WO2018235527A1 - Laminated element and lc filter - Google Patents

Laminated element and lc filter Download PDF

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Publication number
WO2018235527A1
WO2018235527A1 PCT/JP2018/020249 JP2018020249W WO2018235527A1 WO 2018235527 A1 WO2018235527 A1 WO 2018235527A1 JP 2018020249 W JP2018020249 W JP 2018020249W WO 2018235527 A1 WO2018235527 A1 WO 2018235527A1
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WO
WIPO (PCT)
Prior art keywords
electrode
inductor
filter
stacked
capacitor electrode
Prior art date
Application number
PCT/JP2018/020249
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French (fr)
Japanese (ja)
Inventor
浩和 矢▲崎▼
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to JP2019525267A priority Critical patent/JP6677352B2/en
Publication of WO2018235527A1 publication Critical patent/WO2018235527A1/en
Priority to US16/680,756 priority patent/US10930435B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0057—Constructional details comprising magnetic material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10431—Details of mounted components
    • H05K2201/10507—Involving several components
    • H05K2201/1053—Mounted components directly electrically connected to each other, i.e. not via the PCB

Definitions

  • the present invention relates to a stacked device including at least one inductor configured using inductor electrodes and at least one capacitor electrode.
  • the present invention relates to an LC filter manufactured using the above-mentioned stacked element.
  • FIG. 16A shows an LC filter (low pass filter) 1100 disclosed in Patent Document 1.
  • the LC filter 1100 includes a laminate 102 in which a plurality of base material layers (insulator layers) 101a to 101j are stacked. An inductor electrode (coil conductor) 103 and a capacitor electrode (capacitor conductor) 104 are formed between the base layers 101a to 101j as necessary.
  • the LC filter 1100 a plurality of inductor electrodes 103 are connected by via electrodes (via holes conductors) 105, and an inductor is configured inside the laminated body 102. Further, in the LC filter 1100, a capacitor is formed inside the laminate 102 by the pair of capacitor electrodes 104 facing each other. As a result, the LC filter 1100 constitutes an LC filter (low pass filter) formed of the equivalent circuit shown in FIG.
  • the LC filter 1100 since all the inductor electrodes 103 forming the inductor and all the capacitor electrodes 104 forming the capacitor are formed in the laminate 102, the arrangement of the inductor electrode 103 and the capacitor electrode 104 ( Design of placement was difficult. That is, since all the inductor electrodes 103 and all the capacitor electrodes 104 must be disposed so as not to interfere with each other inside the laminate 102 and drawn out so as not to interfere with each other. Placement of the electrode inside 102 was difficult.
  • the LC filter 1100 is disposed in the laminate 102 so that all the inductor electrodes 103 and all the capacitor electrodes 104 do not interfere with each other, and are drawn out so as not to interfere with each other.
  • the laminate 102 may be enlarged.
  • the LC filter 1100 has no countermeasure against the penetration of noise from the outside to the inside and the radiation of the noise from the inside to the outside. Therefore, there is a risk that the LC filter 1100 may malfunction due to noise intruding from the outside, or may affect the functions of other electronic components mounted adjacent to the noise emitted from the inside to the outside. .
  • a multilayer element according to the present invention has a mounting surface, a top surface, and a mounting surface on which a plurality of base material layers are stacked.
  • a laminate having an outer surface including a plurality of side surfaces connecting the upper surface and a top surface, at least one inductor electrode formed between layers of the base layer, and an outer surface or more than the inductor electrode
  • At least one capacitor electrode formed between the base layer layers on the top side and at least two external terminals formed on the outer surface for connection to the outside, and using an inductor electrode, At least one inductor is configured, the inductor is connected between two external terminals, and the at least one inductor and the capacitor electrode are connected.
  • the capacitor electrode can be opposed to an external metal shield to constitute a capacitor.
  • the capacitor electrode can be formed on the top surface of the laminate.
  • the capacitor electrode can be formed on the side of the laminate.
  • the capacitor electrode may be formed on both the top surface and the side surface of the laminate.
  • a high dielectric constant layer of a material having a dielectric constant higher than that of the laminate may be further provided to cover the capacitor electrodes formed on the top surface and the side surfaces.
  • the capacitance generated between the capacitor electrode of the multilayer element and the metal shield can be increased.
  • the external terminal can be formed, for example, on the mounting surface of the laminate.
  • At least one layer of the base material layer is a magnetic material.
  • the inductance value of the internally configured inductor can be increased.
  • an inductor is inserted between the inductor and the capacitor electrode.
  • an LC series resonator can be configured between the signal line and the ground. And the frequency characteristic of LC filter can be improved by the LC series resonator concerned.
  • the LC filter of the present invention comprises the above-described laminated element of the present invention and a metal shield, and the metal shield is disposed so as to cover the laminated element.
  • the capacitor is configured by the capacitance generated between the shield and the capacitor electrode of the laminated element.
  • a space may be provided between the metal shield and the capacitor electrode.
  • capacitance can be easily generated between the metal shield and the capacitor electrode.
  • a metal structure manufactured by processing one metal plate can be used as the metal shield.
  • a substrate may be provided and the stacked element may be mounted on the substrate.
  • a ground terminal be formed on the lower main surface of the substrate, and the metal shield be connected to the ground terminal. In this case, the noise suppression function by the metal shield is improved.
  • an LC filter can be easily manufactured by arranging a metal shield opposite to the capacitor electrode and generating a capacitance between the capacitor electrode and the metal shield.
  • the multilayer element of the present invention is provided with only one of the capacitor electrodes of the pair of capacitors included in the LC filter manufactured using the multilayer element, Inside, the inductor electrode and the capacitor electrode do not easily interfere with each other. Therefore, in the laminated element of the present invention, the arrangement (design of arrangement) of the electrodes inside the laminated body is easy. In particular, when the capacitor electrode is formed on the outer surface of the laminate, the inductor electrode and the capacitor electrode do not interfere with each other in the laminate, and the arrangement of the electrodes in the laminate becomes easier. In addition, in the laminated element of the present invention, since the arrangement of the electrodes inside the laminated body is easy, the laminated body may be able to be miniaturized.
  • the LC filter of the present invention can be easily manufactured using the laminated element of the present invention.
  • the metal shield suppresses the penetration of noise from the outside to the inside and the radiation of the noise from the inside to the outside.
  • FIG. 1A is a perspective view of the stacked element 100 according to the first embodiment as viewed from the top surface side.
  • FIG. 1B is a perspective view of the stacked element 100 as viewed from the mounting surface side.
  • FIG. 2 is an exploded perspective view of the stacked element 100.
  • FIG. 3A is a cross-sectional view of the stacked element 100.
  • FIG. 3B is an equivalent circuit diagram of the stacked element 100.
  • FIG. 4A is a cross-sectional view of the LC filter 150 according to the first embodiment.
  • FIG. 4B is an equivalent circuit diagram of the LC filter 150.
  • FIG. 5A is a frequency characteristic diagram of the LC filter 150.
  • FIG. FIG. 5A is a frequency characteristic diagram of the LC filter 150.
  • FIG. 5B is a frequency characteristic diagram of the LC filter 150 when the thickness of the sealing resin 13 is changed.
  • FIG. 6 is a cross-sectional view of the LC filter 250 according to the second embodiment.
  • FIG. 7 is an exploded perspective view of the stacked element 300 according to the third embodiment.
  • FIG. 8A is a cross-sectional view of the stacked element 300.
  • FIG. 8B is an equivalent circuit diagram of the stacked element 300.
  • FIG. 9 is a cross-sectional view of the stacked element 400 according to the fourth embodiment.
  • FIG. 10 is a cross-sectional view of the stacked element 500 according to the fifth embodiment.
  • FIG. 11A is a cross-sectional view of a stacked element 600 according to the sixth embodiment.
  • FIG. 11B is an equivalent circuit diagram of the stacked element 600.
  • FIG. 12A is a cross-sectional view of a stacked element 700 according to the seventh embodiment.
  • FIG. 12B is an equivalent circuit diagram of the stacked element 700.
  • FIG. 13 is a cross-sectional view of a stacked element 800 according to the eighth embodiment.
  • FIG. 14 is a cross-sectional view of a stacked element 900 according to the ninth embodiment.
  • FIG. 15 is a cross-sectional view of a stacked element 1000 according to the tenth embodiment.
  • FIG. 16A is an exploded perspective view of the LC filter 1100 disclosed in Patent Document 1. As shown in FIG. FIG. 16B is an equivalent circuit diagram of the LC filter 1100.
  • each embodiment exemplarily shows an embodiment of the present invention, and the present invention is not limited to the contents of the embodiment.
  • FIGS. 1A, 1B, 2, 3A, and 3B show a stacked element 100 according to the first embodiment.
  • FIG. 1 (A) is a perspective view of the stacked element 100 as viewed from the top surface side.
  • FIG. 1B is a perspective view of the laminated element 100 as viewed from the mounting surface side.
  • FIG. 2 is an exploded perspective view of the stacked element 100.
  • FIG. 3A is a cross-sectional view of the stacked element 100, and shows a dashed dotted line XX portion in FIG. 1A.
  • FIG. 3B is an equivalent circuit diagram of the stacked element 100.
  • the stacked element 100 includes a stacked body 2 in which base material layers 1a to 1f are stacked.
  • all the base layers 1a to 1f are made of magnetic ceramic.
  • the base layers 1a to 1f may be fired and integrated, and the interface between the layers may be unclear.
  • the laminate 2 has an outer surface formed of a mounting surface B, a top surface U, and four side surfaces S connecting the mounting surface B and the top surface U.
  • a pair of external terminals 3a and 3b is formed on the mounting surface B of the laminate 2.
  • the external terminals 3a and 3b are formed of Ag.
  • the material of the external terminals 3a and 3b is arbitrary, and other types of metals may be used.
  • the capacitor electrode 4 is formed on the top surface U of the laminate 2.
  • the capacitor electrode 4 is formed of Ag.
  • the material of the capacitor electrode 4 is arbitrary, and other types of metals may be used.
  • a plating layer may be formed on the surface of the capacitor electrode 4.
  • the external terminals 3a and 3b described above are formed on the lower main surface of the base layer 1a. Further, via electrodes 5a and 5f are formed to penetrate between both main surfaces of the base material layer 1a. Furthermore, inductor electrodes 6a and 6e are formed on the upper main surface of the base layer 1a. The via electrode 5a connects the external terminal 3a to one end of the inductor electrode 6a, and the via electrode 5f connects the external terminal 3b to one end of the inductor electrode 6e.
  • Via electrodes 5b and 5g are formed to penetrate between both main surfaces of base material layer 1b.
  • the via electrode 5b is connected to the other end of the inductor electrode 6a, and the via electrode 5g is connected to the other end of the inductor electrode 6e.
  • inductor electrodes 6b and 6f are formed on the upper main surface of the base layer 1b. One end of the inductor electrode 6b is connected to the via electrode 5b, and one end of the inductor electrode 6f is connected to the via electrode 5g.
  • Via electrodes 5c and 5h are formed to penetrate between both main surfaces of base material layer 1c.
  • the via electrode 5c is connected to the other end of the inductor electrode 6b, and the via electrode 5h is connected to the other end of the inductor electrode 6f.
  • inductor electrodes 6c and 6g are formed on the upper main surface of the base layer 1c. One end of the inductor electrode 6c is connected to the via electrode 5c, and one end of the inductor electrode 6g is connected to the via electrode 5h.
  • Via electrodes 5d and 5i are formed to penetrate between both main surfaces of the base material layer 1d.
  • the via electrode 5d is connected to the other end of the inductor electrode 6c, and the via electrode 5i is connected to the other end of the inductor electrode 6g.
  • inductor electrodes 6d and 6h are formed on the upper main surface of the base layer 1d. One end of the inductor electrode 6d is connected to the via electrode 5d, and one end of the inductor electrode 6h is connected to the via electrode 5i.
  • Via electrodes 5e and 5j are formed to penetrate between the respective main surfaces of each of the base material layers 1e and 1f.
  • the via electrode 5e is connected to the other end of the inductor electrode 6d, and the via electrode 5j is connected to the other end of the inductor electrode 6h.
  • the capacitor electrode 4 described above is formed on the upper main surface of the base material layer 1 f. Via electrodes 5 e and 5 j are connected to the capacitor electrode 4 respectively.
  • the via electrodes 5a to 5j and the inductor electrodes 6a to 6h are formed of Ag.
  • the materials of the via electrodes 5a to 5j and the inductor electrodes 6a to 6h are arbitrary, and other types of metals may be used.
  • the base layers 1a to 1f are stacked and integrated to form the stacked body 2, whereby two inductors L1 and L2 are formed in the stacked body 2.
  • Inductor L1 starts from external terminal 3a and ends at capacitor electrode 4. Via electrode 5a, inductor electrode 6a, via electrode 5b, inductor electrode 6b, via electrode 5c, inductor electrode 6c, via electrode 5d, inductor electrode 6d , And a conductive path connecting the via electrodes 5e in order.
  • Inductor L2 starts from external terminal 3b and ends at capacitor electrode 4. Via electrode 5f, inductor electrode 6e, via electrode 5g, inductor electrode 6f, via electrode 5h, inductor electrode 6g, via electrode 5i, inductor electrode 6h , And a conductive path connecting the via electrodes 5j in order.
  • inductor L1 and inductor L2 and capacitor electrode 4 are respectively connected by via electrode 5e and via electrode 5j, no parasitic inductor is generated between inductor L1 and inductor L2, and inductor L1 and inductor L2 are also formed. Since the current flowing in the current flows through the capacitor electrode 4 having a large area, the resistance value of the internal wiring can be reduced.
