WO2019000763A1 - 低损耗半导体功率器件 - Google Patents
低损耗半导体功率器件 Download PDFInfo
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- WO2019000763A1 WO2019000763A1 PCT/CN2017/108956 CN2017108956W WO2019000763A1 WO 2019000763 A1 WO2019000763 A1 WO 2019000763A1 CN 2017108956 W CN2017108956 W CN 2017108956W WO 2019000763 A1 WO2019000763 A1 WO 2019000763A1
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- Prior art keywords
- junction
- region
- conductivity type
- power device
- disposed
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 210000000746 body region Anatomy 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000009413 insulation Methods 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
Definitions
- the invention belongs to the field of semiconductor technology, and in particular to a low loss semiconductor power device.
- Power devices include power ICs and power discrete devices.
- Power discrete devices mainly include semiconductor devices such as power MOSFETs, high-power transistors, and IGBTs.
- Power devices are used in almost all electronic manufacturing industries, including notebooks and PCs in the computer field. , servers, displays and various peripherals; mobile phones, telephones and other various terminal and central office equipment in the field of network communication; traditional black and white household appliances and various digital products in the field of consumer electronics; industrial PCs in industrial control, various types Instrumentation and various control equipment.
- power devices can also effectively save energy. Due to the demand for electronic products and the continuous improvement of energy efficiency requirements, the Chinese power device market has maintained a relatively fast development speed.
- Power semiconductor devices are an important part of power electronic circuits.
- An ideal power semiconductor device should have good static and dynamic characteristics. It can withstand high voltage and leakage current in the off state, and can flow through in the on state. High current and very low tube voltage drop have short on and off times during switching, and on-state loss, off-state loss and switching loss are small. At the same time, it can withstand high di/dt and du/dt and has full control function.
- the present invention proposes a low-loss semiconductor power device in which a shunt circuit is provided at the gate.
- a shunt circuit is provided at the gate.
- a low loss semiconductor power device comprising:
- a drain of the MOS power device is disposed at a bottom end thereof, and an epitaxial layer of a first conductivity type is disposed at an upper end of the substrate;
- a body region of a second conductivity type disposed at an upper portion of the channel and the epitaxial layer, wherein the body region covers at least an upper end of two adjacent channels to form an adjacent body region, wherein the body region a source of a first conductivity type is disposed, and an upper end between the adjacent body regions is configured with a gate;
- a first PN junction is disposed on an upper portion of the first independent channel, and an upper end of the epitaxial layer is disposed
- the insulation is configured with a first resistor, an anode of the first PN junction is connected to the gate, and a cathode of the first PN junction is connected to the source through the first resistor.
- the upper end of the epitaxial layer is further insulated and disposed with a second resistor electrically connected to the gate.
- a second PN junction is disposed on an upper portion of the second independent channel, and the second resistor is electrically connected to the gate through the second PN junction, the second resistor and the second PN junction The anode is connected, and the cathode of the second PN junction is connected to the gate.
- an anode of the first PN junction is connected to a common terminal of the second PN junction and the gate.
- an upper portion of the first independent channel is disposed with a first base region of a first conductivity type, a top portion of the first conductivity type is disposed at an upper portion thereof, and a first conductivity type is disposed at an upper end of the first base region The second district.
- an upper portion of the second independent channel is disposed with a second base region of a first conductivity type, a top portion of the second conductivity type is disposed at an upper portion thereof, and a first conductivity type is disposed at an upper end of the second base region The fourth district.
- the first conductivity type is an N type
- the second conductivity type is a P type
- the first area is an anode of the first PN junction
- the second area is the first PN junction
- the cathode the third region is the anode of the second PN junction
- the fourth region is the cathode of the second PN junction.
- the first conductivity type is a P type
- the second conductivity type is an N type
- the second area is an anode of the first PN junction
- the first area is the first PN junction
- the fourth region is the anode of the second PN junction
- the third region is the cathode of the second PN junction.
- the first PN junction is at least two, and each of the first PN junctions is independently disposed in one of the first independent channels, and the anode of each of the first PN junctions is connected in parallel with the anode and the cathode and the cathode are connected in parallel.
- a low loss semiconductor power device which has a faster switching speed
- the switch capacity is larger;
- Figure 1 is a cross-sectional view of a low loss semiconductor power device
- FIG. 2 is a top plan view of a low loss semiconductor power device
- Figure 3 is a partially enlarged schematic view of Figure 2.
- the low loss semiconductor power device proposed by the present invention includes:
- the first conductivity type substrate 700 has a drain of a MOS power device disposed at a bottom end thereof, and an epitaxial layer 200 of a first conductivity type is disposed at an upper end of the substrate 700, and the material of the substrate epitaxial layer 200 is preferably silicon, but Not limited to silicon;
- the second conductivity type channel 100 is disposed in the epitaxial layer at intervals. As shown in FIG. 1, only five channels 100 are shown in this embodiment, and the number thereof may be determined according to specific product design requirements.
