WO2019010817A1 - 主动发光显示面板及其制造方法 - Google Patents

主动发光显示面板及其制造方法 Download PDF

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Publication number
WO2019010817A1
WO2019010817A1 PCT/CN2017/102355 CN2017102355W WO2019010817A1 WO 2019010817 A1 WO2019010817 A1 WO 2019010817A1 CN 2017102355 W CN2017102355 W CN 2017102355W WO 2019010817 A1 WO2019010817 A1 WO 2019010817A1
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Prior art keywords
region
pattern
light emitting
light
layer
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PCT/CN2017/102355
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English (en)
French (fr)
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史文
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/739,711 priority Critical patent/US10700138B2/en
Publication of WO2019010817A1 publication Critical patent/WO2019010817A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an active light emitting display panel and a method of fabricating the same.
  • An active light-emitting display panel such as a display panel having an OLED (Organic Light-Emitting Diode) or a QLED (Quantum Dot Light Emitting Diodes) device, has the advantages of fast response speed, high contrast, and the like The mainstream trend in the field.
  • OLED Organic Light-Emitting Diode
  • QLED Quadantum Dot Light Emitting Diodes
  • active light-emitting display panels generally implement full-color display through "OLED or QLED+CF" technology.
  • the light-emitting layer of the OLED or QLED device emits blue light, and the blue light directly passes through the blue sub-pixel region, while in the red color In the pixel area and the green sub-pixel area, the blue light is irradiated to the light-emitting CF (Color Filter), and the light-emitting light CF of the red sub-pixel area emits red light when excited by the blue light, and the green sub-pixel area emits light.
  • the light CF emits green light when excited by blue light, thereby realizing RGB full color display.
  • the energy of the blue photon is relatively high, which easily causes the decay of the polymer organic material in the light-emitting layer, which greatly reduces the service life of the active light-emitting display panel.
  • the present invention provides an active light emitting display panel and a method of fabricating the same, which can improve the service life of the active light emitting display panel.
  • Driving the array layer, covering the substrate, the driving array layer is divided into a first region, a second region and a third region which are sequentially adjacent in a direction parallel to the substrate;
  • the first illuminating pattern is formed on the driving array layer of the first region or the second region, and the material of the first illuminating pattern comprises photoluminescent quantum dots;
  • a second illuminating pattern is formed on the driving array layer of the third region, the material of the second illuminating pattern includes an up-converting luminescent material, and the up-converting luminescent material exists in the form of nanoparticles.
  • each of the nanoparticles includes an inorganic substance and a rare earth ion doped in the inorganic substance;
  • the flat layer covering the first light emitting pattern, the second light emitting pattern, and the driving array layer, the flat layer being provided with a contact hole exposing a drain of the TFT driving the array layer;
  • a pixel electrode formed on the flat layer of the first region, the second region, and the third region, the pixel electrode covering the contact hole and connected to the drain of the TFT;
  • a pixel defining layer which is made of an opaque material and formed at intersections of the first region, the second region, and the third region, and the pixel defining layer covers the first region, the second region, and the first The edge of the pixel electrode of two adjacent regions in the three regions;
  • the third illuminating pattern is for emitting green light
  • the first illuminating pattern is for emitting red light when excited by green light
  • the second illuminating pattern is for emitting blue light when excited by green light.
  • Driving the array layer, covering the substrate, the driving array layer is divided into a first region, a second region and a third region which are sequentially adjacent in a direction parallel to the substrate;
  • the flat layer covering the first light emitting pattern, the second light emitting pattern, and the driving array layer, the flat layer being provided with a contact hole exposing a drain of the TFT driving the array layer;
  • a pixel electrode formed on the flat layer of the first region, the second region, and the third region, the pixel electrode covering the contact hole and connected to the drain of the TFT;
  • a pixel defining layer formed at intersections of the first region, the second region, and the third region, and the pixel defining layer covers pixels of adjacent two regions in the first region, the second region, and the third region The edge of the electrode;
  • the third illuminating pattern is for emitting green light
  • the first illuminating pattern is for emitting red light when excited by green light
  • the second illuminating pattern is used for emitting the second illuminating pattern Blue light is emitted when excited by green light
  • the third illuminating pattern is for emitting red light
  • the first illuminating pattern is for emitting green light when excited by red light
  • the second illuminating pattern is for emitting blue light when excited by red light.
  • the driving array layer is divided above the first region, the second region, and the third region sequentially adjacent to each other in parallel with the substrate direction;
  • the third light emitting pattern is used to emit green light, and the first light emitting pattern is used to be excited by green light
  • the second light emitting pattern is for emitting blue light when excited by the green light
  • the third light emitting pattern is for emitting red light
  • the first light emitting The pattern is for emitting green light when excited by red light
  • the second light pattern is for emitting blue light when excited by red light
  • a reflective electrode covering the third light emitting pattern and the pixel defining layer is formed.
  • the present invention designs a third illuminating pattern of an active illuminating display panel, that is, a luminescent layer is used to emit red or green light instead of blue light, since the energy of the red photon and the green photon is lower than the energy of the blue photon, It is not easy to cause the decay of the polymer organic material in the light-emitting layer, so that the service life of the active light-emitting display panel can be improved.
  • FIG. 1 is a cross-sectional view showing the structure of an active light emitting display panel according to a first embodiment of the present invention
  • FIG. 2 is a cross-sectional view showing the structure of an active light emitting display panel according to a second embodiment of the present invention
  • FIG. 3 is a schematic flow chart of an embodiment of a method for manufacturing an active light emitting display panel according to the present invention.
  • FIG. 4 is a schematic view of manufacturing the active light emitting display panel of FIG. 1 based on the method shown in FIG.
  • FIG. 1 is an active light emitting display panel according to a first embodiment of the present invention.
  • the active light emitting display panel 10 may include a substrate 11 , a driving array layer 12 , a first light emitting pattern 131 , a second light emitting pattern 132 , a flat layer 14 , a pixel electrode 15 , a Pixel definition layer (PDL) 16 , and a first The three light emitting patterns 17 and the reflective electrode 18.
  • PDL Pixel definition layer
  • the substrate 11 includes, but is not limited to, a light-transmitting substrate such as a glass substrate or a plastic substrate.
  • the substrate 11 can be made of a suitable material such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PI (Polyimide, polyimide).
  • the drive array layer 12 is covered on the substrate 11.
  • the drive array layer 12 is divided into a first region Z 1 , a second region Z 2 , and a third region Z 3 adjacent to each other in a direction parallel to the substrate 11 , and the first region Z 1 and the second region Z 2 and the third region Z 3 may be regarded as a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region of the active light-emitting display panel 10, respectively.