  • the stacked element 100 has the equivalent circuit shown in FIG. That is, the inductor L 1 is connected between the external terminal 3 a and the capacitor electrode 4, and the inductor L 2 is connected between the external terminal 3 b and the capacitor electrode 4.
  • the capacitor electrode 4 is formed on the outer surface (upper surface U) of the multilayer body 2, only the inductors L1 and L2 are formed inside the multilayer body 2. Therefore, in the laminated element 100, the arrangement of the electrodes inside the laminated body 2 is easy. Moreover, the laminated body 2 is miniaturized.
  • the inductors L1 and L2 have large inductance values.
  • the inductance value of each of the inductors L1 and L2 is arbitrary, and can be increased or decreased by increasing or decreasing the number of inductor electrodes by increasing or decreasing the number of base material layers.
  • the stacked element 100 can be manufactured, for example, by the following method.
  • the ceramic green sheet is formed, for example, mainly of magnetic ferrite.
  • holes for forming the via electrodes 5a to 5j are formed in predetermined ceramic green sheets, for example, by a method such as laser light irradiation.
  • holes for forming the via electrodes 5a to 5j are filled with a conductive paste.
  • conductive paste patterns for forming external terminals 3a and 3b, capacitor electrodes 4 and inductor electrodes 6a to 6h are formed on the main surface of the ceramic green sheet by screen printing of a conductive paste, for example. .
  • the ceramic green sheets are laminated in a predetermined order, and integrated by pressing and heating, for example, to prepare an unfired laminate.
  • the unfired laminate is fired with a predetermined profile to produce a laminate 2.
  • the inductors L1 and L2 are formed in the laminate 2.
  • External terminals 3 a and 3 b and a capacitor electrode 4 are formed on the outer surface of the laminate 2.
  • a plating layer is formed on the surface of the capacitor electrode 4 3a, 3b to complete the stacked element 100.
  • LC filter 150 Next, the LC filter 150 according to the first embodiment will be described.
  • the LC filter 150 is manufactured using the stacked element 100 according to the first embodiment described above.
  • FIG. 4 The LC filter 150 is shown to FIG. 4 (A) and (B). However, FIG. 4A is a cross-sectional view of the LC filter 150. FIG. 4B is an equivalent circuit diagram of the LC filter 150. As shown in FIG. 4 (A) and (B).
  • FIG. 4A is a cross-sectional view of the LC filter 150.
  • FIG. 4B is an equivalent circuit diagram of the LC filter 150. As shown in FIG.
  • the LC filter 150 includes a substrate 7.
  • a substrate 7 In the present embodiment, a multilayer substrate in which a plurality of ceramic layers 7 a and 7 b are stacked is used as the substrate 7.
  • the material of the substrate 7 is arbitrary, and for example, a resin may be used instead of the ceramic.
  • the substrate 7 may be a single layer substrate instead of a multilayer substrate.
  • the external terminals 8a, 8 b, 8 c are formed on the lower main surface of the substrate 7.
  • the external terminals 8a and 8b are input / output terminals connected to the signal line, respectively.
  • the external terminal 8c is a ground terminal connected to the ground.
  • Land electrodes 9 a and 9 b are formed on the upper main surface of the substrate 7. Further, on the upper main surface of the substrate 7, a connection electrode 10 connected to a metal shield 14 described later is formed.
  • the wiring electrode 11 is formed inside the substrate 7 by a via electrode formed through both main surfaces of the ceramic layers 7a and 7b and an interlayer electrode formed between the ceramic layers 7a and 7b. It is formed.
  • the external terminal 8 a and the land electrode 9 a are connected by the wiring electrode 11.
  • the external terminal 8 b and the land electrode 9 b are connected by the wiring electrode 11.
  • the external terminal 8 c and the connection electrode 10 are connected by the wiring electrode 11.
  • the materials of the external terminals 8a, 8b and 8c, the land electrodes 9a and 9b, the connection electrode 10, and the wiring electrodes (via electrodes, interlayer electrodes) 11 are arbitrary, but Cu, Ni, etc. can be used, for example. .
  • a plating layer may be formed on the surfaces of the external terminals 8a, 8b, 8c, the land electrodes 9a, 9b, and the connection electrode 10.
  • the material and structure of a plating layer are arbitrary, for example, a 1st layer can form Ni plating layer and a 2nd layer can be formed in 2 layer structure of Sn plating layer.
  • the stacked element 100 is mounted on the upper major surface of the substrate 7 by the solder 12. More specifically, the external terminal 3 a of the stacked element 100 is joined to the land electrode 9 a by the solder 12. Further, the external terminal 3 b of the stacked element 100 is joined to the land electrode 9 b by the solder 12. Note that, instead of the solder 12, the laminated element 100 may be mounted by, for example, a conductive adhesive.
  • a sealing resin 13 is formed on the upper major surface of the substrate 7 on which the stacked element 100 is mounted so as to cover the stacked element 100.
  • an epoxy resin having a dielectric constant of about 3.5 to 5.0 and having at least one of a thermosetting property and a photocurable property is used as the sealing resin 13.
  • the material of the sealing resin 13 only needs to have an insulating property, it can be arbitrarily selected.
  • a silicone resin may be used.
  • the dielectric constant of the sealing resin 13 is also arbitrary.
  • a metal shield 14 is formed to cover the outer surface of the sealing resin 13.
  • the metal shield 14 also covers a part of the end face of the substrate 7.
  • the metal shield 14 is formed in three layers of an adhesive layer, a conductive layer, and a protective layer, and the total thickness of the three layers is 100 ⁇ m.
  • the adhesion layer may be omitted.
  • SUS, Ti, Cr, Ni or the like can be used as the material of the adhesion layer and the protective layer.
  • a material of the conductive layer for example, Cu, Ag, Al or the like can be used.
  • the metal shield 14 is connected to the connection electrode 10 formed on the upper main surface of the substrate 7. As described above, since the connection electrode 10 is connected to the external terminal 8c which is the ground terminal formed on the lower main surface of the substrate 7 by the wiring electrode 11, the metal shield 14 is grounded to the ground. .
  • the thickness was 50 ⁇ m.
  • a capacitor C1 is configured by the capacitance generated between the capacitor electrode 4 formed on the top surface U of the stacked element 100 and the metal shield 14.
  • the LC filter 150 has the equivalent circuit shown in FIG. 4 (B).
  • the LC filter 150 constitutes a T-type low pass filter.
  • FIG. 5A schematically shows frequency characteristics of the LC filter 150. As shown in FIG.
  • the frequency characteristics of the LC filter 150 can be adjusted by increasing or decreasing the thickness of the sealing resin 13 between the capacitor electrode 4 and the metal shield 14. That is, as shown in FIG. 5B, the resonance frequency can be moved to the low frequency side by reducing the thickness of the sealing resin 13 and increasing the capacitance value of the capacitor C1. Conversely, by increasing the thickness of the sealing resin 13 and reducing the capacitance value of the capacitor C1, the resonance frequency can be moved to the high frequency side.
  • the LC filter 150 can be manufactured, for example, by the following method.
  • the substrate 7 is prepared. On the substrate 7, external terminals 8a, 8b, 8c, land electrodes 9a, 9b, connection electrodes 10, and wiring electrodes 11 are formed in advance.
  • the stacked element 100 is mounted on the land electrodes 9 a and 9 b of the substrate 7. Specifically, first, cream solder is printed on the land electrodes 9a and 9b. Next, the external terminals 3a and 3b of the stacked element 100 are placed on the cream solder printed on the land electrodes 9a and 9b. Next, the cream solder is heated to melt and then cooled to solidify the cream solder to form the solder 12, and the land terminals 9a and 9b are joined to the external terminals 3a and 3b by the solder 12.
  • the sealing resin 13 is formed on the upper main surface of the substrate 7 on which the stacked element 100 is mounted. Specifically, first, the upper major surface of the substrate 7 on which the stacked element 100 is mounted is filled with an uncured resin. Next, at least one of heating and light irradiation is applied, and the resin is cured to form the sealing resin 13.
  • the metal shield 14 is formed by sputtering, for example, so as to cover the outer surface of the sealing resin 13 and a part of the end face of the substrate 7, thereby completing the LC filter 150.
  • LC filter 150 Although the case of manufacturing one LC filter 150 has been described above, a mother substrate in which each substrate 7 is arranged in a matrix is prepared, and a large number of LC filters 150 are manufactured collectively. After forming the sealing resin 13 on top, the LC filter 150 may be divided.
  • FIG. 6 shows an LC filter 250 according to the second embodiment. However, FIG. 6 is a cross-sectional view of the LC filter 250.
  • the LC filter 250 also uses the stacked element 100 according to the first embodiment. However, the LC filter 250 omits the sealing resin 13 and the metal shield 14 formed on the outer surface of the sealing resin 13 included in the LC filter 150, and instead, uses one metal plate. The metal structure 24 processed and produced is used as a metal shield. The following briefly describes differences from the LC filter 150.
  • the LC filter 250 includes a substrate 27.
  • the connection electrode 10 is partially formed on the upper main surface.
  • the connection electrode 20 is annularly formed in the vicinity of the outer edge of the upper main surface.
  • the connection electrode 20 is connected to the external terminal 8 c which is a ground terminal via the wiring electrode 11.
  • the stacked element 100 is mounted on the upper main surface of the substrate 27.
  • the LC filter 250 includes the metal structure 24 manufactured by processing one metal plate as a metal shield.
  • the metal structure 24 is joined by a solder 22 to a connection electrode 20 formed on the upper major surface of the substrate 27.
  • a space is formed between the capacitor electrode 4 formed on the top surface of the stacked element 100 and the metal structure 24.
  • the distance between the capacitor electrode 4 and the metal structure 24 is the same as the thickness of the sealing resin 13 between the capacitor electrode 4 and the metal shield 14 of the LC filter 150 according to the first embodiment. , 50 ⁇ m.
  • a capacitor C1 is configured by a capacitance generated between the capacitor electrode 4 and the metal structure 24.
  • FIGS. 7, 8A and 8B show a stacked element 300 according to the third embodiment.
  • FIG. 7 is an exploded perspective view of the stacked element 300.
  • FIG. 8A is a cross-sectional view of the stacked element 300.
  • FIG. 8B is an equivalent circuit diagram of the stacked element 300.
  • the multilayer element 300 includes the inductor electrode 6d of the inductor L1 and the inductor electrode of the inductor L2 respectively formed on the upper main surface of the base layer 1d. 6 h and 6 h were connected to each other at the connection point Y, and then connected to the capacitor electrode 4 via the via electrode 35 k formed through the base material layers 1 e and 1 f.
  • the inductor L3 is configured by the via electrode 35k between the connection point Y of the inductor L1 and the inductor L2 and the capacitor electrode 4.
  • the inductance values of the inductors L1 and L2 of the multilayer element 300 are respectively smaller than the inductance values of the inductors L1 and L2 of the multilayer element 100 as the inductor length is shorter.
  • the inductor L3 and the capacitor C1 constitute an LC series resonator.
  • the attenuation on the high frequency side of the passband is enhanced by providing the LC series resonator.
  • FIG. 9 shows a stacked element 400 according to the fourth embodiment. However, FIG. 9 is a cross-sectional view of the stacked element 400.
  • the capacitor electrode 4 is formed on the top surface U of the stacked body 2.
  • the capacitor electrode 44 is formed on the side surface S of the stacked body 2. Then, the inductor electrode 6d of the inductor L1 and the inductor electrode 6h of the inductor L2 are connected to the capacitor electrode 44 via the via electrode and the interlayer electrode formed between the base layers, respectively.
  • the capacitor electrode 44 may be formed on the side surface S of the laminate 2.
  • the LC filter can be manufactured using the stacked element 400 according to the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
  • FIG. 10 shows a stacked element 500 according to the fifth embodiment. However, FIG. 10 is a cross-sectional view of the stacked element 500.
  • the capacitor electrode 4 is formed on the top surface U of the multilayer body 2, and the capacitor electrode 44 is formed on the side surface S of the multilayer body 2.
  • the inductor electrode 6d of the inductor L1 and the inductor electrode 6h of the inductor L2 are connected to the capacitor electrode 4 and the capacitor electrode 44 via the via electrode and the interlayer electrode formed between the layers of the base layer, respectively. .
  • a plurality of capacitor electrodes 4 and 44 may be formed on the outer surface of the laminate 2.
  • An LC filter can be manufactured using the stacked element 500 by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
  • FIGS. 11A and 11B show a stacked element 600 according to the sixth embodiment.
  • FIG. 11A is a cross-sectional view of the stacked element 600.
  • FIG. 11B is an equivalent circuit diagram of the stacked element 600.
  • one inductor L61 is formed inside the multilayer body 2 using a via electrode and an inductor electrode. Then, one end of the inductor L61 is connected to the external terminal 3a, and the other end is connected to the external terminal 3b. Further, the external terminal 3a is connected to the capacitor electrode 4 formed on the top surface U of the laminate 2 using a via electrode.
  • the stacked element 600 is shown in FIG. 11B when the LC filter is configured by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
  • an L-type filter is configured.
  • Stacked Device 700 12A and 12B show a stacked element 700 according to a seventh embodiment.
  • FIG. 12A is a cross-sectional view of the stacked element 700.
  • FIG. 12B is an equivalent circuit diagram of the stacked element 700.
  • one inductor L71 is formed inside the multilayer body 2 using a via electrode and an inductor electrode. Then, one end of the inductor L71 is connected to the external terminal 3a, and the other end is connected to the external terminal 3b. Further, two capacitor electrodes 74 a and 74 b are formed on the top surface U of the multilayer body 2. The external terminal 3a is connected to the capacitor electrode 74a using a via electrode, and the external terminal 3b is connected to the capacitor electrode 74b using a via electrode.
