WO2019019661A1 - Light conversion device and preparation method therefor, and infrared imaging device - Google Patents

Light conversion device and preparation method therefor, and infrared imaging device Download PDF

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Publication number
WO2019019661A1
WO2019019661A1 PCT/CN2018/079022 CN2018079022W WO2019019661A1 WO 2019019661 A1 WO2019019661 A1 WO 2019019661A1 CN 2018079022 W CN2018079022 W CN 2018079022W WO 2019019661 A1 WO2019019661 A1 WO 2019019661A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting
layer
electrode
transport layer
Prior art date
Application number
PCT/CN2018/079022
Other languages
French (fr)
Chinese (zh)
Inventor
陈崧
曹蔚然
杨一行
向超宇
钱磊
Original Assignee
Tcl集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201710617166.1A external-priority patent/CN109309106A/en
Priority claimed from CN201710616883.2A external-priority patent/CN109309102A/en
Priority claimed from CN201710616712.XA external-priority patent/CN109309104B/en
Application filed by Tcl集团股份有限公司 filed Critical Tcl集团股份有限公司
Publication of WO2019019661A1 publication Critical patent/WO2019019661A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • the invention belongs to the field of display devices, and in particular relates to a device for light conversion, a preparation method thereof and an infrared imaging device.
  • Infrared imaging technology has been used in medical, military, night vision, satellite and civilian applications, and has always been a hot spot in scientific research.
  • researchers have proposed near-infrared or high-frequency visible-light conversion imaging devices that can achieve low-frequency infrared light to higher frequencies.
  • a typical infrared-visible conversion imaging device is a device based on a silicon material and a photomultiplier tube.
  • the device is bulky, and when it is used as a wearable night vision device, it has high power consumption and poor portability.
  • Shortcomings In order to improve the aforementioned shortcomings, researchers began to turn to the study of film-based night vision devices. A more recent improvement is the integration of photosensitive and luminescent materials into a single pixel and the connection of the photosensitive and illuminating portions with a gain-functioning drain gate transistor to form a complex laminate structure.
  • such a device has the characteristics of high film thickness, transparency, and high external quantum efficiency.
  • due to the complicated structure of the device and the high process difficulty it is very difficult to achieve large-area copying.
  • the existing infrared-visible conversion imaging device has problems of high power consumption, poor portability, complicated structure, high process difficulty, high production cost, difficulty in realizing large-area copying, and difficulty in obtaining high gain.
  • An object of the present invention is to provide a device for optical conversion, a method for fabricating the same, and an infrared imaging device, which are intended to solve the problem. Therefore, the existing infrared-visible conversion imaging device has high power consumption, poor portability, complicated structure, and high process difficulty. The production cost is high, it is difficult to achieve copying of a large area, and it is difficult to obtain a high gain.
  • the present invention provides a light converting device, the device comprising:
  • the invention also provides a method for preparing a light conversion device, the preparation method comprising the following steps:
  • a connecting member is disposed on the upper surface of the photosensitive member and the upper surface of the light emitting member, and the photosensitive member and the light emitting member are connected by a connecting member.
  • the present invention also provides an infrared imaging apparatus comprising the device as described above or a device comprising the preparation method as described above.
  • the light-converting device provided by the present invention has a device structure that is more compact, thin, and small in size by arranging the photosensitive member and the light-emitting member in parallel on the substrate and connecting the photosensitive member and the light-emitting member through the connecting member.
  • the light-converting device of the invention is more suitable for printing preparation, has fewer printing preparation layers, is more efficient in preparation, and has a significantly higher yield.
  • the infrared imaging device produced by using the device of the invention is light in weight and suitable for wearing.
  • the preparation method of the light conversion device provided by the invention has the advantages of simple preparation process, low cost and large-area production.
  • FIG. 1 is a schematic structural diagram of a light conversion device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a specific structure of a device corresponding to the light conversion of FIG. 1 according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram showing the working principle of the hole current and the electron flow corresponding to FIG. 2 according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram showing the working principle of the hole current and the electron current corresponding to FIG. 3 according to an embodiment of the present invention
  • FIG. 5 is another schematic structural diagram of a light conversion device according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a pixel arrangement of a photosensitive member and a light-emitting component according to an embodiment of the present invention
  • FIG. 7 is a schematic diagram of a pixel arrangement of another photosensitive member and a light-emitting component according to an embodiment of the present invention.
  • FIG. 8 is a schematic diagram showing the multilayer structure, energy band structure and principle of the photosensitive member of FIG. 1 according to an embodiment of the present invention
  • FIG. 9 is another schematic structural diagram of a light conversion device according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of a connecting component of a light conversion device according to an embodiment of the present invention.
  • FIG. 11 is another schematic structural view of a connecting member of a light conversion device according to an embodiment of the present invention.
  • FIG. 12 is a schematic diagram showing an equivalent circuit of a PNP semiconductor structure provided by an embodiment of the present invention.
  • Figure 13 is a block diagram showing still another structure of a connecting member of a light-converting device according to an embodiment of the present invention.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated.
  • features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • the meaning of "a plurality" is two or more unless specifically and specifically defined otherwise.
  • FIG. 1 is a schematic structural diagram of a device for optical conversion according to an embodiment of the present invention.
  • the device is used for conversion of non-visible light and visible light, comprising: a substrate 1, a connecting member 2, a photosensitive member 3 disposed between the substrate 1 and the connecting member 2 and juxtaposed, and a light-emitting member 4, wherein the photosensitive member 3
  • the light-emitting component 4 is connected to the connecting component 2.
  • the device structure is more compact, thin, and small in size;
  • the components 4 are arranged side by side, the arrangement is more reasonable, and the number of print preparation layers is small.
  • the light conversion device of the invention is more suitable for printing preparation, has higher preparation efficiency, and has a significantly higher yield.
  • the photosensitive member 3 and the light-emitting member 4 are connected by the connecting member 2, and when the device is in an operating state, the photosensitive member 3 converts the input non-visible light signal into photogenerated electrons, and the photogenerated electrons are injected into the light-emitting member 4 through the connecting member 2 to drive the light-emitting member Emit visible light.
  • the selection of the substrate 1 is not limited, and a flexible substrate or a rigid substrate may be employed.
  • the substrate 1 is preferably a glass substrate or a flexible substrate having a good light transmittance, and the material of the substrate 1 has a small absorption capacity for an invisible wavelength band to ensure that the signal intensity of the invisible light entering the device is not weakened by the substrate 1.
  • the photosensitive member 3 of the present invention may be, for example, a quantum dot photosensitive member because the quantum dot light-emitting device has a lower driving voltage and lower energy consumption; the device prepared by using the quantum dot material has a longer service life and has an environment Better tolerance.
  • the photosensitive member 3 and the light-emitting member 4 are connected by a connecting member 2, and the photosensitive member 3 converts the input non-visible light signal into photogenerated electrons through the connecting member 2 when the device is in an operating state.
  • the light-emitting member 4 is injected and combined with the holes injected into the light-emitting member 4 to cause the light-emitting member 4 to generate a photon-driven light-emitting member to emit visible light.
  • the light-emitting member 4 of the present invention is not limited to an organic light-emitting diode or a quantum dot light-emitting diode, and a quantum dot light-emitting diode is preferably used.
  • the quantum dot light-emitting diode has better color purity; the quantum dot material has a significantly narrower luminescence peak. Under the same external quantum efficiency, the emission wavelength can be adjusted to achieve a larger output brightness than the organic material, which is advantageous for imaging. Human eye observation; quantum dot light-emitting devices have lower driving voltage and lower energy consumption; devices fabricated using quantum dot materials have longer lifetime and better tolerance to the environment.
  • the connecting member is a first electrode or a gain member, and may be a conventional conductor or a connecting member having a gain function (such as a transistor).
  • the photosensitive member when the connecting member is a first electrode, the photosensitive member includes a second electrode laminated on the substrate and a first electron transport layer sequentially stacked on the second electrode, a light absorbing layer and a second electron transport layer.
  • the photosensitive member and the light-emitting member are combined in such a manner that the substrate is juxtaposed on the substrate and the circuit is back-to-back in series, and the photosensitive member is disposed to have the second electrode, the first electron transport layer, and the first layer.
  • the light-conducting layer and the photoconductor structure of the second electron-transporting layer are used instead of the existing diode structure, so that the formed photoconductor structure has high light-detecting efficiency, so that the device has higher light-sensing light-emitting efficiency, and at the same time, due to the structure of the device Compact, small size and light weight, it meets the requirements of portable imaging of the device; and because each pixel has a simple structure and low process difficulty, each pixel is suitable for the existing printing preparation process, reducing the cost and realizing a large area. Copy.
  • the photosensitive member is formed as follows: a second electrode is deposited on the substrate, and a first electron transport layer, a first light absorbing layer, and a second electron transport layer are sequentially deposited on the second electrode; at this time, the first electrode is formed On the outer surface of the second electron transport layer.
  • the multilayer structure, energy band structure and principle schematic diagram of the above photosensitive member are as shown in FIG. 8 (wherein 305 is electron, 306 is incident light, 307 is second electrode, 308 is first electron transport layer, and 309 is first light absorbing layer).
  • 310 is a second electron transport layer
  • the dissociated electrons 305 generated by the first light absorbing layer 309 modulate the magnitude of the current passing through the electrons 305 by changing the width of the Schottky barrier. Control of current injection into the light-emitting component is achieved.
  • a Schottky barrier is formed between the first light absorbing layer 309 and the first electron transport layer 308 and the first light absorbing layer 309 and the second electron transport layer 310, and the current is weak; when the first light absorbing layer After 309 absorbs photons to generate photoelectrons, the Schottky barrier width is greatly reduced, and the original Schottky barrier is converted into an approximate ohmic contact, and the current is increased.
  • the first electrode connects the photosensitive member and the light emitting member in series, so as to prevent the first electrode from transmitting light in the invisible band as low as possible to prevent entry.
  • the invisible light signal of the device is leaked through the first electrode to reduce the signal intensity of the invisible light, and therefore, the first electrode is an opaque electrode .
  • the first electrode is only a partial area covering the light-emitting part.
  • the first electrode covers only the upper surface of the light-emitting part close to 5% of the light-absorbing part.
  • the connecting member is a gain member
  • the device structure is more compact, thin, and bulk by taking the photosensitive member and the light-emitting member side by side on the substrate and connecting the photosensitive member and the light-emitting member through the gain member.
  • the photosensitive member and the light-emitting member are arranged side by side, the arrangement is more reasonable, and the number of print preparation layers is small, the light-converting device of the present invention is more suitable for printing preparation, has higher preparation efficiency, and has a significantly higher yield.
  • the gain component may be a bipolar transistor, a base of the bipolar transistor is connected to an upper surface of the photosensitive member, and an emitter of the bipolar transistor is connected to the light emitting The upper surface of the part.
  • the gain component is an NPN or PNP bipolar transistor, the base of the bipolar transistor is connected to the upper surface of the photosensitive member, and the emitter of the bipolar transistor is connected to the upper surface of the light emitting component.
  • the collector of the polarity transistor is grounded.
  • the gain member is a NPN bipolar transistor (see FIG.
  • the upper surface of the photosensitive member and the upper surface of the light emitting member are connected by a p-type semiconductor, and the p-type semiconductor, the photosensitive member, and the light-emitting member are covered by the n-type semiconductor.
  • the gain member is a PNP bipolar transistor (see FIG. 11)
  • the upper surface of the photosensitive member and the upper surface of the light emitting member are connected by an n-type semiconductor, and the n-type semiconductor, the photosensitive member, and the light-emitting member are covered by a p-type semiconductor.
  • the reverse biased photosensitive member 3 operates in a photovoltaic mode, and the photogenerated electrons generated by the light absorbing layer in the photosensitive member 3 pass through the gain member (ie, the connecting member).
  • the preferred embodiment of 2) is injected into the light-emitting layer after gain, and is combined with the holes injected into the light-emitting member 4 to generate photons in the light-emitting layer, thereby realizing the gain effect of the device, so that the device has higher light-sensing light-emitting efficiency.
  • the gain member may also be a hybrid structure including an island-shaped conductor and an n-type semiconductor, the island-shaped conductor being distributed on the upper surface of the light-emitting member and the photosensitive member, the island The shape conductor, the upper surface of the photosensitive member, and the upper surface of the light emitting member are covered by the n-type semiconductor.
  • the gain member is a signal amplifying member including an island-shaped conductor and an n-type semiconductor hybrid structure. Specifically, referring to FIG. 13, an island-shaped conductor, an island-shaped conductor, and a photosensitive member 3 are distributed on the upper surface of the photosensitive member 3 and the upper surface of the light-emitting member 4.
  • the conductor may be a metal conductor such as aluminum or a degenerate semiconductor, and the n-type semiconductor may adopt C60 but is not limited thereto.