  • the driving array layer 12 is provided with electrical components for controlling the display of the corresponding sub-pixels, such as TFT (Thin Film Transistor), which can be designed for the top gate type. Can be designed for the bottom gate type.
  • TFT Thin Film Transistor
  • the first light emitting pattern 131 is formed on the driving array layer 12 of the first region Z 1 .
  • the material of the first illuminating pattern 131 may include a red photoluminescent quantum dot that can be excited by green light to emit red light having a wavelength greater than a green light wavelength.
  • the second light emitting pattern 132 is formed on the driving array layer 12 of the third region Z 3 .
  • the material of the second illuminating pattern 132 may include an up-converting luminescent material that may be excited by green light to emit blue light having a wavelength smaller than a green light wavelength.
  • the upconverting luminescent material may be present in the form of nanoparticles, and each of the nanoparticles may include an inorganic substance and a rare earth ion doped in the inorganic substance, wherein the inorganic substance includes, but is not limited to, a halide, an oxide, a sulfide, and At least one of sulfur oxides, including rare earth ions including, but not limited to, Er 3+ ( ⁇ ions), Ho 3+ ( ⁇ ions), Tm 3+ ( ⁇ ions), Pr 3+ ( ⁇ ions) At least one of Nd 3+ ( ⁇ ions) and Yb 3+ ( ⁇ ions).
  • the flat layer 14 is a full-face light transmitting structure covering the first light emitting pattern 131, the second light emitting pattern 132, and the driving array layer 12, and is provided with a contact hole exposing a drain of the TFT.
  • the pixel electrode 15 is formed on the flat layer 14 of the first region Z 1 , the second region Z 2 , and the third region Z 3 , and the pixel electrodes 15 located in the adjacent two regions may be spaced apart. In each of the regions, the pixel electrode 15 covers the contact hole and is connected to the drain of the TFT.
  • the pixel electrode 15 is a transparent conductive film and may be made of ITO (Indium tin oxide).
  • the pixel defining layer 16 is made of an opaque material for defining an open area of each sub-pixel area of the active light emitting display panel 10, and each of the sub-pixel areas is surrounded by a pixel defining layer 16 .
  • the pixel defining layer 16 is formed on the flat layer 14 where the two of the first region Z 1 , the second region Z 2 and the third region Z 3 intersect, for example, as shown in FIG. 1 , the pixel defining layer 16 is formed on At the intersection of the first region Z 1 and the second region Z 2 , the pixel defining layer 16 is also formed at the intersection of the second region Z 2 and the third region Z 3 .
  • the pixel defining layer 16 may also cover edges of the pixel electrodes 15 located in adjacent two of the first region Z 1 , the second region Z 2 , and the third region Z 3 .
  • the third light emitting pattern 17 is formed on the pixel electrode 15 of each sub-pixel region.
  • the reflective electrode 18 covers the third light emitting pattern 17 and the pixel defining layer 16.
  • the reflective electrode 18 can be a full-face structure, and the material thereof includes, but is not limited to, a metal such as silver or aluminum.
  • the third light emitting pattern 17 in view of the fact that the third light emitting pattern 17 is located between the pixel electrode 15 and the reflective electrode 18, the third light emitting pattern 17 can be regarded as the light emitting layer of the active light emitting display panel 10.
  • the light emitting layer may further include a Hole Injection Layer (HIL), a Hole Transporting Layer (HTL), a Hole Blocking Layer (HBL), and an electron transport layer (Electron Transport). At least one of a layer, an ETL, an Electroinjection Layer (EIL), and an Electron Blocking Layer (HBL).
  • HIL Hole Injection Layer
  • HTL Hole Transporting Layer
  • HBL Hole Blocking Layer
  • ETL Electroinjection Layer
  • HBL Electron Blocking Layer
  • the third light-emitting pattern 17 actively emits green light.
  • green light is directly transmitted from the green sub-pixel region.
  • the first green light emitting pattern 131 a first pattern 131 in the light emitting quantum dot is excited to emit red light.
  • a second green light emission patterns 132, 132 on the second light emission pattern conversion in the luminescent material is excited to emit blue light.
  • the first illuminating pattern 131 and the second illuminating pattern 132 correspond to the illuminating light CF.
  • the luminescent light-emitting quantum dot and the up-conversion luminescent material have the characteristics of adjustable luminescence spectrum, high luminous efficiency and narrow FWHM (Full Width at Half Maximum), and the present embodiment uses luminescent light-emitting quantum dots and up-conversion luminescent materials.
  • the display color gamut can be greatly improved, and the light utilization efficiency is high.
  • the illuminating layer of the active illuminating display panel 10 is designed to emit green light instead of blue light. Since the energy of the green photon is lower than the energy of the blue photon, it is not easy to cause the decay of the high molecular organic material in the luminescent layer. Therefore, the present embodiment can improve the service life of the active light-emitting display panel 10 as compared with the prior art.
  • the active light emitting display panel 10 of the present embodiment may further include an encapsulation layer 19 covering the reflective electrode 18 and forming a sealed space together with the substrate 11 to protect the above structure of the active light emitting display panel 10 . element.
  • the active light emitting display panel 20 may include a substrate 21, a driving array layer 22, a first light emitting pattern 231, a second light emitting pattern 232, a flat layer 24, a pixel electrode 25, a pixel defining layer 26, a third light emitting pattern 27, and a reflective electrode. 28 and encapsulation layer 29.
  • the substrate 21 includes, but is not limited to, a light-transmitting substrate such as a glass substrate or a plastic substrate.
  • the substrate 21 can be made of a suitable material such as PET, PEN, PI or the like.
  • the drive array layer 22 is overlaid on the substrate 21.
  • the driving array layer 22 is divided into a first region Z 4 , a second region Z 5 and a third region Z 6 which are sequentially adjacent to each other, and the three regions can be regarded as active light emission, respectively.
  • the driving array layer 22 is provided with electrical components, such as TFTs, for controlling the display of the corresponding sub-pixels, and the TFTs can be either a top gate type design or a bottom gate type design.
  • the first light emitting pattern 231 is formed on the driving array layer 22 of the second region Z 5 .
  • the material of the first illuminating pattern 231 may include an up-converting luminescent material that may be excited by red light to emit green light having a wavelength smaller than a red light wavelength.
  • the upconverting luminescent material may be present in the form of nanoparticles, and each of the nanoparticles may include an inorganic substance and a rare earth ion doped in the inorganic substance, wherein the inorganic substance includes, but is not limited to, a halide, an oxide, a sulfide, and At least one of the sulfur oxides, the doped rare earth ions include, but are not limited to, at least one of Er 3+ , Ho 3+ , Tm 3+ , Pr 3+ , Nd 3+ , and Yb 3+ .