  • the stacked element 700 is shown in FIG. 12B when the LC filter is configured by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment. As such, a ⁇ -type filter is configured.
  • FIG. 13 shows a stacked element 800 according to the eighth embodiment. However, FIG. 13 is a cross-sectional view of the stacked element 800.
  • the stacked element 800 a part of the configuration of the stacked element 100 according to the first embodiment is modified. Specifically, in the laminated element 100, all of the base layers 1a to 1f constituting the laminated body 2 are made of magnetic ceramic. In the laminated element 800, instead of this, only the base material layer 1c was made of nonmagnetic ceramic.
  • the direct current superposition characteristics of the inductor L1 and the inductor L2 are improved by manufacturing the base material layer 1c with nonmagnetic ceramic.
  • An LC filter can be manufactured using the stacked element 800 according to the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
  • FIG. 14 shows a stacked element 900 according to the ninth embodiment. However, FIG. 14 is a cross-sectional view of the stacked element 900.
  • the stacked element 900 has a configuration added to the stacked element 100 according to the first embodiment.
  • stacked element 900 is made of a material having a dielectric constant higher than that of stacked body 2 (base layers 1 a to 1 f) so as to cover capacitor electrode 4 formed on top surface U of stacked body 2.
  • a dielectric layer 91 was formed.
  • a dielectric material having a dielectric constant of 50 or more is used for the high dielectric constant layer 91, and after the laminate 2 is produced by firing, the dielectric material is applied to the top surface U of the laminate 2 It formed.
  • the dielectric constant of the magnetic ceramic laminate 2 (base layers 1a to 1f) is approximately 10 to 15.
  • the stacked element 900 has a method similar to that of the LC filter 150 according to the first embodiment or the second embodiment by forming the high dielectric constant layer 91 covering the capacitor electrode 4 on the top surface U of the stacked body 2.
  • the capacitor C1 has a large capacitance value.
  • FIG. 15 shows a stacked element 1000 according to the tenth embodiment. However, FIG. 15 is a cross-sectional view of the stacked element 1000.
  • the multilayer element 1000 is modified in part of the configuration of the multilayer element 100 according to the first embodiment.
  • the multilayer body 2 is composed of six base layers 1a to 1f of magnetic ceramic.
  • a base layer 1g made of a high dielectric constant ceramic is further provided on the base layer 1f of the multilayer body 2.
  • the seven base layers 1a to 1g are fired and integrated to constitute a laminate 2.
  • the capacitor electrode 4 is formed between the base material layer 1 f and the base material layer 1 g.
  • the high dielectric constant ceramic of the base material layer 1 g for example, one having a dielectric constant of 20 or more is preferably used.
  • the dielectric constant of the base layers 1a to 1f of the magnetic ceramic is approximately 10 to 15.
  • the multilayer element 900 has the same method as the LC filter 150 according to the first embodiment or the LC filter 250 according to the second embodiment by adding the base material layer 1 g made of high dielectric constant ceramic to the laminate 2.
  • the capacitor C1 has a large capacitance value.
  • the LC filter 250 has been described.
  • the present invention is not limited to the contents described above, and various modifications can be made in accordance with the spirit of the invention.
  • the number, formation position, connection method, and the like of the inductors formed inside the laminated body 2 such as the laminated element 100 are arbitrary, and the present invention is not limited to the contents described above. Further, the number of capacitor electrodes formed in the laminate 2 and the formation position are also arbitrary, and the present invention is not limited to the contents described above.
  • the number of layers of the base material layer which comprises the laminated bodies 2, such as laminated element 100, a material, etc. are arbitrary, and it is not limited to the content mentioned above.
  • an LC filter is obtained by a method different from the method shown for the LC filter 150 according to the first embodiment or the method shown for the LC filter 250 according to the second embodiment. May be produced.

Abstract

The present invention provides a laminated element with which a LC filter can be easily manufactured by arranging a metal shield to face a capacitor electrode 4 and generating capacitance between the capacitor electrode 4 and the metal shield. The present invention is provided with: a laminated body 2 obtained by laminating base material layers 1a-1f; inductor electrodes 6a-6h; the capacitor electrode 4 formed on the outer surface; and external terminals 3a, 3b. Inductors L1, L2 are configured by using the inductor electrodes 6a-6h. The inductors L1, L2 are connected between the external terminals 3a, 3b, and the inductors L1, L2 are connected to the capacitor electrode 4.

Description

積層型素子およびＬＣフィルタStacked element and LC filter
　本発明は、インダクタ電極を使って構成された少なくとも１つのインダクタと、少なくとも１つのキャパシタ電極と、を備えた積層型素子に関する。 The present invention relates to a stacked device including at least one inductor configured using inductor electrodes and at least one capacitor electrode.
　また、本発明は、上記積層型素子を使って作製されたＬＣフィルタに関する。 Further, the present invention relates to an LC filter manufactured using the above-mentioned stacked element.
　積層体の内部に、インダクタとキャパシタとを形成したＬＣフィルタが、通信機器などの電子機器に広く使用されている。そのようなＬＣフィルタが、特許文献１（特開２０１３-２１４４９号公報）に開示されている。図１６（Ａ）に、特許文献１に開示されたＬＣフィルタ（ローパスフィルタ）１１００を示す。 An LC filter in which an inductor and a capacitor are formed in a laminate is widely used in electronic devices such as communication devices. Such an LC filter is disclosed in Patent Document 1 (Japanese Patent Application Laid-Open No. 2013-21449). FIG. 16A shows an LC filter (low pass filter) 1100 disclosed in Patent Document 1.
　ＬＣフィルタ１１００は、複数の基材層（絶縁体層）１０１ａ～１０１ｊが積層された積層体１０２を備えている。基材層１０１ａ～１０１ｊの層間に、必要に応じて、インダクタ電極（コイル導体）１０３やキャパシタ電極（コンデンサ導体）１０４が形成されている。 The LC filter 1100 includes a laminate 102 in which a plurality of base material layers (insulator layers) 101a to 101j are stacked. An inductor electrode (coil conductor) 103 and a capacitor electrode (capacitor conductor) 104 are formed between the base layers 101a to 101j as necessary.
　ＬＣフィルタ１１００は、複数のインダクタ電極１０３がビア電極（ビアホール導体）１０５によって接続されて、積層体１０２の内部にインダクタが構成されている。また、ＬＣフィルタ１１００は、対向する１対のキャパシタ電極１０４によって、積層体１０２の内部にキャパシタが構成されている。この結果、ＬＣフィルタ１１００は、図１６（Ｂ）に示す等価回路からなるＬＣフィルタ（ローパスフィルタ）を構成している。 In the LC filter 1100, a plurality of inductor electrodes 103 are connected by via electrodes (via holes conductors) 105, and an inductor is configured inside the laminated body 102. Further, in the LC filter 1100, a capacitor is formed inside the laminate 102 by the pair of capacitor electrodes 104 facing each other. As a result, the LC filter 1100 constitutes an LC filter (low pass filter) formed of the equivalent circuit shown in FIG.
特開２０１３-２１４４９号公報JP, 2013-21449, A
　ＬＣフィルタ１１００は、積層体１０２の内部に、インダクタを構成する全てのインダクタ電極１０３と、キャパシタを構成する全てのキャパシタ電極１０４とが形成されているため、インダクタ電極１０３およびキャパシタ電極１０４の配置（配置の設計）が難しかった。すなわち、積層体１０２の内部に、全てのインダクタ電極１０３と全てのキャパシタ電極１０４とを、相互に干渉しないように配置し、かつ、相互に干渉しないように外部に引き出さなければならないため、積層体１０２の内部の電極の配置が難しかった。また、ＬＣフィルタ１１００は、積層体１０２の内部に、全てのインダクタ電極１０３と全てのキャパシタ電極１０４とを、相互に干渉しないように配置し、かつ、相互に干渉しないように外部に引き出すために、積層体１０２が大型化してしまう場合があった。 In the LC filter 1100, since all the inductor electrodes 103 forming the inductor and all the capacitor electrodes 104 forming the capacitor are formed in the laminate 102, the arrangement of the inductor electrode 103 and the capacitor electrode 104 ( Design of placement was difficult. That is, since all the inductor electrodes 103 and all the capacitor electrodes 104 must be disposed so as not to interfere with each other inside the laminate 102 and drawn out so as not to interfere with each other. Placement of the electrode inside 102 was difficult. In addition, the LC filter 1100 is disposed in the laminate 102 so that all the inductor electrodes 103 and all the capacitor electrodes 104 do not interfere with each other, and are drawn out so as not to interfere with each other. The laminate 102 may be enlarged.
　また、ＬＣフィルタ１１００は、外部から内部へのノイズの侵入、および、内部から外部へのノイズの放射に対して、何ら対策が講じられていなかった。そのため、ＬＣフィルタ１１００は、外部から内部に浸入したノイズによって誤作動する虞や、内部から外部に放出されたノイズによって隣接して実装された他の電子部品の機能に影響を与える虞があった。 In addition, the LC filter 1100 has no countermeasure against the penetration of noise from the outside to the inside and the radiation of the noise from the inside to the outside. Therefore, there is a risk that the LC filter 1100 may malfunction due to noise intruding from the outside, or may affect the functions of other electronic components mounted adjacent to the noise emitted from the inside to the outside. .
　本発明は、上述した従来の課題を解決するためになされたものであり、その手段として本発明の積層型素子は、複数の基材層が積層され、実装面と、天面と、実装面と天面とを繋ぐ複数の側面とを含む外表面を有する積層体と、基材層の層間に形成された、少なくとも１つのインダクタ電極と、外表面に形成された、または、インダクタ電極よりも天面側の基材層の層間に形成された、少なくとも１つのキャパシタ電極と、外表面に形成された、外部に接続するための少なくとも２つの外部端子と、を備え、インダクタ電極を使って、少なくとも１つのインダクタが構成され、２つの外部端子の間にインダクタが接続され、かつ、少なくとも１つのインダクタとキャパシタ電極とが接続されたものとした。なお、キャパシタ電極は、外部の金属シールドと対向させて、キャパシタを構成することができる。 The present invention has been made to solve the above-described conventional problems, and as a means therefor, a multilayer element according to the present invention has a mounting surface, a top surface, and a mounting surface on which a plurality of base material layers are stacked. A laminate having an outer surface including a plurality of side surfaces connecting the upper surface and a top surface, at least one inductor electrode formed between layers of the base layer, and an outer surface or more than the inductor electrode At least one capacitor electrode formed between the base layer layers on the top side and at least two external terminals formed on the outer surface for connection to the outside, and using an inductor electrode, At least one inductor is configured, the inductor is connected between two external terminals, and the at least one inductor and the capacitor electrode are connected. The capacitor electrode can be opposed to an external metal shield to constitute a capacitor.
　キャパシタ電極は、積層体の天面に形成することができる。あるいは、キャパシタ電極は、積層体の側面に形成することができる。また、キャパシタ電極は、積層体の天面と側面の両方に形成してもよい。 The capacitor electrode can be formed on the top surface of the laminate. Alternatively, the capacitor electrode can be formed on the side of the laminate. Also, the capacitor electrode may be formed on both the top surface and the side surface of the laminate.
　天面や側面に形成されたキャパシタ電極を覆う、積層体よりも誘電率の高い材質の高誘電率層を、さらに備えるようにしてもよい。この場合には、当該積層型素子を使って作製したＬＣフィルタにおいて、積層型素子のキャパシタ電極と、金属シールドとの間に発生する容量を大きくすることができる。 A high dielectric constant layer of a material having a dielectric constant higher than that of the laminate may be further provided to cover the capacitor electrodes formed on the top surface and the side surfaces. In this case, in the LC filter manufactured using the multilayer element, the capacitance generated between the capacitor electrode of the multilayer element and the metal shield can be increased.
　外部端子は、たとえば、積層体の実装面に形成することができる。 The external terminal can be formed, for example, on the mounting surface of the laminate.
　基材層の少なくとも1層が、磁性体であることも好ましい。この場合には、内部に構成されたインダクタのインダクタンス値を大きくすることができる。 It is also preferable that at least one layer of the base material layer is a magnetic material. In this case, the inductance value of the internally configured inductor can be increased.
　インダクタとキャパシタ電極との間に、さらに別のインダクタが挿入されることも好ましい。この場合には、当該積層型素子を使って作製したＬＣフィルタにおいて、信号ラインとグランドとの間にＬＣ直列共振器を構成することができる。そして、当該ＬＣ直列共振器によって、ＬＣフィルタの周波数特性を改善することができる。 Preferably, another inductor is inserted between the inductor and the capacitor electrode. In this case, in an LC filter manufactured using the stacked element, an LC series resonator can be configured between the signal line and the ground. And the frequency characteristic of LC filter can be improved by the LC series resonator concerned.
　本発明のＬＣフィルタは、上述した従来の課題を解決するために、上述した本発明の積層型素子と、金属シールドと、を備え、金属シールドは、積層型素子を覆うように配置され、金属シールドと、積層型素子のキャパシタ電極との間に発生する容量によりキャパシタを構成するようにした。 In order to solve the above-mentioned conventional problems, the LC filter of the present invention comprises the above-described laminated element of the present invention and a metal shield, and the metal shield is disposed so as to cover the laminated element. The capacitor is configured by the capacitance generated between the shield and the capacitor electrode of the laminated element.