  • the gain can be up to 10 5 %.
  • the external quantum efficiency of the photosensitive member 3 is 5%, and the external quantum efficiency of the single light-emitting unit is 20%.
  • the external quantum efficiency of the N light-emitting units is N ⁇ 20%.
  • FIG. 9 is a schematic structural diagram of a device for optical conversion according to an embodiment of the present invention.
  • the light-converting device in Fig. 9 includes a substrate 1, a connecting member 2 provided on the substrate 1, a photosensitive member 3 and a light-emitting member 4 which are disposed between the substrate 1 and the connecting member 2 and are juxtaposed. Among them, the photosensitive member 3 and the light-emitting member 4 are connected by the connecting member 2.
  • the light emitting part 4 includes a third electrode 405 disposed on the substrate 1 and at least two light emitting units stacked on the third electrode (when the two light emitting units are used, the light emitting unit is the first light emitting unit 406, respectively) The two light emitting units 408) and the carrier generation layer 407 disposed between the adjacent light emitting units.
  • the light emitting unit (ie, the first light emitting unit 406 or the second light emitting unit 408) includes a first hole transporting layer, a first light emitting layer, and a third electron transporting layer, and the first light emitting layer is disposed in the first empty layer Between the hole transport layer and the third electron transport layer, the first hole transport layer is disposed adjacent to the first electrode, and the third electron transport layer is disposed adjacent to the connecting member.
  • the structure in which two or more light-emitting units are formed in series in series further increases the current efficiency of the light-emitting member 4, that is, in the case where the photosensitive member 3 supplies the same current, the light-emitting member 4 doubles the output of visible light.
  • the carrier generation layer is a pn junction structure.
  • the carrier generation layer corresponds to a highly doped pn junction on both sides of the junction region, the pn junction being between two light emitting units: electron transport of the n-type semiconductor and one light emitting unit The layers are connected; the p-type semiconductor is connected to the hole transport layer of the other light-emitting unit to facilitate the generation and transport of carriers between the light-emitting units.
  • the carrier-generating layer stack is disposed between the electron transport layer and the hole transport layer.
  • the carrier generation layer is a pn junction structure in which an n-type semiconductor layer is connected to an electron transport layer, and a p-type semiconductor layer is connected to a hole transport layer.
  • the n-type semiconductor layer may specifically be, but not limited to, a doped or undoped oxide semiconductor and an n-type doped organic semiconductor; the p-type semiconductor layer may specifically be, but not limited to, doped or undoped oxidation.
  • Semiconductors and organic semiconductors with p-type doping are examples of semiconductors.
  • the step of forming the light-emitting component is as follows: depositing a third electrode on the substrate; depositing a light-emitting unit, a carrier generation layer, and a light-emitting unit in the direction of the connecting member on the third electrode, repeating the deposition of the light-emitting unit, The steps of the carrier generation layer and the light-emitting unit are adjusted according to the actual design to complete deposition of a predetermined number of light-emitting units. In summary, when the step of forming the light-emitting member is completed, the number of light-emitting units is higher than the number of layers of the carrier-generating layer by one value.
  • the step of forming the light emitting unit includes depositing the first hole transport layer, the first light emitting layer, and the third electron transport layer toward the connecting member in the third electrode.
  • the photosensitive member 3 includes a fourth electrode 301, a second hole transport layer 302, a second light absorbing layer 303, a fourth electron transport layer 304, and a fourth electrode 301.
  • the structural order from the fourth electrode 301 to the connecting member 2 is the second hole transporting layer 302, the second light absorbing layer 303, and the fourth electron transporting layer 304;
  • the light emitting part 4 includes a fifth electrode 401,
  • the third hole transport layer 402, the second light emitting layer 403, and the fifth electron transport layer 404, the fifth electrode 401 is disposed on the substrate 1, and the structure from the fifth electrode 401 to the connecting member 2 is a third hole transport layer. 402, second light emitting layer 403, fifth electron transport layer 404.
  • the fourth electrode 301 is deposited on the substrate 1, and the material of the fourth electrode 301 may be a conventional anode material for grounding. Preferably, it may be indium tin oxide (ITO), and the transmittance of light in the non-visible band can reach 80% or more, and the signal intensity of the non-visible light entering the photosensitive member 3 after passing through the substrate 1 and the ITO can be weakened. Less or not weakened.
  • the fifth electrode 401 is deposited on the substrate 1, and the material of the fifth electrode 401 may be a conventional anode material for connecting a current source.
  • it may be indium tin oxide (ITO), and the transmittance of light in the non-visible band can reach 80% or more, and the signal intensity of the non-visible light entering the photosensitive member 3 after passing through the substrate 1 and the ITO can be weakened. Less or not weakened.
  • ITO indium tin oxide
  • materials of all hole transport layers may be conventional hole transport materials, in order to improve
  • the hole transporting efficiency is preferably at least one of an organic hole transporting material and an oxide hole transporting material, wherein the organic hole transporting material may be poly[bis(4-phenyl)(4-butylbenzene) Amine], 4-butyl-N,N-diphenylaniline homopolymer, aniline, 4-butyl-N,N-diphenyl-, homopolymer (Poly-TPD), poly(9) , 9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), poly(9-vinylcarbazole) (PVK), TPD, Spiro-TPD, LG101, HAT-CN And PEDOT: at least one of PSS, TAPC, a-NPB
  • the first light absorbing layer is deposited on the first electron transport layer
  • the second light absorbing layer is deposited on the second hole transport layer
  • the light absorbing layer is used for absorbing incident light in the non-visible band, such as near Infrared band.
  • the thickness of the first light absorbing layer or the second light absorbing layer is preferably from 10 nm to 100 nm.
  • the first light absorbing layer and the second light absorbing layer are specifically made of inorganic semiconductor nanocrystals as light absorbing materials, preferably including but not limited to II-VI semiconductor nanocrystals, III-V semiconductor nanocrystals, II-V semiconductor nanocrystals, III At least one of a Group VI semiconductor nanocrystal, an IV-VI semiconductor nanocrystal, an I-III-VI semiconductor nanocrystal, a II-IV-VI semiconductor nanocrystal, and a Group IV elemental semiconductor luminescent material.
  • the II-VI semiconductor nanocrystals may be at least one of PbS, PbSe, PbTe, or other binary, ternary, and quaternary II-VI compounds; the III-V semiconductor nanocrystals may be InAs, InGaAs At least one of them, or other binary, ternary, quaternary III-V compounds.
  • the materials of all the electron transport layers may be conventional.
  • the electron transport layer material is preferably a wide band gap oxide electron transport material, a wide band gap sulfide (and a nano material thereof) electron transport material such as ZnO, ZnS, TiO 2 or the like in order to improve electron transport efficiency; or organic Electron transport materials such as phenanthroline (BPHEN), Alq 3, and the like.
  • the first luminescent layer is deposited on the first hole transport layer
  • the second luminescent layer is deposited on the third hole transport layer
  • the luminescent layer is used to emit visible light, such as a green light band.
  • the thickness of the first light-emitting layer and the second light-emitting layer is preferably from 10 nm to 100 nm.
  • the luminescent layer is specifically an inorganic semiconductor nanocrystal as an electroluminescent material, preferably including but not limited to II-VI semiconductor nanocrystals, III-V semiconductor nanocrystals, II-V semiconductor nanocrystals, III-VI semiconductor nanometers At least one of crystalline, IV-VI semiconductor nanocrystals, I-III-VI semiconductor nanocrystals, II-IV-VI semiconductor nanocrystals, Group IV simple materials, and organic light-emitting materials.
  • the II-VI semiconductor nanocrystals may be at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, CdZnS, CdZnSe, CdZnSeS, or other binary, ternary, quaternary II-VI compounds;
  • the III-V semiconductor nanocrystals may be at least one of GaP, GaAs, InP, InAs, or other binary, ternary, quaternary III-V compounds; organic luminescent materials include organic fluorescent materials, organic phosphorescence At least one of the materials.
  • the nanocrystalline material is used as the luminescent material to have better color purity than the organic luminescent material; secondly, the luminescent peak of the nanocrystalline material is significantly narrower.
  • the emission wavelength can be adjusted to achieve a larger output brightness than the organic material, which is beneficial for imaging by the human eye; in addition, the nanocrystalline material as a luminescent material allows the device to have a lower driving voltage and lower energy.
  • the nanocrystalline material can achieve the structure of the all-inorganic material shown in the examples, thereby improving the service life of the device and the tolerance to the environment.
  • the connecting component is the first electrode
  • the first electrode can be used as a cathode, and deposited on the fourth electron transporting layer 304 and the fifth electron transporting layer 404, and the photosensitive member 3 and the light emitting component 4 are
  • the light is generated by injecting photogenerated electrons generated by the photosensitive member 3 into the light-emitting member 4, and recombines with the holes injected into the light-emitting member 4 to generate photons.
  • the solid sphere is an electron and the hollow sphere is a hole
  • the anode (fifth electrode 401) of the light-emitting member 4 is connected to the current source and the anode of the photosensitive member 3 (fourth When the electrode 301) is connected to the ground, the photo-generated component 3 is in the photovoltaic mode, and the photo-generated electrons generated by the second light-absorbing layer 303 are injected into the second light-emitting layer 403 through the common cathode (first electrode), and injected into the anode of the light-emitting component 4
  • the hole recombination generates photons in the second luminescent layer 403.
  • the photosensitive member 3 and the light-emitting member 4 are juxtaposed and isolated between the substrate 1 and the connecting member 2, and the photosensitive member 3 and the light-emitting member 4 are separated from each other and connected by the connecting member 2,
  • the photosensitive member 3 and the light-emitting member 4 are respectively for absorbing incident light of a non-visible band and emitting light of a visible wavelength band.
  • the photosensitive member 3 and the light-emitting member 4 are pattern-distributed on the substrate 1, forming an imaging array of the photosensitive member and the light-emitting member, and converting non-visible light into visible light. Since the photosensitive member 3 and the light-emitting member 4 are independently spaced, the imaging units of the imaging array are arranged separately, so that the distribution of the array is more adapted to the printing apparatus, thereby making the preparation of the device have a higher yield.
  • the photosensitive member 3 and the light-emitting member 4 are separated from each other by spatial isolation, and the photosensitive member 3 and the light-emitting member 4 (see FIG. 5) may be partitioned by providing an isolation dielectric layer to enhance patterning.
  • the imaged array of the patterned distribution may be disposed side by side on the substrate 1 in such a manner that the light-emitting part 4 and the photosensitive member 3 are juxtaposed in number one by one or more.
  • the one-to-one or one-to-many ratio is a proportional relationship, and is not strictly limited in quantity.
  • the device when juxtaposed in a one-to-many manner, the device can be A light-emitting member 4 and a plurality of photosensitive members 3 are arranged side by side, or a plurality of light-emitting members 4 and a plurality of photosensitive members 3 may be arranged side by side on the device, except that the number of the light-emitting members 4 is larger than the number of the photosensitive members 3.
  • the photosensitive member 3 and the light-emitting member 4 are distributed in a ratio of 1:1 (in FIG. 6, 6001 represents a pixel unit in which the photosensitive member 3 and the light-emitting member 4 are distributed in a ratio of 1:1, wherein 6002 represents one
  • 6003 represents a light-emitting member 4).
  • the number of parallel connection of the photosensitive members 3 should be greater than the number of parallel connections of the light-emitting members 4, for example, three photosensitive members 3 and 1
  • the light-emitting members 4 are as shown in Fig. 7 (in Fig. 7, 7001 represents a pixel unit in which the photosensitive member and the light-emitting member are distributed in a ratio of 3:1, wherein 7002 represents a photosensitive member, and 7003 represents a light-emitting member).
  • connection member 2 is connected to one of the light-emitting members 4 or a plurality of the light-emitting members 4 connected in parallel, and such an arrangement can increase the current supply of the photosensitive member 3 to the light-emitting member 4.
  • the device is made to increase the output brightness of the light-emitting component without increasing the difficulty of preparation. Under the reasonable ratio of ensuring the overall output brightness of the device, after the plurality of photosensitive members 3 are connected in parallel, and connected to one of the light-emitting members 4 through the connecting member 2, the output luminance of the single light-emitting device can be ensured, and the preparation efficiency is high.
  • the bottom surface of the photosensitive member 3 and the light-emitting member 4 is connected to the substrate 1, and the surface opposite to the bottom surface is the upper surface of the photosensitive member 3 and the light-emitting member 4, in order to make the transmittance of the connecting member 2 to the invisible band light as high as possible.
  • the invisible light signal entering the device is prevented from leaking through the connecting member 2 to reduce the signal intensity of the invisible light. Therefore, the connecting member 2 is an opaque electrode, preferably a metal, a conductive oxide, graphite or the like as the first electrode material.
