be nonselectively polished with respect to silicon dioxide.
- the reason why such an effect is expressed is not always clear, but the present inventors speculate as follows. That is, in the presence of the phosphonic acid compound having the specific molecular weight and the amino acid component, the phosphonic acid compound is easily coordinated to the silicon nitride surface, and the amino acid component is easily coordinated to the polysilicon surface. And the wettability of a to-be-polished surface changes because each compound coordinates, and the abrasive grain with low silanol group density tends to act on a to-be-polished surface.
- the polishing rate of silicon nitride and polysilicon is improved to the polishing rate equivalent to that of silicon dioxide.
- the polishing liquid according to the present embodiment contains abrasive grains.
- abrasive grains examples include silica, alumina, ceria and the like.
- the abrasive preferably contains silica, and more preferably contains colloidal silica, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the upper limit of the silanol group density of the abrasive grains is 6.5 / nm 2 or less from the viewpoint of non-selectively polishing silicon nitride and polysilicon with respect to silicon dioxide.
- the upper limit of the abrasive grains of the silanol group density is, the silicon nitride and polysilicon from the non-selective polishing easily viewpoint against silicon dioxide, preferably 5.0 pieces / nm 2 or less, 4.2 or / nm 2 or less Is more preferably 4.0 pcs / nm 2 or less, particularly preferably 3.0 pcs / nm 2 or less, particularly preferably 2.0 pcs / nm 2 or less, and most preferably 1.7 pcs / nm 2 or less.
- the lower limit of the abrasive grains of the silanol group density is, the silicon nitride and polysilicon from the non-selective polishing easily viewpoint against silicon dioxide, preferably 1.0 pieces / nm 2 or more, 1.1 or / nm 2 or more Is more preferably 1.2 pieces / nm 2 or more, particularly preferably 1.4 pieces / nm 2 or more, and most preferably 1.5 pieces / nm 2 or more.
- the silanol group density ( ⁇ [number / nm 2 ]) can be measured and calculated by the following titration.
- 15 g of particles (A [g]) are weighed and dispersed in an appropriate amount (100 ml or less) of water.
- the pH is adjusted to 3.0 to 3.5 with 0.1 mol / l hydrochloric acid.
- 30 g of sodium chloride is added, and then ultrapure water is further added to adjust the total amount to 150 g.
- the pH is adjusted to 4.0 with 0.1 mol / l sodium hydroxide solution to obtain a sample for titration.
- N A (unit: number / mol) represents the Avogadro's number
- S BET (unit: m 2 / g) represents the BET specific surface area of the particle, respectively. The method of measuring the BET specific surface area will be described later. ]
- the amount of silica particles is measured to be 15 g. Can be measured.
- a silica particle can be isolated and wash
- the lower limit of the degree of association (average secondary particle size / average primary particle size) of the abrasive grains is 1.5 or more from the viewpoint of non-selectively polishing silicon nitride and polysilicon with respect to silicon dioxide.
- the lower limit of the degree of association of the abrasive grains is preferably 1.7 or more, more preferably 1.9 or more, and 2.0 or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. Further preferred is 2.1 or more, and particularly preferred is 2.2 or more.
- the upper limit of the degree of association of the abrasive grains is preferably 3.0 or less, more preferably 2.5 or less, and 2.3 or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. More preferable.
- the upper limit of the average primary particle diameter of the abrasive grains is preferably 40 nm or less, more preferably 35 nm or less, and still more preferably 30 nm or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the lower limit of the average primary particle size of the abrasive grains is preferably 15 nm or more, more preferably 20 nm or more, and still more preferably 25 nm or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the particles are dried by a vacuum lyophilizer, and the residue is finely pulverized in a mortar (magnetic, 100 ml) to obtain a measurement sample.
- the BET specific surface area V of the measurement sample is measured using a BET specific surface area measuring device (trade name: Autosorb 6) manufactured by Yuasa Ionics Co., Ltd.
- the average primary particle size D1 is calculated based on the above equation (2a).
- the following formula (2b) is obtained, and the average primary particle diameter D1 can be determined by substituting the BET specific surface area V (m 2 / g) into the formula (2b).
