WO2018230457A1 - Substrate processing device - Google Patents

Substrate processing device Download PDF

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Publication number
WO2018230457A1
WO2018230457A1 PCT/JP2018/021994 JP2018021994W WO2018230457A1 WO 2018230457 A1 WO2018230457 A1 WO 2018230457A1 JP 2018021994 W JP2018021994 W JP 2018021994W WO 2018230457 A1 WO2018230457 A1 WO 2018230457A1
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WO
WIPO (PCT)
Prior art keywords
substrate
mother glass
glass substrate
processed
processing
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Application number
PCT/JP2018/021994
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French (fr)
Japanese (ja)
Inventor
晶 井谷
Original Assignee
シャープ株式会社
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Publication date
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Publication of WO2018230457A1 publication Critical patent/WO2018230457A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a substrate processing apparatus.
  • a conductive film or an insulating film is formed on the surface of a glass substrate by a photolithography method and patterned.
  • a substrate processing apparatus described in Patent Document 1 below is used.
  • the substrate processing apparatus includes an end support roller that is provided on the transport shaft and supports the lower surfaces of both ends of the substrate in the width direction, and a plurality of transport rollers that support the lower surface of a portion excluding both ends of the transport shaft in the substrate width direction, A pair of upper rollers, which are provided on a portion of the upper roller shaft facing the pair of end support rollers and press the upper end surface in the width direction of the substrate with the lower end surface in the width direction supported by the end support rollers. And a notch is formed in the upper roller.
  • the rotation shaft that pivotally supports the upper roller is parallel to the surface to be processed of the substrate, and the entire area of the upper roller overlaps the substrate.
  • the dimension of the upper roller protruding from the surface to be processed of the substrate toward the nozzle supplying the processing liquid is equal to the diameter of the upper roller.
  • the present invention has been completed based on the above circumstances, and an object thereof is to suppress the occurrence of processing unevenness.
  • a substrate processing apparatus of the present invention includes a processing liquid supply unit that supplies a processing liquid to a surface to be processed of a substrate, a parallel rotation axis whose axis is parallel to the processing surface, and a shaft that is rotatable by the parallel rotation shaft.
  • a substrate transport roller that supports the substrate in a state in which the substrate can be transported from the side opposite to the surface to be processed, and a substrate transport unit that transports the substrate; and an axial direction of the substrate transport roller
  • an auxiliary substrate transfer unit that is arranged in a non-overlapping manner to assist the transfer of the substrate.
  • the substrate transport unit is configured such that the substrate transport roller that supports the substrate from the side opposite to the surface to be processed is rotated around the axis of the parallel rotation axis whose axis is parallel to the surface to be processed.
  • the substrate is transported, and the processing surface is processed by supplying the processing liquid to the processing surface of the transported substrate from the processing liquid supply unit.
  • Auxiliary substrate transfer unit is a substrate holding roller that holds the substrate from the surface to be processed and rotates around the axis of the intersecting rotation axis in synchronization with the rotation of the substrate transfer roller.
  • the auxiliary substrate transport unit is arranged in such a manner that the axial direction of the intersecting rotation shaft that pivotally supports the substrate pressing roller intersects the surface to be processed and a part thereof does not overlap the substrate.
  • the dimension of the pressing roller protruding from the processing surface of the substrate toward the processing liquid supply unit is smaller than the diameter of the substrate pressing roller.
  • FIG. 1 is a schematic cross-sectional view showing a cross-sectional configuration of a liquid crystal panel according to Embodiment 1 of the present invention.
  • Side sectional view of the substrate processing apparatus showing a state in which the mother glass substrate is carried into the wet etching processing tank
  • Plan sectional view of the substrate processing apparatus showing a state in which the mother glass substrate is carried into the wet etching processing tank
  • Front sectional view of the substrate processing apparatus showing a state in which the mother glass substrate is carried into the wet etching processing tank
  • Sectional drawing of the substrate processing apparatus which shows the state by which the mother glass substrate was carried in the washing tank
  • Front sectional view of a substrate processing apparatus showing a state where a mother glass substrate according to Embodiment 2 of the present invention is carried into a wet etching processing tank
  • Front sectional view of a substrate processing apparatus showing a state in which a mother glass substrate according to a reference example is carried into a wet etching tank
  • FIGS. 1 A first embodiment of the present invention will be described with reference to FIGS.
  • a wet etching apparatus (substrate processing apparatus) 20 used for manufacturing the respective substrates 11a and 11b in the liquid crystal panel (display panel) 11 constituting the liquid crystal display apparatus is illustrated.
  • a part of each drawing shows an X axis, a Y axis, and a Z axis, and each axis direction is drawn to be a direction shown in each drawing.
  • the Z-axis direction coincides with the vertical direction
  • the X-axis direction and the Y-axis direction coincide with the horizontal direction.
  • the upper and lower descriptions are based on the vertical direction (FIGS. 2, 4 and 5).
  • the liquid crystal panel 11 is formed by enclosing a liquid crystal layer 11c containing a liquid crystal material, which is a substance whose optical characteristics change with application of an electric field, between a pair of substrates 11a and 11b.
  • a liquid crystal material which is a substance whose optical characteristics change with application of an electric field
  • the two substrates 11a and 11b constituting the liquid crystal panel 11 the one arranged on the front side (light emitting side) is the CF substrate (counter substrate) 11a, and the one arranged on the back side (backlight device side) is the array.
  • a substrate (active matrix substrate, TFT substrate) 11b is used.
  • Each of the CF substrate 11a and the array substrate 11b is formed by sequentially laminating a predetermined film (structure) on the inner surface side of a glass substrate GS that is almost transparent and has excellent translucency by a known photolithography method. It is said.
  • a pair of front and back polarizing plates 11d and 11e are attached to the outer surface sides of both substrates 11a and 11b, respectively.
  • TFTs Thin Film Transistors
  • pixel electrodes 11g which are switching elements. They are provided one by one in a matrix.
  • a gate wiring and a source wiring are arranged around the TFT 11f and the pixel electrode 11g.
  • the pixel electrode 11g is made of a transparent electrode material such as ITO (Indium Tin Oxide).
  • ITO Indium Tin Oxide
  • the pixel electrode 11g is charged with a predetermined potential by the TFT 11f.
  • Various insulating films are provided on the inner surface side of the array substrate 11b.
  • three colors of red (R), green (G), and blue (B) are provided on the inner surface side of the CF substrate 11a (the liquid crystal layer 11c side and the surface facing the array substrate 11b).
  • a color filter (colored portion) 11h and a light blocking portion (black matrix) 11i that blocks light are provided.
  • the color filter 11h is arranged so as to overlap with each pixel electrode 11g on the array substrate 11b in a plan view, and constitutes a pixel portion of three colors of R, G, and B together with each pixel electrode 11g.
  • the light-shielding portion 11i is arranged so as to overlap with the gate wiring and source wiring on the array substrate 11b side in a plan view, and partitions between adjacent pixel portions (pixel electrodes 11g).
  • An overcoat film (insulating film) 11j made of an insulating material is provided on the upper layer side of the color filter 11h.
  • a counter electrode 11k is provided so as to overlap the inside.
  • the counter electrode 11k is formed in a solid shape over almost the entire area of the inner surface of the CF substrate 11a.
  • the counter electrode 11k is made of the same transparent electrode material as the pixel electrode 11g, and is always kept at a constant reference potential. Accordingly, when each pixel electrode 11g connected to each TFT 11f is charged as each TFT 11f is driven, a potential difference may be generated between each pixel electrode 11g.
  • the alignment state of the liquid crystal molecules contained in the liquid crystal layer 11c changes based on the potential difference generated between the counter electrode 11k and each pixel electrode 11g, and the polarization state of the transmitted light changes accordingly.
  • the amount of transmitted light is individually controlled for each pixel and a predetermined color image is displayed.
  • the innermost surfaces of both the substrates 11a and 11b are respectively provided with alignment films 11l and 11m that are arranged so as to face the liquid crystal layer 11c and align liquid crystal molecules.
  • Each of the substrates 11a and 11b having the above-described configuration includes each conductive film (including a metal film and a transparent electrode film) forming various electrodes and various wirings on the plate surface of the glass substrate GS using a known photolithography method. ) And each insulating film are repeatedly formed and patterned.
  • a film forming process in which each film is formed on the glass substrate GS a resist forming process in which a photoresist made of a photosensitive material is applied on each film to form a resist film, and a resist film Are exposed through a photomask according to the pattern of each film, a developing process for developing the exposed resist film, an etching process for removing a portion of each film that is not covered by the resist film, Each film is formed and patterned through a resist stripping process for stripping the resist film.
  • a wet etching apparatus 20 described below is used.
  • a mother glass substrate (substrate, glass substrate base material) MG in which a plurality of glass substrates (unit substrates) GS are arranged side by side in the plate surface is processed by the wet etching apparatus 20. .
  • the wet etching apparatus 20 is arranged on a wet etching treatment tank (treatment tank) 21 that performs wet etching on the mother glass substrate MG, and on the downstream side (right side in FIG. 2) of the wet etching treatment tank 21. Then, a cleaning tank (processing tank) 22 for cleaning the processed mother glass substrate MG, a substrate transfer part 23 for transferring the mother glass substrate MG in the order of the wet etching process tank 21 and the cleaning tank 22, and a substrate transfer part 23 And an auxiliary substrate transport unit 24 that assists in transporting the mother glass substrate MG.
  • the wet etching treatment tank 21 and the cleaning tank 22 are arranged adjacent to each other in order from the upstream side (left side in FIG.
  • the mother glass substrate MG conveyed by the substrate conveyance unit 23 and the auxiliary substrate conveyance unit 24 has carry-in entrances 21a and 22a and carry-out exits 21b and 22b for carrying in and carrying out, respectively.
  • a carry-out port 21b of the wet etching treatment tank 21 and a carry-in port 22a of the cleaning tank 22 are adjacent to each other and communicate with each other.
  • the surface to be processed MGa on which a film to be etched or a resist film is formed is in the vertical direction (normal direction of the surface to be processed MGa). The posture is directed to the upper side (upper side in FIG. 2).
  • the conveyance direction of the mother glass substrate MG by the substrate conveyance unit 23 and the auxiliary substrate conveyance unit 24 coincides with the X-axis direction shown in FIGS. 2 to 5, and the conveyance direction and the width direction orthogonal to the vertical direction are These coincide with the Y-axis direction shown in FIGS.
  • the wet etching treatment tank 21 performs a wet etching process on the mother glass substrate MG by supplying an etching liquid (treatment liquid, etchant) EL to the surface MGa to be processed of the mother glass substrate MG. Since the etchant EL used in the wet etching process has corrosiveness to the film to be etched, it is possible to corrode and remove the exposed part of the film that is not covered by the resist film. Is done.
  • the wet etching processing tank 21 includes an etching liquid discharge unit (processing liquid supply unit, processing liquid discharge unit) 25 that discharges the etching liquid EL onto the surface to be processed MGa of the mother glass substrate MG.
  • the etchant discharge unit 25 is positioned away from the upper side (the processed surface MGa side and the side opposite to the substrate transport unit 23 side) in the vertical direction (Z-axis direction) with respect to the mother glass substrate MG, and is wet-etched.
  • a plurality (five in this embodiment) are arranged side by side along the transport direction (X-axis direction) from the vicinity of the transport inlet 21a in the processing tank 21 toward the downstream side (the transport outlet 21b side). .
  • a plurality (three in FIG. 4) of the etchant discharge portions 25 are arranged side by side in the width direction (Y-axis direction).
  • the cleaning tank 22 supplies a cleaning liquid CL to the target surface MGa of the mother glass substrate MG that has passed through the wet etching processing tank 21 to perform a cleaning process for cleaning the target surface MGa.
  • the cleaning liquid CL is made of pure water or ultrapure water, for example.
  • the cleaning tank 22 has a cleaning liquid discharge section (processing liquid supply section, processing liquid discharge section) 26 that discharges the cleaning liquid CL onto the surface to be processed MGa of the mother glass substrate MG.
  • the cleaning liquid discharge unit 26 is located apart from the upper side (processed surface MGa side) in the vertical direction (Z-axis direction) with respect to the mother glass substrate MG, and is located downstream from the vicinity of the carry-in port 22a in the cleaning tank 22 (loading).
  • a plurality (five in this embodiment) are arranged side by side along the transport direction (X-axis direction) toward the outlet 22b side.
  • a plurality of the cleaning liquid discharge units 26 are arranged in the width direction (Y-axis direction) in the same manner as the etching liquid discharge unit 25.
  • the substrate transport unit 23 transports the mother glass substrate MG while supporting the mother glass substrate MG from below in the vertical direction (on the opposite side MGb to be processed and opposite to the side to be processed MGa).
  • 23a and a parallel rotation shaft 23b whose axial direction is parallel to the plate surface of the mother glass substrate MG (surface to be processed MGa and surface MGb to be processed) and rotatably supports the substrate transport roller 23a.
  • the substrate transport roller 23a is positioned on the lower side in the vertical direction with respect to the mother glass substrate MG and is rotated around the axis of the parallel rotation shaft 23b while being in contact with the opposite surface MGb to be processed. Transport along the X-axis direction. As shown in FIG.
  • the substrate transport roller 23 a is pivotally supported so as to be rotatable in a form in which a plurality are arranged at intervals in the axial direction with respect to the parallel rotation shaft 23 b.
  • the substrate transport roller 23a and the parallel rotating shaft 23b are arranged in all of the wet etching processing tank 21 and the cleaning tank 22, and a plurality of each are spaced along the X-axis direction (transport direction) in each of the tanks 21 and 22. They are arranged side by side.
  • the parallel rotation shaft 23b is connected to a motor (not shown) that is a power source, so that the parallel rotation shaft 23b can rotate in either the forward or reverse direction.
  • the parallel rotation shaft 23b is controlled by a motor controller (not shown) to drive the motor, so that the rotation direction of the parallel rotation shaft 23b and the substrate transport roller 23a, and per unit time of the parallel rotation shaft 23b and the substrate transport roller 23a.
  • the number of rotations, that is, the rotation speed is adjusted as appropriate.
  • the substrate transport unit 23 repeatedly rotates the substrate transport roller 23a in the forward and reverse directions while the etching solution EL and the cleaning solution CL are supplied by the etching solution discharge unit 25 and the cleaning solution discharge unit 26 in the respective tanks 21 and 22.
  • the mother glass substrate MG can be reciprocated (oscillated).
  • the parallel rotating shaft 23b is arranged in a posture inclined with respect to the horizontal direction as shown in FIG.
  • the parallel rotation shaft 23b is not inclined with respect to the X-axis direction, but is inclined only with respect to the Y-axis direction, and from one end side (left side in FIG. 4) to the other end side (right side in FIG. 4) in the Y-axis direction. It has the inclination which becomes an up-slope toward.
  • the plurality of substrate transport rollers 23a pivotally supported by the parallel rotation shaft 23b change in height in the Z-axis direction according to the position in the Y-axis direction.
  • the one arranged on one end side is arranged at a relatively low position, and the one arranged on the other end side in the Y-axis direction is arranged at a relatively high position.
  • the mother glass substrate MG transported by the substrate transport unit 23 having such a configuration is inclined with respect to the horizontal direction along the axial direction of the parallel rotation shaft 23b. Therefore, the etching liquid EL and the cleaning liquid CL supplied onto the surface to be processed MGa of the mother glass substrate MG in each of the tanks 21 and 22 are efficiently lowered downward by gravity on the surface to be processed MGa inclined with respect to the horizontal direction. It will flow.
  • the installation height in the Z-axis direction of the etching solution discharge units 25 and the cleaning solution discharge units 26 arranged in a plurality along the Y-axis direction in each of the tanks 21 and 22 changes in accordance with the inclination of the parallel rotation shaft 23b. Has been placed.
  • the auxiliary substrate transfer unit 24 moves the mother glass substrate MG from the upper side in the Z-axis direction (vertical direction) (on the side opposite to the processing surface MGa side and the processing opposite surface MGb side).
  • the substrate pressing roller 24a that transports while pressing, and the cross rotation in which the axial direction intersects the plate surface of the mother glass substrate MG (surface to be processed MGa and surface to be processed MGb) and the substrate pressing roller 24a is rotatably supported.
  • a shaft 24b is provided in each tank 21, 22 in such a manner that two each are arranged at positions separated from each other in the X-axis direction. It is possible to always assist the conveyance of the mother glass substrate MG.
  • the auxiliary substrate transport unit 24 is arranged so that a part thereof does not overlap with the mother glass substrate MG. Specifically, at least a portion of the substrate pressing roller 24a that constitutes the auxiliary substrate transport unit 24 that presses the mother glass substrate MG from the upper side (including a processed surface contact portion 27 described later) is flat with the mother glass substrate MG. However, the other portions and the intersecting rotation axis 24b are arranged so as not to overlap with the mother glass substrate MG in a plan view.
  • the substrate pressing roller 24a is arranged so as to be partially offset in the Y-axis direction with respect to the mother glass substrate MG, and a portion of the substrate pressing roller 24a that does not overlap with the mother glass substrate MG intersects with the rotation axis.
  • the substrate pressing roller 24a is arranged adjacent to the outside in the Y-axis direction with respect to the mother glass substrate MG.
  • a part of the substrate pressing roller 24a is overlapped with the lower end in the Z-axis direction of the mother glass substrate MG and presses the lower end.