  • the upper surface of the photosensitive member 3 is completely covered by the connecting member 2, and the upper surface of the light-emitting member 4 is partially covered by the connecting member 2.
  • the upper surface of the photosensitive member 3 is completely covered by the connecting member 2, so that the photogenerated electrons generated by the photosensitive member 3 can be sufficiently injected into the light-emitting member 4 through the connecting member 2, and in order to ensure the light-transmitting effect of visible light, preferably, the upper surface of the light-emitting member 4
  • the area covered by the connecting member 2 does not exceed 5% of the upper surface area of the light-emitting member 4, and more preferably, the area covered by the connected member 2 of the upper surface of the light-emitting member 4 is 2% to 3% of the surface area of the light-emitting member 4. .
  • the light-converting device provided by the present invention has a more compact device structure by arranging the photosensitive member and the light-emitting member in parallel on the substrate and connecting the photosensitive member and the light-emitting member through the connecting member (ie, the first electrode or the gain member). Thin thickness, small size and light weight.
  • the light-converting device of the invention is more suitable for printing preparation, has fewer printing preparation layers, is more efficient in preparation, and has a significantly higher yield.
  • the photosensitive component converts the input non-visible light signal into photogenerated electrons, and the photogenerated electrons inject the light emitting component through the first electrode to drive the light emitting component to emit visible light, so that the device has higher light-sensing light-emitting efficiency.
  • the infrared imaging device produced by using the device of the invention is light in weight and suitable for wearing.
  • Embodiments of the present invention provide a method of fabricating a light converting device.
  • the method of fabricating the light converting device comprises the following steps:
  • Step S01 forming a photosensitive member and a light-emitting member arranged side by side on the substrate.
  • Step S02 providing a connecting member on the upper surface of the photosensitive member and the upper surface of the light emitting member, wherein the photosensitive member and the light emitting member are connected by connection.
  • step S01 specifically includes:
  • Step S011 depositing a fourth electrode and a fifth electrode on the substrate, respectively.
  • Step S012 depositing a hole transporting material on the fourth electrode and the fifth electrode to form a second hole transporting layer and a third hole transporting layer, respectively.
  • Step S013 depositing a second light absorbing layer and a second light emitting layer on the second hole transport layer and the third hole transport layer, respectively.
  • Step S014 depositing an electron transporting material on the second light absorbing layer and the second light emitting layer to form a fourth electron transporting layer and a fifth electron transporting layer, respectively.
  • the step S02 specifically includes: depositing the connecting member on the fourth electron transport layer and the fifth electron transport layer to form a connecting member common to the photosensitive member and the light emitting member.
  • the substrate, the fourth electrode, the fifth electrode, the second hole transport layer, the second light absorbing layer, the fourth electron transport layer, and the third hole transport layer involved in step S01 and step S02 The description of the related materials of the second luminescent layer, the fifth electron-transporting layer, and the connecting member is the same as that described in the foregoing embodiment, and will not be described here.
  • the photosensitive member and the light-emitting member are juxtaposed between the substrate and the connecting member, and the two members have almost the same film deposition order, hole transport in the photosensitive member and the light-emitting member in material selection
  • the layer material and the electron transport layer material may be shared, the main difference being the light absorbing layer material and the luminescent layer material, and the device of the present invention further simplifies the preparation and is suitable for large-area preparation.
  • the manner of deposition involved in step S01 and step S02 may be vacuum deposition, solution coating (for example, inkjet printing, transfer, embossing) or a combination of the two.
  • a substrate is provided on which electrodes of a photosensitive member and a light-emitting member are separately deposited, and the material is ITO.
  • the material is PbS nanocrystal; printing the luminescent material as the second luminescent layer in the pixel of the illuminating component, and the material is CdSe-CdS core-shell structure nanocrystal.
  • the method for fabricating the optical conversion device provided by the embodiment of the invention has the advantages of simple structure, low process difficulty, simple operation, low cost, and large-scale production.
  • Embodiments of the present invention also provide an infrared imaging apparatus comprising the device as described above or a device comprising the preparation method as described above.
  • the infrared imaging device provided by the embodiment of the invention has higher light-sensing light-emitting efficiency, small volume, light weight, light weight and portability.

Abstract

A light conversion device and a preparation method therefor, and an infrared imaging device. In the light conversion device, a photosensitive component and a light emitting component are disposed in parallel on a substrate and connected by a connecting component. When the device is in an operating state, the photosensitive component converts an input non-visible light signal into photogenerated electrons, and the photogenerated electrons are injected into the light emitting component by means of the connecting component. The photogenerated electrons injected into the light emitting component drive the light emitting component to emit visible light, such that the device has highly efficient light-sensing and light-emitting capabilities. Further, due to the compact structure, small size, and light weight of the device, the device meets requirements for the preparation of portable infrared imaging devices. The preparation method for the light conversion device includes a simple preparation process and is suitable for large-scale manufacturing.

Description

光转换的器件及其制备方法、红外成像设备Light conversion device and preparation method thereof, infrared imaging device 技术领域Technical field
本发明属于显示器件领域，尤其涉及一种光转换的器件及其制备方法、红外成像设备。The invention belongs to the field of display devices, and in particular relates to a device for light conversion, a preparation method thereof and an infrared imaging device.
背景技术Background technique
红外成像技术已经在医疗、军事、夜视、卫星以及民用等领域有着重要应用，一直是科学研究的一个热点。近几十年来，科研工作者们提出了可实现低频率的红外光到较高频的近红外或者高频率的可见光转换成像装置。Infrared imaging technology has been used in medical, military, night vision, satellite and civilian applications, and has always been a hot spot in scientific research. In recent decades, researchers have proposed near-infrared or high-frequency visible-light conversion imaging devices that can achieve low-frequency infrared light to higher frequencies.
通常的红外-可见转换成像装置（或者光子能量上转换装置）是基于硅材料和光电倍增管的装置，装置的体积大，当其作为可穿戴的夜视装置时，存在耗电高、便携性差的缺点。为了改善前述的缺点，研究者开始转向于研究基于薄膜的夜视装置。其中较近期的一项改进是将感光和发光材料整合至一个像素中并用一个有增益功能的漏栅晶体管连接感光和发光部分，形成一个复杂的叠层结构。然而，这样的器件虽具有薄膜厚度、透明和外量子效率较高的特点，但由于器件结构复杂、工艺难度高，实现较大面积的复制是十分困难的。A typical infrared-visible conversion imaging device (or photon energy up-conversion device) is a device based on a silicon material and a photomultiplier tube. The device is bulky, and when it is used as a wearable night vision device, it has high power consumption and poor portability. Shortcomings. In order to improve the aforementioned shortcomings, researchers began to turn to the study of film-based night vision devices. A more recent improvement is the integration of photosensitive and luminescent materials into a single pixel and the connection of the photosensitive and illuminating portions with a gain-functioning drain gate transistor to form a complex laminate structure. However, such a device has the characteristics of high film thickness, transparency, and high external quantum efficiency. However, due to the complicated structure of the device and the high process difficulty, it is very difficult to achieve large-area copying.
因此，现有的红外-可见转换成像装置存在耗电高、便携性差、结构复杂、工艺难度高、生产成本高、难以实现较大面积的复制以及难以获得较高增益的问题。Therefore, the existing infrared-visible conversion imaging device has problems of high power consumption, poor portability, complicated structure, high process difficulty, high production cost, difficulty in realizing large-area copying, and difficulty in obtaining high gain.
技术问题technical problem
本发明的目的在于提供一种光转换的器件及其制备方法、红外成像设备，旨在解决因此，现有的红外-可见转换成像装置存在耗电高、便携性差、结构复杂、工艺难度高、生产成本高、难以实现较大面积的复制以及难以获得较高增益的问题。An object of the present invention is to provide a device for optical conversion, a method for fabricating the same, and an infrared imaging device, which are intended to solve the problem. Therefore, the existing infrared-visible conversion imaging device has high power consumption, poor portability, complicated structure, and high process difficulty. The production cost is high, it is difficult to achieve copying of a large area, and it is difficult to obtain a high gain.
技术解决方案Technical solution
为实现上述发明目的，本发明采用的技术方案如下：In order to achieve the above object, the technical solution adopted by the present invention is as follows:
本发明提供了一种光转换的器件，所述器件包括：The present invention provides a light converting device, the device comprising:
衬底；Substrate
连接部件；Connecting component
设置在所述衬底和所述连接部件之间的且并列设置的感光部件和发光部件；a photosensitive member and a light-emitting member disposed between the substrate and the connecting member and juxtaposed;
其中，所述感光部件和所述发光部件通过所述连接部件连接。Wherein the photosensitive member and the light-emitting member are connected by the connecting member.
本发明还提供了一种光转换的器件的制备方法，所述制备方法包括以下步骤：The invention also provides a method for preparing a light conversion device, the preparation method comprising the following steps:
在衬底上形成并列设置的感光部件和发光部件；Forming a photosensitive member and a light emitting member arranged side by side on the substrate;
在所述感光部件上表面和所述发光部件上表面设置连接部件，使所述感光部件和所述发光部件通过连接部件连接。A connecting member is disposed on the upper surface of the photosensitive member and the upper surface of the light emitting member, and the photosensitive member and the light emitting member are connected by a connecting member.
本发明还提供了一种红外成像设备，所述红外成像设备包括如上所述的器件或包括如上所述的制备方法制备得到的器件。The present invention also provides an infrared imaging apparatus comprising the device as described above or a device comprising the preparation method as described above.
有益效果Beneficial effect
本发明提供的光转换的器件，通过将感光部件和发光部件采取衬底上并列设置并通过连接部件将感光部件和发光部件连接的方式，器件结构更加紧凑、厚度薄、体积小。本发明光转换的器件更适合打印制备，打印制备层数较少，制备效率更高，且具有明显更高的良率。采用本发明的器件制作得到红外成像设备重量轻，适宜穿戴。本发明提供的光转换的器件的制备方法，制备工艺简单，成本低，可实现大面积生产。The light-converting device provided by the present invention has a device structure that is more compact, thin, and small in size by arranging the photosensitive member and the light-emitting member in parallel on the substrate and connecting the photosensitive member and the light-emitting member through the connecting member. The light-converting device of the invention is more suitable for printing preparation, has fewer printing preparation layers, is more efficient in preparation, and has a significantly higher yield. The infrared imaging device produced by using the device of the invention is light in weight and suitable for wearing. The preparation method of the light conversion device provided by the invention has the advantages of simple preparation process, low cost and large-area production.
附图说明DRAWINGS
图1是本发明的实施例提供的光转换的器件的结构示意图；1 is a schematic structural diagram of a light conversion device according to an embodiment of the present invention;
图2是本发明的实施例提供的对应图1的光转换的器件的具体结构示意图；FIG. 2 is a schematic diagram of a specific structure of a device corresponding to the light conversion of FIG. 1 according to an embodiment of the present invention; FIG.
图3是本发明的实施例提供的对应图2的空穴流及电子流工作原理示意图；3 is a schematic diagram showing the working principle of the hole current and the electron flow corresponding to FIG. 2 according to an embodiment of the present invention;
图4是本发明的实施例提供的对应图3的空穴流及电子流工作原理示意图；4 is a schematic diagram showing the working principle of the hole current and the electron current corresponding to FIG. 3 according to an embodiment of the present invention;
图5是本发明的实施例提供的光转换的器件的另一种结构示意图；FIG. 5 is another schematic structural diagram of a light conversion device according to an embodiment of the present invention; FIG.
图6是本发明的实施例提供的一种感光部件和发光部件组成的像素排列示意图；6 is a schematic diagram of a pixel arrangement of a photosensitive member and a light-emitting component according to an embodiment of the present invention;
图7是本发明的实施例提供的另一种感光部件和发光部件组成的像素排列示意图；FIG. 7 is a schematic diagram of a pixel arrangement of another photosensitive member and a light-emitting component according to an embodiment of the present invention; FIG.
图8是本发明的实施例提供的对应图1的感光部件的多层结构、能带结构及原理示意图；FIG. 8 is a schematic diagram showing the multilayer structure, energy band structure and principle of the photosensitive member of FIG. 1 according to an embodiment of the present invention; FIG.
图9是本发明的实施例提供的光转换的器件的另一种结构示意图；FIG. 9 is another schematic structural diagram of a light conversion device according to an embodiment of the present invention; FIG.
图10是本发明的实施例提供的光转换的器件的连接部件的一种结构示意图；FIG. 10 is a schematic structural diagram of a connecting component of a light conversion device according to an embodiment of the present invention; FIG.
图11是本发明的实施例提供的光转换的器件的连接部件的另一种结构示意图；11 is another schematic structural view of a connecting member of a light conversion device according to an embodiment of the present invention;
图12是本发明的实施例提供的双极性晶体管为PNP半导体结构的等效电路示意图；12 is a schematic diagram showing an equivalent circuit of a PNP semiconductor structure provided by an embodiment of the present invention;
图13是本发明的实施例提供的光转换的器件的连接部件的又一种结构示意图。Figure 13 is a block diagram showing still another structure of a connecting member of a light-converting device according to an embodiment of the present invention.