- the channel 100 is flush with the upper end of the epitaxial layer 200;
- the body region 300 of the second conductivity type is disposed on the upper portion of the channel 100 and the epitaxial layer 200. Specifically, the body region 300 of the second conductivity type covers an upper portion of the plurality of channels 100 so that the second conductive portion is finally The body region 300 of the type is flush with the upper end of the epitaxial layer 200, wherein the body region 300 covers at least the upper ends of the two adjacent channels 100 to form adjacent body regions, and the body region is configured with the first a conductive source 310, an upper end between the adjacent body regions is provided with a gate 500, thereby constituting a MOS power device;
- first independent channels 110 and second independent channels 120 are not covered by the body region 300 in the channel 100, and a first PN junction is disposed on an upper portion of the first independent channel 110.
- the upper end of the epitaxial layer 200 is insulated and disposed with a first resistor 610.
- the anode of the first PN junction is connected to the gate 500 through a metal line, and the cathode of the first PN junction passes through the first resistor 610.
- the source electrodes 310 are connected in common, and the electrodes and the resistors are connected by metal wires. The prior art is not described in this embodiment.
- the gate When the power device is turned off, the gate has an oscillating voltage. When the oscillating voltage is too high, the first PN junction is conducted to the source, and the first resistor effectively slows down the absorption of the high voltage, thereby avoiding the gate voltage oscillation. When the voltage of the gate is at a normal voltage value, the first PN junction is turned off, the current does not flow through the first PN junction, and the first resistor is not consumed, thereby reducing the loss of the power device and improving the switching of the power device. The capacity effectively eliminates the gate voltage oscillation and the switching speed is faster.
- the gates 500 are all gated gates, that is, the gates are independently disposed at the upper end of each body region, and two adjacent body regions are not connected.
- an insulating film 400 is formed on the upper surface of the power device, a conductive film is formed on the insulating film 400, the conductive film and the insulating film are etched, and the remaining conductive film becomes the gate and the first A resistor, a second resistor 620 is further formed on the conductive film, and the second resistor 620 is connected to the gate 500.
- a second PN junction is disposed on an upper portion of the second independent channel 120, and the second resistor 620 is electrically connected to the gate 500 through the second PN junction, wherein the second A resistor 620 is coupled to the anode of the second PN junction, a cathode of the second PN junction is coupled to the gate 500, and the other end of the second resistor is coupled to the gate control terminal.
- the anode of the first PN junction is connected to the common terminal of the second PN junction cathode and the gate 500.
- the upper portion of the first independent channel 110 is configured with a first base region 111 of a first conductivity type, as shown in FIGS. 2 and 3, and the first region 112 of the second conductivity type is disposed at an upper portion thereof.
- a second region 113 of a first conductivity type is disposed at an upper end of the first base region 111.
- an upper portion of the second independent channel 120 is disposed with a second base region 121 of a first conductivity type, and an upper portion of the second conductive region is disposed with a third region 122 of a second conductivity type, and an upper end of the second base region A fourth region 123 of the first conductivity type is disposed.
- the first conductivity type is an N type
- the second conductivity type is a P type
- the first area is an anode of the first PN junction
- the second area is the A cathode of a PN junction
- the third region being the anode of the second PN junction
- the fourth region being the cathode of the second PN junction.
- the first conductivity type is a P type
- the second conductivity type is an N type
- a second region is an anode of the first PN junction
- the first region is a cathode of the first PN junction
- the fourth region is an anode of the second PN junction
- the third region is The cathode of the second PN junction.
- the first PN junction is at least two, and each of the first PN junctions is independently disposed in one of the first independent channels, and the anode and anode of each of the first PN junctions are connected in parallel, the cathode and the cathode. Parallel to enhance the conduction effect of the gate overvoltage, further reduce the gate voltage oscillation, and stabilize the breaking characteristics of the power device.