  • the second light emitting pattern 232 is formed on the driving array layer 22 of the third region Z 6 .
  • the material of the second illuminating pattern 232 may include an up-converting luminescent material that can be excited by red light to emit blue light having a wavelength smaller than a red wavelength.
  • the upconverting luminescent material may be present in the form of nanoparticles, and each of the nanoparticles may include an inorganic substance and a rare earth ion doped in the inorganic substance, wherein the inorganic substance includes, but is not limited to, a halide, an oxide, a sulfide, and At least one of the sulfur oxides, the doped rare earth ions include, but are not limited to, at least one of Er 3+ , Ho 3+ , Tm 3+ , Pr 3+ , Nd 3+ , and Yb 3+ .
  • the flat layer 24 is a full-face light transmitting structure covering the first light emitting pattern 231, the second light emitting pattern 232, and the driving array layer 22, and is provided with a contact hole exposing a drain of the TFT.
  • the pixel electrode 25 is formed on the flat layer 24 of the first region Z 4 , the second region Z 5 , and the third region Z 6 , and the pixel electrodes 25 located in the adjacent two regions may be spaced apart. In each of the regions, the pixel electrode 25 covers the contact hole and is connected to the drain of the TFT.
  • the pixel electrode 25 is a transparent conductive film and may be made of ITO.
  • the pixel defining layer 26 is made of an opaque material for defining an open area of each sub-pixel area of the active light emitting display panel 20, and each of the sub-pixel areas is surrounded by a pixel defining layer 26.
  • the pixel defining layer 26 is formed on the flat layer 24 where the two of the first region Z 4 , the second region Z 5 and the third region Z 6 intersect.
  • the pixel defining layer 26 may also cover edges of the pixel electrodes 25 located in adjacent two of the first region Z 4 , the second region Z 5 , and the third region Z 6 .
  • the third light emitting pattern 27 is formed on the pixel electrode 25 of each sub-pixel region.
  • the reflective electrode 28 covers the third light emitting pattern 27 and the pixel defining layer 26.
  • the reflective electrode 28 can be a full-face structure, and the material thereof includes, but is not limited to, a metal such as silver or aluminum.
  • the encapsulation layer 29 covers the reflective electrode 28 and forms a sealed space together with the substrate 21 to protect the above-described structural elements of the active light-emitting display panel 20.
  • the third light emitting pattern 27 in view of the fact that the third light emitting pattern 27 is located between the pixel electrode 25 and the reflective electrode 28, the third light emitting pattern 27 can be regarded as the light emitting layer of the active light emitting display panel 20.
  • the light emitting layer may further include at least one of a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, an electron injection layer, and an electron blocking layer.
  • the third light-emitting pattern 27 actively emits red light.
  • red light is directly transmitted from the red sub-pixel region.
  • the second region Z 5 red light is irradiated to the first light emitting pattern 231, and the up-converting light emitting material in the first light emitting pattern 231 is excited to emit green light.
  • the second red light emitting patterns 232, 232 on the second light emission pattern conversion in the luminescent material is excited to emit blue light.
  • the active light emitting display panel 20 can realize RGB full color display.
  • the first illuminating pattern 231 and the second illuminating pattern 232 correspond to the illuminating light CF.
  • the up-conversion luminescent material has the characteristics of adjustable luminescence spectrum, high luminous efficiency, and narrow FWHM.
  • the up-conversion luminescent material is applied to the active illuminating display panel 20, which can greatly improve the display color gamut and has high light. Utilization rate.
  • the illuminating layer of the active illuminating display panel 20 is designed to emit red light instead of blue light. Since the energy of the red photon is lower than the energy of the blue photon, it is not easy to cause the decay of the high molecular organic material in the luminescent layer. Therefore, the present embodiment can improve the service life of the active light-emitting display panel 20 as compared with the prior art.
  • the active light emitting display panel 10 shown in FIG. 1 and the active light emitting display panel 10 shown in FIG. 2 are only schematic views for explaining the object of the present invention, and the active light emitting display panel of the present invention may further have other structures of the prior art. It will not be repeated here.
  • FIG. 3 illustrates a method of fabricating an active light emitting display panel according to an embodiment of the present invention.
  • the manufacturing method can be used to form an active light emitting display panel having the structure shown in FIG. 1 or FIG. 2.
  • the present invention is hereinafter used to form an active light emitting display panel having the structure of the embodiment shown in FIG. 10 is an example for explanation.
  • the manufacturing method may include the following steps S31 to S39.
  • the substrate 11 includes, but is not limited to, a light-transmitting substrate such as a glass substrate or a plastic substrate.
  • the substrate 11 can be made of a suitable material such as PET, PEN, PI or the like.
  • S32 forming a driving array layer covering the substrate, wherein the driving array layer is divided into a first region, a second region, and a third region sequentially adjacent to each other in a direction parallel to the substrate.
  • a direction parallel to the substrate 11, layer 12 above the drive array is divided with a first region adjacent to sequentially Z 1, Z 2 of the second region and the third region Z 3, Z and the first region 1.
  • the second region Z 2 and the third region Z 3 may be regarded as a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region of the active light-emitting display panel 10, respectively.
  • the driving array layer 12 is provided with electrical components for controlling the display of the corresponding sub-pixels, such as TFTs, which may be either a top gate type design or a bottom gate type design.
  • the process of forming the TFT in this embodiment is as follows:
  • a full surface metal layer can be formed on the substrate 11 by a PVD (Physical Vapor Deposition) method, and then the entire surface metal layer is patterned to leave only a predetermined area of metal. Layers to form a gate.
  • the patterning process may include photoresist coating, exposure, development, etching, and the like. For details, refer to the prior art, and details are not described herein.
  • a full surface insulating layer covering the gate electrode can be formed by a CVD (Chemical Vapor Deposition) method.
  • the insulating layer may be made of silicon oxide (SiO x ), or the insulating layer may include a silicon oxide layer and a silicon nitride compound layer, which in turn cover the gate, such as a SiO 2 (silicon dioxide) layer and Si 3 N 4 .
  • the (tri-silicon nitride) layer further improves the wear resistance and insulation properties of the insulating layer.
  • a full-surface active layer can be formed by a CVD method, and then a full-surface active layer is patterned, so that only a portion of the entire active layer above the gate is retained, that is, An active layer is formed.
  • this embodiment can also directly form the active layer described above by a CVD method in combination with a mask having a predetermined pattern.
  • the present embodiment can form the source and drain of the TFT by the same patterning process as forming the gate.