  • part of the substrate pressing roller 24a (processed surface contact portion 27) protrudes upward in the Z-axis direction from the process target surface MGa of the mother glass substrate MG, most of the substrate presser roller 24a (the target surface opposite to the process target will be described later). (Including the contact portion 28) is disposed below the surface to be processed MGa in the Z-axis direction.
  • the size of the substrate pressing roller 24a as well as the diameter of the substrate pressing roller 24a is such that the substrate pressing roller 24a protrudes from the surface MGa to be processed of the mother glass substrate MG to the upper side in the Z-axis direction (etching solution discharge unit 25 and cleaning solution discharge unit 26 side). Is smaller than Accordingly, the flow of the etching liquid EL and the cleaning liquid CL supplied to the processing surface MGa of the mother glass substrate MG by the substrate pressing roller 24a is not easily disturbed, so that the etching liquid EL and the cleaning liquid CL caused by the substrate pressing roller 24a can be prevented. Stagnation is less likely to occur.
  • the processing with the etching liquid EL and the cleaning liquid CL is made uniform in the surface of the surface to be processed MGa of the mother glass substrate MG. Specifically, in the wet etching treatment tank 21, the etching rate by the etching liquid EL is made uniform, and in the cleaning tank 22, the degree of washing by the cleaning liquid CL is made uniform.
  • the substrate pressing roller 24a constituting the auxiliary substrate transport unit 24 includes a surface to be processed contact portion 27 that contacts the surface to be processed MGa of the mother glass substrate MG, and a surface to be processed of the mother glass substrate MG.
  • a processing opposite surface contact portion 28 that contacts the processing opposite surface MGb, and the processing surface contact portion 27 and the processing opposite surface contact portion 28 are below the mother glass substrate MG.
  • the substrate pressing roller 24a sandwiches the mother glass substrate MG from both sides in the plate thickness direction (the axial direction of the cross rotation shaft 24b) between the processing surface contact portion 27 and the processing surface opposite surface contact portion 28. Assist with transport while holding in shape.
  • a groove 24a1 having a V-shaped cross-section is provided around the entire circumference at the center position in the thickness direction (the axial direction of the cross rotation shaft 24b). It is possible to insert the lower end of the mother glass substrate MG.
  • the groove edge of the above-described groove 24a1 in the substrate pressing roller 24a extends so as to intersect the plate surface of the mother glass substrate MG.
  • the to-be-processed surface contact part 27 and the to-be-processed surface contact part 28 comprise the groove edge of above-mentioned groove
  • Point contact is made with respect to the processing opposite surface MGb.
  • the substrate pressing roller 24a is subjected to the processing surface contact portion 27 that contacts the processing surface MGa of the mother glass substrate MG and the processing surface that contacts the processing target opposite surface MGb of the mother glass substrate MG. Since the mother glass substrate MG is sandwiched between the opposite surface abutting portion 28, the conveyance of the mother glass substrate MG by the substrate conveyance portion 23 and the auxiliary substrate conveyance portion 24 becomes more stable and occurs with the conveyance. The fluttering of the mother glass substrate MG to be obtained can be more suitably suppressed.
  • the processed surface contact portion 27 and the processed opposite surface contact portion 28 of the substrate pressing roller 24a are in point contact with the mother glass substrate MG, the processed surface contact portion 27 and the processed opposite surface contact portion.
  • the adverse effect on the mother glass substrate MG that may occur as 28 comes into contact with the mother glass substrate MG can be reduced.
  • the outer surface (surface) 24a2 opposite to the mother glass substrate MG side of the substrate pressing roller 24a is inclined with respect to the axial direction of the cross rotation shaft 24b.
  • the substrate pressing roller 24a has a slope such that the outer surface 24a2 approaches the center in the thickness direction of the substrate pressing roller 24a from the cross rotation shaft 24b side (center side) toward the outer peripheral end side. Accordingly, in the substrate pressing roller 24a, the thicknesses of the processing surface contact portion 27 and the processing opposite surface contact portion 28 are gradually decreased from the cross rotation shaft 24b side (center side) toward the outer peripheral end side.
  • the surface contact portion 27 to be processed and the surface contact portion 28 to be processed have a tapered cross-sectional shape and have a minimum thickness at the outer peripheral end.
  • the etching liquid EL and the cleaning liquid CL supplied to the target surface MGa of the mother glass substrate MG in each of the tanks 21 and 22 are the mother glass substrate MG in the substrate pressing roller 24a of the auxiliary substrate transport unit 24.
  • the outer surface 24a2 on the opposite side to the side is reached, the outer surface 24a2 is inclined with respect to the axial direction of the intersecting rotation shaft 24b, thereby ensuring fluidity on the outer surface 24a2.
  • the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
  • the substrate pressing roller 24a since the substrate pressing roller 24a has a minimum thickness at the outer peripheral end, the flow of the etching liquid EL and the cleaning liquid CL supplied to the surface to be processed MGa of the mother glass substrate MG in each of the tanks 21 and 22 is the substrate pressing roller. It becomes difficult to be disturbed by the outer peripheral edge of 24a. Thereby, the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
  • the axis of rotation of the intersecting rotary shaft 24 b is parallel to the normal direction of the surface to be processed MGa of the mother glass substrate MG.
  • the axis direction of the cross rotation shaft 24b is inclined with respect to the vertical direction, and the inclination angle thereof is substantially equal to the inclination angle formed by the axis direction of the parallel rotation shaft 23b constituting the substrate transport unit 23 with respect to the horizontal direction. It has become. That is, the axis direction of the intersecting rotation shaft 24 b is orthogonal to the axis direction of the parallel rotation shaft 23 b that constitutes the substrate transport unit 23.
  • the size of the substrate pressing roller 24a protruding from the surface to be processed MGa of the mother glass substrate MG toward the etching liquid discharge unit 25 or the cleaning liquid discharge unit 26 as the processing liquid supply unit is minimized.
  • the retention of the etching liquid EL or the cleaning liquid CL, which is the processing liquid due to the roller 24a, is less likely to occur.
  • the mother glass substrate MG placed on the substrate transport roller 23a of the substrate transport unit 23 is subjected to a wet etching process in accordance with the rotation of the substrate transport roller 23a and the parallel rotation shaft 23b. It is carried into the inside from the carry-in port 21 a of the tank 21.
  • the etching solution EL discharged from the etching solution discharge unit 25 is supplied to the processing surface MGa of the mother glass substrate MG carried into the wet etching processing tank 21.
  • the portion not covered with the resist film is corroded and removed by the etching liquid EL.
  • the substrate transfer unit 23 When supplying the etching solution EL by the etching solution discharge unit 25, the substrate transfer unit 23 repeatedly rotates the substrate transfer roller 23a and the parallel rotation shaft 23b disposed in the wet etching processing tank 21 in the forward and reverse directions.
  • the mother glass substrate MG is reciprocated and conveyed within a range where the etching liquid EL is dispersed. 2 and 5, a state in which the mother glass substrate MG moves to the upstream side and the downstream side with the reciprocating conveyance is illustrated by a two-dot chain line.
  • the auxiliary substrate conveyance unit 24 is configured such that the substrate pressing roller 24a that holds the mother glass substrate MG from the processing surface MGa side intersects with the rotation of the substrate conveyance roller 23a.
  • the mother glass substrate MG can be transported in a stable manner in a manner that suppresses fluttering of the mother glass substrate MG that may occur with transport, and the mother glass substrate MG is stably transported.
  • the etching process is performed while reciprocating the glass substrate MG. Therefore, the mother glass substrate MG is conveyed while rotating the substrate conveyance roller and the parallel rotation shaft only in the positive direction (one direction).
  • the degree of freedom related to setting conditions such as the processing time of the mother glass substrate MG is higher.
  • the parallel rotation shaft 23b constituting the substrate transport unit 23 is tilted with respect to the horizontal direction, the surface to be processed MGa of the mother glass substrate MG to be transported reciprocally is tilted with respect to the horizontal direction.
  • the etching liquid EL supplied onto the surface MGa is efficiently flowed over the surface to be processed MGa using gravity, and the efficiency of the etching process is improved.
  • there is a concern that the etching liquid EL flowing on the surface to be processed MGa using gravity is prevented from flowing by the substrate pressing roller 24a.
  • the auxiliary substrate transport unit 24 has a shape in which the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG.
  • the substrate pressing roller 24a protrudes upward from the processing surface MGa of the mother glass substrate MG so that the diameter of the substrate pressing roller 24a is naturally smaller than the thickness. This makes it difficult for the substrate pressing roller 24a to hinder the flow of the etching liquid EL supplied to the processing surface MGa of the mother glass substrate MG, so that the etching liquid EL near the substrate pressing roller 24a is caused by the substrate pressing roller 24a. Becomes difficult to stay. Therefore, the etching process using the etching liquid EL, that is, the etching rate is made uniform in the surface of the target surface MGa of the mother glass substrate MG.
  • the substrate transfer unit 23 transfers the mother glass substrate MG to the downstream side, and cleans it from the outlet 21b of the wet etching tank 21 through the inlet 22a of the cleaning tank 22. Carry into the tank 22. It is preferable that the conveyance speed at this time is faster than the conveyance speed at the time of reciprocal conveyance in the tanks 21 and 22.
  • the cleaning liquid CL discharged from the cleaning liquid discharge section 26 is supplied to the surface to be processed MGa of the mother glass substrate MG.
  • the etching liquid EL can be removed by cleaning the surface to be processed MGa of the mother glass substrate MG with the cleaning liquid CL.
  • the substrate transport unit 23 repeatedly rotates the substrate transport roller 23 a and the parallel rotation shaft 23 b disposed in the cleaning tank 22 in the forward and reverse directions, thereby spraying the cleaning liquid CL.
  • the mother glass substrate MG is reciprocated.
  • the auxiliary substrate conveyance unit 24 is configured such that the substrate pressing roller 24a that holds the mother glass substrate MG from the processing surface MGa side intersects with the rotation of the substrate conveyance roller 23a.
  • the mother glass substrate MG can be transported in a stable manner in a manner that suppresses fluttering of the mother glass substrate MG that may occur with transport, and the mother glass substrate MG is stably transported.
  • the cleaning process is performed while reciprocating the glass substrate MG. Therefore, the cleaning process is performed while the mother glass substrate MG is transported by rotating the substrate transport roller and the parallel rotation shaft only in the positive direction. Compared with the case where it does in this way, the freedom degree which concerns on condition settings, such as processing time of the mother glass substrate MG, becomes a high thing. Moreover, since the parallel rotation shaft 23b constituting the substrate transport unit 23 is tilted with respect to the horizontal direction, the surface to be processed MGa of the mother glass substrate MG to be transported reciprocally is tilted with respect to the horizontal direction. The cleaning liquid CL supplied onto the surface MGa efficiently flows on the surface to be processed MGa using gravity, and the cleaning process is made more efficient.
  • the auxiliary substrate transport unit 24 has a shape in which the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG.
  • the substrate pressing roller 24a protrudes upward from the processing surface MGa of the mother glass substrate MG so that the diameter of the substrate pressing roller 24a is naturally smaller than the thickness.
  • the flow of the cleaning liquid CL supplied to the processing surface MGa of the mother glass substrate MG is hardly hindered by the substrate pressing roller 24a, so that the cleaning liquid CL stays in the vicinity of the substrate pressing roller 24a due to the substrate pressing roller 24a. It becomes difficult to do. Therefore, the cleaning process using the cleaning liquid CL is made uniform in the surface of the target surface MGa of the mother glass substrate MG.
  • the substrate transport unit 23 carries the mother glass substrate MG out of the outlet 22 b of the cleaning tank 22 to the outside.
  • the wet etching apparatus (substrate processing apparatus) 20 of the present embodiment is a processing liquid supply unit that supplies the etching liquid EL and the cleaning liquid CL, which are processing liquids, to the processing surface MGa of the mother glass substrate (substrate) MG.
  • the etching liquid discharge part 25 and the cleaning liquid discharge part 26, the parallel rotation shaft 23b whose axis is parallel to the surface to be processed MGa, and the mother glass substrate MG that is rotatably supported by the parallel rotation shaft 23b A substrate transport roller 23a that supports the substrate in a state in which the substrate can be transported from the opposite side, and a substrate transport unit 23 that transports the mother glass substrate MG, and a cross rotation axis whose axis direction intersects the surface to be processed MGa 24b and a substrate pressing roller that is rotatably supported by the intersecting rotating shaft 24b and presses the mother glass substrate MG in a state in which it can be conveyed from the processing surface MGa side.
  • an auxiliary substrate conveying portion 24 for assisting the transfer of the mother glass substrate MG part have is arranged in a manner to be non-overlapping with respect to the mother glass substrate MG have, a.
  • the substrate transport unit 23 includes the substrate transport roller 23a that supports the mother glass substrate MG from the side opposite to the surface to be processed MGa, and the parallel rotation shaft 23b whose axis is parallel to the surface to be processed MGa.
  • the mother glass substrate MG is conveyed by being rotated around the axis, and the processing liquid is supplied from the etching liquid discharge unit 25 and the cleaning liquid discharge unit 26 which are processing liquid supply units to the processing surface MGa of the mother glass substrate MG being transferred.
  • the processing surface MGa is processed by supplying the etching liquid EL and the cleaning liquid CL.
  • the auxiliary substrate transport unit 24 transports the substrate pressing roller 24a that presses the mother glass substrate MG from the processing surface MGa side by rotating around the axis of the cross rotation shaft 24b in synchronization with the rotation of the substrate transport roller 23a.
  • the conveyance of the mother glass substrate MG is assisted in a manner that suppresses the fluttering of the mother glass substrate MG that may occur along with this.
  • the auxiliary substrate transport unit 24 is configured such that the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG.
  • the dimension of the substrate pressing roller 24a is larger than the diameter of the substrate pressing roller 24a. It is getting smaller. Accordingly, the flow of the etching liquid EL and the cleaning liquid CL, which are processing liquids supplied to the processing surface MGa of the mother glass substrate MG by the substrate pressing roller 24a, is not easily disturbed. It is difficult for a certain etching solution EL or cleaning solution CL to stay. Accordingly, the processing with the etching liquid EL and the cleaning liquid CL, which are processing liquids, is made uniform within the surface of the target surface MGa of the mother glass substrate MG.
  • the outer surface (surface) 24a2 opposite to the mother glass substrate MG side of the substrate pressing roller 24a is inclined with respect to the axial direction of the cross rotation shaft 24b.
  • the etching liquid EL or the cleaning liquid CL which is the processing liquid supplied to the processing surface MGa of the mother glass substrate MG, is opposite to the mother glass substrate MG side in the substrate pressing roller 24a of the auxiliary substrate transport unit 24.
  • the outer surface 24a2 on the side is reached, the outer surface 24a2 is inclined with respect to the axial direction of the intersecting rotation shaft 24b, thereby ensuring fluidity on the outer surface 24a2.
  • the retention of the etching liquid EL and the cleaning liquid CL which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
  • the thickness of the auxiliary substrate transport unit 24 becomes smaller as the substrate pressing roller 24a is closer to the outer peripheral end side than the cross rotation shaft 24b side. In this way, since the thickness of the substrate pressing roller 24a is minimized at the outer peripheral end, the flow of the etching liquid EL and the cleaning liquid CL, which are the processing liquid supplied to the processing surface MGa of the mother glass substrate MG, is the substrate. It becomes difficult to be hindered by the outer peripheral end of the pressing roller 24a. Thereby, the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
  • the axial direction of the intersecting rotation shaft 24b is parallel to the normal direction of the processing surface MGa of the mother glass substrate MG. In this way, it is possible to minimize the size of the substrate pressing roller 24a protruding from the surface to be processed MGa of the mother glass substrate MG toward the etching liquid discharge unit 25 or the cleaning liquid discharge unit 26 that is the processing liquid supply unit. Therefore, the retention of the etching liquid EL and the cleaning liquid CL, which are the processing liquid due to the substrate pressing roller 24a, is less likely to occur.
  • the substrate pressing roller 24a is opposite to the processing surface abutting portion 27 in which the substrate pressing roller 24a contacts the processing surface MGa of the mother glass substrate MG and the processing surface MGa of the mother glass substrate MG.
  • a surface to be processed opposite surface abutting portion 28 which is in contact with the surface to be processed opposite surface MGb and sandwiches the mother glass substrate MG with the surface to be processed abutting portion 27. In this way, the substrate pressing roller 24a is brought into contact with the processing surface contact portion 27 that is in contact with the processing surface MGa of the mother glass substrate MG and the processing target opposite surface MGb of the mother glass substrate MG.
  • the conveyance of the mother glass substrate MG by the substrate conveyance portion 23 and the auxiliary substrate conveyance portion 24 becomes more stable and accompanying the conveyance. Fluttering of the mother glass substrate MG that may occur can be more suitably suppressed.
  • the substrate pressing roller 24a is brought into point contact with the mother glass substrate MG. In this way, it is possible to reduce adverse effects on the mother glass substrate MG that may occur as the substrate pressing roller 24a contacts the mother glass substrate MG.
  • the parallel rotation shaft 23b is inclined with respect to the horizontal direction.
  • the mother glass substrate MG transported by the substrate transport roller 23a has a surface to be processed MGa. Tilt relative to the horizontal direction.
  • the etching liquid EL or the cleaning liquid CL as the processing liquid is supplied from the etching liquid discharge section 25 or the cleaning liquid discharge section 26 as the processing liquid supply section to the processing surface MGa inclined with respect to the horizontal direction.
  • the liquid EL and the cleaning liquid CL are efficiently flowed using gravity on the surface to be processed MGa, so that the processing efficiency is improved.