本发明的实施方式Embodiments of the invention
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
在本发明的描述中，需要理解的是，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。In the description of the present invention, it is to be understood that the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first" and "second" may include one or more of the features either explicitly or implicitly. In the description of the present invention, the meaning of "a plurality" is two or more unless specifically and specifically defined otherwise.
请参阅图1，图1为本发明实施例提供的光转换的器件的结构示意图。该器件用于非可见光与可见光的转换，包括：衬底1、连接部件2、设置在衬底1和连接部件2之间的且并列设置的感光部件3和发光部件4，其中，感光部件3和发光部件4通过所述连接部件2连接。Please refer to FIG. 1. FIG. 1 is a schematic structural diagram of a device for optical conversion according to an embodiment of the present invention. The device is used for conversion of non-visible light and visible light, comprising: a substrate 1, a connecting member 2, a photosensitive member 3 disposed between the substrate 1 and the connecting member 2 and juxtaposed, and a light-emitting member 4, wherein the photosensitive member 3 The light-emitting component 4 is connected to the connecting component 2.
通过将感光部件3和发光部件4采取衬底1上并列设置并通过连接部件2将感光部件3和发光部件4连接的方式，器件结构更加紧凑、厚度薄、体积小；由于感光部件3和发光部件4并列设置，排布更合理，打印制备层数较少，本发明光转换的器件更适合打印制备，制备效率更高，且具有明显更高的良率。By accommodating the photosensitive member 3 and the light-emitting member 4 in parallel on the substrate 1 and connecting the photosensitive member 3 and the light-emitting member 4 through the connecting member 2, the device structure is more compact, thin, and small in size; The components 4 are arranged side by side, the arrangement is more reasonable, and the number of print preparation layers is small. The light conversion device of the invention is more suitable for printing preparation, has higher preparation efficiency, and has a significantly higher yield.
通过连接部件2将感光部件3和发光部件4连接，器件在工作状态时，感光部件3将输入的非可见光信号转化为光生电子，光生电子通过所述连接部件2注入发光部件4，驱动发光部件发出可见光。在本发明实施例中，衬底1的选用不受限制，可以采用柔性基板，也可以采用硬质基板。衬底1优选为透光性较好的玻璃基板或者柔性基板，衬底1材料对不可见波段的吸收能力较小，以保证进入器件的不可见光的信号强度不被衬底1削弱。本发明的感光部件3，例如可以是一种量子点感光部件，因为量子点发光器件有更低的驱动电压，能耗更低；采用量子点材料制备得到的器件使用寿命更长和对环境有更好的耐受性。The photosensitive member 3 and the light-emitting member 4 are connected by the connecting member 2, and when the device is in an operating state, the photosensitive member 3 converts the input non-visible light signal into photogenerated electrons, and the photogenerated electrons are injected into the light-emitting member 4 through the connecting member 2 to drive the light-emitting member Emit visible light. In the embodiment of the present invention, the selection of the substrate 1 is not limited, and a flexible substrate or a rigid substrate may be employed. The substrate 1 is preferably a glass substrate or a flexible substrate having a good light transmittance, and the material of the substrate 1 has a small absorption capacity for an invisible wavelength band to ensure that the signal intensity of the invisible light entering the device is not weakened by the substrate 1. The photosensitive member 3 of the present invention may be, for example, a quantum dot photosensitive member because the quantum dot light-emitting device has a lower driving voltage and lower energy consumption; the device prepared by using the quantum dot material has a longer service life and has an environment Better tolerance.
在其中一种实施方式中，通过连接部件2将感光部件3和发光部件4连接，器件在工作状态时，感光部件3将输入的非可见光信号转化为光生电子，光生电子通过所述连接部件2注入发光部件4，并与注入发光部件4的空穴复合后使发光部件4产生光子驱动发光部件发出可见光。本发明的发光部件4为有机发光二极管或者量子点发光二极管等不限于此，优选的采用量子点发光二极管。因为，量子点发光二极管具有更佳的色纯；量子点材料的发光峰明显较窄，在相同发光外量子效率下，可以通过调整发光波长达到比有机材料更大的输出亮度，有利于成像被人眼观测；量子点发光器件有更低的驱动电压，能耗更低；采用量子点材料制备得到的器件使用寿命更长和对环境有更好的耐受性。In one embodiment, the photosensitive member 3 and the light-emitting member 4 are connected by a connecting member 2, and the photosensitive member 3 converts the input non-visible light signal into photogenerated electrons through the connecting member 2 when the device is in an operating state. The light-emitting member 4 is injected and combined with the holes injected into the light-emitting member 4 to cause the light-emitting member 4 to generate a photon-driven light-emitting member to emit visible light. The light-emitting member 4 of the present invention is not limited to an organic light-emitting diode or a quantum dot light-emitting diode, and a quantum dot light-emitting diode is preferably used. Because the quantum dot light-emitting diode has better color purity; the quantum dot material has a significantly narrower luminescence peak. Under the same external quantum efficiency, the emission wavelength can be adjusted to achieve a larger output brightness than the organic material, which is advantageous for imaging. Human eye observation; quantum dot light-emitting devices have lower driving voltage and lower energy consumption; devices fabricated using quantum dot materials have longer lifetime and better tolerance to the environment.
在其中一种实施方式中，所述连接部件为第一电极或增益部件，具体可以是常规的导体或具有增益功能的连接部件（如晶体管）。In one embodiment, the connecting member is a first electrode or a gain member, and may be a conventional conductor or a connecting member having a gain function (such as a transistor).
具体地，当所述连接部件为第一电极时，所述感光部件包括叠层设置于所述衬底上的第二电极和依次层叠于所述第二电极上的第一电子传输层、第一吸光层、第二电子传输层。该实施例中，通过将感光部件和发光部件采取衬底上并列、电路上背靠背串联的方式进行组合的同时，将感光部件设置为具有层叠设置的第二电极、第一电子传输层、第一吸光层、第二电子传输层的光导体结构，以此代替现有的二极管结构，这样形成的光导体结构具有高的光探测效率，使得器件具有更高的感光出光效率，同时由于器件的结构紧凑、体积小、重量轻，因而满足了器件便携式成像的要求；并且由于每个像素的结构简单、工艺难度低，使得每一个像素都适合现有的打印制备工艺，降低成本，可实现大面积的复制。此时，感光部件形成方法如下：在衬底上沉积第二电极，在第二电极上依次沉积第一电子传输层、第一吸光层、第二电子传输层；此时，第一电极是形成于第二电子传输层外表面上。Specifically, when the connecting member is a first electrode, the photosensitive member includes a second electrode laminated on the substrate and a first electron transport layer sequentially stacked on the second electrode, a light absorbing layer and a second electron transport layer. In this embodiment, the photosensitive member and the light-emitting member are combined in such a manner that the substrate is juxtaposed on the substrate and the circuit is back-to-back in series, and the photosensitive member is disposed to have the second electrode, the first electron transport layer, and the first layer. The light-conducting layer and the photoconductor structure of the second electron-transporting layer are used instead of the existing diode structure, so that the formed photoconductor structure has high light-detecting efficiency, so that the device has higher light-sensing light-emitting efficiency, and at the same time, due to the structure of the device Compact, small size and light weight, it meets the requirements of portable imaging of the device; and because each pixel has a simple structure and low process difficulty, each pixel is suitable for the existing printing preparation process, reducing the cost and realizing a large area. Copy. At this time, the photosensitive member is formed as follows: a second electrode is deposited on the substrate, and a first electron transport layer, a first light absorbing layer, and a second electron transport layer are sequentially deposited on the second electrode; at this time, the first electrode is formed On the outer surface of the second electron transport layer.
上述感光部件的多层结构、能带结构及原理示意图如图8所示（其中，305为电子，306为入射光，307为第二电极，308第一电子传输层，309为第一吸光层、310为第二电子传输层），当感光部件工作在光导模式下时，第一吸光层309产生的解离电子305通过改变肖特基势垒的宽度从而调制通过的电子305电流的大小，实现对发光部件电流注入的控制。在无入射光时，第一吸光层309和第一电子传输层308及第一吸光层309和第二电子传输层310之间均形成肖特基势垒，电流很弱；当第一吸光层309吸收光子生成光电子后，肖特基势垒宽度大大降低，使原有的肖特基势垒转变成近似的欧姆接触，电流增大。The multilayer structure, energy band structure and principle schematic diagram of the above photosensitive member are as shown in FIG. 8 (wherein 305 is electron, 306 is incident light, 307 is second electrode, 308 is first electron transport layer, and 309 is first light absorbing layer). 310 is a second electron transport layer), when the photosensitive member operates in the light guide mode, the dissociated electrons 305 generated by the first light absorbing layer 309 modulate the magnitude of the current passing through the electrons 305 by changing the width of the Schottky barrier. Control of current injection into the light-emitting component is achieved. When there is no incident light, a Schottky barrier is formed between the first light absorbing layer 309 and the first electron transport layer 308 and the first light absorbing layer 309 and the second electron transport layer 310, and the current is weak; when the first light absorbing layer After 309 absorbs photons to generate photoelectrons, the Schottky barrier width is greatly reduced, and the original Schottky barrier is converted into an approximate ohmic contact, and the current is increased.
在本发明所述连接部件为第一电极的实施例中，第一电极将感光部件和发光部件串联相接，为了使第一电极对不可见波段光的透过率尽可能低，以防止进入器件的不可见光信号通过第一电极外泄而降低不可见光的信号强度，因此，第一电极为不透明电极 。而为了使发光部件能够有效发光，第一电极仅是覆盖发光部件的局部区域，优选地，第一电极仅覆盖发光部件上表面靠近吸光部件的5%的区域。 In the embodiment in which the connecting member of the present invention is the first electrode, the first electrode connects the photosensitive member and the light emitting member in series, so as to prevent the first electrode from transmitting light in the invisible band as low as possible to prevent entry. The invisible light signal of the device is leaked through the first electrode to reduce the signal intensity of the invisible light, and therefore, the first electrode is an opaque electrode . In order to enable the light-emitting part to emit light efficiently, the first electrode is only a partial area covering the light-emitting part. Preferably, the first electrode covers only the upper surface of the light-emitting part close to 5% of the light-absorbing part.
具体地，当所述连接部件为增益部件时，通过将感光部件和发光部件采取衬底上并列设置，并通过增益部件将感光部件和发光部件连接的方式，器件结构更加紧凑、厚度薄、体积小；由于感光部件和发光部件并列设置，排布更合理，打印制备层数较少，本发明光转换的器件更适合打印制备，制备效率更高，且具有明显更高的良率。Specifically, when the connecting member is a gain member, the device structure is more compact, thin, and bulk by taking the photosensitive member and the light-emitting member side by side on the substrate and connecting the photosensitive member and the light-emitting member through the gain member. Small; since the photosensitive member and the light-emitting member are arranged side by side, the arrangement is more reasonable, and the number of print preparation layers is small, the light-converting device of the present invention is more suitable for printing preparation, has higher preparation efficiency, and has a significantly higher yield.
在其中一种具体实施方式中，所述增益部件可以为双极性晶体管，所述双极性晶体管的基极连接所述感光部件上表面，所述双极性晶体管的发射极连接所述发光部件上表面。在其中一种具体实施方式中，增益部件为NPN或PNP的双极性晶体管，双极性晶体管的基极连接感光部件的上表面，双极性晶体管的发射极连接发光部件的上表面，双极性晶体管的集电极接地。具体地，当增益部件为NPN的双极性晶体管时（参见图10），用p型半导体连接感光部件上表面和发光部件上表面，p型半导体、感光部件和发光部件的被n型半导体覆盖；当增益部件为PNP的双极性晶体管时（参见图11），用n型半导体连接感光部件上表面和发光部件上表面，n型半导体、感光部件和发光部件的被p型半导体覆盖。In one embodiment, the gain component may be a bipolar transistor, a base of the bipolar transistor is connected to an upper surface of the photosensitive member, and an emitter of the bipolar transistor is connected to the light emitting The upper surface of the part. In one embodiment, the gain component is an NPN or PNP bipolar transistor, the base of the bipolar transistor is connected to the upper surface of the photosensitive member, and the emitter of the bipolar transistor is connected to the upper surface of the light emitting component. The collector of the polarity transistor is grounded. Specifically, when the gain member is a NPN bipolar transistor (see FIG. 10), the upper surface of the photosensitive member and the upper surface of the light emitting member are connected by a p-type semiconductor, and the p-type semiconductor, the photosensitive member, and the light-emitting member are covered by the n-type semiconductor. When the gain member is a PNP bipolar transistor (see FIG. 11), the upper surface of the photosensitive member and the upper surface of the light emitting member are connected by an n-type semiconductor, and the n-type semiconductor, the photosensitive member, and the light-emitting member are covered by a p-type semiconductor.