  • the present embodiment may employ PVD, sputtering, vapor deposition or the like in the first region Z pattern 131 is formed on the first light-emitting layer 1 12 drive arrays.
  • the second illuminating pattern 132 can be formed on the driving array layer 12 of the third region Z 3 by PVD, sputtering, evaporation, or the like.
  • the flat layer 14 is a full-surface light-transmitting structure covering the first light-emitting pattern 131, the second light-emitting pattern 132, and the driving array layer 12. Based on this, the embodiment may form the CVD method. Flat layer 14. Further, in this embodiment, the flat layer 14 may be formed with a contact hole exposing the drain electrode above the drain of the TFT by etching or the like.
  • S36 forming a pixel electrode on the flat layer of the first region, the second region, and the third region, the pixel electrode covering the contact hole and connected to the drain of the TFT.
  • the pixel electrode 15 can be formed by a PVD method and a patterning process. Covering the flat layer 14 with a full-face transparent electrode by a PVD method, and then performing a patterning process, such as an etching process, to remove an entire surface of the transparent conductive layer overlapping the adjacent two regions of the three regions. In part, a full-face transparent electrode forms an open area at the intersection of two adjacent areas, that is, the pixel electrodes 15 located in the adjacent two areas are spaced apart.
  • a mask having a hollowed out region and a non-hollowed region may be disposed on the flat layer 14, and then a transparent conductive material is deposited on the flat layer 14 through the hollow region of the mask, while the The transparent conductive material is blocked by the non-hollowed region of the mask and is not deposited on the flat layer 14, thereby forming the above-described pixel electrode 15.
  • S37 forming a pixel defining layer at intersections of the two regions in the first region, the second region, and the third region, the pixel defining layer covering pixels of adjacent two regions in the first region, the second region, and the third region The edge of the electrode.
  • S38 forming a third light emitting pattern on the pixel electrode, wherein when the first light emitting pattern is formed on the driving array layer of the first region, the third light emitting pattern is used to emit green light, and the first light emitting pattern is used to be green Red light is emitted when the light is excited, and the second light emitting pattern is used to emit blue light when excited by the green light; when the first light emitting pattern is formed on the driving array layer of the second region, the third light emitting pattern is used to emit red light, An illumination pattern is used to emit green light when excited by red light, and a second illumination pattern is used to emit blue light when excited by red light.
  • the third light emitting pattern 17 may be formed on the pixel electrode 15 of each sub-pixel region by PVD, sputtering, evaporation, or the like.
  • the reflective electrode 18 is a one-sided structure covering the third light-emitting pattern 17 and the pixel defining layer 16.