  • the etching liquid EL and the cleaning liquid CL which are processing liquids that flow on the surface to be processed MGa using gravity, may be disturbed by the substrate pressing roller 24a.
  • the transport unit 24 is arranged in such a manner that the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG. Therefore, the flow of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is hardly hindered by the substrate pressing roller 24a, so that the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids due to the substrate pressing roller 24a, is difficult to occur. It has become.
  • the substrate transport unit 23 moves the substrate transport roller 23a forward and backward while at least the etching liquid EL and the cleaning liquid CL as the processing liquid are supplied by the etching liquid discharge unit 25 and the cleaning liquid discharge unit 26 as the processing liquid supply unit.
  • the mother glass substrate MG is reciprocally conveyed by being repeatedly rotated in the direction. In this case, compared to the case where the processing is performed while the mother glass substrate MG is transported by rotating the substrate transport roller only in the positive direction, it relates to the condition setting such as the processing time of the mother glass substrate MG. The degree of freedom is high.
  • the substrate transport unit 123 has a configuration in which the parallel rotation shafts 123b are arranged in a posture parallel to the horizontal direction.
  • the plurality of substrate transport rollers 123a supported by the parallel rotating shaft 123b have a constant height in the Z-axis direction regardless of the position in the Y-axis direction.
  • the mother glass substrate MG transported by the substrate transport section 123 having such a configuration has its plate surfaces (surface to be processed MGa and surface to be processed MGb) parallel to the horizontal direction following the axial direction of the parallel rotation shaft 123b. ing.
  • the plurality of etching liquid discharge portions 125 (cleaning liquid discharge portions (not shown)) arranged along the Y-axis direction have a constant installation height in the Z-axis direction following the axial direction of the parallel rotation shaft 123b.
  • the axis direction of the intersecting rotation shaft 124b matches the normal direction of the plate surface of the mother glass substrate MG and also matches the vertical direction (Z-axis direction). Even in such a configuration, the end of the mother glass substrate MG in the Y-axis direction is pressed by the substrate pressing roller 124a configuring the auxiliary substrate transfer unit 124, so that the mother glass substrate MG fluttering that may occur during transfer is performed.
  • the substrate pressing roller 124a In addition to being able to suppress the flow of the processing liquid (etching liquid EL or the like) supplied onto the processing surface MGa of the mother glass substrate MG, it is difficult for the substrate pressing roller 124a to obstruct the mother glass.
  • the processing with the processing liquid is made uniform in the surface of the processing surface MGa of the substrate MG.
  • the auxiliary substrate transport unit 30 has a substrate pressing roller 30a for pressing the mother glass substrate MG from the processing surface MGa side, and a substrate pressing roller 30a that is rotatably supported.
  • the rotating shaft 30b whose axis is parallel to the surface to be processed MGa is provided.
  • the substrate pressing roller 30a is arranged in such a manner that the entire area thereof overlaps with the mother glass substrate MG and is placed on the processing surface MGa, and holds the mother glass substrate MG from the side opposite to the substrate transport unit 31 side.
  • the configuration of the substrate transport unit 31 is the same as that of the substrate transport unit 23 described in the first embodiment.
  • the substrate pressing roller 30a has a plurality of openings 30a1 between the rotation shaft 30b and the outer peripheral end.
  • the openings 30a1 have a substantially fan shape in plan view, and four openings 30a1 are arranged at equal intervals around the axis of the rotating shaft 30b.
  • the substrate pressing roller 30a has four spoke portions 30a2 that partition the four openings 30a1 and connect the bearing portion of the rotating shaft 30b and the outer peripheral end.
  • the axes may be arranged so as to intersect at an angle other than 90 ° without being orthogonal to the plate surface of the mother glass substrate.
  • the auxiliary substrate transport unit is disposed only on one end side in the Y-axis direction (lower side in the vertical direction) with respect to the mother glass substrate. May be arranged only on the other end side in the Y-axis direction (upper side in the vertical direction) with respect to the mother glass substrate. Furthermore, the auxiliary substrate transport unit may be arranged so as to sandwich the mother glass substrate from both sides in the Y-axis direction.
  • the outer surface of the substrate pressing roller constituting the auxiliary substrate transport unit is inclined with respect to the axial direction of the intersecting rotation axis, and is also inclined with respect to the surface to be processed of the mother glass substrate.
  • the outer surface of the substrate pressing roller configuring the auxiliary substrate transport unit may be configured to be orthogonal to the axial direction of the intersecting rotation axis and parallel to the surface to be processed of the mother glass substrate.
  • the substrate pressing roller that constitutes the auxiliary substrate transport unit has the processing opposite surface contact portion that contacts the processing target opposite surface of the mother glass substrate has been described.
  • the pressing roller may have a configuration that does not have the opposite surface contact portion to be processed.
  • the cleaning liquid used in the cleaning tank is pure water or ultrapure water is shown, but the cleaning liquid may be other than pure water or ultrapure water.
  • the wet etching apparatus for performing the wet etching process on the mother glass substrate of the glass substrate constituting the TN type or VA type liquid crystal panel has been described.
  • an IPS type or FFS type liquid crystal panel is used. It may be a wet etching apparatus for performing a wet etching process on the mother glass substrate of the glass substrate constituting the glass substrate.
  • the wet etching apparatus for performing the wet etching process on the mother glass substrate of the glass substrate constituting the liquid crystal panel has been shown. However, the wet etching process is performed on the substrate constituting the display panel other than the liquid crystal panel. It may be a wet etching apparatus.
  • the display panel other than the liquid crystal panel examples include an organic EL panel, PDP, EPD (electrophoretic display panel, MEMS (Micro Electro Mechanical Systems) display panel, and the like.
  • the wet etching apparatus that performs wet etching processing on the mother glass substrate is exemplified as the substrate processing apparatus.
  • the substrate processing apparatus other than the wet etching apparatus for example, a developing apparatus or a cleaning apparatus used in the developing process). Etc.).

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Abstract

A wet etching device is provided with: a substrate transfer unit which includes an etching liquid ejection unit or a cleaning liquid ejection unit for supplying an etching liquid or a cleaning liquid to a surface to be processed of a mother glass substrate, a parallel rotary shaft of which the axis direction is parallel with the surface to be processed, and a substrate transfer roller which is journaled to the parallel rotary shaft and supports the mother glass substrate in such a manner as to be transferrable from the opposite side to the side of the surface to be processed, the substrate transfer unit transferring the mother glass substrate; and an auxiliary substrate transfer unit which includes an intersecting rotary shaft of which the axis direction intersects the surface to be processed, and a substrate pressing roller which is journaled to the intersecting rotary shaft and presses the mother glass substrate from the side of the surface to be processed in a transferrable state. The auxiliary substrate transfer unit is disposed with a part thereof not overlapping the mother glass substrate, and assists the transfer of the mother glass substrate.

Description

基板処理装置Substrate processing equipment
　本発明は、基板処理装置に関する。 The present invention relates to a substrate processing apparatus.
　従来、液晶表示装置の主要構成部品である液晶パネルを製造する際には、ガラス製の基板の表面にフォトリソグラフィ法により導電膜や絶縁膜を成膜してパターニングしている。基板上に導電膜や絶縁膜を成膜するに際しては、例えば下記特許文献１に記載された基板処理装置が用いられる。この基板処理装置は、搬送軸に設けられ基板の幅方向両端部の下面を支持する端部支持ローラと、搬送軸の基板幅方向両端部を除く部分の下面を支持する複数の搬送ローラと、上載せローラ軸において一対の端部支持ローラと対向する部分に設けられ、端部支持ローラによって幅方向の端部下面が支持された基板の幅方向の端部上面を押圧する一対の上載せローラと、を有し、上載せローラには切り欠き部が形成されている。 Conventionally, when manufacturing a liquid crystal panel which is a main component of a liquid crystal display device, a conductive film or an insulating film is formed on the surface of a glass substrate by a photolithography method and patterned. When forming a conductive film or an insulating film on a substrate, for example, a substrate processing apparatus described in Patent Document 1 below is used. The substrate processing apparatus includes an end support roller that is provided on the transport shaft and supports the lower surfaces of both ends of the substrate in the width direction, and a plurality of transport rollers that support the lower surface of a portion excluding both ends of the transport shaft in the substrate width direction, A pair of upper rollers, which are provided on a portion of the upper roller shaft facing the pair of end support rollers and press the upper end surface in the width direction of the substrate with the lower end surface in the width direction supported by the end support rollers. And a notch is formed in the upper roller.
特開２０１５－２３０９３６号公報Japanese Patent Laying-Open No. 2015-230936
（発明が解決しようとする課題）
　上記した特許文献１に記載された基板処理装置では、上載せローラを軸支する回転軸が基板の被処理面に並行するとともに、上載せローラの全域が基板と重畳する配置とされる。このような配置では、上載せローラが基板の被処理面から処理液を供給するノズル側に突き出る寸法は、上載せローラの直径と等しくなっている。このため、上載せローラが基板上に供給される処理液の流動を妨げ易く、基板のうち上載せローラ近傍において処理液の滞留が生じてしまい、結果として処理ムラが生じ易くなっていた。 (Problems to be solved by the invention)
In the substrate processing apparatus described in Patent Document 1 described above, the rotation shaft that pivotally supports the upper roller is parallel to the surface to be processed of the substrate, and the entire area of the upper roller overlaps the substrate. In such an arrangement, the dimension of the upper roller protruding from the surface to be processed of the substrate toward the nozzle supplying the processing liquid is equal to the diameter of the upper roller. For this reason, the upper roller easily disturbs the flow of the processing liquid supplied onto the substrate, and the processing liquid stays in the vicinity of the upper roller of the substrate, and as a result, processing unevenness is likely to occur.
　本発明は上記のような事情に基づいて完成されたものであって、処理ムラの発生を抑制することを目的とする。 The present invention has been completed based on the above circumstances, and an object thereof is to suppress the occurrence of processing unevenness.
（課題を解決するための手段）
　本発明の基板処理装置は、基板の被処理面に処理液を供給する処理液供給部と、軸線方向が前記被処理面に並行する並行回転軸と、前記並行回転軸により回転可能に軸支されて前記基板を前記被処理面側とは反対側から搬送可能な状態で支持する基板搬送ローラと、を有していて前記基板を搬送する基板搬送部と、軸線方向が前記被処理面と交差する交差回転軸と、前記交差回転軸によって回転可能に軸支されて前記基板を前記被処理面側から搬送可能な状態で押さえる基板押さえローラと、を有していて一部が前記基板に対して非重畳となる形で配されて前記基板の搬送を補助する補助基板搬送部と、を備える。 (Means for solving the problem)
A substrate processing apparatus of the present invention includes a processing liquid supply unit that supplies a processing liquid to a surface to be processed of a substrate, a parallel rotation axis whose axis is parallel to the processing surface, and a shaft that is rotatable by the parallel rotation shaft. A substrate transport roller that supports the substrate in a state in which the substrate can be transported from the side opposite to the surface to be processed, and a substrate transport unit that transports the substrate; and an axial direction of the substrate transport roller A cross-rotating shaft that intersects and a substrate pressing roller that is rotatably supported by the cross-rotating shaft and presses the substrate in a state where the substrate can be conveyed from the surface to be processed. And an auxiliary substrate transfer unit that is arranged in a non-overlapping manner to assist the transfer of the substrate.
　このようにすれば、基板搬送部は、基板を被処理面側とは反対側から支持する基板搬送ローラが、軸線方向が被処理面に並行する並行回転軸の軸線周りに回転されることで基板を搬送しており、搬送される基板の被処理面に処理液供給部から処理液が供給されることで被処理面の処理がなされる。補助基板搬送部は、基板を被処理面側から押さえる基板押さえローラが、基板搬送ローラの回転に同期して交差回転軸の軸線周りに回転されることで、搬送に伴って生じ得る基板のばたつきを抑制する形で基板の搬送を補助する。そして、補助基板搬送部は、基板押さえローラを軸支する交差回転軸の軸線方向が被処理面と交差していて一部が基板に対して非重畳となる形で配されているから、基板押さえローラが基板の被処理面から処理液供給部側に突き出る寸法は、基板押さえローラの直径より小さくなっている。これにより、基板押さえローラによって基板の被処理面に供給される処理液の流動が妨げられ難くなるので、基板押さえローラに起因する処理液の滞留が生じ難くなる。従って、基板の被処理面の面内において処理液による処理が均一化される。 In this way, the substrate transport unit is configured such that the substrate transport roller that supports the substrate from the side opposite to the surface to be processed is rotated around the axis of the parallel rotation axis whose axis is parallel to the surface to be processed. The substrate is transported, and the processing surface is processed by supplying the processing liquid to the processing surface of the transported substrate from the processing liquid supply unit. Auxiliary substrate transfer unit is a substrate holding roller that holds the substrate from the surface to be processed and rotates around the axis of the intersecting rotation axis in synchronization with the rotation of the substrate transfer roller. Assists the transfer of the substrate in a form that suppresses The auxiliary substrate transport unit is arranged in such a manner that the axial direction of the intersecting rotation shaft that pivotally supports the substrate pressing roller intersects the surface to be processed and a part thereof does not overlap the substrate. The dimension of the pressing roller protruding from the processing surface of the substrate toward the processing liquid supply unit is smaller than the diameter of the substrate pressing roller. As a result, the flow of the processing liquid supplied to the processing surface of the substrate by the substrate pressing roller is less likely to be hindered, so that the retention of the processing liquid due to the substrate pressing roller is less likely to occur. Therefore, the processing with the processing liquid is made uniform within the surface of the substrate to be processed.
（発明の効果）
　本発明によれば、処理ムラの発生を抑制することができる。 (The invention's effect)
According to the present invention, the occurrence of processing unevenness can be suppressed.
本発明の実施形態１に係る液晶パネルの断面構成を示す概略断面図1 is a schematic cross-sectional view showing a cross-sectional configuration of a liquid crystal panel according to Embodiment 1 of the present invention. マザーガラス基板がウェットエッチング処理槽に搬入された状態を示す基板処理装置の側断面図Side sectional view of the substrate processing apparatus showing a state in which the mother glass substrate is carried into the wet etching processing tank マザーガラス基板がウェットエッチング処理槽に搬入された状態を示す基板処理装置の平断面図Plan sectional view of the substrate processing apparatus showing a state in which the mother glass substrate is carried into the wet etching processing tank マザーガラス基板がウェットエッチング処理槽に搬入された状態を示す基板処理装置の正断面図Front sectional view of the substrate processing apparatus showing a state in which the mother glass substrate is carried into the wet etching processing tank マザーガラス基板が洗浄槽に搬入された状態を示す基板処理装置の断面図Sectional drawing of the substrate processing apparatus which shows the state by which the mother glass substrate was carried in the washing tank 本発明の実施形態２に係るマザーガラス基板がウェットエッチング処理槽に搬入された状態を示す基板処理装置の正断面図Front sectional view of a substrate processing apparatus showing a state where a mother glass substrate according to Embodiment 2 of the present invention is carried into a wet etching processing tank 参考例に係るマザーガラス基板がウェットエッチング処理槽に搬入された状態を示す基板処理装置の正断面図Front sectional view of a substrate processing apparatus showing a state in which a mother glass substrate according to a reference example is carried into a wet etching tank 基板押さえローラの正面図Front view of substrate pressing roller
　＜実施形態１＞
　本発明の実施形態１を図１から図５によって説明する。本実施形態では、液晶表示装置を構成する液晶パネル（表示パネル）１１における各基板１１ａ，１１ｂの製造に用いられるウェットエッチング装置（基板処理装置）２０について例示する。なお、各図面の一部にはＸ軸、Ｙ軸及びＺ軸を示しており、各軸方向が各図面で示した方向となるように描かれている。このうち、Ｚ軸方向は、鉛直方向と一致し、Ｘ軸方向及びＹ軸方向は、水平方向と一致している。また、特に断りがない限りは、上下の記載については鉛直方向（図２，図４及び図５）を基準とする。 <Embodiment 1>
A first embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a wet etching apparatus (substrate processing apparatus) 20 used for manufacturing the respective substrates 11a and 11b in the liquid crystal panel (display panel) 11 constituting the liquid crystal display apparatus is illustrated. In addition, a part of each drawing shows an X axis, a Y axis, and a Z axis, and each axis direction is drawn to be a direction shown in each drawing. Among these, the Z-axis direction coincides with the vertical direction, and the X-axis direction and the Y-axis direction coincide with the horizontal direction. In addition, unless otherwise specified, the upper and lower descriptions are based on the vertical direction (FIGS. 2, 4 and 5).
　まず、液晶パネル１１の構成について説明する。液晶パネル１１は、図１に示すように、一対の基板１１ａ，１１ｂ間に、電界印加に伴って光学特性が変化する物質である液晶材料を含む液晶層１１ｃを封入してなる。液晶パネル１１を構成する両基板１１ａ，１１ｂのうち、表側（光出射側）に配されるものがＣＦ基板（対向基板）１１ａとされ、裏側（バックライト装置側）に配されるものがアレイ基板（アクティブマトリクス基板、ＴＦＴ基板）１１ｂとされる。ＣＦ基板１１ａ及びアレイ基板１１ｂは、いずれもほぼ透明で優れた透光性を有するガラス基板ＧＳの内面側に所定の膜（構造物）を既知のフォトリソグラフィ法により順次に積層形成してなるものとされる。なお、両基板１１ａ，１１ｂの外面側には、表裏一対の偏光板１１ｄ，１１ｅがそれぞれ貼り付けられている。 First, the configuration of the liquid crystal panel 11 will be described. As shown in FIG. 1, the liquid crystal panel 11 is formed by enclosing a liquid crystal layer 11c containing a liquid crystal material, which is a substance whose optical characteristics change with application of an electric field, between a pair of substrates 11a and 11b. Of the two substrates 11a and 11b constituting the liquid crystal panel 11, the one arranged on the front side (light emitting side) is the CF substrate (counter substrate) 11a, and the one arranged on the back side (backlight device side) is the array. A substrate (active matrix substrate, TFT substrate) 11b is used. Each of the CF substrate 11a and the array substrate 11b is formed by sequentially laminating a predetermined film (structure) on the inner surface side of a glass substrate GS that is almost transparent and has excellent translucency by a known photolithography method. It is said. A pair of front and back polarizing plates 11d and 11e are attached to the outer surface sides of both substrates 11a and 11b, respectively.