　金属シールドとキャパシタ電極との間に、さらに樹脂を設けることも好ましい。この場合には、樹脂の有する誘電率に応じて、金属シールドとキャパシタ電極との間に大きな容量を発生させることができる。 It is also preferable to further provide a resin between the metal shield and the capacitor electrode. In this case, a large capacitance can be generated between the metal shield and the capacitor electrode according to the dielectric constant of the resin.
　あるいは、金属シールドとキャパシタ電極との間を、空間（空気）にしてもよい。この場合には、金属シールドとキャパシタ電極との間に、容易に容量を発生させることができる。なお、この場合には、金属シールドとして、たとえば、1枚の金属板を加工して作製された金属構造体を用いることができる。 Alternatively, a space (air) may be provided between the metal shield and the capacitor electrode. In this case, capacitance can be easily generated between the metal shield and the capacitor electrode. In this case, for example, a metal structure manufactured by processing one metal plate can be used as the metal shield.
　さらに基板を備え、積層型素子を基板に実装してもよい。この場合において、基板の下側主面にグランド端子が形成され、金属シールドがグランド端子に接続されることも好ましい。この場合には、金属シールドによるノイズ抑制機能が向上する。 Furthermore, a substrate may be provided and the stacked element may be mounted on the substrate. In this case, it is also preferable that a ground terminal be formed on the lower main surface of the substrate, and the metal shield be connected to the ground terminal. In this case, the noise suppression function by the metal shield is improved.
　本発明の積層型素子は、キャパシタ電極に対向させて金属シールドを配置し、キャパシタ電極と金属シールドとの間に容量を発生させることによって、容易にＬＣフィルタを作製することができる。 In the multilayer element of the present invention, an LC filter can be easily manufactured by arranging a metal shield opposite to the capacitor electrode and generating a capacitance between the capacitor electrode and the metal shield.
　また、本発明の積層型素子は、当該積層型素子を使用して作製するＬＣフィルタが備えるキャパシタの１対のキャパシタ電極のうち、一方のキャパシタ電極のみを備えたものであるため、積層体の内部において、インダクタ電極とキャパシタ電極とが干渉しにくい。したがって、本発明の積層型素子は、積層体の内部の電極の配置（配置の設計）が容易である。なお、特に、キャパシタ電極を積層体の外表面に形成した場合には、積層体の内部においてインダクタ電極とキャパシタ電極とが干渉しないため、積層体の内部の電極の配置がさらに容易になる。また、本発明の積層型素子は、積層体の内部の電極の配置が容易であるため、積層体を小型化できる場合がある。 In addition, since the multilayer element of the present invention is provided with only one of the capacitor electrodes of the pair of capacitors included in the LC filter manufactured using the multilayer element, Inside, the inductor electrode and the capacitor electrode do not easily interfere with each other. Therefore, in the laminated element of the present invention, the arrangement (design of arrangement) of the electrodes inside the laminated body is easy. In particular, when the capacitor electrode is formed on the outer surface of the laminate, the inductor electrode and the capacitor electrode do not interfere with each other in the laminate, and the arrangement of the electrodes in the laminate becomes easier. In addition, in the laminated element of the present invention, since the arrangement of the electrodes inside the laminated body is easy, the laminated body may be able to be miniaturized.
　また、本発明のＬＣフィルタは、本発明の積層型素子を使用して、容易に作製することができる。 In addition, the LC filter of the present invention can be easily manufactured using the laminated element of the present invention.
　また、本発明のＬＣフィルタは、金属シールドによって、外部から内部へのノイズの侵入、および、内部から外部へのノイズの放射が抑制されている。 Further, in the LC filter of the present invention, the metal shield suppresses the penetration of noise from the outside to the inside and the radiation of the noise from the inside to the outside.
図１（Ａ）は、第１実施形態にかかる積層型素子１００を天面側から見た斜視図である。図１（Ｂ）は、積層型素子１００を実装面側から見た斜視図である。FIG. 1A is a perspective view of the stacked element 100 according to the first embodiment as viewed from the top surface side. FIG. 1B is a perspective view of the stacked element 100 as viewed from the mounting surface side. 図２は、積層型素子１００の分解斜視図である。FIG. 2 is an exploded perspective view of the stacked element 100. 図３（Ａ）は、積層型素子１００の断面図である。図３（Ｂ）は、積層型素子１００の等価回路図である。FIG. 3A is a cross-sectional view of the stacked element 100. FIG. 3B is an equivalent circuit diagram of the stacked element 100. 図４（Ａ）は、第１実施形態にかかるＬＣフィルタ１５０の断面図である。図４（Ｂ）は、ＬＣフィルタ１５０の等価回路図である。FIG. 4A is a cross-sectional view of the LC filter 150 according to the first embodiment. FIG. 4B is an equivalent circuit diagram of the LC filter 150. As shown in FIG. 図５（Ａ）は、ＬＣフィルタ１５０の周波数特性図である。図５（Ｂ）は、封止樹脂１３の厚みを変化させた場合のＬＣフィルタ１５０の周波数特性図である。FIG. 5A is a frequency characteristic diagram of the LC filter 150. As shown in FIG. FIG. 5B is a frequency characteristic diagram of the LC filter 150 when the thickness of the sealing resin 13 is changed. 図６は、第２実施形態にかかるＬＣフィルタ２５０の断面図である。FIG. 6 is a cross-sectional view of the LC filter 250 according to the second embodiment. 図７は、第３実施形態にかかる積層型素子３００の分解斜視図である。FIG. 7 is an exploded perspective view of the stacked element 300 according to the third embodiment. 図８（Ａ）は、積層型素子３００の断面図である。図８（Ｂ）は、積層型素子３００の等価回路図である。FIG. 8A is a cross-sectional view of the stacked element 300. FIG. 8B is an equivalent circuit diagram of the stacked element 300. 図９は、第４実施形態にかかる積層型素子４００の断面図である。FIG. 9 is a cross-sectional view of the stacked element 400 according to the fourth embodiment. 図１０は、第５実施形態にかかる積層型素子５００の断面図である。FIG. 10 is a cross-sectional view of the stacked element 500 according to the fifth embodiment. 図１１（Ａ）は、第６実施形態にかかる積層型素子６００の断面図である。図１１（Ｂ）は、積層型素子６００の等価回路図である。FIG. 11A is a cross-sectional view of a stacked element 600 according to the sixth embodiment. FIG. 11B is an equivalent circuit diagram of the stacked element 600. 図１２（Ａ）は、第７実施形態にかかる積層型素子７００の断面図である。図１２（Ｂ）は、積層型素子７００の等価回路図である。FIG. 12A is a cross-sectional view of a stacked element 700 according to the seventh embodiment. FIG. 12B is an equivalent circuit diagram of the stacked element 700. 図１３は、第８実施形態にかかる積層型素子８００の断面図である。FIG. 13 is a cross-sectional view of a stacked element 800 according to the eighth embodiment. 図１４は、第９実施形態にかかる積層型素子９００の断面図である。FIG. 14 is a cross-sectional view of a stacked element 900 according to the ninth embodiment. 図１５は、第１０実施形態にかかる積層型素子１０００の断面図である。FIG. 15 is a cross-sectional view of a stacked element 1000 according to the tenth embodiment. 図１６（Ａ）は、特許文献１に開示されたＬＣフィルタ１１００の分解斜視図である。図１６（Ｂ）は、ＬＣフィルタ１１００の等価回路図である。FIG. 16A is an exploded perspective view of the LC filter 1100 disclosed in Patent Document 1. As shown in FIG. FIG. 16B is an equivalent circuit diagram of the LC filter 1100.
　以下、図面とともに、本発明を実施するための形態について説明する。 Hereinafter, an embodiment for carrying out the present invention will be described with reference to the drawings.
　なお、各実施形態は、本発明の実施の形態を例示的に示したものであり、本発明が実施形態の内容に限定されることはない。また、異なる実施形態に記載された内容を組合せて実施することも可能であり、その場合の実施内容も本発明に含まれる。 Note that each embodiment exemplarily shows an embodiment of the present invention, and the present invention is not limited to the contents of the embodiment. In addition, it is also possible to combine and implement the contents described in different embodiments, and the contents in that case are also included in the present invention.
　［第１実施形態；積層型素子１００・ＬＣフィルタ１５０］
　（積層型素子１００）
　図１（Ａ）、（Ｂ）、図２、図３（Ａ）、（Ｂ）に、第１実施形態にかかる積層型素子１００を示す。ただし、図１（Ａ）は、天面側から見た積層型素子１００の斜視図である。図１（Ｂ）は、実装面側から見た積層型素子１００の斜視図である。図２は、積層型素子１００の分解斜視図である。図３（Ａ）は、積層型素子１００の断面図であり、図１（Ａ）の一点鎖線Ｘ－Ｘ部分を示している。図３（Ｂ）は、積層型素子１００の等価回路図である。 First Embodiment: Stacked Element 100 LC Filter 150
(Laminated element 100)
FIGS. 1A, 1B, 2, 3A, and 3B show a stacked element 100 according to the first embodiment. However, FIG. 1 (A) is a perspective view of the stacked element 100 as viewed from the top surface side. FIG. 1B is a perspective view of the laminated element 100 as viewed from the mounting surface side. FIG. 2 is an exploded perspective view of the stacked element 100. FIG. 3A is a cross-sectional view of the stacked element 100, and shows a dashed dotted line XX portion in FIG. 1A. FIG. 3B is an equivalent circuit diagram of the stacked element 100.
　積層型素子１００は、基材層１ａ～１ｆが積層された積層体２を備えている。本実施形態においては、全ての基材層１ａ～１ｆが、磁性体セラミックによって作製されている。基材層１ａ～１ｆは、焼成されて一体化されており、層と層との界面が不明確になっている場合がある。 The stacked element 100 includes a stacked body 2 in which base material layers 1a to 1f are stacked. In the present embodiment, all the base layers 1a to 1f are made of magnetic ceramic. The base layers 1a to 1f may be fired and integrated, and the interface between the layers may be unclear.
　積層体２は、実装面Ｂと、天面Ｕと、実装面Ｂと天面Ｕとを繋ぐ４つの側面Ｓとからなる外表面を有している。 The laminate 2 has an outer surface formed of a mounting surface B, a top surface U, and four side surfaces S connecting the mounting surface B and the top surface U.
　図１（Ｂ）に示すように、積層体２の実装面Ｂに、１対の外部端子３ａ、３ｂが形成されている。本実施形態においては、外部端子３ａ、３ｂを、Ａｇによって形成した。ただし、外部端子３ａ、３ｂの材質は任意であり、他の種類の金属を使用してもよい。また、外部端子３ａ、３ｂの表面に、めっき層を形成してもよい。 As shown in FIG. 1B, a pair of external terminals 3a and 3b is formed on the mounting surface B of the laminate 2. In the present embodiment, the external terminals 3a and 3b are formed of Ag. However, the material of the external terminals 3a and 3b is arbitrary, and other types of metals may be used. Moreover, you may form a plating layer in the surface of external terminal 3a, 3b.
　図１（Ａ）に示すように、積層体２の天面Ｕに、キャパシタ電極４が形成されている。本実施形態においては、キャパシタ電極４を、Ａｇによって形成した。ただし、キャパシタ電極４の材質は任意であり、他の種類の金属を使用してもよい。また、キャパシタ電極４の表面に、めっき層を形成してもよい。 As shown in FIG. 1A, the capacitor electrode 4 is formed on the top surface U of the laminate 2. In the present embodiment, the capacitor electrode 4 is formed of Ag. However, the material of the capacitor electrode 4 is arbitrary, and other types of metals may be used. Also, a plating layer may be formed on the surface of the capacitor electrode 4.
　次に、図２、図３（Ａ）を参照して、基材層１ａ～１ｆの詳細について説明する。 Next, the details of the base layers 1a to 1f will be described with reference to FIG. 2 and FIG. 3 (A).
　基材層１ａの下側主面に、上述した、外部端子３ａ、３ｂが形成されている。また、基材層１ａの両主面間を貫通して、ビア電極５ａ、５ｆが形成されている。さらに、基材層１ａの上側主面に、インダクタ電極６ａ、６ｅが形成されている。そして、ビア電極５ａが外部端子３ａとインダクタ電極６ａの一端とを接続し、ビア電極５ｆが外部端子３ｂとインダクタ電極６ｅの一端とを接続している。 The external terminals 3a and 3b described above are formed on the lower main surface of the base layer 1a. Further, via electrodes 5a and 5f are formed to penetrate between both main surfaces of the base material layer 1a. Furthermore, inductor electrodes 6a and 6e are formed on the upper main surface of the base layer 1a. The via electrode 5a connects the external terminal 3a to one end of the inductor electrode 6a, and the via electrode 5f connects the external terminal 3b to one end of the inductor electrode 6e.
　基材層１ｂの両主面間を貫通して、ビア電極５ｂ、５ｇが形成されている。ビア電極５ｂはインダクタ電極６ａの他端に接続され、ビア電極５ｇはインダクタ電極６ｅの他端に接続されている。また、基材層１ｂの上側主面に、インダクタ電極６ｂ、６ｆが形成されている。インダクタ電極６ｂの一端がビア電極５ｂに接続され、インダクタ電極６ｆの一端がビア電極５ｇに接続されている。 Via electrodes 5b and 5g are formed to penetrate between both main surfaces of base material layer 1b. The via electrode 5b is connected to the other end of the inductor electrode 6a, and the via electrode 5g is connected to the other end of the inductor electrode 6e. Further, inductor electrodes 6b and 6f are formed on the upper main surface of the base layer 1b. One end of the inductor electrode 6b is connected to the via electrode 5b, and one end of the inductor electrode 6f is connected to the via electrode 5g.