  • the third light emitting pattern 17 and the pixel defining layer 16 may be covered with a conductive metal layer by sputtering to form the reflective electrode 18.
  • the material of the conductive metal layer includes, but is not limited to, silver, aluminum, and the like.
  • the embodiment can be formed on the reflective electrode 28 by PVD, sputtering, evaporation, or the like.
  • An encapsulation layer 19 is formed which covers the reflective electrode 18 and forms a sealed space together with the substrate 11 to protect the above-mentioned structural elements of the active light-emitting display panel 10.
  • the above manufacturing method can produce the same active light-emitting display panel as that shown in FIG. 1 or FIG. 2, and thus has the same advantageous effects.

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Abstract

一种主动发光显示面板（10）及其制造方法，所述主动发光显示面板（10）的发光层（17）发出红光或绿光，而非蓝光，由于红光光子和绿光光子的能量均低于蓝光光子的能量，不容易引起发光层（17）中高分子有机材料的衰变，因此能够提高主动发光显示面板（10）的使用寿命。

Description

主动发光显示面板及其制造方法 【技术领域】
本发明涉及显示技术领域，具体涉及一种主动发光显示面板及其制造方法。
【背景技术】
主动发光显示面板，例如具有OLED(Organic Light-Emitting Diode，有机发光二极管)或QLED(Quantum Dot Light Emitting Diodes，量子点发光二极管)器件的显示面板，具有响应速度快、对比度高等优点，已成为显示领域的主流趋势。当前，主动发光显示面板一般通过“OLED或QLED+CF”技术实现全彩显示，具体而言，OLED或QLED器件的发光层发出蓝光，蓝光从蓝色子像素区域直接透出，而在红色子像素区域和绿色子像素区域，蓝光照射至发光致光CF(Color Filter，彩色滤光片)，红色子像素区域的发光致光CF在被蓝光激发时发出红光，绿色子像素区域的发光致光CF在被蓝光激发时发出绿光，从而实现RGB全彩显示。但是，蓝光光子的能量较高，容易引起发光层中高分子有机材料的衰变，这使得主动发光显示面板的使用寿命大大降低。
【发明内容】
有鉴于此，本发明提供一种主动发光显示面板及其制造方法，能够提高主动发光显示面板的使用寿命。
本发明一实施例的主动发光显示面板，包括：
基板；
驱动阵列层，覆盖基板，所述驱动阵列层上方被划分有沿平行于基板方向依次相邻的第一区域、第二区域和第三区域；
第一发光图案，形成于第一区域或第二区域的驱动阵列层上，所述第一发光图案的材质包括光致发光量子点；
第二发光图案，形成于第三区域的驱动阵列层上，所述第二发光图案的材质包括上转换发光材料，所述上转换发光材料以纳米颗粒的形式存在， 且每一纳米颗粒包括无机物及掺杂于无机物中的稀土离子；
平坦层，覆盖第一发光图案、第二发光图案和驱动阵列层，所述平坦层开设有暴露驱动阵列层的TFT的漏极的接触孔；
像素电极，形成于第一区域、第二区域和第三区域的平坦层上，所述像素电极覆盖接触孔并与TFT的漏极连接；
像素限定层，由不透光的材质制成，且形成于第一区域、第二区域和第三区域中两两相交处，且所述像素限定层覆盖位于第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘；
第三发光图案，形成于像素电极上；
反射电极，覆盖第三发光图案和像素限定层；
其中，第三发光图案用于发出绿光，第一发光图案用于在被绿光激发时发出红光，第二发光图案用于在被绿光激发时发出蓝光。
本发明一实施例的主动发光显示面板，包括：
基板；
驱动阵列层，覆盖基板，所述驱动阵列层上方被划分有沿平行于基板方向依次相邻的第一区域、第二区域和第三区域；
第一发光图案，形成于第一区域或第二区域的驱动阵列层上；
第二发光图案，形成于第三区域的驱动阵列层上；
平坦层，覆盖第一发光图案、第二发光图案和驱动阵列层，所述平坦层开设有暴露驱动阵列层的TFT的漏极的接触孔；
像素电极，形成于第一区域、第二区域和第三区域的平坦层上，所述像素电极覆盖接触孔并与TFT的漏极连接；
像素限定层，形成于第一区域、第二区域和第三区域中两两相交处，且所述像素限定层覆盖位于第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘；
第三发光图案，形成于像素电极上；
反射电极，覆盖第三发光图案和像素限定层；
其中，当第一发光图案形成于第一区域的驱动阵列层上时，第三发光图案用于发出绿光，第一发光图案用于在被绿光激发时发出红光，第二发光图案用于在被绿光激发时发出蓝光；当第一发光图案形成于第二区域的 驱动阵列层上时，第三发光图案用于发出红光，第一发光图案用于在被红光激发时发出绿光，第二发光图案用于在被红光激发时发出蓝光。
本发明一实施例的主动发光显示面板的制造方法，包括：
提供一基板；
形成覆盖基板的驱动阵列层，所述驱动阵列层上方被划分有沿平行于基板方向依次相邻的第一区域、第二区域和第三区域；
在第一区域或第二区域的驱动阵列层上形成第一发光图案；
在第三区域的驱动阵列层上形成第二发光图案；
形成覆盖第一发光图案、第二发光图案和驱动阵列层的平坦层，所述平坦层开设有暴露驱动阵列层的TFT的漏极的接触孔；
在第一区域、第二区域和第三区域的平坦层上形成像素电极，所述像素电极覆盖接触孔并与TFT的漏极连接；
在第一区域、第二区域和第三区域中两两相交处形成像素限定层，所述像素限定层覆盖位于第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘；
在像素电极上形成第三发光图案，其中，当第一发光图案形成于第一区域的驱动阵列层上时，第三发光图案用于发出绿光，第一发光图案用于在被绿光激发时发出红光，第二发光图案用于在被绿光激发时发出蓝光；当第一发光图案形成于第二区域的驱动阵列层上时，第三发光图案用于发出红光，第一发光图案用于在被红光激发时发出绿光，第二发光图案用于在被红光激发时发出蓝光；
形成覆盖第三发光图案和像素限定层的反射电极。
有益效果：本发明设计主动发光显示面板的第三发光图案，即发光层用于发出红光或绿光，而非蓝光，由于红光光子和绿光光子的能量均低于蓝光光子的能量，不容易引起发光层中高分子有机材料的衰变，因此能够提高主动发光显示面板的使用寿命。
【附图说明】
图1是本发明第一实施例的主动发光显示面板的结构剖视图；
图2是本发明第二实施例的主动发光显示面板的结构剖视图；