　アレイ基板１１ｂの内面側（液晶層１１ｃ側、ＣＦ基板１１ａとの対向面側）には、図１に示すように、スイッチング素子であるＴＦＴ（Thin Film Transistor：薄膜トランジスタ）１１ｆ及び画素電極１１ｇが多数個ずつマトリクス状に並んで設けられている。これらＴＦＴ１１ｆ及び画素電極１１ｇの周りには、格子状をなしていて金属膜からなるゲート配線及びソース配線（いずれも図示せず）が配設されている。画素電極１１ｇは、例えばＩＴＯ（Indium Tin Oxide）などの透明電極材料からなる。この画素電極１１ｇには、ＴＦＴ１１ｆによって所定の電位が充電されるようになっている。また、アレイ基板１１ｂの内面側には、各種絶縁膜が設けられている。 On the inner surface side of the array substrate 11b (the liquid crystal layer 11c side and the surface facing the CF substrate 11a), as shown in FIG. 1, there are many TFTs (Thin Film Transistors) 11f and pixel electrodes 11g which are switching elements. They are provided one by one in a matrix. Around the TFT 11f and the pixel electrode 11g, a gate wiring and a source wiring (both not shown) made of a metal film in a lattice shape are arranged. The pixel electrode 11g is made of a transparent electrode material such as ITO (Indium Tin Oxide). The pixel electrode 11g is charged with a predetermined potential by the TFT 11f. Various insulating films are provided on the inner surface side of the array substrate 11b.
　ＣＦ基板１１ａの内面側（液晶層１１ｃ側、アレイ基板１１ｂとの対向面側）には、図１に示すように、赤色（Ｒ），緑色（Ｇ），青色（Ｂ）を呈する３色のカラーフィルタ（着色部）１１ｈと、光を遮る遮光部（ブラックマトリクス）１１ｉと、が設けられている。このカラーフィルタ１１ｈは、アレイ基板１１ｂ側の各画素電極１１ｇと平面に視て重畳する配置とされ、各画素電極１１ｇと共にＲ，Ｇ，Ｂの３色の画素部を構成している。遮光部１１ｉは、アレイ基板１１ｂ側のゲート配線及びソース配線と平面に視て重畳する配置とされ、隣り合う画素部（画素電極１１ｇ）の間を仕切っている。カラーフィルタ１１ｈの上層側には、絶縁性材料からなるオーバーコート膜（絶縁膜）１１ｊが設けられている。オーバーコート膜１１ｊの表面には、対向電極１１ｋが内側に重なって設けられている。対向電極１１ｋは、ＣＦ基板１１ａの内面におけるほぼ全域にわたってベタ状に形成されている。対向電極１１ｋは、画素電極１１ｇと同様の透明電極材料からなり、常に一定の基準電位に保たれている。従って、各ＴＦＴ１１ｆが駆動されるのに伴って各ＴＦＴ１１ｆに接続された各画素電極１１ｇが充電されると、各画素電極１１ｇとの間には電位差が生じ得る。そして、対向電極１１ｋと各画素電極１１ｇとの間に生じる電位差に基づいて液晶層１１ｃに含まれる液晶分子の配向状態が変化し、それに伴って透過光の偏光状態が変化し、もって液晶パネル１１の透過光量が各画素毎に個別に制御されるとともに所定のカラー画像が表示されるようになっている。なお、両基板１１ａ，１１ｂにおける最内面には、液晶層１１ｃに臨む形で配されて液晶分子を配向させる配向膜１１ｌ，１１ｍがそれぞれ設けられている。 As shown in FIG. 1, three colors of red (R), green (G), and blue (B) are provided on the inner surface side of the CF substrate 11a (the liquid crystal layer 11c side and the surface facing the array substrate 11b). A color filter (colored portion) 11h and a light blocking portion (black matrix) 11i that blocks light are provided. The color filter 11h is arranged so as to overlap with each pixel electrode 11g on the array substrate 11b in a plan view, and constitutes a pixel portion of three colors of R, G, and B together with each pixel electrode 11g. The light-shielding portion 11i is arranged so as to overlap with the gate wiring and source wiring on the array substrate 11b side in a plan view, and partitions between adjacent pixel portions (pixel electrodes 11g). An overcoat film (insulating film) 11j made of an insulating material is provided on the upper layer side of the color filter 11h. On the surface of the overcoat film 11j, a counter electrode 11k is provided so as to overlap the inside. The counter electrode 11k is formed in a solid shape over almost the entire area of the inner surface of the CF substrate 11a. The counter electrode 11k is made of the same transparent electrode material as the pixel electrode 11g, and is always kept at a constant reference potential. Accordingly, when each pixel electrode 11g connected to each TFT 11f is charged as each TFT 11f is driven, a potential difference may be generated between each pixel electrode 11g. The alignment state of the liquid crystal molecules contained in the liquid crystal layer 11c changes based on the potential difference generated between the counter electrode 11k and each pixel electrode 11g, and the polarization state of the transmitted light changes accordingly. The amount of transmitted light is individually controlled for each pixel and a predetermined color image is displayed. The innermost surfaces of both the substrates 11a and 11b are respectively provided with alignment films 11l and 11m that are arranged so as to face the liquid crystal layer 11c and align liquid crystal molecules.
　上記のような構成の各基板１１ａ，１１ｂは、既知のフォトリソグラフィ法を用いてガラス基板ＧＳの板面上に各種電極や各種配線などを構成する各導電膜（金属膜及び透明電極膜を含む）や各絶縁膜などが繰り返し成膜及びパターニングされることで製造されている。具体的には、各膜がガラス基板ＧＳ上に成膜される成膜工程と、各膜上に感光性材料からなるフォトレジストが塗布されてレジスト膜が形成されるレジスト形成工程と、レジスト膜が各膜のパターンに応じたフォトマスクを介して露光される露光工程と、露光されたレジスト膜を現像する現像工程と、各膜のうちレジスト膜によって覆われない部分を除去するエッチング工程と、レジスト膜を剥離するレジスト剥離工程と、を経て各膜の成膜及びパターニングが行われる。このうちのエッチング工程では、続いて説明するウェットエッチング装置２０が用いられている。なお、本実施形態では、複数のガラス基板（単位基板）ＧＳが板面内に並んで配されてなるマザーガラス基板（基板、ガラス基板母材）ＭＧをウェットエッチング装置２０にて処理している。 Each of the substrates 11a and 11b having the above-described configuration includes each conductive film (including a metal film and a transparent electrode film) forming various electrodes and various wirings on the plate surface of the glass substrate GS using a known photolithography method. ) And each insulating film are repeatedly formed and patterned. Specifically, a film forming process in which each film is formed on the glass substrate GS, a resist forming process in which a photoresist made of a photosensitive material is applied on each film to form a resist film, and a resist film Are exposed through a photomask according to the pattern of each film, a developing process for developing the exposed resist film, an etching process for removing a portion of each film that is not covered by the resist film, Each film is formed and patterned through a resist stripping process for stripping the resist film. In the etching process, a wet etching apparatus 20 described below is used. In this embodiment, a mother glass substrate (substrate, glass substrate base material) MG in which a plurality of glass substrates (unit substrates) GS are arranged side by side in the plate surface is processed by the wet etching apparatus 20. .
　ウェットエッチング装置２０は、図２に示すように、マザーガラス基板ＭＧにウェットエッチング処理を行うウェットエッチング処理槽（処理槽）２１と、ウェットエッチング処理槽２１の下流側（図２の右側）に配されて処理済みのマザーガラス基板ＭＧを洗浄する洗浄槽（処理槽）２２と、ウェットエッチング処理槽２１及び洗浄槽２２の順でマザーガラス基板ＭＧを搬送する基板搬送部２３と、基板搬送部２３によるマザーガラス基板ＭＧの搬送を補助する補助基板搬送部２４と、を少なくとも備える。ウェットエッチング処理槽２１及び洗浄槽２２は、上流側（図２の左側）から順に互いに隣接する形で配されるとともに、基板搬送部２３及び補助基板搬送部２４によって搬送されるマザーガラス基板ＭＧの搬入及び搬出を行うための搬入口２１ａ，２２ａ及び搬出口２１ｂ，２２ｂをそれぞれ有している。ウェットエッチング処理槽２１の搬出口２１ｂと洗浄槽２２の搬入口２２ａとが互いに隣り合って連通している。基板搬送部２３及び補助基板搬送部２４によって搬送されるマザーガラス基板ＭＧは、エッチングの対象となる膜やレジスト膜が形成された被処理面ＭＧａが鉛直方向（被処理面ＭＧａの法線方向）の上側（図２の上側）を向いた姿勢とされる。また、基板搬送部２３及び補助基板搬送部２４によるマザーガラス基板ＭＧの搬送方向は、図２から図５に示されるＸ軸方向と一致しており、搬送方向及び鉛直方向と直交する幅方向は、図２から図５に示されるＹ軸方向と一致している。 As shown in FIG. 2, the wet etching apparatus 20 is arranged on a wet etching treatment tank (treatment tank) 21 that performs wet etching on the mother glass substrate MG, and on the downstream side (right side in FIG. 2) of the wet etching treatment tank 21. Then, a cleaning tank (processing tank) 22 for cleaning the processed mother glass substrate MG, a substrate transfer part 23 for transferring the mother glass substrate MG in the order of the wet etching process tank 21 and the cleaning tank 22, and a substrate transfer part 23 And an auxiliary substrate transport unit 24 that assists in transporting the mother glass substrate MG. The wet etching treatment tank 21 and the cleaning tank 22 are arranged adjacent to each other in order from the upstream side (left side in FIG. 2), and the mother glass substrate MG conveyed by the substrate conveyance unit 23 and the auxiliary substrate conveyance unit 24. It has carry-in entrances 21a and 22a and carry-out exits 21b and 22b for carrying in and carrying out, respectively. A carry-out port 21b of the wet etching treatment tank 21 and a carry-in port 22a of the cleaning tank 22 are adjacent to each other and communicate with each other. In the mother glass substrate MG transported by the substrate transport unit 23 and the auxiliary substrate transport unit 24, the surface to be processed MGa on which a film to be etched or a resist film is formed is in the vertical direction (normal direction of the surface to be processed MGa). The posture is directed to the upper side (upper side in FIG. 2). Moreover, the conveyance direction of the mother glass substrate MG by the substrate conveyance unit 23 and the auxiliary substrate conveyance unit 24 coincides with the X-axis direction shown in FIGS. 2 to 5, and the conveyance direction and the width direction orthogonal to the vertical direction are These coincide with the Y-axis direction shown in FIGS.
　ウェットエッチング処理槽２１は、図２に示すように、マザーガラス基板ＭＧの被処理面ＭＧａにエッチング液（処理液、エッチャント）ＥＬを供給することで、マザーガラス基板ＭＧのウェットエッチング処理を行う。ウェットエッチング処理で用いられるエッチング液ＥＬは、エッチングの対象となる膜に対する腐食性を有しているので、膜のうちレジスト膜により覆われずに露出した部分を腐食させて除去することが可能とされる。ウェットエッチング処理槽２１は、マザーガラス基板ＭＧの被処理面ＭＧａにエッチング液ＥＬを吐出するエッチング液吐出部（処理液供給部、処理液吐出部）２５を有する。エッチング液吐出部２５は、マザーガラス基板ＭＧに対して鉛直方向（Ｚ軸方向）について上側（被処理面ＭＧａ側、基板搬送部２３側とは反対側）に離間して位置するとともに、ウェットエッチング処理槽２１における搬入口２１ａ付近から下流側（搬出口２１ｂ側）に向けて搬送方向（Ｘ軸方向）に沿って間隔を空けて複数（本実施形態では５個）が並んで配されている。また、エッチング液吐出部２５は、図４に示すように、幅方向（Ｙ軸方向）について複数（図４では３個）が並んで配されている。 As shown in FIG. 2, the wet etching treatment tank 21 performs a wet etching process on the mother glass substrate MG by supplying an etching liquid (treatment liquid, etchant) EL to the surface MGa to be processed of the mother glass substrate MG. Since the etchant EL used in the wet etching process has corrosiveness to the film to be etched, it is possible to corrode and remove the exposed part of the film that is not covered by the resist film. Is done. The wet etching processing tank 21 includes an etching liquid discharge unit (processing liquid supply unit, processing liquid discharge unit) 25 that discharges the etching liquid EL onto the surface to be processed MGa of the mother glass substrate MG. The etchant discharge unit 25 is positioned away from the upper side (the processed surface MGa side and the side opposite to the substrate transport unit 23 side) in the vertical direction (Z-axis direction) with respect to the mother glass substrate MG, and is wet-etched. A plurality (five in this embodiment) are arranged side by side along the transport direction (X-axis direction) from the vicinity of the transport inlet 21a in the processing tank 21 toward the downstream side (the transport outlet 21b side). . Further, as shown in FIG. 4, a plurality (three in FIG. 4) of the etchant discharge portions 25 are arranged side by side in the width direction (Y-axis direction).
　洗浄槽２２は、図５に示すように、ウェットエッチング処理槽２１を経たマザーガラス基板ＭＧの被処理面ＭＧａに洗浄液ＣＬを供給し、被処理面ＭＧａを洗浄する洗浄処理を行う。洗浄液ＣＬは、例えば純水または超純水からなる。洗浄槽２２は、マザーガラス基板ＭＧの被処理面ＭＧａに洗浄液ＣＬを吐出する洗浄液吐出部（処理液供給部、処理液吐出部）２６を有する。洗浄液吐出部２６は、マザーガラス基板ＭＧに対して鉛直方向（Ｚ軸方向）について上側（被処理面ＭＧａ側）に離間して位置するとともに、洗浄槽２２における搬入口２２ａ付近から下流側（搬出口２２ｂ側）に向けて搬送方向（Ｘ軸方向）に沿って間隔を空けて複数（本実施形態では５個）が並んで配されている。また、洗浄液吐出部２６は、図示は省略するが、エッチング液吐出部２５と同様に、幅方向（Ｙ軸方向）について複数が並んで配されている。 As shown in FIG. 5, the cleaning tank 22 supplies a cleaning liquid CL to the target surface MGa of the mother glass substrate MG that has passed through the wet etching processing tank 21 to perform a cleaning process for cleaning the target surface MGa. The cleaning liquid CL is made of pure water or ultrapure water, for example. The cleaning tank 22 has a cleaning liquid discharge section (processing liquid supply section, processing liquid discharge section) 26 that discharges the cleaning liquid CL onto the surface to be processed MGa of the mother glass substrate MG. The cleaning liquid discharge unit 26 is located apart from the upper side (processed surface MGa side) in the vertical direction (Z-axis direction) with respect to the mother glass substrate MG, and is located downstream from the vicinity of the carry-in port 22a in the cleaning tank 22 (loading). A plurality (five in this embodiment) are arranged side by side along the transport direction (X-axis direction) toward the outlet 22b side. In addition, although not shown, a plurality of the cleaning liquid discharge units 26 are arranged in the width direction (Y-axis direction) in the same manner as the etching liquid discharge unit 25.