- a low-loss semiconductor power device proposed by the present invention has a faster switching speed, a larger switching capacity, and a lower switching loss of the power device.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (9)
- 一种低损耗半导体功率器件,其特征在于,包括:第一导电型的衬底,其底端配置有MOS功率器件的漏极,所述衬底上端配置有第一导电型的外延层;第二导电型的沟道,其间隔配置在所述外延层中;第二导电型的体区,其配置在所述沟道和外延层上部,其中,所述体区至少覆盖在两个相邻所述沟道的上端形成相邻体区,所述体区内配置有第一导电型的源极,所述相邻体区之间的上端配置有栅极;其中,所述沟道中至少存在两个未被所述体区覆盖的第一独立沟道和第二独立沟道,所述第一独立沟道上部配置有第一PN结,所述外延层上端绝缘配置有第一电阻,所述第一PN结的阳极与所述栅极连接,所述第一PN结的阴极通过所述第一电阻与所述源极共接。
- 如权利要求1所述的低损耗半导体功率器件,其特征在于,所述外延层上端还绝缘配置有第二电阻,其与所述栅极导电连接。
- 如权利要求2所述的低损耗半导体功率器件,其特征在于,所述第二独立沟道上部配置有第二PN结,所述第二电阻通过所述第二PN结与所述栅极导电连接,所述第二电阻与所述第二PN结的阳极连接,所述第二PN结的阴极与所述栅极连接。
- 如权利要求3所述的低损耗半导体功率器件,其特征在于,所述第一PN结的阳极连接在所述第二PN结和所述栅极的共接端。
- 如权利要求4所述的低损耗半导体功率器件,其特征在于,所述第一独立沟道的上部配置有第一导电型的第一基区,其上部配置有第二导电型的第一区,所述第一基区上端配置有第一导电型的第二区。
- 如权利要求5所述的低损耗半导体功率器件,其特征在于,所述第二独立沟道的上部配置有第一导电型的第二基区,其上部配置有第二导电型的第三区,所述第二基区上端配置有第一导电型的第四区。
- 如权利要求6所述的低损耗半导体功率器件,其特征在于,所述第一导电型为N型,所述第二导电型为P型,所述第一区为所述第一PN结的阳极,所述第二区为所述第一PN结的阴极,所述第三区为所述第二PN结的阳极,所述第四区为所述第二PN结的阴极。
- 如权利要求6所述的低损耗半导体功率器件,其特征在于,所述第一导电型为P型,所述第二导电型为N型,所述第二区为所述第一PN结的阳极,所述第一区为所述第一PN结的阴极,所述第四区为所述第二PN结的阳极,所述第三区为所述第二PN结的阴极。
- 如权利要求7或8所述的低损耗半导体功率器件,其特征在于,所述第一PN结至少为2个,每一个第一PN结独立配置在一个所述第一独立沟道中,每一个第一PN结的阳极与阳极并联、阴极与阴极并联。
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CN201710502152.5A CN107256865B (zh) | 2017-06-27 | 2017-06-27 | 低损耗半导体功率器件 |
CN201710502152.5 | 2017-06-27 |
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CN107369683B (zh) * | 2017-06-27 | 2020-06-23 | 苏州美天网络科技有限公司 | 抗电磁干扰的功率器件 |
CN107256865B (zh) * | 2017-06-27 | 2020-06-19 | 苏州美天网络科技有限公司 | 低损耗半导体功率器件 |
Citations (3)
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US20010042886A1 (en) * | 1998-04-03 | 2001-11-22 | Fuji Electric, Co., Ltd. | Depletion type MOS semiconductor device and MOS power IC |
CN104409501A (zh) * | 2014-11-10 | 2015-03-11 | 中国科学院微电子研究所 | 碳化硅金属氧化物半导体场效应晶体管 |
CN107256865A (zh) * | 2017-06-27 | 2017-10-17 | 苏州美天网络科技有限公司 | 低损耗半导体功率器件 |
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JP3111576B2 (ja) * | 1992-01-06 | 2000-11-27 | 富士電機株式会社 | 半導体装置 |
EP1624570A1 (en) * | 2004-08-03 | 2006-02-08 | Freescale Semiconductor Inc. (A Delaware Corp) | A semiconductor switch arrangement |
US8614480B2 (en) * | 2011-07-05 | 2013-12-24 | Texas Instruments Incorporated | Power MOSFET with integrated gate resistor and diode-connected MOSFET |
US8946850B2 (en) * | 2011-12-06 | 2015-02-03 | Infineon Technologies Austria Ag | Integrated circuit including a power transistor and an auxiliary transistor |
TW201411809A (zh) * | 2012-09-05 | 2014-03-16 | Silicongear Corp | 功率型金氧半場效電晶體元件 |
US9893175B2 (en) * | 2013-09-30 | 2018-02-13 | Infineon Technologies Austria Ag | Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body |
US10411116B2 (en) * | 2015-04-30 | 2019-09-10 | Suzhou Oriental Semiconductor Co., Ltd. | Semiconductor super-junction power device and manufacturing method therefor |
CN105161491B (zh) * | 2015-09-22 | 2019-03-15 | 苏州东微半导体有限公司 | 一种集成栅极驱动功率器件及其制备方法 |
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- 2017-06-27 CN CN201710502152.5A patent/CN107256865B/zh active Active
- 2017-11-01 WO PCT/CN2017/108956 patent/WO2019000763A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20010042886A1 (en) * | 1998-04-03 | 2001-11-22 | Fuji Electric, Co., Ltd. | Depletion type MOS semiconductor device and MOS power IC |
CN104409501A (zh) * | 2014-11-10 | 2015-03-11 | 中国科学院微电子研究所 | 碳化硅金属氧化物半导体场效应晶体管 |
CN107256865A (zh) * | 2017-06-27 | 2017-10-17 | 苏州美天网络科技有限公司 | 低损耗半导体功率器件 |
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CN107256865A (zh) | 2017-10-17 |
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