图3是本发明的主动发光显示面板的制造方法一实施例的流程示意图；
图4是基于图3所示方法制造图1所示主动发光显示面板的示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明所提供的各个示例性的实施例的技术方案进行清楚、完整地描述。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。
请参阅图1，为本发明第一实施例的主动发光显示面板。所述主动发光显示面板10可以包括基板11、驱动阵列层12、第一发光图案131、第二发光图案132、平坦层14、像素电极15、像素限定层(Pixel definition layer，PDL)16、第三发光图案17以及反射电极18。
基板11包括但不限于玻璃基材、塑料基材等透光基材。基板11可以由PET(聚对苯二甲酸乙二醇酯)、PEN(聚萘二甲酸乙二醇酯)、PI(Polyimide，聚酰亚胺)等合适的材料制得。
驱动阵列层12覆盖于基板11上。沿平行于基板11的方向，该驱动阵列层12的上方被划分有依次相邻的第一区域Z1、第二区域Z2和第三区域Z3，且第一区域Z1、第二区域Z2和第三区域Z3可分别视为主动发光显示面板10的红色子像素区域、绿色子像素区域和蓝色子像素区域。基于此，在所述每一区域内，驱动阵列层12均设置有用于控制对应子像素显示的电器元件，例如TFT(Thin Film Transistor，薄膜晶体管)，该TFT既可以为顶栅型设计，也可以为底栅型设计。
第一发光图案131形成于第一区域Z1的驱动阵列层12上。第一发光图案131的材质可以包括红光光致发光量子点，该红光光致发光量子点可以被绿光激发而发出波长大于绿光波长的红光。
第二发光图案132形成于第三区域Z3的驱动阵列层12上。所述第二发光图案132的材质可以包括上转换发光材料，该上转换发光材料可以被绿光激发而发出波长小于绿光波长的蓝光。该上转换发光材料可以以纳米颗粒的形式存在，且每一纳米颗粒可以包括无机物以及掺杂于无机物中的稀土离子，其中，无机物包括但不限于卤化物、氧化物、硫化物以及硫氧化物中的至少一种，所掺杂的稀土离子包括但不限于Er3+(铒离子)、Ho3+(钬 离子)、Tm3+(铥离子)、Pr3+(镨离子)、Nd3+(钕离子)以及Yb3+(镱离子)中的至少一种。
平坦层14为覆盖第一发光图案131、第二发光图案132以及驱动阵列层12的一整面透光结构，其开设有暴露TFT的漏极的接触孔。
像素电极15形成于第一区域Z1、第二区域Z2和第三区域Z3的平坦层14上，位于相邻两个区域的像素电极15可以间隔设置。在每一区域内，像素电极15覆盖接触孔并与TFT的漏极连接。像素电极15为透明导电薄膜，其材质可以为ITO(Indium tin oxide，氧化铟锡)。
像素限定层16由不透光的材质制成，用于定义主动发光显示面板10的各个子像素区域的开口区，每一子像素区域的四周均环绕有像素限定层16。换言之，像素限定层16形成于第一区域Z1、第二区域Z2和第三区域Z3中两两相交处的平坦层14上，例如，如图1所示，像素限定层16形成于第一区域Z1和第二区域Z2的相交处，像素限定层16还形成于第二区域Z2和第三区域Z3的相交处。并且，所述像素限定层16还可以覆盖位于第一区域Z1、第二区域Z2和第三区域Z3中相邻两个区域的像素电极15的边缘。
第三发光图案17形成于各个子像素区域的像素电极15上。
反射电极18覆盖于第三发光图案17和像素限定层16上。反射电极18可以为一整面结构，其材质包括但不限于银、铝等金属。
在本实施例中，鉴于第三发光图案17位于像素电极15和反射电极18之间，所述第三发光图案17可视为主动发光显示面板10的发光层。当然，该发光层还可以包括空穴注入层(Hole Injection Layer，HIL)、空穴传输层(Hole Transporting Layer，HTL)、空穴阻挡层(Hole Blocking Layer，HBL)、电子传输层(Electron Transport Layer，ETL)、电子注入层(Electron Injection Layer，EIL)以及电子阻挡层(Electron Blocking Layer，HBL)中的至少一个。
当对像素电极15和反射电极18施加电压后，第三发光图案17主动发出绿光。在第二区域Z2中，绿光从绿色子像素区域直接透出。在第一区域Z1中，绿光照射到第一发光图案131，第一发光图案131中的量子点被激发而发出红光。在第三区域Z3中，绿光照射到第二发光图案132，第二发光图案132中的上转换发光材料被激发而发出蓝光。由此，主动发光显示面 板10能够实现RGB全彩显示。
在本实施例中，第一发光图案131和第二发光图案132相当于发光致光CF。基于发光致光量子点和上转换发光材料具有发光光谱可调、发光效率高以及FWHM(Full Width at Half Maximum，半高宽)窄等特点，本实施例将发光致光量子点和上转换发光材料应用于主动发光显示面板10，可大幅提升其显示色域，且具有较高的光利用率。
另外，本实施例设计主动发光显示面板10的发光层用于发出绿光，而非蓝光，由于绿光光子的能量均低于蓝光光子的能量，不容易引起发光层中高分子有机材料的衰变，因此相比较于现有技术，本实施例能够提高主动发光显示面板10的使用寿命。
请继续参阅图1，本实施例的主动发光显示面板10还可以包括封装层19，该封装层19覆盖反射电极18并与基板11一同形成一个密封空间，以保护主动发光显示面板10的上述结构元件。
请参阅图2，为本发明第二实施例的主动发光显示面板。所述主动发光显示面板20可以包括基板21、驱动阵列层22、第一发光图案231、第二发光图案232、平坦层24、像素电极25、像素限定层26、第三发光图案27、反射电极28以及封装层29。
基板21包括但不限于玻璃基材、塑料基材等透光基材。基板21可以由PET、PEN、PI等合适的材料制得。
驱动阵列层22覆盖于基板21上。沿平行于基板21的方向，该驱动阵列层22的上方被划分有依次相邻的第一区域Z4、第二区域Z5和第三区域Z6，该三个区域可分别视为主动发光显示面板20的红色子像素区域、绿色子像素区域和蓝色子像素区域。基于此，在所述每一区域内，驱动阵列层22均设置有用于控制对应子像素显示的电器元件，例如TFT，该TFT既可以为顶栅型设计，也可以为底栅型设计。
第一发光图案231形成于第二区域Z5的驱动阵列层22上。第一发光图案231的材质可以包括上转换发光材料，该上转换发光材料可以被红光激发而发出波长小于红光波长的绿光。该上转换发光材料可以以纳米颗粒的形式存在，且每一纳米颗粒可以包括无机物以及掺杂于无机物中的稀土离子，其中，无机物包括但不限于卤化物、氧化物、硫化物以及硫氧化物中 的至少一种，所掺杂的稀土离子包括但不限于Er3+、Ho3+、Tm3+、Pr3+、Nd3+以及Yb3+中的至少一种。
第二发光图案232形成于第三区域Z6的驱动阵列层22上。所述第二发光图案232的材质可以包括上转换发光材料，该上转换发光材料可以被红光激发而发出波长小于红光波长的蓝光。该上转换发光材料可以以纳米颗粒的形式存在，且每一纳米颗粒可以包括无机物以及掺杂于无机物中的稀土离子，其中，无机物包括但不限于卤化物、氧化物、硫化物以及硫氧化物中的至少一种，所掺杂的稀土离子包括但不限于Er3+、Ho3+、Tm3+、Pr3+、Nd3+以及Yb3+中的至少一种。
平坦层24为覆盖第一发光图案231、第二发光图案232以及驱动阵列层22的一整面透光结构，其开设有暴露TFT的漏极的接触孔。