　基板搬送部２３は、図２に示すように、マザーガラス基板ＭＧを鉛直方向について下側（被処理反対面ＭＧｂ側、被処理面ＭＧａ側とは反対側）から支持しつつ搬送する基板搬送ローラ２３ａと、軸線方向がマザーガラス基板ＭＧの板面（被処理面ＭＧａ及び被処理反対面ＭＧｂ）に並行していて基板搬送ローラ２３ａを回転可能に軸支する並行回転軸２３ｂと、を有する。基板搬送ローラ２３ａは、マザーガラス基板ＭＧに対して鉛直方向について下側に位置していて被処理反対面ＭＧｂに接しつつ並行回転軸２３ｂの軸線周りに回転されることで、マザーガラス基板ＭＧをＸ軸方向に沿って搬送する。基板搬送ローラ２３ａは、図３に示すように、並行回転軸２３ｂに対してその軸線方向について間隔を空けて複数が並ぶ形で回転可能に軸支されている。基板搬送ローラ２３ａ及び並行回転軸２３ｂは、ウェットエッチング処理槽２１及び洗浄槽２２の全てに配されており、各槽２１，２２内においてＸ軸方向（搬送方向）に沿って複数ずつが間隔を空けて並んで配されている。並行回転軸２３ｂは、動力源であるモータ（図示せず）に接続されることで、正逆いずれの方向にも回転可能とされる。並行回転軸２３ｂは、モータの駆動がモータコントローラ（図示せず）により制御されることで、並行回転軸２３ｂ及び基板搬送ローラ２３ａの回転方向、並行回転軸２３ｂ及び基板搬送ローラ２３ａの単位時間当たりの回転数、つまり回転速度などが適宜に調整される。そして、基板搬送部２３は、各槽２１，２２においてエッチング液吐出部２５や洗浄液吐出部２６によるエッチング液ＥＬや洗浄液ＣＬの供給が行われる間、基板搬送ローラ２３ａを正逆方向に繰り返し回転させてマザーガラス基板ＭＧを往復搬送（揺動搬送）することが可能とされる。 As shown in FIG. 2, the substrate transport unit 23 transports the mother glass substrate MG while supporting the mother glass substrate MG from below in the vertical direction (on the opposite side MGb to be processed and opposite to the side to be processed MGa). 23a and a parallel rotation shaft 23b whose axial direction is parallel to the plate surface of the mother glass substrate MG (surface to be processed MGa and surface MGb to be processed) and rotatably supports the substrate transport roller 23a. The substrate transport roller 23a is positioned on the lower side in the vertical direction with respect to the mother glass substrate MG and is rotated around the axis of the parallel rotation shaft 23b while being in contact with the opposite surface MGb to be processed. Transport along the X-axis direction. As shown in FIG. 3, the substrate transport roller 23 a is pivotally supported so as to be rotatable in a form in which a plurality are arranged at intervals in the axial direction with respect to the parallel rotation shaft 23 b. The substrate transport roller 23a and the parallel rotating shaft 23b are arranged in all of the wet etching processing tank 21 and the cleaning tank 22, and a plurality of each are spaced along the X-axis direction (transport direction) in each of the tanks 21 and 22. They are arranged side by side. The parallel rotation shaft 23b is connected to a motor (not shown) that is a power source, so that the parallel rotation shaft 23b can rotate in either the forward or reverse direction. The parallel rotation shaft 23b is controlled by a motor controller (not shown) to drive the motor, so that the rotation direction of the parallel rotation shaft 23b and the substrate transport roller 23a, and per unit time of the parallel rotation shaft 23b and the substrate transport roller 23a. The number of rotations, that is, the rotation speed is adjusted as appropriate. Then, the substrate transport unit 23 repeatedly rotates the substrate transport roller 23a in the forward and reverse directions while the etching solution EL and the cleaning solution CL are supplied by the etching solution discharge unit 25 and the cleaning solution discharge unit 26 in the respective tanks 21 and 22. Thus, the mother glass substrate MG can be reciprocated (oscillated).
　並行回転軸２３ｂは、図４に示すように、水平方向に対して傾いた姿勢で配されている。並行回転軸２３ｂは、Ｘ軸方向に対しては傾かず、Ｙ軸方向に対してのみ傾いており、Ｙ軸方向についての一端側（図４の左側）から他端側（図４の右側）に向けて上り勾配となる傾斜を有する。この並行回転軸２３ｂに軸支された複数の基板搬送ローラ２３ａは、Ｙ軸方向についての位置に応じてＺ軸方向についての高さが変化しており、並行回転軸２３ｂにおけるＹ軸方向についての一端側に配されたものが相対的に低い位置に、Ｙ軸方向についての他端側に配されたものが相対的に高い位置に、それぞれ配されている。このような構成の基板搬送部２３によって搬送されるマザーガラス基板ＭＧは、その板面が並行回転軸２３ｂの軸線方向に倣って水平方向に対して傾斜する。従って、各槽２１，２２においてマザーガラス基板ＭＧの被処理面ＭＧａ上に供給されたエッチング液ＥＬや洗浄液ＣＬは、水平方向に対して傾いた被処理面ＭＧａ上を重力によって下向きに効率的に流動することになる。また、各槽２１，２２においてＹ軸方向に沿って複数ずつ並ぶエッチング液吐出部２５及び洗浄液吐出部２６は、並行回転軸２３ｂの傾斜に倣ってＺ軸方向についての設置高さが変化するよう配置されている。 The parallel rotating shaft 23b is arranged in a posture inclined with respect to the horizontal direction as shown in FIG. The parallel rotation shaft 23b is not inclined with respect to the X-axis direction, but is inclined only with respect to the Y-axis direction, and from one end side (left side in FIG. 4) to the other end side (right side in FIG. 4) in the Y-axis direction. It has the inclination which becomes an up-slope toward. The plurality of substrate transport rollers 23a pivotally supported by the parallel rotation shaft 23b change in height in the Z-axis direction according to the position in the Y-axis direction. The one arranged on one end side is arranged at a relatively low position, and the one arranged on the other end side in the Y-axis direction is arranged at a relatively high position. The mother glass substrate MG transported by the substrate transport unit 23 having such a configuration is inclined with respect to the horizontal direction along the axial direction of the parallel rotation shaft 23b. Therefore, the etching liquid EL and the cleaning liquid CL supplied onto the surface to be processed MGa of the mother glass substrate MG in each of the tanks 21 and 22 are efficiently lowered downward by gravity on the surface to be processed MGa inclined with respect to the horizontal direction. It will flow. In addition, the installation height in the Z-axis direction of the etching solution discharge units 25 and the cleaning solution discharge units 26 arranged in a plurality along the Y-axis direction in each of the tanks 21 and 22 changes in accordance with the inclination of the parallel rotation shaft 23b. Has been placed.
　補助基板搬送部２４は、図２から図４に示すように、マザーガラス基板ＭＧをＺ軸方向（鉛直方向）について上側（被処理面ＭＧａ側、被処理反対面ＭＧｂ側とは反対側）から押さえつつ搬送する基板押さえローラ２４ａと、軸線方向がマザーガラス基板ＭＧの板面（被処理面ＭＧａ及び被処理反対面ＭＧｂ）と交差していて基板押さえローラ２４ａを回転可能に軸支する交差回転軸２４ｂと、を有する。補助基板搬送部２４は、各槽２１，２２に２つずつがＸ軸方向について離間した位置に配される形でそれぞれ設けられており、各槽２１，２２において基板搬送部２３によって揺動搬送されるマザーガラス基板ＭＧの搬送を常に補助することが可能とされる。そして、補助基板搬送部２４は、その一部がマザーガラス基板ＭＧに対して非重畳となる形で配される。具体的には、補助基板搬送部２４を構成する基板押さえローラ２４ａのうち、少なくともマザーガラス基板ＭＧを上側から押さえる部分（後述する被処理面当接部２７を含む）がマザーガラス基板ＭＧと平面に視て重畳するものの、それ以外の部分及び交差回転軸２４ｂについては、マザーガラス基板ＭＧとは平面に視て非重畳の配置とされる。基板押さえローラ２４ａは、マザーガラス基板ＭＧに対してＹ軸方向について部分的にオフセットする形で配されており、基板押さえローラ２４ａのうちのマザーガラス基板ＭＧと非重畳となる部分と交差回転軸２４ｂとがマザーガラス基板ＭＧに対してＹ軸方向について外側に隣り合う形で配されている。基板押さえローラ２４ａは、その一部がマザーガラス基板ＭＧにおけるＺ軸方向についての下側端部と重畳していて同下側端部を押さえるものとされる。基板押さえローラ２４ａは、その一部（被処理面当接部２７）がマザーガラス基板ＭＧの被処理面ＭＧａよりＺ軸方向について上側に突き出しているものの、大部分（後述する被処理反対面当接部２８を含む）が被処理面ＭＧａよりＺ軸方向について下側に配されている。つまり、基板押さえローラ２４ａがマザーガラス基板ＭＧの被処理面ＭＧａからＺ軸方向についての上側（エッチング液吐出部２５や洗浄液吐出部２６側）に突き出る寸法は、基板押さえローラ２４ａの直径はおろか厚みよりも小さくなっている。これにより、基板押さえローラ２４ａによってマザーガラス基板ＭＧの被処理面ＭＧａに供給されるエッチング液ＥＬや洗浄液ＣＬの流動が妨げられ難くなるので、基板押さえローラ２４ａに起因するエッチング液ＥＬや洗浄液ＣＬの滞留が生じ難くなる。従って、マザーガラス基板ＭＧの被処理面ＭＧａの面内においてエッチング液ＥＬや洗浄液ＣＬによる処理が均一化される。具体的には、ウェットエッチング処理槽２１では、エッチング液ＥＬによるエッチングレートが均一化され、洗浄槽２２では、洗浄液ＣＬによる洗浄度合いが均一化される。 As shown in FIGS. 2 to 4, the auxiliary substrate transfer unit 24 moves the mother glass substrate MG from the upper side in the Z-axis direction (vertical direction) (on the side opposite to the processing surface MGa side and the processing opposite surface MGb side). The substrate pressing roller 24a that transports while pressing, and the cross rotation in which the axial direction intersects the plate surface of the mother glass substrate MG (surface to be processed MGa and surface to be processed MGb) and the substrate pressing roller 24a is rotatably supported. And a shaft 24b. Auxiliary substrate transport unit 24 is provided in each tank 21, 22 in such a manner that two each are arranged at positions separated from each other in the X-axis direction. It is possible to always assist the conveyance of the mother glass substrate MG. The auxiliary substrate transport unit 24 is arranged so that a part thereof does not overlap with the mother glass substrate MG. Specifically, at least a portion of the substrate pressing roller 24a that constitutes the auxiliary substrate transport unit 24 that presses the mother glass substrate MG from the upper side (including a processed surface contact portion 27 described later) is flat with the mother glass substrate MG. However, the other portions and the intersecting rotation axis 24b are arranged so as not to overlap with the mother glass substrate MG in a plan view. The substrate pressing roller 24a is arranged so as to be partially offset in the Y-axis direction with respect to the mother glass substrate MG, and a portion of the substrate pressing roller 24a that does not overlap with the mother glass substrate MG intersects with the rotation axis. 24b is arranged adjacent to the outside in the Y-axis direction with respect to the mother glass substrate MG. A part of the substrate pressing roller 24a is overlapped with the lower end in the Z-axis direction of the mother glass substrate MG and presses the lower end. Although part of the substrate pressing roller 24a (processed surface contact portion 27) protrudes upward in the Z-axis direction from the process target surface MGa of the mother glass substrate MG, most of the substrate presser roller 24a (the target surface opposite to the process target will be described later). (Including the contact portion 28) is disposed below the surface to be processed MGa in the Z-axis direction. That is, the size of the substrate pressing roller 24a as well as the diameter of the substrate pressing roller 24a is such that the substrate pressing roller 24a protrudes from the surface MGa to be processed of the mother glass substrate MG to the upper side in the Z-axis direction (etching solution discharge unit 25 and cleaning solution discharge unit 26 side). Is smaller than Accordingly, the flow of the etching liquid EL and the cleaning liquid CL supplied to the processing surface MGa of the mother glass substrate MG by the substrate pressing roller 24a is not easily disturbed, so that the etching liquid EL and the cleaning liquid CL caused by the substrate pressing roller 24a can be prevented. Stagnation is less likely to occur. Therefore, the processing with the etching liquid EL and the cleaning liquid CL is made uniform in the surface of the surface to be processed MGa of the mother glass substrate MG. Specifically, in the wet etching treatment tank 21, the etching rate by the etching liquid EL is made uniform, and in the cleaning tank 22, the degree of washing by the cleaning liquid CL is made uniform.
　補助基板搬送部２４を構成する基板押さえローラ２４ａは、図４に示すように、マザーガラス基板ＭＧの被処理面ＭＧａに当接される被処理面当接部２７と、マザーガラス基板ＭＧの被処理反対面ＭＧｂに当接される被処理反対面当接部２８と、を有しており、これら被処理面当接部２７及び被処理反対面当接部２８がマザーガラス基板ＭＧの下側端部に対して重畳配置されている。つまり、基板押さえローラ２４ａは、被処理面当接部２７と被処理反対面当接部２８との間でマザーガラス基板ＭＧを板厚方向（交差回転軸２４ｂの軸線方向）についての両側から挟み込む形で保持しつつ搬送の補助を行う。基板押さえローラ２４ａには、その厚み方向（交差回転軸２４ｂの軸線方向）についての中央位置に、断面形状がＶ字型をなす溝２４ａ１が全周にわたって周設されており、この溝２４ａ１内にマザーガラス基板ＭＧにおける下側端部を入れることが可能とされる。基板押さえローラ２４ａにおける上記した溝２４ａ１の溝縁は、マザーガラス基板ＭＧの板面に対して交差する形で延在している。そして、被処理面当接部２７及び被処理反対面当接部２８は、上記した溝２４ａ１の溝縁を構成しており、それぞれマザーガラス基板ＭＧの下側端部における被処理面ＭＧａ及び被処理反対面ＭＧｂに対して点接触される。このように、基板押さえローラ２４ａは、マザーガラス基板ＭＧの被処理面ＭＧａに当接される被処理面当接部２７と、マザーガラス基板ＭＧの被処理反対面ＭＧｂに当接される被処理反対面当接部２８と、の間でマザーガラス基板ＭＧを挟み込んでいるから、基板搬送部２３及び補助基板搬送部２４によるマザーガラス基板ＭＧの搬送がより安定したものとなり、搬送に伴って生じ得るマザーガラス基板ＭＧのばたつきをより好適に抑制することができる。しかも、基板押さえローラ２４ａにおける被処理面当接部２７及び被処理反対面当接部２８がマザーガラス基板ＭＧと点接触されるので、被処理面当接部２７及び被処理反対面当接部２８がマザーガラス基板ＭＧに接触するのに伴って生じ得るマザーガラス基板ＭＧへの悪影響を軽減することができる。 As shown in FIG. 4, the substrate pressing roller 24a constituting the auxiliary substrate transport unit 24 includes a surface to be processed contact portion 27 that contacts the surface to be processed MGa of the mother glass substrate MG, and a surface to be processed of the mother glass substrate MG. A processing opposite surface contact portion 28 that contacts the processing opposite surface MGb, and the processing surface contact portion 27 and the processing opposite surface contact portion 28 are below the mother glass substrate MG. Overlaid on the end. That is, the substrate pressing roller 24a sandwiches the mother glass substrate MG from both sides in the plate thickness direction (the axial direction of the cross rotation shaft 24b) between the processing surface contact portion 27 and the processing surface opposite surface contact portion 28. Assist with transport while holding in shape. In the substrate pressing roller 24a, a groove 24a1 having a V-shaped cross-section is provided around the entire circumference at the center position in the thickness direction (the axial direction of the cross rotation shaft 24b). It is possible to insert the lower end of the mother glass substrate MG. The groove edge of the above-described groove 24a1 in the substrate pressing roller 24a extends so as to intersect the plate surface of the mother glass substrate MG. And the to-be-processed surface contact part 27 and the to-be-processed surface contact part 28 comprise the groove edge of above-mentioned groove | channel 24a1, respectively, and the to-be-processed surface MGa and to-be-processed in the lower edge part of the mother glass substrate MG are each. Point contact is made with respect to the processing opposite surface MGb. As described above, the substrate pressing roller 24a is subjected to the processing surface contact portion 27 that contacts the processing surface MGa of the mother glass substrate MG and the processing surface that contacts the processing target opposite surface MGb of the mother glass substrate MG. Since the mother glass substrate MG is sandwiched between the opposite surface abutting portion 28, the conveyance of the mother glass substrate MG by the substrate conveyance portion 23 and the auxiliary substrate conveyance portion 24 becomes more stable and occurs with the conveyance. The fluttering of the mother glass substrate MG to be obtained can be more suitably suppressed. In addition, since the processed surface contact portion 27 and the processed opposite surface contact portion 28 of the substrate pressing roller 24a are in point contact with the mother glass substrate MG, the processed surface contact portion 27 and the processed opposite surface contact portion. The adverse effect on the mother glass substrate MG that may occur as 28 comes into contact with the mother glass substrate MG can be reduced.