以双极性晶体管为PNP半导体结构为例，如图12所示，反向偏压的感光部件3工作在光伏模式下，感光部件3内的吸光层产生的光生电子通过增益部件（即连接部件2的优选实施例）增益后注入发光层，并与注入发光部件4的空穴复合在发光层产生光子，以此实现器件的增益效果，使得器件具有更高的感光出光效率。Taking the bipolar transistor as a PNP semiconductor structure as an example, as shown in FIG. 12, the reverse biased photosensitive member 3 operates in a photovoltaic mode, and the photogenerated electrons generated by the light absorbing layer in the photosensitive member 3 pass through the gain member (ie, the connecting member). The preferred embodiment of 2) is injected into the light-emitting layer after gain, and is combined with the holes injected into the light-emitting member 4 to generate photons in the light-emitting layer, thereby realizing the gain effect of the device, so that the device has higher light-sensing light-emitting efficiency.
在其中一种具体实施方式中，所述增益部件也可以为包括岛状导体与n型半导体的混合结构，所述岛状导体分布在所述发光部件和所述感光部件上表面，所述岛状导体、所述感光部件上表面和所述发光部件上表面被所述n型半导体覆盖。增益部件为包括岛状导体与n型半导体混合结构的信号放大部件，具体地，参见图13，在感光部件3上表面和发光部件4上表面分布形成岛状导体，岛状导体、感光部件3上表面和发光部4件上表面被所述n型半导体覆盖，通过n型半导体将感光部件和发光部件连接。其中，导体可以是金属导体（如铝）或者简并半导体，n型半导体可采用C60但不限于此。In one embodiment, the gain member may also be a hybrid structure including an island-shaped conductor and an n-type semiconductor, the island-shaped conductor being distributed on the upper surface of the light-emitting member and the photosensitive member, the island The shape conductor, the upper surface of the photosensitive member, and the upper surface of the light emitting member are covered by the n-type semiconductor. The gain member is a signal amplifying member including an island-shaped conductor and an n-type semiconductor hybrid structure. Specifically, referring to FIG. 13, an island-shaped conductor, an island-shaped conductor, and a photosensitive member 3 are distributed on the upper surface of the photosensitive member 3 and the upper surface of the light-emitting member 4. The upper surface and the upper surface of the light-emitting portion 4 are covered by the n-type semiconductor, and the photosensitive member and the light-emitting member are connected by an n-type semiconductor. Wherein, the conductor may be a metal conductor such as aluminum or a degenerate semiconductor, and the n-type semiconductor may adopt C60 but is not limited thereto.
采用上述包括岛状导体与n型半导体混合结构的增益部件，增益可达到10 5%为例，通常的，感光部件3的外量子效率为5%，单个发光单元的外量子效率为20%，N个发光单元的外量子效率为N×20%，当将连接部件2设置为双极性晶体管的增益部件，在N个发光单元下，此时获得的入射不可见光子-出射可见光子的转化效率为三者的乘积，即10×N。从感光部件入射一个不可见光子，会有10×N个可见光子从发光部件出射。 Taking the gain component including the hybrid structure of the island-shaped conductor and the n-type semiconductor, the gain can be up to 10 5 %. Generally, the external quantum efficiency of the photosensitive member 3 is 5%, and the external quantum efficiency of the single light-emitting unit is 20%. The external quantum efficiency of the N light-emitting units is N×20%. When the connecting member 2 is set as the gain component of the bipolar transistor, under the N light-emitting units, the incident non-photo-detecting-extracting visible light is obtained at this time. The efficiency is the product of the three, that is, 10 × N. When a non-photo-detecting element is incident from the photosensitive member, 10 × N visible light particles are emitted from the light-emitting member.
进一步地，所述发光部件包括设置在所述衬底上的第三电极、叠层设置在所述第三电极上的至少两个发光单元以及设置在各相邻的两个发光单元之间的载流子生成层。图9为本发明实施例提供的光转换的器件的结构示意图。图9中该光转换的器件包括：衬底1、设置在衬底1上的连接部件2、设置在衬底1和连接部件2之间的且并列设置的感光部件3和发光部件4。其中，感光部件3和发光部件4通过连接部件2连接。发光部件4包括设置在衬底1上的第三电极405、叠层设置在第三电极上的至少两个发光单元（当为两个发光单元时，发光单元分别为第一发光单元406、第二发光单元408）以及设置在相邻发光单元之间的载流子生成层407。Further, the light emitting part includes a third electrode disposed on the substrate, at least two light emitting units stacked on the third electrode, and disposed between each adjacent two light emitting units Carrier generation layer. FIG. 9 is a schematic structural diagram of a device for optical conversion according to an embodiment of the present invention. The light-converting device in Fig. 9 includes a substrate 1, a connecting member 2 provided on the substrate 1, a photosensitive member 3 and a light-emitting member 4 which are disposed between the substrate 1 and the connecting member 2 and are juxtaposed. Among them, the photosensitive member 3 and the light-emitting member 4 are connected by the connecting member 2. The light emitting part 4 includes a third electrode 405 disposed on the substrate 1 and at least two light emitting units stacked on the third electrode (when the two light emitting units are used, the light emitting unit is the first light emitting unit 406, respectively) The two light emitting units 408) and the carrier generation layer 407 disposed between the adjacent light emitting units.
所述发光单元（即第一发光单元406或第二发光单元408）包括第一空穴传输层、第一发光层以及第三电子传输层，所述第一发光层设置在所述第一空穴传输层和所述第三电子传输层之间，所述第一空穴传输层靠近所述第一电极设置，所述第三电子传输层靠近所述连接部件设置。两个或者多个发光单元形成叠层串联的结构进一步增加发光部件4的电流效率，即感光部件3提供相同电流的情况下，发光部件4成倍输出可见光。The light emitting unit (ie, the first light emitting unit 406 or the second light emitting unit 408) includes a first hole transporting layer, a first light emitting layer, and a third electron transporting layer, and the first light emitting layer is disposed in the first empty layer Between the hole transport layer and the third electron transport layer, the first hole transport layer is disposed adjacent to the first electrode, and the third electron transport layer is disposed adjacent to the connecting member. The structure in which two or more light-emitting units are formed in series in series further increases the current efficiency of the light-emitting member 4, that is, in the case where the photosensitive member 3 supplies the same current, the light-emitting member 4 doubles the output of visible light.
进一步地，上述载流子生成层为pn结结构。具体地，在物理模型上，载流子生成层相当于一个结区两边都被高度掺杂的pn结，该pn结处在两个发光单元之间：n型半导体与一个发光单元的电子传输层相连；p型半导体与另一个发光单元的空穴传输层相连，以促进发光单元之间载流子的生成以及传输。作为其中的一种实施例，当发光单元为两个时，载流子生成层叠层设置于电子传输层和空穴传输层之间。更具体地，载流子生成层为pn结结构，其中n型半导体层与电子传输层相连，p型半导体层与空穴传输层相连。其中，n型半导体层具体可以为但不限于掺杂或非掺杂的氧化物半导体和带n型掺杂的有机半导体；p型半导体层具体可以为但不限于掺杂或非掺杂的氧化物半导体和带p型掺杂的有机半导体。其中，上述发光部件的形成步骤如下：在衬底上沉积第三电极；在第三电极上往连接部件方向依次沉积发光单元、载流子生成层、发光单元，重复重复所述沉积发光单元、载流子生成层、发光单元的步骤，重复次数根据实际设计进行调整，至完成预定个数的发光单元的沉积。总而言之，当完成发光部件的形成步骤时，发光单元的个数高于载流子生成层的层数1个数值。在其中一种实施例中，发光单元的形成步骤包括：在第三电极往连接部件方向沉积第一空穴传输层、第一发光层以及第三电子传输层。Further, the carrier generation layer is a pn junction structure. Specifically, in the physical model, the carrier generation layer corresponds to a highly doped pn junction on both sides of the junction region, the pn junction being between two light emitting units: electron transport of the n-type semiconductor and one light emitting unit The layers are connected; the p-type semiconductor is connected to the hole transport layer of the other light-emitting unit to facilitate the generation and transport of carriers between the light-emitting units. As one of the embodiments, when the light-emitting units are two, the carrier-generating layer stack is disposed between the electron transport layer and the hole transport layer. More specifically, the carrier generation layer is a pn junction structure in which an n-type semiconductor layer is connected to an electron transport layer, and a p-type semiconductor layer is connected to a hole transport layer. The n-type semiconductor layer may specifically be, but not limited to, a doped or undoped oxide semiconductor and an n-type doped organic semiconductor; the p-type semiconductor layer may specifically be, but not limited to, doped or undoped oxidation. Semiconductors and organic semiconductors with p-type doping. The step of forming the light-emitting component is as follows: depositing a third electrode on the substrate; depositing a light-emitting unit, a carrier generation layer, and a light-emitting unit in the direction of the connecting member on the third electrode, repeating the deposition of the light-emitting unit, The steps of the carrier generation layer and the light-emitting unit are adjusted according to the actual design to complete deposition of a predetermined number of light-emitting units. In summary, when the step of forming the light-emitting member is completed, the number of light-emitting units is higher than the number of layers of the carrier-generating layer by one value. In one embodiment, the step of forming the light emitting unit includes depositing the first hole transport layer, the first light emitting layer, and the third electron transport layer toward the connecting member in the third electrode.
在其中一种具体的实施方式中，请参阅图2，感光部件3包括第四电极301、第二空穴传输层302、第二吸光层303、第四电子传输层304，第四电极301设置在衬底1上，从第四电极301至连接部件2的结构顺序为第二空穴传输层302、第二吸光层303、第四电子传输层304；发光部件4包括第五电极401、第三空穴传输层402、第二发光层403、第五电子传输层404，第五电极401设置在衬底上1，从第五电极401至连接部件2的结构顺序为第三空穴传输层402、第二发光层403、第五电子传输层404。In one specific embodiment, referring to FIG. 2, the photosensitive member 3 includes a fourth electrode 301, a second hole transport layer 302, a second light absorbing layer 303, a fourth electron transport layer 304, and a fourth electrode 301. On the substrate 1, the structural order from the fourth electrode 301 to the connecting member 2 is the second hole transporting layer 302, the second light absorbing layer 303, and the fourth electron transporting layer 304; the light emitting part 4 includes a fifth electrode 401, The third hole transport layer 402, the second light emitting layer 403, and the fifth electron transport layer 404, the fifth electrode 401 is disposed on the substrate 1, and the structure from the fifth electrode 401 to the connecting member 2 is a third hole transport layer. 402, second light emitting layer 403, fifth electron transport layer 404.
具体地，第四电极301沉积在衬底1上，第四电极301的材料可以是传统的阳极材料，用于接地。优选地，可以是氧化铟锡（ITO），其对非可见波段光的透过率能够达到80%以上，可以保证透过衬底1及ITO以后进入感光部件3的非可见光的信号强度削弱较少甚至不被削弱。具体地，第五电极401沉积在衬底1上，第五电极401的材料可以是传统的阳极材料，用于连接电流源。优选地，可以是氧化铟锡（ITO），其对非可见波段光的透过率能够达到80%以上，可以保证透过衬底1及ITO以后进入感光部件3的非可见光的信号强度削弱较少甚至不被削弱。Specifically, the fourth electrode 301 is deposited on the substrate 1, and the material of the fourth electrode 301 may be a conventional anode material for grounding. Preferably, it may be indium tin oxide (ITO), and the transmittance of light in the non-visible band can reach 80% or more, and the signal intensity of the non-visible light entering the photosensitive member 3 after passing through the substrate 1 and the ITO can be weakened. Less or not weakened. Specifically, the fifth electrode 401 is deposited on the substrate 1, and the material of the fifth electrode 401 may be a conventional anode material for connecting a current source. Preferably, it may be indium tin oxide (ITO), and the transmittance of light in the non-visible band can reach 80% or more, and the signal intensity of the non-visible light entering the photosensitive member 3 after passing through the substrate 1 and the ITO can be weakened. Less or not weakened.