- the upper limit of the average secondary particle diameter of the abrasive grains is preferably 80 nm or less, more preferably 75 nm or less, and still more preferably 70 nm or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the lower limit of the average secondary particle diameter of the abrasive grains is preferably 30 nm or more, more preferably 40 nm or more, and still more preferably 50 nm or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. 60 nm or more is particularly preferable.
- the “average secondary particle size” of the abrasive grains can be measured with a dynamic light scattering type particle size distribution analyzer (eg, trade name: COULTER N5 manufactured by COULTER Electronics).
- the measurement conditions of COULTER are: measurement temperature 20 ° C., solvent refractive index 1.333 (corresponding to water), particle refractive index Unknown (setting), solvent viscosity 1.005 mPa ⁇ s (corresponding to water), Run Time 200 sec, laser incident angle Measure at 90 °, adjust the Intensity (scattering intensity, corresponding to turbidity) to be in the range of 5E + 04 to 4E + 05. If the Intensity is higher than 4E + 05, dilute with water and measure.
- the zeta potential of the abrasive grains in the polishing solution is preferably positive, more preferably +4 mV or more, still more preferably +6 mV or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. , +8 mV or more is particularly preferable, and +10 mV or more is very preferable.
- the zeta potential of the abrasive grains in the polishing solution is preferably +16 mV or less, more preferably +14 mV or less, and still more preferably +12 mV or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the zeta potential ( ⁇ [mV]) can be measured using a zeta potential measurement device.
- the scattering intensity of the measurement sample is 1.0 ⁇ 10 4 to 5.0 ⁇ 10 4 cps ("cps" means counts per second (that is, counts per second) and is a unit of counting of particles.
- the measurement sample is placed in a zeta potential measurement cell to measure the zeta potential.
- the polishing liquid is diluted so that the amount of abrasive grains is 1.7 to 1.8 parts by mass with respect to 100 parts by mass of the polishing liquid.
- the lower limit of the content of abrasive grains is preferably 0.005% by mass or more, more preferably 0.01% by mass or more, based on the total mass of the polishing liquid, from the viewpoint of improving the polishing rate of the material to be polished. .05 mass% or more is more preferable, 0.10 mass% or more is particularly preferable, 0.20 mass% or more is extremely preferable, 0.50 mass% or more is very preferable, and 0.70 mass% or more is still more preferable .
- the upper limit of the content of the abrasive grains is preferably 20% by mass or less, more preferably 15% by mass or less, and 10% by mass or less, based on the total mass of the polishing liquid, from the viewpoint of enhancing the storage stability of the polishing liquid. 5.0 mass% or less is especially preferable, 3.0 mass% or less is very preferable, 1.5 mass% or less is very preferable.
- the polishing liquid according to the present embodiment contains a phosphonic acid compound having a molecular weight of 210 or more.
- the phosphonic acid compound is a compound having a phosphonic acid group.
- the molecular weight of the phosphonic acid compound is preferably 220 or more, more preferably 240 or more, still more preferably 260 or more, and particularly preferably 270 or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. , 280 or more is very preferable, and 290 or more is very preferable.
- the molecular weight of the phosphonic acid compound is preferably 350 or less, more preferably 320 or less, still more preferably 310 or less, and particularly preferably 300 or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide .
- the number of phosphonic acid groups in the phosphonic acid compound is preferably one or more, more preferably two or more, and still more preferably three or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the number of phosphonic acid groups in the phosphonic acid compound is preferably 6 or less, more preferably 5 or less, and still more preferably 4 or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the phosphonic acid compound may be a compound containing a nitrogen atom or a tertiary amine compound from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon with respect to silicon dioxide.
- the phosphonic acid compound may have a carboxyl group from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- the number of carboxyl groups is preferably 1 or more, more preferably 2 or more, and still more preferably 3 or more.