　基板押さえローラ２４ａは、図４に示すように、マザーガラス基板ＭＧ側とは反対側の外面（面）２４ａ２が、交差回転軸２４ｂの軸線方向に対して傾いている。基板押さえローラ２４ａは、外面２４ａ２が交差回転軸２４ｂ側（中心側）から外周端側に向けて基板押さえローラ２４ａにおける厚み方向の中心に近づくような勾配の傾斜を有する。従って、基板押さえローラ２４ａは、被処理面当接部２７及び被処理反対面当接部２８の厚みが、交差回転軸２４ｂ側（中心側）から外周端側に向けて次第に小さくなっている。つまり、被処理面当接部２７及び被処理反対面当接部２８は、断面形状が先細り状をなしており、外周端での厚みが最小となっている。このような構成によれば、各槽２１，２２においてマザーガラス基板ＭＧの被処理面ＭＧａに供給されたエッチング液ＥＬや洗浄液ＣＬが、補助基板搬送部２４の基板押さえローラ２４ａにおけるマザーガラス基板ＭＧ側とは反対側の外面２４ａ２に達すると、その外面２４ａ２が交差回転軸２４ｂの軸線方向に対して傾いていることで、同外面２４ａ２上での流動性が担保される。これにより、マザーガラス基板ＭＧの被処理面ＭＧａにおいて処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留がより生じ難くなる。しかも、基板押さえローラ２４ａは、外周端での厚みが最小となるから、各槽２１，２２においてマザーガラス基板ＭＧの被処理面ＭＧａに供給されるエッチング液ＥＬや洗浄液ＣＬの流動が基板押さえローラ２４ａの外周端によって妨げられ難いものとなる。これにより、マザーガラス基板ＭＧの被処理面ＭＧａにおいて処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留がより生じ難くなる。 As shown in FIG. 4, the outer surface (surface) 24a2 opposite to the mother glass substrate MG side of the substrate pressing roller 24a is inclined with respect to the axial direction of the cross rotation shaft 24b. The substrate pressing roller 24a has a slope such that the outer surface 24a2 approaches the center in the thickness direction of the substrate pressing roller 24a from the cross rotation shaft 24b side (center side) toward the outer peripheral end side. Accordingly, in the substrate pressing roller 24a, the thicknesses of the processing surface contact portion 27 and the processing opposite surface contact portion 28 are gradually decreased from the cross rotation shaft 24b side (center side) toward the outer peripheral end side. That is, the surface contact portion 27 to be processed and the surface contact portion 28 to be processed have a tapered cross-sectional shape and have a minimum thickness at the outer peripheral end. According to such a configuration, the etching liquid EL and the cleaning liquid CL supplied to the target surface MGa of the mother glass substrate MG in each of the tanks 21 and 22 are the mother glass substrate MG in the substrate pressing roller 24a of the auxiliary substrate transport unit 24. When the outer surface 24a2 on the opposite side to the side is reached, the outer surface 24a2 is inclined with respect to the axial direction of the intersecting rotation shaft 24b, thereby ensuring fluidity on the outer surface 24a2. Thereby, the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG. In addition, since the substrate pressing roller 24a has a minimum thickness at the outer peripheral end, the flow of the etching liquid EL and the cleaning liquid CL supplied to the surface to be processed MGa of the mother glass substrate MG in each of the tanks 21 and 22 is the substrate pressing roller. It becomes difficult to be disturbed by the outer peripheral edge of 24a. Thereby, the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
　交差回転軸２４ｂは、図４に示すように、その軸線方向がマザーガラス基板ＭＧの被処理面ＭＧａの法線方向に並行している。交差回転軸２４ｂの軸線方向は、鉛直方向に対して傾斜しており、その傾斜角度は、基板搬送部２３を構成する並行回転軸２３ｂの軸線方向が水平方向に対してなす傾斜角度とほぼ等しくなっている。つまり、交差回転軸２４ｂの軸線方向は、基板搬送部２３を構成する並行回転軸２３ｂの軸線方向と直交する関係にある。このようにすれば、基板押さえローラ２４ａがマザーガラス基板ＭＧの被処理面ＭＧａから処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６側に突き出る寸法が最小化されるので、基板押さえローラ２４ａに起因する処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留がより生じ難くなる。 As shown in FIG. 4, the axis of rotation of the intersecting rotary shaft 24 b is parallel to the normal direction of the surface to be processed MGa of the mother glass substrate MG. The axis direction of the cross rotation shaft 24b is inclined with respect to the vertical direction, and the inclination angle thereof is substantially equal to the inclination angle formed by the axis direction of the parallel rotation shaft 23b constituting the substrate transport unit 23 with respect to the horizontal direction. It has become. That is, the axis direction of the intersecting rotation shaft 24 b is orthogonal to the axis direction of the parallel rotation shaft 23 b that constitutes the substrate transport unit 23. In this way, the size of the substrate pressing roller 24a protruding from the surface to be processed MGa of the mother glass substrate MG toward the etching liquid discharge unit 25 or the cleaning liquid discharge unit 26 as the processing liquid supply unit is minimized. The retention of the etching liquid EL or the cleaning liquid CL, which is the processing liquid due to the roller 24a, is less likely to occur.
　次に、上記のような構成のウェットエッチング装置２０を用いたマザーガラス基板ＭＧの処理手順を説明する。まず、図２から図４に示すように、基板搬送部２３の基板搬送ローラ２３ａ上に載置されたマザーガラス基板ＭＧは、基板搬送ローラ２３ａ及び並行回転軸２３ｂの回転に伴ってウェットエッチング処理槽２１の搬入口２１ａから内部に搬入される。ウェットエッチング処理槽２１内に搬入されたマザーガラス基板ＭＧの被処理面ＭＧａには、エッチング液吐出部２５から吐出されるエッチング液ＥＬが供給される。このエッチング液ＥＬによって被処理面ＭＧａにおいてエッチングの対象となる膜のうち、レジスト膜によって覆われていない部分が腐食されて除去される。エッチング液吐出部２５によるエッチング液ＥＬの供給に際しては、基板搬送部２３は、ウェットエッチング処理槽２１内に配された基板搬送ローラ２３ａ及び並行回転軸２３ｂを正逆方向に繰り返し回転させることで、エッチング液ＥＬが散布される範囲内においてマザーガラス基板ＭＧを往復搬送している。なお、図２及び図５では、マザーガラス基板ＭＧが往復搬送に伴って上流側及び下流側へ移動した状態を二点鎖線により図示している。このマザーガラス基板ＭＧの往復搬送に際しては、補助基板搬送部２４は、マザーガラス基板ＭＧを被処理面ＭＧａ側から押さえる基板押さえローラ２４ａが、基板搬送ローラ２３ａの回転に同期して交差回転軸２４ｂの軸線周りに回転されているので、搬送に伴って生じ得るマザーガラス基板ＭＧのばたつきを抑制する形でマザーガラス基板ＭＧの搬送を補助することができ、マザーガラス基板ＭＧが安定的に搬送される。このように、ガラス基板ＭＧを往復搬送しつつエッチング処理を行うようにしているので、仮に基板搬送ローラ及び並行回転軸を正方向（一方向）のみに回転させてマザーガラス基板ＭＧを搬送しつつエッチング処理を行うようにした場合に比べると、マザーガラス基板ＭＧの処理時間などの条件設定に係る自由度が高いものとなる。しかも、基板搬送部２３を構成する並行回転軸２３ｂが水平方向に対して傾くことで、往復搬送されるマザーガラス基板ＭＧの被処理面ＭＧａが水平方向に対して傾いていることから、被処理面ＭＧａ上に供給されたエッチング液ＥＬが重力を利用して被処理面ＭＧａ上を効率的に流動されるとともに、エッチング処理の効率化が図られる。その一方、重力を利用して被処理面ＭＧａ上を流動するエッチング液ＥＬは、基板押さえローラ２４ａによって流動が妨げられることが懸念される。その点、補助基板搬送部２４は、基板押さえローラ２４ａを軸支する交差回転軸２４ｂの軸線方向が被処理面ＭＧａと交差していて一部がマザーガラス基板ＭＧに対して非重畳となる形で配されることで、基板押さえローラ２４ａがマザーガラス基板ＭＧの被処理面ＭＧａから上側に突き出る寸法は、基板押さえローラ２４ａの直径は勿論のこと厚みよりも小さくなっている。これにより、基板押さえローラ２４ａによってマザーガラス基板ＭＧの被処理面ＭＧａに供給されるエッチング液ＥＬの流動が妨げられ難くなるので、基板押さえローラ２４ａに起因して基板押さえローラ２４ａ付近においてエッチング液ＥＬが滞留し難くなる。従って、マザーガラス基板ＭＧの被処理面ＭＧａの面内においてエッチング液ＥＬによるエッチング処理、つまりエッチングレートが均一化される。 Next, a processing procedure for the mother glass substrate MG using the wet etching apparatus 20 configured as described above will be described. First, as shown in FIGS. 2 to 4, the mother glass substrate MG placed on the substrate transport roller 23a of the substrate transport unit 23 is subjected to a wet etching process in accordance with the rotation of the substrate transport roller 23a and the parallel rotation shaft 23b. It is carried into the inside from the carry-in port 21 a of the tank 21. The etching solution EL discharged from the etching solution discharge unit 25 is supplied to the processing surface MGa of the mother glass substrate MG carried into the wet etching processing tank 21. Of the film to be etched on the surface to be processed MGa, the portion not covered with the resist film is corroded and removed by the etching liquid EL. When supplying the etching solution EL by the etching solution discharge unit 25, the substrate transfer unit 23 repeatedly rotates the substrate transfer roller 23a and the parallel rotation shaft 23b disposed in the wet etching processing tank 21 in the forward and reverse directions. The mother glass substrate MG is reciprocated and conveyed within a range where the etching liquid EL is dispersed. 2 and 5, a state in which the mother glass substrate MG moves to the upstream side and the downstream side with the reciprocating conveyance is illustrated by a two-dot chain line. In the reciprocal conveyance of the mother glass substrate MG, the auxiliary substrate conveyance unit 24 is configured such that the substrate pressing roller 24a that holds the mother glass substrate MG from the processing surface MGa side intersects with the rotation of the substrate conveyance roller 23a. , The mother glass substrate MG can be transported in a stable manner in a manner that suppresses fluttering of the mother glass substrate MG that may occur with transport, and the mother glass substrate MG is stably transported. The As described above, the etching process is performed while reciprocating the glass substrate MG. Therefore, the mother glass substrate MG is conveyed while rotating the substrate conveyance roller and the parallel rotation shaft only in the positive direction (one direction). Compared to the case where the etching process is performed, the degree of freedom related to setting conditions such as the processing time of the mother glass substrate MG is higher. Moreover, since the parallel rotation shaft 23b constituting the substrate transport unit 23 is tilted with respect to the horizontal direction, the surface to be processed MGa of the mother glass substrate MG to be transported reciprocally is tilted with respect to the horizontal direction. The etching liquid EL supplied onto the surface MGa is efficiently flowed over the surface to be processed MGa using gravity, and the efficiency of the etching process is improved. On the other hand, there is a concern that the etching liquid EL flowing on the surface to be processed MGa using gravity is prevented from flowing by the substrate pressing roller 24a. In that respect, the auxiliary substrate transport unit 24 has a shape in which the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG. The substrate pressing roller 24a protrudes upward from the processing surface MGa of the mother glass substrate MG so that the diameter of the substrate pressing roller 24a is naturally smaller than the thickness. This makes it difficult for the substrate pressing roller 24a to hinder the flow of the etching liquid EL supplied to the processing surface MGa of the mother glass substrate MG, so that the etching liquid EL near the substrate pressing roller 24a is caused by the substrate pressing roller 24a. Becomes difficult to stay. Therefore, the etching process using the etching liquid EL, that is, the etching rate is made uniform in the surface of the target surface MGa of the mother glass substrate MG.
　ウェットエッチング処理槽２１でのエッチング処理を終えたら、基板搬送部２３は、マザーガラス基板ＭＧを下流側へと搬送し、ウェットエッチング処理槽２１の搬出口２１ｂから洗浄槽２２の搬入口２２ａを通して洗浄槽２２内に搬入する。このときの搬送速度は、各槽２１，２２内での往復搬送時の搬送速度よりも速くされるのが好ましい。洗浄槽２２内では、図５に示すように、マザーガラス基板ＭＧの被処理面ＭＧａに対して洗浄液吐出部２６から吐出される洗浄液ＣＬが供給される。洗浄槽２２では、マザーガラス基板ＭＧの被処理面ＭＧａを洗浄液ＣＬによって洗浄することで、エッチング液ＥＬを除去することができる。洗浄液吐出部２６による洗浄液ＣＬの供給に際しても、基板搬送部２３は、洗浄槽２２内に配された基板搬送ローラ２３ａ及び並行回転軸２３ｂを正逆方向に繰り返し回転させることで、洗浄液ＣＬが散布される範囲内においてマザーガラス基板ＭＧを往復搬送している。このマザーガラス基板ＭＧの往復搬送に際しては、補助基板搬送部２４は、マザーガラス基板ＭＧを被処理面ＭＧａ側から押さえる基板押さえローラ２４ａが、基板搬送ローラ２３ａの回転に同期して交差回転軸２４ｂの軸線周りに回転されているので、搬送に伴って生じ得るマザーガラス基板ＭＧのばたつきを抑制する形でマザーガラス基板ＭＧの搬送を補助することができ、マザーガラス基板ＭＧが安定的に搬送される。このように、ガラス基板ＭＧを往復搬送しつつ洗浄処理を行うようにしているので、仮に基板搬送ローラ及び並行回転軸を正方向のみに回転させてマザーガラス基板ＭＧを搬送しつつ洗浄処理を行うようにした場合に比べると、マザーガラス基板ＭＧの処理時間などの条件設定に係る自由度が高いものとなる。しかも、基板搬送部２３を構成する並行回転軸２３ｂが水平方向に対して傾くことで、往復搬送されるマザーガラス基板ＭＧの被処理面ＭＧａが水平方向に対して傾いていることから、被処理面ＭＧａ上に供給された洗浄液ＣＬが重力を利用して被処理面ＭＧａ上を効率的に流動されるとともに、洗浄処理の効率化が図られる。その一方、重力を利用して被処理面ＭＧａ上を流動する洗浄液ＣＬは、基板押さえローラ２４ａによって流動が妨げられることが懸念される。その点、補助基板搬送部２４は、基板押さえローラ２４ａを軸支する交差回転軸２４ｂの軸線方向が被処理面ＭＧａと交差していて一部がマザーガラス基板ＭＧに対して非重畳となる形で配されることで、基板押さえローラ２４ａがマザーガラス基板ＭＧの被処理面ＭＧａから上側に突き出る寸法は、基板押さえローラ２４ａの直径は勿論のこと厚みよりも小さくなっている。これにより、基板押さえローラ２４ａによってマザーガラス基板ＭＧの被処理面ＭＧａに供給される洗浄液ＣＬの流動が妨げられ難くなるので、基板押さえローラ２４ａに起因して基板押さえローラ２４ａ付近において洗浄液ＣＬが滞留し難くなる。従って、マザーガラス基板ＭＧの被処理面ＭＧａの面内において洗浄液ＣＬによる洗浄処理が均一化される。洗浄槽２２での洗浄処理を終えたら、基板搬送部２３は、マザーガラス基板ＭＧを洗浄槽２２の搬出口２２ｂから外部へと搬出する。 After the etching process in the wet etching tank 21 is completed, the substrate transfer unit 23 transfers the mother glass substrate MG to the downstream side, and cleans it from the outlet 21b of the wet etching tank 21 through the inlet 22a of the cleaning tank 22. Carry into the tank 22. It is preferable that the conveyance speed at this time is faster than the conveyance speed at the time of reciprocal conveyance in the tanks 21 and 22. In the cleaning tank 22, as shown in FIG. 5, the cleaning liquid CL discharged from the cleaning liquid discharge section 26 is supplied to the surface to be processed MGa of the mother glass substrate MG. In the cleaning tank 22, the etching liquid EL can be removed by cleaning the surface to be processed MGa of the mother glass substrate MG with the cleaning liquid CL. Even when the cleaning liquid CL is supplied by the cleaning liquid discharge unit 26, the substrate transport unit 23 repeatedly rotates the substrate transport roller 23 a and the parallel rotation shaft 23 b disposed in the cleaning tank 22 in the forward and reverse directions, thereby spraying the cleaning liquid CL. In this range, the mother glass substrate MG is reciprocated. In the reciprocal conveyance of the mother glass substrate MG, the auxiliary substrate conveyance unit 24 is configured such that the substrate pressing roller 24a that holds the mother glass substrate MG from the processing surface MGa side intersects with the rotation of the substrate conveyance roller 23a. , The mother glass substrate MG can be transported in a stable manner in a manner that suppresses fluttering of the mother glass substrate MG that may occur with transport, and the mother glass substrate MG is stably transported. The As described above, the cleaning process is performed while reciprocating the glass substrate MG. Therefore, the cleaning process is performed while the mother glass substrate MG is transported by rotating the substrate transport roller and the parallel rotation shaft only in the positive direction. Compared with the case where it does in this way, the freedom degree which concerns on condition settings, such as processing time of the mother glass substrate MG, becomes a high thing. Moreover, since the parallel rotation shaft 23b constituting the substrate transport unit 23 is tilted with respect to the horizontal direction, the surface to be processed MGa of the mother glass substrate MG to be transported reciprocally is tilted with respect to the horizontal direction. The cleaning liquid CL supplied onto the surface MGa efficiently flows on the surface to be processed MGa using gravity, and the cleaning process is made more efficient. On the other hand, there is a concern that the cleaning liquid CL that flows on the surface to be processed MGa using gravity is prevented from flowing by the substrate pressing roller 24a. In that respect, the auxiliary substrate transport unit 24 has a shape in which the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG. The substrate pressing roller 24a protrudes upward from the processing surface MGa of the mother glass substrate MG so that the diameter of the substrate pressing roller 24a is naturally smaller than the thickness. As a result, the flow of the cleaning liquid CL supplied to the processing surface MGa of the mother glass substrate MG is hardly hindered by the substrate pressing roller 24a, so that the cleaning liquid CL stays in the vicinity of the substrate pressing roller 24a due to the substrate pressing roller 24a. It becomes difficult to do. Therefore, the cleaning process using the cleaning liquid CL is made uniform in the surface of the target surface MGa of the mother glass substrate MG. After finishing the cleaning process in the cleaning tank 22, the substrate transport unit 23 carries the mother glass substrate MG out of the outlet 22 b of the cleaning tank 22 to the outside.