　基材層１ｃの両主面間を貫通して、ビア電極５ｃ、５ｈが形成されている。ビア電極５ｃはインダクタ電極６ｂの他端に接続され、ビア電極５ｈはインダクタ電極６ｆの他端に接続されている。また、基材層１ｃの上側主面に、インダクタ電極６ｃ、６ｇが形成されている。インダクタ電極６ｃの一端がビア電極５ｃに接続され、インダクタ電極６ｇの一端がビア電極５ｈに接続されている。 Via electrodes 5c and 5h are formed to penetrate between both main surfaces of base material layer 1c. The via electrode 5c is connected to the other end of the inductor electrode 6b, and the via electrode 5h is connected to the other end of the inductor electrode 6f. Furthermore, inductor electrodes 6c and 6g are formed on the upper main surface of the base layer 1c. One end of the inductor electrode 6c is connected to the via electrode 5c, and one end of the inductor electrode 6g is connected to the via electrode 5h.
　基材層１ｄの両主面間を貫通して、ビア電極５ｄ、５ｉが形成されている。ビア電極５ｄはインダクタ電極６ｃの他端に接続され、ビア電極５ｉはインダクタ電極６ｇの他端に接続されている。また、基材層１ｄの上側主面に、インダクタ電極６ｄ、６ｈが形成されている。インダクタ電極６ｄの一端がビア電極５ｄに接続され、インダクタ電極６ｈの一端がビア電極５ｉに接続されている。 Via electrodes 5d and 5i are formed to penetrate between both main surfaces of the base material layer 1d. The via electrode 5d is connected to the other end of the inductor electrode 6c, and the via electrode 5i is connected to the other end of the inductor electrode 6g. Further, inductor electrodes 6d and 6h are formed on the upper main surface of the base layer 1d. One end of the inductor electrode 6d is connected to the via electrode 5d, and one end of the inductor electrode 6h is connected to the via electrode 5i.
　基材層１ｅ、１ｆのそれぞれの両主面間を貫通して、ビア電極５ｅ、５ｊが形成されている。ビア電極５ｅはインダクタ電極６ｄの他端に接続され、ビア電極５ｊはインダクタ電極６ｈの他端に接続されている。また、基材層１ｆの上側主面に、上述した、キャパシタ電極４が形成されている。キャパシタ電極４に、ビア電極５ｅ、５ｊがそれぞれ接続されている。 Via electrodes 5e and 5j are formed to penetrate between the respective main surfaces of each of the base material layers 1e and 1f. The via electrode 5e is connected to the other end of the inductor electrode 6d, and the via electrode 5j is connected to the other end of the inductor electrode 6h. In addition, the capacitor electrode 4 described above is formed on the upper main surface of the base material layer 1 f. Via electrodes 5 e and 5 j are connected to the capacitor electrode 4 respectively.
　本実施形態においては、ビア電極５ａ～５ｊ、インダクタ電極６ａ～６ｈを、Ａｇによって形成した。ただし、ビア電極５ａ～５ｊ、インダクタ電極６ａ～６ｈの材質は任意であり、他の種類の金属を使用してもよい。 In the present embodiment, the via electrodes 5a to 5j and the inductor electrodes 6a to 6h are formed of Ag. However, the materials of the via electrodes 5a to 5j and the inductor electrodes 6a to 6h are arbitrary, and other types of metals may be used.
　基材層１ａ～１ｆが積層され、一体化されて積層体２を形成することにより、積層体２の内部に、２つのインダクタＬ１、Ｌ２が構成される。 The base layers 1a to 1f are stacked and integrated to form the stacked body 2, whereby two inductors L1 and L2 are formed in the stacked body 2.
　インダクタＬ１は、外部端子３ａを起点にし、キャパシタ電極４を終点にして、ビア電極５ａ、インダクタ電極６ａ、ビア電極５ｂ、インダクタ電極６ｂ、ビア電極５ｃ、インダクタ電極６ｃ、ビア電極５ｄ、インダクタ電極６ｄ、ビア電極５ｅを順に繋ぐ導電経路によって構成されている。 Inductor L1 starts from external terminal 3a and ends at capacitor electrode 4. Via electrode 5a, inductor electrode 6a, via electrode 5b, inductor electrode 6b, via electrode 5c, inductor electrode 6c, via electrode 5d, inductor electrode 6d , And a conductive path connecting the via electrodes 5e in order.
　インダクタＬ２は、外部端子３ｂを起点にし、キャパシタ電極４を終点にして、ビア電極５ｆ、インダクタ電極６ｅ、ビア電極５ｇ、インダクタ電極６ｆ、ビア電極５ｈ、インダクタ電極６ｇ、ビア電極５ｉ、インダクタ電極６ｈ、ビア電極５ｊを順に繋ぐ導電経路によって構成されている。 Inductor L2 starts from external terminal 3b and ends at capacitor electrode 4. Via electrode 5f, inductor electrode 6e, via electrode 5g, inductor electrode 6f, via electrode 5h, inductor electrode 6g, via electrode 5i, inductor electrode 6h , And a conductive path connecting the via electrodes 5j in order.
　以上の構成において、インダクタＬ１およびインダクタＬ２とキャパシタ電極４がそれぞれビア電極５ｅ、ビア電極５ｊで接続されるため、インダクタＬ１とインダクタＬ２の間に寄生インダクタを生じず、また、インダクタＬ１およびインダクタＬ２を流れる電流が面積の広いキャパシタ電極４を流れるため、内部配線の抵抗値を下げることができる。 In the above configuration, since inductor L1 and inductor L2 and capacitor electrode 4 are respectively connected by via electrode 5e and via electrode 5j, no parasitic inductor is generated between inductor L1 and inductor L2, and inductor L1 and inductor L2 are also formed. Since the current flowing in the current flows through the capacitor electrode 4 having a large area, the resistance value of the internal wiring can be reduced.
　以上の結果、積層型素子１００は、図３（Ｂ）に示す等価回路を有している。すなわち、外部端子３ａとキャパシタ電極４との間にインダクタＬ１が接続され、外部端子３ｂとキャパシタ電極４との間にインダクタＬ２が接続されている。 As a result of the above, the stacked element 100 has the equivalent circuit shown in FIG. That is, the inductor L 1 is connected between the external terminal 3 a and the capacitor electrode 4, and the inductor L 2 is connected between the external terminal 3 b and the capacitor electrode 4.
　積層型素子１００は、キャパシタ電極４が積層体２の外表面（天面Ｕ）に形成されているため、積層体２の内部には、インダクタＬ１、Ｌ２のみが形成されている。したがって、積層型素子１００は、積層体２の内部の電極の配置が容易である。また、積層体２が、小型化されている。 In the multilayer element 100, since the capacitor electrode 4 is formed on the outer surface (upper surface U) of the multilayer body 2, only the inductors L1 and L2 are formed inside the multilayer body 2. Therefore, in the laminated element 100, the arrangement of the electrodes inside the laminated body 2 is easy. Moreover, the laminated body 2 is miniaturized.
　また、積層型素子１００は、基材層１ａ～１ｆが、磁性体セラミックによって作製されているため、インダクタＬ１、Ｌ２は、それぞれ、インダクタンス値が大きい。ただし、インダクタＬ１、Ｌ２のインダクタンス値はそれぞれ任意であり、基材層の層数を増減してインダクタ電極の数を増減するなどの方法によって、増減させることができる。 Further, since the base layers 1a to 1f of the stacked element 100 are made of magnetic ceramic, the inductors L1 and L2 have large inductance values. However, the inductance value of each of the inductors L1 and L2 is arbitrary, and can be increased or decreased by increasing or decreasing the number of inductor electrodes by increasing or decreasing the number of base material layers.
　（積層型素子１００の製造方法の一例）
　積層型素子１００は、たとえば、次の方法で製造することができる。 (An example of a method of manufacturing the stacked element 100)
The stacked element 100 can be manufactured, for example, by the following method.
　まず、基材層１ａ～１ｆを作製するための、セラミックグリーンシートを用意する。セラミックグリーンシートは、たとえば、磁性体フェライトを主成分にして形成されている。 First, ceramic green sheets for preparing the base layers 1a to 1f are prepared. The ceramic green sheet is formed, for example, mainly of magnetic ferrite.
　次に、所定のセラミックグリーンシートに、ビア電極５ａ～５ｊを形成するための孔を、たとえば、レーザー光を照射するなどの方法によって形成する。 Next, holes for forming the via electrodes 5a to 5j are formed in predetermined ceramic green sheets, for example, by a method such as laser light irradiation.
　次に、ビア電極５ａ～５ｊを形成するための孔に、導電ペーストを充填する。続いて、セラミックグリーンシートの主面に、たとえば、導電ペーストをスクリーン印刷するなどの方法によって、外部端子３ａ、３ｂ、キャパシタ電極４、インダクタ電極６ａ～６ｈを形成するための導電ペーストパターンを形成する。 Next, holes for forming the via electrodes 5a to 5j are filled with a conductive paste. Subsequently, conductive paste patterns for forming external terminals 3a and 3b, capacitor electrodes 4 and inductor electrodes 6a to 6h are formed on the main surface of the ceramic green sheet by screen printing of a conductive paste, for example. .
　次に、セラミックグリーンシートを所定の順番に積層し、たとえば、加圧および加熱することによって一体化させ、未焼成の積層体を作製する。 Next, the ceramic green sheets are laminated in a predetermined order, and integrated by pressing and heating, for example, to prepare an unfired laminate.
　次に、未焼成の積層体を、所定のプロファイルで焼成して積層体２を作製する。積層体２の内部には、インダクタＬ１、Ｌ２が形成されている。積層体２の外表面には、外部端子３ａ、３ｂ、キャパシタ電極４が形成されている。 Next, the unfired laminate is fired with a predetermined profile to produce a laminate 2. The inductors L1 and L2 are formed in the laminate 2. External terminals 3 a and 3 b and a capacitor electrode 4 are formed on the outer surface of the laminate 2.
　最後に、必要に応じて、３ａ、３ｂ、キャパシタ電極４の表面にめっき層を形成して、積層型素子１００を完成させる。 Finally, as needed, a plating layer is formed on the surface of the capacitor electrode 4 3a, 3b to complete the stacked element 100.
　なお、上記においては、１つの積層型素子１００を製造する場合について説明したが、各セラミックグリーンシートがマトリックス状に配置されたマザーセラミックグリーンシートを用意し、多数の積層型素子１００を一括して製造し、途中で、各積層型素子１００に分割するようにしてもよい。 In the above, the case of manufacturing one stacked element 100 has been described, but a mother ceramic green sheet in which each ceramic green sheet is arranged in a matrix is prepared, and a large number of stacked elements 100 are collectively obtained. It may be manufactured and divided into each stacked element 100 on the way.
　（ＬＣフィルタ１５０）
　次に、第１実施形態にかかるＬＣフィルタ１５０について説明する。なお、ＬＣフィルタ１５０は、上述した第１実施形態にかかる積層型素子１００を使用して作製されている。 (LC filter 150)
Next, the LC filter 150 according to the first embodiment will be described. The LC filter 150 is manufactured using the stacked element 100 according to the first embodiment described above.
　図４（Ａ）、（Ｂ）に、ＬＣフィルタ１５０を示す。ただし、図４（Ａ）は、ＬＣフィルタ１５０の断面図である。図４（Ｂ）は、ＬＣフィルタ１５０の等価回路図である。 The LC filter 150 is shown to FIG. 4 (A) and (B). However, FIG. 4A is a cross-sectional view of the LC filter 150. FIG. 4B is an equivalent circuit diagram of the LC filter 150. As shown in FIG.
　ＬＣフィルタ１５０は、基板７を備えている。本実施形態においては、基板７に、複数のセラミック層７ａ、７ｂが積層された多層基板を使用した。ただし、基板７の材質は任意であり、セラミックに代えて、たとえば、樹脂を使用してもよい。また、基板７は、多層基板ではなく、単層基板であってもよい。 The LC filter 150 includes a substrate 7. In the present embodiment, a multilayer substrate in which a plurality of ceramic layers 7 a and 7 b are stacked is used as the substrate 7. However, the material of the substrate 7 is arbitrary, and for example, a resin may be used instead of the ceramic. Also, the substrate 7 may be a single layer substrate instead of a multilayer substrate.
　基板７の下側主面に、３つの外部端子８ａ、８ｂ、８ｃが形成されている。外部端子８ａ、８ｂは、それぞれ、信号ラインに接続される入出力端子である。外部端子８ｃは、グランドに接続されるグランド端子である。 Three external terminals 8 a, 8 b, 8 c are formed on the lower main surface of the substrate 7. The external terminals 8a and 8b are input / output terminals connected to the signal line, respectively. The external terminal 8c is a ground terminal connected to the ground.
　基板７の上側主面に、ランド電極９ａ、９ｂが形成されている。また、基板７の上側主面に、後述する金属シールド１４に接続される接続電極１０が形成されている。 Land electrodes 9 a and 9 b are formed on the upper main surface of the substrate 7. Further, on the upper main surface of the substrate 7, a connection electrode 10 connected to a metal shield 14 described later is formed.
　基板７の内部には、セラミック層７ａ、７ｂのそれぞれの両主面間を貫通して形成されたビア電極と、セラミック層７ａ、７ｂの層間に形成された層間電極とで、配線電極１１が形成されている。そして、配線電極１１によって、外部端子８ａとランド電極９ａとが接続されている。配線電極１１によって、外部端子８ｂとランド電極９ｂとが接続されている。配線電極１１によって、外部端子８ｃと接続電極１０とが接続されている。 The wiring electrode 11 is formed inside the substrate 7 by a via electrode formed through both main surfaces of the ceramic layers 7a and 7b and an interlayer electrode formed between the ceramic layers 7a and 7b. It is formed. The external terminal 8 a and the land electrode 9 a are connected by the wiring electrode 11. The external terminal 8 b and the land electrode 9 b are connected by the wiring electrode 11. The external terminal 8 c and the connection electrode 10 are connected by the wiring electrode 11.