- the number of carboxyl groups is preferably 6 or less, more preferably 5 or less, and still more preferably 4 or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- Examples of phosphonic acid compounds include nitrilotris methylene phosphonic acid, 2-phosphonobutane-1,2,4-tricarboxylic acid, 4-amino-1-hydroxybutane-1,1-diphosphonic acid, benzhydryl phosphonic acid, Bromobutyl) phosphonic acid, (4-bromophenyl) phosphonic acid, 1,4-butylenediphosphonic acid, N, N, N ', N'-ethylenediaminetetrakis (methylenephosphonic acid), glycine-N, N-bis (methylene) Phosphonic acid), 1,6-Hexylenediphosphonic acid, 1,5-Pentylenediphosphonic acid, 1,4-phenylenediphosphonic acid, o-xylylene diphosphonic acid, m-xylene diphosphonic acid, p-xylene diphosphonic acid
- Examples include phosphonic acid, 1-hydroxy-2- (1-imidazolyl) ethane-1,
- the phosphonic acid compound is a group consisting of nitrilotris methylene phosphonic acid and 2-phosphonobutane-1,2,4-tricarboxylic acid from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide At least one selected from the above is preferred, and nitrilotris methylene phosphonic acid is more preferred.
- the lower limit of the content of the phosphonic acid compound is preferably 0.005% by mass or more, based on the total mass of the polishing liquid, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. .01 mass% or more is more preferable, 0.02 mass% or more is more preferable, 0.03 mass% or more is particularly preferable, 0.05 mass% or more is extremely preferable, 0.10 mass% or more is very preferable, 0.20 mass% or more is still more preferable.
- the upper limit of the content of the phosphonic acid compound is preferably 10% by mass or less, based on the total mass of the polishing liquid, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. Mass% or less is more preferable, 3.0 mass% or less is further preferable, 1.0 mass% or less is particularly preferable, 0.50 mass% or less is extremely preferable, and 0.30 mass% or less is very preferable.
- the polishing liquid according to the present embodiment contains at least one amino acid component (excluding the compound corresponding to the phosphonic acid compound) selected from the group consisting of amino acids and amino acid derivatives.
- amino acid derivatives include esters of amino acids, salts of amino acids, peptides and the like.
- An amino acid is a compound having both an amino group and a carboxyl group functional group.
- amino acid component ⁇ -alanine, ⁇ -alanine (alias: 3-aminopropanoic acid), 2-aminobutyric acid, norvaline, valine, leucine, norleucine, isoleucine, alloisoleucine, phenylalanine, proline, sarcosine, ornithine, lysine, Serine, threonine, allothreonine, homoserine, tyrosine, 3,5-diiodo-tyrosine, ⁇ - (3,4-dihydroxyphenyl) -alanine, thyroxine, 4-hydroxy-proline, cysteine, methionine, ethionine, lanthionine, cystathionine, Cystine, cysteic acid, aspartic acid, glutamic acid, S- (carboxymethyl) -cysteine, 4-aminobutyric acid, asparagine, glutamine, azaserine
- amino acid components low molecular weight amino acids are preferred from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- an amino acid having a molecular weight of 300 or less is preferable, an amino acid having a molecular weight of 250 or less is more preferable, and an amino acid having a molecular weight of 200 or less is still more preferable.
- Such amino acids include ⁇ -alanine (molecular weight 89), ⁇ -alanine (molecular weight 89), serine (molecular weight 105), histidine (molecular weight 155), glycylglycine (molecular weight 132), glycylglycylglycine (molecular weight 189) Etc.).
- the lower limit of the content of the amino acid component is preferably 0.005% by mass or more, based on the total mass of the polishing liquid, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide.
- 01 mass% or more is more preferable, 0.02 mass% or more is further preferable, 0.03 mass% or more is particularly preferable, 0.05 mass% or more is extremely preferable, 0.10 mass% or more is very preferable, 0 20 mass% or more is still more preferable.
- the upper limit of the content of the amino acid component is preferably 10% by mass or less, based on the total mass of the polishing liquid, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide, 5.0 mass % Or less is more preferable, 3.0 mass% or less is further preferable, 1.0 mass% or less is particularly preferable, 0.50 mass% or less is extremely preferable, and 0.30 mass% or less is very preferable.
- the polishing liquid according to the present embodiment may further contain other additives (excluding the phosphonic acid compound and the amino acid compound).
- the additive include phosphonic acid compounds having a molecular weight of less than 210, water-soluble polymers, oxidizing agents (for example, hydrogen peroxide) and the like.