　以上説明したように本実施形態のウェットエッチング装置（基板処理装置）２０は、マザーガラス基板（基板）ＭＧの被処理面ＭＧａに処理液であるエッチング液ＥＬや洗浄液ＣＬ供給する処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６と、軸線方向が被処理面ＭＧａに並行する並行回転軸２３ｂと、並行回転軸２３ｂにより回転可能に軸支されてマザーガラス基板ＭＧを被処理面ＭＧａ側とは反対側から搬送可能な状態で支持する基板搬送ローラ２３ａと、を有していてマザーガラス基板ＭＧを搬送する基板搬送部２３と、軸線方向が被処理面ＭＧａと交差する交差回転軸２４ｂと、交差回転軸２４ｂによって回転可能に軸支されてマザーガラス基板ＭＧを被処理面ＭＧａ側から搬送可能な状態で押さえる基板押さえローラ２４ａと、を有していて一部がマザーガラス基板ＭＧに対して非重畳となる形で配されてマザーガラス基板ＭＧの搬送を補助する補助基板搬送部２４と、を備える。 As described above, the wet etching apparatus (substrate processing apparatus) 20 of the present embodiment is a processing liquid supply unit that supplies the etching liquid EL and the cleaning liquid CL, which are processing liquids, to the processing surface MGa of the mother glass substrate (substrate) MG. The etching liquid discharge part 25 and the cleaning liquid discharge part 26, the parallel rotation shaft 23b whose axis is parallel to the surface to be processed MGa, and the mother glass substrate MG that is rotatably supported by the parallel rotation shaft 23b A substrate transport roller 23a that supports the substrate in a state in which the substrate can be transported from the opposite side, and a substrate transport unit 23 that transports the mother glass substrate MG, and a cross rotation axis whose axis direction intersects the surface to be processed MGa 24b and a substrate pressing roller that is rotatably supported by the intersecting rotating shaft 24b and presses the mother glass substrate MG in a state in which it can be conveyed from the processing surface MGa side. Comprising a La 24a, an auxiliary substrate conveying portion 24 for assisting the transfer of the mother glass substrate MG part have is arranged in a manner to be non-overlapping with respect to the mother glass substrate MG have, a.
　このようにすれば、基板搬送部２３は、マザーガラス基板ＭＧを被処理面ＭＧａ側とは反対側から支持する基板搬送ローラ２３ａが、軸線方向が被処理面ＭＧａに並行する並行回転軸２３ｂの軸線周りに回転されることでマザーガラス基板ＭＧを搬送しており、搬送されるマザーガラス基板ＭＧの被処理面ＭＧａに処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６から処理液であるエッチング液ＥＬや洗浄液ＣＬが供給されることで被処理面ＭＧａの処理がなされる。補助基板搬送部２４は、マザーガラス基板ＭＧを被処理面ＭＧａ側から押さえる基板押さえローラ２４ａが、基板搬送ローラ２３ａの回転に同期して交差回転軸２４ｂの軸線周りに回転されることで、搬送に伴って生じ得るマザーガラス基板ＭＧのばたつきを抑制する形でマザーガラス基板ＭＧの搬送を補助する。そして、補助基板搬送部２４は、基板押さえローラ２４ａを軸支する交差回転軸２４ｂの軸線方向が被処理面ＭＧａと交差していて一部がマザーガラス基板ＭＧに対して非重畳となる形で配されているから、基板押さえローラ２４ａがマザーガラス基板ＭＧの被処理面ＭＧａから処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６側に突き出る寸法は、基板押さえローラ２４ａの直径より小さくなっている。これにより、基板押さえローラ２４ａによってマザーガラス基板ＭＧの被処理面ＭＧａに供給される処理液であるエッチング液ＥＬや洗浄液ＣＬの流動が妨げられ難くなるので、基板押さえローラ２４ａに起因する処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留が生じ難くなる。従って、マザーガラス基板ＭＧの被処理面ＭＧａの面内において処理液であるエッチング液ＥＬや洗浄液ＣＬによる処理が均一化される。 In this way, the substrate transport unit 23 includes the substrate transport roller 23a that supports the mother glass substrate MG from the side opposite to the surface to be processed MGa, and the parallel rotation shaft 23b whose axis is parallel to the surface to be processed MGa. The mother glass substrate MG is conveyed by being rotated around the axis, and the processing liquid is supplied from the etching liquid discharge unit 25 and the cleaning liquid discharge unit 26 which are processing liquid supply units to the processing surface MGa of the mother glass substrate MG being transferred. The processing surface MGa is processed by supplying the etching liquid EL and the cleaning liquid CL. The auxiliary substrate transport unit 24 transports the substrate pressing roller 24a that presses the mother glass substrate MG from the processing surface MGa side by rotating around the axis of the cross rotation shaft 24b in synchronization with the rotation of the substrate transport roller 23a. The conveyance of the mother glass substrate MG is assisted in a manner that suppresses the fluttering of the mother glass substrate MG that may occur along with this. The auxiliary substrate transport unit 24 is configured such that the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG. Since the substrate pressing roller 24a protrudes from the surface to be processed MGa of the mother glass substrate MG toward the etching liquid discharge unit 25 or the cleaning liquid discharge unit 26, the dimension of the substrate pressing roller 24a is larger than the diameter of the substrate pressing roller 24a. It is getting smaller. Accordingly, the flow of the etching liquid EL and the cleaning liquid CL, which are processing liquids supplied to the processing surface MGa of the mother glass substrate MG by the substrate pressing roller 24a, is not easily disturbed. It is difficult for a certain etching solution EL or cleaning solution CL to stay. Accordingly, the processing with the etching liquid EL and the cleaning liquid CL, which are processing liquids, is made uniform within the surface of the target surface MGa of the mother glass substrate MG.
　また、補助基板搬送部２４は、基板押さえローラ２４ａにおけるマザーガラス基板ＭＧ側とは反対側の外面（面）２４ａ２が、交差回転軸２４ｂの軸線方向に対して傾く。このようにすれば、マザーガラス基板ＭＧの被処理面ＭＧａに供給された処理液であるエッチング液ＥＬや洗浄液ＣＬが、補助基板搬送部２４の基板押さえローラ２４ａにおけるマザーガラス基板ＭＧ側とは反対側の外面２４ａ２に達すると、その外面２４ａ２が交差回転軸２４ｂの軸線方向に対して傾いていることで、同外面２４ａ２上での流動性が担保される。これにより、マザーガラス基板ＭＧの被処理面ＭＧａにおいて処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留がより生じ難くなる。 In the auxiliary substrate transport section 24, the outer surface (surface) 24a2 opposite to the mother glass substrate MG side of the substrate pressing roller 24a is inclined with respect to the axial direction of the cross rotation shaft 24b. In this way, the etching liquid EL or the cleaning liquid CL, which is the processing liquid supplied to the processing surface MGa of the mother glass substrate MG, is opposite to the mother glass substrate MG side in the substrate pressing roller 24a of the auxiliary substrate transport unit 24. When the outer surface 24a2 on the side is reached, the outer surface 24a2 is inclined with respect to the axial direction of the intersecting rotation shaft 24b, thereby ensuring fluidity on the outer surface 24a2. Thereby, the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
　また、補助基板搬送部２４は、基板押さえローラ２４ａが交差回転軸２４ｂ側より外周端側ほど厚みが小さくなる。このようにすれば、基板押さえローラ２４ａは、外周端での厚みが最小となるから、マザーガラス基板ＭＧの被処理面ＭＧａに供給される処理液であるエッチング液ＥＬや洗浄液ＣＬの流動が基板押さえローラ２４ａの外周端によって妨げられ難いものとなる。これにより、マザーガラス基板ＭＧの被処理面ＭＧａにおいて処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留がより生じ難くなる。 Further, the thickness of the auxiliary substrate transport unit 24 becomes smaller as the substrate pressing roller 24a is closer to the outer peripheral end side than the cross rotation shaft 24b side. In this way, since the thickness of the substrate pressing roller 24a is minimized at the outer peripheral end, the flow of the etching liquid EL and the cleaning liquid CL, which are the processing liquid supplied to the processing surface MGa of the mother glass substrate MG, is the substrate. It becomes difficult to be hindered by the outer peripheral end of the pressing roller 24a. Thereby, the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is less likely to occur on the target surface MGa of the mother glass substrate MG.
　また、補助基板搬送部２４は、交差回転軸２４ｂの軸線方向がマザーガラス基板ＭＧの被処理面ＭＧａの法線方向に並行する。このようにすれば、基板押さえローラ２４ａがマザーガラス基板ＭＧの被処理面ＭＧａから処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６側に突き出る寸法を最小化することが可能となるので、基板押さえローラ２４ａに起因する処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留がより生じ難くなる。 Further, in the auxiliary substrate transport unit 24, the axial direction of the intersecting rotation shaft 24b is parallel to the normal direction of the processing surface MGa of the mother glass substrate MG. In this way, it is possible to minimize the size of the substrate pressing roller 24a protruding from the surface to be processed MGa of the mother glass substrate MG toward the etching liquid discharge unit 25 or the cleaning liquid discharge unit 26 that is the processing liquid supply unit. Therefore, the retention of the etching liquid EL and the cleaning liquid CL, which are the processing liquid due to the substrate pressing roller 24a, is less likely to occur.
　また、補助基板搬送部２４は、基板押さえローラ２４ａが、マザーガラス基板ＭＧの被処理面ＭＧａに当接される被処理面当接部２７と、マザーガラス基板ＭＧにおける被処理面ＭＧａとは反対側の被処理反対面ＭＧｂに当接されて被処理面当接部２７との間でマザーガラス基板ＭＧを挟み込む被処理反対面当接部２８と、を有する。このようにすれば、基板押さえローラ２４ａは、マザーガラス基板ＭＧの被処理面ＭＧａに当接される被処理面当接部２７と、マザーガラス基板ＭＧの被処理反対面ＭＧｂに当接される被処理反対面当接部２８と、の間でマザーガラス基板ＭＧを挟み込んでいるから、基板搬送部２３及び補助基板搬送部２４によるマザーガラス基板ＭＧの搬送がより安定したものとなり、搬送に伴って生じ得るマザーガラス基板ＭＧのばたつきをより好適に抑制することができる。 Further, in the auxiliary substrate transport unit 24, the substrate pressing roller 24a is opposite to the processing surface abutting portion 27 in which the substrate pressing roller 24a contacts the processing surface MGa of the mother glass substrate MG and the processing surface MGa of the mother glass substrate MG. A surface to be processed opposite surface abutting portion 28 which is in contact with the surface to be processed opposite surface MGb and sandwiches the mother glass substrate MG with the surface to be processed abutting portion 27. In this way, the substrate pressing roller 24a is brought into contact with the processing surface contact portion 27 that is in contact with the processing surface MGa of the mother glass substrate MG and the processing target opposite surface MGb of the mother glass substrate MG. Since the mother glass substrate MG is sandwiched between the opposite surface contact portion 28 to be processed, the conveyance of the mother glass substrate MG by the substrate conveyance portion 23 and the auxiliary substrate conveyance portion 24 becomes more stable and accompanying the conveyance. Fluttering of the mother glass substrate MG that may occur can be more suitably suppressed.
　また、補助基板搬送部２４は、基板押さえローラ２４ａがマザーガラス基板ＭＧと点接触される。このようにすれば、基板押さえローラ２４ａがマザーガラス基板ＭＧに接触するのに伴って生じ得るマザーガラス基板ＭＧへの悪影響を軽減することができる。 In the auxiliary substrate transport unit 24, the substrate pressing roller 24a is brought into point contact with the mother glass substrate MG. In this way, it is possible to reduce adverse effects on the mother glass substrate MG that may occur as the substrate pressing roller 24a contacts the mother glass substrate MG.
　また、基板搬送部２３は、並行回転軸２３ｂが水平方向に対して傾く。このようにすれば、基板搬送ローラ２３ａは、水平方向に対して傾斜する並行回転軸２３ｂによって軸支されているので、基板搬送ローラ２３ａによって搬送されるマザーガラス基板ＭＧは、被処理面ＭＧａが水平方向に対して傾く。水平方向に対して傾く被処理面ＭＧａに処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６から処理液であるエッチング液ＥＬや洗浄液ＣＬが供給されることで、処理液であるエッチング液ＥＬや洗浄液ＣＬが被処理面ＭＧａにおいて重力を利用して効率的に流動され、処理の効率化が図られる。その一方、重力を利用して被処理面ＭＧａ上を流動する処理液であるエッチング液ＥＬや洗浄液ＣＬは、基板押さえローラ２４ａによって流動が妨げられることが懸念されるものの、上記したように補助基板搬送部２４は、基板押さえローラ２４ａを軸支する交差回転軸２４ｂの軸線方向が被処理面ＭＧａと交差していて一部がマザーガラス基板ＭＧに対して非重畳となる形で配されることで、基板押さえローラ２４ａによって処理液であるエッチング液ＥＬや洗浄液ＣＬの流動が妨げられ難くなっており、もって基板押さえローラ２４ａに起因する処理液であるエッチング液ＥＬや洗浄液ＣＬの滞留が生じ難くなっている。 Further, in the substrate transport unit 23, the parallel rotation shaft 23b is inclined with respect to the horizontal direction. In this way, since the substrate transport roller 23a is pivotally supported by the parallel rotating shaft 23b inclined with respect to the horizontal direction, the mother glass substrate MG transported by the substrate transport roller 23a has a surface to be processed MGa. Tilt relative to the horizontal direction. The etching liquid EL or the cleaning liquid CL as the processing liquid is supplied from the etching liquid discharge section 25 or the cleaning liquid discharge section 26 as the processing liquid supply section to the processing surface MGa inclined with respect to the horizontal direction. The liquid EL and the cleaning liquid CL are efficiently flowed using gravity on the surface to be processed MGa, so that the processing efficiency is improved. On the other hand, the etching liquid EL and the cleaning liquid CL, which are processing liquids that flow on the surface to be processed MGa using gravity, may be disturbed by the substrate pressing roller 24a. The transport unit 24 is arranged in such a manner that the axial direction of the intersecting rotation shaft 24b that pivotally supports the substrate pressing roller 24a intersects the surface to be processed MGa and a part thereof does not overlap the mother glass substrate MG. Therefore, the flow of the etching liquid EL and the cleaning liquid CL, which are processing liquids, is hardly hindered by the substrate pressing roller 24a, so that the retention of the etching liquid EL and the cleaning liquid CL, which are processing liquids due to the substrate pressing roller 24a, is difficult to occur. It has become.
　また、基板搬送部２３は、少なくとも処理液供給部であるエッチング液吐出部２５や洗浄液吐出部２６による処理液であるエッチング液ＥＬや洗浄液ＣＬの供給が行われる間、基板搬送ローラ２３ａを正逆方向に繰り返し回転させてマザーガラス基板ＭＧを往復搬送する。このようにすれば、仮に基板搬送ローラを正方向のみに回転させてマザーガラス基板ＭＧを搬送しつつ処理を行うようにした場合に比べると、マザーガラス基板ＭＧの処理時間などの条件設定に係る自由度が高いものとなる。 Further, the substrate transport unit 23 moves the substrate transport roller 23a forward and backward while at least the etching liquid EL and the cleaning liquid CL as the processing liquid are supplied by the etching liquid discharge unit 25 and the cleaning liquid discharge unit 26 as the processing liquid supply unit. The mother glass substrate MG is reciprocally conveyed by being repeatedly rotated in the direction. In this case, compared to the case where the processing is performed while the mother glass substrate MG is transported by rotating the substrate transport roller only in the positive direction, it relates to the condition setting such as the processing time of the mother glass substrate MG. The degree of freedom is high.
　＜実施形態２＞
　本発明の実施形態２を図６によって説明する。この実施形態２では、基板搬送部１２３の構成を変更したものを示す。なお、上記した実施形態１と同様の構造、作用及び効果について重複する説明は省略する。 <Embodiment 2>
A second embodiment of the present invention will be described with reference to FIG. In the second embodiment, the configuration of the substrate transport unit 123 is changed. In addition, the overlapping description about the same structure, operation | movement, and effect as above-mentioned Embodiment 1 is abbreviate | omitted.
　本実施形態に係る基板搬送部１２３は、図６に示すように、並行回転軸１２３ｂが水平方向に並行する姿勢で配される構成となっている。この並行回転軸１２３ｂに軸支された複数の基板搬送ローラ１２３ａは、Ｙ軸方向についての位置によらずＺ軸方向についての高さが一定とされる。このような構成の基板搬送部１２３によって搬送されるマザーガラス基板ＭＧは、その板面（被処理面ＭＧａ及び被処理反対面ＭＧｂ）が並行回転軸１２３ｂの軸線方向に倣って水平方向に並行している。また、Ｙ軸方向に沿って並ぶ複数のエッチング液吐出部１２５（図示しない洗浄液吐出部）は、並行回転軸１２３ｂの軸線方向に倣ってＺ軸方向についての設置高さが一定とされる。そして、補助基板搬送部１２４は、交差回転軸１２４ｂの軸線方向がマザーガラス基板ＭＧの板面の法線方向と一致するとともに鉛直方向（Ｚ軸方向）とも一致している。このような構成においても、補助基板搬送部１２４を構成する基板押さえローラ１２４ａによってマザーガラス基板ＭＧにおけるＹ軸方向についての端部が押さえれることで、搬送に伴って生じ得るマザーガラス基板ＭＧのばたつきを抑制することができるのに加えて、マザーガラス基板ＭＧの被処理面ＭＧａ上に供給される処理液（エッチング液ＥＬなど）の流動が基板押さえローラ１２４ａによって妨げられ難くされることで、マザーガラス基板ＭＧの被処理面ＭＧａの面内において処理液による処理が均一化される。 As shown in FIG. 6, the substrate transport unit 123 according to the present embodiment has a configuration in which the parallel rotation shafts 123b are arranged in a posture parallel to the horizontal direction. The plurality of substrate transport rollers 123a supported by the parallel rotating shaft 123b have a constant height in the Z-axis direction regardless of the position in the Y-axis direction. The mother glass substrate MG transported by the substrate transport section 123 having such a configuration has its plate surfaces (surface to be processed MGa and surface to be processed MGb) parallel to the horizontal direction following the axial direction of the parallel rotation shaft 123b. ing. In addition, the plurality of etching liquid discharge portions 125 (cleaning liquid discharge portions (not shown)) arranged along the Y-axis direction have a constant installation height in the Z-axis direction following the axial direction of the parallel rotation shaft 123b. In the auxiliary substrate transport unit 124, the axis direction of the intersecting rotation shaft 124b matches the normal direction of the plate surface of the mother glass substrate MG and also matches the vertical direction (Z-axis direction). Even in such a configuration, the end of the mother glass substrate MG in the Y-axis direction is pressed by the substrate pressing roller 124a configuring the auxiliary substrate transfer unit 124, so that the mother glass substrate MG fluttering that may occur during transfer is performed. In addition to being able to suppress the flow of the processing liquid (etching liquid EL or the like) supplied onto the processing surface MGa of the mother glass substrate MG, it is difficult for the substrate pressing roller 124a to obstruct the mother glass. The processing with the processing liquid is made uniform in the surface of the processing surface MGa of the substrate MG.