　外部端子８ａ、８ｂ、８ｃ、ランド電極９ａ、９ｂ、接続電極１０、配線電極（ビア電極、層間電極）１１の材質は、それぞれ任意であるが、たとえば、ＣｕやＮｉなどを使用することができる。また、外部端子８ａ、８ｂ、８ｃ、ランド電極９ａ、９ｂ、接続電極１０の表面には、めっき層を形成してもよい。めっき層の材質および構造は任意であるが、たとえば、第１層がＮｉめっき層、第２層がＳｎめっき層の２層構造に形成することができる。 The materials of the external terminals 8a, 8b and 8c, the land electrodes 9a and 9b, the connection electrode 10, and the wiring electrodes (via electrodes, interlayer electrodes) 11 are arbitrary, but Cu, Ni, etc. can be used, for example. . Further, a plating layer may be formed on the surfaces of the external terminals 8a, 8b, 8c, the land electrodes 9a, 9b, and the connection electrode 10. Although the material and structure of a plating layer are arbitrary, for example, a 1st layer can form Ni plating layer and a 2nd layer can be formed in 2 layer structure of Sn plating layer.
　基板７の上側主面に、はんだ１２によって、積層型素子１００が実装されている。より具体的には、ランド電極９ａに、積層型素子１００の外部端子３ａが、はんだ１２によって接合されている。また、ランド電極９ｂに、積層型素子１００の外部端子３ｂが、はんだ１２によって接合されている。なお、はんだ１２に代えて、たとえば導電性接着剤によって、積層型素子１００を実装してもよい。 The stacked element 100 is mounted on the upper major surface of the substrate 7 by the solder 12. More specifically, the external terminal 3 a of the stacked element 100 is joined to the land electrode 9 a by the solder 12. Further, the external terminal 3 b of the stacked element 100 is joined to the land electrode 9 b by the solder 12. Note that, instead of the solder 12, the laminated element 100 may be mounted by, for example, a conductive adhesive.
　積層型素子１００を実装した基板７の上側主面に、積層型素子１００を覆うように、封止樹脂１３が形成されている。本実施形態においては、封止樹脂１３に、熱硬化性および光硬化性の少なくとも一方を備えた、誘電率３．５～５．０程度のエポキシ樹脂を使用した。ただし、封止樹脂１３の材質は絶縁性を有していればよいため、任意で選択可能あり、たとえば、シリコーン樹脂を使用してもよい。また、封止樹脂１３の誘電率も任意である。 A sealing resin 13 is formed on the upper major surface of the substrate 7 on which the stacked element 100 is mounted so as to cover the stacked element 100. In the present embodiment, an epoxy resin having a dielectric constant of about 3.5 to 5.0 and having at least one of a thermosetting property and a photocurable property is used as the sealing resin 13. However, since the material of the sealing resin 13 only needs to have an insulating property, it can be arbitrarily selected. For example, a silicone resin may be used. Further, the dielectric constant of the sealing resin 13 is also arbitrary.
　封止樹脂１３の外表面を覆うように、金属シールド１４が形成されている。なお、本実施形態においては、金属シールド１４は、基板７の端面の一部も覆っている。 A metal shield 14 is formed to cover the outer surface of the sealing resin 13. In the present embodiment, the metal shield 14 also covers a part of the end face of the substrate 7.
　本実施形態においては、金属シールド１４を、図示は省略するが、密着層と、導電層と、保護層との３層に形成し、３層合計の厚みを１００μｍとした。ただし、封止樹脂１３との密着性が良好である場合は、密着層を省略してもよい。密着層および保護層の材料には、たとえば、ＳＵＳ、Ｔｉ、Ｃｒ、Ｎｉなどを使用することができる。導電層の材料には、たとえば、Ｃｕ、Ａｇ、Ａｌなどを使用することができる。 In the present embodiment, although not shown, the metal shield 14 is formed in three layers of an adhesive layer, a conductive layer, and a protective layer, and the total thickness of the three layers is 100 μm. However, when the adhesion to the sealing resin 13 is good, the adhesion layer may be omitted. For example, SUS, Ti, Cr, Ni or the like can be used as the material of the adhesion layer and the protective layer. As a material of the conductive layer, for example, Cu, Ag, Al or the like can be used.
　金属シールド１４は、基板７の上側主面に形成された接続電極１０に接続されている。なお、上述したとおり、接続電極１０は、基板７の下側主面に形成されたグランド端子である外部端子８ｃに、配線電極１１によって接続されているため、金属シールド１４はグランドに接地される。 The metal shield 14 is connected to the connection electrode 10 formed on the upper main surface of the substrate 7. As described above, since the connection electrode 10 is connected to the external terminal 8c which is the ground terminal formed on the lower main surface of the substrate 7 by the wiring electrode 11, the metal shield 14 is grounded to the ground. .
　本実施形態においては、積層型素子１００の天面Ｕに形成されたキャパシタ電極４と、金属シールド１４との距離、すなわち、キャパシタ電極４と金属シールド１４の間に設けられた封止樹脂１３の厚みを、５０μｍにした。 In the present embodiment, the distance between the capacitor electrode 4 formed on the top surface U of the stacked element 100 and the metal shield 14, that is, the sealing resin 13 provided between the capacitor electrode 4 and the metal shield 14. The thickness was 50 μm.
　ＬＣフィルタ１５０においては、積層型素子１００の天面Ｕに形成されたキャパシタ電極４と、金属シールド１４との間に発生する容量により、キャパシタＣ１が構成されている。この結果、ＬＣフィルタ１５０は、図４（Ｂ）に示す等価回路を有している。 In the LC filter 150, a capacitor C1 is configured by the capacitance generated between the capacitor electrode 4 formed on the top surface U of the stacked element 100 and the metal shield 14. As a result, the LC filter 150 has the equivalent circuit shown in FIG. 4 (B).
　ＬＣフィルタ１５０は、Ｔ型のローパスフィルタを構成している。図５（Ａ）に、ＬＣフィルタ１５０の周波数特性を、模式的に示す。 The LC filter 150 constitutes a T-type low pass filter. FIG. 5A schematically shows frequency characteristics of the LC filter 150. As shown in FIG.
　ＬＣフィルタ１５０の周波数特性は、キャパシタ電極４と金属シールド１４との間の封止樹脂１３の厚みを増減することにより、調整することができる。すなわち、図５（Ｂ）に示すように、封止樹脂１３の厚みを小さくし、キャパシタＣ１のキャパシタンス値を大きくすることにより、共振周波数を低周波側に移動させることができる。逆に、封止樹脂１３の厚みを大きくし、キャパシタＣ１のキャパシタンス値を小さくすることにより、共振周波数を高周波側に移動させることができる。 The frequency characteristics of the LC filter 150 can be adjusted by increasing or decreasing the thickness of the sealing resin 13 between the capacitor electrode 4 and the metal shield 14. That is, as shown in FIG. 5B, the resonance frequency can be moved to the low frequency side by reducing the thickness of the sealing resin 13 and increasing the capacitance value of the capacitor C1. Conversely, by increasing the thickness of the sealing resin 13 and reducing the capacitance value of the capacitor C1, the resonance frequency can be moved to the high frequency side.
　（ＬＣフィルタ１５０の製造方法の一例）
　ＬＣフィルタ１５０は、たとえば、次の方法で製造することができる。 (One example of a method of manufacturing the LC filter 150)
The LC filter 150 can be manufactured, for example, by the following method.
　まず、基板７を用意する。基板７には、予め、外部端子８ａ、８ｂ、８ｃ、ランド電極９ａ、９ｂ、接続電極１０、配線電極１１が形成されている。 First, the substrate 7 is prepared. On the substrate 7, external terminals 8a, 8b, 8c, land electrodes 9a, 9b, connection electrodes 10, and wiring electrodes 11 are formed in advance.
　次に、基板７のランド電極９ａ、９ｂに、積層型素子１００を実装する。具体的には、まず、ランド電極９ａ、９ｂにクリームはんだを印刷する。次に、ランド電極９ａ、９ｂに印刷されたクリームはんだ上に、積層型素子１００の外部端子３ａ、３ｂを載置する。次に、加熱してクリームはんだを溶融させ、続いて冷却してクリームはんだを固化させて、はんだ１２を形成し、はんだ１２によってランド電極９ａ、９ｂに外部端子３ａ、３ｂを接合する。 Next, the stacked element 100 is mounted on the land electrodes 9 a and 9 b of the substrate 7. Specifically, first, cream solder is printed on the land electrodes 9a and 9b. Next, the external terminals 3a and 3b of the stacked element 100 are placed on the cream solder printed on the land electrodes 9a and 9b. Next, the cream solder is heated to melt and then cooled to solidify the cream solder to form the solder 12, and the land terminals 9a and 9b are joined to the external terminals 3a and 3b by the solder 12.
　次に、積層型素子１００が実装された基板７の上側主面に、封止樹脂１３を形成する。具体的には、まず、積層型素子１００が実装された基板７の上側主面に、未硬化の樹脂を充填する。次に、加熱、および、光の照射の少なくとも一方を施し、樹脂を硬化させて封止樹脂１３を形成する。 Next, the sealing resin 13 is formed on the upper main surface of the substrate 7 on which the stacked element 100 is mounted. Specifically, first, the upper major surface of the substrate 7 on which the stacked element 100 is mounted is filled with an uncured resin. Next, at least one of heating and light irradiation is applied, and the resin is cured to form the sealing resin 13.
　最後に、封止樹脂１３の外表面、および、基板７の端面の一部を覆うように、たとえばスパッタリングによって金属シールド１４を形成し、ＬＣフィルタ１５０を完成させる。 Finally, the metal shield 14 is formed by sputtering, for example, so as to cover the outer surface of the sealing resin 13 and a part of the end face of the substrate 7, thereby completing the LC filter 150.
　なお、上記においては、１つのＬＣフィルタ１５０を製造する場合について説明したが、各基板７がマトリックス状に配置されたマザー基板を用意し、多数のＬＣフィルタ１５０を一括して製造し、マザー基板上に封止樹脂１３を形成した後に、各ＬＣフィルタ１５０に分割するようにしてもよい。 Although the case of manufacturing one LC filter 150 has been described above, a mother substrate in which each substrate 7 is arranged in a matrix is prepared, and a large number of LC filters 150 are manufactured collectively. After forming the sealing resin 13 on top, the LC filter 150 may be divided.
　［第２実施形態；ＬＣフィルタ２５０］
　図６に、第２実施形態にかかるＬＣフィルタ２５０を示す。ただし、図６は、ＬＣフィルタ２５０の断面図である。 Second Embodiment LC Filter 250
FIG. 6 shows an LC filter 250 according to the second embodiment. However, FIG. 6 is a cross-sectional view of the LC filter 250.
　ＬＣフィルタ２５０も、第１実施形態にかかるＬＣフィルタ１５０と同様に、第１実施形態にかかる積層型素子１００を使用している。しかしながら、ＬＣフィルタ２５０は、ＬＣフィルタ１５０が備えていた、封止樹脂１３と、封止樹脂１３の外表面に形成されていた金属シールド１４とを省略し、代わりに、１枚の金属板を加工して作製した金属構造体２４を金属シールドとして使用している。以下、ＬＣフィルタ１５０との相違点を中心にして、簡単に説明する。 Similarly to the LC filter 150 according to the first embodiment, the LC filter 250 also uses the stacked element 100 according to the first embodiment. However, the LC filter 250 omits the sealing resin 13 and the metal shield 14 formed on the outer surface of the sealing resin 13 included in the LC filter 150, and instead, uses one metal plate. The metal structure 24 processed and produced is used as a metal shield. The following briefly describes differences from the LC filter 150.
　ＬＣフィルタ２５０は、基板２７を備えている。第１実施形態にかかるＬＣフィルタ１５０の基板７は、上側主面に、部分的に接続電極１０が形成されていた。ＬＣフィルタ２５０の基板２７は、これに代えて、上側主面の外縁部の近傍に、環状に接続電極２０が形成されている。接続電極２０は、配線電極１１を経由して、グランド端子である外部端子８ｃに接続されている。 The LC filter 250 includes a substrate 27. In the substrate 7 of the LC filter 150 according to the first embodiment, the connection electrode 10 is partially formed on the upper main surface. Instead of the substrate 27 of the LC filter 250, the connection electrode 20 is annularly formed in the vicinity of the outer edge of the upper main surface. The connection electrode 20 is connected to the external terminal 8 c which is a ground terminal via the wiring electrode 11.
　基板２７の上側主面に、積層型素子１００が実装されている。 The stacked element 100 is mounted on the upper main surface of the substrate 27.
　ＬＣフィルタ２５０は、上述したように、金属シールドとして、１枚の金属板を加工して作製した金属構造体２４を備えている。金属構造体２４は、はんだ２２によって、基板２７の上側主面に形成された接続電極２０に接合されている。 As described above, the LC filter 250 includes the metal structure 24 manufactured by processing one metal plate as a metal shield. The metal structure 24 is joined by a solder 22 to a connection electrode 20 formed on the upper major surface of the substrate 27.