- water-soluble polymer examples include polyacrylic acid-based polymers such as polyacrylic acid, polyacrylic acid copolymer, polyacrylic acid salt and polyacrylic acid copolymer salt; polymethacrylic acid such as polymethacrylic acid and polymethacrylic acid salt Acid polymers; Polyacrylamide; Polydimethylacrylamide; Alginic acid, pectic acid, carboxymethylcellulose, agar, curdlan, dextrin, cyclodextrin, polysaccharides such as pullulan; Vinyl polymers such as polyvinyl alcohol, polyvinyl pyrrolidone, polyacrolein; Poly Glycerin, glycerin-based polymers such as polyglycerin derivatives; polyethylene glycol etc. may be mentioned.
- polyacrylic acid-based polymers such as polyacrylic acid, polyacrylic acid copolymer, polyacrylic acid salt and polyacrylic acid copolymer salt
- polymethacrylic acid such as polymethacrylic acid and poly
- the polishing liquid according to the present embodiment can contain water.
- water examples include deionized water and ultrapure water.
- the content of water may be the balance of the polishing solution excluding the contents of other components, and is not particularly limited.
- the lower limit of the pH of the polishing liquid according to this embodiment is preferably 1.0 or more, more preferably 1.5 or more, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. Is more preferably 0.2, particularly preferably 2.2 or more, very preferably 2.4 or more, very preferably 2.5 or more, and still more preferably 2.7 or more.
- the upper limit of pH is preferably 6.0 or less, more preferably 5.0 or less, still more preferably 4.0 or less, from the viewpoint of facilitating non-selective polishing of silicon nitride and polysilicon relative to silicon dioxide. .0 or less is particularly preferable, and less than 3.0 is very preferable. From the above viewpoint, the pH of the polishing liquid is preferably 1.0 to 6.0, and more preferably 2.0 to 5.0.
- the pH of the polishing liquid is defined as the pH at a liquid temperature of 25 ° C.
- the pH of the polishing solution can be adjusted by an acid component such as an inorganic acid or an organic acid; an alkali component such as ammonia, sodium hydroxide, tetramethylammonium hydroxide (TMAH), imidazole or an alkanolamine.
- a buffer may be added to stabilize the pH.
- a buffer may be added as a buffer (a solution containing a buffer). Examples of such buffer include acetate buffer, phthalate buffer and the like.
- the pH of the polishing liquid according to the present embodiment can be measured with a pH meter (for example, Model F-51 manufactured by HORIBA, Ltd.).
- a pH meter for example, Model F-51 manufactured by HORIBA, Ltd.
- standard buffer phthalate pH buffer, pH: 4.01; neutral phosphate pH buffer, pH: 6.86; borate pH buffer, pH: 9.18
- the electrode is placed in a polishing solution, and the pH after being stabilized for 3 minutes or more is measured by the above measuring apparatus.
- the temperature of both the standard buffer solution and the polishing solution is 25 ° C.
- the polishing liquid according to the present embodiment may be stored as a one-component polishing liquid containing at least abrasive grains, a phosphonic acid compound and an amino acid component, and the slurry (first liquid) and the additive liquid (second).
- the components of the polishing liquid may be stored as a multi-liquid (for example, two-liquid) polishing liquid set in which the components of the polishing liquid are divided into a slurry and an additive liquid so as to be the polishing liquid.
- the slurry contains, for example, at least abrasive grains and water.
- the additive solution contains, for example, at least a phosphonic acid compound, an amino acid component, and water.
- the constituent components of the polishing liquid may be stored as a polishing liquid set divided into three or more liquids.
- the slurry and the additive liquid are mixed immediately before or at the time of polishing to produce a polishing liquid.
- the one-component polishing solution may be stored as a storage solution for the polishing solution in which the content of the liquid medium is reduced, and may be used by diluting with the liquid medium at the time of polishing.
- the multi-liquid type polishing liquid set may be stored as a storage liquid for slurry and a storage liquid for additive liquid in which the content of the liquid medium is reduced, and may be used by diluting with the liquid medium at the time of polishing.
- a polishing method includes a polishing step of polishing a surface to be polished including silicon dioxide and at least one selected from the group consisting of silicon nitride and polysilicon using the polishing liquid according to the present embodiment.
- the polishing method according to the present embodiment includes a polishing step of polishing a surface to be polished containing silicon dioxide, silicon nitride and polysilicon using the polishing liquid according to the present embodiment.