具体地，本发明实施例中，所有空穴传输层（如第一空穴传输层、第二空穴传输层、第三空穴传输层）的材料可以为传统的空穴传输材料，为了提高空穴传输效率，优选地为有机空穴传输材料、氧化物空穴传输材料中的至少一种，其中，有机空穴传输材料可以是聚[双(4-苯基)(4-丁基苯基)胺]、4-丁基-N,N-二苯基苯胺均聚物、苯胺, 4-丁基-N,N-二苯基-, 均聚合物（Poly-TPD）、聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)（TFB）、聚(9-乙烯咔唑)（PVK）、TPD、Spiro-TPD、LG101、HAT-CN、PEDOT:PSS、TAPC、a-NPB、m-MTDATA中至少的一种；氧化物空穴传输材料可以是NixO、MoOx、VOx、WOx中的至少一种。Specifically, in the embodiment of the present invention, materials of all hole transport layers (such as the first hole transport layer, the second hole transport layer, and the third hole transport layer) may be conventional hole transport materials, in order to improve The hole transporting efficiency is preferably at least one of an organic hole transporting material and an oxide hole transporting material, wherein the organic hole transporting material may be poly[bis(4-phenyl)(4-butylbenzene) Amine], 4-butyl-N,N-diphenylaniline homopolymer, aniline, 4-butyl-N,N-diphenyl-, homopolymer (Poly-TPD), poly(9) , 9-dioctylfluorene-CO-N-(4-butylphenyl)diphenylamine) (TFB), poly(9-vinylcarbazole) (PVK), TPD, Spiro-TPD, LG101, HAT-CN And PEDOT: at least one of PSS, TAPC, a-NPB, and m-MTDATA; and the oxide hole transporting material may be at least one of NixO, MoOx, VOx, and WOx.
具体地，本发明实施例中：第一吸光层沉积在第一电子传输层上，第二吸光层沉积在第二空穴传输层上，吸光层用于吸收非可见波段的入射光，比如近红外波段。为了提高第一吸光层或第二吸光层的吸光效率，第一吸光层或第二吸光层的厚度优选为10nm-100nm。第一吸光层和第二吸光层具体以无机半导体纳米晶作为吸光材料，优选地包括但不限于II-VI族半导体纳米晶、III-V族半导体纳米晶、II-V族半导体纳米晶、III-VI族半导体纳米晶、IV-VI族半导体纳米晶、I-III-VI族半导体纳米晶、II-IV-VI族半导体纳米晶、IV族单质半导体发光材料中的至少一种。其中，II-VI族半导体纳米晶可以是PbS、PbSe、PbTe中的至少一种，或其他二元、三元、四元的II-VI化合物；III-V族半导体纳米晶可以是InAs、InGaAs中的至少一种，或其他二元、三元、四元的III-V化合物。Specifically, in the embodiment of the present invention, the first light absorbing layer is deposited on the first electron transport layer, the second light absorbing layer is deposited on the second hole transport layer, and the light absorbing layer is used for absorbing incident light in the non-visible band, such as near Infrared band. In order to increase the light absorption efficiency of the first light absorbing layer or the second light absorbing layer, the thickness of the first light absorbing layer or the second light absorbing layer is preferably from 10 nm to 100 nm. The first light absorbing layer and the second light absorbing layer are specifically made of inorganic semiconductor nanocrystals as light absorbing materials, preferably including but not limited to II-VI semiconductor nanocrystals, III-V semiconductor nanocrystals, II-V semiconductor nanocrystals, III At least one of a Group VI semiconductor nanocrystal, an IV-VI semiconductor nanocrystal, an I-III-VI semiconductor nanocrystal, a II-IV-VI semiconductor nanocrystal, and a Group IV elemental semiconductor luminescent material. The II-VI semiconductor nanocrystals may be at least one of PbS, PbSe, PbTe, or other binary, ternary, and quaternary II-VI compounds; the III-V semiconductor nanocrystals may be InAs, InGaAs At least one of them, or other binary, ternary, quaternary III-V compounds.
具体地，本发明实施例中，所有电子传输层（如第一电子传输层、第二电子传输层、第三电子传输层、第四电子传输层、第五电子传输层）的材料可以为传统的电子传输层材料，为了提高电子传输效率，优选地为宽带隙氧化物电子传输材料、宽带隙硫化物（及其纳米材料）电子传输材料，比如：ZnO，ZnS，TiO 2等；或者为有机电子传输材料，比如菲咯啉（BPHEN），Alq 3等。 Specifically, in the embodiment of the present invention, the materials of all the electron transport layers (such as the first electron transport layer, the second electron transport layer, the third electron transport layer, the fourth electron transport layer, and the fifth electron transport layer) may be conventional. The electron transport layer material is preferably a wide band gap oxide electron transport material, a wide band gap sulfide (and a nano material thereof) electron transport material such as ZnO, ZnS, TiO 2 or the like in order to improve electron transport efficiency; or organic Electron transport materials such as phenanthroline (BPHEN), Alq 3, and the like.
具体地，本发明实施例中：第一发光层沉积在第一空穴传输层上，第二发光层沉积在第三空穴传输层上，发光层用于发射可见光，比如绿光波段。为了提高发光层的发光效率，第一发光层和第二发光层的厚度优选为10nm-100nm。发光层具体以无机半导体纳米晶作为电致发光材料，优选地包括但不限于II-VI族半导体纳米晶、III-V族半导体纳米晶、II-V族半导体纳米晶、III-VI族半导体纳米晶、IV-VI族半导体纳米晶、I-III-VI族半导体纳米晶、II-IV-VI族半导体纳米晶、IV族单质、有机发光材料中的至少一种。其中，II-VI族半导体纳米晶可以是CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、CdZnS、CdZnSe、CdZnSeS中的至少一种，或其他二元、三元、四元的II-VI化合物；III-V族半导体纳米晶可以是GaP、GaAs、InP、InAs中的至少一种，或其他二元、三元、四元的III-V化合物；有机发光材料包括有机荧光发光材料、有机磷光发光材料中的至少一种。优选地，当发光层403采用无机半导体纳米晶作为发光材料，相比有机发光材料来说，采用纳米晶材料作为发光材料具有更佳的色纯；其次，由于纳米晶材料的发光峰明显较窄，在相同发光外量子效率下可以通过调整发光波长达到比有机材料更大的输出亮度，有利于成像被人眼观测；此外，纳米晶材料作为发光材料使得器件有更低的驱动电压，降低能耗；还有，纳米晶材料可以实现实施例中展示的全无机材料组成的结构，从而提高器件的使用寿命和对环境的耐受性。Specifically, in the embodiment of the invention, the first luminescent layer is deposited on the first hole transport layer, the second luminescent layer is deposited on the third hole transport layer, and the luminescent layer is used to emit visible light, such as a green light band. In order to increase the luminous efficiency of the light-emitting layer, the thickness of the first light-emitting layer and the second light-emitting layer is preferably from 10 nm to 100 nm. The luminescent layer is specifically an inorganic semiconductor nanocrystal as an electroluminescent material, preferably including but not limited to II-VI semiconductor nanocrystals, III-V semiconductor nanocrystals, II-V semiconductor nanocrystals, III-VI semiconductor nanometers At least one of crystalline, IV-VI semiconductor nanocrystals, I-III-VI semiconductor nanocrystals, II-IV-VI semiconductor nanocrystals, Group IV simple materials, and organic light-emitting materials. Wherein, the II-VI semiconductor nanocrystals may be at least one of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, CdZnS, CdZnSe, CdZnSeS, or other binary, ternary, quaternary II-VI compounds; The III-V semiconductor nanocrystals may be at least one of GaP, GaAs, InP, InAs, or other binary, ternary, quaternary III-V compounds; organic luminescent materials include organic fluorescent materials, organic phosphorescence At least one of the materials. Preferably, when the luminescent layer 403 uses inorganic semiconductor nanocrystals as the luminescent material, the nanocrystalline material is used as the luminescent material to have better color purity than the organic luminescent material; secondly, the luminescent peak of the nanocrystalline material is significantly narrower. Under the same luminous external quantum efficiency, the emission wavelength can be adjusted to achieve a larger output brightness than the organic material, which is beneficial for imaging by the human eye; in addition, the nanocrystalline material as a luminescent material allows the device to have a lower driving voltage and lower energy. Also, the nanocrystalline material can achieve the structure of the all-inorganic material shown in the examples, thereby improving the service life of the device and the tolerance to the environment.
具体地，本发明实施例中，连接部件为第一电极时，可将第一电极作为阴极，沉积在第四电子传输层304和第五电子传输层404上，将感光部件3和发光部件4连接，由此将感光部件3产生的光生电子注入发光部件4，并与注入发光部件4的空穴复合产生光子。具体地，如图3和图4所示（其中，实心球为电子，空心球为空穴），当发光部件4的阳极（第五电极401）连接电流源、感光部件3的阳极（第四电极301）接“地”时，感光部件3在光伏模式下，第二吸光层303产生的光生电子通过公用阴极（第一电极）注入第二发光层403，并与注入发光部件4的阳极的空穴复合在第二发光层403产生光子。Specifically, in the embodiment of the present invention, when the connecting component is the first electrode, the first electrode can be used as a cathode, and deposited on the fourth electron transporting layer 304 and the fifth electron transporting layer 404, and the photosensitive member 3 and the light emitting component 4 are The light is generated by injecting photogenerated electrons generated by the photosensitive member 3 into the light-emitting member 4, and recombines with the holes injected into the light-emitting member 4 to generate photons. Specifically, as shown in FIGS. 3 and 4 (wherein the solid sphere is an electron and the hollow sphere is a hole), when the anode (fifth electrode 401) of the light-emitting member 4 is connected to the current source and the anode of the photosensitive member 3 (fourth When the electrode 301) is connected to the ground, the photo-generated component 3 is in the photovoltaic mode, and the photo-generated electrons generated by the second light-absorbing layer 303 are injected into the second light-emitting layer 403 through the common cathode (first electrode), and injected into the anode of the light-emitting component 4 The hole recombination generates photons in the second luminescent layer 403.
在其中一种实施方式中，感光部件3和发光部件4并列且隔离设置在衬底1和连接部件2之间，感光部件3和发光部件4彼此之间独立隔开，通过连接部件2连接，感光部件3和发光部件4分别用于吸收非可见波段的入射光和发射可见波段的出射光。感光部件3和发光部件4图案化分布在衬底1上，形成感光部件和发光部件的成像阵列，将非可见光转换成可见光。由于感光部件3和发光部件4独立隔开，成像阵列的成像单元分开排列，使得阵列的分布更适应打印设备，从而使器件的制备具有更高的良率。In one embodiment, the photosensitive member 3 and the light-emitting member 4 are juxtaposed and isolated between the substrate 1 and the connecting member 2, and the photosensitive member 3 and the light-emitting member 4 are separated from each other and connected by the connecting member 2, The photosensitive member 3 and the light-emitting member 4 are respectively for absorbing incident light of a non-visible band and emitting light of a visible wavelength band. The photosensitive member 3 and the light-emitting member 4 are pattern-distributed on the substrate 1, forming an imaging array of the photosensitive member and the light-emitting member, and converting non-visible light into visible light. Since the photosensitive member 3 and the light-emitting member 4 are independently spaced, the imaging units of the imaging array are arranged separately, so that the distribution of the array is more adapted to the printing apparatus, thereby making the preparation of the device have a higher yield.
其中，感光部件3和发光部件4彼此之间独立隔开可以通过空间上的隔离，也可以通过设置隔离介质层隔离划分感光部件3和发光部件4（请参阅图5），以增强图案化。图案化分布的成像阵列，可以为发光部件4与感光部件3在数量上按一比一或一比多的方式并列隔离设置在衬底1上。Wherein, the photosensitive member 3 and the light-emitting member 4 are separated from each other by spatial isolation, and the photosensitive member 3 and the light-emitting member 4 (see FIG. 5) may be partitioned by providing an isolation dielectric layer to enhance patterning. The imaged array of the patterned distribution may be disposed side by side on the substrate 1 in such a manner that the light-emitting part 4 and the photosensitive member 3 are juxtaposed in number one by one or more.
应当理解的是，所述一比一或一比多的方式是一种数量的比例关系，并非对数量的严格限定，例如可以理解的是，按一比多的方式并列设置时，器件上可以并列设置有一个发光部件4和多个感光部件3，或者器件上可以并列设置有多个发光部件4和多个感光部件3，只是发光部件4数量要多于感光部件3的数量。It should be understood that the one-to-one or one-to-many ratio is a proportional relationship, and is not strictly limited in quantity. For example, it can be understood that when juxtaposed in a one-to-many manner, the device can be A light-emitting member 4 and a plurality of photosensitive members 3 are arranged side by side, or a plurality of light-emitting members 4 and a plurality of photosensitive members 3 may be arranged side by side on the device, except that the number of the light-emitting members 4 is larger than the number of the photosensitive members 3.
如图3所示，感光部件3和发光部件4以1:1的比例分布（图6中，6001代表感光部件3和发光部件4以1:1的比例分布的像素单元，其中，6002代表一感光部件3，6003代表一发光部件4）。As shown in FIG. 3, the photosensitive member 3 and the light-emitting member 4 are distributed in a ratio of 1:1 (in FIG. 6, 6001 represents a pixel unit in which the photosensitive member 3 and the light-emitting member 4 are distributed in a ratio of 1:1, wherein 6002 represents one The photosensitive member 3, 6003 represents a light-emitting member 4).