　＜参考例＞
　参考例を図７または図８によって説明する。この参考例では、補助基板搬送部３０を構成する基板押さえローラ３０に開口３０ａ１を形成した構成を示す。 <Reference example>
A reference example will be described with reference to FIG. In this reference example, a configuration in which an opening 30 a 1 is formed in the substrate pressing roller 30 configuring the auxiliary substrate transport unit 30 is shown.
　本参考例に係る補助基板搬送部３０は、図７及び図８に示すように、マザーガラス基板ＭＧを被処理面ＭＧａ側から押さえる基板押さえローラ３０ａと、基板押さえローラ３０ａを回転可能に軸支して軸線方向が被処理面ＭＧａに並行する回転軸３０ｂと、を有する。基板押さえローラ３０ａは、その全域がマザーガラス基板ＭＧと重畳するとともに被処理面ＭＧａ上に載る形で配されており、基板搬送部３１側とは反対側からマザーガラス基板ＭＧを押さえている。なお、基板搬送部３１の構成は、上記した実施形態１に記載した基板搬送部２３と同様である。基板押さえローラ３０ａには、回転軸３０ｂと外周端との間に複数の開口３０ａ１が形成されている。開口３０ａ１は、平面形状が略扇形をなしていて回転軸３０ｂの軸線周りに４つが等間隔に並んで配されている。基板押さえローラ３０ａは、４つの開口３０ａ１を仕切るとともに、回転軸３０ｂの軸受け部分と外周端とを連ねる４本のスポーク部３０ａ２を有する。そして、マザーガラス基板ＭＧの被処理面ＭＧａに処理液供給部３２から供給された処理液３３が基板押さえローラ３０ａ付近に達すると、処理液は、基板押さえローラ３０ａの各開口３０ａ１を通ることで、基板押さえローラ３０ａ付近に滞留することが避けられている。これにより、マザーガラス基板ＭＧの被処理面ＭＧａの面内において処理液による処理が均一化される。 As shown in FIGS. 7 and 8, the auxiliary substrate transport unit 30 according to the present reference example has a substrate pressing roller 30a for pressing the mother glass substrate MG from the processing surface MGa side, and a substrate pressing roller 30a that is rotatably supported. Thus, the rotating shaft 30b whose axis is parallel to the surface to be processed MGa is provided. The substrate pressing roller 30a is arranged in such a manner that the entire area thereof overlaps with the mother glass substrate MG and is placed on the processing surface MGa, and holds the mother glass substrate MG from the side opposite to the substrate transport unit 31 side. The configuration of the substrate transport unit 31 is the same as that of the substrate transport unit 23 described in the first embodiment. The substrate pressing roller 30a has a plurality of openings 30a1 between the rotation shaft 30b and the outer peripheral end. The openings 30a1 have a substantially fan shape in plan view, and four openings 30a1 are arranged at equal intervals around the axis of the rotating shaft 30b. The substrate pressing roller 30a has four spoke portions 30a2 that partition the four openings 30a1 and connect the bearing portion of the rotating shaft 30b and the outer peripheral end. When the processing liquid 33 supplied from the processing liquid supply unit 32 reaches the vicinity of the substrate pressing roller 30a on the processing surface MGa of the mother glass substrate MG, the processing liquid passes through each opening 30a1 of the substrate pressing roller 30a. It is avoided to stay in the vicinity of the substrate pressing roller 30a. Thereby, the process by the process liquid is made uniform in the surface of the target surface MGa of the mother glass substrate MG.
　＜他の実施形態＞
　本発明は上記記述及び図面によって説明した実施形態に限定されるものではなく、例えば次のような実施形態も本発明の技術的範囲に含まれる。
　（１）上記した各実施形態では、各槽において基板搬送部によってマザーガラス基板を揺動搬送しつつ処理液の供給を行う場合を示したが、各槽において基板搬送部を構成する基板搬送ローラ及び並行回転軸が正方向にのみ回転されて往復搬送を行わなくても構わない。
　（２）上記した各実施形態では、補助基板搬送部を構成する交差回転軸がマザーガラス基板の板面と直交していて同板面の法線方向に並行する場合を示したが、交差回転軸がマザーガラス基板の板面と直交することなく、９０°以外の角度でもって交差する配置であっても構わない。
　（３）上記した各実施形態では、補助基板搬送部がマザーガラス基板に対してＹ軸方向についての一端側（鉛直方向の下側）のみに配される場合を示したが、補助基板搬送部がマザーガラス基板に対してＹ軸方向についての他端側（鉛直方向の上側）のみに配されていても構わない。さらには、補助基板搬送部がマザーガラス基板をＹ軸方向について両側から挟み込む形で配されていても構わない。
　（４）上記した各実施形態では、補助基板搬送部を構成する基板押さえローラの外面が交差回転軸の軸線方向に対して傾くとともに、マザーガラス基板の被処理面に対しても傾く構成を示したが、補助基板搬送部を構成する基板押さえローラの外面が交差回転軸の軸線方向に対して直交するとともに、マザーガラス基板の被処理面に対して並行する構成であっても構わない。
　（５）上記した各実施形態では、補助基板搬送部を構成する基板押さえローラの各当接部がマザーガラス基板に対して点接触される場合を示したが、基板押さえローラの各当接部がマザーガラス基板に対して線接触または面接触しても構わない。
　（６）上記した各実施形態では、補助基板搬送部を構成する基板押さえローラがマザーガラス基板の被処理反対面に当接される被処理反対面当接部を有する場合を示したが、基板押さえローラが被処理反対面当接部を有さない構成であっても構わない。
　（７）上記した各実施形態に記載したウェットエッチング処理槽の搬出口付近に、マザーガラス基板からエッチング液を除去するためのエアナイフなどを設置することも勿論可能である。
　（８）上記した各実施形態では、洗浄槽で用いられる洗浄液が純水または超純水とされる場合を示したが、洗浄液が純水や超純水以外であっても構わない。
　（９）上記した各実施形態では、ＴＮ型やＶＡ型の液晶パネルを構成するガラス基板のマザーガラス基板をウェットエッチング処理するためのウェットエッチング装置を示したが、ＩＰＳ型やＦＦＳ型の液晶パネルを構成するガラス基板のマザーガラス基板をウェットエッチング処理するためのウェットエッチング装置であっても構わない。
　（１０）上記した各実施形態では、液晶パネルを構成するガラス基板のマザーガラス基板をウェットエッチング処理するためのウェットエッチング装置を示したが、液晶パネル以外の表示パネルを構成する基板をウェットエッチング処理するためのウェットエッチング装置であっても構わない。液晶パネル以外の表示パネルとしては、例えば有機ＥＬパネル、ＰＤＰ、ＥＰＤ（電気泳動ディスプレイパネル、ＭＥＭＳ（Micro Electro Mechanical Systems）表示パネルなどが挙げられる。
　（１１）上記した各実施形態では、基板処理装置としてマザーガラス基板をウェットエッチング処理するウェットエッチング装置を例示したが、ウェットエッチング装置以外の基板処理装置（例えば現像工程で用いられる現像装置や洗浄装置など）であっても構わない。 <Other embodiments>
The present invention is not limited to the embodiments described with reference to the above description and drawings. For example, the following embodiments are also included in the technical scope of the present invention.
(1) In each of the above-described embodiments, the case where the processing liquid is supplied while the mother glass substrate is being oscillated and conveyed by the substrate conveyance unit in each tank has been described. However, the substrate conveyance roller constituting the substrate conveyance unit in each tank In addition, the reciprocating conveyance may not be performed by rotating the parallel rotation shaft only in the forward direction.
(2) In each of the above-described embodiments, the case where the intersecting rotation axis configuring the auxiliary substrate transport unit is orthogonal to the plate surface of the mother glass substrate and parallel to the normal direction of the same plate surface is shown. The axes may be arranged so as to intersect at an angle other than 90 ° without being orthogonal to the plate surface of the mother glass substrate.
(3) In each of the above-described embodiments, the auxiliary substrate transport unit is disposed only on one end side in the Y-axis direction (lower side in the vertical direction) with respect to the mother glass substrate. May be arranged only on the other end side in the Y-axis direction (upper side in the vertical direction) with respect to the mother glass substrate. Furthermore, the auxiliary substrate transport unit may be arranged so as to sandwich the mother glass substrate from both sides in the Y-axis direction.
(4) In each of the above-described embodiments, the outer surface of the substrate pressing roller constituting the auxiliary substrate transport unit is inclined with respect to the axial direction of the intersecting rotation axis, and is also inclined with respect to the surface to be processed of the mother glass substrate. However, the outer surface of the substrate pressing roller configuring the auxiliary substrate transport unit may be configured to be orthogonal to the axial direction of the intersecting rotation axis and parallel to the surface to be processed of the mother glass substrate.
(5) In each of the above-described embodiments, the case where each contact portion of the substrate pressing roller constituting the auxiliary substrate transport unit is point-contacted with the mother glass substrate has been described. May be in line contact or surface contact with the mother glass substrate.
(6) In each of the above-described embodiments, the case where the substrate pressing roller that constitutes the auxiliary substrate transport unit has the processing opposite surface contact portion that contacts the processing target opposite surface of the mother glass substrate has been described. The pressing roller may have a configuration that does not have the opposite surface contact portion to be processed.
(7) It is of course possible to install an air knife or the like for removing the etching solution from the mother glass substrate in the vicinity of the carry-out port of the wet etching treatment tank described in the above embodiments.
(8) In the above-described embodiments, the case where the cleaning liquid used in the cleaning tank is pure water or ultrapure water is shown, but the cleaning liquid may be other than pure water or ultrapure water.
(9) In each of the above-described embodiments, the wet etching apparatus for performing the wet etching process on the mother glass substrate of the glass substrate constituting the TN type or VA type liquid crystal panel has been described. However, an IPS type or FFS type liquid crystal panel is used. It may be a wet etching apparatus for performing a wet etching process on the mother glass substrate of the glass substrate constituting the glass substrate.
(10) In each of the above-described embodiments, the wet etching apparatus for performing the wet etching process on the mother glass substrate of the glass substrate constituting the liquid crystal panel has been shown. However, the wet etching process is performed on the substrate constituting the display panel other than the liquid crystal panel. It may be a wet etching apparatus. Examples of the display panel other than the liquid crystal panel include an organic EL panel, PDP, EPD (electrophoretic display panel, MEMS (Micro Electro Mechanical Systems) display panel, and the like.
(11) In each of the above-described embodiments, the wet etching apparatus that performs wet etching processing on the mother glass substrate is exemplified as the substrate processing apparatus. However, the substrate processing apparatus other than the wet etching apparatus (for example, a developing apparatus or a cleaning apparatus used in the developing process). Etc.).
　２０…ウェットエッチング装置（基板処理装置）、２３，１２３…基板搬送部、２３ａ，１２３ａ…基板搬送ローラ、２３ｂ，１２３ｂ…並行回転軸、２４，１２４…補助基板搬送部、２４ａ，１２４ａ…基板押さえローラ、２４ａ２…外面（面）、２４ｂ，１２４ｂ…交差回転軸、２５，１２５…エッチング液吐出部（処理液供給部）、２６…洗浄液吐出部（処理液供給部）、２７…被処理面当接部、２８…被処理反対面当接部、ＣＬ…洗浄液（処理液）、ＥＬ…エッチング液（処理液）、ＭＧ…マザーガラス基板（基板）、ＭＧａ…被処理面、ＭＧｂ…被処理反対面 DESCRIPTION OF SYMBOLS 20 ... Wet etching apparatus (substrate processing apparatus), 23, 123 ... Substrate conveyance part, 23a, 123a ... Substrate conveyance roller, 23b, 123b ... Parallel rotating shaft, 24, 124 ... Auxiliary substrate conveyance part, 24a, 124a ... Substrate presser Roller, 24a2 ... outer surface (surface), 24b, 124b ... crossed rotating shafts, 25,125 ... etching liquid discharge section (processing liquid supply section), 26 ... cleaning liquid discharge section (processing liquid supply section), 27 ... surface to be processed Contact portion, 28 ... opposite surface contact portion to be processed, CL ... cleaning solution (processing solution), EL ... etching solution (processing solution), MG ... mother glass substrate (substrate), MGa ... treated surface, MGb ... opposite to processing surface

Claims (8)

  1. 　基板の被処理面に処理液を供給する処理液供給部と、
    　軸線方向が前記被処理面に並行する並行回転軸と、前記並行回転軸により回転可能に軸支されて前記基板を前記被処理面側とは反対側から搬送可能な状態で支持する基板搬送ローラと、を有していて前記基板を搬送する基板搬送部と、
    　軸線方向が前記被処理面と交差する交差回転軸と、前記交差回転軸によって回転可能に軸支されて前記基板を前記被処理面側から搬送可能な状態で押さえる基板押さえローラと、を有していて一部が前記基板に対して非重畳となる形で配されて前記基板の搬送を補助する補助基板搬送部と、を備える基板処理装置。     A processing liquid supply unit for supplying a processing liquid to the surface to be processed of the substrate;
    A parallel rotating shaft whose axial direction is parallel to the surface to be processed, and a substrate transport roller that is rotatably supported by the parallel rotating shaft and supports the substrate from a side opposite to the surface to be processed. And a substrate transport unit that transports the substrate,
    A cross-rotating shaft whose axial direction intersects with the surface to be processed, and a substrate pressing roller that is rotatably supported by the cross-rotating shaft and presses the substrate in a state where the substrate can be conveyed from the surface to be processed. And an auxiliary substrate transport unit that is partly arranged in a non-overlapping manner with respect to the substrate and assists in transport of the substrate.
  2. 　前記補助基板搬送部は、前記基板押さえローラにおける前記基板側とは反対側の面が、前記交差回転軸の軸線方向に対して傾く請求項１記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the auxiliary substrate transport unit is configured such that a surface of the substrate pressing roller opposite to the substrate side is inclined with respect to an axial direction of the intersecting rotation axis.
  3. 　前記補助基板搬送部は、前記基板押さえローラが前記交差回転軸側より外周端側ほど厚みが小さくなる請求項２記載の基板処理装置。 3. The substrate processing apparatus according to claim 2, wherein the auxiliary substrate transport unit has a thickness that is smaller toward an outer peripheral end side of the substrate pressing roller than the cross rotation shaft side.
  4. 　前記補助基板搬送部は、前記交差回転軸の軸線方向が前記基板の前記被処理面の法線方向に並行する請求項１から請求項３のいずれか１項に記載の基板処理装置。 4. The substrate processing apparatus according to claim 1, wherein the auxiliary substrate transport unit has an axis direction of the intersecting rotation axis parallel to a normal direction of the surface to be processed of the substrate.
  5. 　前記補助基板搬送部は、前記基板押さえローラが、前記基板の前記被処理面に当接される被処理面当接部と、前記基板における前記被処理面とは反対側の被処理反対面に当接されて前記被処理面当接部との間で前記基板を挟み込む被処理反対面当接部と、を有する請求項１から請求項４のいずれか１項に記載の基板処理装置。 The auxiliary substrate transport unit includes: a substrate pressing roller on a processing surface contact portion that contacts the processing surface of the substrate; and a processing opposite surface of the substrate opposite to the processing surface. 5. The substrate processing apparatus according to claim 1, further comprising: an opposite surface contact portion to be processed that is in contact with and sandwiches the substrate with the surface contact portion to be processed.
  6. 　前記補助基板搬送部は、前記基板押さえローラが前記基板と点接触される請求項１から請求項５のいずれか１項に記載の基板処理装置。 The substrate processing apparatus according to any one of claims 1 to 5, wherein the auxiliary substrate transport unit is configured such that the substrate pressing roller is in point contact with the substrate.
  7. 　前記基板搬送部は、前記並行回転軸が水平方向に対して傾く請求項１から請求項６のいずれか１項に記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the parallel transport axis of the substrate transport unit is inclined with respect to a horizontal direction.
  8. 　前記基板搬送部は、少なくとも前記処理液供給部による前記処理液の供給が行われる間、前記基板搬送ローラを正逆方向に繰り返し回転させて前記基板を往復搬送する請求項１から請求項７のいずれか１項に記載の基板処理装置。 8. The substrate transport unit according to claim 1, wherein the substrate transport unit reciprocally transports the substrate by rotating the substrate transport roller repeatedly in forward and reverse directions at least during the supply of the processing liquid by the processing liquid supply unit. The substrate processing apparatus of any one of Claims.
PCT/JP2018/021994 2017-06-13 2018-06-08 Substrate processing device WO2018230457A1 (en)

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