- the polishing liquid used in the polishing step may be the one-component polishing liquid, or may be a polishing liquid obtained by mixing the slurry and the additive liquid in the polishing liquid set.
- silicon dioxide, silicon nitride and polysilicon can be polished simultaneously. In this case, it is possible to polish while planarizing the surface to be polished containing silicon dioxide, silicon nitride and polysilicon.
- the polishing liquid is supplied between the surface to be polished and the polishing pad in a state where the surface to be polished of the substrate is pressed against the polishing pad (polishing cloth) of the polishing plate, and the substrate and the polishing plate To move the surface relative to each other to polish the surface to be polished.
- the polishing step for example, at least a portion of each of silicon dioxide, silicon nitride and polysilicon is removed by polishing.
- the substrate to be polished may, for example, be a substrate to be polished.
- the substrate to be polished include a substrate on which a material to be polished is formed on a substrate (for example, a semiconductor substrate on which an STI pattern, a gate pattern, a wiring pattern and the like are formed) involved in semiconductor manufacture.
- the material to be polished include silicon oxide, silicon nitride, and polysilicon.
- the material to be polished may be in the form of a film (film to be polished), or may be a silicon oxide film, a silicon nitride film, a polysilicon film or the like.
- a polishing apparatus a general polishing apparatus having a holder capable of holding a substrate having a surface to be polished and a polishing surface plate to which a polishing pad can be attached can be used.
- a motor or the like capable of changing the rotational speed may be attached to each of the holder and the polishing table.
- a polishing apparatus for example, a polishing apparatus Reflexion manufactured by APPLIED MATERIALS can be used.
- the material of the polishing pad includes polyurethane, acrylic resin, polyester, acrylic-ester copolymer, polytetrafluoroethylene, polypropylene, polyethylene, poly 4-methylpentene, cellulose, cellulose ester, polyamide (for example, nylon (trade name)) And resins such as aramid), polyimides, polyimide amides, polysiloxane copolymers, oxirane compounds, phenol resins, polystyrenes, polycarbonates, and epoxy resins.
- the lower limit of the ratio of the polishing rate of silicon nitride and polysilicon to the polishing rate of silicon dioxide is preferably 0.80 or more, more preferably 0.85 or more, still more preferably 0.90 or more, and particularly preferably 0.95 or more.
- the upper limit of the ratio of the polishing rate of silicon nitride and polysilicon to the polishing rate of silicon dioxide is preferably 1.20 or less, more preferably less than 1.20, still more preferably 1.15 or less, and particularly preferably 1.10 or less , 1.05 or less is very preferable. From the viewpoint, the ratio is preferably 0.80 to 1.20, and more preferably 0.80 or more and less than 1.20.
- the present invention will be described in more detail by way of examples.
- the present invention is not limited to these examples unless it deviates from the technical concept of the present invention.
- the kind of material of the polishing liquid and the compounding ratio thereof may be any kind and ratio other than the kind and ratio described in the present embodiment
- the composition and structure of the object to be polished may be other than the composition and structure described in the present embodiment.
- Examples 2 to 4 and Comparative Examples 1 to 7 The same operations as in Example 1 were performed using the components shown in Tables 2 and 3 to obtain CMP polishing liquids of Examples 2 to 4 and Comparative Examples 1 to 7.
- the molecular weight of 2-phosphonobutane-1,2,4-tricarboxylic acid is 270.13, and the molecular weight of 1-hydroxyethane-1,1-diphosphonic acid is 206.03.
- the zeta potential of the abrasive grains in the CMP polishing liquid was measured as follows.
- As the zeta potential measuring device trade name: DELSA NANOC manufactured by Beckman Coulter, Inc. was used.
- the CMP polishing liquid was diluted with pure water so that the scattering intensity of the measurement sample was 1.0 ⁇ 10 4 to 5.0 ⁇ 10 4 cps in the zeta potential measurement device, to obtain a measurement sample. Then, the measurement sample was placed in a zeta potential measurement cell to measure the zeta potential. The results are shown in Tables 2 and 3.