当发光部件4和感光部件3在数量上按一比多的方式并列隔离设置在衬底1上时，感光部件3的并联数量应大于发光部件4的并联数量，例如3个感光部件3和1个发光部件4，如图7（图7中，7001代表感光部件和发光部件以3:1的比例分布的像素单元，其中，7002代表一感光部件，7003代表一发光部件）。将多个感光部件3在电路上并联连接后，通过连接部件2与一发光部件4连接或多个并联连接的发光部件4连接，这样的设置可以增加感光部件3对发光部件4的电流供给，使得器件在不增加制备难度的前提下提高发光部件的输出亮度。在保证设备整体输出亮度的合理比例下，将多个感光部件3并联连接后，通过连接部件2与一个发光部件4连接，可以保证单个发光部件器件输出亮度，且制备效率高。When the light-emitting member 4 and the photosensitive member 3 are juxtaposed in isolation on the substrate 1 in a one-to-many manner, the number of parallel connection of the photosensitive members 3 should be greater than the number of parallel connections of the light-emitting members 4, for example, three photosensitive members 3 and 1 The light-emitting members 4 are as shown in Fig. 7 (in Fig. 7, 7001 represents a pixel unit in which the photosensitive member and the light-emitting member are distributed in a ratio of 3:1, wherein 7002 represents a photosensitive member, and 7003 represents a light-emitting member). After the plurality of photosensitive members 3 are connected in parallel on the circuit, the connection member 2 is connected to one of the light-emitting members 4 or a plurality of the light-emitting members 4 connected in parallel, and such an arrangement can increase the current supply of the photosensitive member 3 to the light-emitting member 4. The device is made to increase the output brightness of the light-emitting component without increasing the difficulty of preparation. Under the reasonable ratio of ensuring the overall output brightness of the device, after the plurality of photosensitive members 3 are connected in parallel, and connected to one of the light-emitting members 4 through the connecting member 2, the output luminance of the single light-emitting device can be ensured, and the preparation efficiency is high.
感光部件3和发光部件4的底面连接于衬底1，与该底面相对的一面是感光部件3和发光部件4的上表面，为了使连接部件2对不可见波段光的透过率尽可能高，以防止进入器件的不可见光信号通过连接部件2外泄而降低不可见光的信号强度，因此，连接部件2为不透明电极，优选为金属、导电氧化物、石墨等作为第一电极材料。为了使发光部件4能够发光效率更高，感光部件3的上表面被所述连接部件2的全覆盖，发光部件4的上表面被连接部件2部分覆盖。感光部件3的上表面被连接部件2的全覆盖可以使感光部件3产生的光生电子通过连接部件2充分注入发光部件4发光，为了保证可见光的透光效果，优选地，发光部件4上表面的被连接部件2覆盖的面积不超过发光部件4上表面面积的5%，更优选地，发光部件4上表面的被连接部件2覆盖的面积为是发光部件4上表面面积的2%-3%。The bottom surface of the photosensitive member 3 and the light-emitting member 4 is connected to the substrate 1, and the surface opposite to the bottom surface is the upper surface of the photosensitive member 3 and the light-emitting member 4, in order to make the transmittance of the connecting member 2 to the invisible band light as high as possible. The invisible light signal entering the device is prevented from leaking through the connecting member 2 to reduce the signal intensity of the invisible light. Therefore, the connecting member 2 is an opaque electrode, preferably a metal, a conductive oxide, graphite or the like as the first electrode material. In order to make the light-emitting member 4 more luminous, the upper surface of the photosensitive member 3 is completely covered by the connecting member 2, and the upper surface of the light-emitting member 4 is partially covered by the connecting member 2. The upper surface of the photosensitive member 3 is completely covered by the connecting member 2, so that the photogenerated electrons generated by the photosensitive member 3 can be sufficiently injected into the light-emitting member 4 through the connecting member 2, and in order to ensure the light-transmitting effect of visible light, preferably, the upper surface of the light-emitting member 4 The area covered by the connecting member 2 does not exceed 5% of the upper surface area of the light-emitting member 4, and more preferably, the area covered by the connected member 2 of the upper surface of the light-emitting member 4 is 2% to 3% of the surface area of the light-emitting member 4. .
本发明提供的光转换的器件，通过将感光部件和发光部件采取衬底上并列设置并通过连接部件（即第一电极或增益部件）将感光部件和发光部件连接的方式，器件结构更加紧凑、厚度薄、体积小、重量轻。本发明光转换的器件更适合打印制备，打印制备层数较少，制备效率更高，且具有明显更高的良率。器件在工作状态时，感光部件将输入的非可见光信号转化为光生电子，光生电子通过第一电极注入发光部件驱动发光部件发出可见光，使得器件具有更高的感光出光效率。进一步的，通过将感光部件和发光部件采取衬底上并列设置，可以实现将感光部件并联后与发光部件连接，这样在不增加器件制备难度的前提下提高发光部件的输出亮度。采用本发明的器件制作得到红外成像设备重量轻，适宜穿戴。The light-converting device provided by the present invention has a more compact device structure by arranging the photosensitive member and the light-emitting member in parallel on the substrate and connecting the photosensitive member and the light-emitting member through the connecting member (ie, the first electrode or the gain member). Thin thickness, small size and light weight. The light-converting device of the invention is more suitable for printing preparation, has fewer printing preparation layers, is more efficient in preparation, and has a significantly higher yield. When the device is in operation, the photosensitive component converts the input non-visible light signal into photogenerated electrons, and the photogenerated electrons inject the light emitting component through the first electrode to drive the light emitting component to emit visible light, so that the device has higher light-sensing light-emitting efficiency. Further, by arranging the photosensitive member and the light-emitting member side by side on the substrate, it is possible to connect the photosensitive member in parallel with the light-emitting member, thereby improving the output luminance of the light-emitting member without increasing the difficulty in device fabrication. The infrared imaging device produced by using the device of the invention is light in weight and suitable for wearing.
本发明实施例提供了一种光转换的器件的制备方法。该光转换的器件的制备方法包括以下步骤：Embodiments of the present invention provide a method of fabricating a light converting device. The method of fabricating the light converting device comprises the following steps:
步骤S01：在衬底上形成并列设置的感光部件和发光部件。Step S01: forming a photosensitive member and a light-emitting member arranged side by side on the substrate.
步骤S02：在感光部件上表面和发光部件上表面设置连接部件，其中，感光部件和发光部件通过连接连接。Step S02: providing a connecting member on the upper surface of the photosensitive member and the upper surface of the light emitting member, wherein the photosensitive member and the light emitting member are connected by connection.
在本发明实施例中，步骤S01具体包括：In the embodiment of the present invention, step S01 specifically includes:
步骤S011：在衬底上分别沉积第四电极和第五电极。Step S011: depositing a fourth electrode and a fifth electrode on the substrate, respectively.
步骤S012：在第四电极和第五电极上沉积空穴传输材料分别形成第二空穴传输层和第三空穴传输层。Step S012: depositing a hole transporting material on the fourth electrode and the fifth electrode to form a second hole transporting layer and a third hole transporting layer, respectively.
步骤S013：分别在第二空穴传输层和第三空穴传输层上沉积第二吸光层和第二发光层。Step S013: depositing a second light absorbing layer and a second light emitting layer on the second hole transport layer and the third hole transport layer, respectively.
步骤S014：在第二吸光层和第二发光层上沉积电子传输材料分别形成第四电子传输层和第五电子传输层。Step S014: depositing an electron transporting material on the second light absorbing layer and the second light emitting layer to form a fourth electron transporting layer and a fifth electron transporting layer, respectively.
在本发明实施例中，步骤S02具体包括：在第四电子传输层和第五电子传输层上沉积所述连接部件，形成感光部件和发光部件公用的连接部件。In the embodiment of the present invention, the step S02 specifically includes: depositing the connecting member on the fourth electron transport layer and the fifth electron transport layer to form a connecting member common to the photosensitive member and the light emitting member.
在本发明实施例中，步骤S01和步骤S02中涉及的衬底、第四电极、第五电极、第二空穴传输层、第二吸光层、第四电子传输层、第三空穴传输层、第二发光层、第五电子传输层以及连接部件的相关材料描述与前述实施例中描述的一致，在此不再描述。In the embodiment of the present invention, the substrate, the fourth electrode, the fifth electrode, the second hole transport layer, the second light absorbing layer, the fourth electron transport layer, and the third hole transport layer involved in step S01 and step S02 The description of the related materials of the second luminescent layer, the fifth electron-transporting layer, and the connecting member is the same as that described in the foregoing embodiment, and will not be described here.
在本发明实施例中，由于感光部件和发光部件并列设置在衬底和连接部件之间，且两个部件有几乎相同的薄膜沉积顺序，在材料的选择上，感光部件与发光部件中空穴传输层材料与电子传输层材料可以共用，主要的区别在于吸光层材料和发光层材料，采用本发明的器件进一步简化了制备并且适宜大面积制备。In the embodiment of the present invention, since the photosensitive member and the light-emitting member are juxtaposed between the substrate and the connecting member, and the two members have almost the same film deposition order, hole transport in the photosensitive member and the light-emitting member in material selection The layer material and the electron transport layer material may be shared, the main difference being the light absorbing layer material and the luminescent layer material, and the device of the present invention further simplifies the preparation and is suitable for large-area preparation.
在本发明实施例中，步骤S01和步骤S02中涉及的沉积的方式可以是真空沉积、溶液涂布（例如喷墨打印、转印、压印）或者二者相结合。In the embodiment of the present invention, the manner of deposition involved in step S01 and step S02 may be vacuum deposition, solution coating (for example, inkjet printing, transfer, embossing) or a combination of the two.
以下以喷墨打印为例说明制备方法：The following is an example of inkjet printing to illustrate the preparation method:
（1）提供衬底，在衬底上分别沉积感光部件和发光部件的电极，材料为ITO。(1) A substrate is provided on which electrodes of a photosensitive member and a light-emitting member are separately deposited, and the material is ITO.
（2）分别在感光部件和发光部件内打印第二空穴传输层和第三空穴传输层，空穴传输材料为PEDOT：PSS和NiOx。(2) Printing the second hole transporting layer and the third hole transporting layer in the photosensitive member and the light emitting member, respectively, and the hole transporting materials are PEDOT:PSS and NiOx.
（3）在感光部件像素内打印吸光材料作为第二吸光层，材料为PbS纳米晶；在发光部件像素内打印发光材料作为第二发光层，材料为CdSe-CdS核壳结构纳米晶。(3) printing the light absorbing material as a second light absorbing layer in the pixel of the photosensitive member, the material is PbS nanocrystal; printing the luminescent material as the second luminescent layer in the pixel of the illuminating component, and the material is CdSe-CdS core-shell structure nanocrystal.
（4）分别在感光部件和发光部件内打印电子传输层材料形成第四电子传输层和第五电子传输层，材料为ZnO纳米颗粒。(4) Printing the electron transport layer material in the photosensitive member and the light emitting member, respectively, to form a fourth electron transport layer and a fifth electron transport layer, the material being ZnO nanoparticles.
（5）沉积阴极材料作为连接部件以连接感光部件和发光部件。(5) Depositing a cathode material as a connecting member to connect the photosensitive member and the light emitting member.
本发明实施例提供的光转换的器件的制备方法，由于该器件的结构简单，因而工艺难度低，操作简易，成本低，可实现大规模生产。The method for fabricating the optical conversion device provided by the embodiment of the invention has the advantages of simple structure, low process difficulty, simple operation, low cost, and large-scale production.
本发明实施例还提供了一种红外成像设备，包括如上所述的器件或包括如上所述的制备方法制备的器件。本发明实施例提供的红外成像设备具有更高的感光出光效率，体积小，重量轻，轻薄便携。Embodiments of the present invention also provide an infrared imaging apparatus comprising the device as described above or a device comprising the preparation method as described above. The infrared imaging device provided by the embodiment of the invention has higher light-sensing light-emitting efficiency, small volume, light weight, light weight and portability.
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。The above are only the preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalents, and improvements made within the spirit and scope of the present invention should be included in the scope of the present invention. Inside.

Claims (20)

  1. 一种光转换的器件，其特征在于，所述器件包括：A light converting device, characterized in that the device comprises:
    衬底；Substrate
    连接部件；Connecting component
    设置在所述衬底和所述连接部件之间的且并列设置的感光部件和发光部件；a photosensitive member and a light-emitting member disposed between the substrate and the connecting member and juxtaposed;
    其中，所述感光部件和所述发光部件通过所述连接部件连接。Wherein the photosensitive member and the light-emitting member are connected by the connecting member.