像素电极25形成于第一区域Z4、第二区域Z5和第三区域Z6的平坦层24上，位于相邻两个区域的像素电极25可以间隔设置。在每一区域内，像素电极25覆盖接触孔并与TFT的漏极连接。像素电极25为透明导电薄膜，其材质可以为ITO。
像素限定层26由不透光的材质制成，用于定义主动发光显示面板20的各个子像素区域的开口区，每一子像素区域的四周均环绕有像素限定层26。换言之，像素限定层26形成于第一区域Z4、第二区域Z5和第三区域Z6中两两相交处的平坦层24上。并且，所述像素限定层26还可以覆盖位于第一区域Z4、第二区域Z5和第三区域Z6中相邻两个区域的像素电极25的边缘。
第三发光图案27形成于各个子像素区域的像素电极25上。
反射电极28覆盖于第三发光图案27和像素限定层26上。反射电极28可以为一整面结构，其材质包括但不限于银、铝等金属。
封装层29覆盖反射电极28并与基板21一同形成一个密封空间，以保护主动发光显示面板20的上述结构元件。
在本实施例中，鉴于第三发光图案27位于像素电极25和反射电极28之间，所述第三发光图案27可视为主动发光显示面板20的发光层。当然，该发光层还可以包括空穴注入层、空穴传输层、空穴阻挡层、电子传输层、电子注入层以及电子阻挡层中的至少一个。
当对像素电极25和反射电极28施加电压后，第三发光图案27主动发出红光。在第一区域Z4中，红光从红色子像素区域直接透出。在第二区域Z5中，红光照射到第一发光图案231，第一发光图案231中的上转换发光材料被激发而发出绿光。在第三区域Z6中，红光照射到第二发光图案232，第二发光图案232中的上转换发光材料被激发而发出蓝光。由此，主动发光显示面板20能够实现RGB全彩显示。
在本实施例中，第一发光图案231和第二发光图案232相当于发光致光CF。基于上转换发光材料具有发光光谱可调、发光效率高以及FWHM窄等特点，本实施例将上转换发光材料应用于主动发光显示面板20，可大幅提升其显示色域，且具有较高的光利用率。
另外，本实施例设计主动发光显示面板20的发光层用于发出红光，而非蓝光，由于红光光子的能量均低于蓝光光子的能量，不容易引起发光层中高分子有机材料的衰变，因此相比较于现有技术，本实施例能够提高主动发光显示面板20的使用寿命。
应该理解到，图1所示主动发光显示面板10以及图2所示主动发光显示面板10仅为阐述本发明之发明目的示意图，本发明的主动发光显示面板还可以具有现有技术的其他结构，此处不予以赘述。
请参阅图3，为本发明一实施例的主动发光显示面板的制造方法。所述制造方法可用于形成具有图1或图2所示结构的主动发光显示面板，为便于描述，本发明下文以所述制造方法用于形成具有图1所示实施例结构的主动发光显示面板10为例进行说明。
所述制造方法可以包括如下步骤S31～S39。
S31：提供一基板。
基板11包括但不限于玻璃基材、塑料基材等透光基材。基板11可以由PET、PEN、PI等合适的材料制得。
S32：形成覆盖基板的驱动阵列层，所述驱动阵列层上方被划分有沿平行于基板方向依次相邻的第一区域、第二区域和第三区域。
请参阅图4，沿平行于基板11的方向，该驱动阵列层12的上方被划分有依次相邻的第一区域Z1、第二区域Z2和第三区域Z3，且第一区域Z1、第二区域Z2和第三区域Z3可分别视为主动发光显示面板10的红色子像素区 域、绿色子像素区域和蓝色子像素区域。基于此，在每一区域内，驱动阵列层12均设置有用于控制对应子像素显示的电器元件，例如TFT，该TFT既可以为顶栅型设计，也可以为底栅型设计。
以底栅型设计的TFT为例，本实施例形成TFT的过程如下：
首先，本实施例可以采用PVD(Physical Vapor Deposition，物理气相沉积)方法在基板11上形成一整面金属层，而后对所述一整面金属层进行图案化制程，从而仅保留预定区域的金属层，从而形成栅极。其中，图案化制程可以包括光阻涂布、曝光、显影、刻蚀等工艺，具体可参阅现有技术，此处不予以赘述。
然后，本实施例可以采用CVD(Chemical Vapor Deposition，化学气相沉积)方法形成覆盖栅极的一整面的绝缘层。该绝缘层的材质可以为硅氧化物(SiOx)，或者所述绝缘层包括依次覆盖栅极的硅氧化合物层和硅氮化合物层，例如SiO2(二氧化硅)层和Si3N4(三氮化硅)层，进一步提高绝缘层的耐磨损能力和绝缘性能。
接着，本实施例可采用CVD方法形成一整面有源层，而后对一整面有源层进行图案化制程，从而仅保留该一整面有源层的位于栅极上方保的部分，即形成有源层。当然，本实施例也可采用CVD方法并结合具有预定图案的掩膜板，直接形成具有上述有源层。
最后，本实施例可以采用与形成栅极相同的图案化制程工艺形成所述TFT的源极和漏极。
S33：在第一区域或第二区域的驱动阵列层上形成第一发光图案。
请参阅图4，本实施例可以采用PVD、溅射、蒸镀等方法在第一区域Z1的驱动阵列层12上形成第一发光图案131。
S34：在第三区域的驱动阵列层上形成第二发光图案。
同理，本实施例可以采用PVD、溅射、蒸镀等方法在第三区域Z3的驱动阵列层12上形成第二发光图案132。
S35：形成覆盖第一发光图案、第二发光图案和驱动阵列层的平坦层，所述平坦层开设有暴露驱动阵列层的TFT的漏极的接触孔。
平坦层14为覆盖第一发光图案131、第二发光图案132以及驱动阵列层12的一整面透光结构，基于此，本实施例可以采用CVD方法形成所述 平坦层14。进一步地，本实施例可以采用刻蚀等方法使得所述平坦层14在TFT的漏极的上方形成暴露所述漏极的接触孔。
S36：在第一区域、第二区域和第三区域的平坦层上形成像素电极，所述像素电极覆盖接触孔并与TFT的漏极连接。
本实施例可以采用PVD方法和图案化制程形成像素电极15。通过PVD方法在平坦层14上覆盖一整面透明电极，再通过图案化制程，例如刻蚀处理，以去除一整面透明导电的与上述三个区域中相邻两个区域相交处相重叠的部分，使得一整面透明电极在相邻两个区域相交处形成开孔区，即，使得位于相邻两个区域的像素电极15间隔设置。
当然，本实施例也可以在平坦层14上设置具有镂空区和非镂空区的掩膜板，而后，将透明导电材料通过所述掩膜板的镂空区沉积在平坦层14上，同时所述透明导电材料被所述掩膜板的非镂空区遮挡而未沉积在平坦层14上，从而形成上述像素电极15。
S37：在第一区域、第二区域和第三区域中两两相交处形成像素限定层，所述像素限定层覆盖位于第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘。
S38：在像素电极上形成第三发光图案，其中，当第一发光图案形成于第一区域的驱动阵列层上时，第三发光图案用于发出绿光，第一发光图案用于在被绿光激发时发出红光，第二发光图案用于在被绿光激发时发出蓝光；当第一发光图案形成于第二区域的驱动阵列层上时，第三发光图案用于发出红光，第一发光图案用于在被红光激发时发出绿光，第二发光图案用于在被红光激发时发出蓝光。
请参阅图4，本实施例可以采用PVD、溅射、蒸镀等方法在各个子像素区域的像素电极15上形成第三发光图案17。
S39：形成覆盖第三发光图案和像素限定层的反射电极。
反射电极18为覆盖于第三发光图案17和像素限定层16上的一整面结构。本实施例可以采用溅射法在第三发光图案17和像素限定层16上覆盖一层导电金属层，从而形成反射电极18。该导电金属层的材质包括但不限于银、铝等。
最后，本实施例可以采用PVD、溅射、蒸镀等方法在反射电极28上形 成一封装层19，该封装层19覆盖反射电极18并与基板11一同形成一个密封空间，以保护主动发光显示面板10的上述结构元件。
上述制造方法可制得与图1或图2所示结构相同的主动发光显示面板，因此具有与其相同的有益效果。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种主动发光显示面板，其中，包括：