　ＬＣフィルタ２５０は、積層型素子１００の天面に形成されたキャパシタ電極４と、金属構造体２４との間が、空間（空気）になっている。本実施形態においては、キャパシタ電極４と金属構造体２４との間の距離を、第１実施形態にかかるＬＣフィルタ１５０のキャパシタ電極４と金属シールド１４との間の封止樹脂１３の厚みと同じ、５０μｍにした。 In the LC filter 250, a space (air) is formed between the capacitor electrode 4 formed on the top surface of the stacked element 100 and the metal structure 24. In the present embodiment, the distance between the capacitor electrode 4 and the metal structure 24 is the same as the thickness of the sealing resin 13 between the capacitor electrode 4 and the metal shield 14 of the LC filter 150 according to the first embodiment. , 50 μm.
　ＬＣフィルタ２５０は、キャパシタ電極４と金属構造体２４との間に発生する容量によりキャパシタＣ１が構成されている。ＬＣフィルタ２５０の等価回路は、図４（Ｂ）に示したＬＣフィルタ１５０の等価回路と同じである。ただし、ＬＣフィルタ２５０は、キャパシタ電極４と金属構造体２４との間に存在する空気（誘電率＝１）をキャパシタＣ１の誘電体として使用しているため、キャパシタ電極４と金属シールド１４との間の封止樹脂１３（誘電率＝３．５～５．０）をキャパシタＣ１の誘電体として使用したＬＣフィルタ１５０に比べて、キャパシタＣ１のキャパシタンス値が小さくなっている。 In the LC filter 250, a capacitor C1 is configured by a capacitance generated between the capacitor electrode 4 and the metal structure 24. The equivalent circuit of the LC filter 250 is the same as the equivalent circuit of the LC filter 150 shown in FIG. 4 (B). However, since the LC filter 250 uses air (dielectric constant = 1) existing between the capacitor electrode 4 and the metal structure 24 as the dielectric of the capacitor C 1, The capacitance value of the capacitor C1 is smaller than that of the LC filter 150 in which the sealing resin 13 (dielectric constant = 3.5 to 5.0) is used as the dielectric of the capacitor C1.
　［第３実施形態；積層型素子３００］
　図７、図８（Ａ）、（Ｂ）に、第３実施形態にかかる積層型素子３００を示す。ただし、図７は、積層型素子３００の分解斜視図である。図８（Ａ）は、積層型素子３００の断面図である。図８（Ｂ）は、積層型素子３００の等価回路図である。 Third Embodiment; Stacked Device 300
FIGS. 7, 8A and 8B show a stacked element 300 according to the third embodiment. However, FIG. 7 is an exploded perspective view of the stacked element 300. FIG. 8A is a cross-sectional view of the stacked element 300. FIG. 8B is an equivalent circuit diagram of the stacked element 300.
　積層型素子３００は、第１実施形態にかかる積層型素子１００の構成の一部に変更を加えた。具体的には、積層型素子１００では、図２、図３（Ａ）に示すように、ビア電極５ａ、インダクタ電極６ａ、ビア電極５ｂ、インダクタ電極６ｂ、ビア電極５ｃ、インダクタ電極６ｃ、ビア電極５ｄ、インダクタ電極６ｄ、ビア電極５ｅで構成されるインダクタＬ１と、ビア電極５ｆ、インダクタ電極６ｅ、ビア電極５ｇ、インダクタ電極６ｆ、ビア電極５ｈ、インダクタ電極６ｇ、ビア電極５ｉ、インダクタ電極６ｈ、ビア電極５ｊで構成されるインダクタＬ２とを、別々にキャパシタ電極４に接続していた。これに対し、積層型素子３００は、図７、図８（Ａ）に示すように、基材層１ｄの上側主面にそれぞれ形成された、インダクタＬ１のインダクタ電極６ｄと、インダクタＬ２のインダクタ電極６ｈとを、接続点Ｙで相互に接続したうえで、基材層１ｅ、１ｆを貫通して形成されたビア電極３５ｋを経由させて、キャパシタ電極４に接続した。 In the laminated element 300, a part of the configuration of the laminated element 100 according to the first embodiment is modified. Specifically, in the laminated element 100, as shown in FIG. 2 and FIG. 3A, the via electrode 5a, the inductor electrode 6a, the via electrode 5b, the inductor electrode 6b, the via electrode 5c, the inductor electrode 6c, the via electrode 5d, inductor L1 composed of inductor electrode 6d, via electrode 5e, via electrode 5f, inductor electrode 6e, via electrode 5g, inductor electrode 6f, via electrode 5h, inductor electrode 6g, via electrode 5i, inductor electrode 6h, via The inductor L2 configured of the electrode 5j is separately connected to the capacitor electrode 4. On the other hand, as shown in FIGS. 7 and 8A, the multilayer element 300 includes the inductor electrode 6d of the inductor L1 and the inductor electrode of the inductor L2 respectively formed on the upper main surface of the base layer 1d. 6 h and 6 h were connected to each other at the connection point Y, and then connected to the capacitor electrode 4 via the via electrode 35 k formed through the base material layers 1 e and 1 f.
　積層型素子３００は、図８（Ｂ）に示すように、インダクタＬ１とインダクタＬ２との接続点Ｙと、キャパシタ電極４との間に、ビア電極３５ｋによってインダクタＬ３が構成されている。なお、積層型素子３００のインダクタＬ１、Ｌ２のインダクタンス値は、インダクタ長が短くなった分、積層型素子１００のインダクタＬ１、Ｌ２のインダクタンス値よりも、それぞれ小さくなっている。 In the multilayer element 300, as shown in FIG. 8B, the inductor L3 is configured by the via electrode 35k between the connection point Y of the inductor L1 and the inductor L2 and the capacitor electrode 4. The inductance values of the inductors L1 and L2 of the multilayer element 300 are respectively smaller than the inductance values of the inductors L1 and L2 of the multilayer element 100 as the inductor length is shorter.
　積層型素子３００を使って、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣローパスフィルタを構成した場合、図８（Ｂ）に示すように、インダクタＬ３とキャパシタＣ１とで、ＬＣ直列共振器が構成される。積層型素子３００を使って構成したＬＣローパスフィルタは、このＬＣ直列共振器を設けたことにより、通過域よりも高周波側の減衰が強化されている。 When an LC low-pass filter is configured using the stacked element 300 by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment, FIG. As shown in), the inductor L3 and the capacitor C1 constitute an LC series resonator. In the LC low pass filter configured using the stacked element 300, the attenuation on the high frequency side of the passband is enhanced by providing the LC series resonator.
　［第４実施形態；積層型素子４００］
　図９に、第４実施形態にかかる積層型素子４００を示す。ただし、図９は、積層型素子４００の断面図である。 [Fourth embodiment: stacked element 400]
FIG. 9 shows a stacked element 400 according to the fourth embodiment. However, FIG. 9 is a cross-sectional view of the stacked element 400.
　積層型素子４００は、第１実施形態にかかる積層型素子１００の構成の一部に変更を加えた。具体的には、積層型素子１００では、積層体２の天面Ｕに、キャパシタ電極４が形成されていた。積層型素子４００は、これに代えて、積層体２の側面Ｓに、キャパシタ電極４４を形成した。そして、インダクタＬ１のインダクタ電極６ｄ、および、インダクタＬ２のインダクタ電極６ｈを、それぞれ、ビア電極や、基材層の層間に形成した層間電極を経由させて、キャパシタ電極４４に接続した。 In the laminated element 400, a part of the configuration of the laminated element 100 according to the first embodiment is modified. Specifically, in the stacked element 100, the capacitor electrode 4 is formed on the top surface U of the stacked body 2. In the stacked element 400, instead of this, the capacitor electrode 44 is formed on the side surface S of the stacked body 2. Then, the inductor electrode 6d of the inductor L1 and the inductor electrode 6h of the inductor L2 are connected to the capacitor electrode 44 via the via electrode and the interlayer electrode formed between the base layers, respectively.
　このように、キャパシタ電極４４を、積層体２の側面Ｓに形成してもよい。積層型素子４００を使用して、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを作製することができる。 Thus, the capacitor electrode 44 may be formed on the side surface S of the laminate 2. The LC filter can be manufactured using the stacked element 400 according to the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
　［第５実施形態；積層型素子５００］
　図１０に、第５実施形態にかかる積層型素子５００を示す。ただし、図１０は、積層型素子５００の断面図である。 [Fifth Embodiment; Stacked Device 500]
FIG. 10 shows a stacked element 500 according to the fifth embodiment. However, FIG. 10 is a cross-sectional view of the stacked element 500.
　積層型素子５００は、積層体２の天面Ｕにキャパシタ電極４を形成するとともに、積層体２の側面Ｓにキャパシタ電極４４を形成した。そして、インダクタＬ１のインダクタ電極６ｄ、および、インダクタＬ２のインダクタ電極６ｈを、それぞれ、ビア電極や、基材層の層間に形成した層間電極を経由させて、キャパシタ電極４およびキャパシタ電極４４に接続した。 In the multilayer element 500, the capacitor electrode 4 is formed on the top surface U of the multilayer body 2, and the capacitor electrode 44 is formed on the side surface S of the multilayer body 2. The inductor electrode 6d of the inductor L1 and the inductor electrode 6h of the inductor L2 are connected to the capacitor electrode 4 and the capacitor electrode 44 via the via electrode and the interlayer electrode formed between the layers of the base layer, respectively. .
　このように、積層体２の外表面に、複数のキャパシタ電極４、４４を形成してもよい。積層型素子５００を使用して、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを作製することができる。 As described above, a plurality of capacitor electrodes 4 and 44 may be formed on the outer surface of the laminate 2. An LC filter can be manufactured using the stacked element 500 by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
　［第６実施形態；積層型素子６００］
　図１１（Ａ）、（Ｂ）に、第６実施形態にかかる積層型素子６００を示す。ただし、図１１（Ａ）は、積層型素子６００の断面図である。図１１（Ｂ）は、積層型素子６００の等価回路図である。 Sixth Embodiment; Stacked Device 600
FIGS. 11A and 11B show a stacked element 600 according to the sixth embodiment. However, FIG. 11A is a cross-sectional view of the stacked element 600. FIG. 11B is an equivalent circuit diagram of the stacked element 600.
　積層型素子６００は、積層体２の内部に、ビア電極と、インダクタ電極とを使って、１つのインダクタＬ６１が形成されている。そして、インダクタＬ６１は、一方の端部が外部端子３ａに接続され、他方の端部が外部端子３ｂに接続されている。また、外部端子３ａが、ビア電極を使って、積層体２の天面Ｕに形成されたキャパシタ電極４に接続されている。 In the multilayer element 600, one inductor L61 is formed inside the multilayer body 2 using a via electrode and an inductor electrode. Then, one end of the inductor L61 is connected to the external terminal 3a, and the other end is connected to the external terminal 3b. Further, the external terminal 3a is connected to the capacitor electrode 4 formed on the top surface U of the laminate 2 using a via electrode.
　積層型素子６００は、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを構成した場合、図１１（Ｂ）に示すように、Ｌ型フィルタが構成される。 The stacked element 600 is shown in FIG. 11B when the LC filter is configured by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment. Thus, an L-type filter is configured.
　［第７実施形態；積層型素子７００］
　図１２（Ａ）、（Ｂ）に、第７実施形態にかかる積層型素子７００を示す。ただし、図１２（Ａ）は、積層型素子７００の断面図である。図１２（Ｂ）は、積層型素子７００の等価回路図である。 Seventh Embodiment; Stacked Device 700
12A and 12B show a stacked element 700 according to a seventh embodiment. However, FIG. 12A is a cross-sectional view of the stacked element 700. FIG. 12B is an equivalent circuit diagram of the stacked element 700.
　積層型素子７００は、積層体２の内部に、ビア電極と、インダクタ電極とを使って、１つのインダクタＬ７１が形成されている。そして、インダクタＬ７１は、一方の端部が外部端子３ａに接続され、他方の端部が外部端子３ｂに接続されている。また、積層体２の天面Ｕに、２つのキャパシタ電極７４ａ、７４ｂが形成されている。そして、外部端子３ａがビア電極を使ってキャパシタ電極７４ａに接続され、外部端子３ｂがビア電極を使ってキャパシタ電極７４ｂに接続されている。 In the multilayer element 700, one inductor L71 is formed inside the multilayer body 2 using a via electrode and an inductor electrode. Then, one end of the inductor L71 is connected to the external terminal 3a, and the other end is connected to the external terminal 3b. Further, two capacitor electrodes 74 a and 74 b are formed on the top surface U of the multilayer body 2. The external terminal 3a is connected to the capacitor electrode 74a using a via electrode, and the external terminal 3b is connected to the capacitor electrode 74b using a via electrode.
　積層型素子７００は、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを構成した場合、図１２（Ｂ）に示すように、π型フィルタが構成される。 The stacked element 700 is shown in FIG. 12B when the LC filter is configured by the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment. As such, a π-type filter is configured.
　［第８実施形態；積層型素子８００］
　図１３に、第８実施形態にかかる積層型素子８００を示す。ただし、図１３は、積層型素子８００の断面図である。 Eighth Embodiment: Stacked Device 800
FIG. 13 shows a stacked element 800 according to the eighth embodiment. However, FIG. 13 is a cross-sectional view of the stacked element 800.
　積層型素子８００は、第１実施形態にかかる積層型素子１００の構成の一部に変更を加えた。具体的には、積層型素子１００では、積層体２を構成する基材層１ａ～１ｆの全てを、磁性体セラミックで作製していた。積層型素子８００は、これに代えて、基材層１ｃのみを非磁性体セラミックで作製した。 In the stacked element 800, a part of the configuration of the stacked element 100 according to the first embodiment is modified. Specifically, in the laminated element 100, all of the base layers 1a to 1f constituting the laminated body 2 are made of magnetic ceramic. In the laminated element 800, instead of this, only the base material layer 1c was made of nonmagnetic ceramic.