  2. 如权利要求1所述的光转换的器件，其特征在于，工作状态时，所述感光部件将输入的非可见光信号转化为光生电子，所述光生电子通过所述连接部件注入所述发光部件，驱动所述发光部件发出可见光。A light-converting device according to claim 1, wherein said photosensitive member converts an input non-visible light signal into photogenerated electrons, and said photogenerated electrons are injected into said light-emitting member through said connecting member, The light emitting part is driven to emit visible light.
  3. 如权利要求1所述的光转换的器件，其特征在于，工作状态时，所述感光部件将输入的非可见光信号转化为光生电子，所述光生电子通过所述连接部件注入所述发光部件，并与注入所述发光部件的空穴复合后使所述发光部件产生光子，驱动所述发光部件发出可见光。A light-converting device according to claim 1, wherein said photosensitive member converts an input non-visible light signal into photogenerated electrons, and said photogenerated electrons are injected into said light-emitting member through said connecting member, And combining the holes injected into the light-emitting member to generate photons, and driving the light-emitting members to emit visible light.
  4. 如权利要求1所述的光转换的器件，其特征在于，所述连接部件为第一电极或增益部件。A light conversion device according to claim 1, wherein said connecting member is a first electrode or a gain member.
  5. 如权利要求4所述的光转换的器件，其特征在于，所述连接部件为第一电极，所述感光部件包括叠层设置于所述衬底上的第二电极和依次层叠于所述第二电极上的第一电子传输层、第一吸光层、第二电子传输层。A light conversion device according to claim 4, wherein said connecting member is a first electrode, said photosensitive member comprising a second electrode laminated on said substrate and laminated in said first a first electron transport layer, a first light absorbing layer, and a second electron transport layer on the two electrodes.
  6. 如权利要求4所述的光转换的器件，其特征在于，所述增益部件为双极性晶体管，所述双极性晶体管的基极连接所述感光部件上表面，所述双极性晶体管的发射极连接所述发光部件上表面。A light conversion device according to claim 4, wherein said gain member is a bipolar transistor, and a base of said bipolar transistor is connected to an upper surface of said photosensitive member, said bipolar transistor An emitter is coupled to the upper surface of the light emitting component.
  7. 如权利要求4所述的光转换的器件，其特征在于，所述增益部件为包括岛状导体与n型半导体的混合结构，所述岛状导体分布在所述发光部件和所述感光部件上表面，所述岛状导体、所述感光部件上表面和所述发光部件上表面被所述n型半导体覆盖。A light conversion device according to claim 4, wherein said gain member is a mixed structure including an island-shaped conductor and an n-type semiconductor, said island-shaped conductor being distributed over said light-emitting member and said photosensitive member The surface, the island-shaped conductor, the upper surface of the photosensitive member, and the upper surface of the light-emitting member are covered by the n-type semiconductor.
  8. 如权利要求1所述的光转换的器件，其特征在于，所述发光部件包括设置在所述衬底上的第三电极、叠层设置在所述第三电极上的至少两个发光单元以及设置在各相邻的两个发光单元之间的载流子生成层。A light-converting device according to claim 1, wherein said light-emitting member comprises a third electrode disposed on said substrate, at least two light-emitting units laminated on said third electrode, and A carrier generation layer is disposed between each adjacent two light emitting units.
  9. 如权利要求8所述的光转换的器件，其特征在于，所述发光单元包括第一空穴传输层、第一发光层以及第三电子传输层，所述发光层设置在所述第一空穴传输层和所述第三电子传输层之间，所述第一空穴传输层靠近所述第一电极设置，所述第三电子传输层靠近所述连接部件设置。The light-converting device according to claim 8, wherein the light-emitting unit comprises a first hole transport layer, a first light-emitting layer, and a third electron transport layer, and the light-emitting layer is disposed in the first space Between the hole transport layer and the third electron transport layer, the first hole transport layer is disposed adjacent to the first electrode, and the third electron transport layer is disposed adjacent to the connecting member.
  10. 如权利要求8所述的光转换的器件，其特征在于，所述载流子生成层为pn结结构。The light conversion device according to claim 8, wherein the carrier generation layer is a pn junction structure.
  11. 如权利要求1所述的光转换的器件，其特征在于，所述感光部件包括第四电极、第二空穴传输层、第二吸光层、第四电子传输层，所述第四电极设置在所述衬底上，从所述第四电极至所述连接部件的结构顺序为所述第二空穴传输层、所述第二吸光层、所述第四电子传输层；和/或A light conversion device according to claim 1, wherein said photosensitive member comprises a fourth electrode, a second hole transporting layer, a second light absorbing layer, and a fourth electron transporting layer, said fourth electrode being disposed at On the substrate, the structural order from the fourth electrode to the connecting member is the second hole transporting layer, the second light absorbing layer, the fourth electron transporting layer; and/or
    所述发光部件包括第五电极、第三空穴传输层、第二发光层、第五电子传输层，所述第五电极设置在所述衬底上，从所述第五电极至所述连接部件的结构顺序为所述第三空穴传输层、所述第二发光层、所述第五电子传输层。The light emitting part includes a fifth electrode, a third hole transport layer, a second light emitting layer, and a fifth electron transport layer, the fifth electrode being disposed on the substrate, from the fifth electrode to the connection The structural order of the components is the third hole transport layer, the second light emitting layer, and the fifth electron transport layer.
  12. 如权利要求11所述的光转换的器件，其特征在于，所述第二空穴传输层的材料和/或所述第三空穴传输层的材料为有机空穴传输材料、氧化物空穴传输材料中的至少一种；和/或The light conversion device according to claim 11, wherein the material of the second hole transport layer and/or the material of the third hole transport layer is an organic hole transport material, an oxide hole Transmitting at least one of the materials; and/or
    所述第四电子传输层的材料和/或所述第五电子传输层的材料为氧化物电子传输材料、硫化物电子传输材料、硫化物纳米材料电子传输材料、有机电子传输材料中的至少一种。The material of the fourth electron transport layer and/or the material of the fifth electron transport layer is at least one of an oxide electron transport material, a sulfide electron transport material, a sulfide nano material electron transport material, and an organic electron transport material. Kind.
  13. 如权利要求11所述的光转换的器件，其特征在于，A light conversion device according to claim 11, wherein
    所述第二吸光层的材料为无机半导体纳米晶；和/或The material of the second light absorbing layer is inorganic semiconductor nanocrystals; and/or
    所述第二发光层的材料为无机半导体纳米晶、IV族单质半导体发光材料、有机发光材料中的至少一种；和/或The material of the second light-emitting layer is at least one of inorganic semiconductor nanocrystals, group IV elemental semiconductor light-emitting materials, and organic light-emitting materials; and/or
    所述第二吸光层的厚度为10nm-100nm；和/或The second light absorbing layer has a thickness of 10 nm to 100 nm; and/or
    所述第二发光层的厚度为10nm-100nm。The second luminescent layer has a thickness of 10 nm to 100 nm.
  14. 如权利要求1-13任意一项所述的光转换的器件，其特征在于，所述发光部件和感光部件按一比多的方式并列设置在所述衬底上，并联连接的多个感光部件通过所述连接部件与多个并联连接的发光部件连接。The light-converting device according to any one of claims 1 to 13, wherein the light-emitting member and the photosensitive member are juxtaposed on the substrate in a one-to-many manner, and a plurality of photosensitive members are connected in parallel. The connecting member is connected to a plurality of light-emitting members connected in parallel.
  15. 如权利要求1-13任意一项所述的光转换的器件，其特征在于，所述发光部件和所述感光部件按一比多的方式并列设置在所述衬底上，并联连接的多个感光部件通过所述连接部件与一发光部件连接。A light-converting device according to any one of claims 1 to 13, wherein said light-emitting member and said photosensitive member are juxtaposed on said substrate in a one-to-many manner, and a plurality of connected in parallel The photosensitive member is connected to a light emitting member through the connecting member.
  16. 如权利要求1-13任意一项所述的光转换的器件，其特征在于，所述器件包括多个感光部件和一个发光部件，并联连接的多个感光部件通过所述连接部件与一发光部件连接。A light-converting device according to any one of claims 1 to 13, wherein said device comprises a plurality of photosensitive members and a light-emitting member, and said plurality of photosensitive members connected in parallel pass through said connecting member and a light-emitting member connection.
  17. 如权利要求1-13任一项所述的光转换的器件，其特征在于，所述感光部件上表面被所述连接部件全部覆盖，所述发光部件上表面被所述连接部件部分覆盖。The light-converting device according to any one of claims 1 to 13, characterized in that the upper surface of the photosensitive member is entirely covered by the connecting member, and the upper surface of the light-emitting member is partially covered by the connecting member.
  18. 一种光转换的器件的制备方法，其特征在于，所述制备方法包括如下步骤：A method for preparing a light-converting device, characterized in that the preparation method comprises the following steps:
    在衬底上形成并列设置的感光部件和发光部件；Forming a photosensitive member and a light emitting member arranged side by side on the substrate;
    在所述感光部件上表面和所述发光部件上表面设置连接部件，使所述感光部件和所述发光部件通过所述连接部件连接。A connecting member is disposed on the upper surface of the photosensitive member and the upper surface of the light emitting member, and the photosensitive member and the light emitting member are connected by the connecting member.
  19. 如权利要求18所述的制备方法，所述感光部件包括第四电极、第二空穴传输层、第二吸光层、第四电子传输层；所述发光部件包括第五电极、第三空穴传输层、第二发光层、第五电子传输层，其特征在于，所述在衬底上形成并列设置的感光部件和发光部件的步骤，包括：The method according to claim 18, wherein the photosensitive member comprises a fourth electrode, a second hole transporting layer, a second light absorbing layer, and a fourth electron transporting layer; wherein the light emitting member comprises a fifth electrode, a third cavity The transport layer, the second luminescent layer, and the fifth electron transport layer are characterized in that the step of forming the photosensitive member and the illuminating member arranged side by side on the substrate comprises:
    在所述衬底上分别沉积第四电极和第五电极；Depositing a fourth electrode and a fifth electrode on the substrate, respectively;
    在所述第四电极和所述第五电极上沉积空穴传输材料分别形成第二空穴传输层和第三空穴传输层；Depositing a hole transporting material on the fourth electrode and the fifth electrode to form a second hole transporting layer and a third hole transporting layer, respectively;
    分别在所述第二空穴传输层和所述第三空穴传输层上沉积第二吸光层和第二发光层；Depositing a second light absorbing layer and a second light emitting layer on the second hole transport layer and the third hole transport layer, respectively;
    在所述第二吸光层和所述第二发光层上沉积电子传输材料分别形成第四电子传输层和第五电子传输层；Depositing an electron transporting material on the second light absorbing layer and the second light emitting layer to form a fourth electron transporting layer and a fifth electron transporting layer, respectively;
    所述在所述感光部件上表面和所述发光部件上表面设置连接部件的步骤，包括：The step of providing a connecting component on the upper surface of the photosensitive member and the upper surface of the light emitting component includes:
    在所述第四电子传输层和所述第五电子传输层上制备所述连接部件。The connecting member is prepared on the fourth electron transport layer and the fifth electron transport layer.
  20. 一种红外成像设备，其特征在于，所述红外成像设备包括权利要求1-17任一项所述的器件或包括由权利要求18-19任一项所述的制备方法制备获得的器件。An infrared imaging apparatus, characterized in that the infrared imaging apparatus comprises the device according to any one of claims 1 to 17 or comprises a device obtained by the preparation method according to any one of claims 18 to 19.
PCT/CN2018/079022 2017-07-26 2018-03-14 Light conversion device and preparation method therefor, and infrared imaging device WO2019019661A1 (en)

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CN201710616712.X 2017-07-26
CN201710617166.1A CN109309106A (en) 2017-07-26 2017-07-26 Device of light conversion and preparation method thereof, infrared imaging device
CN201710617166.1 2017-07-26
CN201710616883.2A CN109309102A (en) 2017-07-26 2017-07-26 Device of light conversion and preparation method thereof, infrared imaging device
CN201710616712.XA CN109309104B (en) 2017-07-26 2017-07-26 Light conversion device, preparation method thereof and infrared imaging equipment
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CN101138094A (en) * 2005-03-09 2008-03-05 旭化成电子材料元件株式会社 Optical device and optical device manufacturing method
CN101558348A (en) * 2006-09-29 2009-10-14 佛罗里达大学研究基金公司 Method and apparatus for infrared detection and display
CN104752445A (en) * 2013-12-25 2015-07-01 昆山工研院新型平板显示技术中心有限公司 Interactive electronic device and pixel unit thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101138094A (en) * 2005-03-09 2008-03-05 旭化成电子材料元件株式会社 Optical device and optical device manufacturing method
CN101558348A (en) * 2006-09-29 2009-10-14 佛罗里达大学研究基金公司 Method and apparatus for infrared detection and display
CN104752445A (en) * 2013-12-25 2015-07-01 昆山工研院新型平板显示技术中心有限公司 Interactive electronic device and pixel unit thereof

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