- Polishing apparatus CMP polishing machine Reflexion LK (manufactured by APPLIED MATERIALS) Polishing pad: Polyurethane pad Fujibo H800 (manufactured by Fujibo Ehime Co., Ltd.) Polishing pressure: 10 kPa ⁇ Plate speed: 93 rpm ⁇ Head rotation speed: 87 rpm ⁇ Supply amount of CMP polishing liquid: 300 ml / min Polishing time: 60 seconds
- polishing selectivity of silicon nitride and polysilicon was calculated when the polishing rate of silicon dioxide was 1.00. The results are shown in Tables 2 and 3.
- the polishing rate of silicon dioxide is 1.00
- the polishing rates of silicon nitride and polysilicon are 0.80 to 1.20, and silicon nitride and polysilicon are not selective to silicon dioxide. It can be seen that it can be polished.
- Comparative Example 1 in which the degree of association of the abrasive grains is small, it is understood that silicon nitride can not be nonselectively polished with respect to silicon dioxide.
- Comparative Example 2 in which the silanol group density of the abrasive grains is large, it is understood that silicon nitride and polysilicon can not be nonselectively polished with respect to silicon dioxide.
- Comparative Examples 3 to 7 in which at least one of the phosphonic acid compound and the amino acid component is not used, it is understood that silicon nitride and polysilicon can not be nonselectively polished with respect to silicon dioxide.
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Abstract
Description
本明細書において、「~」を用いて示された数値範囲は、「~」の前後に記載される数値をそれぞれ最小値及び最大値として含む範囲を示す。本明細書に段階的に記載されている数値範囲において、ある段階の数値範囲の上限値又は下限値は、他の段階の数値範囲の上限値又は下限値と任意に組み合わせることができる。本明細書に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。「A又はB」とは、A及びBのどちらか一方を含んでいればよく、両方とも含んでいてもよい。本明細書に例示する材料は、特に断らない限り、1種を単独で又は2種以上を組み合わせて用いることができる。本明細書において、組成物中の各成分の含有量は、組成物中に各成分に該当する物質が複数存在する場合、特に断らない限り、組成物中に存在する当該複数の物質の合計量を意味する。
本実施形態に係る研磨液は、砥粒と、分子量210以上のホスホン酸化合物と、アミノ酸及びアミノ酸誘導体からなる群より選ばれる少なくとも一種のアミノ酸成分と、を含有し、前記砥粒のシラノール基密度が6.5個/nm2以下であり、前記砥粒の会合度が1.5以上である。本実施形態に係る研磨液は、CMP研磨液として用いることができる。本実施形態に係る研磨液は、二酸化ケイ素と、窒化ケイ素及びポリシリコンからなる群より選ばれる少なくとも一種と、を含む被研磨面を研磨するために用いることが可能であり、二酸化ケイ素、窒化ケイ素及びポリシリコンを含む被研磨面を研磨するために用いることもできる。