　積層型素子８００は、基材層１ｃを非磁性体セラミックで作製したことにより、インダクタＬ１およびインダクタＬ２の直流重畳特性が、それぞれ改善されている。積層型素子８００を使用して、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを作製することができる。 In the multilayer element 800, the direct current superposition characteristics of the inductor L1 and the inductor L2 are improved by manufacturing the base material layer 1c with nonmagnetic ceramic. An LC filter can be manufactured using the stacked element 800 according to the same method as the LC filter 150 according to the first embodiment or the same method as the LC filter 250 according to the second embodiment.
　［第９実施形態；積層型素子９００］
　図１４に、第９実施形態にかかる積層型素子９００を示す。ただし、図１４は、積層型素子９００の断面図である。 [Ninth Embodiment; Stacked Device 900]
FIG. 14 shows a stacked element 900 according to the ninth embodiment. However, FIG. 14 is a cross-sectional view of the stacked element 900.
　積層型素子９００は、第１実施形態にかかる積層型素子１００に、構成を追加した。具体的には、積層型素子９００は、積層体２の天面Ｕに形成されたキャパシタ電極４を覆うように、積層体２（基材層１ａ～１ｆ）よりも誘電率の高い材質によって高誘電率層９１を形成した。本実施形態においては、高誘電率層９１に、誘電率が５０以上の誘電体材料を使用し、積層体２を焼成によって作製した後に、積層体２の天面Ｕに誘電体材料を塗布して形成した。なお、磁性体セラミックの積層体２（基材層１ａ～１ｆ）の誘電率は、おおよそ、　１０～１５程度である。 The stacked element 900 has a configuration added to the stacked element 100 according to the first embodiment. Specifically, stacked element 900 is made of a material having a dielectric constant higher than that of stacked body 2 (base layers 1 a to 1 f) so as to cover capacitor electrode 4 formed on top surface U of stacked body 2. A dielectric layer 91 was formed. In the present embodiment, a dielectric material having a dielectric constant of 50 or more is used for the high dielectric constant layer 91, and after the laminate 2 is produced by firing, the dielectric material is applied to the top surface U of the laminate 2 It formed. The dielectric constant of the magnetic ceramic laminate 2 (base layers 1a to 1f) is approximately 10 to 15.
　積層型素子９００は、積層体２の天面Ｕにキャパシタ電極４を覆う高誘電率層９１を形成したことにより、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを構成した場合、キャパシタＣ１が大きなキャパシタンス値をもつ。 The stacked element 900 has a method similar to that of the LC filter 150 according to the first embodiment or the second embodiment by forming the high dielectric constant layer 91 covering the capacitor electrode 4 on the top surface U of the stacked body 2. When the LC filter is configured by the same method as the LC filter 250, the capacitor C1 has a large capacitance value.
　［第１０実施形態；積層型素子１０００］
　図１５に、第１０実施形態にかかる積層型素子１０００を示す。ただし、図１５は、積層型素子１０００の断面図である。 Tenth Embodiment; Stacked Device 1000
FIG. 15 shows a stacked element 1000 according to the tenth embodiment. However, FIG. 15 is a cross-sectional view of the stacked element 1000.
　積層型素子１０００は、第１実施形態にかかる積層型素子１００の構成の一部に変更を加えた。具体的には、積層型素子１００では、積層体２を、６層の磁性体セラミックの基材層１ａ～１ｆで構成していた。積層型素子１０００は、これに代えて、積層体２の基材層１ｆの上に、さらに、１層の高誘電率セラミックからなる基材層１ｇを設けた。７層の基材層１ａ～１ｇは、焼成されて一体化され、積層体２を構成している。なお、キャパシタ電極４は、基材層１ｆと基材層１ｇとの層間に形成される。 The multilayer element 1000 is modified in part of the configuration of the multilayer element 100 according to the first embodiment. Specifically, in the multilayer element 100, the multilayer body 2 is composed of six base layers 1a to 1f of magnetic ceramic. Instead of this, in the multilayer element 1000, a base layer 1g made of a high dielectric constant ceramic is further provided on the base layer 1f of the multilayer body 2. The seven base layers 1a to 1g are fired and integrated to constitute a laminate 2. The capacitor electrode 4 is formed between the base material layer 1 f and the base material layer 1 g.
　基材層１ｇの高誘電率セラミックには、たとえば、誘電率２０以上のものを使用することが好ましい。なお、磁性体セラミックの基材層１ａ～１ｆの誘電率は、おおよそ、１０～１５程度である。 For the high dielectric constant ceramic of the base material layer 1 g, for example, one having a dielectric constant of 20 or more is preferably used. The dielectric constant of the base layers 1a to 1f of the magnetic ceramic is approximately 10 to 15.
　積層型素子９００は、積層体２に高誘電率セラミックからなる基材層１ｇを追加したことにより、第１実施形態にかかるＬＣフィルタ１５０と同様の方法や、第２実施形態にかかるＬＣフィルタ２５０と同様の方法によって、ＬＣフィルタを構成した場合、キャパシタＣ１が大きなキャパシタンス値をもつ。 The multilayer element 900 has the same method as the LC filter 150 according to the first embodiment or the LC filter 250 according to the second embodiment by adding the base material layer 1 g made of high dielectric constant ceramic to the laminate 2. When the LC filter is configured by the same method as in the above, the capacitor C1 has a large capacitance value.
　以上、第１実施形態～第１０実施形態にかかる積層型素子１００、３００、４００、５００、６００、７００、８００、９００、１０００、および、第１実施形態にかかるＬＣフィルタ１５０、第２実施形態にかかるＬＣフィルタ２５０について説明した。しかしながら、本発明が上述した内容に限定されることはなく、発明の趣旨に沿って、種々の変更をなすことができる。 As described above, the stacked filter 100, 300, 400, 500, 600, 700, 800, 900, 1000 according to the first to tenth embodiments, and the LC filter 150 according to the first embodiment, the second embodiment The LC filter 250 has been described. However, the present invention is not limited to the contents described above, and various modifications can be made in accordance with the spirit of the invention.
　たとえば、積層型素子１００等の積層体２の内部に形成されるインダクタの個数、形成位置、接続方法などは任意であり、上述した内容には限定されない。また、積層体２に形成されるキャパシタ電極の個数、形成位置なども任意であり、上述した内容には限定されない。 For example, the number, formation position, connection method, and the like of the inductors formed inside the laminated body 2 such as the laminated element 100 are arbitrary, and the present invention is not limited to the contents described above. Further, the number of capacitor electrodes formed in the laminate 2 and the formation position are also arbitrary, and the present invention is not limited to the contents described above.
　また、積層型素子１００等の積層体２を構成する基材層の層数、材質なども任意であり、上述した内容には限定されない。 Moreover, the number of layers of the base material layer which comprises the laminated bodies 2, such as laminated element 100, a material, etc. are arbitrary, and it is not limited to the content mentioned above.
　また、本発明の積層型素子を使用して、第１実施形態にかかるＬＣフィルタ１５０で示した方法や、第２実施形態にかかるＬＣフィルタ２５０で示した方法とは異なった方法によって、ＬＣフィルタを作製してもよい。 In addition, using the laminated element of the present invention, an LC filter is obtained by a method different from the method shown for the LC filter 150 according to the first embodiment or the method shown for the LC filter 250 according to the second embodiment. May be produced.
１ａ～１ｇ・・・基材層
２・・・積層体
３ａ、３ｂ・・・外部端子
４、４４、７４ａ、７４ｂ・・・キャパシタ電極
５ａ～５ｊ、３５ｋ・・・ビア電極
６ａ～６ｈ・・・インダクタ電極
７、１７、２７・・・基板
８ａ、８ｂ・・・外部端子（入出力端子）
８ｃ・・・外部端子（グランド端子）
９ａ、９ｂ・・・ランド電極
１０、２０・・・接続電極
１１・・・配線電極
１２・・・はんだ
１３・・・封止樹脂
１４・・・金属シールド
２４・・・金属構造体（金属シールド）
９１・・・高誘電率層
１００、３００、４００、５００、６００、７００、８００、９００、１０００・・・積層型素子
１５０、２５０・・・ＬＣフィルタ 1a to 1g ... base material layer 2 ... laminated body 3a, 3b ... external terminals 4, 44, 74a, 74b ... capacitor electrodes 5a to 5j, 35k ... via electrodes 6a to 6h · · · · Inductor electrodes 7, 17, 27 ··· Substrates 8a, 8b · · · External terminals (input and output terminals)
8c ・ ・ ・ External terminal (ground terminal)
9a, 9b · · · Land electrode 10, 20 · · · Connection electrode 11 · · · Wiring electrode 12 · · · Solder 13 · · · sealing resin 14 · · · metal shield 24 · · · metal structure (metal shield (metal shield )
91: high dielectric constant layer 100, 300, 400, 500, 600, 700, 800, 900, 1000: stacked element 150, 250: LC filter

Claims (12)

  1. 　複数の基材層が積層され、実装面と、天面と、前記実装面と前記天面とを繋ぐ複数の側面とを含む外表面を有する積層体と、
    　前記基材層の層間に形成された、少なくとも１つのインダクタ電極と、
    　前記外表面に形成された、または、前記インダクタ電極よりも前記天面側の前記基材層の層間に形成された、少なくとも１つのキャパシタ電極と、
    　前記外表面に形成された、外部に接続するための少なくとも２つの外部端子と、を備え、
    　前記インダクタ電極を使って、少なくとも１つのインダクタが構成され、
    　２つの前記外部端子の間に前記インダクタが接続され、かつ、少なくとも１つの前記インダクタと前記キャパシタ電極とが接続された、積層型素子。     A laminate having an outer surface including a plurality of base material layers stacked, a mounting surface, a top surface, and a plurality of side surfaces connecting the mounting surface and the top surface;
    At least one inductor electrode formed between layers of the substrate layer;
    At least one capacitor electrode formed on the outer surface or formed between layers of the base material layer closer to the top surface than the inductor electrode;
    And at least two external terminals formed on the outer surface for external connection,
    At least one inductor is configured using the inductor electrode,
    A stacked element in which the inductor is connected between two external terminals, and at least one of the inductor and the capacitor electrode are connected.
  2. 　前記キャパシタ電極が、前記天面に形成された、請求項１に記載された積層型素子。 The stacked element according to claim 1, wherein the capacitor electrode is formed on the top surface.
  3. 　前記キャパシタ電極が、前記側面に形成された、請求項１または２に記載された積層型素子。 The stacked device according to claim 1, wherein the capacitor electrode is formed on the side surface.
  4. 　前記天面および／または前記側面に形成された前記キャパシタ電極を覆う、前記積層体よりも誘電率の高い材質の高誘電率層を、さらに備えた、請求項２または３に記載された積層型素子。 The laminated type according to claim 2 or 3, further comprising a high dielectric constant layer of a material having a dielectric constant higher than that of the laminated body, covering the capacitor electrode formed on the top surface and / or the side surface. element.
  5. 　前記外部端子が、前記実装面に形成された、請求項１ないし４のいずれか1項に記載された積層型素子。 The stacked element according to any one of claims 1 to 4, wherein the external terminal is formed on the mounting surface.
  6. 　前記基材層の少なくとも１層が磁性体である、請求項１ないし５のいずれか1項に記載された積層型素子。 The laminated element according to any one of claims 1 to 5, wherein at least one layer of the base material layer is a magnetic material.
  7. 　前記インダクタと前記キャパシタ電極との間に、さらに別のインダクタが挿入された、請求項１ないし６のいずれか1項に記載された積層型素子。 The stacked element according to any one of claims 1 to 6, wherein another inductor is inserted between the inductor and the capacitor electrode.
  8. 　請求項１ないし７のいずれか1項に記載された積層型素子と、
    　金属シールドと、を備え、
    　前記金属シールドは、前記積層型素子を覆うように配置され、
    　前記金属シールドと、前記積層型素子の前記キャパシタ電極との間に発生する容量によりキャパシタが構成された、ＬＣフィルタ。     A stacked element according to any one of claims 1 to 7;
    Equipped with a metal shield,
    The metal shield is disposed to cover the stacked element.
    An LC filter, wherein a capacitor is configured by a capacitance generated between the metal shield and the capacitor electrode of the stacked element.
  9. 　前記金属シールドと前記キャパシタ電極との間に、さらに樹脂が設けられた、請求項８に記載されたＬＣフィルタ。 The LC filter according to claim 8, further comprising a resin provided between the metal shield and the capacitor electrode.
  10. 　前記金属シールドと前記キャパシタ電極との間が空間である、請求項８に記載されたＬＣフィルタ。 The LC filter according to claim 8, wherein a space is provided between the metal shield and the capacitor electrode.
  11. 　さらに基板を備え、
    　前記積層型素子が前記基板に実装された、請求項８ないし１０のいずれか１項に記載されたＬＣフィルタ。     In addition to the substrate,
    The LC filter according to any one of claims 8 to 10, wherein the stacked element is mounted on the substrate.
  12. 　前記基板の下側主面にグランド端子が形成され、
    　前記金属シールドが前記グランド端子に接続された、請求項１１に記載されたＬＣフィルタ。     A ground terminal is formed on the lower main surface of the substrate,
    The LC filter according to claim 11, wherein the metal shield is connected to the ground terminal.
PCT/JP2018/020249 2017-06-19 2018-05-25 Laminated element and lc filter WO2018235527A1 (en)

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