    基板；
    驱动阵列层，覆盖所述基板，所述驱动阵列层上方被划分有沿平行于所述基板方向依次相邻的第一区域、第二区域和第三区域；
    第一发光图案，形成于所述第一区域的驱动阵列层上，所述第一发光图案的材质包括光致发光量子点；
    第二发光图案，形成于所述第三区域的驱动阵列层上，所述第二发光图案的材质包括上转换发光材料，所述上转换发光材料以纳米颗粒的形式存在，且每一纳米颗粒包括无机物及掺杂于无机物中的稀土离子；
    平坦层，覆盖所述第一发光图案、所述第二发光图案和所述驱动阵列层，所述平坦层开设有暴露所述驱动阵列层的TFT的漏极的接触孔；
    像素电极，形成于所述第一区域、第二区域和第三区域的平坦层上，所述像素电极覆盖所述接触孔并与所述TFT的漏极连接；
    像素限定层，由不透光的材质制成，且形成于所述第一区域、第二区域和第三区域中两两相交处，且所述像素限定层覆盖位于所述第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘；
    第三发光图案，形成于所述像素电极上；
    反射电极，覆盖所述第三发光图案和所述像素限定层；
    其中，所述第三发光图案用于发出绿光，所述第一发光图案用于在被绿光激发时发出红光，所述第二发光图案用于在被绿光激发时发出蓝光。
  2. 根据权利要求1所述的主动发光显示面板，其中，所述无机物包括卤化物、氧化物、硫化物以及硫氧化物中的至少一种，所掺杂的稀土离子包括Er3+(铒离子)、Ho3+(钬离子)、Tm3+(铥离子)、Pr3+(镨离子)、Nd3+(钕离子)以及Yb3+(镱离子)中的至少一种。
  3. 一种主动发光显示面板，其中，包括：
    基板；
    驱动阵列层，覆盖所述基板，所述驱动阵列层上方被划分有沿平行于所述基板方向依次相邻的第一区域、第二区域和第三区域；
    第一发光图案，形成于所述第一区域或第二区域的驱动阵列层上；
    第二发光图案，形成于所述第三区域的驱动阵列层上；
    平坦层，覆盖所述第一发光图案、所述第二发光图案和所述驱动阵列层，所述平坦层开设有暴露所述驱动阵列层的TFT的漏极的接触孔；
    像素电极，形成于所述第一区域、第二区域和第三区域的平坦层上，所述像素电极覆盖所述接触孔并与所述TFT的漏极连接；
    像素限定层，形成于所述第一区域、第二区域和第三区域中两两相交处，且所述像素限定层覆盖位于所述第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘；
    第三发光图案，形成于所述像素电极上；
    反射电极，覆盖所述第三发光图案和所述像素限定层；
    其中，当所述第一发光图案形成于所述第一区域的驱动阵列层上时，所述第三发光图案用于发出绿光，所述第一发光图案用于在被绿光激发时发出红光，所述第二发光图案用于在被绿光激发时发出蓝光；当所述第一发光图案形成于所述第二区域的驱动阵列层上时，所述第三发光图案用于发出红光，所述第一发光图案用于在被红光激发时发出绿光，所述第二发光图案用于在被红光激发时发出蓝光。
  4. 根据权利要求3所述的主动发光显示面板，其中，所述第一发光图案形成于所述第一区域的驱动阵列层上，所述第一发光图案的材质包括光致发光量子点，所述第二发光图案的材质包括上转换发光材料。
  5. 根据权利要求4所述的主动发光显示面板，其中，所述上转换发光材料包括无机物以及掺杂于所述无机物中的稀土离子。
  6. 根据权利要求5所述的主动发光显示面板，其中，所述上转换发光材料为纳米颗粒。
  7. 根据权利要求3所述的主动发光显示面板，其中，所述第一发光图案形成于所述第一区域的驱动阵列层上，所述第一发光图案和所述第二发光图案的材质均包括上转换发光材料。
  8. 根据权利要求7所述的主动发光显示面板，其中，所述上转换发光材料包括无机物以及掺杂于所述无机物中的稀土离子。
  9. 根据权利要求8所述的主动发光显示面板，其中，所述上转换发光 材料为纳米颗粒。
  10. 根据权利要求3所述的主动发光显示面板，其中，所述无机物包括卤化物、氧化物、硫化物以及硫氧化物中的至少一种，所掺杂的稀土离子包括Er3+(铒离子)、Ho3+(钬离子)、Tm3+(铥离子)、Pr3+(镨离子)、Nd3+(钕离子)以及Yb3+(镱离子)中的至少一种。
  11. 根据权利要求3所述的主动发光显示面板，其中，所述像素限定层由不透光的材质制成。
  12. 一种显示面板的制造方法，其中，所述制造方法包括：
    提供一基板；
    形成覆盖所述基板的驱动阵列层，所述驱动阵列层上方被划分有沿平行于所述基板方向依次相邻的第一区域、第二区域和第三区域；
    在所述第一区域或第二区域的驱动阵列层上形成第一发光图案；
    在所述第三区域的驱动阵列层上形成第二发光图案；
    形成覆盖所述第一发光图案、所述第二发光图案和所述驱动阵列层的平坦层，所述平坦层开设有暴露所述驱动阵列层的TFT的漏极的接触孔；
    在所述第一区域、第二区域和第三区域的平坦层上形成像素电极，所述像素电极覆盖所述接触孔并与所述TFT的漏极连接；
    在所述第一区域、第二区域和第三区域中两两相交处形成像素限定层，所述像素限定层覆盖位于所述第一区域、第二区域和第三区域中相邻两个区域的像素电极的边缘；
    在所述像素电极上形成第三发光图案，其中，当所述第一发光图案形成于所述第一区域的驱动阵列层上时，所述第三发光图案用于发出绿光，所述第一发光图案用于在被绿光激发时发出红光，所述第二发光图案用于在被绿光激发时发出蓝光；当所述第一发光图案形成于所述第二区域的驱动阵列层上时，所述第三发光图案用于发出红光，所述第一发光图案用于在被红光激发时发出绿光，所述第二发光图案用于在被红光激发时发出蓝光；
    形成覆盖所述第三发光图案和所述像素限定层的反射电极。
  13. 根据权利要求12所述的制造方法，其中，所述第一发光图案形成于所述第一区域的驱动阵列层上，所述第一发光图案由光致发光量子点制 得，所述第二发光图案由上转换发光材料制得。
  14. 根据权利要求13所述的制造方法，其中，所述上转换发光材料包括无机物以及掺杂于所述无机物中的稀土离子。
  15. 根据权利要求14所述的制造方法，其中，所述上转换发光材料为纳米颗粒。
  16. 根据权利要求12所述的制造方法，其中，所述第一发光图案形成于所述第一区域的驱动阵列层上，所述第一发光图案和所述第二发光图案均由上转换发光材料制得。
  17. 根据权利要求16所述的制造方法，其中，所述上转换发光材料包括无机物以及掺杂于所述无机物中的稀土离子。
  18. 根据权利要求12所述的制造方法，其中，所述上转换发光材料为纳米颗粒。
  19. 根据权利要求12所述的制造方法，其中，所述无机物包括卤化物、氧化物、硫化物以及硫氧化物中的至少一种，所掺杂的稀土离子包括Er3+(铒离子)、Ho3+(钬离子)、Tm3+(铥离子)、Pr3+(镨离子)、Nd3+(钕离子)以及Yb3+(镱离子)中的至少一种。
  20. 根据权利要求12所述的制造方法，其中，由不透光的材质制成所述像素限定层。
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CN106876433A (zh) * 2017-03-02 2017-06-20 京东方科技集团股份有限公司 有机电致发光组件、显示面板、显示装置及照明装置

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