本実施形態に係る研磨液は、砥粒を含有する。砥粒の材質としては、シリカ、アルミナ、セリア等が挙げられる。砥粒としては、二酸化ケイ素に対して窒化ケイ素及びポリシリコンを非選択的に研磨しやすい観点から、シリカを含むことが好ましく、コロイダルシリカを含むことがより好ましい。
[式中、NA(単位:個/mol)はアボガドロ数、SBET(単位:m2/g)は粒子のBET比表面積をそれぞれ示す。BET比表面積の測定方法については後述する。]
D1=6/(ρ×V) …(2a)
[式中、D1は平均一次粒径(単位:m)、ρは粒子の密度(単位:kg/m3)、VはBET比表面積(単位:m2/g)をそれぞれ示す。]
D1=2.727×10-6/V(m)=2727/V(nm) …(2b)
本実施形態に係る研磨液は、分子量210以上のホスホン酸化合物を含有する。ホスホン酸化合物は、ホスホン酸基を有する化合物である。
本実施形態に係る研磨液は、アミノ酸及びアミノ酸誘導体からなる群より選ばれる少なくとも一種のアミノ酸成分(ホスホン酸化合物に該当する化合物を除く)を含有する。アミノ酸誘導体としては、アミノ酸のエステル、アミノ酸の塩、ペプチド等が挙げられる。アミノ酸は、アミノ基及びカルボキシル基の両方の官能基を有する化合物である。
本実施形態に係る研磨液は、その他の添加剤(前記ホスホン酸化合物及び前記アミノ酸化合物を除く)を更に含有していてもよい。添加剤としては、分子量210未満のホスホン酸化合物、水溶性高分子、酸化剤(例えば過酸化水素)等が挙げられる。
本実施形態に係る研磨液のpHの下限は、二酸化ケイ素に対して窒化ケイ素及びポリシリコンを非選択的に研磨しやすい観点から、1.0以上が好ましく、1.5以上がより好ましく、2.0以上が更に好ましく、2.2以上が特に好ましく、2.4以上が極めて好ましく、2.5以上が非常に好ましく、2.7以上がより一層好ましい。pHの上限は、二酸化ケイ素に対して窒化ケイ素及びポリシリコンを非選択的に研磨しやすい観点から、6.0以下が好ましく、5.0以下がより好ましく、4.0以下が更に好ましく、3.0以下が特に好ましく、3.0未満が極めて好ましい。前記観点から、研磨液のpHは、1.0~6.0であることが好ましく、2.0~5.0であることがより好ましい。研磨液のpHは、液温25℃におけるpHと定義する。
本実施形態に係る研磨方法は、本実施形態に係る研磨液を用いて、二酸化ケイ素と、窒化ケイ素及びポリシリコンからなる群より選ばれる少なくとも一種と、を含む被研磨面を研磨する研磨工程を備える。例えば、本実施形態に係る研磨方法は、本実施形態に係る研磨液を用いて、二酸化ケイ素、窒化ケイ素及びポリシリコンを含む被研磨面を研磨する研磨工程を備える。研磨工程において用いる研磨液としては、前記一液式研磨液であってもよく、前記研磨液セットにおけるスラリと添加液とを混合して得られる研磨液であってもよい。研磨工程では、二酸化ケイ素、窒化ケイ素及びポリシリコンを同時に研磨することができる。この場合、二酸化ケイ素、窒化ケイ素及びポリシリコンを含む被研磨面を平坦化しつつ研磨することができる。
表1の物性を有するコロイダルシリカA~Cを準備した。
(実施例1)
表2の添加剤A(ニトリロトリスメチレンホスホン酸、分子量:299.05)及び添加剤B(グリシン)を容器にそれぞれ0.20質量部入れた。続いて、超純水をX質量部注いだ後、攪拌・混合して添加剤A及び添加剤Bを溶解させた。次に、シリカ粒子として1.0質量部に相当するコロイダルシリカAを添加し、実施例1のCMP研磨液を得た。なお、前記超純水のX質量部は、CMP研磨液の合計が100質量部になるよう計算して求めた。
表2及び表3に示す各成分を用いて実施例1と同様の操作を行い、実施例2~4及び比較例1~7のCMP研磨液を得た。2-ホスホノブタン-1,2,4-トリカルボン酸の分子量は270.13であり、1-ヒドロキシエタン-1,1-ジホスホン酸の分子量は206.03である。
(CMP研磨液のpH)
CMP研磨液のpHを以下の条件により測定した。結果を表2及び表3に示す。
測定温度:25℃
測定装置:株式会社堀場製作所(HORIBA,Ltd.)製Model F-51
測定方法:標準緩衝液(フタル酸塩pH緩衝液、pH:4.01(25℃);中性リン酸塩pH緩衝液、pH:6.86(25℃);ホウ酸塩pH緩衝液、pH:9.18(25℃))を用いて3点校正した後、電極をCMP研磨液に入れて、3分以上経過して安定した後のpHを前記測定装置により測定した。
CMP研磨液中における砥粒のゼータ電位を下記のとおり測定した。ゼータ電位測定装置としては、ベックマンコールター社製の商品名:DELSA NANO Cを用いた。ゼータ電位測定装置において測定サンプルの散乱強度が1.0×104~5.0×104cpsとなるようにCMP研磨液を純水で希釈して測定サンプルを得た。そして、測定サンプルをゼータ電位測定用セルに入れてゼータ電位を測定した。結果を表2及び表3に示す。
得られたCMP研磨液を用いて、下記3種類のブランケット基板を下記研磨条件で研磨した。
・厚さ10000Åの二酸化ケイ素膜をシリコン基板上に有するブランケット基板。
・厚さ2500Åの窒化ケイ素膜をシリコン基板上に有するブランケット基板。
・厚さ5000Åのポリシリコン膜をシリコン基板上に有するブランケット基板。
・研磨装置:CMP用研磨機Reflexion LK(APPLIED MATERIALS社製)
・研磨パッド:ポリウレタン製パッドFujibo H800(フジボウ愛媛株式会社製)
・研磨圧力:10kPa
・定盤回転数:93rpm
・ヘッド回転数:87rpm
・CMP研磨液の供給量:300ml/min
・研磨時間:60秒
フィルメトリクス株式会社製の光干渉式膜厚測定装置(装置名:F80)を用いて、研磨前後の被研磨膜(二酸化ケイ素膜、窒化ケイ素膜及びポリシリコン膜)の膜厚を測定して膜厚の変化量を算出した。79点の膜厚を測定し、膜厚の平均値を用いて膜厚の変化量を算出した。膜厚の変化量と研磨時間とに基づき、下記式により被研磨膜の研磨速度を算出した。結果を表2及び表3に示す。
研磨速度[Å/min]=(研磨前の膜厚[Å]-研磨後の膜厚[Å])/研磨時間[min]
Claims (8)
- 砥粒と、
分子量210以上のホスホン酸化合物と、
アミノ酸及びアミノ酸誘導体からなる群より選ばれる少なくとも一種と、を含有し、
前記砥粒のシラノール基密度が6.5個/nm2以下であり、
前記砥粒の会合度が1.5以上である、研磨液。 - 前記砥粒がコロイダルシリカを含む、請求項1に記載の研磨液。
- 前記砥粒のゼータ電位が正である、請求項1又は2に記載の研磨液。
- pHが2.0~5.0である、請求項1~3のいずれか一項に記載の研磨液。
- 二酸化ケイ素、窒化ケイ素及びポリシリコンを含む被研磨面を研磨するために用いられる、請求項1~4のいずれか一項に記載の研磨液。
- 二酸化ケイ素の研磨速度に対する窒化ケイ素及びポリシリコンの研磨速度の比率が0.80~1.20である、請求項1~5のいずれか一項に記載の研磨液。
- 二酸化ケイ素の研磨速度に対する窒化ケイ素及びポリシリコンの研磨速度の比率が0.80以上1.20未満である、請求項1~5のいずれか一項に記載の研磨液。
- 請求項1~7のいずれか一項に記載の研磨液を用いて、二酸化ケイ素、窒化ケイ素及びポリシリコンを含む被研磨面を研磨する工程を備える、研磨方法。
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KR20210053082A (ko) * | 2019-11-01 | 2021-05-11 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법 |
KR102570805B1 (ko) | 2019-11-01 | 2023-08-24 | 삼성에스디아이 주식회사 | 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법 |
US20210147714A1 (en) * | 2019-11-20 | 2021-05-20 | Fujimi Incorporated | Polishing composition, polishing method, and method for manufacturing substrate |
CN112824475A (zh) * | 2019-11-20 | 2021-05-21 | 福吉米株式会社 | 研磨组合物、研磨方法及基板的制造方法 |
CN113903832A (zh) * | 2021-12-09 | 2022-01-07 | 绍兴拓邦电子科技有限公司 | 一种晶硅表面电池的碱抛光方法 |
CN113903832B (zh) * | 2021-12-09 | 2022-02-25 | 绍兴拓邦电子科技有限公司 | 一种晶硅表面电池的碱抛光方法 |
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JP6881585B2 (ja) | 2021-06-02 |
KR20220086712A (ko) | 2022-06-23 |
TWI773803B (zh) | 2022-08-11 |
TW201910481A (zh) | 2019-03-16 |
US20200369917A1 (en) | 2020-11-26 |
US11655394B2 (en) | 2023-05-23 |
JPWO2019030865A1 (ja) | 2020-04-16 |
CN110997856A (zh) | 2020-04-10 |
KR20200023463A (ko) | 2020-03-04 |
KR102410551B1 (ko) | 2022-06-16 |
CN110997856B (zh) | 2021-10-29 |
KR102571098B1 (ko) | 2023-08-24 |
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